TWI304659B - Substrate for mounting light emitting element and manufacturing method thereof, light emitting element module and manufacturing method thereof, display apparatus, illumination apparatus, and traffic signal device - Google Patents
Substrate for mounting light emitting element and manufacturing method thereof, light emitting element module and manufacturing method thereof, display apparatus, illumination apparatus, and traffic signal device Download PDFInfo
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- TWI304659B TWI304659B TW095119604A TW95119604A TWI304659B TW I304659 B TWI304659 B TW I304659B TW 095119604 A TW095119604 A TW 095119604A TW 95119604 A TW95119604 A TW 95119604A TW I304659 B TWI304659 B TW I304659B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Description
1304659 九、發明說明： 明所屬技領域】 發明領域 本發明係有關於一種用以安裝發光二極體（以下記載 5為LED)等之發光元件安裝基板及其製造方法、於該基板安 裝發光元件而封裝之發光元件模組及其製造方法、使用該 發光元件模組之顯示裝置、照明裝置及交通信號機。 發明背景 10 習知在安裝led等發光元件而封裝之發光元件模組1. The present invention relates to a light-emitting element mounting substrate for mounting a light-emitting diode (hereinafter referred to as 5 LED) and a method of manufacturing the same, and mounting a light-emitting element on the substrate The packaged light-emitting element module, the method of manufacturing the same, the display device using the light-emitting element module, the illumination device, and the traffic signal. BACKGROUND OF THE INVENTION 10 Light-emitting device modules packaged by mounting a light-emitting element such as led
中，^要使其封裝構造小型化時，便使用第1 〇圖所示之表 面封裝型封包構造。此發光元件模組係於由樹脂或陶㈣ 成之基板3設置凹部，並於該凹部底面配置正負兩電極4、 4,藉由導電漿等將發光元件丨電性連接於其中之一電極4而 I5固定。發光元件1之上侧與另—電極4藉金線等打線2電性連 接。該等電極4、4延伸設置於基板之外部。於安裝發光元 件1後，於凹部填充如環氧樹脂之光透射性4高之封裝樹脂 5，使其硬化，而封裝發光元件丨。特別是為白色led時， 發光元件為藍色LED，於封裝樹脂中混合藍色激發黃色發 20光螢光體，同樣地將之填充於反射凹部。 又’將多數發光元件安裝於同一基板之用途迄今以照 明裝置、顯示裝置之點矩陣單元為—般。料裝置為可安 裝多數LED等發光元件般於玻賴維強化環氧樹脂製 基板等安裝多數發光it件，而以—體成型製品化。有關此 1304659 種LED單元用基板揭示於專利文獻1。 此種LED單元之f知構造採祕電子基板上安裝多數 砲彈型LED之構造或安裝多數表面安裝型led之形態。為 製作此單元需町m製作砲彈型絲面絲型 5 LED，藉焊接等狀連接於依需要製作有電子電路圖 形之電子基板。因而，需砲彈型或表面封裝型咖及將之 複合化之LED單元之二階段製品程序。 近年’在LED單元等發光元件模組之製造上，將發光 元件直接安裝於電子基板。稱為基板晶片銲接⑽ip on ad)方式之製法一直為主流。此方法因直接安裝發光元 件，而具有不需前述之半製品程序，且構造亦可簡單化之 優點。 另一方面，當將LED等發光元件安裝於基板上時，為 使其光之射出方向朝向前方，而需具有有為斜面狀反射面 之凹邛之反射杯部之封包構造。此反射杯部之形狀依其設 計亦具有控制發光狀態及保持封裝發光元件之樹脂之功 用。再者，隨著近年發光元件之高發光強度化，使安裝發 光元件之電子基板具有散熱性之功能極為重要。 有鐘於該等要求，如第11圖所示，使用於鋁板或銅板 20等政熱金屬8上設有絕緣層7之基板之構造為主流。第11圖 所不之LED單元之結構為於散熱金屬板8上設置絕緣層7， 於該絕緣層7設置複數電極4，於該等電極4上設置發光元件 1 ’ &打線2將相鄰之電極與發光元件丨之上側電性連接，載 置具有有斜面部6a之複數孔之反射板6而使各發光元件1位 1304659 於凹部之中央，且將封裝樹脂5填充於各孔使其硬化，而封 裝發光元件1。又，第12圖係於基板安裝發光元件丨之狀能 之平面圖。此構造揭示於專利文獻2。 又，於弟13圖顯示此時之電極構造，於第14圖顯示電 5 路結構。 此外’基板晶片銲接方式之發光元件模組一般經由以 下之步驟製作。 1·發光元件於基板之反射杯部内之電極上使用銀漿， 或發光元件之電極材料以AuSn等構成時，給予加熱、振動 10之連接，以所謂之共晶裝設，而採取電性導通。再者，於 對極之電極以打線連接。僅一面具有電極之發光元件對正 負2個電極皆打線。又，僅於模具面具有電極之發光元件亦 可藉覆晶封裝，藉由由配置於電極上之由金等構成之補片 連接。 15 2·於反射杯部内填充封裝樹脂，而併用熱硬化或 化等使用樹脂之硬化而進行硬化處理而成型。製作之發光 元件模組為白色LED模組時，則於硬化前之封裝樹脂預先 混入螢光體。 3.於封裝樹脂之上方、發光元件模組之上方依需要組 20 合由樹脂、玻璃等構成之透鏡體亦可。 另一方面，不設置反射杯部，而於基板上直接安裝發 光元件時，亦有以下之方法，即，如第15圖所示，於平坦 之基板上11上設置電極12，於電極12上以與前述相同之方 法安裝發光元件9及打線1〇,而以轉移成型方法，使封裝樹 1304659 脂13成型，而以樹脂封裝發光元件9及打線ι〇。然而，此方 法中，因基板之尺寸公差等之問題，而不易將封裝樹脂13 施加於正確之位置，再者若為白色LED時，由於於封裝樹 脂13混合螢光體，故當封裝樹脂13之形狀不穩定時，從發 5光元件9發射之光通過含有螢光體之封裝樹脂13中之距離 產生偏差，而不易控制所需之色度。In order to miniaturize the package structure, the surface package type packet structure shown in Fig. 1 is used. The light-emitting element module is provided with a concave portion formed by a resin or ceramic substrate (4), and positive and negative electrodes 4 and 4 are disposed on the bottom surface of the concave portion, and the light-emitting element is electrically connected to one of the electrodes 4 by a conductive paste or the like. And I5 is fixed. The upper side of the light-emitting element 1 is electrically connected to the other electrode 4 by a wire 2 such as a gold wire. The electrodes 4, 4 are extended outside the substrate. After the light-emitting element 1 is mounted, the encapsulating resin 5 having a high light transmittance of 4, such as an epoxy resin, is filled in the concave portion to be hardened, and the light-emitting element is packaged. In particular, when it is white led, the light-emitting element is a blue LED, and a blue-emitting yellow-emitting phosphor is mixed in the encapsulating resin, and is similarly filled in the reflective concave portion. Further, the use of a plurality of light-emitting elements mounted on the same substrate has hitherto been made up of a dot matrix unit of a lighting device or a display device. In the material device, a plurality of light-emitting elements such as LEDs can be mounted, and a plurality of light-emitting elements are mounted on a Bolivia-reinforced epoxy resin substrate, and the product is molded into a body. A substrate for this 1,304,659 LED unit is disclosed in Patent Document 1. Such a LED unit has a structure in which a large number of bullet-type LEDs are mounted on the electronic substrate, or a configuration in which a plurality of surface mount type LEDs are mounted. In order to make this unit, it is necessary to make a shell-type silk wire type 5 LED, and connect it to an electronic substrate having an electronic circuit pattern as needed. Therefore, a two-stage product program of a bullet-type or surface-mount type of coffee and a LED unit to be composited is required. In recent years, in the manufacture of a light-emitting element module such as an LED unit, the light-emitting element is directly mounted on an electronic substrate. A method called substrate wafer soldering (10) ip on ad) has been the mainstream. This method has the advantages that the above-described half-product program is not required and the structure can be simplified because the light-emitting element is directly mounted. On the other hand, when a light-emitting element such as an LED is mounted on a substrate, it is necessary to have a packet structure having a reflecting cup portion which is a concave surface of the inclined reflecting surface in order to direct the light emitting direction toward the front. The shape of the reflecting cup portion also has a function of controlling the light-emitting state and maintaining the resin of the packaged light-emitting element. Further, with the high luminous intensity of the light-emitting element in recent years, it is extremely important to have a function of dissipating heat dissipation of the electronic substrate on which the light-emitting element is mounted. There is a clock in these requirements, as shown in Fig. 11, the structure of the substrate on which the insulating layer 7 is provided on the political hot metal 8 such as an aluminum plate or a copper plate 20 is the mainstream. The LED unit of FIG. 11 is configured such that an insulating layer 7 is disposed on the heat dissipating metal plate 8, and a plurality of electrodes 4 are disposed on the insulating layer 7, and the light emitting elements 1 ' & The electrode is electrically connected to the upper side of the light-emitting element ,, and the reflecting plate 6 having the plurality of holes having the inclined surface portion 6a is placed, and the light-emitting elements are placed 1304659 in the center of the concave portion, and the sealing resin 5 is filled in each hole. Hardened, and the light-emitting element 1 is packaged. Further, Fig. 12 is a plan view showing the state in which the light-emitting element is mounted on the substrate. This configuration is disclosed in Patent Document 2. Further, the image of the electrode at this time is shown in Fig. 13, and the structure of the electric circuit is shown in Fig. 14. Further, the light-emitting element module of the substrate wafer soldering method is generally produced through the following steps. 1. When the light-emitting element is made of silver paste on the electrode in the reflecting cup portion of the substrate, or when the electrode material of the light-emitting element is made of AuSn or the like, the connection of heating and vibration 10 is given, and the so-called eutectic mounting is adopted to electrically conduct. . Furthermore, the electrodes of the opposite pole are connected by wire bonding. Only one of the light-emitting elements having electrodes is wired to the positive and negative electrodes. Further, the light-emitting element having the electrode only on the surface of the mold may be connected by a chip which is formed of gold or the like by being placed on the electrode. 15 2. The encapsulating resin is filled in the reflecting cup portion, and is hardened by hardening or the like by heat curing or the like. When the produced light-emitting element module is a white LED module, the encapsulating resin before curing is mixed with the phosphor in advance. 3. A lens body made of resin, glass, or the like may be provided above the package resin and above the light-emitting element module as needed. On the other hand, when the light-emitting element is directly mounted on the substrate without providing the reflective cup portion, there is also a method of providing the electrode 12 on the flat substrate 11 on the electrode 12 as shown in FIG. The light-emitting element 9 and the wire 1 are mounted in the same manner as described above, and the package tree 1304659 grease 13 is molded by a transfer molding method, and the light-emitting element 9 and the wire are covered with a resin. However, in this method, the sealing resin 13 is not easily applied to the correct position due to the dimensional tolerance of the substrate, etc., and in the case of a white LED, since the phosphor is mixed with the encapsulating resin 13, the encapsulating resin 13 is used. When the shape is unstable, the light emitted from the light-emitting element 9 is deviated by the distance in the encapsulating resin 13 containing the phosphor, and the desired chromaticity is not easily controlled.
【專利文獻1】日本專利公開公報2001-332768號 【專利文獻2】日本專利公開公報2001-332769號 t發明内容3 10 發明概要 前述習知技術有以下之問題。 在表面封裝型之封包構造中，需使電極通過基材之内 部’並需層疊構件而將之組裝。 t知之Is層疊基板或氮化铭基板之散熱性雖可稱得上 15足夠，但為製作反射杯形狀，與前述同樣地需於基板上層 疊反射杯部形成用基材。特別是重視散熱性時，從熱傳導 率之觀點，構成基板之材料使用金屬為適當是無須贅言 的，而於基板使用金屬時，由於具有導電性性質，故需於 電極與基材間施行絕緣處理，此絕緣板亦成為層疊構造中 20 之一要件，構造更複雜化。 此反射杯部形成用基材之組裝通常以接著劑或加熱加 壓進行，因基板之平滑度低或組裝所需之接著劑之塗佈不 均等原因，而於反射杯部形成用基材與基板間產生空隙， 與之後將封裝樹脂加入杯部内時氣泡之產生有關。當封裝 1304659 • 樹脂内有氣泡殘留時，因該氣泡來自發光元件之光大量散 . 射，而有發光元件之光之萃取效率大幅降低之問題。 又，需另外準備與基板分開之反射杯部形成用基材， 且組裝需要額外之步驟，故有導致成本增加之問題。 5 本發明鑑於前述問題，以提供一種發光元件之光之萃 取效率優異，且可以低成本生產之發光元件封裝用基板及 其製造方法、於该基板安裝發光元件而封裝之發光元件模 組與其製造方法、使用該發光元件模組之顯示裝置、照明 — 裝置及交通信號機為目的。 10 為達前述目的，本發明提供一種發光元件安裝用基 板，其係於設置有使從安裝之發光元件發射之光朝一定方 向反射之反射杯部之核心金屬表面設置厚度為 50μιη〜200μιη範圍之琺瑯層。 在本發明之發光元件安裝用基板中，於前述反射杯部 15 之底部周緣宜設置溝。 # 又，本發明提供一種發光元件模組，其係於前述本發 明發光元件安裝用基板安裝發光元件，以透明之封裝樹脂 封裝该發光元件者。 在本發明之發光元件模組中，發光元件宜為於封裝樹 20月曰内混合螢光體而發射白色光之白色發光二極體。 又，本發明提供一種發光元件安裝用基板之製造方 法，其係於核心金屬之預定位置形成使從安裝之發光元件 發射之光朝一定方向反射之反射杯部，接著，於該核心金 屬之表面塗佈琺瑯材後，將之燒結，而獲得於核心金屬之 1304659 表面設有厚度為50μιη〜200μιη範圍之琺瑯層之發光元件用 安裝基板。 在本發明之發光元件安裝用基板之製造方法中，宜將 以玻璃為主體之材電鍍於核心金屬表面，然後，將之燒結。 5 又，本發明提供一種發光元件模組之製造方法，其係 於核心金屬之預定位置形成使從安裝之發光元件發射之光 朝一疋方向反射之反射杯部，接著，於該核心金屬之表面 塗佈琺瑯材後，將之燒結，而製作於金屬之表面設有厚度 為50μηι〜200μπι範圍之琺瑯層之發光元件安裝用基板，接 1〇著，於該發光元件安裝用基板之表面形成電極，然後，於 反射杯部中央部之電極上安裝發光元件，將各電極與發光 元件電性連接，然後，於反射杯部填充樹脂，使其硬化， 封裝發光元件，而製作發光元件模組。 在本發明之發光元件模組之製造方法中，宜以混合有 15螢光體之樹脂封裝發光元件。 在本發明之發光元件模組之製造方法中，發光元件宜 為藍色發光二極體，螢光體為藍色激發黃色發光螢光體。 又’本發明提供一種顯示裝置，其係具有前述本發明 之發光元件模組者。 20 本發明提供一種照明裝置，其係具有前述本發明之發 光元件极組者。 本發明提供一種交通信號機，其係具有前述本發明之 發光元件模組者。 根據本發明，由於於發光元件安裝用基板設有安裝發 1304659 光元件之反射杯部，故不需再於基板製作與基板分開之反 射杯部形成用基板’而可使基板構造單純，而可抑制組參 之成本。 又，因不使用與基板分開之反射杯用基材，故可防止 5氣泡混入封裝樹脂，而可防止來自發光元件之光之萃取效 率降低。 又，由於於反射杯部之底部之周緣形成溝，故於燒結 琺瑯層時，玻璃不致熔融而使底部周緣變圓，故可確保於 底部中央安裝發光元件之部份。 10 由於使用於核心金屬表面設有琺瑯層之發光元件安裝 用基板，故射熱性優異，而可提高LED等之發光元件之發 光強度。 圖式簡單說明 第1圖係顯示本發明發光元件模組之第i實施形態之截 15 面圖。 第2圖係顯示本發明基板之第丨實施形態之截面圖。 第3圖係顯示本發明基板之第1實施形態之平面圖。 第4圖係顯示本發明發光元件模組之第2實施形態之截 面圖。 20 第5圖係顯示本發明發光元件模組之第3實施形態之截 面圖。 第6圖係顯示具有溝之反射杯部一例之主要部份截面 圖。 第7圖係顯不具有溝之反射杯部另一例之主要部份截 11 1304659 面圖。 弟8圖係以你 施例製作之反射杯部之主要部份截面圖。 第9圖係卮a 在邠周緣變圓之反射杯部之主要部份截面圖。 第10圖係仓，_ 、1lJ示習知發光元件封包構造之截面圖。 第11圖係& — … 、’示習知發光元件模組之一例之截面圖。 弟12圖係& — 、一示習知發光元件模組之一例之平面圖。 第13圖係— 、續示習知發光元件模組之電極構造之平面[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-332768 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2001-332769 No. 3 SUMMARY OF THE INVENTION The foregoing prior art has the following problems. In the surface-package type package structure, it is necessary to pass the electrodes through the inner portion of the substrate and to assemble the members by laminating them. Although the heat dissipation property of the Is laminated substrate or the nitrided substrate is sufficient, it is sufficient to form a reflecting cup shape, and the base material for reflecting the cup portion needs to be laminated on the substrate in the same manner as described above. In particular, when heat dissipation is important, it is needless to say that the material constituting the substrate is suitable from the viewpoint of thermal conductivity, and when the metal is used as the substrate, since it has electrical conductivity, it is necessary to perform insulation treatment between the electrode and the substrate. This insulating plate also becomes one of the elements in the laminated structure, and the structure is more complicated. The assembly of the base material for forming a reflecting cup portion is usually performed by an adhesive or heat and pressure, and the base material for forming the reflecting cup portion is caused by the low smoothness of the substrate or the uneven coating of the adhesive required for assembly. A gap is formed between the substrates, which is associated with the generation of bubbles when the encapsulating resin is subsequently added to the cup portion. When the package 1304659 • there is a bubble remaining in the resin, the light from the light-emitting element is largely scattered, and the extraction efficiency of the light of the light-emitting element is greatly reduced. Further, it is necessary to separately prepare a substrate for forming a reflecting cup portion which is separated from the substrate, and an additional step is required for assembly, which causes a problem of an increase in cost. In view of the above problems, the present invention provides a light-emitting element package substrate which is excellent in light extraction efficiency of a light-emitting element and can be produced at low cost, a method for manufacturing the same, a light-emitting element module in which a light-emitting element is mounted on the substrate, and a light-emitting element module thereof. The method, the display device, the illumination device and the traffic signal device of the light-emitting element module are used. In order to achieve the above object, the present invention provides a substrate for mounting a light-emitting element, which is provided with a thickness of 50 μm to 200 μm in a core metal surface provided with a reflecting cup portion for reflecting light emitted from a light-emitting element mounted in a certain direction.珐琅 layer. In the substrate for mounting a light-emitting element of the present invention, a groove is preferably provided on the periphery of the bottom of the reflecting cup portion 15. Further, the present invention provides a light-emitting element module in which a light-emitting element is mounted on a substrate for mounting a light-emitting element of the present invention, and the light-emitting element is encapsulated with a transparent sealing resin. In the light-emitting element module of the present invention, the light-emitting element is preferably a white light-emitting diode that emits white light by mixing the phosphor in the package tree for 20 months. Moreover, the present invention provides a method of manufacturing a substrate for mounting a light-emitting element, wherein a reflective cup portion for reflecting light emitted from the mounted light-emitting element in a certain direction is formed at a predetermined position of the core metal, and then on the surface of the core metal After the coffin was applied, it was sintered to obtain a mounting substrate for a light-emitting element having a thickness of 50 μm to 200 μm in the surface of 1304659 of the core metal. In the method for producing a substrate for mounting a light-emitting element of the present invention, it is preferable to plate a material mainly composed of glass on the surface of the core metal, and then to sinter it. Further, the present invention provides a method of manufacturing a light-emitting element module, which is formed at a predetermined position of a core metal to form a reflecting cup portion for reflecting light emitted from a light-emitting element mounted in a direction, and then on a surface of the core metal After the coffin is applied, it is sintered, and a substrate for mounting a light-emitting element having a thickness of 50 μm to 200 μm in thickness is formed on the surface of the metal, and an electrode is formed on the surface of the substrate for mounting the light-emitting element. Then, a light-emitting element is mounted on the electrode at the central portion of the reflector cup portion, and each electrode is electrically connected to the light-emitting element. Then, the resin is filled and sealed in the reflector cup portion, and the light-emitting element is packaged to fabricate the light-emitting element module. In the method of manufacturing a light-emitting element module of the present invention, it is preferable to encapsulate the light-emitting element with a resin in which 15 phosphors are mixed. In the method of fabricating the light-emitting device module of the present invention, the light-emitting element is preferably a blue light-emitting diode, and the phosphor is a blue-excited yellow light-emitting phosphor. Further, the present invention provides a display device having the above-described light-emitting element module of the present invention. The present invention provides an illumination device comprising the above-described group of light-emitting elements of the present invention. The present invention provides a traffic signal device having the above-described light-emitting element module of the present invention. According to the present invention, since the reflecting cup portion on which the light element 1304659 is mounted is provided on the substrate for mounting the light emitting element, the substrate for forming the reflecting cup portion separate from the substrate can be formed on the substrate, and the substrate structure can be simplified. Inhibit the cost of group participation. Further, since the base material for the reflector cup which is separated from the substrate is not used, it is possible to prevent the bubbles from being mixed into the sealing resin, and it is possible to prevent the extraction efficiency of light from the light-emitting element from being lowered. Further, since the groove is formed on the periphery of the bottom portion of the reflecting cup portion, the glass is not melted and the bottom peripheral edge is rounded when the ruthenium layer is sintered, so that the portion of the light-emitting element can be secured at the center of the bottom portion. (10) Since the substrate for mounting a light-emitting element having a ruthenium layer on the surface of the core metal is used, the heat-emitting property is excellent, and the light-emitting intensity of the light-emitting element such as an LED can be improved. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an i-th embodiment of a light-emitting element module of the present invention. Fig. 2 is a cross-sectional view showing a third embodiment of the substrate of the present invention. Fig. 3 is a plan view showing a first embodiment of the substrate of the present invention. Fig. 4 is a cross-sectional view showing a second embodiment of the light-emitting element module of the present invention. Fig. 5 is a cross-sectional view showing a third embodiment of the light-emitting element module of the present invention. Fig. 6 is a cross-sectional view showing an essential part of an example of a reflecting cup portion having a groove. Figure 7 is a cross-sectional view of the main part of another example of a reflector cup having no grooves. The brother 8 is a cross-sectional view of the main part of the reflector cup made by your example. Fig. 9 is a cross-sectional view showing the main part of the reflecting cup portion which is rounded at the circumference of the crucible. Fig. 10 is a cross-sectional view showing a package structure of a light-emitting element, _, 1lJ. Fig. 11 is a cross-sectional view showing an example of a light-emitting element module of the & Figure 12 is a plan view showing an example of a conventional light-emitting element module. Figure 13 is a diagram showing the plane of the electrode structure of the conventional light-emitting element module
10 弟14圖係韧 与知發光元件模組之電路圖。 第15圖係_ ’示習知發光元件模組另一例之截面圖 【實施令式】 用以實施發明《最佳形態10 Brother 14 Figure toughness and circuit diagram of the known light-emitting component module. Fig. 15 is a cross-sectional view showing another example of the light-emitting element module of the prior art [implementation method]
Us下，參^ 0¾ > 4圖式，說明本發明之實施形態。 一 @〜弟3圖係顯示本發明第1實施形態者，第1圖係顯 τ毛光元件抵、纟且之截面圖，第2圖係顯示用於同一發光元件 核組之發光70件安裝用基板(以下記載為基板)之截面圖，第 3圖係顯不同~基板之平面圖。在該等圖中，標號20為發光 元件模、、且21為j法瑯基板，22為核心金屬，23為ί法螂層， 24為LED等發光^件，25為打線，26為封裝樹脂，27為電 20極，28為反射杯部，29a為底部，29b為斜面部。 本實施形態之基板21如第2圖及第3圖所示，其結構為 於縱橫設置有複數個使從安裝之發光元件24射出之光朝向 一定方向反射之反射杯部28的核心金屬22表面設置厚户為 50μηι〜200μηι範圍之ί法瑯層23。 12 1304659 又’本實施形態之發光元件模組20如第丨圖所示具有前 述琺瑯基板21、於該琺瑯基板21上面以分割為複數之狀態 «又置之電極27、安裝於各反射杯部μ之底部29a中央部之電 極27上之發光元件24、將各發光元件24之上側與相鄰之電 5極27電性連接之打線25、填充於各反射杯部28内，使其硬 化，而封裝發光元件24之透明封裝樹脂26而構成。 前述琺瑯基板21之核心金屬22可使用各種金屬材料而 製作，其材料未限定，以諸如低碳鋼、不鏽鋼等低價且易 加工之金屬材料為佳。此外，在本例中，使用四角形板狀 10之核心金屬22，核心金屬22之形狀不以此為限，可依發光 元件模組20之用途等適當選擇。 於核心金屬22形成反射杯部28之方法可以使用鑽頭等 之切削工具之切削加工或使用超硬磨石之研磨加工而簡單 形成。 15 形成之反射杯部28之凹部形狀宜為具有平坦之底部 29a及從其周緣往上逐漸擴大之傾斜之部29b之形狀。 設置於此核心金屬22表面之琺瑯層23之材料可從以過 去用於於金屬表面形成ί法鄉層之玻璃為主體之材料中選擇 使用。在本發明中’ a又置於核心金屬22表面之j法瑯層23厚 2〇度範圍為5〇μηι〜200μιη。當琺瑯層23之厚度未達5〇μηχ時， 於核心金屬22表面燒結時於琺瑯層產生龜裂，而内部之金 屬有露出至外部之可能性，而產生因絕緣性能降低、核心 金屬22之乳化專成之長期k賴性之降低。又，當j法瑯層 23之厚度超過200μπι時，仍有於綠瑯層產生龜裂之可能 13 第95119604號申請 $發明說明_巷施百〇7 rrpo修正 性，且於燒結暗，3 )’序V月1日修(更)正替換頁 1304659 安裝空間減少，無法於底部29a安裝發光元件24之問題。在 本灸明中藉於核心金屬22表面形成厚度5〇μιη〜2〇Ομηι範圍 之琺瑯層23，可形成具有優異之絕緣性能、無龜裂且均一 之琺瑯層23。若為此厚度之琺瑯層23，可再次呈現作為基 材之核心金屬22之原本的形狀，而形成於核心金屬22之反 射杯部28之形狀亦可於琺螂層23再次呈現原本的形狀。 設置於前述基板21上面之電極27藉厚膜銀漿，延伸至 反射杯部28内部而形成。亦可將銅箔加壓成形而安裝於反 10 射杯内。In the following, the embodiment of the present invention will be described with reference to Fig. 4 . In the first embodiment of the present invention, the first embodiment shows a cross-sectional view of the τ bristles, and the second figure shows the illuminating 70 pieces for the same illuminating element nucleus. A cross-sectional view of a substrate (hereinafter referred to as a substrate) is used, and FIG. 3 is a plan view showing a different substrate. In the figures, reference numeral 20 is a light-emitting element mold, and 21 is a j-method substrate, 22 is a core metal, 23 is a ruthenium layer, 24 is a light-emitting element such as an LED, 25 is a wire, and 26 is an encapsulating resin. 27 is an electric 20 pole, 28 is a reflecting cup portion, 29a is a bottom portion, and 29b is a sloped portion. As shown in FIGS. 2 and 3, the substrate 21 of the present embodiment has a structure in which a plurality of surfaces of the core metal 22 of the reflecting cup portion 28 for reflecting the light emitted from the mounted light-emitting element 24 in a certain direction are provided in the vertical and horizontal directions. Set the thick layer to the range of 50μηι~200μηι. 12 1304659 Further, the light-emitting element module 20 of the present embodiment has the above-described ruthenium substrate 21 as shown in the first drawing, and is divided into a plurality of electrodes on the upper surface of the ruthenium substrate 21, and the electrode 27 is attached to each of the reflective cup portions. The light-emitting element 24 on the electrode 27 at the central portion of the bottom portion 29a of the μ, and the wire 25 for electrically connecting the upper side of each of the light-emitting elements 24 and the adjacent electric poles 27 are filled in the respective reflecting cup portions 28 to be hardened. The transparent encapsulating resin 26 of the light-emitting element 24 is encapsulated. The core metal 22 of the foregoing ruthenium substrate 21 can be made of various metal materials, and the material thereof is not limited, and it is preferably a low-cost and easy-to-process metal material such as low carbon steel or stainless steel. Further, in this example, the core metal 22 of the quadrangular plate shape 10 is used, and the shape of the core metal 22 is not limited thereto, and may be appropriately selected depending on the use of the light-emitting element module 20. The method of forming the reflecting cup portion 28 on the core metal 22 can be easily formed by cutting using a cutting tool such as a drill or grinding using a super-hard grindstone. The shape of the concave portion of the reflecting cup portion 28 formed is preferably in the shape of a flat bottom portion 29a and an inclined portion 29b which gradually enlarges from the periphery thereof. The material of the ruthenium layer 23 provided on the surface of the core metal 22 can be selected from materials mainly composed of glass which has been used for forming a metal surface on a metal surface. In the present invention, a is placed on the surface of the core metal 22, and the thickness of the layer 23 is 2 〇 in the range of 5 〇μηι to 200 μιη. When the thickness of the ruthenium layer 23 is less than 5 〇μηχ, cracks are generated in the ruthenium layer when the surface of the core metal 22 is sintered, and the metal inside is exposed to the outside, and the core metal 22 is lowered due to the insulation property. The long-term dependence of the emulsification specialization. Moreover, when the thickness of the j-method layer 23 exceeds 200 μm, there is still a possibility of cracking in the green enamel layer. 13 No. 95119604 application: invention description _ lane Shi Bai 7 7 rrpo correction, and dark in sintering, 3) It is a problem that the mounting space is reduced and the light-emitting element 24 cannot be mounted on the bottom portion 29a. In the present moxibustion, a layer 23 having a thickness of 5 〇 μm to 2 〇Ο μηι is formed on the surface of the core metal 22 to form a ruthenium layer 23 having excellent insulating properties and no cracks and uniformity. If the thickness of the ruthenium layer 23 is present, the original shape of the core metal 22 as the base material can be again exhibited, and the shape of the reflector cup portion 28 formed on the core metal 22 can again assume the original shape of the ruthenium layer 23. The electrode 27 provided on the upper surface of the substrate 21 is formed by a thick film of silver paste extending into the inside of the reflecting cup portion 28. The copper foil may also be press-formed and mounted in a counter-cup.
前述發光元件24並未特別限定，宜使用led、雷射二 極體(LD)等半導體發光元件。又，在本發明中使用之發光 元件24之發光色為藍色、綠色、紅色或其他之發光色亦可， 使用組合由氮化物系化合物半導體構成之藍色發光半導體 15元件及吸收至少一部份該藍色系之光而波長轉換為可見波 頻域之螢光體（例如以鈽活化之釔鋁石榴石螢光體等）之白 色LED亦可。又，並列安裝於琺瑯基板21之複數發光元件 24依交通信號機等之用途為相同之發光色之LED等亦可， 將不同發光色之LED等依序或隨機配置而作為顯示裝置亦 20可。再者，可於大面積之琺瑯基板21上依序或隨機配置多 數之藍色LED、綠色LED、紅色LED，而構成使用lED之顯 不裝置。亦可發光元件24使用白色LED，將多數白色LED 縱橫安裝於大型琺瑯基板21，而構成大面積之平面型照明 裝置。 14 Ϊ304659 封裝樹脂26可使用光透射率高之環氧系熱硬化型樹 脂、紫外線硬化型樹脂、熱硬化之矽樹脂等。 打線25可使用金線等。此打線25使用過去用於發光元 件24等之連接之打線裝置而打線。 5 由於前述發光元件模組20於琺瑯基板21設置用以安裝The light-emitting element 24 is not particularly limited, and a semiconductor light-emitting element such as a led or a laser diode (LD) is preferably used. Further, the luminescent color of the light-emitting element 24 used in the present invention may be blue, green, red or other luminescent color, and a blue light-emitting semiconductor 15 element composed of a nitride-based compound semiconductor may be used and at least one portion may be absorbed. A white LED of the blue light and having a wavelength converted into a visible wave frequency domain phosphor (for example, a yttrium aluminum garnet phosphor activated by ruthenium) may be used. Further, the plurality of light-emitting elements 24 mounted in parallel on the ruthenium substrate 21 may be LEDs having the same illuminating color as those used for traffic signals, etc., and LEDs of different illuminating colors may be sequentially or randomly arranged as display devices. . Further, a plurality of blue LEDs, green LEDs, and red LEDs can be sequentially or randomly arranged on the large-area substrate 21 to constitute a display device using the lED. Alternatively, the light-emitting element 24 may be formed of a large-area planar illumination device by using a white LED and mounting a plurality of white LEDs on the large-sized slab substrate 21 in a vertical and horizontal direction. 14 Ϊ304659 The encapsulating resin 26 can be an epoxy-based thermosetting resin, an ultraviolet curable resin, or a thermosetting enamel resin having a high light transmittance. The wire 25 can be used with a gold wire or the like. This wire 25 is wired using a wire bonding device which has been used for connection of the light-emitting element 24 or the like. 5, the light emitting element module 20 is disposed on the 珐琅 substrate 21 for mounting
發光元件之反射杯部28，故不需於基板再另外製作與基板 分開之反射杯部形成用基板，而可使基板構造單純，而可 抑制組裝之成本。 又’因不使用與基板分開之反射杯用基材，故可防止 10氣泡混入封裝樹脂26 ’而可防止來自發光元件24之光之萃 取效率降低。 由於使用於核心金屬22表面設有琺瑯層23之琺瑯基板 21，故散熱性優異而可提高LED等之發光元件24之發光強 度。 此外，在前述琺瑯基板21之構造為電極24露出至基板 上面之構造，而於該露出之部份配置用以採取電性絕緣之 樹脂等亦可。 又，於封裝樹脂26之上方或發光元件模組2〇之上方依 需要組合樹脂、玻璃等構成之透鏡體亦可。 第4圖係顯示本發明發光元件模組之第2實施形態之截 面圖，第4圖中之標號3〇為發光元件模組，31為琺瑯基板， 32為核心金屬，33為琺瑯層，34為1^〇等發光元件，^為 打線，36為封裝樹脂’ 37為電極，38為反射杯部，他為底 部，39b為斜面部。 15 1304659 本實施形悲之發光元件模組3〇顯示使用用以安裝發光 元件單體34之琺瑯基板31之構造，除了琺瑯基板31之形 狀、發光元件34之安裝個數外，其餘皆與前述第丨實施形態 之發光元件模組20相同，構成此發光元件模組3〇之琺瑯基 5板31、核心金屬32、琺螂層33、發光元件34、打線35、封 裝樹脂36、電極37及反射杯部38與構成前述第丨實施形態之 發光元件模組20之ί法瑯基板21、核心金屬22、ί法瑯層23、 發光元件24、打線25、封裝樹脂26、電極27及反射杯部28 同樣地構成。 本實施形態之發光元件模組30可獲得與前述第丨實施 形態之發光元件模組20相同之效果。Since the reflecting cup portion 28 of the light-emitting element is formed, it is not necessary to separately form a reflecting cup portion forming substrate separate from the substrate, and the substrate structure can be simplified, and the cost of assembly can be suppressed. Further, since the substrate for the reflecting cup which is separated from the substrate is not used, it is possible to prevent the bubbles from being mixed into the sealing resin 26' and to prevent the extraction efficiency of light from the light-emitting element 24 from being lowered. Since the ruthenium substrate 21 having the ruthenium layer 23 provided on the surface of the core metal 22 is excellent in heat dissipation, the light-emitting intensity of the light-emitting element 24 such as an LED can be improved. Further, the structure of the ruthenium substrate 21 may be such that the electrode 24 is exposed to the upper surface of the substrate, and a resin for electrically insulating may be disposed in the exposed portion. Further, a lens body made of resin, glass or the like may be combined above the encapsulating resin 26 or above the light-emitting element module 2'. Fig. 4 is a cross-sectional view showing a second embodiment of the light-emitting element module of the present invention. In Fig. 4, reference numeral 3 is a light-emitting element module, 31 is a germanium substrate, 32 is a core metal, and 33 is a germanium layer, 34 For a light-emitting element such as 1^〇, ^ is a wire, 36 is an encapsulating resin '37 is an electrode, 38 is a reflecting cup portion, he is a bottom portion, and 39b is a bevel portion. 15 1304659 The light-emitting element module 3 of the present embodiment shows a structure in which the germanium substrate 31 for mounting the light-emitting element unit 34 is used, except for the shape of the germanium substrate 31 and the number of the light-emitting elements 34 mounted, In the same manner as the light-emitting element module 20 of the second embodiment, the illuminating element module 3, the core metal 32, the ruthenium layer 33, the light-emitting element 34, the wire 35, the encapsulating resin 36, and the electrode 37 are formed. The reflective cup portion 38 and the illuminating substrate 21, the core metal 22, the ruthenium layer 23, the light-emitting element 24, the wire 25, the encapsulating resin 26, the electrode 27, and the reflective cup constituting the light-emitting element module 20 of the above-described second embodiment The part 28 is configured in the same manner. The light-emitting element module 30 of the present embodiment can obtain the same effects as those of the light-emitting element module 20 of the above-described first embodiment.
第5圖係顯示本發明第2實施形態之發光元件模組之截 面圖，第5圖中之標號40為發光元件模組，41為琺瑯基板， 42為核心金屬，43為琺瑯層，44為LED等發光元件，45為 15打線’ 46為封裝樹脂’ 47為電極，48為反射杯部，49a為底 部，49b為斜面部。 本實施形態之發光元件模組40除了使用於反射杯部48 之底部49a周緣設置溝50之ϊ法瑯基板41外，其餘皆與前述第 1實施形態之發光元件模組20相同，構成此發光元件模組4〇 2〇 之綠鄉基板41、核心金屬42、ί法鄉層43、發光元件44、打 線45、封裝樹脂46、電極47及反射杯部48與構成前述第1實 施形悲之發光元件模組20之ί法鄉基板21、核心金屬22、j法 瑯層23、發光元件24、打線25、封裝樹脂26、電極27及反 射杯部28同樣地構成。 16 1304659 ' 、W I作具有反射杯部48之接螂基板41時，於核心金屬 • 42塗佈_材’而以燒齡金屬42表面収_層43，而 進行燒結時，玻璃體於燒結前暫時熔融而流動，故導致杯 之底部變圓’而依情形有無法確保安裝發光元件44之平滑 、可月生在本實施形恶中，藉使用於底部術周緣設有 溝50之籍螂基板4卜玻璃體積存於底部周緣之溝，而其他 底。M9a可維持平坦之狀態。底部他設有溝％以外之部 φ 料安裝發光元件44之部份，藉使其面積為適當 ，可確保 用以安裝發光元件之平坦之部份。 10 在本實施形態中，可獲得與前述第1實施形態相同之效 果，且由於於反射杯部48之底部49a周緣形成溝5〇，故於燒 、、“法螂層43日寸，玻璃不致溶融而使底部49a周緣變圓，故可 確保於底部中央安裝發光元件44之部份，而可提高產率。 第6圖係顯示具有溝之反射杯部之一例者，在本例中， 15反射杯部51之結構為於底部52與斜面部53間形成溝54，同 麵| 時，於底部52之周緣設置凸部55。在此構造中，藉設置溝 54，且於底部52周緣設置凸部55，可防止已熔融之玻璃流 入溝54中。 第7圖係顯示具有溝之反射杯部之另一例者，在本例 20中，反射杯部56之結構為於底部57與斜面部58間設置呈向 底部57之外側逐漸加深之形狀之溝59。在此形狀之溝59 中’由於溶融之玻璃易运離底部57而積存，故可提高防止 底部27之周緣變圓之效果。 此外，於反射杯部之底部周緣形成溝之方法一旦不使 17 1304659 5Fig. 5 is a cross-sectional view showing a light-emitting device module according to a second embodiment of the present invention. Reference numeral 40 in Fig. 5 denotes a light-emitting element module, 41 is a germanium substrate, 42 is a core metal, 43 is a germanium layer, and 44 is a layer. For a light-emitting element such as an LED, 45 is 15 lines '46 is an encapsulating resin' 47 is an electrode, 48 is a reflecting cup portion, 49a is a bottom portion, and 49b is a bevel portion. The light-emitting element module 40 of the present embodiment is configured in the same manner as the light-emitting element module 20 of the first embodiment except that the substrate 41 is provided on the periphery of the bottom portion 49a of the reflector cup portion 48. The green module substrate 41, the core metal 42, the light-emitting element 44, the wire 45, the encapsulating resin 46, the electrode 47, and the reflective cup portion 48 of the element module 4〇2〇 constitute the first embodiment The illuminating substrate 21, the core metal 22, the j 琅 layer 23, the light-emitting element 24, the wire 25, the encapsulating resin 26, the electrode 27, and the reflecting cup portion 28 of the light-emitting element module 20 are similarly configured. 16 1304659 'When the WI is used as the interface substrate 41 of the reflective cup portion 48, the core metal 42 is coated with the material - and the surface of the burnt metal 42 is _ layer 43, and when the sintering is performed, the glass body is temporarily before sintering. Melting and flowing, so that the bottom of the cup is rounded, and depending on the situation, it is impossible to ensure the smoothness of mounting the light-emitting element 44, and it can be used in the present embodiment, and the substrate 4 is provided with the groove 50 on the periphery of the bottom. The glass volume is stored in the groove at the bottom of the bottom, while the other bottom. M9a can maintain a flat state. At the bottom, he is provided with a portion other than the groove %. The portion of the light-emitting element 44 is mounted, and the area is appropriately adjusted to ensure the flat portion for mounting the light-emitting element. In the present embodiment, the same effect as that of the first embodiment described above can be obtained, and since the groove 5〇 is formed on the periphery of the bottom portion 49a of the reflecting cup portion 48, the crucible layer is 43 inches, and the glass is not made. By melting and rounding the periphery of the bottom portion 49a, it is ensured that the portion of the light-emitting element 44 is mounted at the center of the bottom portion, and the yield can be improved. Fig. 6 shows an example of a reflecting cup portion having a groove, in this example, 15 The reflecting cup portion 51 is configured such that a groove 54 is formed between the bottom portion 52 and the inclined surface portion 53. When the surface is the same surface, the convex portion 55 is provided on the periphery of the bottom portion 52. In this configuration, the groove 54 is provided and the periphery of the bottom portion 52 is disposed. The convex portion 55 prevents the molten glass from flowing into the groove 54. Fig. 7 shows another example of the reflecting cup portion having the groove. In the present example 20, the reflecting cup portion 56 has a structure at the bottom portion 57 and the inclined portion. Each of the 58 spaces is provided with a groove 59 which is gradually deepened toward the outer side of the bottom portion 57. In the groove 59 of the shape, since the molten glass is easily transported away from the bottom portion 57, the effect of preventing the circumference of the bottom portion 27 from being rounded can be improved. In addition, a groove is formed on the periphery of the bottom of the reflecting cup portion. Once without 1713046595
10 1510 15
琺瑯層之厚度為適當時，於燒結時王法鄉層局部流動而易於 綠瑯層產生凹陷，有關電極當以銀漿製作時，由於塗佈前 為液狀，故此溝之部份亦可連續確保電性導通。 核心金屬使用長度50mm、寬度5〇_、厚度imm之低 碳鋼板。於該鋼板表面以鑽頭加工於縱橫均等配置各3個總 計9個之凹部而形成。該等凹部底面之尺寸為細麵、深 度〇.5mm，且以45。之角度形成傾斜部。 於使珠瑯層形成用玻璃粉體於分散介質分散者配置成 核心基板與該核心金屬之對極電極之銘板距離扣咖，而 使金屬板與純浸潰於前述分散介#巾。再者，於該等核 心金屬與域間，使金屬板為陰極側，施加直流電麼而^ 金屬表面電鑛玻璃粉體。然後，在大氣中燒結，藉於核心 金屬表面形成由玻璃構成之珠螂層，製成珠瑯基板1極 猎於瑞螂層上塗佈銀漿後予以燒結而製成。 調整玻璃粉末之塗佈而使料層之厚度變化 表1所示之基板。 裏成When the thickness of the ruthenium layer is appropriate, the local layer of Wangfa Township flows during sintering and the sag is easily formed by the green enamel layer. When the electrode is made of silver paste, it is continuous because it is liquid before coating. Ensure electrical continuity. The core metal is a low carbon steel plate with a length of 50 mm, a width of 5 〇, and a thickness of imm. On the surface of the steel sheet, three recesses of three totals are arranged in a vertical and horizontal direction by a drill. The dimensions of the bottom surface of the recesses are fine, depth 〇5 mm, and 45. The angle forms an inclined portion. The glass frit for forming the bead layer is disposed in a dispersing medium, and the core substrate and the counter electrode of the core metal are disposed so as to be immersed in the dispersion. Further, between the core metals and the domains, the metal plate is placed on the cathode side, and a direct current is applied to the metal surface. Then, it is sintered in the atmosphere, and a bead layer made of glass is formed on the surface of the core metal, and the bead substrate is formed by coating a silver paste on a ruthenium layer and then sintering it. The coating of the glass powder was adjusted to vary the thickness of the layer to the substrate shown in Table 1. Licheng
20 下之厚 18 1304659 第95119604號申气宰琴昍說昍畫甚換頁 9^p9修正20 thickness 18 1304659 No. 95119604 Shen Qi Zhai Qin said that the painting is very changed page 9^p9 correction
??年，)月，7日疯更远替换負i '~J 度時，琺瑯層之一部份產生龜裂，内部之金屬露出至外部。 此時，有因絕緣性能降低、金屬之氧化等造成之基板之長 期信賴性降低之虞。龜裂易產生於第8圖所示之反射杯部60 之肩61之部份。 5 接著，於前述第1〜第3實施例、第1〜第2比較例之各琺 瑯基板安裝LED。In the year of the year, when the madness was replaced by the negative i '~J degree on the 7th, a part of the enamel layer was cracked, and the inner metal was exposed to the outside. At this time, there is a possibility that the long-term reliability of the substrate is lowered due to a decrease in insulation performance and oxidation of metal. The crack is easily generated in the portion of the shoulder 61 of the reflecting cup portion 60 shown in Fig. 8. 5 Next, LEDs were mounted on each of the first to third embodiments and the first to second comparative examples.
將結果顯示於表2。此外，LED使用縱300μιη、寬度 3 00μιη、厚度200μιη之hGaN構成之藍色LED(發光中心波長 λ=460ηιη)而評價。 1〇 【表2】 基板上之 厚度（μιη) 凹部底面部 之厚度（μχη) 凹部底面部之導 電層厚度（μιη) 發光元件之 安裝 第1實施例 50 52 30 無問題 第2實施例 97 98 31 無問題 第3實施例 210 200 28 無問題 第1比較例 30 34 30 無問題 第2比較例 300 320 20 有2處無法 確認安裝 由表2之結果可知，在第2比較例中，9處中有2處無法 安裝發光元件。其理由為當觀察截面時，凹部底面周緣62 之基板形狀如第9圖所示呈變圓之形狀，而可安裝發光元件 15之平坦部之區域縮小之故。呈此形狀之理由係當燒結琺瑯 層時，其原料之玻璃粉體溶融流動而積存之結果。若為 200μιη以下厚度之層時，便可確保安裝發光元件所需之足 夠區域。 根據本發明，可提供發光元件之光之萃取效率優異， 20且可以低成本生產之發光元件封裝用基板及其製造方法、 19 1304659 於該基板安裝發光元件而封裝之發光元件模組與其製造方 法、使用該發光元件模組之顯示裝置、照明裝置及交通信 號機。 【囷式簡單說明3 5 第1圖係顯示本發明發光元件模組之第1實施形態之截 面圖。 第2圖係顯示本發明基板之第1實施形態之截面圖。 第3圖係顯示本發明基板之第1實施形態之平面圖。The results are shown in Table 2. Further, the LED was evaluated using a blue LED (light-emitting center wavelength λ = 460 ηηη) composed of hGaN having a length of 300 μm, a width of 300 μm, and a thickness of 200 μm. 1〇[Table 2] Thickness on the substrate (μιη) Thickness of the bottom surface portion of the concave portion (μχη) Thickness of the conductive layer on the bottom surface portion of the concave portion (μιη) Installation of the light-emitting element First embodiment 50 52 30 No problem Second embodiment 97 98 31 No problem Third embodiment 210 200 28 No problem First comparative example 30 34 30 No problem Second comparative example 300 320 20 There are two places where the installation cannot be confirmed. As can be seen from the results of Table 2, in the second comparative example, 9 places There are 2 places where the light-emitting elements cannot be installed. The reason for this is that when the cross section is observed, the shape of the substrate on the peripheral edge 62 of the bottom surface of the concave portion is rounded as shown in Fig. 9, and the area where the flat portion of the light-emitting element 15 can be mounted is reduced. The reason for this shape is that when the tantalum layer is sintered, the glass powder of the raw material is melted and flows and accumulated. If it is a layer having a thickness of 200 μm or less, it is possible to secure a sufficient area for mounting the light-emitting element. According to the present invention, it is possible to provide a light-emitting element package substrate which is excellent in light extraction efficiency of a light-emitting element, and which can be produced at low cost, and a method of manufacturing the same, and a light-emitting element module in which a light-emitting element is mounted on the substrate and a method of manufacturing the same The display device, the illumination device and the traffic signal of the light-emitting element module are used. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a light-emitting element module of the present invention. Fig. 2 is a cross-sectional view showing a first embodiment of the substrate of the present invention. Fig. 3 is a plan view showing a first embodiment of the substrate of the present invention.
第4圖係顯示本發明發光元件模組之第2實施形態之截 10 面圖。 第5圖係顯示本發明發光元件模組之第3實施形態之截 面圖。 第6圖係顯示具有溝之反射杯部一例之主要部份截面 圖。 15 第7圖係顯示具有溝之反射杯部另一例之主要部份截Fig. 4 is a cross-sectional view showing a second embodiment of the light-emitting element module of the present invention. Fig. 5 is a cross-sectional view showing a third embodiment of the light-emitting element module of the present invention. Fig. 6 is a cross-sectional view showing an essential part of an example of a reflecting cup portion having a groove. 15 Figure 7 shows the main part of another example of a reflector cup with a groove
第8圖係以實施例製作之反射杯部之主要部份截面圖。 第9圖係底部周緣變圓之反射杯部之主要部份截面圖。 第10圖係例示習知發光元件封包構造之截面圖。 20 第11圖係顯示習知發光元件模組之一例之截面圖。 第12圖係顯示習知發光元件模組之一例之平面圖。 第13圖係顯示習知發光元件模組之電極構造之平面 圖。 第14圖係習知發光元件模組之電路圖。 20 1304659 第15圖係顯示習知發光元件模組另一例之截面圖 【主要元件符號說明Fig. 8 is a cross-sectional view showing the main part of a reflecting cup portion produced by the embodiment. Fig. 9 is a cross-sectional view showing the main part of the reflecting cup portion where the bottom circumference is rounded. Fig. 10 is a cross-sectional view showing a conventional light-emitting element package structure. 20 Fig. 11 is a cross-sectional view showing an example of a conventional light-emitting element module. Fig. 12 is a plan view showing an example of a conventional light-emitting element module. Figure 13 is a plan view showing the electrode structure of a conventional light-emitting element module. Figure 14 is a circuit diagram of a conventional light-emitting element module. 20 1304659 Fig. 15 is a cross-sectional view showing another example of a conventional light-emitting element module.
1…發光元件 2…打線 3…基板 4…電極 5···封裝樹脂 6…反射板 6a…斜面部 7…絕緣層 8…散熱金屬板 9…發光元件 10…打線 ll···基板 12 ^ · ·電才& 13…封裝樹脂 20…發光元件 21…ί法鄉基板 22…核心金屬 23…ί法鄉層 24…發光元件 25…打線 26…封裝樹脂 27…電極 28…反射杯部 29b…斜面部 30…發光元件 31…琺瑯基板 32…核心金屬 33…ί法瑯層 34…發光元件 35…打線 36…封裝樹脂 37…電極 38…反射杯部 39a…底部 39b…斜面部 40…發光元件 41…ί法鄉基板 42···核心金屬 43…琺瑯層 44…發光元件 45…打線 46…封裝樹脂 47…電極 48…反射杯部 49a…底部 49b…斜面部 29a···底部 211...light-emitting element 2...wire 3...substrate 4...electrode 5···encapsulation resin 6...reflector 6a...beveled surface 7...insulating layer 8...heat-dissipating metal plate 9...light-emitting element 10...wired ll···substrate 12 ^ ·Electrical & 13...Encapsulation resin 20...Light-emitting element 21... 法法乡板22...core metal 23... 法法乡24...light-emitting element 25...wire 26...packaging resin 27...electrode 28...reflecting cup portion 29b ... slanted surface 30... illuminating element 31... 珐琅 substrate 32... core metal 33... 琅 琅 layer 34... illuminating element 35... Threading 36... encapsulating resin 37... electrode 38... reflecting cup portion 39a... bottom 39b... slanting surface 40... illuminating Element 41... 法法乡板42···core metal 43...珐琅 layer 44...light-emitting element 45...wire 46...packaging resin 47...electrode 48...reflecting cup portion 49a...bottom 49b...beveled surface 29a···bottom 21
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| JP2004336132A JP4037404B2 (en) | 2004-11-19 | 2004-11-19 | Light emitting element mounting substrate and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI383523B (en) * | 2009-09-04 | 2013-01-21 | ||
| TWI412163B (en) * | 2010-10-18 | 2013-10-11 | Advanced Optoelectronic Tech | Led package structure and the method of manufacturing the same |
| TWI490426B (en) * | 2011-07-29 | 2015-07-01 | Light emitting device |
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| US7866853B2 (en) | 2004-11-19 | 2011-01-11 | Fujikura Ltd. | Light-emitting element mounting substrate and manufacturing method thereof, light-emitting element module and manufacturing method thereof, display device, lighting device, and traffic light |
| JP4091063B2 (en) * | 2005-06-07 | 2008-05-28 | 株式会社フジクラ | Light emitting element mounting substrate and light emitting element module |
| KR101017917B1 (en) * | 2005-06-07 | 2011-03-04 | 가부시키가이샤후지쿠라 | Substrate for light-emitting device mounting, light-emitting device module, illuminating device, display and traffic signal device |
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| CN100565948C (en) | 2005-06-30 | 2009-12-02 | 松下电工株式会社 | Light-emitting device |
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| JP2009038202A (en) * | 2007-08-01 | 2009-02-19 | Fujikura Ltd | Substrate for mounting light emitting device, light emitting device module, lighting device, display device, and traffic light |
| KR100986397B1 (en) * | 2010-02-08 | 2010-10-08 | 엘지이노텍 주식회사 | Light emitting apparatus |
| TWI398026B (en) * | 2010-04-28 | 2013-06-01 | Advanced Optoelectronic Tech | Light emitting element and light emitting module having the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI383523B (en) * | 2009-09-04 | 2013-01-21 | ||
| TWI412163B (en) * | 2010-10-18 | 2013-10-11 | Advanced Optoelectronic Tech | Led package structure and the method of manufacturing the same |
| TWI490426B (en) * | 2011-07-29 | 2015-07-01 | Light emitting device |
Also Published As
| Publication number | Publication date |
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| JP4037404B2 (en) | 2008-01-23 |
| TW200802922A (en) | 2008-01-01 |
| JP2006147865A (en) | 2006-06-08 |
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