TWI265981B - Multi-step release method for electrochemically fabricated structures - Google Patents

Abstract

Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.

Description

1265981 玖、發明說明： 【明戶斤屬^^ "々貝】 相關申請案 本案要請求2003年5月7日申請之No.l0/434497及2003 5 年6月27曰申請之No.10/607931等美國專利申請案的優先 權。該二申請案的内容併此附送。 發明領域 本發明概有關於電化學製造的領域，及藉逐層構建沈 積材料來製造3D結構的技術。尤係有關埋設於犧牲材料中 10 之微結構的製造，及藉二或更多個不同的蝕刻操作由該犧 牲材料中釋出該等微結構的技術。 L先前技術2 發明背景 一種由多數黏接層來製成三維結構(例如部件、構件、 15 裝置等等）的技術曾被Adam L· Cohen所發明，而被稱為電 化學製造。其正由 California，Burbank·的 Microfabrica™ 公司 (前為MEMGeii^公司）以EFAB⑰之名稱來商業化實施。此技 術曾揭露於2000年2月22日所頒發的No.6027630美國專利 中。該電化學沈積技術能利用獨特的罩覆技術來選擇性地 20 沈積材料，其包括使用一罩體，該罩體含有可攙變順形的 材料設在一支撐結構上，該支撐結構係獨立於要被鍍佈的 基材。當欲使用該罩體來進行電沈積時，該罩體之可順利 部份會在有電鍍溶液的情況下與一基材接觸，而該接觸會 抑制所擇部位的沈積。為方便起見，該等罩體乃被概稱為 1265981 可順形接觸罩，而該罩鍍技術則概稱為可順形接觸罩鍍佈 法。尤其是，基於California，Burbank的Microfabrica™公司 (前為MEMGei^公司）之名，故該罩體已被習稱為INSTANT MASKS TM而該製法則習稱為INSTANT MASKING或 5 INSTANT MASK™鍍佈法。利用可順形接觸罩鐘佈法之選 擇性沈積能夠用來製造單一材料層或多層結構。該 No.6027630美國專利的内容併此提供參考。由於本申請案 係有關於上述專利案，故將各種已公開之有關可順形接觸 罩鑛佈法（即INSTANT MAS KING)與電化學製造的資料開 10 列如下： (1) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis 及P. Will等人之 “EFAB : Batch production of functional， fully-dense metal parts with micro-scale features，，，Proc. 9th Solid Freeform Fabrication，The University of Texas at 15 Austin，pl61，Aug· 1998 o (2) A· Cohen，G· Zhang，F. Tseng，F. Mansfeld，U· Frodis 及 P. Will 等人之 “EFAB : Rapid，Low-Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMs’’， Proc. 12th IEEE Micro Electro Mechanical Systems 20 Workshop，IEEE，p244, Jan. 1999。 (3) Α· Cohen之“3-D Micromachining by Electrochemical Fabrication”，Micromachine Devices，March 1999。 (4) G· Zhang，A· Cohen，U. Frodis，F· Tseng，F. Mansfeld， 及P· Will，等人之“EFAB : Rapid Desktop Manufacturing of 12659811265981 玖, invention description: 【明户斤属^^ "々贝】 Related applications This case is required to apply for No. l0/434497 on May 7, 2003 and No. 10 on June 27, 2003 Priority to U.S. Patent Application Serial No./607,931. The contents of the two applications are attached herewith. FIELD OF THE INVENTION The present invention relates generally to the field of electrochemical fabrication and to techniques for fabricating 3D structures by layer-by-layer construction of deposited materials. In particular, the fabrication of microstructures embedded in a sacrificial material 10 and the technique of releasing such microstructures from the sacrificial material by two or more different etching operations. L. Prior Art 2 Background of the Invention A technique for forming a three-dimensional structure (e.g., components, members, 15 devices, etc.) from a plurality of adhesive layers has been invented by Adam L. Cohen and is called electrochemical fabrication. It is being commercialized by California, Burbank· MicrofabricaTM (formerly MEMGeii^) under the name EFAB17. This technique was disclosed in U.S. Patent No. 6,027,630 issued Feb. 22, 2000. The electrochemical deposition technique utilizes a unique overlay technique to selectively deposit material 20, including the use of a cover having a morphable material disposed on a support structure that is independent For the substrate to be plated. When the cover is to be used for electrodeposition, a smooth portion of the cover may be in contact with a substrate in the presence of a plating solution which inhibits deposition of the selected portion. For convenience, the covers are generally referred to as 1265981 compliant contact covers, and the hood plating technique is referred to as a conformable contact hood plating process. In particular, based on California, Burbank's MicrofabricaTM (formerly MEMGei^ company), the cover has been known as INSTANT MASKSTM and the process is known as INSTANT MASKING or 5 INSTANT MASKTM plating. . The selective deposition using a conformable contact hood clock can be used to fabricate a single material layer or a multilayer structure. The contents of U.S. Patent No. 6,027,630, the disclosure of which is incorporated herein by reference. Since this application is related to the above patents, the various published materials relating to the conformal contact hood method (ie INSTANT MAS KING) and electrochemical fabrication are listed as follows: (1) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will et al. "EFAB: Batch production of functional, fully-dense metal parts with micro-scale features,,, Proc. 9th Solid Freeform Fabrication, The University of Texas at 15 Austin, pl61, Aug· 1998 o (2) A· Cohen, G· Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will et al. “EFAB: Rapid, Low- Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMs'', Proc. 12th IEEE Micro Electro Mechanical Systems 20 Workshop, IEEE, p244, Jan. 1999. (3) 3-· Cohen's "3-D Micromachining by Electrochemical Fabrication", Micromachine Devices, March 1999. (4) G· Zhang, A· Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P. Will, et al. “EFAB: Rapid Desktop Manufacturing of 1265981

True 3-D Microstructures”， Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications，The Aerospace Co·，Apr. 1999 oTrue 3-D Microstructures”, Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications, The Aerospace Co., Apr. 1999 o

(5) F. Tseng，U. Frodis，G. Zhang，A. Cohen，F. Mansfeld， 5 及P· Will等人之“EFAB ·· High Aspect Ratio, Arbitrary 3-D(5) F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, 5 and P. Will et al. EFAB · High Aspect Ratio, Arbitrary 3-D

Metal Microstructures using a Low-Cost Automated Batch Process’’，3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST’99)，June 1999 o (6) A. Cohen，U. Frodis，F. Tseng, G. Zhang，F· Mansfeld， 10 及 R Will 等人之 “EFAB ·· Low-Cost, AutomatedMetal Microstructures using a Low-Cost Automated Batch Process'', 3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST'99), June 1999 o (6) A. Cohen, U. Frodis, F. Tseng, G. Zhang, F· Mansfeld, 10 and R Will et al. “EFAB · Low-Cost, Automated

Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures’’， Micromaching and Microfabrication Process Technology， SPIE 1999 Symposium on Micromaching and Microfabrication，September 1999 o 15 (7)F. Tseng，G. Zhang，U. Frodis，A· Cohen，F. Mansfeld， 及P. Will等人之“EFAB : High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process”，MEMS Symposium，ASME 1999 International Mechanical Engineering Congress and Exposition，November， 20 1999。 (8) A. Cohen，“Electrochemical Fabrication (EFABTM)”， Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EL-Hak，CRC Press，2002。 (9) “Microfabrication-Rapid Prototyping’s Killer Application”， 1265981Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures'', Micromaching and Microfabrication Process Technology, SPIE 1999 Symposium on Micromaching and Microfabrication, September 1999 o 15 (7) F. Tseng, G. Zhang, U. Frodis, A· Cohen, F Mansfeld, and P. Will et al., "EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process", MEMS Symposium, ASME 1999 International Mechanical Engineering Congress and Exposition, November, 20 1999. (8) A. Cohen, "Electrochemical Fabrication (EFABTM)", Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EL-Hak, CRC Press, 2002. (9) "Microfabrication-Rapid Prototyping’s Killer Application", 1265981

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Publishing, Inc·，June 1999 o 以上九種公開資料的内容併此附送提供參考。 该電化學沈積法係能以多如上述專利及公開資料中所 <的方式來’Ί在—種方式巾，該製法在形成所要製造 之結構的各層時會進行三個分開的操作： !.藉包沈積來選擇性地沈積至少_材料於—基材的一 或多個所需區域上。 ^ •…、^猎電沈積來覆面沈積至少一添加材料，而使 1〇 該添加材料覆莫杰< 二 ^則己被選擇性沈積的區域及該基材上先 W未被選擇性沈積的區域。 製成3:::r:第2操作她 有該至少一^層平滑其具有至少一區域含 15料。 至少一£域含有至少該至少-添加材 層並黏接於二::二:多數的“層可被鄰設於前-至第3操作〜戈多」〜月'面上^些添加層係藉重複第1 前一形成曾和原始基材#作—新的加厚=層的製造會將 當所有各層的製造完成之後，至少 少一部份备袖 被沈ί貝材料的至 造的观;_製絲除去，而曝露或㈣所要製 接觸選擇性沈糾料方祕為可順形 j種鍍佈法中，有1多數的可順形接 20 1265981 觸（CC)罩會首先被製成。該cc罩包含一支撐結構，其上黏 接或設有一圖案化的可順形介電材料。每一罩體之可順形 材料皆會依據所钱著材料㈣定截面來被成形。所要鐘 著之每一特定截面圖案皆需要至少一 CC罩。 5 15 2〇 一CC罩的支撐物典型為一金屬所製成的板狀結構，其 會被選擇性地電鑛，而要被鐘佈的材料會由其溶出。於此 /、51的方法中，该支樓物將會形如一電鍍製程中的陽極。 :在：變化方法中，該支撐物則可為一多孔或穿孔的材 料，於一電鍍操作中欲沈積材料將會通過該等穿孔而由遠 =的陽極移至—沈積表面上。於上述任-例中，CC罩皆可 2用一共同支撐物，即用來鍍著多層材料之可順形介電材 邛1圖案，係可設於單一支撐結構的不同區域中。當單一 ^結構包含多贿佈圖案時’該整個結構會被視為一 cc ，而個別的鍍佈罩則可被視為一“次罩，，。在本申請案中， I另】/、在當要製成一特定點時才有分別。 心在準備進行第—操作的選擇性沈積時，該CC罩的可順 先^會破對準壓抵於該基材（或前—形成層或者一層的 係^積部份)上之所要沈積的選擇部份上。該沈罩與基材 種方法來壓抵在-起，而使該CC罩之可順形部份中 嘴升)有開孔内皆會含納電麟液。該cc料_基材的可 碑=料會形成電沈積的阻障，而在CC罩中的開孔内會填 戍:链溶液’故當供人-適當的電壓及/或電流時，即會形 一 料由—陽極(例該^罩支撐物)移轉至該基材之東 分(在電鍍操作時會形成陰極）的通路。 1265981 ^ —CC罩及CC罩鍍佈法之例被示於第1(a)〜1(c)圖中。 白第1(a)圖示出一〇：罩8的側視圖，其係由圖案化於陽極^上 的可順形或可撓變(例如彈性的）絕緣體1〇所構成。該陽極具 5 ^兩種功能。第1⑷圖亦示出—基材6與該罩體8分開。該陽 =之功能係作為該圖案化絕緣體1 〇的支撐材料以保持其 I體性和排列對準，因為該圖案的庵形可能非常複雜(例如 ^有許^絕緣材料的隔離“島”）。其另—功能係作為該電鐘 缸作的陽極。cc罩錄佈法會選擇性地沈積材料η於—基材 6上’其係簡單地將該絕緣體壓抵於基材上，經由該絕 10緣體中的孔㈣a’26b等來電沈積材料，如⑽)圖所示。 ，貝後"玄CC罩會與該基材6分開（最好係非解體地），如 第1(c)圖所示。該cc罩鍍佈法與―“穿孔罩，，鍵佈法之區別 在於’該穿孔罩鎮佈法的罩蔽材料與該基材分離時將會發 生解體。如同穿孔罩㈣法，該佈法亦會選擇性地 15將材料同時地沈積在整個料層上。其錢佈區域可由-或多 ^離的鑛佈區所構成，該等隔離的錢佈區可屬於所要製 單獨、。構’或屬於要被同時製成的多個結構。在CC 罩鑛佈法中，因個別的罩體並不會被刻意地破壞，故它們 能在多個艘佈操作中一再重複使用。 20另;;種沈罩與cc罩鍍佈法之例係被示於第i⑷〜1(f) 2中第⑷圖不出一陽極12,會與一罩體8,分開，該罩體包 '圖木化的可順形材料1()’及―支擇結構2G。第⑷圖亦示 “才…亥罩體8,分開。第⑽圖示出該罩體8,係被設 成與該基材6接觸。第聊示出該沈積物22，，其係將-電 10 1265981 流由陽極！2,導至該基材6所造成者。第1(g)圖示出該沈積物 22,在與罩體8,分離後仍留在該基材6上。於本例中，一適當 的電解液會置於該基材6與陽極12，之間，而一來自該:: 及/或陽極的離子流將會經由該罩體的開孔被導至基材上 5所要沈積材料之處。此類型的罩體可稱為盔陽極= mSTANT MASK™(綱)或無陽極可順形接觸(Acc)罩。工 不同於穿孔罩鍍佈法，該CC單鑛佈法能容許cc罩鱼所Publishing, Inc., June 1999 o The contents of the above nine publicly available materials are hereby incorporated by reference. The electrochemical deposition process can be carried out in a manner similar to that described in the above-mentioned patents and publications, which performs three separate operations in forming the layers of the structure to be fabricated: Decapsulation is used to selectively deposit at least one material onto one or more desired regions of the substrate. ^•..., ^ hunting electrodeposition to deposit at least one additional material on the cladding, so that the added material is overlaid on the selectively deposited region and the substrate is not selectively deposited on the substrate. Area. Made of 3:::r: the second operation she has at least one layer smoothing which has at least one region containing 15 materials. At least one of the domains contains at least the at least-added layer and is bonded to the second:: two: the majority of the "layers can be placed adjacent to the front-to-third operation ~ Godot" ~ month's surface By repeating the first previous formation and the original substrate #made - the new thickening = layer manufacturing will be completed when all the layers are completed, at least a part of the sleeves are made of the sinking material ; _ silk removal, and exposure or (d) required contact selective sinking material secrets can be compliant j-type plating method, there is a majority of the splicing 20 1265981 touch (CC) cover will be first made to make. The cc cover includes a support structure to which a patterned, conformable dielectric material is bonded or provided. The compliant material of each cover will be shaped according to the cross section of the material (4). At least one CC cover is required for each particular cross-sectional pattern to be clocked. 5 15 2〇 The support of a CC cover is typically a plate-like structure made of metal, which is selectively electro-mineralized, from which the material to be clothed is dissolved. In the method of /, 51, the branch will be shaped like an anode in an electroplating process. In the method of variation, the support may be a porous or perforated material through which the material to be deposited will be moved from the far anode to the deposition surface during the electroplating operation. In any of the above examples, the CC cover can be provided with a common support, i.e., a pattern of a conformable dielectric material 镀1 for plating a plurality of layers, which can be disposed in different regions of a single support structure. When the single structure contains multiple patterns, the entire structure will be treated as a cc, and the individual plating covers can be regarded as a "secondary cover." In the present application, I is another. There is a difference when a specific point is to be made. When the core is ready for selective deposition of the first operation, the CC cover can be pressed against the substrate (or the front-forming layer). Or a selected portion of the layer to be deposited on the selected portion of the layer. The cover and the substrate are pressed against the substrate to raise the mouth of the CC cover. The opening of the hole will contain nano-electric liquid. The material of the cc material will form a barrier of electrodeposition, and the opening in the CC cover will be filled with: chain solution. - Appropriate voltage and / or current, the shape of the anode - (for example, the shield support) is transferred to the east of the substrate (the cathode will form during the plating operation). 