TWI312644B - Discharge produced plasma euv light source - Google Patents

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1312644 九、發明說明： t發明戶斤屬之技術領域3 發明領域 本發明有關利用電極之間放電形成發光電漿之EUV及 5 軟X射線光源。 相關申請案 此申請案係為下列各案的部分接續案，身為2003年3 > 月8日提交的美國編號10/384,967號的部分接續案之2003年 10 4月8日提交的美國編號10/409,254號、2002年7月3日提交的 美國編號10/189,824號、2002年4月10日提交的美國編號 10/120,655號、現為美國專利案6,586,757號之2001年6月6 曰提交的美國編號09/875,719號、及2001年6月6日提交的美 國編號09/875,721號、2000年1〇月16日提交的美國編號 15 09/690,084號；並請求2〇〇2年10月31日提交的專利申請案編 號60/422,808號及2002年1〇月18日提交的6〇/419,805號之利 _ 益，上述各案皆以引用方式併入本文中。 發明背景 已經热知自譬如藉由將一高電壓施加橫越電極產生放 20電所生成之電漿來產生遠紫外線(‘$11乂，，），譬如在一氣體媒 體譬如包含一諸如氙等主動材料中產生處於Euv波長的 光’言如I3.5奈米的氤（亦稱為軟父射線）。此等光源常 稱為放電產生的錢(“DPP，，)EUV(軟χ射線）光源。 1998年6月9日發證予帕特羅（part⑻的美國專利案 7 1312644 5,763,930號、2000年5月16日發證予帕特羅(1^扣〇)等人的美 國專利案6,064,072號、2002年9月17日發證予帕特羅(？&出〇) 等人的美國專利案6,452，199號、2003年4月1日發證予帕特 羅(Partlo)的美國專利案6,541,786號、及2003年7月1日發證 5 予摩林恰克(Melnychuck)等人的美國專利案6,586,757號，以 及審查中的美國專利申請案09/752,818號、2002年4月10曰 提交名稱為“用於遠紫外線及X光之脈衝功率系統，，之 10/120,655號，發明人奈思（Ness)等人,2002年11月7日公開， 公告號碼US/2002-0163313-A1、2002年7月3曰提交名稱為 10 “具有改良的脈衝功率系統之電漿聚焦光源，，之10/189,824 號，發明人摩林恰克（Melnychuck)等人，2003年1月9日公開， 公告號瑪US/2003-0006383-A1、2003年3月8日提交名稱為 “具有長壽命光學裝置之高功率深紫外線雷射，，之 10/384,967號，發明人亞格(Yager)等人、2003年4月8日提交 15名稱為“遠紫外光源”之1〇/4〇9,254號，發明人摩林恰克 (Melnychuck)等人；上述各案皆論及特別使用Dpp來生成用 於產生光的電漿之EUV光源的型態，上述各案的揭示以引 用方式併入本文中。 目前的EUV收集光學裝置係譬如在部分常見環境溫度 20下譬如藉由數個具有共同焦點的嵌套狀殼套所組成。一般 而5，這些殼套譬如由鎳形成，且強調具有譬如近似丨公厘 厚之相對較薄的壁。EUV光產生的結果係為接近EUV源點 之組件上的高熱負荷。在光學組件的案例中，這些熱負荷 言如會扭曲臨界表面使焦點移位。 1312644 一種很有效率之發送EUV光的方法譬如係經由“入射 的掠射角”反射器。一般而言，嵌套狀收集器殼套譬如強調 具有至少兩個不同的反射表面，譬如扁平或彎曲狀表面， 藉以能夠自放電產生的電漿以大角度發射光線使之以較小 5 的角度亦即數值孔徑被收集及輸送至一中間焦點或焦平 面。 避免扭曲及維持焦平面或焦點係為可採用部分改良之 EUV光源設計的一種型態。 電極壽命是另一項需要注意的EUV光源議題。具有 10 10%輸出劣化之100M擊發的電極壽命據信係為DPP EUV系 統的最低要求。目前的技術對於上述左右的劣化只允許約 小於30M左右的擊發。藉由一DPP產生的匝夾狀電漿之EUV 發光的副產品係為緊鄰匝夾形態之結構及元件上的高熱負 荷.。這會對於效能及組件壽命造成數種有害影響，譬如在 15 中央電極的案例中，熱負荷可能很嚴重以使電極外表面譬 如經由材料蒸發而過度侵蝕。由於包括了對於電漿形態的 影響及無法承受在電極結構内部流通的冷卻水壓力等數項 原因，因為侵蝕作用的緣故，最終必須更換這些電極。 此時，EUV電極的壽命係與微影業所引述的壽命數字 20 相差了一個數量級。因此，更換成本及電極更換期間的機 具停工構成了 DPP EUV光源之“擁有成本（cost of ownership)”的大部分。 已知將SiC-BN使用在國防工業作為裝曱鍍覆之用。摻 雜有BN的SiC對於譬如含有BN的塗覆纖維等SiC-石墨系統 1312644 很常見。TiW已經使用在半導體業的接觸部上且身為一種 常見的機械加工材料，譬如用於PVD靶材。 DPP EUV光源的另一重要考量在於：需要將由於放電 產生的電漿EUV光源衝擊在諸如收集器光學元件等系統光 5 學裝置上所造成之電極雜屑的有害影響予以顯著地降低。 DPP EUV光源的另一重要型態在於：需要最有效率地 使用注入DPP裝置内之能量藉以對於給定的能量輸入達成 最大的光輸出。需要極高能量的光輸出，而且譬如由於定 時及散熱需求故在諸如將極高能脈衝以所需要的重覆速率 10 輸送至放電電極之能力方面具有限制。 【發明内容】 發明概要 揭露一種DPP EUV源，其可包含一採用一金屬鹵素氣 體自離開電漿的雜屑產生一金屬鹵化物之雜屑消減裝置。 15 EUV源可具有一可包含複數個曲線型遮蔽構件之雜屑遮蔽 器，其中複數個曲線型遮蔽構件具有由對準於一焦點的光 通道所連接之内及外表面，該等遮蔽構件可與其間的開放 空間呈現交替且可具有在一旋轉軸線中形成一圓形且在另 一旋轉軸線中形成一橢圓形之表面。可對於電極供應一放 20 電脈衝且其經過定型以在放電的軸向跑出階段期間產生一 適度電流並在放電的徑向壓縮階段期間產生一峰值。光源 可包含一渦輪分子泵且其具有一連接至產生室之入口並可 操作以從室優先泵送比起緩衝氣體更多之源氣體。此源可 包含一經調整的導電電極，此導電電極包含：一經差異性摻 1312644 雜的陶瓷材料，其摻雜入一第一區中以至少選擇導電性以 及一第二區中以至少選擇導熱性。第一區可位於或接近於 _ 電極結構的外表面，且陶瓷材料可為SiC或氧化鋁，而摻雜 • 物為BN或一金屬氧化物包括SiO或Ti02。源部可包含一可 5 移式電極總成安裝座且可操作以將電極總成安裝座從一更 換位置移至一操作位置，其中可移式安裝座係位於一伸縮 節上。此源部可具有一溫度控制機構，其可操作性連接至 收集器且可操作用以調節各別殼套構件的溫度以維持一與 B 溫度有關的幾何結構而使得來自各別殼套構件之入射反射 10 的掠射角達到最佳化，或具有一用以定位殼套構件之機械 ***。可以一電壓使殼套偏壓。可利用偏離焦點的雷射 輻射來製造雜屑遮蔽器。可藉由一界定有兩個冷卻劑通道 之中空内部或界定有通道之多孔金屬來冷卻陽極。可利用 提供均勻分離與加強且不會阻絕顯著光量之互鎖籤片，藉 15 由附接至一安裝環或轂或附接至彼此之複數個大、中及小 型鰭片來形成雜屑遮蔽器。 •圖式簡單說明 第1圖顯示一放電產生的電漿EUV(軟X射線）光源及此 系統的一實施例之主要組件的示意圖； 20 第2圖顯示一用於產生DPP EUV光之電極的一實施例 之示意圖； 第3圖顯示一用於EUV光源之譬如適可自一光產生電 '漿收集一發射圓錐中的光之收集器系統的一實施例； 第4圖顯示示意第3圖所示的一收集器的實施例之入射 11 1312644 操作的掠射角之橫剖視圖； 第5圖顯示本發明的一實施例，其包括根據本發明的一 實施例之一電極更換系統； 第6圖顯示第4圖的實施例之近寫圖； 5 第7圖顯示第5及6圖的實施例，其中具有一適於更換電 極之閘閥密封機構； 第8圖顯示根據本發明的一實施例之一用來製造可有 效用於DPP之電極中的材料之程序的示意圖； 第9圖顯示根據本發明的一實施例之一中心電極（陽極） 10 的橫剖視圖； 第10圖顯示根據本發明的一實施例之一電極總成的立 體剖切圖； 第11圖顯示第10圖所示的電極總成的一部分及第9圖 所示的中心電極（陽極)之近寫立體剖切圖； 15 第12圖顯示第10及11圖所示的電極總成之俯視圖； 第12a至c圖顯示第10至12圖的電極總成之橫剖視圖， 其中剖面沿著第12圖的線A-A、B-B及C-C所取； 第13圖顯示第10至12c圖的電極總成之橫剖視圖，其中 包括一中心電極（陽極)總成； 20 第14圖顯示第10至13圖的總成之一冷板部分，其中顯 示根據本發明的一實施例之冷卻通路； 第15圖顯示根據本發明的一實施例之一雜屑遮蔽器的 立體圖； 第16圖顯示根據本發明的一實施例之一用於製造雜屑 12 1312644 遮蔽器的程序之示意圖； 第17A至Η圖顯示根據本發明的一實施例之另一雜屑 '遮蔽器；及 •第18Α及18Β圖顯示根據本發明的一實施例的型態產 5 生一電漿匝夾之模擬模型。 L實方包方式U 較佳實施例之詳細說明 現在參照第1圖，顯示根據本發明的一實施例之一放電 •產生的電漿（“DPP”)EUV及軟X射線光源20。EUV光源可譬 10 如包括一殼體22，其界定一放電室24。譬如可將一對電極 26譬如附接經過室22的一個壁中之一密封開口，該對電極 26譬如可包括概呈圓柱形的電極，譬如包括一譬如可能身 為陰極之外電極28，及一譬如可身為陽極之内電極30，或 反之亦然，但本揭示將採用前述方式。内電極30可如第2圖 15 所示譬如藉由一絕緣體70與外電極28絕緣，並當譬如第7圖 所示從一固態脈衝功率模組139供應一很高電壓及一很快 > 升高時間的電能脈衝時，其譬如將經由一譬如含有氦等離 子化氣體在電極28、30之間共同產生一放電。譬如第10至 12圖所示，可藉由一預離子化器206的啟動來利於此放電。 20 此放電譬如可初步形成一自接近預離子化器206及絕緣體 70的内電極概呈徑向延伸之磁場，如第2圖的82所示，然後 當沿著内電極（陽極)30的外表面208發送時更為轴向延伸， • 如第2圖的84所示意顯示。軸向延伸的磁場84係形成一由包 含一譬如氙等源材料的磁場84簡短地限定之高密度電漿匝 13 1312644 材枓S如係經由一源輸送管6 譬如輸it至φ、、μ:Λ4± 職夾部位且 主中l電極30梢部之一中心電 内。 甩極（％極）梢凹陷34 自电漿阻夾所發射的光在穿過譬如— 10 15 20 譬如會料收集㈣中的反射表面之諸如^產生=能 間自電渡發射的離子化氣粒子等雜屬或諸如來自:期 雜屑等f極材料_ 4 « H %之後可由譬〜 '鹤 器4〇的掠射角予以收集。收集器4〇所聚焦之光亦 過一頻譜純度濾器，其中收集㈣所聚焦的光⑼I 身為對於-稱為中間焦點42的焦點或焦平面之二射反= 掠射角所造成EUV光的單-彎曲表面反射射線 产 遽器可操作以祕譬如具有13.5奈米與135 頻寬除外之大致所有的光。 石孕又乍 本發明的一實施例之一型態係包含可 ,^ ^ 南该收集器40上 的熱負何，藉以產生輸送至中間焦點42 ® 一 曰 ^ 致的高EUV能 〇 現在參照第3及4圖，顯示根據本發明 ―― —貫施例之一 收集器40的立體剖切圖’亦顯示根據本發明的 — x 的—貫施例之 收集器40的一範例之示意圖。如第4圖所干 ’ 一條用於追縱 部分示範性限制射線之射線係具有一限制射緣丨 制射線1〇4,刪成為可在入射的掠射角將：:身： 104、1〇4,自部分102a反射至部分i〇2b，龙由 '、中收集器40的各 殼套102具有一第一殼套部分l〇2a及—諸 第一殼套部分 l〇2b，且各部分l〇2a、l〇2b可為扁平或彎曲 萌队。在部分l〇2b 14 1312644 上，入射反射的掠射角將射線104、104’中的光往中間焦點 42聚焦。對於此應用來說，可將光加寬且需要穿過一某種 濾器，譬如第1圖所示的頻譜純度濾器50。如第4圖所示， 只存在極小的體積亦即實體空間來支持各別殼套102及包 5 括其組件部分102a、102b的厚度。如此將會阻礙相鄰的譬 如下一個外殼套之傳輸。藉由修改殼套的幾何結構，可讓 更厚的壁增大各別的掠射角，故降低了設計的傳輸效率。 譬如，依據所發射光的波長λ及反射表面材料而定，部分 光射線104”及104”’並不進入收集器40的進入圓錐或在一適 10 當的入射掠射角（通常小於約2°)時不進入，因此不被收集器 所收集。 如第3圖所示，收集器40可由複數個嵌套狀殼套102所 構成，各殼套102具有比其另一外側殼套更小的直徑。殼套 可由複數個部分構成，譬如兩部分102a及102b，其中部分 15 102a最接近匝夾部位32。譬如可將各殼套102部分102a定出 角度，以反射入射在收集器40殼套102上之電漿產生的光之 入射圓錐的一部分中之光射線並將該光反射至該部分 102b。在部分102b上，可發生進一步的入射反射掠射角， 其譬如可以一聚焦在中間焦點42的角度來反射入射的EUV 20 光。 殼套102譬如可安裝至一收集器轂90,收集器轂90譬如 可能具有自轂90沿著收集器40軸向長度延伸之收集器轂延 伸部92。複數個譬如四個徑向支架94亦附接至轂90。可譬 如利用熔接或硬銲將各殼套]02連接至支架94。可藉由一徑 15 1312644 向收集窃減阻物100來強化收集器40的結構及殼套1〇2對方〜 支架94之安裝方式。 根據本發明的一實施例之一型態，可獲得收集器4〇可 能預期看到的最大熱負荷。收集器4〇的幾何結構及其組成 5殼套102與其部分102a、1〇2b的生成方式可使得譬如只在此 溫度達成譬如焦點等所需要性能之一型態。亦即，在部分 已知的預選定溫度下，將具有一已知之收集器元件的幾何 結構，導致一所需要的操作參數，譬如特定的；1等中間焦 點42之焦點選擇。加熱元件(未圖示）可附接至收集器4〇的各 10別殼套102或譬如附接至較9〇及/或其延伸部％，且譬如不 論具有原本會導致收集器4〇溫度隨時間而改變之何種任務 循環或重覆速率皆可用來維持此理想的幾何結構。此變動 的溫度譬如會使殼套部分1〇2a、職撓曲及/或修改其彼此 的位置關係。根據本發明的一實施例之另一型態，可利用 15冷卻來維持所需要的固定溫度，譬如其中包括帕耳帖冷卻 器（未圖示）而非加熱器元件，諸如克里申（Kryotherm)所製 造的一型Drift 0.8(40平方公厘）172瓦特。 任一情形下，收集器殼套102皆可配備有生物形態壓電 致動器，諸如費希克儀器（Phy sik Instrumente)所製造之一型 20 PU22'140系列，其譬如可藉由硬銲結合至各殼套部分 102a、l〇2b的外表面。將一電壓施加至壓電致動器譬如將 會扭曲殼套部分1〇2a、102b，故實質地更改殼套102的焦 點’譬如更改至中間焦點42。 根據本發明的一實施例之一型態，各殼套丨〇2譬如可具 16 1312644 有兩個離散部分l〇2a、102b，部分102a、102b各具有其本 身對於另一者及對於轂90之曲率及/或角度關係。可譬如藉 由沿著光軸更改兩半部102a、102b之間的關係來維持焦、 點。可譬如依據動作需求程度譬如利用定位馬達（未圖 5 或壓電元件（未圖示）來達成此作用。可譬如經由一伸縮節 (未圖示）聯結至殼套1〇2之操縱器（未圖示）藉以將馬達或壞 電元件譬如安裝在真空環境外部。殼套102則譬如可在接合 部106上譬如藉由一不會阻礙顯著光量透射過收集器之細 連接構件加以互連，所以譬如利用一如上述的致動器對於 10最外部殼套102上譬如接合部106之操縱將可具有同時操縱 所有殼套102之作用。 根據本發明的一實施例之另一型態，由於能夠快速更 換電極，故可使電極壽命變成“擁有成本，，的議題。可嬖如 利用如第5至7圖所示之一快速電極更換總成來達成此作 15 用。 根據本發明的另一實施例，由於偏壓電壓譬如來自於 殼套102的反射表面且譬如朝向經粗化表面，殼套可連 接至一偏壓電壓（未圖示）以使同極性的帶電離子偏向，以供 收集雜屑用。 20 在此時’ EUV電極壽命係錢影業㈣述的壽命數字 相差了-個數量級。因此，更換成本及料更換期間的機 具停工構成了 DPP EUV狀“擁有成本，，的切份。電極％ 定位在-亦可譬如容納有收集光學裝置4Q、頻·㈣器 50、雜輕件32等之大型真空室24内。藉由打斷真空室以 17 1312644 上的密封以譬如接達電極26，將可链 環谙異♦认辟l S如使真空室24的内部 f兄暴路於言如濕度、不乾淨等周遭房室 釋放時’紐至操作條件之時間將 ” "至 (影響擁右# 士、B + 场^也影響整體性能 ^響擁有成本u亦可能因為暴露 蒸氣附接至室的内㈣很困難。。錢使雜屬及水 即使在一完美環境中，對於給 4 需要的光學組件所必須具有的容積 慮到合納所 係為5到1。分鐘左右。可譬如藉由添加額外::直:除時間 成更快的泵除時間，但依據所選 u泵來達 10 15 20 $30KMls芏方4 主式各需要近似$20至 、者成本。然而，可能經由將困在室24内之水蒸氣 予以泵除來消除重要的停工時間因素。 …、；、 -實關之_型態’譬如藉由添加一與 =極26相鄰之經密封凸緣，將不再需要使容器通氣及重新 岔封之後進行後續的泵除。然而，此位置對於此-經密封 凸緣的位置是不利的。基於需要，必須將收集光學裝置 4〇(因此包括雜輕件坤定位成為緊鄰難夾32點。此外， 緊鄰阻夾32之區域譬如會受到超過細叱的溫度，或亦易 受到發光期間自電極2 6表面蒸發的金屬所“罐，。根據本 發明的-實施例之-型態，因此，可藉由採用—伸縮節m 來譬如增大電極26梢部與譬如雜屑阻件36等第-光學组件 之間的距離’藉以#如觀更換電㈣。此伸縮節122亦可 對於下列項目具有部分功用：申請人已觀察到會變動之阻 夾32位置的光學對準（譬如由於重覆速率及氣體混合物）、以 及對於收集光學裝置之熱效應（譬如收集器4G的撓曲），其影 18 1312644 茂漏且將室充填乾燥氮氣以防止形成水蒸氣及周遭 含的雜屑入侵。 &斤 EUV光源20的元件可能相當大且因而相當重。真空办 器22的個別段可能重量超過4〇〇傍。根據本發明的一實= 之一型態，藉由將各模組譬如真空容器22段麟電: 32/DPP換向器14G獨立安裝在—組共同的線性執（未 上，能夠將這些段解除栓鎖及滑開以如第7圖所示供服務) =。線性執譬如可在電極更換過程中的重新組裝期間提供 谷易操作模組及對準之雙重用途。 10 15 20 根據本發明的-實施例一型態，必須小心考量用 極26的材料，並對於其製造技術與其特定結構型態考岸到 ==須在其中運作之惡劣環境，特別是必須容_ 性與熱性負荷。碳化石夕SlC為根據本發明的—實施例之 具有有利性質之材料的範例，其中譬如針對高導献 性來調整S1C。亦可藉由添加特定财火性雜f來改變二: 為耐火金m物喊的此種材料及_材料之導電性 如下文更詳細地描述。 除了調整Sic及類似材料外，譬如亦可藉由添加馨如二 氧化鈦來輕氧㈣、二氧她_2)的導魏。所產生= 傳導性經摻雜陶究譬如比起任何金屬能夠更好地承受噴機 相害及熱損害。此外，欽鎮（Tiw)陶究金屬組合物 (“c⑽他”)亦可能具有類似SiC及相關材料的效用。咖具 有傳導性且不需要金屬摻雜來產生導電性，然而，其擁 更有限的導熱性。如果藉由真空熱麗產生，TiW機具可良 20 1312644 好地且最適合地使用於根據本發明的一實施例之型態。二 氧化鋁-氧化鈦、氧化鋁-二氡化鈦(A1N_Ti02)系統亦可對於 低溫系統具有效用。 申請人已經發現，金屬電極2 6，特別是内電極（陽極)3 〇 5極易傾向於在電極26表面特別是匝夾32附近處亦即陽極3〇 上產生融化及/或燒蝕。由於申請人觀察到對於所使用電極 26表面之損害，故暗示匝夾32中所形成的電漿會將顯著熱 能及離子能傳遞至電極26表面上，特別是陽極3〇上。即使 鎢钍(W-Th)合金亦譬如約在3500。κ呈現融化且容易噴濺。 10 共價材料傾向於電性絕緣且更能抵抗離子性損害。可 針對導電性及導熱性來調整一諸如Sic或氧化鋁等經摻雜 的陶瓷。譬如摻雜有BN的SiC將在2700。K分解，且可經過 改質而具有接近純鋁的導熱性。Sic中的BN摻雜程度可能 咼達30%重量。因為抗熱衝擊性的趨勢與材料導熱性、強 15度及斷裂韌性成正比且與膨脹係數成反比，SiC-BN複合物 可表現出極尚的抗熱衝擊性。氧化紹的抗熱衝擊性為2〇〇。匸 (△T°C) ’具有譬如30%的BN摻雜之BN_Sic複合物表現出 630至 120(TC (△!"(：)。 因為可能具有不當的陶瓷的體塊傳導性，可調整接近 20電極26表面之導電性。至於氧化鋁材料，可藉由金屬氧化 物摻雜（SnO、Ti〇2)來增強表面傳導性而不會顯著地負面改 變材料的其他有利性質。 可以許多方式來合成SiC-BN或氧化鋁-二氧化鈦系 統。可對於混合的源粉末使用電漿喷灑或液體相燒結。可 21 1312644 t改諸如心以在Kauai所用之一種經顆粒增強的CVD成長 私序，藉以求得最佳的材料密度且其對於不會龜裂或*** 的電極來說很重要。基於可取得的文獻及資訊，譬如請見 ·1312644 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to EUV and 5 soft X-ray sources that utilize the discharge between electrodes to form luminescent plasma. Related Application This application is a partial succession of the following cases. It is the US number submitted on April 8, 2003, as part of the US serial number 10/384,967 submitted on March 8, 2003. US No. 10/189,824 filed on July 3, 2002, US number 10/120,655 filed on April 10, 2002, and US Patent No. 6,586,757, filed June 6, 2001 US number 09/875,719, and US number 09/875,721 submitted on June 6, 2001, and US number 15 09/690,084 submitted on January 16, 2000; and requested October 2nd, 2nd October The patent application No. 60/422,808 filed on the 31st and the benefit of 6〇/419,805, filed on January 18, 2002, are hereby incorporated by reference. BACKGROUND OF THE INVENTION It has been known to generate far ultraviolet rays ('$11乂,)) by applying a high voltage across a electrode to produce a plasma generated by discharging electricity, such as in a gas medium, for example, including an active such as a sputum. The light at the Euv wavelength is produced in the material, such as I3.5 nm (also known as soft parent ray). These light sources are often referred to as discharge-generated money ("DPP,") EUV (soft ray-ray) sources. Issued on June 9, 1998, Patro (part(8), US Patent No. 7 1312644 5,763,930, 2000 5 U.S. Patent No. 6,064,072 issued to Patro et al. on June 16 and U.S. Patent No. 6,452 issued on September 17, 2002 to Patro (? & , No. 199, US Patent No. 6,541,786 issued to Partlo on April 1, 2003, and US Patent No. 5 issued to July 1, 2003 to Melnychuck et al. US Patent No. 6,586,757, and US Patent Application No. 09/752,818, filed on April 10, 2002, entitled "Pulse Power System for Far Ultraviolet and X-Ray, No. 10/120, 655, Inventor Ness ( Ness) et al., published on November 7, 2002, Announcement No. US/2002-0163313-A1, July 3, 2002, submitted a name for the plasma-focusing light source with an improved pulse power system, 10/ No. 189,824, inventor Melnychuck et al., published on January 9, 2003, Announcement No. US/2003-0006383-A1, March 8, 2003 The name is "High-power deep-ultraviolet laser with long-life optical device, 10/384,967, inventor Yager, et al., submitted on April 8, 2003, 15 as "far ultraviolet light source" 1〇/4〇9,254, inventor Melnychuck et al; all of the above cases deal with the type of EUV light source that uses Dpp to generate plasma for light, the disclosure of each case This is incorporated herein by reference. The current EUV collection optics are, for example, at some common ambient temperatures of 20, such as by a plurality of nested shells having a common focus. Typically, 5, such as nickel Formed with emphasis on relatively thin walls that are approximately 丨 mm thick. EUV light produces a high thermal load on components close to the EUV source point. In the case of optical components, these heat loads are distorted The critical surface shifts the focus. 1312644 A very efficient method of transmitting EUV light, such as via an "incident grazing angle" reflector. In general, a nested collector casing, for example, has at least two different anti- A surface, such as a flat or curved surface, whereby the plasma generated by self-discharge emits light at a large angle to be collected and transported to an intermediate focus or focal plane at a smaller angle of 5, ie, a numerical aperture. Maintaining the focal plane or focus is a type of design that can be designed with a partially modified EUV source. Electrode lifetime is another topic of EUV light source that needs attention. The electrode life of a 100 M shot with 10 10% output degradation is believed to be the minimum requirement for the DPP EUV system. The current technology allows only about 30 M or so of firing for the above-mentioned left and right degradation. The by-product of the EUV luminescence of the 匝-like plasma produced by a DPP is the high thermal load on the structure and components of the 形态 clip form. This can have several deleterious effects on performance and component life. For example, in the case of a 15 center electrode, the thermal load can be severe enough to cause excessive erosion of the outer surface of the electrode, such as through evaporation of the material. Due to several factors including the influence on the morphology of the plasma and the inability to withstand the pressure of the cooling water circulating inside the electrode structure, these electrodes must eventually be replaced due to the erosion. At this time, the life of the EUV electrode is an order of magnitude different from the life number 20 quoted by the microfilm industry. Therefore, replacement costs and machine downtime during electrode replacement constitute the bulk of the “cost of ownership” of the DPP EUV source. It is known to use SiC-BN in the defense industry as a plated coating. SiC doped with BN is common for SiC-graphite systems 1312644 such as coated fibers containing BN. TiW has been used in the semiconductor industry as a common machining material, such as for PVD targets. Another important consideration for DPP EUV sources is the need to significantly reduce the deleterious effects of electrode dust caused by the plasma EUV source generated by the discharge on system light devices such as collector optics. Another important aspect of the DPP EUV source is the need to use the energy injected into the DPP device most efficiently to achieve maximum light output for a given energy input. Extremely high energy light output is required, and there is a limit, for example, due to timing and heat dissipation requirements, such as the ability to deliver very high energy pulses to the discharge electrode at the desired repetition rate 10. SUMMARY OF THE INVENTION A DPP EUV source is disclosed that can include a debris abatement device that produces a metal halide from debris exiting the plasma using a metal halide gas. The EUV source may have a debris shutter that may include a plurality of curved shielding members, wherein the plurality of curved shielding members have inner and outer surfaces connected by optical channels aligned to a focus, and the shielding members may The open space with it alternates and may have a circular shape formed in one axis of rotation and an elliptical surface formed in the other axis of rotation. A 20 electrical pulse can be applied to the electrode and it is shaped to produce a moderate current during the axial run-out phase of the discharge and a peak during the radial compression phase of the discharge. The light source can include a turbomolecular pump and has an inlet connected to the generating chamber and operable to preferentially pump more source gases from the chamber than the buffer gas. The source may include an adjusted conductive electrode comprising: a differentially doped 1312644-doped ceramic material doped into a first region to select at least conductivity and a second region to select at least thermal conductivity . The first zone may be located at or near the outer surface of the _ electrode structure, and the ceramic material may be SiC or alumina, and the dopant may be BN or a metal oxide including SiO or TiO 2 . The source portion can include a shiftable electrode assembly mount and is operable to move the electrode assembly mount from a change position to an operative position, wherein the moveable mount is located on a telescoping joint. The source portion can have a temperature control mechanism operatively coupled to the collector and operable to adjust the temperature of the respective jacket member to maintain a B-temperature dependent geometry such that the individual housing members are The grazing angle of the incident reflection 10 is optimized or has a mechanical positioner for positioning the casing member. The sleeve can be biased at a voltage. A debris shutter can be fabricated using off-focus laser radiation. The anode can be cooled by a hollow interior defining two coolant passages or a porous metal defining a passage. An interlocking signature that provides uniform separation and reinforcement without blocking significant amounts of light can be utilized to form a debris shield by a plurality of large, medium, and small fins attached to a mounting ring or hub or attached to each other. Device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a plasma EUV (soft X-ray) light source generated by a discharge and a main assembly of an embodiment of the system; 20 Fig. 2 shows an electrode for generating DPP EUV light. A schematic diagram of an embodiment; FIG. 3 shows an embodiment of a collector system for EUV light source, such as light that collects light from an emission cone from a light-generating plasma; Figure 4 shows a schematic view of Figure 3. A cross-sectional view of the glancing angle of the incident 11 1312644 operation of an embodiment of a collector shown; FIG. 5 shows an embodiment of the present invention including an electrode exchange system in accordance with an embodiment of the present invention; The figure shows a near-figure of the embodiment of Fig. 4; 5 Fig. 7 shows an embodiment of Figs. 5 and 6, in which there is a gate valve sealing mechanism adapted to replace the electrode; and Fig. 8 shows an embodiment in accordance with the present invention. A schematic diagram of a procedure for fabricating materials useful in electrodes of DPP; FIG. 9 shows a cross-sectional view of a center electrode (anode) 10 in accordance with an embodiment of the present invention; An embodiment A perspective cutaway view of an electrode assembly; Fig. 11 shows a close-up perspective view of a portion of the electrode assembly shown in Fig. 10 and a center electrode (anode) shown in Fig. 9; 15 Fig. 12 shows a top view of the electrode assembly shown in Figs. 10 and 11; and Figs. 12a to c are cross-sectional views showing the electrode assembly of Figs. 10 to 12, wherein the cross section is taken along lines AA, BB, and CC of Fig. 12; Figure 13 is a cross-sectional view showing the electrode assembly of Figures 10 to 12c, including a center electrode (anode) assembly; 20 Figure 14 shows one of the cold plate portions of the assembly of Figures 10 to 13, wherein the display is based on A cooling passage according to an embodiment of the present invention; Fig. 15 is a perspective view showing a debris shutter according to an embodiment of the present invention; and Fig. 16 is a view showing one of the embodiments of the present invention for manufacturing debris 12 1312644 Schematic diagram of the procedure of the shutter; FIGS. 17A to 19 show another chip 'shader according to an embodiment of the present invention; and FIGS. 18 and 18 are diagrams showing a type of production according to an embodiment of the present invention. A simulation model of a plasma clamp. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE PREFERRED EMBODIMENT Referring now to Figure 1, there is shown a plasma generated ("DPP") EUV and soft X-ray source 20 in accordance with one embodiment of the present invention. The EUV light source 譬 10 includes a housing 22 that defines a discharge chamber 24. For example, a pair of electrodes 26 may be sealed, for example, by sealing one of the walls of chamber 22, which may, for example, comprise a substantially cylindrical electrode, such as including an electrode 28, such as may be a cathode, and For example, the inner electrode 30 can be an anode, or vice versa, but the present disclosure will employ the foregoing. The inner electrode 30 can be insulated from the outer electrode 28 by an insulator 70 as shown in Fig. 2, and supplied with a very high voltage from a solid pulse power module 139 as shown in Fig. 7 and soon. When the time-pulse energy pulse is raised, it will, for example, generate a discharge between the electrodes 28, 30 via a plasma such as helium. For example, as shown in Figures 10 through 12, the discharge can be facilitated by activation of a pre-ionizer 206. 20 such a discharge can initially form a magnetic field extending substantially radially from the inner electrode of the pre-ionizer 206 and the insulator 70, as shown by 82 in FIG. 2, and then along the inner electrode (anode) 30. Surface 208 is more axially extended when transmitted, • as indicated at 84 in Figure 2. The axially extending magnetic field 84 forms a high-density plasma 匝 13 1312644 which is defined by a magnetic field 84 containing a source material such as ruthenium. The material 枓 S is passed through a source transport tube 6 such as input to φ, μ : Λ 4± The position of the clip and one of the main electrodes of the tip of the electrode 13 is in the center. The bungee (% pole) tip depression 34 is emitted from the plasma resisting clip by passing through an ionized gas such as the generated surface of the reflective surface in the collection (4). Miscellaneous particles such as particles or f-pole materials such as from the beginning of the period _ 4 « H % can be collected by the grazing angle of 譬 ~ 'heger 4 〇. The light focused by the collector 4 is also passed through a spectral purity filter in which (4) the focused light (9) I is collected as EUV light caused by the inversion of the focal point or the focal plane of the intermediate focus 42. The single-curved surface reflected beam generator is operable with the secret of substantially all of the light except for the 13.5 nm and 135 bandwidths. A form of an embodiment of the present invention includes a heat source on the collector 40, thereby generating a high EUV energy delivered to the intermediate focus 42 ® Figures 3 and 4 show a schematic view of an example of a collector 40 of the embodiment of the present invention in accordance with the present invention, in accordance with the present invention, a perspective cutaway view of one of the collectors 40. As shown in Figure 4, a ray system for tracking some exemplary restricted rays has a limiting edge 丨1 〇4, which is deleted into a grazing angle that can be incident:: Body: 104, 1〇 4, reflected from the portion 102a to the portion i〇2b, each of the shells 102 of the ', middle collector 40 has a first casing portion 102a and a first casing portion 10b, and portions L〇2a, l〇2b can be flat or curved. On the portion l〇2b 14 1312644, the grazing angle of the incident reflection focuses the light in the rays 104, 104' toward the intermediate focus 42. For this application, the light can be broadened and passed through a filter such as the spectral purity filter 50 shown in Figure 1. As shown in Fig. 4, there is only a very small volume, i.e., physical space, to support the thickness of each of the casings 102 and the package portions 102a, 102b. This will hinder the transmission of the adjacent casing as follows. By modifying the geometry of the casing, thicker walls can be used to increase the individual glancing angles, thus reducing the transmission efficiency of the design. For example, depending on the wavelength λ of the emitted light and the reflective surface material, portions of the light rays 104" and 104"' do not enter the entry cone of the collector 40 or an incident grazing angle of at least 10 (typically less than about 2). °) does not enter, so it is not collected by the collector. As shown in Fig. 3, the collector 40 can be constructed from a plurality of nested casings 102, each having a smaller diameter than the other outer casing. The casing may be formed by a plurality of sections, such as two sections 102a and 102b, wherein portion 15 102a is closest to the jaw portion 32. For example, each of the casing 102 portions 102a can be angled to reflect the light rays in a portion of the incident cone of light generated by the plasma incident on the casing 102 of the collector 40 and reflect the light to the portion 102b. On portion 102b, a further incident reflection glancing angle can occur, which can, for example, focus at the angle of intermediate focus 42 to reflect incident EUV 20 light. The casing 102 can be mounted, for example, to a collector hub 90, such as a collector hub extension 92 that may extend from the hub 90 along the axial length of the collector 40. A plurality of, for example, four radial brackets 94 are also attached to the hub 90. For example, each shell]02 can be connected to the bracket 94 by welding or brazing. The structure of the collector 40 and the mounting manner of the casing 1〇2 to the bracket 94 can be enhanced by collecting the smashing resistance 100 from a path 15 1312644. According to one aspect of an embodiment of the invention, the maximum thermal load that the collector 4 can expect to see is obtained. The geometry of the collector 4 and its composition 5 The shell 102 and its portions 102a, 1〇2b can be generated in such a way that, for example, only one of the properties required for the focus, such as focus, is achieved at this temperature. That is, at some known preselected temperatures, there will be a known geometry of the collector elements resulting in a desired operating parameter, such as a particular focus of the intermediate focal point 42 of 1; A heating element (not shown) may be attached to each of the 10 jackets 102 of the collector 4 or, for example, to the -9 and/or its extensions, and for example, regardless of the temperature of the collector 4 Which task cycle or repetition rate changes over time can be used to maintain this ideal geometry. This varying temperature may, for example, cause the jacket portions 1〇2a to flex and/or modify their positional relationship with each other. According to another version of an embodiment of the invention, 15 cooling can be utilized to maintain the desired fixed temperature, such as including a Peltier cooler (not shown) instead of a heater element, such as Kryotherm. A type of Drift 0.8 (40 mm ^ 2 ) made of 172 watts. In either case, the collector casing 102 can be equipped with a biomorphic piezoelectric actuator, such as the Model 20 PU22'140 series manufactured by Physik Instrumente, which can be brazed, for example. It is bonded to the outer surfaces of the respective sheath portions 102a, 102b. Applying a voltage to the piezoelectric actuator, for example, will distort the casing portions 1〇2a, 102b, thereby substantially altering the focal point of the casing 102, e.g., to the intermediate focus 42. According to one aspect of an embodiment of the invention, each of the casings 2, for example, can have 16 1312644 with two discrete portions 102a, 102b, each having its own for the other and for the hub 90 Curvature and / or angular relationship. The focus and the point can be maintained, for example, by changing the relationship between the two halves 102a, 102b along the optical axis. For example, depending on the degree of action required, such as using a positioning motor (not shown in Figure 5 or a piezoelectric element (not shown), this can be achieved, for example, via a telescopic section (not shown) coupled to the mantle of the casing 1〇2 ( Not shown) to mount the motor or bad electrical component, for example, outside of a vacuum environment. The casing 102 can be interconnected, for example, on the joint 106, such as by a thin connecting member that does not impede significant amount of light transmitted through the collector. Thus, for example, the use of an actuator as described above for the manipulation of the outermost casing 102, such as the joint 106, will have the effect of simultaneously manipulating all of the casings 102. According to another embodiment of an embodiment of the invention, The electrode can be quickly replaced, so that the electrode life can be changed to the "cost of ownership" problem. For example, the rapid electrode replacement assembly shown in Figures 5 to 7 can be used for this purpose. In one embodiment, since the bias voltage is, for example, from the reflective surface of the sheath 102 and, for example, toward the roughened surface, the sheath can be connected to a bias voltage (not shown) to enable charged ions of the same polarity. For the purpose of collecting impurities. 20 At this time, the EHF electrode life is the same as the life figure of the money film (4). Therefore, the replacement cost and the machine stop during the material replacement constitute the DPP EUV. The cost, the cut-off. The electrode % is positioned in - or in the large vacuum chamber 24 containing the collecting optics 4Q, the frequency (4) 50, the light and light member 32, etc. by breaking the vacuum chamber to 17 1312644 The seal is, for example, connected to the electrode 26, and the chain can be made different. If the internal chamber of the vacuum chamber 24 is violently exposed to the surrounding chambers such as humidity and uncleanness, the operating conditions are The time will be "" to (the influence of the right #士, B + field ^ also affects the overall performance ^ ring the cost of ownership u may also be difficult because the exposed vapor is attached to the inside of the chamber (four). Money makes the miscellaneous and water even in In a perfect environment, the volume required for the optical components required for 4 is about 5 to 1 minute. In addition, by adding extra:: straight: in addition to time, the pumping time is faster. But according to the selected u pump up to 10 15 20 $30KMls square 4 Each of the equations requires approximately $20 to the cost. However, it is possible to eliminate important downtime factors by pumping water vapor trapped in chamber 24. ...,; - Reality of the type _ by adding A sealed flange adjacent to the = pole 26 will eliminate the need for the container to be vented and resealed for subsequent pumping. However, this position is detrimental to the position of the sealed flange. The collecting optics 4 must be positioned (so the miscellaneous light member is positioned to be close to the hard clip 32 points. In addition, the area immediately adjacent to the blocking clip 32 may be subjected to a temperature exceeding the fineness, or is also susceptible to self-electrode during the illumination. The surface of the metal which is evaporated by the "can." according to the embodiment of the present invention, therefore, by using the - expansion joint m, such as increasing the tip of the electrode 26 and the like - such as the debris resist 36 The distance between the components 'by means of # replace the electricity (four). The telescoping section 122 may also have some utility for the following items: Applicants have observed optical alignment of the position of the baffle 32 which may vary (e.g., due to repetition rate and gas mixture), and thermal effects on the collection optics (e.g., collection) The deflection of the device 4G, the shadow 18 1312644 leaks and fills the chamber with dry nitrogen to prevent the formation of water vapor and surrounding debris. The components of the EUV light source 20 can be quite large and thus quite heavy. Individual segments of the vacuum handler 22 may weigh more than 4 inches. According to one embodiment of the present invention, by means of a module such as a vacuum vessel 22, the segment: the 32/DPP commutator 14G is independently mounted on a common linear actuator (not on, these segments can be Unlock and slide open to service as shown in Figure 7). Linear actuators provide dual use of the Valley Easy Module and alignment during reassembly during electrode replacement. 10 15 20 According to the embodiment of the present invention, the material of the pole 26 must be carefully considered, and the manufacturing technique and its specific structural type must be tested to the harsh environment in which the operation must be performed, in particular, _ Sexual and thermal load. Carbon Carbide SlC is an example of a material having advantageous properties according to the embodiment of the present invention, wherein S1C is adjusted, for example, for high conductivity. It is also possible to change two by adding a specific flaming impurity f: the conductivity of such materials and materials for the refractory gold material is described in more detail below. In addition to adjusting Sic and similar materials, for example, it is also possible to add light, such as titanium dioxide, to light oxygen (tetra), dioxane 2). Produced = Conductively doped ceramics, such as better than any metal can withstand the spray damage and thermal damage. In addition, the Tiw metallurgical metal composition ("c(10) him") may also have utility similar to SiC and related materials. Coffee beans are conductive and do not require metal doping to produce electrical conductivity, however, they have more limited thermal conductivity. If produced by vacuum heat, the TiW implement can be used well and optimally for use in accordance with an embodiment of the present invention. The alumina-titania, alumina-titanium dihalide (A1N_Ti02) system can also be useful for cryogenic systems. Applicants have found that the metal electrode 26, and particularly the inner electrode (anode) 3 〇 5, tends to tend to melt and/or ablate on the surface of the electrode 26, particularly near the jaw 32, i.e., on the anode 3〇. Since the Applicant has observed damage to the surface of the electrode 26 used, it is suggested that the plasma formed in the crucible 32 will transfer significant thermal and ion energy to the surface of the electrode 26, particularly the anode. Even tungsten-tungsten (W-Th) alloys are about 3,500. κ appears to melt and is easily splashed. 10 Covalent materials tend to be electrically insulating and more resistant to ionic damage. A doped ceramic such as Sic or alumina can be adjusted for conductivity and thermal conductivity. For example, SiC doped with BN will be at 2700. K decomposes and can be modified to have a thermal conductivity close to that of pure aluminum. The degree of BN doping in Sic may be as much as 30% by weight. Since the thermal shock resistance is proportional to the thermal conductivity of the material, the strength of 15 degrees and the fracture toughness, and inversely proportional to the expansion coefficient, the SiC-BN composite exhibits excellent thermal shock resistance. The thermal shock resistance of Oxidation is 2 〇〇.匸(△T°C) 'BN_Sic composite with 30% BN doping exhibits 630 to 120 (TC (△!"(:). Adjustable due to possible bulk conductivity of ceramics, adjustable) It is close to the conductivity of the surface of the 20 electrode 26. As for the alumina material, the surface conductivity can be enhanced by metal oxide doping (SnO, Ti〇2) without significantly negatively changing other advantageous properties of the material. To synthesize SiC-BN or alumina-titania system. Plasma spray or liquid phase sintering can be used for the mixed source powder. 21 1312644 t can be changed to a particle-enhanced CVD growth private sequence used in Kauai. In order to obtain the best material density and it is important for electrodes that do not crack or explode. For example, please see the available literature and information.

Trex Enterprises的網頁。因為Trex的程序在低壓（1〇〇托耳） · 5完成，電極將具有相對較低的溶解氣體且具有高密度。Trex 'Trex Enterprises' web page. Since Trex's program is completed at low pressure (1 Torr), the electrode will have a relatively low dissolved gas and a high density. Trex '

SiC材料接近ι〇0%稠密，此情形很理想。此程序示意性顯 . 不於第8圖’圖中譬如示意性顯示經由顆粒增強的CVD之 SiC BN複〇物合成，亦即譬如一譬如1〇〇毫托耳' 14〇〇。〇的 還原環境中藉由一存在Η2的Mcs而在出現一 Sic表面144時 鲁 1〇甲基氣矽烷(Methly_Chl〇ro 8如1^)140於61^粒子142上之熱 分解。 其他合成方法譬如可用於氧化鋁_Tiw: A)在一還原環 境中燒結以在陶瓷表面上生成非理想配比氧化物，亦即其 氧氣不足且具傳導性；B)將氧化鋁放置在二氧化鈦中且將 15兩者燒結/擴散在一起；c)沉積交替層的兩材料，然後以 >1900°C來燒烤此系統或D)真空熱加壓，因為耐火金屬的熱 加壓可含有高的溶解氣體裎度，故其譬如可使用於純％。 鲁 咼的溶解氣體程度將促進電極凹蝕及金屬電極中的火山型 爆發。 2〇 現在參照第9圖，圖中顯示一電極26(譬如一陽極3〇)， 其可譬如具有一可譬如由經摻雜的氧化鋁或Sic_BN形成且 亦可能譬如為未扭雜的TiW之外表面150。 一譬如供微型微影術使用之用於EUV之放電產生的電 _ 漿聚焦光源20亦引發了關於電極26之其他需求，特別是有 22 1312644 關冷卻及製造需求。第2圖示意顯示之一陰極28及一陽極30 的同軸電極組譬如可在脈衝式操作期間暴露於高的平均熱 通量（>1千瓦/平方公分）及極高的暫態熱通量(>1百萬瓦/平 方公分）。如此可能譬如需要連同最佳可取得的冷卻技術來 5 使用而t火金屬及專用的合金，譬如上文所述。在具有不同 熱膨脹係數的不同金屬之間亦可能需要高真空及結構完整 的接合部。 參照第9至16圖，顯示包括一電極總成160之本發明的 一實施例。電極總成160譬如可包括一陰極（外電極)總成162 10 及一陽極總成220。申請人已經在數項具不同外徑的幾何實 施例中測試圓柱形陽極3 0 (内電極）。測試最小的經冷卻裝置 具有0.625吋外徑，並測試具有0.725吋外徑之另一者。可想 見未來將需要高達1”外徑或更大的較大電極。然而，由於 熱通量分佈在較大面積，較大電極的冷卻可能較不困難。 15 然而，在較大直徑的電極中，由於在製造與操作期間隨著 溫度具有較大的相對尺寸變化，不同金屬之間的接合將變 得更困難。相反地，較小直徑的電極可能更容易製造但在 操作期間更難以冷卻。一般而言，由於需要使一譬如氣體 等電漿源輸送經過電極中心，將令此設計更加複雜，目前 20 預見此氣體譬如為氙。此輸送亦可能處於固體狀態或液體 狀態。可將電極26及連同所輸送的電漿源視為消耗品，因 此亦具有成本敏感度。 一般而言，可利用硬銲及熔合熔接技術之混合方式來 組裝屬於本發明的一實施例所想見類型之電極。接合類型 23 1312644 及製造次序譬如取決於特定設計。如果可能的話，可使用 譬如304L或316L的易熔接不銹鋼來製造電極總成16〇。這譬 如可保持低的材料成本、簡化機械加工及組裝並改善完成 品的良率。由於高表面溫度暫態，電極26完全可譬如由一 5諸如鶴或其假合金包括W-Cu、W-La、W-Th及W-Re等耐火 金屬製成。然而，這將造成具有〜4.5 ppm/t：低熱膨脹係數 (CTE)的脆耐火金屬接合至諸如具有〜16.6 ppm/t：較高CTE 的鋼等之問題《此接合可能需要譬如與高真空相容及能夠 同時承受譬如超過1000 psig之内部冷卻劑壓力。由於需要 · 10在鎢中機械加工譬如即便利用所謂“可機械加工，，型假合金 普通仍無法旋設或銑設之深型環狀冷卻通路，將使此設計 進一步更加複雜，故必須譬如利用放電機械加工（“EDM”） 及研磨程序加以生成。大部份元件需要高精密機械加工， 以石t保電極總成160的適當且均勻的冷卻可滿足譬如緊密 15受限的冷卻容積等增添之需求。 根據本發明的一實施例之一型態，申請人目前想見鶴 對於鋼接合部採用硬銲方式，譬如在—處於1〇至6托耳壓力 鲁 範圍的真空爐具中譬如使用〜1000°C溫度的金及鎳合金，諸 如NIORO®(82〇/〇AU-18%Ni)。因為金能夠良好地濕潤鎢且具 20有高延展性藉以譬如在接合部中導致較低的殘留應力，所 以申δ青人已經選用金。根據本發明的—實施例之一型雜的 特定接合部設計可使得鋼對於鎢提供—環狀安裳槽。在爐 - 具中加熱期間，更快速膨脹的鋼會使轉從其内徑產生彈性 - 應變。這譬如具有冷卻時可降低鎢中的殘留應力、而且亦 24 1312644 將鎢精確地定心在鋼球中之雙重利益。較低的殘留應力對 於避免鎢龜裂而言係棰為重要。 根據本發明的〆变態之另一種可能技術係採用銅回 鑄。申請人想見一種包括將熔融無氧的銅傾倒在譬如一耐 5火金屬電極胚料周圍之程序。隨後可從所產生的總成將完 成的元件進行機械加工。雖然無氧的銅具有17 ppm/°c的 CTE，其柔軟且具延展性而只有10 ksi的降伏應力（諸如 304L等沃斯田不銹鋼的〜25%)因此可在接合部局部地降伏 且大幅地降低了鎢上的壓縮應力。如果需要進一步降低殘 10 留應力則隨後可加以退火。此程序的一特別優點係為結合 部的良好真空及結構性質。此程序產生的此結合部譬如概 括更不容易具有原本是硬銲式總成的問題之洩漏狀況。 此技術的主要缺黏譬如在於銅的缺乏強度。銅譬如並 不能良好地應付螺紋細節或金屬密封所施加的高局部支承 15力，且其根據本發明的一實施例之型態認為對於本申請案 很重要。然而，譬如町藉由小心設計來避免此等問題，且 申請人認為此等問題it不會限制使用此技術根據本發明的 一實施例之型態來製造DPP EUV電極。普藍西（piansee)且 包括其美國子公司碩瓦柯夫（Schwartzkopf)及其他單位係 20為根據剛剛引用的程序製成之接合部的供應來源。 硬鲜至鋼之大於〜0.75”外徑的鎢電極譬如可由於接合 介面的殘留應力而具有高的龜裂危險。一用以避免此現象 之技術譬如係在接合部中使用—轉折***件。轉折***件 的材料選擇譬如可能需要具有接近鎢的CTE但亦具有良好 25 1312644 延展性以更良好地應付譬如終將在與鋼的邊界發生之較高 應力之材料。良好的可機械加工性亦為有幫助的性質。根 據本發明的一實施例之一型態，由於鉬能夠符合需要此判 別標準且可以類似技術良好地硬銲，申請人想見可使用具 5 有5·35 ppm/°CCTE之鉬。這對於所想見較大直徑的鎢電極 將特別有用，且其暗示將此概念使用在工程設計中。 根據本發明的一實施例之型態，電極總成160可包令—· 外電極總成162，外電極總成162可具有一連接至一用於以 安裝螺絲168將電極總成160安裝至SSPPM 139的電極總成 1〇 安裝凸緣166之電極總成側壁164。概呈圓柱形側壁164可連 接至一圓形冷板170或與其成為一體，圓形冷板170可在其 中機械加工一中央開口以***一陰極基底21〇及複數個冷 卻通路 172、174及214、216。 外電極（陰極)基底210可在其内機械加工有複數個冷卻 15通路184及入口管182開口及出口管180開口，而譬如形成四 個通路184且其各具有一入口管182及一出口管18〇,以冷卻 陰極28用。冷卻劑可從一冷卻劑入口 173進入至一入口充氣 室172,且入口充氣室172連接至一對相對的入口充氣室176 及178(顯示於第12c及Η圖中）。四個長管180的兩者各連接 20至入口充氣室176或178。四個短管182的兩者各連接至一各 別的通路184且連接至一出口充氣室214或216,各出口充氣 室214或216連接至—冷卻劑出口 175。 陰極基底210亦可機械加工以包含一用於形成陰極内 壁163之中央開口218。 26 1312644 电極總成160的材料且包括外電極（陰極）總成162及内 電極（陽極)總成220譬如可為不銹鋼3〇4L型，但可由經燒結 鎢或上述材料製成之陽極30則除外。隔板256與内壁25〇及 254在電極30頂上相遇的點之間的分隔距離可能係為重要 5的尺寸，且必須基於在隔板256與電極壁25〇、254之間通過 此點提供適當冷卻所需要的冷卻劑流量加以選擇。 根據本發明的一實施例之一型態，可利用一簡單的開 放通路冷卻配置來冷卻陽極30,譬如其中冷卻劑係流上藉 由具有電極30的一中空内部252之陽極3〇所形成的内電極 1〇 (陽極)30之一内壁250、然後流下内電極（陽極)3〇的另一内 壁254’可能藉由將一熱管隔板256裝拼在中空内部乃2内的 内壁250、254之間以便利此作用。可藉由電極内壁25〇、254 之間邊界的對流以及穿過隔板256與内壁250、254之間的冷 卻劑來達成熱傳。申請人已經決定出此應用中可達成之最 15好熱性結果，其中譬如使冷卻劑流上内部内壁254及流下外 部内壁250。 另-考量因素譬如係為薄壁(〇._，，)隔板256，其根據 本發明的一貫施例之一型態可分隔内電極（陽極）3〇冷卻系 統的入口，且其係自用於冷卻内電極3〇排出隔板攻與外側 2〇内壁250之間的通這之熱交換器的排放通路27〇導往隔板 256與内側内壁2M之間的通道。根據本發明的一實施例之 -型態’譬如為了避免屈曲’此隔板256譬如可能負荷有冷 部劑壓力造成的拉力而非壓!宿，且其係為剛才描述的流徑 之結果。此方案譬如亦能夠具有可利用隔板256的譬如3〇4l 27 1312644 等材料的完全降伏強度之設计。申请人已經測試一種利用 此冷卻方式並具有最高37 lpm流率及>80 psig進入壓力之 原型電極30。申請人相信，此設計可能譬如能夠承受大幅 超過1000 psig及更高之入口水壓以及對應於超過3千赫兹 5 及更高的源電漿放電重覆速率之熱負荷。The SiC material is close to ι〇0% dense, which is ideal. This procedure is schematically shown. The SiC BN retort synthesis via particle-enhanced CVD is shown, for example, in a schematic representation of Figure 8, which is, for example, 1 Torr. In the reduction environment of ruthenium, thermal decomposition of ruthenium methyl decane (Methly_Chl〇ro 8 such as 1^) 140 on 61^ particles 142 occurs when a Sic surface 144 is present by a Mcs in the presence of Η2. Other synthetic methods such as alumina _Tiw: A) sintering in a reducing environment to form a non-ideal proportioning oxide on the ceramic surface, ie, its oxygen is insufficient and conductive; B) placing the alumina in the titanium dioxide And sintering and diffusing 15 together; c) depositing two materials of alternating layers, then grilling the system at > 1900 ° C or D) vacuum hot pressing because the hot press of the refractory metal may contain high The solubility of the dissolved gas, so it can be used for pure %. The degree of dissolved gas in Lu will promote electrode erosion and volcanic eruptions in the metal electrode. Referring now to Figure 9, there is shown an electrode 26 (e.g., an anode 3) which may, for example, be formed of doped alumina or Sic_BN and may also be untwisted TiW. Outer surface 150. An electro-plasma focusing source 20, such as that used for micro-lithography for EUV discharges, also raises other requirements regarding electrode 26, particularly with the cooling and manufacturing requirements of 22 1312644. Figure 2 is a schematic representation of a coaxial electrode set of one of the cathodes 28 and an anode 30, such as a high average heat flux (> 1 kW/cm 2 ) and a very high transient heat flux during pulsed operation. Quantity (> 1 MW/cm 2 ). This may be desirable, for example, in conjunction with the best available cooling techniques for the use of metal and special alloys, as described above. High vacuum and structurally complete joints may also be required between different metals having different coefficients of thermal expansion. Referring to Figures 9 through 16, an embodiment of the invention including an electrode assembly 160 is shown. The electrode assembly 160 can include, for example, a cathode (outer electrode) assembly 162 10 and an anode assembly 220. Applicants have tested cylindrical anodes 30 (internal electrodes) in a number of geometric embodiments having different outer diameters. The smallest cooled device tested had an outer diameter of 0.625 inches and tested with the other with an outer diameter of 0.725 inch. It is conceivable that larger electrodes with an outer diameter of 1" or larger will be required in the future. However, since the heat flux is distributed over a large area, cooling of larger electrodes may be less difficult. 15 However, at larger diameter electrodes In this case, the bonding between different metals will become more difficult as the temperature has a larger relative dimensional change during manufacturing and operation. Conversely, smaller diameter electrodes may be easier to manufacture but more difficult to cool during operation. In general, this design will be made more complicated by the need to transport a plasma source such as a gas through the center of the electrode. It is expected that the gas will be in a solid state or in a liquid state. The electrode 26 can be used. And together with the delivered plasma source as a consumable, and therefore also cost sensitive. In general, a combination of brazing and fusion welding techniques can be used to assemble an electrode of the type contemplated by an embodiment of the present invention. Bonding type 23 1312644 and manufacturing order depend, for example, on the specific design. If possible, use fusible stainless steel such as 304L or 316L. The electrode assembly is fabricated to 16 〇. This can, for example, maintain low material costs, simplify machining and assembly, and improve the yield of the finished product. Due to the high surface temperature transient, the electrode 26 can be completely as a 5 such as a crane or its pseudo alloy. Made of refractory metals including W-Cu, W-La, W-Th and W-Re. However, this will result in a brittle refractory metal with a ~4.5 ppm/t: low coefficient of thermal expansion (CTE) bonded to, for example, ~16.6 Ppm/t: Problems with steels such as higher CTEs. "This joint may need to be compatible with high vacuum and can withstand internal coolant pressures of more than 1000 psig at the same time. Due to the need for 10 machining in tungsten, for example, even using so-called “Mechanical processing, the deep annular cooling path that can not be screwed or milled normally, will make this design more complicated, so it must be generated by using discharge machining (“EDM”) and grinding program. . Most components require high precision machining, and proper and uniform cooling of the stone electrode assembly 160 can meet the increased requirements such as tight 15 limited cooling volume. According to one aspect of an embodiment of the invention, the applicant currently desires to use a brazing method for the steel joint, such as in a vacuum oven having a pressure range of 1 to 6 Torr, such as ~1000°. Gold and nickel alloys at C temperature, such as NIORO® (82〇/〇AU-18%Ni). Because gold can wet tungsten well and has a high ductility, such as causing lower residual stress in the joint, it has been gold. The particular joint design according to one of the embodiments of the present invention allows the steel to be provided with tungsten for the tungsten. During furnace heating, the more rapidly expanding steel will cause the rotation to produce elastic-strain from its inner diameter. This has the dual benefit of reducing the residual stress in the tungsten, for example, while cooling, and also accurately centering the tungsten in the steel ball. Lower residual stress is important for avoiding tungsten cracking. Another possible technique for the metamorphosis of the present invention is copper back casting. The Applicant would like to see a procedure involving the pouring of molten oxygen-free copper around a billet of a metal-resistant electrode. The finished component can then be machined from the resulting assembly. Although oxygen-free copper has a CTE of 17 ppm/°c, it is soft and malleable with only a 10 ksi drop stress (~25% of Vostian stainless steel such as 304L), so it can locally fluctuate at the joint and The compressive stress on the tungsten is reduced. If it is necessary to further reduce the residual stress, it can be annealed subsequently. A particular advantage of this procedure is the good vacuum and structural properties of the bond. This combination produced by this program, for example, is less likely to have a leak condition that would otherwise be a problem with the braze assembly. The main lack of adhesion of this technology lies in the lack of strength of copper. The gongs do not cope well with the high local support forces exerted by the thread details or metal seals, and their type according to an embodiment of the invention is considered to be important to the present application. However, the town has been carefully designed to avoid such problems, and the Applicant believes that such problems would not limit the use of this technique to fabricate DPP EUV electrodes in accordance with an embodiment of the present invention. Piansee and its US subsidiary, Schwartzkopf, and other unit systems 20 are sources of supply for joints made according