TWI305659B - Substrate processing apparatus and substrate processing method - Google Patents

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1305659 九、發明說明： 【發明所屬之技術領域】 ·，於被處理純上供給處理㈣進行處理之技 .η ;轉_方式在基板上塗布處職之基板處理技術。 【先前技術】 中，十示】器⑴at panel di物y，)之製造過程 ίϊίΐϊϊΐ5 基板上以所望膜厚塗布抗_液。 所記I其i亍方，例如專利文獻1 i座:ϊίί爾讀嘴的如 隔，面使抗钱劑噴嘴於播认下之试小間 直之水平額）移料長邊方向垂 喷嘴之構成為:噴嘴本體形於基板上。該種抗钱劑 常小之微細徑(例如=成長或絲，亚使抗_液自口徑非 尺型抗_料邱如帶m當如該長 ，器人或輪送臂自台座取出，:J該基，由輪 ，，的基板藉由〜掃㉝於台座上。然 樣之塗布處理。 釗嘎！之卸描反覆進行與上述同 [專利文獻1]日本特開平1〇_ 156255 【發明内容】 [發明欲解決之問題] 要不是處理完 返非旋轉方式之抗飿劑塗布裝置之中 1305659 新來的基板無法搬入或載置於台:士為以g態， 維持為將抗_，嘴掃=;=理丄 ^將未處理基板搬人或裝載至台座上之動作加 -、士曰 1( C+Tln+T〇u〇，有難以縮短作業時間之問題。 本f明有鑑於如上述習知技術之問題 2板處理裝置、基板處理方法及基板處理程式 間。式於被處理基板上供給或塗布處理液之處理動作之作業^ 本發明之另一目的為，提供一種基板處理裝置、其 =基板處理程式，其能以上升輸送方式在被處理& ς 塗布不均之均勻膜厚的處理液之塗布膜。 社办成無 [解決問題之方式] 古達成上述目的，本發明之基板處理裝置，具有：台座，且 處理基板之面積為小之第i上升區域，且於前述第i上升、 ΐ: 對前述基板賦予大致均勾之上升力；基板輸送 第\ 往既定之基板輪送方向通過前述 ^上升區域;及處理液供給部，於前述基板通過前述第丨上 ’於基板覆蓋該區域大致全域之_，進行㈣述 之被處理面供給處理液之動作。 又，本發明之基板處理方法，係在台座上沿著輸送方向 列设置：被處理基板尺寸為大之搬入區域、較前述基板尺 t塗布ϋ域及較前述基板尺寸為大之搬出區域，藉由設置於前 述口^上面之多數喷出口所喷出之氣體之壓力使前述基板上升， 而於瞒塗布區域之中在該區域内之各位置對前述基板提供大致 均勻的上升力，於命述基板自前述搬入區域輸送到前述搬出區 為止之，送途中，於前述基板覆蓋前述塗布區域之大致全域的期 間，對前述基板之被處理面進行塗布處理液之處理。 ， 7 1305659 具有二板處理程式，係進行.·將被處理基板搬人上面 基板於上升所望-:紅搬入位ί的步驟;於前述台座上，使前述 位置隔著ί定距態’於前述基板前端到達距離前述搬入 :述台座上，使寸、#、其f位置為止，以第1速度輸送之步驟;於前 到達設定於前j狀態，於前述基板後端 以第2讳声置與則述弟1位置之間之第2位置為止， 理面塗布二：;於前述第2速度輸送中對前述基板之被處 度位結束後，使前述基板上升所望高 •於本於明，出认甘以£為止’以第3速度實施輸送之步驟。 布區域)之χ途中基板通過台座之第1上升區域（塗 之被處理面供給心4處: 始至結束為止的整個期間，於;=處宜理）’因此’自塗布處理開 區域（塗布區域）内之上升高度在第1上升 以一定膜厚形成處理液之塗又布L 地 ，之基板搬於 於基板;給部，於在輸送方向， 部附近之狀態，έ士束卢部位於第1上升區域之上游側端 佳為，在“ 形’基板輪送部較 定速輸送，且基板前端部輪送方向以較高速之 就處理液供給部之供f動作，較佳為使基板停止下來。 升區域内朝向基板之&=具有：噴嘴’於第i上 源，對該噴嘴供給處if液.及喷，2出處，液;處理液供給 喷嘴自w赠縣料之帛 8 1305659 ^ 喷鳴位置為止移動。該喷嘴可 垂直）之水平方向延伸之微出/口Hi方向為交又(例如 輸运方向為相反之方向，自第 動部可使嘴嘴於往 止，以較低逮之定速移動。較為 至，達第2喷嘴位置為 升區域下游側之端位置設定於第1上 之喷臂升降部，例如於第^ 置”、以使喷嘴升降移動 高度2降至與基板形成方之 或退避至到達上方之高度處理輕出用之高度位置上升 又’本發明之基板處理裝置中，w — 匕 氣體之喷出口，在台座之第1上^區域^為設有··喷出 吸入口，在台座之裳彳期叹置多數個；吸入氣體之 多數個；上糊部，控靖存在而設置 再者，依照一較佳態樣，於台座之輪 域之上游側設有使基板上升之第2上升ί域，二丄= 為較第1上升區域中之上上Π或中之上升高度較佳 了^升鎖’以端使基板支持^^上之搬 位置之間耕飾。钉方之綠置糾座上方之前進移動 之下輸送方向’在第1上升區域 =下械k有使基板上升之第3上升區域，於 有用以將基板搬出之搬出部。該第3 ;康二 ΐϊί 支持於台座上之搬人位置;及第2頂升銷 升降和使斜頂升銷於台座下方之原位置與台座上方之前進移 1305659 動位置之間升降移動。 依照一較佳態樣，基板輸送部呈 、 向為平行地延伸之方式置台^彻^ ’以”基板移動方 著該導執純m 1 &之早侧或兩側；滑動構件，可沿 式觸移動之i 側緣部可離合地保持。 σ σ上之中心部延伸，並將基板之 [發明之效果] 式，藉由如裝不m處理方/去或基板處理程 能以上 膜厚形成處理液之塗 ^反上供給或塗布處理液之處理動^之轉3於ΐ處理 :送方式’在基板上以無塗布不均之=日寸間，而且，心卜 【實施方式】 [實施發明之最佳形態] 圖說明本發明之較佳實施形態。 理系統。齡布顯影處 抗侧塗布、龍、清洗、 鄰接而設置之外部曝光裝置（未圖示&行/处理以與遠系統 站成大致分為：计站⑹咖、處理 設置於系統之-端部之卡g站（c/⑽且備. 送路 s =t°Y 具有能保持基板G之裝置，例^ 、’ ' θ4軸動作，並能將基板G交接給後述處理 10 1305659 站（P/S)12侧之輸送裝置38。 理部係自上述奸柳/⑽舰序地將清洗處 ··一二二—24及顯影處理部26，隔著基板中繼部23、 ，化于印洛液供給早元25及分隔體27横向配置成一列。 .私^先處理部&包含:2個擦磨清洗單元(SCR)28、上下2排之 (务 冷卻單靡观)3Q、加熱單元⑽犯及冷^^之 包含:非旋轉方式之抗_塗布單元(⑺肋、 3ΪΪΓϊ Γ42、上下2排型黏附/冷卻單元(AD/C0L)46、上 _下2排型加熱/冷卻單元(Hp/c〇L)48及加熱單元(Hp)5〇。 顯影處严部26:包含3個顯影單元⑽v)52、2個上下 加熱/冷卻單元⑽/咖脱及加鮮s(hp)55。 u 各ί理部22、24、26之中央部，在長邊方向設有輸送路36、 ΐ 38、54、6G沿著各輸送路36、5卜58而移動 並接k各處理相之各單元，而能進行基板(^之搬入/搬出或輸 ，於該紐，在各處理部22、24、26之中，於輸送路=、 5卜58之一側配置有液處理系之單元(SCR、CT、卿 侧配置有熱處理系之單元(HP、c〇L等）。 ’ μ 一 設置於系統另一端部之界面部（1/{?)14，在與處理站 之側設有延伸部（基板交接部）56及緩衝台座57，與 之側設有輸送機構59。該輸送機構59於沿γ方伸 板G父接至延伸部（基板交接部）56或相鄰之曝光裝置。 土 圖2顯示該塗布顯影處理系統中處理之步驟。首 (C/S)10之中，輸送機構2〇自台座16上既定之卡匣c中 交給處理站(P/S)12之清洗處理部22之輸送装置撕步 元^基板G首献紐搬4輕照粉冷卻單 兀(UV/COL)30，於取藝的紫外線照射單元(uv)以紫外線照射施 11 1305659 以乾式清洗，於接著之冷卻單元(c〇L)冷卻至既定溫度(步驟S2)。 該紫外線清洗主要除去基板表面之有機物。 基板G藉由擦磨清洗單元(SCR)28之一接受擦磨清洗處 ^ ’自基絲Φ除絲子狀之赌（倾S3)。縣清洗之後，基 ί G於加^單元(HP)32接受以加熱進行之脱水處理（步驟S4)，接 著於冷部單兀(C〇L)34冷卻至-定之基板溫度(步驟S5)。至此， 處理部22中’結束前處理，基板G藉由輸送裝置38透過 基板父接部23而輸送到塗布處理部24。 一於塗布處理部24之中，基板g首先被依序搬入黏附/冷卻單 兀(AD/C0L)46，於最前面的黏附單元(AD)接受疏水化處理 (_S)(步驟S6)，並於接著之冷卻單元((：〇1〇冷卻至 度（步驟S7)。 ^ 之後，基板G於抗蝕劑塗布單元(CT)4〇以非旋轉法被塗布抗 钱劑液’接著於賴乾料元(VD)42較以賴進行之乾燥處理 (步驟S8)。 其次丄基板G被依序搬入加熱/冷卻單元(Hp/c〇L)48，於最前 面的加熱單元(HP)接受塗布後之烘烤（預供）（步驟S9)，苴次於a 卻單元(COL)冷卻至-定之基板溫度(步驟_。又^後^ 烘烤也可使用加熱單元（HP)50。 /土布傻之 上述塗布處理之後，基板G由塗布處理部24之輪送妒置54 及顯影處理部26之輸送錢60而輸送到界面部（I/F)14\於 交接給曝絲置（步驟S11)。於曝歧置，基板G上抗侧進行既 定電路圖案之曝光。鎌，圖案曝光結束之基板G自曝光裝 回界面部（I/f〇14。界©部（1/1〇14之輪送機構59將自曝光裝置 反S3過延伸部％交接給處理站（P/S)12之顯影處理部 於顯影處理部26，基板G於顯影單元⑽v)52任一者接受 影處理（步驟S12)，接著依序搬入加熱/冷卻單元(Hp/c〇L)53之、 一，於最前面的加熱單元(HP)進行後烘（步驟S13)，其次於冷卻單 12 1305659 tl^COL)冷卻至一定之基板溫度（步驟S14)。於該後烘也可使用加 熱單元(HP)55。 於顯影處理部26完成一連串處理之基板G，藉由處理站 (P/S)12内之輪送裝置6〇、54、38返回至卡匣站（c/s)1〇，於此 由輸送機構20收納於任一-^匣C(步驟S1) 曰 一於該塗布顯影處理系統，例如塗布處理部24之抗姓劑塗布單 兀(CT)40可應用本發明。以下，就圖3〜圖19說明將本發明應 於抗蝕劑塗布單元(CT)40之一實施形態。 〜 圖3顯不該實施形態中抗蝕劑塗布單元(CT)4〇及減壓乾 兀（VD)42之全體構成。 ，、干 如圖3所示，於支持台或支持架7〇上，抗蝕劑塗布單元(c 減壓乾燥單it(VD)42於X方向以横向配置為—列。應接受塗布 新來的基板G，藉由輸送路51侧之輸送裝置54(® 1)，如 劑塗布單元 79、 取土I處理之基板G’措由被引導於支持台70上之導執 乾、移動之輸送臂74 ’如箭頭&所示’被轉送至減麈 iic減壓乾燥單元⑽42完成乾燥處理之基板g， 雨^路51側之輸迗裝置54(圖υ如箭頭Fc所示，被取走。 ===布單元(⑺4Q之構成為：具有在χ方向延長的台座 置在上i基板❻在同方向以平流輸送之狀態，由配 、、存，二、μ上方之長尺型抗蝕劑喷嘴78對基板G上供給抗蝕劑 塗布膜亡面(被處理面)形成-定膜厚之抗蝕劑 )早兀(CT)40内各邛之構成及作用詳述於後。 、咬广ΪΪ乾燥單元(VD)42具有:下腔室8。，為上面開口之盤狀或 ίΐίίϊίί狀ίΐ腔室（未圖示），為可氣密地緊誠喪合於 置下腔室8G大致為四角形，於中心部配 將，板G水平載置而支持之台座82，於絲之四個角落設 ^乳口 83。各排氣口 83透過排氣管（未 圖不）。於下腔錢被上腔室覆蓋之狀態，兩腔室内之 13 1305659 理空間藉由該真空泵可減壓至到達既定真办产。 :内更本發明—實施形態^劑塗布單元麵 .#作形態之抗_塗布單元(CT)4G中，台座76並非如習知 將基板G©定之魅㈣抛，而是作絲板上升台 座^ϋ將基古板0以线塵之力量上升於空中。而且，配置於台 if，之紐輸送部84,各以可離合地保持上升 ，_台__方向） 、:羊Ϊ來Γμ台=峨邊方向(X方向)，分割為5個區域 M2、Ms、M4、Ms(圖5)。左端之區域Ml為搬入區域， 來2板〇被搬入該區域Ml内之既定位置。；該搬:區 座π’上m置=(圖n之輸送臂接取基板G而裝載於台 p菩目^2°座下方之原位置與台座上方之前進移動位置之間， 有多數根(例如4根)可升降移動之頂升銷86。 遠專頂升銷86藉由使用例如空氣汽紅(未圖） 頂升鎖升降部85(圖13)而升降驅動。㈤為《«之搬入用 區域亦為上升紅基板輪送開始進行的區域，於該 G H二座上面，為了使基板G以所望之上升高度位置或上升 定的密度設有多數噴出高壓或正壓之壓縮空氣 區域Μι自台座76之上面看去之_ 二=需;;==如保持於⑽ 尺寸大於其輪向（)之中，較佳為搬入區域 板igf二之卜尺寸。再者，於搬入區軌，尚設有用以將基 伋匕對準台座76上之位置的調準部（未圖示）。 域，中心部之區域M3為抗钱劑液供給區域或塗布區 絲既定位置自上方之抗_喷嘴78 於ί二之供給。為了使基板G以所望之上升高度迅上升 “亥主布區域台座上面’以例如圖6所示之排列或分布圖案升， 14 1305659 =-定的密度絲対多數如賴 88及以負壓吸入空氣之吸入口 9〇。 ㈣工乳之噴出口 在此，使正壓之噴出口 88與負壓之吸人口 . 了使上升高度Hb以高精度保持於…定信Γ 雜配置係為 塗布區域^中之上(例5_)。也就是說， 升4Hb枝了喷嘴下端（流心）喊板上面 (/f理面）之間之間隔⑽如l_m)。該_ s 重要參數，必需以高精度維持‘定^ 該只細形恶之中，係猎由下列方式，維持 AH施加錢向上之力，並同相m ϋ入 «方向麟祕之尺=^=^^方正向下 方安定地形成如上述狹窄間隔3程度的餘 下1305659 IX. Description of the invention: [Technical field to which the invention pertains] - Technology for processing on the purely processed processing (4). η; The substrate processing technique of coating the substrate on the substrate. [Prior Art] In the manufacturing process of the display device (1) at panel di y, ϊ ΐϊϊΐ 涂布 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 It is said that it is a type I, for example, Patent Document 1 Block: ϊ ί ί 读 读 读 , , , , , , , , , ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί : The nozzle body is shaped on the substrate. The anti-money agent is usually small and has a small diameter (for example, = growth or silk, sub-resistance - liquid-to-caliber non-small type anti-material Qiu Ru as m as the length, the person or the wheel arm is taken out from the pedestal: J, the base, the substrate of the wheel, by the sweep 33 on the pedestal. However, the coating process is the same as the above [Patent Document 1] Japanese Patent Laid-Open No. 1 _ 156255 [Invention Contents] [Problems to be Solved by the Invention] If it is not the anti-tanning agent coating device that has been processed in the non-rotating manner, 1305659 new substrates cannot be moved in or placed on the table: the g-state is maintained in the g state, Mouth sweep =; = 丄 ^ The action of moving the unprocessed substrate or loading it onto the pedestal -, 士曰1 (C+Tln+T〇u〇, there is a problem that it is difficult to shorten the working time. The problem of the above-described prior art 2 sheet processing apparatus, substrate processing method, and substrate processing program. The operation of supplying or applying a processing liquid onto a substrate to be processed. Another object of the present invention is to provide a substrate processing. Device, its = substrate processing program, which can be processed in ascending transport mode涂 Applying a coating film of a treatment liquid having a uniform uniform film thickness. The method of solving the problem is achieved. The substrate processing apparatus of the present invention has a pedestal and the area of the processing substrate is small. a rising region, wherein the ith is raised, ΐ: providing a substantially uniform lifting force to the substrate; the substrate transporting direction passes through the rising region; and the processing liquid supply portion is on the substrate The operation of supplying the processing liquid to the surface to be processed described in (4) is performed by the above-mentioned "overlying the entire area of the substrate". Further, the substrate processing method of the present invention is provided on the pedestal along the transport direction column: The processing substrate has a large loading area, a coating area larger than the substrate width t and a carrying area larger than the substrate size, and the substrate is pressed by a pressure of a gas ejected from a plurality of ejection ports provided on the surface Rising, and providing a substantially uniform lifting force to the substrate at each position in the region in the region of the coating, the substrate is transported from the loading region to the loading region In the middle of the loading and unloading zone, during the period in which the substrate covers substantially the entire area of the coating region, the surface of the substrate to be treated is subjected to a coating treatment liquid. 7 1305659 has a two-plate processing program, which is performed. The substrate to be processed is moved to the upper substrate to be in the ascending position: the red is moved into the position ί, and the pedestal is placed at the front end of the substrate at a distance of the distance from the pedestal to the front end of the substrate: #, the step of transporting at the first speed until the f position; the previous arrival is set in the front j state, and the second position of the rear end of the substrate is set to the second position between the position of the first speaker and the second position. Surface coating 2: a step of raising the substrate after the completion of the position of the substrate in the second speed transfer, and the step of raising the substrate at the third speed . In the middle of the cloth area), the substrate passes through the first rising region of the pedestal (the coated surface is applied to the core 4: the entire period from the beginning to the end, at the position of ==). The height of the rise in the area is increased by the first step, and the coating liquid is formed to a certain thickness. The substrate is placed on the substrate, and the substrate is placed in the vicinity of the transport direction. Preferably, the upstream side end of the first rising region is transported at a constant speed in the "shaped" substrate transfer portion, and the processing direction of the processing liquid supply portion is performed at a higher speed in the direction in which the substrate distal end portion is rotated. Stopping. The area facing the substrate in the rising area has: the nozzle 'on the i-th source, the nozzle is supplied with the if liquid. and the spray, the 2 source, the liquid; the treatment liquid supply nozzle from the w. 1305659 ^ The movement of the squealing position. The nozzle can be vertically extended in the horizontal direction of the micro/port Hi direction. (For example, the transport direction is the opposite direction, and the mouth can be stopped from the first movement to Lower catching fixed speed movement. More up to the second nozzle position The end position of the downstream side of the rising region is set to the first upper boom raising and lowering portion, for example, in the first step, so that the nozzle lifting and lowering movement height 2 is reduced to the height of the substrate formation or retreat to the upper level. In the substrate processing apparatus of the present invention, the discharge port of the w- 匕 gas is provided in the first upper region of the pedestal, and the suction port is ejected, and is slid at the stage of the pedestal. Most of them; the majority of the inhaled gas; the upper paste part, the control is present and set up, according to a preferred aspect, on the upstream side of the wheel of the pedestal, there is a second rising ί domain for raising the substrate, = It is better to raise the height above the upper or middle of the first rising area. ^Leight lock 'ends the substrate to support the position between the moving parts. The nail is placed on the top of the seat. In the first ascending region=lower arm k, there is a third ascending region for raising the substrate, and the ejecting portion for carrying out the substrate is carried out. The third; Kang Erΐϊί supports the moving position on the pedestal; And the second top lift pin lifts and lifts the inclined top under the pedestal According to a preferred aspect, the substrate transporting portion is arranged to extend in parallel, and the substrate is moved to the guide. 1 & the early side or both sides; the sliding member can be held apart by the side edge of the movable touch i. The center portion of σ σ extends, and the substrate [effect of the invention] is The processing method of the film thickness or the substrate processing can be applied to the film thickness of the above-mentioned film thickness. The processing of the supply or coating of the processing liquid is reversed to 3, and the processing method is as follows: 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Management system. An external exposure device that is provided with anti-side coating, dragon, cleaning, and abutment at the development of the age cloth (not shown & line/process to be roughly divided into the far system station: the station (6) coffee, the processing is set at the end of the system The card station of the department (c/(10) and the device. The transmission path s =t°Y has a device capable of holding the substrate G, and the operation of the θ4 axis, and the substrate G can be transferred to the processing 10 1305659 (P) /S) The transport device 38 on the side of the 12th. The faculty is from the above-mentioned sinus sinensis/(10) ship order, and the cleaning unit, the 222-24, and the development processing unit 26 are separated by the substrate relay unit 23 The Lok liquid supply early 25 and the partition 27 are arranged horizontally in a row. The private processing unit & includes: 2 scrub cleaning units (SCR) 28, upper and lower rows (cooling single view) 3Q, heating The unit (10) is guilty of cold and contains: non-rotating type anti-coating unit ((7) rib, 3ΪΪΓϊ Γ 42, upper and lower 2 rows of adhesion/cooling unit (AD/C0L) 46, upper_lower 2 row heating/cooling unit (Hp/c〇L) 48 and heating unit (Hp) 5〇. Development section 26: contains 3 developing units (10) v) 52, 2 upper and lower heating/cooling units (10) / coffee and fresh s (hp) 55. u The central portion of each of the processing units 22, 24, and 26 is provided with a transport path 36 in the longitudinal direction, and ΐ 38, 54, and 6G are moved along the respective transport paths 36 and 5, and are connected to each of the processing phases. In the unit, the substrate (the loading/unloading or transporting of the substrate) can be performed, and among the processing units 22, 24, and 26, the unit of the liquid processing system is disposed on one side of the conveying path=5b58 ( The SCR, CT, and the side of the Qing are equipped with heat treatment units (HP, c〇L, etc.). ' μ is placed at the other end of the system (1/{?) 14 and has an extension on the side of the processing station. The portion (substrate delivery portion) 56 and the buffer pedestal 57 are provided with a transport mechanism 59. The transport mechanism 59 is connected to the extension portion (substrate interface portion) 56 or the adjacent exposure device along the gamma extension plate G. Figure 2 shows the steps of the processing in the coating and developing treatment system. In the first (C/S) 10, the conveying mechanism 2 is fed from the predetermined cassette C on the pedestal 16 to the processing station (P/S) 12 for cleaning. The conveying device of the processing unit 22 is torn to the substrate, the substrate G is the first to be moved, and the light is cooled by the ultraviolet irradiation unit (UV). Cleaning, cooling to a predetermined temperature (step S2) in the subsequent cooling unit (c〇L). The ultraviolet cleaning mainly removes organic matter on the surface of the substrate. The substrate G is subjected to scrub cleaning by one of the scrubbing cleaning unit (SCR) 28. ^ ' From the base wire Φ silk-like gambling (pour S3). After the county cleaning, the base ί G is added to the unit (HP) 32 to receive the dehydration treatment by heating (step S4), followed by the cold section The crucible (C〇L) 34 is cooled to a predetermined substrate temperature (step S5). Thus, in the processing unit 22, the pre-end processing is performed, and the substrate G is transported to the coating processing unit 24 by the transport device 38 through the substrate parent portion 23. In the coating processing unit 24, the substrate g is first sequentially loaded into the adhesion/cooling unit (AD/C0L) 46, and the first adhesion unit (AD) receives the hydrophobization treatment (_S) (step S6), and After the cooling unit ((: 〇1〇 cooling to degree (step S7). ^, the substrate G is coated with anti-money solution in a non-rotation method on the resist coating unit (CT) 4' followed by Laigan The material element (VD) 42 is dried by the drying process (step S8). Next, the substrate G is sequentially carried into the heating/cooling unit (Hp/c〇L) 48, and is coated on the frontmost heating unit (HP). After baking (pre-supplied) (step S9), the unit is cooled to a predetermined substrate temperature (step _. and then ^ after baking) can also use heating unit (HP) 50. / soil cloth After the above-described coating process, the substrate G is transported to the interface portion (I/F) 14 by the transfer device 54 of the coating processing unit 24 and the development processing unit 26, and is transferred to the exposure wire (step S11). In the exposure, the substrate G is exposed on the anti-side of the predetermined circuit pattern. 镰, the substrate G at the end of the pattern exposure is attached to the interface portion (I/f〇14. The transfer mechanism 59 of the crucible 14 transfers the anti-S3 over-extension portion % from the exposure device to the development processing portion of the processing station (P/S) 12 in the development processing portion 26, and the substrate G receives the image in either of the development units (10) v) 52. Processing (step S12), then sequentially moving into the heating/cooling unit (Hp/c〇L) 53, one for post-baking at the foremost heating unit (HP) (step S13), followed by cooling sheet 12 1305659 tl ^COL) is cooled to a certain substrate temperature (step S14). A heating unit (HP) 55 can also be used for the post-baking. The substrate G is processed by the development processing unit 26 by a series of processing stations (P/S) 12 The internal transfer devices 6〇, 54 and 38 return to the cassette station (c/s) 1〇, and are stored in any of the transport units 20 in any of the steps (step S1). For example, the present invention can be applied to an anti-surname coating unit (CT) 40 of the coating treatment unit 24. Hereinafter, an embodiment in which the present invention is applied to a resist coating unit (CT) 40 will be described with reference to Figs. ~ Figure 3 shows the overall configuration of the resist coating unit (CT) 4〇 and the reduced pressure dryness (VD) 42 in the embodiment. On the stage or the support frame 7, the resist coating unit (c decompression drying single it (VD) 42 is arranged in the horizontal direction in the X direction. The newly coated substrate G should be received by the conveying path 51 side. The conveying device 54 (® 1), such as the agent coating unit 79, the substrate I processed by the soil I treatment, is guided by the guide arm 70, which is guided on the support table 70, as shown by the arrow & The substrate g that has been transferred to the reduced iic decompression drying unit (10) 42 to complete the drying process, and the transfer device 54 on the side of the rain channel 51 (shown as arrow Fc) are taken away. === cloth unit ((7) 4Q is composed of: a pedestal with a pedestal extending in the χ direction placed on the upper substrate ❻ in the same direction, and a long-length resist above the distribution, storage, and second The configuration in which the nozzle 78 is applied to the substrate G on the surface of the resist coating film (the surface to be treated) to form a constant film thickness is described in detail below. The biting wide drying unit (VD) 42 has a lower chamber 8. It is a disk-shaped or ΐ ϊ ϊ ΐ ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The pedestal 82 is supported, and the nipple 83 is provided at the four corners of the wire. Each exhaust port 83 passes through an exhaust pipe (not shown). In the state where the lower chamber money is covered by the upper chamber, the 13 1305659 space in the two chambers can be decompressed by the vacuum pump to reach the established true production. In the present invention - the embodiment of the coating unit surface. # Form of the anti-coating unit (CT) 4G, the pedestal 76 is not as conventionally known as the substrate G© magic (four) throw, but as a silk plate rise pedestal ^ϋ The base plate 0 is raised in the air by the power of the line dust. Further, it is disposed in the table if, and the button conveying portion 84 is held in a movable manner, and is detachably held in a detachable manner, and is divided into five regions M2. Ms, M4, Ms (Fig. 5). The area M1 at the left end is the carry-in area, and the two sheets are moved into a predetermined position in the area M1. The movement: the seat π' is set to m = (the transfer arm of Figure n is taken from the substrate G and is placed between the original position below the seat of the p. (for example, 4) liftable top pins 86. The top lift pins 86 are driven up and down by using, for example, air-vapor red (not shown) jack-up lifts 85 (Fig. 13). The loading area is also the area where the rising red substrate is started. On the upper surface of the GH, a plurality of compressed air regions for ejecting high pressure or positive pressure are provided on the substrate G at a desired rising height position or a rising density. Seen from the top of the pedestal 76 _ 2 = need;; == If the size of (10) is greater than the direction of the wheel (), it is better to carry the size of the area plate igf two. In addition, when moving into the area rail, There is an alignment portion (not shown) for aligning the base to the position on the pedestal 76. The region, the region M3 of the central portion is the anti-money solution supply region or the predetermined position of the coating region from the top. The nozzle 78 is supplied by ί二. In order to make the substrate G rise rapidly at the desired rising height, The surface 'rises in an arrangement or distribution pattern such as shown in Fig. 6, 14 1305659 = - the density of the filaments is mostly as follows: and the suction port of the air is sucked into the air by a negative pressure. (4) The discharge port of the working milk is here The positive pressure discharge port 88 and the negative pressure suction population. The rising height Hb is maintained with high precision. The fixed arrangement is above the coating area ^ (Example 5_). That is, the 4Hb branch nozzle is raised. The lower end (fluid) shouts the upper (/) plane (10) such as l_m). The important parameter of the _ s must be maintained with high precision, which is determined by the following methods.保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持 保持

之尺寸小，例如以1/3〜1/4左右為佳。 I吊了車乂基板G 設於搬入區域Mi與塗布區域m3之間之中間區域他 3:輸中織G之上升高度位置自搬入區域“ 上升同度Ha(100〜150，）變化或過渡至塗布區域私 邮_)者。於該過渡區域M2内亦為，在台座76上^上^^ ϋ與吸广I90混雜配置。惟，吸入口 90之密度沿輪送方向逐漸 h 送中使基板G之上升高度逐漸地自Ha移動為Hb。 於塗布區域吣之下游側鄰之區域沁，為一過渡區 於輸送t使基板G之上升高度位置自塗布用之上升高度5〇 ，換為搬出用之上升高度He(例如⑽〜⑽"m)者。於該過渡區』 4之t座i面、’於輸送方向以與上述上游側之過渡區域⑽為對稱 之分布圖本，混雜配置有喷出口狀與吸入口卯。 台座76下游端（右端）之區域Ms為搬出區域。於抗蝕 元(CT)40接受塗布處理之基板G，自該搬出區域Ms内之既g位置 15 1305659 由輸送臂74(圖3)被搬出到下游側鄰之減歷乾燥單 J )。該搬出區域他成為與上述搬入區樹空間上 ·· 了使基板G自台座76上卸載而交接給輸送臂 :之雜置抑虹方之祕雜位置之間， 设有多數根(例如4根)可升降移動之頂升鎖92，並 =以一定之密度設有/數用以使基板G上升上述上 Λ si ί、原夕ί f 口 8 8。頂升鎖9 2藉由例如使用空氣汽缸(未圖示） 為驅出用之頂升銷升降部91(圖13)而升降驅動。 抗蝕劑喷嘴78包含於抗蝕劑液供給部，呈有長 之; 進驅動部79，使該支持於 又，用以變更或調整抗螺桿f冓構成。 井隆機谌sins ία ^ 之同度位置之附引導物之喷嘴 ==咖)’係設於例如連接支持體77與抗麵嘴π 96，之’基板輪送部84各具有：一對導轨 上以“_ 件⑽，在各導軌％ QR l ,± ^ 〇 」私動地文裝；輸迗驅動部1〇〇，於各導勅 ==8 二 .,±/v，甲向將基板G之左右兩侧緣部可離合地俘捭。 構成ί I ===直進型之義構’例如線二 ρ ”、°卩02各具有：吸附墊i〇4，以直空啜附力社入於 基板G之左右兩侧緣部之下面；彈菩 支持⑽:二减 部支持吸附墊104，並以滑㈣杜f持°Π06，以刖端 改變前端部之高度位置之方式mm，， 之間距成-列配置，塾支持部106將:吸附疋 16 1305659 藉此’各吸附塾104及墊支持部106可於獨立之高度位置（包含不 同之高度位置）將基板G安定地保持。 ·. 如圖7及圖8所示，於該實施形態中，墊支持部安裝於 一板狀之墊升降構件108,該墊升降構件ι〇8以可升降地安裝於滑 、動構件98之内側面。由裝载於滑動構件98之例如空氣汽缸^未圖 不）構成之墊促動器109(圖13)，能使墊升降構件1〇8於對應於較 基板G，上升向度位置為低之原位置（退避位置）與對應於基板〇 之上升高度健之前進雜位置（結合健）之間升降移動。 墊^ ^ ’各蘭墊舰在例如合成橡膠製之直方體形狀 狀ΐί喊有多數個吸人口 112。該等吸人口 112為狭缝 U成橡或ΐ形之小孔。於吸附墊104，連接有例 116 真空管114。該等真空管114之管路 116各連通於墊吸附控制部115(圖13)之直空 、墊吸附控制部H5(圖13)尚將真空管114之 於壓縮空氣源(未圖示)，當將吸附墊· 而對吸附 於保持部102，如圖4所示，鲈社盔 104及墊支持部1〇6為息較么為早側—列之真空吸附墊 成。但是，如圖10戶=，分離型或完全獨立型之構 118之-片彈簧板妒也可為—體型之構成，即以設有切口部 置單側一列之真空吸附^4列知度之塾支持部120而於其上配 如上所述，於厶庙 ^ 之中，關於屬於“ 76面，有多數之嘴出口 88。該實施形態 88，係將能使空氣嗔^之^^區^及搬出區域此之各喷出口 且，切換之噴出控制相對位置關係而各別 之内部者。 Z以爪里切換閥之形態配置在台座76The size is small, for example, preferably about 1/3 to 1/4. I hoisted the rutting board G is disposed in the middle area between the loading area Mi and the coating area m3. 3: The rising height position of the woven medium G is changed from the moving-in area "rise degree Ha (100~150,) or transition to In the transition area M2, in the transition area M2, the pedestal 76 is mounted on the pedestal 76. The density of the suction port 90 is gradually sent in the direction of the transfer to the substrate. The rising height of G gradually moves from Ha to Hb. In the region adjacent to the downstream side of the coating region 沁, the transition height of the substrate G is increased by 5 自 from the rising height of the coating G at a transition zone. For the rise height He (for example, (10) to (10) " m), in the transition zone, the i-plane of the t-seat, and the distribution pattern in the transport direction that is symmetric with the transition region (10) on the upstream side are mixed. The discharge port shape and the suction port 卯. The region Ms of the downstream end (right end) of the pedestal 76 is the carry-out region. The substrate G subjected to the coating treatment on the resist (CT) 40 is at the g position 15 1305659 from the carry-out region Ms. The transport arm 74 (Fig. 3) is carried out to the downstream side of the subtraction drying sheet J). In the out-of-area space, there is a plurality of roots (for example, four) between the space in which the substrate G is unloaded from the pedestal 76 and delivered to the transport arm: the miscellaneous position of the miscellaneous rainbow. The top lift lock 92 can be moved up and down, and is provided with a certain density to increase the substrate G by the upper Λ si ί, the original ί 口 mouth 8 8 . The lift lock 9 2 is used, for example, by using an air cylinder (not shown) is driven up and down for the lift pin lifting and lowering portion 91 (FIG. 13) for driving out. The resist nozzle 78 is provided in the resist liquid supply portion and is elongated; the drive portion 79 is driven In addition, it is used to change or adjust the anti-screw f冓 composition. The nozzle of the guide with the same position of the well sins ία ^ == coffee) is attached to, for example, the connection support 77 and the anti-nozzle π 96, the 'substrate transfer unit 84 has a pair of guide rails with "_ pieces (10), in each guide rail % QR l , ± ^ 〇" privately loaded text; Guide 敕==8 II., ±/v, the direction of the nail is to be captured by the left and right edges of the substrate G. Constituting ί I === straight-forward type structure 'for example, line two ρ ′′, ° 卩 02 each having: an adsorption pad i〇4, which is placed under the left and right edge portions of the substrate G with a straight space; Boss support (10): The second sub-portion supports the adsorption pad 104, and the sliding support (four) Du f holding ° Π 06, in the manner of changing the height position of the front end portion by the end of the mm, the distance between the columns and the column arrangement, the support portion 106 will: The adsorption 疋 16 1305659 can thereby hold the substrate G at a separate height position (including different height positions) by the respective adsorption 塾 104 and the pad support portion 106. As shown in FIG. 7 and FIG. In the form, the pad support portion is attached to a plate-like pad lifting member 108 that is detachably attached to the inner side surface of the sliding member and the movable member 98. The air cylinder is mounted on the sliding member 98, for example. The pad actuator 109 (Fig. 13) is configured to enable the pad lifting and lowering member 1 to 8 to correspond to the substrate G, and the position of the rising position is lower (retracted position) and corresponds to the substrate 〇 The height of the rise is high and the position of the front (combined with the health) moves up and down. Pad ^ ^ 'The various pad ships in For example, the shape of the rectangular body made of synthetic rubber 喊 喊 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数. The pipelines 116 of the vacuum tubes 114 are each connected to the straight space of the pad adsorption control unit 115 (Fig. 13), and the pad adsorption control unit H5 (Fig. 13) still places the vacuum tube 114 on a compressed air source (not shown). · For the adsorption to the holding portion 102, as shown in Fig. 4, the 鲈 盔 104 104 and the pad support portion 1〇6 are the vacuum suction pads of the early side-column. However, as shown in Fig. 10, the separation The type or fully independent structure 118-plate spring plate 妒 can also be configured as a body type, that is, the yoke support portion 120 having the vacuum adsorption and the four-column visibility provided on one side of the slit portion is provided thereon. As mentioned above, in the Yumiao Temple ^, it belongs to "76 faces, and there are a majority of mouth exports 88. In the eighteenth embodiment, each of the discharge ports of the air supply unit and the discharge port can be separated from each other by the discharge control relative positional relationship. Z is placed in the pedestal 76 in the form of a claw switching valve

於圖11，顯示—每A 制部122具有：間室出=13卩122之構成。該噴出控 4形成於台座76之内部，具有球面體形 17 1305659 ，面；及球狀之閥體126,設於該閥室124之中，為可移動的。 =至124之頂部及底部，各形成於錯直方向彼此相對的出口 ^及入口 124b。出口 124a連通於與該噴出控制部122對應之 路12=88。入口 124b連通於在台座76下部通過的麼縮空氣供給 於圖12,顯示台座76内壓縮空氣供給路128之配管圖案之一 如來自壓縮機等壓縮空氣源(未圖示）之壓縮空氣，流到外 己官130之中而導入於台座76内之壓縮空氣導入部ι32。導入 =壓，空氣導入部132之_空氣自此處分配到於分布於台座％ 内之多數壓縮空氣供給路128。 =11之中’閥室124之出口 124a周圍構成閥座。於該闕 pUf, 口 124&以放射狀延伸之溝部於周圍方向隔著既定 間隔（例如90。間隔）形成有多數個（4個）。藉此，即使間體126 ，黏或附著在閥座而堵塞出口 124a，來自齡124之壓縮空氣 能通過溝部124c而漏出於喷出口 88側。閥體126為較閥室124 之内徑小-倍或二倍之直徑之例如樹脂製球體，於球面下 受對應於人π 1施側空氣壓之触向上之力^，同時，在球 半部接X對應於出口 124a側空氣壓之垂直向下之力（反作用） 又，闕體i㈣應於其質量之重力Pg(定值），經常垂(直$二 用。閥體126對應於如上述垂直向上之力Pu及垂直向下 之差，而=閥室124内改變鉛直方向之位置（高度位置）。' 於該實施形態，如圖11所示，對應於各喷出口 88之上方3 該，口 88正下方之喷出控制部122，能於第1 位置與^ 2位置任-者之間切換：第i位置為閥室124内之 126之咼度位置緊黏於出口 124a側之閥座之位置，第2位晉在一白 該閥座離開而上升於閥室124内之狀態之位置。 … 亦即，於各喷出口 88之上方（嚴格地說，為設定上升 以下之接近距離)有基板G時，由於來自基板G之反侧，使^ 出口 88附近或其正下方之閥室124之出口 _附近之空氣^ 18 1305659 兩，使彳于，用於閥體126之垂直向下之力（尤其是pD)與垂直向上 之力Pu相等或稍大’並且閥體126自出口馳侧之閥座分離。藉 此二出口 12ja成為開的狀態，自入口 124b導入閥室124之壓縮 空氣以大流量貫穿出口 124a而自噴出口 88喷出。 、^上所述，藉由形成於台座76上面之多數喷出口 88及用以 對該等β供給上升力發生用之壓縮空氣之壓縮供給源、外部配管 130、壓縮空氣供給路128、喷出控制部122，及於台座76之區域In Fig. 11, it is shown that each A portion 122 has a configuration in which the compartment is out = 13 卩 122. The ejection control 4 is formed inside the pedestal 76 and has a spherical body shape 17 1305659, a surface; and a spherical valve body 126 disposed in the valve chamber 124 to be movable. = to the top and bottom of 124, each of which forms an exit ^ and an inlet 124b which are opposite to each other in the wrong direction. The outlet 124a is connected to the path 12=88 corresponding to the discharge control unit 122. The inlet 124b is connected to the condensed air passing through the lower portion of the pedestal 76, and is supplied to Fig. 12, and shows one of the piping patterns of the compressed air supply passage 128 in the pedestal 76, such as compressed air from a compressed air source (not shown) such as a compressor. The compressed air introduction unit ι32 introduced into the pedestal 76 is introduced into the foreign official 130. With the introduction of = pressure, the air from the air introduction portion 132 is distributed therefrom to a plurality of compressed air supply paths 128 distributed in the pedestal %. Among the =11, the valve seat is formed around the outlet 124a of the valve chamber 124. In the 阙pUf, a plurality of (four) grooves are formed in a radially extending groove portion at a predetermined interval (for example, a space of 90) in the peripheral direction. Thereby, even if the inter-body 126 adheres or adheres to the valve seat to block the outlet 124a, the compressed air from the age 124 can leak out of the discharge port 88 side through the groove portion 124c. The valve body 126 is a resin ball which is smaller or twice as large as the inner diameter of the valve chamber 124, and is subjected to a contact force corresponding to a human π 1 side air pressure under the spherical surface, and at the same time, in the ball half. The part X corresponds to the vertical downward force of the air pressure on the side of the outlet 124a (reaction). Further, the body i (4) should be at the mass of the mass Pg (fixed value), often hangs (straight $ two. The valve body 126 corresponds to The vertical upward force Pu and the vertical downward difference are the same as the vertical position (height position) in the valve chamber 124. In this embodiment, as shown in Fig. 11, corresponding to the upper side of each of the discharge ports 88 The discharge control unit 122 directly below the port 88 can be switched between the first position and the position of the ^2: the i-th position is the 126 position in the valve chamber 124 and is tightly adhered to the outlet 124a side. At the position of the valve seat, the second position is in a state where the valve seat is separated and rises in the valve chamber 124. That is, above the respective discharge ports 88 (strictly speaking, the setting is as follows) When there is a substrate G, the valve chamber 124 near or directly below the outlet 88 due to the opposite side from the substrate G The air near the exit _ 18 1305659 two, so that the vertical downward force (especially pD) for the valve body 126 is equal to or slightly larger than the vertical upward force Pu and the valve body 126 is free from the exit side. The valve seat is separated. The second outlet 12ja is opened, and the compressed air introduced into the valve chamber 124 from the inlet 124b is ejected from the discharge port 88 through the outlet 124a at a large flow rate, and is formed on the pedestal 76 by the above. The plurality of discharge ports 88 and the compression supply source for the compressed air for generating the supply of the β, the external pipe 130, the compressed air supply path 128, the discharge control unit 122, and the pedestal 76

Μ,、Ms、Μ4内與噴出口 88混雜形成之吸入口 9〇及用以對該等賦予 負壓吸入力之真空機構等，構成台座基板上升部134(圖13)，該 台座基板上升部134於搬入區域Μ!及搬出區域沁能使基板G有效 率地ΐΐ所望高度，於塗布區域M3用以使基板G以高精度地上升 於€又疋同度位置〇 於圖13之中’顯示該實施形態之抗餘劑塗布單元([τ)4〇中护^ 制系f構成。控制器136由微電腦構成，對單元内各部加以控制二 尤其是抗蝕劑液供給源93、喷嘴移動機構75、噴嘴升降機構幻、 台ί基板上升部134、輸送驅動部10Q、墊吸附控制部115、墊促 動1§ 109、搬入用頂升銷升降部85、搬出用頂升銷升 別動作及全體動作（順序）。 寻谷 其次，說明該實施形態之抗蝕劑塗布單元(CT)4〇中之塗 °於圖14〜圖19顯示塗布區域沁四周之塗布處理動作^ 控制器136將存放於例如光碟等記憶媒體之抗蝕劑塗布 程式讀取主記憶體並執行，並控式化之—連串塗布處理 虽未處理之新基板G由輸送裝置54(圖1)被搬入台座π 入區域Mi，則頂升銷86於前進移動位置接取該基板G。輪 54退曰出後，頂升銷86下降而將基板G下降至輸送用之高度位^， 也就是上升高度Ha(圖5)。接著，調準部（未圖示）作動，推芦盖 件（未圖示）自四方推壓上升狀態之基板G，使基板G定位於^座霉 76上。调準動作結束後，基板輸送部84之中的墊促動器1卯立即 19 1305659 地作動’使吸附墊104自原位置（退避位置）上升至前進移動位置 (結合位置）（UP)。吸附墊1Q4在此之前先開啟真空，以真空吸附 力以恰接觸地結合於上升狀悲之基板G之側緣部。吸附塾1〇4 |士 合於基板G之侧緣部後’調準部立即使推壓構件退避至既定位置。 其次，基板輸送部84於以保持部1〇2保持著基板G之側緣部 之狀悲’將滑動構件98自輸送起點位置往輸送方向（X方向）以較 高速之定速V]直進移動。於該第1階段（塗布處理前）之基板輸送 中’當基板G前部自搬入區域Μι通過過渡區域沁進入塗布區域沁， 則圖14所示之基板G之上升高度逐漸下降。其原因為，來自塗布 區域Ms内之吸入口 90之吸入力作用於基板G’並且伴隨著美 進入塗布區域M3，作用於基板全體之吸入力增大所致。延由者於^反基G ^之上升〶度之變化是在塗布處理前發生，對於塗布處理沒有 夕ΐ輸送方力，當基板〇之前端到達塗布區域M3之下游 =最，即塗布用之設定上升高度Hb(例如之m)之^^ 敍第丨暖之基錄送（目 f ^ Μ在塗布區域m3之下游側端部之正上方待機。了减Μ嘴 與基板G之間隔人=7出^之抗_液而使噴嘴流出口 一方而+也 凡王土住，之後，開始以正常的流量流出。另 ㈣開始第騎。再者，基板輸送 送，^較低速之定2階段，即塗布時之基板輸 错此’於塗布區域Μ3内，如㈣所示，基板G以水平姿勢往 20 1305659 向）以定速Vb移動，同時往與其相反之方向，長尺 27δ;面使抗鋪液R以—定流量成帶狀地流出面 之動▲，藉此自基板G之前端側朝向後端側形成抗侧液 域之μΛ。該塗布處理中，由於基板G维持覆蓋塗布區域此全 自啥方向移動’因此，於區域内之各位置均勻地受到來 吸入六主·垂直向上之上升力及來自吸入口 90之垂直向下之 偽将祕二二了之，上升力，於塗布區域仏及其附近能夠不上下 喷嘴78 上升^度仏穩定地維持水平姿勢。#此，於抗韻劑 佶<Ίηη二:？基巧之間之間隔S以高精度始終保持於設定 #111之狀態，貫施對基板G上之抗韻劑液塗布。 ，該實麵態，塗布處理中之基板輸送速度％射嘴移動速 係’也就是設定為’ 18，#所示基板〇之後 山達丨^·布區域M3之上游端附近之既定位置的同時，抗姓劑喷嘴 (圖3即，將兩速度Vb、Vn設定為：自塗布開始 〒），狀4至基板G後端到達上述既定位置為止所需時間Tg鱼 抗=贺嘴78到達同既定位置為止所需 :、 及塗布區域M3之尺寸分別為LH乂 滿足下式（1)之方式選定仏與Vn之比例即可。 TG=(LG-LM3)/Vb5 T78 = WV„ K78 /.(LG-LM3)/Vb=LM3/Vn ... Vn = Vb*W(LG-LM3) ...(1 ) 之上附與抗，喷嘴78同時到達塗布區域Ms '、 疋4置，則於抗蝕劑液供給部側，f嘴彳多動機 構75停止抗1虫劑噴嘴78之掃描，並且 抗·喷嘴78流出抗_液R。接著，如㈣所示喷 構81將抗侧噴嘴78往垂直上方提起而自基板G退^嘴升賴 /另基_送部84於基板6後端到達上述既定位琶 並將基板輸送速度由到目前為止之低速-換為高)速之ν基板於^ 21 1305659 階段之基板輸送，基板G被一 口氣輸送到達搬出部Ms。於此時， 如圖19所示’於基板G之後端部於塗布區域沁内自上述既定位 (塗布終點位置）往輸送方向（X方向）移動或通過時，上升高度自 Hb朝Ha逐漸地上升。其原因為，於塗布區域沁内自吸入口 9〇 ^基 板G作用之垂直向下之吸入力隨著基板G移動而逐漸地減少所土 致。由於遠基板G之上升高度變化發生於塗布處理後，故涂 布處理不致造成影響。 、主 如上，當基板G自塗布區域Ms通過過渡區域吣而輸送到達搬 出區域-内之輸送終點位置，則基板輸送部料停止第3階段之某 ^輸送。之後，墊吸附控制部115立即停止對吸附墊1〇4供給^ 广，同時整促動器1〇9使吸附墊1〇4自前進移動位置（結合晉、 Ϊ原避位置）下降，使吸附塾1Q4自基板以兩側端部分 離。此時，墊吸附控制部H5對吸附墊1〇4供給正壓（壓縮空氣）， ^速自基板G分離。另-方面，頂升銷92為了將基板G卸 CT座下方之原位置往台座上方之前進移動位置上升。 然後，搬出機，即輸送臂74接近搬出區域m5，自頂升销 ，取基板G而往台座76之外搬出。基板輸送部％將基板 =頂升銷92後，立即以高速返回搬入區域沁。於搬出區域-,士 桩ίΐ所5ίΐ之基板“皮搬出時，於搬入區域Ml，開始進行Γ 接叉下一塗布處理之新基板G的搬入、調準或輪送。 彳丁愿 述’於該實施形態中，在台座76上各对搬人區域见、 區域⑷’於該等各區域’依序傳送基板而進行 抗侧賴給動作、基缝出動作係於各區域 區域也所需時間㈤臟出°區丄域二:：= σ一之合計的塗布處理i個循環所需時間還要^豆: =且’由於拥由設於綠76上面之喷出Π 88所噴出氣I# 之屋力而使基板G浮在空中，並使上升之基板G於台座Μ上一= 22 1305659 2d由長尺型抗_噴嘴78對基板G上供給抗_液而塗布 =故能將塗布處理時長尺型抗_噴嘴78掃描之距離 豆。而且，由於抗蝕劑喷嘴78之掃描與基 有利。也就疋說長尺型抗钱劑噴嘴愈厚、重、長、大時愈 區域76之塗輕絲之途帽蓋大致該 結束之貫穿全處理時ϋ ΐ f 塗布處理開始至到達 ===設定値日(藉:使出 膜i之；’驗基板G上形成無塗布不均之一定 述實5 發明之較佳實施形態，但本發明不限定於上 述貫Μ场，於其技術思想之範圍内可做各種變形。 M t ’ 士述實施形態中，基板輸送部84之保持部102具有真 二夾持二之二4等但^，’也可為將基板G之侧緣部以機_(例 '、、墊專又，用以將墊104以離合自如地έ士人於其板 106'^^ 1〇8^^；σι〇9Γ ^ 形態== 作3、，士 ~r微二/土板G上面全體均勻地供給（塗布）抗钱劑液。 區ί安排基板G上之被處理面分割為多數區域而於各 2嘴’或於各區域獨立地設定處理液或膜厚等。 1 ί i I·、但本&明可應用㈣被處理基板上供給處理液之任 ’就本發明中之處理液而言，除了抗飯 ^ Ί °層間絶緣材料、介電體材料、配線材料等 23 1305659 ，布，，也可使賴影液或沖洗液等。本發明中，被處理基板不 =LCD基板，也可為其他平板顯示㈣基板、半導體晶圓、⑶ 基板、玻璃基板、光罩、印刷基板等。 【圖式簡單說明】 =顯示^發明可應用之塗布顯影處理系統之構成平 =顯1施形態之塗布顯影處理系統巾處理步驟流程 實施形g之塗布顯影4轉統巾抗軸塗布單元及 減昼乾燥早紅全體構紅略平自目。 ▲布早几及 圖4顯示貫施形態中抗姓劑塗布| 圖案例之座塗布區域中喷出口及吸入口之排列 -部形態之抗峨布單元中基板輸送部之構成的 之構獻抗蝕劑塗布單元中基板輪送部之保持部 構成!示實施形態之抗峨布單元中基板輸送部之塾部之 固1 〇顯示貫施形癌之抗钱劑塗希置分由且4c认 之—變形例之立體圖。 ^布早4基板輪送部之保持部 剖面Ξu顯示實施_之抗_塗布單元中仙控制部之構成之 成麵彻轉單…蝴之流路之構 圖。圖13顯示實施形態之抗_塗布單元中控制系之構成之方塊 圖14顯示實施形態之抗蝕劑塗布星 之一階段之略侧面圖。心布料之要部中塗布處理動作 24 1305659 圖15顯示實施形態之抗钱劑塗布單元之要部中 之一階段的略側面圖。 塗布處理動作 圖16顯示實施形態之抗蝕劑塗布單 之一階段之略側面圖。 元之要部中塗布處理動作吸入, Ms, 吸入4, and a suction port 9〇 formed by mixing with the discharge port 88, and a vacuum mechanism for applying a negative pressure suction force to the pedestal substrate ascending portion 134 (Fig. 13), the pedestal substrate ascending portion 134 is in the loading area 及! and the carrying-out area 沁 enables the substrate G to efficiently reach the desired height, and the coating area M3 is used to raise the substrate G with high precision to the position of the same degree. The anti-residue coating unit of the embodiment ([τ)4〇中护制系系系。 The controller 136 is composed of a microcomputer, and controls each unit in the unit, in particular, a resist liquid supply source 93, a nozzle moving mechanism 75, a nozzle lifting mechanism, a substrate lifting portion 134, a conveying driving portion 10Q, and a pad adsorption control portion. 115. The pad actuation 1 § 109, the loading top lifting pin lifting portion 85, the lifting top lifting pin lifting operation, and the overall operation (sequence). Next, the coating application unit (CT) of the embodiment will be described. The coating processing operation of the coating area is shown in FIGS. 14 to 19, and the controller 136 is stored in a storage medium such as a disc. The resist coating program reads the main memory and executes it, and controls the serialized coating process. Although the unprocessed new substrate G is carried by the transport device 54 (Fig. 1) into the pedestal π into the region Mi, the lift is performed. The pin 86 picks up the substrate G at the forward moving position. After the wheel 54 is retracted, the jacking pin 86 is lowered to lower the substrate G to the height level for conveyance, that is, the rising height Ha (Fig. 5). Next, the alignment unit (not shown) is actuated, and the slab (not shown) pushes the substrate G in the ascending state from the square to position the substrate G on the mold. After the alignment operation is completed, the pad actuator 1 in the substrate conveyance unit 84 is immediately activated by 19 1305659 to raise the adsorption pad 104 from the home position (retraction position) to the forward movement position (joining position) (UP). Before the adsorption pad 1Q4 is opened, the vacuum is first applied to the side edges of the ascending substrate G by vacuum suction force. After the adsorption 塾1〇4 | 合 is combined with the side edge portion of the substrate G, the alignment portion immediately retracts the pressing member to a predetermined position. Next, the substrate transporting portion 84 moves in a state where the holding portion 1〇2 holds the side edge portion of the substrate G, and moves the sliding member 98 straight from the conveyance starting position to the conveying direction (X direction) at a relatively high speed constant speed V]. . In the substrate transfer in the first stage (before the coating process), the rising height of the substrate G shown in Fig. 14 gradually decreases when the front portion of the substrate G enters the coating region by the transition region from the loading region. The reason for this is that the suction force from the suction port 90 in the coating region Ms acts on the substrate G' and the suction force of the entire substrate is increased as the beauty enters the coating region M3. The change in the rise temperature of the anti-base G ^ occurs before the coating process, and there is no transfer force for the coating process, when the front end of the substrate reaches the downstream of the coating region M3 = the most, that is, the coating Set the rising height Hb (for example, m) to the base of the heating base (the head f ^ 待机 stands by directly above the downstream end of the coating area m3. The gap between the nozzle and the substrate G is reduced. 7 out of the anti-liquid and make the nozzle flow out one side and + also the king earth, then, start to flow out at normal flow. The other (four) start the first ride. In addition, the substrate transport, ^ lower speed 2 In the stage, that is, the substrate is misplaced during coating, in the coating area Μ3, as shown in (4), the substrate G moves in a horizontal posture toward 20 1305659) at a constant speed Vb, and in the opposite direction, a long length 27δ; The anti-sand liquid R is caused to flow in a strip shape at a constant flow rate, thereby forming an anti-side liquid phase from the front end side toward the rear end side of the substrate G. In the coating process, since the substrate G maintains the entire coating direction of the coating application region, the position of the substrate is uniformly absorbed in the respective positions in the region, and the upward force from the six main vertical directions and the vertical downward direction from the suction port 90 are uniformly received. In the case of the coating area, the lifting force can raise the horizontal posture stably without raising the upper and lower nozzles 78 in the vicinity of the coating area. #此,于抗韵剂 佶<Ίηη二:? The interval S between the cores is always maintained at a state of setting #111 with high precision, and is applied to the anti-flooding liquid on the substrate G. In the actual surface state, the substrate transport speed % in the coating process is the same as the predetermined position near the upstream end of the substrate 〇 ^· cloth area M3 after the substrate 〇 is set to '18, # , anti-surname agent nozzle (Fig. 3, the two speeds Vb, Vn are set to: from the start of coating), the time required from the shape 4 to the rear end of the substrate G to reach the predetermined position Tg fish resistance = Hezui 78 arrives at the same time The position required for the position: and the size of the coating region M3 are respectively LH 乂 satisfying the ratio of 仏 and Vn in the manner of the following formula (1). TG=(LG-LM3)/Vb5 T78 = WV„ K78 /.(LG-LM3)/Vb=LM3/Vn ... Vn = Vb*W(LG-LM3) ...(1) When the nozzle 78 reaches the coating regions Ms' and 疋4 at the same time, the f-mouth multi-action mechanism 75 stops the scanning of the anti-insectant nozzle 78 on the side of the resist liquid supply portion, and the anti-nozzle 78 flows out. Liquid R. Next, as shown in (d), the spray structure 81 lifts the anti-side nozzle 78 vertically upward and retracts from the substrate G to the rear end of the substrate 6 to reach the above-mentioned position and the substrate. The conveying speed is transferred from the low speed-to-high speed to the high speed of the substrate so far. The substrate G is conveyed to the substrate at the stage of 21,305,659, and the substrate G is conveyed by one breath to the carry-out portion Ms. At this time, as shown in Fig. 19, the substrate G is When the end portion moves or passes through the above-described positioning (coating end position) in the conveying direction (X direction) in the coating region, the rising height gradually rises from Hb toward Ha. The reason is that the suction region is inhaled in the coating region. The vertically downward suction force of the action of the substrate G is gradually reduced as the substrate G moves. The rise height variation of the far substrate G occurs at the coating place. After that, the coating process does not cause any influence. As described above, when the substrate G is transported from the application region Ms through the transition region 到达 to the transport end position in the carry-out region, the substrate transport portion stops the transport of the third stage. Thereafter, the pad adsorption control unit 115 immediately stops the supply of the adsorption pad 1〇4, and the entire actuator 1〇9 lowers the adsorption pad 1〇4 from the forward movement position (in combination with the Jin, the original position). The adsorption 塾1Q4 is separated from the substrate at both end portions. At this time, the pad adsorption control unit H5 supplies a positive pressure (compressed air) to the adsorption pad 1〇4, and the velocity is separated from the substrate G. On the other hand, the lift pin 92 is provided. When the substrate G is unloaded from the original position below the CT seat to the upper position of the pedestal, the moving position is raised. Then, the unloading machine, that is, the transport arm 74 approaches the carry-out area m5, and the substrate G is taken out from the top lift pin and carried out to the outside of the pedestal 76. When the substrate = the top lift pin 92, the transport unit % immediately returns to the carry-in area at a high speed. In the case of the carry-out area, the substrate of the pile is removed, and when the skin is carried out, the next stage of the coating is started in the carry-in area M1. Handling of the new substrate G , Wheel alignment or send. In this embodiment, in the embodiment, each of the pair of moving areas is seen on the pedestal 76, and the area (4) 'in these areas' is sequentially transferred to the substrate, and the anti-side operation is performed, and the base sewing operation is performed. Time required for the area (5) Dirty area ° Area 2::= σ One of the total coating time required for i cycles ^^: = and 'Because of the squirting on the green 76 88 is sprayed with the gas I# to float the substrate G in the air, and the raised substrate G is coated on the pedestal =1 = 22 1305659 2d by the long-length anti-nozzle 78 to the substrate G. = It is therefore possible to apply a long-length anti-nozzle 78 to the distance of the bean during the coating process. Moreover, the scanning and base of the resist nozzle 78 are advantageous. In other words, the thicker, heavier, longer, and longer-healing area of the long-length anti-money agent nozzle is generally over the entire processing period. ΐ f coating process begins to arrive === The next day is set (by: making the film i; the preferred embodiment of the invention is not described in the substrate G.) However, the present invention is not limited to the above-described field, and the technical idea is In the embodiment, the holding portion 102 of the substrate conveying portion 84 has two or the like. However, the side edge portion of the substrate G may be machined. _ (example ',, pad special, to use the pad 104 to freely move the gentleman on its board 106' ^ ^ 1 〇 8 ^ ^; σι〇 9 Γ ^ form == for 3,, ~ ~ micro The entire surface of the second/earth plate G is uniformly supplied (coated) with the anti-money agent liquid. The area of the substrate G is divided into a plurality of regions, and the treatment liquid or film thickness is independently set in each of the two nozzles or in each region. Etc. 1 ί i I·, but this & clearly applicable (4) on the substrate to be treated to supply the treatment liquid, in terms of the treatment liquid in the present invention, in addition to anti-rice Ί ° Inter-insulation material, dielectric material, wiring material, etc. 23 1305659, cloth, can also be used as a liquid or rinse solution. In the present invention, the substrate to be processed is not = LCD substrate, and other flat panel display (four) substrate, Semiconductor wafer, (3) substrate, glass substrate, photomask, printed circuit board, etc. [Simplified description of the drawing] = Displaying the composition of the coating development processing system that can be applied in the invention = coating development processing system towel processing step The process of the implementation of the shape of the coating development of the 4 turns of the towel anti-axis coating unit and the reduction of dry and early red all the structure of the red slightly flat. ▲ cloth early and Figure 4 shows the application of anti-surname in the form of the application | In the coating area, the arrangement of the discharge port and the suction port, the configuration of the substrate transfer unit in the anti-snagging unit of the partial configuration, and the configuration of the holding portion of the substrate transfer unit in the resist application unit. The solid portion of the crotch portion of the substrate transporting unit in the unit shows the stereoscopic view of the anti-money agent coated with the anti-money agent, and is recognized by 4c. The section of the holding portion of the substrate 4 is shown. Implementation_anti-coating The composition of the control unit in the unit is completely converted to the composition of the flow path of the butterfly. Fig. 13 shows the structure of the control system in the anti-coating unit of the embodiment. FIG. 14 shows one of the resist coating stars of the embodiment. Figure 1 shows a schematic side view of one of the main parts of the anti-money agent coating unit of the embodiment. Figure 14 shows the resistance of the embodiment. A side view of one of the stages of the coating of the etchant. The coating process in the main part of the element

之一 之— 之一 圖17顯示實施形態之抗蝕劑塗 階段之略側面圖。 圖18顯示實施形態之抗蝕劑塗 階段之略側面圖。 圖19顯示實施形態之抗蝕 階段之略侧面圖。 土 布單元之要部中塗布處理動作 布單元之要部中塗布處理動作 布單元之要部中塗布處理動作One of them - Figure 17 shows a side view of the resist coating stage of the embodiment. Fig. 18 is a side elevational view showing the resist coating stage of the embodiment. Fig. 19 is a side elevational view showing the resist phase of the embodiment. Coating processing operation in the main part of the soil unit Coating processing operation in the main part of the cloth unit Coating processing operation in the main part of the cloth unit

【主要元件符號說明】 C 卡匣 ^ 基板 搬入區域 過渡區域 塗布區域 過渡區域 & 搬出區域 ^ 抗钱劑液 咖塗布膜 S間隔 10 卡匣站（C/S) 12 處理站（P/S) 14 界面部（I/F) 16 卡匣台座 輸送路 19輸送路 20 輸送機構 25 1305659 22 清洗處理部 23 基板交接部 24 塗布處理部 25 化學品溶液供給單元 26 顯影處理部 27 分隔體 28 擦磨清洗單元(SCR) 30 紫外線照射/冷卻單元(UV/COL) 32 加熱單元（HP) 34 冷卻單元（COL)[Main component symbol description] C card 匣 ^ Substrate loading area transition area Coating area transition area & Carry-out area ^ Anti-money agent liquid coffee coating film S interval 10 Card station (C/S) 12 Processing station (P/S) 14 Interface part (I/F) 16 cassette pedestal conveying path 19 conveying path 20 conveying mechanism 25 1305659 22 cleaning processing unit 23 substrate delivery unit 24 coating processing unit 25 chemical solution supply unit 26 development processing unit 27 separator 28 polishing Cleaning unit (SCR) 30 UV irradiation/cooling unit (UV/COL) 32 Heating unit (HP) 34 Cooling unit (COL)

36 輸送路 38 輸送裝置 40 抗蝕劑塗布單元(CT) 42 減壓乾燥單元(VD) 46 黏附/冷卻單元(AD/C0L) 48 加熱/冷卻單元(HP/C0L) 50 加熱單元（HP) 51 輸送路 52 顯影單元(DEV) 53 加熱/冷卻單元(HP/C0L) 54 輸送裝置 55 加熱單元（HP) 56 延伸部（基板交接部） 57 缓衝台座 58 輸送路 59 輸送機構 60 輸送裝置 70 支持台或支持架 72 導執 26 130565936 Conveying path 38 Conveying device 40 Resin coating unit (CT) 42 Decompression drying unit (VD) 46 Adhesion/cooling unit (AD/C0L) 48 Heating/cooling unit (HP/C0L) 50 Heating unit (HP) 51 Conveying path 52 Developing unit (DEV) 53 Heating/cooling unit (HP/C0L) 54 Conveying device 55 Heating unit (HP) 56 Extension (substrate interface) 57 Buffer pedestal 58 Conveying path 59 Conveying mechanism 60 Conveying device 70 Support Desk or support frame 72 guide 26 1305659

74 輸送臂 75 噴嘴移動機構 76 台座 77 支持體 78 抗蝕劑喷嘴 79 直進驅動部 80 下腔室 81 喷嘴升降機構 82 台座 83 排氣口 84 基板輸送部 85 搬入用頂升銷升降部 86 頂升銷 88 喷出口 90 吸入口 91 搬出用頂升銷升降部 92 頂升銷 93 抗蝕劑液供給源 94 抗钱劑液供給管 96 導軌 98 滑動構件 100 輸送驅動部 102 保持部 104 吸附墊 106 墊支持部 108 墊升降構件 109 墊促動器 110 墊本體 112 吸入口 27 1305659 114真空管 115墊吸附控制部 Π6 管路 118切口部74 transport arm 75 nozzle moving mechanism 76 pedestal 77 support 78 resist nozzle 79 straight drive unit 80 lower chamber 81 nozzle lift mechanism 82 pedestal 83 exhaust port 84 substrate transport unit 85 carry-in lift pin lift unit 86 jack-up Pin 88 Outlet port 90 Suction port 91 Lifting lift pin lifting portion 92 Top lift pin 93 Resist liquid supply source 94 Anti-money solution supply pipe 96 Guide rail 98 Sliding member 100 Transport drive unit 102 Holding portion 104 Adsorption pad 106 Pad Support portion 108 pad lifting member 109 pad actuator 110 pad body 112 suction port 27 1305659 114 vacuum tube 115 pad adsorption control portion Π 6 pipe 118 cutout portion

120 墊支持部 122 噴出控制部 124 閥室 124a 出口 124b 入口 124c溝部 126閥體 128壓縮空氣供給路 130 外部配管 132壓縮空氣導入部 134 台座基板上升部 136控制器120 pad support portion 122 discharge control portion 124 valve chamber 124a outlet 124b inlet 124c groove portion 126 valve body 128 compressed air supply path 130 external piping 132 compressed air introduction portion 134 pedestal substrate rising portion 136 controller

Claims (1)

1305659 十、申請專利範圍： 1. 一種基板處理裝置，包含： 台座’具有較被處理基板之面積為小之第1上升區域，且於 該第1上升區域内之各位置對該基板賦予大致均勻之上升力； 基板輸送部，使該基板於上升之狀態，沿著既定輸送方向通 過該第1上升區域； …處理液供給部，於該基板通過該第1上升區域之途中，覆蓋 大致全域之細，對絲板之魏理面進行供給處理液 *4如第1項之基板處理裝置，其中’該處理液 ㈣輸送方向中’當該基板之前端部位於該 域之下游侧端部附近之狀態，開二 板之後端雜於該第】^錄、、，°祕，並於該基 該處理液供給動作幻上升s域之上_端部附近之狀態，結束 止。狀下獅《部附近之既定位置時，錢基板 5·如申請專利範圍第1 中，該處理液供給部包含： 負中任一項之基板處理裝置，其 嘴嘴，；Jpiv含歹第1上, 將該處理㈣升__向該基板之被處理面，自上方 噴嘴移動部I在送給該處理嘴嘴，· 開始嘴出之第1喷作中，使該喷嘴由該處理液 置為止。 置移_該處理液噴⑽束之第‘ 29 1305659 6.如申m專利範圍第5項之基板處理^ /〜〜〜〜二 有朝著與該輸送方向交叉之水平方向划 ς*、’該噴嘴具 +該噴嘴移動部使該倾沿與該輸财出口，且 1喷嘴位置以定速移酬該第2喷嘴位置為止、。之方向自該第 嘴位7置震置。，其中，!噴 位置設定於該第近’該第2噴Ϊ 8.如申凊專利範圍第5項之基板處理裝置， 供給部具有使該喷嘴升降移動之喷嘴升降部。/、，。處理液1305659 X. Patent Application Range: 1. A substrate processing apparatus comprising: a pedestal having a first rising region that is smaller than an area of a substrate to be processed, and substantially uniformizing the substrate at each position in the first rising region The substrate transporting unit moves the substrate through the first rising region along a predetermined transport direction in a rising state; the processing liquid supply unit covers substantially the entire region while the substrate passes through the first rising region Finely, supplying the processing liquid to the Wei Li surface of the silk plate*4. The substrate processing apparatus according to item 1, wherein 'the processing liquid (four) is in the conveying direction' when the front end of the substrate is located near the downstream end of the domain In the state, after the second board is opened, the end is mixed with the first part, and the end of the processing liquid is supplied to the state near the _ end of the process illusion, and the end is terminated. When the lion is in a predetermined position near the department, the money substrate 5 is as in the first patent application scope, and the processing liquid supply unit includes: a substrate processing apparatus of any one of the negative, the mouth of the substrate, and the Jpiv containing the first The process (4) is raised to the processed surface of the substrate, and the nozzle is moved from the upper nozzle moving portion I to the processing nozzle, and the nozzle is discharged from the first nozzle. until. Shifting_The treatment liquid spray (10) bundle of the '29 1305659 6. The substrate treatment of the fifth paragraph of the application of the patent scope ^ / ~ ~ ~ ~ two have a horizontal direction *, ' toward the intersection of the transport direction The nozzle tool + the nozzle moving portion moves the tilting edge and the profit outlet, and the nozzle position is transferred to the second nozzle position at a constant speed. The direction is set from the first nozzle position 7. In the substrate processing apparatus of the fifth aspect of the invention, the supply unit has a nozzle lifting portion for moving the nozzle up and down. /,,. Treatment fluid 含：9·如申请專利範圍第項中任—項之基板處理裝置，包 噴出氣體之噴出口，於該台座之第i上升 混雜吸入口’在該台座之第1上升區域内以， f控制部’對通過該第丨上升區域之該基板，控 的垂直向上之壓力與由該吸入口施加的垂直向下之。 :〇.如申請專利範圍第U 3項中任一項之基板處理裝置，其 板上向在該第1上升區域之上游侧設有使絲 11.如申請專利範圍第10項之基板處理裝 直 ，第2上升區域中之上升高度較該第i上升區域中：上嚣； 為兩。 ^2.如申請專利範圍第10項之基板處理裝置，其中，於該第2 上升區域内，設有用以將該基板搬入之搬入部。 13·如申請專利範圍第12項之基板處理裝置，其中，該搬入 部包含： 夕數根之第1頂升銷’用以於該台座上之搬入位置將該基板 以銷前端支持著；及 1305659 { , V 〆-.、· —」 第ι頂升銷升降部，使該第ι 一一— =上/之前進移動=二=方之原位置 中，上申請專利範圍第1至3項中任—項之a板产鮮署，並 板上升之第 向在Λ 在該1 第狀基板處縣置，其巾，該基板 高。上和域之上升南度較在該第〗上升區域之上升高度為 r如中請專利範圍第14項之 上升^域内設有用以將該基板搬出之^部其中於5亥第3 部包含如申睛專利範圍第16項之基板處理裝置，其中，該搬出 以銷ίϊίΐί;2頂升銷，用以於該台座上之搬人位置將該基板 I在if 使該第2頂升鎖在該台座下方之原位置 與在5亥台座上方之前進移動位置之間升降移動。 中，n申第1至3項中任一項之基板處理裝置，其 平行ί:.，配置於該台座之單側或兩側，而與該基板之移動方向 滑動構件，可沿著該導軌移動； 輸送驅動部，驅動該滑動構件使其沿著該導執移動· 保持部，自該滑動構件朝向該台座之中心部將 之側緣部可離合地保持著。 ㈣將及基板 19. 一種基板處理方法’於一台座上沿著輸送方向，依 一列設置較被處理基板之尺寸為大之搬入區域、較該基板之尺 為小之塗布區域及較該基板之尺寸為大之搬出區域； 藉由自設於該台座上面之多數喷出口喷出之氣體之壓力使該 基板上升，而於該塗布區域在該區域内的各位置對該基板賦予= 31Included: 9) The substrate processing apparatus according to any one of the items of the scope of the patent application, wherein the ejection outlet of the gas is ejected, and the i-th rising mixed suction port of the pedestal is controlled in the first rising region of the pedestal, f The portion 'the vertical upward pressure of the substrate passing through the second rising region and the vertical downward pressure applied by the suction port. The substrate processing apparatus according to any one of the above-mentioned claims, wherein the substrate is provided with a wire 11 on the upstream side of the first rising region. Straight, the rising height in the second rising region is higher than the upper i-th rising region: upper; two. The substrate processing apparatus of claim 10, wherein the second rising region is provided with a loading portion for carrying the substrate. The substrate processing apparatus of claim 12, wherein the loading unit comprises: a first lifting pin of the plurality of bases for supporting the substrate with a pin front end at the loading position on the pedestal; 1305659 { , V 〆-., · —" The first TOP top lift lifting section, so that the first ι - one up / before the move = two = square original position, the upper patent application range 1 to 3 In the middle of the project, the board of the product is fresh, and the board is raised in the first place. The rising degree of the upper and the upper side is higher than the rising height of the rising area of the first rising area. For example, in the rising range of the fourth item of the patent range, there is a part for carrying out the substrate, which is included in the third part of the 5th The substrate processing apparatus of claim 16 , wherein the loading and unloading pin 2 is used to lift the substrate I in the position of the moving place on the pedestal The original position below the pedestal moves up and down between the moving position before the 5 hai pedestal. The substrate processing apparatus according to any one of items 1 to 3, wherein the substrate is disposed on one side or both sides of the pedestal, and the sliding member with the moving direction of the substrate is along the guide rail The transport drive unit drives the slide member to move along the guide movement/holding portion, and the side edge portion is detachably held from the slide member toward the center portion of the pedestal. (4) Substrate and substrate 19. A substrate processing method is disposed on a pedestal along a transport direction, and a loading area larger than a size of the substrate to be processed, a coating area smaller than a ruler of the substrate, and a substrate are disposed in a row. a large-sized carry-out area; the substrate is raised by the pressure of a gas ejected from a plurality of discharge ports provided on the pedestal, and the substrate is given to the substrate at each position in the region at the coating area = 31 月/<fh瞭(數正替換頁 1305659 致均勻的上升力， 板霜該搬人區域往該搬出區域輸送的途中，在該基 纽錢之綱，妨龍基权被 20.如申請專利範圍第19項之基板處理方法，1巾，於该汝 布處理中，使該基板沿該輪送方向以第j速度移動。 土 該淹^如申:青專利範圍第19或2Q項之基板處理方法，其中，於 理中’使對該基板之被處理面供給該處理液之位置，沿 送Ϊ向相反之方向’以較該第1速度為慢的第2速度， 2塗布區域之下游側端部之既定位置移動至上關端部之既定 22.如申請專利範圍第21項之基板處理方法，其中 ，於該塗 =結絲’使該基板沿著該輸送方向錄該第2速度為快的 弟3速度移動。 十一、圖式：Month/<fh (the number is positively replaced by page 1305659, resulting in a uniform lifting force, the board frost is moving to the carrying area on the way to the moving out area, in the base of the New Zealand money, the dragon base right is 20. If applying for a patent The substrate processing method of the 19th item, wherein the substrate is moved at the j-th speed in the direction of the rotation in the processing of the cloth. The soil is covered by the substrate of the 19th or 2Qth patent range. In the processing method, the position of the processing liquid supplied to the surface to be processed of the substrate is changed to the second speed which is slower than the first speed in the direction opposite to the feeding direction, and 2 is downstream of the coating area. The substrate processing method of claim 21, wherein the substrate is processed in the coating direction, wherein the substrate is recorded in the conveying direction. Fast brother 3 speed moves. XI, schema: