1321.159 九、發明說明： 【發明所屬之技術領域】 本發明係關於用以製造濺鍍靶材之焊料合金及使用玆 焊=合金之濺鍍靶材。詳細而言，本發明係關於在將靶材 與背板（backing piate)予以接合而製造出濺鍍靶材時所使 用，並且於高溫之下接合強度高，此外，對Cu製或Cu合 .金製背板之侵蝕極小之焊料合金，以及使用該焊料合金二 製造出之濺鍍靶材。 【先前技術】 .以往，關於薄膜形成法之一種為人所知者有濺鍍法。 濺鍍中所採用的靶材，由於在濺鍍時持續受到離子 高能粒子的撞擊，因此熱量累積於内部而形成高溫。因此， 將熱傳導性較佳之材料，—般為由Cu或&合金所構成之 無為背板之冷卻板接合於㈣，並將此背板予以 此使乾材的熱量得以逸散。 曰 乾材與背板的接合，雖有利用接合材來進行 ^ 由擴散接合來進行，但—般較常採用前者之使用接 進行之方法。 丧。材來 關於接合材，以往係廣泛採用低熔點之In 為主成分之1n合金（參照專利文獻1)。 疋η #然而，於由In或是Ιη合金所組成的接合材中， :近年來伴隨著平面顯示器#界之素玻璃的大型化 無法對應於乾材之大面積化以及厚型化之問題。具 5 ’由於起因於把材的大面積化所導致之乾材本身的 317999 5 叫 1.159 =材從背板剝離之問題，此外，由於濺鍍時 ，又入電力密度增加所導致之靶材溫度上升、以及 尽型化所導致之雜時料卻效#惡化等而在接合材声 =為高溫時，會因接合材的接合強度不足，而產生靶材‘ 背板剝離之問題。此外，從In的價格高漲之點來看，也： 成本上較為不利之問題。 針對上述問題’一般係採用以純Sn為接合材來進行 鲁h之方法。然而’純Sn會與做為背板材之Cu或a合 金產生反應’而侵蝕背板。 σ .-般而言，背板係將所接合之使用完畢的靶材剝離， .絲新的ΙΜ才加以接合而重複使用1而，若於每次接合 時使背板受到侵餘的話，則背板的厚度將逐漸變薄，使得 其本身的強度減弱。結果會產生因強度降低所導致之龜 曲，最後會產生所接合的靶材發生翹曲以及龜裂之問題。 此外，由於常會在背板的内部設置冷卻水路，因此亦可能 φ產生因強度降低以及魏曲所導致之漏水。 針對上述之背板的侵蝕問題，為人所知者有對背板進 打鍍鎳之方法。然而，於此方法也有所鍍敷的鎳（Ni)被侵 蝕而於重複使用背板時需定期進行鍍鎳，就生產效率以 及成本面來看’並非為理想的解決方法。 此外，於專利文獻2 _係記載一種採用由In(3〇至6〇 重量％)-Sn(30至60重量％)·Ζη(〇 〗至1〇重量％)所組成之 焊料合金來進行接合而形成之濺鍍靶材。然而，如上述若 匕έ 27重里％以上的jn，則會產生金屬間化合物之石 317999 6 1321.159 -IhSn而導致低熔點化，因 足，而無法解決乾材與背板導時之接合強度不 於專利文獻3中係記載一/之問喊。 設置雙層接合材層之趨鍍靶材種，及鉻銅製背板之間 觸之第i接合材層的接合:材;4=中’關於與議 n/、7 /1Λ tT'δ己载有Sn(90至70重量 %)-Ζη(1〇至30重量％)合 王/υ更里 之接人鉍^ ^ τ 與月板接觸之第2接合材層 之接合材’係s己載有Ιη_Α ς ,^ ^ 合金。然而，由於第1接合 材含有較多的Zn，因此容易生 使口 令约生成乳化物，而有接合強度降 ^之問喊’此外’由於第2接合材包含删ppm以上的 ^因此對環境㈣響較大，亦違反WHS法令等的法律 限制’因此實際上並無法使用。 於專利文獻4中係記載一種以提供不易產生剝離的賤 練材為目的，而㈣Sn_Pb_Ag^合金，將A1系乾材 及A1系背板予以接合所形成之濺鍍靶材。然而，由於該焊 ，合金包含lOOOppm以上的Pb，因此與上述相同理由而 實際上並無法使用。 於專利文獻5中係記載一種由ai(〇.〇i至3.0重量 巧）·Ιη(〇，1 至 50 重量 XVAgWj 至 6〇 重量 ％)_Cu(〇 至 6 〇 重里％)-Ζη(0至10.0重量％)-Sn(剩餘部分）所組成之無鉛 焊料。關於如此之印刷基板用途等之使用於電子零件的無 斜焊料，一般係採用多元系（3元系、4元系、或是5元系 以上）合金’然而由於需調合多種元素，因此使設備費用等 成本增加。例如’於專利文獻5中，為了不使熔點為962 C的Ag產生偏析而炫解，必須具備高溫爐等設備以及 7 317999 1321159 而二枓費用。此外，於採用此等烊料合金來做為用以將大 =⑽如為心》h5m以上）的㈣予以接合之接合材 ^況下’係有谷易產生於接合面内之輝料的組成偏析、 ，不均句之問題。此外’因焊料合金之Ag Μη的含有 :=不同& Ag與背板中所含有之&產生反應生成金 -屬間化合物而使接合強度下降，或化與“產生反應，生1321.159 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a solder alloy for producing a sputtering target and a sputtering target using a solder = alloy. In particular, the present invention relates to the use of a target to bond a backing piate to produce a sputtering target, and has high bonding strength at high temperatures, and is also made of Cu or Cu. A solder alloy with minimal corrosion of the gold backing plate, and a sputtering target made using the solder alloy 2. [Prior Art] Conventionally, a sputtering method has been known as one of film forming methods. Since the target used in the sputtering is continuously hit by the ion high-energy particles during sputtering, heat is accumulated inside to form a high temperature. Therefore, a material having a good thermal conductivity, generally a non-backing plate composed of Cu or & alloy, is bonded to (4), and the back plate is used to dissipate the heat of the dry material.接合 The joining of the dry material and the backing plate is carried out by diffusion bonding using a bonding material, but the method of using the former is generally used. funeral. In the past, a 1n alloy having a low melting point of In as a main component was widely used (see Patent Document 1).疋 # 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 然而 In In In In In In In In In In In In In In In In In In In In Having a 5' due to the large area of the material, the dry material itself is 317999 5 called 1.159 = the material is peeled off from the back sheet, and in addition, the target temperature due to the increase in power density due to sputtering When the bonding material sounds to a high temperature due to the rise and the deterioration of the miscellaneous materials, the bonding strength of the bonding material is insufficient, and the problem of the target's back sheet peeling occurs. In addition, from the point of the price increase of In, it is also: the problem of relatively unfavorable cost. In view of the above problem, a method of performing pure h as a bonding material is generally employed. However, 'pure Sn will react with Cu or a alloy as a backing plate' to erode the backsheet. σ. In general, the backing plate peels off the joined target, and the new one is joined and reused. If the backing is invaded each time it is joined, then The thickness of the backsheet will gradually become thinner, making its own strength weaker. As a result, there is a tortuosity caused by a decrease in strength, and finally, there is a problem that warpage and cracking of the joined target occur. In addition, since a cooling water path is often provided inside the backing plate, it is also possible that φ causes water leakage due to strength reduction and Weiqu. In view of the above-mentioned problem of erosion of the back sheet, it is known that there is a method of plating nickel on the back sheet. However, in this method, nickel (Ni) which is plated is eroded and nickel plating is periodically performed when the back sheet is repeatedly used, which is not an ideal solution in terms of production efficiency and cost. Further, Patent Document 2 discloses that a solder alloy composed of In (3 〇 to 6 〇 wt%)-Sn (30 to 60% by weight) Ζη (〇 to 1 重量%) is used for bonding. The resulting sputter target. However, if jn is more than 27% by weight, the intermetallic compound stone 317999 6 1321.159 -IhSn is generated to cause a low melting point, and the joint strength of the dry material and the back sheet cannot be solved. In Patent Document 3, a question is called. The plating target species of the double-layer bonding material layer and the bonding of the ith bonding material layer between the chrome-copper backing plates are provided: 4=中中·与议, n/, 7 /1Λ tT'δ There are Sn (90 to 70% by weight) - Ζ η (1 〇 to 30% by weight) 王 王 / υ 里 之 ^ ^ ^ τ The contact material of the second bonding material layer in contact with the moon plate There are Ιη_Α ς , ^ ^ alloy. However, since the first bonding material contains a large amount of Zn, it is easy to generate an emulsified product, and the bonding strength is lowered, and the second bonding material contains a ppm or more, so the environment (4) It is louder and violates the legal restrictions such as the WHS Act, so it is actually not available. Patent Document 4 describes a sputtering target formed by bonding an A1-based dry material and an A1-based back sheet for the purpose of providing a ruthenium material which is less likely to cause peeling, and (4) a Sn_Pb_Ag alloy. However, since the alloy contains Pb of 1000 ppm or more due to the welding, it is practically unusable for the same reason as described above. Patent Document 5 describes a kind from ai (〇.〇i to 3.0 weights)·Ιη (〇, 1 to 50 weight XVAgWj to 6〇% by weight)_Cu (〇 to 6 〇重里%)-Ζη (0 to 10.0% by weight) -Sn (the remainder) consists of a lead-free solder. For the non-tilt solder used for electronic components such as the use of such a printed circuit board, a multi-component (3-ary system, 4-member system, or 5-member system or higher) alloy is generally used. However, since a plurality of elements are required to be blended, the device is used. Costs and other costs increase. For example, in Patent Document 5, in order to cause segregation of Ag without melting point 962 C, it is necessary to provide equipment such as a high-temperature furnace and 7 317999 1321159. In addition, the use of such a tantalum alloy as a joint material for joining (4) which is larger than (10) as the heart "h5m or more" is a composition of the glow which is produced in the joint surface by the valley. Segregation, the problem of uneven sentences. In addition, the content of Ag Μη in the solder alloy: = different & Ag reacts with the & contained in the back sheet to form a gold-intermetallic compound to reduce the bonding strength, or to react with
.^金屬間化合物（例如^_In3Sn)而導致低熔點化，使高溫 t之接。強度不足’而無法解決t材與背板的剝離之問題。 •於專利文獻6中係記载關於印刷基板用途等之使用於 電子零件的無料料，為人所知者有自sn_zn(9重量％) 2金，此外，亦提出有由Zn(3至5重量％)也⑽至23重 量％)41^(剩餘部分）所組成之焊料合金。然而這些焊料為印 刷基板料等之使用於電子科的無料料，關於製造錢 鐘乾材時所使用之接合材並無任何記載。此外，若添加後 者的量之Bi’由於焊料的炫點顯著降低，使得高溫時的接 合強度不足，因而無法解決靶材與背板的剝離之問題。 於專利文獻7中係記载一種由§η(85至％重量 %)-Ag(l至6重量％Hn(4至10重量％)所組成之無錯^ 料合金，此外，於專利文獻8中係記載一種由§11(92至97 重量％)-Ag(3 S 6重量至2 〇重量％)所組成之 無鉛焊料合金。然而，於這些不含Zn之組成中，並無法 解決Cu製或Cu合金製背板之侵蝕問題。此外，於上^組 成中，由於包含2000PPm以上的Ag，因此使八§與背板中 所含有之Cu產生反應，生成金屬間化合物，而導致接合 317999 8 1321159 強度降低之問題。 於專利文獻9中係記载為人所 幻-Zn(8.8重量％)之無料料 有（.重里 電子裝置之焊接時所採；’:係=學裝置及微 時所使用之接合材，並無任何、=科，闕於製造錢齡材 - 於專利文獻】0中係記载於製± 彳而二Γ 材接合於由CU等所製成之背板。 : '㈣焊料的具體組成，並無任何記載。 "於㈣與接合材之間 下-，採取藉由減鍍或是#㈣差之^兄 襯臈之Cu膜或N…it於t 面形成稱為背 而^ 〇孟艇，以確保潤溼性之方法，然 本上升之中’除了因必須具備成膜裝置而導致成 =之外，亦由於製程增加而導致生產性降低之問題。 [專利文獻1]曰本特開平7_48667號公報 [專利文獻2]曰本特開平7_22769〇號公報 [專利文獻3]曰本特開平8 2697〇4號公報 [專利文獻4]曰本特開平1(μ46327號公報 [專利文獻5]曰本特開2〇〇〇_141〇78號公報 [專利文獻6]曰本特開平8_164495號公報 [專利文獻7]曰本特開平8_187591號公報 [專利文獻8]曰本特開平9_326554號公報 [專利文獻9]曰本特開平8118〇67號公報 [專利文獻1〇]曰本特開2〇〇1_34〇959號公報 【發明内容】 317999 9 (發明所欲解決之課題） 八u本發明之課題在於提供一種於將靶材與Cu製或Cu合 製月板予以接合而製造出濺鍍乾材時所使用，即使於產 酿下接合強度亦很高，此外因接合所造成之對背板之侵蝕 亦極小之焊料合金、以及使賴焊料合金所製造出之賴 此外，本發明之課題亦在於提供一種達到不需且有背 :膜程度之具有與靶材之優良的潤漫性之焊料合金、以及 吏用S亥焊料合金所製造出之濺鍍靶材。 (解決課題之手段） 本發明人等係鑑於上述情形經過精心探討之後發現， sn為主成㈣包含較量的ZR2元系輝料合 為用於絲材與Cu製或Cu合金製背板加以接合之 ==使用時，即使在嚴酷的_條件下使接合材層的 =情況下，亦可維持很高的接合強度，防止輕材 ==此外根據該焊料合金，除了可顯著降低背板 …之外’並可提升與乾材之潤㈣，因而完成本發 亦即，本發明係關於下列事項。 ❻ΪΓ為-種焊料合金，係、於製造賴㈣時，使用 含上重C:或的Γ金製背板的接合，其崎 雜質所组:“的"’以及剩餘部分為-與不可避免的 於本發明中，上述革巴材較理想為由金屬或是合金所組 317999 10 成’更理想為由AI或A1合金所組成。 焊料:發明為一種濺鍍靶材，其特徵為：採用上述 :^金，並將乾材與CU製或Cu合金製背板予以接合而 (發明之效果） •，據本發明之㈣合金，由於可職即使於高溫時亦 合強度之接合材層，因此，即使在嚴酷的錢 ’又“下’亦可防止t材從背板剝離，此外可顯著降低接 合時之背板的Cu侵钱量，@ μ ' 成之強度㈣化。 时喊㈣背板所造 •此外，本發明之焊料合金，由於可達到不需具有背觀 膜程度之具有與乾材之優良的潤渔性，因此可省略製作背 襯膜時所需之裝置及製程’而大幅提升濺鍍靶材的生產性。 此外，根據本發明之濺鍍靶材，可依照素玻璃大型化 之要求’而穩定地形成大面積之薄膜。 • 【實施方式】 以下具體說明本發明。 <濺鍍靶材製造用焊料合金> 本發明之焊料合金係於製造濺鍍乾材時，使用於乾材 與Cu製或Cu合金製背板的接合之接合材，其特徵為：由 包s 3至9重里％的Zn、以及剩餘部分為Sn與不可避免 的雜質所組成。在此’所謂不可避免的雜質係指合金中所 不可避免會包含之極為微量的Zn以及Sn以外之其他元 素。換言之，本發明之焊料合金實質上係由及Zn所組 317999 1321159 成。 _由於該谭料合金係包含以sn為主成分，因此，即使 於南溫下亦可維持报高的接合強度。具 焊料合金將靶材盥Cu制—、r人入 於杯用該 人：： 或合金製背板予以接合時之 .達3鄭W以上。又二上’較理想為可 '此潰况下’接合強度的上限傕计， ^ = 1由於該焊料合金即使於高溫下亦具備很高的 ί.Ϊ :!ί夕此’於採用該焊料合金將乾材與CU製或Cu 二Μ衣月予以接合後’即使在嚴酷的崎條件下使接合 材層的溫度上料’亦可防止㈣從背板剝離。 此夕卜由於5亥焊料合金係含有上述特定範圍内的量之 Ζ:，因此可抑制焊料合金中的如與構成背板之主要元素 6、^產生反應’除了可顯著降低接合時之背板的侵钱量 之外’亦可將焊料合金的炫點調節在適當範圍内，並且可 提升與靶材之潤溼性。 若該焊料合金的Zn含有量未達上述下限值，則於接 5時之背板的侵餘量會增加，則與乾材，尤其是盘w 製乾材之潤澄性有降低的傾向。另一方面，若Zn含有量 超過上述上限值’則容易生成氧化物，接合強度有降低的 傾向。 關於可適用本發明的焊料合金來做為接合材之背板的 材質’就具有與該焊料合金之優良的潤祕，且接合強度 尤其提高之點來看，較理想為Cu及Cu合金更理想為 Cii。關於Cu合金’例如有鉻銅等之以Cu為主成分之合“金。 317999 12 1321159 根據本發明之焊料合金，在以焊料合金將上述Cu製或Cu 合金製背板與靶材予以接合時，由於可顯著降低背板的Cu 侵蝕量，因此可防止因重複使用該背板所造成之強度的劣 化。 上述焊料合金的熔點，較理想為198至220°C(其中， .Sn-Zn合金的共晶點為198°C)。若焊料合金的熔點超過220 、°C，則會促進焊料合金及背板的氧化，可能導致接合強度 的降低，此外，由於高溫而無法確保操作性，導致生產性 及良率降低。 關於可適用本發明的焊料合金來做為接合材之靶材的 材質，並無特別限定，具體而言，可列舉Ab Ti、Mo、Ta、 ' Nb、Cu、Cr、Ag中之任一種金屬或是Si，或是含有以這 些元素的至少1種為主成分之合金。 關於上述合金，例如有Al-Ni合金、Al-Nd合金、Al-Cu 合金、Al-Ti合金等A1合金、Ti-W合金等Ti合金、Mo-W 鲁合金等Mo合金、Ag-Pd合金、Ag-Au合金等Ag合金、Cu-Ni 合金等Cu合金、Ci-Ni合金等Cr合金等。這些合金組成， 可依循由濺鍍所欲獲得之薄膜組成來適當的決定，並無特 別限制。 在這當中，就於進行濺鍍而投入極大電力時會使溫度 容易上升，且更為有效發揮本發明的效果來看，較理想可 列舉為A1靶材或A1合金靶材。一般而言，於A1靶材或 A1合金製靶材的接合採用In或Sn來做為接合材的情況 下，由於與靶材之潤溼性差，因此採用藉由濺鍍或是蒸鍍， 317999 :乾材的接合面形成稱為背襯… 膜，以確保潤澄性之方法。然而，如此 u = :=置而導致成本上升之外，亦由於製 致生產性降低，因此並非為較理想之方法。 導 穿丄本發明之焊料合金即使於將A1或AI合金 2材予以接合的情況下’潤渥性亦很好，因此不 /成上述背襯膜，而有助於成本降低以及生產性提升。 成分之桿料合金係以可在上述的量之下含有上述各 授拌H —般所知的方法，壯進行計量、添加、 並無特::定加熱、炫融、冷卻等而得，因此該製造方法 <濺鍍靶材> 一般的方法，利用由本發 ，將上述靶材與背板予以 本發明之濺鍍靶材係可藉由 明的焊料合金所形成的接合材層 接合而製造出。 上述靶材與背板的形狀，只要這些的接合面實質 平仃即可’其本身的形狀並無特別限定。A 了更進一步接 :與焊料合金之潤祕，亦可因應需要，藉由—般所二的 法，於上述乾材的接合面施加粗面化處理。 具體而言’例如以銑床、車床、平面磨床等，對上述 靶材的接合面進行加工’並因應必要而施加粗面化處理之 後，採用有機溶劑等予以洗淨並藉此進行脫脂，並且於將 該乾材加熱至焊料合金的炫點以上之狀態下，藉由浸潰法 將焊料合金㈣絲㈣接合面，㈣錢合材層，並且 317999 丄j厶丄丄jy 同樣對背板進行脫脂，並加熱至焊料合金的熔點以上，然 後將這些接合面彼此，以隔介接合材層的狀態下予以貼 合，並進行適當加壓即可。加麼時的磨力並無特別限定， 對於乾材面積’一般為施加〇 〇〇〇1至〇 〗MPa。 此外，於必要的情況下，係同樣地於靶材的接合面形 -成接合材層’並且亦於同樣進行脫脂及加熱後之背板的接 ，合面塗佈焊料合金，於形成接合材層之後，於加熱至焊料 籲合金的熔點以上之狀態下，將這些接合面彼此，以隔介接 合材層的狀態予以貼合’並進行加壓即可。 -如此所得之濺鍍靶材的接合材層，若考量到焊料合金 的電阻，則一般為具有2mm以下的厚度，較理想為具有 0.1至1mm的厚度。此外，亦可在將所得之濺鍍靶材冷卻 至室溫之後，進行橋正精加工。 以下根據實施例而更具體的說明本發明，但是本發明 並不限定於該等實施例。 鲁[實施例] (實施例1與2、比較例1至6) 以Sn(純度99.99%)、Zn(純度99.99%)為原料，將該 等調製出包含Sn/Zn(重量％ )=97/3、及91/9的比例之Sn-Zn 焊料合金（依順序而稱為樣本No.l、2)。 此外’為了比較對照，以相同原料而調製出包含 Sn/Zn(重置％)：=1〇〇/〇、99/1、9〇/1〇、及 85/15 的比例之 Sn_Zn 焊料合金（稱為樣本N〇.3至6)。 此外’為了比較對照，以ln(純度99.99%)、Sn(純度 15 317999 丄 % )為原料，而將該等調製出包含In/Sn(重量 O-100/0、及15/85的比例之焊料合金（依順序而稱為樣本 N〇.7、8) 〇 採用所得之樣本No.l至8，以下列方法評估（1)熔點， (2) 接合強度的溫度依存性，（3)背板（Cu)的侵蝕量，（4)與 -A1製乾材之潤澄性。 評估結果如第1表所示。 鲁⑴溶點的測定方法 以示差熱分析裝置TG-DTA2000S(MAC Science公司 製）’於升溫速度為20°C/小時下，分別將上述樣本No.l 至8加熱至3〇〇〇c為止，測定此時的吸熱反應峰值，以該 峰值溫度為熔點。 • (2)接合強度的測定方法（接合強度的溫度依存性評估方法） 各自使用上述樣本No.l至8，將不具有背襯膜之(/> 10mmx50mm 的圓柱狀 A1 乾材與 20mmx20mmx5mmt 的 Cu •製背板予以接合，採用拉伸試驗裝置AUTOGRAPH AGS-500B(島津製作所（曰本）製造），測定出室溫（23°C )下 的接合強度。此外，一邊以熱電偶對接合部附近進行溫度 的測量，一邊以Heating Gun(白光社（日本）製造）進行加 熱，並同樣各自對溫度上升時（60°C、90°C、120°C、150 °C)的接合強度進行測定。 (3) 背板（Cu)侵蝕量的測定方法 採用超音波焊料塗層機，於加熱板上加熱至2 6 0 °C之 Cu製背板50mmx50mm□内，各自進行上述樣本No.l至8 317999 1321159 之塗底層。塗底層之後，以矽橡膠的刷子將背板上的焊料 合金削下，採用 ICP(Inductively Coupled Plasma:電漿發 光分光分析裝置）（SPS5100 ; SII Nano Technology Inc.製）， 對削下後的焊料合金進行分析，而測定出Cu量。 (4)與A1靶材之潤溼性的評估方法. ^ Intermetallic compounds (such as ^_In3Sn) lead to low melting point, so that the high temperature t. The strength is insufficient, and the problem of peeling off the t-material and the back sheet cannot be solved. In Patent Document 6, there is described a non-material for use in an electronic component, such as a printed circuit board application, and it is known that it is derived from sn_zn (9 wt%) 2 gold, and is also proposed to be composed of Zn (3 to 5). The weight %) is also a solder alloy composed of (10) to 23% by weight) 41 (the remainder). However, these solders are non-materials for use in electronic materials such as printed substrate materials, and there is no description about the bonding materials used in the manufacture of dried materials for money. Further, if the amount of the added Bi' is significantly lowered by the solder, the bonding strength at a high temperature is insufficient, so that the problem of peeling of the target and the back sheet cannot be solved. Patent Document 7 describes an error-free alloy composed of § η (85 to % by weight)-Ag (1 to 6% by weight of Hn (4 to 10% by weight), and further, Patent Document 8 The middle system describes a lead-free solder alloy consisting of §11 (92 to 97% by weight)-Ag (3 S 6 wt% to 2 wt%). However, in these Zn-free compositions, it cannot be solved by Cu. Or the corrosion problem of the backing plate made of Cu alloy. In addition, in the upper composition, since Ag of 2000 ppm or more is contained, the § § is reacted with Cu contained in the back sheet to form an intermetallic compound, resulting in bonding 317999 8 1321159 The problem of the strength reduction. In Patent Document 9, it is described as a non-material of illusion-Zn (8.8% by weight). (When the welding of the electronic device is taken; ': system = learning device and micro time There is no such thing as the joint material used, and it is used in the manufacture of money-aged materials - in the patent literature, 0 is described in the production of ± 彳 and the second material is joined to the back sheet made of CU, etc. : ' (4) The specific composition of the solder, there is no record. " between (4) and the joint material - take the reduction by plating or #(四) ^ Brother's lining of the Cu film or N...it forms a method called the back and ^ 〇 艇 boat to ensure the wettability, but this rises in addition to the necessity of having a film forming device. In addition, the problem of the decrease in the productivity is also caused by the increase in the number of the processes. [Patent Document 1] Japanese Patent Laid-Open No. Hei 7-48667 (Patent Document 2) Japanese Patent Application Laid-Open No. Hei 7-22769 No. [Patent Document 3] 曰本特开平8 2697 〇 特 特 专利 专利 专利 ( ( ( ( ( ( ( ( ( ( ( ( ( 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 Japanese Patent Laid-Open Publication No. Hei 9-326554 (Patent Document No. 9) pp. 1_34〇959号 [Summary of the Invention] 317999 9 (Problems to be Solved by the Invention) The object of the present invention is to provide a sputter dry material by bonding a target to a moon plate made of Cu or Cu. Used at the time, even if the joint strength is high under the production, and the pair is caused by the joint In addition, the solder alloy of the board is also extremely small, and the solder alloy is manufactured. In addition, the object of the present invention is to provide an excellent diffuse property to the target which is not required and has a back: film degree. The solder alloy and the sputtering target produced by the S-sea solder alloy. (The means to solve the problem) The present inventors have carefully studied the above situation, and found that sn is the main component (4) contains the ZR2 elementary system. Gluing is used for joining the wire with a Cu or Cu alloy backing plate == When used, even when the bonding material layer is under severe conditions, the bonding strength can be maintained at a high level. Prevention of Lightweight == Further, according to the solder alloy, in addition to the fact that the backsheet can be significantly lowered, and the dryness of the dry material can be improved (4), the present invention is completed, that is, the present invention relates to the following matters. ❻ΪΓ is a kind of solder alloy, which is used in the manufacture of Lai (4), using a backing plate made of a heavy-weight C: or sheet metal, and its composition: "The "' and the rest are - and inevitable In the present invention, the above-mentioned leather material is preferably composed of a metal or alloy group of 317,999 10 'more desirably composed of AI or Al alloy. Solder: Invented as a sputtering target, characterized by: The above-mentioned:: gold, and the dry material is joined to the CU or Cu alloy backing plate (the effect of the invention). According to the (4) alloy of the present invention, since the joint layer of the strength can be combined even at a high temperature, Therefore, even under the harsh money 'and 'under' can prevent the t material from being peeled off from the back sheet, in addition, the amount of Cu invading the back sheet at the time of joining can be significantly reduced, and the strength of @μ ' is (4). In the case of the solder alloy of the present invention, since it is possible to achieve excellent wettability with dry materials without the need for a back film, the device required for the production of the backing film can be omitted. And the process 'to greatly improve the productivity of the sputtering target. Further, according to the sputtering target of the present invention, a large-area film can be stably formed in accordance with the demand for enlargement of plain glass. [Embodiment] Hereinafter, the present invention will be specifically described. <Solder alloy for sputtering target production> The solder alloy of the present invention is used for bonding a dry material to a backing plate made of Cu or a Cu alloy when a sputter dry material is produced, and is characterized by: The package s 3 to 9 % by weight of Zn, and the remainder is composed of Sn and unavoidable impurities. Here, the term "unavoidable impurities" means extremely small amounts of Zn and other elements which are inevitably contained in the alloy. In other words, the solder alloy of the present invention is substantially composed of Zn 317999 1321159. _ Since the tan alloy is mainly composed of sn, the joint strength can be maintained even at a south temperature. With a solder alloy, the target is made of —Cu, and r is used in the cup. The person: or the alloy backing plate is joined. It is up to 3 Zheng W or more. On the other hand, the 'higher than the ideal' is the upper limit of the joint strength, ^ = 1 because the solder alloy has a high temperature even at high temperatures. After the alloy is joined with CU or Cu, the temperature of the bonding layer can be prevented from being peeled off from the backing plate even if the temperature of the bonding layer is applied under severe conditions. Further, since the 5H solder alloy system contains the amount within the above-mentioned specific range: it is possible to suppress the reaction in the solder alloy such as the main elements constituting the back sheet, except for the back sheet which can significantly reduce the bonding. In addition to the amount of money invading, the bright point of the solder alloy can also be adjusted within an appropriate range, and the wettability with the target can be improved. When the Zn content of the solder alloy does not reach the above lower limit value, the amount of the backing plate at the time of joining 5 increases, and the dryness of the dry material, particularly the dry material of the disk w, tends to decrease. . On the other hand, when the Zn content exceeds the above upper limit, an oxide tends to be formed and the joint strength tends to decrease. The material of the backing plate to which the solder alloy of the present invention can be applied is excellent in that it is excellent in adhesion to the solder alloy, and the joint strength is particularly improved, and it is more desirable to be Cu and Cu alloy. For Cii. For the Cu alloy, for example, there is a combination of Cu, such as chrome copper, which is mainly composed of Cu. 317999 12 1321159 According to the solder alloy of the present invention, when the back sheet made of Cu or Cu alloy is bonded to the target by a solder alloy Since the amount of Cu attack on the back sheet can be remarkably reduced, the deterioration of strength due to repeated use of the back sheet can be prevented. The melting point of the above solder alloy is preferably 198 to 220 ° C (wherein, Sn-Zn alloy) The eutectic point is 198 ° C. If the melting point of the solder alloy exceeds 220 ° C, the oxidation of the solder alloy and the back sheet is promoted, which may result in a decrease in joint strength and, in addition, high operability cannot be ensured. The material and the yield of the solder alloy to which the present invention is applied are not particularly limited, and specific examples thereof include Ab Ti, Mo, Ta, 'Nb, Cu, and Cr. Any one of Ag or Si, or an alloy containing at least one of these elements as a main component. For the above alloys, for example, an Al-Ni alloy, an Al-Nd alloy, an Al-Cu alloy, and an Al- A alloy such as Ti alloy, Ti-W alloy, etc. T Mo alloy such as Mo alloy, Mo-W Lu alloy, Ag-Pd alloy, Ag-Au alloy, Cu alloy such as Cu-Ni alloy, Cr alloy such as Ci-Ni alloy, etc. These alloy compositions can be etched by There is no particular limitation on the appropriate determination of the composition of the film to be obtained by plating. In this case, when the maximum power is applied to the sputtering, the temperature is easily increased, and the effect of the present invention is more effectively exerted. Preferably, it is an A1 target or an A1 alloy target. In general, when In or Sn is used as a bonding material in the bonding of the A1 target or the A1 alloy target, the wettability with the target is poor. Therefore, by sputtering or vapor deposition, 317999: the joint surface of the dry material forms a method called a backing film to ensure the smoothness. However, if u = := causes the cost to rise, It is also not a preferred method because of the reduced productivity. Therefore, the solder alloy of the present invention is excellent in the wettability even when the A1 or AI alloy 2 is joined. The above-mentioned backing film contributes to cost reduction and productivity improvement The rod alloy of the component is obtained by measuring the method of adding the above-mentioned various kinds of H to the above-mentioned amount, and is metered, added, and not specifically: heating, glazing, cooling, and the like. Therefore, the manufacturing method <sputtering target> is generally a method in which the target material and the backing plate are bonded to the bonding target of the present invention by a bonding material layer formed of a bright solder alloy. The shape of the target and the backing plate is not particularly limited as long as the joint surfaces are substantially flat. A is further connected to the solder alloy, and may be used as needed. The roughening treatment is applied to the joint surface of the above-mentioned dry material by the method of the general method. Specifically, for example, a joint surface of the target material is processed by a milling machine, a lathe, a surface grinder, or the like, and a roughening treatment is applied as necessary, and then washed with an organic solvent or the like to perform degreasing, and The dry material is heated to a state above the bright point of the solder alloy, and the solder alloy (four) wire (four) joint surface, (four) money layer layer, and 317999 丄j厶丄丄jy are also degreased by the dipping method. Then, it is heated to a temperature equal to or higher than the melting point of the solder alloy, and then these joint surfaces are bonded to each other in a state of interposing the joint material layer, and appropriate pressurization is performed. The grinding force at the time of adding is not particularly limited, and the area of the dry material is generally applied as 〇1 to 〗 MPa. In addition, if necessary, the bonding surface of the target is formed into a bonding material layer, and the backing plate is also subjected to degreasing and heating, and the solder alloy is applied to the bonding surface to form a bonding material. After the layer is heated to a temperature equal to or higher than the melting point of the solder alloy, the joint surfaces may be bonded to each other in a state of interposing the joint material layer and pressurized. The bonding material layer of the sputtering target thus obtained has a thickness of 2 mm or less, and preferably 0.1 to 1 mm, in consideration of the electric resistance of the solder alloy. Further, it is also possible to carry out the bridge finishing after cooling the obtained sputtering target to room temperature. The present invention will be more specifically described below based on examples, but the present invention is not limited to the examples. [Examples] (Examples 1 and 2, Comparative Examples 1 to 6) Sn (Zn 99.99%) and Zn (purity: 99.99%) were used as raw materials, and Sn/Zn (% by weight) = 97 was prepared. Sn/Zn solder alloys of ratios /3 and 91/9 (referred to as sample Nos. 1 and 2 in order). In addition, for comparison of the control, a Sn_Zn solder alloy containing Sn/Zn (replacement %): ratio of 1〇〇/〇, 99/1, 9〇/1〇, and 85/15 was prepared with the same raw materials ( Called sample N〇.3 to 6). In addition, 'for comparison, ln (purity: 99.99%) and Sn (purity: 15 317999 丄%) were used as raw materials, and these were prepared to contain In/Sn (weight ratios of O-100/0, and 15/85). Solder alloys (referred to as samples N〇.7, 8 in order) 〇 Using the obtained samples No. 1 to 8, the following methods were used to evaluate (1) melting point, (2) temperature dependence of joint strength, and (3) back The amount of corrosion of the plate (Cu), (4) and the dryness of the dry material made of -A1. The evaluation results are shown in Table 1. Lu (1) Determination of melting point by differential thermal analysis device TG-DTA2000S (MAC Science The sample Nos. 1 to 8 were heated to 3 〇〇〇c at a temperature increase rate of 20 ° C / hr, and the endothermic reaction peak at this time was measured, and the peak temperature was used as the melting point. (Measurement method of joint strength (temperature dependence evaluation method of joint strength) Each of the above samples No. 1 to 8 was used, and a cylindrical A1 dry material having no backing film (/> 10 mm x 50 mm and Cu of 20 mm x 20 mm x 5 mmt) was used. The backing plate was joined and measured by a tensile tester AUTOGRAPH AGS-500B (manufactured by Shimadzu Corporation (曰本)) The bonding strength at room temperature (23° C.), while heating the vicinity of the joint portion by a thermocouple, heating with a Heating Gun (manufactured by Hakusho Co., Ltd.), and similarly increasing the temperature ( The joint strength at 60 ° C, 90 ° C, 120 ° C, and 150 ° C was measured. (3) The method of measuring the amount of erosion of the back sheet (Cu) was carried out by heating on a hot plate using an ultrasonic solder coater. Each of the samples No. 1 to 8 317999 1321159 of the above-mentioned sample No. 1 to 8 317999 1321159 was subjected to a coating of 50 mm x 50 mm □ of a 60 ° C back plate. After the underlayer was applied, the solder alloy on the back plate was cut with a enamel rubber brush, using ICP ( Inductively Coupled Plasma (SPS5100; manufactured by SII Nano Technology Inc.), the amount of Cu was measured by analyzing the ground solder alloy. (4) Wettability with A1 target evaluation method
採用超音波焊料塗層機，於加熱板上加熱至260°C之 A1製乾材50mmx50mm□内，各自進行上述樣本No.l至8 之塗底層10秒鐘。接下來，將A1製靶材暫時冷卻至室溫 之後再加熱至260°C，之後以矽橡膠的刷子將該A1製靶材 上的焊料合金削下。之後，以目視觀察焊料合金是否未剝 離地全面均勻殘留於A1製靶材上，以潤溼性佳、且焊料合 金於全面均勻殘留而未產生剝離者為AA，以潤溼性不佳、 且焊料合金產生剝離者為BB，而進行評估。 【第1表】Using an ultrasonic solder coater, the substrate was heated to 260 ° C in a dry material of 50 mm x 50 mm □ on a hot plate, and the undercoat layers of the above samples No. 1 to 8 were each subjected to a primer for 10 seconds. Next, the A1 target was temporarily cooled to room temperature, and then heated to 260 ° C, after which the solder alloy on the A1 target was cut with a rubber brush. After that, it was visually observed whether the solder alloy remained uniformly on the target made of A1 without being peeled off, and the wettability was good, and the solder alloy remained uniformly in the entirety without being peeled off, and the wettability was poor, and The solder alloy was peeled off to BB and evaluated. [Table 1]
樣本 No. 組成 (wt%) 熔點 (°C) 接合強度(kg^mm2) Cu侵钱 量(wt%) 與A1之 潤濕性 23〇C 60°C 90°C 120°C 150°C 1 實施例 1 Sn-3Zn 215 6.3 5.5 4.9 . 4.7 3.8 0.21 AA 2 實施例 2 Sn-9Zn 199 5.8 5.2 4.8 4.5 3.8 0.05 AA 3 比較例 1 lOOSn 231 7.2 5.8 4.8 4.4 3.8 1.8 AA 4 比較例 2 Sn-lZh 225 6.9 5.8 4.7 4.4 3.5 1.2 AA 5 比較例 3 Sn-lOZn 216 4.0 3.7 3.0 2.6 2.2 0.16 AA 6 比較例 4 Sn-15Zn 251 3.8 3.5 2.9 2.6 2.1 0.05 AA 7 比較例 5 1001η 157 1.8 1.3 0.9 0.6 0.1 2.9 BB 8 比較例 6 In-85Sn 183 42 2.2 1.9 1.7 1.4 1.6 BB 17 317999 1321159 ' 從第1表可知，實施例1及2(樣本No. 1、2)，係與比 較例2至6(樣本No.3至8)不同，高溫時的接合強度高， 且可顯著降低背板所致之Cu侵蝕量，此外，與A1製靶材 之潤渔性亦優良。 此外，可知實施例1及2(樣本No. 1、2)之熔點，除了 _可提升濺鍍靶材製造作業的效率之外，並位於理想的範圍 .内。 (實施例3至17) ^ 採用上述實施例2的樣本No.2(Sn/Zn(重量％)=91/9) 的焊料合金，將不具有背襯膜之W 10mmx5Omm之圓柱狀 的各種把材（A1合金、Ti、Ti合金、Mo、Mo合金、Ta、 Si、Nb、Cu、Cr、Ag、Ag 合金）與 20mmx20mmx5mmt 的 • Cu製背板予以接合，採用拉伸試驗裝置AUTOGRAPH AGS-500B(島津製作所（曰本）製造），測定出室溫（23°C)下 的接合強度。此外，一邊以熱電偶對接合部附近進行溫度 φ 的測量，一邊以Heating Gun(白光社（日本）製造）進行加 熱，並各自對溫度上升時（60°C、90°C、120°C、150°C)的 接合強度進行測定。 結果如第2表所示。 此外，採用與實施例2相同的方法測定各個背板（Cu) 的侵蝕量，可獲得與實施例2的結果為幾乎相同之值。 18 317999 132U59 靶材（組成（重量％)) ---— __—r;— 接合強度(kgf/mn〇 23 V 60°C 90°C 120°C 150BC 5.8 5.2 4.8 4.5 3.8 AI-Ni 合金(Al/Ni=97/3) f施例3 Al-Nd 合金(Al/Nd=97/3) f施例4 5.8 5.2 4.8 4.5 3.8 5.8 5.2 4.8 4.5 3.8 A】-Cu 合金(Al/Cu=97/3) 营施例5 5.8 5.2 4.8 4.5 3.8 AI-Ti 合金(Al/Ti=97/3) 营施例6 Ti 實施例7 5.8 5.2 4.8 4.5 3.8 Ti-W 合金(Ti/W=90/10) 實施例8 5.8 5.2 4.8 4.5 3.8 Mo 實施例9 5.8 5.2 4.8 4.5 3.8 Mo-W 合金（Mo/W=90/10) 實施例 5,8 5.2 4.8 4.5 3.8 丁 a 實施例11 5.8 5.2 4.8 4.5 3.8 Si 實施例12 5.8 5.2 4.8 4.5 3.8 Nb 實施例13 5,8 ------ ___5.2 4.8 4.5 3.8 • Cu 實施例14 5.8~~ 5.2 4 8 Λ < 3.8 3.8 Cr 實施例15 5.8' 4.8 --------- 4.5 • _ Ag 實施例16 5.8~~~ 5 2 4.8 4.5~~ ~ΤΓ~ ---- 合金(Ag/Pd=97/3) 實施例17 5.8 *^ _ 3.8 ^2 4.8 .J. —3.8 從第2表可知，當使用本發明之 Cu製背板予以接合時，不論靶材種卖’。而將靶材與 之高溫時的接合強度。 何’均可維持較高Sample No. Composition (wt%) Melting point (°C) Bonding strength (kg^mm2) Cu intrusion amount (wt%) Wetting property with A1 23〇C 60°C 90°C 120°C 150°C 1 Example 1 Sn-3Zn 215 6.3 5.5 4.9 . 4.7 3.8 0.21 AA 2 Example 2 Sn-9Zn 199 5.8 5.2 4.8 4.5 3.8 0.05 AA 3 Comparative Example 1 lOOSn 231 7.2 5.8 4.8 4.4 3.8 1.8 AA 4 Comparative Example 2 Sn-lZh 225 6.9 5.8 4.7 4.4 3.5 1.2 AA 5 Comparative Example 3 Sn-lOZn 216 4.0 3.7 3.0 2.6 2.2 0.16 AA 6 Comparative Example 4 Sn-15Zn 251 3.8 3.5 2.9 2.6 2.1 0.05 AA 7 Comparative Example 5 1001η 157 1.8 1.3 0.9 0.6 0.1 2.9 BB 8 Comparative Example 6 In-85Sn 183 42 2.2 1.9 1.7 1.4 1.6 BB 17 317999 1321159 ' As can be seen from the first table, Examples 1 and 2 (Sample No. 1, 2) are compared with Comparative Examples 2 to 6 (Sample No) Different from .3 to 8), the joint strength at high temperature is high, and the amount of Cu corrosion caused by the back sheet can be remarkably reduced, and the wettability with the target made of A1 is also excellent. Further, it is understood that the melting points of Examples 1 and 2 (Sample No. 1 and 2) are in a desired range in addition to the efficiency of the sputtering target manufacturing operation. (Examples 3 to 17) ^ Using the solder alloy of sample No. 2 (Sn/Zn (% by weight) = 91/9) of the above-mentioned Example 2, various kinds of cylindrical pieces of W 10 mm x 5 Omm without a backing film were used. Material (A1 alloy, Ti, Ti alloy, Mo, Mo alloy, Ta, Si, Nb, Cu, Cr, Ag, Ag alloy) and 20mm x 20mm x 5mmt • Cu backing plate, using tensile test device AUTOGRAPH AGS-500B (Shimadzu Corporation (manufactured by Sakamoto)) The joint strength at room temperature (23 ° C) was measured. In addition, while measuring the temperature φ in the vicinity of the joint by a thermocouple, heating is performed by a Heating Gun (manufactured by Hakusho Co., Ltd.), and each temperature rises (60 ° C, 90 ° C, 120 ° C, The bonding strength at 150 ° C) was measured. The results are shown in Table 2. Further, the amount of erosion of each back sheet (Cu) was measured in the same manner as in Example 2, and a value almost the same as that of Example 2 was obtained. 18 317999 132U59 Target (composition (% by weight)) --- __-r; — Bonding strength (kgf/mn〇23 V 60°C 90°C 120°C 150BC 5.8 5.2 4.8 4.5 3.8 AI-Ni alloy ( Al/Ni=97/3) fExample 3 Al-Nd alloy (Al/Nd=97/3) fExample 4 5.8 5.2 4.8 4.5 3.8 5.8 5.2 4.8 4.5 3.8 A]-Cu alloy (Al/Cu=97 /3) Camp 5 5.8 5.2 4.8 4.5 3.8 AI-Ti alloy (Al/Ti=97/3) Example 6 Ti Example 7 5.8 5.2 4.8 4.5 3.8 Ti-W alloy (Ti/W=90/10 Example 8 5.8 5.2 4.8 4.5 3.8 Mo Example 9 5.8 5.2 4.8 4.5 3.8 Mo-W alloy (Mo/W = 90/10) Example 5, 8 5.2 4.8 4.5 3.8 D A Example 11 5.8 5.2 4.8 4.5 3.8 Si Example 12 5.8 5.2 4.8 4.5 3.8 Nb Example 13 5,8 ------ ___5.2 4.8 4.5 3.8 • Cu Example 14 5.8~~ 5.2 4 8 Λ < 3.8 3.8 Cr Example 15 5.8' 4.8 --------- 4.5 • _ Ag Example 16 5.8~~~ 5 2 4.8 4.5~~ ~ΤΓ~ ---- Alloy (Ag/Pd=97/3) Example 17 5.8 *^ _ 3.8 ^ 2 4.8 .J. — 3.8 As can be seen from the second table, when the backing plate made of Cu of the present invention is used for bonding, regardless of the target species, the target is bonded to the high temperature. Degree. He 'can be maintained at a high
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