TWI317415B - Methed for manufacturing a heat sink - Google Patents

Methed for manufacturing a heat sink Download PDF

Info

Publication number
TWI317415B
TWI317415B TW94124909A TW94124909A TWI317415B TW I317415 B TWI317415 B TW I317415B TW 94124909 A TW94124909 A TW 94124909A TW 94124909 A TW94124909 A TW 94124909A TW I317415 B TWI317415 B TW I317415B
Authority
TW
Taiwan
Prior art keywords
heat sink
manufacturing
sink according
carbon nanotubes
heat
Prior art date
Application number
TW94124909A
Other languages
Chinese (zh)
Other versions
TW200704909A (en
Inventor
Tsai Shih Tung
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW94124909A priority Critical patent/TWI317415B/en
Publication of TW200704909A publication Critical patent/TW200704909A/en
Application granted granted Critical
Publication of TWI317415B publication Critical patent/TWI317415B/en

Links

Description

1317415 • 九、發明說明: • 【發明所屬之技術領域】 本發明係種散熱ϋ之製造紐,特师及—縣面具有奈米碳 管之散熱器之製造方法。 【先前技術】 近年來,隨著半導體器件集成工藝之快速發展,半導體器件之集成化程 度越來越高’惟’ ϋ件體積卻變得絲越小,其對散熱之需求越來越高, 已成爲-越來越重要之問題。爲滿足該需要,風肩散熱、水冷輔助散熱及 • 熱管散熱等各種散熱方式被廣泛運用,並取得一定之散熱效果。 . 散熱器中最重要之兩個熱傳機制係熱傳導及熱對流。熱傳導指分子間之 能量交換。能量較少之分?無量較彡之分子接觸後獲舰量(通過物理性 之直接接觸)。如果兩者間不存在溫差(如一片獨立散熱片),則無法實現熱 傳導。熱傳導係散熱片從CPU吸取熱量之最主要途徑。傳統之散熱器通 會於散熱片與熱源(半導體集成器件’如CPU)之間增加一導熱係數較高之熱 介面材料,即TIM(Thermal Interface Material),使CPU所產生之熱能更有 效地被傳導到散熱片上。然而,想要降低溫度,熱對流佔有很大之影響因 素。熱對流係指透過物質運動來實現熱傳遞,熱能來自於被氣體或液體所 鲁包圍之熱源,並且透過分子移動來實現熱能傳遞。於散熱器中,cpu所產 生之熱量乘終會通過散熱雜片傳遞到空氣中,由流體依靠對流現象帶走。 目前之散熱器多採用風扇通過強迫對流之方式來進行散熱。 而散熱效果與散熱片之表面積即鰭片與空氣之接觸面積有關,熱交換面 積越大,散熱效果就越好。一般散熱器於強迫對流與有限空間條件限制下, 欲發揮最大散熱能力,皆想方設法地改進設計以增大散熱面積,目前廣泛 使用之散熱器大多為鰭片式設計,鰭片式散熱器使重量及散熱面積皆達 相當理想之狀態。 目前市場上之鰭片式散熱器主要包括長條形鰭片散熱器與圓柱形韓片 散熱器。長條形鰭片散熱器大部分係壓鑄成型,即將金屬高溫熔融後壓入 模具鑄成鑄件之金屬成型方法,該方法工藝簡單,可根據不同需要將散熱 1317415 片做成多種形狀。惟’此類加工方法受到製造卫藝之制約,其散熱縛片之 後集程度較小’導致其散熱面積受到—定限制。圓柱我片散熱器由於其 散熱縛片呈圓柱狀,具有較高之密集程度,因而具有相對較大之散轨面積。 另外,在眺型鰭片周圍,因為流體之阻力較小,流體料_’,也因此 容易帶走在圓柱上之能量,加強了對流之效果,因此於相同面積之散續 片裡’圓柱型縛片皆會比長條型錯片有著更好之熱傳效果。惟,圓柱形散 熱縛片對製作卫藝要求較高,其製作上難度較大,因而成本較高。且其密 度雖然較長條形散_片大,亦受—定之限制,進__步增大僅能辦 整個散熱鰭片體積。 a 先前技術提供-種散抑之製造方法,該方、法係於散熱則表面使用 化學,相沈積法㈣m树管_。惟,使用化學氣相沈積法生長奈 米碳管_需於散_片表面紐積—催化歸,該催化劑層之均句程度 將影響所形成之絲碳管陣狀均勻程度,而當前之散熱器則間距ς 小’受該較小間距之影響,於雜藉片表面沈積一均勻催化劑層難度很大, 導致很難於散熱鰭片表面上生長出均勻奈米碳管陣列,最終影響散教 散熱效果。 ° 有鑒於此提供種不丈散熱器韓片間距限制,於散熱韓片表面开》成 均勻奈米碳管之散熱器之製造方法實為必要。 【内容】 以下’將以實_制-鮮受散鮮則間距 面形成均妓米碳管之餘H之製造方法。 …韓片表 為實現上述内容’提供-種散熱器之製造方法,其可包括 提供複數散熱鰭片; 輝· 對所述複數散舰絲面進行處理,使其表面帶第-雜之電荷; 對製備好之概奈米碳管進行處理,使其-端帶上與所述第 反之第二電性之電荷; 电相 將帶電之複數奈米碳管與帶電之複數散熱錯片一併置於一液體中,使 π電之複數奈米碳管吸附於帶電之複數散麟片表面上。 所述對散熱鰭片表面進行處理係採用化學物質處理。 1317415 . 所述化學物質含有HC〇3—、hso3—、Ν〇3、α-中之_ 騎化學物質含有ΝΗ4+。 11中之''種或幾種。 射消複數奈米後管之製備方法包括化學氣相沈積法、電弧放電法及雷 解質複數麵辦進減理储所妓料管-挪置於-聚合電 合電靖錄撕,對所述聚 所述聚合電解質溶液爲聚四苯乙稀硫酸鈉溶液。 所述聚合電解質溶液爲聚氣化二烯丙基二甲^ .ί電之複數奈米碳管與帶電之複數散傭片-併置於-液體 過程中,對所述液體進行加熱或進行超音波震蕩。 所述對液體進行加熱之加熱溫度爲40〜9〇(3c。 所述液體為水、乙醇、甲醇、乙趟、乙酸等之一種或幾種之混合。 種或料壁奈、魅絲奸衫妓純管中之一 所述奈米碳管長度爲0.2〜1〇微米。 所述奈米碳管之直徑爲0.2〜200奈米。 _ ^韻於複錄_>;表面上之奈米碳管彼辭行且妓於散熱韓 月表由。 所述吸附於複數散熱鰭片表面上之奈米碳管彼此間距基本相同。 先前技術_鮮氣她積祕散_絲面生長奈純管 於散熱鰭片表面統積-催化劑層,由於受到散_片間距之影響,難以 於散_片表面沈積-均勻催化劑層,導致無法於散_片表面上 ^勻奈米碳管_,麟導致該散鮮散鮮均勻。與其相比,本實 ,供之散熱H之製造方法靜電簡雜,分騎散_片及奈米碳管 订處理’使它們帶相反電性,通過靜電吸附使奈米碳管自動吸附至散熱 鰭片表面上,從而避免於散熱韓片表面沈積催化劑等物質,消除散熱^ 1317415 % •間距之影響且由於按此法可使複數奈米碳管垂直於散熱輯片表面,可充 -分發揮奈米碳管之縱向賴躲。此外,由於處理後之散熱鰭片表面帶電 均勻,從而使得奈米碳管分佈均勻,使得散熱器之散熱更加均勻一致。 【實施方式】 下面結合附圖對本技術方案作進一步詳細說明。 請參閱第一圖,本技術方案提供之散熱器之製造方法,包括以下步驟·· 提供複數散熱鰭片;對所述複數散熱鰭片表面進行處理,使其表面帶第一 電性之電荷;對製備好之複數奈米碳管進行處理,使其一端帶上與所述第 一電性相反之第二電性之電荷;將所述複奈米、碳管與所述複數^熱鰭片 一併置於一液體中,使奈米碳管吸附於所述複數散熱鰭片表面上。;面再 結合實施例對本技術方案提供之散熱器之製造方法作詳細說明,請結合第 一圖並一併參閱第二圖至第六圖。 步驟100 :提供複數散熱轉片10,如第二圖所示。其中該散熱鰭片1〇可 為任何形狀之散熱鰭片,其既可為平板形散熱鰭片亦可為彎曲形散熱鰭片 或該散熱鰭片既有平板段亦有彎曲段,且該散熱鰭片還可進一步包^二底 座 11 〇 - 步驟200 .對所述散熱鰭片10表面進行處理,使其表面帶第一電性之電 荷。該處理方法可為化學方法或物理方法,優選地,使用化學方法處理即 • 通過化學物質處理使散熱鰭片表面帶電,一般通過該方法處理之散熱鰭 片10表面帶電皆比較均勻。可通過使用不同化學物質處理散熱鰭片1〇表 面,使散熱鰭片10表面帶正電或負電。欲使散熱鰭片10表面帶正電,則所 使用之化學物質應具有陽離子,如NIV等,欲使散熱鰭片表面帶負電,則 所使用之化學物質應具有陰離子,例如HC〇3-、HS〇3-、Ν(ν^α-等中之 一種或几種。本實施例使用之化學物質為鹽酸,從而使散熱鰭片1〇表面帶 負電,如第三圖所示。 步驟300 .對製備好之複數奈米碳管進行處理,使其一端帶上與所述第 一電性相反之第二電性之電荷。目前製備奈米碳管之方法主要有電弧放電 法、雷射消溶法以及化學氣相沈積法。前兩種方法一般用來生長粉體之奈 米碳管,很難生長出奈米碳管陣列或控制奈米碳管生長方向,而化學氣相 8 1317415 - 沈積法可以很谷易地控制奈米*反官生長方向。