TWI303002B - Methods for forming photosensitive insulating film pattern and reflection electrode each having irregular upper surface and method for manufacturing lcd having reflection electrode using the same - Google Patents

Description

1303002 A7 ______ B7 五、發明説明（1 ) 發明背景 1.發明領域 本發明係關於用以製造反射式LCD(液晶顯示器）以及 反射穿透複合式LCD的方法，更特定言之，本發明係關於 用以形成各具有一非均勻上表面的光敏絕緣膜圖案與反射 電極的方法，以及一種利用前述方法來製造一具有反射電 極之LCD的方法。 2·相關技藝之敘述 現今’在以資訊為導向的社群裡，電子顯示器的角色 愈形重要。所有種類的電子顯示器均被廣泛地用於各種產 業領域裡。隨著電子顯示器此領域的技術持續發展，各種 具有新功能的電子顯示器乃相應於資訊導向社群的不同需 一 求而誕生。 一般而言，電子顯示器是一種用於將資訊視覺傳輸至 個人的裝置。亦即，電子顯示器可被定義為一種電子裝置， 其將各種電子設備所輸出的電子資訊轉換成為視覺上可辨 識的光學資訊訊號。其亦可被定義為一種做為用以連接個 人與電子設備之橋樑的電子裝置。 此等電子顯示器被分類成放射式顯示器，其中光學資 rfUfL號係藉由一發光方法來顯示，以及非放射式顯示器， 其中訊號係藉由一諸如光-反射、分散與干涉現象等光學調 控方法來顯示。由於放射式顯示器被稱為主動式顯示器， 故CRT(陰極射線管）、PDP(電漿顯示面板）、LED(發光二極 體）及ELD(電致發光顯示器）等均可謂之。由於非放射式顯 本紙張尺度適用中關家_ (⑽）A4规格⑵QX297公董） 1 ------- (請先閲讀背面之注意事項再填窝本頁) 、^τ— ►線丨 4 1303002 A7 —1 B7 五、發明説明（1 2 ) 示器被稱為被動式顯示器，LCD(液晶顯示器）與EPID(電泳 顯像顯示器）等可謂之。 長期以來，CRT已供用於諸如電視接收器與電腦監視 器等影像顯示裝置。雖然CRT在顯示品質與經濟效益等方 面具有最高的市場評價，但亦具有諸如過重、體積過大及 高耗能等許多缺點。 同時’隨著多種電子裝置因半導體技術的快速發展而 變得更小更輕’且電子裝置更堅固、更低電壓及低耗能， 則因應新環境需要一種平面型顯示器，其具有較薄且輕之 性質，並具有較低的驅動電壓與較低度之耗能等特性。 在各式各樣被發展出的平面型顯示器當中，LCD遠較 任何其他顯示器更為薄且更輕，且其具有較低之驅動電壓 及較低度之耗能。再者，LCD具有與CRT類似的顯示品質。 因此，LCD被廣泛地用於各種電子裝置。又，因為乙(：1)易 於製造，故其應用逐漸擴大。 LCD被分類為穿透sLCD以及反射式LCD，前者利用 一外部光源來顯示影像，而後者利用環境光線而非外部光 源來顯示影像。 反射式LCD具有耗能較低之優點，且較投射式lcd展 現出更佳的戶外顯示性。再者，因為不需要諸如背光裝置 4額外光源，故反射式LCD既薄且輕。 然而，目前的反射式LCD具有一黑色屏幕，且無法展 現出高清晰度及多彩影像。因此，反射式㈣仍侷限地用 於僅需要-諸如數字或簡單字母等簡單圖案之顯示器的產1303002 A7 ______ B7 V. INSTRUCTION DESCRIPTION (1) BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a reflective LCD (liquid crystal display) and a reflective through composite LCD, and more particularly, the present invention relates to A method for forming a photosensitive insulating film pattern and a reflective electrode each having a non-uniform upper surface, and a method of manufacturing an LCD having a reflective electrode by the aforementioned method. 2. Narrative of Related Techniques Today, the role of electronic displays is becoming more important in an information-oriented community. All kinds of electronic displays are widely used in various industrial fields. As the technology of electronic displays continues to evolve, various electronic displays with new functions are born in response to the different needs of the information-oriented community. In general, an electronic display is a device for visually transmitting information to an individual. That is, an electronic display can be defined as an electronic device that converts electronic information output by various electronic devices into visually identifiable optical information signals. It can also be defined as an electronic device that acts as a bridge between a person and an electronic device. The electronic displays are classified into a radial display, wherein the optical resource rfUfL is displayed by a light-emitting method, and the non-radiation display, wherein the signal is controlled by an optical control method such as light-reflection, dispersion, and interference. To show. Since a radial display is called an active display, a CRT (cathode ray tube), a PDP (plasma display panel), an LED (light emitting diode), and an ELD (electroluminescence display) can be referred to. Due to the non-radiation type of paper size for the Zhongguanjia _ ((10)) A4 specifications (2) QX297 Gongdong) 1 ------- (Please read the back of the note before refilling this page), ^τ - ► line丨 4 1303002 A7 — 1 B7 V. Description of the invention (1 2 ) The display is called passive display, LCD (liquid crystal display) and EPID (electrophoretic display). CRTs have long been used in image display devices such as television receivers and computer monitors. Although CRT has the highest market evaluation in terms of display quality and economic efficiency, it also has many shortcomings such as overweight, oversize and high energy consumption. At the same time, 'as many electronic devices become smaller and lighter due to the rapid development of semiconductor technology' and the electronic devices are stronger, lower voltage and lower energy consumption, a flat type display is required in response to the new environment, which is thin and Light nature, and has lower drive voltage and lower energy consumption. Among the various flat displays that have been developed, the LCD is much thinner and lighter than any other display, and it has a lower driving voltage and lower power consumption. Furthermore, the LCD has a display quality similar to that of a CRT. Therefore, LCDs are widely used in various electronic devices. Also, since B (:1) is easy to manufacture, its application is gradually expanding. LCDs are classified as penetrating sLCDs and reflective LCDs that use an external source to display an image, while the latter uses ambient light instead of an external source to display the image. Reflective LCDs have the advantage of lower energy consumption and exhibit better outdoor display than projected LCDs. Moreover, the reflective LCD is both thin and light because no additional light source such as the backlight 4 is required. However, current reflective LCDs have a black screen and are not capable of exhibiting high definition and colorful images. Therefore, the reflective (4) is still limited to the production of displays that only require simple patterns such as numbers or simple letters.

——·*:「；«Ι:Ί:# 裝！ (請先閲讀背面之注意事項再填寫本頁) •、可| 5 1 ___— 2 本紙張尺度適用中國國家標準（CNS) A4規格（21〇X297公 --- 1303002 A7 B7 3 五、發明説明（ 品中。 (請先閲讀背面之注意事項再填窝本頁) 為使反射式LCD能供用於各種電子裝置，高清晰度與 多彩顯示以及增進的反射發光係為必須。另外，適當的亮 度、快速的反應速度以及增進的反差亦為必須。 在現今的反射式LCD中，已結合兩種技術來增進亮 度。一者增進反射電極的反射效率，而另一者則獲致超高 的穿孔比例。在發明名稱為「具有位在反射器上之凸塊的 反射式液晶顯示裝置」的美國專利第5,610,741號中·， Naofumi Kimura揭露一種藉由將凸塊形成於反射電極上來 增進反射效率的方法。 、可| 第1圖為前述美國專利案中所提供之反射式LCD裝置 的部分平面圖，而第2圖為第1圖之反射式Lcd裝置的截面 圖0 請參見第1及2圖，反射式LCD裝置包含有第一基板 10’面對第一基板10的第二基板15，以及嵌設於第一及第 二基板10及15之間的液晶層2〇。 第一基板10包括第一絕緣基板30，第一絕緣基板3〇上 形成有數個閘極匯流排佈線25。閘極35從閘極匯流排佈線 25分出。另外，設有數個源極匯流排佈線4〇，俾正交於該 等閘極匯流排佈線25，並因一位於源極匯流排佈線4〇與閘 極匯流排佈線25間之絕緣層而與之維持絕緣。源極45係從 源極匯流排佈線40分出。 反射電極50形成於第一基板1〇與液晶層2〇之間，並位 於藉由閘極匯流排佈線25與源極匯流排佈線4〇的交錯所形——·*: “;«Ι:Ί:#装! (Please read the notes on the back and fill out this page) •, 可 | 5 1 ___— 2 This paper scale applies to the Chinese National Standard (CNS) A4 specification ( 21〇X297公--- 1303002 A7 B7 3 V. Description of the invention (in the product. (Please read the note on the back and fill the nest page first). In order to make the reflective LCD available for various electronic devices, high definition and colorful Display and enhanced reflected illumination are necessary. In addition, proper brightness, fast response speed, and improved contrast are also necessary. In today's reflective LCDs, two techniques have been combined to enhance brightness. The reflection efficiency is the other, and the other is to obtain an ultra-high perforation ratio. In the U.S. Patent No. 5,610,741, entitled "Reflective Liquid Crystal Display Device with Bumps on the Reflector", Naofumi Kimura discloses a A method for improving the reflection efficiency by forming a bump on a reflective electrode. Fig. 1 is a partial plan view of a reflective LCD device provided in the aforementioned U.S. Patent, and Fig. 2 is a reflective view of Fig. 1. Cross-sectional view of the Lcd device. Referring to FIGS. 1 and 2, the reflective LCD device includes a second substrate 15 having a first substrate 10' facing the first substrate 10, and embedded in the first and second substrates 10 and 15 The first substrate 10 includes a first insulating substrate 30, and a plurality of gate bus lines 25 are formed on the first insulating substrate 3. The gate 35 is branched from the gate bus line 25. And a plurality of source bus bar wirings 4 〇 orthogonal to the gate bus bar wiring 25 and being insulated by an insulating layer between the source bus bar wiring 4 〇 and the gate bus bar wiring 25 The insulation is maintained. The source 45 is branched from the source bus bar wiring 40. The reflective electrode 50 is formed between the first substrate 1 and the liquid crystal layer 2, and is located on the bus bar and the source bus bar by the gate bus bar 25 Interleaved wiring

6 1303002 A7 B7 五、發明説明（4 ) 成的數個矩形區域内。 (請先閲讀背面之注意事項再填寫本頁) 反射電極50與一被形成於第一基板10上的TFT裝置55 相連接，TFT裝置55係做為閘極匯流排佈線25與源極匯流 排佈線40的一個切換裝置。 在反射電極50的表面上設置數個凹部70與71，藉此， 使得該表面凹凸不平。該等凹部70與71係不規則地被設置 在整個表面上。反射電極60及TFT裝置55之一沒極經由一 接觸孔65而彼此連接。 藉由利用一濺鍍法來沈積鈕（Ta)膜，並利用蝕刻或黃 光微影製程將經沈積之Ta膜予以圖案化，從而在由諸如玻 璃所製成之第一絕緣基板30上形成閘極匯流排佈線25與閘 極35。 接著，形成閘極絕緣膜75以覆蓋閘極匯流排佈線25與 閘極35。閘極絕緣膜75係藉由諸如電漿CVD(化學蒸鍍沈積) 法來形成一個4000A厚之SiNx膜而完成。 非晶矽（a-Si)之半導體層80形成於位在閘極35上之閘 極絕緣層75上。具有經n+型雜質所摻雜之a-Si層的接觸層 85與90形成於半導體層80上。 隨後，在第一絕緣基板30上形成鉬（Mo)膜，以覆蓋以 前述方式所形成的膜，接著，將Mo膜予以圖案化，俾形成 源極匯流排佈線40、源極45以及汲極60。以此方式，包括 有閘極35、半導體層80、接觸層85與90、源極45以及汲極 60的TFT裝置55即完成。 在形成有TFT裝置55的絕緣基板30之整個表面上，順 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 1303002 A7 、發明説明（ 序形成一有機絕緣膜95與一反射電極5〇，其等各具有一凹 凸不平之表面。 第3 A及3B圖為一截面圖，其顯示出一種用於在第2圖 所示裝置中形成凸塊之方法的步驟。 請參見第3A圖，光阻膜1〇〇係藉由旋覆法而被形成在 第一絕緣基板30之表面上，以覆蓋鋁（A1)或鎳所構成之 南反射性金屬圖案55。金屬圖案55包括諸如TFT之源極、 汲極或貯存電極。其後，將光阻膜1〇〇予以預燒焙。 隨後，將光罩110設置在經塗佈之光阻膜1〇〇上，在光 罩110中形成有透光區105與光屏蔽1〇6而呈一預定圖案，接 著進行曝光與顯影程序，以形成第3B圖所示之對應於光罩 11 〇之圖案的凸塊115。當進行基板之熱處理時，會形成經 倒角的凸塊115。 再次參看第2圖，有機絕緣膜95係藉由諸如旋覆法來施 加，以覆蓋凸塊115，藉此，經形成之有機絕緣膜95的表面 因凸塊115而變得凹凸不平。 隨後’第2圖所示反射式LCD中，有機絕緣膜95係利用 一光罩（未示出）而被圖案化，以形成暴露出TFT裝置55之汲 極60之一表面的接觸孔65。以反射電極材料來填充接觸孔 65。反射電極材料係藉由真空沈積法來形成。結果是，凹 部70與71被形成在反射電極5〇之表面，而使得該等凹部具 有對應於有機絕緣膜95之形狀的形狀。 其後’在反射電極50與有機絕緣層95上形成第一配向 膜120，從而完成第一基板1〇。 本紙張尺度適用中國國家標準（CNS) A4規格（210X2975) 1303002 A7 ______B7 _ 五、發明説明（6 ) 第二基板15包括第二絕緣基板14〇，而彩色濾光片 125、共同電極130及第二配向膜135被形成於第二絕緣基板 140 上。 第二絕緣基板140係由玻璃所製成。對應於單元像素的 彩色濾光片125係形成在第二絕緣基板14〇上。彩色濾光片 125上形成有由一諸如氧化銦錫（IT〇)等透明材料所製成的 共同電極130。第二配向膜135係形成在共同電極13〇上，從 而完成第二基板15。 將第二基材15設置成面對於第一基板10，隨後藉由真 空輸注法，將包括液晶材料21與染料22之液晶層2〇注入一 介於第一基板10與第二基板15間之空間内，從而完成反射 式 LCD。 另一種用於形成前述凹凸結構的習用方法為利用光敏 有機絕緣膜。此方法僅藉由利用單一種材料層，而非如第 2、3A與3B圖所示係利用光阻膜1〇〇與有機絕緣膜％二種薄 層，即能形成具有凹凸表面構造的絕緣層。換言之，將光 敏有機絕緣膜予以塗覆，以取代第3A圖所示之光阻膜 100。針對该光敏有機絕緣層進行一習用黃光微影製程，藉 此形成凸塊、凹部與接觸孔。其後，將所得基板移轉至2 射電極形成程序中之後續流程。 然而，依據製造反射式LCD的習用方法，雖然該等被 形成於反射電極中之凹部會增加反射效率，但其等亦 致下述的某些問題。 曰 參見第3A及3B圖，在前述方法中，包括有凸塊出與 1紙張尺度適用中國國家標準_ M規格⑵〇x29?J^ —----- (請先閲讀背面之注意事項再填寫本頁) 、?τ— 冒線丨 9 13030026 1303002 A7 B7 V. INSTRUCTIONS (4) In a number of rectangular areas. (Please read the precautions on the back side and fill out this page.) The reflective electrode 50 is connected to a TFT device 55 formed on the first substrate 10, and the TFT device 55 is used as the gate bus bar wiring 25 and the source bus bar. A switching device of the wiring 40. A plurality of concave portions 70 and 71 are provided on the surface of the reflective electrode 50, whereby the surface is uneven. The recesses 70 and 71 are irregularly disposed on the entire surface. One of the reflective electrode 60 and the TFT device 55 is connected to each other via a contact hole 65. The gate (Ta) film is deposited by a sputtering method, and the deposited Ta film is patterned by an etching or yellow lithography process to form a gate on the first insulating substrate 30 made of, for example, glass. The bus bar wiring 25 and the gate 35 are provided. Next, a gate insulating film 75 is formed to cover the gate bus line wiring 25 and the gate 35. The gate insulating film 75 is completed by forming a 4000 A thick SiNx film by, for example, a plasma CVD (Chemical Vapor Deposition) method. A semiconductor layer 80 of amorphous germanium (a-Si) is formed on the gate insulating layer 75 on the gate 35. Contact layers 85 and 90 having an a-Si layer doped with an n+ type impurity are formed on the semiconductor layer 80. Subsequently, a molybdenum (Mo) film is formed on the first insulating substrate 30 to cover the film formed in the foregoing manner, and then the Mo film is patterned to form the source bus bar wiring 40, the source 45, and the drain 60. In this manner, the TFT device 55 including the gate 35, the semiconductor layer 80, the contact layers 85 and 90, the source 45, and the drain 60 is completed. On the entire surface of the insulating substrate 30 on which the TFT device 55 is formed, the Chinese National Standard (CNS) A4 specification (210×297 mm) 1303002 A7 is applied to the paper scale, and the invention description (the formation of an organic insulating film 95 and a reflective electrode) 5〇, each of which has an uneven surface. Figs. 3A and 3B are cross-sectional views showing a step of a method for forming a bump in the apparatus shown in Fig. 2. See Fig. 3A The photoresist film 1 is formed on the surface of the first insulating substrate 30 by a spin coating method to cover the south reflective metal pattern 55 composed of aluminum (A1) or nickel. The metal pattern 55 includes, for example, The source, the drain or the storage electrode of the TFT. Thereafter, the photoresist film 1 is pre-baked. Subsequently, the photomask 110 is placed on the coated photoresist film 1 on the photomask 110. A light-transmissive region 105 and a light-shielding layer 〇6 are formed in a predetermined pattern, and then an exposure and development process is performed to form a bump 115 corresponding to the pattern of the reticle 11 所示 shown in FIG. 3B. When heat treated, a chamfered bump 115 is formed. 2, the organic insulating film 95 is applied by, for example, a spin coating method to cover the bumps 115, whereby the surface of the formed organic insulating film 95 becomes uneven due to the bumps 115. Subsequently, 'Fig. 2 In the reflective LCD shown, the organic insulating film 95 is patterned by a photomask (not shown) to form a contact hole 65 exposing a surface of one of the drain electrodes 60 of the TFT device 55. The contact hole 65 is filled. The reflective electrode material is formed by a vacuum deposition method. As a result, the recesses 70 and 71 are formed on the surface of the reflective electrode 5A such that the recesses have a shape corresponding to the shape of the organic insulating film 95. Thereafter, the first alignment film 120 is formed on the reflective electrode 50 and the organic insulating layer 95, thereby completing the first substrate 1〇. The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X2975) 1303002 A7 ______B7 _ V. SUMMARY OF THE INVENTION (6) The second substrate 15 includes a second insulating substrate 14A, and the color filter 125, the common electrode 130, and the second alignment film 135 are formed on the second insulating substrate 140. The second insulating substrate 140 is composed of Glass house A color filter 125 corresponding to the unit pixel is formed on the second insulating substrate 14A. The color filter 125 is formed with a common electrode made of a transparent material such as indium tin oxide (IT〇). 130. The second alignment film 135 is formed on the common electrode 13A, thereby completing the second substrate 15. The second substrate 15 is disposed to face the first substrate 10, and then includes a liquid crystal material 21 by vacuum infusion. The liquid crystal layer 2 of the dye 22 is injected into a space between the first substrate 10 and the second substrate 15, thereby completing the reflective LCD. Another conventional method for forming the aforementioned uneven structure is to use a photosensitive organic insulating film. This method can form an insulation having a concave-convex surface structure only by using a single material layer instead of using two thin layers of the photoresist film 1 and the organic insulating film as shown in FIGS. 2, 3A and 3B. Floor. In other words, the photosensitive organic insulating film is coated to replace the photoresist film 100 shown in Fig. 3A. A conventional yellow light lithography process is performed on the photosensitive organic insulating layer, thereby forming bumps, recesses, and contact holes. Thereafter, the resulting substrate was transferred to a subsequent process in the 2-electrode forming process. However, according to the conventional method of manufacturing a reflective LCD, although the recesses formed in the reflective electrode increase the reflection efficiency, they also cause some of the problems described below.曰 Refer to Figures 3A and 3B. In the above method, including the bump out and 1 paper scale applicable to the Chinese national standard _ M specification (2) 〇 x29? J ^ —---- (please read the notes on the back first) Fill in this page), ?τ - 冒线丨 9 1303002

凹部117的不規則表面結構係反射電極形成之前被形成在 光阻膜100的一表面上。因為圖案55係由具有高度反射性的 金屬所形成’諸如被形成在單元像素區内之光阻膜1 〇〇下部 處的源極、汲極與貯存電容電極者，且一介於金屬圖案55 上之光罩110的光遮蔽圖案112間的空間们係相同於一介於 未設有金屬圖案55之部分上之光罩的光遮蔽圖案112間的 空間dl，故於形成凹部117的曝光期間，光線83係從金屬圖 案55之上表面向上反射。因此，如第3B及4圖所示，具有 較所欲直徑為大之直徑的凹部i 17會被形成在光阻膜1〇〇 上’或其會較其他部分更深度地暴露於光線下。最糟糕時， 凹部會完全地被暴露於光線下，而致使非所欲之部分被暴 露出。 為避免非所欲部分的曝光問題，必須在光阻膜1〇〇之丁 部處另形成一絕緣膜。因此，製程更為複雜且製造成本亦 會增加。 此外，依據前述之習用反射式LCD，尺寸各不相同而 供作為微型鏡片的半球狀凹部係被形成，以增進反射效 率。然而，位於反射電極中未形成凹部處的凸部（即凸塊） 會依位置有別而具有不同的尺寸。因此，問題在於，整體 反射電極之反射性的均勻程度會劣化。亦即，因為未形成 凹部之部分的尺寸各不相同，則反射電極上形成有尺寸各 不相同之凹部的區域會具有不同的南度。因此，因為反射 電極會依區域有別而具有不同的反射性，故在反射電極之 反射性上均勻程度會劣化。如前所述，反射均勻性上之劣 本紙張尺度適用中國國家標準（0^) A4規格（210X297公釐） -10 - B7 五 1303002 、發明説明（8 化會致使液晶材料的方向不均一，而使得影像之反差退 化再者，液晶材料之方向不均一極可能因漏光而造成模 糊以及殘像。 在實際製造過程中，因為被形成於反射電極内之凹部 的尺寸以及.亥等凹部間之區域的尺寸彼此不同，則缺點在 於，實質上極難依設計數值而精確地控制凹部與凹部間之 空間的尺寸。 再者，雖然具有不同尺寸之凹部被形成為彼此重疊， c因其等具有半球形’故極難完全避免凹部處之入射光散 漫反射。因此，在改善影像品f上有其侷[ 又，習用反射式LCD基本上具有一呈四角形之像素形 狀。但是’因為當前諸如手機&LCDTv等多種資訊通信設 備的發展，故需要各種的像素尺寸。若必須將具有所欲尺 寸的像素施用於適用不同像素尺寸的顯示裝置上，則該顯 不裝置必須重新設計。製程條件必須再次確認亦是一個問 題。特別是，在諸如手機等在特定方向需要高度反射性的 電子顯不裝置之情形下，使料有四角形之像素 發明概述 因此，本發明之第-目的係在於，提供一種用於形成 一光敏絕緣膜的方法，該光敏絕緣膜具有-由均等凸部盥 凹部所構成的不均勻表面。 本發明之第二目的係在於’提供—種用於形成—反射 電極膜的方法，該反射電極臈具有—由均等凸部與凹 構成的不均勻表面。 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐）The irregular surface structure of the recess 117 is formed on a surface of the photoresist film 100 before the formation of the reflective electrode. Because the pattern 55 is formed of a highly reflective metal such as a source, a drain and a storage capacitor electrode formed at a lower portion of the photoresist film 1 in the unit pixel region, and one is interposed on the metal pattern 55. The space between the light shielding patterns 112 of the reticle 110 is the same as the space dl between the light shielding patterns 112 of the reticle on the portion where the metal pattern 55 is not provided, so that the light is formed during the exposure of the concave portion 117. The 83 series is reflected upward from the upper surface of the metal pattern 55. Therefore, as shown in Figs. 3B and 4, the recess i 17 having a diameter larger than the desired diameter is formed on the photoresist film 1' or it may be exposed to light more deeply than other portions. In the worst case, the recess is completely exposed to light, causing unwanted parts to be exposed. In order to avoid the exposure problem of the undesired portion, an insulating film must be formed at the portion of the photoresist film. Therefore, the process is more complicated and the manufacturing cost is also increased. Further, according to the conventional reflective LCD described above, hemispherical recesses which are different in size and are provided as microlenses are formed to enhance the reflection efficiency. However, the convex portions (i.e., the bumps) located at the recesses in the reflective electrode may have different sizes depending on the position. Therefore, there is a problem in that the degree of uniformity of the reflectance of the entire reflective electrode is deteriorated. That is, since the sizes of the portions where the concave portions are not formed are different, the regions on which the concave portions having different sizes are formed on the reflective electrodes may have different south degrees. Therefore, since the reflective electrodes have different reflectivities depending on the regions, the degree of uniformity in the reflectivity of the reflective electrodes is deteriorated. As mentioned above, the uniformity of reflection uniformity is applicable to the Chinese national standard (0^) A4 specification (210X297 mm) -10 - B7 51303002, invention description (8 will cause the direction of the liquid crystal material to be uneven, In addition, the contrast of the image is degraded, and the direction of the liquid crystal material may be uneven due to light leakage, and the afterimage may be caused by light leakage. In the actual manufacturing process, the size of the concave portion formed in the reflective electrode and the recess between the black and the other are The sizes of the regions are different from each other, and the disadvantage is that it is extremely difficult to precisely control the size of the space between the recess and the recess depending on the design value. Further, although the recesses having different sizes are formed to overlap each other, c has It is extremely difficult to completely avoid the diffuse reflection of the incident light at the concave portion. Therefore, there is a problem in improving the image product f. [The conventional reflective LCD basically has a quadrangular pixel shape. But 'because of the current such as mobile phones The development of various information communication devices such as &LCDTv requires a variety of pixel sizes. If it is necessary to apply a pixel of the desired size to On display devices with different pixel sizes, the display device must be redesigned. It is also a problem that the process conditions must be reconfirmed. In particular, in the case of a device such as a mobile phone that requires a highly reflective electronic display device in a particular direction. BACKGROUND OF THE INVENTION Accordingly, a first object of the present invention is to provide a method for forming a photosensitive insulating film having an uneven surface composed of uniform convex portions and depressions A second object of the present invention is to provide a method for forming a reflective electrode film having an uneven surface composed of uniform convex portions and concave portions. The paper scale is applicable to the Chinese National Standard (CNS). ) A4 size (210X297 mm)

、可I I 線I — J.....,·! (請先閲讀背面之注意事項再填寫本頁) 11 1303002 A7 ----- -B7 五、發明説明（1 ^ " 一 本發明之第三目的係在於，提供一種用於製造一具有 反射電極之LCD的方法，該方法特別適用於製造一具有 反射電極膜之LCD，該反射電極膜具有一由均等凸部與 凹部所構成的不均勻表面。 本發明之第四目的係在於，提供一種用於製造一具有 反射電極之LCD的方法’該反射電極具有—由均等凸部 與凹稍構成的不均勻表面，俾容許該反射電極在反射電 極的整個區域内具有相同反射性。 為達成本發明之第一目的，本案提供一種用於形成一 光敏絕緣膜的方法，該光敏絕緣膜具有一由均等凸部與凹 部所構成的不均勻表面。在前述方法中，光敏絕緣膜被形 成於基板上，該基板上形成有一具有反射性質之第一電 ^。令光敏絕緣膜暴露在光線下。將曝光後之光敏絕緣膜 予以顯影。於此，在對應於第一電極上部之第一圖案間進 订知描的光線之第一光量，與在對應於第一電極以外部分 之第二圖案間進行掃描的光線之第二光量不相同。 為達成本發明之第二目的，本案提供一種用於形成一 反射電極膜的方法，該反射電極膜具有一由均等凸部與凹 部所構成的不均勻表面。在前述方法中，光敏絕緣膜被形 成於一基板上，該基板上形成有一具有反射性質之第一電 極。令光敏絕緣膜暴露在光線下。將曝光後之光敏絕緣膜 予以顯影’以形成一具有由均等凸部與凹部所構成的不均 自表面之表面薄膜。具有對應於光敏絕緣膜表面之不均句 表面的反射電極被形成在光敏絕緣膜上。於此，在對應於 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 、可| 12 1303002 五、發明説明（] 第-電極上部之第—圖案間進行掃描的光線第—光量，斑 在對應於第一電極以外部 刀之第-圖案間進行掃描的光線 弟 '"无置不相同。 再者，為達成本發明之第三及四目的，本案提供一種 用於製造一個LCD的方法。名訢、+、士、，上 y 套在則述方法中，光敏絕緣膜被 形成於-基板上，該基板上形成有一具有反射性質之第一 電極。、令光敏絕緣膜暴露在光線下。將曝光後之光敏絕緣 膜予以顯〜’以形成—具有均等凸部與凹部的不均句表 面。在光敏絕緣膜上形成反射電極。形成—具有面對第一 基板之透明電極的第二基板。將一液晶層失設於第一基板 與第二基板之間。於此，在對應於第一電極上部之第一圖 案間進行掃描的光線之第一光量，與在對應於第一電極以 外部分之第二圖案間進行掃描的光線之第二光量不相同。 依據本發明，無論在光敏絕緣膜下部具有高反射性的 金屬圖案存在與否，具有均等寬度與深度的凹部均能被形 成在光敏薄膜的整個表面上，藉此，較習用反射式LCD具 有更為增進之反射效率以及顯著改良之反差與圖像品質的 反射式LCD能夠被實現。此外，因為反射電極係利用改良 之曝光與顯影方法來形成，故可實質降低製造時間與成本。 凰式簡要說明 藉由參照檢附於後之圖式來詳述本發明之較佳具體 例，本發明之前述目的與其他優點將變得更為明確，其中： 第1圖為習用反射式LCD的部分平面圖； 第2圖為習用反射式LCD的截面圖； 本紙張尺度適用中國國家標準（CNS) A4規格（210 X 297公釐） 13 1303002 A7 __ B7 五、發明説明（U ) 第3A與3B圖為截面圖，其顯示一種用以形成有機絕緣 膜以及第2圖LCD之反射電極的方法； (請先閲讀背面之注意事項再填寫本頁) 第4圖為藉由第3A與3B圖之方法所形成在單元像素區 域處的反射電極之平面圖； 第5A與5B圖為依據本發明之第一具體例的截面圖，其 顯示一種用以形成一具有不規則表面之光敏絕緣膜的方 法； 第6A與6C圖為依據本發明之第二具體例的截面圖，其 顯不一種用以形成反射電極之不規則表面的方法； 第7圖為依據本發明第三具體例之具有反射電極之反 射式LCD的平面圖； 第8圖為沿著第7圖之A_A，線所得之截面概圖； 第9A至9D圖為顯示出一種用以製造第7及8圖之LCD 的方法之截面圖；以及 第10圖為依據本發明第二及第三具體例之反射電極輪 廓的平面圖。 較佳具體例之詳細教彼 現在，參照所檢附之圖式來詳述本發明之較佳具體例。 具體例1 第5A與5B1I為依據本發明之第一具體例的部分截面 圖’其用以解釋一種用以形成一具有不均勻表面之光敏絕 緣膜圖案的方法。 參照第5B圖，依據本發明，一種具有光敏絕緣膜圖案 之不均勻表面的裝置包括有一基板24〇、一被形成在基板 本紙張尺度適用中關家標準（CNS) M規格（21G><297公變） -14 - 1303002 A7 B7 I ΓΪ2~； 五、發明説明（ ） 240上之金屬圖案250、一被形成在包括有金屬圖案250之基 板240上的光敏絕緣膜280。 (請先閲讀背面之注意事項再填寫本頁) 基板240係由非導電材料所製成，亦即，由一具有諸如 玻璃、陶瓷等低度反射性的絕緣材料所製成。 金屬圖案250係由一諸如A卜Cr、Cu、W、Ta、Mo、 Ti等具有高度反射性之金屬材料所形成。金屬圖案250可具 有一雙層結構，其中下層係由Cr所製成，而上層則由A1所 製成。 由諸如光阻等材料所構成之光敏絕緣膜280被疊設在 基板240上，該基板上形成有金屬圖案250。在光阻絕緣膜 280之上表面上，形成有凹部284以及位於較凹部284更高處 的凸塊（凸起）282。換言之，光敏絕緣膜280有一具有不均 勻構造之上表面。光敏絕緣膜280可包括一光敏有機絕緣膜 以及一光敏無機絕緣膜。 隨後，參照所檢附之圖式來詳述一種用以形成具有不 均勻表面之光敏絕緣膜圖案的方法。 參照第5A圖，在由諸如玻璃、陶瓷等絕緣材料所形成 之基板240上，沈積一諸如Ta、Ti、Mo、A卜Cr、Cu、W 等之金屬。接著，將經沈積之金屬予以圖案化，以形成金 屬圖案250。於此時，金屬圖案250可一由Al-Cu所構成之鋁 合金或一由Al-Si-Cu所構成之含鋁合金所形成。 其後，藉由旋覆法，在包括有金屬圖案250之基板240 上形成光敏絕緣膜280，達至一為約1至3 μτη之厚度。於此 時，光敏絕緣膜280可由一含有光活性化合物（PAC)之丙烯 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐） 15 1303002 A7 ------------B7 _ 發明説明（13 ) ' 酸系樹脂所形成。 接著’將一用於形成不均勻表面結構之光罩3〗〇定位在 光敏絕緣膜280上。 通過金屬圖案250被定位在光敏絕緣膜280下部處之第 一 4刀的第二光量係較通過未設有金屬圖案25〇處之第一 4刀的第一光量為低，以使得被形成在光敏絕緣膜280上表 面處的不均勻表面具有均等之凸部與凹部（均一輪廓）。 如第5A圖所示，具有透光區205、215與光遮蔽圖案 21〇、212的光罩3丨〇内，位在對應於金屬圖案25〇上部之第 一邓为上的光遮蔽圖案212間之空間d2，係以一所欲之比例 而小於位在對應於未設有金屬圖案25〇處之第一部分上部 的光遮蔽圖案210間之空間dl。該比例可依金屬圖案250的 反射性而變化。較佳地，該比例為約1/2。 接著，在光罩310對準於光敏絕緣膜28〇後，藉由一曝 光程序將光敏絕緣膜280予以曝光，並接著進行顯影程序。 結果，如第5B圖所示，數個具有均等寬度與深度的凹部 284、286被形成於光敏絕緣膜28〇的上表面。亦即，被形成 在設有金屬圖案250處之部分的凹部286具有與被形成在未 設有金屬圖案250處之部分的凹部284相同之深度。因此， 被光敏絕緣膜280之凹部所包圍的部分具有位於較凹部 284、286為咼的凸起形狀。該等凸起具有相同的高度。 任擇地，第二部分之光量可以不同於第一部分之光 量，此與第5A圖之方法不相同。換言之，位在第二部分的 光遮蔽圖案212間之空間d2係相同於第一部分的光遮蔽圖 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐）> ---- -16 -, II Line I — J.....,·! (Please read the notes on the back and fill out this page) 11 1303002 A7 ----- -B7 V. Invention Description (1 ^ " A Invention A third object is to provide a method for fabricating an LCD having a reflective electrode, the method being particularly suitable for fabricating an LCD having a reflective electrode film having a uniform convex portion and a concave portion. Non-uniform surface. A fourth object of the present invention is to provide a method for manufacturing an LCD having a reflective electrode having a non-uniform surface composed of uniform convex portions and concave portions, and allowing the reflective electrode Having the same reflectivity in the entire area of the reflective electrode. To achieve the first object of the present invention, the present invention provides a method for forming a photosensitive insulating film having a uniform convex portion and a concave portion. A uniform surface. In the foregoing method, a photosensitive insulating film is formed on a substrate, and a first electrode having a reflective property is formed on the substrate. The photosensitive insulating film is exposed to light. The photosensitive insulating film is developed. Here, the first light amount of the light which is defined between the first patterns corresponding to the upper portion of the first electrode and the light which is scanned between the second pattern corresponding to the portion other than the first electrode The second light quantity is different. In order to achieve the second object of the present invention, the present invention provides a method for forming a reflective electrode film having an uneven surface composed of uniform convex portions and concave portions. In the method, a photosensitive insulating film is formed on a substrate, and a first electrode having a reflective property is formed on the substrate. The photosensitive insulating film is exposed to light. The exposed photosensitive insulating film is developed to form a a surface film formed by a uniform convex portion and a concave portion, and a reflective electrode having a surface corresponding to the unevenness of the surface of the photosensitive insulating film is formed on the photosensitive insulating film, and is applicable to China in accordance with the paper scale. National Standard (CNS) A4 Specification (210X297 mm) (Please read the notes on the back and fill out this page). Yes | 12 1303002 V. INSTRUCTIONS () The amount of light that is scanned between the first and the upper portions of the first electrode - the amount of light, the spot is corresponding to the light that is scanned between the first pattern of the outer electrode and the pattern of the outer knife. In order to achieve the third and fourth objects of the present invention, the present invention provides a method for manufacturing an LCD. In the method of the present invention, a photosensitive insulating film is formed on a substrate, Forming a first electrode having a reflective property on the substrate, exposing the photosensitive insulating film to light, and exposing the exposed photosensitive insulating film to form an uneven surface having uniform convex portions and concave portions. A reflective electrode is formed on the insulating film, and a second substrate having a transparent electrode facing the first substrate is formed. A liquid crystal layer is lost between the first substrate and the second substrate. Here, the first light amount of the light scanned between the first patterns corresponding to the upper portion of the first electrode is different from the second light amount of the light scanned between the second patterns corresponding to the portions other than the first electrode. According to the present invention, regardless of the presence or absence of a highly reflective metal pattern in the lower portion of the photosensitive insulating film, recesses having a uniform width and depth can be formed on the entire surface of the photosensitive film, whereby the reflective LCD has a more conventional appearance. A reflective LCD for improved reflection efficiency and significantly improved contrast and image quality can be realized. Further, since the reflective electrode is formed by an improved exposure and development method, the manufacturing time and cost can be substantially reduced. BRIEF DESCRIPTION OF THE DRAWINGS The foregoing and other advantages of the present invention will become more apparent from the detailed description of the preferred embodiments of the invention. Partial plan view; Figure 2 is a cross-sectional view of a conventional reflective LCD; This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 13 1303002 A7 __ B7 V. Invention Description (U) 3A and 3B is a cross-sectional view showing a method for forming an organic insulating film and a reflective electrode of the LCD of FIG. 2; (Please read the note on the back side and then fill in the page) Figure 4 is a drawing of Figures 3A and 3B. A plan view of a reflective electrode formed at a unit pixel region; FIGS. 5A and 5B are cross-sectional views showing a first embodiment of the present invention, showing a method for forming a photosensitive insulating film having an irregular surface 6A and 6C are cross-sectional views showing a second embodiment of the present invention, showing a method for forming an irregular surface of a reflective electrode; and Fig. 7 is a view showing a reflective electrode according to a third specific example of the present invention; Counter FIG. 8 is a cross-sectional view of the line taken along line AA of FIG. 7; and FIGS. 9A to 9D are cross-sectional views showing a method for fabricating the LCD of FIGS. 7 and 8; And Fig. 10 is a plan view showing the outline of the reflective electrode according to the second and third specific examples of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will now be described in detail with reference to the attached drawings. Specific Example 1 Sections 5A and 5B1I are partial cross-sectional views of a first embodiment of the present invention for explaining a method for forming a photosensitive insulating film pattern having an uneven surface. Referring to Fig. 5B, in accordance with the present invention, an apparatus having a non-uniform surface of a photosensitive insulating film pattern includes a substrate 24A, which is formed on the substrate in accordance with the Kansas Standard (CNS) M specification (21G>< 297 GM) -14 - 1303002 A7 B7 I ΓΪ2~; V. Description of Invention ( ) A metal pattern 250 on 240, a photosensitive insulating film 280 formed on a substrate 240 including a metal pattern 250. (Please read the precautions on the back and fill out this page.) The substrate 240 is made of a non-conductive material, that is, an insulating material having low reflectivity such as glass or ceramic. The metal pattern 250 is formed of a highly reflective metal material such as Ab, Cr, Cu, W, Ta, Mo, Ti, or the like. The metal pattern 250 may have a two-layer structure in which the lower layer is made of Cr and the upper layer is made of A1. A photosensitive insulating film 280 composed of a material such as a photoresist is stacked on a substrate 240 on which a metal pattern 250 is formed. On the upper surface of the photoresist film 280, a concave portion 284 and a bump (projection) 282 located higher than the concave portion 284 are formed. In other words, the photosensitive insulating film 280 has a surface having a non-uniform structure. The photosensitive insulating film 280 may include a photosensitive organic insulating film and a photosensitive inorganic insulating film. Subsequently, a method for forming a photosensitive insulating film pattern having a non-uniform surface will be described in detail with reference to the attached drawings. Referring to Fig. 5A, a metal such as Ta, Ti, Mo, Ab, Cr, Cu, W or the like is deposited on a substrate 240 formed of an insulating material such as glass or ceramic. Next, the deposited metal is patterned to form a metal pattern 250. At this time, the metal pattern 250 may be formed of an aluminum alloy composed of Al-Cu or an aluminum alloy composed of Al-Si-Cu. Thereafter, a photosensitive insulating film 280 is formed on the substrate 240 including the metal pattern 250 by a spin coating method to a thickness of about 1 to 3 μτη. At this time, the photosensitive insulating film 280 can be applied to a acryl paper containing a photoactive compound (PAC) according to the Chinese National Standard (CNS) Α 4 specification (210×297 mm) 15 1303002 A7 ----------- -B7 _ Description of invention (13) 'Formed by an acid resin. Next, a photomask 3 for forming a non-uniform surface structure is positioned on the photosensitive insulating film 280. The second amount of light of the first 4 knives positioned at the lower portion of the photosensitive insulating film 280 by the metal pattern 250 is lower than the first amount of light passing through the first 4 knives where the metal pattern 25 is not provided, so that it is formed at The uneven surface at the upper surface of the photosensitive insulating film 280 has uniform convex portions and concave portions (uniform outline). As shown in FIG. 5A, in the mask 3 having the light transmitting regions 205, 215 and the light shielding patterns 21, 212, the light shielding pattern 212 located on the first Deng corresponding to the upper portion of the metal pattern 25 is formed. The space d2 between the spaces is smaller than the space d1 between the light shielding patterns 210 corresponding to the upper portion of the first portion where the metal pattern 25 is not provided. This ratio may vary depending on the reflectivity of the metal pattern 250. Preferably, the ratio is about 1/2. Next, after the photomask 310 is aligned with the photosensitive insulating film 28, the photosensitive insulating film 280 is exposed by an exposure process, and then a developing process is performed. As a result, as shown in Fig. 5B, a plurality of concave portions 284, 286 having uniform widths and depths are formed on the upper surface of the photosensitive insulating film 28A. That is, the concave portion 286 formed at a portion where the metal pattern 250 is provided has the same depth as the concave portion 284 formed at a portion where the metal pattern 250 is not provided. Therefore, the portion surrounded by the concave portion of the photosensitive insulating film 280 has a convex shape in which the concave portions 284, 286 are meandering. The projections have the same height. Optionally, the amount of light in the second portion may be different from the amount of light in the first portion, which is different from the method of Figure 5A. In other words, the space d2 between the light-shielding patterns 212 of the second portion is the same as the light-shielding pattern of the first portion. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm)> -

(請先閲讀背面之注意事項再填寫本頁) 、可| r線丨 1303002 A7 B7 ^""""""' J4~； ------- 五、發明説明（ ） 案210間之空間dl’並使用其上另形成有一半透明薄膜的半 色調光罩，俾以降低位在第二部分之透光區2丨5之表面處的 入射光穿透量。接著，以與前述者相同之方法來進行後續 曝光程序與顯影程序。 具體例2 第6A與6C圖為依據本發明之第二具體例的截面圖，其 顯示一種用以形成反射電極之不均勻表面的方法。 在此一具體例中，通過對應於定位有金屬圖案35〇處之 光敏絕緣膜380之第二部分内的凹部之光罩第二透光區的 第二光量，係低於通過對應於未設有金屬圖案35〇處之光敏 絕緣膜380之第一部分内之凹部之光罩第一透光區的第一 光量，此方式與具體例1相同。 如第6A與6B圖所示，在符合於前述條件的諸多方法具 體例S中，一種用以形成具有不均勻表面之光敏絕緣膜的 方法係相同於具體例1。因此，相關敘述乃被刻意省略。 參照第6C圖，光敏絕緣膜38〇之凹部形成程序使得具 有高反射性之金屬圖案350被定位處的第二部分具有與未 設有金屬圖案350處的第一部分相同之深度，在該程序完成 後，利用濺鍍法，將一諸如AhNi、Cr4Ag等金屬材料沈 積在光敏絕緣膜380上，達至一預定之厚度。接著，若有需 要，將經沈積之金屬材料予以圖案化成所欲的形狀，藉此 形成反射電極335。於此，反射電極335具有與位在反射電 極335下方之光敏絕緣膜相同的表面輪廓。換言之，反射電 極335具有包含相同深度之凹部384、386以及被凹部384、(Please read the notes on the back and fill out this page), can | r line 丨1303002 A7 B7 ^""""""' J4~; ------- V. Invention Description ( ) The space dl' between the 210 cases and a halftone mask on which another half of the transparent film is formed is used to reduce the amount of incident light penetration at the surface of the light-transmitting region 2丨5 of the second portion. Next, the subsequent exposure process and development process are carried out in the same manner as the foregoing. Specific Example 2 Figs. 6A and 6C are cross-sectional views showing a second embodiment of the present invention, showing a method for forming an uneven surface of a reflective electrode. In this specific example, the second light amount of the second light-transmissive region of the photomask corresponding to the concave portion in the second portion of the photosensitive insulating film 380 where the metal pattern 35 is positioned is lower than the pass corresponding to the unset The first light amount of the first light-transmitting region of the mask of the concave portion in the first portion of the photosensitive insulating film 380 having the metal pattern 35 is the same as that of the specific example 1. As shown in Figs. 6A and 6B, in the method S in accordance with the above-described conditions, a method for forming a photosensitive insulating film having a non-uniform surface is the same as that of the specific example 1. Therefore, the relevant narrative is deliberately omitted. Referring to FIG. 6C, the concave portion forming process of the photosensitive insulating film 38 is such that the second portion where the highly reflective metal pattern 350 is positioned has the same depth as the first portion where the metal pattern 350 is not provided, and the process is completed. Thereafter, a metal material such as AhNi, Cr4Ag or the like is deposited on the photosensitive insulating film 380 by sputtering to a predetermined thickness. Next, if necessary, the deposited metal material is patterned into a desired shape, thereby forming a reflective electrode 335. Here, the reflective electrode 335 has the same surface profile as the photosensitive insulating film positioned under the reflective electrode 335. In other words, the reflective electrode 335 has recesses 384, 386 and recesses 384 that include the same depth,

本紙張尺度適用中國國家標準（〇β；) A4規格（210X297公D (請先閲讀背面之注意事項再填寫本頁) .訂— 線！ 17 1303002 A7 B7 五、發明説明（15 ) 386所包圍之凸部382的輪廓。凸部382係位在較凹部384、 386為高之位置。 (請先閲讀背面之注意事項再填寫本頁) 具體例3 第7圖為依據本發明第三具體例之具有含凸部與凹部 之反射電極之反射式LCD的平面圖，而第8圖為沿著第7圖 之A-A’線所得之截面概圖。 參照第7及8圖，反射式LCD 400包括第一基板410，第 一基板410上形成有像素，一面對第一基板410之第二基板 420，夾設於第一基板410與第二基板420間之液晶層430， 以及一反射電極435，反射電極435為一被形成於第一基板 410與液晶層430之間的像素電極。 第一基板410包括第一絕緣基板440以及一個TFT(薄 膜電晶體）445，TFT 445為一被形成於第一絕緣基板440之 切換裝置。 第一絕緣基板440係由諸如玻璃或陶瓷等非導電材料 所形成。TFT 445包括一從閘極線450a分出之閘極450、一 閘極絕緣膜455、一半導體層460、一電阻接觸層465、一源 極470以及一汲極475。再者，在汲極475下方與第一絕緣基 板440上，形成一平行於閘極線450a的貯存電極線450c。貯 存電極450b被形成於汲極475下方。 閘極450係在第一絕緣基板440上從閘極線450a分出。 於此，閘極450具有一雙層結構，其中下層係由Cr所製成， 而上層則由A1所製成。 將由氮化矽（SixNy)所構成之閘極絕緣膜455疊設於第 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 18 1303002 A7 B7 五、發明説明（16 ) (請先閱讀背面之注意事項再填寫本頁) 一絕緣基板440的整個表面，第一絕緣基板440上形成有閘 極450、貯存電極450b及貯存電極線450c。接著，由非晶矽 半導體層460以及由n+型非晶矽所構成之電阻接觸層465被 形成在閘極絕緣膜455上，閘極絕緣膜455下方設有閘極 450 〇 以閘極450為中心，在電阻接觸層465與閘極絕緣膜455 上分別形成源極470及汲極475。源極470及汲極475係分別 由諸如Ta、Mo、Ti、Cr等金屬所形成。 將光敏絕緣膜480疊設於第一絕緣基板440上，第一絕 緣基板440上即形成TFT 445。令數個第一區（凹部）及具有 較高位差之第二區（凸部或凸起）形成於光敏絕緣膜480之 像素區（Pin)處，俾令光線散射。 任擇地，可將被形成於像素區（Pin)的第一與第二區延 伸至位在像素區之間的像素外區（Pout)。 光敏絕緣膜480中形成有一接觸孔485，俾以暴露出 TFT 445之汲極475的一個部分。 在接觸孔485之内表面以及光敏絕緣膜480上，形成有 反射電極435。反射電極435係經由接觸孔485而連接至汲極 475，以使得TFT 445與反射電極435呈電氣連接。 將第一配向膜500疊設在反射電極435上。 面對第一基板410之第二基板420包括第二絕緣基板 505、彩色濾光片510、共用電極515、第二配向膜520、相 差板525以及偏光板530。 第二絕緣基板505係由與第一絕緣基板440相同的玻璃 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 19 1303002 A7 B7 五、發明説明（17 ) 或陶瓷等材料所形成。接著，在第二絕緣基板505上形成相 差板525及偏光板530。彩色濾光片510設在第二絕緣基板 505之下部。在彩色濾光片510下方形成共用電極515與第二 配向膜520,以形成第二基板420。第二配向膜520與第一配 向膜500共同令液晶層430的液晶分子預先偏斜，而呈所欲 之角度。 數個隔件535、536夾設於第一基板410與第二基板420 之間，以形成一位在第一基板410與第二基板420之間的所 欲空間。將液晶層430導入位在第一及第二基板410、420 之間的空間内，藉此形成可應用於本具體例之反射式LCD 400 〇 第9A至9C圖為顯示出一種用以製造第7及8圖之LCD 的方法之截面圖。 在第9A至9C圖中，第7與8圖中之相同元件被標示以相 同的元件編號。 請參見第7、8及9A圖，首先，諸如Ta、Ti、Mo、A卜 Cp Cu或W等金屬材料被沈積在由諸如玻璃或陶瓷等絕緣 材料所製成之第一絕緣基板440的上部。隨後，將經沈積之 金屬予以圖案化，藉此形成閘極線450a、從閘極線450a分 出之閘極450、以及包括有貯存電極450b的電極線450c。此 時，閘極450與閘極線450a可由一由Al-Cu所構成之合金或 一由Al-Si-Cu所構成之合金所形成。 隨後，藉由電漿化學蒸鍍沈積法，將氮化矽沈積在包 括有閘極450之第一絕緣基板440的整個表面上，俾以形成 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂丨 一-線丨 20 1303002 A7 _B7 ___ 1 ο 五、發明説明（ ） 閘極絕緣膜455。 藉由電漿化學蒸鍍沈積法，在閘極絕緣膜4 5 5上形成一 非晶矽膜以及一經原位摻雜之n+型非晶矽膜。接著，將經 疊設之非晶矽膜以及n+型非晶矽膜予以圖案化，藉此，在 閘極絕緣膜455之一部分上形成半導體層460及電阻接觸層 465，閘極450則位於下方。 接著，在形成有所得結構之第一絕緣基板440上，再形 成一由諸如Ta、Ti、Mo、Al、Cr、Cu或W等金屬材料所構 成之金屬層。隨後，將經疊設之金屬層予以圖案化，以形 成一正交於閘極線450a之源極線（未顯示）、從源極線分出 之源極470以及汲極475。藉此，完成包括有閘極450之TFT 445、導體層460、電阻接觸層465、源極470、汲極475。於 此時，將閘極絕緣膜455嵌設於閘極線與源極線之間，以避 免閘極線與源極線相接觸。 在形成有TFT 445之第一絕緣基板440上，再藉由旋覆 法來形成光敏絕緣膜480，而達至一為約1〜3 μιη之厚度， 從而完成第一基板410。於此時，光敏有機絕緣膜或光敏無 機絕緣膜可供用做為光敏絕緣膜。在此具體例中，可使用 一含有光活性化合物（PAC)之丙烯酸系樹脂做為光敏有機 絕緣膜。 請參見第9Β圖，為了形成接觸孔485，將暴露出一對 應於接觸孔485之部分的第一光罩（未顯示）設置在光敏絕 緣膜480上，隨後進行第一曝光程序。暴露出一對應於凹部 之部分的第二光罩610設於其上，隨後進行第二曝光程序。 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) |裝丨 、τ. 『線丨 21 1303002 A7 ___ _B7 1Q ----—- 五、發明説明（） 其後進行顯影程序，從而在光敏絕緣膜48〇中形成用以部分 地暴露出沒極475的接觸孔485以及數個凹部。 一種用以在光敏絕緣膜480中形成接觸孔485的方法以 及一種用以在光敏絕緣膜4 8 〇中形成數個凹部的方法係被 詳述如後。 首先’為了形成接觸孔485,將具有一對應於接觸孔485 之圖案的第一光罩設置在光敏絕緣膜480上。接著，先藉由 全曝光程序（其中曝光程序係以將光敏絕緣膜480予以完全 曝光的光量來進行），將光敏絕緣膜480中對應於源極/汲極 470、475的部分予以曝光。 隨後，為了形成數個凹部或溝槽481，將用於形成微型 鏡片且對應於凹部或溝之圖案的第二光罩61〇設於光敏絕 緣膜480上。 依所使用之光阻種類不同，第二光罩610可具有一具有 與圖式所示圖案相反之形狀的圖案。 次又，藉由鏡片曝光程序（其中曝光程序係以適於形成 凸起的光量來進行），並利用第二光罩610，將對應於接觸 孔485之部分以外的光敏絕緣膜48〇予以曝光。 接著進行顯影程序，從而如第9B圖所示，在光敏絕緣 膜480中形成一暴露出源極/汲極47〇、4乃的接觸孔々μ。 又，數個不規則凹部（未顯示）亦被形成在光敏絕緣膜480之 表面。 為使在光敏絕緣膜48〇之上表面所形成的不均句表面 構造具有均等之輪靡（即凸部與凹部），以相同於具體例以 本紙張尺度適财關家鮮⑽） (請先閲讀背面之注意事項再填窝本頁) 、可| 線丨 22 曰曰 1303002 五、發明説明（2() 2的方式，所以通過下方設有金屬圖案（即源極/汲極 470,475、閘極450或貯存電極線45〇b)的第二部分之第二光 量，係低於通過下方未設有金屬圖案之第一部分内的第一 光量。 為此目的，如第9B圖所示，在包括有令入射光穿透的 透光區605、615與用以反射光線的光遮蔽圖案612、614之 光罩610的光遮蔽圖案612、614内，位在對應於金屬圖案 450、450b、470、475上部之第二部分的光遮蔽圖案614間 之空間d2，係以一所欲之比例而小於位在對應於下方未設 有金屬圖案450、450b、470、475之第一部分上部的光遮蔽 圖案612間之空間dl。該比例可依金屬圖案45〇、45〇b、47〇、 475的反射性而變化。較佳地，該比例為約1/2。 任擇地，第二部分之光量可以不同於第一部分之光 量，此與第9B圖之方法不相同。換言之，位在第二部分的 光遮蔽圖案614間之空間d2係相同於第一部分的光遮蔽圖 案012間之空間dl，並使用其上另形成有一半透明薄膜的半 色調光罩’俾以降低位在第二部分之透光區615之表面上的 入射光穿透Ϊ。接著’以與前述者相同之方法來進行後續 曝光程序與顯影程序。 請參見第9C圖，如前所述，在形成有數個凹部的光敏 絕緣膜480上，沈積有一諸如A卜Ni、Cr或Ag等具有高反 射性的金屬材料。隨後，將經沈積之金屬予以圖案化成為 所欲的構形’俾形成反射電極435。接著，將光阻劑塗佈在 在反射電極435之上部，並予以拋磨，從而形成用於令液 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) .訂— 23 1303002 A7 ____B7 τΐ ' " ------— 五、發明説明（） 層430之液晶分子朝所欲角度預先偏斜的第一配向膜5〇〇。 反射電極435具有與光敏絕緣膜480之表面相同的表面輪 廓。 (請先閲讀背面之注意事項再填窝本頁) 反射電極43 5可分成包含有數個形成於光敏絕緣膜480 之凹部481上的凹部之第一區490，以及包含有數個凸部以 做為鏡片區的第二區495。於此時，包含有連續溝槽（凹部） 的第一區490係較包含有數個凸部的第二區495為低。再 者，因為第一區490包圍著第二區495，所以反射電極435 具有第二區495被包含連續溝槽的第一區490所界定的一個 結構。 第10圖為依據本發明第二及第三具體例之反射電極輪 廊的平面圖。 請參見第10圖，由數個溝槽490與凸部495所構成且用 以形成反射電極435的形狀係依據設於反射電極43 5下方之 用以圖案化光敏絕緣膜的光罩圖案來決定。亦即，第丨〇圖 顯示出反射電極435之圖案構形，並於此時顯示出位在反射 電極43 5下方之光敏絕緣膜的構形或用以圖案化光敏絕緣 膜的光罩圖案。換言之，第9Β圖所示光罩亦具有如第1〇圖 所示之對應於數個凸部495的光遮蔽圖案以及對應於數個 溝槽490的透光區。 將苐10圖所示本發明具體例之反射電極與第4圖所示 之習用反射電極作比較時，依據本案具體例之反射電極43 5 無論下方的金屬圖案存在與否皆具有均等深度的溝槽與凸 部。 -------------------- 本紙張尺度適财ΗΗ家鮮（CNS) Α4規格(210X297公釐） " - 24 1303002 A7 五、發明説明（22 ) 較為低陷之數個溝槽（第一區）具有一為約丨〜5 μιη之寬 度。該等連續溝槽係被設置成在側向上具有恆定之寬度。 (請先閲讀背面之注意事項再填寫本頁) 車父為凸出之數個凸部（第二區）具有一為約2〜1〇 pm之 尺寸。該等凸部可具有多種形狀，諸如橢圓形、上弦月或 下弦月形、凹鏡截面形、執跡形或半執跡形等。 此外，雖未顯示於圖式中，可另在光敏絕緣膜48〇之各 個凸部内形成一彈坑形溝槽，俾以進一步增進被形成於光 敏絕緣膜480上之反射電極435的反射性。 如前所述，依據本發明之LCD的反射電極結構中，包 圍供做為像素内微型鏡片之第二區的第一區具有均等之深 度，從而增進反射效率。 依據用以形成具有不均勻表面之光敏絕緣膜的方法， 無論位在光敏絕緣膜下方的金屬圖案存在與否，凹部或溝 槽均具有相同之深度，且其上所形成之反射電極在整個表 面上具有相同寬度與深度的凹部，從而均等地增進顯示區 域之整個表面的反射效率。因此，當本發明之方法施用在 具有不均勻表面的反射電極時，可顯著地增進圖像之反差 與品質。· 此外，因為反射電極係利用改良之曝光與顯影方法來 形成，故可顯著地降低製造時間與成本。 再者，當於形成反射電極前形成光敏絕緣膜時，溝槽 係以相同於像素區内之方式而被形成在像素區外之區域。 因此，像素區内以及像素區外之區域不會形成高度差，從 而排除因向度差造成漏光或液晶分子方向之扭曲現象而導 本紙張尺度適用中國國家標準（CNS) A4規格（210 X 297公釐） 25 1303002This paper scale applies to Chinese national standards (〇β;) A4 specifications (210X297 public D (please read the back note first and then fill out this page). Order - line! 17 1303002 A7 B7 V. Inventions (15) 386 surrounded by The outline of the convex portion 382. The convex portion 382 is positioned higher than the concave portions 384 and 386. (Please read the back note first and then fill in the page.) Specific Example 3 FIG. 7 is a third specific example according to the present invention. A plan view of a reflective LCD having reflective electrodes having convex and concave portions, and FIG. 8 is a cross-sectional view taken along line A-A' of Fig. 7. Referring to Figures 7 and 8, a reflective LCD 400 The first substrate 410 includes a pixel formed on the first substrate 410, a second substrate 420 facing the first substrate 410, a liquid crystal layer 430 interposed between the first substrate 410 and the second substrate 420, and a reflective electrode. 435, the reflective electrode 435 is a pixel electrode formed between the first substrate 410 and the liquid crystal layer 430. The first substrate 410 includes a first insulating substrate 440 and a TFT (thin film transistor) 445, and the TFT 445 is formed. Switching device for the first insulating substrate 440. First insulation The plate 440 is formed of a non-conductive material such as glass or ceramic. The TFT 445 includes a gate 450 separated from the gate line 450a, a gate insulating film 455, a semiconductor layer 460, a resistive contact layer 465, and a The source electrode 470 and the drain electrode 475. Further, a storage electrode line 450c parallel to the gate line 450a is formed under the drain 475 and the first insulating substrate 440. The storage electrode 450b is formed under the drain 475. The gate 450 is branched from the gate line 450a on the first insulating substrate 440. Here, the gate 450 has a two-layer structure in which the lower layer is made of Cr and the upper layer is made of A1. The gate insulating film 455 composed of tantalum nitride (SixNy) is stacked on the first paper scale. It is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). 18 1303002 A7 B7 5. Inventive Note (16) (Read first Precautions on the back side. Fill in the entire surface of the insulating substrate 440. The gate 450, the storage electrode 450b, and the storage electrode line 450c are formed on the first insulating substrate 440. Next, the amorphous germanium semiconductor layer 460 and n+ Resistive contact formed by amorphous bismuth 465 is formed on the gate insulating film 455, and a gate 450 is disposed under the gate insulating film 455. The gate 450 is centered, and a source 470 and a drain are formed on the resistive contact layer 465 and the gate insulating film 455, respectively. 475. The source 470 and the drain 475 are respectively formed of a metal such as Ta, Mo, Ti, Cr, etc. The photosensitive insulating film 480 is stacked on the first insulating substrate 440, and the TFT 445 is formed on the first insulating substrate 440. . A plurality of first regions (recesses) and a second region (protrusions or bumps) having a higher difference are formed in the pixel region (Pin) of the photosensitive insulating film 480 to scatter light. Optionally, the first and second regions formed in the pixel region (Pin) may be extended to an out-of-pixel region (Pout) located between the pixel regions. A contact hole 485 is formed in the photosensitive insulating film 480 to expose a portion of the drain 475 of the TFT 445. On the inner surface of the contact hole 485 and the photosensitive insulating film 480, a reflective electrode 435 is formed. The reflective electrode 435 is connected to the drain 475 via the contact hole 485 such that the TFT 445 is electrically connected to the reflective electrode 435. The first alignment film 500 is stacked on the reflective electrode 435. The second substrate 420 facing the first substrate 410 includes a second insulating substrate 505, a color filter 510, a common electrode 515, a second alignment film 520, a phase difference plate 525, and a polarizing plate 530. The second insulating substrate 505 is made of the same glass standard as the first insulating substrate 440. The Chinese National Standard (CNS) A4 specification (210×297 mm) 19 1303002 A7 B7 5. The invention description (17) or ceramics are formed. . Next, a phase difference plate 525 and a polarizing plate 530 are formed on the second insulating substrate 505. The color filter 510 is disposed under the second insulating substrate 505. A common electrode 515 and a second alignment film 520 are formed under the color filter 510 to form a second substrate 420. The second alignment film 520 and the first alignment film 500 together bias the liquid crystal molecules of the liquid crystal layer 430 in advance at a desired angle. A plurality of spacers 535, 536 are interposed between the first substrate 410 and the second substrate 420 to form a desired space between the first substrate 410 and the second substrate 420. The liquid crystal layer 430 is introduced into a space between the first and second substrates 410, 420, thereby forming a reflective LCD 400 applicable to the specific example. FIGS. 9A to 9C are diagrams showing a manufacturing A cross-sectional view of the method of the LCD of Figures 7 and 8. In the figures 9A to 9C, the same elements in the seventh and eighth figures are denoted by the same element number. Referring to Figures 7, 8, and 9A, first, a metal material such as Ta, Ti, Mo, A, Cp Cu or W is deposited on the upper portion of the first insulating substrate 440 made of an insulating material such as glass or ceramic. . Subsequently, the deposited metal is patterned, thereby forming a gate line 450a, a gate 450 branched from the gate line 450a, and an electrode line 450c including the storage electrode 450b. At this time, the gate 450 and the gate line 450a may be formed of an alloy composed of Al-Cu or an alloy composed of Al-Si-Cu. Subsequently, tantalum nitride is deposited on the entire surface of the first insulating substrate 440 including the gate 450 by a plasma chemical vapor deposition method to form the paper size for the Chinese National Standard (CNS) A4 specification ( 210X297 mm) (Please read the notes on the back and fill out this page.) Order one-line 丨20 1303002 A7 _B7 ___ 1 ο V. Description of invention ( ) Gate insulating film 455. An amorphous tantalum film and an in-situ doped n + -type amorphous tantalum film are formed on the gate insulating film 45 5 by a plasma chemical vapor deposition method. Next, the stacked amorphous germanium film and the n+ type amorphous germanium film are patterned, whereby a semiconductor layer 460 and a resistive contact layer 465 are formed on a portion of the gate insulating film 455, and the gate 450 is located below . Next, on the first insulating substrate 440 on which the resultant structure is formed, a metal layer made of a metal material such as Ta, Ti, Mo, Al, Cr, Cu or W is formed. Subsequently, the stacked metal layers are patterned to form a source line (not shown) orthogonal to the gate line 450a, a source 470 branched from the source line, and a drain 475. Thereby, the TFT 445 including the gate 450, the conductor layer 460, the resistance contact layer 465, the source 470, and the drain 475 are completed. At this time, the gate insulating film 455 is embedded between the gate line and the source line to prevent the gate line from coming into contact with the source line. On the first insulating substrate 440 on which the TFT 445 is formed, the photosensitive insulating film 480 is formed by a spin coating method to a thickness of about 1 to 3 μm, thereby completing the first substrate 410. At this time, a photosensitive organic insulating film or a photosensitive inorganic insulating film can be used as the photosensitive insulating film. In this specific example, an acrylic resin containing a photoactive compound (PAC) can be used as the photosensitive organic insulating film. Referring to Fig. 9, in order to form the contact hole 485, a pair of first masks (not shown) exposed to portions of the contact holes 485 are exposed on the photosensitive insulating film 480, followed by a first exposure process. A second mask 610 exposing a portion corresponding to the recess is provided thereon, followed by a second exposure process. This paper size is applicable to China National Standard (CNS) Α4 specification (210X297 mm) (please read the note on the back and fill out this page) | 丨,τ. 『线丨21 1303002 A7 ___ _B7 1Q ----- - V. Description of the Invention () Thereafter, a developing process is performed to form a contact hole 485 for partially exposing the electrodeless electrode 475 and a plurality of concave portions in the photosensitive insulating film 48A. A method for forming the contact hole 485 in the photosensitive insulating film 480 and a method for forming a plurality of recesses in the photosensitive insulating film 48 are described in detail later. First, in order to form the contact hole 485, a first mask having a pattern corresponding to the contact hole 485 is disposed on the photosensitive insulating film 480. Next, a portion of the photosensitive insulating film 480 corresponding to the source/drain electrodes 470, 475 is first exposed by a full exposure process in which the exposure process is performed by the amount of light for which the photosensitive insulating film 480 is completely exposed. Subsequently, in order to form a plurality of recesses or grooves 481, a second mask 61 for forming a microlens and corresponding to the pattern of the recesses or grooves is provided on the photosensitive insulating film 480. The second mask 610 may have a pattern having a shape opposite to that of the pattern shown, depending on the type of photoresist used. Further, by the lens exposure process (wherein the exposure process is performed with an amount of light suitable for forming a bump), and using the second mask 610, the photosensitive insulating film 48A other than the portion corresponding to the contact hole 485 is exposed. . Next, a developing process is performed to form a contact hole 暴露μ exposing the source/drain electrodes 47, 4 in the photosensitive insulating film 480 as shown in Fig. 9B. Further, a plurality of irregular recesses (not shown) are also formed on the surface of the photosensitive insulating film 480. In order to make the surface structure of the unevenness formed on the surface of the photosensitive insulating film 48〇 have equal rims (ie, convex portions and concave portions), the same as the specific example, the paper size is suitable for the family (10)) (please First read the back of the precautions and fill the nest page), can | 丨 22 曰曰 1303002 five, invention description (2 () 2 way, so there is a metal pattern through the bottom (ie source / bungee 470, 475, gate The second light amount of the second portion of the pole 450 or the storage electrode line 45〇b) is lower than the first light amount in the first portion through which the metal pattern is not provided. For this purpose, as shown in FIG. 9B, The light shielding patterns 612, 614 including the light-transmitting regions 605, 615 for penetrating the incident light and the light-shielding patterns 612, 614 for reflecting the light are located in the corresponding metal patterns 450, 450b, 470. The space d2 between the light-shielding patterns 614 of the second portion of the upper portion of 475 is shaded at a desired ratio and less than the light corresponding to the upper portion of the first portion of the metal pattern 450, 450b, 470, 475 which is not disposed below. a space dl between the patterns 612. The ratio can be in accordance with the metal pattern 45 Preferably, the ratio is about 1/2. Optionally, the amount of light of the second portion may be different from the amount of light of the first portion, and this is compared with Figure 9B. The method is different. In other words, the space d2 between the light-shielding patterns 614 located in the second portion is the same as the space dl between the light-shielding patterns 012 of the first portion, and a halftone mask on which another half of the transparent film is formed is used. '俾 is to lower the incident light incident on the surface of the second portion of the light-transmitting region 615. Then, the subsequent exposure process and development process are performed in the same manner as the foregoing. See Figure 9C, as before As described above, a highly reflective metal material such as A, Ni, Cr or Ag is deposited on the photosensitive insulating film 480 having a plurality of recesses. Subsequently, the deposited metal is patterned into a desired configuration. The crucible is formed into a reflective electrode 435. Next, a photoresist is coated on the upper portion of the reflective electrode 435 and polished, thereby forming a Chinese National Standard (CNS) A4 specification (210×297 mm) for the liquid paper scale. (please first Read the back of the precautions and fill out this page. ) - 23 1303002 A7 ____B7 τΐ ' " ------ - V, invention description () The first alignment of the layer 430 liquid crystal molecules pre-biased at the desired angle The reflective electrode 435 has the same surface profile as the surface of the photosensitive insulating film 480. (Please read the back side of the precautions and fill the page.) The reflective electrode 43 5 can be divided into a plurality of photosensitive insulating films 480. The first region 490 of the recess on the recess 481 and the second region 495 including the plurality of projections as the lens region. At this time, the first region 490 including the continuous grooves (recesses) is lower than the second region 495 including the plurality of convex portions. Moreover, because the first region 490 surrounds the second region 495, the reflective electrode 435 has a structure in which the second region 495 is defined by the first region 490 comprising continuous trenches. Figure 10 is a plan view showing a reflective electrode wheel according to the second and third specific examples of the present invention. Referring to FIG. 10, the shape of the plurality of trenches 490 and the protrusions 495 for forming the reflective electrode 435 is determined according to the mask pattern for patterning the photosensitive insulating film disposed under the reflective electrode 435. . That is, the second figure shows the pattern configuration of the reflective electrode 435, and at this time, the configuration of the photosensitive insulating film positioned under the reflective electrode 435 or the reticle pattern for patterning the photosensitive insulating film is displayed. In other words, the mask shown in Fig. 9 also has a light shielding pattern corresponding to the plurality of convex portions 495 as shown in Fig. 1 and a light transmitting region corresponding to the plurality of grooves 490. When the reflective electrode of the specific example of the present invention shown in FIG. 10 is compared with the conventional reflective electrode shown in FIG. 4, the reflective electrode 43 5 according to the specific example of the present invention has a groove of equal depth regardless of the presence or absence of the metal pattern below. Slots and projections. -------------------- This paper scale is suitable for household wealth (CNS) Α 4 specifications (210X297 mm) " - 24 1303002 A7 V. Invention description (22 The plurality of grooves (first region) which are relatively depressed have a width of about 丨 5 5 μηη. The continuous grooves are arranged to have a constant width in the lateral direction. (Please read the precautions on the back and then fill out this page.) The number of convex parts (second area) that the father has protruded has a size of about 2~1〇 pm. The projections can have a variety of shapes, such as an elliptical shape, a chord month or a lower chord shape, a concave mirror cross-sectional shape, a scissor shape or a semi-deformed shape, and the like. Further, although not shown in the drawings, a crater-shaped groove may be formed in each of the convex portions of the photosensitive insulating film 48 to further enhance the reflectivity of the reflective electrode 435 formed on the photosensitive insulating film 480. As described above, in the reflective electrode structure of the LCD according to the present invention, the first region surrounding the second region serving as the microlens in the pixel has an equal depth, thereby improving the reflection efficiency. According to the method for forming a photosensitive insulating film having a non-uniform surface, the recess or the groove has the same depth regardless of the presence or absence of the metal pattern under the photosensitive insulating film, and the reflective electrode formed thereon is on the entire surface The recesses having the same width and depth thereon uniformly increase the reflection efficiency of the entire surface of the display area. Therefore, when the method of the present invention is applied to a reflective electrode having an uneven surface, the contrast and quality of the image can be remarkably enhanced. In addition, since the reflective electrode is formed by an improved exposure and development method, manufacturing time and cost can be remarkably reduced. Further, when the photosensitive insulating film is formed before the formation of the reflective electrode, the trench is formed in a region outside the pixel region in the same manner as in the pixel region. Therefore, the height difference is not formed in the pixel area and the area outside the pixel area, thereby eliminating the light leakage caused by the difference in the direction of the direction or the distortion of the liquid crystal molecules. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). PCT) 25 1303002

五、發明説明（23 致殘像。將隔件分開後，第二及第二基板之間即形成有均 等之間隙。 雖然反射電極係參照反射式LCD來闡述，但該反射電 極亦可被應用於反射穿透複合式LCD以及其他電子顯示裝 置中。在此例中，整個顯示區的反射性係獲得平均的改善。 雖然本發明已被詳述，但應明瞭本發明的各種變化、 取代與置換係可在不偏離本發明之精神與後述申請專利範 圍所界定之範嗜内完成。 元件編號斜ah 10…第一基板 20…液晶層 22…染料 30…第一絕緣基板 4 0…源極匯流排佈線 50···反射電極 60…汲極 70,71···凹部 80…半導體層 85,90·.·接觸層 100···光阻膜 105…透光區 112…光遮蔽圖案 117··.凹部 15…第二基板 21…液晶材料 2 5…間極匯流排佈線 3 5…間極 4 5…源極 55…TFT裝置、圖案 65···接觸孔 7 5…閘極絕緣膜 83^··光線 95…有機絕緣膜 110···光罩 106…光屏蔽 115.··凸塊 120···第一配向膜 (請先閱讀背面之注意事項再填窝本頁} ί裝丨 ·、=& - 26 1303002 A7 B7 24 五、發明説明（ ） 125…彩色濾光片 135…第二配向膜 d2，dl···空間 210,212…光遮蔽圖案 250,350…金屬圖案 282,382…凸塊、凸部 310.. .光罩 400··.反射式LCD 420···第二基板420 440.··第一絕緣基板 450.. .閘極 450b...貯存電極 455…閘極絕緣膜 465.. .電阻接觸層 475.. .汲極 481…凹部或溝槽 490···第一區、溝槽 Pin…像素區 500…第一配向膜 510…彩色濾光片 520…第二配向膜 530.. .偏光板 610···第二光罩 605,615…透光區 130.. .共同電極 140··.第二絕緣基板 205,215.··透光區 240…基板 280,380…光敏絕緣膜 284,286,384,386."凹部 335,435···反射電極 410…第一基板 430…液晶層 445.. .TFT(薄膜電晶體） 450a…閘極線 450c...貯存電極線 460…半導體層 470.. .源極 480.. .光敏絕緣膜 485.. .接觸孔 495.. .第二區、凸部 Pout…像素外區 505.. .第二絕緣基板 515.. .共用電極 525…相差板 535,536…隔件 612,614…光遮蔽圖案 (請先閲讀背面之注意事項再填窝本頁) 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 275. Description of the invention (23 disabling image. After separating the spacers, an equal gap is formed between the second and second substrates. Although the reflective electrode is described with reference to a reflective LCD, the reflective electrode can also be applied. In reflection-transparent composite LCDs and other electronic display devices. In this case, the reflectivity of the entire display area is improved on average. Although the invention has been described in detail, it should be understood that various changes, substitutions and The replacement system can be completed without departing from the spirit of the invention and the scope defined by the scope of the following patent application. Element number oblique ah 10...first substrate 20...liquid crystal layer 22...dye 30...first insulating substrate 4 0...source Bus bar wiring 50···reflector electrode 60...think pole 70,71···recessed portion 80...semiconductor layer 85,90·.contact layer 100··· photoresist film 105...transmissive region 112...light shielding pattern 117 · recessed portion 15...second substrate 21...liquid crystal material 2 5...inter-electrode bus bar wiring 3 5...interpole 4 5...source 55...TFT device, pattern 65···contact hole 7 5...gate insulating film 83^··Light 95...organic insulating film 110···mask 106 Light Shield 115.··Bump 120···First Alignment Film (Please read the back of the precautions and refill the page) ί装··,=& - 26 1303002 A7 B7 24 V. Description of invention ( ) 125... color filter 135... second alignment film d2, dl··· space 210, 212... light shielding pattern 250, 350... metal pattern 282, 382... bump, convex portion 310.. reticle 400··. reflective LCD 420· · Second substrate 420 440. · First insulating substrate 450.. Gate 450b... Storage electrode 455... Gate insulating film 465.. Resistance contact layer 475.. Bungee 481... Concave or groove The groove 490···the first region, the groove Pin...the pixel region 500...the first alignment film 510...the color filter 520...the second alignment film 530..the polarizing plate 610···the second mask 605,615... Light area 130.. Common electrode 140··. Second insulating substrate 205, 215.··Transmissive area 240... Substrate 280, 380... Photosensitive insulating film 284, 286, 384, 386. " Recessed part 335, 435 · · Reflective electrode 410... First substrate 430... Liquid crystal Layer 445.. TFT (thin film transistor) 450a... gate line 450c... storage electrode line 460... semiconductor layer 470.. source 480.. Film 485.. contact hole 495.. second region, convex portion Pout... pixel outer region 505.. second insulating substrate 515.. common electrode 525... phase difference plate 535, 536... spacer 612, 614... light shielding pattern ( Please read the notes on the back and fill in this page.) This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 27

Claims (1)

1303002 A3 BS CS D8 更)正本 申請專利範圍1303002 A3 BS CS D8 more) original patent application scope 第090121161號專射請”請專利範圍修正本 1. 2. 3. 4. 經濟部智慧財產局員工消費合作社印製 5. 97年3月 一種用於形成光敏絕緣膜时法，該光敏絕緣膜有— 具有數個凸部與凹部之表面，該方法包含： 在-基板上形成光敏絕緣膜，在該基板上形成有具 有反射性質的反射圖案； 將該光敏絕緣膜暴露於光線下；以及 將經曝光之光敏絕緣膜予以顯影，· 其中在對應於反㈣案上部n㈣進行掃描 的第-光量係小於在對應於該反射圖案以外部分之第田 二圖案間進行掃描的第二光量。 如申請專利範圍第1項之方法，*中該反射圖案包含 Α1 或 Cr 〇 如申請專利範圍第1 f、土 β ^ 固罘項之方法，其中該光敏絕緣膜包含 —光敏無機絕緣m —光敏有機絕緣膜。 如申請專利範圍第W之方法，其中該曝光步驟係藉由 利用光罩來進彳了，位在對應於該光敏絕緣膜之第一 圖案的光罩之第一光罩圖案間的第一空間具有一狹縫 、、口構第一空間係小於位在對應於該光敏絕緣膜 之第二圖案的光罩之第二光罩圖案間的第二空間。 如申請專利範圍第Μ之方法，其中該曝光步驟係藉由 利用-光罩來進行，該光罩為具有一半透明薄膜的半 調气罩4光罩係形成在對應於該光敏絕緣膜、之第 3888 ABCD 1303002 圍利 專請 申 \六 經濟部智慧財產局員工消費合作社印製 一圖案的光罩之第一光罩圖案間，俾以降低光穿透量。 6· 一種用於形成反射電極的方法，該方法包含： 在基板上形成光敏絕緣膜，在該基板上形成有具 有反射性質的反射圖案； 將該光敏絕緣膜暴露於光線下.； 將經曝光之光敏絕緣膜予以顯影，以形成一具有數 個凸部與凹部的表面；以及 形成具有一不均勻表面之反射電極，該表面係對應 於位在光敏絕緣膜上之光敏絕緣膜表面； 其中在對應於反射圖#上部之第一圖案間進行掃描 的第光1係小於在對應於該反射圖案以外部分之第 一圖案間進行掃描的第二光量，致使該第一圖案凹部 的深度與該第二圖案凹部的深度實質上相同。 Ί·如申請專利範圍第6項之方法，其中該反射圖案為一薄 膜電曰曰體之源極或沒極，抑或是包含該源極與汲極此 二者。 8·如申清專利範圍第7項之方法，其中該反射圖案更包含 一貝τ存電極。 士申吻專利範圍第6項之方法，其中該曝光步驟係藉由 利用-光罩來進行，位在對應於該光敏絕緣膜之第一 圖案的光罩之第-光罩圖案間的第-空間具有一狹縫 、&quot;構且&quot;亥第一空間係小於位在對應於該光敏絕緣膜 之第弋圖案的光罩之第二光罩圖案間的第二空間'。 家標準 -29 m % 請先閱讀背面之注意事 --- 寫本頁) 訂： 1303002 A3 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 、申請專利範圍 10·如申清專利祀圍第6項之方法，其中該曝光步驟係藉由 利用、，光罩來進行，該光罩為具有一半透明薄膜的半 色凋光罩，该光罩係形成在對應於該光敏絕緣膜之第 -圖案的光罩之第一光罩圖案間，俾以降低光穿透量。 一種用於製造液晶顯示裝置(LCD)的方法，該方法包 含： 在第一基板上形成光敏絕緣膜，在該基板上形成有 具有反射性質的反射圖案； 將該光敏絕緣膜暴露於光線下； 將經曝光之光敏絕緣膜予以顯影，以形成一具有數 個凸部與凹部的表面；以及 在該光敏絕緣膜上形成反射電極； 形成第二基板，其係面對該第一基板並具有一透明 電極；以及 在該第一及第二基板之間形成一液晶層； 其中在對應於反射圖案上部之第一圖案間進行掃描 的第一光量係小於在對應於該反射圖案以外部分之第 二圖案間進行掃描的第二光量。 如申請專利範圍第Π項之方法，其中該曝光步驟係藉 由利用一光罩來進行，位在對應於該光敏絕緣膜之第 一圖案的光罩之第一光罩圖案間的第一空間具有一狹 縫結構，且該第一空間係小於位在對應於該光敏絕緣 膜之，二圖案的光罩之第二光罩圖案間的第二空間。 11. 12. • 國國家標準（CNS)A4規格（210 X 297公釐） 30- ---— II--- I------- * , (請先閱讀背面之注意事寫本頁) . 1303002 A3 8S C8 D8 申請專利範圍 經濟部智慧財產局員工消費合作社印製 13·如申5月專利範圍第11項之方法，其中該曝光步驟係藉 由利用-光罩來進行，該光罩為具有一半透明薄膜的 半色调光罩’該光罩係形成在對應於該光敏絕緣膜之 第圖案的光罩之第一光罩圖案間，俾以降低光穿透 量。 14·如申叫專利範圍第丨丨項之方法，其中該反射電極之表 面包含有第一區與第二區，該第一區具有一較該第二 區為低的溝槽結構，而該第二區具有一較該第一區為 南的凸起構形。 15·如申請專利範圍第14項之方法，彡中該等第一區係以 一封閉曲形而部分地與像素之邊界線共同界定出該等 第二區。 16·如申請專利範圍第14項之方法，其中該等第二區具有 二或更多種選自於由橢圓形、上弦月形、下弦月形、 凹鏡形、執跡形、半執跡形與長凹鏡形所構成的群組 中之形狀。 17·如申請專利範圍第14項之方法，其中該第—區具有— 為1〜5μηι之寬度’以及該第二區具有一為2〜ι〇 之 尺寸。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事'?^^ jc寫本頁) ASpecial Notice No. 090121161 Please request the revision of the scope of patents 1. 2. 3. 4. Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives 5. In March 1997, a method for forming a photosensitive insulating film, the photosensitive insulating film a surface having a plurality of protrusions and recesses, the method comprising: forming a photosensitive insulating film on the substrate, forming a reflective pattern having reflective properties on the substrate; exposing the photosensitive insulating film to light; and The exposed photosensitive insulating film is developed, wherein the first light amount scanned in the upper n (four) corresponding to the inverse (four) case is smaller than the second light amount scanned between the second two patterns corresponding to the portion other than the reflective pattern. The method of claim 1, wherein the reflective pattern comprises Α1 or Cr, such as the method of claim 1 f, the soil β ^ solid term, wherein the photosensitive insulating film comprises - photosensitive inorganic insulating m - photosensitive organic insulating The method of claim W, wherein the exposing step is performed by using a photomask, and the photomask corresponding to the first pattern of the photosensitive insulating film is used. The first space between the first mask patterns has a slit, and the first space of the mouth is smaller than the second space between the second mask patterns of the mask corresponding to the second pattern of the photosensitive insulating film. The method of claim </ RTI> wherein the exposing step is performed by using a photomask which is a semi-aligning hood having a semi-transparent film. The reticle is formed corresponding to the photosensitive insulating film. 3888 ABCD 1303002 Dividends the application of the Sixth Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative to print a pattern of the mask between the first mask pattern, to reduce the amount of light penetration. The method comprises: forming a photosensitive insulating film on the substrate, forming a reflective pattern having reflective properties on the substrate; exposing the photosensitive insulating film to light; developing the exposed photosensitive insulating film to Forming a surface having a plurality of convex portions and concave portions; and forming a reflective electrode having a non-uniform surface corresponding to a surface of the photosensitive insulating film on the photosensitive insulating film; The first light 1 scanned between the first patterns corresponding to the upper portion of the reflection pattern # is smaller than the second light amount scanned between the first patterns corresponding to the portions other than the reflection pattern, such that the depth of the first pattern concave portion is different from the first The method of claim 2, wherein the reflective pattern is a source or a pole of a thin film electrical body, or includes the source and the drain 8. The method of claim 7, wherein the reflective pattern further comprises a beta-electrode storage electrode. The method of the sixth aspect of the patent application, wherein the exposure step is by using a reticle Performing, the first space between the first mask patterns of the photomask corresponding to the first pattern of the photosensitive insulating film has a slit, and the first space is smaller than the position corresponding to the a second space ' between the second mask patterns of the photomask of the second pattern of the photosensitive insulating film. Home Standard -29 m % Please read the note on the back--- Write this page) Order: 1303002 A3 B8 C8 D8 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative print, apply for patent scope 10·If Shen Qing patent 祀The method of claim 6, wherein the exposing step is performed by using a reticle, wherein the reticle is a half-color varnish having a semi-transparent film, and the reticle is formed on the first portion corresponding to the photosensitive insulating film - Between the first mask patterns of the patterned mask, the amount of light penetration is reduced. A method for manufacturing a liquid crystal display device (LCD), the method comprising: forming a photosensitive insulating film on a first substrate, and forming a reflective pattern having reflective properties on the substrate; exposing the photosensitive insulating film to light; Developing the exposed photosensitive insulating film to form a surface having a plurality of convex portions and concave portions; and forming a reflective electrode on the photosensitive insulating film; forming a second substrate facing the first substrate and having a a transparent electrode; and forming a liquid crystal layer between the first and second substrates; wherein the first amount of light scanned between the first patterns corresponding to the upper portion of the reflective pattern is smaller than the second portion corresponding to the portion other than the reflective pattern The second amount of light scanned between the patterns. The method of claim 2, wherein the exposing step is performed by using a photomask, the first space between the first mask patterns of the photomask corresponding to the first pattern of the photosensitive insulating film And having a slit structure, and the first space is smaller than a second space between the second mask patterns of the photomask corresponding to the photosensitive insulating film. 11. 12. • National Standard (CNS) A4 Specification (210 X 297 mm) 30- ---- II--- I------- * , (Please read the note on the back first) Page) 1303002 A3 8S C8 D8 Patent Application Scope of the Ministry of Economic Affairs Intellectual Property Office Employees Consumption Cooperative Printed 13 · The method of claim 11 of the patent scope of May 5, wherein the exposure step is performed by using a photomask The reticle is a halftone reticle having a semi-transparent film formed between the first reticle pattern of the reticle corresponding to the first pattern of the photosensitive insulating film to reduce the amount of light penetration. The method of claim 2, wherein the surface of the reflective electrode comprises a first region and a second region, the first region having a trench structure lower than the second region, and the The second zone has a raised configuration that is souther than the first zone. 15. The method of claim 14, wherein the first zone defines the second zone in a closed curve and partially in conjunction with a boundary line of pixels. The method of claim 14, wherein the second region has two or more selected from the group consisting of an ellipse, a top chord, a lower chord, a concave mirror, an obstructed shape, and a semi-obstructed shape. The shape of the group formed by the long concave mirror shape. 17. The method of claim 14, wherein the first zone has a width of from 1 to 5 μm and the second zone has a dimension of from 2 to 〇. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 public). (Please read the note on the back first??^^ jc write this page) A