TWI269934B - Mask for improving lithography performance by using multi-transmittance photomask - Google Patents
Mask for improving lithography performance by using multi-transmittance photomask Download PDFInfo
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- TWI269934B TWI269934B TW92132106A TW92132106A TWI269934B TW I269934 B TWI269934 B TW I269934B TW 92132106 A TW92132106 A TW 92132106A TW 92132106 A TW92132106 A TW 92132106A TW I269934 B TWI269934 B TW I269934B
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- 238000002834 transmittance Methods 0.000 title claims abstract description 112
- 238000001459 lithography Methods 0.000 title description 14
- 239000000463 material Substances 0.000 claims abstract description 51
- 230000010363 phase shift Effects 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 17
- 239000002356 single layer Substances 0.000 claims description 14
- 229910016006 MoSi Inorganic materials 0.000 claims description 4
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims description 3
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 claims description 3
- BYUANIDVEAKBHT-UHFFFAOYSA-N [Mo].[Bi] Chemical compound [Mo].[Bi] BYUANIDVEAKBHT-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- LNYNDJNVGPEYII-UHFFFAOYSA-N oxomolybdenum ruthenium Chemical compound [Mo]=O.[Ru] LNYNDJNVGPEYII-UHFFFAOYSA-N 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 29
- 238000004904 shortening Methods 0.000 abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 38
- 230000008569 process Effects 0.000 description 23
- 238000002955 isolation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910001092 metal group alloy Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
1269934 五、發明說明（1) 【發明所屬之技術領域】 本發明是有關於一種半導體製程，且特別是有關於一 種半調式光罩。 【先前技術】 微影製程是半導體工業製程中的步驟之一。在一半導 體的製造過程中，通常需要實行多次的微影製程。而且微 影製程是重要的製程之一，就像是積體電路決定最大密度 以及最終可靠度的限制性製程之一。微影製程對於電晶體 與内連線之金屬層和插塞的定位以及確保其一致性來說是 特別重要的。 一般的微影製程例如是在工作表面上以旋轉塗佈法沈 積一層光阻層。其中光阻層係可以暴露於紫外光或是其他 輻射光之下，以使其圖案化。工作表面可以是一半導體晶 圓、内連線層或是其他層，其取決於積體電路現時的製造 階段。由於光阻層具有感光性，因此可藉由暴露此光阻層 於一對應圖案之光線下而將其圖案化。 在曝光的過程中，被光阻層所覆蓋住的晶圓係配置在 一光罩之下，且此光罩係設計用以避免輻射光穿透光阻層 的某些部位。接著在光阻的預定範圍内進行聚合或非聚合 作用，其可以是一自然函數與光阻曝光程度的程度。 光罩是由遮光區與其他允許光線由光源射透至光阻層 的區域而形成圖案，且光罩所產生之光的圖案通常是形成 於晶圓上的單一晶粒。在光罩與光阻層間可定位一組透 鏡，以便於縮小圖案的尺寸，並將光圖案聚焦於晶粒上。1269934 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a semiconductor process, and more particularly to a half-tone mask. [Prior Art] The lithography process is one of the steps in the semiconductor industry process. In the manufacturing process of half of the conductor, it is usually necessary to perform multiple lithography processes. And the lithography process is one of the important processes, just like one of the more restrictive processes that the integrated circuit determines the maximum density and ultimate reliability. The lithography process is particularly important for the positioning of the metal layers and plugs of the transistors and interconnects and for ensuring their uniformity. A typical lithography process is, for example, to deposit a layer of photoresist on a work surface by spin coating. The photoresist layer can be exposed to ultraviolet light or other radiant light to pattern it. The working surface can be a semiconductor wafer, interconnect layer or other layer depending on the current manufacturing stage of the integrated circuit. Since the photoresist layer is photosensitive, it can be patterned by exposing the photoresist layer to light of a corresponding pattern. During the exposure process, the wafer covered by the photoresist layer is disposed under a mask, and the mask is designed to prevent radiation from penetrating certain portions of the photoresist layer. Polymerization or non-polymerization is then carried out within a predetermined range of the photoresist, which may be a natural function and the extent of exposure of the photoresist. The reticle is patterned by a opaque area and other areas that allow light to be transmitted through the source to the photoresist layer, and the pattern of light produced by the reticle is typically a single dies formed on the wafer. A set of lenses can be positioned between the reticle and the photoresist layer to reduce the size of the pattern and focus the light pattern on the die.
9645twf.ptd 第5頁 1269934 五、發明說明（2) 微影工具係在晶圓上從一個晶粒移至下一個晶粒步進，並 重複此製程直到晶圓上所有選定之晶粒皆曝光於光罩所產 生的光圖案下。 在曝光製程後，可將晶圓放置在一種稱為顯影劑的化 學洗滌液中，並利用顯影劑沖洗晶圓一段指定的時間，使 顯影劑溶解光阻中剩餘之相對地非聚合的部分。晶圓上的 光阻層由光罩得到圖案後，即稱為圖案化之光阻層。工作 表面上光阻層的存在或缺乏即形成積體電路之後續製程步 驟中所使用的圖案或模版。舉例來說，在微影步驟之後， 可能會在無光阻的曝光區域上進行蝕刻或是離子植入製 程，以繼續積體電路的製程。 若在同一光罩上有兩個不同尺寸或是不同密度的圖 案，則在由光罩轉移至光阻的圖案上可能會發生線末端短 縮（line edge shortening ，LES)與圓角化（corner rounding )、孤立區至密集區之線寬偏差（iso - to-dense bias )以及邊緣區至密集區（edge - to-dense bias)之線 寬偏差的問題。 為了解決上述之問題，習知的方法係利用兩個光罩以 及兩步驟的曝光來克服此問題。第二光罩與第二曝光步驟 係用以改善隔離區至密集區與邊緣區至密集區之線寬偏差 以及線末端短縮的問題。由於此方法需要兩個光罩與兩次 曝光步驟，因此此方法較為複雜且成本較高。此外，使用 兩個光罩可能會增加對位（A 1 i g n m e n t )方面的問題。 另一種應付上述問題的習知方法係將次解析度的輔助9645twf.ptd Page 5 1269934 V. INSTRUCTIONS (2) The lithography tool moves from one die to the next in the die and repeats the process until all selected dies on the wafer are exposed. Under the light pattern produced by the reticle. After the exposure process, the wafer can be placed in a chemical wash solution called a developer and the wafer is rinsed with the developer for a specified period of time to cause the developer to dissolve the remaining non-polymerized portions of the photoresist. After the photoresist layer on the wafer is patterned by the photomask, it is called a patterned photoresist layer. The presence or absence of a photoresist layer on the working surface forms the pattern or stencil used in subsequent processing steps of the integrated circuit. For example, after the lithography step, an etch or ion implantation process may be performed on the exposed area of the photoresist to continue the process of the integrated circuit. If there are two different sizes or different density patterns on the same mask, line edge shortening (LES) and corner rounding may occur on the pattern transferred from the mask to the photoresist. ), the problem of the line-width deviation (iso-to-dense bias) from the isolated area to the dense area and the line-to-dense bias of the edge-to-dense bias. In order to solve the above problems, the conventional method overcomes this problem by using two masks and two-step exposure. The second mask and the second exposure step are used to improve the line width deviation from the isolation region to the dense region and the edge region to the dense region and the problem of the end of the line being shortened. Since this method requires two masks and two exposure steps, this method is more complicated and costly. In addition, the use of two masks may increase the problem of alignment (A 1 i g n m e n t ). Another conventional method for dealing with the above problems is the assistance of sub-resolution
9645twf.ptd 第6頁 1269934 五、發明說明（3) 特徵圖案（SRAFs )附加於原有之圖案上。次解析度的輔 助特徵圖案例如是附加在光罩上之孤立線附近的小特徵圖 案，其可用以分散光線，使此處之光線分佈與密集線附近 的光線分佈情形相似。此方法已成為一種可以有效減少孤 立區至密集區之線寬偏差的方法。然而，當尺寸縮小而線 密度增加時，次解析度的輔助特徵圖案甚至會太大，因而 不適合將其配置在一給定的圖案中，用以降低例如是線末 端短縮以及孤立區至密集區之線寬偏差的問題。 習知技藝中的需求即是要有效且有效率地減少問題， 例如是細線圖案之孤立區至密集區之線寬偏差的問題。而 其更進一步的需求則是有效且有效率地減少例如是細線結 構之線末端短縮的問題。 【發明内容】 一種利用多階透射率光罩以提高微影效能的裝置，且 依照本發明之某些觀點，此裝置還可以係利用多階透射率 的半調式相位移光罩（HTPSM )來提高微影效能。此光罩 包括一透明基底以及配置於透明基底上的第一圖案與第二 圖案。其中第二圖案的尺寸比第一圖案較大（例如是較長 )或是密度較密，且第一圖案之透射率高於第二圖案之透 射率。利用本發明之多階透射率光罩可改善隔離區至密集 區與邊緣區至密集區之線寬偏差的問題，而且依次使用本 發明之多階透射率光罩還可以提高臨界尺寸的一致性以及 /或是擴大共有窗（common window)。因此，本發明的多 種實行方式可至少提供縮小的孤立區至密集區與邊緣區至9645twf.ptd Page 6 1269934 V. INSTRUCTIONS (3) Feature patterns (SRAFs) are attached to the original pattern. The secondary resolution auxiliary feature pattern is, for example, a small feature pattern attached to an isolated line on the reticle that can be used to disperse light such that the light distribution there is similar to the distribution of light near the dense line. This method has become a method for effectively reducing the line width deviation from the isolated region to the dense region. However, when the size is reduced and the line density is increased, the sub-resolution auxiliary feature pattern is even too large, so it is not suitable to be configured in a given pattern to reduce, for example, line end shortening and isolated areas to dense areas. The problem of line width deviation. A requirement in the prior art is to effectively and efficiently reduce the problem, such as the problem of line width deviation from the isolated area to the dense area of the thin line pattern. A further need is to effectively and efficiently reduce the problem of shortening of the end of the line, for example, of a thin wire structure. SUMMARY OF THE INVENTION A device that utilizes a multi-order transmittance mask to improve lithography performance, and in accordance with certain aspects of the present invention, the device can also utilize a multi-level transmittance half-tone phase shift mask (HTPSM). Improve lithography performance. The reticle includes a transparent substrate and a first pattern and a second pattern disposed on the transparent substrate. Wherein the size of the second pattern is larger (e.g., longer) than the first pattern or denser, and the transmittance of the first pattern is higher than the transmittance of the second pattern. The multi-level transmittance mask of the present invention can improve the line width deviation from the isolation region to the dense region to the edge region to the dense region, and the multi-level transmittance mask of the present invention can be used to improve the critical dimension consistency. And / or expand the common window. Thus, various embodiments of the present invention can provide at least a reduced isolated area to a dense area and an edge area to
9645twf.ptd 第7頁 12699349645twf.ptd Page 7 1269934
五、發明說明（4) 密集區之線寬偏差、線末端短縮、提高 以及增加或擴大的共有窗其中之一。的&界尺寸均勻性 此處所述之任何特徵的獨特性質及苴纟士 本發明之範圍内，而且此特徵間的結合2 g f，括在 广月中之某些觀點、優點以及顯著的；’ 處。然而，必須瞭解的是，所有的此4b ‘ ίf述於此 ?不-定要被收在本發明之任何特別的點2特 =之上述和其他目的、特徵和優點= 為讓本 T J -較佳實施例’並配合所附圖式 ^ 二下文 【實施方式】 下评、、、田說明如下。 現在將對本發明的較佳實施例詳盡 门=附圖說明。只要有可能，在 :參2，並 i的說明以及“ = =揭=中提供清 ;:左而：些：，的用詞：例如‘依：比例 式為基準。這 =:4方以及後方，皆以所附之圖 圍有任何模以：性的用詞不應被解釋為對本發明之Ξ 制 施例 瞭解ίί本：：ί;㈣以某些實施例做為參考…需 制1下所將；為子而非：發明之； 但其真正的目的是要讓實 =2示範性的實 之所有變型、替代以V. INSTRUCTIONS (4) One of the common window of line width deviation, line end shortening, improvement and increase or enlargement in dense areas. &Boundary Uniformity The unique nature of any of the features described herein and the scope of the Gentleman's invention, and the combination of this feature 2 gf, including some of the views, advantages, and significant aspects of the Guangyue ;' However, it must be understood that all of this 4b' ίf is described herein? It is not intended to be included in any particular point 2 of the present invention and the other objectives, features and advantages of the present invention. The preferred embodiment 'and the accompanying drawings ^ 2 below [Embodiment] The following review, and, Tian said as follows. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will now be described. Whenever possible, in the description of: 2, and i and "= = reveal = in the clear;: left and: some:, the word: for example, according to: proportional formula. This =: 4 square and rear Any reference to the attached drawings is not intended to be construed as an understanding of the embodiments of the present invention. ίί:: ί; (d) with some examples as a reference... But rather than: invented; but its real purpose is to make all the variants of the real =2 exemplary
1269934 五、發明說明（5) 及等價物，皆涵蓋於 範圍内。其中必須瞭 驟中，並未涵蓋光罩 光罩製造技術實踐本 步驟只是提供用以理 來說在光罩製造領域 的，以下將描述有關 依照本發明所述 作為克服線末端短縮 區之線寬偏差問題的 末端短、孤立區至· 差的光罩之上視圖。 間結構1 0較與其相鄰 量例如是孤立區至密 如光罩1之中間結構1 量邊緣區至密集區之 在光罩的製造過 行此製程。初始步驟 此寫入工具會將所需 的空白處通常是由* 金屬層或金屬合金層 進行圖案化前，會以 表層。電路圖案係透 寫入光罩的阻劑上。 與步種行般目 可集 t偏，測 實，罩薄在的而阻 中异有 神造各實一的 罩密Λ寬、U ,」以 來中光積。罩統光 定 於以置 精製的地明明 光至決線由ffli用 驟具而沈英光系之 的與知般發說。的區P之 U可 步工。上石於成罩 圍構習一本了法案緣1區 U ，隙 之入處底是蓋生光 範結用多而為方圖邊固集0罩2:間 同寫白基如覆案變 利之利許。，造率及Μ密tl光罩的 不一空於例阻圖改 專述可之驟而製射以 至Μ此光線 種進的並質光束會 請敘。述步然的透區一一區U因。心 多存罩，材或子束 9graJ 申處程所需。罩階集纟〕緣 ，差中 以案光成的層電子 係 中 明此流處必性光多密 邊 小偏之 會圖進構底膜或電 圖 一 發在造此的用式有至 及•為寬.2。常路刻所基的束或 1 有 6^ 本，製而明實調具區第以 線線Tfe差通電蝕底明性光束 之是有，發有半種立。區1"案之而偏，一案基透射射光 附的所明本具種一孤具集罩圖區，寬中將圖明而反雷射 後解的發解中一，、工密光之集G線程是之透。無過雷1269934 V. Description of invention (5) and equivalents are covered. It is necessary to cover the reticle reticle manufacturing technology practice. This step is only provided for the purpose of reticle manufacturing. The following will describe the line width as a cross-sectional area shortening according to the present invention. The end of the deviation problem is short, the isolated area is to the top view of the poor mask. The intermediate structure 10 is adjacent to the adjacent portion, for example, the isolated region to the intermediate structure 1 of the mask 1, and the edge region to the dense region. This process is performed in the manufacture of the mask. Initial Steps This writing tool will surface the desired blanks before they are typically patterned by a metal layer or metal alloy layer. The circuit pattern is transmissive to the resist of the reticle. It can be combined with the step-by-step method. It can be t-biased, measured, and the cover is thin and the difference between the two is different. The cover is dense and wide, U," The cover light is set to be used to set the refined bright light to the front line by ffli and the Shen Yingguang system. The U of the district P can be step by step. On the stone, Yu Yucheng encircled a copy of the bill from the 1st district U. The bottom of the gap is the cover of the Guangguang Fan knot and the square map is fixed. 0 Cover 2: Write the white base as the case is changed. Promises. , the rate of production and the density of the tl reticle are not empty, and the condensed light beam will be described. The U-zone of the one-to-one zone. The heart is covered with a cover, material or beam of hair. 9graJ is required for the application. The cover is set to the edge of the cover, and the difference between the light and the layer of the electron system is that the flow is more than the dense side, and the small film is placed in the bottom film or the electric picture. And • is wide. 2. The beam or the base of the constant path is 6^, and the line of the Tfe is the same as the line of the Tfe. The area 1" case is biased, the case-based transmission of the light attached to the Mingben has a kind of orphan cover map area, the wide middle will be illustrated and the anti-laser solution will be solved in the first, the work secret light Set G thread is transparent. No thunder
9645twf.ptd 第9頁 1269934 五、發明說明（6) 的暴露部分之分子，就像其改變晶圓之阻劑的分子一樣。 接著再進行阻劑的顯影，其中光阻暴露出的部分會被溶解 而在光罩上留下圖案以進行蝕刻。 蝕刻製程是一化學製程，其係選擇性地蝕刻金屬層/ 金屬合金層而非光阻。餘刻製程可以包括 '屋式餘刻或乾式 蝕刻。在溼式蝕刻中，光罩係浸於一化學洗滌液中，此洗 滌液可蝕刻被移除之光阻下所暴露出的金屬/金屬合金 層。而在乾式餘刻中，所暴露出的金屬/金屬合金層係藉 由易反應的化學物質以及物理轟擊而移除。由於在未來之 健全的晶圓製程中，光罩之圖案的準確性是相當關鍵的， 因此需對光罩進行缺陷檢測。若檢測結果發現光罩出現任 何缺陷，可能的話則對其進行修補。舉例來說，若缺陷係 出現於無金屬層/金屬合金層之區域中，則金屬層/金屬合 金層可選擇性地沈積在此區域中。一旦修補過圖案，則需 再進行光罩的臨界尺寸（Critical Dimensions，CDs)與 圖案尺寸的測量、光罩的清洗以及第二次的檢測。 第2圖係依照本發明之第一實施例繪示第一與第二光 罩之剖面示意圖，且第一與第二光罩係具有與第1圖中之 圖案相對應的圖案。兩光罩中之每一光罩皆包括一透明基 底，且此透明基底可以是包括石英或是其他任何適當或相 容的材質。第一圖案與第二圖案皆係形成於透明基底上， 其中第二圖案係大於第一圖案（例如是比第一圖案長）， 或是較第一圖案為密集。而第一圖案具有一第一透射率， 且第二圖案具有一第二透射率，其中第一透射率高於第二9645twf.ptd Page 9 1269934 V. Molecules of the exposed part of the invention (6), just like the molecules that change the resist of the wafer. The development of the resist is then carried out, wherein the exposed portions of the photoresist are dissolved to leave a pattern on the mask for etching. The etching process is a chemical process that selectively etches the metal layer/metal alloy layer instead of the photoresist. The engraved process can include 'house-style or dry etching. In wet etching, the reticle is immersed in a chemical wash which etches the exposed metal/metal alloy layer under the removed photoresist. In the dry remnant, the exposed metal/metal alloy layer is removed by reactive chemicals and physical bombardment. Since the accuracy of the pattern of the reticle is critical in future robust wafer processes, defect inspection of the reticle is required. If the test results in any defects in the mask, repair it if possible. For example, if a defect occurs in a region free of a metal layer/metal alloy layer, a metal layer/metal alloy layer can be selectively deposited in this region. Once the pattern has been repaired, the critical dimensions of the mask (Critical Dimensions, CDs) and the measurement of the pattern size, the cleaning of the mask, and the second inspection are performed. Fig. 2 is a schematic cross-sectional view showing the first and second reticle according to the first embodiment of the present invention, and the first and second reticle have patterns corresponding to the patterns in Fig. 1. Each of the two reticles includes a transparent substrate, and the transparent substrate can be made of quartz or any other suitable or compatible material. The first pattern and the second pattern are both formed on the transparent substrate, wherein the second pattern is larger than the first pattern (for example, longer than the first pattern) or denser than the first pattern. The first pattern has a first transmittance, and the second pattern has a second transmittance, wherein the first transmittance is higher than the second
9645twf.ptd 第10頁 1269934 五、發明說明（7) 透射率。此處所指的透射率，係指在給定的一物體上（例 如是一圖案），穿透此物體之輻射能與入射此物質之總輻 射能的比率。 在兩光罩中的每一光罩上，第一圖案20係由一半調式 材質所構成，並具有一第一厚度，而第二圖案25係由一半 調式材質所構成，並具有一第二厚度2 5。依照本發明之一 觀點所述，因為第二透射率係被選定為較第一透射率低， 所以第二厚度2 5係大於第一厚度2 0。一厚層可利用兩次沈 積與蝕刻以獲得兩種不同之厚度，而且可於兩層間***一 蝕刻終止層，以促進一蝕刻終止製程。此外，亦可藉由精 準地計算蝕刻時間來控制圖案精確的厚度。半調式材質包 括有矽化鉬（MoSi )或氮化矽鉬（MoSiN)其中之一。本 實施例發現，若將第一透射率選為約2 7 %，而第二透射率 選為約6 %，即可提供增強的臨界尺寸之一致性、縮小的 孤立區至密集區與邊緣區至密集區之線寬偏差、線末端短 縮以及擴大之共有窗其中至少一種。 第3圖係依照本發明之第二實施例繪示第一與第二光 罩之剖面示意圖，且第一與第二光罩係具有與第1圖中之 圖案相對應的圖案。如第2圖之實施例所述，第一與第二 光罩包括透明基底，且透明基底包括石英或任何其他適合 之材質。第一圖案與第二圖案皆係形成於透明基底上。其 中第二圖案係較第一圖案為長或密集。第一圖案具有第一 透射率，且第二圖案具有第二透射率。其中，第一透射率 高於第二透射率且足以促進下列所述至少其中之一：一增9645twf.ptd Page 10 1269934 V. INSTRUCTIONS (7) Transmittance. Transmittance as used herein refers to the ratio of the radiant energy passing through an object to the total radiant energy incident on a given object (e.g., a pattern). On each of the two reticle, the first pattern 20 is composed of a half-tone material and has a first thickness, and the second pattern 25 is composed of a half-tone material and has a second thickness. 2 5. According to one aspect of the invention, the second thickness 25 is greater than the first thickness 20 because the second transmittance is selected to be lower than the first transmittance. A thick layer can be deposited and etched twice to obtain two different thicknesses, and an etch stop layer can be interposed between the two layers to facilitate an etch stop process. In addition, the precise thickness of the pattern can be controlled by accurately calculating the etching time. The semi-tone material includes one of molybdenum molybdenum (MoSi) or molybdenum nitride (MoSiN). This embodiment finds that if the first transmittance is selected to be about 27% and the second transmittance is selected to be about 6%, the consistency of the enhanced critical dimension, the reduced isolated region to the dense region and the edge region can be provided. At least one of a line width deviation to a dense area, a short end of the line, and an enlarged common window. Fig. 3 is a cross-sectional view showing the first and second reticle according to a second embodiment of the present invention, and the first and second reticle have patterns corresponding to the patterns in Fig. 1. As described in the embodiment of Figure 2, the first and second masks comprise a transparent substrate, and the transparent substrate comprises quartz or any other suitable material. The first pattern and the second pattern are both formed on the transparent substrate. The second pattern is longer or denser than the first pattern. The first pattern has a first transmittance and the second pattern has a second transmittance. Wherein the first transmittance is higher than the second transmittance and is sufficient to promote at least one of the following:
9645twf.ptd 第11頁 1269934 五、發明說明（8) 強的臨界尺寸一致性、縮小的孤立區至密集區與邊緣區至 密集區之線寬偏差、線末端短縮以及擴大之共有窗。 在本實施例中，第一圖案係一單層之半調式材質層3 0，而 第二圖案係一雙層之半調式材質層35。單層之半調式材質 層30例如是包括有（a ) —矽化鉬（MoSi )層以及（b ) — 氮化矽鉬（MoSiN )層其中之一。而雙層之半調式材質層 35例如是包括有（a) —硬化钥-氧化铷（MoSi-RuO)複合 層以及（b) —氮化石夕錮-氧化敛1 (MoSiN-RuO)複合層其 中之一。本實施例之第一透射率係選定為約2 7 %，且第二 透射率係選定為約6%。 第4圖係依照本發明之第三實施例繪示第一與第二光 罩之剖面示意圖，且第一與第二光罩係具有與第1圖中之 圖案相對應的圖案。如同前述之實施例，第一與第二光罩 包括透明基底，且透明基底包括石英或任何其他適合之材 質。第一圖案與第二圖案皆係形成於透明基底上。其中第 二圖案係較第一圖案為長或密集。第一圖案具有第一透射 率，且第二圖案具有第二透射率。其中，第一透射率高於 第二透射率。且第一圖案係具有第一厚度且相位移180度 的半調式材質40。而第二圖案係具有第二厚度45且相位移 1 8 0度的半調式材質。依據本發明之一特徵，由於第二透 射率係被設定為較第一透射率低，因此第二厚度4 5係大於 第一厚度，用以提供增強的臨界尺寸之一致性、縮小的孤 立區至密集區與邊緣區至密集區之線寬偏差、線末端短縮 以及擴大之共有窗其中至少一種。在本實施例中，第一圖9645twf.ptd Page 11 1269934 V. INSTRUCTIONS (8) Strong critical dimension uniformity, reduced line width deviation from the isolated area to the dense area and the edge area to the dense area, the line end shortening and the enlarged common window. In this embodiment, the first pattern is a single layer of semi-tone material layer 30, and the second pattern is a double layer semi-tone material layer 35. The monolayer half-tone material layer 30 is, for example, one of (a) - molybdenum molybdenum (MoSi) layer and (b) - hafnium nitride molybdenum (MoSiN) layer. The double-layered half-tone material layer 35 includes, for example, (a) a hardened molybdenum-doped yttrium oxide (MoSi-RuO) composite layer and (b) a nitride-nitride-oxidized 1 (MoSiN-RuO) composite layer. one. The first transmittance of this embodiment was selected to be about 27%, and the second transmittance was selected to be about 6%. Fig. 4 is a cross-sectional view showing the first and second masks according to a third embodiment of the present invention, and the first and second masks have patterns corresponding to the patterns in Fig. 1. As with the previous embodiments, the first and second reticles comprise a transparent substrate, and the transparent substrate comprises quartz or any other suitable material. The first pattern and the second pattern are both formed on the transparent substrate. The second pattern is longer or denser than the first pattern. The first pattern has a first transmittance and the second pattern has a second transmittance. Wherein the first transmittance is higher than the second transmittance. And the first pattern is a halftone material 40 having a first thickness and a phase shift of 180 degrees. The second pattern is a semi-tone material having a second thickness 45 and a phase shift of 180 degrees. According to a feature of the invention, since the second transmittance is set to be lower than the first transmittance, the second thickness 45 is greater than the first thickness to provide enhanced critical dimension uniformity, reduced isolated regions At least one of a wide window deviation from the dense area to the edge area to the dense area, the line end shortening, and the enlarged common window. In this embodiment, the first figure
9645twf.ptd 第12頁 1269934 五、發明說明（9) 案係形成為具有一第一透射率之圖案，且第一透射率約為 27%。而第二圖案係形成為具有一第二透射率之圖案，且 第二透射率約為6 %。 請參照第5圖，其係依照本發明之第四實施例繪示第 一與第二光罩之剖面示意圖，且第一與第二光罩係具有與 第1圖中之圖案相對應的圖案。其中兩光罩中的每一光罩 皆包括一透明基底，例如是石英基底。第一圖案與第二圖 案皆係形成於透明基底上。其中第二圖案係較第一圖案為 長或密集。第一圖案具有第一透射率，且第二圖案具有第 二透射率。其中，第一透射率高於第二透射率。而第一圖 案為一相位移為180度之單層半調式材質層50，且第二圖 案為一相位移為180度之雙層半調式材質層55。9645twf.ptd Page 12 1269934 V. INSTRUCTION DESCRIPTION (9) The case is formed into a pattern having a first transmittance, and the first transmittance is about 27%. The second pattern is formed to have a pattern of a second transmittance, and the second transmittance is about 6%. Referring to FIG. 5, a cross-sectional view of the first and second photomasks is illustrated in accordance with a fourth embodiment of the present invention, and the first and second photomasks have patterns corresponding to the patterns in FIG. . Each of the two reticles includes a transparent substrate, such as a quartz substrate. Both the first pattern and the second pattern are formed on a transparent substrate. The second pattern is longer or denser than the first pattern. The first pattern has a first transmittance and the second pattern has a second transmittance. Wherein the first transmittance is higher than the second transmittance. The first pattern is a single-layer half-tone material layer 50 with a phase shift of 180 degrees, and the second pattern is a double-layer half-tone material layer 55 with a phase shift of 180 degrees.
在本實施例中，單層半調式材質層5 0例如是包括有 (a) —矽化鉬（MoSi)層以及（b) —氮化矽鉬（MoSiN )層其中之一。此外，本實施例中之雙層半調式材質層55 例如是包括有（a) —石夕化錮-氧化#〇 (MoSi-RuO)複合層 以及（b ) —氮化矽鉬-氧化铷（MoSiN-RuO )複合層其中 之一。在變化的實施例中，單層半調式材質層5 0以及/或 雙層半調式材質層5 5還可以係由其他材質所構成，只要能 獲得增強的臨界尺寸之一致性、縮小的隔離區至密集區與 邊緣區至密集區之線寬偏差、線末端短縮以及擴大之共有 窗其中一或多種即可。如本實施例所述，雖然單層半調式 材質層的第一透射率約為27%，而雙層半調式材質層的第 二透射率約為6 %，但是如上述實施例，本發明修改的其In the present embodiment, the single-layer half-tone material layer 50 is, for example, one of (a) a molybdenum molybdenum (MoSi) layer and (b) a hafnium nitride molybdenum (MoSiN) layer. In addition, the double-layered half-tone material layer 55 in the embodiment includes, for example, (a) — a shi 锢 锢 氧化 氧化 氧化 氧化 氧化 氧化 Mo Mo Mo 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及One of the MoSiN-RuO) composite layers. In a variant embodiment, the single-layer semi-tone material layer 50 and/or the double-layer half-tone material layer 5 5 may also be composed of other materials as long as the enhanced critical dimension consistency and the reduced isolation area are obtained. One or more of the common window of the line width deviation from the dense area and the edge area to the dense area, the end of the line being shortened, and the enlarged window. As described in this embodiment, although the first transmittance of the single-layer half-tone material layer is about 27%, and the second transmittance of the double-layer half-tone material layer is about 6%, the present invention is modified as in the above embodiment. Its
9645twf.ptd 第13頁 1269934 * » 五、發明說明（ίο) 他組合以及/或是透射率之比率皆可被實施，且例如是只 要能獲得在前述句子中所提及之一或多個益處即可。 第6A圖至第6D圖係繪示孤立區至密集區之線寬偏差的 模擬數據，使用的圓環光源，光學條件為 NA/S: 0.64/0. 85/0. 55，光罩的間距（Pitch)為 0·32 微米， 線寬為0 . 1 6微米，光罩的X和Υ的大小為〇 · 1 6及0 · 6 4微米， 而光阻的目標線寬（Target DCD)為0.15微米。第6Α圖係繪 示當光罩1表現出的透射率為6 %時顯現的光阻輪廓的上視 圖，而第6B圖係繪示當光罩1於孤立區65表現出21%的透 射率以及於孤立區6 5兩側的密集線區域中表現出6 %的透 射率時顯現的光阻輪廓的上視圖。由圖中的數據可知，當 密集區線寬符合目標線寬大小時，6 0的光阻線寬為0 · 1 2 9 及0.552微米，而65的光阻線寬為0.152及0.586微米。所 以孤立區6 0的線寬係小於孤立區6 5的線寬。而且，孤立區 6 0與孤立區6 5相較之下，孤立區6 0中的線末端短縮的程度 較為嚴重。第6C圖的橫軸為孤立區的光罩透射率，縱軸為 密集區與孤立區線寬的差異，由圖可看出當孤立區的透射 率為2 1 %時差異為零。第6 D圖的橫轴為孤立區的光罩透射 率，縱軸為孤立區光罩線寬與光阻的差異（亦即線末端短 縮值），由圖可看出當孤立區的線末端短縮值隨光罩的透 射率變大而縮少。第6B圖與第6D圖中的光罩1顯示出利用 本發明之多階透射率光罩即可改善習知使用單透射率之光 罩所造成的線末端短縮、孤立區至密集區與邊緣區至密集 區之線寬偏差之問題。9645twf.ptd Page 13 1269934 * » V. Description of invention (ίο) The ratio of his combination and / or transmittance can be implemented, for example, as long as one or more of the benefits mentioned in the preceding sentence can be obtained Just fine. 6A to 6D are simulation data showing the line width deviation from the isolated area to the dense area, using the circular light source, the optical condition is NA/S: 0.64/0. 85/0. 55, the spacing of the mask (Pitch) is 0·32 μm, line width is 0.16 μm, the mask's X and Υ are 〇·16 and 0·6 4 μm, and the target line width of the photoresist (Target DCD) is 0.15 microns. Fig. 6 is a top view showing the photoresist profile which appears when the reticle 1 exhibits a transmittance of 6%, and Fig. 6B shows the reticle 1 exhibiting a transmittance of 21% in the isolated region 65. And a top view of the photoresist profile that appears when exhibiting a transmittance of 6% in a dense line region on either side of the isolated region 65. As can be seen from the data in the figure, when the line width of the dense area conforms to the target line width, the photoresist line width of 60 is 0 · 1 2 9 and 0.552 μm, and the photoresist line width of 65 is 0.152 and 0.586 μm. Therefore, the line width of the isolated area 60 is smaller than the line width of the isolated area 65. Moreover, in the isolated area 60 compared with the isolated area 65, the end of the line in the isolated area 60 is more severe. The horizontal axis of Fig. 6C is the transmittance of the reticle in the isolated area, and the vertical axis is the difference between the line width of the dense area and the isolated area. It can be seen from the figure that the difference is zero when the transmittance of the isolated area is 21%. The horizontal axis of Fig. 6D is the transmittance of the reticle in the isolated area, and the vertical axis is the difference between the line width of the reticle and the photoresist in the isolated area (ie, the end of the line is shortened), as can be seen from the end of the line in the isolated area. The shortening value decreases as the transmittance of the mask becomes larger. The reticle 1 in FIGS. 6B and 6D shows that the use of the multi-order transmittance reticle of the present invention can improve the shortening of the end of the line caused by the conventional illuminating mask, the isolated area to the dense area and the edge The problem of line width deviation from area to dense area.
9645twf.ptd 第14頁 1269934 五、發明說明（11) 臨界尺寸均勻性（C D U )係用以測定結構與結構間之臨 界尺寸一致的程度。第7A圖為第6ΑίΙ的剖面圖，第7B圖為 第6Β圖的剖面圖，第7Α圖及第7Β圖係分別繪示由僅有一透 射率為6%的光罩1所產生的光阻輪廓’以及在隔離區65有 透射率21%而在隔離區65兩側之密集區有透射率6%的光 罩1所產生的光阻輪廓，圖中上方黑白相間為光罩的示意 圖，圖中中間為光阻輪廓的剖面圖，圖中下方為光學強度 的示意圖，橫軸為距離單位為微米。隔離結構6 5的線寬係 與其相鄰之密集線的線寬相同。然而’隔離結構6 0的線寬 係小於與其相鄰之密集線的線寬。因此’利用多階透射率 光罩所形成的光阻輪廓與利用單透射率光罩所形成的光阻 輪廓相較之下，將顯露出較好臨界尺寸。 第8Α圖係描述光罩上的分佈，光罩的間距（pitch)為 0.32微米’線寬為〇·ΐ6微米，兩邊緣區的間距為微 米’此間距無法加入輔助圖形（A s s i s t f e a t u r e )。而光阻 的目標線寬（丁3^6七000)為0.16微米。第88圖係繪示邊 線光罩的透射率（密集區的光罩維持6%透射率）與邊緣光 阻線寬的關係’較高的透射率會增加邊緣線之臨界尺寸， 第8C圖係繪示邊緣線光罩的透射率（密集區的光罩維持“ 透射率）與邊緣光阻線寬和目標線寬的差異。較高的透射 率並縮小邊緣至密集區之線寬偏差。 ' 第9A圖為第8A圖的剖面圖’其中的邊緣線區與密集線 區皆具有6%之透射率的光罩，光罩的間距（pitch)g〇.32 微米’線寬為0 · 1 6微米，兩邊緣區的間距為〇 · 3 6微米，而9645twf.ptd Page 14 1269934 V. INSTRUCTIONS (11) Critical dimension uniformity (C D U ) is used to determine the extent to which the critical dimensions between structure and structure are consistent. 7A is a cross-sectional view of FIG. 6B, and FIG. 7B is a cross-sectional view of FIG. 6B. FIG. 7 and FIG. 7 are respectively diagrams showing a photoresist profile produced by the photomask 1 having only a transmittance of 6%. 'and the photoresist pattern produced by the reticle 1 having a transmittance of 21% in the isolation region 65 and having a transmittance of 6% in the dense region on both sides of the isolation region 65, in the figure, the upper black and white phase is a schematic view of the reticle, in the figure The middle is a cross-sectional view of the photoresist profile. The lower part of the figure is a schematic diagram of the optical intensity, and the horizontal axis is the distance unit of micrometers. The line width of the isolation structure 65 is the same as the line width of the adjacent dense line. However, the line width of the isolation structure 60 is smaller than the line width of the dense line adjacent thereto. Therefore, the photoresist profile formed by the multi-level transmittance mask will exhibit a better critical dimension than the photoresist profile formed by the single transmittance mask. Fig. 8 is a diagram showing the distribution on the reticle. The pitch of the reticle is 0.32 μm. The line width is 〇·ΐ6 μm, and the pitch of the two edge regions is micrometer ′. This pitch cannot be added to the auxiliary pattern (A s s i s t f e a t u r e ). The target line width of the photoresist (D 3^67,000) is 0.16 microns. Figure 88 shows the transmittance of the edge mask (the coverage of the dense mask maintains 6% transmittance) and the edge photoresist line width. 'High transmittance increases the critical dimension of the edge line. Figure 8C The transmittance of the edge line mask is shown (the mask of the dense area maintains the difference between the "transmittance") and the edge resist line width and the target line width. The higher transmittance reduces the line width deviation from the edge to the dense area. Figure 9A is a cross-sectional view of Figure 8A in which both the edge line region and the dense line region have a transmittance of 6%. The pitch of the mask is g〇.32 μm' line width is 0 · 1 6 microns, the spacing between the two edge regions is 〇 · 3 6 microns, and
9645twf.ptd 第 15 頁 1269934 五、發明說明（12) 光阻的目標線寬（Target DCD)為0.16·微米，由圖可之當密 集線區的光阻線寬為0. 1 6微米時，邊緣線區的線寬僅為0 · 129微米，線寬誤差為(K031微米。第9B圖為第8A圖的另一 剖面圖，其中邊緣線區2 7 %之透射率的光罩，而密集線區 皆具有6%之透射率的光罩，由圖可知當密集線區的光阻 線寬為0 . 1 6微米時，邊緣線區光阻線寬為0 . 1 5微米，線寬 誤差改善到為0 . 0 1微米。 第1 0 A圖至第1 0 C圖係繪示本發明之模擬數值，以說明 邊緣區至密集區之線寬偏差的明顯改善，其中使用的圓環 光源，光學條件為NA/S = 0. 6 4/ 0.8 5/ 0.5 5，光罩的間距 (Pi tch)為0· 32微米，線寬為0· 1 6微米，兩邊緣區的間距 為0 . 3 6微米，此間距無法加入輔助圖形（A s s i s t feature)。而光阻的目標線寬（Target DCD)為0·16微 米。。圖中的縱軸係表示進行曝光時所接收的輻射量，單 位為m j / c m 2，而橫軸則是表示失焦的總數（D e f 〇 c u s )， 單 位為微米。每一個圖皆描繪出中間結構以及邊緣線之結構 的曝光與失焦限度。此兩組結構相互重疊的區域呈現解析 中間結構與由邊緣線之結構的步進機最佳之設定狀況。在 每一個圖之重疊區中最大的矩形區域通常稱為共有窗。而 最大之共有窗通常是象徵微影製程中較佳的穩定度。 第10A圖係繪示使用透射率為6%之單透射率光罩的共 有窗。第1 0 B圖係繪示沿著光罩中之密集線區域的邊緣使 用18%的透射率，並同時在密集線區域内使用6%透射率 時，可將共有窗增大頗多，藉此在單一透射率光罩之使用9645twf.ptd Page 15 1269934 V. Description of the invention (12) The target line width of the photoresist (Target DCD) is 0.16 μm, which is shown by the figure when the line width of the dense line region is 0.16 μm. The line width of the edge line area is only 0 · 129 μm, and the line width error is (K031 μm. Fig. 9B is another cross-sectional view of Fig. 8A, in which the edge line area is 27% transmittance of the mask, and dense Each of the line regions has a transmittance of 6%. It can be seen from the figure that when the line width of the dense line region is 0.16 μm, the line width of the edge line region is 0.15 μm, and the line width error is Improved to 0. 1 1 micron. The 10th to 10th C drawings show the simulated values of the present invention to illustrate the significant improvement in the line width deviation from the edge region to the dense region, wherein the ring light source is used. The optical condition is NA/S = 0.64/0.8 5/0.5 5, the pitch of the mask (Pi tch) is 0·32 μm, the line width is 0·16 μm, and the spacing between the two edge regions is 0. 3 6 μm, this pitch cannot be added to the A ssist feature, and the target line width of the photoresist (Target DCD) is 0·16 μm. The vertical axis in the figure indicates exposure. The amount of radiation received is in mj / cm 2, while the horizontal axis represents the total number of out-of-focus (D ef 〇cus ), in microns. Each figure depicts the exposure of the intermediate structure and the structure of the edge line. The out-of-focus limit. The two overlapping areas of the two structures present the optimal setting of the intermediate structure and the stepper structure of the edge line. The largest rectangular area in the overlap area of each figure is commonly referred to as the shared window. The largest shared window is usually a symbol of better stability in the lithography process. Figure 10A shows a common window using a single transmittance mask with a transmittance of 6%. The 10B plot is shown along The edge of the dense line region in the mask uses 18% transmittance, and at the same time, when the 6% transmittance is used in the dense line region, the common window can be increased considerably, thereby using the single transmittance mask.
9645twf.ptd 第16頁 1269934 五、發明說明（13) 上的達成重大的改進。第10C圖係繪示當第10B圖之18%的 透射率變為21%的透射率時，共有窗有些許地增大。因 此，使用多階透射率之光罩與單一透射率之光罩相較之 下，係可明顯地擴大共有窗。 第Π A圖與第1 1 B圖係繪示本發明之另一實例中，多階 透射率光罩對線末端短縮之現象的作用。其中使用的圓環 光源，光學條件為NA/S = 0.6 4 / 0.8 5/ 0.5 5，光罩線寬為 0 . 1 6微米，兩線寬末端區的間距為〇 · 1 6微米，當兩條線的 末端彼此靠近時，相對於在每一處使用6%的透射率’於 此末端使用2 4 %的高透射率可明顯地減少線末端的短縮。 更進一步來說，第11B圖之第（a)圖為線末端光罩透射率 與兩線寬末端區的間距的關係圖，當透射率增加時能有效 減少線寬末端縮減的行為。第1 1 B圖之第（b )圖為線末端 光罩透射率和光罩與光阻尺吋的差異，當透射率增加時能 有效減少線寬光罩與光阻尺吋的差異，本實施例中當末端 光罩透射率為24%時，光罩與光阻尺吋的差異恰為零。 由於本發明在微影製程中只需要使用一個光罩與一曝 光步驟，可簡化微影製程。而且，相較於使用多個單一透 射率之光罩與多個曝光步驟的微影製程，本發明可獲得較 高之效率。因此，上述線末端短縮、臨界尺寸的一致性、 孤立區至密集區以及邊緣至密集區的線寬偏差問題，皆可 藉由本發明之光罩以單曝光步驟來降低其發生率，與以多 個單一透射率之光罩進行多次曝光步驟相同或較其為佳。 此外，亦可減少重疊的問題。9645twf.ptd Page 16 1269934 V. A significant improvement in the invention description (13). Fig. 10C shows that when the transmittance of 18% of the Fig. 10B becomes a transmittance of 21%, the common window is slightly increased. Therefore, the use of a multi-order transmittance reticle can significantly increase the common window compared to a single transmittance reticle. Fig. A and Fig. 1B show the effect of the multi-order transmittance mask on the phenomenon of the end of the line being shortened in another example of the present invention. The circular light source used therein has an optical condition of NA/S = 0.6 4 / 0.8 5/ 0.5 5 , and the line width of the mask is 0.16 μm. The distance between the end regions of the two lines is 〇·16 μm, when two When the ends of the strips are close to each other, the use of a transmittance of 6% at each end using a high transmittance of 24% at this end can significantly reduce the shortening of the end of the line. Furthermore, the (a)th image of Fig. 11B is a graph showing the relationship between the transmittance of the end-of-line mask and the pitch of the end portion of the two-line width, and the behavior of reducing the end of the line width can be effectively reduced when the transmittance is increased. Figure (1) of Figure 1 1 B shows the difference between the transmittance of the end of the line and the difference between the mask and the photoresist. When the transmittance increases, the difference between the line width mask and the photoresist ruler can be effectively reduced. In the example, when the end mask transmittance is 24%, the difference between the mask and the photoresist ruler is exactly zero. Since the present invention requires only one photomask and one exposure step in the lithography process, the lithography process can be simplified. Moreover, the present invention achieves higher efficiency than a lithography process using a plurality of single transmittance reticle and multiple exposure steps. Therefore, the above-mentioned line end shortening, critical dimension uniformity, isolated area to dense area, and edge-to-dense area line width deviation problem can be reduced by the single exposure step of the photomask of the present invention. A single transmittance reticle is preferably the same or better than the multiple exposure steps. In addition, the problem of overlap can also be reduced.
9645twf.ptd 第17頁 1269934 五、發明說明（14) 根據上述之說明，可使熟習此記憶者瞭解本發明之光 罩的製造方法，特別是多階透射率半調式相改變之光罩。 雖然本發明已以較佳實施例揭露如上’然其並非用以限定 本發明，任何熟習此技藝者，在不脫離本發明之精神和範 圍内，當可作些許之更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。9645twf.ptd Page 17 1269934 V. INSTRUCTION DESCRIPTION (14) According to the above description, the memory person skilled in the art can understand the manufacturing method of the reticle of the present invention, particularly the reticle with a multi-order transmittance half-tone phase change. Although the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
9645twf.ptd 第18頁 1269934 > · 圖式簡單說明 第1圖是繪示第一光罩與第二光罩之上視圖，其中繪 示出之圖案顯現出孤立區至密集區以及邊緣區至密集區之 線寬偏差。 第2圖是繪示依照本發明之第一實施例中，具有對應 於第1圖圖案之圖案的光罩之剖面示意圖。 第3圖是繪示依照本發明之第二實施例中，具有對應 於第1圖圖案之圖案的光罩之剖面示意圖。 第4圖是繪示依照本發明之第三實施例中，具有對應 於第1圖圖案之圖案的光罩之剖面示意圖。 第5圖是繪示依照本發明之第四實施例中，具有對應 於第1圖圖案之圖案的光罩之剖面示意圖。 第6A圖至第6D圖是繪示利用單透射率光罩所產生的孤 立區至密集區之線寬偏差，相對於利用本發明之多階透射 率半調式相位移光罩所產生的孤立區至密集區之線寬偏差 的比較圖。 第7A圖與第7B圖是繪示使用單一透射率光罩所形成之 臨界尺寸與使用多階透射率光罩所形成之臨界尺寸的比較 圖。 第8A圖是繪示邊緣線之臨界尺寸以及不同透射率之多 階透射率半調式相位移光罩的邊緣區至密集區之線寬變 化。 第8 B圖係繪示邊緣線光罩的透射率（密集區的光罩維 持6 %透射率）與邊緣光阻線寬的關係。 第8 C圖係繪示邊緣線光罩的透射率（密集區的光罩維9645twf.ptd Page 18 1269934 > · BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a top view of the first reticle and the second reticle, wherein the pattern is shown to show the isolated area to the dense area and the edge area to The line width deviation of the dense area. Fig. 2 is a schematic cross-sectional view showing a photomask having a pattern corresponding to the pattern of Fig. 1 in the first embodiment of the present invention. Figure 3 is a cross-sectional view showing a photomask having a pattern corresponding to the pattern of Figure 1 in accordance with a second embodiment of the present invention. Fig. 4 is a cross-sectional view showing a photomask having a pattern corresponding to the pattern of Fig. 1 in a third embodiment of the present invention. Fig. 5 is a cross-sectional view showing a photomask having a pattern corresponding to the pattern of Fig. 1 in a fourth embodiment of the present invention. 6A to 6D are diagrams showing the line width deviation of the isolated region to the dense region generated by the single transmittance mask, with respect to the isolated region produced by the multi-order transmittance half-tone phase shift mask using the present invention. A comparison chart of line width deviations to dense areas. Figures 7A and 7B are graphs showing the comparison of the critical dimension formed using a single transmittance mask with the critical dimension formed using a multi-level transmittance mask. Fig. 8A is a graph showing the critical dimension of the edge line and the line width variation of the edge region to the dense region of the multi-step transmittance half-shift phase shift mask of different transmittances. Figure 8B shows the relationship between the transmittance of the edge line mask (the visor in the dense area maintains 6% transmittance) and the line width of the edge photoresist. Figure 8C shows the transmittance of the edge line mask (the mask dimension of the dense area)
9645twf.ptd 第19頁 1269934 圖式簡單說明 持6 %透射率）與邊緣光阻線寬和目標線寬的差異。 第9A圖與第9B圖是分別繪示用單一透射率之光罩與多 階透射率半調式相位移光罩下所形成的臨界尺寸之剖面 圖。 第10A圖至第10C圖是繪示利用單透射率光罩所產生的 共有窗，相對於利用本發明之多階透射率半調式相位移光 罩所產生的共有窗之比較圖。 第1 1 A圖與第11 B圖是繪示在相鄰的線間變化的透射率 對於線末端短縮現象的作用。 【圖式標示說明】 1 0 :中間結構 2 0 :第一圖案 25 :第二圖案 30 :單層半調式材質層 35 :雙層半調式材質層 40 :相位移180度之半調式材質 45 :相位移180度之半調式材質的第二厚度 50 :相位移為180度之單層半調式材質層 55 :相位移為180度之雙層半調式材質層 6 0、6 5 :孤立區 9645twf.ptd 第20頁9645twf.ptd Page 19 1269934 Schematic description of the difference 6% transmittance) and edge resistance line width and target line width difference. Figures 9A and 9B are cross-sectional views showing critical dimensions formed by a single transmittance reticle and a multi-order transmittance half-tone phase shift mask, respectively. Figures 10A through 10C are graphs showing the comparison of the common window produced by the single-transmittance reticle with respect to the common window produced by the multi-order transmittance half-tone phase shift illuminator of the present invention. Figures 1 A and 11 B illustrate the effect of varying transmittance between adjacent lines on the end of the line. [Illustration description] 1 0 : Intermediate structure 2 0 : First pattern 25 : Second pattern 30 : Single layer semi-tone material layer 35 : Double half-tone material layer 40 : Half-tone material with phase displacement of 180 degrees 45 : The second thickness of the half-tone material with a phase shift of 180 degrees is 50: a single-layer half-tone material layer with a phase shift of 180 degrees: a double-layered half-tone material layer with a phase shift of 180 degrees. 6 0, 6 5: isolated region 9645 twf. Ptd page 20
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| TWI613509B (en) * | 2013-04-17 | 2018-02-01 | 阿爾貝克成膜股份有限公司 | Manufacturing method of phase shift mask, phase shift mask, and manufacturing device of phase shift mask |
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| TWI613509B (en) * | 2013-04-17 | 2018-02-01 | 阿爾貝克成膜股份有限公司 | Manufacturing method of phase shift mask, phase shift mask, and manufacturing device of phase shift mask |
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