因此,於本實施例中,優選 地,使用化學氣相沈積法生長奈米碳管,而使複數奈米碳管一端帶電可採 ' 用高分子潤濕技術。 本實施例中’步驟300進一步包括以下步驟,如第六圖所示,使用化學 氣相沈積法於一矽基板32上垂直生長一奈米碳管30陣列。此奈米碳管3〇陣 列可通過控制化學氣相沈積反應之條件得到單壁奈米碳管陣列、雙壁奈米 碳管陣列、多壁奈米碳管陣列或上述奈米碳管混合陣列。並可通過反&時 間控制奈米碳管30陣列長度為〇.2〜10微米,由催化劑31厚度等反應參數控制 奈米碳管30陣列之管徑為〇.2~200奈米。本實施例生長之奈米碳管3〇障列為 單壁奈米碳管陣列,奈米碳管30長度為1微米,鲁徑為2奈米。 ~ 然後,利用高分子廳技術’使絲碳管3G-端麟上高分子,相關 技術内容可參閱文獻Chemical Physics Letters, 2001,Vol. 342, 265-271 -Reversible water-solubilization of single-walled carbon nanotube by polymer wrapping”。其具體實施方式包括:控制奈米碳管3〇陣列一端浸入聚合電解 質溶液33甲,使奈米碳管30陣列一端與聚合電解質分子34自域即使聚 合電解質分子34纏繞於奈米碳管3〇陣列一端,從而使奈米碳管瓣列一端 帶電。所述奈米碳管30陣列置於聚合電解質溶液33中時間為m24小時,本 實把例中為12’丨、時。若要提南自組裝速度,可加熱料電解勝液%或對 其施以超音波紐。聚合電解質可依官種類不同,分別帶貞電或正電, 籲Γ負電之,合電解質可為聚四苯乙稀硫酸納,帶正電之聚合電解質可為聚 ,化二稀苯基二甲基。本實關使用之聚合電解修液%躲氣化二烤 苯基二?基瓣液,聚合電㈣分子34為雜化二鮮基二甲基銘分子, 從而使奈米碳管一端帶正電,如第四圖所示。 將帶電之複數奈米碳管職溶財取出,即完成對奈/树管處理使其 帶電之步驟。 步驟4〇0 .將帶電之複數奈米碳管與帶電之複數散熱錄片一併置於一液 體中使帶電之複數絲碳管韻於帶電之複數散熱則表面上。本步驟 令首先將自組裝疋成之奈米碳管3〇降列小心刮下,使其與石夕基板32上之 催化劑31刀離,之後將奈米碳管3〇陣列予以適當研磨以分散,接著與帶電 9 1317415 之複數散熱鰭片10共同放置於一液體中,則奈米碳管30帶有正電荷一端即 會因靜電吸附之特性,自動垂直吸附於帶有負電荷之散熱鰭片1〇上,得到 散熱器1 ’如第五圖所示。所述液體可為水、乙醇、甲醇、乙喊、乙酸等之 -種或幾種之混合,本實關巾使職水。若要提高散_片触令來碳 管30之吸附速度,可加熱所述液體或對其進行超音波震盪’優選地,所述 加熱液體時’加熱溫度為40。090。<:。本實施例中,對所述液體進行了加熱, 加熱溫度為60。〇經過上述步驟,由於散熱鰭片表面帶電基本均勻以及微 觀粒子被靜電吸附之特性,所述複數奈米碳管3〇即彼此基本平行且垂直於 複數散熱鰭片10之表面,且相互間距基本相同。 、 Φ 本實施例提供之散熱器之製造方法,分別A熱韓片及奈米碳管進行 處理’使它們帶相反電性’利用靜電吸附使奈米碳管自動吸附至散熱藉片 表面上。本實施例避免了於散熱鰭片表面沈積催化劑等物質,從而不受散 熱韓片間距之影響,且由於奈米碳管垂直於散熱⑽片表面,使得奈米碳 管之縱向導熱特性得到最大限度發揮,此外,由於散熱韓片表面帶電均句 從而使得奈米碳管分佈均勻,使得散熱更加一致。 綜上所述,本發明確已符合發明專利之要件,爰依法提出專利申請。 惟’以上所述者僅為本發明之較佳實施方式,本發明之範圍並不以上述實 施方式為限’舉凡熟習本案技藝之人士援依本發明之精神所作之等效修飾 或變化,皆應涵蓋於以下申請專利範圍内。 ^ ®【目式帛單說明】 第-圖係本驗方案實補所提供之餘m造方法流程圖。 第二圖係本驗方案實施渐提供之尚未處理之散示意圖。 第三圖係本技術方案實施漸提供之經過處理之散熱則示責圖。 第四圖係本撕方案實施辦提供之經過處狀絲碳管示意圖β 第五圖係本技術方案實施例所提供之表面具有奈米碳管之散熱器 意圖。 第六圖係本技術方案實施例所提供之製備與處理奈米碳管之流程示魚 圖。 〜 【主要元件符號說明】 1317415 散熱器 1 散熱鰭片 10 底座 11 奈米碳管 30 催化劑 31 矽基板 32 聚合電解質溶液 33 聚合電解質分子 34 111317415 • IX. Description of the invention: • Technical field to which the invention pertains The present invention relates to a manufacturing method for a heat-dissipating heat sink, and a method for manufacturing a heat sink having a carbon nanotube. [Prior Art] In recent years, with the rapid development of the integration process of semiconductor devices, the degree of integration of semiconductor devices has become higher and higher, 'the size of the device has become smaller, and the demand for heat dissipation has become higher and higher. Has become an increasingly important issue. In order to meet this need, various heat dissipation methods such as wind shoulder cooling, water cooling auxiliary cooling, and heat pipe cooling are widely used, and a certain heat dissipation effect is obtained. The two most important heat transfer mechanisms in the heat sink are heat transfer and heat convection. Thermal conduction refers to the exchange of energy between molecules. Less energy? The quantity of the ship is obtained after contact with the innocent molecules (through physical contact). If there is no temperature difference between the two (such as a separate heat sink), heat transfer cannot be achieved. The heat conduction heat sink is the most important way to extract heat from the CPU. A conventional heat sink can add a thermal interface material with a high thermal conductivity between the heat sink and the heat source (semiconductor integrated device such as CPU), that is, TIM (Thermal Interface Material), so that the heat generated by the CPU can be more effectively Conducted to the heat sink. However, to reduce the temperature, thermal convection has a large impact. Thermal convection refers to the transfer of heat through the movement of matter from a heat source surrounded by a gas or liquid, and through the movement of molecules to achieve heat transfer. In the heat sink, the heat generated by the cpu is finally transmitted to the air through the heat dissipating pieces, and the fluid is taken away by the convection phenomenon. At present, most of the radiators use fans to dissipate heat by forced convection. The heat dissipation effect is related to the surface area of the heat sink, that is, the contact area between the fin and the air. The larger the heat exchange area, the better the heat dissipation effect. Generally, in the case of forced convection and limited space conditions, the radiator is designed to improve the design to increase the heat dissipation area. The radiators widely used today are mostly fin-type designs, and the fin-type radiators make the weight. And the heat dissipation area is quite ideal. The finned heat sinks currently on the market mainly include a long finned heat sink and a cylindrical Korean heat sink. Most of the long fin fin radiators are die-casting, which is a metal forming method in which the metal is melted at a high temperature and then pressed into a mold to cast a casting. The method is simple in process, and the heat-dissipating 1317415 sheets can be formed into various shapes according to different needs. However, such processing methods are constrained by the manufacturing of the art, and the heat-dissipation of the heat-dissipating pieces is small, resulting in a limitation on the heat-dissipating area. The cylindrical heat sink has a relatively large density due to its heat-dissipating tab and has a relatively high density. In addition, around the 眺-type fin, because the resistance of the fluid is small, the fluid material _', therefore, it is easy to take away the energy on the cylinder, and the effect of convection is enhanced, so in the slab of the same area, the cylindrical type The tabs will have a better heat transfer effect than the strips. However, cylindrical heat-dissipating sheets have higher requirements for making thewei art, and are more difficult to manufacture, and thus cost more. Moreover, although the density is longer and the strip size is larger, it is also limited by the limit. The increase of the __ step can only cover the entire heat sink fin volume. a Prior art provides a method of manufacturing a kind of deficient method. The method and method are used for heat dissipation, and the surface is chemically used, and the phase deposition method (4) m-tree tube _. However, the use of chemical vapor deposition to grow carbon nanotubes _ need to be on the surface of the dispersion - catalyzed, the degree of uniformity of the catalyst layer will affect the formation of the carbon nanotubes uniformity, and the current heat dissipation The spacing between the devices is small. 'Because of the smaller spacing, it is very difficult to deposit a uniform catalyst layer on the surface of the fins, which makes it difficult to grow a uniform array of carbon nanotubes on the surface of the fins, ultimately affecting the heat dissipation. effect. ° In view of the fact that it is not necessary to provide a uniform heat sink on the surface of the heat sink, it is necessary to manufacture a heat sink with a uniform carbon nanotube. [Contents] The following method will be used to form the remaining H of the carbon nanotubes. The Korean film table is a method for manufacturing a heat sink for providing the above-mentioned contents, which may include providing a plurality of heat dissipating fins; hui· treating the plurality of floating ship silk surfaces to have a first-heterogeneous charge on the surface thereof; The prepared carbon nanotubes are treated such that the ends thereof are charged with the second electrical charge; the electrical phase places the charged plurality of carbon nanotubes together with the charged plurality of heat dissipating fragments. In a liquid, a plurality of carbon nanotubes of π electricity are adsorbed on the surface of the charged plurality of sheets. The treatment of the surface of the heat dissipation fin is treated with a chemical substance. 1317415 . The chemical substance contains HC〇3—, hso3—, Ν〇3, and α—the riding chemical contains ΝΗ4+. ''In the 11' kind or several. The preparation method of the post-recovery complex nano tube includes chemical vapor deposition method, arc discharge method and thunder solution multi-faceted surface reduction and storage storage tube-move-polymerization electric coupling The polyelectrolyte solution is described as a polytetraphenylethylene sulfate solution. The polyelectrolyte solution is a polygasified diallyl dimethyl hydride electrode and a charged multiplicity of carbon nanotubes and is placed in a liquid process to heat or supersonicize the liquid. Shock. The heating temperature for heating the liquid is 40 to 9 〇 (3c. The liquid is a mixture of one or more of water, ethanol, methanol, acetamidine, acetic acid, etc.. The carbon nanotubes of one of the pure tubes have a length of 0.2 to 1 μm. The diameter of the carbon nanotubes is 0.2 to 200 nm. _ ^ rhyme in the transcript _>; The carbon tube is used for the heat dissipation of the Han Yue watch. The carbon nanotubes adsorbed on the surface of the plurality of heat dissipation fins are substantially the same in pitch. The prior art _ fresh gas her secret _ silk surface growth neat tube in the heat sink fin The surface of the sheet-catalyst layer, due to the influence of the gap between the sheets, is difficult to deposit on the surface of the sheet - uniform catalyst layer, resulting in the inability to disperse the carbon nanotubes on the surface of the sheet. Compared with the original, the manufacturing method for the heat dissipation H is static and simple, and the sub-distribution and the carbon tube processing are used to make them have opposite electrical properties, and the carbon nanotubes are electrostatically adsorbed. Automatically adsorbed onto the surface of the heat sink fins to avoid deposition of catalysts on the surface of the heat sink Quality, eliminate heat dissipation ^ 1317415 % • The influence of the spacing and because this method can make the plurality of carbon nanotubes perpendicular to the surface of the heat-dissipating surface, it can be used for the longitudinal hiding of the carbon nanotubes. In addition, due to the treatment The surface of the heat dissipating fins is uniformly charged, so that the carbon nanotubes are evenly distributed, so that the heat dissipation of the heat sink is more uniform. [Embodiment] The technical solution is further described in detail below with reference to the accompanying drawings. Please refer to the first figure, the technical solution The method for manufacturing a heat sink provided includes the following steps: providing a plurality of heat dissipating fins; treating the surface of the plurality of fins to have a first electrical charge on the surface; and preparing the plurality of carbon nanotubes Processing, having one end carrying a second electrical charge opposite to the first electrical property; placing the complex nanotube, carbon tube and the plurality of hot fins together in a liquid, so that The carbon nanotubes are adsorbed on the surface of the plurality of heat dissipating fins. The method for manufacturing the heat sink provided by the technical solution is described in detail in conjunction with the embodiments. Please refer to the first figure and refer to the second figure. The figure is as follows: Step 100: providing a plurality of heat dissipating fins 10, as shown in the second figure, wherein the fins 1 can be any shape of fins, which may be flat fins or The curved fins or the fins have both a flat section and a curved section, and the fins can further include a base 11 〇 - step 200. The surface of the fins 10 is processed to The surface is charged with a first electrical charge. The treatment method may be a chemical method or a physical method, preferably by chemical treatment, ie, charging the surface of the heat dissipation fin by chemical treatment, and