to the procedure just cited. Tungsten electrodes having a hard-to-steel greater than ~0.75" outer diameter may have a high risk of cracking due to residual stresses in the joint interface. A technique for avoiding this phenomenon, such as use in joints, is a transition insert. The material selection of the transition insert, for example, may require a CTE close to tungsten but also a good 25 1312644 ductility to better cope with materials such as higher stresses that would eventually occur at the boundary with the steel. Good machinability In order to be of a useful nature, according to one embodiment of the invention, since the molybdenum can meet this discriminating criterion and can be brazed well by similar techniques, the applicant would like to make the appliance 5 have 5.35 ppm/°. Molybdenum of CCTE. This would be particularly useful for larger diameter tungsten electrodes, and it implies the use of this concept in engineering. According to an embodiment of the invention, the electrode assembly 160 can be ordered - The outer electrode assembly 162, the outer electrode assembly 162 may have an electrode connected to an electrode assembly 1 mounting flange 166 for mounting the electrode assembly 160 to the SSPPM 139 with mounting screws 168 Side wall 164. The generally cylindrical side wall 164 can be coupled to or integral with a circular cold plate 170 in which a central opening can be machined to insert a cathode substrate 21 and a plurality of cooling passages 172, 174 and 214, 216. The outer electrode (cathode) substrate 210 can be machined therein with a plurality of cooling 15 passages 184 and inlet tube 182 openings and outlet tube 180 openings, such as four passages 184 and each having an inlet Tube 182 and an outlet tube 18 are used to cool cathode 28. Coolant can pass from a coolant inlet 173 to an inlet plenum 172, and inlet plenum 172 is coupled to a pair of opposing inlet plenums 176 and 178 ( Shown in Figure 12c and in the drawings. The two long tubes 180 are each connected 20 to the inlet plenum 176 or 178. The two short tubes 182 are each connected to a respective passage 184 and connected to a An outlet plenum 214 or 216, each outlet plenum 214 or 216 is coupled to a coolant outlet 175. The cathode substrate 210 can also be machined to include a central opening 218 for forming the cathode inner wall 163. 26 1312644 Electrode assembly 160 Materials and The electrode (cathode) assembly 162 and the inner electrode (anode) assembly 220 may be of the stainless steel type 3〇4L, except for the anode 30 made of sintered tungsten or the above materials. The separator 256 and the inner wall 25〇 and 254 The separation distance between the points encountered on top of the electrode 30 may be an important 5 size and must be selected based on the coolant flow required to provide proper cooling between the separator 256 and the electrode walls 25A, 254 through this point. According to one aspect of an embodiment of the invention, the anode 30 can be cooled by a simple open path cooling arrangement, such as in which a coolant stream is formed by an anode 3 of a hollow interior 252 having an electrode 30. The inner wall 250 of one of the inner electrodes 1 (anode) 30 and then the other inner wall 254' of the inner electrode (anode) 3 可能 may be assembled by arranging a heat pipe partition 256 on the inner wall 250 in the hollow interior 2 Between 254 to facilitate this role. Heat transfer can be achieved by convection at the boundary between the inner walls 25, 254 of the electrodes and through a coolant between the separator 256 and the inner walls 250, 254. The Applicant has determined the most pleasing thermal results achievable in this application, such as flowing coolant onto the inner inner wall 254 and down the outer inner wall 250. In addition, the consideration factor is, for example, a thin-walled (〇._,) partition 256, which can separate the inlet of the internal electrode (anode) 3〇 cooling system according to one of the consistent embodiments of the present invention, and is used by itself. The discharge passage 27 of the heat exchanger passing through between the cooling inner electrode 3 and the outer side wall 250 is guided to a passage between the partition 256 and the inner inner wall 2M. In accordance with an embodiment of the present invention - for example, to avoid buckling, the baffle 256 may be loaded with tension due to cold agent pressure rather than pressure, and it is the result of the flow path just described. This solution, for example, can also have a design with a full relief strength of materials such as 3〇4l 27 1312644 that can utilize the partition 256. Applicants have tested a prototype electrode 30 that utilizes this cooling method and has a flow rate of up to 37 lpm and > 80 psig entry pressure. Applicants believe that this design may, for example, be able to withstand inlet water pressures well above 1000 psig and higher and heat loads corresponding to source plasma discharge repetition rates of more than 3 kHz 5 and higher.

然而’根據本發明的一實施例之一型態，環狀通路可 能譬如需要南的熱傳係數’例如，暴露於冷卻劑的有限面 積譬如會需要很有效率的熱傳且因而需要高的熱傳係數。 並且’根據本發明的一型態，譬如内壁250、254上的較古 10溫度譬如會需要以高壓來輸送高流率的冷卻劑以譬如抑制 冷卻劑的沸騰，特別是薄片或體塊沸騰而非核沸騰，這可 實際地改善從内壁250、254至冷卻劑的熱傳。 15 根據本發明的一實施例之另一型態，申請人邦見在♦ 極30的中空内部内使用一多孔金屬熱交換器。此實施例 圖示）中，譬如特別是在包含電極30的匝夹開口之梢部料區 域中，可譬如將一多孔金屬媒體例如藉由硬銲譬如結合至 電極30的内壁250、254。這譬如終會在陽極2〇上導致—大However, according to one embodiment of an embodiment of the invention, the annular passage may, for example, require a heat transfer coefficient in the south, for example, exposure to a limited area of the coolant, for example, may require efficient heat transfer and thus require high heat. Pass coefficient. And 'in accordance with a version of the present invention, such as the ancient 10 temperature on the inner walls 250, 254, for example, would require high pressure to deliver a high flow rate of coolant to, for example, inhibit the boiling of the coolant, particularly the flakes of the flakes or blocks. Non-nuclear boiling, which can actually improve heat transfer from the inner walls 250, 254 to the coolant. According to another version of an embodiment of the invention, Applicant uses a porous metal heat exchanger in the hollow interior of the 119 pole. In this embodiment, for example, particularly in the tip region of the jaw opening containing the electrode 30, a porous metal medium can be bonded, for example, to the inner walls 250, 254 of the electrode 30, for example by brazing. This will eventually lead to the anode 2〇 - large

型的延伸鰭片以供冷卻用。從内壁25〇、254進入此延伸的 多孔表面積之傳導性熱㈣如可比橫越環狀通路的簡單壁 20 進入冷卻_之對紐熱傳更具纽率。延伸的多孔表面 積譬如則可具有-遠為更大的面積以自其將熱量排放至冷 卻劑中。結果譬如為使用更少冷卻劑且具有更好的熱傳。 此結構亦可在電極3 〇的整體中空部分2 5 2中取代隔板2 $ 6及 内壁250、254 多孔金屬熱交換器之可能的缺陷譬如可能 28 1312644 係為橫越多孔媒體之高的固有壓降。在高的源重覆速率 • 肖，這#如會f要高的人口壓力且在硬録結合部及只與冷 . 々劑泵送相關聯的流隔板中導致大的機械應力，m = ， 檢討。另一可能的缺陷譬如係為由於進入冷卻劑的更:效 5熱傳會放大橫越電極3〇壁溫度降低而造成之橫越電極綱 的溫度降低，且其會產生橫越電極3〇的般套壁之高: # ° 〜、 φ 車父尚的應力程度可能導致電極的鶴殼套壁之結構性失 效。另一設計的判別標準可能譬如係為譬如由於電極3〇在 1〇迸發模式操作所造成之電極3〇殼套壁中的交替應力，其譬 如可具有與靜態應力負荷不同的結果。這譬如導致了電極 輝料需具有拉伸堅固性且亦具韋刃性之需求。譬如在不同 操作方法中’包括重覆速率、Ε纽度、任務循環等因素， 入射在％極避之熱通量分佈亦為譬如決定電極 15 量因素。麸而由4 考 ’、'、、、而，申凊人已經以最高達2千赫茲的重覆速率譬 魯 負極丨生組態中測試譬如得自Thermacore的多孔鶴電 本而’、，、失政。根據本發明的一實施例之一型態的另—種可 能性譬如可枯pg 制 吏用言如利用一譬如講自Porvair的多孔銅泡棉 、 孔鋼貝經冷卻電極30 ,其譬如可由放電機械加工 20 (“EDM”）機，、、 电飛鐵加工 用& 蛾加工成為對於根據本發明的實施例之應用有 r ) 生係構。根據本發明的一實施例之型態的另—種可 . 於2 °如利用電鍍或離子熔合技術來採用均勻沉積至對 上、干璉定的最佳硬銲厚度之銀。此途徑譬如可實現如同 上文對於内邻貝兄戈丨j 免極（陽極)3〇所述的多孔金屬冷卻之完全潛能。 29 1312644 根據本發明的一實施你丨 來實現古埶通旦A：g卩, 〜型態，譬如可利用微通路 末貫現问熱通里冷部，據此實施例， 力將冷卻齡送經過道、微桃。^， 這些通道可能譬如為管形或長 般而5 的整體尺寸。此配置中通路# 〃 G.G2G时或更小 可能是有制，且類似於目2㈣於冷卻财積之比值 高熱通《子元件及功率半導/心卩雷射二極體及其他 冷卻本發明的電極3〇。申，人㈣可利用此技術來 速率來測試原型微祕冷卻^^最高達2千赫兹的重覆 10 15Extended fins for cooling. The conductive heat (4) from the inner wall 25A, 254 into the extended porous surface area is more comparable than the simple wall 20 that traverses the annular passage. The extended porous surface can have, for example, a much larger area from which heat is dissipated into the coolant. The result is, for example, the use of less coolant and better heat transfer. This structure can also replace the possible defects of the separator 2$6 and the inner wall 250, 254 porous metal heat exchanger in the integral hollow portion 2 5 2 of the electrode 3 譬, such as the possibility that the 28 1312644 is inherently high across the porous medium. Pressure drop. At high source repetition rates • Xiao, this # would have a high population pressure and cause large mechanical stresses in the hard-discharge joint and only in the flow separator associated with cold pumping, m = , review. Another possible defect is, for example, due to the fact that the heat transfer into the coolant is increased, the temperature across the electrode wall is lowered, and the temperature across the electrode is lowered, and the temperature across the electrode is lowered, and it is generated across the electrode 3〇. The height of the wall: # ° 〜, φ The degree of stress of the rider may lead to structural failure of the electrode sheath wall of the electrode. The criterion for the design of another design may be, for example, an alternating stress in the wall of the electrode 3 of the electrode 3 due to the operation of the electrode 3 in the burst mode, which may have a different result than the static stress load. This has led to the need for electrode slabs to have tensile strength and sharpness. For example, in different operating methods, including factors such as repetition rate, Ε 、, task cycle, etc., the heat flux distribution incident on the % pole is also determined as the electrode 15 factor. Bran and 4 test ', ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, In ruin. Another possibility, according to one embodiment of an embodiment of the invention, such as the use of a porous copper foam from Porvair, a porous steel bead, such as a dischargeable electrode 30, can be discharged. Machining 20 ("EDM") machines, &, Festling Iron Processing & Moths are processed to have r) biosystems for applications in accordance with embodiments of the present invention. Another type of embodiment in accordance with an embodiment of the present invention can be used at 2 °, such as by electroplating or ion fusion techniques, to uniformly deposit silver onto the upper, dry, and optimal braze thickness. This approach, for example, achieves the full potential of porous metal cooling as described above for the inner neighboring brothers (electrode). 29 1312644 According to an implementation of the present invention, you can realize the A:g卩,~ type, for example, the micro-channel can be used to solve the heat-passing cold portion. According to this embodiment, the force will be sent to the cooling age. After the road, micro peach. ^, These channels may be, for example, tubular or long and the overall size of 5. In this configuration, the path # 〃 G.G2G or less may be in the system, and similar to the target 2 (four) in the ratio of cooling accumulation, high heat flux "sub-components and power semiconductors / 卩 卩 laser diodes and other cooling The electrode of the invention is 3〇. Shen, person (4) can use this technology to test the prototype micro-secret cooling ^^ up to 2 kHz repeat 10 15

卻技術達成遠為更高的重覆並相信可利用此冷 、率。然而，此技術確實呈現 ==嫌高的壓降且亦可能在源部操作期間 ¥應力’鲁如將—相對較硬的微通路***件硬 銲至-鶴殼套陽極3G的中空部攻内將可能譬如如同上述 般地導致陽極總成細中的額外束限及應力，在整體設計中 必須考慮此作用。However, the technology is far more repetitive and believes that this cold rate can be utilized. However, this technique does exhibit a pressure drop of == high and may also be stress-tight during the operation of the source section - the relatively hard micro-channel insert is brazed to the hollow portion of the axillary anode 3G This may result in additional beam limits and stresses in the anode assembly as described above, which must be considered in the overall design.

言如第10至15圖所示，外電極（陰極)28可包括一譬如概 呈環形之陰極總成162。陰極28本身在陰極㈣162内可具 有譬如面對内電極30且譬如從基底的〇19吋變動至上邊緣 的0.46吋之間隙之15。圓錐形内表面163的形式。上邊緣可 2〇被一陰極蓋212覆蓋。外電極（陰極)28譬如可遠大於内電極 (陽極)30且因此較易冷卻。根據本發明的一實施例，外電極 28的侵蝕比起内電極30來說亦可能較不造成問題，因此材 料選擇及製造亦略為較簡單。因此，可不將此外電極（陰 極)28視為消耗品。 30 1312644 根據本發明的—實施例之-㈣，外電極(陰極)28譬如 可由GUdco^ALM製成，其亦即一種得自〇_金屬公司 (OMG Metals Inc.)的專用經氧化物散佈物加強的銅，根據 本發明的-型態’譬如基於其導熱性與導電性而選擇此材 5料，且其亦譬如合併有良好的機械強度及合理的可機械加 工性。此㈣—⑧外電極28譬如可硬銲至—譬如3隱不錢 鋼基底210内。 基底210譬如可與具有第7圖所示的—卿脈衝式功率 單元139部分之外電極28互為介面。申請人已經響如利用一 錄基合金將外電極28硬銲至基底跡此鎳基合金譬如是得 自摩根坩堝公司（Morgan Crucible c〇呷抓丫 p⑹的 Nibsi®(錄/删/石夕）、最近採用得自摩根掛禍公司的㈣腦 硬銲材料，且其亦用於内電極3〇之硬辉，如上述，亦如上 述對於内電極採用類似的硬銲製備及爐具程序。 15 >上述，相對錢，由於外電極28具有較 大尺寸及使用-高導熱材料故簡化了冷卻的工作。相對較 大的開放通路水坑道184譬如可機械力〇工成仙〜⑧外電 極28體部21〇，其可譬如經由譬如諸如硬銲至體部21〇中的 開口内之短管卿斤形成的鼠管件加以供應及排放且亦 Μ連接至-入口歧管214及排放歧營216。根據本發明的一實 施例，譬如可提供四個或更多個此等坑道184以破保均句的 冷卻劑流，因此在所有位置具有更均句的冷卻。可排列嬖 如入口充氣室214及出口充氣室216(更詳細地顯示於第14 晴入口及排放管件以譬如對於各坑道m具有類似的流 31 1312644 動阻力’因此使類似的冷卻劑量流經各者。根據本發明的 —型態’申請人預期具有高冷卻劑流率及充分背壓以防止 '弗騰之開放的通路m如上述將#如足以冷卻外電極Μ。_ · $而’如果需要則可譬如採用上述的多孔媒體或微通路冷卻。 5 根據本發明的—實施例之一型態，可譬如包括有一整 - 組式冷板170且其機械加工成3〇4L陰極總成162的頂表面。 此冷板170的流動通路（更詳細地顯示於第16圖）可譬如包括 用於電極28之實際的入口歧管214及排放歧管216。可達成 此作用以譬如冷卻一可位於譬如電極總成160下方之脈衝 魯 1〇式功率輸出開關1^%未圖示），並且亦譬如用以等化前往各 冷卻坑道182之流。譬如214、216等通路可譬如銑製至陰極 總成162頂部内且亦可譬如經由熔合熔接的板加以密封。 外電極28可由用於形成冷卻坑道184之冷卻通路壁所 开/成，且可能已經將一用來密封冷卻劑坑道丨84的陰極蓋 15 212炖製至其頂端及陰極基底210。 陰極總成163可藉由螺絲231接合至陽極總成22〇且可 譬如藉由一重疊的中心絕緣體222彼此絕緣，此重疊的中心 鲁 絕緣體222譬如可由熱解性(pyr〇iitic)氮化硼或氧化鋁製成 且·#如沿内電極30的外壁呈軸向延伸且延伸一段無彈性體 20電極絕緣體224，無彈性體電極絕緣體224譬如可由熱解性 II化石朋或氧化|呂製成且譬如可由一絕緣體扣夾242及其固 定螺絲244固持在位置中。可藉由一對無彈性體金屬c密封 . 環230在絕緣體224與陰極基底210之間提供密封，其中一者 - 位方：、纟巴緣體2 24與陰極基底21 〇之間且一者位於絕緣體血陽 32 1312644 極總成220之間，而***各別的相對溝槽中。 根據本發明的一實施例之另一型態，認為雜屑消減是 長效操作的DPP EUV光源之重要考量因素。根據本發明的 一實施例之一型態，一放電產生的電漿EUV光源之中心電 5 極28譬如可由如上述一種高溫且可能具耐火性的材料製成 且亦可能譬如擁有強烈的磁透性。根據本發明的一實施例As shown in Figures 10 through 15, the outer electrode (cathode) 28 can include a cathode assembly 162, such as a generally annular shape. The cathode 28 itself may have within the cathode (four) 162, for example, facing the inner electrode 30 and, for example, from the 〇19吋 of the substrate to the gap of 0.46吋 of the upper edge. The form of a conical inner surface 163. The upper edge can be covered by a cathode cover 212. The outer electrode (cathode) 28 can be much larger than the inner electrode (anode) 30 and thus is relatively easy to cool. According to an embodiment of the present invention, the erosion of the outer electrode 28 may be less problematic than the internal electrode 30, so the material selection and manufacture are also relatively simple. Therefore, the additional electrode (cathode) 28 may not be regarded as a consumable. 30 1312644 According to the embodiment of the invention - (d), the outer electrode (cathode) 28 can be made, for example, of GUdco^ALM, which is a special oxide dispersion obtained from OMG Metals Inc. Reinforced copper, according to the present invention, is selected based on its thermal conductivity and electrical conductivity, and which, for example, combines good mechanical strength and reasonable machinability. The (four)-8 external electrode 28 can be brazed to, for example, 3 in the steel substrate 210. The substrate 210 may, for example, be interfaced with the electrode 28 having a portion other than the portion of the pulsed power unit 139 shown in FIG. Applicants have used the use of a recording base alloy to braze the outer electrode 28 to the substrate trace. This nickel-based alloy is, for example, Nibsi® from Morgan Crucible c(6). Recently, the (4) brain brazing material obtained from Morgan Inc. has been used, and it is also used for the hard glow of the internal electrode. As described above, similar brazing preparation and stove procedures are used for the internal electrode as described above. > The above, relative to the money, the external electrode 28 has a larger size and uses a high-heat-conducting material, so that the cooling work is simplified. A relatively large open-channel water channel 184 can be mechanically completed into a fairy- 8 external electrode 28 The body 21〇 can be supplied and discharged, for example, via a rat fitting formed, such as by brazing into the opening in the body 21〇, and also connected to the inlet manifold 214 and the discharge manifold 216 In accordance with an embodiment of the present invention, for example, four or more such tunnels 184 may be provided to break the coolant flow of the average sentence, thereby providing more uniform cooling at all locations. 214 and exit plenum 216 (more Finely shown on the 14th clear inlet and discharge fittings to have similar flow resistance 31 1312644 for each tunnel m' thus causing a similar cooling dose to flow through each. The applicant according to the invention is expected to have a high The coolant flow rate and sufficient back pressure to prevent 'Furton's open path m as described above is sufficient to cool the external electrode Μ. _ · $ and 'If necessary, for example, using the above porous media or micro path cooling. In accordance with one embodiment of the present invention, for example, a full-plate cold plate 170 can be included and machined into the top surface of a 3〇4L cathode assembly 162. The flow path of the cold plate 170 (more in detail Illustrated in Fig. 16) may include, for example, the actual inlet manifold 214 and the exhaust manifold 216 for the electrode 28. This effect may be achieved, for example, by cooling a pulsed power output that may be located below the electrode assembly 160, for example. The switches 1% are not shown) and are also used to equalize the flow to each of the cooling tunnels 182. For example, passages such as 214, 216 may be milled into the top of the cathode assembly 162 and may also be welded, for example, via fusion welding. Densify The outer electrode 28 may be opened by a cooling passage wall for forming the cooling tunnel 184, and a cathode cover 15212 for sealing the coolant tunnel 84 may have been stewed to its top end and cathode substrate 210. The assembly 163 can be joined to the anode assembly 22 by screws 231 and can be insulated from each other, for example, by an overlapping central insulator 222, such as pyrifiable boron nitride or Made of alumina and ## extending axially along the outer wall of the inner electrode 30 and extending a section of the non-elastomer 20 electrode insulator 224, the elastomer-free electrode insulator 224 may be made of pyrolytic II fossil or oxidized | An insulator clip 242 and its set screw 244 are held in position. The seal can be sealed by a pair of non-elastomeric metal c. The ring 230 provides a seal between the insulator 224 and the cathode substrate 210, one of which is: - between the rim body 2 24 and the cathode substrate 21 且 and one Located between the insulators of the blood yang 32 1312644 pole assembly 220, and inserted into the respective opposing grooves. According to another version of an embodiment of the invention, it is believed that debris reduction is an important consideration for long-acting DPP EUV sources. According to one embodiment of the invention, the central electrical poles 28 of the plasma EUV source produced by a discharge can be made of a material which is high temperature and possibly fire resistant as described above and may also have a strong magnetic permeability. Sex. According to an embodiment of the invention

10 1510 15

20 之此型態，由於電漿轟擊'表面融化或燒蝕、表面沸騰等 造成自電極30侵蝕之雜屑譬如亦可能具有顯著磁性。根據 本發明的一型態，申請人可想見在譬如電漿與譬如收集器 光學元件的位置之間的光徑中係產生譬如至少約50毫特斯 拉(“mT”)及譬如5〇 mT到1T範圍内之適度大的磁場。利用此 方式’譬如可使雜屑偏向，然後譬如藉由譬如排列在光徑 周邊之一適當放置的靜態磁鐵（未圖示）予以準永久性收 集。根據本發明的此實施例之一型態，此收集器磁場譬如 可由電磁鐵產生，在此例中’譬如可在一再生循環期間掃 出雜屑，且在此期間譬如可將電磁鐵減能。一適當冷卻的 高溫耐火磁性金屬譬如可為钻。 根據本發明的—實施例之另中請人想見利用 對於電極30、28的電流脈衝加以定型，以藉由在放電的磁 Μ ^ ·Μ& % 峰值而譬如在壓縮主動元件（電裝源） h最佳地使n根據此實施例的—型態，可譬 如在DPP DDPPM最後階段中包括一額外的可飽和電感 器。-可能的最佳化波形譬如可在軸向 縮減階段從一適度 電流開始、然後在徑向壓缩階段達到峰值。 33 1312644 5 15 20 已、’、二利用—種略為較接 極幾何結構來微錢 、圖之電 此模擬。然而，此模擬：細非譬如如來達成 明的-實施例之型離的摔：爾擬細節足以瞭解本發 〇、的％作之動態過程。模擬 請人雇員目前可取得之氣 帝恭 、 申 蓉如-放電槿楹料 產品的SSPPM來進行 。 心、Η於最後階段壓縮項可飽和電星有 6πΗ之電感，其約盥可取 电以态具有 Μ _ 讀料錢何結構目討達成者- k低县叫供橫越電極所可能之最快速放電，料放電脈 衝的H升時間，此模擬顯示於第 時間尺度以供說明用。如第 /、τ加長 .如弟1圖所不，在首先使用12 ηΗ電 =將—額外可飽和電感器切換成接通而快速達到“Η 總电感之一類似模擬中，放 則約20认亭並在退 前緩和地升高至_KA，峨感譬如達 h之點為止’此時根據此模崎生祕以卿的快速 =然後在約勤内降低到〇。在放電的軸向縮減階段期 間，藉由橫越電極的高峰電容器，亦即在第i8a圖的模擬中 從約5〇nS_24Gns，放電概括水平配置於外電極28的内 表面與内電_❸卜表面m㈣極财微往上增 大角^ ’直到抵達内電極30概括在内電極3〇梢部34上與凹 _最下方延伸部相鄰之—區域為止1此，其作用引發 了 2如82處的放電並縣⑽處的料移往電極26梢部， 且而要&小電流來維持移行的放電。在徑向壓縮階段期 間，譬如第⑻圖的模擬中240似與260 ns之間，當電漿形 成在电極26射卩34時，放電在前往電極26的流體流方面快In this type, the smudm from the electrode 30 caused by the plasma bombardment 'surface melting or ablation, surface boiling, etc., may also have significant magnetic properties. According to one form of the invention, Applicants may envisage generating, for example, at least about 50 millitesla ("mT") and, for example, 5 光 in the optical path between the locations of the plasma and the optical elements such as the collector. A moderately large magnetic field in the range of mT to 1T. In this way, for example, the chips can be deflected and then quasi-permanently collected, for example, by static magnets (not shown) placed appropriately in one of the perimeters of the optical path. According to one aspect of this embodiment of the invention, the collector magnetic field can be generated, for example, by an electromagnet, in this case 'for example, the debris can be swept during a regeneration cycle, and during this time, for example, the electromagnet can be deactivated . A suitably cooled high temperature refractory magnetic metal can be a drill. According to another embodiment of the invention, it is desirable to use a current pulse for the electrodes 30, 28 to be shaped by the magnetic Μ ^ Μ & % peak at the discharge, such as in a compression active component (electrical source) h optimally enables n to include an additional saturable inductor in the final stage of the DPP DDPPM, according to the embodiment of this embodiment. - Possible optimization waveforms, for example, can start from a moderate current in the axial reduction phase and then peak in the radial compression phase. 33 1312644 5 15 20 Yes, ', and two use—a kind of slightly more than the geometric structure of the micro-money, the power of the figure. However, this simulation: the details of the embodiment are as follows: the details of the embodiment are sufficient to understand the dynamic process of the % of the hair. The simulation invites employees to obtain the current SSPPM for the products of Digong, Shen Rongru, and discharge materials. The heart and the final stage of the compression term can saturate the electric star with a inductance of 6πΗ, and its approximate power can have a state of Μ _ reading material, what structure is the target to achieve - k low county is called the fastest possible for crossing the electrode The discharge, the H-liter time of the discharge pulse, this simulation is shown on the time scale for illustrative purposes. For example, the first /, τ lengthening. If the brother 1 is not, first use 12 η Η = = - the additional saturable inductor is switched on to quickly reach " Η one of the total inductance is similar to the simulation, put about 20 recognition The pavilion is gently raised to _KA in the back, and the sensation is as high as h. 'At this time, according to this, Makizaki’s secret is clear to the clerk = then to the 约 in the covenant. The axial reduction in the discharge During the phase, by the peak capacitor across the electrode, that is, from about 5〇nS_24Gns in the simulation of the i8a diagram, the discharge is generally horizontally disposed on the inner surface of the outer electrode 28 and the inner electricity _ ❸ 表面 surface m (four) Increasing the angle ^' until the arrival of the inner electrode 30 is summarized in the region of the tip end portion 34 of the inner electrode 3 adjacent to the recess_lowest extension portion, the action of which causes the discharge at 2, such as 82, and the county (10) The material is moved to the tip of the electrode 26, and a small current is required to maintain the discharge of the transition. During the radial compression phase, as in the simulation of Figure (8), 240 appears to be between 260 ns, when the plasma is formed in electricity. When the pole 26 is shot 34, the discharge is fast in terms of fluid flow to the electrode 26.

34 1312644 速地增加，其譬如經由譬如用於限定電漿之快速增加的磁 場將顯著增量的動能快速轉移至電漿，譬如導致一較好的 • 匝夾32。這以進一步的模擬顯示於第18B圖中。較好的匝夾 • 具有數項有利性質，譬如使主動源氣體離子保持在匝夹内 5 更久，以譬如誘發更大能量轉移至離子，譬如導致自匝夾 32產生更多X射線。 伴隨著壓縮的增加，所輸送的電流之此形狀可譬如在 徑向縮減中允許具有比匝夹形成期間的電流更大出高達3 ® 至5倍之電流，但整體來說，電極從SSPPM的峰值電容器消 10 散相同量的能量，因此在整體脈衝期間亦維持住電極30、 28中的熱能預算，與第18a圖模擬所示的習知放電並無不 同。習知的可飽和電感器譬如可包括在SSPPM 139壓縮頭 電路中，而譬如具有目前習知可餘和電感的兩倍，例如第 18A圖的模擬所示之12 nH，且可依平常方式飽和。一譬如 15 與習知可飽和電感器並聯以使並聯電感更小之額外的可飽 和電感器隨後可受到偏壓以飽和，譬如第18A圖的模擬所 ® 示，而譬如增加了放電最後終端的放電電流，譬如第18a圖 的模擬所示。申請人利用模擬軟體之電漿流體的模擬已經 確認了所提出的驅動器組態之優點。 20 根據本發明的一實施例之另一型態，可能需要使用一 譬如氙等源氣體來譬如產生一譬如13.5奈米等特定；I的 EUV光，但亦可夠高度地吸收相同的光而足以干擾到整體 • 的光產生輸出。因此，申請人可想見使用一對於理想λ的 所產生光較不具吸收性之譬如氬及氦等缓衝氣體，並且譬 35 1312644 如自E U V光產生容器來差異性移除源氣體及缓衝氣體 據^發明的一實施例，可對於一諸如氣等源氣體的較高^ =量歡地設定-渦輪未圖示)之組態，同時相對於諸: 氬及氦等降低泵送能量。可譬如藉由更改諸如内部間隙、 5葉片角度與速度等泵的操作特徵且亦消除泵的哈咸克 (Holweck)(分子阻力）階段，來達成此仙。因此，可建置 涡輪分子泵的設計，使以相較於諸如以分子速度為基礎的 氦等具有遠為更低的分子量氣體，優先泵送譬如氣等較高 原子量（或依需要為分子量）的氣體。 1〇 在參照第15®，顯示根據本發明的-實施例之—雜 屑遮蔽器300。此雜屑遮蔽器3〇〇能夠簡化雜屑遮蔽器3⑼的 製造並仍旎達成防止來自光源的雜屑抵達收集器鏡面之功 能性解決方案。根據本發明的此實施例，可採用經簡化的 製造技術來譬如製造雜屑遮蔽器300,同時比諸如用來製造 15柱狀結構等部分之其他種提出的製造技術更加合乎成本效 益。製造結構及技術亦放寬了可藉以產生此具有簡化製造 過程的雜屑遮蔽器3〇〇之可能的材料系列。 根據本發明的此實施例之雜屑遮蔽器3〇〇設計譬如可 由共面層302構成，譬如可將共面層3〇2排列成為可讓光子 20就像在一柱狀結構中般地從電漿源32發射且通往收集器 40。雜屑將需要領航經過這些層302以抵達收集器4〇的鏡 面。將利用監視實際有多少雜屑能夠離開由最外層302的一 外表面306(亦即對於電漿匝夾32的最外面）形成之雜屑遮蔽 器300外表面，藉以決定出所需要的層3〇2數。 36 1312644 -各示，各層302係由各別層302的-㈣ 構成。Τ:的一内表面308之間延伸之複數個光_ 成各層302的各別曲線型外表面3〇6可 位於電—周圍= 10 15 點，兑令將中〜譬如可能為相對於電極3 〇的—固定 令控制此電梁以大致對於從實際電聚的定位（譬如脈 氏衝)所動態決定的-點之各放電加以定位，譬如位於 各=内此弧316可能為一定心在焦點上之圓形的弧。各個 的门^面3〇8可具有定心在相同焦點上之相同或相似 。间心弧，差異在於依據層302厚度而具有較小的曲率半 徑。表面為共面性之意義在於繞著兩條旋轉轴線的 如在整體結構中可仍然相同，亦即從一層的外表面到一層 内表面到朝向®夾32配置之下—層的外表面仍然相同。曰 …各個各別層302的外表面306可譬如具有一弧318，譬如 ^成疋〜在第一焦點上之橢圓形，其可與弧316所形成的 圓形或一具有用於形成弧316的圓形中心之同心圓中^心相 重合。可譬如藉由收集器40所使用之收集器鏡面的形狀來 加以決定。 〆 各光通道304可能在各層302中於外表面3〇6與内表面 2〇 308之間具有均勻形狀，或朝向含有弧316及318之形狀的一 或兩中心呈推拔狀。 層譬如可由譬如鈦或鎢等金屬、譬如Si〇2、氧化鋁αι〇2 或二氧化鈦等陶瓷或耐火性金屬、或是其他陶瓷金屬組合 物所形成。 口 37 1312644 根據本發明的此實施例之另一型態，在各層302之間可 能具有間隙，如第15圖所示。各別的層302譬如可藉由可能 在各別層間的整體介面空間中對應於光通道304四角各者 之連接器柱320或者藉由週期性分隔的連接器柱320而彼此 5 附接，如第15圖所示。亦如第15圖所示，層302可分成分段， 譬如具有第15圖所示的整體尺寸或是諸如第15圖所示的分 段330之次分段。利用此方式，譬如可製造出一完整旋轉實 心體使之配合在電漿匝夾焦點32全部周圍或大致全部周 圍。 10 雜屑可能掉落至遮蔽器300底部而非累積在所提出設 計的孔中。雜屑移除譬如可以是添加的特性，譬如藉以讓 更換之間具有更長的間隔。 亦瞭解，雜屑遮蔽器300可譬如在各層302中或在相鄰 層302間的開口中（如果具有此等開口的話）沿著一弧316或 15 318譬如形成了只由相對側壁構成之開口 304。亦即，通道 304不需有四個壁312而仍可提供足夠的雜屑困阻作用及健 全的結構，但譬如這將有利於製造及/或有利於具有身為圓 形的一部分及譬如身為橢圓形的一部分之一弧2=316,318 之雜屑遮蔽器300。 20 現在參照第16圖，顯示有關一雜屑遮蔽器400的製造及 結構之本發明的另一實施例。第16圖顯示一譬如用來製造 DPP或其他EUV雜屑遮蔽器之“失焦雷射機械加工”技術的 範例，其譬如具有聚焦至一焦點之光傳輸通道，或具有一 共同焦點的推拔狀陣列結構之其他應用。 1312644 推拔狀=遮，4°〇譬如可能需要指向-共同焦點4〇2之 ^ 5 *可則—未聚焦的雷射束以夠高的雷射34 1312644 is rapidly increased, which, for example, rapidly transfers a significant incremental amount of kinetic energy to the plasma via, for example, a rapidly increasing magnetic field for defining the plasma, such as to result in a better • clamp 32. This is shown in Figure 18B in a further simulation. Better jaws • There are several advantageous properties, such as keeping the active source gas ions in the clamp for a longer period of time, for example, inducing greater energy transfer to the ions, such as causing more X-rays from the clamp 32. With the increase in compression, the shape of the delivered current can, for example, be allowed to have a current greater than 3 ® to 5 times greater than the current during the formation of the clamp during radial reduction, but overall, the electrode is from the SSPPM The peak capacitor dissipates the same amount of energy, so the thermal energy budget in the electrodes 30, 28 is also maintained during the overall pulse, which is not different from the conventional discharge shown in the simulation of Fig. 18a. Conventional saturable inductors, for example, can be included in the SSPPM 139 compression head circuit, such as twice as much as currently known and inductive, such as 12 nH as shown in the simulation of Figure 18A, and can be saturated in the usual manner. . An additional saturable inductor, such as 15 in parallel with a conventional saturable inductor to make the shunt inductance smaller, can then be biased to saturate, as shown in the simulation of Figure 18A, such as increasing the final termination of the discharge. The discharge current is shown in the simulation of Figure 18a. The applicant's simulation of the plasma fluid using the simulated software has confirmed the advantages of the proposed driver configuration. According to another aspect of an embodiment of the present invention, it may be desirable to use a source gas such as helium to generate a specific EUV light such as 13.5 nm, but it is also capable of highly absorbing the same light. Light that is sufficient to interfere with the overall • produces an output. Therefore, applicants may wish to use a buffer gas such as argon and helium that is less absorbing for the light produced by the ideal λ, and 譬35 1312644, such as from the EUV light generating container, to differentially remove the source gas and buffer. The gas according to an embodiment of the invention can be configured for a higher level of a source gas such as gas - the turbine is not shown, while reducing the pumping energy with respect to: argon and helium. This can be achieved, for example, by changing the operating characteristics of the pump, such as internal clearance, 5 blade angle and speed, and also eliminating the pump's Holweck (molecular resistance) phase. Therefore, the turbomolecular pump can be designed to preferentially pump a higher atomic weight such as gas (or molecular weight as required) with a much lower molecular weight gas than, for example, a molecular velocity based helium. )gas. 1 〇 Referring to the 15th®, the debris shutter 300 according to the embodiment of the present invention is shown. This chip blanker 3 简化 simplifies the manufacture of the chip shutter 3 (9) and still achieves a functional solution to prevent debris from the source from reaching the collector mirror. In accordance with this embodiment of the invention, simplified manufacturing techniques can be employed to fabricate the debris shutter 300, for example, while being more cost effective than other proposed manufacturing techniques such as those used to fabricate 15 columnar structures. The fabrication structure and technology also relaxes the range of materials that can be used to create this simplification of the manufacturing process. The chip shutter 3 according to this embodiment of the invention may be designed, for example, by a coplanar layer 302, such as by arranging the coplanar layer 3〇2 such that the photon 20 is like a columnar structure The plasma source 32 emits and leads to the collector 40. The debris will need to be piloted through these layers 302 to reach the mirror of the collector 4〇. It will be utilized to monitor how much debris actually can exit the outer surface of the debris shutter 300 formed by an outer surface 306 of the outermost layer 302 (i.e., the outermost surface of the plasma clamp 32) to determine the desired layer 3 2 numbers. 36 1312644 - Each layer 302 is comprised of -(d) of the respective layers 302.复: a plurality of lights extending between an inner surface 308. The respective curved outer surfaces 3 〇 6 of the respective layers 302 may be located at the electrical-around = 10 15 points, and the middle of the 譬 譬 譬 譬 譬 譬 譬 譬 譬 譬 譬 譬The —-fixation command controls the beam to position the discharges at a point that is dynamically determined from the position of the actual electro-convergence (eg, pulse pulsation), such as in each = the arc 316 may be a focus in focus The circular arc on the top. Each of the door faces 3〇8 may have the same or similar centering at the same focus. The inter-center arc differs in that it has a smaller radius of curvature depending on the thickness of layer 302. The significance of the surface being coplanar is that the two axes of rotation may remain the same as in the overall structure, that is, from the outer surface of the layer to the inner surface of the layer to the outer surface of the layer facing the clip 32. the same. The outer surface 306 of each individual layer 302 can have, for example, an arc 318, such as an ellipse at the first focus, a circle or one formed with the arc 316, and having an arc 316 for forming. The concentric circles in the center of the circle coincide with each other. This can be determined, for example, by the shape of the collector mirror used by the collector 40. 〆 Each of the light tunnels 304 may have a uniform shape between the outer surface 3〇6 and the inner surface 2〇308 in each layer 302, or may be pushed toward one or both centers containing the shapes of the arcs 316 and 318. The layer may be formed of a metal such as titanium or tungsten, a ceramic or refractory metal such as Si 2 , alumina α 〇 2 or titania, or other ceramic metal composition. Port 37 1312644 According to another version of this embodiment of the invention, there may be a gap between the layers 302, as shown in Fig. 15. The individual layers 302 can be attached to each other 5, for example, by connector posts 320 that may correspond to each of the four corners of the light tunnel 304 in the overall interface space between the respective layers, or by periodically separating the connector posts 320, such as Figure 15 shows. As also shown in Fig. 15, layer 302 can be divided into segments, such as having the overall dimensions shown in Fig. 15 or subsections such as segment 330 shown in Fig. 15. In this manner, for example, a fully rotating solid body can be fabricated to fit around or substantially all of the plasma clamp focus 32. 10 The debris may fall to the bottom of the shader 300 rather than accumulating in the hole of the proposed design. Debris removal can be an added feature, for example, to allow for longer intervals between replacements. It is also understood that the debris shutter 300 can be formed, for example, in an opening in each layer 302 or between adjacent layers 302 (if such openings are present) along an arc 316 or 15 318, such as an opening formed by opposing sidewalls. 304. That is, the passage 304 does not need to have four walls 312 and still provides sufficient debris resistance and a sound structure, but for example, it would be advantageous to manufacture and/or facilitate having a part of a circle and being like a body. A chip shader 300 of arc 2 = 316, 318 which is part of an ellipse. 20 Referring now to Figure 16, another embodiment of the present invention relating to the manufacture and construction of a debris shutter 400 is shown. Figure 16 shows an example of an "defocus laser machining" technique such as that used to make DPP or other EUV debris shutters, such as a light transmission channel that focuses to a focus, or a push-out with a common focus. Other applications of array structures. 1312644 Push-up = cover, 4°, if possible, need to point to - common focus 4〇2 ^ 5 * Yes - unfocused laser beam with high enough laser

10 =來切雷射機械加h為此，巾請人已經發現，譬如 ,可在一格栅狀料偏後方利用1线鏡彻藉以產生— 雜屑遮㈣及其通道的正挪狀。第關的配置中，可馨 如：用申請人的受讓人之XLA的雙室式腑八組態雷射加 工來提供進行失焦雷射機械加卫之譬如夠高的雷射功率及 短的田射波長。第16圖所示的—般建置可譬如包括— 第18圖所示自右方入射的平行雷射束41〇(不一定需要 全體平行）。雷射束譬如可首先入射在可能身為格楼或 周目的遮罩406上’譬如藉以產生正方形或圓形通路化。 可此由W或Mg製成的遮罩譬如可在面對雷射束41〇之側上 塗覆有-反射性塗層，譬如一紹的薄膜用以增強反射性並 避免遮罩406被雷射束41G劣化。遮罩亦#如可很輕微地 15傾斜，以避免回反射至雷射放大器/振盪器内。並且，如果 ’’周目（未圖示）由具有圓形橫剖面的線製成，可降輕回反射問 題。透鏡404或更概括來說聚焦光學裝置可譬如產生已經具 有所需要的推拔率之一陣列的收敛性小束414。 一工件420可譬如身為構成或定位成具有位於焦點4〇2 20的中心之一球形實心體的分段，可將此工件420放置在透鏡 404與雷射焦點402之間的正確距離上。即使如果雷射束41〇 的強度譬如不足以一次即將整體雜屑遮蔽器400機械加 工’譬如利用一掃描橫越遮罩406之經聚焦的雷射束將可具 有所需要的效果。亦即遮罩406、404及工件420等整體建置 39 1312644 譬如可如第16圖所示在雷射束410前方側向地、垂直地移 動’且譬如隨後可連續地將通路機械加工。可譬如控制工 件整體表面上方的掃描使其比通路412鑽製更快，所以不會 因為部份完成的鑽製而在工件部分中誘發額外應力。為了 5使掃描具有可複製性，譬如可藉由譬如用於驅動整體建置 404、406、420相對於雷射束的側向動作之壓電致動器來使 其機動化及/或加以控制。或者，可藉由譬如用於保存雷射 束的入射方向及雷射聚焦位置之致動器控制的偏向光學裝 置（未圖示），使雷射束掃描橫越透鏡404。可控制雷射束410 10使其具有夠高的強度，故即使失焦時亦足以燒蝕工件，但 同時不會損傷透鏡404及反射遮罩406。因此，大部份案例 中’最適合採用譬如雷射束410的短（紫外線)波長。申請人 相信，譬如第16圖所示將遮罩4〇6放置在透鏡404前方是更 好的方式，藉以避免來自遮罩406的雷射濺鍍材料入射在透 15鏡上而損傷透鏡。濺鍍材料係時常發射朝向雷射光入射之 方向。另一種譬如提高工件420上的雷射強度之選項可能係 譬如進行使用745奈米或772奈米的Ti-藍寶石雷射之毫微微 秒雷射機械加工，且譬如使其後續頻率分別增加成三倍或 四倍且然後譬如利用一KrF或ArF受激準分子雷射放電雷射 20 放大器來放大此脈衝。 根據本發明的一實施例之另一型態，可利用一電化反 應來實行雜屑移除。申請人想見可利用鎢在室溫下會直接 與氟F2或一含氟分子譬如nf3起反應以形成氟化鎢WF62 作用。根據本發明的一實施例，可譬如合併源輸出與一諸 1312644 如氟或氣等鹵素氣體以譬如形成一金屬鹵化物，藉以從源 輸出移除了譬如來自鎢電極30之過多的鎢原子。一範例 中，可譬如在譬如出現反應性鹵素氣體下由不需要的雜屑 • 粒子譬如鎢原子、離子及叢集形成類似评？6或\^(：16等分子 5 之反應，藉以形成一揮發性氣體。與在固體表面（譬如收集 器光學裝置）上具有高黏著機率的純鎢粒子構成強烈對 比，這些分子化合物在固體表面上具有很低的黏著機率因 此優先自容器泵除及移除。譬如***從EUV電漿源所發射 ® 的輸出光内之此揮發性氣體因此譬如係可提供一種可能使 10 不需要的鎢原子與“洗除器’’鹵素氣體之間發生增加的原子 碰撞之環境。這隨後可譬如導致鎢原子與氣體合併以形成 一諸如氟化鎢WF6或氯化鎢WC16等化合物且從容器加以移 除。 根據本發明的一實施例之另一型態，可以多種不同方 15 式來增長電極壽命及/或降低更換成本。譬如可藉由將螺紋 連接部包括在電極外壁上及陽極總成220上，以使内電極30 ® 製成螺絲狀。可將電極30製成譬如被外部裝置連續地供 給，其譬如為一延伸經過容器22壁之配件且其可具有螺紋 以供隨著時間而磨耗的電極移動之用並提供一用於容器的 20 壓力密封之曲折路徑。電極30可安裝在一具有對應螺紋的 套筒上。電極30可以複數個電極取代，譬如將該等複數個 電極排列成一陣列且燒烤以共用放電脈衝或譬如逐一地燒 ' 烤、或靜待未燒烤一段時間然後放入放電電路内。可選擇 電極30的形狀以利具有更長壽命。可利用熱電冷卻來代替 41 1312644 水冷。 現在參照第17A至Η圖，顯示根據本發明的一實施例之 另一雜屑遮蔽器。第17Α圖顯示根據本發明的一實施例之型 態的雜屑遮蔽器450之立體圖。雜屑遮蔽器450可包含一具 5有一開口之安裝環452,此開口界定一譬如在從一位於焦點 的電漿源擴展之光的一球型表面一部分上方延伸且覆蓋住 譬如近似1至2球面度之收集開孔。在開口中心可具有—穀 454，轂454具有包含槽455之側壁且譬如朝向焦點呈推拔 狀。安裝環452亦可具有槽453(如第17C圖所示）。 10 複數個譬如約0.25公分厚之薄型長鰭片456可分別在 安裝環452或轂454中接合式安裝至槽455及/或453。請瞭 解’可能只在安裝環452及轂454的一者或另一者中需要 槽’及/或槽可能是複數個短槽而非如第17a及17D圖所示延 伸於轂454長度之槽，且可結合特定的長鰭片456以譬如特 15別定位在轂454周圍’亦即各長鰭片456可具有一或多個沿 穀454推拔部外表面的半徑而垂直位移之特定的槽，其内可 接合一特定的長韓片456且只可接合該長縛片456。同理對 於安裝環452上之槽453亦成立。 在長鰭片456之間，根據本發明的一實施例之一型態， 20 言如形成一群組諸如五個鰭片且其由譬如兩個長縫片 456、一譬如位於相鄰兩個長鳍片456之間的中間鰭片458、 及兩短鰭片470所構成，其中各短鰭片470介於中間鰭片458 與相鄰長韓片456之間。 如第1.7E圖更詳細地顯示，長轉片456可具有一中間缩 1312644 片籤片接收槽457及一短鳍片籤片接收槽459。然後，中間 縛片可如第17圖所示具有一長韓片46〇，長韓片偏可譬如 接合一相鄰長鰭片456上之—各別的中間籤片接收槽“？。 . 並且，譬如可在中間鰭片458與相鄰長鰭片456之間安裝有 5 -對域片470。各短鰭片47〇可譬如具有一短鰭片籤片， 且短鰭片籤片可譬如接合式配合在一各別的相鄰長鰭片 456中之一各別的短鰭片籤片接收槽459内。中間鰭片458及 短鰭片470各亦可分別具有譬如分隔器/加強韓片條、472& 且其譬如可依照情形而倚靠抵住相鄰的各別中間鰭片458 10或長鰭片454。可看出，籤片46〇、46〇a、472、472a可譬如 沿著半徑延伸至譬如位於電漿匝夾32中心之雜屑遮蔽器的 焦點，而不會阻擋自匝夾32發射及穿過雜屑遮蔽器45〇之任 何顯著光量。如第17B圖的俯視圖所示，可看見籤片46〇、 460a ' 472、472a沿著各別半徑延伸至焦點。 15 雜屑遮蔽器450可具有分別被螺絲486及490固持在安 裝環上的位置中之一安裝環頂部鎖定環484及一安裝環底 部鎖疋環488 ’故不論槽453是否存在於安裝環452上均譬如 將各別鰭片454、456及470的安裝環面對側固持至安裝環 452。同樣地，轂454可具有一譬如可被一鎖定板螺帽482及 20 一底部鎖定螺帽483固持在位置中之頂部鎖定板480。 請瞭解’操作時，諸如0.25公分厚的薄型鰭片456、 * 458 ' 470可提供用來收集鍍覆在鰭片456、458、47〇表面上 的雜屑之作用，而互鎖籤片460、472及分隔器籤片460a、 472a可在結構群組中加強及均勻地分隔鰭片456'458及47〇 43 1312644 並防止譬如由於雜屑遮蔽器450的熱性暴露而造成撓屈。 根據本發明的一實施例之另一型態，已知可使用金屬 化合物作為一放電產生的電漿來源，且此粉末形式的諸如 錫等金屬化合物可能是輸送用以形成電漿的來源之可靠方 5 法。然而，對於輸送正球數量的此材料之可靠方法，申請 人已經發現此方法。根據本發明的一實施例之一型態，申 請人提出提供譬如具有概括盡量地小且譬如具有1微吋左 右直徑的粒子之粉末形式的金屬粒子。藉由將譬如錫等粉 末狀化合物吹入一脈衝電漿放電所使用之一氣體給料部 10 内，可使粉末輸送至電漿形成部位。給料部亦即載體氣體 譬如可能是一種如氖等譬如只具有載體作用之無害氣體， 或者譬如可能是一種亦有助於形成電漿及/或引發電漿放 電的崩潰之諸如氙等有效氣體。譬如將錫譬如霧化至給料 内之方法譬如可包括一種使給料氣體穿過或位於一數量的 15 諸如錫等粉末狀金屬上方之方法，此粉末狀金屬譬如可由 一壓電致動器加以授動且譬如加以搖晃而足以使細微的金 屬粉末變成在給料氣體流中經由氣體傳播'然後譬如經由 一中空陽極導引至電漿形成部位。 可瞭解利用此方式以譬如每單位時間的特定密度將一 20 經精密計量的數量之粉末狀材料***給料氣流内，可依需 要譬如藉由調節授動量（例如經由調節施加至壓電致動器 的電壓）來調節此數量。亦瞭解，也可藉由修改通過受攪動 粉末狀材料的給料氣流率來施加控制。可實行調節以譬如 限制雜屑形成於電漿中。亦可利用週期性中斷給料氣流（譬 44 1312644 如利用 辟又 何結構例如經由週期性注射-純給料氣 流而s如無任何插人材料)藉以實行調節。並且，譬如，如 果使較大粒子可譬如利用一網目來實行雜屑消減，此 網目的孔作止超過料敎尺相粒子給㈣體通過。 亚不⑽為本發明的上述實施例是本申請案所揭露之本 毛月僅有的心例’且這些實施例可作出熟習該技術與並 等效物者所瞭解之許多變化及修改，而仍位㈣請專利範10 = to cut the laser machine plus h for this, the towel has been found, for example, can be used behind a grid of material to use the 1 line mirror to produce - the debris cover (four) and its channel forward. In the configuration of the first level, it can be as good as: using the XLA double-chamber configuration laser processing of the applicant's assignee to provide the laser power for the defocus laser mechanical reinforcement, such as high laser power and short The field wavelength. The general construction shown in Fig. 16 may include, for example, a parallel laser beam 41 入射 incident from the right as shown in Fig. 18 (not necessarily all parallel). The laser beam may, for example, be first incident on a mask 406 that may be a lattice or a perimeter, such as to create a square or circular path. A mask made of W or Mg, for example, may be coated with a reflective coating on the side facing the laser beam 41, such as a film to enhance reflectivity and to prevent the mask 406 from being lasered. The beam 41G is deteriorated. The mask can also be tilted slightly to avoid reflection back into the laser amplifier/oscillator. Also, if the ''circumference (not shown) is made of a line having a circular cross section, the reflection problem can be reduced. The lens 404 or, more generally, the focusing optics may, for example, produce a convergence beamlet 414 that is an array of ones of the required push rates. A workpiece 420 can be, for example, a segment that is constructed or positioned to have a spherical solid body at the center of the focus 4〇2 20, which can be placed at the correct distance between the lens 404 and the laser focus 402. Even if the intensity of the laser beam 41 譬 is not sufficient to mechanically machine the overall debris shutter 400 once, for example, by using a scanned laser beam that traverses the mask 406, it may have the desired effect. That is, the overall construction of the masks 406, 404 and the workpiece 420 39 1312644 can be moved laterally and vertically in front of the laser beam 410 as shown in Fig. 16 and, for example, the passage can be machined continuously. For example, scanning above the overall surface of the control workpiece can be made faster than the passage 412, so no additional stress is induced in the workpiece portion due to partially completed drilling. In order to make the scan reproducible, it can be motorized and/or controlled, for example, by a piezoelectric actuator for driving the lateral movement of the overall construction 404, 406, 420 relative to the laser beam. . Alternatively, the laser beam can be scanned across lens 404 by, for example, a biasing optical device (not shown) for controlling the direction of incidence of the laser beam and the focus of the laser focus (not shown). The laser beam 410 10 can be controlled to have a high enough intensity to be sufficient to ablate the workpiece even when out of focus, while not damaging the lens 404 and the reflective mask 406. Therefore, in most cases, the short (ultraviolet) wavelength such as the laser beam 410 is most suitable. Applicants believe that it is a better way to place the mask 4〇6 in front of the lens 404 as shown in Fig. 16 to avoid damage to the lens by the laser sputter material from the mask 406 being incident on the lens. Sputtered materials are often emitted in the direction of incident laser light. Another option, such as increasing the laser intensity on the workpiece 420, may be, for example, a femtosecond laser machining using a 745 nm or 772 nm Ti-sapphire laser, and for example increasing its subsequent frequency to three Multiply or quadruple and then amplify this pulse using, for example, a KrF or ArF excimer laser discharge laser 20 amplifier. According to another aspect of an embodiment of the invention, an electrochemical reaction can be utilized to effect debris removal. Applicants would like to see that tungsten can be directly reacted with fluorine F2 or a fluorine-containing molecule such as nf3 at room temperature to form tungsten fluoride WF62. In accordance with an embodiment of the present invention, a source gas can be combined with a halogen gas such as fluorine or gas to form, for example, a metal halide, thereby removing excess tungsten atoms from the source 30, such as from tungsten electrode 30. In one example, for example, in the presence of reactive halogen gases, unwanted impurities • particles such as tungsten atoms, ions, and clusters are similarly evaluated. 6 or \^(:16, etc. Reaction of molecule 5 to form a volatile gas. In sharp contrast to pure tungsten particles with high adhesion on solid surfaces such as collector optics, these molecular compounds are on solid surfaces. It has a very low adhesion rate and is therefore preferentially pumped and removed from the container. For example, inserting this volatile gas from the output light emitted by the EUV plasma source can provide a tungsten atom that may be 10 undesired. An environment in which an increased atom collision occurs with the "washer" halogen gas. This can then, for example, cause the tungsten atoms to combine with the gas to form a compound such as tungsten fluoride WF6 or tungsten chloride WC16 and remove it from the container. According to another aspect of an embodiment of the present invention, electrode life and/or replacement cost can be increased in a variety of different ways, such as by including a threaded connection on the outer wall of the electrode and on the anode assembly 220. So that the inner electrode 30 ® is made into a screw shape. The electrode 30 can be made, for example, continuously supplied by an external device, such as an accessory that extends through the wall of the container 22 and It can be threaded for electrode movement over time and provides a tortuous path for the 20 pressure seal of the container. The electrode 30 can be mounted on a sleeve having a corresponding thread. The electrode 30 can be replaced by a plurality of electrodes For example, the plurality of electrodes are arranged in an array and grilled to share a discharge pulse or, for example, burned one by one, or wait for a period of not being grilled and then placed in a discharge circuit. The shape of the electrode 30 can be selected to have a longer length. Lifetime. Thermoelectric cooling may be utilized instead of 41 1312644 water cooling. Referring now to Figures 17A to ,, another debris shutter in accordance with an embodiment of the present invention is shown. Figure 17 shows a pattern in accordance with an embodiment of the present invention. A perspective view of a debris shutter 450. The debris shutter 450 can include a mounting ring 452 having an opening 5 that defines a portion of a spherical surface that extends from a source of plasma that is in focus. Extending and covering a collection opening, such as approximately 1 to 2 steradian. There may be a valley 454 at the center of the opening, the hub 454 having a sidewall containing the groove 455 and, for example, facing the coke The mounting ring 452 can also have a slot 453 (as shown in Figure 17C). 10 A plurality of thin long fins 456, such as about 0.25 cm thick, can be snap-fitted into the mounting ring 452 or hub 454, respectively. Slots 455 and/or 453. Please understand that 'may only need slots in one or the other of mounting ring 452 and hub 454' and/or the slots may be a plurality of short slots instead of as shown in Figures 17a and 17D A slot extending through the length of the hub 454 and may be associated with a particular long fin 456 to be positioned around the hub 454, such as each of the long fins 456, which may have one or more outer surfaces along the valley 454. A particular slot that is radially and vertically displaced can engage a particular length of Korean 456 and can only engage the long tab 456. Similarly, the groove 453 on the mounting ring 452 is also established. Between the long fins 456, according to one embodiment of the present invention, 20 forms a group such as five fins and is composed of, for example, two long slits 456, one for example, adjacent two The middle fin 458 between the long fins 456 and the two short fins 470 are formed, wherein each short fin 470 is interposed between the middle fin 458 and the adjacent long Korean sheet 456. As shown in more detail in Figure 1.7E, the long turn 456 can have an intermediate 1312644 chip receiving groove 457 and a short fin receiving groove 459. Then, the intermediate tabs can have a long Korean sheet 46〇 as shown in Fig. 17, and the long Korean sheets can be joined, for example, to the adjacent long fins 456--the respective intermediate label receiving grooves "?. For example, a 5-pair wafer 470 can be mounted between the intermediate fin 458 and the adjacent long fin 456. Each short fin 47 can have, for example, a short fin signature, and the short fin signature can be The mating type fits into one of the short fin support receiving grooves 459 of one of the adjacent adjacent long fins 456. The middle fin 458 and the short fin 470 may each have a separate spacer/strength. The strips, 472& and, for example, can be placed against the adjacent respective intermediate fins 458 10 or long fins 454 as appropriate. It can be seen that the tabs 46〇, 46〇a, 472, 472a can be as The radius extends to the focus of the debris shutter, such as at the center of the plasma clamp 32, without obstructing any significant amount of light emitted from the clamp 32 and through the debris shutter 45. As shown in the top view of Figure 17B It can be seen that the signatures 46〇, 460a '472, 472a extend along the respective radii to the focus. 15 The debris shutter 450 can have a difference One of the positions of the screws 486 and 490 held on the mounting ring is a ring top locking ring 484 and a mounting ring bottom locking ring 488'. Therefore, regardless of whether the groove 453 is present on the mounting ring 452, the respective fins 454 are used. The mounting rings of 456 and 470 are side-to-side retained to the mounting ring 452. Likewise, the hub 454 can have a top locking plate 480 that can be held in position by a locking plate nut 482 and a bottom locking nut 483, for example. Please understand that 'in operation, thin fins 456, * 458 ' 470, such as 0.25 cm thick, can be used to collect the debris deposited on the surfaces of fins 456, 458, 47, while interlocking signatures 460, 472 and divider strips 460a, 472a may stiffen and evenly divide fins 456' 458 and 47 〇 43 1312644 in a group of structures and prevent flexing due to thermal exposure of debris shutter 450, for example. In another version of an embodiment of the invention, it is known to use a metal compound as a source of plasma generated by a discharge, and a metal compound such as tin in the form of a powder may be a reliable source for transporting the source of the plasma. 5 method. However, right The applicant has found this method as a reliable method of delivering a positive number of such materials. According to one embodiment of an embodiment of the invention, the Applicant proposes to provide, for example, particles which are as small as possible and which have a diameter of, for example, about 1 micron. The metal particles in the form of a powder can be transported to the plasma forming portion by blowing a powdery compound such as tin into a gas feed portion 10 used for a pulse plasma discharge. The feed portion, that is, the carrier gas is, for example. It may be a harmless gas such as helium, such as a carrier-only gas, or, for example, an effective gas such as helium, which may also contribute to the formation of plasma and/or the collapse of the plasma discharge. For example, a method of atomizing a tin crucible into a feedstock, for example, may include a method of passing a feed gas through or over a quantity of 15 powdered metal such as tin, which may be imparted by a piezoelectric actuator. The shaking is sufficient, for example, to cause the fine metal powder to propagate through the gas in the feed gas stream' and then, for example, via a hollow anode to the plasma forming site. It can be appreciated that in this manner, a 20 metered amount of powdered material can be inserted into the feed gas stream at a particular density per unit time, as desired, for example by adjusting the amount of actuation (e.g., via adjustment to a piezoelectric actuator). Voltage) to adjust this amount. It is also understood that control can also be applied by modifying the feed gas flow rate through the agitated powdered material. Adjustments can be implemented to limit the formation of debris in the plasma, for example. The adjustment can also be effected by periodically interrupting the feed air flow (譬 44 1312644 if the structure is utilized, for example, via periodic injections - pure feed gas flow, without any intervening material). Also, for example, if larger particles can be used, for example, to perform debris reduction using a mesh, the pores of the mesh stop passing through the particles of the crucible phase to the (four) body. The above-mentioned embodiments of the present invention are the only examples of the present invention disclosed in the present application, and many variations and modifications are known to those skilled in the art and equivalents. Still in place (four) please patent

圍的範相，所中請的本發明範圍只被中請專利範圍加以 限制。 10【圖式簡單說明】 /第I顯* 一放電產生的電毁爾(軟X射線）光源及此 系統的一實施例之主要組件的示意圖； 第2圖顯示一用於產生贈EUV光之電極的一實施 之示意圖； 15 第3圖顯示一用於EUV光源之譬如適可自—光產生命 聚收集一發射圓錐中的光之收集器系統的—實施例； 第4圖顯示示意第3圖所示的一收集器的實施例之入射 操作的掠射角之橫剖視圖； 第5圖顯示本發明的一實施例，其包括才艮據本發明的— 20實施例之—電極更換系統； 第6圖顯示第4圖的實施例之近寫圖； 第7圖顯示第5及6圖的實施例，其中具有—適於更換電 極之問閥密封機構； 第8圖顯示根據本發明的一實施例之_用來製;告可有 45 1312644 效用於DPP之電極中的材料之程序的不意圖， 第9圖顯示根據本發明的一實施例之一中心電極（陽極） 的橫剖視圖； 第10圖顯示根據本發明的一實施例之一電極總成的立 5 體剖切圖； 第11圖顯示第10圖所示的電極總成的一部分及第9圖 所示的中心電極（陽極)之近寫立體剖切圖； 第12圖顯示第10及11圖所示的電極總成之俯視圖； 第12a至c圖顯示第10至12圖的電極總成之橫剖視圖， 10 其中剖面沿著第12圖的線A-A、B-B及C-C所取； 第13圖顯示第10至12c圖的電極總成之橫剖視圖，其中 包括一中心電極（陽極)總成； 第14圖顯示第10至13圖的總成之一冷板部分，其中顯 示根據本發明的一實施例之冷卻通路； 15 第15圖顯示根據本發明的一實施例之一雜屑遮蔽器的 立體圖； 第16圖顯示根據本發明的一實施例之一用於製造雜屑 遮蔽器的程序之示意圖； 第17A至Η圖顯示根據本發明的一實施例之另一雜屑 20 遮蔽器；及 第18Α及18Β圖顯示根據本發明的一實施例的型態產 生一電漿匝夾之模擬模型。 46 1312644 【主要元件符號說明】 20.. .放電產生的電漿(“DPP”） EUV及軟X射線光源 22…真空容器(殼體） 24.. .大型真空室(放電室） 26…金屬電極 28.. .外電極 30.. .内電極(陽極） 32.. .高密度電漿匝夾 34.. .電極梢部 36、300、400、450...雜屑遮蔽器 40.. .收集器 42.. .中間焦點 50.. .頻譜純度濾器 60.. .源輸送管 70.. .絕緣體 82、84...磁場 90.. .收集器轂 92.. .收集器轂延伸部 94.. .徑向支架 100.. .徑向收集器減阻物 102.. .殼套 102a...第一殼套部分 102b...第二殼套部分 104、104’…限制射線 1〇4”、104’”·.·部分光射線 106.. .接合部 122.. .伸縮節 126.. .密封凸緣 130…閘閥 132.. .室壁 134.. .凸緣 136.. .可更換式密封表面 139.. . DPP脈衝式功率單元，固 態脈衝功率模組(SSPPM) 140.. .DPP換向器 142.. .BN 粒子 150、208、306··.外表面 160.. .電極總成 162.. .外電極(陰極)總成 163.. .陰極内壁 164、312...壁 168.. .安裝螺絲 170.. .圓形冷板 172、176、178...入口 充氣室 173.. .冷卻劑入口 174 ' 184...冷卻通路 47 1312644 175...冷卻劑出口 316、318·.·弧 180…出口管 402…共同焦點 182.··入口管 404...聚焦透鏡 184...開放通路水坑道 406...格栅狀遮罩 206...預離子化器 410...雷射束 210...外電極(陰極)基底 412...正方形或圓形通路 212...陰極蓋 420...工件 214...入口歧管 452...安裝環 216...排放歧管 453、455...槽 218...中央開口 454·._ 轂 220...内電極(陽極)總成 456…薄型長鰭片 222...中心絕緣體 457...中間籤片接收槽 224...無彈性體電極絕緣體 458···薄型鰭片（中間鰭片） 230...無彈性體金屬C密封環 459...短鰭片籤片接收槽 231、486、490...螺絲 460、472…互鎖籤片 242...絕緣體扣夾 460a、472a...分隔器/加強鰭片 244...固定螺絲 470...短鰭片 250、254...電極内壁 480...頂部鎖定板 252...鎢殼套陽極的中空部 482...鎖定板螺帽 256...熱管隔板 483...底部鎖定螺帽 270...熱交換器的排放通路 484...安裝環頂部鎖定環 302...共面層 488...安裝環底部鎖定環 304.. .光通道 308.. .内表面 λ ...光的波長 48The scope of the invention is limited only by the scope of the patent application. 10 [Simple description of the drawing] / I. * Schematic diagram of an electric smash (soft X-ray) light source generated by a discharge and a main component of an embodiment of the system; Fig. 2 shows a method for generating EUV light A schematic diagram of an embodiment of an electrode; 15 Figure 3 shows an embodiment of an collector system for EUV light sources, such as a light collector system that collects light in an emission cone; Figure 4 shows a schematic third Figure 6 is a cross-sectional view showing the grazing angle of the incident operation of the embodiment of a collector; Figure 5 is a view showing an embodiment of the present invention comprising an electrode exchange system according to the embodiment of the present invention; Figure 6 shows a close-up view of the embodiment of Figure 4; Figure 7 shows an embodiment of Figures 5 and 6 with a valve sealing mechanism adapted to replace the electrodes; Figure 8 shows a Figure 1 according to the present invention. The embodiment is used for the production; it is not intended to have a procedure for the material used in the electrode of the DPP, and FIG. 9 is a cross-sectional view showing the center electrode (anode) according to an embodiment of the present invention; Figure 10 shows one of the embodiments in accordance with the present invention A vertical sectional view of the electrode assembly; Fig. 11 shows a close-up perspective view of a portion of the electrode assembly shown in Fig. 10 and a center electrode (anode) shown in Fig. 9; A top view of the electrode assembly shown in Figs. 10 and 11; and Figs. 12a to c are cross-sectional views of the electrode assembly of Figs. 10 to 12, wherein the cross section taken along lines AA, BB, and CC of Fig. 12 Figure 13 is a cross-sectional view showing the electrode assembly of Figures 10 to 12c, including a center electrode (anode) assembly; and Figure 14 is a view showing one of the cold plate portions of the assembly of Figures 10 to 13, wherein the display is based on Cooling path of an embodiment of the present invention; 15 Figure 15 shows a perspective view of a debris shutter according to an embodiment of the present invention; Figure 16 shows one of the embodiments for manufacturing a dust mask according to an embodiment of the present invention. A schematic diagram of a program of a device; a 17A to a block diagram showing another chip 20 shader according to an embodiment of the present invention; and 18th and 18th views showing a pattern of a plasma according to an embodiment of the present invention. The simulation model of the clip. 46 1312644 [Explanation of main component symbols] 20.. Plasma generated by discharge ("DPP") EUV and soft X-ray source 22... Vacuum vessel (housing) 24. Large vacuum chamber (discharge chamber) 26... Metal Electrode 28: external electrode 30.. internal electrode (anode) 32.. high-density plasma clamp 34.. electrode tip 36, 300, 400, 450...dust shutter 40.. Collector 42.. Intermediate Focus 50.. Spectrum Purity Filter 60.. Source Delivery Tube 70.. Insulator 82, 84... Magnetic Field 90.. Collector Hub 92.. Collector Hub Extension Section 94.. Radial Bracket 100.. Radial Collector Drag Reducer 102.. Shell 102a... First Shell Section 102b... Second Shell Section 104, 104'... Limiting Radiation 1〇4”, 104′”···Partial light ray 106.. joint portion 122.. telescopic joint 126.. sealing flange 130... gate valve 132.. chamber wall 134.. flange 136. . Replaceable sealing surface 139.. DPP pulsed power unit, solid state pulse power module (SSPPM) 140.. .DPP commutator 142.. BN particles 150, 208, 306 · external surface 160 .. . electrode assembly 162.. external electrode (cathode) assembly 163.. cathode inner wall 164, 3 12... wall 168.. mounting screws 170.. circular cold plates 172, 176, 178... inlet plenum 173.. coolant inlet 174 '184... cooling passage 47 1312644 175.. Coolant outlets 316, 318 · · arc 180 ... outlet tube 402 ... common focus 182. · inlet tube 404 ... focusing lens 184 ... open access water channel 406 ... grid-like mask 206. .. pre-ionizer 410...laser beam 210...outer electrode (cathode) substrate 412...square or circular passage 212...cathode cover 420...workpiece 214...inlet manifold 452...mounting ring 216...drain manifold 453,455...slot 218...central opening 454·._ hub 220...internal electrode (anode) assembly 456...thin long fin 222. .. center insulator 457... intermediate chip receiving groove 224... non-elastic body electrode insulator 458 · thin thin fin (middle fin) 230... non-elastic metal C sealing ring 459... short Fin-chip receiving grooves 231, 486, 490... screws 460, 472... interlocking tabs 242... insulator clips 460a, 472a... separators/reinforcing fins 244... fixing screws 470. .. short fins 250, 254... electrode inner wall 480... top locking plate 252... tungsten casing Hollow portion 482 of the anode... Locking plate nut 256... Heat pipe baffle 483... Bottom locking nut 270... Heat exchanger discharge passage 484... Mounting ring top locking ring 302... Coplanar layer 488... Mounting ring bottom locking ring 304.. Light channel 308.. . Inner surface λ ... wavelength of light 48

Claims (1)

L3 12644第94135161號專利申請案申請專利範圍修正本| 97.07.23 • 9V7· I3 Ώ修(更)正本| 十、申請專利範^ ~^ 1. 一種包含一電極脈衝功率源之放電產生的電漿EUV 源，其包含：L3 12644 Patent No. 94135161 Patent Application Amendment | 97.07.23 • 9V7· I3 Ώ修(更)本本|十、申请专利范^~^ 1. A discharge generated by an electrode containing a pulse power source Pulp EUV source, which contains: 10 1510 15 一脈衝定型可飽和電感器，其包含在該脈衝功率模 組的室階級中而可操作以將輸送至該等放電電極的脈 衝波形加以定型，其中該放電脈衝在該放電的轴向跑出 階段期間由一適度電流及該放電的徑向壓縮階段期間 之一峰值所構成。 2.如申請專利範圍第1項之電漿EUV源，進一步包含： 該放電脈衝的脈衝波形包含該徑向壓縮階段期間 之一電流流且其至少為該轴向跑出階段期間對於該等 電極的電流之三倍。 3. 如申請專利範圍第1項之電漿EUV源，進一步包含： 該放電脈衝的脈衝波形包含該徑向壓縮階段期間 之一電流流且其至少為該軸向跑出階段期間對於該等 電極的電流之二到五倍。 4. 一種放電產生之電漿EUV光源，其包含： 一 EUV光產生室； 2〇 一源氣體，其包含在該產生室中； 一緩衝氣體，其包含在該室中具有比該源氣體更低 之分子量； 一渴輪分子泵，其具有一連接至該產生室之入口且 可操作以自該室優先泵送比該緩衝氣體更多之該源氣 49 1312644 體。 5.如申請專利範圍第4項之電漿EUV光源，進一步包含:該 渦輪分子泵具有經過選擇可優先泵送較高分子量分子 之内部間隙、葉片角度及速度。 5 6.如申請專利範圍第4項之電漿EUV光源，進一步包含： 該渦輪分子泵以所泵送氣體的原子速度為基礎來 優先泵送。a pulse-shaped saturable inductor included in a chamber of the pulse power module operable to shape a pulse waveform delivered to the discharge electrodes, wherein the discharge pulse is in an axial run-out phase of the discharge The period consists of a moderate current and one of the peaks during the radial compression phase of the discharge. 2. The plasma EUV source of claim 1, further comprising: the pulse waveform of the discharge pulse comprising one of the current flows during the radial compression phase and at least for the axial runout phase for the electrodes Three times the current. 3. The plasma EUV source of claim 1, further comprising: the pulse waveform of the discharge pulse comprising one of the current flows during the radial compression phase and at least for the axial runout phase for the electrodes Two to five times the current. 4. A discharge generated plasma EUV light source comprising: an EUV light generating chamber; a source gas contained in the generating chamber; a buffer gas contained in the chamber having more than the source gas Low molecular weight; a thirst wheel molecular pump having an inlet connected to the generating chamber and operable to preferentially pump more of the source gas 49 1312644 from the chamber than the buffer gas. 5. The plasma EUV source of claim 4, further comprising: the turbomolecular pump having an internal gap, vane angle and velocity selected to preferentially pump higher molecular weight molecules. 5 6. The plasma EUV light source of claim 4, further comprising: the turbomolecular pump preferentially pumping based on the atomic velocity of the pumped gas. 7. 如申請專利範圍第5項之電漿EUV光源，進一步包含： 該渦輪分子泵以所泵送氣體的原子速度為基礎來 10 優先泵送。 8. 如申請專利範圍第4項之電漿EUV光源，進一步包含： 該渦輪分子泵不包含分子阻力階級。 9. 如申請專利範圍第5項之電漿EUV光源，進一步包含： 該渦輪分子泵不包含分子阻力階級。 15 10.如申請專利範圍第6項之電漿EUV光源，進一步包含：7. The plasma EUV light source of claim 5, further comprising: the turbomolecular pump pumping preferentially based on the atomic velocity of the pumped gas. 8. The plasma EUV light source of claim 4, further comprising: the turbomolecular pump does not include a molecular resistance class. 9. The plasma EUV light source of claim 5, further comprising: the turbomolecular pump does not include a molecular resistance class. 15 10. The plasma EUV light source of claim 6 of the patent scope further comprises: 該渦輪分子泵不包含分子阻力階級。 11. 如申請專利範圍第7項之電漿EUV光源，進一步包含： 該渦輪分子泵不包含分子阻力階級。 12. —種放電產生之電漿EUV光源，其包含： 20 一經調整的導電性電極，包含： 一差異性摻雜的陶瓷材料，其摻雜在一第一區 中以至少選擇導電性並摻雜在一第二區中以至少 選擇導熱性。 13. 如申請專利範圍第12項之電漿EUV光源，進一步包含： 50 1312644 10 15The turbomolecular pump does not contain a molecular resistance class. 11. The plasma EUV light source of claim 7, further comprising: the turbomolecular pump does not include a molecular resistance class. 12. A plasma EUV light source produced by a discharge comprising: an adjusted conductive electrode comprising: a differentially doped ceramic material doped in a first region to select at least conductivity and doped Miscible in a second zone to select at least thermal conductivity. 13. The plasma EUV light source of claim 12, further comprising: 50 1312644 10 15 20 該第一區係位於該電極結構的外表面上或與其接 近。 14. 如申請專利範圍第12項之電漿EUV光源，進一步包含： 該陶瓷材料為SiC且該摻雜物為BN。 15. 如申請專利範圍第13項之電漿EUV光源，進一步包含： 該陶瓷材料為SiC且該摻雜物為BN。 16. 如申請專利範圍第12項之電漿EUV光源，進一步包含： 該陶瓷材料為氧化鋁且該摻雜物為BN。 17. 如申請專利範圍第13項之電漿EUV光源，進一步包含·· 該陶瓷材料為氧化鋁且該摻雜物為BN。 18. 如申請專利範圍第12項之電漿EUV光源，進一步包含： 該陶竟材料為氧化IS且該摻雜物為一金屬氧化物。 19. 如申請專利範圍第13項之電漿EUV光源，進一步包含： 該陶莞材料為氧化铭且該摻雜物為一金屬氧化物。 20. 如申請專利範圍第18項之電漿EUV光源，進一步包含： 該摻雜物為SiO或Ti02。 21. 如申請專利範圍第19項之電漿EUV光源，進一步包含·· 該摻雜物為SiO或Ti02。 22. —種包含在一放電室内之放電產生的電漿EUV光源，其 包含： 一電極總成，其包含一安裝在一可移式電極總成安 裝座内之放電電極； 一可擴展的密封元件，其連接至該可移式安裝座且 可操作以將該電極總成從一更換位置移至一操作位置； 51 1312644 一密封機構，其可移式安裝在一密封機構殼體中且 可操作以當該可移式安裝座移至該更換位置時藉由從 一容置位置到一密封位置的運動來密封該放電室。 23. 如申請專利範圍第22項之電漿EUV光源，進一步包含： 5 該可擴展的密封元件為一伸縮節且該密封機構為 一閘閥。 24. —種放電產生之電漿EUV光源，其包含：20 The first zone is located on or adjacent to the outer surface of the electrode structure. 14. The plasma EUV light source of claim 12, further comprising: the ceramic material being SiC and the dopant being BN. 15. The plasma EUV light source of claim 13, further comprising: the ceramic material is SiC and the dopant is BN. 16. The plasma EUV light source of claim 12, further comprising: the ceramic material being alumina and the dopant being BN. 17. The plasma EUV light source of claim 13, further comprising: the ceramic material being alumina and the dopant being BN. 18. The plasma EUV light source of claim 12, further comprising: the ceramic material is oxidized IS and the dopant is a metal oxide. 19. The plasma EUV light source of claim 13, further comprising: the ceramic material is oxidized and the dopant is a metal oxide. 20. The plasma EUV light source of claim 18, further comprising: the dopant being SiO or TiO 2 . 21. The plasma EUV light source of claim 19, further comprising: the dopant being SiO or TiO 2 . 22. A plasma EUV light source comprising a discharge generated in a discharge chamber, comprising: an electrode assembly comprising a discharge electrode mounted in a movable electrode assembly mount; an expandable seal An element coupled to the movable mount and operable to move the electrode assembly from a replacement position to an operational position; 51 1312644 a sealing mechanism removably mounted in a sealing mechanism housing and Operating to seal the discharge chamber by movement from a receiving position to a sealing position when the movable mount is moved to the replacement position. 23. The plasma EUV light source of claim 22, further comprising: 5 the expandable sealing element being a telescopic joint and the sealing mechanism being a gate valve. 24. A plasma EUV light source produced by a discharge comprising: 一收集器，其包含相對一電漿匝夾位置排列之複數 個嵌套狀殼套構件，以形成自該電槳匝夾發射的EUV光 10 之入射反射器的掠射角；及 一溫度控制機構，其操作性連接至該收集器且可操 作以調節該等各別殼套構件的溫度以維持一與溫度有 關的幾何結構，以使來自該等各別殼套構件的入射反射 之掠射角達到最佳化。 15 25.如申請專利範圍第24項之電漿EUV光源，進一步包含：a collector comprising a plurality of nested casing members aligned relative to a plasma clamp to form a grazing angle of an incident reflector of EUV light 10 emitted from the paddle; and a temperature control a mechanism operatively coupled to the collector and operable to adjust a temperature of the respective casing members to maintain a temperature-dependent geometry for grazing incident incident reflections from the respective casing members The angle is optimized. 15 25. The plasma EUV light source of claim 24, further comprising: 該溫度控制機構包含一加熱器。 26. 如申請專利範圍第24項之電漿EUV光源，進一步包含： 該溫度控制構件包含一熱量移除器。 27. 如申請專利範圍第24項之電漿EUV光源，進一步包含： 20 各嵌套狀殼套構件，包含： 入射反射器元件的一第一掠射角，其收集自該 電漿匝夾發射的EUV光；及 入射反射器元件的一第二掠射角，其收集自該 入射反射器元件的第一掠射角發射之EUV光。 52 1312644The temperature control mechanism includes a heater. 26. The plasma EUV light source of claim 24, further comprising: the temperature control member comprising a heat remover. 27. The plasma EUV light source of claim 24, further comprising: 20 nested shell members, comprising: a first glancing angle of the incident reflector element, collected from the plasma jaw EUV light; and a second glancing angle of the incident reflector element that collects EUV light emitted from the first glancing angle of the incident reflector element. 52 1312644 1010 20 28. 如申請專利範圍第25項之電漿EUV光源，進一步包含： 各嵌套狀殼套構件，包含： 入射反射器元件的一第一掠射角，其收集自該 電漿匝夾發射的EUV光；及 入射反射器元件的一第二掠射角，其收集自該 入射反射器元件的第一掠射角發射之EUV光。 29. 如申請專利範圍第26項之電漿EUV光源，進一步包含： 各嵌套狀殼套構件，包含： 入射反射器元件的一第一掠射角，其收集自該 電漿匝夾發射的EUV光；及 入射反射器元件的一第二掠射角，其收集自該 入射反射器元件的第一掠射角發射之EUV光。 30. —種放電產生之電漿EUV光源，其包含： 一收集器，其包含相對一電漿匝夾位置排列之複數 個嵌套狀殼套構件，以形成自該電漿匝夾發射的EUV光 之入射反射器的掠射角；及 一機械控制機構，其操作性連接至該收集器且可操 作以機械式調整至少一個該等各別殼套構件以維持一 幾何結構使得來自該等各別殼套構件的入射反射之掠 射角達到最佳化。 31. 如申請專利範圍第30項之電漿EUV光源，進一步包含： 各嵌套狀殼套構件，包含： 入射反射器元件的一第一掠射角，其收集自該 電漿匝夾發射的EUV光； 53 131264420 28. The plasma EUV light source of claim 25, further comprising: each nested sheath member comprising: a first glancing angle of the incident reflector element, the collection being emitted from the plasma clamp EUV light; and a second glancing angle of the incident reflector element that collects EUV light emitted from the first glancing angle of the incident reflector element. 29. The plasma EUV light source of claim 26, further comprising: each nested casing member comprising: a first glancing angle of the incident reflector element collected from the plasma jaw EUV light; and a second glancing angle of the incident reflector element that collects EUV light emitted from the first glancing angle of the incident reflector element. 30. A plasma generated EUV light source comprising: a collector comprising a plurality of nested shell members aligned relative to a plasma clamp to form an EUV emitted from the plasma jaw a grazing angle of the incident reflector of light; and a mechanical control mechanism operatively coupled to the collector and operable to mechanically adjust the at least one of the respective sheath members to maintain a geometry such that The grazing angle of the incident reflection of the casing member is optimized. 31. The plasma EUV light source of claim 30, further comprising: each nested shell member comprising: a first glancing angle of the incident reflector element collected from the plasma jaw EUV light; 53 1312644 入射反射器元件的一第二掠射角，其收集自該 入射反射器元件的第一掠射角發射之EUV光；及 該機械控制機構包含一第一調整裝置，該第一 調整裝置可操作性連接至該入射反射器元件的第 5 —掠射角及入射反射器元件的一第二掠射角。 32. 如申請專利範圍第30項之電漿EUV光源，進一步包含： 該機械控制機構包含一壓電致動器。 33. 如申請專利範圍第31項之電漿EUV光源，進一步包含： 該機械控制機構包含一壓電致動器。 10 34.如申請專利範圍第32項之電漿EUV光源，進一步包含： 該壓電致動器包含一結合至各個各別殼套構件的 一外表面之生物形態壓電致動器。 35. 如申請專利範圍第33項之電漿EUV光源，進一步包含： 該壓電致動器包含一結合至各個各別殼套構件的 15 一外表面之生物形態壓電致動器。a second glancing angle of the incident reflector element that collects EUV light emitted from the first glancing angle of the incident reflector element; and the mechanical control mechanism includes a first adjustment device operable The fifth glancing angle is coupled to the incident reflector element and a second glancing angle of the incident reflector element. 32. The plasma EUV light source of claim 30, further comprising: the mechanical control mechanism comprising a piezoelectric actuator. 33. The plasma EUV light source of claim 31, further comprising: the mechanical control mechanism comprising a piezoelectric actuator. 10: The plasma EUV light source of claim 32, further comprising: the piezoelectric actuator comprising a biomorphic piezoelectric actuator coupled to an outer surface of each of the respective sheath members. 35. The plasma EUV light source of claim 33, further comprising: the piezoelectric actuator comprising a biomorphic piezoelectric actuator coupled to an outer surface of each of the respective sheath members. 36. —種放電產生之電漿EUV光源，其包含： 一EUV光收集器，其具有複數個反射器，各該等反 射器包含一反射表面且其各具有一反向表面；及 一偏壓電壓源，其電性連接至各該等複數個反射 20 器。 37. 如申請專利範圍第36項之電漿EUV光源，進一步包含： 一放電產生之電漿，其具有一電極性；及 選擇該偏壓電壓源的電壓使其具有與該電漿相反 的極性。 54 1312644 38. 如申請專利範圍第35項之電漿EUV光源，進一步包含： 各反射器的該反向表面具有一經粗化光製。 39. 如申請專利範圍第36項之電漿EUV光源，進一步包含： 各反射器的該反向表面具有一經粗化光製。 40. —種放電產生之電漿EUV光源雜屑遮蔽器，其包含： 一高能輻照光源，其包含一工作束； 一遮罩構件，其位於該工作束的路徑中且可操作以 將該工作束分成複數個次工作束；36. A plasma generated EUV light source, comprising: an EUV light collector having a plurality of reflectors, each of the reflectors comprising a reflective surface and each having a reverse surface; and a bias A voltage source electrically connected to each of the plurality of reflectors 20. 37. The plasma EUV light source of claim 36, further comprising: a plasma generated by the discharge having an polarity; and selecting a voltage of the bias voltage source to have a polarity opposite to the plasma . 54 1312644 38. The plasma EUV light source of claim 35, further comprising: the reverse surface of each reflector having a roughened light. 39. The plasma EUV light source of claim 36, further comprising: the reverse surface of each reflector having a roughened light. 40. A plasma generated EUV source debris shutter comprising: a high energy irradiation source comprising a working beam; a mask member positioned in the path of the working beam and operable to The work bundle is divided into a plurality of work bundles; 1010 20 一聚焦光學裝置，其位於該等複數個次工作束的路 徑中且可操作以將該等複數個次工作束聚焦至一焦點； 一工件，其介於該聚焦光學裝置與焦點之間，其中 因此使該等複數個次工作束各在該工件中鑽製一對準 於該焦點且朝向該焦點呈推拔狀之孔。 41. 如申請專利範圍第40項之電漿EUV光源雜屑遮蔽器，進 一步包含： 該工件包含具有與該焦點呈同心的一曲率半徑之 至少一表面。 42. —種放電產生之電漿EUV光源，其包含： 至少一電漿產生電極，其由一具有一中空内部之殼 套所形成； 一流界定構件，其位於該中空内部内沿著該中空内 部的一對相對内壁從一冷卻劑入口到一冷卻劑出口界 定一冷卻劑流徑。 43. 如申請專利範圍第42項之電漿EUV光源，進一步包含： 55 1312644 該流界定構件包含一用於將該等相對的内壁互連 之多孔區。 44. 如申請專利範圍第42項之電漿EUV光源，進一步包含： 該流界定構件包含一薄壁式圓柱形構件，該薄壁式 5 圓柱形構件使其冷卻劑入口連接至該薄壁式圓柱形構a focusing optical device positioned in the path of the plurality of secondary working beams and operable to focus the plurality of secondary working beams to a focus; a workpiece interposed between the focusing optics and the focus, Thus, the plurality of working beams are each drilled in the workpiece with a hole aligned with the focus and pushed toward the focus. 41. The plasma EUV source dust shield of claim 40, further comprising: the workpiece comprising at least one surface having a radius of curvature concentric with the focus. 42. A plasma generated EUV light source comprising: at least one plasma generating electrode formed by a casing having a hollow interior; a first-class defining member located within the hollow interior along the hollow interior A pair of opposing inner walls define a coolant flow path from a coolant inlet to a coolant outlet. 43. The plasma EUV light source of claim 42, further comprising: 55 1312644 the flow defining member comprising a porous region for interconnecting the opposing inner walls. 44. The plasma EUV light source of claim 42, further comprising: the flow defining member comprising a thin-walled cylindrical member having its coolant inlet connected to the thin walled Cylindrical structure 件與該中空内部的一内部内壁之間形成的通道且使其 冷卻劑出口連接至該薄壁式圓柱形構件與該中空内部 的外部内壁之間的一通道。 45. —種放電產生之電漿EUV光源，其包含： 10 至少一電極，其包含一具有高磁透性之材料而足以 使自該電極移除之該材料形式的雜屑能夠磁性偏向而 不沉積在一受保護的系統元件上。 46. —種EUV雜屑遮蔽器，其包含： 一安裝環，其具有一收集開口藉以界定一具有一焦 15 點之收集開孔；A passage formed between the member and an inner inner wall of the hollow interior and having a coolant outlet connected to a passage between the thin-walled cylindrical member and the outer inner wall of the hollow interior. 45. A plasma generated EUV light source comprising: 10 at least one electrode comprising a material having a high magnetic permeability sufficient to magnetically bias debris in the form of material removed from the electrode without Deposited on a protected system component. 46. An EUV debris shutter comprising: a mounting ring having a collection opening to define a collection opening having a focal point of 15; 一轂； 複數個大鰭片，其接合式安裝至該轂及該安裝環； 及 至少一中間鰭片，其安裝在相鄰的大鰭片之間且在 20 相鄰的大鰭片之間接合式安裝至該轂或該安裝環，並包 含至少一支撐籤片且其沿著一延伸經過焦點之半徑而 延伸且接合式安裝在至少一該等相鄰大鰭片上之一籤 片接收槽中。 47. 如申請專利範圍第46項之EUV雜屑遮蔽器，進一步包 56 Ϊ312644a hub; a plurality of large fins that are operatively mounted to the hub and the mounting ring; and at least one intermediate fin mounted between adjacent large fins and interposed between 20 adjacent large fins Mounting to the hub or the mounting ring and including at least one support tab and extending along a radius extending through the focus and engagingly mounted in one of the signature receiving slots of the at least one of the adjacent large fins . 47. If the EUV debris shutter of claim 46 is applied, further package 56 Ϊ 312644 10 含： 該至少一中間鰭片包含一第一中間鰭片及一第二 中間鰭片，及； 至少一短鰭片，其在相鄰的中間鰭片之間接合式安 裝至該轂或該安裝環，並包含至少一支撐籤片且其沿著 一延伸經過焦點之半徑而延伸且接合式安裝在至少一 該等相鄰的中間鰭片上之一籤片接收槽中。 48. —種用於形成一放電產生之電漿之方法，其包含： 提供一作為用於粉末形式的金屬粒子形式產生的 放電之一源之金屬化合物，其中該等粒子包含在一給料 氣體中，藉由使該給料氣體穿過一數量受激發的粉末狀 材料以將該等粒子放置在該給料氣體内。10 includes: the at least one intermediate fin includes a first intermediate fin and a second intermediate fin, and: at least one short fin that is joint-mounted to the hub or adjacent to the adjacent intermediate fin The ring includes at least one support tab and extends along a radius extending through the focus and is matingly mounted in one of the signature receiving slots of the at least one of the adjacent intermediate fins. 48. A method for forming a plasma generated by a discharge, comprising: providing a metal compound as a source of a discharge generated in the form of a metal particle in powder form, wherein the particles are contained in a feed gas The particles are placed in the feed gas by passing the feed gas through a quantity of excited powdered material. 57 1312644 #年，/月f日雜：)正替換頁丨 七、指定代表圖： (一） 本案指定代表圖為：第（1 )圖。 (二) 本代表圖之元件符號簡單說明： 20.. .放電產生的電漿(“DPP”)EUV及 軟X射線光源 22.··真空容器(殼體） 24.. .大型真空室(放電室） 26.. .金屬電極 28.. .外電極 30.··内電極(陽極）57 1312644 #年, /月f日杂:) is replacing page 丨 VII. Designated representative map: (1) The representative representative figure of this case is: (1). (2) A brief description of the symbol of the representative figure: 20.. Plasma generated by discharge ("DPP") EUV and soft X-ray source 22. Vacuum container (housing) 24. Large vacuum chamber ( Discharge chamber) 26.. Metal electrode 28.. External electrode 30.··Internal electrode (anode) 36.. .雜屑遮蔽器 40.. .收集器 42.. .中間焦點 50.. .頻譜純度濾器 60.. .源輸送管 八、本案若有化學式時，請揭示最能顯示發明特徵的化學式：36.. .dust shutter 40.. Collector 42.. . Intermediate focus 50.. Spectrum purity filter 60.. Source delivery tube 8. If there is a chemical formula in this case, please reveal the best indication of the characteristics of the invention. Chemical formula: