TW200307337A - Workpiece holder for processing apparatus, and processing apparatus using the same - Google Patents

Workpiece holder for processing apparatus, and processing apparatus using the same Download PDF

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Publication number
TW200307337A
TW200307337A TW092107513A TW92107513A TW200307337A TW 200307337 A TW200307337 A TW 200307337A TW 092107513 A TW092107513 A TW 092107513A TW 92107513 A TW92107513 A TW 92107513A TW 200307337 A TW200307337 A TW 200307337A
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Taiwan
Prior art keywords
sealing member
workpiece holder
ceramic body
joint
scope
Prior art date
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TW092107513A
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Chinese (zh)
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TWI275157B (en
Inventor
Masuhiro Natsuhara
Hirohiko Nakata
Akira Kuibira
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Sumitomo Electric Industries
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Priority claimed from JP2002112523A external-priority patent/JP3870824B2/en
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200307337A publication Critical patent/TW200307337A/en
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Publication of TWI275157B publication Critical patent/TWI275157B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An inexpensive workpiece holder having high reliability and a processing apparatus equipped with the workpiece holder are provided, in which damage caused by oxygen in the air is prevented. The holder comprises: a ceramic body which has an electrode and a heater circuit and which can holds a workpiece; a tubular member having an end portion connected to the ceramic body; a sealing member which is disposed inside the tubular member and which isolates a space inside the tubular member into two regions: a region on the first end portion ("sealed portion") and a region on the opposite side ("opposite region"); and power supply conductive members which extend from the opposite region side, penetrating the sealing member to the sealed region side, and which are electrically connected to the electrode and the heater circuit.

Description

200307337 玖、發明說明： ] 發明所屬之技術領域 士本發明係關於一種用於保持一種在一諸如一半導體製造 !置之處理裝置内被加以處理之諸如一晶圓之材料之支： 士（、下稱為工件支持器或基座），及一使用該支持器之處理 裝置本發明特別是關於一種對熱循環有極佳可靠性之工 件支持器及具有該工件支持器之處理裝置。 【先前技術】 直到目前為止在半導體裝置之製造步驟中、薄膜之形成 或蝕刻處理均是在工件上，#即在半導體基板上，進行。 用於處理該種基板之處理裝置具有_基座，該基座為在半 導體基板處理中用以保持一半導體基板之支持器。 在第7153706號日本未審查專利申請公開案中曾揭露 種傳統式之上述基座。 但該傳統式之上述基座有下述之一些問題。亦即為在一 支撐台内供應一慣性氣體，必須為基座提供一供氣管，此 外’供應慣性氣體所需之裝置’諸如質量流控制器，必須 連接至該供氣管。因此使該基座之結構變為複雜而增加用 做工件支持器之基座之製造成本。 再者，使用此種基座’因必須_直對支撐台内供應慣性 氣體，也增加該基座之運行成本。 【發明内容】 本發明之-目的是提供-種可藉避免反應氣體所造成損 害而獲得高可靠性之廉價工件支持器及一種有該工件支持 -6 - 200307337 器之處理裝置。 本發明之工件支持器包括：一有一電路且能支持一工件 之陶瓷體；一有一固定至該陶瓷體背面之末端部分（第一末 端部分）之管狀構件；一置於該管狀構件内且與之接合並將/ 該管狀構件内一空間分為兩個區域之密封構件；一位於第 一末端部分邊上之區域（密封區域）及一位於相對邊上之區 域（相對區域）；及從相對區域邊伸出，穿透該密封構件而至 該密封區域邊且電連接至該陶瓷體上電路之電源供應導電 構件。 本發明之處理裝置具有上述之工件支持器。 用於半導體製造裝置中之基座要耐得住諸如在半導體基 板上蝕刻處理之嚴厲處理狀況，除此之外該基座尚須廉 價。使用本發明之工件支持器可獲一種用於半導體製造裝 置内確切耐得住該嚴厲處理狀況之廉價基座。 在本發明工件支持器中，因密封構件是置於支撐陶瓷體 之管狀構件中且與之接合，用於陶瓷體電路之連接部分是 連接至電源供應導電構件而可與工件支持器周圍之環境隔 開。因此以本發明工件支持器用於處理諸如基板之工件， 可防止連接部分被存在於管狀構件内空氣中所含氧之損 害。所以不必如上述為避免連接部分之損害而對管狀構件 内之空間供應慣性氣體。如此可減少該工件支持器之成本。 【實施方式】 按照本發明第一方面之一種工件支持器包括：一有一電 路且用以支持一工件之陶瓷體；一有一末端部分（第一末端 200307337 部分）接合至該陶瓷體之管狀構件；一置於該管狀構件内且 與之相接合並將該管狀構件内一空間分隔為兩區域之密封 構件：一在第一末端邵分邊上之區域（密封區）；及一在相對 邊上之區域（相對區）；及從該相對區邊伸至該密封區邊，穿 透該密封構件，且電連接至該電路之電源供應導電構件。 該陶瓷體内之電路包括對工件加熱之一加熱器電路，一 保持一工件於該陶瓷體上之靜電電極，或一產生電漿之射 頻電極。用於形成此一電路之材料可為低氧化阻力之鎢或 鈿等。此外，具有低氧化阻力之材料在某些情形下也用於 在該電路與該電源供應導電構件間連接部分處之電源供應 接頭。因此，若電源供應導電構件與該電路間之連接部分 在空氣中時，曝露於管狀構件内之電路若在該工件支持器 被加熱且置於其上之半導體基板或類似物被蝕刻時即可能 被存在於空氣中之氧所腐蝕。 但按照本發明，用於陶瓷體與電源供應構件間之連接部 分是位於由密封構件、管狀構件及陶瓷體所包圍之區域中 (亦即上述之密封區）。若在管狀構件與陶瓷體間及密封構件 與陶瓷體間形成接合部分而有預定之氣密度時，上述連接 部分位於其中之部分（密封部分）即與該管狀構件内被密封 部分包圍之空間隔開（以下稱為包圍區）。因此，當進行諸如 蝕刻之加熱處理時可防止該電路或形成該連接部分之材料 不會被管狀構件内環境中存在之氧所腐蝕。 此外，如上所述因該密封構件是置於該管狀構件内而使 密封區與包圍區隔開，可不必有如傳統式裝置中所提供對 200307337 該管狀構件供應慣性氣體之裝置。因此’該工件支持哭之 結構可予以簡化且其製造成本可因而減少。另外，當=該 工件支持斋處理-工件時’不必連續供應慣性氣體至管狀 構件中，因而減少使用上述工件支持器處理之運行成本。 再者，為構成該工件支持器之陶瓷體、管狀構件、密封 構件、及電源供應導電構件’選擇相互間差別不大之具有 適當熱膨脹《之材料可避免諸如因環境溫度改變所造成 熱應力局部集中之問m而即可獲得能對付熱循環所造 成熱磁滯之高可靠性工件支持器。 在按照本發明第-方面之工件支持器中，密封構件最好 是能與陶资體之背面（晶圓將被安裝其上表面之相對邊）接 觸。此外，在按照本發明第—方面之工件支持器中，可用 提供於其間之固定接合構件將密封構件接合至陶资體表 面0 在此情形下’密封構件本身不需要有大力量，因該陶资 體可支撐㈣封構件。目而密封構件之厚度可減小。於是 可使设计該密封構件之自由度較大。 在按照本發明第-方面之工件支持器中，可藉透過該密 封構件施加100 g/em2或更大之壓力對岐接合材料加熱而 形成該固定接合構件。 因此固定接合構件中之小間隙數目減少，如此即可獲得 有極佳氣密度之接合部分。此外，陶资體與密封構件^之 接合2力可同時增大1施加至固定接合構件之恩力定在1〇〇 g/Cm2或更大之理由是當壓力在100 g/cm2或更大時可增加 200307337 固定接合構件之氣密特性，而當壓力小於100 g/cm2時即無 法獲得增加氣密度之優點。 在按照本發明第一方面之工件支持器中，密封構件可置 於離陶瓷體表面一段距離處。 若如此時，因密封構件不與陶瓷體接觸而可防止陶瓷體 溫度之分布。於是由於密封構件與陶瓷體之接觸因與密封 構件接觸而變為不均勻。結果可使陶瓷體中之溫度分布更 為一致，因而也易於使得保持在陶瓷體上工件中之溫度分 布一致。 在按照本發明第一方面之工件支持器中，被密封構件、 管狀構件及陶瓷體包圍之區域可為真空或非氧化環境。 若如此時，可有效防止電源供應導電構件及電源供應導 電構件與該區域内電路間連接部分之氧化。 在按照本發明第一方面之工件支持器中，從被密封構 件、管狀構件及陶瓷體所包圍區域至其他區域之氦漏洩率 可為1(T8 Pa*m3/s或更小。 若如此時，當該密封區内之氦漏洩率設定在上述範圍内 之值時，位於該區内電源供應導電構件及該電路與電源供 應導電構件間連接部分之氧化一定可予防止。 按照本發明第一方面之工件支持器可更包括一提供於管 狀構件與密封構件間接合部分處之接合構件。 若如此時，管狀構件與密封構件間接合部分處之間隙可 由該接合構件填起。因而可改善上述接合部分之氣密度。 於是管狀構件内之第一區可確切與圍繞該工件支持器之一 200307337 外部區隔離。 在按照本發明第一方面之工件支持器中，該接合構件可 有一表面從該管狀構件内部表面之一部分伸至該密封構件 表面之一邹分，且該接合構件之表面最好為一凹入彎月形。 當該接合構件有上述形狀時（所謂之彎月形），應暸解該接 合構件對密封構件及管狀構件之表面有良好之可浸潤性。 亦即，當接合構件有該凹入彎月形時，接合部分即有高氣 密度。因此能確切抑制在接合部分處產生漏洩。 按照本發明第二方面之工件支持器包括一有一電路且用 以支持一工件之陶瓷體；一有一末端部分固定至該陶瓷體 背面之管狀構件；電連接至位於管狀構件内電路之電源供 應導電構件；及置於管狀構件内且固定至該陶瓷體背面之 密封構件，它形成分別圍繞各連接部分之一些被密封部分 且該密封構件將該等連接部分之被密封部分與圍繞該密封 構件外部周邊之環境隔開。 於是在陶瓷體内之該電路與電源供應導電構件間之該等 連接部分均位於一由密封構件及陶瓷體所包圍之區内。當 密封構件與陶瓷體間形成接合區而有預定之氣密度時，該 等連接部分位於其中之區域即與圍繞該密封構件之一空間 隔開。因此，當進行諸如蚀刻之加熱處理時即可防止發生 該電路或形成該等連接部分之材料被存在於管狀構件内空 氣中之氧腐蝕之問題。 此外，因密封構件是置於管狀構件内且上述連接部分與 包圍該密封構件之區域隔開（密封），即不需要安裝供應慣性 200307337 氣體至管狀構件内之器具。所以工件支持器之結構可予簡 化且因而減少其製造成本。此外，當以該工件支持器處理 (蝕刻或類似處理）工件時，不需要供應慣性氣體至管狀構件 内’因1¾可減低使周孩工件支持器處理之運行成本。 再者，選擇相互間熱膨脹係數差別不大之材料用於構成 該工件支持器之陶瓷體、管狀構件、密封構件及電源供應 導電構件，可避免諸如因環境溫度改變而造成熱應力局部 集中之問題。於是可實現對諸如熱循環之熱歷史有高可靠 性之工件支持器。 此外，如上所述因密封構件係為該電路與電源供應導電 構件間之連接部分個別提供，每一密封構件之大小可予減 小。於是可減少密封構件之成本。此外，因密封構件與陶 瓷體接觸之區域減小，可減小密封構件對陶瓷體内溫度分 布之影響。因此可使陶瓷體内溫度之分布更一致，且可易 於使保持於陶瓷體上工件内溫度之分布一致。 在按照本發明第二方面之工件支持器内，在圍繞該電路 與電源供應導電構件間各連接邵分位於其中之區域内之環 境最好為真空或非氧化之環境。 在此情形下，在電源供應導電構件及該電路與電源供應 導電構件間各連接部分之氧化可有效加以防止。 在按照本發明第二方面之工件支持器内，從連接部分位 於其中之區域向其他區域之氦漏洩率最好是1(T8 Pa*m3/s或 更小。 在此情形下，上述區域之氦漏洩率設定在上述值時，能 200307337 確切抑制電源供應導電構件及該電路與電源供應導電構件 間各連接部分之氧化。 按照本發明第二方面之工件支持器可更包括一提供於陶 资體與密封構件間接合邵分處之接合構件。 在此情形下，在陶瓷體與密封構件間接合部分内之間隙 可被該接合構件填起。因而可改善上述接合部分之氣密特 性。於是該電路與電源供應導電構件間各連接部分位於其 中之區域可確實與圍繞密封構件之區域隔開。 在按照本發明第一或第二方面之工件支持器中，可透過 密封構件對一種接合材料施加一 100 g/cm2或更大之壓力進 行熱處理而形成該接合構件。 在此情形下，因可減少接合構件中小間隙之數目，可獲 得有極佳氣密度之接合部分。於是從被密封構件、管狀構 件、及陶瓷體所包圍區域至該電路與電源供應導電構件間 連接部分位於其中之其他區域之氦漏洩率可減小（亦即可 改善氣密度）。此外，在管狀構件與密封構件間接合部分及 在陶瓷體與密封構件間接合部分之接合力可增大。因而可 獲更可靠之接合部分。將施加至接合材料之壓力設定在100 g/cm2或更大之理由是若壓力在100 g/cm2或更大時可減小 氦漏洩率，而若壓力小於100 g/cm2則很難減小氦漏洩率。 此外，在此情形下，接合材料可含有玻璃。此一含玻璃 之接合材料可藉事先點火而形成與接合構件大致相同之形 狀。接著將預先加熱之接合材料置於一預定位置並加以熱 處理。於是可很容易在接合部分完成接合及密封。 200307337 在按照本發明第二方而+ 少丄 〈工件支持器中，該接合構件有 一表面從陶瓷體背面之一 々刀伸至密封構件表面之一部 分，而該接合構件之表面最好為一凹入彎月形。 在上述情形下，當該接合構件如上述形成：所 形時，應暸解該接合構件斟 偁件對欲封構件及陶究體之表 好之可浸潤性。亦即，去令a ’良 田巧接5構件有凹入彎月形時， 合部分即有高氣密度。因 接 u而了確貫防止在接合部分發生漏 洩。 在按照本發明第一或第- 構件可包括玻璃。 mu件支持器中’該接合 人材料用於接合構件時，在於接合部分形成接 口 里中，熱處理之溫要增至uwc或更高。在此 一處理中，當密封構件及兩 4 ^ 仟及私/原供應導電構件事先被接合於 一起時，必須用能耐 飞更阿回洫又材料來形成電源 供應導黾構件。因此能用*人 一 用；形成笔源供應導電構件之材料 非常有限。 相較之下，當破璃用於接合構 六社人· γ 稱什時，在接合邵分形成接 5構件之熱處理溫度可降至—較低溫度（WC或更 低）因而〜大為電源供應導電構件選擇材料之自由。 在密封構件或f狀構件是以㈣形成之情形下，若用一 種金屬銅銲材料做為標準接入禮 +按口構件時，因陶瓷之熱膨脹係 數小於金屬銅銲材料或類似材料，熱循環或類似情形所造 成1熱應力會集中在接合部分。因此若為接合構件選擇適 當種類之玻璃時’可使接合構件之熱膨脹係數大約相當於 200307337 形成管狀構件或類似物陶t之熱膨脹係數。如此可抑制孰 應力在接合部分之集中。從而可抑制熱應力所造成接合部 刀 <斷裂，從而可獲得有高可靠性之工件支持哭。 在按照本發明第一或第二方面之工件支持器；，可包括 提供之另-接合構件，接合密封構件與電源供應導電構件 〈部分可在其間提供—附加接合構件。該附加接合構件有 表面從密封構件表面之—部分伸至電源供應導電構件表 面之一部分，且該接合構件表面最好為一凹入彎月形。 、當該附加接合構件如上所述形成—彎月形時，應瞭解該 接合構件對該密封構件及該電源供應導電構件之表面有良 好之浸潤性。亦即，當該附加接合構件如上述有彎月形狀 時，在密封構件&電源供應$電構件間之接合部分即有高 氣密度。因此，可有效防止該接合部分發生漏戍。 门 、在按照本發明第一或第二方面之工件支持器中，該附加 接合構件可包括玻璃。 在此情形下，當用玻璃做為該附加接合構件之接合材料 時，在密封構件與電源供應導電構件間之接合部分處形成 該接合構件所用之熱處理可在較低溫度下（約或更 低）進行。因而增大為電源供應導電構件選擇材料之自由。 在按照本發明第一或第二方面之工件支持器中，該玻璃 可為ZnO-Si〇2-B2〇3基玻璃。200307337 (ii) Description of the invention:] The technical field to which the invention belongs The present invention relates to a support for holding a material such as a wafer that is processed in a processing device such as a semiconductor manufacturing device: This invention is called a workpiece holder or base), and a processing device using the same. The present invention particularly relates to a workpiece holder with excellent reliability for thermal cycling and a processing device having the same. [Prior art] Up to now, in the manufacturing steps of semiconductor devices, the film formation or etching process has been performed on the workpiece, that is, on the semiconductor substrate. The processing apparatus for processing such a substrate has a base, which is a holder for holding a semiconductor substrate in the processing of a semiconductor substrate. Such a conventional base is disclosed in Japanese Unexamined Patent Application Publication No. 7153706. However, the conventional base has the following problems. That is, in order to supply an inertial gas in a support table, a gas supply pipe must be provided for the base, and in addition, a "device required for supplying the inertial gas" such as a mass flow controller must be connected to the gas supply pipe. This complicates the structure of the base and increases the manufacturing cost of the base used as a work holder. Furthermore, the use of such a base 'requires the inertial gas to be directly supplied to the support table, which also increases the operating cost of the base. [Summary of the Invention] The object of the present invention is to provide an inexpensive workpiece holder capable of obtaining high reliability by avoiding damage caused by a reaction gas, and a processing device having the workpiece support -6-200307337. The workpiece holder of the present invention includes: a ceramic body having a circuit and capable of supporting a workpiece; a tubular member fixed to a rear end portion (first end portion) of the ceramic body; A sealing member that joins and divides a space in the tubular member into two regions; a region on the side of the first end portion (sealed region) and a region on the opposite side (opposite region); and The area edge protrudes, penetrates the sealing member to the edge of the sealed area, and is electrically connected to a power supply conductive member of a circuit on the ceramic body. The processing apparatus of the present invention includes the above-mentioned workpiece holder. The susceptor used in a semiconductor manufacturing apparatus must withstand severe processing conditions such as etching on a semiconductor substrate, and in addition, the susceptor must be inexpensive. By using the workpiece holder of the present invention, an inexpensive base can be obtained which can withstand the severe processing conditions in a semiconductor manufacturing apparatus. In the workpiece holder of the present invention, since the sealing member is placed in and joined to the tubular member supporting the ceramic body, the connection portion for the ceramic body circuit is connected to the power supply conductive member and can communicate with the environment around the workpiece holder. Separated. Therefore, the workpiece holder of the present invention is used for processing a workpiece such as a substrate, and the connecting portion can be prevented from being damaged by oxygen contained in the air existing in the tubular member. Therefore, it is not necessary to supply inertial gas to the space inside the tubular member as described above in order to avoid damage to the connection portion. This can reduce the cost of the workpiece holder. [Embodiment] A workpiece holder according to the first aspect of the present invention includes: a ceramic body having a circuit to support a workpiece; and a tubular member having an end portion (first end 200307337 portion) joined to the ceramic body; A sealing member placed in the tubular member and engaging with it and dividing a space in the tubular member into two regions: a region (sealed region) on the edge of the first end; and a sealing region on the opposite side An area (opposite area); and an edge extending from the opposite area to the edge of the sealing area, penetrating the sealing member, and electrically connected to a power supply conductive member of the circuit. The circuit in the ceramic body includes a heater circuit for heating a workpiece, an electrostatic electrode holding a workpiece on the ceramic body, or a radio frequency electrode for generating plasma. The material used to form this circuit can be tungsten or rhenium with low oxidation resistance. In addition, a material having a low oxidation resistance is also used in some cases as a power supply connector at a connection portion between the circuit and the power supply conductive member. Therefore, if the connection part between the power supply conductive member and the circuit is in the air, the circuit exposed in the tubular member is possible if the workpiece holder is heated and the semiconductor substrate or the like placed thereon is etched. Corroded by oxygen in the air. However, according to the present invention, the connecting portion for the ceramic body and the power supply member is located in an area surrounded by the sealing member, the tubular member, and the ceramic body (i.e., the above-mentioned sealing area). If a predetermined gas density is formed between the tubular member and the ceramic body and between the sealing member and the ceramic body, the portion (sealed portion) in which the above-mentioned connecting portion is located is an empty space surrounded by the sealed portion in the tubular member. On (hereinafter referred to as the enclosing area). Therefore, it is possible to prevent the circuit or the material forming the connection portion from being corroded by oxygen present in the environment inside the tubular member when performing a heat treatment such as etching. In addition, as described above, the sealing area is separated from the surrounding area because the sealing member is placed in the tubular member, and there is no need to provide a device for supplying inertial gas to the 200307337 tubular member as provided in the conventional device. Therefore, the structure of the workpiece supporting cry can be simplified and its manufacturing cost can be reduced accordingly. In addition, when the workpiece supports the processing-workpiece ', it is not necessary to continuously supply inertial gas to the tubular member, thereby reducing the running cost of processing using the above-mentioned workpiece holder. Furthermore, for the ceramic body, the tubular member, the sealing member, and the power-supply conductive member constituting the workpiece holder, selecting materials with appropriate thermal expansion that are not significantly different from each other can avoid localized thermal stress caused by changes in ambient temperature. By focusing on m, a highly reliable workpiece holder capable of coping with thermal hysteresis caused by a thermal cycle can be obtained. In the workpiece holder according to the first aspect of the present invention, it is preferable that the sealing member is capable of contacting the back surface of the ceramic body (the opposite side of the upper surface on which the wafer is to be mounted). In addition, in the workpiece holder according to the first aspect of the present invention, the sealing member can be joined to the surface of the ceramic body with a fixed engaging member provided therebetween. In this case, the sealing member itself does not need to have a large force because the ceramic The asset can support the sealing member. Thus, the thickness of the sealing member can be reduced. Therefore, the degree of freedom in designing the sealing member can be made large. In the work holder according to the first aspect of the present invention, the fixed joining member may be formed by heating the Qi joining material by applying a pressure of 100 g / em2 or more through the sealing member. Therefore, the number of small gaps in the fixed joint member is reduced, so that a joint portion having an excellent gas density can be obtained. In addition, the joining force of the ceramic body and the sealing member 2 can be increased at the same time.1 The force applied to the fixed joining member is set to 100 g / cm2 or more. The reason is that when the pressure is 100 g / cm2 or more, The airtight characteristics of the 200307337 fixed joint member can be increased, and the advantage of increasing the air density cannot be obtained when the pressure is less than 100 g / cm2. In the workpiece holder according to the first aspect of the present invention, the sealing member may be placed at a distance from the surface of the ceramic body. In this case, since the sealing member is not in contact with the ceramic body, the temperature distribution of the ceramic body can be prevented. Then, the contact between the sealing member and the ceramic body becomes uneven due to the contact with the sealing member. As a result, the temperature distribution in the ceramic body can be made more uniform, and therefore, the temperature distribution in the workpiece held on the ceramic body can be easily made uniform. In the workpiece holder according to the first aspect of the present invention, the area surrounded by the sealing member, the tubular member, and the ceramic body may be a vacuum or non-oxidizing environment. If so, oxidation of the power supply conductive member and the connection portion between the power supply conductive member and the circuit in the area can be effectively prevented. In the workpiece holder according to the first aspect of the present invention, the helium leakage rate from the area surrounded by the sealing member, the tubular member, and the ceramic body to other areas may be 1 (T8 Pa * m3 / s or less. If so When the helium leakage rate in the sealed area is set to a value within the above range, the oxidation of the power supply conductive member and the connection portion between the circuit and the power supply conductive member located in the area must be prevented. According to the first of the present invention An aspect of the workpiece holder may further include an engaging member provided at a joint portion between the tubular member and the sealing member. If so, the gap at the joint portion between the tubular member and the sealing member may be filled by the joint member. Therefore, the above-mentioned improvement may be made. The air density of the joint portion. Thus, the first region inside the tubular member can be exactly isolated from the outer region surrounding one of the workpiece holders 200307337. In the workpiece holder according to the first aspect of the present invention, the joint member can have a surface from the surface. A part of the inner surface of the tubular member extends to one of the surfaces of the sealing member, and the surface of the engaging member is preferably a concave meniscus When the joining member has the above-mentioned shape (so-called meniscus), it should be understood that the joining member has good wettability to the surfaces of the sealing member and the tubular member. That is, when the joining member has the concave meniscus shape. The joint part has a high air density. Therefore, leakage can be reliably prevented at the joint part. The workpiece holder according to the second aspect of the present invention includes a ceramic body having a circuit for supporting a workpiece; A tubular member on the back of the ceramic body; a power-supply conductive member electrically connected to a circuit inside the tubular member; and a sealing member placed inside the tubular member and fixed to the back of the ceramic body, which forms some of which are respectively sealed around the connection portions And the sealing member separates the sealed portion of these connecting portions from the environment surrounding the outer periphery of the sealing member. Thus, the connecting portions between the circuit in the ceramic body and the conductive member of the power supply are located in a sealed by The area enclosed by the component and the ceramic body. When the sealing area is formed between the sealing member and the ceramic body, it has a predetermined airtightness. The area in which the connecting portions are located is separated from a space surrounding the sealing member. Therefore, when a heat treatment such as etching is performed, it is possible to prevent the circuit from occurring or the material forming the connecting portions from being present in The problem of oxygen corrosion in the air in the tubular member. In addition, because the sealing member is placed in the tubular member and the above-mentioned connection portion is separated (sealed) from the area surrounding the sealing member, it is not necessary to install and supply inertia 200307337 gas to the tubular member The structure of the workpiece holder can be simplified and the manufacturing cost can be reduced. In addition, when processing (etching or similar processing) a workpiece with the workpiece holder, it is not necessary to supply inert gas into the tubular member. It can reduce the running cost of processing the Zhouyi workpiece holder. Furthermore, materials with little difference in thermal expansion coefficients between each other are used to form the ceramic body, tubular member, sealing member and power supply conductive member of the workpiece holder, which can be avoided. Such as the local concentration of thermal stress caused by changes in ambient temperature. Thus, it is possible to realize a workpiece holder having high reliability with respect to a thermal history such as a thermal cycle. In addition, since the sealing members are provided separately for the connection portion between the circuit and the power-conducting conductive member as described above, the size of each sealing member can be reduced. Therefore, the cost of the sealing member can be reduced. In addition, since the contact area between the sealing member and the ceramic body is reduced, the influence of the sealing member on the temperature distribution in the ceramic body can be reduced. Therefore, the temperature distribution in the ceramic body can be made more uniform, and the temperature distribution in the workpiece held on the ceramic body can be easily made uniform. In the workpiece holder according to the second aspect of the present invention, it is preferable that the environment in the area where each connection between the circuit and the power supply conductive member is located is a vacuum or non-oxidizing environment. In this case, oxidation of the power supply conductive member and the connection portions between the circuit and the power supply conductive member can be effectively prevented. In the workpiece holder according to the second aspect of the present invention, the helium leakage rate from the area in which the connection portion is located to other areas is preferably 1 (T8 Pa * m3 / s or less. In this case, the When the helium leakage rate is set at the above value, it can accurately suppress the oxidation of the power supply conductive member and the connection parts between the circuit and the power supply conductive member. The workpiece holder according to the second aspect of the present invention may further include a ceramic material provided. The joint member at the joint between the body and the seal member. In this case, the gap in the joint portion between the ceramic body and the seal member can be filled by the joint member. Therefore, the airtight characteristics of the joint portion can be improved. The region in which the connection portion between the circuit and the power-supply conductive member is located can be surely separated from the region surrounding the sealing member. In the workpiece holder according to the first or second aspect of the present invention, a bonding material can be passed through the sealing member. The bonding member is formed by applying a heat treatment at a pressure of 100 g / cm2 or more. In this case, the size of the bonding member can be reduced. The number of gaps can obtain a joint portion with excellent gas density. From the area surrounded by the sealing member, the tubular member, and the ceramic body, to the helium leakage rate in the other area where the connection portion between the circuit and the power supply conductive member is located It can be reduced (that is, the air density can be improved). In addition, the joining force between the joint portion between the tubular member and the seal member and the joint portion between the ceramic body and the seal member can be increased. Therefore, a more reliable joint portion can be obtained. The reason why the pressure applied to the bonding material is set to 100 g / cm2 or more is to reduce the helium leakage rate if the pressure is 100 g / cm2 or more, and it is difficult to reduce the helium if the pressure is less than 100 g / cm2 Leakage rate. In addition, in this case, the bonding material may contain glass. This glass-containing bonding material may be formed to have substantially the same shape as the bonding member by being ignited in advance. Then, the preheated bonding material is placed in a predetermined position and Heat treatment is performed. Therefore, the joining and sealing can be easily performed at the joining portion. 200307337 In the second aspect according to the present invention, the joining is reduced. The piece has a surface extending from a trowel on the back of the ceramic body to a portion of the surface of the sealing member, and the surface of the joining member is preferably a concave meniscus. In the above case, when the joining member is formed as described above: It should be understood that the joining member pour piece has good wettability to the surface of the to-be-sealed member and the ceramic body. That is, when the a'liangtianqiao 5 member has a concave meniscus, the joint portion has a high height. Gas density. It is ensured that leakage occurs at the joining part by the connection. In the first or the first member according to the present invention, glass may be included. In the mu holder, the material used for joining the member is the joining part. In the formation of the interface, the temperature of the heat treatment must be increased to uwc or higher. In this process, when the sealing member and the two 4 ^ 私 and the private / original supply conductive members are joined together in advance, it must be resistant to flying. Materials are used to form the power supply guide member. Therefore, it can be used by one person; the material for forming a pen source to supply conductive members is very limited. In contrast, when the broken glass is used to join the six members of the company, the heat treatment temperature of the five components formed during the joining process can be reduced to a lower temperature (WC or lower) and thus a large power source. Free choice of materials for supplying conductive members. In the case where the sealing member or f-shaped member is formed by cymbals, if a metal brazing material is used as the standard access ceremony + pressing member, the thermal expansion coefficient of the ceramic is less than that of the metal brazing material or the like, and the thermal cycle is The thermal stress caused by the similar situation will be concentrated on the joint. Therefore, if an appropriate type of glass is selected for the joining member, the coefficient of thermal expansion of the joining member is approximately equivalent to that of 200307337 forming a tubular member or the like. In this way, it is possible to suppress the concentration of 孰 stress in the joint portion. As a result, the joint < breakage of the joint due to thermal stress can be suppressed, and a workpiece with high reliability can be supported. In the workpiece holder according to the first or second aspect of the present invention, there may be provided an additional-joining member that joins the sealing member and the power-supply conductive member (a part may be provided therebetween-an additional engaging member. The additional engaging member has a surface extending from a portion of the surface of the sealing member to a portion of the surface of the power-supply conductive member, and the surface of the engaging member is preferably a concave meniscus. 2. When the additional bonding member is formed into a meniscus as described above, it should be understood that the bonding member has good wettability to the surface of the sealing member and the power supply conductive member. That is, when the additional joining member has a meniscus shape as described above, the joint portion between the sealing member & power supply member and the electric member has a high air density. Therefore, leakage at the joint portion can be effectively prevented. Door. In the workpiece holder according to the first or second aspect of the present invention, the additional engaging member may include glass. In this case, when glass is used as the bonding material of the additional bonding member, the heat treatment used to form the bonding member at the bonding portion between the sealing member and the power-supply conductive member may be performed at a lower temperature (about or lower) )get on. This increases the freedom to choose materials for the power supply conductive members. In the workpiece holder according to the first or second aspect of the present invention, the glass may be a ZnO-SiO2-B203-based glass.

Zn〇-Si〇2_B2〇3基玻璃之熱膨脹係數相當於陶瓷之熱膨 脹係數，且此種玻璃對陶瓷所製之管狀構件及密封構件有 良妤之可浸潤性。若以Zn0-Sl〇2_B2〇3基破璃用為接合構件 -15. 200307337 時可改善接合部分之氣密度及可靠性。 在按照本發明第一或第二方面之工件支持器中，該密封 構件可包括相當於形成管狀構件之材料。 、’· Λ卡_ τΤ乂 - 1 一 α-γγ^ 4- T lit /*L -rr 々/ΰ »1 n /*L r* rn —ϊ —. rm ·Μ n4-/ nP^ /-<r 社风^ TO 71，r 7 苽习傅TT汉$· 尺傅1T 3用喟孑日M芝ft膨/浓：1取 數之材料製成。因此，在密封構件與管狀構件間接合部分 處可抑制因形成密封構件與管狀構件材料之不同熱膨脹係 數所造成之熱應力集中。於是上述接合部分之可靠性可予 改善。 在按照本發明第一或第二方面之工件支持器中，該密封 構件可包括一種相當於形成該陶资體之材料。 在此情形下，密封構件及陶瓷體可用有相同熱膨脹係數 之材料製成。因此，在密封構件與陶瓷體間接合部分處可 抑制因形成密封構件與陶瓷體材料之不同熱膨脹係數所造 成之熱應力集中。於是上述接合部分之可靠性可予改善。 在按照本發明第一或第二方面之工件支持器中，該陶變; 體可包括氮化鋁。 氮化鋁對用以處理半導體基板之i氣有高度抗腐蝕性。 此外，氮化鋁所製陶瓷體之粒子產生率小於除氮化鋁外之 材料所製者之粒子產生率。再者，因氮化鋁之導熱性較高， 可使陶瓷體表面上（其上安裝有諸如一半導體基板工件之 表面）之熱分布一致。 在按照本發明第一或第二方面之工件支持器中，該電源 供應導電構件可包括一種鐵-鎳-鈷合金。 在上述鐵-鎳-姑合金與陶瓷間之熱膨脹係數差較小。因而 •16- 200307337 當形成電源供應導電構 工件# ϋ^ 干/、*封構件間接合邵分時及當該 在私源供應導電構件與密封構件 間4合邵分處所產生之熱應力可減小。 上述鐵♦料金對用於接合構件之玻璃有極佳可 ::力。因而可改善該電源供應導電構件與該密封構件間 接合部分之可靠性。 傅卞门 在按照本發明第一戋第- 及罘一万面之工件支持器中，該 供應導電構件可包括一A # 再干了匕括*展材料及一塗層。該基底材料可 含有選自包括鎢、鉬與彼等合 τ又土少一種。塗層則可 形成於該基底材料之表面上且可含有鎳與金中之至少一 種。此外’該塗層可為含有鎳及金中至少-種之鍍層。 在此υ下，形成基底材料之諸如鎢金屬之抗氧化力並 不特別優異，但在電源供應導電構件上施加—含有鍊或金 《至層可改善其抗氧化力。此外，上述形成基底之材料為 -種熱膨脹係數較低之金屬。因此當將電源供應導電構件 與密封構件接合起之處理中有熱施加至該接合部分 時’可減小因而產生之熱應力。 按照本發明第三方面之—種處理裝置包括按照本發明第 一或第二方面之工件支持器。 使用上述成本較為合理之高度可靠工件支持器可製造一 種高度可靠之處理裝置在其中可用低成本來處理諸如基板 之工件。 用於半導體製造裝置中之基座須以合理成本製造且能耐 得住諸如在半導體基板蝕刻處理中之嚴苛狀況。本發明之 •17· 200307337 工件支持器製造成本低且能耐得住用於在半導體製造裝置 中之嚴苛作業狀況。 貫例 下面將參照圖式說明本發明之實例。在下面之圖式中相 同或同等之構成元件以相同之符號指示且不再重複說明。 第一實例 圖！為按照本發明第一實例用於—處理裝置中工件支持 K斷面圖。圖2為圖1所示工件支持器-部分之放大斷面 圖。圖3為圖1所示工件支持器與圖2所示不同部分之放大斷 面圖。現參看圖1至3對本發明第一實例之支持器加以說明。 圖1至3所示為置於一處理裝置之小室中用做底座之-支 持器^它包括—陶资體2及—接合至陶资體2背面邊之管狀 構件6。、孩管狀構件6是以陶资製成。支持器！是在管狀構件 6底邯接合至該室之劈產― 、 又土表面（未不出）。該處理裝置可用為製 導體基板步驟中諸如_裝置或薄卿成裝置之半導 體製造裝置。 陶尤體2在其表面上保持一諸如半導體基板之工件。陶宪 ❸包括一陶资製之體基底3及埋入體基底3中包括電極4及 加熱電路5在内之-些電路。電極4可為-將諸如一基板之 ^牛保持於陶资體2表面上之抗靜電電極或為-用於處理 :::產生電漿之電漿產生射頻電極。此外，抗靜電電極 及廷桌產生電極均可形成於陶瓷體2中。 = 至7e連接至電極4之電路及加熱電路5。這些 h电接Θ 7a_^ 7c是以諸如金屬之導電材料所製且埋入陶资 -18· 200307337 體2中。供電接頭以至乃每個之一端在管狀構件6内陶瓷體〕 之表面處露出。用做電源供應導電構件6之接頭邊電極、=8 與對應之供電接頭7a至7c接觸。該等接頭邊電極8在連接部 分10以金銲衬料17連接至對應之電源邊電極線9。可用鎳做 為電源邊電極線9之材料。在接頭邊電極線8與電源邊電極 線9間可用螺絲旋入結構做為接頭結構。例如，在接頭邊電 極線8之一末端部分形成一螺紋部分，並在電源邊電極線9 < 一末端形成一該螺紋部分***及固定於其中之螺紋孔， 忒末场邵分與該接頭邊電極線8相對。接下來可將螺紋部分 ***螺紋孔並旋緊而使接頭邊電極線s與電源邊電極線9連 接並固定於一起。 在接頭邊電極線8與電源邊電極線9間之連接部分1〇中， 噙圖2所不，在電源邊電極線9末端部分中形成末端開口部 15接頭邊電極線8之末端部分（與連接至供電接頭7a至 7c末端相對之末端部分）被***這些對應之末端開口部分 15且如上述之情形，該金銲材料17被填入該等末端開口 部分1 5中。 此外’在官狀構件6内有一陶瓷製之密封構件11放置在位 於接頭邊電極線8與電源邊電極線9間連接部分1〇上方一區 域内。在計劃圖中該密封構件11之形狀為大約相當於朝著 入^狀構件6延伸方向垂直方向之管狀構件之内周邊。此 外在欲封構件11内形成複數個開口丨2。接頭邊電極線8則 放置成通過這些開口丨2。 接頭邊電極線8與密封構件11在開口 12處以一附加之接 -19- 200307337 合構件用坡璃13固令、人 , 、 疋万《一起。玻璃13用做填起成為接合部 刀（開口 1 2 <始、封材料而使被管狀構件ό所圍繞之一密封 區（在&狀構，牛6中第_末端部分邊内之—空間）、密封構件 1 w人丨巧瓦I孩密封構件將之與其他區域（與管狀構件 6中該密封區相對之相對區及圍繞支持器丨外周邊之外空間） 隔開。此外，密封構件11與管狀構件6以用為一接合構件之 玻璃13互相接合並固^於_起。因而密封構件η可將管狀 構件6内（②封區與管狀構件内相料該密封區之相對區 隔開。再者，用做電源供應導電構件之接頭邊電極線8從該 相對區伸出透過開口12穿過密封構件η而至管狀構件6内The thermal expansion coefficient of Zn〇-Si〇2_B2 03-based glass is equivalent to the thermal expansion coefficient of ceramics, and this glass has good wettability to the tubular members and sealing members made of ceramics. If Zn0-Sl02_B2 03-based glass breaking is used as the bonding member -15.200307337, the gas density and reliability of the bonding portion can be improved. In the workpiece holder according to the first or second aspect of the present invention, the sealing member may include a material equivalent to forming a tubular member. , '· Λ CARD_ τΤ 乂-1 -α-γγ ^ 4- T lit / * L -rr 々 / ΰ »1 n / * L r * rn —ϊ —. Rm · Μ n4- / nP ^ /- < r She Feng ^ TO 71, r 7 Xi Fu TT Han $ · Rule Fu 1T 3 Made from the following day M ft expansion / concentration: 1 material. Therefore, at the joint portion between the sealing member and the tubular member, the thermal stress concentration due to the formation of different thermal expansion coefficients between the materials of the sealing member and the tubular member can be suppressed. Therefore, the reliability of the above-mentioned joint portion can be improved. In the workpiece holder according to the first or second aspect of the present invention, the sealing member may include a material equivalent to forming the ceramic body. In this case, the sealing member and the ceramic body may be made of a material having the same thermal expansion coefficient. Therefore, at the joint portion between the sealing member and the ceramic body, it is possible to suppress thermal stress concentration caused by forming different thermal expansion coefficients of the sealing member and the ceramic body material. Therefore, the reliability of the above-mentioned joint portion can be improved. In the workpiece holder according to the first or second aspect of the present invention, the ceramic body may include aluminum nitride. Aluminum nitride is highly resistant to the gases used to process semiconductor substrates. In addition, the particle generation rate of ceramic bodies made of aluminum nitride is smaller than that of materials made of materials other than aluminum nitride. Furthermore, due to the high thermal conductivity of aluminum nitride, the heat distribution on the surface of the ceramic body (the surface on which a workpiece such as a semiconductor substrate is mounted) can be made uniform. In the workpiece holder according to the first or second aspect of the present invention, the power supply conductive member may include an iron-nickel-cobalt alloy. The difference in thermal expansion coefficient between the aforementioned iron-nickel-alloy and ceramic is small. Therefore • 16- 200307337 The thermal stress generated when the power supply conductive structure workpiece # 干 干 is dry and the joint between the sealing member and the joint between the conductive member and the sealing member of the private source can be reduced small. The above-mentioned iron material has excellent strength for the glass used for joining members. Therefore, the reliability of the joint between the power-supply conductive member and the sealing member can be improved. Fu Yimen In the workpiece holder according to the first and second aspects of the present invention, the supply conductive member may include an A # re-dried material and a coating. The base material may contain one selected from the group consisting of tungsten, molybdenum, and others. The coating may be formed on the surface of the base material and may contain at least one of nickel and gold. In addition, the coating layer may be a plating layer containing at least one of nickel and gold. In this case, the oxidation resistance of a base material such as tungsten metal is not particularly excellent, but the application of a conductive layer containing a chain or gold to the power supply conductive member can improve its oxidation resistance. In addition, the above-mentioned substrate-forming material is a metal having a low thermal expansion coefficient. Therefore, when heat is applied to the joining portion in the process of joining the power-supply conductive member and the sealing member, the thermal stress generated thereby can be reduced. A processing apparatus according to a third aspect of the present invention includes a workpiece holder according to the first or second aspect of the present invention. The use of the above-mentioned highly reliable workpiece supporter at a reasonable cost makes it possible to manufacture a highly reliable processing device in which a workpiece such as a substrate can be processed at a low cost. Substrates used in semiconductor manufacturing equipment must be manufactured at a reasonable cost and be able to withstand severe conditions such as in semiconductor substrate etching processes. According to the present invention, the manufacturing cost of the workpiece holder is low and can withstand the severe operating conditions used in semiconductor manufacturing equipment. Example An example of the present invention will be described below with reference to the drawings. In the following drawings, the same or equivalent constituent elements are indicated by the same symbols and will not be described repeatedly. The first example Figure! A cross-sectional view of a workpiece support K in a processing device for a first example of the present invention. FIG. 2 is an enlarged cross-sectional view of the workpiece holder-part shown in FIG. 1. FIG. Fig. 3 is an enlarged sectional view of a different part of the workpiece holder shown in Fig. 1 and that shown in Fig. 2. A support according to a first embodiment of the present invention will now be described with reference to Figs. Figures 1 to 3 show a supporter which is placed in a chamber of a processing device and used as a base. It includes-a ceramic body 2 and-a tubular member 6 joined to the back side of the ceramic body 2. The tubular member 6 is made of ceramics. Supporter! It is the splitting of the tubular member 6 that is joined to the chamber-and the soil surface (not shown). This processing device can be used as a semiconductor manufacturing device such as a device or a thin-walled device in the step of manufacturing a conductive substrate. The ceramic body 2 holds a workpiece such as a semiconductor substrate on its surface. Tao Xianxuan includes a ceramic substrate 3 and some embedded circuits including electrodes 4 and heating circuits 5 in the substrate 3. The electrode 4 may be-an antistatic electrode holding a substrate such as a substrate on the surface of the ceramic body 2 or-a plasma electrode for processing ::: plasma-generating radio-frequency electrodes. In addition, both an antistatic electrode and a table-generating electrode can be formed in the ceramic body 2. = To 7e The circuit connected to electrode 4 and heating circuit 5. These h electrical connections Θ 7a_ ^ 7c are made of a conductive material such as a metal and buried in a ceramic material -18 · 200307337 body 2. The power supply connector and even one end are exposed at the surface of the ceramic body in the tubular member 6. Used as the terminal electrode of the power supply conductive member 6, = 8 is in contact with the corresponding power supply terminals 7a to 7c. The joint side electrodes 8 are connected to the corresponding power side electrode wires 9 at the connection portion 10 with gold solder lining 17. Nickel can be used as the material of the side electrode line 9 of the power source. A screw-in structure can be used as the joint structure between the joint-side electrode wire 8 and the power-side electrode wire 9. For example, a threaded portion is formed at one end portion of the side electrode wire 8 of the joint, and a threaded hole into which the threaded portion is inserted and fixed is formed at one end of the power side electrode wire 9 and the end field is divided into the joint. The side electrode wires 8 are opposed. Next, the threaded portion can be inserted into the threaded hole and tightened so that the joint-side electrode wire s and the power-supply side electrode wire 9 are connected and fixed together. In the connection portion 10 between the joint side electrode line 8 and the power side electrode line 9, as shown in FIG. 2, a terminal opening 15 is formed in the end portion of the power side electrode line 9 (the end portion of the joint side electrode line 8 (and The opposite end portions connected to the ends of the power supply terminals 7a to 7c) are inserted into these corresponding end opening portions 15 and, as in the case described above, the gold solder material 17 is filled in the end opening portions 15. In addition, a sealing member 11 made of ceramics is placed in the official member 6 in a region above the connecting portion 10 between the terminal-side electrode line 8 and the power-side electrode line 9. The shape of the sealing member 11 in the plan view is approximately equivalent to the inner periphery of the tubular member perpendicular to the extending direction of the entrance member 6. In addition, a plurality of openings 2 are formed in the member 11 to be sealed. The connector side electrode wires 8 are placed through these openings 2. The joint edge electrode wire 8 and the sealing member 11 are connected at an opening 12 with an additional connection. The glass 13 is used as a fillet knife (opening 1 2 < starting and sealing material so as to be surrounded by a tubular member in a sealed area (in the & structure, the 6th end portion of the cow 6- Space), the sealing member, the sealing member is separated from other areas (the area opposite to the sealing area in the tubular member 6 and the space surrounding the outer periphery of the holder). In addition, the sealing The member 11 and the tubular member 6 are bonded to each other and fixed to the glass 13 used as a bonding member. Therefore, the sealing member η can be inside the tubular member 6 (② the sealing area and the inside of the tubular member are opposite to the sealing area. Furthermore, the side electrode wire 8 of the connector used as a power supply conductive member protrudes from the opposite area through the opening 12 and passes through the sealing member η to the inside of the tubular member 6