the heat dissipation fin 10 generally processed by the method The surface charge is relatively uniform. The surface of the heat sink fin 10 can be positively or negatively charged by using different chemicals to treat the surface of the heat sink fin 10. To make the surface of the heat sink fin 10 positively charged, the chemical substance used should be With a cation such as NIV, if the surface of the fin is negatively charged, the chemical used should have an anion such as one or more of HC〇3-, HS〇3-, Ν(ν^α-, etc. . The chemical substance used in this embodiment is hydrochloric acid, so that the surface of the heat dissipating fin 1 is negatively charged, as shown in the third figure. Step 300. The prepared plurality of carbon nanotubes are treated such that one end carries a second electrical charge opposite to the first electrical property. At present, methods for preparing carbon nanotubes mainly include arc discharge method, laser desalination method, and chemical vapor deposition method. The first two methods are generally used to grow powdered carbon nanotubes. It is difficult to grow a carbon nanotube array or control the growth direction of the carbon nanotubes, while the chemical vapor phase 8 1317415 - deposition method can control the nai M* anti-official growth direction. Therefore, in the present embodiment, it is preferred to use a chemical vapor deposition method to grow a carbon nanotube, and to charge a plurality of carbon nanotubes at one end to employ a polymer wetting technique. The step 300 in this embodiment further includes the step of vertically growing an array of carbon nanotubes 30 on a substrate 32 using chemical vapor deposition as shown in the sixth figure. The carbon nanotube 3 array can be obtained by controlling the conditions of the chemical vapor deposition reaction to obtain a single-walled carbon nanotube array, a double-walled carbon nanotube array, a multi-walled carbon nanotube array or the above-described carbon nanotube hybrid array. The length of the array of carbon nanotubes 30 can be controlled by the inverse & time control to be 〇2 to 10 μm, and the diameter of the catalyst 31 is controlled by a reaction parameter such as the thickness of the catalyst 30. The diameter of the carbon nanotube 30 array is 〇. 2 to 200 nm. The carbon nanotubes 3 barriers grown in this example are listed as single-walled carbon nanotube arrays, and the carbon nanotubes 30 have a length of 1 micrometer and a ruin diameter of 2 nanometers. ~ Then, using the polymer hall technology to make the carbon fiber tube 3G-end of the polymer, the related technical content can refer to the literature Chemical Physics Letters, 2001, Vol. 342, 265-271 - Reversible water-solubilization of single-walled carbon The specific embodiment includes: controlling one end of the carbon nanotube 3 〇 array to be immersed in the polyelectrolyte solution 33A, so that one end of the array of the carbon nanotubes 30 and the polyelectrolyte molecule 34 are entangled with the polyelectrolyte molecule 34 from the domain. The carbon nanotubes are arranged at one end of the array to charge the carbon nanotubes at one end. The array of carbon nanotubes 30 is placed in the polyelectrolyte solution 33 for a period of 24 hours, which is 12' in the example. If you want to mention the self-assembly speed of the South, you can heat the material to win the liquid or apply it to the ultrasonic wave. The polyelectrolyte can be charged or positively charged according to the type of the official, respectively, and the electrolyte can be negatively charged. It is a polytetraphenylethylenesulfate sodium, and the positively charged polyelectrolyte can be a poly- and di-phenylene dimethyl group. The polymerized electrolytic repair liquid used in this practical use is a gas-filled di-baked phenyl di-base valve solution. The polymer (4) molecule 34 is a hybrid di- dimethyl dimethyl molecule, so that one end of the carbon nanotube is positively charged, as shown in the fourth figure. The charged carbon nanotubes are taken out, and the completion is completed. Step of treating the naphthalene/tree tube to electrify. Step 4〇0. Place the charged plurality of carbon nanotubes together with the charged plurality of heat-dissipating recording sheets in a liquid to make the charged plurality of carbon tubes have a plurality of charged carbon tubes The heat dissipation is on the surface. In this step, the self-assembled carbon nanotubes are first carefully scraped off, and the catalyst is separated from the catalyst 31 on the stone substrate 32, and then the carbon nanotubes are arrayed. Properly ground to disperse, and then placed in a liquid together with a plurality of heat-dissipating fins 10 charged 9 1317415, then the carbon nanotube 30 has a positive charge and is automatically adsorbed vertically with a negative adsorption characteristic. The heat sink fins of the electric charge 1 ,, the heat sink 1 ' is obtained as shown in the fifth figure. The liquid may be a mixture of water, ethanol, methanol, yoke, acetic acid, etc. To make the job water. If you want to increase the adsorption speed of the carbon tube 30 The liquid may be heated or ultrasonically oscillated. Preferably, the heating temperature is 40.090. <: In the present embodiment, the liquid is heated at a heating temperature of 60. After the above steps, the plurality of carbon nanotubes 3 are substantially parallel to each other and perpendicular to the surface of the plurality of heat dissipation fins 10, and are spaced apart from each other, because the surface of the heat dissipation fin is substantially uniformly charged and the microscopic particles are electrostatically adsorbed. Basically the same. Φ The manufacturing method of the heat sink provided in this embodiment, respectively, A hot Korean film and carbon nanotubes are treated to 'make them electrically opposite'. The carbon nanotubes are automatically adsorbed to the heat sink by electrostatic adsorption. On the surface. In this embodiment, the deposition of a catalyst and the like on the surface of the heat dissipation fin is avoided, thereby being unaffected by the spacing of the heat dissipation fins, and since the carbon nanotubes are perpendicular to the surface of the heat dissipation (10) sheet, the longitudinal heat conduction characteristics of the carbon nanotubes are maximized. In addition, due to the uniform heating of the surface of the heat-dissipating Korean film, the carbon nanotubes are evenly distributed, so that the heat dissipation is more uniform. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiments, and those skilled in the art will be able to make equivalent modifications or changes in accordance with the spirit of the present invention. It should be covered by the following patent application. ^ ® [Explanation of the vocabulary list] The first figure is a flow chart of the method of making the m provided by the actual scheme. The second figure is a schematic diagram of the unprocessed dispersal provided by the implementation of the test plan. The third figure is a representative map of the processed heat dissipation provided by the implementation of the technical solution. The fourth figure is a schematic diagram of the through-wire carbon tube provided by the implementation of the tearing solution. The fifth figure is intended to provide a heat sink for the surface of the carbon nanotube provided by the embodiment of the technical solution. The sixth figure is a flow chart showing the process of preparing and processing a carbon nanotube provided by the embodiment of the present technical solution. ~ [Main component symbol description] 1317415 Heat sink 1 Heat sink fin 10 Base 11 Carbon nanotube 30 Catalyst 31 Tantalum substrate 32 Polyelectrolyte solution 33 Polymer electrolyte molecule 34 11

Claims (1)

1317415 '十、申請專利範圍: • 1 —種散熱器之製造方法,其包括以下步驟: 提供複數散熱鰭片; 對所述複數散熱鰭片表面進行處理,使其表面帶第一電性之電荷; 對製備好之複數奈米碳管進行處理’使其一端帶上與所述第一電性相反 之第二電性之電荷; 將帶電之複數奈米碳管與帶電之複數散熱鰭片一併置於一液體中,使帶 電之複數奈米碳管吸附於帶電之複數散熱鰭片表面上。 2·如申請專利範圍第1項所述之散熱器之製造方法,其中:所述對散熱鰭 | 片表面進行處理係採用化學物質處理。 、 3. 如申請專利範圍第2項所述之散熱器之製造方法,其中:所述化學物質 含有HC〇r、HS〇r、ΝΟΓ或α-中之一種或幾種。 4. 如申請專利範圍第2項所述之散熱器之製造方法,其中:所述化學物質 含有ΝΗ4+〇 5. 如申請專利範圍第1項所述之散熱器之製造方法,其中:所述複數奈米 碳管之製備方法包括化學氣相沈積法、電弧放電法及雷射消熔法。 6. 如申請專利範圍第1項所述之散熱器之製造方法,其中:所述對製備好 之奈米碳管進行處理係將所述奈米碳管一端靜置於一聚合電解質溶液 中。 I 7.如申請專利範圍第6項所述之散熱器之製造方法,其中:於所述奈米碳 管一端靜置於一聚合電解質溶液過程中對所述聚合電解質溶液加熱或 進行超音波震蕩。 8. 如申請專利範圍第6項所述之散熱器之製造方法,其中:所述聚合電解 質溶液爲聚四苯乙烯硫酸鈉溶液。 9. 如申請專利範圍第6項所述之散熱器之製造方法,其中:所述聚合電解 質溶液爲聚氣化二烯丙基二甲基鋁溶液。 10. 如申請專利範圍第6項所述之散熱器之製造方法,其中:所述奈米碳管 一端靜置於一聚合電解質溶液中之時間為1至24小時。 11‘如申請專利範圍第1項所述之散熱器之製造方法,其中:於所述將帶電 12 1317415 之複數奈米碳管與帶電之複數散熱鰭片一併置於一液體過程中,對所述 液體進行加熱或進行超音波震蕩。 12. 如申請專利範圍第11項所述之散熱器之製造方法,其中:所述對液體進 行加熱之加熱溫度爲40~90eC。 13. 如申請專利範圍第1項所述之散熱器之製造方法,其中:所述液體為水、 乙醇、甲醇、***、乙酸之一種或幾種之混合。 14. 如申請專利範圍第1項所述之散熱器之製造方法,其中:所述奈米竣管 爲單壁奈米碳管、雙壁奈米碳管或多壁奈米碳管中之一種或&種之混 合。1317415 '10. Patent application scope: 1 - A method for manufacturing a heat sink, comprising the steps of: providing a plurality of heat dissipation fins; treating the surface of the plurality of heat dissipation fins to have a first electrical charge on the surface thereof Processing the prepared plurality of carbon nanotubes to have one end carrying a second electrical charge opposite to the first electrical property; and charging the plurality of carbon nanotubes with a plurality of charged fins And placed in a liquid, so that the charged plurality of carbon nanotubes are adsorbed on the surface of the plurality of charged fins. 2. The method of manufacturing a heat sink according to claim 1, wherein the surface of the heat sink fin is treated with a chemical substance. 3. The method of manufacturing a heat sink according to claim 2, wherein the chemical substance contains one or more of HC〇r, HS〇r, ΝΟΓ or α-. 4. The method of manufacturing a heat sink according to claim 2, wherein: the chemical substance contains ΝΗ4+〇5. The method of manufacturing the heat sink according to claim 1, wherein: The preparation method of the carbon nanotubes includes a chemical vapor deposition method, an arc discharge method, and a laser ablation method. 6. The method of manufacturing a heat sink according to claim 1, wherein the treating the prepared carbon nanotubes is performed by placing one end of the carbon nanotubes in a polyelectrolyte solution. The method for manufacturing a heat sink according to claim 6, wherein the polyelectrolyte solution is heated or ultrasonically oscillated while the one end of the carbon nanotube is placed in a polyelectrolyte solution. . 8. The method of manufacturing a heat sink according to claim 6, wherein the polymer electrolyte solution is a sodium polytetraphenylsulfate solution. 9. The method of manufacturing a heat sink according to claim 6, wherein the polymeric electrolyte solution is a polyvaporated diallyldimethylaluminum solution. 10. The method of manufacturing a heat sink according to claim 6, wherein the one end of the carbon nanotube is placed in a polyelectrolyte solution for a period of from 1 to 24 hours. The method for manufacturing a heat sink according to claim 1, wherein: the plurality of carbon nanotubes charged 12 1317415 are placed in a liquid process together with the plurality of charged fins. The liquid is heated or subjected to ultrasonic oscillation. 12. The method of manufacturing a heat sink according to claim 11, wherein the heating temperature for heating the liquid is 40 to 90 eC. 13. The method of manufacturing a heat sink according to claim 1, wherein the liquid is a mixture of one or more of water, ethanol, methanol, diethyl ether and acetic acid. 14. The method of manufacturing a heat sink according to claim 1, wherein the nanotube is a single-walled carbon nanotube, a double-walled carbon nanotube or a multi-walled carbon nanotube. Or a mixture of & 17. 18. 如申請專穩圍第1賴狀散抑之製造私,其巾:所述夺米破管 長度爲0.2~10微米。 如申請專利範31第1項所述之散熱器之製造方法,其巾:所述夺米碳管 之直徑爲0.2-200奈米。 2請專利範圍第旧所狀餘之製造方法,其巾:所述吸附於複 散熱則表面上之絲碳管彼辭行且垂直於散麟片表面。 數第1項所述之散熱器之製造方法’其中:所述吸附於複 |敢熱鰭片表面上之奈米碳管彼此間距基本相同。17. 18. If the application is to stabilize the manufacturing of the first squat, the towel: the length of the rice is 0.2 to 10 microns. The method for manufacturing a heat sink according to claim 31, wherein the carbon nanotube has a diameter of 0.2 to 200 nm. 2 Please refer to the manufacturing method of the old patent scope, the towel: the carbon carbon tube adsorbed on the surface of the heat dissipation is perpendicular to the surface of the slab. The method for manufacturing a heat sink according to Item 1, wherein the carbon nanotubes adsorbed on the surface of the heat sink fin are substantially the same in pitch. 1313
TW94124909A 2005-07-22 2005-07-22 Methed for manufacturing a heat sink TWI317415B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94124909A TWI317415B (en) 2005-07-22 2005-07-22 Methed for manufacturing a heat sink

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94124909A TWI317415B (en) 2005-07-22 2005-07-22 Methed for manufacturing a heat sink

Publications (2)

Publication Number Publication Date
TW200704909A TW200704909A (en) 2007-02-01
TWI317415B true TWI317415B (en) 2009-11-21

Family

ID=45073362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94124909A TWI317415B (en) 2005-07-22 2005-07-22 Methed for manufacturing a heat sink

Country Status (1)

Country Link
TW (1) TWI317415B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492003B2 (en) 2010-11-24 2013-07-23 Industrial Technology Research Institute Heat sinking element and method of treating a heat sinking element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492003B2 (en) 2010-11-24 2013-07-23 Industrial Technology Research Institute Heat sinking element and method of treating a heat sinking element

Also Published As

Publication number Publication date
TW200704909A (en) 2007-02-01

Similar Documents

Publication Publication Date Title
Dai et al. Multiscale structural modulation of anisotropic graphene framework for polymer composites achieving highly efficient thermal energy management
Yang et al. An ultrathin flexible 2D membrane based on single‐walled nanotube–MoS2 hybrid film for high‐performance solar steam generation
CN100358132C (en) Thermal interface material producing method
Gong et al. Recent progress in bionic condensate microdrop self‐propelling surfaces
Liu et al. Controllable growth of graphene on liquid surfaces
TWI463614B (en) On-chip temperature gradient minimization using carbon nanotube cooling structures with variable cooling capacityy
CN101626674B (en) Radiating structure and preparation method thereof
Zeinali Heris et al. Heat transfer performance of two-phase closed thermosyphon with oxidized CNT/water nanofluids
JP2011063506A (en) Method for producing graphene, graphene produced by the method, conductive thin film comprising the graphene, transparent electrode comprising the graphene, and radiating or heating device comprising the graphene
TW200530383A (en) Thermal interface material and methode for making same
CN101343532A (en) Method for preparing carbon nano-tube composite heat interfacial material
Zhou et al. An optimized graphene oxide self-assembly surface for significantly enhanced boiling heat transfer
WO2005029555A2 (en) Nanostructure augmentation of surfaces for enhanced thermal transfer
US20110186270A1 (en) Heat transfer device with anisotropic heat dissipating and absorption structures
US20190033007A1 (en) Carbon nanotube and graphene aerogel heat pipe wick
TWI317415B (en) Methed for manufacturing a heat sink
Kim et al. Thermal performance of carbon nanotube enhanced vapor chamber wicks
JP6202104B2 (en) Sheet-like structure, electronic device using the same, method for producing sheet-like structure, and method for producing electronic device
TWI503275B (en) Method of forming nano-flake graphitizing phase change material and thermal management matrix therefrom
Sezer et al. Enhanced nucleate boiling heat transfer on bubble-induced assembly of 3D porous interconnected graphene oxide/silver nanowire hybrid network
Liu et al. MXene-reduced graphene oxide sponge-based solar evaporators with integrated water-thermal management by anisotropic design
Zhou et al. Enhanced Phase‐Change Heat Transfer by Surface Wettability Control
CN100405587C (en) Radiator and its preparation method
CN107747130A (en) A kind of method that phthalocyanine monocrystal thin films are prepared in the grapheme modified substrate of copper film
Yuan et al. Pool boiling experimental investigation on in-situ hierarchical Cu (OH) 2 nanograss

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees