1282176 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種薄膜電晶體，尤指一種具有雙通道的薄膜 電晶體。 Λ 、 【先前技術】 一般而言，薄膜電晶體液晶顯示器(thin fllm transist〇r i咖^ crystal display，TFT_LCD)主要由彩色濾光片基板與位於兩基板之 間的液晶層所構成，其中薄膜電晶體陣列基板具有多數個薄膜電 曰曰體，並且薄膜電晶體是以矩陣的方式排列，且每個薄膜電晶體 都有一畫素電極與其電性連接，形成一像素單元。薄膜電晶體是 用來作為液晶顯示單元之開關元件。其中，每一個薄膜電晶體是 在絕緣基板上依序製作閘極、通道層、源極/汲極。 請參考第1®，第1g係為f知技術之薄膜電晶體之結構示 意圖。如上所述，習知技術的液晶顯示器具有複數個排列整齊的 陣列式像素單元（未顯示該像素單元主要由一像素電極⑴和 一薄膜電晶體100所構成。其中薄膜電晶體1〇〇包含有一基板（未 顯示）、一閘極1〇6、一通道層112和一源極/汲極丨〇8/11〇層，其 中源極/及極108/110之間又具有通道丨14。且閘極1〇6係與掃瞄線 105電性連接，而源極級極108/110係分別與資料線1〇2以及像素 電極111電性連接。 1282176 — j一疋在薄膜電日日體的製作過程中，常會因為通道回蚀刻 (back channel etch，BCE )制扣 3^1282176 IX. Description of the Invention: [Technical Field] The present invention relates to a thin film transistor, and more particularly to a thin film transistor having two channels.先前 , [Prior Art] In general, a thin film transistor liquid crystal display (TFT-LCD) is mainly composed of a color filter substrate and a liquid crystal layer between the two substrates, wherein the thin film is electrically The crystal array substrate has a plurality of thin film electric cells, and the thin film transistors are arranged in a matrix manner, and each of the thin film transistors has a pixel electrode electrically connected thereto to form a pixel unit. The thin film transistor is used as a switching element of a liquid crystal display unit. Each of the thin film transistors sequentially forms a gate, a channel layer, and a source/drain on the insulating substrate. Please refer to the 1®, 1g series for the structure of the thin film transistor of the technology. As described above, the liquid crystal display of the prior art has a plurality of arrayed pixel units arranged neatly (the pixel unit is not shown to be mainly composed of a pixel electrode (1) and a thin film transistor 100. The thin film transistor 1 includes one A substrate (not shown), a gate 1〇6, a channel layer 112, and a source/drain 丨〇8/11 layer, wherein the source/pole 108/110 has a channel 丨14 therebetween. The gate 1〇6 is electrically connected to the scan line 105, and the source stage 108/110 is electrically connected to the data line 1〇2 and the pixel electrode 111 respectively. 1282176 — j is in the thin film electric day and body In the production process, it is often buckled by the back channel etch (BCE) 3^
衣％殘留以及汲極與源極通道（SD —chamel)製程殘留等問題’使得一些金屬微粒或者是導電的污染 物在凡成細及π洗製程後，仍殘留在薄膜電晶體的通道處，產 生點缺陷’造成薄膜電晶體中源極和及極之間的通道發生短路情 況，破壞薄膜電晶體控制開關的作用。 ^ 絲考第2至351 ’第2至3圖係為習知技術修補薄膜電晶 _體通道點缺陷之示意圖。第2和3圖之條件係延續第丨圖之條件， 不同的是’位於祕110和源極⑽之間的通道114卻都發生了 點缺202的情况，使得通道114㈣用被破壞，造成薄膜電晶 體1〇〇無法正常開啟或關閉來驅動相對應之像素單元（未顯示）。 在習知技術中’修補薄膜電晶體通道點缺陷之方法主要有兩種， 第-種如同第2圖所示，利用點銀膠等方式，形成一導線2〇4直 ♦接將沒極110和資料線102電連接起來，因此不論掃瞒線(未顯示) 有無電壓訊號傳入，薄膜電晶體謂所對應之像素單元（未顯示） 内的像素電極和共職極之間—直存在有電位差，亦即使此像素 單元（未顯示）内液晶分子直接隨資料線1〇2的所有資料訊號偏 轉’維持呈現⑨點的狀態。另外—種修補細電晶體通道點缺陷 的方法，則如同第3圖所示，利用雷射等切割方法將汲極丨川局 部切斷，形成切口 206，讓汲極110和源極108無法電連結，使得 其所對應的像素單元（未齡）無法接受雜線1()2的資料訊號 而產生電位差’液晶分子不會偏轉，也就―直轉暗點的狀態。 1282176 雖然’習知技術可以利用直接連接汲極和資料線的方式，使 發生點缺_像素單元—直_亮點，或者靖汲極使得發生點 ，陷的像素單元始終保持暗財方式，去修補發生點缺陷的像素 早7L ’但是’無論哪—種修财式，键法正常鷄發生點缺陷 咐象素單元。因此如何研發出—種修補方法，使得發生點缺陷的 賴電晶_能正麵持像料元_伽與魏，實為該領域 之重要諉擷。 【發明内容】 本發明係提供—種雙通道薄膜電晶體，以解決上述問題。 本發批—擁實施财，储供—鶴猶触電 日曰顯示器卿网的雙通道薄膜電晶體，其包含有—閘極、4 /成雙树’以及，-通道層位於該源極與紐極和 間0 、 由於本發明之賴電晶__具有_汲極電極， ^極電極各自和源極之間均可形成獨立通道，以構成—個雙^ 體結構。因此’當其中—個通道因為點缺陷而被二 便可猎由靖部分雜_的方式，終止該異常通道的運作寺 利用其他概驅_軸1轉崎元内的薄4 ^82176 " 晶體依舊可以維持正常作動的功能。 【實施方式】 π參考第4圖’第4圖係為本發明薄膜電晶體之—較佳實施 例的結構示賴。本發明的薄難晶體結構可應用在薄膜電晶體 乂曰0.4不$或者是發光二極醜示器㈣anie Η咖emitting diQde， 鲁⑽D) ’此實施例中係以應用於薄膜電晶體液晶顯示器為例。如 .第4圖所示，薄膜電晶體液晶顯示器包含有複數個像素單元（未 '顯示）’而每個像素單元皆由一個薄膜電晶體500來控制其相對應 之像素單元内的液晶分子是否偏轉。其巾，各薄膜電晶體獅均 具有基板（未顯不），閘極5〇6言史置於基板上，閘極絕緣層（未顯 不）覆蓋於閘極5〇6和基板上，以及通道層512言免置於閘極絕緣 層上’並位於s亥閘極5〇6上方。另外，各薄膜電晶體均具有 一和掃猫線505相連之閘極5%，一個z型的源極猶和一個c型 _的沒極510。此外，C型的汲極又包含兩條L型的汲極電極 51〇a、510b ’而I型的源極5〇8則卡合於c型的没極51〇的缺口 中’並且與兩條L型的沒極電極51〇a、51〇b分別在通道層512中 形成通道512a、512b，其中閘極506和通道層512之間又具有問 極絕緣層（未顯示）。其中，源極5〇8係與資料線5〇2電性連接， 而汲極電極510a、510b係與該像素電極521電性連接。所以，當 像素單元（未顯示）内的閘極5〇6受掃瞒線5〇5之電壓訊號開啟田 時’位於源極508、汲極電極通、5廳之間的通道層512便會 因啟始電壓之反轉作用而產生通道（channd) 512a、，以讓 1282176 原極508和;及極電極5〗Qa、5〗Qb形成電性連接，進而讓資料線观 之貪料訊號得以藉由源極5G8傳入汲極電極偷、遍，而使沒 極510所雜連接的像素電極521和相對應的共同電極（未顯示） 產生電位差’使得像料元（未顯示）⑽液晶分子產生偏轉。 如别所述’在_電晶體的製作過程中，常會因為通道回餘 刻（BCE)冑知殘留以及汲極電極與源極通道⑽也麵以）製程 殘留等問題，使得-些金屬微粒或者是導電的污_殘留在薄膜 電晶體的通道處，產生點缺陷·，造成薄膜電晶體中源極和没極電 極之間的通道發生短路情況，破壞薄難晶體控侧關的作用。 明參考第5圖’第5圖係為本發明修補薄膜電晶體通道點缺 之較佳實施例的示意圖。第5圖係延續第4圖的條件，並說 明當第4圖之薄膜電晶體500發生點缺陷6〇2時的修補方式。如 第5圖所示，祕電極撕和源極观之間發生點缺陷，使 得位於汲極電極510a和源極508間之通道5123的功用被破壞。 在本較佳實施财係_如__等方式，局部靖祕電極 51〇a，形成切口 604，讓汲極電極51〇a無法和像素電極521電連 結’所以像素電極521不再經由汲極電極51〇a來傳遞資料訊號， 但是仍保留了汲極電極510b和源極508之間藉由通道51几來電 連結的完整性。所以’當像素單元(未顯示）内的閘極5〇6受掃瞄 線505之電壓訊號開啟時，位於源極5〇8、汲極電極51%之間的 通道層512便會因啟始電壓之反轉作用而產生通道512b，以讓源 1282176 .極508和沒極電極遍形成電性連接，進而讓資料線5〇2之資料 .訊號得以藉由没極電極娜傳入和汲極510才目電性連接的像素電 極52卜並和相對應的共同電極（未顯示）產生電位差，使得像素 單兀（未顯示）内的液晶分子產生偏轉。也就是說，利用本發明 修補發生點賴_的像素單元依舊可以_正常作動的功能。 請參考第6 ® ’第6 _為本發_難晶體之另一較佳實 籲施例的結構示意圖。第6圖和第4圖的結構相似，皆係表示薄膜 電晶體液晶顯示器之像素單元（未顯示）内的薄膜電晶體結 構。其中，_電晶體700具有基板（未顯示），閘極7〇6設置於 基板上’閘極絕緣層（未顯示）覆蓋於閘極7〇6和基板上，以及 通道層7U設置於閘極絕緣層上，並位於該問極7〇6上方。另外， 各薄膜電晶體700均具有-和掃瞒線7〇5相連之閘極·，一個τ 型的源極708和-個;τ型的沒極710,而冗型的沒極71〇又包含兩 #條L型的沒極電極710a、71〇b，τ型的源極7〇8則卡合於兩條[ 型的没極電極710a、7勘之間，並且與兩條L型的没極電極偷、 71〇b分別在通道層712中形成通道712a、712b，其中閘極了㈨和 通道層712之間又具有閘極絕緣層（未顯示）。所以，當像素單元 (未顯示）内的閘極706受掃瞄線705之電壓訊號開啟時，位於 源極708、汲極電極71〇a、710b之間的通道層712便會因啟始電 壓之反轉作用而產生通道（ehannd) 712a、712b，以讓源極7〇8 和及極電極710a、710b形成電性連接，進而讓資料線7〇2之資料 讯唬得以藉由源極708傳入汲極電極71〇a、71〇b，而使汲極71〇 1282176 .所電性連接的像素電極？21和相對應的共同電極（未顯示）產生 電位差，使得像素單元（未顯示）⑽液晶分子產生偏轉。 請參考第7圖’第7圖係為本發明修補薄膜電晶體通道點缺 陷之-較佳實施例的示意圖。第7圖係為第6圖之薄膜電晶體· 發生點缺陷8〇2時的修補方式示意圖。第7圖中通道皿發生點 缺陷8G2的情況時’在本較佳實施例中係如雷射等切割等方 式’由局部切斷没極電極710b，形成切口 8〇4，讓没極電極鳩 .無法和像素電極瓜電連結，所以像素電極721不再經由没極電 極鳩來傳遞資料訊號，但是仍保留極·源極駕 之間藉由觀712a錢賴贼錄。咖，#騎料(未顯示) 内的閘極706受掃瞒線7〇5之電壓訊號開啟時，位於源極7〇8、沒 極電極710a之間的通道層712便會因啟始電壓之反轉作用而產生 f道7以，以讓源極和沒極電極7收形成電性連接，進而讓 囑資料線702之資料訊號得以藉岐極電極施傳入和汲極71〇相 電性連接的像素電極721，並和相對應的共同電極（未顯示）產生 ^立差，使得像素單元（未顯示）_液晶分子產生偏轉。也就 心兒’利用本發明修補發生點缺陷8〇2的像素單元依舊可以維持 正常作動的功能。 值仔-提的是，本發明並不侷限於以上兩種實施例中所述的 :條沒極電極的設計，只要符合設計基準(design_的原則，並 製私條件及電路料之_，即可於各_電晶財形成複 1282176 . 數個通道，另外，本發明中源極與汲極電極的圖案配置方式，也 , 可有多種變化型式，並不囿限於以上兩種實施例中所述的外型樣 . 式。而且，本發明之薄膜電晶體因具有雙通道，所以不但具有可 實質修補之好處，又大幅增加了薄膜電晶體的通道寬度。 由於本發明之薄膜電晶體的没極具有兩個汲極電極，而之此 汲極電極各自和源極之間均可形成獨立通道，所以構成_個雙通 •道電晶體結構。因此，當其中一個通道因為點缺陷而被破壞時， 便可藉由切斷部分汲極電極的方式，終止該異常通道的運作，並 利用其他魏完㈣通道繼續作H轉像料元内的薄膜電 曰曰體依舊可以維持正常作動的功能。 、 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範 圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖係為習知技術之薄膜電晶體之結構示意圖。 第2至3圖係為習知技術修補薄膜電晶體通道點缺陷之示意圖。 第4圖係為本發明薄膜電晶體之一較佳實施例的結構示意圖。 -第5圖係為本發明修補薄膜電晶體通道點缺陷之一較佳實施例的 -示意圖。 f6圖係為本發明薄膜電晶體之另—較佳實施例的結構示意圖。 第7圖係為本發明修補薄膜電晶體通道點缺陷之一較佳實施例的 1282176 示意圖。 【主要元件符號說明】 100、500、700 102、502、702 105、505、705 106、506、706 _ 108、508、708 110、510、710 in、52卜 721 112、512、712 114、512a、512b、712a、712b 202、602、802 204The residual % of the coating and the problem of the residual process of the drain and source channels (SD-chamel) make some metal particles or conductive contaminants remain in the channel of the thin film transistor after the fine and π washing process. The generation of point defects causes a short circuit in the channel between the source and the pole in the thin film transistor, which destroys the function of the thin film transistor control switch. ^ 丝考第2至351 ′′ Figures 2 to 3 are schematic diagrams of a conventional technique for repairing a thin film of a transistor. The conditions in Figures 2 and 3 are the conditions of the continuation of the diagram, except that the channel 114 between the secret 110 and the source (10) has a point 202, causing the channel 114 (four) to be destroyed, resulting in a film. The transistor 1〇〇 cannot be turned on or off normally to drive the corresponding pixel unit (not shown). In the prior art, there are mainly two methods for repairing the defects of the film transistor channel. The first type is as shown in FIG. 2, and a wire is formed by using a silver paste or the like to form a wire 2〇4. The data line 102 is electrically connected, so that no voltage signal is transmitted through the broom line (not shown), and the thin film transistor is between the pixel electrode and the common electrode in the corresponding pixel unit (not shown). The potential difference is also maintained even if the liquid crystal molecules in the pixel unit (not shown) are deflected directly with all the data signals of the data line 1〇2. In addition, as for the method of repairing the defects of the fine transistor channel point, as shown in Fig. 3, the bungee 丨chuan is partially cut by a laser cutting method to form a slit 206, so that the drain 110 and the source 108 are not electrically charged. The connection is such that the corresponding pixel unit (not aged) cannot receive the data signal of the miscellaneous line 1 () 2 to generate a potential difference. The liquid crystal molecules are not deflected, that is, the state of the direct-dark point. 1282176 Although 'the prior art can use the way of directly connecting the bungee and the data line, so that the point of occurrence _ pixel unit - straight _ bright point, or Jing Hao extremely makes the point, the trapped pixel unit always keeps the dark money way, to repair The pixel where the point defect occurs is 7L early 'But' no matter which kind of repair type, the key method normal chicken occurs point defect 咐 pixel unit. Therefore, how to develop a kind of repairing method, so that the point-defective Lai Jingjing_ can hold the image element _ gamma and Wei, which is an important part of the field. SUMMARY OF THE INVENTION The present invention provides a two-channel thin film transistor to solve the above problems. This is a batch of dual-channel thin-film transistors that have been implemented by the company, which includes a gate, a 4/single tree, and a channel layer at the source. The neopolar and the inter-electrode __ have the _ 汲 electrode, and the ^ electrode can form an independent channel between the source and the source to form a double structure. Therefore, 'When one of the channels is due to a point defect, it can be hunted by the Jing Partial Miscellaneous _, the operation of the abnormal channel is terminated. The other general drive _ Axis 1 turns the thin inside the Kawasaki 4 ^82176 " Can maintain the function of normal operation. [Embodiment] π refers to Fig. 4', and Fig. 4 is a structural view of a preferred embodiment of the thin film transistor of the present invention. The thin hard crystal structure of the present invention can be applied to a thin film transistor 乂曰0.4 or a light-emitting diode uglier (4) anie emitting coffee emitting diQde, Lu (10) D) 'This embodiment is applied to a thin film transistor liquid crystal display example. As shown in FIG. 4, the thin film transistor liquid crystal display includes a plurality of pixel units (not 'shown') and each pixel unit is controlled by a thin film transistor 500 to control whether liquid crystal molecules in the corresponding pixel unit are deflection. The towel, each of the thin film transistor lions has a substrate (not shown), the gate 5 〇 6 history is placed on the substrate, the gate insulating layer (not shown) covers the gate 5 〇 6 and the substrate, and The channel layer 512 is erected on the gate insulating layer 'and is located above the s-gate 5 〇 6 . In addition, each of the thin film transistors has a gate 5% connected to the whisk line 505, a z-type source and a c-type _ 510. In addition, the C-type drain further includes two L-shaped drain electrodes 51〇a, 510b' and the I-type source 5〇8 is engaged in the c-type non-polar 51〇 gap and with The L-shaped gate electrodes 51A, 51B form channels 512a, 512b in the channel layer 512, respectively, wherein the gate 506 and the channel layer 512 have a further insulating layer (not shown). The source 5〇8 is electrically connected to the data line 5〇2, and the drain electrodes 510a and 510b are electrically connected to the pixel electrode 521. Therefore, when the gate 5〇6 in the pixel unit (not shown) is turned on by the voltage signal of the broom line 5〇5, the channel layer 512 located between the source 508, the drain electrode, and the 5 hall will A channel (channd) 512a is generated due to the inversion of the starting voltage, so that the 1282176 primary pole 508 and the pole electrode 5 Qa, 5 and Qb are electrically connected, thereby allowing the data line to observe the greedy signal. The pixel electrode 521 connected to the gate 521 and the corresponding common electrode (not shown) generate a potential difference by the source 5G8 being transmitted to the drain electrode, so that the image element (not shown) (10) liquid crystal molecule Deflection occurs. As described above, in the process of making a transistor, it is often caused by the problem of residual process and the residual process of the drain electrode and the source channel (10), so that some metal particles or It is a conductive stain _ remaining in the channel of the thin film transistor, causing point defects, causing a short circuit in the channel between the source and the electrode of the thin film transistor, destroying the effect of the thin and difficult crystal control side. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 5 is a schematic view showing a preferred embodiment of the repair of a thin film transistor channel in the present invention. Fig. 5 is a continuation of the condition of Fig. 4, and shows a repairing method when the thin film transistor 500 of Fig. 4 has a point defect of 6 〇 2. As shown in Fig. 5, a point defect occurs between the secret electrode tear and the source view, so that the function of the channel 5123 between the drain electrode 510a and the source 508 is broken. In the preferred embodiment of the present invention, the local accommodating electrode 51〇a forms a slit 604, so that the drain electrode 51〇a cannot be electrically connected to the pixel electrode 521. Therefore, the pixel electrode 521 is no longer via the drain electrode. The electrode 51A transmits the data signal, but still retains the integrity of the incoming connection between the drain electrode 510b and the source 508 via the channel 51. Therefore, when the gate 5〇6 in the pixel unit (not shown) is turned on by the voltage signal of the scan line 505, the channel layer 512 located between the source 5〇8 and the drain electrode 51% is started. The reversal of the voltage produces a channel 512b, so that the source 1282176, the pole 508 and the electrodeless electrode are electrically connected, so that the data of the data line 5〇2 can be transmitted through the electrodeless electrode and the bungee The pixel electrode 52, which is electrically connected to the 510, generates a potential difference with a corresponding common electrode (not shown), so that liquid crystal molecules in the pixel unit (not shown) are deflected. That is to say, the pixel unit in which the occurrence of the problem is repaired by the present invention can still function as a normal operation. Please refer to the structural diagram of another preferred embodiment of the 6th ‘6th _Basic _ difficult crystal. The structures of Fig. 6 and Fig. 4 are similar, and each represents a thin film transistor structure in a pixel unit (not shown) of a thin film transistor liquid crystal display. Wherein, the transistor 700 has a substrate (not shown), and the gate 7〇6 is disposed on the substrate. A gate insulating layer (not shown) covers the gate 7〇6 and the substrate, and the channel layer 7U is disposed on the gate. On the insulation layer, and above the question pole 7〇6. In addition, each of the thin film transistors 700 has a gate connected to the broom line 7〇5, a source 708 of a τ type, and a τ-type immersion 710, and a redundant type of immersed 71 〇 A two-pole L-type electrodeless electrode 710a, 71〇b is included, and a τ-type source terminal 7〇8 is engaged between two [types of the electrodeless electrode 710a, 7 and the two L-shaped The electrodeless electrode steals 71 〇b to form channels 712a, 712b in the channel layer 712, respectively, wherein the gate (9) and the channel layer 712 have a gate insulating layer (not shown). Therefore, when the gate 706 in the pixel unit (not shown) is turned on by the voltage signal of the scan line 705, the channel layer 712 located between the source 708 and the drain electrodes 71A and 710b is caused by the start voltage. The inversion generates an channel (ehannd) 712a, 712b to electrically connect the source terminal 7 〇 8 and the electrode electrodes 710a, 710b, thereby allowing the data signal of the data line 7 〇 2 to pass through the source 708. The pixel electrodes that are electrically connected to the drain electrodes 71〇a, 71〇b and the drain electrodes 71〇1282176? 21 and a corresponding common electrode (not shown) generate a potential difference such that the liquid crystal molecules of the pixel unit (not shown) (10) are deflected. Please refer to Fig. 7'. Fig. 7 is a schematic view of a preferred embodiment of the repaired film transistor channel defect of the present invention. Fig. 7 is a schematic view showing the repairing method of the thin film transistor of Fig. 6 when a point defect of 8 〇 2 occurs. In the case where the channel dish has a point defect of 8G2 in Fig. 7, 'in the preferred embodiment, such as laser or the like, the method of cutting or the like is performed by locally cutting the electrodeless electrode 710b to form a slit 8〇4, so that the electrodeless electrode is The pixel electrode 721 cannot be electrically connected to the pixel electrode, so the pixel electrode 721 no longer transmits the data signal via the electrodeless electrode ,, but still retains the pole/source driving between the 712a money. When the voltage signal of the gate 706 in the riding material (not shown) is turned on by the broom line 7〇5, the channel layer 712 located between the source 7〇8 and the electrodeless electrode 710a will be started. The inversion acts to generate the n-channel 7 so that the source and the electrodeless electrode 7 are electrically connected, so that the data signal of the data line 702 can be transferred to the drain electrode and the gate electrode. The pixel electrode 721 is connected to the opposite side and is opposite to the corresponding common electrode (not shown) such that the pixel unit (not shown) _ liquid crystal molecules are deflected. In other words, the pixel unit that has a point defect of 8〇2 can still be used to maintain the function of normal operation. It is to be noted that the present invention is not limited to the above two embodiments: the design of the strip electrode is as long as it conforms to the design basis (the principle of design_, and the manufacturing conditions and circuit materials) In the present invention, the pattern arrangement of the source and the drain electrodes in the present invention may be varied, and is not limited to the above two embodiments. Moreover, the thin film transistor of the present invention has a dual channel, so that it not only has the advantage of substantial repair, but also greatly increases the channel width of the thin film transistor. The pole has two drain electrodes, and the drain electrode can form an independent channel between the source and the source, thus forming a double-pass transistor structure. Therefore, when one of the channels is destroyed due to a point defect At this time, the operation of the abnormal channel can be terminated by cutting off part of the drain electrode, and the use of other Wei (4) channels to continue the operation of the thin film electrode in the H-turn element can still maintain normal operation. The above description is only the preferred embodiment of the present invention, and all the equivalent changes and modifications made by the scope of the present invention should be within the scope of the present invention. [Simple Description] Figure 1 A schematic diagram of the structure of a thin film transistor of the prior art. Figures 2 to 3 are schematic diagrams of a conventional technique for repairing a dot defect of a thin film transistor. Fig. 4 is a preferred embodiment of a thin film transistor of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS - Figure 5 is a schematic view of a preferred embodiment of a repaired film transistor channel defect of the present invention. Figure 6 is a schematic view of another preferred embodiment of the thin film transistor of the present invention. The figure is a schematic diagram of 1282176 which is a preferred embodiment of the repaired film transistor channel point defect of the present invention. [Main element symbol description] 100, 500, 700 102, 502, 702 105, 505, 705 106, 506, 706 _ 108 , 508, 708 110, 510, 710 in, 52 721 112, 512, 712 114, 512a, 512b, 712a, 712b 202, 602, 802 204
206、604、804 510a、510b、710a、710b 薄膜電晶體 資料線 掃猫線 閘極 源極 汲極 像素電極 通道層 通道 點缺陷 導線 切口 >及極電極206, 604, 804 510a, 510b, 710a, 710b thin film transistor data line sweeping cat line gate source drain pole pixel electrode channel layer channel point defect wire incision > and pole electrode