之β山封區且透過该供電接頭7&至&連接至電極4及加熱 電路5。 ’ N 位於密封構件11與接頭S電極線8間接合部分之玻璃13 ^位於密封構件11與管狀構件6間接合部分之玻璃13形成 弓月形碍刀14。上述之彎月形部分14是在玻璃13對密封構 件11、接頭邊電極線8及管狀構件6表面之可浸潤力最佳時 所形成。#彎月形部分14如上述情形形成時，接合部分即 有高度可靠性且不大可能發生漏戌。 位於密封構件11與接頭邊電極線8間接合部分之玻璃13 及位於妆封構件11與官狀構件6間接合部分之玻璃丨3可藉 透過密封構件11對玻璃13施加一 1〇〇 g/cm2或更大壓力之熱 處理來形成。按照該項處理，坡璃丨3中之小間隙數目可減 少。因而除改善氣密特性外，含有玻璃13之接合部分之接 合力亦可改善。 200307337 -種低抗氧化力之材料，諸如鎢或鉬，被用為形成加埶 電路5或電極4之材料。同樣地在某些情形下用低抗氧化材 料製造供電接頭7仙。在本發明之支持器”，陶咖 之接頭邊電極線8與加熱電路5或類似物之供電接頭間之連 接部分是位於被密封構件u、管狀構件6及陶资體2所包固 之密封區内（管狀構件第—末端部分邊之區域）。因此，若管 狀構件6與陶资體2間之接合區、管狀構件6與密封構件_ 《接口區及4封構件i!與接頭邊電極線8間之接合區被形 成而使得有預定之氣密度時，接頭邊電極線8與用於加敎電 路5及類似物之供電接頭W之連接部分位於其中之區域即 變為與圍繞支持器1之環境（其他區則。因而當進行諸如 姓刻處理時可防止發生各連接部分及用於加熱電路5及電 極4之供電接頭7被存在於支持器！周圍環境中之反應氣體 所腐蚀。 此外，因在封構件11是置於管狀構件6内而使上述之第— =亦即在管狀構件6中第—末端部分邊之區域，與除上述 2區外4域隔開’在過去曾用於供應慣性氣體至管狀 構件6中之器具已盔雲| ^ 、支持斋1之結構較之過去已予 間化，製造成本可以減少。料，當半導体基板，亦即— 用支持器1加以處理時（_或類似處理），不必再繼 ::、應慣性氣体至管狀構件6中，因而使用支持器! 避行成本。 :者，右選擇熱膨脹係數相差不大之適當材料做為形成 H之H體2、管狀構件6、密封構件11及接頭邊電極 -21 - 200307337 Γ中 =可抑制發生因環境溫度改變所造成熱應力局部 於是可獲得對_循環所造成熱磁滞有高度 可罪性乏支持器〗。 j门反 杜圖Ϊ至3戶斤子士士 ·.一-. ㈣構和是[於離陶走 7、 離處’岔封構件11並未與之接觸。於是 ==密封構件11與陶⑽觸而崎體艸溫 之一致性。H因此可進—步改陶€ff 2中溫度分布 因用做接合構件之玻璃13是提供在管狀構件 件Π間之接合料，㈣構和好狀料6間 = 細填起。因此可改善上述接合部分之氣密特性。 料，因破璃U之熱膨脹係數較金銲材料或類似物者為 低，純各種材料中選擇適當類型玻璃13用於接合構件， 可使玻璃13之膨脹係數大致相t於形成管狀構件6之 者。於是可抑制接合部分熱應力之集中。 如圖3所示，玻璃13有一表面從管狀構件6表面之一部分 伸至㈣構件11表面之-部分，且該破财-凹人斷面形 狀（形成所謂之弯月形部分14)。上述之彎月形部分 璃Π對管狀構件认密封構㈣之表面有良好可浸潤性= 而形成。亦即’當接合構件有凹入彎月形時，該接分 即有高氣密度。 刀 此外，在圖1至3所示之支持器1中，_3是在密封構件 11與接頭邊電極線8間之接合部分提供為—附加 件。如圖2所示，玻璃13有—表面從密封構件n表面之 •22· 200307337 分伸至接頭邊電極線8表面之一部分，且玻璃13之表面為一 凹入彎月形（形成一弯月形部分14)。當上述彎月形部分14 形成於玻璃13表面上時，應暸解玻璃13對密封構件及接 峡邊电性線8之表面有良妤可浸潤性。亦即，當形成上述彎 月形部分14時，密封構件u與接頭邊電極線8間之接合部分 即有高度氣密特性。此外，當玻璃13被用為該另一接合構 件時，可用較低溫度（約1000^或更低）在密封構件n與接 頭邊電極線8間之接合部分進行提供玻璃13之熱處理步 驟。因而可使選擇形成接頭邊電極線8之材料有更大自由。 可能用ZnCUSl〇d〇3_基玻璃做為玻璃1 3。Zn〇-Sl〇2-B2〇3- 基玻埸之熱膨脹係數相當於陶瓷之熱膨脹係數且對陶瓷所 衣< s狀構件6及密封構件丨丨有極佳可浸潤性。所以若用The β mountain sealed area is connected to the electrode 4 and the heating circuit 5 through the power supply connector 7 & to &. ′ N The glass 13 located at the joint portion between the sealing member 11 and the electrode S electrode wire 8 ^ The glass 13 located at the joint portion between the sealing member 11 and the tubular member 6 forms a bow-shaped knife 14. The above-mentioned meniscus portion 14 is formed when the wetting force of the glass 13 to the sealing member 11, the electrode-side electrode wire 8, and the tubular member 6 is optimal. When the meniscus portion 14 is formed as described above, the joint portion is highly reliable and leakage is unlikely to occur. The glass 13 located at the joint portion between the sealing member 11 and the electrode side electrode wire 8 and the glass located at the joint portion between the makeup sealing member 11 and the official member 6 can be applied to the glass 13 through the sealing member 11 with a 100 g / It is formed by heat treatment with a pressure of cm2 or more. According to this treatment, the number of small gaps in slope glass 3 can be reduced. Therefore, in addition to improving the airtight characteristics, the joint strength of the joint portion containing the glass 13 can also be improved. 200307337-A material with low oxidation resistance, such as tungsten or molybdenum, is used as the material to form the dysprosium circuit 5 or electrode 4. Similarly, in some cases, low-oxidation-resistant materials are used to make the power connector 7 cents. In the "supporting device of the present invention", the connection part between the joint electrode wire 8 of the ceramic pottery and the power supply connector of the heating circuit 5 or the like is the seal enclosed by the sealing member u, the tubular member 6 and the ceramic body 2. Area (the area on the edge of the first-end portion of the tubular member). Therefore, if the joint area between the tubular member 6 and the ceramic body 2, the tubular member 6 and the sealing member _ "Interface area and 4 sealing members i! And joint edge electrode When the junction area between the wires 8 is formed so that a predetermined air density exists, the area where the connection portion of the joint-side electrode wire 8 and the power supply connector W for adding the circuit 5 and the like is located becomes and surrounds the holder The environment of 1 (other areas. Therefore, it is possible to prevent the connection parts and the power supply connector 7 for the heating circuit 5 and the electrode 4 from being present in the holder when the processing such as the last name is performed! The reaction gas in the surrounding environment is corroded. In addition, because the sealing member 11 is placed in the tubular member 6, the above-mentioned, ie, the region at the edge of the -end portion of the tubular member 6, is separated from the 4 domains except the above 2 regions. For supplying inertial gas to The device in the shape-like member 6 has been clouded | ^, and the structure supporting Zhai 1 has been interspersed compared with the past, and the manufacturing cost can be reduced. It is expected that when the semiconductor substrate, that is,-is processed with the holder 1 (_ or similar Treatment), there is no need to continue ::, inertial gas should be intruded into the tubular member 6, so use the support! Avoid the cost.:, Right, choose the appropriate material with a small thermal expansion coefficient difference as the H body 2, forming the H Component 6, sealing component 11 and joint side electrode -21-200307337 Γ Medium = can inhibit the occurrence of thermal stress caused by changes in ambient temperature. Therefore, a lack of support for thermal hysteresis caused by cycling can be obtained.门 门 反 杜 图 Ϊ to 3 households taxis ..--. ㈣structive and is [于 离 陶 走 7, away from the 'fork seal member 11 did not contact it. So = = seal member 11 and pottery ⑽The temperature consistency of the body is touched. Therefore, the temperature distribution in the ceramic can be changed further. The temperature distribution in the glass is used as the joining member. The 13 is the joining material between the tubular members, the structure and the shape. Material 6 = fine filling. Therefore, the airtightness of the above joints can be improved. Because the thermal expansion coefficient of the broken glass U is lower than that of the gold welding material or the like, the selection of an appropriate type of glass 13 for the joining member among pure materials can make the expansion coefficient of the glass 13 approximately equal to that of the tubular member 6 As a result, the concentration of thermal stress in the joining portion can be suppressed. As shown in FIG. 3, the glass 13 has a surface extending from a portion of the surface of the tubular member 6 to a portion of the surface of the concrete member 11. Meniscus part 14). The above meniscus part glass has good wettability to the surface of the tubular member, and is formed. That is, when the joining member has a concave meniscus, the connection In addition, in the holder 1 shown in Figs. 1 to 3, _3 is provided as an additional part at the joint portion between the sealing member 11 and the joint edge electrode wire 8. As shown in FIG. 2, the glass 13 has a surface extending from • 22 · 200307337 on the surface of the sealing member n to a part of the surface of the electrode electrode line 8 on the side of the joint, and the surface of the glass 13 is a concave meniscus (forming a meniscus)形 部分 14). When the above-mentioned meniscus-shaped portion 14 is formed on the surface of the glass 13, it should be understood that the glass 13 has good wettability to the sealing member and the surface of the isthmus electrical line 8. That is, when the above-mentioned meniscus-shaped portion 14 is formed, the joint portion between the sealing member u and the terminal-side electrode wire 8 has a highly air-tight characteristic. In addition, when the glass 13 is used as the other joining member, a heat treatment step of providing the glass 13 may be performed at a joining portion between the sealing member n and the terminal-side electrode line 8 at a lower temperature (about 1000 ° or less). Therefore, there is greater freedom in selecting a material for forming the terminal electrode line 8. It is possible to use ZnCUS10d03-based glass as the glass 13. The thermal expansion coefficient of Zn〇-Sl02-B2 03-based glass is equivalent to that of ceramics and has excellent wettability to ceramic clothes < s-like member 6 and sealing member. So if you use

ZnO-SKVL基玻璃做為玻仙時，可改善該接合部分之 氣後、度及可靠性。 此外，形成密封構件Η之材料可含有與形成管狀構件_ 同（材料。當如此選擇材料時，密封構件u可用其教膨服 係數大致相當於管狀構件6熱膨脹係數之材_成1是可 防止因密封構糾與管狀構件6材料間之熱膨脹係數差而 造成在密封構们！與管狀構件6間接合部分之熱應力集中。 種形成密封構件11之材料可▲右 口有用万；形成陶瓷體2之 月反基底3之相同材料。 ^上述;!形下，密封構件11與陶技2可《膨脹係數互 相大致相*之材料形成。因此， q在封構件11與陶瓷體2如 下又中本枭明第三實例所述支持哭1 口 a° < h形疋直接接合於 •23- 200307337 2時’可防止因密封構件”與陶资體2材料之熱膨脹係數 差而使熱應力在接合部分之集中。 一種用於形成陶瓷體2之骨#其念2u Η 〆 且基展3(材料可含有氮化鋁。 鼠化銘有對處理半導體基板所用由化氣體之高抗韻性。此 外，、含氮化銘之陶竞體2顯示出有較含其他材料之陶资體為 低〈粒子產生率。再者，因氮化鋁之熱傳導係數較高，可 使陶€體2表面上（其上安裝有諸如—半導體基板工件之表 面）之溫度分布一致。 域=:;封構件u、管狀構件6及陶竞體2所包圍之區 域最好在—真空或非氧化狀態中。在此㈣下，可有效抑 制位述區域内接頭邊電極線8,或接頭邊電極線8與用 於加熱電路5或電極4之供電接頭間之連接部分發生氧化。 一種離子-鎳·始合金可用於形成接頭邊電極線8之材料。 在此情形下，離子'鎳-鉛合金之熱膨脹係數與㈣者相差不 大.因此’ *陶资所製接頭邊電極線8與密封構件11間之接 合部分被形成及當φw 電極線《密封構;錢時，可㈣在接頭邊 稱件11間接合邵分產生之熱應力^外，上 述離子务姑合金對用為接合構件之破璃有極佳可浸潤 性。因而可改善接頭邊電極線8與密封構件η間接合部分之 可靠性。 用為電源供應導泰接μ、r & 包構件I接頭邊電極線8可包 嫣、鈿及彼等^金切職少-種之基㈣料及一電鐘 層，=，成於該基底材料上且用做含有錄與金至 广種^層°在此情形下’陶资與上述形成基底材料之 •24· 200307337 金屬間<熱膨脹係數差較小。於是當接頭邊電極線8與密封 構件11間之接合邵分形成時，因接頭邊電極線8與密封構件 11間膨脹係數差而在該接合部分產生之熱應力集中可被抑 從始、封構件11、管狀構件6及陶瓷體2所包圍之密封區至 其他區之氦漏洩率最好為10-8 Pa.m3/S或更小。在此情形 下，位於該密封區内之接頭邊電極線8及接頭邊電極線8與 用於加熱電路5及電極4之供電接頭間連接部分之氧化可確 實被抑制。 當圖1至3所示之支持器m用於處理半導體基板之處理 ，置時，T用低成本來處理該半導體基板，除此之外且可 貫現具有高可靠性之處理裝置。 第二實例 圖4為按照本發明第二實例一支持器之斷面圖。現將參照 圖4對本發明第二實例之支持器加以說明。 如圖4所示，本實例之支持器}有基本上與圖⑴所示相 當之結構；但-用以界定密封構糾位置之突出部Μ形成 於管狀構件6之内壁上。在密封構件u之—末端部分對著此 —突出㈣壓下之同時’管狀構件6與密封構件以提供於 其間之玻璃13接合及固定在一起。 按照上述結構，可獲得圖⑴所示支持器i之相同優點， 且同時因有該突出㈣，管狀構件6與密封構件_對之區 域可增大。因而可增加管狀構件6與密封構件u間接合部分 之可靠性。因此可有效減小漏线產生率。 •25- 200307337 第三實例 圖5所不為按照本發明第三實例支持器之斷面圖。現 照圖2本發明第三實例之支持器加以說明。 ， S 7汙本夏們|支持器I之結構基本上相當於圖i至3 所迷者，但密封構件π放置之位置則不同。亦即，密封構 件〗1疋置於管狀構件6内而與陶瓷體2之背面密切接觸。 外如此置放之密封構件11是以玻璃1 3固定至管狀構 件6及接頭邊電極線8。 /安照上述結構可獲得圖1至3所示支持器1同樣之優點且 同時因密封構件！！與陶㈣2之背面接觸，陶资體2可保持 密封構件11。因此可減小密封構件11之厚度。於是使得設 計密封構件11有更大自由。 此外，、在上述情形中，提供用為在陶资體2與密封構件η 間一固疋接合構件之玻璃可將陶资體2與密封構件^接人 於-起。因此可獲得圖4所示支持器】之相同優點。此外： 提供於陶资體2與密封構件U間之玻璃可藉透過密封構件 11邊施加-1〇〇 g/cm2或更大之壓力所進行之熱處理來形 成。在此情形下’因小間隙可被破璃除去，在陶资體2與密 封構件11間接合部分之氣密度可改善且除此之外亦可改呈 其接合力。 ° 第四實例 圖6為本發明第四實例支持器之斷面圖。圖7為顯示圖6 支持器-部分之斷面圖。現參照圖6與7對本發明第四實例 之支持器加以說明。 -26 - 200307337 如圖6與7所示’用做半導體製造裝置基座之支持哭卜直 結構基本上相當於圖5所示者，但密 、- 6)則與之不同。亦即，在圖⑻ < 結構(見圖 是置於管狀構件6内_.、二Ϊ中，密封構件21 鸣丨工川為電源供應導電構件之接藏 邊電極線8與諸如電極4及加熱電路5之電路間連接部分之、 周邊。密封構件2丨以玻璃13接合並固定至含有氮化銘之陶 贫體表面。此外，接頭邊電極線8放置在密封構件21内 (密封構件21内之—開口部分），且玻璃13被提供於接頭邊電 極線8與密封構件21間做為另—接合構件。使用—種用於接 頭邊電極線8之材料鐵-鎳_鈷合金。密封構件21將接頭邊電 極線8與加熱電路5及電極4之連接部分與圍著密封構件 周邊之環境隔開。 用為該另一接合構件之玻璃13有一表面從密封構件以表 面之一部分伸至接頭邊電極線8表面之一部分，且玻璃13為 一凹入斷面形狀（形成所謂之彎月形）。因此如本發明第一實 例支持器1之情形，可藉在密封構件21與接頭邊電極線8間 接合部分處之玻璃13而獲得高度氣密度。 此外，在圖6與7所示之支持器1中，接頭邊電極線8與陶 瓷體2之電路，諸如用於加熱電路5及電極4之供電接頭，間 之連接部分即位於被密封構件21及陶瓷體2所圍之區域 内。當密封構件21與陶瓷體2間之接合部分是以玻璃1 3形成 而有一預定氣密度且密封構件21與接頭邊電極線8是以玻 璃13固定於一起時，連接部分位於其中之區域即與圍繞密 封構件21周邊之環境隔離。因此如本發明第一實例之情形 •27- 200307337 可防止發生當進行諸如蝕 接部分之材料被管狀構件6或類等電路或形成連 氧腐蝕之問題。 内所存在芝氣中之 Μ山〜傅什Z 1是置於管狀丨一 分與圍著密封構件21周邊 °r且上返連接部， 丄Μ您义區域隔離（宓 應慣性氣體至管狀構件6内 t k所用供 1之結構被簡化，其製造成本也可降低。此外，、當以支t 1對:工件進行姓刻或類似處理時，不必連續供應慣性= \官狀構件6中’因而使用該支持器1可減低運行成本。a 熱膨脹係數相差不大之材料可用為陶资體2、密封構件 2卜接頭邊電極線8及電源邊電極線9之材料。在此情形下， 了防止由於周圍溫度改變而在密封構件2ι與陶资體2材料 間接合部分之熱應力集中。 如上所述，因密封構件21每個均係為接頭邊電極線8盘諸 如加熱電路5及電極4等電路間之每一連接部分所提供，密 封構件21之大小可予以減小。因而密封構件21之成本亦〇 減低。此外，因陶瓷體2與密封構件21互相接觸之區域可減 小，密封構件21對陶瓷體2内溫度分布之影響可減小。於是 因陶瓷體2内之溫度分布可更為一致，置於陶瓷體2上諸如 一半導體基板之工件之溫度分布亦可一致。 在圖6與7所示之支持器1中’玻璃13被填入接頭邊電極線 8與用於加熱電路5及電極4間之連接部分處而做為接頭邊 電極線8與密封構件2 1間之一附加接合構件。在此情形下， 只要密封構件21與接頭邊電極線8在密封構件21底部確實 -28 - 200307337 接合在-起並被密封’在密封構件21之中央或上部有一間 隙可形成於在封構件21之内壁與接頭邊電極線8間。該間隙 最好應為真空或非氧化環境。在此情形下，可有效防止接 頭邊電極線8及接頭邊電極線8與諸如加熱電路5電路間之 連接部分被氧化。 在支持π 1中k接頭邊電極線8與諸如加熱電路5間連接 邵分位於其中之區域至密封構件21所包圍區域之氦漏洩率 最好為l(r8Pa.m3/s或更小。在此情形下，位於密封構件21 内接顽邊包極線8及在接頭邊電極線8與用於加熱電路5或 類似電路供電接頭間連接部分之氧化可被確實抑制。 在支持叩1中，在陶瓷體2與密封構件21間之接合部分處 可提供用為接合構件之坡璃。在此情形下，密封構件_ 陶瓷2間之間隙可由該破璃填起。因而該接合部分之氣密 度可予改善。 如圖6與7所示，用為接合構件之玻璃13有一表面從陶瓷 面之一邯分伸至密封構件21表面之一部分，且玻璃η 之表四為一凹入彎月形。在此情形下，要暸解玻璃I〕對密 封構件2!及陶资體2之表面有良好可浸潤性而使密封構件 21及陶瓷體接合部分有高氣密度。因此一定可防止該接 合部分產生漏戌。 與本發明第一實例中之情形相同，〜〇_^〇2_；62〇3_基玻璃 可用做破璃13 ^此外，形成密封構件21之材料可含有相當 万；形成言狀構件6之材料。再者，形成密封構件21之材料可 含有形成陶瓷體2之材料。 -29 - 200307337 圖8為按照本發明第四實例圖6與7所巾支持器^第— 例讀面圖。圖9為圖8所示工件支持器一部分之斷面圖。 ^參看圖8與9對本發明第四實例支持器之第-修改例加以 說明°* 如圖8與9所示，用做半導體製造裝置底座之支持器…士 構除用於將密封構件21接合至陶资體2之玻璃13之形心 同外，基本上相當於圖6與7中所示支持器】之結構。亦即， 在圖8與9所示支持器1中，玻璃13是提供在密封構件21與陶 竟體2之間。料，破璃13被放置成圍住並密封接頭邊電極 泉供e H7a至7e間之連接區。再者，在密封構件21盘 接頭邊電極線8間有-並未提供破璃U之空間。亦即，在密 封構件21與接頭邊電極線8間，玻璃13僅被提供於陶&體2 邊。此一結構可提供與圖6與7所示支持器丨同樣之優點。 在將玻璃13固定於支持器i内之熱處理中，最好透過密封 構件21對玻璃13施加—壓力。在此情形下，最好從密封構 件21邊對玻璃13施加-1GG g/em2或更大之壓力。於是玻璃 13與陶瓷體2、密封構件21或接頭邊電極線8間介面處所出 現小間隙之數目可減少或除去。因而從電接頭7丑至&與接 頭邊電極、線8間之連接部分位於其中之每個區域之氦漏洩 率可降低，亦即氣密度可改[此外，當施加—⑽g/cm2 或更大之壓力時，可獲大致相當於第四實例中之優點；但 當壓力小於100 g/cm2時則無法獲得減小氦漏洩率之重大效 果。 圖10為按照本發明第四實例圖6與7所示支持器丨第二修 -30- 200307337 改例之斷面圖。圖n為圖10所示工件支持器一部分之斷面 圖。現參照圖1 〇與π對本發明第四實例支持器之第二修改 例加以說明。 如圖10與Ii所示，甩做半導體製造裝置底座之支持器^之 結構除陶瓷體2表面形狀不同外基本上相當於圖8與9所示 支持器1者。亦即，在圖10所示支持器】中，在陶瓷體2背面 邊形成二個槽25(見圖11)。在計劃圖中槽25之形狀可為一圓 形或多邊形。此外，在槽25之底壁處，曝露供電接頭乃至 乃。供電接頭73至乃曝露於槽25之底壁且連接至對應之接 頭邊電極線8。密却構件21及玻璃13被提供於供電接頭h至 7c與接頭邊電極線8間連接部分之周圍，與圖8與9所示支持 器1之情形同。 、 如此形成<結構提供相當於圖8與9所示支持器1之優 ‘”、占此外，因供電接頭7a至7c與接頭邊電極線8間之連接部 分疋置於槽25内，若於橫向對接頭邊電極線8施加一應力 (亦即，例如當應力於橫向施加至連接部分時），該應力不但 以分散方式施加於玻璃13與槽25底壁間之接合部分而且施 加至槽25之側壁於是可改善該等連接部分之时久性。在此 情形下’破璃13或密封構件21之放置最好是與槽25之侧壁 ^觸^此-結構’因玻璃13或密封構件21是被槽25之侧 壁支撐，可有效改善連接部分對外力之耐久性。 在上述本發明之一些實，中’供電接頭7&至7。與接頭邊 ^極線8間之連接部分可有以螺絲旋人之結構。例如，在供 電接頭7awe每個之—末端部分形成—螺紋部分，而在接 -31 · 200307337 〜邊電極線8每個之上方部分（相 — 處)形成有螺紋之孔。狹後將i :母固供私接頭7&至7。 ”，、俊將螺紋部分***螺紋 万；一起，即可使接頭邊電極線 疋 相連接υ. ^丁應〈供電接頭〜至7c互 舉例 ;證明本發明支持器之優點，曾進行下面之實驗。When ZnO-SKVL-based glass is used as glass immortal, it can improve the air quality, reliability and reliability of the joint. In addition, the material forming the sealing member 可 may contain the same material as that used to form the tubular member. When the material is selected in this way, the sealing member u may use a material whose expansion coefficient is approximately equivalent to the thermal expansion coefficient of the tubular member. Due to the difference in thermal expansion coefficient between the seal structure and the material of the tubular member 6, thermal stress is concentrated in the joints between the seal structure and the tubular member 6. The material forming the seal member 11 can be useful on the right side; it forms a ceramic body 2 the same material as the base 3. ^ As above, the seal member 11 and ceramic technique 2 can be formed of materials whose expansion coefficients are approximately the same as each other. Therefore, q in the seal member 11 and the ceramic body 2 is as follows. The third example of the present invention supports crying a mouth a ° < h-shaped joint directly connected to • 23- 200307337 2 o'clock to prevent thermal stress in the thermal expansion coefficient difference between the sealing member and the material of the ceramic body 2 Concentration of the joints. A bone for forming the ceramic body # 其 念 2u 〆 〆 and the base 3 (the material may contain aluminum nitride. The ratification inscription has high resistance to rhyme gas used for processing semiconductor substrates. In addition, The ceramic body 2 of nitride nitride shows a lower particle generation rate than the ceramic body containing other materials. Furthermore, due to the higher thermal conductivity of aluminum nitride, the surface of ceramic body 2 (above Installed such as-the surface of the semiconductor substrate workpiece) temperature distribution is the same. Domain = :; The area surrounded by the sealing member u, the tubular member 6 and the ceramic body 2 is preferably in a vacuum or non-oxidized state. Below this It can effectively inhibit oxidation of the joint edge electrode wire 8 or the connection part between the joint edge electrode wire 8 and the power supply connector for the heating circuit 5 or the electrode 4 in the description area. An ion-nickel alloy can be used to form the joint Material of the side electrode wire 8. In this case, the thermal expansion coefficient of the ion 'nickel-lead alloy is not much different from that of the former. Therefore, the joint portion between the side electrode wire 8 and the sealing member 11 made by the ceramic material is formed And when the φw electrode wire is "sealed structure; when it is money, the thermal stress generated by joining Shaofen between the scales 11 on the side of the joint can be used. In addition, the above-mentioned ionic alloy alloy has excellent wettability to glass used as a joining member. . Therefore can improve the joint electrode line 8 and seal Reliability of joints between components η. Use the power supply to connect μ, r & package component I connector side electrode wire 8 can package 钿, 钿 and others The bell layer, =, is formed on the base material and is used as a layer containing gold and a wide variety of materials. In this case, the “ceramic materials” and the above-mentioned base material are formed. • 24 · 200307337 The difference between the thermal expansion coefficients is small Therefore, when the joint between the joint edge electrode wire 8 and the sealing member 11 is formed, the thermal stress concentration at the joint portion due to the expansion coefficient difference between the joint edge electrode wire 8 and the seal member 11 can be suppressed from the beginning, The helium leakage rate from the sealing area surrounded by the sealing member 11, the tubular member 6, and the ceramic body 2 to other areas is preferably 10-8 Pa.m3 / S or less. In this case, oxidation of the joint-side electrode wire 8 and the joint portion between the joint-side electrode wire 8 and the power-supply joints for the heating circuit 5 and the electrode 4 located in the sealed area can be suppressed. When the holder m shown in Figs. 1 to 3 is used to process a semiconductor substrate, when it is set, T processes the semiconductor substrate at a low cost. In addition, a processing device with high reliability can be realized. Second Example Fig. 4 is a sectional view of a holder according to a second example of the present invention. Now, a holder according to a second example of the present invention will be described with reference to FIG. As shown in FIG. 4, the supporter of this example has a structure substantially corresponding to that shown in FIG. 但; however, a protrusion M for defining a sealing structure correction position is formed on the inner wall of the tubular member 6. The tubular member 6 and the sealing member are joined and fixed together with the glass 13 provided therebetween while the end of the sealing member u—the end portion facing it—is protruded and pressed. According to the above structure, the same advantages as those of the holder i shown in Fig. ⑴ can be obtained, and at the same time, the area of the tubular member 6 and the sealing member _ can be increased due to the protrusion ㈣. Therefore, the reliability of the joint between the tubular member 6 and the sealing member u can be increased. Therefore, the leakage rate can be effectively reduced. • 25- 200307337 Third Example Fig. 5 is a sectional view of a holder according to a third example of the present invention. A holder according to a third example of the present invention will be described with reference to FIG. The structure of the supporter I is basically equivalent to that of Figs. I to 3, but the position where the sealing member π is placed is different. That is, the sealing member 1 is placed inside the tubular member 6 and comes into close contact with the back surface of the ceramic body 2. The sealing member 11 thus placed outside is fixed to the tubular member 6 and the terminal-side electrode wire 8 with glass 1 3. / The above structure can obtain the same advantages of the holder 1 shown in Figs. 1 to 3 and at the same time due to the sealing member! !! The ceramic body 2 can hold the sealing member 11 in contact with the back surface of the ceramic pot 2. Therefore, the thickness of the sealing member 11 can be reduced. This allows greater freedom in designing the sealing member 11. In addition, in the above-mentioned case, the glass provided as a solid joint member between the ceramic body 2 and the sealing member η can be used to connect the ceramic body 2 and the sealing member ^ together. Therefore, the same advantages as those of the holder shown in FIG. 4 can be obtained. In addition: The glass provided between the ceramic body 2 and the sealing member U can be formed by heat treatment by applying a pressure of -100 g / cm2 or more through the sealing member 11 side. In this case, since the small gap can be removed by breaking glass, the air density at the joint portion between the ceramic body 2 and the sealing member 11 can be improved and in addition, it can be changed to its joint force. ° Fourth example Fig. 6 is a sectional view of a holder according to a fourth example of the present invention. Fig. 7 is a sectional view showing a part of the holder of Fig. 6; A holder according to a fourth embodiment of the present invention will now be described with reference to Figs. -26-200307337 As shown in Figs. 6 and 7, it is used as a support structure for the base of a semiconductor manufacturing device. The structure is basically equivalent to that shown in Fig. 5, but Mi-6 is different. That is, in the figure ⑻ < structure (see the figure is placed in the tubular member 6 _., Ϊ), the sealing member 21 sounds, and Gongchuan supplies the side electrode wire 8 and the electrode 4 and The periphery of the connection part between the circuits of the heating circuit 5. The sealing member 2 丨 is bonded and fixed to the surface of the ceramic body containing a nitride by a glass 13. The electrode-side electrode wire 8 is placed in the sealing member 21 (the sealing member 21). Inside—the opening part), and glass 13 is provided between the joint side electrode wire 8 and the sealing member 21 as another joining member. A material used for the joint side electrode wire 8 is iron-nickel-cobalt alloy. Sealing The member 21 separates the connection part of the joint edge electrode wire 8 from the heating circuit 5 and the electrode 4 from the environment surrounding the periphery of the sealing member. The glass 13 used as the other joining member has a surface extending from the sealing member to a part of the surface to A part of the surface of the electrode side electrode wire 8 and the glass 13 has a concave cross-sectional shape (formed as a so-called meniscus shape). Therefore, as in the case of the holder 1 of the first example of the present invention, the sealing member 21 and the terminal side can be borrowed. 8 electrode wires The glass 13 is divided to obtain a high gas density. In addition, in the holder 1 shown in Figs. 6 and 7, the circuit of the side electrode wire 8 and the ceramic body 2 such as the power supply connector for heating the circuit 5 and the electrode 4 The connecting part is located in the area surrounded by the sealing member 21 and the ceramic body 2. When the joining part between the sealing member 21 and the ceramic body 2 is formed of glass 13 and has a predetermined air density, the sealing member 21 and the joint When the side electrode wire 8 is fixed together with glass 13, the area where the connection portion is located is isolated from the environment surrounding the periphery of the sealing member 21. Therefore, as in the case of the first example of the present invention, 27-200307337 can prevent the occurrence of such problems as corrosion. The material of the connection part is corroded by the tubular member 6 or the like or formed by the oxygen. The existence of M in the chi gas ~ Fu Shi Z 1 is placed in the tube, one point and surrounds the periphery of the sealing member 21 ° r And the upper return connection part, the 隔离 Y area is isolated (the structure for the inertial gas to tk in the tubular member 6 is simplified, and the manufacturing cost can be reduced. In addition, when supporting t1: work piece Carved or During processing, it is not necessary to continuously supply inertia = \ Official member 6 ', so using this support 1 can reduce operating costs. A Materials with little difference in thermal expansion coefficients can be used as ceramic materials 2, sealing members 2 and joint edge electrode wires 8 and the material of the power supply side electrode wire 9. In this case, thermal stress concentration at the joint portion between the sealing member 2m and the ceramic body 2 due to a change in ambient temperature is prevented. All are provided for each connection part of the electrode side electrode wire 8 plate such as the heating circuit 5 and the electrode 4, and the size of the sealing member 21 can be reduced. Therefore, the cost of the sealing member 21 is also reduced. In addition, because The area where the ceramic body 2 and the sealing member 21 contact each other can be reduced, and the influence of the sealing member 21 on the temperature distribution in the ceramic body 2 can be reduced. Therefore, since the temperature distribution in the ceramic body 2 can be more uniform, the temperature distribution of a workpiece such as a semiconductor substrate placed on the ceramic body 2 can also be uniform. In the holder 1 shown in FIGS. 6 and 7, 'glass 13 is filled in the connection portion between the joint side electrode wire 8 and the heating circuit 5 and the electrode 4 as the joint side electrode wire 8 and the sealing member 2 1 One additional attachment member. In this case, as long as the sealing member 21 and the joint edge electrode wire 8 are securely joined at the bottom of the sealing member 21-200307337 and sealed, a gap may be formed in the sealing member 21 in the center or upper part of the sealing member 21 Between the inner wall and the joint electrode line 8. The gap should preferably be a vacuum or non-oxidizing environment. In this case, oxidation of the terminal-side electrode wire 8 and the connection portion between the terminal-side electrode wire 8 and a circuit such as the heating circuit 5 can be effectively prevented. The helium leakage rate of the k-joint side electrode wire 8 and the heating circuit 5 in the support π 1 to the area surrounded by the sealing member 21 is preferably 1 (r8Pa.m3 / s or less. In this case, oxidation of the connecting portion between the stubby covered wire 8 in the sealing member 21 and the connection portion between the electrode side electrode wire 8 and the power supply connector for the heating circuit 5 or the like can be reliably suppressed. In the support 叩 1, A slope glass serving as a joining member may be provided at a joint portion between the ceramic body 2 and the sealing member 21. In this case, the gap between the sealing member_ceramic 2 may be filled by the broken glass. Therefore, the gas density of the joining portion As shown in FIGS. 6 and 7, the glass 13 used as a joining member has a surface extending from one of the ceramic surfaces to a portion of the surface of the sealing member 21, and the table 4 of the glass η is a concave meniscus. In this case, it is necessary to understand that glass I] has good wettability to the surface of the sealing member 2! And the ceramic body 2 so that the joint between the sealing member 21 and the ceramic body has a high air density. Therefore, the joint must be prevented A leak is generated. First practice with the present invention The situation is the same, ~ 〇_ ^ 〇2_; 62〇3_ based glass can be used as broken glass 13 ^ In addition, the material forming the sealing member 21 may contain a considerable amount; the material forming the speech member 6. Furthermore, forming the sealing member The material of 21 may contain the material for forming the ceramic body 2. -29-200307337 Fig. 8 is a diagram of a towel holder according to the fourth example of Figs. A cross-sectional view of a part of the device. ^ Referring to FIGS. 8 and 9, the fourth modification of the holder of the fourth example of the present invention will be described. * As shown in FIGS. 8 and 9, it is used as a holder for the base of a semiconductor manufacturing device ... The center of gravity of the glass 13 for joining the sealing member 21 to the ceramic body 2 is basically equivalent to the structure of the holder shown in Figs. 6 and 7. That is, the holder shown in Figs. 8 and 9 In 1, the glass 13 is provided between the sealing member 21 and the ceramic body 2. It is expected that the broken glass 13 is placed to surround and seal the joint electrode spring for the connection area between eH7a to 7e. Furthermore, in the seal There is a space between the electrode electrode 8 of the connector 21 and the edge of the connector U. The space between the sealing member 21 and the connector is not provided. Between the side electrode wires 8, the glass 13 is only provided on the side of the ceramic body 2. This structure can provide the same advantages as the holders shown in Figs. 6 and 7. The heat treatment for fixing the glass 13 in the holder i In this case, it is preferable to apply a pressure to the glass 13 through the sealing member 21. In this case, it is preferable to apply a pressure of -1GG g / em2 or more to the glass 13 from the side of the sealing member 21. Then, the glass 13 and the ceramic body 2, The number of small gaps in the interface between the sealing member 21 or the joint edge electrode line 8 can be reduced or removed. Therefore, from the electrical connector 7 to & the connection part between the joint edge electrode and the wire 8 is located in each region of helium The leakage rate can be reduced, that is, the gas density can be changed. [In addition, when a pressure of -⑽g / cm2 or more is applied, an advantage roughly equivalent to that in the fourth example can be obtained; but when the pressure is less than 100 g / cm2, it cannot be improved. Significant effect of reducing helium leakage rate. Fig. 10 is a sectional view of a modified example of the holder shown in Figs. 6 and 7 according to the fourth example of the present invention. Fig. N is a sectional view of a part of the workpiece holder shown in Fig. 10. A second modified example of the fourth example supporter of the present invention will now be described with reference to Figs. As shown in FIGS. 10 and Ii, the structure of the holder ^, which is the base of the semiconductor manufacturing device, is basically equivalent to the holder 1 shown in FIGS. 8 and 9 except that the surface shape of the ceramic body 2 is different. That is, in the holder shown in Fig. 10, two grooves 25 are formed on the back side of the ceramic body 2 (see Fig. 11). The shape of the groove 25 in the plan view may be a circle or a polygon. In addition, at the bottom wall of the groove 25, the power supply connector and even are exposed. The power supply connector 73 is exposed to the bottom wall of the groove 25 and connected to the corresponding electrode side electrode wire 8. The sealing member 21 and the glass 13 are provided around the connection portion between the power supply terminals h to 7c and the terminal-side electrode wire 8, as in the case of the holder 1 shown in Figs. "This structure provides the structure equivalent to that of the holder 1 shown in Figs. 8 and 9". In addition, because the connection portions between the power supply connectors 7a to 7c and the connector side electrode wire 8 are placed in the groove 25, if A stress is applied to the joint edge electrode line 8 in the lateral direction (that is, when the stress is applied to the connection portion in the lateral direction, for example), the stress is applied not only to the joint portion between the glass 13 and the bottom wall of the groove 25 but also to the groove in a distributed manner. The side wall of 25 can then improve the durability of these connecting parts. In this case, the placement of the broken glass 13 or the sealing member 21 is preferably in contact with the side wall of the groove 25 ^ this-structure 'because of the glass 13 or seal The component 21 is supported by the side wall of the groove 25, which can effectively improve the durability of the external force of the connecting portion. In some aspects of the present invention described above, the 'power supply connector 7 & to 7. The connection portion between the connector side and the pole line 8 There may be a structure for screwing people. For example, each-end portion of the power supply connector 7awe is formed with a threaded portion, and the upper portion (phase-place) of each -31 · 200307337 ~ side electrode wire 8 is formed Threaded hole. After narrowing, i: female solid for private connection 7 & to 7. ", Jun inserts the threaded part into the thread 10,000; together, the connector side electrode wire 疋 can be connected together. ^ 丁 应 〈Power supply connector ~ to 7c exemplify each other; Prove the advantages of the support of the present invention, The following experiments have been performed.

先’準備具有表”斤列成分之四種粉狀起始材料 表T 序號 — 質量比 ^ ' - ---------- AIN: Y2〇3 = l 〇〇；5 成分2 Α1Ν:Υ2〇3 = ι〇〇:0 5 Al2〇3:Ca〇：Me〇=1〇〇 〇 2 〇 2 成分4 AlN:CaO=1 no ? η ~~ ^ . ^ΓΓ7~---———_ 衣i成分之每種起始材料加上結合劑及溶劑，然 後以球形研磨器攪拌而形成有該等成分（成分⑴)之軟膏。 下一步，將含有表】中】至4項成分之個別軟膏以醫用刀 使<形成薄片。將如此形成之薄片（綠色薄片）於進行燒結後 切割成直35G mm之圓形。然後以屏幕印刷法對如此形成 义圓形薄片施加含鎢之漿而形成一加熱電路。 下一步，將未被提供有加熱電路之複數張薄片疊在其上 形成有上逑加熱電路之表面上。此外，在此疊片表面上再 且上張具有以屏幕印刷法施加含鶬之漿所形成電漿形成 (射頻）電極或靜電電極（靜電抗流）之薄片。於是即形成以該 等薄片製成之疊片。 -32- 200307337 將如此形成之堆疊薄片以在氮環境中700 °C加熱溫度之 加熱處理而除油。 下一步，使用含有成分1，2及4軟膏之疊片以在氮環境中 1，800°C加熱溫度加以燒結。含有成分3軟膏所製成之疊片以 在氮環境中1，600°C加熱溫度加以燒結。接著在預定位置形 成供應電流至加熱電路及靜電電極或電漿形成電極之供電 接頭。 下一步，具有表I所示1至4成分之每種軟膏以喷乾法形 | 成粒。用該等粒做為起始材料，以乾壓法形成圓筒鑄體。 將此等鑄體以在氮環境中700°C加熱溫度予以除油。接下來 在與上述分別具有成分1至4陶瓷體燒結之同樣狀況下進行 燒結處理。 在上述燒結處理後，對所形成之圓筒經燒結體進行機器 處理。於是即可獲得内徑50 mm，外徑60 mm，長200 mm之 管狀構件。 除該等管狀構件外，以與上述同樣步騾形成結構不同於 φ 上述管狀構件之管狀構件。在此等管狀構件之内壁上距將 要與陶瓷體接合之接合部分（該管狀構件末端）30 mm距離 處提供一保持密封構件之突出部。該用做支持零件之突出 . 部高度為5 mm(從管狀構件内壁算起之高度），内徑為40 mm ° 將A12〇3-Y2〇3-A1N所製之軟膏施加至該管狀構件之一末 端表面。該管狀構件及陶瓷體與塗有軟膏之表面連接於一 起，該表面則與陶瓷體之背面相接觸，對如此形成之接合 -33 - 200307337 體在處理燒結陶瓷體同樣狀況下施以熱處理。於是每一陶 瓷體與每一管狀構件均接合於一起。在每一接合體中，用 以從外部向埋入於陶瓷體内之加熱電路、靜電電極及電漿 形成電極洪電之各俣電接頭末端則曝露於位於管狀構件内 之表面區域。 接下來，將用做電源供應導電構件之接頭邊電極線連接 至用於加熱電路、靜電電極及電漿形成電極。透過這些電 極線，電流可供至加熱電路、靜電電極及電漿形成電極。 此外，分別具有成分1至4之薄片被切割成預定大小，然 後被施以熱處理而成為與形成陶瓷體同樣情形之一些燒結 體。必要時，該等燒結體之形成可藉堆疊複數個薄片而有 預定之厚度。接下來對如此形成之燒結體施以機器處理而 在其中形成讓接頭邊電極線穿過之開口部分。此外，對該 等疊片體施以機器處理俾調整其周邊尺寸而使之可***管 狀構件内。於是即形成密封構件。此外，以類似方式形成 用於接頭邊電極線與本發明第四實例所述電路間每一連接 部分之另一類型密封構件。 接下來在每一陶瓷體均被提供有管狀構件、供電接頭及 用為電源供應構件之電極線後，每個密封構件均被***管 狀構件内。另一選擇是可將密封構件固定至管狀構件内而 形成一接合體，然後可將該接合體接合至陶瓷體。此外， 將上述另一類型密封構件提供於陶瓷體上而圍住接頭邊電 極線之每一連接部分。 接下來分別在管狀構件與密封構件間及電極線與密封構 -34- 200307337 件間施加玻璃。該等密封構件在氮環境中，在氬環境中， 在真空環境中或在空氣中以700 °C溫度之點火處理分別加 以固定而使密封構件、管狀構件及陶瓷體所包圍之區域被 密封。此外，在具有上述另一類型密封構件之樣本上分別 將玻璃施加至密封構件與陶瓷體間及電極線與密封構件 間，然後以與上述類似之方式進行熱處理（點火處理）。在某 些樣本中是透過密封構件對玻璃施加100 g/cm2或更大壓力 之同時進行熱處理。於是該等密封構件被分別固定，且密 封構件及陶瓷體所包圍之每一區域被密封。在這些舉例中 所用之玻璃為ZnO-Si〇2-B2〇3晶化玻璃。 按照上述方法，曾準備表II至VI中所示之68個樣本。此 外，為證明在對玻璃點火處理中所施加壓力之影響，曾準 備表VII至IX所示之39個樣本（樣本69至107號）。表II至IX顯 示製造下述測試中所用樣本之狀況及其評估結果。First 'prepare the four powdered starting materials with the ingredients listed in the table'. Table T No.-Mass Ratio ^ '----------- AIN: Y2〇3 = l 〇〇; 5 Ingredient 2 Α1Ν : Υ2〇3 = ι〇〇: 0 5 Al2〇3: Ca〇: Me〇 = 1〇00〇2 〇2 Component 4 AlN: CaO = 1 no? Η ~~ ^. ^ ΓΓ7 ~ --------- —_ Each starting material of the ingredients i is added with a binding agent and a solvent, and then stirred with a ball mill to form an ointment with these ingredients (ingredient ⑴). In the next step, it will contain 4 to 4 ingredients in the table] The individual ointment was formed into a thin sheet with a medical knife. The thus-formed sheet (green sheet) was cut into a straight 35G mm circle after sintering. Then, a tungsten-containing sheet was applied with a screen printing method to the formed circular sheet. The slurry is formed into a heating circuit. Next, a plurality of sheets not provided with a heating circuit are stacked on the surface on which the upper heating circuit is formed. In addition, on the surface of the stack, the upper sheet has The screen printing method applies a plasma-forming (radio frequency) electrode or an electrostatic electrode (static anti-flow) sheet formed by a slurry containing rhenium. A stack made of these sheets. -32- 200307337 The stack sheet thus formed was degreased by heating at a heating temperature of 700 ° C in a nitrogen atmosphere. Next, a stack containing ointments 1, 2 and 4 was used. The sheet was sintered at a heating temperature of 1,800 ° C in a nitrogen environment. A laminated sheet made of an ointment containing ingredient 3 was sintered at a heating temperature of 1,600 ° C in a nitrogen environment. Then, a supply current was formed at a predetermined position to be heated. The circuit and the electrostatic electrode or the plasma form the power supply connector of the electrode. Next, each ointment having the ingredients 1 to 4 shown in Table I is spray-dried | granulated. Use these granules as the starting material and dry A cylindrical cast body is formed by pressing. These cast bodies are degreased at a heating temperature of 700 ° C. in a nitrogen atmosphere. Next, the sintering treatment is performed under the same conditions as described above for sintering the ceramic bodies having components 1 to 4 respectively. After the above-mentioned sintering treatment, the formed cylinder is machine-processed through the sintered body. Thus, a tubular member having an inner diameter of 50 mm, an outer diameter of 60 mm, and a length of 200 mm can be obtained. Step structure is different A tubular member of the above-mentioned tubular member at φ. A protrusion for holding the sealing member is provided on the inner wall of the tubular member at a distance of 30 mm from the joint portion to be joined with the ceramic body (the end of the tubular member). This is used as a supporting part The protruding part has a height of 5 mm (the height from the inner wall of the tubular member) and an inner diameter of 40 mm. An ointment made of A12〇3-Y2〇3-A1N is applied to one end surface of the tubular member. The The tubular member and the ceramic body are connected to the surface coated with the ointment, and the surface is in contact with the back surface of the ceramic body. The thus-formed joint-33-200307337 body is heat-treated under the same conditions as the sintered ceramic body. Each ceramic body is then joined to each tubular member. In each of the joints, the ends of each of the electrical contacts used to form an electrode flood from a heating circuit, an electrostatic electrode, and a plasma embedded in a ceramic body from the outside are exposed to a surface area inside the tubular member. Next, connect the side electrode wires used as the conductive members of the power supply to the electrodes for heating circuits, electrostatic electrodes, and plasma forming electrodes. Through these electrode wires, current can be supplied to the heating circuit, the electrostatic electrode, and the plasma forming electrode. In addition, the sheets each having the components 1 to 4 were cut into a predetermined size, and then subjected to a heat treatment to become sintered bodies in the same manner as in the case of forming a ceramic body. When necessary, the sintered bodies may be formed by stacking a plurality of sheets to a predetermined thickness. Next, the thus-formed sintered body is subjected to a machine treatment to form therein an opening portion through which a terminal-side electrode wire passes. In addition, these laminated bodies are subjected to machine treatment and their peripheral dimensions are adjusted so that they can be inserted into the tubular member. Thus, a sealing member is formed. In addition, another type of sealing member is formed in a similar manner for each connection portion between the terminal edge electrode line and the circuit described in the fourth example of the present invention. Next, after each ceramic body was provided with a tubular member, a power supply connector, and an electrode wire used as a power supply member, each sealing member was inserted into the tubular member. Alternatively, the sealing member may be fixed in the tubular member to form a joint body, and then the joint body may be joined to a ceramic body. In addition, the above-mentioned another type of sealing member is provided on the ceramic body to surround each connection portion of the electrode-side electrode line. Next, glass is applied between the tubular member and the sealing member, and between the electrode wire and the sealing member. The sealing members are fixed in a nitrogen atmosphere, an argon atmosphere, a vacuum environment or in the air at a temperature of 700 ° C, respectively, to fix the sealing member, the tubular member and the area surrounded by the ceramic body. In addition, glass was applied between the sealing member and the ceramic body and between the electrode wire and the sealing member on a sample having another type of sealing member described above, and then heat-treated (ignition treatment) in a manner similar to that described above. In some samples, heat treatment is performed while applying a pressure of 100 g / cm2 or more to the glass through the sealing member. The sealing members are then fixed separately, and each area surrounded by the sealing member and the ceramic body is sealed. The glass used in these examples is ZnO-SiO2-B203 glass. According to the above method, 68 samples shown in Tables II to VI were prepared. In addition, to demonstrate the effect of pressure on the glass ignition process, 39 samples (samples 69 to 107) shown in Tables VII to IX were prepared. Tables II to IX show the conditions of the samples used in the following tests and their evaluation results.

•35- 200307337• 35- 200307337

A Lk) Ό 00 On Ui 4^ U) to H—k 樣本 序號 舉例 舉例 舉例 舉例 比較例 舉例 1舉別1 舉例 舉例 比較例 比較例 比較例 舉例 舉例 舉例 類型 成分1 成分1 成分1 成分1 成分3 成分3 1成分2 成分1 I 成分1 成分1 成分1 成分1 成分1 成分1 I成分1 成分1 成分1 成分1 成分2 成分3 成分3 成分2 1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 管狀構件 材料 成分1 成分1 1—i 成分4 今 Η—k 成分3 成分1 成分4 成分2 成分1 成分3 成分1 成分1 成分1 成分1 密封構件 材料 接觸 接觸 接觸 S S 5S S 14 S S 3 密封 真空 2 2 2 空氣 真空 興r 密封環境 科伐 科伐 科伐 科伐 科伐 科伐 1科伐1 科伐 科伐 科伐 科伐 科伐 科伐 科伐 電極線 材料 冷j 彎月之 形成 Vfjtl 二 H—k ic Vyrti ps^ Vr h—1 io Vdi Η* Η—Α Pk Vfjfl ✓ 無法密封 (玻璃破裂） Η—A Veil /^φ 1〇_8或更少 η-* a Vr H—* Vt 無法密封 (玻璃破裂） 無法密封 (供電接頭之氧化） 無法密封 (供電接頭之氧化） H—* Vfiu H—^ io Vyrti Vt 〇όο Vdi 漏洩率 (Pa.m3/s) 抗氧化力 (在空氣中750°C) ,II -36- 200307337A Lk) Ό 00 On Ui 4 ^ U) to H—k Sample No. Example Example Example Example Comparative Example 1 Farewell 1 Example Example Comparative Example Comparative Example Example Example Type 1 Component 1 Component 1 Component 1 Component 3 Ingredient 3 Ingredient 2 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 2 Ingredient 3 Ingredient 3 Ingredient 2 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Tubular member material Ingredient 1 Ingredient 1 1-i Ingredient 4 Imam-k Ingredient 3 Ingredient 1 Ingredient 4 Ingredient 2 Ingredient 1 Ingredient 3 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Sealing member material contact contact contact SS 5S S 14 SS 3 Sealed vacuum 2 2 2 Air vacuum Xingr Sealed environment Covar Covar Covar Covar Covar 1 Kovar 1 Covar Kovar Covar Kovar Covar electrode wire material cold j Meniscus Formation of Vfjtl Two H—k ic Vyrti ps ^ Vr h—1 io Vdi Η * Η—Α Pk Vfjfl ✓ Unsealable (glass breaks) Η—A Veil / ^ φ 1〇_8 or less η- * a Vr H— * Vt cannot be sealed (glass breaks) cannot be sealed (oxidation of the power supply connector) cannot be sealed (oxidation of the power supply connector) H— * Vfiu H— ^ io Vyrti Vt 〇όο Vdi leakage rate (Pa.m3 / s) Antioxidant power (in 750 ° C in air), II -36- 200307337

K) UJ K) Μ CO h—^ 5； 樣本 序號 舉例 比較例 舉例 舉例 1舉例1 宣 比較例 比較例 ί 比較例 潋 成分1 成分3 成分3 成分2 1成分1 成分1 成分1 i 成分1 成分1 s 鷂 成分2 成分3 成分3 成分2 I成分1 1 成分1 成分1 成分1 成分1 管狀構件 材料 成分4 成分1 成分3 成分1 成分4 成分2 成分1 成分3 . 1 成分1 密封構件 材料 接觸 接觸 ! 接觸 接觸 檎觸 接觸 接觸 接觸 接觸 输 Ζ 密封環境 科伐 科伐 科伐 ζ 1科伐1 科伐 Z 科伐 科伐 極線材料 冷j 办1 彎月形之i 形成 H—k 無法密封 (玻璃破裂） I—k 。6〇 Vffti 〇0〇 Vfili }% 乂V °ώ Vsli 無法密封 (玻璃破裂） 無法密封 (供電接頭之氧化） 無法密封 (供電接頭之氧化） 漏洩率 (Pa*m3/s) 抗氧化力 (在空氣中750°C) j—I -37- 200307337 LO G\ UJ Ln -U UJ U) uj K) LO U) 〇 to to U\ 薛 rr 谁 罐 锥 rr 锥 rr 谁 锥 锥 潋 簿 宣 宣 S S 窆 宣 耸 遜 今 今 今 今 今 今 今 韋 UJ U) K) H—k H—^ )—k l·-^ 鷂 娜 今 今 今 今 今 今 韋 斧 to U) U) K) ►—k 1—^ 1—k 1—i h—k h~k H-^ Η—A 雜 丰 耸 蚜 今 今 今 今 今 今 今 今 今 韋 Η—* U) H—* Κ) Η-Λ U) H-* H—k 雜 丰 窗 © 窗 畲 畲 窗 m 窗 窗 窗 畲 鯓 Μ vyi «^0 j^g 嵴 >K 鯓 ρ 单 , % g 耸 躑 % 单 脔 鎵 * 送 Η—k ic H—* H-1 io Η—* '¥ 输 H-* 無法密封 1—k % H—4 漏洩率(Pa· isv pk Pk r^T \jftii Vfifi Wu r打 VaU Vrflj Vdi Vrsli ★ 、r 、十 3 u> C/3 命 命 奇 〇 〇° <K) UJ K) Μ CO h— ^ 5; Sample No. Example Comparative Example Example 1 Example 1 Comparative Example Comparative Example 潋 Component 1 Component 3 Component 3 Component 2 1 Component 1 Component 1 Component 1 i Component 1 Component 1 s 鹞 component 2 component 3 component 3 component 2 I component 1 1 component 1 component 1 component 1 component 1 tubular member material component 4 component 1 component 3 component 1 component 4 component 2 component 1 component 3. 1 component 1 seal member contact Contact! Contact Contact 檎 Contact Contact Contact Contact Contact Sealing environment Covar Covar Kovar ζ 1 Kovar 1 Kovar Z Covar Kovar polar material cold j Office 1 Meniscus i formation H-k cannot be sealed (Glass breaks) I—k. 6〇Vffti 〇0〇Vfili}% 乂 V ° FREE Vsli cannot be sealed (glass breaks) cannot be sealed (oxidation of power supply connector) cannot be sealed (oxidation of power supply connector) leakage rate (Pa * m3 / s) oxidation resistance (in 750 ° C in air) j—I -37- 200307337 LO G \ UJ Ln -U UJ U) uj K) LO U) 〇to to U \ Xuerr Who can cone rr cone rr who cone cone Xuan Xuan Xun Xuan today, today, today, today, and today UJ U) K) H—k H— ^) —kl ·-^ Yana today, today, today, today and today Axe to U) U) K) ►—k 1 — ^ 1—k 1—ih—kh ~ k H- ^ Η—A hybrid aphids today, today, today, today, today, today and today Η— * U) H— * Κ) Η-Λ U) H- * H—k Miscellaneous Window © Casement Window m Casement Window 畲 鯓 Μ vyi «^ 0 j ^ g 嵴 > K 鯓 ρ single,% g towering% single gallium * send Η—k ic H— * H-1 io Η— * '¥ lose H- * cannot be sealed 1-k% H-4 leak rate (Pa · isv pk Pk r ^ T \ jftii Vfifi Wu r hit VaU Vrflj Vdi Vrsli ★, r, ten 3 u > C / 3 命 命 奇 〇〇〇 ° <

-38- 200307337 to 〇 ON to δ U) U) 00 LO <1 樣本 序號 舉例 舉例 舉例 比較例 舉例 舉例 舉例 比較例 舉例i 舉例！ 舉例 比較例 舉例 舉例1 舉例 比較例 類型 成分1 成分1 成分1 成分1 成分1 1—^ 成分1 成分1 5 成分1 成分1 成分1 成分1 1—k 成分1 H-^ :¾:遜 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 ί _1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 管狀構件 材料 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 密封構件 材料 S S S S S S S 密封 2 2 2 2 2 2 2 密封環境 Cu-Mo-3 Cu-Mo-2 Cu-Mo-1 Cu-Mo (無鍍層） Mo-3 Mo-2 Mo-1 ^ 1 b|Q Cu-W-3 Cu-W-2 Cu-W-1 Cu-W (無鍍層） U) to 1 )—^ W (無鍍層） 電極線 材料 * 彎月形之 形成 HT8或更少 〇όο Vdi H—k Vrtli 1〇·8或更少 〇ώ Vnli a Wli Vftll Η—^ 〇« 1〇-8或更少 1—^ a Vt 1〇·8或更少 Still 1〇_8或更少 KT8或更少 h—^ Wii H—* Vcu /^Γ 漏洩率(PaTn3/s) 被氧化 被氧化 被氧化 被氧化 抗氧化力 (在空氣中750°C) >v-38- 200307337 to 〇 ON to δ U) U) 00 LO < 1 Sample No. Example Example Example Comparative Example Example Example Comparative Example Example i Example! Example Comparative Example Example 1 Example Comparative Example Type Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 1- ^ Ingredient 1 Ingredient 1 5 Ingredient 1 Ingredient 1 Ingredient 1 Ingredient 1 1-k Ingredient 1 H- ^: ¾: Inferior Ingredient 1 Ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 _1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 tubular member material ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 ingredient 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 sealing member material SSSSSSS seal 2 2 2 2 2 2 2 sealing environment Cu-Mo-3 Cu-Mo-2 Cu-Mo-1 Cu-Mo ( Unplated) Mo-3 Mo-2 Mo-1 ^ 1 b | Q Cu-W-3 Cu-W-2 Cu-W-1 Cu-W (unplated) U) to 1) — ^ W (unplated ） Material of electrode wire * Meniscus formation HT8 or less 〇όο Vdi H—k Vrtli 10.8 or less 〇 FREE Vnli a Wli Vftll Η— ^ 〇 «1〇-8 or less 1— ^ a Vt 1〇 · 8 or less Still 1〇_8 or less KT8 or less h— ^ Wii H— * Vcu / ^ Γ Leakage rate (PaTn3 / s) is oxidized and oxidized Oxidized Antioxidant (750 ° C in air) > v

-39· 200307337 ON 00 ON ON U\ 2 G\ U) S ON § Ln Ό 00 U\ <1 Ln as U) 樣本 序號 i舉例 舉例 舉例 比較例 舉例 舉例 舉例 比較例 舉例 舉例 舉例 比較例 舉例 1舉例1 舉例 比較例 類型 成分1 H—k 成分1 成分1 成分1 成分1 成分1 成分1 1成分1 成分1 成分1 成分1 成分1 成分1 成分1 :¾:逐 鷂 1成分1 1 成分1 成分1 成分1 成分1 成分1 I成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 管狀構件 材料 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 I成分1 成分1 成分1 成分1 1成分1 成分1 成分1 密封構件 材料 S a 53 接觸 接觸 接觸 接觸 密封 2 2 2 2 2 2 2 真空 密封環境 Cu-Mo-3 Cu-Mo-2 Cu-Mo-l Cu-Mo (無鍍層） Mo-3 Mo-2 ? H—k sS^V Cu-W-3 i Cu-W-2 Cu-W-1 Cu-W (無鍍層） U) to 1 H—* W (無鍍層） 電極線 材料 }¥ 彎月形之 形成 HT8或更少 H—^ q 00 Vdi 1〇·8或更少 Η—A 〇όο VrUi Η—* 〇όο Wh Vrffi H—* Veu 1〇·8或更少 1〇·8或更少 i Viju Vt Η—4 〇όο Vdi HT8或更少 1〇_8或更少 1〇-8或更少 i 1—^ 〇0〇 Vdi 1〇·8或更小 1¾ P 3 U) m 被氧化 被氧化 被氧化 被氧化 抗氧化力 (在空氣中750°C) >V1-39 · 200307337 ON 00 ON ON U \ 2 G \ U) S ON § Ln Ό 00 U \ < 1 Ln as U) Sample No. i Example Example Example Comparative Example Example Example Comparative Example Example Example Comparative Example Example 1 Example 1 Example Comparative Example Type Component 1 H-k Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1 Component 1: ¾: 1 by 1 Component 1 1 Component 1 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 tube member material component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 I Component 1 Component 1 Component 1 Component 1 1 Component 1 Component 1 Component 1 Sealing Material S a 53 Contact Contact Contact Contact Seal 2 2 2 2 2 2 2 Vacuum Sealed Environment Cu-Mo-3 Cu-Mo-2 Cu-Mo- l Cu-Mo (unplated) Mo-3 Mo-2? H—k sS ^ V Cu-W-3 i Cu-W-2 Cu-W-1 Cu-W (unplated) U) to 1 H— * W (unplated) electrode wire material} ¥ meniscus formation HT8 or less H— ^ q 00 Vdi 1〇 · 8 or less Η—A 〇όο VrUi Η— * 〇όο Wh Vrffi H— * Veu 1〇 · 8 or less 1〇 · 8 or less i Viju Vt Η—4 〇όο Vdi HT8 or less 1〇_8 or more Less 1〇-8 or less i 1- ^ 〇00〇Vdi 1〇 · 8 or less 1¾ P 3 U) m is oxidized to be oxidized to be oxidized to be oxidized anti-oxidant (750 ° C in air) > V1

-40--40-

HH -41 - Ο 00 νο Lk) Ό Η— 〇 00 v〇 00 oo 00 <1 00 ON 00 Ltt 樣本 序號 1舉例1 舉例 舉例 舉例 舉例 舉例| 舉例 舉例 舉例 比較例 舉例 舉例 |舉例 舉例 舉例 舉例i 類型 成分1 成分1 成分1 成分1 成分1 1 |成分1 成分1 成分1 成分1 成分1 成分1 成分1 <ΪΤ Η—^ 成分1 H—^ 成分1 耸透 成分1 I 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 成分1 管狀構件I 材料 成分1 | 成分1 成分1 成分1 成分' I成分1 成分1 成分1 成分1 成分1 成分1 成分1 1成分1 成分1 成分1 成分1 密封構件 材料 S ^00 、廣 Η ^00 與玻璃接觸(圖8) 與玻璃接觸(圖8) 與玻璃接觸(圖8) 蘇 食 S ^00 S ^00 、粉 食 Η ^00 與玻璃接觸(圖8) 與玻璃接觸(圖8) Μ- 食 Μ ^00 Μ ^00 與玻璃接觸(圖8) 與玻璃接觸(圖8) 滋· 矣 画j ^00 與玻璃接觸(圖8) 2 2 Ζ 密封環境 科伐 科伐 科伐 Cu-Mo-3 Cu-Mo-3 Cu-Mo-2 Cu-Mo-2 Cu-Mo-1 Cu-Mo-1 Cu-Mo Cu-w-3 Cu-w-3 Cu-w-2 Cu-w-2 Cii-w-1 Cu-w-1 電極線 材料 100 g/cm2 100 g/cm2 100 g/cm2 100 g/cm2 100 g/cm2 100 g/cm2 100 g/cm2 •叙 100 g/cm2 密封負荷 )—* VfiEli Vt °ώ Vrfli \ieAi )—* ic Vnii Η—* Veil ρϋ^ Vfili H-A Vaii 乂V pk Vfrti )—k "I Vdli )—a Vfiti )—k io Wli H—k Vaii H—* S<tiu 1—* Vcii η—^ 〇όο Vtfjl 漏洩率 (Pa.m3/s) Μ 抗氧化力 (在空氣中750°C)HH -41-〇 00 νο Lk) Ό Η — 〇00 v0000 oo 00 < 1 00 ON 00 Ltt Sample No. 1 Example 1 Example Examples Example Examples | Examples Examples Examples Examples | Examples Examples Examples Type component 1 component 1 component 1 component 1 component 1 1 | component 1 component 1 component 1 component 1 component 1 component 1 component 1 < ΪΤ Η— ^ component 1 H— ^ component 1 towering component 1 I component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 component 1 tubular member I material component 1 | component 1 component 1 component 1 component 'component 1 component 1 component 1 component 1 component 1 component 1 component 1 1 component 1 component 1 component 1 component 1 Sealing member material S ^ 00, Hiroshima ^ 00 Contact with glass (Fig. 8) Contact with glass (Fig. 8) Contact with glass (Fig. 8) Su Shi S ^ 00 S ^ 00, powder food Η00 contact with glass (Figure 8) contact with glass (Figure 8) Μ- 食 Μ ^ 00 Μ ^ 00 contact with glass (Figure 8) contact with glass (Figure 8) j ^ 00 Contact with glass (Figure 8) Cu-Mo-3 Cu-Mo-3 Cu-Mo-2 Cu-Mo-2 Cu-Mo-1 Cu-Mo-1 Cu-Mo Cu-w-3 Cu-w-3 Cu-w-2 Cu- w-2 Cii-w-1 Cu-w-1 electrode wire material 100 g / cm2 100 g / cm2 100 g / cm2 100 g / cm2 100 g / cm2 100 g / cm2 100 g / cm2 • 100 g / cm2 Sealing load) — * VfiEli Vt ° FREE Vrfli \ ieAi) — * ic Vnii Η— * Veil ρϋ ^ Vfili HA Vaii 乂 V pk Vfrti) —k " I Vdli) —a Vfiti) —k io Wli H—k Vaii H— * S < tiu 1— * Vcii η— ^ 〇ο Vtfjl Leakage rate (Pa.m3 / s) Μ Antioxidant power (750 ° C in air)

>VIII •42- 200307337> VIII • 42- 200307337

ο η—* 1—α S Ο 1—* S H—^ s Η—^ >—* 樣本 序號I 舉例 比較例 1舉例1 舉例 舉例 舉例i 舉例 類型| _ί 成分1 成分3 |成分3 成分2 成分1 成分1 成分1 :¾:菡 成分2 成分3 成分3 成分2 成分1 成分1 成分1 管狀構件 材料 成分4 1 成分1 |成分3 I 成分1 成分4 成分2 成分1 密封構件 材料 蘇 矣 Β ^00 與玻璃接觸(圖8) Μ Β ^00 躺 Μ ^00 藏 S ^00 Μ· Η ^00 蘇 s QO 密封 2 密封環境 科伐 科伐 1科伐1 科伐 科伐 科伐 科伐 電極線 材料 密封負荷 Wu 無法密封 (玻璃破裂） °όο η- Η—Α Stiai Vfili ►—k ic \jfiu Vr 1〇_8或更少 漏洩率 (Pa.m3/s) 抗氧化力 (在空氣中750°C) >IX -43 - 200307337 在各表中f電極線材料」欄内之Cu-w係指銅（Cu)鎢（W) 合金。在表v中「電極線材料」欄内用於第38號樣本之”W-1" 係指該電極線是以具有2 μιη厚鎳（N：i)鍍層（以下稱為第一鍍 層）之病（w )基材料所製。在「電極線材料」欄内用於第 號樣本之’’W-2”係指以具有！ μιη厚金（Au)鍍層（以下稱為第 二鍍層）之鎢（W)基材料用做電極線塗層。在「電極線材料」 欄内用於第40號樣本之”w_3”係指以具有2 μιη厚鎳（Νι)層 及1 μπι厚金（Au)層（以下稱為第三鍍層）之鎢（w)基材料以 該次序鍍於其上而用做電極線。 在「電極線材料」欄内用於第42至44號樣本之” Cu-W]，，， ’’Cu-W-2”及"Cu-W-3”係指每個電極均係分別以具有第一， 第二及第三鍍層之銅鎢（Cu_w)合金基材料所製。在「電極 線材料」欄内用於第46至48號樣本之"Moq，，至，，Μ〇·3，，係指 每個電極、線均係分別以具有第-至第三鍍層纟鉬(Mo)基材 料形成。在表VII至IX中丨，密封，，欄内之，，與玻璃接觸（圖8),，一 闺係扣使用用於圖8所示支持器之密封類型。 為確定支持器之抗熱及氧化力，每一樣本均在空氣中以 750 C施以熱處理l5〇〇〇小時。在熱處理後測量加熱電路等之 電路電阻而對每-樣本在電極線與加熱電路或類似電路間 連接部分（供電接頭或類似物）之氧化情形加以評估。因此可 萑疋‘照本發明各實例所形成之支持器樣本有圖2至9所示 之充分抗氧化力。 二來為萑足每一樣本密封邵分（為陶瓷體、管狀構件 及在封構件所包圍之區域)之氣密度，如圖。及…斤示形成 -44 - 200307337 一從陶瓷體表面（其上安裝有一晶圓）穿透至密封部分之測 量孔19。就具有相當於本發明第四實例圖6與7所示結構之 樣本而言，如圖14所示測量孔19是形成於密封構件21之内 壁而伸至其内周邊。就具有相當於本發明第四實例第一修 改例如圖8所示結構之樣本（第69至1〇7號樣本）而言，為確定 氣密度而形成從陶瓷體表面（其上安裝有一晶圓）穿透至密 封部分之測量孔。圖12至14是用於氣密特性測量之每一 ^ 本之斷面圖。在密封區(管狀構件、密封構件及陶瓷體包： 足區域）及密封部分（密封構件及陶瓷體包圍之區域）内朝箭 頭20所指方向透過以機器所形成之此一測量孔叫皮抽成真 空，接下來用氦偵測器測量每一樣本之漏洩率。其結果如 表11至汊所示。可從表„至1}(看出，按照本發明實例每一樣 本之密封區均有充分之氣密特性。 此外，密封部分（密封構件與接頭邊電極線間之接合部分 及密封構件與陶资體間之接合部分）為在用做接合構件: 破璃與管狀構件、密封構件、陶资體或電極線間彎月部分 之形成而被抽成真空。其結果如表„至”所示。從表^至… 可看出，在每個有彎月部分之支持器樣本中，密封區均有 鬲氣密特性。 關於第69至107號樣本，在點火處理中（進行密封時戌丁、 曾施加-壓力如表VHIX所示。從表¥11纽可暸解在: 封時被施加一壓力之樣本有較高氣密特性 雖然在表II至IX中並未顯示出來，但翻（M〇)與嫣（靖是 被用做形成埋入於陶资體内供電接頭之材料。當翻㈣與 -45 - 200307337 鎢W用做供電接頭之材科時，在該等特定 、 面並無可辨識出來之不同。 《之k點万 在表II土 VI中之「密封^糊& _ # # ^ 及「個別」。「六严^ r ^ ^ 二曰」、接觸」 工叫」π ^曰π +發明第—實例 中因密封構件及陶㈣是互相隔開放置，^構，其 為被密封構件、管狀構件及陶资體所密封間做 :係指如本發明第三實例之結構，其中之密封構::二 體之背面相接觸。此外，「 稱件/、陶允 Μ，, 」’、扣本夤明第四實例之結 構r為電路與接頭邊電極線間之對應連接部分提供個 ::了件。「與玻璃接觸则」一詞係指如圖8所示支 、二⑽構’、其中僅在密封構件之喊體邊提供玻璃。 、名封壤境」欄顯示在施加破璃後為將密封構件接合及 固二土電極線或管狀構件之熱處理中所用之環境。「電極線 材料」欄中所K材料是連接至用於埋入於陶資體内諸如 加熱電路、靜電電極及電㈣成電極等電路供電接頭所用‘ 之材料。 ⑩ 、、μ :以舉例方式對各實例加以說明，但本發明並非限於 、""貫4本务明之精神與範圍均說明於申請專利範圍 中除此 < 外，只要不脫離本發明之精神與範圍仍可選擇 性地有所修改。 【圖式簡單說明】 圖為本每明第一實例用於一處理裝置内一工件支持器 之斷面圖； 圖2所不為圖1工件支持器-部分之放大斷面圖； -46 - 200307337 圖3為圖1工件支转哭愈圖2所+丁 ρη、、 丁又狩⑽”口以/fTF不冋邵分之放大斷面圖； 圖4為本發明第二實例工件支持器之斷面圖； 圖5為本發明第三實例工件支持器之斷面圖； 圖6為本發明第三實例工件支持器之斷面圖，· 圖7為圖6所示支持器一部分之斷面圖； 圖8為按照本發明第四實例圖6與7所示工件支持器第一 修改例之斷面圖； 圖9為圖8所示工件支持器一部分之斷面圖； 圖10為按照本發明第四實例圖6與7所示工件支持器第二 修改例之斷面圖； 圖Π為圖10所示工件支持器一部分之斷面圖； 圖12為用於確定不透氣程度樣本之斷面圖； 圖13為用於確定不透氣程度樣本之斷面圖；及 圖14為用於確定不透氣程度樣本之斷面圖。 圖式代表符號說明 1 支持器 2 陶瓷體 3 體基座 4 電極 5 加熱電路 6，50 管狀構件 7A-7C 供電接頭 8 接頭邊電極線 9 電源邊電極線 -47- 200307337 ίο 11，21 12 13 14 15 17 18 19 25 3 4 5 6 7a ， 7b ， 7c 8 9 10 11 12 13 連接部分 密封構件 開口 玫璃 彎月形部分 末端開口部分 金銲材料 突出部 測量孔 槽 體基座 電極 加熱電路 管狀構件 供電接頭 接頭邊電極線 電源邊電極線 連接部分 密封構件 開口 玻璃 -48-ο η— * 1—α S Ο 1— * SH— ^ s Η— ^ > — * Sample No. I Example Comparative Example 1 Example 1 Example Example i Type Type | _ί Ingredient 1 Ingredient 3 | Ingredient 3 Ingredient 2 Ingredient 1 ingredient 1 ingredient 1: ¾: 菡 ingredient 2 ingredient 3 ingredient 3 ingredient 2 ingredient 1 ingredient 1 ingredient 1 tubular member material ingredient 4 1 ingredient 1 | ingredient 3 I ingredient 1 ingredient 4 ingredient 2 ingredient 1 seal member material Su 矣 B ^ 00 Contact with glass (Fig. 8) Μ Β ^ 00 Lie ML ^ 00 Z S ^ 00 Μ · Η ^ 00 Su s QO seal 2 Sealed environment Kovar Kovar 1 Kovar 1 Kovar Kovar Kovar electrode wire Material sealing load Wu cannot be sealed (glass breaks) ° όο η- Η—Α Stiai Vfili ►—k ic \ jfiu Vr 1〇_8 or less Leakage rate (Pa.m3 / s) Antioxidant power (750 in air ° C) > IX -43-200307337 Cu-w in the "f-electrode wire material" column in each table refers to copper (Cu) tungsten (W) alloy. "W-1" in the "electrode wire material" column in Table v for sample No. 38 means that the electrode wire is a layer having a 2 μm thick nickel (N: i) plating layer (hereinafter referred to as the first plating layer) Made from disease (w) -based materials. The "W-2" used in Sample No. in the "Electrode Wire Materials" column refers to those with a! Μ thick gold (Au) coating (hereinafter referred to as the second coating). Tungsten (W) -based material is used as the electrode wire coating. The "w_3" used in the "electrode wire material" column for sample No. 40 refers to a layer having a 2 μm thick nickel (Nm) layer and a 1 μm thick gold (Au ) Layer (hereinafter referred to as the third plating layer) of tungsten (w) -based material is plated thereon in this order and used as an electrode wire. "Cu-W", "Cu-W-2" and "Cu-W-3" in the "Electrode wire material" column for samples Nos. 42 to 44 means that each electrode is separately Manufactured from copper-tungsten (Cu_w) alloy-based materials with first, second, and third coatings. "Moq", ",", "Moq" for samples 46 to 48 in the "electrode wire material" column · 3, means that each electrode and wire is formed of a molybdenum (Mo) -based material having first to third plating layers, respectively. In Tables VII to IX, the seal, in the column, is in contact with the glass (Fig. 8), and a female buckle uses the type of seal used for the holder shown in Fig. 8. In order to determine the heat and oxidation resistance of the holder, each sample was heat-treated at 750 C for 15 000 hours in the air. After the heat treatment, the circuit resistance of the heating circuit or the like is measured to evaluate the oxidation condition of each sample between the electrode wire and the heating circuit or a similar circuit (power supply connector or the like). Therefore, it can be said that the holder samples formed according to the examples of the present invention have sufficient antioxidant power as shown in Figs. 2 to 9. Second, seal the air density (for the ceramic body, tubular member, and the area enclosed by the sealing member) of each sample, as shown in the figure. And ... jinshi formation -44-200307337 A measurement hole 19 penetrating from the surface of the ceramic body (on which a wafer is mounted) to the sealing portion. For a sample having a structure equivalent to that shown in Figs. 6 and 7 of the fourth example of the present invention, the measurement hole 19 shown in Fig. 14 is formed on the inner wall of the sealing member 21 and extends to the inner periphery thereof. For a sample (samples 69 to 107) having a structure equivalent to the first modification of the fourth example of the present invention, for example, as shown in FIG. 8, a ceramic body surface (with a wafer mounted thereon) is formed to determine the gas density. ) Penetrating into the measuring hole of the sealing part. 12 to 14 are cross-sectional views of each sample used for the measurement of the airtight characteristic. In the sealing area (tubular member, sealing member and ceramic body package: foot area) and sealing part (area surrounded by sealing member and ceramic body), passing through this measuring hole formed by the machine in the direction indicated by arrow 20 is called skin pumping After forming a vacuum, the leakage rate of each sample was measured with a helium detector. The results are shown in Tables 11 to 汊. It can be seen from the table „to 1} that the sealing area of each sample according to the example of the present invention has sufficient air-tight characteristics. In addition, the sealing portion (the joint portion between the sealing member and the electrode electrode line of the joint and the sealing member and the ceramic The joining part between the materials is evacuated for the formation of the meniscus between the broken glass and the tubular member, the sealing member, the ceramic body or the electrode wire. The results are shown in the table "to" From Tables ^ to…, it can be seen that in each of the samples of the holder with a meniscus, the sealing area has a gas-tight characteristic. Regarding samples Nos. 69 to 107, during the ignition process (when sealing is performed) The pressure that has been applied is shown in Table VHIX. From the table ¥ 11, it can be understood that the sample that is applied with a pressure at the time of sealing has a higher airtightness. Although it is not shown in Tables II to IX, it turns (M 〇) and Yan (Jing is used as a material to form a power supply connector embedded in the ceramic material. When turning and -45-200307337 tungsten W is used as the material branch of the power supply connector, there is no Distinguishable differences. "K-point Man in Table II Soil VI" p; _ # # ^ and "individual". "Six strict ^ r ^ ^ second", contact "work" "π ^" π + invention in the first example-because the sealing member and the pottery are placed separately from each other, ^ Structure, which is sealed by the sealed member, the tubular member and the ceramic body: refers to the structure as the third example of the present invention, in which the sealed structure: the back of the two bodies are in contact. In addition, "weighing parts, Tao Yun M ,, "" The structure r of the fourth example of the deduction is provided for the corresponding connecting part between the circuit and the electrode line on the side of the connector: a piece. The term "contact with glass" refers to Figure 8 The branch and the two structures shown 'are provided with glass only on the side of the sealing member. The column "Seal soil border" shows the heat treatment for joining the sealing member and fixing the second earth electrode wire or tubular member after the application of broken glass. The environment used in the "Electrode wire material" column is the material used to connect to the power supply connector used in the ceramic materials such as heating circuits, electrostatic electrodes and electrical forming electrodes. ⑩ ,, μ: each example is described by way of example, but the present invention is not limited to & The "spirit and scope of this book" are described in the scope of the patent application. In addition to this, as long as it does not depart from the spirit and scope of the present invention, it can be selectively modified. [Schematic description of the figure] Figure This is a cross-sectional view of the first example of a workpiece holder used in a processing device; Figure 2 is not an enlarged sectional view of the workpiece holder-part of Figure 1; -46-200307337 Figure 3 is the workpiece of Figure 1 Crowd crying. Figure 2 + D ρη ,, Ding You 又 ⑽ "/ fTF is not an enlarged cross-sectional view; Figure 4 is a cross-sectional view of the workpiece holder of the second example of the present invention; Figure 5 is Sectional view of the workpiece holder of the third example of the present invention; FIG. 6 is a sectional view of the workpiece holder of the third example of the present invention; FIG. 7 is a sectional view of a part of the holder shown in FIG. 6; Fourth Example of the Invention Sectional view of the first modified example of the workpiece holder shown in FIGS. 6 and 7; FIG. 9 is a sectional view of a part of the workpiece holder shown in FIG. 8; Sectional view of the second modified example of the workpiece holder shown in FIG. 7; FIG. Π is a sectional view of a part of the workpiece holder shown in FIG. 10 Figure 12 is a sectional view of a sample for determining the degree of airtightness; Figure 13 is a sectional view of a sample for determining the degree of airtightness; and Figure 14 is a sectional view of a sample for determining the degree of airtightness. Description of Symbols of the Drawings 1 Support 2 Ceramic Body 3 Body Base 4 Electrode 5 Heating Circuit 6, 50 Tubular Member 7A-7C Power Supply Connector 8 Connector Side Electrode 9 Power Side Electrode -47- 200307337 ίο 11, 21 12 13 14 15 17 18 19 25 3 4 5 6 7a, 7b, 7c 8 9 10 11 12 13 Connection part sealing member opening Rose glass meniscus end opening part gold welding material protruding part measuring hole groove base electrode heating circuit tube Component power supply connector connector side electrode wire power side electrode wire connection part sealing member opening glass -48-

Claims (1)

200307337 拾、申請專利範圍： 1. 一種用以支持一工件之工件支持器，包括： 一有一電路且支持一工件之陶瓷體； 一有一末端部分（第一末端部分）固定至該陶瓷體背 面之管狀構件； 一密封構件被置於該管狀構件内且接合至管狀構件 並將管狀構件内一空間分隔成兩個區域：一個在第一末 端部分邊上之區域（密封區域）及一個在相對邊上之區 域（相對區域）；及 電源供應導電構件從相對邊伸出、穿透密封構件而至 密封區域邊且電連接至該陶瓷體之電路。 2. 如申請專利範圍第1項之工件支持器，其中該密封構件 與該陶瓷體之背面接觸。 3 .如申請專利範圍第1項之工件支持器，其中該密封構件 是置於距該陶瓷體背面一段距離處。 4. 如申請專利範圍第1項之工件支持器，其中該密封構件 透過一固定接合構件接合至該陶瓷體之背面。 5. 如申請專利範圍第4項之工件支持器，其中該固定接合 構件是透過該密封構件對一種固定接合材料加熱且同 時對之施加一 100 g/cm2或更大之壓力而形成。 6. 如申請專利範圍第1項之工件支持器，其中由該密封構 件、管狀構件及陶瓷體界定之一區域為真空或非氧化環 境。 7. 如申請專利範圍第1項之工件支持器，其中從密封構 200307337 件'管狀構件及㈣體所界定區域至其 率為l〇-8PaTB3/s或更少。 埤〈氮漏洩 8.如申請專利範圍第lJf之工件支持器 與密封構件透㈣供於其間之—接合構件接;件 9·如申請專利範圍第8項之玉件支持器，其中該接合構件 是透過孩密封構件邊對一種接合材料加熱且同時對之 施加一 100 g/cm2或更大之壓力而形成。 1〇.如申請專利範圍第9項之工件支持器，其中該接合構件 有一表面從該管狀構件内表面之一部分伸至該密封構 件表面之-部分，且該接合構件之表面為一凹入彎月 形。 11.如申請專利範圍第8項之工件支持器，纟中該接合構件 有一表面從該管狀構件内表面之一部分伸至該密封構 件表面之斗刀，且遠接合構件之表面為一凹入彎月 12_如申請專利範圍第8項之工件支持器，其中該接合構件 包括玻璃。 13·如申請專利範圍第12項之工件支持器，其中該破璃為 冗11〇-3丨〇2-32〇3-基玻璃。 14.如申請專利範圍第8項之工件支持器，其中 在該密封構件與該電源供應導電構件間之接合部分 包括一提供於該密封構件與該電源供應導電構件間之 附加接合構件， 該接合構件有一表面從該密封構件表面之/部分伸 200307337 至該電源供應導電構件表面之-部分，及 3附加接合構件之表面為一凹入彎月形。 u.如申請專利範圍第巧之工件支持器，其中該密封構件 包括一種相同於形成該管狀構件封料之材料。 16·如申4專利範圍第！項之工件支持器，其中該密封構件 包括一種相同於形成該陶瓷體材料之材料。 17. 如申請專利範圍第！項之工件支持器，#中該陶資體包 括氮化鋁。 其中該電源供應 其中該電源供應 18. 如申請專利範圍第1項之工件支持器 導電構件包括一種鐵_鎳_鈷合金。 19. 如申請專利範圍第丨項之工件支持器 導電構件包括： 含有選自包括鎢、鉬與彼等合金中至少一種之基底 材料；及 k供於該基底材料表面上且含有鎳與金至少一種 之塗層。 ''種具有-如申請專利範圍第1項工件支持器之處理裝 置。 種具有一如申請專利範圍第丨項工件支持器之半導體 製造裝置。 〜種用以支持一工件之工件支持器，包括： —有一電路且支持一工件之陶资體；200307337 Scope of patent application: 1. A workpiece holder for supporting a workpiece, comprising: a ceramic body having a circuit and supporting a workpiece; a terminal portion (first terminal portion) fixed to the back of the ceramic body A tubular member; a sealing member is placed in the tubular member and joined to the tubular member and divides a space in the tubular member into two regions: a region on the side of the first end portion (sealed region) and a region on the opposite side The upper region (opposite region); and the circuit of the power supply conductive member protruding from the opposite side, penetrating the sealing member to the side of the sealing region, and electrically connected to the ceramic body. 2. The workpiece holder according to item 1 of the patent application scope, wherein the sealing member is in contact with the back surface of the ceramic body. 3. The workpiece holder according to item 1 of the patent application scope, wherein the sealing member is placed at a distance from the back of the ceramic body. 4. The workpiece holder according to item 1 of the patent application scope, wherein the sealing member is joined to the back surface of the ceramic body through a fixed joining member. 5. The workpiece holder according to item 4 of the patent application, wherein the fixed joint member is formed by heating a fixed joint material through the sealing member and applying a pressure of 100 g / cm2 or more at the same time. 6. The workpiece holder of item 1 of the patent application scope, wherein an area defined by the sealing member, the tubular member and the ceramic body is a vacuum or non-oxidizing environment. 7. The workpiece holder according to item 1 of the scope of patent application, wherein the area from the area defined by the sealed structure 200307337 'tubular member and the carcass to a rate of 10-8PaTB3 / s or less.埤 <Nitrogen leakage 8. If the workpiece holder of the patent scope lJf and the sealing member are transparently provided between them-the joint member is connected; piece 9 · Such as the jade holder of the patent scope item 8, where the joint member It is formed by heating a bonding material through the sealing member while applying a pressure of 100 g / cm2 or more. 10. The workpiece holder according to item 9 of the application, wherein the joint member has a surface extending from a portion of the inner surface of the tubular member to a portion of the surface of the sealing member, and the surface of the joint member is a concave bend Moon shape. 11. As the workpiece holder of the eighth patent application, the joint member has a bucket knife whose surface extends from a part of the inner surface of the tubular member to the surface of the sealing member, and the surface of the far joint member is a concave bend. Month 12_ The workpiece holder of item 8 of the patent application scope, wherein the joint member includes glass. 13. The workpiece holder according to item 12 of the patent application scope, wherein the broken glass is a redundant 110-320-320-based glass. 14. The workpiece holder according to claim 8 in which the joint between the sealing member and the power supply conductive member includes an additional joint member provided between the sealing member and the power supply conductive member, the joint The member has a surface extending from a portion / part of the surface of the sealing member 200307337 to a portion of the surface of the power supply conductive member, and the surface of the 3 additional joining member is a concave meniscus. u. A workpiece holder as claimed in the patent application, wherein the sealing member includes a material identical to the material forming the sealing member of the tubular member. 16. The 4th in the scope of patents as applied for! The article supporter of claim, wherein the sealing member includes a material identical to a material forming the ceramic body. 17. Such as the scope of patent application! Item of the workpiece support, # in the ceramic material includes aluminum nitride. Wherein the power supply wherein the power supply 18. The workpiece holder according to item 1 of the patent application, the conductive member includes an iron-nickel-cobalt alloy. 19. The conductive member of the workpiece holder according to the scope of the patent application includes: containing a base material selected from the group consisting of tungsten, molybdenum and their alloys; and k provided on the surface of the base material and containing at least nickel and gold One kind of coating. '' A kind of processing device with-as in the patent application scope No. 1 workpiece holder. The invention relates to a semiconductor manufacturing device having a workpiece holder as described in the patent application. ~ A workpiece holder for supporting a workpiece, including:-a ceramic body having a circuit and supporting a workpiece; 連接至該管狀構件内連接部分處一電路之電2 20030^337 應導電構件；及 一置於該管狀構件内且接合至位於該管狀構件内連 接部分處陶瓷體之密封構件； 置於該管狀構件内且固定至該陶瓷體背面而形成每 個刀別圍住連接部分被密封部分之一些密封構件； ”中忒等松封構件將連接部分之被密封部分與圍著 該密封構件外周邊之環境隔開。 23. 如申請專利範圍第22項之工件支持器，其中該電源供應 導電構件與電路連接於一起之連接部分之密封部分為 真空或非氧化環境。 24. 如申請專利範圍第23項之工件支持器，其中從該電源供 應導電構件與電路連接於一起之連接部分之密封部分 至其他區域之氦漏洩率為l(T8Pa.m3/s或更少。 25. 如中請專利範圍第22項之卫件支持器，其巾從該電源供 應導電構件與電路連接於一起之連接部分之密封部分 至其他區域之氦漏洩率為1〇-8pa.m3/s或更少。 26. 如中請專利範_第22項之工件支持器，其中該接合部分 包括提供於孩陶瓷體與該密封構件間之接合構件。 27·如申請專利範圍第26項之工件支持器，其中該接合構件 是對一種接合材料加熱且同時透過該密封構件對之施 加一 100 g/cm2或更大之壓力而形成。 28·如申請專利範圍第27項之工件支持器，其中該接合構件 有一表面從該陶資體表面之一部分伸至該密封構件表 面之一部分，且該接合構件之表面為凹入彎月形。 200307337 29 30 31 32 33. 34. 35. 36. 37. 如申請專利範圍第26項之工件支持器，其找接合構件 有一表面從該陶资體表面之一部分伸至該密封構件表 面之α卩分，且該接合構件之表面為凹入彎月形。 如申請㈣範圍第26項之工件支持器，其中該接合材料 包括玻璃。 ’ .如申請專利範圍第3〇項之工件支持器，其中該坡璃為 Zn0-Si02-B2〇3-基玻璃。 .如申請專利範圍第26項之工件支持器，其中 在該密封構件與電源供應導電構件間之接合部分包 括-提供#該密封構件與#電源供應㈣構件間之: 加接合構件， ' 孩接合構件有一表面從該密封構件表面之一部分伸 至該電源供應導電構件表面之一部分，及 該附加接合構件之表面為一凹入彎月形。 如申請專利範圍第22項之工件支持器，其中該密封構件 包括一種相同於形成該管狀構件材料之材料。 如申請專利範圍第22項之王件支持器，其中該密封構件 包括一種相同於形成該陶瓷體材料之材料。 如申請專利範圍第22項之工件支持器，其中該陶资體包 括氮化銘。 如申請專利範圍第2 2項之工件支持器，其中該電源供應 導電構件包括一種鐵-鎳-鈷合金。 如申請專利範圍第22項之工件支持器，其中該電源供應 導電構件包括： 200307337 含有選自包括鎢、4目及彼等合金中至少一種之基底材 料；及 提供於該基底材料表面上且含有鎳與金至少一種之 塗層。 3 8. —種具有一如申請專利範圍第22項工件支持器之處理 裝置。 39. —種具有一如申請專利範圍第22項工件支持器之半導 體製造裝置。 -6 -Electricity to be connected to a circuit at the inner connecting portion of the tubular member 2 20030 ^ 337 should be a conductive member; and a sealing member placed in the tubular member and joined to a ceramic body at the inner connecting portion of the tubular member; placed in the tubular member Inside the component and fixed to the back of the ceramic body to form some sealing members that each encloses the sealed portion of the connecting portion; loose sealing members such as "Zhongli" connect the sealed portion of the connecting portion with the surrounding portion of the sealing member. The environment is separated. 23. For example, the workpiece holder of the scope of patent application No. 22, wherein the sealed part of the connection part of the power supply conductive member and the circuit is vacuum or non-oxidizing environment. Item of the workpiece holder, wherein the leakage rate of helium from the sealed portion of the connection portion where the power-conducting conductive member and the circuit are connected together to other areas is l (T8Pa.m3 / s or less. 25. Patent scope as requested Item 22. The sanitary supporter of item 22 has a helium leak from a sealed portion of a connection portion where the power-conducting conductive member and the circuit are connected together to a helium leak in other areas The leakage rate is 10-8pa.m3 / s or less. 26. The workpiece holder of the 22nd item, such as the patent claim, wherein the joint portion includes a joint member provided between the ceramic body and the sealing member. 27. The workpiece holder according to item 26 of the application for a patent, wherein the joining member is formed by heating a joining material and applying a pressure of 100 g / cm2 or more through the sealing member at the same time. 28. If applying The workpiece holder of the 27th aspect of the patent, wherein the joint member has a surface extending from a part of the ceramic body surface to a part of the sealing member surface, and the surface of the joint member is concave meniscus. 200307337 29 30 31 32 33. 34. 35. 36. 37. For the workpiece holder of the 26th scope of the patent application, the joint-seeking member has a surface extending from a part of the surface of the ceramic body to the surface of the sealing member, and the The surface of the joining member is concave meniscus. For example, the workpiece holder of the 26th scope of the application, wherein the joining material includes glass. '. For the workpiece holder of the 30th scope of the patent application, the slope glass is Zn0-Si02-B2 03-based glass. The workpiece holder such as the scope of application for patent No. 26, wherein the joint portion between the sealing member and the power supply conductive member includes-providing # 此 封 件 与 # 动力 保护Between the members: plus the joining member, the child joining member has a surface extending from a part of the surface of the sealing member to a part of the surface of the power supply conductive member, and the surface of the additional joining member is a concave meniscus. The workpiece holder of the scope item 22, wherein the sealing member includes a material identical to the material forming the tubular member. For example, the king piece holder of the patent application scope item 22, wherein the seal member includes a ceramic body identical Materials of materials. For example, the workpiece holder of the scope of application for patent No. 22, wherein the ceramic body includes a nitride inscription. For example, the workpiece holder of claim 22, wherein the power supply conductive member includes an iron-nickel-cobalt alloy. For example, the workpiece holder of claim 22, wherein the power supply conductive member includes: 200307337 containing a base material selected from the group consisting of tungsten, 4 mesh and their alloys; and provided on the surface of the base material and containing A coating of at least one of nickel and gold. 3 8. —A processing device having a workpiece holder as in the scope of patent application No. 22. 39. A semiconductor manufacturing device having a workpiece holder as in the scope of patent application No. 22. -6-
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DE102011009858B8 (en) 2011-01-31 2013-11-07 Heraeus Precious Metals Gmbh & Co. Kg Cermet-containing bushing for a medically implantable device with a bonding layer
DE102011009867B4 (en) 2011-01-31 2013-09-05 Heraeus Precious Metals Gmbh & Co. Kg Ceramic bushing for a medically implantable device
DE102011009855B8 (en) 2011-01-31 2013-01-03 Heraeus Precious Metals Gmbh & Co. Kg Ceramic bushing with inductive filter
KR101345693B1 (en) * 2011-11-29 2013-12-30 (주)티티에스 Substrate holder module
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KR102331072B1 (en) * 2018-04-27 2021-11-29 엔지케이 인슐레이터 엘티디 Wafer support
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