TWI275157B - Workpiece holder for processing apparatus, and processing apparatus using the same - Google Patents

Workpiece holder for processing apparatus, and processing apparatus using the same Download PDF

Info

Publication number
TWI275157B
TWI275157B TW092107513A TW92107513A TWI275157B TW I275157 B TWI275157 B TW I275157B TW 092107513 A TW092107513 A TW 092107513A TW 92107513 A TW92107513 A TW 92107513A TW I275157 B TWI275157 B TW I275157B
Authority
TW
Taiwan
Prior art keywords
workpiece holder
sealing member
component
joint
ceramic body
Prior art date
Application number
TW092107513A
Other languages
Chinese (zh)
Other versions
TW200307337A (en
Inventor
Masuhiro Natsuhara
Hirohiko Nakata
Akira Kuibira
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002112523A external-priority patent/JP3870824B2/en
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200307337A publication Critical patent/TW200307337A/en
Application granted granted Critical
Publication of TWI275157B publication Critical patent/TWI275157B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An inexpensive workpiece holder having high reliability and a processing apparatus equipped with the workpiece holder are provided, in which damage caused by oxygen in the air is prevented. The holder comprises: a ceramic body which has an electrode and a heater circuit and which can holds a workpiece; a tubular member having an end portion connected to the ceramic body; a sealing member which is disposed inside the tubular member and which isolates a space inside the tubular member into two regions: a region on the first end portion (""sealed portion"") and a region on the opposite side (""opposite region""); and power supply conductive members which extend from the opposite region side, penetrating the sealing member to the sealed region side, and which are electrically connected to the electrode and the heater circuit.

Description

1275157 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於保持一種在一諸如一半導體製造 裝置之處理裝置内被加以處理之諸如一晶圓之材料之支持 斋（以下稱為工件支持器或基座），及一使用該支持器之處理 裝置。本發明特別是關於一種對熱循環有極佳可靠性之工 件支持器及具有該工件支持器之處理裝置。 【先前技術】 直到目前為止在半導體裝置之製造步驟中、薄膜之形成 或蝕刻處理均是在工件上，亦即在半導體基板上，進行。 用糸處理遠種基板之處理裝置具有一基座，該基座為在半 導體基板處理中用以保持一半導體基板之支持器。 在第7153706號日本未審查專利申請公開案中曾揭露一 種傳統式之^ _L述基座。 但該傳統式之上述基座有下述之一些問題。亦即為在一 支撐台内供應一慣性氣體，必須為基座提供一供氣管，此 外，供應慣性氣體所需之裝置，諸如質量流控制器，必須 連接至該供氣管。因此使該基座之結構變為複雜而增加用 做工件支持器之基座之製造成本。 再者，使用此種基座，因必須一直對支撐台内供應慣性 氣體，也增加該基座之運行成本。 【發明内容】 本發明之-目的是提供一㈣可藉避免反應氣體所造成損 害而獲得高可靠性之廉價工件支持器及一種有該工件支持 1275157 器之處理裝置。 本發明之工件支持器包括：一有一電路且能支持一工件 之陶瓷體；一有一固定至該陶瓷體背面之末端部分（第一末 端部分）之管狀構件；一置於該管狀構件内且與之接合並將 該管狀構件内一空間分為兩個區域之密封構件；一位於第 一末端部分邊上之區域（密封區域）及一位於相對邊上之區 域（相對區域）；及從相對區域邊伸出，穿透該密封構件而至 該密封區域邊且電連接至該陶瓷體上電路之電源供應導電 構件。 本發明之處理裝置具有上述之工件支持器。 用於半導體製造裝置中之基座要耐得住諸如在半導體基 板上蝕刻處理之嚴厲處理狀況，除此之外該基座尚須廉 價。使用本發明之工件支持器可獲一種用於半導體製造裝 置内確切耐得住該嚴厲處理狀況之廉價基座。 在本發明工件支持器中，因密封構件是置於支撐陶瓷體 之管狀構件中且與之接合，用於陶瓷體電路之連接部分是 連接至電源供應導電構件而可與工件支持器周圍之環境隔 開。因此以本發明工件支持器用於處理諸如基板之工件， 可防止連接部分被存在於管狀構件内空氣中所含氧之損 害。所以不必如上述為避免連接部分之損害而對管狀構件 内之空間供應慣性氣體。如此可減少該工件支持器之成本。 【實施方式】 按照本發明第一方面之一種工件支持器包括：一有一電 路且用以支持一工件之陶瓷體；一有一末端部分（第一末端 1275157 部分）接合至該陶瓷體之管狀構件；一置於該管狀構件内且 與之相接合並將該管狀構件内一空間分隔為兩區域之密封 構件：一在第一末端邵分邊上之區域（密封區）；及一在相對 邊上之區域（相對區）；及從該相對區邊伸至該密封區邊，穿 透該密封構件，且電連接至該電路之電源供應導電構件。 該陶瓷體内之電路包括對工件加熱之一加熱器電路，一 保持一工件於該陶瓷體上之靜電電極，或一產生電漿之射 頻電極。用於形成此一電路之材料可為低氧化阻力之鎢或 鉑等。此外，具有低氧化阻力之材料在某些情形下也用於 在該電路與該電源供應導電構件間連接部分處之電源供應 接頭。因此，若電源供應導電構件與該電路間之連接部分 在空氣中時，曝露於管狀構件内之電路若在該工件支持器 被加熱且置於其上之半導體基板或類似物被蝕刻時即可能 被存在於空氣中之氧所腐蚀。 但按照本發明，用於陶瓷體與電源供應構件間之連接部 分是位於由密封構件、管狀構件及陶瓷體所包圍之區域中 (亦即上述之密封區）。若在管狀構件與陶瓷體間及密封構件 與陶瓷體間形成接合部分而有預定之氣密度時，上述連接 部分位於其中之部分（密封部分）即與該管狀構件内被密封 部分包圍之空間隔開（以下稱為包圍區）。因此，當進行諸如 蝕刻之加熱處理時可防止該電路或形成該連接部分之材料 不會被管狀構件内環境中存在之氧所腐蝕。 此外，如上所述因該密封構件是置於該管狀構件内而使 密封區與包圍區隔開，可不必有如傳統式裝置中所提供對 1275157 該管狀構件供應慣性氣體之裝置。因此，該工件支持器之 結構可予以簡化且其製造成本可因而減少。另外，當用該 工件支持器處理一工件時，不必連續供應慣性氣體至管狀 構件中，因而減少使用上述工件支持器處理之運行成本。 再者，為構成該工件支持器之陶瓷體、管狀構件、密封 構件、及電源供應導電構件，選擇相互間差別不大之具有 適當熱膨脹係數之材料可避免諸如因環境溫度改變所造成 熱應力局部集中之問題。因而即可獲得能對付熱循環所造 成熱磁滯之高可靠性工件支持器。 在按照本發明第一方面之工件支持器中，密封構件最好 是能與陶瓷體之背面（晶圓將被安裝其上表面之相對邊）接 觸。此外，在按照本發明第一方面之工件支持器中，可用 提供於其間之固定接合構件將密封構件接合至陶瓷體表 面0 在此情形下，密封構件本身不需要有大力量，因該陶瓷 體可支撐該密封構件。因而密封構件之厚度可減小。於是 可使設計該密封構件之自由度較大。 在按照本發明第一方面之工件支持器中，可藉透過該密 封構件施加10 0 g/cm2或更大之壓力對固定接合材料加熱而 形成該固定接合構件。 因此固定接合構件中之小間隙數目減少，如此即可獲得 有極佳氣密度之接合部分。此外，陶瓷體與密封構件間之 接合力可同時增大。將施加至固定接合構件之壓力定在100 g/cm2或更大之理由是當壓力在100 g/cm2或更大時可增加 1275157 固定接合構件之氣密特性，而當壓力小於100 g/cm2時即無 法獲得增加氣密度之優點。 在按照本發明第一方面之工件支持器中，密封構件可置 於離陶瓷體表面一段距離處。 若如此時，因密封構件不與陶瓷體接觸而可防止陶瓷體 溫度之分布。於是由於密封構件與陶瓷體之接觸因與密封 構件接觸而變為不均勻。結果可使陶瓷體中之溫度分布更 為一致，因而也易於使得保持在陶瓷體上工件中之溫度分 布一致。 在按照本發明第一方面之工件支持器中，被密封構件、 管狀構件及陶瓷體包圍之區域可為真空或非氧化環境。 若如此時，可有效防止電源供應導電構件及電源供應導 電構件與該區域内電路間連接部分之氧化。 在按照本發明第一方面之工件支持器中，從被密封構 件、管狀構件及陶瓷體所包圍區域至其他區域之氦漏洩率 可為10·8 Pa，m3/s或更小。 若如此時，當該密封區内之氦漏洩率設定在上述範圍内 之值時，位於該區内電源供應導電構件及該電路與電源供 應導電構件間連接部分之氧化一定可予防止。 按照本發明第一方面之工件支持器可更包括一提供於管 狀構件與密封構件間接合部分處之接合構件。 若如此時，管狀構件與密封構件間接合部分處之間隙可 由該接合構件填起。因而可改善上述接合部分之氣密度。 於是管狀構件内之第一區可確切與圍繞該工件支持器之一 1275157 外部區隔離。 在按照本發明第一方面之工件支持器中，該接合構件可 有一表面從該管狀構件内部表面之一部分伸至該密封構件 表面之一部分，且該接合構件之表面最好為一 IHJ入彎月形。 當該接合構件有上述形狀時（所謂之彎月形），應暸解該接 合構件對密封構件及管狀構件之表面有良好之可浸潤性。 亦即，當接合構件有該凹入彎月形時，接合部分即有高氣 密度。因此能確切抑制在接合部分處產生漏洩。 按照本發明第二方面之工件支持器包括一有一電路且用 以支持一工件之陶瓷體；一有一末端部分固定至該陶瓷體 背面之管狀構件；電連接至位於管狀構件内電路之電源供 應導電構件；及置於管狀構件内且固定至該陶瓷體背面之 密封構件，它形成分別圍繞各連接部分之一些被密封部分 且該密封構件將該等連接部分之被密封部分與圍繞該密封 構件外部周邊之環境隔開。 於是在陶瓷體内之該電路與電源供應導電構件間之該等 連接部分均位於一由密封構件及陶瓷體所包圍之區内。當 密封構件與陶瓷體間形成接合區而有預定之氣密度時，該 等連接部分位於其中之區域即與圍繞該密封構件之一空間 隔開。因此，當進行諸如蝕刻之加熱處理時即可防止發生 該電路或形成該等連接部分之材料被存在於管狀構件内空 氣中之氧腐蝕之問題。 此外，因密封構件是置於管狀構件内且上述連接部分與 包圍該密封構件之區域隔開（密封），即不需要安裝供應慣性 1275157 氣體至管狀構件内之器具。所以工件支持器之結構可予簡 化且因而減少其製造成本。此外，當以該工件支持器處理 (蝕刻或類似處理）工件時，不需要供應慣性氣體至管狀構件 内，因而可減低使用該工件支持器處理之運行成本。 再者，選擇相互間熱膨脹係數差別不大之材料用於構成 該工件支持器之陶瓷體、管狀構件、密封構件及電源供應 導電構件，可避免諸如因環境溫度改變而造成熱應力局部 集中之問題。於是可實現對諸如熱循環之熱歷史有高可靠 性之工件支持器。 此外，如上所述因密封構件係為該電路與電源供應導電 構件間之連接部分個別提供，每一密封構件之大小可予減 小。於是可減少密封構件之成本。此外，因密封構件與陶 瓷體接觸之區域減小，可減小密封構件對陶瓷體内溫度分 布之影響。因此可使陶瓷體内溫度之分布更一致，且可易 於使保持於陶瓷體上工件内溫度之分布一致。 在按照本發明第二方面之工件支持器内，在圍繞該電路 與電源供應導電構件間各連接部分位於其中之區域内之環 境最好為真空或非氧化之環境。 在此情形下，在電源供應導電構件及該電路與電源供應 導電構件間各連接部分之氧化可有效加以防止。 在按照本發明第二方面之工件支持器内，從連接部分位 於其中之區域向其他區域之氦漏洩率最好是1CT8 Pa*m3/s或 更小。 在此情形下，上述區域之氦漏洩率設定在上述值時，能 -12 - 1275157 確切抑制電源供應導電 間各連接部分之氧化。 構件及該電路與電源 供應導電構件 瓷H!:弟-万面之工件支持器可更包括-提供於陶 瓦眼丹贫封構件間接合部分處之接合構件。 :此:青形下，在陶资體與密封構件間接合部分内之間隙 可被雜合構件填起。因而可改善上述接合 性。於是該電路與電源供應導電構件間各連接部分 中之區域可確實與圍繞密封構件之區域隔開。 - =按照本發明第-或第二方面之工件支持器中，可透過 構件對—種接合材料施加—⑽細2或更大之壓力進 行熱處理而形成該接合構件。 在此情形下，因可減少接合構件中小間隙之數目，可庐 得有極佳氣密度之接合部分。於是從被密封構件、管狀ς 件、及陶㈣所包圍區域至該電路與電源供應導電構件間 連接部=位於其中之其他區域之氦料率可減小（亦即可 改善氣密度）。此外，在管狀構件與密封構件間接合部分及 在陶瓷體與密封構件間接合部分之接合力可增大。因而可 獲更可罪足接合邵分。將施加至接合材料之壓力設定在 g/cm2或更大之理由是若壓力在1〇〇 g/cm2或更大時可減小 氦漏洩率，而若壓力小於100 g/cm2則很難減小氦漏洩率。 此外，在此情形下，接合材料可含有玻璃。此一含玻璃 之接合材料可藉事先點火而形成與接合構件大致相同之形 狀。接著將預先加熱之接合材料置於一預定位置並加以熱 處理。於疋可很容易在接合部分完成接合及密封。 •13- 1275157 在按照本發明第二方面之工件支持器中，該接合構件有 一表面從陶瓷體背面之一部分伸至密封構件表面之一部 分，而該接合構件之表面最好為一凹入彎月形。 在上述情形下，當該接合構件如上述形成一所謂之彎月 形時，應暸解該接合構件對密封構件及陶瓷體之表面有良 好之可浸潤性。亦即，當該接合構件有凹入彎月形時，接 合部分即有高氣密度。因而可確實防止在接合部分發生漏 淺。 在按照本發明第一或第二方面之工件支持器中，該接合 構件可包括玻璃。 當一種陶瓷材料用於接合構件時，在於接合部分形成接 合構件之處理中，熱處理之溫要增至1，500°C或更高。在此 一處理中，當密封構件及電源供應導電構件事先被接合於 一起時，必須用能耐1，500°C或更高高溫之材料來形成電源 供應導電構件。因此能用於形成電源供應導電構件之材料 非常有限。 相較之下，當玻璃用於接合構件時，在接合部分形成接 合構件之熱處理溫度可降至一較低溫度（約1，〇〇〇 °c或更 低）。因而增大為電源供應導電構件選擇材料之自由。 在密封構件或管狀構件是以陶瓷形成之情形下，若用一 種金屬銅銲材料做為標準接合構件時，因陶瓷之熱膨脹係 數小於金屬銅銲材料或類似材料，熱循環或類似情形所造 成之熱應力會集中在接合部分。因此若為接合構件選擇適 當種類之玻璃時，可使接合構件之熱膨脹係數大約相當於 • 14- 1275157 形成管狀構件或類似物陶瓷之熱膨脹係數。如此可抑制熱 應力在接合部分之集中。從而可抑制熱應力所造成接合部 分之斷裂，從而可獲得有高可靠性之工件支持器。 在按照本發明第一或第二方面之工件支持器中，可包括 提供之另一接合構件，接合密封構件與電源供應導電構件 之部分可在其間提供一附加接合構件。該附加接合構件有 一表面從密封構件表面之一部分伸至電源供應導電構件表 面之一部分，且該接合構件表面最妤為一凹入彎月形。 當該附加接合構件如上所述形成一彎月形時，應暸解該 接合構件對該密封構件及該電源供應導電構件之表面有良 好之浸潤性。亦即，當該附加接合構件如上述有彎月形狀 時，在密封構件及電源供應導電構件間之接合部分即有高 氣密度。因此，可有效防止該接合部分發生漏洩。 在按照本發明第一或第二方面之工件支持器中，該附加 接合構件可包括玻璃。 在此情形下，當用玻璃做為該附加接合構件之接合材料 時，在密封構件與電源供應導電構件間之接合部分處形成 該接合構件所用之熱處理可在較低溫度下（約l，〇〇〇°C或更 低）進行。因而增大為電源供應導電構件選擇材料之自由。 在按照本發明第一或第二方面之工件支持器中，該玻璃 可為ZnO-Si〇2-B2〇3基玻璃。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a support for fasting a material such as a wafer that is processed in a processing device such as a semiconductor manufacturing device (hereinafter referred to as a workpiece holder or pedestal), and a processing device using the holder. More particularly, the present invention relates to a workpiece holder having excellent reliability for thermal cycling and a processing apparatus having the workpiece holder. [Prior Art] Up to now, in the manufacturing steps of the semiconductor device, the formation of the thin film or the etching treatment is performed on the workpiece, that is, on the semiconductor substrate. The processing apparatus for processing a remote substrate has a susceptor which is a holder for holding a semiconductor substrate in semiconductor substrate processing. A conventional pedestal of the pedestal is disclosed in Japanese Unexamined Patent Application Publication No. No. No. 7,153,706. However, the above-described pedestal of the conventional type has the following problems. That is, to supply an inertial gas in a support table, a gas supply pipe must be provided for the susceptor, and a device for supplying inertia gas, such as a mass flow controller, must be connected to the gas supply pipe. Therefore, the structure of the susceptor is complicated to increase the manufacturing cost of the susceptor used as the workpiece holder. Furthermore, the use of such a pedestal also increases the operating cost of the susceptor because it must always supply inert gas to the support. SUMMARY OF THE INVENTION An object of the present invention is to provide a (4) inexpensive workpiece holder which can achieve high reliability by avoiding damage caused by a reaction gas, and a processing apparatus having the workpiece supporting 1275157. The workpiece holder of the present invention comprises: a ceramic body having a circuit and capable of supporting a workpiece; a tubular member fixed to an end portion (first end portion) of the back surface of the ceramic body; and being disposed in the tubular member and a sealing member that joins and divides a space in the tubular member into two regions; a region on the edge of the first end portion (sealing region) and a region on the opposite edge (opposite region); and a relative region Extendingly extending through the sealing member to the sealing region and electrically connected to the power supply conductive member of the circuit on the ceramic body. The processing apparatus of the present invention has the above-described workpiece holder. The susceptor used in the semiconductor manufacturing apparatus is resistant to severe processing conditions such as etching treatment on a semiconductor substrate, and the pedestal is not necessarily inexpensive. The use of the workpiece holder of the present invention provides an inexpensive susceptor for use in semiconductor manufacturing equipment that is extremely resistant to such severe processing conditions. In the workpiece holder of the present invention, since the sealing member is placed in and engaged with the tubular member supporting the ceramic body, the connecting portion for the ceramic body circuit is connected to the power supply conductive member and can be connected to the environment around the workpiece holder Separated. Therefore, with the workpiece holder of the present invention for processing a workpiece such as a substrate, it is possible to prevent the connection portion from being damaged by oxygen contained in the air in the tubular member. Therefore, it is not necessary to supply inertial gas to the space inside the tubular member as described above in order to avoid damage of the joint portion. This reduces the cost of the workpiece holder. [Embodiment] A workpiece holder according to a first aspect of the present invention includes: a ceramic body having a circuit for supporting a workpiece; and a tubular member having an end portion (the first end portion 1275157 portion) joined to the ceramic body; a sealing member disposed within the tubular member and engaging the space therein and partitioning a space within the tubular member into two regions: a region on the first end of the spin edge (sealing zone); and a side on the opposite side a region (opposing region); and a power supply conductive member that penetrates from the opposite region to the sealing portion, penetrates the sealing member, and is electrically connected to the circuit. The circuit within the ceramic body includes a heater circuit for heating the workpiece, an electrostatic electrode holding a workpiece on the ceramic body, or an RF electrode for generating plasma. The material for forming such a circuit may be tungsten or platinum having a low oxidation resistance. Further, a material having a low oxidation resistance is also used in some cases for a power supply joint at a connection portion between the circuit and the power supply conductive member. Therefore, if the connection portion between the power supply conductive member and the circuit is in the air, the circuit exposed in the tubular member may be etched when the workpiece holder is heated and the semiconductor substrate or the like placed thereon is etched Corroded by oxygen present in the air. According to the present invention, however, the connecting portion for the ceramic body and the power supply member is located in a region surrounded by the sealing member, the tubular member and the ceramic body (i.e., the above-mentioned sealing portion). If a predetermined gas density is formed between the tubular member and the ceramic body and the joint portion between the sealing member and the ceramic body, the portion (the sealing portion) in which the connecting portion is located is an empty space surrounded by the sealed portion in the tubular member. On (hereinafter referred to as the enclave). Therefore, when the heat treatment such as etching is performed, the circuit or the material forming the joint portion can be prevented from being corroded by the oxygen present in the environment inside the tubular member. Further, as described above, since the sealing member is placed in the tubular member to separate the sealing portion from the surrounding portion, it is not necessary to provide a means for supplying inert gas to the tubular member of 1275157 as provided in the conventional apparatus. Therefore, the structure of the workpiece holder can be simplified and the manufacturing cost thereof can be reduced. Further, when a workpiece is processed by the workpiece holder, it is not necessary to continuously supply inert gas to the tubular member, thereby reducing the running cost of processing using the above-described workpiece holder. Furthermore, in order to constitute the ceramic body, the tubular member, the sealing member, and the power supply conductive member constituting the workpiece holder, materials having a proper thermal expansion coefficient which are not greatly different from each other can be selected to avoid local thermal stress such as local temperature change. Concentration issues. Thus, a highly reliable workpiece holder capable of coping with thermal hysteresis caused by thermal cycling can be obtained. In the workpiece holder according to the first aspect of the invention, the sealing member is preferably capable of coming into contact with the back surface of the ceramic body (the opposite side to which the wafer is to be mounted). Further, in the workpiece holder according to the first aspect of the present invention, the sealing member can be joined to the ceramic body surface 0 by the fixing joint member provided therebetween. In this case, the sealing member itself does not need to have a large force because the ceramic body The sealing member can be supported. Thus, the thickness of the sealing member can be reduced. Thus, the degree of freedom in designing the sealing member can be made large. In the workpiece holder according to the first aspect of the invention, the fixing joint member can be formed by applying a pressure of 100 g/cm2 or more through the sealing member to heat the fixing joining material. Therefore, the number of small gaps in the fixed joint member is reduced, so that the joint portion having an excellent gas density can be obtained. Further, the bonding force between the ceramic body and the sealing member can be simultaneously increased. The reason why the pressure applied to the fixed joint member is set to 100 g/cm 2 or more is to increase the airtight property of the fixed joint member when the pressure is 100 g/cm 2 or more, and when the pressure is less than 100 g/cm 2 . The advantage of increasing the gas density cannot be obtained at the time. In the workpiece holder according to the first aspect of the invention, the sealing member may be placed at a distance from the surface of the ceramic body. In this case, the temperature distribution of the ceramic body can be prevented because the sealing member does not come into contact with the ceramic body. Then, the contact between the sealing member and the ceramic body becomes uneven due to contact with the sealing member. As a result, the temperature distribution in the ceramic body can be made more uniform, and thus it is easy to make the temperature distribution in the workpiece held on the ceramic body uniform. In the workpiece holder according to the first aspect of the invention, the region surrounded by the sealing member, the tubular member and the ceramic body may be a vacuum or a non-oxidizing environment. If so, the oxidation of the power supply conductive member and the power supply conductive member and the connection portion between the circuits in the region can be effectively prevented. In the workpiece holder according to the first aspect of the present invention, the leak rate from the region surrounded by the sealing member, the tubular member, and the ceramic body to other regions may be 10·8 Pa, m3/s or less. If so, when the helium leak rate in the seal region is set to a value within the above range, the oxidation of the portion of the power supply conductive member and the portion between the circuit and the power supply conductive member in the region can be prevented. The workpiece holder according to the first aspect of the present invention may further comprise an engaging member provided at the joint portion between the tubular member and the sealing member. If so, the gap at the joint portion between the tubular member and the sealing member can be filled by the joint member. Therefore, the gas density of the above joint portion can be improved. The first zone within the tubular member can then be isolated from the outer zone surrounding one of the workpiece holders 1275157. In the workpiece holder according to the first aspect of the present invention, the engaging member may have a surface extending from a portion of the inner surface of the tubular member to a portion of the surface of the sealing member, and the surface of the engaging member is preferably an IHJ into a meniscus shape. When the joint member has the above shape (so-called meniscus shape), it is understood that the joint member has good wettability to the surfaces of the seal member and the tubular member. That is, when the engaging member has the concave meniscus shape, the joint portion has a high gas density. Therefore, it is possible to surely suppress the occurrence of leakage at the joint portion. A workpiece holder according to a second aspect of the present invention includes a ceramic body having a circuit for supporting a workpiece; a tubular member having an end portion fixed to the back surface of the ceramic body; and a power supply conductively connected to the circuit located in the tubular member a member; and a sealing member disposed in the tubular member and fixed to the back surface of the ceramic body, which forms a plurality of sealed portions respectively surrounding the connecting portions and the sealing member surrounds the sealed portion of the connecting portion and the outside of the sealing member Separated by the surrounding environment. Thus, the connecting portions between the circuit and the power supply conductive member in the ceramic body are located in a region surrounded by the sealing member and the ceramic body. When the sealing member forms a joint zone with the ceramic body and has a predetermined gas density, the region in which the connecting portions are located is spatially spaced from one of the surrounding sealing members. Therefore, it is possible to prevent the occurrence of the problem that the circuit or the material forming the connecting portions is corroded by oxygen existing in the air in the tubular member when the heat treatment such as etching is performed. Further, since the sealing member is placed in the tubular member and the above-mentioned connecting portion is spaced (sealed) from the region surrounding the sealing member, it is not necessary to install an instrument for supplying inertia 1275157 gas into the tubular member. Therefore, the structure of the workpiece holder can be simplified and thus the manufacturing cost thereof can be reduced. Further, when the workpiece is processed (etched or the like) by the workpiece holder, it is not necessary to supply the inertial gas into the tubular member, so that the running cost of processing using the workpiece holder can be reduced. Furthermore, materials having a small difference in thermal expansion coefficient from each other are selected for the ceramic body, the tubular member, the sealing member, and the power supply conductive member constituting the workpiece holder, thereby avoiding problems such as local concentration of thermal stress due to changes in ambient temperature. . Thus, a workpiece holder having high reliability such as thermal history of thermal cycle can be realized. Further, as described above, since the sealing member is separately provided as a connecting portion between the circuit and the power supply conductive member, the size of each sealing member can be reduced. Thus, the cost of the sealing member can be reduced. In addition, since the area in which the sealing member contacts the ceramic body is reduced, the influence of the sealing member on the temperature distribution in the ceramic body can be reduced. Therefore, the temperature distribution in the ceramic body can be made more uniform, and the distribution of the temperature in the workpiece held on the ceramic body can be easily made uniform. In the workpiece holder according to the second aspect of the present invention, the environment in which the connection portion between the circuit and the power supply conductive member is located is preferably a vacuum or a non-oxidizing environment. In this case, oxidation of the connection portion between the power supply conductive member and the circuit and the power supply conductive member can be effectively prevented. In the workpiece holder according to the second aspect of the invention, the leak rate from the region in which the connecting portion is located to the other region is preferably 1 CT8 Pa*m3/s or less. In this case, when the helium leak rate of the above region is set to the above value, -12 - 1275157 can surely suppress the oxidation of each connection portion between the power supply and the conduction. The component and the circuit and the power supply conductive member Porcelain H!: The brother-millimeter workpiece holder may further include an engaging member provided at the joint portion between the tiling and the oolitic member. : This: Under the cyan shape, the gap in the joint between the ceramic body and the sealing member can be filled by the hybrid member. Therefore, the above bonding property can be improved. The area in each of the connecting portions between the circuit and the power supply conductive member can then be surely separated from the area surrounding the sealing member. - In the workpiece holder according to the first or second aspect of the present invention, the joint member is formed by heat-treating a pressure of (2) fine or greater by a member to the joint material. In this case, since the number of small gaps in the joint member can be reduced, the joint portion having an excellent gas density can be obtained. Thus, the ratio of the junction between the sealed member, the tubular member, and the ceramic (four) to the connection between the circuit and the power supply conductive member = other regions located therein can be reduced (i.e., the gas density can be improved). Further, the joint force between the joint portion between the tubular member and the seal member and the joint portion between the ceramic body and the seal member can be increased. Therefore, a more guilty foot can be obtained. The reason why the pressure applied to the bonding material is set to g/cm 2 or more is that the leak rate can be reduced if the pressure is 1 〇〇g/cm 2 or more, and it is difficult to reduce the pressure if the pressure is less than 100 g/cm 2 . Otaru leak rate. Further, in this case, the bonding material may contain glass. The glass-containing joining material can be formed into substantially the same shape as the joining member by prior ignition. The preheated joining material is then placed in a predetermined position and heat treated. Yu can easily join and seal at the joint. • 13 to 1275157, in the workpiece holder according to the second aspect of the present invention, the joining member has a surface extending from a portion of the back surface of the ceramic body to a portion of the surface of the sealing member, and the surface of the joining member is preferably a concave meniscus shape. In the above case, when the joint member is formed into a so-called meniscus as described above, it is understood that the joint member has good wettability to the surfaces of the seal member and the ceramic body. That is, when the joint member has a concave meniscus shape, the joint portion has a high gas density. Therefore, it is possible to surely prevent the occurrence of light leakage at the joint portion. In the workpiece holder according to the first or second aspect of the invention, the joint member may comprise glass. When a ceramic material is used for the joint member, the temperature of the heat treatment is increased to 1,500 ° C or higher in the process of forming the joint member by the joint portion. In this process, when the sealing member and the power supply conductive member are previously joined together, it is necessary to form the power supply conductive member with a material capable of withstanding a high temperature of 1,500 ° C or higher. Therefore, materials that can be used to form a power supply conductive member are very limited. In contrast, when the glass is used for joining the members, the heat treatment temperature at which the joint members are formed at the joint portion can be lowered to a lower temperature (about 1, 〇〇〇 ° C or lower). This increases the freedom to select materials for the power supply conductive members. In the case where the sealing member or the tubular member is formed of ceramic, if a metal brazing material is used as the standard joining member, the coefficient of thermal expansion of the ceramic is less than that of the metal brazing material or the like, thermal cycling or the like. Thermal stress is concentrated in the joint portion. Therefore, if a suitable type of glass is selected for the joint member, the coefficient of thermal expansion of the joint member can be made approximately equivalent to the thermal expansion coefficient of the tubular member or the like ceramic. This suppresses the concentration of thermal stress in the joint portion. Thereby, the fracture of the joint portion caused by the thermal stress can be suppressed, so that the workpiece holder having high reliability can be obtained. In the workpiece holder according to the first or second aspect of the present invention, the other engaging member may be provided, and the portion of the joint sealing member and the power supply conductive member may provide an additional joint member therebetween. The additional engaging member has a surface extending from a portion of the surface of the sealing member to a portion of the surface of the power supply conductive member, and the surface of the engaging member is most concave into a meniscus shape. When the additional joint member is formed into a meniscus shape as described above, it is understood that the joint member has a good wettability to the surface of the seal member and the power supply conductive member. That is, when the additional joint member has a meniscus shape as described above, the joint portion between the seal member and the power supply conductive member has a high gas density. Therefore, leakage of the joint portion can be effectively prevented. In the workpiece holder according to the first or second aspect of the invention, the additional joint member may comprise glass. In this case, when glass is used as the bonding material of the additional bonding member, the heat treatment for forming the bonding member at the joint portion between the sealing member and the power supply conductive member can be performed at a lower temperature (about 1, 〇 〇〇°C or lower). This increases the freedom to select materials for the power supply conductive members. In the workpiece holder according to the first or second aspect of the invention, the glass may be ZnO-Si〇2-B2〇3-based glass.

Zn〇-Si〇2-B2〇3基玻璃之熱膨脹係數相當於陶瓷之熱膨 脹係數，且此種玻璃對陶瓷所製之管狀構件及密封構件有 良好之可浸潤性。若以Zn〇-Si〇2-B2〇3基玻璃用為接合構件 -15 - 1275157 時可改善接合部分之氣密度及可靠性。 在按照本發明第一或 槿侔α 万面炙工件支持器中，該密封 構件可包括相當於^管狀構件之材料。 在此情形下，密封構件 數之材料製成。因此，衫可 同熱膨服係 處可抑制因形成密封構件二=狀構件間接合部分 數所造成之熱應力集中。件材料之不同熱膨服係 改盖〇 、疋上述接合邵分之可靠性可予 在按照本發明第一或第_ 面之工件支持器中，該密封 構件可包括一種相备於 4 田；7成孩陶瓷體之材料。 在此情形下，密封構# 之材料制 及陶瓮骹可用有相同熱膨脹係數 义材科製成。因此，在宓射 # ,,, s ^ . *封構件與陶瓷體間接合部分處可 抑制因形成密封構件與陶 士、士為由丄 定把材科<不同熱膨脹係數所造 成《熱應力集中。於是± ^ 在按照本發明第-或第…可罪性可予改善。 體可包括氮化銘。 万面之工件支持器中，該" 氮化鋁對用以處理半導 ..^ 争^基板义鹵氣有高度抗腐蝕性。 此外’鼠化鋁所製陶瓷體、 ^ ^ ^ ^ 1子屋生率小於除氮化鋁外之 材料所製者之粒子產生率。 _ ^ ^ ^ 再者’因氮化鋁之導熱性較高， 可使陶t： 表面上（其上 .^.^ x I有諸如一半導體基板工件之 表面）疋熱分布一致。 τ 在按照本發明第一.第- 供應導電構件可工件支持器中’該電源 丁 J a括一種鐵_鎳_鈷合金。 在上述鐵-鎳^姑合金盘陶、 、Ί是間义熱膨脹係數差較小。因而 • 16 · 1275157 當形成電源供應導電構件與密封構㈣接合部分時及當該 工件支持器經熱循環時’在電源供應導電構件與密封構件 間接合邵分處所產生之熱應力可減小。 此外’上述鐵-鎳-鈷合金對用於接合構件之玻璃有極佳可 浸潤力。因而可改善該電源供應導電構件與該密封構件間 接合部分之可靠性。 在按照本發明第一或第二方面之工件支持器中，該電源 供應導電構件可包括_基底材料及—塗層。該基底材料可 含有選自包括鎢、鉬與彼等合金中之至少一種。塗層則可 形成於該基底材料之表面上且可含有鎳與金中之至少一 種。此外，該塗層可為含有鎳及金中至少一種之鍍層。 在此^形下，形成基底材料之諸如鎢金屬之抗氧化力並 不特別優異，但在電源供應導電構件上施加—含有錄或金 之塗層可改善其抗氧化力。此外，上述形成基底之材料為 -種熱膨脹係數較低之金屬。因此當將電源供應導電構件 與密封構件接合起之處理中有熱施加至該接合部分 時，可減小因而產生之熱應力。 按照本發明第三方面之—種處理裝置包括按照本發明第 一或第二方面之工件支持器。 使用上述成本較為合理之高度可靠工件支持器可製造一 種高度可靠之處理裝置在其中可用低成本來處理諸如基板 之工件。 用於半導體製造裝置中之基座須以合理成本製造且能耐 得住諸如在半導體基板蝕刻處理中之嚴苛狀況。本發明之 -17- 1275157 工件支持器製造成本低且舎匕+ 匕且此耐仔住用於在半導體製造裝置 中之嚴苛作業狀況。 實例 下面將+照圖式說明本發明之實例。在下面之圖式中相 同或同等之構成71件以相同之符號指示且不再重複說明。 第一實例 圖1為按照本發明第—眘点丨m、λ . 如月罘貫例用於一處理裝置中工件支持 器之斷面圖。圖2AH1吣-Y AL丄k 口為圖1所不工件支持器一部分之放大斷面 圖圖3為圖1所不工件支持器與圖2所示不同部分之放大斷 面圖。現參看圖⑴對本發明第一實例之支持器加以說明。 。圖1至3所示為置於一處理裝置之小室中用做底座之一支 持i括陶瓷體2及一接合至陶瓷體2背面邊之管狀 構件6。、該管狀構件6是以陶究製成。支持μ是在管狀構件 6底#接口 土该至《壁表面(未示出該處理裝置可用為製 造半導體基板步驟巾諸如㈣裝置或薄膜形成裝置之半導 體製造裝置。 陶资體2在其表面上保持一諸如半導體基板之工件。陶资 體2包括-陶瓷製之體基底3及埋入體基底3中包括電極4及 加熱電路5在内之一些電路。電極4可為一將諸如一基板之 工件保持於陶资體2表面上之抗靜電電極或為-用於處理 基板時產生電漿之電漿產生射頻電極。此外，抗靜電電極 及電漿產生電極均可形成於陶瓷體2中。 供私接頭7a至7C連接至電極4之電路及加熱電路5。這些 供電接頭7a至7e是以諸如金屬之導電材料所製且埋入陶资 -18- 1275157 體2中。供電接頭7a至7c每個之一端在管狀構件6内陶究體] 之表面處露出。用做電源供應導電構件6之接頭邊電極線8 與對應之供電接頭7a至7c接觸。該等接頭邊電極8在連接部 分1〇以金銲材料丨7連接至對應之電源邊電極線9。可用鎳做 為電源邊電極線9之材料。在接頭邊電極線8與電源邊電極 線9間可用螺絲旋入結構做為接頭結構。例如，在接頭邊電 極線8之—末端部分形成一螺紋部分，並在電源邊電極線9 < 一末端形成一該螺紋部分***及固定於其中之螺紋孔， 該末端部分與該接頭邊電極線8相對。接下來可將螺紋部分 ***螺纹孔並旋緊而使接頭邊電極線8與電源邊電極線9連 接並固定於一起。 在接4邊電極線8與電源邊電極線9間之連接部分中， =圖2所示，在電源邊電極線9末端部分中形成末端開口部 刀 接4邊電極線8之末端部分（與連接至供電接頭7a至 =末端相對之末端部分）***人這些對應之末端開口部分 上述之h形，該金銲材料17被填入該等末端開口 部分1 5中。 、卜在$狀構件6内有一陶瓷製之密封構件丨丨放置在位 =頭邊=線8與電源邊電極線9間連接部分H)上方-區 、在汁劃圖中該密封構件11之形狀為大約相當於朝著 外，件6延伸万向垂直方向之管狀構件之内周邊。此 、、封構件11内形成複數個開口 12。接頭邊電極線8則 放置成通過這些開口 12。 接^邊電極線8與密封構件11在開口 12處以-附加之接 -19- 1275157 合構件用玻璃1 3固定於一却 ,. 、。麵13職填料為接合部 刀（開口以逸、封材料而使被管狀構件6所圍繞之_ 區（在管狀構件6中第一支被却八、直^ ^ . 弟末响邓分邊内之一空間）、密封構件 11及陶究體2均被該穷每媒义·，Α、、 ^ 对疋興弁他區域（與管狀構件 6中該密封區相對之相對區及圍繞支持器！外周邊之夕卜 隔開。此外’密封構件U與管狀構件6以用為一接合構件之 玻璃13互相接合並固定H因而密封構件η可將管狀 構件6内之密封區與管狀構件内相料該密封區之相對區 隔開。再者，用做電源供廯 私原仏應導電構件（接頭邊電極線8從該 相對區伸出透過開口 12穿過密封構件u而至管狀構件6内 之該密封區且透過該供電接頭73至7(:連接至電極4及加散 電路5。 位於密封構件11與接頭邊電極線8間接合部分之玻璃13 及位於密封構件11與管狀構件6間接合部分之玻璃13形成 弓月形4刀14。上述之彎月形部分14是在玻璃丨^對密封構 件11、接頭邊電極線8及管狀構件6表面之可浸潤力最佳時 所形成。當彎月形部分14如上述情形形成時，接合部分即 有高度可靠性且不大可能發生漏洩。 位於密封構件11與接頭邊電極線8間接合部分之玻璃13 及位於密封構件11與管狀構件6間接合部分之玻璃13可藉 透過密封構件11對玻璃13施加一 100 g/cm24更大壓力之熱 處理來形成。按照該項處理，玻璃13中之小間隙數目可減 少。因而除改善氣密特性外，含有玻璃13之接合部分之接 合力亦可改善。 1275157 -種低抗氧化力之材料，諸如轉或銷，被用為形成加熱 電路5或電極4之材科。同浐岫 门铋也在某些情形下用低抗氧化材 料製造供電接頭7d7c。在本發明之支持器^，陶㈣2 之接頭邊電極線8與加熱電路5或類似物之俣電接頭間之連 接部分是位於被密封構件U、管狀構件6及陶资體2所包圍 之密封區内(管狀構件第一末端部分邊之區域因此，若管 狀構件6與陶資體2間之接合區、管狀構件6與密封構件_ 之接合區及密封構件11與接頭邊電極線8間之接合區被形 成而使得有預定之氣密度時，接頭邊電極”與用於加散電 路5及類似物之供電接頭7間之連接部分位於其中之區域即 繞支持^之環境（其他W 1而當進行諸如 h理時可防止發生各連接部分及料加熱電路$及電 極4之供電接頭7被存在於 所腐蝕。 持」周_境中之反應氣體 。此外，因密封構件u是置於管狀構件6内而使上述之第一 :二：即在官狀構件6中第—末端部分邊之區域，與除上述 槿杜區外《區域^開’在過去曾用於供應慣性氣體至管狀 16中之器具已無需要。因支持器1之結構較之過去已予 製造成本可以減少。此外，當半導体基板，亦即— ::，用支持器1加以處理時(姓刻或類似處理)，不必再繼 性氣体至管狀構件6中’因而使用支持器1可減少 :者，若選擇熱膨脹係數相差不大之適當材料做為 持器1之陶受體2、管狀構件6、密封構件U及接頭邊電極 -21 - 1275157 之材料，可抑制發生因環境溫度改變所造成熱應力局部 集中之問題。於是可獲得對目熱循環所造成熱 可靠性之支持器1。 在圖1至3所示之支持器}中，因密封構件u是置於離陶党 體&表面有一❹巨離處，t封構件u並未與之接觸。於是 可防止發生因密封構件U與陶瓷體2接觸而使陶瓷俨2中加 度分布不均勾之問題。因此可進一步改陶逢體2中溫；分: 之一致性。 因用做接合構件之玻璃13是提供在管狀構件6與密封構 件11間之接合部分，密封構件狀構件6間之間隙可由 玻瑪13填起。因此可改善上述接合部分之氣密特性。 此外，因玻璃13之觸脹係數較金銲材料或類似物者為 低，若從各種材料中選擇適當類型玻璃U用於接合構件’ 可使玻璃U之膨㈣數大致相#㈣成f狀構件6之陶t 者。於是可抑制接合部分熱應力之集中。 如圖3所示，玻璃13有—表面從管狀構件味面之一部《 伸至密封構件U表面之—部分，且該玻璃有-凹入斷面, 狀（形成所謂之彎月形部分14)。 I刀14)上逑<彎月形部分14是當s 璃13對管狀構件6及密封構 > 傅1干1 i又表面有艮好可浸潤性限 而形成。亦即，當接合構件右 、 傅1干哥凹入.考月形時，該接合 即有南氣密度。 ’ 此外’在圖1至3所示之古括哭、 支持备1中，玻璃13是在密封構^ 11與接頭邊電極線8間之接 〜狡口 4分k供為一附加接合j 件。如圖2所示，玻璃I]古 ^ 圾塥13有一表面從密封構件11表面之一1 -22- 1275157 分伸至接頭邊電極線8表面之一部分，且玻璃13之表面為一 凹入彎月形（形成一彎月形部分14)。當上述彎月形部分14 形成於玻璃1 3表面上時，應暸解玻璃1 3對密封構件丨丨及接 頭邊電極線S之表面有良好可浸潤性。亦即，當形成上述彎 月形邵分14時，密封構件11與接頭邊電極線8間之接合部分 即有高度氣密特性。此外，當玻璃13被用為該另一接合構 件時，可用較低溫度（約l5〇0(rc或更低）在密封構件u與接 頭邊電極線8間之接合部分進行提供玻璃13之熱處理步 驟。因而可使選擇形成接頭邊電極線8之材料有更大自由。 可能用ZnO-SiCVB2。3-基玻璃做為玻璃13。Zn〇_Si〇2_B2〇^ 基玻璃 < 熱膨脹係數相當於陶瓷之熱膨脹係數且對陶瓷所 製之管狀構件6及密封構件丨丨有極佳可浸潤性。所以若用The thermal expansion coefficient of the Zn〇-Si〇2-B2〇3 based glass corresponds to the thermal expansion coefficient of the ceramic, and the glass has good wettability to the tubular member and the sealing member made of ceramic. When Zn〇-Si〇2-B2〇3 based glass is used as the joining member -15 - 1275157, the gas density and reliability of the joined portion can be improved. In the first or 槿侔α 炙 炙 workpiece holder according to the present invention, the sealing member may comprise a material equivalent to the tubular member. In this case, the number of sealing members is made of a material. Therefore, the thermal expansion of the shirt can be suppressed by the number of joints between the two members of the sealing member. The reliability of the above-mentioned joints may be different in the workpiece holder according to the first or the first aspect of the present invention, and the sealing member may comprise a phase in the field; 70% of the material of the ceramic body. In this case, the material of the seal structure and the pottery can be made of the same thermal expansion coefficient. Therefore, in the #射#,,, s ^. * The joint between the sealing member and the ceramic body can suppress the thermal stress caused by the different thermal expansion coefficients caused by the formation of the sealing member and the pottery and the stone. concentrated. Thus, ± ^ can be improved in accordance with the first or third sinfulness of the present invention. The body can include nitriding. In the workpiece support of the 10,000-sided workpiece, the aluminum nitride pair is highly resistant to the treatment of the semi-conducting .. In addition, the ceramic body made of the ratified aluminum has a particle generation rate of ^ ^ ^ ^ 1 sub-house rate smaller than that of the material other than aluminum nitride. _ ^ ^ ^ Furthermore, because of the high thermal conductivity of aluminum nitride, the heat distribution of the surface of the ceramic (the surface of the workpiece such as a semiconductor substrate) is uniform. τ In the first.-supply conductive member workable workpiece holder according to the present invention, the power source includes an iron-nickel-cobalt alloy. In the above iron-nickel alloy, the difference in thermal expansion coefficient is small. Thus, 16 · 1275157 can reduce the thermal stress generated when the power supply conductive member and the sealing member (4) are joined, and when the workpiece holder is thermally cycled, the joint between the power supply conductive member and the sealing member is joined. Further, the above iron-nickel-cobalt alloy has excellent wettability to the glass used for the joint member. Therefore, the reliability of the joint portion between the power supply conductive member and the sealing member can be improved. In the workpiece holder according to the first or second aspect of the invention, the power supply conductive member may include a base material and a coating. The base material may contain at least one selected from the group consisting of tungsten, molybdenum and alloys thereof. A coating layer may be formed on the surface of the base material and may contain at least one of nickel and gold. Further, the coating may be a plating layer containing at least one of nickel and gold. In this case, the oxidation resistance of the base material such as tungsten metal is not particularly excellent, but application of a coating containing gold or gold on the power supply conductive member improves the oxidation resistance. Further, the material forming the substrate described above is a metal having a low coefficient of thermal expansion. Therefore, when heat is applied to the joint portion in the process of joining the power supply conductive member and the seal member, the thermal stress thus generated can be reduced. A processing apparatus according to a third aspect of the present invention comprises the workpiece holder according to the first or second aspect of the invention. The use of a highly reliable, highly reliable workpiece holder as described above produces a highly reliable processing apparatus in which workpieces such as substrates can be processed at low cost. The susceptor used in the semiconductor manufacturing apparatus must be manufactured at a reasonable cost and can withstand the severe conditions such as in the etching process of the semiconductor substrate. The -17-1275157 workpiece holder of the present invention is low in manufacturing cost and 舎匕+ 匕 and is resistant to the harsh working conditions in semiconductor manufacturing equipment. EXAMPLES Examples of the invention will now be described in the following drawings. In the following figures, the same or equivalent components 71 are denoted by the same reference numerals and the description will not be repeated. First Example Figure 1 is a cross-sectional view of a workpiece holder for use in a processing apparatus according to the present invention. Fig. 2AH1吣-Y AL丄k port is an enlarged cross section of a part of the workpiece holder of Fig. 1. Fig. 3 is an enlarged sectional view of the different parts of the workpiece holder of Fig. 1 and Fig. 2. Referring now to Figure (1), the holder of the first example of the present invention will be described. . 1 to 3 show a ceramic member 2 supported by one of the bases and a tubular member 6 joined to the back side of the ceramic body 2 in a chamber of a processing apparatus. The tubular member 6 is made of ceramics. The support μ is at the bottom of the tubular member 6 interface to the "wall surface (the processing device is not shown as a semiconductor manufacturing device for manufacturing a semiconductor substrate step towel such as a device or a film forming device. The ceramic body 2 is on its surface) Holding a workpiece such as a semiconductor substrate, the ceramic body 2 includes a ceramic substrate 3 and a buried circuit substrate 3 including electrodes 4 and a heating circuit 5. The electrode 4 may be a substrate such as a substrate. The antistatic electrode held on the surface of the ceramic body 2 or the plasma generated by the plasma for processing the substrate generates an RF electrode. Further, an antistatic electrode and a plasma generating electrode may be formed in the ceramic body 2. The private joints 7a to 7C are connected to the circuit of the electrode 4 and the heating circuit 5. These power supply joints 7a to 7e are made of a conductive material such as metal and are embedded in the pottery -18-1275157 body 2. Power supply joints 7a to 7c One of the ends is exposed at the surface of the tubular member 6. The joint side electrode wire 8 serving as the power supply conductive member 6 is in contact with the corresponding power supply joints 7a to 7c. The joint side electrodes 8 are in the joint portion. 1〇 The gold bonding material 丨7 is connected to the corresponding power supply side electrode line 9. Nickel can be used as the material of the power supply side electrode line 9. Between the joint side electrode line 8 and the power supply side electrode line 9, a screw can be screwed into the structure as a joint structure. For example, a threaded portion is formed at the end portion of the joint electrode line 8, and a threaded hole into which the threaded portion is inserted and fixed is formed at the end of the power supply side electrode line 9 < the end portion and the joint side The electrode wires 8 are opposed to each other. Next, the threaded portion can be inserted into the screw hole and screwed so that the joint side electrode wire 8 is connected to the power supply side electrode wire 9 and fixed together. Between the 4-sided electrode wire 8 and the power supply electrode wire 9 In the connecting portion, as shown in Fig. 2, the end portion of the end portion of the power supply side electrode line 9 is formed with the end opening portion of the edge electrode line 8 (the end portion opposite to the power supply terminal 7a to the = end). Inserting the corresponding h-shaped portions of the corresponding end opening portions, the gold soldering material 17 is filled into the end opening portions 15. A ceramic sealing member is placed in the $-shaped member 6 and placed in position = Head side = line 8 Power electrode line side connecting portion 9 H) above - zone, designated in FIG juice shape of the seal member 11 is approximately equivalent toward the outer, gimbal member 6 extends outside of the inner tubular member of the vertical direction. In this case, a plurality of openings 12 are formed in the sealing member 11. The joint side electrode wires 8 are placed through these openings 12. The edge electrode line 8 and the sealing member 11 are attached to the opening 12 by an additional -19 - 1275157 member. The surface 13 filler is a joint knife (the opening is surrounded by the tubular member 6 by the opening and sealing material (the first branch in the tubular member 6 is eight, straight ^ ^. One of the spaces), the sealing member 11 and the ceramic body 2 are all in the area of the 疋 弁 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Further, the outer periphery is separated. Further, the 'sealing member U and the tubular member 6 are joined to each other and fixed by the glass 13 used as a joint member. Thus, the sealing member n can feed the sealing portion in the tubular member 6 with the tubular member. The opposite regions of the sealing zone are separated. Further, it is used as a power source for the conductive member (the joint side electrode wire 8 protrudes from the opposite region through the opening 12 through the sealing member u to the tubular member 6 The sealing region passes through the power supply terminals 73 to 7 (: is connected to the electrode 4 and the dissipating circuit 5). The glass 13 located at the joint portion between the sealing member 11 and the joint side electrode line 8 and the bonding between the sealing member 11 and the tubular member 6 Part of the glass 13 forms a bow-shaped 4 knife 14. The above-mentioned meniscus The minute portion 14 is formed when the wettability of the glass member to the surface of the sealing member 11, the joint side electrode line 8, and the tubular member 6 is optimal. When the meniscus portion 14 is formed as described above, the joint portion is highly reliable. The leakage of the glass 13 located at the joint portion between the sealing member 11 and the joint side electrode line 8 and the glass 13 located at the joint portion between the sealing member 11 and the tubular member 6 can be applied to the glass 13 through the sealing member 11. A heat treatment of 100 g/cm 24 or more is formed by heat treatment. According to this treatment, the number of small gaps in the glass 13 can be reduced. Therefore, in addition to the improvement of the airtightness, the joining force of the joint portion containing the glass 13 can be improved. 1275157 - A material with low oxidation resistance, such as a turn or a pin, is used to form the heating circuit 5 or the material of the electrode 4. In the same case, the power supply joint 7d7c is also made of a low oxidation resistant material in some cases. In the support device of the invention, the connection portion between the joint electrode line 8 of the ceramic (4) 2 and the electric contact of the heating circuit 5 or the like is located close to the sealed member U, the tubular member 6 and the ceramic body 2. In the region (the region of the first end portion of the tubular member, therefore, if the joint between the tubular member 6 and the ceramic body 2, the joint portion of the tubular member 6 and the sealing member, and the joint between the sealing member 11 and the joint electrode line 8 When the land is formed such that there is a predetermined gas density, the joint between the joint side electrode and the power supply joint 7 for the add-on circuit 5 and the like is located in the area around the support (other W 1 It is possible to prevent the occurrence of corrosion of the power supply joints 7 of the respective connection portions and the material heating circuit $ and the electrodes 4 when it is carried out, etc. The reaction gas in the "circumferential state" is held. Further, since the sealing member u is placed in the tubular shape The member 6 is internally made to be the first: two: that is, in the region of the first end portion of the official member 6, and in addition to the above-mentioned "dual region", in the past, it was used to supply the inertial gas to the tubular 16 The equipment in the middle is no longer needed. Since the structure of the supporter 1 can be reduced as compared with the past. In addition, when the semiconductor substrate, that is, -:, is processed by the holder 1 (last name or the like), it is not necessary to re-use the gas into the tubular member 6 'so the use of the holder 1 can be reduced: if selected A suitable material having a small difference in thermal expansion coefficient is used as the material of the ceramic receptor 2, the tubular member 6, the sealing member U, and the joint side electrode-21 - 1275157 of the holder 1, and can suppress the local concentration of thermal stress caused by the change of the ambient temperature. The problem. Thus, the holder 1 for the thermal reliability caused by the thermal cycle can be obtained. In the holder shown in Figs. 1 to 3, since the sealing member u is placed at a large distance from the surface of the pottery body & the sealing member u is not in contact therewith. Thus, the problem of uneven distribution of the degree of addition in the ceramic crucible 2 due to the contact of the sealing member U with the ceramic body 2 can be prevented. Therefore, the temperature of the ceramics can be further changed; the consistency of the points: Since the glass 13 serving as the engaging member is provided at the joint portion between the tubular member 6 and the sealing member 11, the gap between the sealing member-like members 6 can be filled by the Boma 13. Therefore, the airtight characteristics of the above joint portion can be improved. In addition, since the coefficient of expansion of the glass 13 is lower than that of the gold-welded material or the like, if a suitable type of glass U is selected from various materials for the joint member, the expansion of the glass U can be made substantially equal to #4. Member 6 of the pottery t. Thus, the concentration of thermal stress in the joint portion can be suppressed. As shown in Fig. 3, the glass 13 has a surface extending from one portion of the tubular member flank to the surface of the sealing member U, and the glass has a concave cross section, forming a so-called meniscus portion 14 ). The I knife 14) upper jaw < meniscus portion 14 is formed when the s glass 13 has a wettable limit on the surface of the tubular member 6 and the sealing structure > That is, when the joining member is right and the squirrel is concave, the joint has a south gas density. In addition, in the ancient crying and supporting device 1 shown in Figs. 1 to 3, the glass 13 is connected between the sealing structure 11 and the joint side electrode line 8 to the mouth 4 minute k for an additional joint j piece. . As shown in Fig. 2, the glass I] has a surface extending from one of the surfaces 1 -22 to 1275157 of the sealing member 11 to a portion of the surface of the joint side electrode line 8, and the surface of the glass 13 is a concave curved surface. Moon shape (forms a meniscus portion 14). When the above meniscus portion 14 is formed on the surface of the glass 13, it is understood that the glass 13 has good wettability to the surfaces of the sealing member 丨丨 and the joint side electrode line S. That is, when the above-described meniscus portion 14 is formed, the joint portion between the sealing member 11 and the joint side electrode line 8 has a high airtight property. Further, when the glass 13 is used as the other joining member, the heat treatment for providing the glass 13 can be performed at a lower temperature (about l5 〇 0 (rc or lower) at the joint portion between the sealing member u and the joint side electrode line 8. Therefore, the material for forming the joint electrode line 8 can be selected to have greater freedom. It is possible to use ZnO-SiCVB2. 3-based glass as the glass 13. Zn〇_Si〇2_B2〇^ base glass < Thermal expansion coefficient equivalent The thermal expansion coefficient of ceramics has excellent wettability to the tubular member 6 and the sealing member made of ceramics.

ZnO-SiC^B^3·基玻璃做為破璃13時，可改善該接合部分之 氣密度及可靠性。 此外，形成抗封構件丨丨之材料可含有與形成管狀構件6相 同之材料。當如此選擇材料時’密封構件u可用其熱膨脹 係數大致相當於管狀構件6熱膨脹係數之材料形成。於是可 防止因㈣構件u與管狀構件6材料間之熱膨脹係數差而 造成在密封構件11與管狀構件6間接合部分之熱應力集中。 -種形成密封構件U之材料可含有用於形成陶瓷體2之 體基底3之相同材料。 在上述情形下，密封構件u與陶资體2可用熱膨服係數互 相大致相當之材料形成。因此，當密封構件㈣陶縮如 下又中本發明第三實例所述支持器！之情形是直接接合於 •23- I275157 瓷體2材料之熱膨脹係數 一起時，可防止因密封構件丨丨與陶 差而使熱應力在接合部分之集中。 硬用於形成陶瓷體2之體 土 — <材料可含有灾n站〇 炎L ’丨ϋ站，對處理半導體基板所 .^When ZnO-SiC^B^3·based glass is used as the glass 13, the gas density and reliability of the joint portion can be improved. Further, the material forming the anti-sealing member 可 may contain the same material as the tubular member 6. When the material is selected as such, the sealing member u can be formed of a material whose thermal expansion coefficient substantially corresponds to the coefficient of thermal expansion of the tubular member 6. Thus, the thermal stress concentration of the joint portion between the sealing member 11 and the tubular member 6 due to the difference in thermal expansion coefficient between the member (u) and the material of the tubular member 6 can be prevented. The material forming the sealing member U may contain the same material for forming the body substrate 3 of the ceramic body 2. In the above case, the sealing member u and the ceramic body 2 may be formed of a material having substantially the same thermal expansion coefficient. Therefore, when the sealing member (4) is condensed, the holder described in the third example of the present invention is added! In the case where the thermal expansion coefficient of the material of the 23-I275157 ceramic body 2 is directly bonded together, the concentration of thermal stress in the joint portion due to the difference between the sealing member and the ceramic can be prevented. Hard to be used to form the body of the ceramic body 2 - <Materials may contain the n 〇 炎 L L , , , , , , , , , ,

Al M u礼把 < 向抚蝕性。此 外，含氮化銘之陶資體2顯示出有較含其他材料之陶究 低〈粒子產生率。再者，目氮化銘之熱傳㈣數較高，可 使陶瓷體2表面上（其上妾裝右令4 U、上女I育渚如一丰導體基板工件之 面）之溫度分布一致。 此外，被密封構件u、管狀構件6及陶之區 域最好在-真空或非氧化狀態中。在此情形下，可有效抑 制位於上述區域内接頭邊電歸8，或接頭邊電極線s與用 於加熱電路5或電極4之供電接頭間之連接部分發生氧化。 -種離子-鎳-話合金可用於形成接頭邊電極線8之材料。 在此情形下，離子.鎳·鉛合金之熱膨脹係數與㈣者相差不 大。因此，當陶竞所製接頭邊電極線8與密封構件“間之接 合部分被形成及當支持器i經歷熱循環時，可抑制在接薛邊 電極線8與密封構件U間接合部分產生之熱應力。此外，上 述離子-鎳-鈷合金對用為接合構件之破璃有極佳可浸潤 性。因而可改善接頭邊電極線8與密封構件u間接合部分之 可靠性。 用為電源供應導電構件之接頭邊電極線8可包括含有從 鶴、鈿及彼等之合金中所選至少—種之基底材料及一電鍛 層，該電鏡層是形成於該基底材料上且用做含有鎳與金至 少-種之塗層。在此情形下’陶$與上述形成基底材料之 •24· 1275157 金屬間之熱膨脹係數差較小。於是當接頭邊電極線8與密封 構件11間之接合部分形成時，因接頭邊電極線8與密封構件 11間膨脹係數差而在該接合部分產生之熱應力集中可被抑Al M u gift < towards erosive. In addition, the ceramics containing Niobium Ming 2 showed a lower particle yield than the other materials. Furthermore, the number of heat transfer (4) of the nitrite is higher, so that the temperature distribution on the surface of the ceramic body 2 (the surface on which the right armor is 4 U, the upper female I 渚, such as a Fengcong conductor substrate) is uniform. Further, the sealed member u, the tubular member 6 and the ceramic region are preferably in a vacuum or non-oxidized state. In this case, it is possible to effectively suppress the occurrence of oxidation of the joint edge portion 8 located in the above region, or the joint portion between the joint side electrode wire s and the power supply terminal for the heating circuit 5 or the electrode 4. An ion-nickel-alloy alloy can be used to form the material of the joint side electrode line 8. In this case, the thermal expansion coefficient of the ion. nickel-lead alloy is not much different from that of (4). Therefore, when the joint portion between the joint electrode line 8 and the sealing member of the ceramics is formed and when the holder i undergoes thermal cycling, the joint portion between the joint electrode line 8 and the sealing member U can be suppressed. Further, the above-mentioned ion-nickel-cobalt alloy has excellent wettability with respect to the glass used as the joint member, thereby improving the reliability of the joint portion between the joint side electrode wire 8 and the sealing member u. The joint side electrode line 8 of the conductive member may include a base material containing at least one selected from the group consisting of a crane, a crucible, and the like, and an electro forging layer formed on the base material and used as a nickel-containing material At least a coating with gold. In this case, the difference in thermal expansion coefficient between the ceramics and the above-mentioned base material forming the base material is small. Thus, the joint portion between the joint electrode line 8 and the sealing member 11 is used. At the time of formation, the thermal stress concentration generated at the joint portion due to the difference in expansion coefficient between the joint electrode line 8 and the sealing member 11 can be suppressed.

.L I 币!J ° 從密封構件11、管狀構件6及陶瓷體2所包圍之密封區至 其他區之氦漏洩率最好為1〇-8 pa.m3/s或更小。在此情形 下，位於該密封區内之接頭邊電極線8及接頭邊電極線8與 用於加熱電路5及電極4之供電接頭間連接部分之氧化可確 貫被抑制。 當圖1至3所示之支持器丨被用於處理半導體基板之處理 裝置時，可用低成本來處理該半導體基板，除此之外且可 貫現具有高可靠性之處理裝置。 第二實例 圖4為按照本發明第二實例一支持器之斷面圖。現將參照 圖4對本發明第二實例之支持器加以說明。 a如圖4所示，本實例之支持器〗有基本上與圖丨至3所示相 當之結構；但—用以界定密封構件11位置之突出部18形成 於管狀構件6之内壁上。在密封構件u之—末端部分對著此 —突出部18壓下之同時’管狀構件6與密封構件加提供於 其間之玻璃13接合及固定在一起。 按照上述結構，可獲得圖⑴所示支持器！之相同優點， 且同時因有m出部18 ’管狀構件6與密封構件i】相對之區 域可增大。因而可增加管狀構件6與密封構件u間接合部分 之可非性。因此可有效減小漏戍產生率。 -25· 1275157 第三實例 圖5所示為按职太义 ^ — 、、本务明弟三貫例支持器之斷面圖。現將參 圖5對本發明裳一命 J弟二貫例之支持器加以說明。 幽r彳丁 本I例支持器1之結構基本上相當於圖1至3 所述但,密封構件U放置之位置則不同。亦即，密封構 件11是置於管狀構件6内而與陶瓷體2之背面密切接觸。 此外’如此置放之密封構件11是以玻璃13固定至管狀構 件6及接頭邊電極線8。 _按照上述結構可獲得圖1至3所示支持器1同樣之優點且 同寺因4封構件1 1與陶^;體2之背面接觸，陶t體2可保持 密封構件11。因此可減小密封構件u之厚度。於是使得設 計密封構件11有更大自由。.L I coin! J ° The leakage rate from the sealing zone surrounded by the sealing member 11, the tubular member 6 and the ceramic body 2 to other zones is preferably 1 〇 8 pa.m 3 /s or less. In this case, the oxidation of the joint side electrode line 8 and the joint side electrode line 8 located in the seal region and the connection portion between the power supply terminals for the heating circuit 5 and the electrode 4 can be surely suppressed. When the holder 图 shown in Figs. 1 to 3 is used for a processing apparatus for processing a semiconductor substrate, the semiconductor substrate can be processed at a low cost, and in addition to the processing apparatus having high reliability. Second Example Figure 4 is a cross-sectional view of a holder in accordance with a second example of the present invention. The holder of the second example of the present invention will now be described with reference to FIG. As shown in Fig. 4, the holder of the present example has a structure substantially equivalent to that shown in Figs. 3; however, a projection 18 for defining the position of the sealing member 11 is formed on the inner wall of the tubular member 6. While the end portion of the sealing member u is pressed against the projection 18, the tubular member 6 is joined and fixed together with the sealing member and the glass 13 provided therebetween. According to the above structure, the holder shown in Fig. (1) can be obtained! The same advantages are achieved, and at the same time, the area opposite the tubular member 6 and the sealing member i can be increased due to the m-out portion 18'. Therefore, the possibility of the joint portion between the tubular member 6 and the sealing member u can be increased. Therefore, the leakage rate can be effectively reduced. -25· 1275157 The third example Fig. 5 shows a cross-sectional view of the supporter of the three-part case of the Taiyiyi. Referring now to Figure 5, the support of the second embodiment of the present invention will be described. The structure of the holder 1 of this example is substantially equivalent to that described in Figs. 1 to 3, but the position at which the sealing member U is placed is different. That is, the sealing member 11 is placed in the tubular member 6 in close contact with the back surface of the ceramic body 2. Further, the sealing member 11 thus placed is fixed to the tubular member 6 and the joint side electrode line 8 by the glass 13. According to the above configuration, the same advantages as those of the holder 1 shown in Figs. 1 to 3 can be obtained and the sealing member 11 can be held by the ceramic body 2 in contact with the back surface of the body 2 of the body member 1 . Therefore, the thickness of the sealing member u can be reduced. Thus, the design sealing member 11 is made more free.

此外，在上述情形中，提供用為在陶资體2與密封構件U 間-固线合構件之玻璃可將陶$體2與密封構件u接合 於-起。因此可獲得圖4所示支持器i之相同優點。此外， 提供於陶瓷體2與密封構件n間之坡璃可藉透過密封構件 U邊施加知2或更大之壓力所進行之熱處理來形 成。在此情形下，因小間隙可被玻璃除去，在陶资體2與密 封構件U間接合部分之氣密度可改善且除此之外亦可改呈 其接合力。 ϋ 第四實例 為本發明第四實例支持器之斷面圖。圖?為顯示_ 支持器-部分之斷面圖。現參照圖6與7對本發明第四實例 之支持器加以說明。 -26 - 1275157 如圖6與7所示，用做半導體製造裝置基座之支持哭】，立 結構基本上相當於圖5所示者，但密封構件21之結構（見圖 6)則與之不同。亦即’在圖6盘士 ^ 你口 ◦，、/之支持斋1中，密封構件21 是置於管狀構件6内而A m 4 t N丨工川句电妳俣應導電構件之接頭 邊電極線8與諸如電極4及加鼽雨 久加A兒路5 <電路間連接部分之 周邊。密封構件21以坡璃13接人 故喁13接合並固疋至含有氮化鋁之陶 资體2之表面。此外，拉殖、息+ 接〜、邊电極線8放置在密封構件21内 (逢、封構件2 1内之一開口·%八、p ;、 同口 4刀），且玻埸13被提供於接頭邊電 極線8與密封構件21間做為另一 馬h 接合構件。使用一種用於接 頭邊電極線8之材料鐵-镗处人a 、 鐵馱-鈷合金。密封構件21將接頭邊電 極線8與加熱電路5及雷炻4 士、击n 、 才一 連接邯分與圍著密封構件21 周邊之環境隔開。 用為該另一接合構件之姑撿η女 义圾瑪13有一表面從密封構件21表 面之一部分伸至接頭邊電柘蟑s矣 、 私技、，果8表面又一邵分，且玻璃13為 一凹入斷面形狀（形成所謂之 明 < 弓月形）。因此如本發明第一實 例支持器1之情形，可葬为念& 9在山封構件21與接頭邊電極線8間 接合部分處之玻璃13而獲得高度氣密度。 此外，在圖6與7所示之去祛哭1 士 』、 ^ 心文待斋1中，接頭邊電極線8與陶 瓷體2之電路，諸如用於加敎泰 …、包路5及電極4 <供電接頭，間 之連接部分即位於被密封構件21及較體2所圍之區域 内。當密封構件2〗與陶間之接合部分是以破糾形成 而有-預定氣密度且密封構件21與接頭邊電極線8是以玻 璃13固足於一起時，連接部分位於其中之區域即與圍燒密 封構件21周邊之環境_1此如本發明第-實例之情形 -27· 1275157 可防止發生當進行諸如㈣之熱處理時該等電路或形 接邵分《材科被管狀構件6或類似構件内所 氧腐蝕之問題。 乳T疋 此外，目密封構件2i是置於管狀構件6十，且上述連接部 分與圍㈣封構件21周邊之區域隔離(密封)，在過 應慣性氣體至管狀構件6内之器具即無必要。於是 ; 1之結構被簡化’其製造成本也可降低。此外，當以支持;; =-工件進㈣刻或類似處理時，不錢續供應慣性氣體 至言狀構件6中，因而使用該支持器1可減低運行成本。 熱膨脹係數相差不大之材料可用為陶瓷體2、密封構件 2卜接頭邊電極線8及電源邊電極線9之材料。在此情形下， 可防止由於周圍溫度改變而在密封構件2ι與陶资體2材料 間接合部分之熱應力集中。 如上所述，因密封構件21每個均係為接頭邊電極線8與諸 如加熱電路5及電極4等電路間之每一連接部分所提供，密 封構件之大小可予以減小。因而密封構件。之成本亦； 減低。此外，因陶瓷體2與密封構件21互相接觸之區域可減 小，密封構件21對陶瓷體2内溫度分布之影響可減小。於是 因陶瓷體2内之溫度分布可更為一致，置於陶瓷體2上諸如 半導體基板之工件之溫度分布亦可一致。 在圖6與7所示之支持器丨中，玻璃13被填入接頭邊電極線 8與用於加熱電路5及電極4間之連接部分處而做為接頭邊 電極線8與密封構件21間之一附加接合構件。在此情形下， 只要密封構件2 1與接頭邊電極線8在密封構件2丨底部確實 -28- 1275157 接口在起並被达、封，在密封構件21之中央或上部有一間 :可形成於獪封構件21之内壁與接頭邊電極線8間。該間隙 真空或非氧化環境。在此情形下，可有效防止接 >r本〇及接咕过電極線8與諸如加熱電路5電路間之 連接部分被氧化。 在支持w 1中，；^接頭邊電極線8與諸如加熱電路$間連接 :分位於其中之區域至密封構件21所包圍區域之氦漏料 最妤為10 Pa·m /s或更小。在此情形下，位於密封構件η 内接颏邊弘極線8及在接頭邊電極線8與用於加熱電路^或 類似電路供電接頭間連接部分之氧化可被確實抑制。/ 在支持器1中，在陶瓷體2與密封構件21間之接合部分處 可提供用為接合構件之玻璃。在此情形下，密封構件21與 陶资體2間之間隙可由該破璃填起。因而該接合部分之氣密 度可予改善。 & 如圖6與7所示，用為接合構件之玻璃13有一表面從陶瓷 體2背面之一部分伸至密封構件21表面之一部分，且玻璃。 之表面為凹入_月形。在此情形下，要暸解玻璃13對密 封構件21及陶瓷體2之表面有良好可浸潤性而使密封構件 21及陶瓷體2之接合部分有高氣密度。因此一定可防止該接 合部分產生漏洩。 與本發明第一實例中之情形相同，Zn〇-Si〇2_B2〇”基玻璃 可用做玻璃13。此外，形成密封構件2丨之材料可含有相當 於形成管狀構件6之材料。再者，形成密封構件21之材料可 含有形成陶瓷體2之材料。 -29 - 1275157 圖8為心Γ照本發明第四實例圖6與7所示支持器i第一修改 例之斷面圖。圖9為圖8所示工件支持器一部分之斷面圖。 見參a « 8與9對本發明第目實例支持器之帛一修改 說明。 如圖8與9所#，用做半導體製造裝置底座之支持器^之結 構除用於將㈣構件21接合至陶㈣2之玻璃Η之形狀不 同外，基本上相當於圖6與7中所示支持器丨之結構。亦即， 在^ 8與9所示支持11 1中’破璃13是提供在密封構件21與陶 Un此外，破璃丨3被放置成圍住並密封接頭邊電極 線8與供電接頭7ai7e間之連接區。再者，在密封構件21與 接頭邊電極線8間有-並未提供玻璃13之空間。亦即，在密 封構件21與接頭邊電極線8間，玻璃丨3僅被提供於陶資體2 邊。此一結構可提供與圖6與7所示支持器丨同樣之優點。 在將玻璃13固定於支持器！内之熱處理中，最好透過密封 構件21對玻璃13施加一壓力。在此情形下，最好從密封構 件21邊對玻璃13施加—i⑽g/em2或更大之壓力。於是破璃 13與陶Ή2、密封構件21或接頭邊電極線8間介面處所出 現小間隙之數目可減少或除去。因而從電接頭〜至^與接 頭邊電極線8間之連接部分位於其中之每個區域之氦漏戍 率可降低，亦即氣密度可改善。此外，當施加—刚 或更大之壓力時，可獲大致相當於第四實例中之優點；但 當壓力小於100 g/cm2時則無法獲得減小氦漏洩率之重大效 果。 ’ 圖10為按照本發明第四實例圖6與7所示支持器丨第二修 -30 - ^75157 改例之斷面圖。圖u為圖10所示工件支持器一部分之斷面 圖。現參照圖10與Π對本發明第四實例支持器之第二修改 例加以說明。 π圖10與π所示，用做半導體製造裝置底座之支持器}之 、。構除陶瓷體2表面形狀不同外基本上相當於圖8與9所示 支持器1者。亦即，在圖10所示支持器丨中，在陶瓷體2背面 邊形成三個槽25(見圖11)。在計劃圖中槽25之形狀可為一圓 形或多邊形。此外，在槽25之底壁處，曝露供電接頭以至 乃。供電接頭7a至八曝露於槽25之底壁且連接至對應之接 頭邊電極線8。密封構件21及玻璃13被提供於供電接頭。至 &與接頭邊電極線8間連接部分之周圍，與圖8與9所示支持 器1之情形同。 如此形成之結構提供相當於圖8與9所示支持器1之優 點。此外，因供電接頭7a至7C與接頭邊電極線8間之連接部 分是置於槽25内，若於橫向對接頭邊電極線8施加一應力 (亦即，例如當應力於橫向施加至連接部分時），該應力不但 以分散方式施加於玻璃13與槽25底壁間之接合部分而且施 加至槽25之侧壁於是可改善該等連接部分之耐久性。在此 N形下，玻璃13或密封構件21之放置最好是與槽25之側壁 接觸。以此一結構，因玻璃13或密封構件21是被槽乃之侧 壁支撐，可有效改善連接部分對外力之耐久性。 在上述本發明之一些實例中，供電接頭〜至八與接頭邊 電極線8間之連接部分可有以螺絲旋入之結構。例如’在供 電接頭7a至7c每個之一末端部分形成一螺紋部分，而在接 • 31 · 1275157 頭邊電極線8每個之上方部分（相對於每個供電接頭。至& 處）形成有螺紋之孔。然後將螺紋部分***螺故孔中而2 = 於-起’即可使接頭邊電極線8與對應之供電接頭〜至化互 相連接。 舉例 為證明本發明支持器之優點，曾進行下面之實驗。 首先，準備具有表丨所列成分之四種粉狀起始材料。Further, in the above case, the glass provided between the ceramic body 2 and the sealing member U-fixing member can be used to join the ceramic body 2 and the sealing member u. Therefore, the same advantages of the holder i shown in Fig. 4 can be obtained. Further, the glass provided between the ceramic body 2 and the sealing member n can be formed by heat treatment by applying a pressure of 2 or more through the sealing member U. In this case, since the small gap can be removed by the glass, the gas density at the joint portion between the ceramic body 2 and the sealing member U can be improved and the joining force can be changed. ϋ Fourth Example A cross-sectional view of a supporter of a fourth example of the present invention. Fig.? is a sectional view showing the _supporter-section. The holder of the fourth example of the present invention will now be described with reference to Figs. -26 - 1275157, as shown in Figures 6 and 7, used as a support for the base of a semiconductor manufacturing apparatus, the vertical structure is substantially equivalent to that shown in Fig. 5, but the structure of the sealing member 21 (see Fig. 6) is different. That is, in the case of Figure 6, the mouth of the board, you support the fast, the sealing member 21 is placed in the tubular member 6 and the joint side of the conductive member of the A m 4 t N The electrode line 8 is surrounded by a portion connecting the circuit such as the electrode 4 and the enthalpy of the rain. The sealing member 21 is joined by the glass 13 so as to be joined and fixed to the surface of the ceramic body 2 containing aluminum nitride. In addition, the pull-up, the interest-and-connection, and the side electrode line 8 are placed in the sealing member 21 (one opening in the sealing member 21, %8, p; the same knife), and the glass bowl 13 is Provided between the joint side electrode wire 8 and the sealing member 21 as another horse joint member. A material for the joint electrode line 8 is used as the material of the iron-mantle a, iron-cobalt alloy. The sealing member 21 separates the joint-side electrode line 8 from the heating circuit 5, the Thunder, and the N, and the environment around the periphery of the sealing member 21. The 捡 女 圾 圾 13 13 used for the other joint member has a surface extending from a portion of the surface of the sealing member 21 to the joint side, and the surface of the fruit 8 is further separated, and the glass 13 It is a concave cross-sectional shape (forming a so-called clear < bow shape). Therefore, as in the case of the first embodiment holder 1 of the present invention, the glass 13 at the joint portion between the mountain sealing member 21 and the joint side electrode line 8 can be buried to obtain a high gas density. In addition, in FIGS. 6 and 7, the circuit of the joint electrode line 8 and the ceramic body 2, such as for the twisting of the wire, and the electrode 5, the electrode 4 < Power supply connector, the connection portion between the two is located in the area surrounded by the sealing member 21 and the body 2. When the joint portion of the sealing member 2 and the ceramic chamber is formed by breaking and having a predetermined gas density and the sealing member 21 and the joint side electrode line 8 are fixed together by the glass 13, the region in which the connecting portion is located is The environment around the periphery of the sealing member 21 is _1 as in the case of the first embodiment of the present invention -27· 1275157, which can be prevented from occurring when the heat treatment such as (4) is performed, the circuit is shaped by the tubular member 6 or the like. The problem of oxygen corrosion in the component. In addition, the eye sealing member 2i is placed in the tubular member 6, and the connecting portion is isolated (sealed) from the region around the surrounding (four) sealing member 21, and the means for passing the inertial gas into the tubular member 6 is unnecessary. . Thus, the structure of 1 is simplified, and its manufacturing cost can also be reduced. Further, when the support;; = - workpiece advance (four) engraving or the like, the inert gas is not supplied continuously to the speech member 6, and thus the use of the holder 1 can reduce the running cost. The material having a small difference in thermal expansion coefficient can be used as the material of the ceramic body 2, the sealing member 2, the joint side electrode line 8, and the power supply side electrode line 9. In this case, the thermal stress concentration at the joint portion between the sealing member 2i and the ceramic material 2 due to the change in the ambient temperature can be prevented. As described above, since the sealing members 21 are each provided as a joint between the joint side electrode wires 8 and circuits such as the heating circuit 5 and the electrodes 4, the size of the sealing member can be reduced. Thus sealing the member. The cost is also reduced; Further, since the area where the ceramic body 2 and the sealing member 21 contact each other can be reduced, the influence of the sealing member 21 on the temperature distribution in the ceramic body 2 can be reduced. Therefore, since the temperature distribution in the ceramic body 2 can be more uniform, the temperature distribution of the workpiece placed on the ceramic body 2 such as the semiconductor substrate can also be uniform. In the holder 所示 shown in Figs. 6 and 7, the glass 13 is filled between the joint side electrode line 8 and the connection portion between the heating circuit 5 and the electrode 4 as the joint side electrode line 8 and the sealing member 21 One of the additional joining members. In this case, as long as the sealing member 21 and the joint-side electrode line 8 are at the bottom of the sealing member 2, the -28-1275157 interface is up and sealed, and there is a space in the center or upper portion of the sealing member 21: The inner wall of the sealing member 21 is connected to the joint side electrode line 8. This gap is a vacuum or non-oxidizing environment. In this case, it is possible to effectively prevent the connection portion between the connection electrode line 8 and the circuit such as the heating circuit 5 from being oxidized. In the support w1, the joint side electrode line 8 is connected to, for example, the heating circuit $: the area in which the portion is located to the area surrounded by the sealing member 21 is at most 10 Pa·m / s or less. In this case, the oxidation of the inner side of the sealing member n and the connection between the joint side electrode line 8 and the connection portion for the heating circuit or the similar circuit power supply can be surely suppressed. / In the holder 1, a glass serving as a joining member can be provided at a joint portion between the ceramic body 2 and the sealing member 21. In this case, the gap between the sealing member 21 and the ceramic body 2 can be filled by the broken glass. Therefore, the air density of the joint portion can be improved. & As shown in Figs. 6 and 7, the glass 13 used as the joining member has a surface extending from a portion of the back surface of the ceramic body 2 to a portion of the surface of the sealing member 21, and glass. The surface is concave _ moon shape. In this case, it is understood that the glass 13 has good wettability to the surfaces of the sealing member 21 and the ceramic body 2, and the joint portion of the sealing member 21 and the ceramic body 2 has a high gas density. Therefore, leakage of the joint portion must be prevented. As in the case of the first example of the present invention, a Zn〇-Si〇2_B2〇" based glass can be used as the glass 13. Further, the material forming the sealing member 2 can contain a material equivalent to the formation of the tubular member 6. Further, formation The material of the sealing member 21 may contain a material for forming the ceramic body 2. -29 - 1275157 Fig. 8 is a cross-sectional view showing a first modification of the holder i shown in Figs. 6 and 7 according to a fourth example of the present invention. A cross-sectional view of a portion of the workpiece holder shown in Fig. 8. See the modification of the first example holder of the present invention with reference to a « 8 and 9. As shown in Figures 8 and 9 , a support for the base of a semiconductor manufacturing device. The structure of ^ is basically equivalent to the structure of the holder 图 shown in Figs. 6 and 7 except for the shape of the glass crucible for joining the (4) member 21 to the ceramic (4) 2. That is, the support shown in Figs. In the case of 11 1 'the broken glass 13 is provided in the sealing member 21 and the ceramic Un. Further, the broken glass 3 is placed to enclose and seal the joint region between the joint side electrode line 8 and the power supply joint 7ai7e. Further, in the sealing member 21 Between the connector side electrode line 8 and the space of the glass 13 is not provided. Between the member 21 and the joint side electrode line 8, the glass crucible 3 is only provided on the side of the ceramic body 2. This structure can provide the same advantages as the holder 图 shown in Figs. 6 and 7. Fixing the glass 13 to the holder In the heat treatment inside, it is preferable to apply a pressure to the glass 13 through the sealing member 21. In this case, it is preferable to apply a pressure of -i (10) g/em 2 or more to the glass 13 from the side of the sealing member 21. The number of small gaps occurring at the interface between the ceramic pot 2, the sealing member 21 or the joint side electrode line 8 can be reduced or removed. Thus, the connection portion between the electrical joints ～ and the joint side electrode lines 8 is located in each of the regions. The leakage rate can be lowered, that is, the gas density can be improved. In addition, when the pressure of - just or greater is applied, the advantage in the fourth example can be obtained; but when the pressure is less than 100 g/cm2, it cannot be obtained. A significant effect of reducing the leakage rate of the crucible. Fig. 10 is a cross-sectional view showing a modification of the holder 丨 second modification -30 - ^75157 shown in Figs. 6 and 7 according to the fourth example of the present invention. Fig. 10 is a view of Fig. 10. A cross-sectional view of a part of the workpiece holder. Referring now to Figure 10 and A second modification of the fourth embodiment of the invention will be described. π is shown in Fig. 10 and π, and is used as a support for the base of a semiconductor manufacturing apparatus. The structure of the ceramic body 2 is substantially equivalent to that of Fig. 8 And the holder 1 shown in Fig. 9. That is, in the holder 图 shown in Fig. 10, three grooves 25 (see Fig. 11) are formed on the back side of the ceramic body 2. The shape of the groove 25 in the plan view may be one. Further, at the bottom wall of the groove 25, the power supply connector is exposed so that the power supply terminals 7a to 8 are exposed to the bottom wall of the groove 25 and connected to the corresponding joint side electrode wire 8. The sealing member 21 and the glass 13 It is supplied to the power supply connector. The vicinity of the connection portion between the & connector side electrode line 8 is the same as that of the holder 1 shown in Figs. The structure thus formed provides the advantages equivalent to the holder 1 shown in Figs. Further, since the connection portion between the power supply terminals 7a to 7C and the joint side electrode line 8 is placed in the groove 25, if a stress is applied to the joint side electrode line 8 in the lateral direction (that is, for example, when stress is applied to the connection portion in the lateral direction) At this time, the stress is applied not only to the joint portion between the glass 13 and the bottom wall of the groove 25 but also to the side wall of the groove 25, thereby improving the durability of the joint portions. In this N-shape, the glass 13 or the sealing member 21 is preferably placed in contact with the side walls of the groove 25. With this configuration, since the glass 13 or the sealing member 21 is supported by the side walls of the groove, the durability of the joint portion to the external force can be effectively improved. In some of the above examples of the present invention, the connection portion between the power supply terminals ～8 and the joint side electrode wires 8 may have a screw-in structure. For example, 'a threaded portion is formed at one end portion of each of the power supply terminals 7a to 7c, and an upper portion (relative to each power supply joint. to the &) is formed at each of the upper side electrode lines 8 of the connection 31. Threaded holes. Then, the threaded portion is inserted into the screw hole and 2 = at -', so that the joint side electrode wire 8 and the corresponding power supply connector are connected to each other. EXAMPLES To demonstrate the advantages of the holder of the present invention, the following experiment was conducted. First, four powdery starting materials having the ingredients listed in Tables are prepared.

表I 序號 —---- 成分1 質量比 --~___ Α1Ν:Υ2〇, = 100:5 成分2 —--— A1N:Y2〇, = i〇〇；〇.5 成分3 —---- Al2〇3：CaO:MgQ = l00:0.2:0 7 成分4 AlN:CaO=l〇〇：2.0 丄、、、口 B則及洛劑，然 後以球形研磨器攪拌而形成有該等成分（成分1至4)之軟膏< 下一步，將含有表〗中丨至4項成分之個別軟膏以醫用刀 使（形成薄片。將如此形成之薄片（綠&薄片）於進行燒結摘 切割成^徑350 _之圓形。然後以屏幕印刷法對如此形成 I圓形薄片施加含鎢之漿而形成一加熱電路。 下一步，將未被提供有加熱電路之複數張薄片疊在其2 :成有上述加熱電路之表面上。此外，在此疊片表面上名 $上-張具有以屏幕印刷法施加含鎢之漿所形成電漿形居 (射頻）電極或靜冑電極（靜電抗流）之薄片。於是即形成以畜 等薄片製成之疊片。 -32- 1275157 將如此形成之堆疊薄片以在氮環境中700 °C加熱溫度之 加熱處理而除油。 下一步，使用含有成分1，2及4軟膏之疊片以在氮環境中 1，8 0 0 °C 7)口熱溫度加以燒結。含有成分3軟膏所製成之疊片以 在氮環境中1，600°C加熱溫度加以燒結。接著在預定位置形 成供應電流至加熱電路及靜電電極或電漿形成電極之供電 接頭。 ： 下一步，具有表I所示1至4成分之每種軟膏以喷乾法形 0 成粒。用該等粒做為起始材料，以乾壓法形成圓筒鑄體。 將此等鑄體以在氮環境中700°C加熱溫度予以除油。接下來 在與上述分別具有成分1至4陶瓷體燒結之同樣狀況下進行 燒結處理。 在上述燒結處理後，對所形成之圓筒經燒結體進行機器 處理。於是即可獲得内徑50 mm，外徑60 mm，長200 mm之 管狀構件。 除該等管狀構件外，以與上述同樣步驟形成結構不同於 · 上述管狀構件之管狀構件。在此等管狀構件之内壁上距將 要與陶瓷體接合之接合部分（該管狀構件末端）30 mm距離 處提供一保持密封構件之突出部。該用做支持零件之突出 部高度為5 mm(從管狀構件内壁算起之高度），内徑為40 mm ° 將A12〇3-Y203-A1N所製之軟膏施加至該管狀構件之一末 端表面。該管狀構件及陶瓷體與塗有軟膏之表面連接於一 起，該表面則與陶瓷體之背面相接觸，對如此形成之接合 -33 - 1275157 體在處理燒結陶瓷體同樣狀況下施以熱處理。於是每一陶 瓷體與每一管狀構件均接合於一起。在每一接合體中，用 以從外部向埋入於陶瓷體内之加熱電路、靜電電極及電漿 形成電極洪電之各俣電接頭末端則曝露於位於管狀構件内 之表面區域。 接下來，將用做電源供應導電構件之接頭邊電極線連接 至用於加熱電路、靜電電極及電漿形成電極。透過這些電 極線’電流可供至加熱電路、靜電電極及電衆形成電極。 此外，分別具有成分1至4之薄片被切割成預定大小，然 後被施以熱處理而成為與形成陶瓷體同樣情形之一些燒結 體。必要時，該等燒結體之形成可藉堆疊複數個薄片而有 預定之厚度。接下來對如此形成之燒結體施以機器處理而 在其中形成讓接頭邊電極線穿過之開口部分。此外，對該 等疊片體施以機器處理俾調整其周邊尺寸而使之可***管 狀構件内。於是即形成密封構件。此外，以類似方式形成 用於接頭邊電極線與本發明第四實例所述電路間每一連接 部分之另一類型密封構件。 接下來在每一陶瓷體均被提供有管狀構件、供電接頭及 用為電源供應構件之電極線後，每個密封構件均被***管 狀構件内。另一選擇是可將密封構件固定至管狀構件内而 形成一接合體，然後可將該接合體接合至陶资體。此外， 將上述另一類型密封構件提供於陶瓷體上而圍住接頭邊電 極線之每一連接部分。 接下來分別在管狀構件與密封構件間及電極線與密封構 -34- ^75157 件間施加破璃。該菩參私 在直… 以封構件在氮環境中，在氬環境中， 在真窆裱境中或在空氣中 ^ ® ^ ^ ^ ^ 乂 70〇 c洫度之點火處理分別加 乂 LJ疋而使欲封構件、營 ..， &狀構件及陶瓷體所包圍之區域被 在訶。此外，在且右卜 八 为一類型密封構件之樣本上分別 將玻璃施加至密封構件盥 扣 /、㈣是肖豆間及電極線與密封構件 間，然後以與上述類似之女々 > 、， 又万式進仃熱處理（點火處理）。在某 些樣本中是透過密封構件盤由、> 干對破璃犯加100 g/cm2或更大壓力 之同時進行熱處理。於异誇荽含 、疋4寺铪封構件被分別固定，且密 封構件及陶瓷:體所包圍乏| r^. .u G固I母一區域被密封。在這些舉例中 所用之玻璃為ZnO-Si〇2_B2〇3晶化玻璃。 按照上述万法，曾準備表„至^中所示之68個樣本。此 外，為證明在對破璃點火處理中所施加壓力之影響，曾準 備表VII至IX所π之39個樣本（樣本69至1〇7號）。表丨！至1：^顯 示製造下述測試中所用樣本之狀況及其評估結果。 -35- 1275157Table I No.—---- Ingredient 1 Mass ratio--~___ Α1Ν:Υ2〇, = 100:5 Ingredient 2 —--— A1N:Y2〇, = i〇〇;〇.5 Ingredient 3 —--- - Al2〇3:CaO:MgQ = l00:0.2:0 7 Ingredient 4 AlN:CaO=l〇〇: 2.0 丄,,, B, and the agent, and then stirred by a spherical grinder to form the components ( Ointment of ingredients 1 to 4) < Next, individual ointments containing 丨 to 4 ingredients in the table are treated with a medical knife (forming a sheet. The thus formed sheet (green & sheet) is subjected to sintering and cutting A circular shape of 350 mm is formed. Then, a tungsten-containing slurry is applied to the thus formed circular sheet to form a heating circuit by screen printing. Next, a plurality of sheets not provided with the heating circuit are stacked on the 2 : on the surface of the above heating circuit. Further, on the surface of the laminate, the name of the upper-sheet has a plasma-formed (radio frequency) electrode or a static electrode (static antistatic) formed by applying a tungsten-containing slurry by screen printing. a sheet of flow. Thus, a laminate made of a sheet of animal or the like is formed. -32- 1275157 The stacked sheet thus formed is heated at 700 ° C in a nitrogen atmosphere. The temperature is heat treated to remove the oil. Next, a laminate containing the ingredients 1, 2 and 4 ointments is used to sinter at a hot temperature of 1,800 ° C in a nitrogen atmosphere. The laminate containing the component 3 ointment was sintered at a heating temperature of 1,600 ° C in a nitrogen atmosphere. A supply terminal that supplies current to the heating circuit and the electrostatic or plasma forming electrode is then formed at a predetermined location. : Next, each of the ointments having the components 1 to 4 shown in Table I was granulated by spray drying. Using the pellets as a starting material, a cylindrical cast body was formed by a dry pressing method. The cast bodies were degreased at a heating temperature of 700 ° C in a nitrogen atmosphere. Next, sintering treatment was carried out under the same conditions as those of the above-described ceramic bodies having the components 1 to 4, respectively. After the above sintering treatment, the formed sintered body of the cylinder is subjected to machine treatment. Thus, a tubular member having an inner diameter of 50 mm, an outer diameter of 60 mm and a length of 200 mm can be obtained. In addition to the tubular members, a tubular member having a structure different from that of the above tubular member is formed in the same manner as described above. A projection for holding the sealing member is provided on the inner wall of the tubular member at a distance of 30 mm from the joint portion (the end of the tubular member) to be joined to the ceramic body. The height of the protrusion used as the supporting part is 5 mm (the height from the inner wall of the tubular member), and the inner diameter is 40 mm °. The ointment made of A12〇3-Y203-A1N is applied to one end surface of the tubular member. . The tubular member and the ceramic body are joined to the surface to which the paste is applied, and the surface is in contact with the back surface of the ceramic body, and the thus formed joint -33 - 1275157 body is subjected to heat treatment in the same condition as the sintered ceramic body. Each ceramic body is then joined to each tubular member. In each of the joined bodies, the ends of the respective electrical contacts for forming the electrodes from the outside to the heating circuit, the electrostatic electrodes, and the plasma embedded in the ceramic body are exposed to the surface region located in the tubular member. Next, a joint side electrode wire serving as a power supply conductive member is connected to the heating circuit, the electrostatic electrode, and the plasma forming electrode. Through these electrode lines, current is supplied to the heating circuit, the electrostatic electrode, and the electric potential forming electrode. Further, the sheets each having the components 1 to 4 are cut into a predetermined size, and then subjected to heat treatment to become some sintered bodies in the same manner as in the case of forming the ceramic body. If necessary, the sintered bodies may be formed by stacking a plurality of sheets to have a predetermined thickness. Next, the sintered body thus formed is subjected to a machine treatment to form an opening portion through which the joint side electrode wire passes. In addition, the laminations are machined to adjust their peripheral dimensions so that they can be inserted into the tubular members. Thus, a sealing member is formed. Further, another type of sealing member for each joint portion between the joint side electrode line and the circuit of the fourth example of the present invention is formed in a similar manner. Next, after each ceramic body is provided with a tubular member, a power supply joint, and an electrode wire used as a power supply member, each of the sealing members is inserted into the tubular member. Alternatively, the sealing member can be secured within the tubular member to form a joined body which can then be joined to the ceramic body. Further, the above-described another type of sealing member is provided on the ceramic body to surround each of the joint portions of the joint side electrode wires. Next, a glass is applied between the tubular member and the sealing member and between the electrode wire and the sealing member -34-^75157. The Bodhisattva is privately... In the nitrogen environment, in the argon environment, in the real environment or in the air ^ ^ ^ ^ ^ 乂 70 〇 c 之 degree of ignition treatment respectively 乂 LJ 疋The area surrounded by the components to be sealed, the bat.., & In addition, the glass is applied to the sealing member of the sample of the sealing member of the right type, and (4) is between the beans and the electrode line and the sealing member, and then, similar to the above-mentioned female 々> Another type of heat treatment (ignition treatment). In some samples, heat treatment is performed while applying a pressure of 100 g/cm2 or more through the sealing member disk, > The sealing members are fixed separately, and the sealing members and ceramics are surrounded by the body. r^. .u G solid I mother area is sealed. The glass used in these examples is ZnO-Si〇2_B2〇3 crystallized glass. According to the above-mentioned method, 68 samples shown in Table ～ were prepared. In addition, 39 samples of π in Tables VII to IX were prepared to prove the influence of the pressure applied in the igniting treatment. 69 to 1〇7). Table 丨! to 1:^ shows the status of the samples used in the following tests and their evaluation results. -35- 1275157

Ln Η—A H—k 1—k 1—* v〇 00 <1 ON Ln 4^ U) to »—-a 樣本 序號 舉例 舉例 舉例 舉例 比較例 舉例 舉別 舉例 舉例1 比較例 比較例 比較例 舉例 舉例 舉例 類型 成分1 成分1 成分1 成分1 成分3 成分3 成分2 成分1 成分1 成分1 成分1 成分1 1成分1 成分1 丨成分1 鷂 成分1 成分1 成分1 成分2 成分3 成分3 成分2 成分1 i 成分1 成分1 成分1 成分1 成分1 成分1 成分1 管狀構件 材料 成分1 成分1 成分1 成分4 成分1 成分3 成分1 | 成分4 I 成分2 成分1 成分3 成分1 成分1 成分1 成分1 密封構件 材料 接觸 接觸 接觸 S 5S S 5S 密封 )㈣ t? to 空氣 興t 2 密封環境 科伐 科伐 科伐 科伐 i科伐 科伐 1科伐1 科伐 1 科伐 科伐 科伐 科伐 科伐 科伐 電極線 材料 碑3 }¥ * 办1 彎月之 形成 I—A Η—A Wii H—^ a H—^ % Vftli 二 ✓ 無法密封 (玻璃破裂） H—^ Wi >—A Veil Η—k Vrrti H· H—k 〇όο Wu /Τφ 無法密封 (玻璃破裂） 無法密封 (供電接頭之氧化） 無法密封 (供電接頭之氧化） Λ 〇όο Vdi Η- Η—1 Wi H—fc 漏洩率 (Pa.m3/s) ui: ρττ \ 抗氧化力 (在空氣中750°C) >II -36- 1275157Ln Η—AH—k 1—k 1—* v〇00 <1 ON Ln 4^ U) to »—-a Examples of sample numbers Examples Examples Examples Examples Examples 1 Comparative Example Comparative Example Illustrative example type component 1 component 1 component 1 component 1 component 3 component 3 component 2 component 1 component 1 component 1 component 1 component 1 1 component 1 component 1 丨 component 1 鹞 component 1 component 1 component 1 component 2 component 3 component 3 component 2 Component 1 i Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Tubular member Material component 1 Component 1 Component 1 Component 4 Component 1 Component 3 Component 1 | Component 4 I Component 2 Component 1 Component 3 Component 1 Component 1 Component 1 Ingredient 1 Sealing member material Contact contact S 5S S 5S Seal) (4) t? to Air Xing t 2 Sealing environment Kovaro Corvica cutting i Kovar cutting 1 cutting 1 Koval 1 Kovar cutting Kovar Kovaro electrode wire material monument 3 } ¥ * Office 1 The formation of the crescent moon I-A Η—A Wii H—^ a H—^ % Vftli two ✓ Unsealable (glass rupture) H—^ Wi > —A Veil Η—k Vrrti H· H—k 〇όο Wu /Τφ Unsealing (glass rupture) Unsealing (oxidation of power supply joint) Unsealing (oxidation of power supply joint) Λ 〇όο Vdi Η- Η-1 Wi H-fc Leakage rate (Pa. M3/s) ui: ρττ \ antioxidant capacity (750 ° C in air) >II -36- 1275157

to K) U) Κ) 00 as 樣本 序號 舉例 1比較例 舉例 舉例 舉例 舉例 比較例 1 _ί 比較例 比較例 類型 成分l 1 成分3 成分3 成分2 成分1 成分1 成分1 成分1 成分1 斗a· 成分2 1成分3 成分3 成分2 成分1 成分1 1 成分1 _;_ 成分1 ί—^ 管狀構件 材料 成分4 成分1 成分3 成分1 成分4 成分2 成分1 i _1 成分3 成分1 密封構件 材料 接觸 接觸 接觸 接觸 擒觸 接觸 接觸 接觸 接觸 密封 2 2 空氣 密封環境 科伐 1科伐 j 科伐 科伐 科伐 科伐 科伐 極線材料 片GJ 彎月形之 形成 H—^ 無法密封 (玻璃破裂） Η—A Vdi Η—* Wi Vdi 1—* Wu 無法密封 (玻璃破裂） 無法密封 (供電接頭之氧化） 無法密封 (供電接頭之氧化） 漏洩率 (Pa*m3/s) 抗氧化力 (在空氣中750°C) HH -37- 1275157 ON UJ LT\ u> LO U) K) LO to K) ^r\ 萍 綠 褲 rr 麵 rr vr 辨 潋 3： 錄 宣 δ 宣 δ 窆 宣 宣 宣 耸 今 今 今 今 今 今 今 今 今 今 韋 Η-^ U) U) K) H—^ Η—k 1—^ I~k )—λ >—* H—^ 鷂 > 耸 今 今 今 今 今 ^£. Κ) U) U) K) H—k h—k h—* H—^ >—Λ h—k H-^ 雜 丰 辂 今 今 今 今 今 今 今 今 今 今 韋 H-^ U) H-* b〇 1—^ U) Η—A μ—A 1—k μ~έ 雜 丰 窗 窗 畲 m 窗 窗 窗 窗 畲 © 输 j^g j^q Μ 竺 Μ 2 鯓 滿 g 单 耸 单 脔 笳 办t }¥ 送 ^ΙΠ Η—^ 無法密封 H—* )—-k 1—^ Η—A '¥ )—k '¥ 输 H—k 1—-A Η— 〇^ 1¾ 洚 〇 Vflll Vgfti Vaii Vrfli r^j Vtill p^ r打 Vdi Vfffl Vrii) H* 乂V ^τ W P 3 uj w" 命 麻 命 淼 p^ ρ -θ- —X. 4 〇 〇° -38 - 1275157To K) U) Κ) 00 as Sample No. Example 1 Comparative Example exemplified Example Comparative Example 1 _ ί Comparative Example Comparative Example Type Component 1 1 Component 3 Component 3 Component 2 Component 1 Component 1 Component 1 Component 1 Component 1 Component 2 1 component 3 component 3 component 2 component 1 component 1 1 component 1 _; _ component 1 ί-^ tubular member material component 4 component 1 component 3 component 1 component 4 component 2 component 1 i _1 component 3 component 1 sealing member material Contact contact contact contact contact contact contact contact seal 2 2 air-sealed environment Koval 1 Kovar j Kovar Koko Koko Koko Koko E-polar material sheet GJ Meniscus formation H-^ Unsealable (glass fracture ) Η—A Vdi Η—* Wi Vdi 1—* Wu Unsealing (glass rupture) Unsealing (oxidation of power supply joints) Unsealing (oxidation of power supply joints) Leakage rate (Pa*m3/s) Oxidation resistance (at 750°C in the air) HH -37- 1275157 ON UJ LT\ u> LO U) K) LO to K) ^r\ 绿绿裤rr face rr vr Identification 3: Recording δ 宣δ 窆Xuanxuan Xuanzheng today, present and modern, today and today Wei Wei-^ U) U) K) H—^ Η—k 1—^ I~k )—λ >—* H—^ 鹞> Today, now and now ^£. Κ) U) U) K) H-kh-kh-* H-^ >-Λ h-k H-^ 杂丰辂今今今今今今今今今今韦H-^ U) H-* b〇1—^ U) Η—A μ—A 1—k μ~έ Miscellaneous window 畲m Window, window, window 畲© Input j^gj^q Μ 竺Μ 2 鯓满满单单单脔笳t }¥送送ΙΠ Η—^ Unable to seal H—* )—-k 1—^ Η—A '¥ )—k '¥ 输 H—k 1—-A Η — 〇 ^ 13⁄4 洚〇Vflll Vgfti Vaii Vrfli r^j Vtill p^ r playing Vdi Vfffl Vrii) H* 乂V ^τ WP 3 uj w" 命麻命淼p^ ρ -θ- —X. 4 〇 〇° -38 - 1275157

b〇 to OJ VO Lk) 00 U) 樣本 序號 舉例 舉例 舉例 比較例 舉例 舉例 舉例 比較例 舉例 舉例 舉例 比較例 舉例 舉例 舉例 比較例 類型 j— 成分1 成分1 成分1 成分1 成分1 成分1 I 成分1 成分1 __ί 成分1 : H—^ 成分1 ! ! 成分1 成分1 成分1 成分1 m 成分1 1成分l 1成分1 成分1 成分1 I成分1 I 成分1 成分1 成分1 成分1 I成分ί 成分1 ______________________1 成分1 \ 成分ί 1 成分ί ! 成分1 管狀構件 材料 i成分1 成分1 丨成分1 成分1 成分1 成分1 I 成分1 成分1 成分1 成分1 成分1 成分1 国1 成分1 成分1 成分1 成分1 密封構件 材料 s S S a a S 53 S S 密封 2 2 2 2 Z 2 密封環境 Cu - Mo-3 Cu-Mo-2 Cu-Mo-l Cu-Mo (無鍍層） Mo-3 Mo-2 Mo-l Ρ ? 綠 ^^ Cu-W-3 Cu-W-2 Cu-W-l Cu-W (無鍍層） ΰ) to 1 W (無鍍層） 電極線 材料1 彎月形之 形成 H—^ °όο Vffli Vt 1—* Vfltl KT8或更少 H—* Vdi 1(Τ8或更少 1(T8或更少 1〇_8或更少 H—k pk 1〇-8或更少 ►—a Wtl UT8或更少 KT8或更少 j i _1 pk Vrjli 1—^ Vrtti H—k Wu H—^ Veil 漏洩率(Pa*m3/s) 被氧化 被氧化 被氧化 被氧化 抗氧化力 (在空氣中750°C) >v -39- 1275157 ON 00 5 〇\ 2 2 S σ> § L/1 00 <1 LT\ ON Ln L/λ on 樣本 序號 舉例 舉例 舉例 比較例 舉例 舉例 舉例 比較例 舉例 舉例 舉例1 1 比較例 舉例 舉例i 舉例J 比較例 類型 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 i 成分1 成分1 成分1 成分1 i 成分1 | 成分1 成分1 :¾:遂 m 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 1成分l 成分1 管狀構件 材料 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 密封構件 材料 S 符 S 接觸 接觸 接觸 接觸 密封 2 2 2 2 2 2 2 真空 2 密封環境 Cu-Mo-3 Cu-Mo-2 Cu-Mo -1 Cu-Mo (無鍍層） Mo-3 Mo-2 Mo-1 Mo (無鍍層） Cu-W-3 Cu-W-2 Cu-W-l Cu-W (無鍍層） ΰ) to 1 H—k W (無鍍層） 電極線 材料 * 彎月形之 形成 1〇-8或更少 1—k 〇όο Van Vt 1〇·8或更少 η—^ Η—* io Vfitl KT8或更少 1〇_8或更少 1〇-8或更少 1〇·8或更少 Vali Η- KT8或更少 Vrrti Η—k 〇όο Vnji 、十 H—^ Vrtfi Vr H—* 1〇·8或更小 — i^^(Pa，m3/s) 被氧化 被氧化 被氧化 被氧化 抗氧化力 (在空氣中750°C)〇 O O O O O O Ingredient 1 __ί Ingredient 1 : H—^ Ingredient 1 ! ! Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 m Ingredient 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 In Components 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients ί Ingredients 1 ______________________1 Ingredient 1 \ Ingredients ί 1 Ingredient ί ! Ingredient 1 Tubular member material i component 1 component 1 丨 component 1 component 1 component 1 component 1 I component 1 component 1 component 1 component 1 component 1 component 1 country 1 component 1 component 1 component 1 Ingredient 1 Sealing member material s SS aa S 53 SS Sealing 2 2 2 2 Z 2 Sealing environment Cu - Mo-3 Cu-Mo-2 Cu-Mo-l Cu-Mo (no coating) Mo-3 Mo-2 Mo -l Ρ ? Green ^^ Cu-W-3 Cu-W-2 Cu-Wl Cu-W (no plating) ΰ) to 1 W (no plating) Electrode wire material 1 Forming the meniscus H—^ °όο Vffli Vt 1—* Vfltl KT8 or less H—* Vdi 1 (Τ8 or Less 1 (T8 or less 1〇_8 or less H-k pk 1〇-8 or less ►-a Wtl UT8 or less KT8 or less ji _1 pk Vrjli 1—^ Vrtti H—k Wu H —^ Veil Leakage rate (Pa*m3/s) is oxidized, oxidized, oxidized, oxidized, and oxidized (750 °C in air) >v -39- 1275157 ON 00 5 〇\ 2 2 S σ> § L /1 00 <1 LT\ON Ln L/λ on Example of sample serial number Example comparison example Example example Comparative example Example 1 1 Comparative example example i Example J Comparative example type component 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Component 1 Component 1 Component 1 i Component 1 Component 1 Component 1 Component 1 i Component 1 | Component 1 Component 1 : 3⁄4: 遂m Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 1 Component 1 Component 1 Tubular member Material component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Sealing member material S symbol S contact contact contact seal 2 2 2 2 2 2 2 true Empty 2 sealed environment Cu-Mo-3 Cu-Mo-2 Cu-Mo -1 Cu-Mo (no plating) Mo-3 Mo-2 Mo-1 Mo (no coating) Cu-W-3 Cu-W-2 Cu-Wl Cu-W (no coating) ΰ) to 1 H—k W (no coating) Electrode wire material* Meniscus formation 1〇-8 or less 1-k 〇όο Van Vt 1〇·8 or Less η—^ Η—* io Vfitl KT8 or less 1〇_8 or less 1〇-8 or less 1〇·8 or less Vali K- KT8 or less Vrrti Η-k 〇όο Vnji Ten H—^ Vrtfi Vr H—* 1〇·8 or smaller — i^^(Pa,m3/s) is oxidized, oxidized, oxidized, oxidized, and oxidized (750 ° C in air)

>VI -40 - 1275157 2 00 U) 00 Κ) 〇〇 1—* 00 〇 <1 Ό On fo -0 ON Ό 樣本 序號 比較例 舉例 舉例 舉例 舉例 比較例 舉例 比較例 潋 成分1 成分1 成分1 成分1 I成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 鷂 成分1 成分1 -1 成分1 成分1 1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 i 成分1 成分1 成分1 管狀構件 材料 成分1 成分1 )—k 成分1 I成分1 I成分1_I 成分1 成分1 成分1 成分1 成分1 丨成分1 成分1 成分1 成分1 成分1 密封構件 材料 屈 〇〇 Η ^cc 蘇 S ^00 與玻璃接觸(圖8) 蘇 画1 ^QO 蘇 Μ ^00 蘇 pS3> m Μ ^00 與玻璃接觸(圖8) 蘇 S ^〇〇 i§* Μ ^00 、拉 画1 ^00 蘇 矣 S ^00 、廢 M· s ^00 Μ 蘇 S QO 崧 蘇 s ^〇〇 與玻璃接觸(圖8) 密封環境 Cu-w Mo-3 Mo-3 Mo-2 Mo-2 Mo-1 Mo-1 〇 U) ΰ) i to 1 t—i 1 Η—k 科伐 電極線 材料 100 g/cm2 100 g/cm2 •知 1100 g/cm2 '¥ 100 g/cm2 Ρ 100 g/cm2 100 g/cm2 密封負荷 KT8或更少 1〇·8或更少 1—* Vrti 乂V 1〇·8或更少 1〇·8或更少 Η—λ °όο Vfltl l〇·8或更少 1〇·8或更少 \irsh °όο Veil Vt °ώ Vflli H-A °ώ Wfl Η—^ i^r Vfili 1(Γ8或更少 1〇·8或更少 H—k Vdi 漏戌率 (Pa*m3/s) 抗氧化力 (在空氣中750°C) $11 -41 - 1275157 )—* ο 00 LT\ \〇 U) 00 00 00 oo 00 Os 00 樣本 序號 舉例 舉例 舉例 舉例 舉例 舉例 舉例 舉例 舉例 比較例 舉例 舉例 舉例 舉例 舉例 舉例 類型 成分1 成分1 成分1 成分1 成分1 成分1 成分1 I成分1 1成分1 | 成分1 成分1 成分1 成分1 成分1 成分1 成分1 :¾:遜 鷂 成分1 成分1 成分1 成分1 成分1 I成分1 | 成分1 成分1 1成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 管狀構件 材料 1—k 成分1 成分1 成分1 成分' I成分1 I 成分1 成分1 1成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 密封構件 材料 蘇 厕 ^00 與玻璃接觸(圖8) 與玻璃接觸(圖8) 與玻璃接觸(圖8) 與玻璃接觸(圖8) 與玻璃接觸(圖8) 與玻璃接觸(圖8) 雜 卖 S ^00 蘇 食 S ^00 蘇 s ^00 與玻璃接觸(圖8) @ 〇〇 Η M· 蘇 遨 涵 ^00 i§· S ^00 與玻璃接觸(圖8) 密封 2 Z 2 密封環境 1科伐1 科伐 科伐 Cu-Mo-3 Cu-Mo-3 Cu-Mo-2 Cu-Mo-2 Cu-Mo-1 Cu-Mol Cu-Mo Cu-w-3 Cu-w-3 Cu-w-2 g 1 to Cu-w-1 Cu-w-1 電極線 材料 〇 σο^ 3 ίΟ 100 g/cm2 100 g/cm2 1100 g/cm2 1 1100 g/cm2 1 100 g/cm2 100 g/cm2 ο i to 密封負荷 1(Γ8或更少 1〇·8或更少 1〇·8或更少 1〇·8或更少 Ph V〇H 乂V 1〇4或更少 1〇·8或更少 κτ8或更少 h—k Vcli 1〇·8或更少 ΙΟ·8或更少 1〇4或更少 pk Vfpfl Η—^ Veu l〇-8或更少 H—k 〇όο Vim 漏洩率 (Pa.m3/s) 抗氧化力 (在空氣中750°C) ^vm -42- 1275157>VI -40 - 1275157 2 00 U) 00 Κ) 〇〇1—* 00 〇<1 Ό On fo -0 ON 样本 Sample No. Comparative Example Example Example Comparative Example Example Comparative Example 潋 Component 1 Component 1 Component 1 Component 1 I component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 鹞 component 1 Component 1 - 1 Component 1 Component 1 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 i Component 1 Component 1 Component 1 Tubular member Material component 1 Component 1) - k component 1 I component 1 I component 1_I component 1 component 1 component 1 component 1 component 1 丨 component 1 component 1 component 1 component 1 Component 1 Sealing member material 〇〇Η ^cc Su S ^00 Contact with glass (Fig. 8) Su painting 1 ^QO Su Shi ^00 Su pS3> m Μ ^00 Contact with glass (Fig. 8) Su S ^〇〇 I§* Μ ^00 , draw 1 ^00 Su Shi S ^00 , waste M· s ^00 Μ Su S QO 嵩 Su s ^ 〇〇 contact with glass (Fig. 8) Sealed environment Cu-w Mo-3 Mo -3 Mo-2 Mo-2 Mo-1 Mo-1 〇U) ΰ) i to 1 t—i 1 Η—k Kovar electrode wire material 100 g/cm2 100 g/cm2 • Know 1100 g/cm2 '¥ 100 g/cm2 Ρ 100 g/cm2 100 g/cm2 Sealing load KT8 or less 1〇·8 or less 1—* Vrti 乂V 1〇·8 or less 1〇·8 or lessΗ—λ °όο Vfltl l〇·8 or less 1〇·8 or less\irsh °όο Veil Vt °ώ Vflli HA °ώ Wfl Η—^ i^r Vfili 1 (Γ8 Or less 1〇·8 or less H-k Vdi Leakage rate (Pa*m3/s) Antioxidant power (750°C in air) $11 -41 - 1275157 )—* ο 00 LT\ \〇U ) 00 00 00 oo 00 Os 00 Sample No. Example exemplified Example exemplified Example Comparative example exemplified example exemplified example type component 1 component 1 component 1 component 1 component 1 component 1 component 1 I component 1 1 component 1 | 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 : 3⁄4: Inferior component 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Ingredients 1 Component 1 Tubular member material 1-k Component 1 Component 1 Component 1 Component 'I component 1 I Component 1 Component 1 1 Component 1 Component 1 Component 1 Component 1 1 Ingredient 1 Ingredient 1 Ingredient 1 Sealing member material Su toilet ^00 Contact with glass (Fig. 8) Contact with glass (Fig. 8) Contact with glass (Fig. 8) Contact with glass (Fig. 8) Contact with glass (Fig. 8) Glass contact (Fig. 8) Miscellaneous sale S ^00 Su Shi S ^00 Su s ^00 Contact with glass (Fig. 8) @ 〇〇Η M· 苏遨涵^00 i§· S ^00 Contact with glass (Fig. 8 Seal 2 Z 2 Sealing environment 1 Kovar 1 Kovara Cu-Mo-3 Cu-Mo-3 Cu-Mo-2 Cu-Mo-2 Cu-Mo-1 Cu-Mol Cu-Mo Cu-w- 3 Cu-w-3 Cu-w-2 g 1 to Cu-w-1 Cu-w-1 electrode wire material 〇σο^ 3 ίΟ 100 g/cm2 100 g/cm2 1100 g/cm2 1 1100 g/cm2 1 100 g/cm2 100 g/cm2 ο i to seal load 1 (Γ8 or less 1〇·8 or less 1〇·8 or less 1〇·8 or less Ph V〇H 乂V 1〇4 or Less 1〇·8 or less κτ8 or less h-k Vcli 1〇·8 or less ΙΟ·8 or less 1〇4 or less pk Vfpfl Η—^ Veu l〇-8 or less H —k 〇όο Vim Leakage rate (Pa.m3/s) Oxidation resistance (750°C in air) ^vm -42- 1275157

Η—* Ο 1—k H—* 〇 )—k s 1—k S 〇 Η—A 樣本 序號 舉例 比較例 舉例 舉例 舉例 舉例 舉例 類型 成分1 成分3 成分3 成分2 成分1 成分1 成分1 陶瓷體 材料 成分2 成分3 成分3 成分2 成分1 成分1 | 成分1 管狀構件 材料 成分4 成分1 成分3 成分1 成分4 成分2 成分1 密封構件 材料 矣 S ^00 與玻璃接觸(圖8) S ^00 蘇 5 S ^00 JS- S ^00 、廢 蘇 Μ ^00 蘇 Μ ^00 密封 2 2 密封環境 1科伐1 科伐 科伐 科伐 科伐 科伐 科伐 (δ| 韋歓 Ρ P 密封負荷 1〇·8或更少 無法密封 (玻璃破裂） 1—k ^00 Wfi H—^ Vflii 1〇_8或更少 Η—* Wll 〇oc Vfrti 漏洩率 (Pa.m3/s) 抗氧化力 (在空氣中750°C) >IX -43 - 1275157 二各表中「電極線材料」欄内之Cu_w係指銅㈣鎢㈤ 合金。在表v中「電極線材料」欄内用於第％號樣本之n 係指該電極線是以具有2 _厚鎳(Νι)鍍層(以下稱為第—鍍 幻（鶴(W)基材料所製。在「電極線材料」欄内用於第39 唬‘本《％-2’’係#以具有丨_厚金(Au)鍍層(以下稱為第 一鍍層）之鴒（W)基材料用做電極線塗層。在「電極線材料」 欄内用於第40號樣本之,,w_3 ,,係指以具有2 _厚筆)層 及μπι厚金（Au)層（以下稱為第三鐘層）之嫣㈤基材料以 該次序鍍於其上而用做電極線。 "在「電極線材料」櫊内用於第42至44號樣本之"cuu， ^ W 2及Cu-W-3”係指每個電極均係分別以具有第—’ 第二及第三鍍層之銅鎢（Cu_w)合金基材料所製。在「電極 線材料」欄内用於第46至48號樣本之"編]"至” m〇_3，,= 每個電極線均係分別以具有第-至第三鐘狀銘㈣基^ 料形成。在表VII至IX中，，密封”櫚内之"與玻璃接觸（圖8广一 祠係指使用用於圖8所示支持器之密封類型。 為確定支持器之抗熱及氧化力’每—樣本均在空氣中以 兩5〇 C她以熱處理丨，000小時。在熱處理後測量加熱電路等之 電路電阻而對每-樣本在電極線與加熱電路或類似電路間 連接部分（供電接頭或類似物）之氧化情形加以評估。因此可 確疋按照本發明各實例所形成之支持器樣本有圖2至9所示 之充分抗氧化力。 接下來，為確足每一樣本密封部分（為陶瓷體、管狀構件 及在封構件所包圍之區域）之氣密度，如圖12及13所示形成 -44- 1275157 一從陶资體表面（其上安裝有一晶圓）穿透至密封部分之測 里孔1 9。‘说具有相當於本發明第四實例圖6與7所示結構之 樣本而j，如圖14所示測量孔丨9是形成於密封構件2丨之内 壁兩件至其内周邊。就具有相當於本發明第四實例第—修 改例如圖8所示結構之樣本（第69至1〇7號樣本）而言，為確= 氣密度而形成從陶资體表面(其上安裝有一晶圓)穿透至J 封部分之測量孔。圖12至14是用於氣密特性測量之每一二 本之斷面圖。在密封區(管狀構件、密封構件及陶资體包： (區域）及密封部分（密封構件及陶t：體包圍之區域）内朝箭 頭2〇所指方向透過以機器所形成之此一測量孔19被抽心 空，接下來用氦偵測器測量每一樣本之漏㈣。其結果如 表II謂所示。可從表„腿看出，按照本發明實例每一樣 本之岔封區均有充分之氣密特性。 此外，密封部分（密封構件與接頭邊電極線間之接合部分 及密封構件與陶资體間之接合部分)為在用做接合構件之 玻璃與管狀構件、密封構件、陶资體或電極線間彎月部分 之形成而被抽成真空。其結果如表11至¥1所示。從表丨丨至… 可看出，在每個有彎月部分之支持器樣本中，密封區均有 高氣密特性。 關於第69至1〇7號樣本，在點火處理中（進行密封時）是否 曾施加-壓力如表VmX所示。從表VMIx可暸解在密 封時被施加一壓力之樣本有較高氣密特性 雖然在表II至IX中並未顯示出來，但细（m〇)與嫣㈤卻是 被用做形成埋入於陶资體内供電接頭之材料。當銷（m〇)與 •45 · 1275157 鐫（w)用做供電 ;八 +寺，在該等特定材料間之優點# 面並揲可辨識出來之不同。 eu万 在表11土 VI中之「密封」欄内顯示 及「個別」u「空間，； 工門」接觸」 二岬」你相如个發明第一實例中 * 中因密封構件！隐衣_ θ <、·.口知，升 牛及陶瓷m疋互相隔開放置， 為被密封構件、其处戌二間做 詞係指如本發明第三實例 ：二 體之背面相接觸η「 ，、甲《在封構件與陶资 卜’個別」係指本發明第四實例之結 別之密封槿電路與接頭邊電極線間之對應連接部分提供個 *、件。「與玻璃接觸(圖8)」-詞係指如圖8所示支 待=結構，其中僅在密封構件之陶㈣邊提供玻璃。 、封環境」欄顯示在施加玻璃後為將密封構件接合及 =至電極線或管狀構件之熱處理中所用之環境。「電極線 ,櫚切示之材料連^料以於陶《内諸如 Κ电路、靜電電極及電漿形成電極等電路供電接頭所用 之材料。 上面以舉例方式對各實例加以說明，但本發明並非限於 孩寺貫例。本發明之精神與範圍均說明於申請專利範圍 中，除此之外，只要不脫離本發明之精神與範圍仍可選擇 性地有所修改。 【圖式簡單說明】 '圖1為本發明第一實例用於一處理裝置内一工件支持器 之 fe/f 10J 圖； 圖2所示為圖1工件支持器一部分之放大斷面圖； -46· 1275157 圖3為圖1工件支持器與圖2所示不同部分之放大斷面圖； 圖4為本發明第二實例工件支持器之斷面圖； 圖5為本發明第三實例工件支持器之斷面圖； 固6為本發明第三實例工件支持器之斷面圖； 圖7為圖6所示支持器一部分之斷面圖； 圖8為按照本發明第四實例圖6與7所示工件支持器第一 修改例之斷面圖； 圖9為圖8所示工件支持器一部分之斷面圖； 圖1〇為按照本發明第四實例圖6與7所示工件支持器第二 修改例之斷面圖； 圖11為圖10所示工件支持器一部分之斷面圖，· 圖12為用於確定不透氣程度樣本之斷面圖； 圖13為用於確定不透氣程度樣本之斷面圖；及 圖14為用於確定不透氣程度樣本之斷面圖。 圖式代表符號說明 1 支持器 2 陶瓷體 3 體基座 4 電極 5 加熱電路 6，50 管狀構件 7A-7C 供電接頭 8 接頭邊電極線 9 電源邊電極線 -47- 1275157 10 連接部分 11，21 密封構件 12 開口 1 η JL J Θ又 14 彎月形部分 15 末端開口部分 17 金銲材料 18 突出部 19 測量孔 25 槽 3 體基座 4 電極 5 加熱電路 6 管狀構件 7a ， 7b ， 7c 供電接頭 8 接頭邊電極線 9 電源邊電極線 10 連接部分 11 密封構件 12 開口 13 玻璃Η—* Ο 1—k H—* 〇)—ks 1—k S 〇Η—A Sample No. Example Comparative Example Example Example Example Type Component 1 Component 3 Component 3 Component 2 Component 1 Component 1 Component 1 Ceramic Material Component 2 Component 3 Component 3 Component 2 Component 1 Component 1 | Component 1 Tubular member Material component 4 Component 1 Component 3 Component 1 Component 4 Component 2 Component 1 Seal member material 矣S ^00 Contact with glass (Fig. 8) S ^00 苏5 S ^00 JS- S ^00 , 废苏Μ ^00 苏Μ ^00 Seal 2 2 Sealed environment 1 科伐1 科科科科科科科科科科科科(δ| 韦歓Ρ P Sealing load 1 〇·8 or less cannot be sealed (glass rupture) 1—k ^00 Wfi H—^ Vflii 1〇_8 or less Η—* Wll 〇oc Vfrti Leakage rate (Pa.m3/s) Antioxidant force (in Air 750 ° C) > IX -43 - 1275157 The Cu_w in the "electrode wire material" column in each table refers to the copper (tetra) tungsten (five) alloy. It is used in the "electrode wire material" column in Table v for the %. The n of the sample means that the electrode wire is coated with 2 _ thick nickel (Νι) (hereinafter referred to as the first - plated illusion (he (W) based material In the "Electrode wire material" column, use the 39th 唬 'this '%-2'' series # for the 鸰 (W) base material with 丨 _ thick gold (Au) plating (hereinafter referred to as the first plating) Make the electrode wire coating. For the sample No. 40 in the "Electrode wire material" column, w_3, refers to the layer with 2 _ thick pen) and the layer of μπι thick gold (Au) (hereinafter referred to as the third (5) The base material is plated on it in this order and used as an electrode wire. ""cuu, ^ W 2 and Cu- in the "electrode wire material" 用于 for samples 42-44 W-3" means that each electrode is made of a copper-tungsten (Cu_w) alloy-based material having a first-second and third plating layer, and is used in the "electrode wire material" column for the 46th to 48th. The sample "编]" to "m〇_3,, = each electrode line is formed with a first to third bell-shaped (four) base material. In Tables VII to IX, seal" The contact between the palm and the glass (Fig. 8 is a type of seal used for the holder shown in Fig. 8. To determine the heat resistance and oxidation resistance of the holder', each sample is in the air at two 5 〇C she is heat treated, 000 hours. The electric resistance of the heating circuit or the like is measured after the heat treatment, and the oxidation of each electrode between the electrode line and the heating circuit or the like (supply connection or the like) is evaluated. It is therefore possible to confirm that the sample of the holder formed in accordance with the examples of the present invention has sufficient oxidation resistance as shown in Figs. 2 to 9. Next, in order to confirm the gas density of each sample sealing part (for the ceramic body, the tubular member and the area enclosed by the sealing member), as shown in Figs. 12 and 13, a -44-1275157 is formed from the surface of the ceramic body ( A wafer is mounted thereon to penetrate the inner measuring hole 19 of the sealing portion. ‘To say that there is a sample equivalent to the structure shown in Figs. 6 and 7 of the fourth example of the present invention, j, as shown in Fig. 14, the measuring aperture 9 is formed on the inner wall of the sealing member 2丨 to the inner periphery thereof. For a sample having the structure corresponding to the fourth embodiment of the present invention, for example, the structure shown in Fig. 8 (sample No. 69 to No. 7), the surface of the ceramic body is formed to have a gas density (there is a mounting thereon) The wafer) penetrates into the measurement hole of the J part. Figures 12 through 14 are cross-sectional views of each of the two measurements for hermetic characteristics. In the sealing area (the tubular member, the sealing member, and the ceramic body bag: (area) and the sealing portion (the sealing member and the area surrounded by the body t: body), the measurement formed by the machine in the direction indicated by the arrow 2〇 The hole 19 is evacuated, and then the leak of each sample is measured by a helium detector (4). The results are shown in Table II. As can be seen from the table „ leg, the seal area of each sample according to the example of the present invention In addition, the sealing portion (the joint portion between the sealing member and the joint electrode line and the joint portion between the sealing member and the ceramic body) is a glass and tubular member and a sealing member used as the joint member. The vacuum is formed by the formation of the meniscus or the meniscus between the electrode lines. The results are shown in Tables 11 to 1. From the table to the ..., it can be seen that each holder has a meniscus. In the sample, the sealing zone has high airtight characteristics. Regarding the samples No. 69 to No. 7 whether or not the ignition treatment (when sealing) was applied - the pressure is shown in Table VmX. From the table VMIx, it can be understood that when sealing The sample to which a pressure is applied has a higher airtight characteristic However, it is not shown in Tables II to IX, but fine (m〇) and 嫣(5) are used to form the material for the power supply joint buried in the ceramic body. When pin (m〇) and •45 · 1275157镌(w) is used for power supply; 八+寺, the advantage between these specific materials # 揲 揲 揲 。 eu eu eu eu eu eu eu eu eu 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表"Space,; work door" contact" 二岬" You are like a first instance of invention in the * because of the sealing member! 隐衣_ θ <, ·. Knowing that the cow and ceramic m疋 are placed apart from each other, For the sealed member, the word in the middle of the two refers to the third example of the present invention: the back side of the two body is in contact with η", and the "in the sealing member and the pottery" is referred to as the fourth example of the present invention. The corresponding connection between the sealed circuit and the joint electrode line provides a * and a piece. "Contact with glass (Fig. 8)" - the word refers to the structure as shown in Figure 8, where only the seal The ceramic (4) side of the component provides the glass. The seal environment column shows the joint of the sealing member after applying the glass and = to the electrode wire or tube The environment used in the heat treatment of the piece. "Electrode wire, the material of the palm cut is used for the material used in the circuit power supply joints such as the circuit, the electrostatic electrode and the plasma electrode. The above is an example The present invention is not limited to the scope of the invention, and the spirit and scope of the invention are described in the claims, and may be selectively modified without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [FIG. 1 is a first embodiment of the present invention for a fe/f 10J diagram of a workpiece holder in a processing apparatus; FIG. 2 is an enlarged cross-sectional view of a portion of the workpiece holder of FIG. 1; Figure 4 is an enlarged cross-sectional view of the workpiece holder of Figure 1 and different parts of Figure 2; Figure 4 is a cross-sectional view of the workpiece holder of the second example of the present invention; Figure 5 is a third example of the workpiece of the present invention FIG. 7 is a cross-sectional view of a portion of the holder shown in FIG. 6; FIG. 8 is a cross-sectional view of a portion of the holder shown in FIG. The first modification of the workpiece holder shown in 7 Figure 9 is a cross-sectional view of a portion of the workpiece holder of Figure 8; Figure 1 is a cross-sectional view of a second modification of the workpiece holder of Figures 6 and 7 in accordance with a fourth example of the present invention; 11 is a sectional view of a part of the workpiece holder shown in FIG. 10, FIG. 12 is a sectional view of the sample for determining the degree of air resistance; FIG. 13 is a sectional view of the sample for determining the degree of air resistance; A cross-sectional view of a sample used to determine the degree of air impermeability. Schematic representation of the symbol 1 holder 2 ceramic body 3 body base 4 electrode 5 heating circuit 6, 50 tubular member 7A-7C power supply connector 8 connector side electrode line 9 power supply side electrode line -47 - 1275157 10 connection part 11, 21 Sealing member 12 opening 1 η JL J Θ 14 meniscus portion 15 end opening portion 17 gold soldering material 18 projection 19 measuring hole 25 slot 3 body base 4 electrode 5 heating circuit 6 tubular member 7a, 7b, 7c power supply connector 8 Connector side electrode line 9 Power supply side electrode line 10 Connection part 11 Sealing member 12 Opening 13 Glass

-48 --48 -

Claims (1)

1275157 拾、1275157 Pick up, 申請專利範圍： 有私路且支持一工件之陶瓷體； 末‘口I5刀（第一末端邵分）固定至該陶瓷體 面之管狀構件； 一 、、一 $封構件被置於該管狀構件内且接合至管狀構件 =將官狀構件内_空間分隔成兩個區域：—個在第一末 卩刀邊上之區域（密封區域）及一個在相對邊上之區 域（相對區域）；及 口口 _ %源供應導電構件從相對邊伸出、穿透密封構件而至 岔封區域邊且電連接至該陶瓷體之電路。 如申請專利範圍第β之工件支持器，其中 與該陶资體之背面接觸。 構件 如申請專利範圍第1項之工件支持器，其中該密封構件 是置於距該陶瓷體背面一段距離處。 如申請專利範圍第！項之工件支持器，其中該密封構件 透過一固足接合構件接合至該陶瓷體之背面。 如申請專利範圍第4項之工件支持器，其中該固定接合 構件是透過該密封構件對—㈣定接合材料加熱且: 時對之施加一 100 g/cm2或更大之壓力而形成。 如申請專利範圍第！項之工件支持器，其中由該密封構 件、管狀構件及陶㈣界定之—區域為真空或非氧化環 境。 如_請專利範圍第1項之工件支持器，其中從密封構 1275157 件、管狀構件及陶瓷體所界定區域至其他區域之氦漏洩 率為108Pa*m3/s或更少。 8. 如申請專利範圍^項之工件支持器，其中該管狀構件 與密封構件透過提供於其間之—接合構件接合於—起。 9. 如中請專利範圍第8項之王件支持器，其中該接合構件 是透過ΐ亥密封構件|對一種接合材料加熱且同時對之 施加一 100 g/cm2或更大之壓力而形成。 1〇.如申請專利範圍第9項之工件支持器，其中該接合構件 有-表面從該管狀構件内表面之一部分伸至該密封構 件表面之一部分，且該接合構件之表面為一凹入彎 形。 u·如申請專利範圍第8項之工件支持器，纟中該接合構件 有-表面從該管狀構件内表面之一部分伸至該密封構 件表面之-部分，且該接合構件之表面為一凹入彎月 包括玻璃。 Π.如申請專·圍第12項之工件支持器，其中該破 ZnO-Si〇2-B2〇3-基玻璃。 碼 14.如申請專利範圍第8項之工件支持器，其中 在該密封構件與該電源供應導電構件間之接合部八 包括-提供於該密封構件與該電源供應導電°刀 附加接合構件， $ &lt; 該接合構件有一表面從該密封 1千表面炙一部分伸 -2 - 1275157 羞該電源供應導電構件表面之一部分，及 該附加接合構件之表面為一凹入彎月形。 15. 如申請專利範圍第1項之工件支持器，其中該密封構件 包括一種相同於形成該管狀構件材料之材料。 16. 如申請專利範圍第〗項之工件支持器，其中該密封構件 包括一種相同於形成該陶瓷體材料之材料。 17·如申請專利範圍第1項之工件支持器，其中該陶瓷體包 括氮化鋁。 18·如申請專利範圍第！項之工件支持器，其中該電源供應 導電構件包括一種鐵_鎳_鈷合金。 其中該電源供應 如申請專利範圍第〗項之工件支持器， 導電構件包括： 鉬與彼等合金中至少一種之基底 一含有選自包括鎢、鉬 材料；及 且含有鎳與金至少一種 一提供於該基底材料表面上 之塗層。 工件支持器之處理裝 工件支持器之半導體 種具有一如申請專利範圍第1項 —種具有一如申請專利範圍第1項 製造裝置。Patent application scope: a ceramic body having a private road and supporting a workpiece; a final 'mouth I5 knife (first end stub) fixed to the tubular member of the ceramic body surface; 1. A sealing member is placed in the tubular member And joining to the tubular member = dividing the inner space of the official member into two regions: a region on the edge of the first edge (sealing region) and a region on the opposite edge (relative region); The port_% source supplies a conductive member extending from the opposite side, penetrating the sealing member to the side of the sealing region and electrically connected to the circuit of the ceramic body. For example, the workpiece holder of the patent scope No. β is in contact with the back of the ceramic body. The member is the workpiece holder of claim 1, wherein the sealing member is placed at a distance from the back of the ceramic body. Such as the scope of patent application! The workpiece holder of the item, wherein the sealing member is joined to the back surface of the ceramic body through a fixed-foot joint member. A workpiece holder according to claim 4, wherein the fixing joint member is formed by heating the (4) bonding material through the sealing member and applying a pressure of 100 g/cm 2 or more to the pressure. Such as the scope of patent application! The workpiece holder, wherein the sealing member, the tubular member, and the ceramic (4) are defined as a vacuum or non-oxidizing environment. For example, the workpiece holder of the first aspect of the patent scope, wherein the leakage rate from the region defined by the sealing member 1275157, the tubular member and the ceramic body to other regions is 108 Pa*m3/s or less. 8. The workpiece holder of claim 2, wherein the tubular member and the sealing member are joined by a joining member provided therebetween. 9. The king piece holder of claim 8, wherein the joining member is formed by heating a joining material through a sealing member, and simultaneously applying a pressure of 100 g/cm2 or more. 1. The workpiece holder of claim 9, wherein the engaging member has a surface extending from a portion of the inner surface of the tubular member to a portion of the surface of the sealing member, and the surface of the engaging member is a concave bend shape. The workpiece holder of claim 8, wherein the engaging member has a surface extending from a portion of the inner surface of the tubular member to a portion of the surface of the sealing member, and the surface of the engaging member is a concave portion The meniscus includes glass.如 For example, apply for the workpiece holder of the 12th item, which breaks the ZnO-Si〇2-B2〇3-based glass. The workpiece holder of claim 8, wherein the joint between the sealing member and the power supply conductive member comprises: - providing the sealing member and the power supply conductive knife additional joint member, $ &lt; The joint member has a surface extending from the portion of the seal 1 - 2,075,157 to a portion of the surface of the power supply member, and the surface of the additional joint member is a concave meniscus. 15. The workpiece holder of claim 1, wherein the sealing member comprises a material identical to the material forming the tubular member. 16. The workpiece holder of claim </RTI> wherein the sealing member comprises a material identical to the material forming the ceramic body. 17. The workpiece holder of claim 1, wherein the ceramic body comprises aluminum nitride. 18·If you apply for a patent scope! The workpiece holder of the item, wherein the power supply conductive member comprises an iron-nickel-cobalt alloy. Wherein the power supply is as in the workpiece holder of the patent application scope, the conductive member comprises: a substrate containing at least one of molybdenum and at least one of the alloys, comprising a material selected from the group consisting of tungsten and molybdenum; and containing at least one of nickel and gold. a coating on the surface of the substrate material. The processing of the workpiece holder The semiconductor of the workpiece holder has the same item as the first item of the patent application. 該官狀構件内連接部分處一 面之管狀構件； 1一電路之電源供 1275157 23. 24. 25. 26. 27. 28. 應導電構件；及 一置於該管狀構件内且接合至位於該管狀構件内連 接部分處陶瓷體之密封構件； 置於孩管狀構件内且固定至該陶瓷體背面而形成每 個刀別圍住連接部分被密封部分之一些密封構件； 其中該等密封構件將連接部分之被密封部分與圍著 該密封構件外周邊之環境隔開。 如申請專利範圍第22項之工件支持器，其中該電源供應 導书構件與電路連接於—起之連接部分之密封部分為 真空或非氧化環境。 如申請專利範圍第23項之工件支持器，其中從該電源供 應導電構件與電路連接於—起之連接部分之密封部分 至其他區域之氦漏洩率為l〇-8Pa.m3/s或更少。 如申清專利範圍第2 2項之工件支持器，其中從該電源供 應導私構件與電路連接於—起之連接部分之密封部分 至其他區域之氦漏洩率為l〇-8Pa.m3/s或更少。 如申睛專利範圍第22項之工件支持器，其中該接合部分 包括提供於該陶资體與該密封構件間之接合構件。 :申睛專利範m第26項之工件支持器，其中該接合構件 是對一種接合材料加熱且同時透過該密封構件對之施 加— 100 g/cm2或更大之壓力而形成。 如申睛專利範ϋ第27項之工件支持器，其中該接合構件 有—表面從該陶资體表面之一部分伸至該密封構件表 之斗刀，且该接合構件之表面為凹入彎月形。 1275157 29_如申請專利範圍第26項之工件支持器，其中該接合構件 有一表面從該陶瓷體表面之一部分伸至該密封構件表 面之 4刀，且$亥接合構件之表面為凹入彎月形。 30.如申請參利範圍第26項之工件支持器，其中該接 包括玻璃。 0、种 31. 如申請專利範圍第30項之工件支持器，其中該 ZnO_Si〇2-B2〇3-基玻璃。 32. 如申請專利範圍第26項之工件支持器，其中 在該密封構件與電源供應導電構件間之接合部分勺 括-提供於該密封構件肖肖電源供應$電構件間刀L 加接合構件， &quot; &lt; 附 至該電源供應導電構件表面之一部分，及 忒附加接合構件之表面為一凹入彎月形。 33·如申請專利範圍第22 ^ | 丁又狩斋，其中孩密封構 包括一種相同於形成該管狀構件材料之材料。 34.如申請專利範圍第22項之工件去祛哭甘山、、 1干叉持态，其中該密封構/ 包括一種相同於形成該陶瓷體材料之材料。 35·如申請專利範圍第22項之 ^ 1干叉待斋，其中該陶瓷體丨 括鼠化銘。 36.如申請專利範圍第22項之工件支持器，其中該電源幻 導電構件包括一種鐵-鎳-鈷合金。 玖如申請專利範圍第22項之工件支持器，其中該電源供^ 導電構件包括： 1275157 含有選自包括鶬、鈿及彼等合金中至少一種之基底材 料；及 提供於該基底材料表面上且含有鎳與金至少一種之 塗層。 38. —種具有一如申請專利範圍第22項工件支持器之處理 裝置。 39. —種具有一如申請專利範圍第22項工件支持器之半導 體製造裝置。a tubular member on one side of the connecting portion of the official member; a power supply for a circuit for 1275157 23. 24. 25. 26. 27. 28. a conductive member; and a member disposed within the tubular member and joined to the tubular a sealing member of the ceramic body at the connecting portion of the member; disposed in the tubular member of the child and fixed to the back surface of the ceramic body to form some sealing members each of which blocks the sealed portion of the connecting portion; wherein the sealing members connect the connecting portion The sealed portion is spaced from the environment surrounding the outer periphery of the sealing member. The workpiece holder of claim 22, wherein the sealing portion of the connection portion of the power supply guide member and the circuit is a vacuum or a non-oxidizing environment. The workpiece holder of claim 23, wherein a leakage rate from the sealed portion of the connection portion of the power supply connecting member and the circuit to the other region is l〇-8 Pa.m3/s or less . For example, the workpiece holder of claim 22 of the patent scope, wherein the leakage rate from the sealed portion of the connection portion of the power supply guiding member and the circuit to other regions is l〇-8Pa.m3/s Or less. The workpiece holder of claim 22, wherein the joint portion comprises an engaging member provided between the ceramic body and the sealing member. The workpiece holder of claim 26, wherein the joining member is formed by heating a joining material while applying a pressure of - 100 g/cm 2 or more through the sealing member. The workpiece holder of claim 27, wherein the joint member has a surface extending from a portion of the surface of the ceramic body to a bucket of the seal member, and the surface of the joint member is a concave meniscus shape. The workpiece holder of claim 26, wherein the joining member has a surface extending from a portion of the surface of the ceramic body to the surface of the sealing member, and the surface of the joining member is a concave meniscus. shape. 30. A workpiece holder as claimed in claim 26, wherein the connection comprises glass. 0. Seed 31. The workpiece holder of claim 30, wherein the ZnO_Si〇2-B2〇3-based glass. 32. The workpiece holder of claim 26, wherein a joint portion between the sealing member and the power supply conductive member is provided-provided in the sealing member, and the electric member inter-joint L is added to the joint member, &quot;&lt; Attached to a portion of the surface of the power supply conductive member, and the surface of the additional joining member is a concave meniscus. 33. If the patent application is in the scope of 22nd | Dingshen, the child seal comprises a material identical to the material forming the tubular member. 34. The workpiece of claim 22, wherein the workpiece is to be weaned, and the dry fork is held, wherein the sealing structure comprises a material identical to the material forming the ceramic body. 35. If the patent application is in the 22nd paragraph of the patent, the dry body is to be fastened, and the ceramic body includes the mouse. 36. The workpiece holder of claim 22, wherein the power phantom conductive member comprises an iron-nickel-cobalt alloy. For example, the workpiece holder of claim 22, wherein the power supply member comprises: 1275157 comprising a base material selected from the group consisting of at least one of ruthenium, iridium and alloys thereof; and provided on a surface of the base material and A coating containing at least one of nickel and gold. 38. A processing apparatus having a workpiece holder as in the 22nd patent application. 39. A semiconductor manufacturing apparatus having a workpiece holder as in the 22nd patent application.
TW092107513A 2002-04-15 2003-04-02 Workpiece holder for processing apparatus, and processing apparatus using the same TWI275157B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002112523A JP3870824B2 (en) 2001-09-11 2002-04-15 SUBSTRATE HOLDER, SENSOR FOR SEMICONDUCTOR MANUFACTURING DEVICE, AND PROCESSING DEVICE

Publications (2)

Publication Number Publication Date
TW200307337A TW200307337A (en) 2003-12-01
TWI275157B true TWI275157B (en) 2007-03-01

Family

ID=29243319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092107513A TWI275157B (en) 2002-04-15 2003-04-02 Workpiece holder for processing apparatus, and processing apparatus using the same

Country Status (3)

Country Link
KR (1) KR100934827B1 (en)
CN (1) CN100346462C (en)
TW (1) TWI275157B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011009866B4 (en) * 2011-01-31 2013-09-05 Heraeus Precious Metals Gmbh & Co. Kg Directly applied electrical feedthrough
DE102011009858B8 (en) 2011-01-31 2013-11-07 Heraeus Precious Metals Gmbh & Co. Kg Cermet-containing bushing for a medically implantable device with a bonding layer
DE102011009867B4 (en) 2011-01-31 2013-09-05 Heraeus Precious Metals Gmbh & Co. Kg Ceramic bushing for a medically implantable device
DE102011009855B8 (en) 2011-01-31 2013-01-03 Heraeus Precious Metals Gmbh & Co. Kg Ceramic bushing with inductive filter
KR101345693B1 (en) * 2011-11-29 2013-12-30 (주)티티에스 Substrate holder module
WO2018179891A1 (en) * 2017-03-28 2018-10-04 住友電気工業株式会社 Wafer holding body
KR102331072B1 (en) * 2018-04-27 2021-11-29 엔지케이 인슐레이터 엘티디 Wafer support
JP6775099B1 (en) * 2018-12-20 2020-10-28 日本碍子株式会社 Ceramic heater

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5460603A (en) * 1993-04-08 1995-10-24 Massachusetts Institute Of Technology Method and apparatus for preventing back flow in gastroenterological feeding system
JPH07169737A (en) * 1993-12-14 1995-07-04 Tokyo Electron Ltd Treating device
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
JP3545866B2 (en) * 1996-01-31 2004-07-21 京セラ株式会社 Wafer holding device
KR19980071011A (en) * 1997-01-24 1998-10-26 조셉 제이. 스위니 High Temperature and High Flow Rate Chemical Vapor Deposition Apparatus and Related Deposition Methods
JP2001230059A (en) * 2000-02-10 2001-08-24 Ibiden Co Ltd Ceramic substrate for device of semiconductor manufacture and inspection
JP4637316B2 (en) * 2000-02-24 2011-02-23 京セラ株式会社 Ceramic heater having cylindrical body and heating device using the same

Also Published As

Publication number Publication date
TW200307337A (en) 2003-12-01
CN1452232A (en) 2003-10-29
CN100346462C (en) 2007-10-31
KR100934827B1 (en) 2009-12-31
KR20030082400A (en) 2003-10-22

Similar Documents

Publication Publication Date Title
US7264699B2 (en) Workpiece holder for processing apparatus, and processing apparatus using the same
US6057513A (en) Joint structure of metal member and ceramic member and method of producing the same
JP6497248B2 (en) Wafer holder
JP5394186B2 (en) Parts for semiconductor manufacturing equipment
KR101432320B1 (en) Bonded structure and method of producing the same
JP2002293655A (en) Jointing structure of metal terminal and ceramic member, jointing structure of metal member and ceramic member and jointing material for jointing metal terminal and ceramic member
TWI275157B (en) Workpiece holder for processing apparatus, and processing apparatus using the same
TWI336504B (en)
US20020006678A1 (en) Susceptor and manufacturing method thereof
JP4331983B2 (en) Wafer support member and manufacturing method thereof
JP2008305968A (en) Electrode connection structure of wafer holder
JPH1174336A (en) Wafer support member
JP2004253786A (en) Joint structure of ceramics
JP3966376B2 (en) SUBSTRATE HOLDER, PROCESSING DEVICE, AND CERAMIC SUSCEPTOR FOR SEMICONDUCTOR MANUFACTURING DEVICE
JP6699765B2 (en) Wafer holder
JP2006313919A (en) Processed object retainer, susceptor for semiconductor manufacturing apparatus, and processor
JP2006179897A (en) Workpiece holder, susceptor for semiconductor manufacturing apparatus, and processing apparatus
US7252872B2 (en) Joined structures of ceramics
JP2006121034A (en) Wiring board with lead pin
JP2006191124A (en) Holder for treated object, treatment apparatus and ceramic susceptor for semiconductor manufacturing apparatus
JP3866009B2 (en) Package for electrostatic chuck and semiconductor element storage
JP2006324229A (en) Airtight terminal
JPH0547953A (en) Package for semiconductor device
JP2631397B2 (en) Package for storing semiconductor elements
TW202349537A (en) Feeder member and wafer placement table

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees