1268003 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種發光二極體之製造方法，更進一步 地，本發明係關於一種利用可剝離之雙面薄膜進行晶片貼 合之方法。 【先前技術】 發光二極體為目前受矚目的光電元件之一，其具有 壽命長、省電、體積小、驅動電壓低、反應速度快、耐 震及辨識能力高等優點。為提高產品效能並降低製造成 本，學術界及產業界莫不投入大量資源積極從事製程及 材料的研究開發。 習知製造發光二極體（LED)的方法，主要係於砷化 鎵（GaAs)、藍寶石（sapphire)、碳化石夕（SiC)等材質 之基板上磊晶形成一PN介面之LED磊晶層，將此磊晶膜 以晶片貼合技術（Wafer bonding)貼合至透光基板或具金 屬鏡面之永久基板。透過晶片貼合可提高LED之光取出效 率（去除吸光基板）與導電性、散熱性。傳統晶片貼合的 方法有直接貼合與透過介質貼合，介質的種類包含有機 材料、金屬或金屬/有機複合材料混合溶液。 然而不管直接或透過介質貼合方法，均需要加熱加 壓，且貼合的品質受加熱之溫度與壓力影響，容易造成 磊晶薄膜破裂的破裂或者黏接不完全的現象，導致降低 良率所造成的成本提高。 有鑑於此，本發明嘗試開發發光二極體的製程，簡 5 1268003 化目前LED之製程步驟，並降低製造成本、解決以往 元件散熱不佳的缺點，以其提供高亮度LED元件。 【發明内容】 為解決習知技術的缺失，本發明之目的在提供一種發 光二極體之製造方法，以期解決傳統晶片貼合過程中因加 熱加壓導致磊晶破裂之缺失，提高產品良率以降低所需成 本0 為達上述目的，本發明之發光二極體製作方法，其步 驟包含：（a)提供一磊晶用基板及於該磊晶用基板上成長之 LED磊晶層，該LED磊晶層於該磊晶用基板上依序包括第 二披覆層、活性發光層、第一披覆層，其中前述第二披覆 層上具有一第一電極；（b)於前述磊晶層之電極貼附一暫時 基板，該暫時基板係利用一雙面具黏著性之可剝離薄膜將 前述暫時基板與遙晶層貼附，（c)移除前述遙晶用基板，（d) 形成一金屬反射層於前述第一彼覆層上；（e)形成一第二電 極層於前述反射層上；（f)形成一永久基板於前述第二電極 層上；及(g)移除前述可剝離膜及暫時基板。 在較佳的實施態樣中，本發明所使用之雙面具黏著性 之可剝離薄膜係為雙面具黏著性之耐酸鹼膠帶。 本發明以耐酸鹼膠帶取代傳統環氧樹脂或蠟進行晶 片貼合之步驟，不需熱壓處理即可使暫時基板與磊晶在 不傷害磊晶的條件下緊密結合，且可在後續製程步驟後 將暫時基板輕易地與磊晶分離，簡化製程步驟，藉由提 高良率降低成本。 6 1268003 【實施方式】 本發明之發光二極體製作方法其具體操作流程示意圖 係如第一A圖至第一G圖所示，現詳述如下，首先參第一a 圖所不’提供一蠢晶用基板20及於該蠢晶用基板20上長成 之LED磊晶層10，該LED磊晶層1〇於該磊晶用基板20上依 序包括第一彼覆層3、活性發光層2及第二彼覆層1，其中 前述第二披覆層1上具有一第一電極30。 磊晶用基板20之材質係為本發明領域熟知該項技藝者 所知悉，其係包含，但不限於神化鎵、藍寶石、碳化石夕或 磷化銦。 蠢晶層10之材質包含GaxAlyInixyN 、 (AlxGarJylnryP、InxGa^xAs、ZnSxSepx，其中 〇gxgl，Q ‘y‘l，本發明之實施例係使用InxGaixN (〇$x$i)。 在蟲晶層10之第二彼覆層i與第一電極3〇間係可進一 步包含一透明導電膜，藉以提高電流之均勻度，避免二極 體發光產生中央亮度較低之問題。 接著參第一 B圖所示，將磊晶層1〇之第一電極3〇侧貼 附一暫，基板50,該暫時基板50係利用一雙面具黏著性之 可剝離薄膜4〇將前述暫時基板5喚1晶層麵附。本發明 之可剝離薄膜40可為由高分子聚合物（例如ρι、PMMA)所 形成之雙^(具黏著性之魏驗膠帶。本發明所稱之暫時基 板50之材質包含玻璃、石夕、藍寶石及高分子等本發明技術 領域所知悉之耐祕基板，在本發日狀實_巾係使用玻 7 1268003 參第一c圖，完成磊晶層10與暫時基板5〇之貼合後， 接著移除蠢晶用基板20，移除之方法包含，但不限於姓刻 法或雷射剝離法，本發明之磊晶用基板2〇之材料係為藍寶 石，其係可利用準分子雷射使其與磊晶層1〇剝離。磊晶層 10之第一披覆層3與磊晶用基板2〇間係可進一步包含一改 善蠢晶品質之緩衝層，當遙晶層1 〇包含緩衝層時，移除遙 晶用基板20後需進一步移除緩衝層，移除緩衝層之方法包 含利用ICP、RIE或者化學方法，化學方法有許多可採行之 技術，包括，但不限於光輔助化學蝕刻法或強腐蝕性溶液 蝕刻方式。 參第一D圖及第一E圖，完成前述移除磊晶用基板2〇後 (或進一步移除緩衝層後），即將一反射層60形成於前述 第一彼覆層3上，之後再形成一第二電極層70於前述反射 層60上，反射層60係可為金屬，其材質包含Ag、Pt、Pd、 Au、Ag/Cr、Ag/Ti、Ag/Ni、Au/Zu、Au/Be、Au/Ge、 Au/Ge/Ni、In、Sn、A1、Zn、Ge、Ni、Fe、Cu、Cu/W、 W或其混合物，反射層60亦可由金屬/非金屬層構成並且由 非金屬層與第一彼覆層3接觸。一般而言，非金屬層係具 有高折射率、高導電率、高附著力與阻擋金屬擴散至第一 彼覆層3之功能，本發明之金屬/非金屬層之材質係包含 Ag/TaN、Ag/TiN、Ag/Ni-P、Ag/Ni-P-W、Ag/Ni/ITO、 Ni/TaN、Ni/TiN、Ni/Ni-P、Ni/Ni-P-W、Ni/ITO、 Au/TaN、Au/TiN、Au/Ni-P、Au/Ni-P-W、Cu/TaN、 Cu/TiN、Cu/Ni-P、Cu/Ni-P-W或其混合物，反射層60與第 二電極層70之形成方法包含，但不限於蒸鍍法、濺鍍法、 1268003 離子鍍法、電鍍法或無電鍍法，在本發明之實施例中，反 射層60係為銀，反射層60與第二電極層70係利用蒸鑛法形 成’第二電極層係可為本技術領域熟知該項技藝者所知乘 之金屬材料，包含，但不限於Cr/Pt/Au、Ti/Al/Ti/Au等^ 與主要蠢晶層10材料形成歐姆接觸（Ohmic contact)之金屬 或其合金。 。 斤參第一F圖至第一G圖，接著形成一永久性基板8〇於前 述第二電極層70上，永久性基板8〇之材質包含，但不限於 銅、鎳、錮、鐵、鎢或其混合物等具有高導電性或導熱性 佳之材料，其形成之方法句冬 ，彳Θ 丁服认垂》ώ： i 1 ,BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a light-emitting diode, and more particularly to a method of wafer bonding using a peelable double-sided film. [Prior Art] The light-emitting diode is one of the currently attracting photovoltaic elements, and has the advantages of long life, power saving, small volume, low driving voltage, fast reaction speed, high shock resistance and high recognition ability. In order to improve product efficiency and reduce manufacturing costs, academics and industry do not invest a lot of resources in the research and development of processes and materials. A method for manufacturing a light-emitting diode (LED) is mainly performed by epitaxially forming a PN interface LED epitaxial layer on a substrate made of gallium arsenide (GaAs), sapphire, or SiC. The epitaxial film is bonded to a light-transmissive substrate or a permanent substrate having a metal mirror surface by Wafer bonding. Through the wafer bonding, the light extraction efficiency of the LED (removing the light-absorbing substrate), conductivity, and heat dissipation can be improved. Conventional wafer bonding methods include direct bonding and dielectric bonding, and the types of media include organic materials, metal or metal/organic composite materials. However, heating or pressurization is required regardless of the direct or through the dielectric bonding method, and the quality of the bonding is affected by the temperature and pressure of heating, which may easily cause cracking or incomplete bonding of the epitaxial film, resulting in a decrease in yield. The resulting cost increases. In view of this, the present invention attempts to develop a process for a light-emitting diode, and the process of the current LED is reduced, and the manufacturing cost is reduced, and the disadvantages of poor heat dissipation of the conventional components are solved, thereby providing a high-brightness LED element. SUMMARY OF THE INVENTION In order to solve the defects of the prior art, the object of the present invention is to provide a method for manufacturing a light-emitting diode, in order to solve the problem of the epitaxial rupture caused by heating and pressurization in the conventional wafer bonding process, and improve the product yield. In order to achieve the above-mentioned object, the method for fabricating a light-emitting diode of the present invention comprises the steps of: (a) providing an epitaxial substrate and an LED epitaxial layer grown on the epitaxial substrate; The LED epitaxial layer sequentially includes a second cladding layer, an active light emitting layer, and a first cladding layer on the epitaxial substrate, wherein the second cladding layer has a first electrode; (b) the foregoing The electrode of the crystal layer is attached with a temporary substrate which is attached to the temporary substrate and the crystal layer by a pair of mask adhesive peelable film, (c) removing the substrate for the crystal lens, (d) Forming a metal reflective layer on the first first cladding layer; (e) forming a second electrode layer on the reflective layer; (f) forming a permanent substrate on the second electrode layer; and (g) removing The peelable film and the temporary substrate. In a preferred embodiment, the double mask adhesive release film used in the present invention is a double mask adhesive acid and alkali resistant tape. The invention replaces the traditional epoxy resin or wax with the acid-resistant adhesive tape for the step of wafer bonding, and the temporary substrate and the epitaxial crystal can be tightly combined without damage to the epitaxial crystal without hot pressing treatment, and can be processed in the subsequent process. After the step, the temporary substrate is easily separated from the epitaxial crystal, which simplifies the process steps and reduces the cost by increasing the yield. 6 1268003 [Embodiment] The specific operation flow diagram of the method for fabricating the light-emitting diode of the present invention is as shown in the first A to the first G, and is described in detail below. First, the first a map is not provided. a substrate 20 for a stray crystal and an LED epitaxial layer 10 grown on the substrate 20 for the dormant crystal, the LED epitaxial layer 1 including the first overlying layer 3 and the active luminescence sequentially on the epitaxial substrate 20 The layer 2 and the second cladding layer 1 have a first electrode 30 on the second cladding layer 1. The material of the epitaxial substrate 20 is known to those skilled in the art and includes, but is not limited to, deuterated gallium, sapphire, carbon carbide or indium phosphide. The material of the stray layer 10 includes GaxAlyInixyN, (AlxGarJylnryP, InxGa^xAs, ZnSxSepx, wherein 〇gxgl, Q 'y'l, and embodiments of the present invention use InxGaixN (〇$x$i). The second interlayer i and the first electrode 3 may further comprise a transparent conductive film, thereby improving the uniformity of the current and avoiding the problem that the central luminance of the diode is low, which is shown in FIG. Attaching a first substrate 3 to the side of the first electrode 3 of the epitaxial layer, the substrate 50 is attached to the temporary substrate 5 by using a double-mask adhesive peelable film 4 The peelable film 40 of the present invention may be a double-formed adhesive tape formed of a high molecular polymer (for example, ρι, PMMA). The material of the temporary substrate 50 referred to in the present invention includes glass and stone eve. The sapphire and the polymer, which are known in the technical field of the present invention, are used in the present invention, and the glass substrate 7 1268003 is used in the first c diagram to complete the bonding between the epitaxial layer 10 and the temporary substrate 5 , then remove the substrate 20 for the stupid crystal, the method of removing includes, but not In the method of surname or laser stripping, the material of the substrate for epitaxial substrate 2 of the present invention is sapphire, which can be separated from the epitaxial layer by using an excimer laser. The first layer of the epitaxial layer 10 The coating layer 3 and the epitaxial substrate 2 may further comprise a buffer layer for improving the quality of the stray crystal. When the crystal layer 1 includes the buffer layer, the buffer layer is further removed after removing the crystal substrate 20 The method of removing the buffer layer includes using ICP, RIE or chemical methods, and the chemical method has many techniques that can be adopted, including, but not limited to, photo-assisted chemical etching or strong corrosive solution etching. In the first E diagram, after the removal of the epitaxial substrate 2 is completed (or after the buffer layer is further removed), a reflective layer 60 is formed on the first cladding layer 3, and then a second electrode layer is formed. The reflective layer 60 may be a metal, and the material thereof comprises Ag, Pt, Pd, Au, Ag/Cr, Ag/Ti, Ag/Ni, Au/Zu, Au/Be, Au/Ge. , Au/Ge/Ni, In, Sn, A1, Zn, Ge, Ni, Fe, Cu, Cu/W, W or a mixture thereof, the reflective layer 60 may also be made of gold a non-metal layer and a non-metal layer in contact with the first cladding layer 3. In general, the non-metal layer has a high refractive index, a high electrical conductivity, a high adhesion, and a diffusion of the barrier metal to the first cladding layer 3 The function of the metal/nonmetal layer of the present invention comprises Ag/TaN, Ag/TiN, Ag/Ni-P, Ag/Ni-PW, Ag/Ni/ITO, Ni/TaN, Ni/TiN, Ni. /Ni-P, Ni/Ni-PW, Ni/ITO, Au/TaN, Au/TiN, Au/Ni-P, Au/Ni-PW, Cu/TaN, Cu/TiN, Cu/Ni-P, Cu /Ni-PW or a mixture thereof, the method of forming the reflective layer 60 and the second electrode layer 70 includes, but is not limited to, vapor deposition, sputtering, 1268003 ion plating, electroplating, or electroless plating, in the practice of the present invention In the example, the reflective layer 60 is silver, and the reflective layer 60 and the second electrode layer 70 are formed by a vapor deposition method. The second electrode layer can be a metal material known to those skilled in the art, including, However, it is not limited to Cr/Pt/Au, Ti/Al/Ti/Au, etc., a metal or an alloy thereof which forms an ohmic contact with the material of the main dope layer 10. . The first F to the first G map of the ginseng, and then a permanent substrate 8 is formed on the second electrode layer 70. The material of the permanent substrate 8 includes, but is not limited to, copper, nickel, ruthenium, iron, tungsten. Or a mixture of materials having high conductivity or thermal conductivity, etc., the method of forming the same sentence, 彳Θ 服 认 认 ώ ώ: i 1 ,
狀wf吁基扳50,即可製成一發光二極體1〇()。 ,本發明之發光二極體之製作方法係透過設備與機 ^控’於單次製程中於單_晶圓上形成複數 ，=先二極體製造方法係可進一步包含一切割晶= 步驟’切割之方法與器械係如本領域所熟知之技 U匕舌，但不限於鑽石刀切割或雷射切割術。 步了解本發明之優點，並非 以下實施態樣係用於進—步 用於限制本發明之申請專利範圍 也例1·利用本發明之方法製造I化A light-emitting diode 1 〇 () can be formed by the shape of the wf. The method for fabricating the light-emitting diode of the present invention is to form a complex number on a single wafer by a device and a device in a single process, and the first diode manufacturing method may further comprise a cutting crystal = step ' The method and apparatus for cutting are as known in the art, but are not limited to diamond knife cutting or laser cutting. In order to understand the advantages of the present invention, the following embodiments are not used to further limit the scope of the patent application of the present invention.
1268003 ^ 分子雷射將藍寶石基板剝離。 - 完成藍寶石基板之剝離後，可利用ICP將緩衝層移 除，之後再於第一彼覆層上以蒸鍍法形成一以銀為材&之 反射層，接著在於銀上形成金屬電極層，金屬電極層係可 為本技術領域熟知該項技藝者所知悉之金屬材料，包含， 但不限於Cr/Pt/Au、Ti/Al/Ti/Au等可與主要磊晶層i 〇材料 形成歐姆接觸（Ohmic contact)之金屬或其合金。接著在電 極層上形成一永久性基板，在剝除膠帶與暫時基板之後， ❿ 可進一步將aa圓切副為晶粒，即完成氮化録發光二極體之 製造。 綜合上述，本發明可解決傳統LED因製程導致的散熱 不佳，以及亮度、壽命、穩定性等無法突破之瓶頸，由於 目前LED金屬基板切割技術僅能切2〇〇um以下之金屬，而 • 藉由本發明之雙面黏著之耐酸鹼膠帶的使用，將可解決以 往使用電鑛或然電鑛製作之金屬基板，其金屬基板厚度最 少需要大於30〇um以上才能保護LED磊晶層在晶粒製作過 參程中完整不破裂，卻也因此無法使用金屬基板切割技術的 缺點’，本發明既可保護LED磊晶層在晶粒製作過程中完整 不破裂’且金屬基板厚度亦可降至2〇〇um以下，由於暫時 性基板厚度加金屬基板厚度已經超過3〇〇um以上，故可保 4 LED蟲晶層不破裂，順利切割金屬基板與lEd磊晶層， 達到製程步驟之簡化與製程時間的縮短，進一步降低成 本。由於本巧程解決散熱問題，故亮度不會飽和，在輸出 功率上可持績大幅增加而不會縮短壽命 。更進一步地，本 發明所製作的發光二極體係為垂直式電極結構，因此可增 1268003 使LED產品在靜電存在的 加發光面積，增進抗靜電Λ,力， 環境下也可操作。 月匕 其他實施熊描 相等或相似 =二卜一本說明書所揭露的特徵僅是:等或:似 和範圍内，當可作各種之更動與潤飾不脫離本發明之精神 1268003 【圖式簡單說明】 第一 A圖係為具有蟲晶層之蟲晶用基板不意圖。 第一 B圖係為利用可剝離膜將暫時基板與磊晶用基板 結合不意圖。 %一 C圖係為移除蠢晶用基板不意圖。 第一 D圖係為形成反射層示意圖。 第一E圖係為形成金屬導電層示意圖。 第一F圖係為形成永久基板示意圖。 第一 G圖係為移除可剝離膜及暫時基板製程發光二極 體結構示意圖。 [主要元件符號說明] 1 第二彼覆層 2 活性發光層 3 第一彼覆層 10 蟲晶層 20 蠢晶用基板 30 第一電極 40 雙面具黏性之可剝離膜 50 暫時基板 60 反射層 70 金屬導電層 80 永久基板 121268003 ^ Molecular laser stripping the sapphire substrate. - After the sapphire substrate is peeled off, the buffer layer can be removed by ICP, and then a silver-based reflective layer is formed by vapor deposition on the first cladding layer, followed by formation of a metal electrode layer on the silver. The metal electrode layer can be a metal material known to those skilled in the art, including, but not limited to, Cr/Pt/Au, Ti/Al/Ti/Au, etc., which can be formed with the main epitaxial layer. Ohmic contact metal or alloy thereof. Then, a permanent substrate is formed on the electrode layer. After the tape and the temporary substrate are stripped, the aa circle can be further cut into a crystal grain, that is, the fabrication of the nitrided light-emitting diode is completed. In summary, the present invention can solve the problem that the conventional LED is not well-dissipated due to the process, and the bottleneck of brightness, life, stability, etc., because the current LED metal substrate cutting technology can only cut metal below 2 um, and By using the double-sided adhesive acid and alkali resistant tape of the present invention, the metal substrate prepared by using the electric ore or the electric ore in the past can be solved, and the thickness of the metal substrate needs to be at least 30 um or more to protect the LED epitaxial layer in the crystal. The granules are completely ruptured in the process, but the defects of the metal substrate cutting technology cannot be used. The invention can protect the LED epitaxial layer from being completely broken during the grain making process, and the thickness of the metal substrate can also be reduced. Below 2〇〇um, since the thickness of the temporary substrate plus the thickness of the metal substrate has exceeded 3〇〇um or more, it is possible to ensure that the 4 LED worm layer is not broken, and the metal substrate and the lEd epitaxial layer are smoothly cut, thereby simplifying the process steps. The process time is shortened to further reduce costs. Since this technology solves the heat dissipation problem, the brightness is not saturated, and the output power can be greatly increased without shortening the life. Furthermore, the light-emitting diode system produced by the invention has a vertical electrode structure, so that it can increase the number of light-emitting areas of the LED product in the presence of static electricity, and can also be operated under the environment. Other implementations of the Lunar New Year bears are equal or similar = 2 Bu. The features disclosed in this specification are only: equal or: within the scope and scope, when various changes and retouchings can be made without departing from the spirit of the present invention 126803 [Simplified illustration The first A diagram is not intended to be a substrate for insect crystals having a worm layer. The first B diagram is not intended to use a peelable film to bond a temporary substrate to an epitaxial substrate. The %-C diagram is not intended to remove the substrate for the stray crystal. The first D diagram is a schematic diagram of forming a reflective layer. The first E diagram is a schematic diagram of forming a metal conductive layer. The first F diagram is a schematic diagram of forming a permanent substrate. The first G diagram is a schematic diagram of the structure of the light-emitting diode removed from the peelable film and the temporary substrate process. [Main component symbol description] 1 Second cover layer 2 Active light-emitting layer 3 First cover layer 10 Crystal layer 20 Substrate substrate 30 First electrode 40 Double-mask adhesive film 50 Temporary substrate 60 Reflection Layer 70 metal conductive layer 80 permanent substrate 12