1301290 九、發明說明： 【發明所屬之技術領域】 本發明係有關於半導體元件之製造領域，特默有關於一種可 以有效率且均自骑航學氣她獅㈣咖㈣⑽， CVD)設備的反應器内部的方法。 【先前技術】 化學氣相沈積製程在半導體製程中扮演十分關鍵且吃重的角 色，其主要是絲在轉體晶_表社沈積各_材料薄膜， ^J^n_^>fb^(silicon dioxide) ^ t,>fb^(silicon nitride)#^ 料薄膜有可顧來作為積體電路的絕緣介電層或者保護層等。如 ，習該項技藝者所知，在沈積薄膜的過財，化學氣相沈積反應 裔的内壁上亦同時會逐漸累積或附著—些污染物f，這是主要是 由於沈積反應氣體除了在晶圓表面上沈積以外，亦同時會在反應 器的内壁上沈積與沈積在晶圓表面上相同的薄膜所致。 舉例來說，高密度電漿化學氣相沈積(high-densityplasma chemical vapor deposition，HDpcvD)設備已被普遍應用在 〇 25 微 米以下的轉體先進製程，贿在晶圓上沈積二氧切薄膜。而 薄膜製程中產生的二氧化矽會逐漸累積附著在化學氣相沈積反應 裔的内壁，若不去定期的清潔反應器的内部，則累積附著在反應 器的内壁上的薄膜可能會剝落，若掉落在生產中的晶圓表面，會 造成半導體元件製程中的缺陷，因此這類附著在反應器的内壁上 1301290 的薄膜通常被視為潛在的污染顆粒來源，影響產品的良率甚鉅功 而隨著機台使用時間以及沈積次數的增加，在同一化學氣相沈 積反應器中生產的晶圓良率可能會隨之下降，最終的結果可能是 必須停止該半導體生產線製程，以進行化學氣相沈積反應器的圓 頂罩(dome)的汰舊換新，如此一來，更造成半導體製造成本的增加。 因此，為求後續生產過程的潔淨度，每台高密度電漿化學氣相 沈積设備機台在生產或處理過一定數量的晶圓後，都需要再利用 含氟氣體，例如氟氣(fluorine)、三氟化氮(nitr〇gentri_fluoride NF3) 氣體或者六氟乙烧氣體(hexafluoroethane，CJ6)，來定期進行線上 同步的反應器内部清洗，藉以去除附著在化學氣相沈積反應器的 内壁上的沈積物質或殘存⑽化物質。然而；由於清潔氣體的使 用量通常不低，故如何有效率的清潔反應器内部並且延長每一次 鲁清潔的週期，同時又能夠使氣體的使用量降低或最小化，兼顧生 ^ 產效率與成本之間的平衡，亦必須做進一步的整體考量。 在相關的先前技術中，其中美國專利第6584987號披露了一種 可改善1%密度電漿化學氣相沈積設備清潔的方法，宣稱可以同時 減少二氟化氣清潔氣體的使用量(METHOD TOR IMPROVED CLEANING IN HDPCVD PROCESS WITH REDUCED NF3 USAGE) Ji述專利巾所揭露的方法係在進行通常或標準的三氣化 氮清潔步驟之前，需先經過使反應ϋ⑽升溫的「烘烤(baking)」 1301290 階段，包括在待清潔的反應器中通入氬氣(擎)以及全氣烴 (perflu—atedhyd聰rb⑽氣體，然後’提供即功率以產生電聚， 接著需再通人魏(Gxygen);並轉此賴，_反應關部的溫 度提高；在使反應H内部於此電漿條件下烘烤—預定時間後，才 將RF功率關掉，停止電漿的產生；最後，還要先將反應器内部的 氣體以真空泵浦抽出，始可在待清潔的反應器中通人三氟化氮清 潔氣體，進行後續標準的三氟化氮清潔步驟。 上述技術的主要故點在於其清潔過程中需使用到額外的氣 ^^H^4a(argon) > ^aM(perfluorinated hyd^ 氧氣等，造成系統的複雜化，因此需要額外的處理時間。此外， 在完成其所「㈣」步雛，以及在進行鮮的三氟化氮清 潔步驟之前，ϋ需要先將反應器内部的氣體以真线浦抽出，始 可在待π潔的反應n中通人三氟化氮清潔氣體，如此—來，導致 整體清潔步驟的效率降低，而可能影_晶圓產能。 【發明内容】 本發明之主要目的在提供一種改良的化學氣相沈積反應器清 潔系統’同時提供-種反應制部的清潔方法，可以解決上述先 前技術的問題以及缺點。 為達前述目的，本發明之較佳實施例提供一種沈積設備的清潔 方法，首先將一含氟的清潔氣體導入該沈積設備中，使該含氟的 1301290 清潔氣體在該沈積没備中維持在一第一壓力狀態下，提供一处功 率，以點燃該沈積設備t的該含氟的清潔氣體，產生一電漿氣體， 形成該電漿氣體後，使該電漿氣體在該沈積設備中維持一預定時 間’並達到-第-/JDL度狀％，進行該沈積設備的第一階段的内部 清潔，關掉該RF功率，以停止產生該電漿氣體，最後，將一含有 ‘氟自由基的遠端電漿氣體，自-遠端電漿供應設備，導入處於該 "第一溫度下的該沈積設備中，進行第二階段的内部清潔。 鲁 本發明另-較佳實施例提供-種清潔化學氣相沈積機台的方 法，該化學氣相沈積機台包含有一機台底座，其又至少包含有一 晶圓_以及一保護環、—圓頂罩安裝在言亥機台底座上，以形成 一沈積室，該沈積室周圍設置有複數支第—進氣導管，將氣體由 側邊方向通入該沈積室，以及複數支第二進氣導管，指向該圓頂 罩頂部。該方法首先將一含氟的清潔氣體經由該第一進氣導管以 • 及该第二進氣導管導入該沈積室中，使該含氟的清潔氣體在該沈 積室中維持在一第一壓力狀態下，提供一 RF功率，以點燃該沈積 至中的该含氟的清潔氣體，產生一電漿氣體，形成該電漿氣體後， 使該電漿氣體在該沈積室中維持一預定時間，並達到一第一溫 度，進行該沈積設備的第一階段的内部清潔，接著，關掉該处功 率’以停止產生該電漿氣體，最後，在未將沈積室抽真空的情況 下’直接該將一含有氟自由基的遠端電漿氣體，自一遠端電漿供 • 應設備，經由該第一進氣導管導入處於該第一溫度下的該沈積室 一 中，進行第二階段的内部清潔。 8 13〇1290 本發明之主要優點在其可以有效率地、均勻地清潔沈積反應器 的内部’而且清潔過程中都是使用相同的清潔氣體，且反應器的 内部’特別是反應器的圓頂罩的内壁，不會與清潔氣體過度劇烈 的反應’可避免產生明顯的黑化圖紋⑴址ringS)。 為了使貴審查委員能更進一步了解本發明之特徵及技術内 谷，請參閱以下有關本發明之詳細說明與附圖。然而所附圖式僅 供參考與說明用，並非用來對本發明加以限制者。 【實施方式】 如則所述，在化學氣相沈積製程中，沈積氣體分子除了會在晶 圓的表面沈積以外’部分的沈魏體分子亦會擴散至反應器的内 壁(通¥為銘質内壁），並與其接觸或反織，沈積附著在反應器的 内壁上，形成厚度逐漸累積的沈積殘留物。而當此沈積殘留物的 ^度累積至某個程度時，即很有可能自反應器的_祕或者掉 落在處理巾u表面，造成顆粒缺陷或者影響到薄膜沈積品 與均勻度。 此外’這種反應器内壁上的沈積殘留物也有可能會影響到复它 重要的製程控_子，例如，_沈積鱗或韻觀度等等， 而必須加以重視。 為了清除這些反應器内壁上的沈積殘留物，通常是採赛^) 、、、一 1301290 (fluorine)或者三氟化氮(nitrogen tri-fluoride，NF3)氣體等含氟的蝕 刻性氣體，並在電漿條件下進行反應器内壁的清潔。蝕刻性清潔 氣體通常是週期性的在反應器處理過一定數量的晶圓後(或者在生 產完每一片晶圓後)才會使用。清潔過程中，這類在電漿加強及辅 助下的蝕刻性清潔氣體會與反應器内壁上的沈積殘留物發生反 應’產生氣態的反應產物，再由真空泵浦抽出，達到潔淨的效果。 然而’申请人發現習知技藝之清潔方法往往無法均勻的去除所 有附者在反應内部的沈積殘留物。申請人發現，如二氧化碎等 沈積殘留物通常會殘留在化學氣相沈積反應器的圓頂罩((1〇1116)的 較低位置的内壁上，而無法清潔乾淨，而為了完全將這些殘留在 圓頂罩較低位置内壁上的沈積殘留物清潔乾淨或完全去除，就需 拉長清潔反應時間，結果卻造成圓頂罩較頂部位置的内壁被過度 蝕刻或者過度清潔，導致圓頂罩内壁的黑化圖紋(darkrings)。 這些黑化圖紋是由三氟化銘(·3)所構成的，其主要是清潔電 漿氣體(㈣與裸露出來的圓頂罩内壁(MO3)反應產生。這些形成 在圓頂罩内壁的黑化圖紋在後續的化學氣相沈積製程中亦可能是 潛在的顆粒污染來源。 鑑於此，本發明提供—觀改㈣化學氣相沈積反應器清潔系 統’同時提供-種反應n畴的清潔方法，可以—併解決上述先 前技術的問題以及缺點。 1301290 本發明特別是針對可能產生在1301290 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to the field of manufacturing semiconductor devices, and is directed to a reaction that can efficiently and independently ride her lion (four) coffee (four) (10), CVD equipment. The method inside the device. [Prior Art] The chemical vapor deposition process plays a very important and heavy role in the semiconductor manufacturing process. The main reason is that the silk is deposited in the body of the film. ^J^n_^>fb^(silicon dioxide ^ t,>fb^(silicon nitride)#^ The film has an insulating dielectric layer or a protective layer which can be considered as an integrated circuit. For example, as far as the art knows, in the deposition of thin films, the inner wall of the chemical vapor deposition reaction will also gradually accumulate or adhere to some pollutants f, mainly due to the deposition of reaction gases in addition to crystals. In addition to the deposition on the circular surface, the same film deposited on the surface of the wafer is deposited on the inner wall of the reactor. For example, high-density plasma chemical vapor deposition (HDpcvD) equipment has been widely used in the advanced process of 转 25 micrometers or less, and the dioxo film is deposited on the wafer. The cerium oxide produced in the thin film process will gradually accumulate and adhere to the inner wall of the chemical vapor deposition reaction. If the inside of the reactor is not cleaned regularly, the film accumulated on the inner wall of the reactor may peel off. Dropping on the surface of the wafer in production can cause defects in the manufacturing process of the semiconductor device. Therefore, the film of 1301290 attached to the inner wall of the reactor is usually regarded as a potential source of contaminated particles, which affects the yield of the product. With the use of the machine and the increase in the number of depositions, the yield of the wafer produced in the same chemical vapor deposition reactor may decrease. The final result may be that the semiconductor production line must be stopped for chemical gas. The replacement of the dome of the phase deposition reactor has resulted in an increase in semiconductor manufacturing costs. Therefore, in order to improve the cleanliness of the subsequent production process, each high-density plasma chemical vapor deposition equipment machine needs to reuse fluorine-containing gas, such as fluorine gas, after producing or processing a certain number of wafers. ), nitrogen trifluoride (nitr〇gentri_fluoride NF3) gas or hexafluoroethane (CJ6) to periodically clean the inside of the reactor for internal synchronization, thereby removing the adhesion to the inner wall of the chemical vapor deposition reactor. Deposited material or residual (10) material. However, since the amount of cleaning gas used is usually not low, how to efficiently clean the inside of the reactor and extend the cycle of each cleaning cycle, while at the same time reducing or minimizing the amount of gas used, taking into account production efficiency and cost. The balance between the two must also be considered as a further overall consideration. In the related prior art, U.S. Patent No. 6,854,987 discloses a method for improving the cleaning of a 1% density plasma chemical vapor deposition apparatus, claiming that the amount of clean gas used for the difluorination gas can be simultaneously reduced (METHOD TOR IMPROVED CLEANING) IN HDPCVD PROCESS WITH REDUCED NF3 USAGE) The method disclosed in the patented towel is subjected to the "baking" 1301290 stage of the reaction enthalpy (10) before the normal or standard three-nitrogen nitrogen cleaning step. In the reactor to be cleaned, argon gas and full-hydrocarbon (perflu-atedhyd rb (10) gas are introduced, and then 'power is supplied to generate electricity, and then Gxygen is required to pass through; , the temperature of the reaction part is increased; after the reaction H is baked under the plasma condition for a predetermined time, the RF power is turned off, the generation of the plasma is stopped; finally, the inside of the reactor is first The gas is pumped out by vacuum pumping, and the nitrogen trifluoride cleaning gas can be passed through the reactor to be cleaned for subsequent standard nitrogen trifluoride cleaning steps. The main point of the above technology lies in During the cleaning process, additional gas ^^H^4a(argon) > ^aM (perfluorinated hyd^ oxygen) is used to complicate the system, so additional processing time is required. In addition, after completing the "(4)" Stepping, and before carrying out the fresh nitrogen trifluoride cleaning step, the gas inside the reactor needs to be extracted by the real line, and the nitrogen trifluoride cleaning gas can be passed through the reaction n to be cleaned. As a result, the efficiency of the overall cleaning step is lowered, and the wafer throughput is likely to be generated. SUMMARY OF THE INVENTION The main object of the present invention is to provide an improved chemical vapor deposition reactor cleaning system while providing a reaction unit. The cleaning method of the prior art can solve the problems and disadvantages of the prior art. In order to achieve the foregoing object, a preferred embodiment of the present invention provides a cleaning method for a deposition apparatus, first introducing a fluorine-containing cleaning gas into the deposition apparatus, so that The fluorine-containing 1301290 cleaning gas is maintained at a first pressure state in the deposition, providing a power to ignite the fluorine-containing cleaning gas of the deposition apparatus t, Generating a plasma gas, forming the plasma gas, maintaining the plasma gas in the deposition apparatus for a predetermined time 'and reaching ----JDL degree %, performing internal cleaning of the first stage of the deposition apparatus Turning off the RF power to stop generating the plasma gas. Finally, a remote plasma gas containing 'fluorine radicals, the self-distal plasma supply device, is introduced at the first temperature. In the deposition apparatus, the second stage of internal cleaning is performed. Luben Invention Another preferred embodiment provides a method of cleaning a chemical vapor deposition machine, the chemical vapor deposition machine comprising a machine base, which in turn Having at least one wafer _ and a protective ring, the dome cover is mounted on the base of the haihai machine to form a deposition chamber, and a plurality of first-intake conduits are arranged around the deposition chamber to guide the gas from the side direction Access to the deposition chamber, and a plurality of second intake conduits, directed toward the top of the dome. The method first introduces a fluorine-containing cleaning gas into the deposition chamber via the first intake conduit and the second intake conduit to maintain the fluorine-containing cleaning gas at a first pressure in the deposition chamber. a state in which an RF power is supplied to ignite the deposited fluorine-containing cleaning gas to generate a plasma gas, and after the plasma gas is formed, the plasma gas is maintained in the deposition chamber for a predetermined time. And reaching a first temperature, performing internal cleaning of the first stage of the deposition apparatus, then turning off the power at the location to stop generating the plasma gas, and finally, without vacuuming the deposition chamber Passing a far-end plasma gas containing fluorine radicals from a remote plasma supply device through the first intake conduit to the deposition chamber 1 at the first temperature for the second stage Internal cleaning. 8 13〇1290 The main advantage of the invention is that it can clean the interior of the deposition reactor efficiently and uniformly 'and the same cleaning gas is used in the cleaning process, and the inside of the reactor 'especially the dome of the reactor The inner wall of the hood does not react excessively with the cleaning gas' to avoid the appearance of a pronounced blackening pattern (1) ringS). In order to enable the reviewing committee to further understand the features and technical aspects of the present invention, reference is made to the following detailed description of the invention and the accompanying drawings. The drawings are to be considered in all respects as illustrative and not limiting. [Embodiment] As described above, in the chemical vapor deposition process, in addition to depositing gas molecules on the surface of the wafer, a part of the precipitated Wei molecules will also diffuse to the inner wall of the reactor (the inner wall of the inscription). And in contact with or reverse-weaving, the deposit adheres to the inner wall of the reactor to form a deposition residue whose thickness is gradually accumulated. When the degree of deposition of the deposition residue is accumulated to a certain extent, it is likely to fall from the surface of the reactor or fall on the surface of the treatment towel u, causing particle defects or affecting film deposition and uniformity. In addition, the deposition residue on the inner wall of the reactor may also affect the important process control, such as _ deposition scale or azimuth, etc., and must be taken seriously. In order to remove the deposition residue on the inner wall of these reactors, it is usually a fluorine-containing etching gas such as a gas, a 1,312,290 or a nitrogen tri-fluoride (NF3) gas. The inner wall of the reactor was cleaned under plasma conditions. Etching cleaning gases are typically used periodically after the reactor has processed a certain number of wafers (or after each wafer has been produced). During the cleaning process, the etch-off cleaning gas under the reinforcement and assist of the plasma reacts with the deposition residue on the inner wall of the reactor to produce a gaseous reaction product, which is then pumped out by a vacuum pump to achieve a clean effect. However, the Applicant has found that conventional cleaning methods often fail to uniformly remove deposition residues from all of the internal components of the reaction. Applicants have found that deposition residues such as ash ash usually remain on the inner wall of the lower cover of the chemical vapor deposition reactor (1〇1116) and cannot be cleaned, in order to completely The deposition residue remaining on the inner wall of the lower position of the dome is cleaned or completely removed, and the cleaning reaction time is required to be elongated, resulting in over-etching or over-cleaning of the inner wall of the dome at the top position, resulting in a dome cover. Darkenings of the inner wall. These blackening patterns are composed of trifluorochemical (3), which is mainly used to clean the plasma gas ((4) reacts with the exposed dome inner wall (MO3). The blackening pattern formed on the inner wall of the dome may also be a potential source of particulate contamination in the subsequent chemical vapor deposition process. In view of this, the present invention provides a four-dimensional chemical vapor deposition reactor cleaning system. 'Also providing a cleaning method for the reaction of n domains, can - and solve the problems and disadvantages of the prior art described above. 1301290 The present invention is particularly directed to
述的黑化圖紋現象。 二氧化__殘留敏圓鮮内妓全去除， 声的，將 ，而不致於引起上 月 > 閱第1 SJ以及第2圖’其巾第丨圖是根據本發明較佳實施 丨所、、曰示的间讀電漿化學氣相沈積(high_de_ pl_a ehemieal vapor^deposit^ HDPCVD)^ - t (dep〇sition chamber)^#] 視不思圖’第2圖繪示的;^第丨圖沈積室内的氣體管線組態的上 視示意圖。 如第1圖所示，高密度電漿化學氣相沈積機台10大致上包含 有一機台底座12以及一半球型的圓頂罩2〇，其中圓頂罩2〇可以 是由石英或者陶瓷材料所構成，例如，三氧化二鋁(A1203)等材料。 在圓頂罩20的外圍則纏繞有感應線圈(inductioncoils)22 ,用來提 供足夠點燃電漿並在沈積室内維持該電漿所需的RF功率。此外， 感應線圈内亦可以導入冷卻水，而能夠使沈積室迅速冷卻。 如前所述，當圓頂罩20的内壁被過度蝕刻或者過度清潔時， 如NF3等清潔氣體所產生的電漿就會與暴露出來的圓頂罩20内壁 發生反應，進而產生A1F3等污染物質，並引起前述的黑化圖紋現 1301290 機台底座12包含有一晶圓承座14，用來放置一待處理晶圓， 以及一保護環16，靠近並圍繞在晶圓承座14的周圍。晶圓承座 14通常是由陶瓷材料或者經過陽極處理的铭金屬(an〇dized aluminum)所構成，但不限於此。此外，在機台底座12設有一 〇 型橡圈(O-ring) 18，可以使當圓頂罩2〇蓋在機台底座12上時，形 成一氣密狀態的反應室，以方便進行化學氣相沈積製程。 機台底座12另外連接至一氣體供應系統3〇，用來從其氣體供 應端34、35及36提供化學氣相沈積製程所需使用到的反應氣體， 例如矽甲烷(silane，SiH4)及氧氣，或者清潔氣體，例如见^，使這 些氣體分別經由進氣導管110、112、114及116輸送至沈積室中。 如第1圖所示，各氣體供應端34、35及36可與一歧管及控制單 元(manifold and control imit)32相連接，藉此控制輸入沈積室中的 氣體麵錢麵氣體狀沈魅驗過晚轉管雜。為簡 化說明，圖中並未特別繪示出實際的控制管件及其位置，例如控 制閥或者流量控制器等等。 歧管及控财元32糾連接至—遠端電雜應設備(r_te 咖遍驗叫哪抑，用來在進行反應器内部清潔時提供活性氟 自由基給沈積室’朗樣可㈣歧管及控辦元32選擇遠端 電漿注入沈積室所經過的進氣導管路徑。根據本發明，遠端電喂 供應設備4〇係將恥氣體供應端％提供的崦氣體在一外^ 應器内游離成活性氟自由基等活性物種。 1301290 其中，退端電漿供應轶備4〇可以是任何能夠產生電漿之已知 口又備例如但不限於微波放電電漿源㈣⑽w_此血职 source)、感應耦合電漿源(inductively c〇叩led咖脱 P早放電電裝源(silent barriei· diseharge plasma source)或者電容麵合 電漿源(capacitively coupled plasma source)等。 另外’為了能夠在沈積過程中控制並維持反應器内的壓力，並 且將反應器内的氣體抽出，機台底座12可連接至一真空泵浦50。 在晶圓進行沈積處理過程中，舉例來說，當晶圓進行HDpcvD 一氧化矽薄膜的沈積時，半導體晶圓（圖未示)係先被放置在晶圓承 座14上，然後，經控制流量的矽曱塢氣體經由氣體供應端34被 輸送至沈積室中，其路徑係同時經由進氣導管11〇及進氣導管112 >主入沈積室中。另一種反應氣體，氧氣，則是由氣體供應端35經 過進氣導管114注入沈積室中。 如第1圖以及第2圖中所示，在每兩支長度較長的進氣導管11〇 之間’安排有複數支長度較短的進氣導管112及進氣導管114，例 如，五支進氣導管112及進氣導管114在兩支長度較長的進氣導 管110之間。 其中，長度較短的進氣導管112及進氣導管114(以下亦簡稱為 「側管」）係朝一預定方向及角度傾斜且平均地配置在沈積室的周 1301290 ，错此將反應氣體從側邊方向朝沈積室种央位置噴出。長卢 較長的進氣導管_下亦_為「頂管」），縣要是將氣體ς 达至沈積㈣較高處，例如較靠賴鮮Μ卿的地方。 如熟習該項技藝者所知，薄膜的沈積過程中，另需提供足夠的 RF功率至靠近晶_座14的位置，並且控制晶圓表面上的電聚 中的離子能量。在沈積縣後’ HDPCVD二氧化侧時會沈積在 晶圓表面上以及沈積在反應器的内部，包括圓頂罩2()的内壁。此 外’HDPCVD二氧化矽亦會沈積在其它位置，特別是進氣導管ιΐ2 及114的喷嘴處，而此處的沈積殘留物更是難以利用傳統的清潔 程序清除乾淨。 當HDPCVD二氧化石夕薄膜沈積處理程序完成後，接著，半導 體晶圓會從晶圓承座14上移開，然後，即可進行沈積室的清潔程 序，其週期可以是在處理過一定數量的晶圓後，或者在生產完每 一片晶圓後，在線上現場進行。 本發明所提供的清潔程序乃是兩階段清潔程序，其中，第一階 段是以反應速率較快的nf3氣體電漿清洗為主，此階段清洗過程 中，nf3氣體電漿係直接產生在反應器内，又可將此階段稱為「亮 模式(bright mode)」。第二階段則是關掉提供給該反應器的RF功 率，而是另導入反應較溫和的遠端電漿進行剩下的沈積殘留物的 最後清除步驟，由於反應器内並無電漿放電發光，通常以自由基 1301290 型態之物種為主，又可將此階段稱為「暗模式(献mQde)」。由此 可知’本發明之特徵乃是以「亮才莫式」1主，輔以第二階段的「暗 模式」之兩階段清潔程序。 、 根縣發狀較佳實細，在半導體晶®完賴獻積並且移 出反應器之後，隨即將沈積室的殘留反應氣體(flu〇rin_ntaining Φ gas)利用真空果浦50抽除。接著，從氣體供應端36將含氟清潔氣 體，例如’氣體，導入反應室中，並藉由歧管及控制單元32的 控制’使該含氣清潔氣體健是經由頂管11G以及^^導管116(以 下亦稱為「清潔管」），注入反應室中，如第3圖所示。然後，利 用真空泵浦50，使系統維持在適當的壓力下。 根據本發明之另-較佳實補，在半導體晶圓完膜沈積並 且移出反應器之後，隨即將沈積室的殘留反應氣體利用真空泵浦 Φ 50才由除。接著，從氣體供應端36將含氟清潔氣體，例如鹏氣體， '導入反應室中，並藉由歧管及控制單元32的控制，使含氟清潔氣 體同時經由頂管110、清潔管116以及經由側管112或114，注入 反應室中，然後，利用真空泵浦50，使系統維持在適當的壓力下。 由於清潔氣體同時經由側管Π2或114注入，因此，可以提供更 均勻的氣體分佈狀態，進而改善清潔的均勻度，也可以避免圓頂 罩20頂部的過度蝕刻以及圓頂罩2〇下部侧壁的蝕刻不足現象。 1 接著’提供足夠的处功率使通入反應室内的清潔氣體產生電 l3〇129〇 漿，並且使NR氣體分子在高密度電漿環境中解離成具有活性的 鼠自由基以及氣化鼠自由基等。這些在氣體電漿中存在的再有古 度活性的游離物質會轟擊形成在圓頂罩20的内壁上的沈積殘留 物，並且與其反應，猎此方式咼效率地去除這些沈積殘留物，並 快速清潔反應器的内部。根據本發明之較佳實施例，在第一階段 時’沈積室内的溫度需控制在100°C以上，或者在2〇〇°c以上更佳。 根據本發明之較佳實施例，本發明第一階段的「亮模式」係在 相對較高的壓力下進行，例如，3_15托耳，較佳為㈣托^。在 前述的較賴力的清潔條件下，清舰度可雜快，制適合針 對圓頂罩20的頂部、晶圓承座14以及保護環16作高效率的清潔。 然而，本發明第-階段的「亮模式」亦可以在相對較低的壓力; 進仃，例如，0.1-3乾耳，較佳為小於2托耳。在前述的較低壓力 的清潔條件下，清潔速度雖餘雜慢，但是卻較均勻，特別適 _合針對圓頂罩20的下部側壁以及側管112及114作完整且有效的 清潔。 ^匕外，根據本發明之另一較佳實施例，本發明第-階段的「亮 Μ式」亦可以在一低壓兩種不關力棚下切換進行。也就是說， 本發明第-階段的「亮模式」，其現場NF3電漿清洗—開始可以是 在相對較同的壓力下進行一預定時間，然後，才轉換至較低的壓 - 力下完成，反之亦然。 1301290 根據本發明之較佳實施例，第—階段的「亮模式」，其現場nf3 電漿清洗的時間共持續約10-300秒左右，但木限於此，其實際清 潔時間需視沈積殘留物的厚度而定。 請參閱第4圖，其繪示的是本發明第—階段的「亮模式」完成 後仁在進行第二階段「暗模式」之前，殘存在圓頂罩内壁上 的沈積殘留物的輪廓剖面示意圖。在第4圖令，在進行清潔程序 月J原來的一氧化矽膜的厚度以虛線及標號6〇表示其位置及輪 廓。在完成本發明第一階段的「亮模式」後，殘存在靠近圓頂罩 20頂部的二氧化頻62的厚度通常會較在圓頂} 下部的二氧 化石夕膜64的厚度要薄—些。根據本發明，第—階段的「亮模式」 需在圓頂罩20頂部的表面被暴露出來之前即停止，也就是在圓頂 罩20頂部的表面剩下一些二氧化石夕厚度時，形成類似第4圖中的 «]面輪麵’將RP功率麟，並同時停止供應呢清潔氣體。 接下來，開始進行本發明第二階段的「暗模式」，其特徵在不 需要另外將沈積室内的殘餘氣體抽出或者破真空的狀態下直接 將遠端電t供應設備40所產生的含有活性氟自由基的遠端電聚氣 體經由歧管及控制單元32的快速切換而導入沈積室中。其中，遠 ，電漿氣體可以經由側管112或114注入沈積室中，或者經由頂 官⑽及清潔管m注入。根據本發明之較佳實施例，為求最佳 ^清潔效率以及均勻度，並且避免黑化圖紋的產生，建議經由側 官112或114將遠端電漿氣體注入沈積室中。 1301290 在第二階段尹，遠端電漿供應設備40所產生的含有活性氣自 由基的遠端電漿氣體可將在第一階段_尚未去除的剩餘二氧化砍 薄膜自反應器的内部做徹底的清除。由於並未提供RF功率，因 此，第上階段的清潔速率較為和緩(反應器内不會有離子轟擊產 生），但是，也因此可以較均勻的清潔反應器的内部。 ， 此外，由於在第一階段清潔過程中，圓頂罩20的溫度已經被 •提高至_-删。(：左右，因此，在第二階段中，遠端電装供應設備 40所產生的含有活性氟自由基的遠端電漿氣體的清潔也可以很有 效率’可以録的將第-階段中尚未去除_餘二氧财薄膜自 反應器的内部徹底的清除，而不會與暴露出來的圓頂罩2〇内壁發 生劇烈的反應。 根據本發明，本發明第二階段的「暗模式」.同樣可在相對較高 • ^力下進行’例如’ 3·15托耳，較佳為5·Η)托耳。在前述的較 同壓力的錄件下’清潔速度可以較快，特別適合針對圓頂罩 的頂部、晶圓祕14以及保護環16作高效率的清潔。 本發明的「暗模式」亦可以在相對較低的壓力下進行，例如， 〇=托耳，較佳為小於2托耳。在麵的較據力的清絲件下， 月絮速度雖然相對較，但是卻較均勻，特別適合針對圓頂罩 .的下部側壁以及侧管U2及114作完整且有效的清潔。 1301290 本發明的「暗模式」亦可以在高/低麈兩種不同壓力範圍下切換 進行。也就是說，一開始可以是在相對較高的壓力下進行一預定 時間，然後，才轉換至較低的壓力下完成，反之亦然。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍 所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 沈積機台的沈積室之側視示意圖。 第1圖是根據本發明較佳實施例所繪示的高密度錄化學氣相 第2圖_的是第！圖沈__氣辭線組躺上視示意圖。 意圖。 第3圖繪神是本發日脑置在沈積如部的進轉管的上視示 意圖’顯示的是當進行反應器内都沾、The blackening pattern phenomenon described. The oxidized __ residual sensitive round sputum is completely removed, the sound will, and will not cause the last month> read the first SJ and the second figure 'there is a preferred embodiment according to the present invention. And inter-read plasma chemical vapor deposition (high_de_pl_a ehemieal vapor^deposit^ HDPCVD)^ - t (dep〇sition chamber)^#] A top view of the configuration of the gas line in the deposition chamber. As shown in FIG. 1, the high-density plasma chemical vapor deposition machine 10 generally includes a machine base 12 and a dome-shaped dome cover 2, wherein the dome cover 2 may be made of quartz or ceramic material. It is composed of, for example, a material such as aluminum oxide (A1203). Induction coils 22 are wound around the periphery of the dome cover 20 to provide sufficient RF power to ignite the plasma and maintain the plasma within the deposition chamber. In addition, cooling water can be introduced into the induction coil to cool the deposition chamber rapidly. As described above, when the inner wall of the dome cover 20 is over-etched or over-cleaned, the plasma generated by the cleaning gas such as NF3 reacts with the exposed inner wall of the dome cover 20 to generate pollutants such as A1F3. And causing the aforementioned blackening pattern, the 1301290 machine base 12 includes a wafer holder 14 for placing a wafer to be processed, and a guard ring 16 adjacent to and surrounding the wafer holder 14. The wafer holder 14 is usually composed of a ceramic material or an anodized aluminum, but is not limited thereto. In addition, an O-ring 18 is provided on the base 12 of the machine, so that when the dome cover 2 is placed on the base 12 of the machine, an airtight reaction chamber is formed to facilitate the chemistry. Vapor deposition process. The base 12 of the machine is additionally connected to a gas supply system 3〇 for supplying the reaction gases required for the chemical vapor deposition process, such as silane (SiH4) and oxygen, from its gas supply terminals 34, 35 and 36. Or a cleaning gas, for example, such that the gases are delivered to the deposition chamber via intake conduits 110, 112, 114 and 116, respectively. As shown in Fig. 1, each of the gas supply ends 34, 35 and 36 can be connected to a manifold and control unit (32), thereby controlling the gas surface of the input deposition chamber. After the test, the tube was mixed. For the sake of simplicity, the actual control tube and its position are not specifically shown, such as control valves or flow controllers. The manifold and the control unit 32 are connected to the remote electrical hybrid device (r_te, which is used to verify the activity of the fluorine radical to the deposition chamber when the reactor is cleaned internally.) And the control unit 32 selects an intake conduit path through which the remote plasma is injected into the deposition chamber. According to the present invention, the remote electric feeding device 4 is configured to supply the helium gas supplied by the shame gas supply terminal to an external device. It is freely active as an active species such as active fluorine radicals. 1301290 Among them, the back-end plasma supply equipment 4 can be any known port capable of generating plasma, such as but not limited to microwave discharge plasma source (4) (10) w_ this blood Source), inductively coupled plasma source (inductively c〇叩led, early barriei, diseharge plasma source, or capacitively coupled plasma source, etc. During the deposition process, the pressure in the reactor is controlled and maintained, and the gas in the reactor is withdrawn, and the machine base 12 can be connected to a vacuum pump 50. During the deposition process of the wafer, for example, when the wafer is performed When the HDpcvD niobium monoxide film is deposited, a semiconductor wafer (not shown) is first placed on the wafer holder 14, and then the controlled flow of the buffer gas is delivered to the deposition chamber via the gas supply end 34. The path is simultaneously introduced into the deposition chamber via the intake duct 11 and the intake duct 112 > Another reactive gas, oxygen, is injected into the deposition chamber from the gas supply end 35 through the intake duct 114. As shown in FIG. 1 and FIG. 2, a plurality of short-length intake ducts 112 and intake ducts 114 are arranged between every two long-length intake ducts 11A, for example, five intakes. The duct 112 and the intake duct 114 are between two long-length intake ducts 110. The short-length intake duct 112 and the intake duct 114 (hereinafter also referred to as "side ducts") are oriented in a predetermined direction. And the angle is inclined and evenly arranged in the circumference 1301290 of the deposition chamber, so that the reaction gas is ejected from the side direction toward the seed center of the deposition chamber. The longer intake duct of the long Lu is also the "top tube"). If the county reaches the gas to the upper part of the sediment (four), Lai Ching Μ by relatively few places. As is known to those skilled in the art, during deposition of the film, sufficient RF power is required to be placed close to the crystal holder 14, and the ion energy in the electropolymerization on the wafer surface is controlled. It is deposited on the surface of the wafer and deposited inside the reactor at the post-HDPCVD dioxide side of Shenji County, including the inner wall of the dome 2 (). In addition, HDPCVD cerium oxide is deposited at other locations, particularly at the nozzles of the inlet ducts ι 2 and 114, where the deposition residue is more difficult to clean using conventional cleaning procedures. After the HDPCVD dioxide film deposition process is completed, the semiconductor wafer is then removed from the wafer holder 14, and then the deposition chamber cleaning process can be performed, and the cycle can be processed in a certain amount. After the wafer, or after each wafer is produced, it is performed on-line. The cleaning procedure provided by the present invention is a two-stage cleaning procedure, wherein the first stage is based on nf3 gas plasma cleaning with a faster reaction rate. During the cleaning process, nf3 gas plasma is directly generated in the reactor. This phase can also be called "bright mode". The second stage is to turn off the RF power supplied to the reactor, but to introduce a more gentle far-end plasma to carry out the final removal step of the remaining deposition residue. Since there is no plasma discharge in the reactor, Usually, the species of the radical 1301290 type is dominant, and this stage can be called "dark mode (mQde)". From this, it can be seen that the feature of the present invention is the two-stage cleaning procedure of the "dark mode" of the second stage, supplemented by the "light mode". The roots of the county are better and thinner. After the semiconductor crystals are exhausted and removed from the reactor, the residual reaction gas (flu〇rin_ntaining Φ gas) of the deposition chamber is removed by vacuum pumping. Next, a fluorine-containing cleaning gas, such as 'gas, is introduced into the reaction chamber from the gas supply end 36, and the gas-containing cleaning gas is passed through the top tube 11G and the conduit through the control of the manifold and the control unit 32. 116 (hereinafter also referred to as "cleaning tube") is injected into the reaction chamber as shown in Fig. 3. The vacuum pump 50 is then used to maintain the system at the proper pressure. According to another preferred embodiment of the present invention, after the semiconductor wafer is deposited and removed from the reactor, the residual reaction gas of the deposition chamber is removed by vacuum pumping Φ 50 . Then, a fluorine-containing cleaning gas, such as Peng gas, is introduced into the reaction chamber from the gas supply end 36, and the fluorine-containing cleaning gas is simultaneously passed through the top tube 110, the cleaning tube 116, and the control by the manifold and the control unit 32. The reaction chamber is injected through side tubes 112 or 114 and then, with vacuum pump 50, the system is maintained at the appropriate pressure. Since the cleaning gas is simultaneously injected through the side tubes 2 or 114, a more uniform gas distribution state can be provided, thereby improving the uniformity of cleaning, and excessive etching of the top of the dome cover 20 and the lower side wall of the dome cover 2 can be avoided. Insufficient etching. 1 Then 'provide sufficient power to generate clean gas into the reaction chamber to generate electricity, and dissociate the NR gas molecules into active mouse radicals and gasified mouse free radicals in a high-density plasma environment. Wait. These regenerated, free radicals present in the gas plasma will bombard the deposits formed on the inner wall of the dome 20 and react with them to efficiently remove these deposits and quickly Clean the inside of the reactor. According to a preferred embodiment of the invention, the temperature in the deposition chamber during the first stage needs to be controlled above 100 ° C, or more preferably above 2 ° C. In accordance with a preferred embodiment of the present invention, the "light mode" of the first stage of the present invention is carried out at a relatively high pressure, for example, 3-15 Torr, preferably (4) Torr. Under the aforementioned relatively clean cleaning conditions, the clearance can be made to be fast and suitable for efficient cleaning of the top of the dome 20, the wafer holder 14 and the guard ring 16. However, the "light mode" of the first stage of the present invention may also be at a relatively low pressure; for example, 0.1-3 dry ears, preferably less than 2 Torr. Under the aforementioned lower pressure cleaning conditions, the cleaning speed is relatively slow, but relatively uniform, and is particularly suitable for complete and effective cleaning of the lower side walls of the dome cover 20 and the side tubes 112 and 114. In addition, according to another preferred embodiment of the present invention, the "bright" type of the first stage of the present invention can also be switched under a low pressure two-way shed. That is to say, the "light mode" of the first stage of the present invention, the on-site NF3 plasma cleaning - can be started at a relatively constant pressure for a predetermined time, and then converted to a lower pressure - force. ,vice versa. 1301290 According to a preferred embodiment of the present invention, the "light mode" of the first stage, the on-site nf3 plasma cleaning time lasts for about 10-300 seconds, but the wood is limited thereto, and the actual cleaning time depends on the deposition residue. Depending on the thickness. Please refer to FIG. 4, which is a schematic cross-sectional view showing the deposition residue remaining on the inner wall of the dome before the second stage of the "dark mode" is completed after the "light mode" of the first stage of the present invention is completed. . In the fourth figure, the thickness of the original niobium oxide film in the cleaning process is indicated by the dotted line and the numeral 6〇. After completing the "bright mode" of the first stage of the present invention, the thickness of the dioxide frequency 62 remaining near the top of the dome 20 is generally thinner than the thickness of the dioxide film 64 at the lower portion of the dome. . According to the present invention, the "light mode" of the first stage is stopped before the surface of the top of the dome 20 is exposed, that is, when the surface of the top of the dome 20 is left with some thickness of the dioxide, forming a similar The «] face tread in Figure 4 will RP power the Lin, and at the same time stop supplying the cleaning gas. Next, the "dark mode" of the second stage of the present invention is started, which is characterized in that the active fluorine produced by the remote electric power supply device 40 is directly directly discharged without removing the residual gas in the deposition chamber or breaking the vacuum. The remote electropolymerized gas of the free radicals is introduced into the deposition chamber via rapid switching of the manifold and control unit 32. Among them, the far, plasma gas can be injected into the deposition chamber via the side tubes 112 or 114, or injected through the top (10) and the cleaning tube m. In accordance with a preferred embodiment of the present invention, for optimum cleaning efficiency and uniformity, and to avoid generation of blackening patterns, it is recommended to inject distal plasma gas into the deposition chamber via the officer 112 or 114. 1301290 In the second stage, the far-end plasma gas generated by the remote plasma supply device 40 containing the active gas radicals can completely remove the remaining dioxide cracking film in the first stage from the inside of the reactor. Clearance. Since the RF power is not supplied, the cleaning rate in the first stage is relatively gentle (no ion bombardment occurs in the reactor), but the inside of the reactor can be cleaned more uniformly. In addition, since the temperature of the dome cover 20 has been increased to _- in the first stage of cleaning. (: left and right, therefore, in the second stage, the cleaning of the far-end plasma gas containing the active fluorine radical generated by the remote electrical supply device 40 can also be very efficient 'can be recorded in the first stage has not been removed The residual oxygen film is completely removed from the interior of the reactor without violent reaction with the exposed inner wall of the dome 2. According to the present invention, the "dark mode" of the second stage of the present invention is also At a relatively high force, 'for example, '3'15 Torr, preferably 5 Η) is carried out. Under the aforementioned pressure recordings of the same pressure, the cleaning speed can be faster, and it is particularly suitable for efficient cleaning of the top of the dome, the wafer 14 and the guard ring 16. The "dark mode" of the present invention can also be carried out at relatively low pressures, for example, 〇 = Torr, preferably less than 2 Torr. Under the relatively strong wire condition of the surface, the monthly batt speed is relatively uniform, but it is relatively uniform, and is particularly suitable for complete and effective cleaning of the lower side wall of the dome cover and the side pipes U2 and 114. 1301290 The "dark mode" of the present invention can also be switched between two different high/low pressure ranges. That is, it can be done at a relatively high pressure for a predetermined period of time, and then converted to a lower pressure, and vice versa. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should fall within the scope of the present invention. [Simple diagram of the drawing] A side view of the deposition chamber of the deposition machine. Figure 1 is a high-density recording chemical vapor phase according to a preferred embodiment of the present invention. Figure Shen __ gas line group lying on the schematic view. intention. Figure 3 depicts that God is the top view of the head of the hair tube that is placed in the sedimentary section.
【主要元件符號說明】 12機台底座 16保護環 U感應線圈 32歧管及控制單 1〇高密度電漿化學氣相沈積機台 14 晶圓承座 18 〇型橡圈 20 圓頂罩 30 氣體供應系統 f 1301290 34 氣體供應端 36 氣體供應端 50 真空泵浦 62 二氧化矽膜 110進氣導管 ^ 112進氣導管 116進氣導管 35氣體供應端 40遠端電漿供應設備 60二氧化矽膜 64二氧化矽膜 114進氣導管 20[Main component symbol description] 12 machine base 16 protection ring U induction coil 32 manifold and control single 1 〇 high density plasma chemical vapor deposition machine 14 wafer holder 18 橡 type rubber ring 20 dome cover 30 gas Supply system f 1301290 34 gas supply end 36 gas supply end 50 vacuum pump 62 ruthenium dioxide film 110 intake duct ^ 112 intake duct 116 intake duct 35 gas supply end 40 remote plasma supply device 60 ruthenium dioxide film 64 Ceria film 114 intake duct 20