CN1880492A - Welding alloy for sputtering target production and sputtering target - Google Patents
Welding alloy for sputtering target production and sputtering target Download PDFInfo
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- CN1880492A CN1880492A CNA2006100832910A CN200610083291A CN1880492A CN 1880492 A CN1880492 A CN 1880492A CN A2006100832910 A CNA2006100832910 A CN A2006100832910A CN 200610083291 A CN200610083291 A CN 200610083291A CN 1880492 A CN1880492 A CN 1880492A
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- alloy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
The present invention relates to a jointing alloy of two or more metallic elements for jointing butt and underprops whose raw materials include Cu or alloy of Cu and other metallic elements when making spatter butt. Characterized in that it contains 3 to 9 percent Zn, Sn and sundries that cannot be cleaned.
Description
Technical field
The present invention relates to the sputtering target manufacturing with welding alloy and use the sputtering target of its manufacturing.Relate in particular to, when engaging target, use with back up pad manufacturing sputtering target, also have under the hot conditions high bond strength and to the corrosion of Cu system or Cu alloy system back up pad very little, welding alloy and use the sputtering target of its manufacturing.
Background technology
In the past, sputtering method was one of well-known film forming method.
The target that this sputtering method is used, because of constantly be subjected to the impact of high energy particles such as ion during sputter, its inside is accumulated heat and is formed high temperature.For this reason, usually be that the material cooling plate that make, that be called as back up pad of good heat conductivity such as alloy engages, by cooling off this back up pad, the temperature of reduction target with target and Cu or Cu.
Target can wherein use the method for the former grafting material the most common by the grafting material joint or by diffusion bond with engaging of back up pad.
In the past, be extensive use of low-melting In or be that the In alloy of principal constituent is as grafting material (patent documentation 1) with In.
But,, the problem of the needs of the big areaization of the target that can't be corresponding produces along with the requirement that bare glass is maximized of in recent years flat-panel monitor industry and thick typeization is arranged with the grafting material that In or In alloy constitute.Concrete having of taking place, the warpage of the target self that causes because of the big areaization of target, the problem that target peels off from back up pad, in addition, the temperature of the target that the increase of the power density that drops into during because of sputter causes rises, and when becoming high temperature because of the layer of bonding material such as reduction of cooling performance thick type initiation, during sputter, the bond strength deficiency of grafting material and problem that target peels off from back up pad.Also have price to rise steadily, aspect cost, also have problems because of In.
At the problems referred to above, take the method for using as grafting material with pure Sn usually.But pure Sn and supporting plate material Cu or Cu alloy react, the corrosion back up pad.
Usually, back up pad is to strip from the engaged target that has used, is reengaged on the new product target to use repeatedly.If back up pad all is corroded then the attenuation at leisure of the thickness of back up pad, the weakened of himself between each joint conditioning time.The warpage that causes because of weakened can take place in the result, the final warpage of the target that engages and the problem of fracture of causing.In addition, the inside of most of back up pad is provided with water-cooled tube, therefore reduces because of intensity or warpage may cause leaks.
At the problem that this type of back up pad is corroded, prior art has, to the method for back up pad plating Ni.But the Ni that the quilt of this method plates also can be corroded, thus in the using repeatedly of back up pad, need to implement regular plating Ni, concerning production efficiency or cost aspect and nonideal solution.
In patent documentation 2, putting down in writing the sputtering target that the welding alloy that constitutes with In (30～60 weight %)-Sn (30～60 weight %)-Zn (0.1～10 weight %) engages in addition.But, if the content of In then can generate intermetallic compound β-In more than 27 weight %
3Sn causes that eutectic reveals, and the undercapacity when high temperature takes place can't solve the problem that target peels off from back up pad.
Putting down in writing in the patent documentation 3, be provided with the sputtering target of 2 layers of layer of bonding material between target and the chromium back up pad made of copper.Wherein, the grafting material of the 1st layer of bonding material that contacts with target is Sn (90～70 weight %)-Zn (10～30 weight %) alloy, and the 2nd layer of bonding material that contacts with back up pad is the In-Au-Sn alloy.But the 1st layer of bonding material is because of containing Zn in a large number, easily generates the problem that oxide compound reduces bond strength.In addition more than the Pb content 1000ppm of the 2nd layer of bonding material, big to the influence of environment, because of not meeting the rules that RoHS instructs etc., in fact can't use.
Patent documentation 4 is being put down in writing, and is purpose so that the sputtering target that is difficult for peeling off to be provided, and is the sputtering target that back up pad engages with the Sn-Pb-Ag welding alloy with the Al series target material with Al.But, more than the Pb content 1000ppm because of this welding alloy, so can't use identical and actual with above-mentioned reason.
Patent documentation 5 is being put down in writing, the lead-free solder that Al (0.01～3.0 weight %)-In (0.1～50 weight %)-Ag (0.1～6.0 weight %)-Cu (0～6.0 weight %)-Zn (0～10.0 weight %)-Sn (remainder) constitutes.The related lead-free solder of electronic components such as this type of printed-wiring board (PWB) purposes generally uses polynary system (3 yuan be, 4 yuan be even be 5 yuan of systems) alloy, but needs costs such as modulation multielement and cost cost of equipment.For example, in patent documentation 5, be 962 ℃ Ag for zero deflection ground melts fusing point, need equipment and Ag raw material costs such as High Temperature Furnaces Heating Apparatus.If these welding alloies are used to engage big area (more than the 1.5m angle) target grafting material then, the scolder component that easily takes place in the junction surface departs from, intensity is unequal.Other, because of the Ag of welding alloy or the amount of In, the contained Cu reaction of Ag and back up pad generates intermetallic compound, causes that bonding strength descends, In and Sn reaction generation intermetallic compound (as, β-In
3Sn), cause that eutectic reveals, the undercapacity when high temperature takes place can't solve the problem that target peels off from back up pad.
Patent documentation 6 has been put down in writing Sn-Zn (the 9 weight %) alloy of the related lead-free solder of electronic components such as known technology printed-wiring board (PWB) purposes, and the welding alloy that provides Zn (3～5 weight %)-Bi (10～23 weight %)-Sn (remainder) to constitute.But these welding alloies belong to the related lead-free solders of electronic component such as printed-wiring board (PWB) purposes, do not have record to be used for the grafting material that sputtering target is made.And the amount shown in the latter is added Bi then, and the fusing point of scolder significantly descends, and the undercapacity when high temperature takes place can't solve the problem that target peels off from back up pad.
Put down in writing the Pb-free solder alloy that Sn (85～92 weight %)-Ag (1～6 weight %)-In (4～10 weight %) constitutes in the patent documentation 7, putting down in writing the Pb-free solder alloy that Sn (92～97 weight %)-Ag (3～6 weight %)-Cu (0.1～2.0 weight %) constitutes in the patent documentation 8.But this type of does not contain the component of Zn, can't solve the problem that the back up pad of Cu system or Cu alloy system is corroded.And above-mentioned component contains the amount of Ag more than 2000ppm, so Ag and the contained reaction generation intermetallic compounds such as Cu of back up pad are arranged, reduces the possibility of bond strength.
Put down in writing the lead-free solder of prior art Sn (91.2 weight %)-Zn (8.8 weight %) in the patent documentation 9.But it is the lead-free solder of the welding usefulness of Optical devices and micro-electronic device, is not used in the relevant record that sputtering target is made grafting material.
Put down in writing when making sputtering target the technology that the back up pad of formations such as target and Cu engages by low-melting solder (Sn-Zn scolder etc.) in the patent documentation 10.But about the concrete not record of component of Sn-Zn scolder.
In the past, when the liquate of target and grafting material is inferior, on the junction surface of target,, formed the Cu film or the Ni-Cu alloy film of mucous membrane in being called as, guaranteed liquate by sputter or evaporation.These class methods are because of the needs film deposition system, so have cost height, operation to reduce the problem of production efficiency often.
Patent documentation 1: the spy opens flat 7-48667 communique
Patent documentation 2: the spy opens flat 7-227690 communique
Patent documentation 3: the spy opens flat 8-269704 communique
Patent documentation 4: the spy opens flat 10-46327 communique
Patent documentation 5: the spy opens the 2000-141078 communique
Patent documentation 6: the spy opens flat 8-164495 communique
Patent documentation 7: the spy opens flat 8-187591 communique
Patent documentation 8: the spy opens flat 9-326554 communique
Patent documentation 9: the spy opens flat 8-118067 communique
Patent documentation 10: the spy opens the 2001-340959 communique
Summary of the invention
Purpose of the present invention engages target and Cu system or Cu alloy system back up pad for being provided at, make use when the sputtering target, also have very high bond strength during high temperature and corrode atomic welding alloy and use the sputtering target of its manufacturing because of the back up pad that engages generation.
In addition, the present invention also provides, have do not need in the mucous membrane degree good target liquate welding alloy and use the sputtering target of its manufacturing.
Inventor of the present invention, In view of the foregoing, obtain following result through concentrating on studies: 2 yuan of the Zn that contains specified quantitative that will be main component with Sn are welding alloy as the grafting material use that engages target and Cu system or Cu alloy system back up pad then, under the situation that the temperature that engages the material layer because of too drastic sputtering condition rises, also can keep very high bond strength, prevent target peeling off on the back up pad.And can significantly reduce the etching extent of back up pad and can improve the liquate of target by this welding alloy, until finishing the present invention.
That is, the present invention relates to following item.
Welding alloy of the present invention is when sputtering target is made, and is used to engage the welding alloy of target and Cu system or Cu alloy system back up pad, it is characterized by, and Zn content is 3～9 weight %, and remainder is Sn and the foreign material that can't remove.
Among the present invention, above-mentioned target is preferably with metal or alloy and constitutes, and more elects as with Al or Al alloy to constitute.
Being characterized as of sputtering target of the present invention uses above-mentioned solder bonds target and Cu system or Cu alloy system back up pad to obtain.
The layer of bonding material that also has high bond strength in the time of can forming high temperature by welding alloy of the present invention, therefore can prevent also that under too drastic sputtering condition target from peeling off from back up pad, and significantly reduce the Cu amount of being corroded of back up pad between joint conditioning time, can prevent the strength deterioration when this back up pad is used repeatedly.
In addition, welding alloy of the present invention has the good target liquate that does not need interior mucous membrane degree, therefore can omit the device and the operation of mucous membrane in making, and significantly improves the production efficiency of manufacturing sputtering target.
And, by sputtering target of the present invention, can cater to the needs that bare glass maximizes, stablize and carry out the formation of large area film.
Embodiment
Below will be specifically described the present invention.
" sputtering target manufacturing welding alloy "
Welding alloy of the present invention is, when sputtering target is made, is used for the grafting material that engages of target and Cu system or Cu alloy system back up pad, it is characterized by, and Zn content is 3～9 weight %, and remainder is Sn and the foreign material that can't remove.The described foreign material that can't remove are meant that can't remove, trace, other element except that Zn and Sn that alloy is contained.Be that welding alloy of the present invention is actually with Sn and Zn formation.
This welding alloy is main component with Sn, so also can keep high bond strength when high temperature.Be specially, when using this welding alloy to engage target and Cu system or Cu alloy system back up pad, the bond strength under 150 ℃ can reach 2.5Kgf/mm
2More than, can reach 3.0Kgf/mm when preferred
2More than.And, do not limit the higher limit of bond strength this moment.The bond strength height of this welding alloy during because of high temperature is so after using this welding alloy to engage target and Cu system or Cu alloy system back up pad, even if the rising of the temperature of layer of bonding material can prevent that also target from peeling off from back up pad under the too drastic sputtering condition.
The Zn amount that contains of this welding alloy is at above-mentioned specified range, so can restrain the reaction of Sn and the principal element Cu that constitutes back up pad in the welding alloy, significantly the back up pad that reduces between joint conditioning time is corroded, and can adjust the fusing point of alloy in preferable range, and can improve the liquate of target.
The Zn content of this welding alloy has and target if discontented above-mentioned lower value then, can cause the etching extent of back up pad Cu to increase between joint conditioning time, especially makes the tendency of the liquate step-down of target with Al.On the other hand, if exceeding above-mentioned higher limit then generates oxide compound easily, have the tendency that bonding strength descends when Zn content.
The material of back up pad that is suitable for using welding alloy of the present invention as grafting material is from good with the liquate of this welding alloy, and the angle that especially bonding strength is high is considered, is preferably Cu and Cu alloy, more preferably Cu.The Cu alloy has the alloy with the Cu principal constituent such as chromium-copper.The welding alloy of the application of the invention when target engages by welding alloy with above-mentioned Cu system or Cu alloy system back up pad, can significantly reduce the corrosion of back up pad Cu, so, can prevent this back up pad using repeatedly strength deterioration.
The fusing point of above-mentioned welding alloy is preferably 198～220 ℃ (or the eutectic point of Sn-Zn alloy is 198 ℃).When exceeding 220 ℃, alloy melting point can promote the oxidation of welding alloy and back up pad, the danger that has conjugation grade to descend.In addition, because of being that high temperature can't be guaranteed operability, reduce productivity and yield rate.
Welding alloy of the present invention does not have particular determination as the material of the target that grafting material is suitable for, but specifically Al is arranged, any one metal and Si among Ti, Mo, Ta, Nb, Cu, Cr, the Ag, or be at least with wherein a kind of be the alloy of main component.
Above-mentioned alloy comprises: as the Al alloy of Al-Ni alloy, Al-Nd alloy, Al-Cu alloy, Al-Ti alloy etc.; The Ti alloy of Ti-W alloy etc.; The Mo alloy of Mo-W alloy etc.; The Ag alloy of Ag-Pd alloy, Ag-Au alloy etc.; The Cu alloy of Cu-Ni alloy etc.; The Cr alloy of Cr-Ni alloy etc. etc.These alloy components can be according to suitably definite, without particular limitation by the film component that sputter is made.
Wherein, rise easily by temperature, make the present invention more effectively bring into play the angle of effect, be preferably Al target or Al alloy target material from apply big electric power by sputter.When using In or Sn as grafting material in the joint of this type of Al or Al alloy target material, low with the liquate of target, so generally adopt by sputter or evaporation, the junction surface of target plate be called as in the Cu film of mucous membrane or the method for Ni-Cu alloy film guarantee liquate.But these class methods so have cost height, operation to reduce the problem of production efficiency often, are not preferred method because of the needs film deposition system.
Be directed to this, welding alloy of the present invention is because of good with the liquate of Al or Al alloy target material, so the not formation of the above-mentioned interior mucous membrane of special requirement can reduce cost and boost productivity.
When welding alloy of the present invention is manufactured the above-mentioned amount of mentioned component, can use acquisitions such as existing methods measures, adds, stirs, mixes, heats, melts, cooling, its manufacture method is not had particular restriction.
" sputtering target "
Sputtering target of the present invention is to use usual method, obtains by the formed joint material of welding alloy of the present invention layer joint target and back up pad.
The shape self of above-mentioned target target and back up pad there is no particular restriction, as long as their junction surface is substantial parallel.And,, can carry out the asperities processing as required in order to improve the liquate of welding alloy more.
Be specially, as processing such as milling cutter, lathe, surface grinding machine are passed through on the junction surface of target, after carrying out asperities processing described later as required, by cleaning and degreasing of with an organic solvent waiting, after this target being heated to the above temperature of fusing point of welding alloy, coat the welding alloy that melts state on its junction surface, when forming layer of bonding material with dip coating, back up pad is carried out degreasing too, be heated to the above temperature of welding alloy fusing point.To get involved in the middle of their junction surface under the state of layer of bonding material, in conjunction with being added on suitable engage pressure target and back up pad, make sputtering target relatively.Pressure during pressurization does not have particular restriction, the pressure of target area is generally 0.0001～0.1MPa gets final product.
If need then, also can with above-mentioned same method when the junction surface of target forms layer of bonding material, after degreasing, heated support plate junction surface are coated with welding alloy formation layer of bonding material equally, be heated under the above state of welding alloy fusing point, getting involved in the middle of their junction surface under the state of layer of bonding material, in conjunction with pressurizeing.
As the above-mentioned sputtering target knitting layer that obtains, the opposing of considering welding alloy then, its thickness is answered below the 2mm usually, is preferably 0.1～1mm.And can will carry out correction process to it after the sputtering target cool to room temperature temperature that obtain.
Below will carry out more specific description to the present invention, but the present invention is not limited to following embodiment according to embodiment.
Embodiment 1～2, comparative example 1～6
Modulated Sn-Zn welding alloy (being called test portion No.1,2 in order) with raw material Sn (purity 99.99%), Zn (purity 99.99%) with Sn/Zn (weight %)=97/3,91/9 ratio.
As a comparison, modulated Sn-Zn welding alloy (being called test portion No.3～6 in order) with same materials with Sn/Zn (weight %)=100/0,99/1,90/10,85/15 ratio.
In addition, as a comparison, modulated welding alloy (being called test portion No.7,8 in order) with In/Sn (weight %)=100/0,15/85 ratio with raw material In (purity 99.99%), Sn (purity 99.99%).
In order to following method (1) fusing point, the temperature dependency of (2) bond strength, the etching extent of (3) back up pad (Cu), (4) of test portion No.1～8 of analysing gained are estimated with the liquate of Al system target.The result is as shown in table 1.
(1) Measurement of melting point method
With above-mentioned test portion No.1～8, on differential thermal analysis device TG-DTA2000S (manufacturing of MAC Science company), be determined at respectively with the 20 ℃/time of heat-up rate, the thermo-negative reaction peak value when being heated to 300 ℃ is decided to be fusing point with the temperature of this peak value.
(2) measuring method of bond strength (the temperature dependent evaluation method of bonding strength)
Use above-mentioned test portion No.1～8 respectively, with do not have in after the cylindrical Al target of Ф 10mm * 50mm and the Cu of 20mm * 20mm * 5mm t of mucous membrane make back up pad and engage, re-use the autoplotter AGS-500B (Shimadzu Seisakusho Ltd.'s manufacturing) of tensile test apparatus, under room temperature (23 ℃), carried out bond strength mensuration.In addition, use Heating Gun (manufacturing of white light society) to heat simultaneously with near the temperature the thermocouple measurement junction surface, the bond strength when temperature is risen (60,90,120,150 ℃) is measured too.
(3) measuring method of the etching extent of back up pad (Cu)
With above-mentioned test portion No.1～8, use the supersonic welding flatiron respectively, primary coat is made above back up pad 50mm * 50mm at the Cu that is heated to 260 ℃ on hot-plate.After the primary coat, with silicon (oxygen) rubber hairbrush the welding alloy above the back up pad is cut and to be got, (SPS5100) analyze, measure the Cu amount with ICP (plasma luminescence spectroscopy apparatus).
(4) with the evaluation method of the liquate of Al system target
With above-mentioned test portion No.1～8, use the supersonic welding flatiron respectively, make in back up pad 50mm * 50mm at the Al that on hot-plate, is heated to 260 ℃ with primary coat in 10 seconds.Thereafter, with Al make be heated to 260 ℃ once more after the temporary transient cool to room temperature temperature of target after, cut with silicon (oxygen) rubber hairbrush and to get this welding alloy above Al target.Cut get after, whether evenly residual on Al system target side with the visual observation welding alloy.Good to liquate, welding alloy on the side evenly residual do not peeled off be evaluated as AA, the low welding alloy of liquate peels off is evaluated as BB.
Table 1
As shown in table 1, embodiment 1 and 2 (test portion No.1,2) compares with comparative example 2～6 (test portion No.3～8), the bond strength height during high temperature, and can significantly reduce the erosion of the Cu of back up pad origin, and, good with the liquate of Al system target.
In addition, the fusing point of embodiment 1 and 2 (test portion No.1,2) also improving on the sputtering target manufacturing process efficiency basis, is in the preferable range.
Embodiment 3～17
Use test portion No.2 (Sn/Zn (weight %)=91/9) welding alloy of the foregoing description 2, after the columniform various targets of Ф 10mm * 50mm (Al alloy, Ti, Ti alloy, Mo, Mo alloy, Ta, Si, Nb, Cu, Cr, Ag, Ag alloy) of mucous membrane in not having and the Cu of 20mm * 20mm * 5mm t made back up pad and engage, re-use tensile test apparatus autoplotter AGS-500B (Shimadzu Seisakusho Ltd.'s manufacturing), carried out bond strength mensuration in room temperature (23 ℃).In addition, on one side with near the temperature the thermocouple measurement junction surface time with Heating Gun (heating gun; White light society makes) heat, each bond strength when also respectively temperature being risen (60,90,120,150 ℃) is measured.
Its result is as shown in table 2.
In addition, use the method identical to measure the result of the etching extent of each back up pad (Cu) with embodiment 2, with the result of embodiment 2 much at one.
Table 2
As shown in table 2, show and use welding alloy of the present invention, when engaging target and Cu system back up pad, be not subjected to the restriction of target kind, the bond strength in the time of can keeping high temperature expeditiously.
Claims (4)
1, a kind of welding alloy is when making sputtering target, is used to engage the welding alloy of target and Cu system or Cu alloy system back up pad, it is characterized by,
Zn content is 3～9 weight %, and remainder is Sn and the foreign material that can't remove.
2, welding alloy as claimed in claim 1 is characterized by, and above-mentioned target is made of metal or alloy.
3, welding alloy as claimed in claim 1 is characterized by, and above-mentioned target is made of Al or Al alloy.
4, a kind of sputtering target is characterized by, and uses any described welding alloy of claim 1～3, engages target and Cu system or Cu alloy system back up pad and obtains.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005175628 | 2005-06-15 | ||
| JP2005175628 | 2005-06-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1880492A true CN1880492A (en) | 2006-12-20 |
| CN100590213C CN100590213C (en) | 2010-02-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610083291A Active CN100590213C (en) | 2005-06-15 | 2006-05-31 | Welding alloy for sputtering target production and sputtering target |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100785208B1 (en) |
| CN (1) | CN100590213C (en) |
| TW (1) | TWI321159B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102409300A (en) * | 2011-09-07 | 2012-04-11 | 三峡大学 | Oxide ceramic sputtering target and preparation method thereof and used brazing alloy |
| CN103785911A (en) * | 2012-10-30 | 2014-05-14 | 宁波江丰电子材料有限公司 | Welding process of target assembly |
| CN105593398A (en) * | 2013-12-09 | 2016-05-18 | 三菱综合材料株式会社 | In or In alloy sputtering target, and method for producing same |
| CN106541220A (en) * | 2015-09-23 | 2017-03-29 | 住华科技股份有限公司 | Solder, sputtering target and method for manufacturing sputtering target |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0704272B1 (en) * | 1994-09-30 | 2002-01-09 | AT&T Corp. | Lead-free alloys for use in solder bonding |
| JP3319740B2 (en) * | 2000-06-02 | 2002-09-03 | 株式会社日鉱マテリアルズ | Brazing material coating device |
-
2006
- 2006-05-30 KR KR1020060048584A patent/KR100785208B1/en active IP Right Grant
- 2006-05-31 CN CN200610083291A patent/CN100590213C/en active Active
- 2006-06-15 TW TW095121366A patent/TWI321159B/en active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102409300A (en) * | 2011-09-07 | 2012-04-11 | 三峡大学 | Oxide ceramic sputtering target and preparation method thereof and used brazing alloy |
| CN103785911A (en) * | 2012-10-30 | 2014-05-14 | 宁波江丰电子材料有限公司 | Welding process of target assembly |
| CN103785911B (en) * | 2012-10-30 | 2016-03-09 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN105593398A (en) * | 2013-12-09 | 2016-05-18 | 三菱综合材料株式会社 | In or In alloy sputtering target, and method for producing same |
| CN105593398B (en) * | 2013-12-09 | 2017-07-25 | 三菱综合材料株式会社 | In or In alloy sputtering targets and its manufacture method |
| CN106541220A (en) * | 2015-09-23 | 2017-03-29 | 住华科技股份有限公司 | Solder, sputtering target and method for manufacturing sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060131625A (en) | 2006-12-20 |
| CN100590213C (en) | 2010-02-17 |
| KR100785208B1 (en) | 2007-12-11 |
| TW200643193A (en) | 2006-12-16 |
| TWI321159B (en) | 2010-03-01 |
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