1265981 ^ — Examples of the CC cover and the CC cover plating method are shown in Figures 1(a) to 1(c). White 1(a) shows a side view of the cover 8 which is patterned by The anode can be conformed or flexible ( For example, an elastic insulator 1 is formed. The anode has two functions. The first (4) diagram also shows that the substrate 6 is separated from the cover 8. The function of the anode is used as the patterned insulator 1 Support material to maintain its I body and alignment, because the shape of the pattern may be very complicated (for example, the isolation "island" of the insulation material). The other function is the anode of the electric clock cylinder The cc hood method selectively deposits the material η on the substrate 6 by simply pressing the insulator against the substrate, and depositing the material via the holes (4) a'26b in the rim 10 body. As shown in (10)), the Behind "Xuan CC cover will be separated from the substrate 6 (preferably non-disintegrated), as shown in Figure 1(c). The cc cover plating method and "Perforated cover, the difference between the keying method is that the cover material of the perforated cover will be disintegrated when separated from the substrate. As with the perforated cover (four) method, the cloth also selectively deposits the material simultaneously over the entire layer. The area of the money cloth may be composed of a mine area of - or more, and the isolated money cloth area may belong to the individual. The structure 'is either a plurality of structures to be made at the same time. In the CC hood method, since individual hoods are not intentionally destroyed, they can be reused repeatedly in a plurality of cloth operations. 20; the example of the hood cover and the cc cover plating method is shown in the i(4)~1(f) 2 (4). The anode 12 is not shown, and is separated from a cover 8, which is covered. 'The wood-like conformable material 1 ()' and the "selective structure 2G". The figure (4) also shows "only the cover 8 is separated. The cover (8) shows that the cover 8 is placed in contact with the substrate 6. The first discussion shows the deposit 22, which will be - The electricity 10 1265981 flows from the anode! 2 to the substrate 6. The first (g) diagram shows the deposit 22 remaining on the substrate 6 after separation from the shell 8. In this example, a suitable electrolyte will be placed between the substrate 6 and the anode 12, and an ion stream from the: and/or anode will be conducted to the substrate via the opening of the shell. The top 5 places where the material is to be deposited. This type of cover can be called helmet anode = mSTANT MASKTM (guide) or non-anode conformable contact (Acc) cover. Unlike the perforated cover plating method, the CC single mine Bufa can allow cc cover fish

要鑛佈之基材完全分開地來製造(例如與_所要形成的3D 結構分開地來製造）。CC罩可用許多方法來製成，例如，可 10用光微影法。所有的罩體皆可在該結構製造之前而非在其 製造期間來統合地同時製成。此分開製造可形成一簡單了 低成本、自動化、自含式，且内部乾淨的“桌上工廠，，，直 幾乎可被設在任何處來製造犯結構，而僅留下任何需要無 塵室的製程，例如光微影法另由特定部門來完成。… 15 前述電化學製造法之一例将誠-Μ — 於第2⑷〜2(f)圖中。 •圖式不出該製法包括-第—材料2(犧牲材料)及一第二 材料4(結構材料）的沈積。在此例中，該CC罩8包含一圖安 料10(例如-彈性介電材料)及-由沈積_ :衣成^支撐物12。該CCI之可順形部份係壓抵於基材6 亡=7電職14位於該可順形材料_開孔16内。 兼二由⑷兼作為陽極的支撐物12及(b) =2 =基材來通過該電鑛溶液。第圳圖表示電流的 ^=讀溶液中的材料2,且該材料2會由陽肋選 擇性地私轉而鑛著在陰極6上。在使用CC罩8將第-沈積材 11 1265981 10 15 20 料2電鑛於基材6上之後，該Cq8即會被除去，如第剛 圖所示。第2㈡圖示出該第二沈積材料4已被覆面沈積(即非 選擇性沈積)在先前沈積的第一沈積材料2上以及該基材6 的其餘部份上。由該第二材料構成之陽極(未示出）因電錄所 產生的覆面沈積物將會通過_適#的電鑛溶液(未示出又)來 移轉至該陰極/基材6上。該雙材料層騎會被整體平坦化來 達到精柄厚度和平坦度，如第2_所示。在為所有各層 完成此程序之後，由第二材料4(即結構材料)所形成的多: 結構20會被埋在第-材料2(即犧牲材料）中，*第2⑷圖二 示。該埋入結構將會被_而形成所需裝置，即結⑽， 如第2(f)圖所示。 -舉例的人工電化學製造緒32之各種構件乃被示於 第3⑷〜3_中。該系統观由數個次系統％ u， 4〇等所組成。該基材固持次系統34係示於第3⑷至3(〇圖的 上部，而包含數個構件：⑴—載具48，（2)_金屬基_其 上會被沈積料層’及(3卜線性滑塊42能夠回應來自致動器 44的驅動力而相對於該載具48上下移動該基材6。該次系: 34亦包含-指示器46可測量該基材之麵位置的變異:、其 可用來設定或判斷料層厚度及/或沈積厚度。該次系統从= 包含截具48的支腳68，可被精確地固裝在次系統％上 該CC罩次系統36係被示於第3(勾圖的下部，而包含數 個構件：⑴-CC树實際上係由“―共同切物齡 !2的多個CC罩（即次罩體)所組成，（2)精密秘54，⑺精密 Y枱56，（4)框架72其上可固裝次系統％的支腳幼’及⑺一 12 1265981 槽58可容裝電解液16。該次系統34和36亦含有適當的電接 點（未示出）可連接於一適當的電源來驅動該cc罩鍍製種。 該覆面沈積次系統38係示於第3(b)圖的下部，而包含數 個構件：（1)一陽極62，（2)一電解槽64可供容裝電鍍溶液 5 %，及框架74其上可置設次系統34的支腳68。該次***邡 亦包含有適當的電接點（未示出）可將陽極連接於一適當的 電源以供驅動該覆面沈積製程。 該平坦化次系統40係示於第3(c)圖的下部，而包含—拋 光板52及附設的作動和控制系統（未示出）以供平坦化沈積 10 物。 除了上述内容之外，該NO.6027630美國專利顯示該電 鍍方法亦能與絕緣材料結合使用。尤其是其顯示雖所揭的 電鍍實施例係使用兩種金屬，但有多種材料諸如聚合物、 陶篆及半導體材料，及任何數目的金屬等，皆可藉前述的 15電鍍法，或在整個電鍍製法中所發生的個別程序中來被沈 積。其顯示一薄電鑛座可例如藉濺射來沈積在一不充分導 電的沈積物（例如一絕緣層）上，俾供進行後續的電鍍。其亦 顯系多種支撐材料（即犧牲材料）亦可被包含於電鍍元素 中，而可選擇地除去該等支撐材料。 由電鍍金屬來製造微結構的另一種方法（即使用電化 學製造技術)係被揭於Henry Guckel的Νο·519〇637美國專利 中，其名稱為以多等級 >朱X光微影法及犧牲金屬層來繁造 微結構的方法”。此專利揭示利用阻罩曝光來製造金屬結構 的万法。一第一層主金屬會被電鍍在一曝露的電鍍座上來 13 1265981 填滿一光阻中的空隙，該光阻嗣會被除去，且一第二金屬 會被電鍍在該第一層與電鍍座上。該第二金屬的曝露表面 嗣會被加工磨低至一高度一而曝現第一金屬來形成一平坦 均勻的表面延伸通過該第一和第二金屬。然後一第二層的 5 形成可藉佈設一光阻層於該第一層上，並重複用來製造第 一層的製程而來完成。該製程會一再重複直到整個結構形 成，且該第二金屬被刻除去為止。該光阻可藉鑄造來成 形於該電鍍座或前一層上，且該光阻中的空隙得以X光或 UV輻射經由一圖案化罩曝光該光阻而來形成。 10 雖已可見該等技術，但在電化學製造領域中仍有需要 一些技術來改善產品可靠性，增進料層製程操作後的控 制，提高料層製造後處理容易度，及克服可能會使產品故 障失效的製程瑕疵等。 I：發明内容】 15 發明概要 本發明之各種態樣的某些實施例之一目的係為改善電 化學製造產品的可靠度。 本發明之各種態樣的某些實施例之一目的係為加強料 層製程後的控制，及克服可能會造成產品故障的製程瑕疵。 20 本發明之各種態樣的某些實施例係為使料層製造的後 處理更為容易。 本發明之各種態樣的某些實施例係為克服可能造成產 品故障的製程瑕疵。 本發明之各種態樣的其它目的和優點等，專業人士將 14 1265981 可在參閱本文之後輕易得知。於此所揭述或由所揭内六。 推知之本發明的各種概念，將可單獨或組合來達成上、,、 任一目的，或其可能不能達成上述的目的，但卻可達=由 本文可推知之本發明的某些其它目的。並非所有哕等目、 皆能由本發明之任何單一態樣來達成，雖缺 、的 …、平一目的可能 相關於某些態樣。 本發明的第-態樣係提供一種由多數點接層來製成— 多層犯結構的電化學製造方法，&含：（A)沈輕少二犧牲 材料及^少一結構材料於一基材上來製成—層，該基材可 1〇包括先前沈積層，而至少一該等材料的沈積包含電沈積操 作;(B)重複(A)步驟一或多次來製成多數層，而使後續層^ 鄰並黏接於先前形成層；（C)進行一第一钱刻操作來由^各 層或基材上除去至少—材料的至少第—部份；及⑼進行— 與第一姓刻操作不同的第二姓刻操作，來由該各層或基材 15上除去至少一材料的至少一部份。 本毛月的第_悲樣係提供一種由多數點接層來製成一 3D、、、口構的甩化學製造方法，包含：⑷沈積至少一犧牲材料 及f少一結構材料於一基材上來製成一層，該基材可包括 先則沈—積層’而至少—該等材料的沈積包含電沈積操作； (B)重杈(A)步驟—或多次來製成多數層，而使後續層緊鄰並 黏接於切形絲；（〇奸-第-__來由該各層或 基材上除去至少一材料的至少第-部份；（D)在第-敍刻操 作完成後，進行一千井γ ^ 卞夕彳呆作；（Ε)在該干涉操作之後進行一 第二钱刻操作，來由該各層或基材上除去至少一材料的至 15 1265981 少一部份。 本發明的其它態樣將可在專業人士參閱本文之後輕易 暸解。本發明的其它態樣可包括本發明之上述態樣的組 合，及/或/或多種實施例之各種特徵的附加。本發明的其 5 它態樣可包括用來實施本發明之一或多種上述方法態樣的 裝置。本發明的其它態樣可提供上述諸態樣的各種組合， 以及未詳述於上的其它構造、結構、功能性關係和製法等。 圖式簡單説明 第1(a)〜1(c)圖概略地示出一 CC罩鍍佈法之不同階段 10 的側視圖；而第Ud)〜1(g)圖係概略地示出一使用不同類型 之CC罩的鍍佈法之不同階段的側視圖。 第2(a)〜2(f)圖概略地示出一用來形成一特定結構的電 化學製造方法之不同階段的側視圖，其中有一犧牲材料會 被選擇性沈積，而一結構材料會被覆面沈積。 15 第3(a)〜3(c)圖概略示出可用來人工實施第2(a)〜2(f) 圖中之電化學製法的各種次組合例之側視圖。 第4(a)〜4(i)圖概略示出使用黏接罩鍍佈法來製成一結 構的第一^層’其中一第二材料的覆面沈積會覆蓋第一材料 在各沈積位置之間的開孔以及第一材料本身。 20 第5(a)圖示出第一組實施例之基本操作的方塊圖。 第5(b)〜5(d)圖示出第5(a)圖之操作2的變化例方塊圖。 第6(a)圖示出第二組實施例的方塊圖。 第6(b)圖示出第三組實施例的方塊圖。 第7(a)〜7(d)圖係概略地不出弟6(a)圖的貫施例應用於 16 1265981 一特定層組之各不同階段的侧視圖。 第8⑷〜8⑷圖係概略地示出本㈣另—實施例之不 同階段的側視圖。 5 10 15 20 第9⑷〜9(c)圖係概略地示出可用來修正製造瑕疮之 本發明另一實施例的不同階段側視圖。 第释)與剛圖分別示山-第四及_第五組實施例 的方塊圖。 、第11圖示出-同軸職置的立體圖，其可被電化學製 造’且可由該結構材料的製程後之多步驟 操作的釋放來獲益。 / 第12⑷〜12(e)圖概略地示出1虫刻與滲透製程之各 不同階段，其係穿過—類似於第11圖之同軸裝置的四條分 支之一的叫雜線巾間看在-切面（平躲該基材平 面）上所見者，其中可看到一中心導 導體的_孔等。 一及延伸貫穿兩側外 第13圖示出第10圖之同轴裝置的立贿 戸t 版圖，及一添加的 开敝、、、吉構形成一“煙έ) ’’圍繞該結構的中央呻广 第U(物卵示出第12圖的結構Ί加—暫時的 刻擒止層(於第i賴被示㈣份透明的，而 2透明的），其會罩蔽該結構之各臂在“煙自，，區外的末端 第15圖示出與第· 12〜14圖相同的同轴裝置之立體 圖，但具有-不同似的㈣㈣，其有助於提供多階段 名虫刻$文果。 17 1265981 第16圖示出第15圖的同軸裝置，其中可更清楚地看出 一臂的内部，並可看出該蝕刻阻障並未完全地延伸至該基 材。 第17 (a)圖示出第15及16圖的裝置之一同軸臂和蝕刻阻 5 障的端視圖；而第17(b)圖示出同一結構的端視圖，但具有 一雙層姓刻阻障。 第18(a)及18(b)圖示出第六和第七組實施例之製程操 作的方塊圖。 第19(a)〜19(e)圖概略地示出第18(a)圖之一製法實施 10 例的側視圖。 I：實施方式】 較佳實施例之詳細說明 第1(a)〜1(g)，2(a)〜2(f)，3(a)〜3(c)圖乃示出一種習 知之電化學製法的不同特徵。其它的電化學製造技術係被 15 揭於上述之No.6027630美國專利案，各先前公開資料，及 所附送之各其它專利和專利申請案中，亦有其它可由該等 公開資料、專利、及專利申請案等所述的各種方法來組合 衍生，或者專業人士可由本案所揭内容來推知者。所有該 等技術皆能與於此所揭之本發明各種態樣的不同實施例來 20 結合以產生更佳的實施例。亦有其它實施例可由在此所揭 之各種實施例的組合來衍生形成。 第4(a)〜4(i)圖示出於一多層製法中製成單一層之各階 段，其中有一第二金屬會沈積在一第一金屬上及該第一金 屬的開孔内，而其沈積物會形成該層的一部份。在第4(a) 18 1265981 圖中，乃示出一基材82的側視圖，其上有可圖案化光阻84 會被成形如第4(b)圖所示。在第4(c)圖中，一光阻圖案係由 固化、曝光、顯影該光阻而來形成。該光阻84的圖案化會 造成開孔或孔隙92(a)〜92(c)等由該光阻的表面86穿過其 5 厚度而延伸至基材82的表面88。在第4(d)圖中，一金屬94(如 鎳）已被電鍍於該等開孔92(a)〜92(c)内。在第4(e)圖中，該 光阻已被由基材上除去（例化學剝除），而曝露出該基材82 上未被第一金屬94覆蓋的區域。在第4(f)圖中，一第二金屬 96(例如銀）已被電鍍覆蓋在該基材82(其係可導電的）之整 10 個曝露部份與第一金屬94(亦可導電）上。第4(g)圖示出已完 成該結構的第一層，其係將第一和第二金屬平坦化磨低至 一高度以曝露第一金屬並設定第一層的厚度而來製成者。 在第4(h)圖中係重複第4(b)〜4(g)圖中的步驟多數次來製成 一所示的多層結構，其中每一層皆含有兩種材料。針對大 15 部份的用途，該兩種材料之一者將會被除掉如第4(i)圖所 示，來形成一所需的3D結構98(例如構件或裝置）。 於此所揭之各種實施例、變化例和技術等係能與使用 不同形式的圖案化罩及罩鍍技術之電化學製造技術來結合 使用。例如，可順形接觸罩及罩鍍操作可被使用，近設罩 20 及罩鍍操作亦可使用（即利用至少部份選擇性地罩蔽一基 材之罩體的操作，該等罩體係靠近於該基材但不一定完全 接觸），非順形罩及罩鍍操作亦可使用（即接觸表面並不充分 撓變順形的罩體和依據該等罩體的操作），黏接罩及罩鍍搡 作亦可使用（即黏接於一基材的罩體和使用該等罩體的操 19 1265981 作，忒基材上僅會在未被接觸的部份被選擇性地沈積或蝕 刻）〇 土弟5(a)圖不出一第一組實施例之基本操作的方塊圖。方 鬼1 〇 2不出在第_操作（即操作i)中有多數料層將會被製成 5 (例如以電化學製造），而它們包括：⑴—所需結構係由至 少:種結構材料所製成，及(2)_犧牲支撐結構係由至少一 種犧牲材料所製成。方塊1〇4示出一第二操作（即操作幻包括 、行夕人刻操作來除去至少_犧牲材料的所需部份，其 中各餘刻操作是以-所需姓刻劑與一所需方法來進行。: 10本申請案中，有些實施例會使用二次或更多的餘刻操作， 而各以至少硬擋止點，，來分開（即用來結束該等姓刻操作 之固定或近乎固㈣終點）。其它的實施例可不用硬撞止點 來區分接續的蝕刻操作。 15 20 第5(b)〜5(d)圖則示出用來說明第5⑷圖的操作2之各 種變化實施例的方塊圖。在第5(b)圖中係示出該操作2包: 至少二要件：⑴使用第—㈣劑來進行第一㈣HZ，及(2) 使用肖第一蝕刻劑不同的第二蝕刻劑來進行第二蝕刻 114。在第5(b)_實施例中，該二方法係可相同，只是所 用的姓刻劑不同。在第5(c)圖中，乃示出該操作2包含至少 二要件：⑴-第-侧m係使用—飯刻劑及第—種方法"， 及(2)—第二蝕刻124係使用一蝕刻劑及_與第—種方法不 同的第二種方*。在第5㈡圖的實施例中，該二钱刻劑係^ 相同。第5(d)圖示出該操作2包含至少二要件：（1)_第一'蝕 刻132使用一第一蝕刻劑和第—種蝕刻法，及(2)—第二蝕列 20 1265981 m用—fr則糾第二㈣聽，其切第二钱刻劑 法。：:二一敍刻劑’且第一鞋刻法亦不同於第二钱刻 5 10 15 20 改變溫度，改變搖晃或流動时祕刻法，·但 度，改變韻刻劑中所含的式’大戏變姓刻劑的漠 將會構成使用不同的或㈣其它的參數等， 第在第6(樹係示出該操作2包括至少三個要件：⑴一 弟—蝕刻14，（2)在第_蝕划—从 1 ； 部份上逸〜Λ 於所存留各層的至少一 圖更提=!作144,及(3) 一第，146。第6⑻ 不Π的射m進仃弟二操作144的人個例子：（Α)使用一 不冋的蝕刻劑及/或不同的方 相同或不同的材料上進行中門^弟一姓刻劑操作之 入、卜 進订一中間钱刻144七⑻以-材料滲 入破弟-峨留下之一空隙的至少一部份，144 料各別的構件使它們互相分開，144_3; (d)沈積添加材料 144_4;⑹以非钱刻之操作例如平坦化操作來除去某师料 1体5 ;⑺由所依附之基材上來分開該結構_ ;⑼固接 -第二基材或構件’並可能除去該結構原依附的基材， 1体7;及/或(H)進行一熱處理操作144_8。當然尚有許多盆 它可能的中間操作可在專業人士參閱本文之後輕易得知。 第6⑻圖示出該操作2包含至少三個要件：⑴第一姓刻 142 ’（2)進行-干涉的非後處理操作148，及⑺第二触刻 146。第6(b)圖亦提供可能用來進行該干涉操作148的三個例 子：⑷更換所使㈣㈣靡叫；⑼清理該結構而由局 部區域除去飽和的餘刻劑148_2 ;及/或(c)相肖於該姓刻劑 21 1265981 來重置該結構，例如針對重力來旋轉它以改善效率，或將 該結構之一不同部份曝露於姓刻劑，或由該_劑中抽出 騎構的一部份等等，148小在⑻中所示的清理操作可在 …、爲水’或月b易於除去飽和钱刻劑的其它物質中沙洗。其 5亦可包括該結構的搖晃或導入一清潔液流。 有些上述實施例可被實施的各種狀況例係被示於第 7⑷〜7(d)，8(a)〜8(c)，及9⑷〜9(c)圖中。 口口第7(a)〜7(d)圖示出一例，其巾有單一結構材料被用來 與早-犧牲材料組合。在本例中，該所需的多層結構观係 1〇 j三層材料所包圍。該多層結構搬首先會被—犧牲材料的 第一區204所包圍（除了該結構接觸該基材21〇的部份以 外）。该犧牲材料204的第一區會被一結構材料的阻罩2〇6(例 如一薄罩）所包圍（除了其接觸該基材21〇的部份以外）。該阻 罩206又會被該犧牲材料的第二區208所包圍（除了其接觸 15 该基材210的部份以外）。 该犧牲材料的第一區204和第二區208係可分別由用來 構建各料層的製程所形成（例如其橫向建構尺寸可具有固 定的範圍而無干於所需結構202的橫向尺寸，且若非為所需 結構的一部份，則大致可由犧牲材料來製成）。在本例中， 2〇該P旦罩206係用來在第二區域208蝕刻時能具有一受控的蝕 刻擋止點。 該等擋止點有許多理由乃是必需的。例如，若用來除 去該犧牲材料的蝕刻劑並不具有夠高的選擇性來優先除去 該犧牲材料，則曝露於結構材料蝕刻劑的結構材料區域在 22 1265981 10 15 20 較長時間或較高程度的搖晃時，可能會遭受不可接受的損 壞程度’而曝露於該姓刻劑較短時間的結構材料區域可能 不會受到如此程度的損害。於此等狀況下，該阻罩观可用 來協助確保—較少的關時間及/或更均-_刻時間，而 心改善所製成結構的品質。在有些實_巾，該阻罩可為 -矩形盒如第7(a)與7(b)圖所示，而在其它實施例中，該阻 罩的造型能順應匹配或至少部份順應於該結構的形狀，俾 留下更均勻的犧牲材料厚度以待最後的姓刻操作來除去。 j某些實_中，雜罩可具有大致均―的厚度，而其它 的阻罩可能具有不同的厚度，例如，純有内部表 面順應於該結構的形狀時。 擊4ΓΓ中’該犧牲材料的㈣ 1最好係以-種不會攻 =的叫_，但其亦能以一種對阻罩206比 刻即會刻㈣進行。當達到該阻罩施時，钱 阻罩206的結構材j — 層製造後操作將會啟動。該 不合攻擊㈣1 選擇性钮刻劑來崎，其將 它）。若有干 4(或僅會以—更慢甚多的速率來攻擊 然後當操作將可在此時啟動’ 曝露多^構:的最後㈣’而來 可為^某二^例令，該犧牲材料可為銅，而該結構材料 餘刻另、Ί’厂會被適當地選擇僅能餘刻其一，但不能 。例如，該鎳蝕刻劑可為獲自Enth_-OMI之 23 1265981The substrate to be mined is manufactured completely separately (for example, separately from the 3D structure to be formed). The CC hood can be made in a number of ways, for example, by photolithography. All of the covers can be made simultaneously at the same time before the structure is manufactured, rather than during its manufacture. This separate manufacturing can form a simple, low-cost, automated, self-contained, and internally clean "table factory," that can be placed almost anywhere to create a structure that leaves only the need for a clean room. The process, such as photolithography, is done by a specific department.... 15 An example of the aforementioned electrochemical manufacturing method is Cheng-Μ - in Figure 2(4)~2(f). - deposition of material 2 (sacrificial material) and a second material 4 (structural material). In this example, the CC cover 8 comprises a figure 10 (for example - elastic dielectric material) and - by deposition _: clothing The support 12 is formed. The compliant portion of the CCI is pressed against the substrate 6 to be dead = 7 electric power 14 is located in the compliant material _ opening 16. The second is (4) also serves as the support of the anode 12 And (b) = 2 = substrate to pass the electromineral solution. The figure shows the current in the ^ = reading material 2 in the solution, and the material 2 will be selectively eclipsed by the male rib and mined at the cathode 6 After the first deposition material 11 1265981 10 15 20 is electro-mineralized on the substrate 6 using the CC cover 8, the Cq8 is removed as shown in the first figure. Figure 2 (2) The second deposition material 4 has been deposited (i.e., non-selectively deposited) on the previously deposited first deposition material 2 and the remainder of the substrate 6. An anode composed of the second material (not shown) The cladding deposits produced by the electro-recording will be transferred to the cathode/substrate 6 by the electro-mineral solution (not shown). The bi-material layer ride will be flattened as a whole. The thickness and flatness of the fine shank are achieved, as shown in the second step. After the completion of this procedure for all the layers, the second material 4 (ie, the structural material) is formed: the structure 20 is buried in the first material 2 ( That is, the sacrificial material), * 2 (4) Figure 2. The buried structure will be formed into the desired device, ie, the junction (10), as shown in Figure 2(f). - An example of artificial electrochemical fabrication The various components are shown in the third (4) to 3_. The system view is composed of a number of sub-systems, such as % u, 4 , etc. The substrate holding subsystem 34 is shown in the third (4) to 3 (upper part of the figure) And contains several components: (1) - carrier 48, (2) _ metal base _ on which will be deposited layer ' and (3 linear slider 42 can respond to the actuator The driving force of 44 moves the substrate 6 up and down relative to the carrier 48. The sub-system: 34 also includes an indicator 46 that measures the variation in the position of the substrate: it can be used to set or determine the thickness of the layer. And/or deposit thickness. The secondary system from the = leg 68 containing the clip 48 can be accurately fixed to the secondary system %. The CC shroud system 36 is shown in the third (the lower part of the figure) It consists of several components: (1) The -CC tree is actually composed of "a plurality of CC covers (ie, secondary covers) of "Common Cut Age! 2", (2) Precision Secret 54, (7) Precision Y Station 56, (4) The frame 72 can hold the electrolyte 16 on the top of the sub-system with the sub-system and the (12)- 12 1265981 slot 58. The secondary systems 34 and 36 also contain suitable electrical contacts (not shown) that can be coupled to a suitable power source to drive the cc cover plating. The overlay deposition subsystem 38 is shown in the lower portion of Figure 3(b) and includes several components: (1) an anode 62, (2) an electrolytic cell 64 for accommodating a plating solution of 5%, and a frame 74. The legs 68 of the secondary system 34 can be placed thereon. The subsystem 邡 also includes suitable electrical contacts (not shown) for connecting the anode to a suitable power source for driving the cladding deposition process. The planarization subsystem 40 is shown in the lower portion of Figure 3(c) and includes a polishing plate 52 and an associated actuation and control system (not shown) for planarization deposition. In addition to the above, the U.S. Patent No. 6,026,530 shows that the electroplating method can also be used in combination with an insulating material. In particular, it is shown that the electroplating embodiment disclosed uses two metals, but various materials such as polymers, ceramics and semiconductor materials, and any number of metals, etc., may be by the aforementioned 15 plating method, or throughout It is deposited in individual procedures that occur in the electroplating process. It is shown that a thin electric ore can be deposited, for example by sputtering, on an insufficiently conductive deposit (e.g., an insulating layer) for subsequent plating. It is also apparent that a plurality of support materials (i.e., sacrificial materials) may also be included in the plating elements, and the support materials may be selectively removed. Another method of fabricating microstructures from electroplated metals (i.e., using electrochemical fabrication techniques) is disclosed in Henry Guckel's U.S. Patent No. 5,519, 637, entitled "Multi-Level" > A method of sacrificing a metal layer to create a microstructure. This patent discloses a method of fabricating a metal structure using a mask exposure. A first layer of the main metal is plated on an exposed plating pad to fill a photoresist in 13 1265981. a gap, the photoresist will be removed, and a second metal will be electroplated on the first layer and the plating seat. The exposed surface of the second metal will be ground down to a height of one and exposed a metal to form a flat uniform surface extending through the first and second metals. A second layer 5 is then formed by depositing a photoresist layer on the first layer and repeating the fabrication of the first layer The process is completed. The process is repeated until the entire structure is formed, and the second metal is removed. The photoresist can be formed by casting on the plating pad or the previous layer, and the gap in the photoresist can be X-ray or UV radiation Formed by a patterned mask to expose the photoresist. 10 Although these techniques have been seen, there are still some technologies in the field of electrochemical manufacturing to improve product reliability, improve control after layer processing, and improve materials. The ease of handling after the layer is manufactured, and the process of overcoming the failure of the product failure, etc. I: SUMMARY OF THE INVENTION 15 SUMMARY OF THE INVENTION One of the embodiments of various aspects of the present invention is directed to improving the manufacture of electrochemical products. Reliability One of the embodiments of various aspects of the present invention is directed to enhancing control of the layer after processing and overcoming process defects that may cause product failure. 20 Certain embodiments of various aspects of the present invention It is to make post-processing of the production of the layer easier. Some embodiments of various aspects of the invention are directed to overcoming process defects that may cause product failure. Other objects and advantages of various aspects of the invention, etc., professionals 14 1265981 is readily available after reference to the text. It is hereby incorporated by reference or in its entirety. To achieve any of the above, or any purpose, or may not achieve the above objectives, but up to = some other purpose of the invention as may be inferred from this disclosure. Not all of the items may be any single unit of the invention The aspect is achieved, although the lack of ..., the purpose of the flat may be related to certain aspects. The first aspect of the present invention provides a method of electrochemical fabrication of a multi-layered structure made up of a plurality of dot-bonding layers, & And comprising: (A) a lightly sacrificial material and a less structural material on a substrate, the substrate may comprise a previously deposited layer, and at least one of the deposition of the material comprises electrodeposition (B) repeating the (A) step one or more times to make the majority layer, and then making the subsequent layer adjacent to and bonding to the previously formed layer; (C) performing a first etching operation to obtain the layers or bases The material is removed from at least - at least a portion of the material; and (9) is performed - a second surrogate operation different from the first surname operation to remove at least a portion of the at least one material from the layers or substrate 15. The first sorrow of the month of the month provides a 3D, and mouth structure chemical manufacturing method comprising a plurality of dot layers, comprising: (4) depositing at least one sacrificial material and f reducing one structural material on a substrate Forming a layer up, the substrate may comprise a first deposition layer - and at least - deposition of the materials comprises an electrodeposition operation; (B) a step of repeating (A) - or multiple times to form a plurality of layers, The subsequent layer is in close proximity to and adhered to the cut wire; (the smuggling - the first -__ to remove at least the first portion of the at least one material from the layers or substrates; (D) after the first-synthesis operation is completed, Performing a thousand wells for γ ^ 彳 彳; (Ε) performing a second etching operation after the interference operation to remove at least one material from the layers or substrates to a portion of 15 1265981. Other aspects of the invention will be readily apparent to those skilled in the art from this disclosure. Other aspects of the invention may include combinations of the above aspects of the invention, and/or additional features of various embodiments. 5 its aspect may include one or more of the above method aspects for implementing the present invention Other aspects of the invention may be provided in various combinations of the above-described aspects, as well as other configurations, structures, functional relationships, methods of manufacture, etc., which are not described in detail. Figure 1(a)~1(c) The diagram schematically shows a side view of a different stage 10 of a CC cover plating process; and the Ud)~1(g) diagram schematically shows the different stages of a plating process using different types of CC covers. Side view. 2(a) to 2(f) schematically show side views of different stages of an electrochemical manufacturing method for forming a specific structure in which a sacrificial material is selectively deposited and a structural material is coated. Surface deposition. 15 Figures 3(a) to 3(c) schematically show side views of various sub-combinations which can be used to manually carry out the electrochemical process of Figures 2(a) to 2(f). 4(a) to 4(i) schematically illustrate the use of a viscous hood plating method to form a first layer of a structure. The deposition of a second material covers the first material at each deposition location. The opening between the first and the first material itself. 20 Figure 5(a) is a block diagram showing the basic operation of the first set of embodiments. 5(b) to 5(d) are diagrams showing a variation of the operation 2 of the fifth (a) diagram. Figure 6(a) shows a block diagram of a second set of embodiments. Figure 6(b) shows a block diagram of a third set of embodiments. The 7(a) to 7(d) diagrams are generally not applied to the side view of the different stages of a specific layer group of 16 1265981. The eighth (4) to (4) drawings schematically show side views of different stages of the fourth embodiment. 5 10 15 20 Figures 9(4)-9(c) are diagrammatically showing different stages of side views of another embodiment of the invention that can be used to modify the manufacture of acne. The first and second figures show the block diagrams of the fifth-fourth and fifth-group embodiments, respectively. Figure 11 shows a perspective view of a coaxial position that can be electrochemically fabricated' and can benefit from the release of the multi-step operation of the structural material after the process. / Figures 12(4) to 12(e) schematically show the different stages of the insect engraving and infiltration process, which are passed through a weft-like towel similar to one of the four branches of the coaxial device of Figure 11 - Seen on the cut surface (to hide the plane of the substrate), in which a hole or the like of a center conductor can be seen. First, extending through the two sides, Figure 13 shows the layout of the coaxial device of Figure 10, and an added opening, and the structure of the building forms a "smoke" around the center of the structure.呻广第U (The object of the egg shows the structure of Figure 12 - the temporary engraving layer (in the first, the fourth is transparent, and the second is transparent), which will cover the arms of the structure In the "smoke from, the end of the outer area, Figure 15 shows a perspective view of the same coaxial device as the 12th to 14th, but with - different (four) (four), which helps to provide multi-stage insects 17 1265981 Figure 16 shows the coaxial device of Figure 15, in which the interior of one arm can be more clearly seen, and it can be seen that the etch barrier does not extend completely to the substrate. Figure 7 shows an end view of one of the devices of Figures 15 and 16 with a coaxial arm and an etch stop; and Figure 17(b) shows an end view of the same structure, but with a double-layered barrier. 18(a) and 18(b) are block diagrams showing the process operations of the sixth and seventh sets of embodiments. Figures 19(a) to 19(e) schematically show one of the 18(a) drawings. 10 cases of system implementation Side view of the preferred embodiment of the preferred embodiment 1(a) to 1(g), 2(a) to 2(f), 3(a) to 3(c) are shown A different feature of a conventional electrochemical process. Other electrochemical fabrication techniques are disclosed in the above-mentioned U.S. Patent No. 6,026,630, each of which is hereby incorporated by reference in its entire entire entire entire entire entire entire entire entire entireties Others may be derived from a combination of the various methods described in the publications, patents, and patent applications, or the disclosure of the subject matter of the present disclosure. All of these techniques can be variously disclosed herein. Different embodiments of the aspects are combined to produce a better embodiment. Other embodiments may be derived from combinations of the various embodiments disclosed herein. Figures 4(a) through 4(i) illustrate In a multi-layer process, each stage of a single layer is formed in which a second metal is deposited on a first metal and into the opening of the first metal, and a deposit forms part of the layer. In the figure 4(a) 18 1265981, a side view of a substrate 82 is shown, which is illustrated The photoresist 84 is formed as shown in Fig. 4(b). In Fig. 4(c), a photoresist pattern is formed by curing, exposing, and developing the photoresist. The pattern of the photoresist 84 The opening or voids 92(a) to 92(c) or the like are caused by the surface 86 of the photoresist extending through its thickness 5 to the surface 88 of the substrate 82. In Figure 4(d), a metal 94 (e.g., nickel) has been plated in the openings 92(a) to 92(c). In the fourth (e) diagram, the photoresist has been removed from the substrate (eg, chemically stripped), The area of the substrate 82 that is not covered by the first metal 94 is exposed. In Figure 4(f), a second metal 96 (e.g., silver) has been electroplated over the entire exposed portion of the substrate 82 (which is electrically conductive) and the first metal 94 (which is also electrically conductive) )on. Figure 4(g) illustrates the first layer of the structure that has been completed by flattening the first and second metals to a height to expose the first metal and set the thickness of the first layer. . The steps in Figures 4(b) to 4(g) are repeated a plurality of times in Figure 4(h) to form a multilayer structure as shown, each of which contains two materials. For the use of the larger portion, one of the two materials will be removed as shown in Figure 4(i) to form a desired 3D structure 98 (e.g., component or device). The various embodiments, variations, and techniques disclosed herein can be used in conjunction with electrochemical fabrication techniques using different forms of patterned masking and masking techniques. For example, a conformable contact cover and a galvanizing operation can be used, and the near cover 20 and the hood plating operation can also be used (i.e., operation using at least a portion of the cover that selectively covers a substrate, the cover system Close to the substrate but not necessarily in full contact), the non-conformal cover and the cover plating operation can also be used (ie, the cover surface does not sufficiently flex the conformal cover and the operation according to the cover), the adhesive cover And the ruthenium plating can also be used (ie, a cover bonded to a substrate and a handle 19 1265981 using the cover, the ruthenium substrate is selectively deposited only in the untouched portion or Etching) 〇土弟5(a) illustrates a block diagram of the basic operation of a first set of embodiments. Fang ghost 1 〇 2 does not show that in the _ operation (ie operation i), most of the layers will be made 5 (for example, electrochemically manufactured), and they include: (1) - the desired structure is at least: The material is made, and (2) the sacrificial support structure is made of at least one sacrificial material. Block 1 示出 4 shows a second operation (ie, the operation phantom includes, the etch operation to remove at least the required portion of the sacrificial material, wherein each of the remaining operations is - the required surname and one required The method is carried out.: 10 In the present application, some embodiments use two or more residual operations, each separated by at least a hard stop, (ie, used to end the fixed or Nearly solid (four) end point. Other embodiments can eliminate the need for hard bumps to distinguish successive etching operations. 15 20 Figures 5(b) to 5(d) show various operations for explaining operation 2 of Figure 5(4). A block diagram of a variation of the embodiment. The operation 2 package is shown in Figure 5(b): at least two elements: (1) using the first (four) agent for the first (four) HZ, and (2) using the first etchant The second etchant is used to perform the second etch 114. In the fifth (b)-th embodiment, the two methods may be the same except that the surname used is different. In the fifth (c) diagram, The operation 2 includes at least two elements: (1) - the first side m is used - the rice cooker and the first method ", and (2) - the second etching 124 is used The etchant and the second method different from the first method. In the embodiment of the fifth (second) diagram, the dime encapsulation system is the same. The fifth (d) diagram shows that the operation 2 includes at least two elements. : (1) _ first 'etch 132 uses a first etchant and first etching method, and (2) - second eclipse 20 1265981 m with -fr then correct the second (four) listen, its cut second money Engraving method.:: Two-one narration agent' and the first shoe engraving method is different from the second money engraving 5 10 15 20 Change the temperature, change the secret method of shaking or flowing, but the degree, change the rhyme The inclusion of the formula 'the change of the surname will constitute the use of different or (d) other parameters, etc., in the sixth (the tree shows that the operation 2 includes at least three elements: (1) a brother - etching 14, (2) In the _ eclipse - from 1; part of the escaping ~ 于 at least one of the remaining layers of the remaining layers to say =! 144, and (3) a first, 146. 6 (8) An example of a person who operates 144 on the second brother: (Α) using a flawless etchant and/or different materials of the same or different materials to carry out the operation of the middle door, the brother's surname, and the middle of the book. Money carved 144 seven (8) The material is infiltrated into at least a portion of one of the voids, and the respective members of the material are separated from each other, 144_3; (d) depositing the additive material 144_4; (6) operating in a non-money manner such as flat To remove a material 1 body 5; (7) to separate the structure from the attached substrate _; (9) fixed-second substrate or member 'and possibly remove the substrate to which the structure is attached, 1 body 7; And/or (H) performing a heat treatment operation 144_8. Of course there are many pots whose possible intermediate operations are readily known to the skilled person after reading this document. Figure 6(8) illustrates that operation 2 includes at least three elements: (1) first The surname 142 '(2) performs a non-post-processing operation 148 of interference, and (7) a second etch 146. Figure 6(b) also provides three examples of possible interference operations 148: (4) replacing (4) (iv) squeaking; (9) cleaning the structure to remove saturated residual agent 148_2 from localized areas; and/or (c) Resetting the structure with the surname 21 1265981, for example rotating it for gravity to improve efficiency, or exposing a different part of the structure to the surname, or extracting the composition from the agent A part of the process, etc., 148, the cleaning operation shown in (8) can be sand washed in ... for water, or other materials that are easy to remove saturated money for the month b. The 5 may also include shaking of the structure or introducing a flow of cleaning liquid. The various conditions in which some of the above embodiments can be implemented are shown in Figures 7(4) to 7(d), 8(a) to 8(c), and 9(4) to 9(c). Ports 7(a) to 7(d) illustrate an example in which a towel has a single structural material that is used in combination with an early-sacrificial material. In this example, the desired multilayer structure is surrounded by three layers of material. The multilayer structure is firstly surrounded by the first region 204 of the sacrificial material (except for the portion of the structure that contacts the substrate 21). The first region of the sacrificial material 204 is surrounded by a mask 2 (e.g., a thin cover) of a structural material (except for the portion of the substrate 21 that contacts the substrate 21). The barrier 206 is in turn surrounded by the second region 208 of the sacrificial material (except for portions of the substrate 210 that contact 15). The first region 204 and the second region 208 of the sacrificial material can each be formed by a process for constructing the layers (e.g., the laterally-constructed dimensions can have a fixed extent without drying the transverse dimension of the desired structure 202, And if it is not part of the desired structure, it can be made substantially from a sacrificial material). In this example, the P-tank 206 is used to have a controlled etch stop when the second region 208 is etched. There are many reasons why these stops are necessary. For example, if the etchant used to remove the sacrificial material does not have a high selectivity to preferentially remove the sacrificial material, the area of structural material exposed to the etchant of the structural material is 22 1265981 10 15 20 for a longer period of time or higher. When the degree of shaking, it may suffer from unacceptable damage', and the area of structural material exposed to the surname for a short period of time may not be so damaged. Under these conditions, the mask view can be used to help ensure that less off time and/or more time is spent, and the heart improves the quality of the resulting structure. In some cases, the mask may be a rectangular box as shown in Figures 7(a) and 7(b), while in other embodiments, the mask may conform to or at least partially conform to The shape of the structure, 俾 leaves a more uniform thickness of the sacrificial material to be removed by the last surname operation. In some cases, the shroud may have a substantially uniform thickness, while other shrouds may have different thicknesses, for example, when the inner surface is purely conformable to the shape of the structure. In the case of 4 ’, the (4) 1 of the sacrificial material is preferably _, but it can also be performed by a pair of masks 206. When the mask is applied, the structural material j-layer manufacturing operation of the money mask 206 will be activated. The non-attack (four) 1 selective button engraving comes to Saki, which will take it). If there is a dry 4 (or only attack at a slower rate, then the operation will be able to start at this time 'exposure multi-structure: the last (four)' can be ^^^^^, the sacrifice The material may be copper, and the structural material may be properly selected to be only one of the remaining, but not. For example, the nickel etchant may be 23 1265981 from Enth_-OMI.

Atotech的Rostdp*錄剝除劑M_7，而鋼Atotech's Rostdp* recording stripper M_7, while steel

Haven，CT.的Enthone C-38。更咩士之于二可為獲自New 乃可被選成不會攻擊犧牲材料(如銅） 5 10 15 20 結構材料的侧劑不必具有相同的選擇差異程= 犧牲材料的輕微損害並無大礙，只要_ _ = 料的㈣劑去除時，不會令祕刻劑意外地達到朗= 構體内即可。找錢作_法巾之各階段係被例示= 7⑻〜7⑷圖中。第7_示出外部的犧牲材料細被除去之 後的階段，第7⑷圖示出該阻罩被除去後的階段，而第 7⑷圖示出最後階段，其中該所需結構202已由犧牲材料2〇4 釋出。在某些變化實施例中，亦可使用多重阻障層。 在某二貝知例中，^亥犧牲材料可例如為鎳，而該結構 材料可為銅。该乂^和^如剝除劑亦可被使用。請注意該 Μ - 7剝除劑會攻擊銅，故最好要確使該剝除劑不會更快甚多 地到達所需結構的某些部份（相較於其到達該結構的其它 郤伤）。在4等實施例中，使用一可順形的阻罩，或至少内 表面能至少部份順應於所需結構表面的阻罩，乃可導致更 均-的飿刻時間，故而能減少損及所需結構的風險。 第8(a)〜8(c)圖示出一例，其中有兩種不同的犧牲材料 會與一結構材料來一起使用。在此製法中一擋止點仍會在 蝕刻過耘中被達到，且蝕刻操作的數次含減少至二來取代 第7(a)〜7(d)圖所示實施例的三次。其亦可能令外部犧牲材 料相同於結構村料。在第8(a)圖巾，一所需的多層結構202 、皮第犧牲材料204完全地包圍（除了其與基材214接 24 1265981 觸的部伤以外）’該第_犧牲材料2G4又會被—第二犧牲材 料全包圍（除了其與基材叫接觸的部份以外）。一第一 姓刻會被用來除去第二犧牲材料212，而—第二㈣會被用 來除去第-犧牲材料在不同的實施例中，所需的料層 形成後製程將可在該等_操作之前，在料__之 時，或在該等蝕刻操作之後來進行。 10 15 在某些實施例中，第二犧牲材料212的内表面與第一犧 牲材料204的外表面係可順應或部份順應於該所需結構搬 的表面’而令用來除去第—犧牲材料的時間能更—致。在 某些貫施财，軸料之廓形目素分析可㈣來獲得第 一和第二犧牲材料的介面形狀，其可令_速率達到某種 均-私度（即除去犧牲材料而使所需結構能在大約同時皆 沿者全部或大部份表面來曝露於姓刻劑），若所造成的形狀 有異於—可順形表面，則至少有部份是由於-或多種以廓 形為基礎祕刻速率因素所造成者，例如在某些區域的姓 刻劑通路X限’或軸劑流量受限，或㈣變成飽和的 趨勢等等。 第9(a)〜9(c)圖示出一例，其中_所需的多層結構2〇2 具有瑕庇203等。該等瑕疯係被示如非常薄的“流條，，，而由 2〇相同於結構202的材料所構成。該等瑕窥可能由未妥當固接 於该基材或先所形成層之不當設置的CC罩或黏接罩底下 之被鑛著的犧牲材料所造雜b現象可稱為“毛邊”），或由平 坦化蚪被良引於犧牲材料中的結構材料所造成（此現象可 稱為“潰染”），或由被鍍著於犧牲材料之裂缝内的結構材料 25 1265981 所造成者(此現象可稱為“彩帶”，其典型會產生㈣向延伸而 在一側向尺寸伸長但在另—側向尺寸非常薄的結構中）。-第 -独刻操作會將該犧牲材料2{34去除，如f9帽所示，但會 留下該等城。因為該#瑕_⑽，故―結構材料侧劑 5可被聽除去鮮概，㈣付會對減獅2的所需部 份造成損害’如第9(e)_示。若祕卿被用來轉該等 瑕蘇亦會攻擊該結構202，則控制钱刻時間是报重要的。為 加強控制，所擇的姓刻劑可稀釋來使用（即令姓刻劑的濃度能 比推薦的或-般所知的用量更少，例如5〇%、25%、鄉， 10或甚至更低於此建議的濃度範圍），或在次正常溫度下來使用 (即溫度低於該餘刻劑被推薦或—般所用的溫度，例如宂， 1CTC，2Gt： ’或比此建議溫度範圍更低許多度卜 第10(a)圖示出第四組實施例的方塊圖。在此組實施例 中如同第7(a) 7(d)圖之例，一餘刻阻罩會由一阻罩材料製 15成，其係可相同於-該等犧牲材料，丨亦可不同。該阻軍材料 會依據-要件來選擇，即該犧牲材料能被⑽而不會姓穿該阻 罩材料，雖然在有些實施例中該餘刻劑會損及阻罩材料亦是可 接受的。在此群組的某些實施例中，該關阻罩可形成一結構 元件的永久部份，即使其造型並非刻意設計的一部份。在此等 2〇實施例中’該阻罩材料的造型並不會負面影響該預期結構的可 利用性。在某些該等實施例中，該阻罩材料得包括一可去除元 件以及-會變成該結構之-永久部份的元件。在某些該等實施 例中，該阻罩之可去除部份係可例如藉姓刻操作、平坦化操 作、或其它的加工操作而來除去。在有些實施例中，不同 26 1265981 47(a)〜7(d)圖所示之例，該蝴阻罩可被製僅成能容許 入德構的某_部份，而阻止㈣劑達到該結構的 另一部份。 /第10(a)圖的製法由操作工開始，以標號242來表示。操 作1係用來製成多數層而達成三個結果：⑴一所需結構會由 至少:結構材料來形成；⑺一犧牲支撐結構會由至少一犧 牲材料來形成；及(3)一钱刻阻罩係由一阻罩材料所製成， 而該阻罩包含一可去除元件且亦可包含一永久結構元件。 在操作1完成之後，該製程會移至操作2，即244，其係 10用來選擇地添加任何其它所需的_阻罩元件。該等阻罩 —牛可被α在所需位置，並以任何適當方法來固持於定 、例如黏接，壓力，扣持夾等。該等添加的阻罩元件可 為導電材料或介電材料，硬質材料，或可順變材料。 在操作2完成之後，該製程會移至操作3，即246，其係 15 2來進彳Τ-或多次蝴操作，其可能會或者不會與各種所 需的中間操作互相混合。該製程騎會由操作3移至操作*， 即248，其係用來除去至少一蝕刻阻罩。 在操作4完成後，該製程會移至操作5，即25〇，其係用 來進行-或多次添加的餘刻操作，它們可能會或者不會與 20其它的操作互相混合。操作5的完成將會使該所需結構與犧 牲材料元全釋離，或若尚未完全釋離，則該製程將會繞回 操作2(244)或操作4(248)。 第10(b)圖示出第五組實施例的製程方塊圖，其中亦會 使用-蝕刻阻罩，但該阻罩並不固接於結構材料或基材， 27 1265981 =不以可容易去除的方式來固接於該結構材料或基材。該 等^接物-般係為微小的細構，而會被用來抑止阻罩材料 u釋離，直到其要被安全地除去為止。或者，該等細 小的固接結構能夠確保該钱刻阻罩的移動不會負面地影響 5其它的钱刻操作。該等細小固接結構之例可為非常地薄之 直L伸的網狀或柱狀結構，該阻罩材料的釋卸乃 ^藉固持靖料並突_㈣碎的㈣崎元件而來完成。 元件亦可能以—電流通過它們而來破壞，或它們亦 10 或ιΓ控的#㈣作來除掉’祕刻龍攻擊阻罩材料， 攻擊該所需結構及該崎材制©接元件，但最好 害能夠在所需結構產生受的損 15 材顺製成其包含至少—結構 ·===成其包含至少-犧牲材料； 不固接於所需結構，亦不以：軍材料來製成’且該阻罩既 需結構。 、"谷易除去的方法來固接於該所 2〇 該製程會由操作1移至操 _罩:二=_，其係用來除去至少-除將會在先前被該㈣作3㈣刻。該a軍的去 操作4的完成代表該心二域中令其姓刻大為增強。 而'、.口構與犧牲材料的完全釋離，或其 28 1265981 亦可代表達到-過渡狀態，該製程會由此繞回操作a或以一 不同的方式來進行。在某些實施例中，操作3將會中止，而 來進行-不同的操作(例⑽—介電質來充填被刻區域)。 第10⑷與1〇(b)圖之製法實施例係可使用於多種情 5況。某些該等情況可包括如需要將介電材料或其它渗透材 料設在所擇位置，而仍需保持至少某些犧牲材料於定位， 俾使-結構的不同部份在它們被一滲透材料鎖固於定位之 前能夠避免相對移動。 某些電化學製造的裝置和結構必須或最好以介電質或 10其它材料來作為該結構的一部份，或需要使它們的元件互 相保持一特定的幾何關係（如所設計者），而不會被應力，慣 性力，熱效應等所破壞。在某些情況下可能需要使用另一 種結構材料來限制由主要結構材料所製成元件的移動。除 了這些效ϋ以外，在某些實施例中，其亦可能在製造時不 15想要將一第二或第三種結構材料參入於一疊層基底上。 使用如Brown等人於2002年12月3日申請之No. 10/309521美國專利申請案，名稱為“微小Rj7和微波構件及 用來製造該等構件的方法，，並公開於US 2003-0222738 A1 案；及Brown等人於2003年6月27曰申請之Νο·10/607931美 20國專利申請案，名稱為“微小RF和微波構件及用來製造該等 構件的方法”等案中所揭的電化學製法製成的RF同軸構件 即可k供各裝置例，其能由部份触刻、摩透、完全姓刻， 及可能又另一滲透等之組合來獲得效益。該等裝置（例如同 軸裝置）可因一介電（或其它）材料填充於中心導體與外罩之 29 1265981 間的空間内，而在性能或特性上得到利益，因為它們可能 由於細薄且支撐不足的中心導體接觸到外罩而造成短路， 致使该裝置不能使用。事實上，即使沒有發生接觸，但若 該中心導體與外罩之間的間隙未被如此設計，則其性能亦 5 可能會受損。 10 15 20 .弟11圖示出結構.類似於前述No.10/309521及 10/607931二美國專獅請案所述的某些同軸裝置，但加以 簡化來作說明。在第結構藉除去犧牲材料來釋出之 後，理論上即可注人—介電材料。此注人可藉將介電材料 由該結構之1放端或餘刻孔314等注人，再滲人中心導體 320與外罩302之間的間隙内而來達成。或者，該注入亦可 將該結構置人—真空室中，独—可流動材料包覆該結 構，然後將-氣體充入該真空室内，俾使該可流動材料迫 入該外罩的開孔内而來完成。料，若中心、導體已移離其 所而位置’則再庄人介電材料亦並不能改善此情況。 第1〇⑷圖的製法可用來確保該結構能被妥當地製成。 猎著以二階段綠刻如第u_示的結構，翁可以在第 一階段時，即在繼續進杆笛一 丁弟一P白段的蝕刻之前，將一新材 料(例如介電質）注人至少—部份被⑽m域中。B之 第11圖的同軸裝置之例中，° ^ 甲s亥中心導體320位於該裝置之兩 、父叉處的部份，若料又點能保持在其預定位置將會充 分受益。故，在本例中，异 對於另-部份的位置（例如^能穩定化該結構的一部份相 Μ中心導體32〇的位置相對於靠 k«置之兩臂交又點的外罩302位置），而在最後钱刻之 30 1265981 =將介電材料注人巾心導體與在—所需區域的外罩之間。 ；'；^所殘留的犧牲材料將會被餘掉，且若有需要，則更 夕的介電質將可被添加注入該外罩320與中心導體之間的 /、餘區域中，或甚至可能除了中心導體與外罩接觸區以外 5 會包封該整個結構。 種較佳的方式乃被例示於第12(a)〜12(e)圖中。在第 12(a)圖中，該同軸元件之—部份的平面係由頂視圖來示 出，其中該平面係被選成會交叉中心導體332(第u圖之％… 的平面，以及蝕刻和滲透孔326(第n圖中之314)等，並有一 1〇犧牲材料334會填滿該中心導體332與導電外罩338(第11圖 中的3〇2)之間的空間。在某些實施例中，該犧牲材料亦會 被製没在該外罩外部。於第12(b)圖中，該同軸元件内部之 一區域342係被示出已被蝕掉，而留下一些犧牲材料保 持於原位來穩^該中心導體；332,以避免其移蚊位。嗣該 15蝕空區域342會被填滿一介電材料344，如第12((：)圖所示。 由於該介電材料344現已能固定中心導體332，故現已能蝕 掉剩餘的犧牲材料334，而留下開放的内部姓空區域和 348,如第12(d)圖所示。最後，若有需要，則該等蝕空區域 346，348等亦能以相同或不同的介電質344來填滿，如第 20 12(e)圖所示。 在第12(a)〜12(e)圖中所例示的蝕刻及滲透法能以不 同的方式來達成。例如，該等方法係以二或更多階段來進 行蝕刻。 一蝕刻及滲透實施例的第一例乃以第13和14(心與14(b) 31 1265981 圖來u在此例中’ _不要㈣之完全罩蔽的選擇區域 (除了該轉本身内部料)將會被提供，因此㈣僅會發生 在未罩蚊區域中。㈣會進行姓刻。在切步钱刻完成後，即 ㊁…亍〜透而將’丨電材料提供至—所需區域。嗣該阻罩會 5 ^被部份除去，然後會㈣原來被罩蔽的區域，且若有 而要將對韻轉蔽區域進行介電質滲透填補。更詳言 之:在本例中，該阻罩包括-永久結構，其係該所需結構 的-部份，-永久結構並非原設計或所需功能的一部份， 但係為製程的方便而被加入者，惟一暫時性的罩蔽結構會 10在使用之後被除去。 首先有-要被優先姓刻的所擇煙自區350(例如交叉區 會被-由結構材料製成的煙自結構348所包圍。該煙自結構 348係與所需結構來-起電化學製成，而其與該煙自皆能在 扣圖中被看到。該煙自區更可由—片結構材料356來界 15疋，其可見於第14⑷圖中。該料片可被製成如該結構的一 層（例其可被稱為-暫時層），或其亦可在料層形成之後再加 諸於該結構。該料片具有—開孔位於該煙自區350上。該煙 自區會被優絲刻，而該煙自結構和該料片會罩蔽其它位 置的犧牲材料，並形如1虫刻播止物。第14⑻圖示出該暫 時層設在第的結構上，而該整個結構包括犧牲材料則 被不如可部份透視的。該料片（即暫時層）係如同任何層地來 製成’並可被黏接於該煙自結構的側壁，直到在嗣後的操 作中被平坦化磨掉或者去除為止。 卞 然後一控制時間的餘刻會在第i 4 (a)圖的結構上來進 32 1265981 的_孔3_。若;二輕·會進人該外罩側邊 5 10 =ΖΓ以外的—些殘留犧牲材料將會保持在原位 能二内：體固持於定位。第，)圖係示出該製程的狀 心/、中*亥板片係被示為不透明的。 嗣一介電質會被經由該等敍刻孔來至少注入該中 體和外罩之間。該介電質亦可選擇性地填滿該煙自區域。 此餘刻和滲透操作能在_電化學製造I置中來進行，其含 有一適當的蝕刻站和滲透站。 己 嗣。亥先別製成的暫時層會被去除或磨除。此去除乃 可例如藉平坦化譬如拋光來完成。或者，此去除亦可藉匈 刻來完成，該钱刻劑僅會攻擊該板片，而不會攻擊該介電 質或製成所要結構的材料。在該板片與所要結構的材料之 15間的選擇性，係可為該板片使用不同材料及使用對該材料 具有選擇性之钱刻劑的結果，或者由於犧牲材料分開該板 片和結構材料，因此钱刻劑不能達到該結構材料所致。該 板片去除後會使該結構回復如第13圖所示的開放狀態，只 是其交叉區域及可能包括該煙自區會被填滿一介電質。 2〇 '然後’其餘的犧牲材料會被餘掉。此可在該結構已由 -電化學製造機器上被卸除之後才來進行(例如若該機器 係被用來製造該裂置）’或亦可在該機器中來完成。若有需 要亦可進行附加的滲透填補。 蝕刻與滲透實施例的第二例係以第15，16及17(勾圖 33 1265981 來說明。在本例中將會提供不完全的阻罩（⑼會完全阻播 餘刻劑進人的阻障)於某麵域中，以減緩__⑽# 刻’而使在罩蔽區域與非罩蔽區域之間能達到不同的钱刻 速率。更詳言之’在本例中，阻罩並不黏接於會保留作為 5該結構的一部份之結構材料，且它們亦不黏接於基材。在 本例中的阻罩會被犧牲材料所包圍，而當所有包_犧牲 材料被㈣之後’該等料即能被除去或相結構掉落(例 如若該結構係被倒置地姓刻），因此可在原先軍蔽區内造成 -有差別的侧。由於阻障的延滞，_刻將僅能在某竣 10區域巾完全達成’而在其它區域巾不完全達成。該初步妙 刻嗣可被中止，而該結構的清理、滲透會在所擇區域内來 進行(例如在已完絲刻的區域中），㈣刻又會再啟動，真 持續至所有區域皆已完全姓刻為止，然後若有需要料進 行後續的滲透操作。又在其它實施例中，二次以上的餘刻 i5 F皆段亦可被用來與二或更多的滲透操作結合。 在某些實施例中，該等阻障可用來形成加長的餘刻通 這’而令姓刻劑必須循之運行方能達到一所需的钱刻位置 (即則會因該增長的通道而會延缓）。在其它實施例中，鈔 刻岐緩亦可不如此大部份依靠路徑的延長，而是依靠縮 2 〇 =、箱刻劑必須通過才能接近所需敍刻區的開孔尺寸而來 、、（Ρ餘刻會由於縮小流路截面而減緩)。又在其它實施制 二=的延緩係依靠上述兩種不同方法之更均衡組舍 辟 。在有些實施例中，蝕刻阻障可具有完全實心的 d 4僅旎繞著該等阻障的周邊來運作以除去該膊 34 1265981 障，而在其它實施例中，該等壁可被穿孔而具有孔洞，因 此蝕刻劑將能以一較短路徑的方式來除掉該阻障。 在-第二種方法中，姓刻阻障係可與該裝置一起地製 成，其能大為減緩該裝置在二臂交又處之㈣區域⑽ 5刻。最後，這些阻障會變成完全釋離，而可由兮梦詈…本^、 掉落）。此第二種方法的優點係不需要平垣化或^它㈣來 除去該暫時層，其乃為第一種方法所必須者。因此，將能 較容易在製造該結構的電化學製造機器外部來進行整個釋 離與滲透製程。 10 第15，16及17⑷圖不出—RF構件，其係類似於11圖所 示者，但亦使用-如第！2, 13，14⑷與鄉)圖中所示的煙 自結構，有一蝕刻阻障362會被用來近乎但不完全地包圍該 構件的所擇部份。在此例中，該蝕刻阻障362會包圍該構件 的四個支臂’而留下該四臂的交叉區域保持開放，因此該 15中央區域會更直接曝露於蝕刻劑。在有阻障存在之處，蝕 刻劑於能進入該外導體側邊的孔洞之前，必須先餘掉在古亥 阻障與罩體外表面之間的材料，然後才能開始往内移至中 心導體。在第一階段的蝕刻被定時或控制地來除去該交叉 區域處之中心導體與罩體間的材料之後，介電質即可被注 2〇入該中央區域，然後再繼續蝕刻直到所有的犧牲材料被除 去為止。在該蝕刻的某一時點，該等阻障將會釋離，且可 掉落(假設蝕刻係倒置來進行），或者被除去。由於該嗖叶中 蝕刻孔僅設在該同軸裝置的側壁上，故該等蝕刻阻障的頂 部亦可被省略，因此僅需要二垂直壁，而此將會知速它們 35 1265981 與該裝置的分離。 :=_臂的端部，其中可看到一中心_ 0禾糕其係被該同軸線的 有钱刻孔374等，其不所包圍，該外導體含 5 10 15 20 材料被除去；且衫能^放除非沿該通道挪的犧牲 被卸除 外導體372之間的所有儀/ 進入’除非在該阻障382與 …… 彳犧牲材料全部被除去，且該阻障382 弟17(b)圖示出一同輛 體392填滿叫_ ^包卜中心導體390與外導 以及包圍的阻障394和398。該等阻 早5 —起會形成—達到開孔382的姓刻通道396’苴合 比弟17刚所示者更為延長甚多。在某些實施例中，料 添加的延遲對確保該交又區内之材料的完全㈣可能是必 要或較佳的。 第18⑷和姆)圖示出二組不同實施例的方塊圖，1皆 使用^段糊操作來由-設在-基材上的多層結構財 m .又在通㈣的犧牲材料，且縣材本身亦為—犧牲材 料及/或* m接於該多層結構而含有—犧牲材料(例如設 中）的構件來鱗犧牲材料。此等實施例能被使用於 夕1*月况合以據第18(&)圖之製法的實施例，當相較於由 多層結構除去犧牲材料需要更大量的時間來由基材或其它 樽件除去犧牲材料時，則可絲使鮮層結構曝露於钱刻 制的日』$減至最少。相同的狀況亦適用於第18(b)圖之製 法的實施例。 第18(a)圖的製法係 以操作1開始，即402 ,其係用來由 36 1265981 數層製成-結構，而該結構係製設在一基材上其具有要被 钮刻的材料，或被固接於—構件其含有要被姓刻的材料。 該各層&含—所需造型的結構係由至少一結構材料所製 成，且亦包含一犧牲支撐結構係由至少一犧牲材料所製成。 5。找結構製成之後，或正在製造之時，該製程會移至 操作2’即404。該操作2係用來製成—阻障元件，其可與操 作1 一起進行，或在操作1完成之後才進行。 該製程會由操作2移至操作3，即概。該操作3係進行 —或多次_操作，且這些_操作可能㈣沒有被中門 10操作所分開，而該等钱刻操作會由該基材或構件來除去^ 少部份的犧牲材料。 在操作3之後，該製程會移至操作4，其係用來除去至 少—钱刻阻障，該阻障會至少部份地保護製成該多層結構 的材料。 15 該製程會由操作4移至操作5,即。該操作5係用來 進行-或多次添加的餘刻操作，而由該多層結構的許多層 除去犧牲材料，且該各姓刻操作係可有或沒有被進行二 操作來分開。 θ 第18(b)圖的製法係類似於第18⑷圖，但有一些微小 力變化。雖第18⑷圖的操作咖來製成保護多層結構材料的 钱刻阻障，但第剛圖的操作2則用來製成保護該基材或構 件免遭一蝕刻劑初步攻擊的阻障。 第l8(a)的操作3係類似於第ls⑷圖的操作$，直中备進 行餘刻操絲餘成該多層結構料Μ層除去犧^才 37 1265981 料 障 第18(a)與18(b)圖的操作4係為類同皆用來除去蝕刻阻 5 10 15 20 第18(b)圖的操作5則類似於第18(>)圖的操作3，係用來 進行一或多次蝕刻操作俾由該基材或構件除去材料。 在此二組實施例中，其第五操作皆可令該結構及基材 或構件由該犧牲材料釋出，或該等操作可再接續附加操作 而來完成該製程。 應請瞭解第18(a)圖的操作5不僅只由多數料層鱗犧 牲材料’其亦可包括由該基材或構件飿掉犧牲材料。同樣 地’第18⑻圖的操作5並不僅限於由該基材或構件除去犧牲 材料，並亦可包括由組成該結構的多數料層來除去 犧牲材料。 八 -依據第18(a)圖之製法的實施例係示於第19⑷〜 圖中。 第19⑷圖示出一多層結構松設在一基材伙上，而該 基材包含-通道456填滿一犧牲材料術。該多層結構极包 3犧牲材料462的區域及結構材料蝴的區域。雖然最好能 用單-操作來對第19_巾的犧牲材料軸以獲得第啊 :中的結構，但似不大可能。若需要一較長的時間來由該 I逼456除去犧牲㈣’雜使在此整段時㈣令該多層社 =曝露於_劑，則可能會嚴重損害該結構材料464或^ 面〜口此’在某些情況下，其可能最好不要於單一操作 由弟19⑷圖所示的狀態直接跳至第19⑷圖的狀態。所 38 1265981 以，在本實施例中將會進行多個操作來達到第19〇)圖所示 的最後結果。 在第19(b)圖中’有一阻罩廣472會被添加於該多層結構 上。此阻罩層可由結構材料或一不同的材料來製成。此阻 5 罩層係欲用來阻止去除該通道456之犧牲树料的钱刻劑達 到該結構材料464。如所示，此阻罩層會被設成緊鄰該纟士構 的最末層，或者，該阻罩曾除了連接於該結構材料之一外 環的部分以外，皆會被一或多層的犧牲材料來與該所需結 構隔開。在該阻罩層472設定之後，一蝕刻劑即會施加於該 10組合的多層結構、基材、和阻罩層，故該蝕刻劑會攻擊位 於通道456内的犧牲材料462。此姓刻會持續一段時門而 使該通道内幾乎或完全沒有犧牲材料。 戈口乐圖所示 u ’’T a :¾留在該通 道内靠近該多層結構的第一層之處。在該初步姓刻之後， 15該通道456已大致被清除乾淨，嗣該阻罩層472會被去除， 如第19(d)圖所示。該阻罩層的去除可藉—平坦化或餘^ 作來進行’惟該適當祕刻顧能優先除去触I層材: 而不會損及該結構材料，或該結構材料需被以—足:痒 的犧牲材料來與該阻罩材料分開。 W予又 20㈣，—用來除去犧牲材料的钮刻劑會被施加， 頂層^下除去該多層結構的犧牲材料，同時會繼 過該基材的通道，以使該通道和多層 、牙 丨:除’而令該結構材料464曝露於該峨惰 39 1265981 如此形成的蝕刻結構、部段、構件或裝置係示於第19(e) 囷中/、側J可以或者不必與最終結構一起保留，且若有 需要則可被除去，例如在最後的蝕刻操作之前或之後切割 去除。 10 15 20 專業人士將可瞭解，於此所述的方法並不限制於所述 的形狀或裝置’而能應用於多種需要進行多階段钱刻的情 況不卿疋否為了加入一添加材料(例如欲穩定一結構），戒 為了保濩一特定的材料或造型，以免曝露於蝕刻劑比達到 5亥預期目的所需者更多的時間。專業人士亦可瞭解，上述 製法的許多變化例亦可能包括例如操作數目的改變，各操 作参數的改變，㈣劑的改變，用來形成-指定之多層姑 構或其一部份之所擇的實際製法之變化等等。 各種的變化實施例亦有可能，例如在二犧牲材料之間 的I^P早可大致順應於所需結構的形狀，或若較為有利則其 亦可採用某些其它的複雜形狀。在某些變化例中，並非所 :的蝕刻阻障皆會完全地包圍一所需的多層結構，其中某 二餘刻劑可以接觸該多層結構的某些區域，而不能接觸具 =不同μ構材制其它區域。二、三或更多雜作亦可被 各括。多種結構材料亦可被使用。在另外的變化例中，並 、、斤有的材料皆必須與該基材接觸，且並非所有的材料皆 义I全包圍其它㈣。在有些實施财，㈣操作可使 用化子_#丨來完成，而在其它實施例中，則可能進行電 化學蝕刻操作。 ^ 本發明之各種實施例的各種多階段餘刻操作得因各種 40 1265981 理由而來進行。例如 形成於—丘同A °〆寺理由包括但不限於⑴可使同時 =層_，能非常易碎受可容 5不良反•而在所需的多層結構曝露之文η才料 劑;⑶當該所需_結構曝露— 多V结構的=:j:間;及(4)可使-•議觸該所需 : °卩份而來除去—種犧牲材料，但不能接觸 W層結構的另_部份，俾免其損及在 10牲材料。 且w乐一種犧 如下表所列的專利申請案和專利案的内容併此附送提 供Γ考。在所附送各案中所揭的技術能與本申請案的技術 以§ 午多方式來組合：例如’用以製成結構物的更佳方法可 由某些該等技術的衫來獲得，加_結構亦可被製成， 15更佳的裝置亦能被製成耸笠。 -----— •美國專利申請案，申請曰 •美國專利申請公開案號，公開曰 發明人，名稱 • 09/493,496-2001.01.28 Cohen，“電化學製造的方法” • 10/677,556-2003.10.01 Cohen等人’“含有可承接構件之對準及 • 10/830,262-2004.04.21 ’ 1^少電化學製造的3D結構 中之層間不連續性的方法” • 2004.05.07 (Docket P-US099 -A-MF) kckard等人，“使用黏接罩，配合介電 片及/或晶種層而可藉平坦化來部份去 除之電化學製造結構的方法，， • 10/271,574-2002.10.15 • 2003-0127336A1-2003.07.10 Cohen等人，“用來製造高縱橫比之微機 電結構的方法及裝置’’ • 10/697,597-2002.12.20 — " —------- Lockard等人，“包含噴佈金屬或粉末塗 覆製程的EFAB方法及裝置” 41 • 10/677,498-200310.01 罩來製造 • 10/724,513-2003.11.26 罩制絲造观 • 10/607,931-2003.06.27 微波構件及用來 • 2004.05.07 (Docket P-US093-A-MF) Cohen專人’包括使用表面處理減， • 10/387,958-2003.03.13 • 2003-022168-A-2003.12.04 談冓的用 • 10/434,494-2003.05.07 • 2004-0000489-A-2004.01.01 作 • 10/434,289-2003.05.07 • 20040065555A-2004.04.08 Gang Zhang ’ “利用一基材的定位陰極 化之可順形接觸罩鍍法及裝 • 10/434,294-2003.05.07 • 20040065550A-2004.04.08 為有強她尤積處理的電 • 10/434,295-2003.05.07 • 2004-0004001A-2004.01.08 等人，“用來製造與半導體類電 整合之3D結構的方法及裝置：㈣4 • 10/434,315-2003.05.07 • 2003-0234179A-2003.12.25 Christopher A· Bang，“使用犧牲全屬 i 案來成形結制綠及裝 • 10/434,103-2004.05.07 • 2004-0020782A-2004.02.05 Coher^t ’ “電化學製造的密封微結 及用來製造該等結構的方法和裝置，， • 2004.05.07 (Docket P-US104-A-MF Tompson，“具有介電或主動 學t造，f吉構及用來製造該結 和裝置” • 10/434,519-2003.05.07 • 2004-0007470A-2004.01.15 Smalley，藉由互登層或選擇性麵岁丨 ㈣5補來電化學製造結 • 10/724,515-2003.11.26 Cohen，“包含接觸罩與基材 接之用來電化學製造結構的方法Γ订配 • 2004.05.07 (Docket P-US105 -A-MF §ΪΪ，，“用於電化學製造結構的多 • 60/533,947-2003.12.31 Kumar，“用來標記的探針陣列和方 ----- 1265981 本發明尚存有其它各種實施例。有些該等實施例係依 42 1265981 據本文的技術與附件之各種技術的組合。有些實施例可能 未使用任何覆面沈積及/或平坦化製程。某些實施例可能包 括在一或多層上之多種不同材料的選擇性沈積。有些實施 例可能使用非電沈積的覆面沈積製法。有些實施例會用鎳 5作為結構材料，而丨它實施例可能使用不同的材料，例如 金、銀、銅、辞、錫，或其它能與一犧牲材料分開的可電 沈積材料。有些實施例可能用銅作為犧牲材料，而有些實 施例則可能使用銀、辞、錫或其它材料。有些實施例會使 用一鎳的結構材料及一銅的犧牲材料，其可使用一氯化鈉 10和氫氧化銨為基礎的蝕刻劑，例如由New Haven，CT•的Haven, CT. Enthone C-38. The gentleman's second can be selected from New and can not be selected to attack the sacrificial material (such as copper). 5 10 15 20 The side materials of the structural material do not have to have the same choice difference process = slight damage to the sacrificial material is not large Obstruction, as long as the _ _ = material (four) agent is removed, it will not cause the secret agent to unexpectedly reach the body = body. Finding the money for each stage of the _ method is exemplified = 7 (8) ~ 7 (4). 7__ shows the stage after the outer sacrificial material is finely removed, the 7th (4) shows the stage after the mask is removed, and the 7th (4) shows the final stage, wherein the desired structure 202 has been made of the sacrificial material 2 〇 4 released. In some variant embodiments, multiple barrier layers can also be used. In some examples, the sacrificial material may be, for example, nickel, and the structural material may be copper. The 乂^ and ^ such as a stripping agent can also be used. Please note that the Μ-7 stripping agent will attack the copper, so it is best to make sure that the stripping agent does not reach some parts of the desired structure more quickly (as compared to the other that reaches the structure) hurt). In the fourth embodiment, the use of a conformable mask, or at least a portion of the inner surface capable of conforming to the desired structural surface, may result in a more uniform engraving time, thereby reducing damage. The risk of the required structure. Examples 8(a) to 8(c) illustrate an example in which two different sacrificial materials are used together with a structural material. In this process, a stop point is still reached in the etched ruthenium, and the number of etching operations is reduced to two instead of three times in the embodiment shown in Figures 7(a) to 7(d). It may also make the external sacrificial material the same as the structural village material. In the 8th (a) towel, a desired multi-layer structure 202, the skin sacrificial material 204 is completely surrounded (except for the portion of the contact with the substrate 214 24 1265981), the first sacrificial material 2G4 will It is surrounded by the second sacrificial material (except for the part it is in contact with the substrate). A first surname will be used to remove the second sacrificial material 212, and a second (four) will be used to remove the first sacrificial material. In various embodiments, the desired layer formation process will be Before the operation, at the time of the material__, or after the etching operation. 10 15 In some embodiments, the inner surface of the second sacrificial material 212 and the outer surface of the first sacrificial material 204 are compliant or partially conformable to the surface of the desired structure to be used to remove the first sacrifice. The time of the material can be more accurate. In some implementations, the profile analysis of the shaft material can be used to obtain the interface shape of the first and second sacrificial materials, which can achieve a certain degree of homogeneity (ie, removing the sacrificial material). The structure is required to be exposed to all or most of the surface at about the same time. If the shape is different - the surface can be at least partially due to - or a plurality of shapes It is caused by the underlying rate factor, for example, in some areas, the surname path X limit 'or the axial flow is limited, or (4) becomes saturated trend and so on. 9(a) to 9(c) illustrate an example in which the multilayer structure 2〇2 required for _ has a shelter 203 or the like. Such madness is shown as a very thin "flow bar," and consists of two materials that are identical to structure 202. These peeks may be improperly fixed to the substrate or formed first. Improperly disposed CC cover or the underlying material of the bonded cover material may be referred to as "burr" or may be caused by the structural material that is flattened in the sacrificial material. May be called "broken", or caused by structural material 25 1265981 that is plated in the crack of the sacrificial material (this phenomenon can be called "color ribbon", which typically produces (four) extension and on one side The size is elongated but in a structure with a very thin lateral dimension.) - The first-in-one operation removes the sacrificial material 2{34, as shown by the f9 cap, but leaves the city. Because the #瑕_(10), therefore, the side material 5 of the structural material can be removed from the sound, and (4) the damage will be caused to the required part of the lion 2, as shown in paragraph 9(e)_. If the secretary is used to transfer such The Susu will also attack the structure 202, and it is important to control the time of the money. To strengthen the control, the chosen surname can be diluted to make Use (ie, the concentration of the surname can be less than the recommended or generally known amount, such as 5〇%, 25%, township, 10 or even lower than the recommended concentration range), or at the subnormal temperature Used down (ie, the temperature is lower than the recommended or commonly used temperature of the remnant, such as helium, 1CTC, 2Gt: 'or a much lower temperature than this recommended temperature range. Figure 10(a) shows the fourth group A block diagram of an embodiment. In this set of embodiments, as in the case of Figure 7(a) 7(d), a mask can be made of a mask material, which can be the same as - the sacrifice The material may be different, and the resist material may be selected according to the requirement, that is, the sacrificial material can be (10) not worn by the mask material, although in some embodiments the residual agent may damage the mask. Materials are also acceptable. In some embodiments of the group, the barrier can form a permanent portion of a structural component, even if the shape is not part of a deliberate design. The shape of the barrier material does not adversely affect the availability of the intended structure. In some such embodiments, The barrier material may include a removable component and an element that will become a permanent portion of the structure. In some such embodiments, the removable portion of the barrier may be, for example, operated by a surname, planarized. Removal by operation, or other processing operations. In some embodiments, different from the example of 26 1265981 47(a) to 7(d), the butterfly mask can be made to allow only a certain part, and the (four) agent is prevented from reaching another part of the structure. / The method of drawing 10(a) is started by the operator and is indicated by the numeral 242. The operation 1 is used to make the majority layer and achieve three Results: (1) a desired structure is formed by at least: a structural material; (7) a sacrificial support structure is formed of at least one sacrificial material; and (3) a mask is made of a barrier material, The mask comprises a removable component and may also comprise a permanent structural component. After operation 1 is completed, the process moves to operation 2, 244, which is used to selectively add any other desired _block elements. The barriers - the cows can be held at the desired location by the alpha and held in any suitable manner, such as by adhesion, pressure, holding clips, and the like. The added barrier elements can be electrically conductive or dielectric materials, hard materials, or compliant materials. After operation 2 is completed, the process moves to operation 3, i.e., 246, which is a 15-2 input or multiple butterfly operation that may or may not be intermixed with various desired intermediate operations. The process ride is moved from operation 3 to operation*, 248, which is used to remove at least one etch stop. After operation 4 is completed, the process moves to operation 5, which is 25 〇, which is used for - or multiple additions of the remaining operations, which may or may not be intermixed with the other 20 operations. Completion of operation 5 will completely release the desired structure from the sacrificial material element, or if not fully released, the process will wrap back to operation 2 (244) or operation 4 (248). Figure 10(b) shows a process block diagram of the fifth group of embodiments, in which an etch mask is also used, but the mask is not fixed to the structural material or substrate, 27 1265981 = not easily removable The way to secure the structural material or substrate. These connectors are generally finely structured and will be used to inhibit the release of the barrier material u until it is safely removed. Alternatively, the fine attachment structure can ensure that the movement of the mask does not negatively affect the other money-cutting operations. The example of the finely-fixed structure may be a very thin straight-lined mesh or columnar structure, and the release of the barrier material is accomplished by holding the material and forming a (four) broken (four) element. . The components may also be destroyed by the passage of currents, or they may be removed by #10 or ιΓ (#) to remove the 'secret dragon attack mask material, attacking the desired structure and the fumigate component, but It is best to produce a damaged material in the desired structure. The material comprises at least - structure · = = = as it contains at least - sacrificial material; is not fixed to the desired structure, nor is it made of: military material And the mask requires both structure. , " Gu Yi removal method to fix the 2 〇 process will be moved from operation 1 to operation _ cover: two = _, which is used to remove at least - except that will be previously used by the (four) for 3 (four) . The completion of the operation of the a military 4 represents the enhancement of the surname of the heart. and',. The complete release of the mouth structure from the sacrificial material, or its 28 1265981, may also represent an up-transition state, whereby the process may be bypassed to operation a or in a different manner. In some embodiments, operation 3 will be aborted, and a different operation (example (10) - dielectric to fill the engraved area) will be performed. The embodiment of the method of Figures 10(4) and 1(b) can be used in a variety of situations. Some of these conditions may include, if desired, placing a dielectric material or other permeable material in a selected location while still maintaining at least some of the sacrificial material in place, such that different portions of the structure are locked by a permeable material Relative movement can be avoided before positioning. Certain electrochemically fabricated devices and structures must or preferably have a dielectric or other material as part of the structure, or require that their components maintain a particular geometric relationship to one another (as designed). It will not be damaged by stress, inertial force, thermal effect, etc. In some cases it may be desirable to use another structural material to limit the movement of the components made from the primary structural material. In addition to these effects, in some embodiments, it is also possible to incorporate a second or third structural material into a laminated substrate at the time of manufacture. Use No. as claimed by Brown et al. on December 3, 2002.  U.S. Patent Application Serial No. 10/309,521, entitled "Small Rj7 and Microwave Components and Methods for Making Such Components, and disclosed in US 2003-0222738 A1; and Brown et al., filed June 27, 2003 Νο·10/607931 US 20 patent application, the name of the "micro RF and microwave components and methods used to manufacture these components" and other methods of the RF coaxial components made by the electrochemical method can be used for each An example of a device that can benefit from a combination of partial engraving, rubbing, full surname, and possibly another infiltration, etc. These devices (eg, coaxial devices) can be filled with a dielectric (or other) material. In the space between the center conductor and the cover 29 1265981, there is a benefit in performance or characteristics, because they may cause a short circuit due to the thin and under-supported center conductor contacting the cover, rendering the device unusable. In fact, Even if no contact occurs, if the gap between the center conductor and the cover is not so designed, its performance may be impaired. Brother 11 shows the structure. Similar to the aforementioned No. Some of the coaxial devices described in the US lions, 10/309521 and 10/607931, are simplified for illustration. After the structure is released by removing the sacrificial material, it is theoretically possible to inject a dielectric material. The injection can be achieved by injecting a dielectric material from the first or the remaining holes 314 of the structure, and then infiltrating into the gap between the center conductor 320 and the outer cover 302. Alternatively, the implanting may also place the structure in a vacuum chamber, the mono-flowable material encasing the structure, and then filling the gas into the vacuum chamber to force the flowable material into the opening of the housing And to finish. Material, if the center and conductor have moved away from their location, then the remanufactured dielectric material does not improve the situation. The method of Figure 1(4) can be used to ensure that the structure can be properly made. Hunting with a two-stage green engraving as shown in the u_, Weng can put a new material (such as dielectric) in the first stage, that is, before continuing to etch into the flute, Dingdi, and P white segments. Note that at least - part of the (10) m domain. In the example of the coaxial device of Fig. 11 of Fig. 11, the center of the central conductor 320 of the device is located at the two parts of the device and at the parent fork, and it would be beneficial if the material can remain at its predetermined position. Therefore, in this example, the position of the other part (for example, the position of the center conductor 32 能 which can stabilize the part of the structure relative to the outer cover 302 which is placed between the two arms by the k« Position), and at the end of the money engraved 30 1265981 = the dielectric material is injected between the heart conductor and the cover of the desired area. The remaining sacrificial material will be left over, and if necessary, the dielectric will be added to the /, the remaining area between the outer cover 320 and the center conductor, or even possible In addition to the center conductor and the cover contact area 5 will enclose the entire structure. A preferred embodiment is illustrated in Figures 12(a) through 12(e). In Fig. 12(a), the plane of the portion of the coaxial element is shown in a top view, wherein the plane is selected to intersect the center conductor 332 (the plane of the ... of the U, and the etching) And a permeation hole 326 (314 in the nth figure), etc., and a 1 〇 sacrificial material 334 fills the space between the center conductor 332 and the conductive outer cover 338 (3〇2 in Fig. 11). In an embodiment, the sacrificial material is also formed outside the housing. In Figure 12(b), a region 342 of the interior of the coaxial component is shown to have been etched away leaving some sacrificial material to remain The central conductor is stabilized in situ; 332 to avoid its mosquito removal position. The 15 etched region 342 is filled with a dielectric material 344 as shown in Fig. 12 ((:). The electrically conductive material 344 is now able to secure the center conductor 332 so that the remaining sacrificial material 334 can now be etched away, leaving an open internal surname area and 348, as shown in Figure 12(d). Finally, if needed The etched areas 346, 348, etc. can also be filled with the same or different dielectrics 344, as shown in Figure 20(e). In Figures 12(a) through 12(e) The etching and osmosis methods exemplified in the present invention can be achieved in different ways. For example, the methods are etched in two or more stages. The first example of an etch and etch embodiment is at 13 and 14 (heart) With 14(b) 31 1265981, in this case, the selected area of ' _ not (four) is completely covered (except for the internal material of the turn itself) will be provided, so (d) will only occur in the uncovered area. (4) The name will be engraved. After the completion of the cut, the second...亍~ will provide the 'electrical material to the required area. 嗣The mask will be partially removed, then (4) the original cover The area to be covered, and if so, the dielectric transmissive area is filled with dielectric permeation. More specifically: in this example, the mask includes a permanent structure that is part of the desired structure. , - The permanent structure is not part of the original design or required function, but is added to the convenience of the process, the only temporary cover structure will be removed after use. First of all - to be prioritized The selected smoke from the zone 350 (eg, the intersection zone will be - the smoke from the structural material 348 Surrounding. The smoke is made from the structure 348 and electrochemically made with the desired structure, and the smoke can be seen in the buckle map. The smoke from the zone can be bounded by the sheet structure material 356. That is, it can be seen in Figure 14(4). The web can be made into a layer such as this structure (which may be referred to as a temporary layer), or it may be applied to the structure after the layer is formed. The web has an opening in the smoke from the zone 350. The smoke is automatically inscribed by the zone, and the smoke self-structure and the material cover the sacrificial material at other locations and is shaped like a insect. The article 14 (8) shows that the temporary layer is provided on the first structure, and the entire structure including the sacrificial material is not as partially transparent. The web (i.e., the temporary layer) is made as if it were any layer and can be bonded to the side wall of the smoke structure until it is flattened or removed during the subsequent operation.卞 Then the rest of the control time will enter the _hole 3_ of 32 1265981 on the structure of the i 4 (a) diagram. If two lighter will enter the side of the cover 5 10 = other than the — - some residual sacrificial material will remain in place 2. The body is held in position. The figure) shows that the center of the process/, the medium plate, is shown to be opaque. A dielectric will be injected between the middle body and the outer cover via the holes. The dielectric can also selectively fill the smoke from the area. This residual and osmotic operation can be carried out in an electrochemical manufacturing setup with a suitable etching station and permeation station. I have already. Temporary layers that are not made by Hai will be removed or removed. This removal can be accomplished, for example, by planarization such as polishing. Alternatively, this removal can be done by Hungarian engraving, which only attacks the panel without attacking the dielectric or making the desired structure. The selectivity between the sheet and the material 15 of the desired structure may be the result of using different materials for the sheet and using a selective engraving agent for the material, or separating the sheet and structure due to the sacrificial material. Material, so money engraving can not be achieved by the structural material. The removal of the sheet causes the structure to return to the open state as shown in Figure 13, except that its intersection and possibly the smoke from the area will be filled with a dielectric. 2〇 'Then' the rest of the sacrifice material will be left over. This can be done after the structure has been removed from the electrochemical manufacturing machine (e.g., if the machine is used to make the split) or can be done in the machine. Additional penetration fills can be made if needed. The second example of the etching and infiltration embodiment is illustrated in Figures 15, 16 and 17 (detailed in Figure 33 1265981. In this example, an incomplete mask will be provided ((9) will completely block the residual agent from entering the body. In a certain area, to slow down __(10)# engraving, the difference between the masked area and the non-masked area can be achieved. More specifically, in this case, the mask is not Bonding will retain the structural material as part of the structure, and they will not adhere to the substrate. In this case, the mask will be surrounded by the sacrificial material, and when all the package _ sacrificial material is (four) After that, the materials can be removed or the structure dropped (for example, if the structure is inverted), so that the difference can be caused in the original military area. Due to the delay of the barrier, _ Will only be able to completely reach in a certain area 10 and not completely in other areas. The initial flaw can be suspended, and the cleaning and penetration of the structure will be carried out in the selected area (for example, in the finished area) In the area where the silk is engraved, (4) will be restarted again, and it will continue until all areas have been completely engraved. Then, if necessary, a subsequent infiltration operation is required. In still other embodiments, more than two times the remainder of the i5F segment can also be used in combination with two or more permeation operations. In some embodiments, These barriers can be used to form an extended marginal pass, which allows the surname to follow the run to achieve a desired position (ie, will be delayed by the increased channel). In other implementations In the case, the banknotes can be delayed or not, and most of them rely on the extension of the path. Instead, they rely on the shrinkage of 2 〇 =, and the boxing agent must pass through to obtain the size of the opening of the desired scribe area. It will be slowed down by narrowing the cross-section of the flow path. The delay in other implementations is dependent on a more balanced set of the two different methods described above. In some embodiments, the etch barrier can have a completely solid d 4 only The periphery of the barriers operates to remove the collar 34 1265981 barrier, while in other embodiments the walls can be perforated with holes so that the etchant can be removed in a shorter path The barrier is removed. In the second method, the last name is engraved. The barrier system can be made with the device, which can greatly slow down the device in the (4) region (10) of the two arms. Finally, these barriers become completely released, and can be stunned by the nightmare... ^, drop). The advantage of this second method is that it does not require squaring or (iv) to remove the temporary layer, which is necessary for the first method. Therefore, it will be easier to carry out the entire release and permeation process outside the electrochemical manufacturing machine in which the structure is fabricated. 10 Figures 15, 16 and 17(4) show no RF components, which are similar to those shown in Figure 11, but also use - as in the first! 2, 13, 14 (4) and the home-made structure shown in the figure, an etch barrier 362 is used to nearly but not completely surround the selected portion of the member. In this example, the etch barrier 362 will enclose the four arms ' of the member leaving the intersection of the four arms open, so that the central region of the 15 will be more directly exposed to the etchant. Where a barrier exists, the etchant must leave the material between the Guk barrier and the outer surface of the cover before it can enter the hole on the side of the outer conductor before it can begin moving inward to the center conductor. After the first stage of etching is periodically or controlled to remove material between the center conductor and the cover at the intersection, the dielectric can be injected into the central region and then continue etching until all sacrifices The material is removed. At some point in the etch, the barriers will be released and can be dropped (assuming the etch is inverted) or removed. Since the etched holes in the lobes are only disposed on the sidewalls of the coaxial device, the tops of the etch barriers can also be omitted, so only two vertical walls are needed, and this will be known as the 35 1265981 and the device. Separation. :=_ the end of the arm, wherein a center _ 0 cake is seen by the coined hole 374 of the coaxial line, etc., which is not surrounded, the outer conductor containing 5 10 15 20 material is removed; The shirt can be placed unless all the instruments/entry between the excluded conductors 372 are removed unless sacrificed along the channel 'unless the barrier 382 and... the sacrificial material is completely removed, and the barrier 382 brother 17(b) The figure shows that the same body 392 is filled with the barriers 394 and 398 which are called the center conductor 390 and the outer conductor and the surrounding. These resistances will be formed as early as 5 - the opening of the hole 382 is the channel 396', which is much longer than the one shown in the 17th. In some embodiments, the delay in material addition may be necessary or preferred to ensure that the material in the intersection is completely (four). Figure 18(4) and (m) illustrate a block diagram of two different sets of embodiments, each of which uses a multi-layer paste operation to provide a multi-layer structure on the substrate. In addition to the sacrificial material of (4), the material of the county itself is also a sacrificial material and/or a member of the sacrificial material (for example, a medium) that is attached to the multilayer structure. Such embodiments can be used in embodiments in accordance with the method of the 18th & Figure, when a larger amount of time is required to be used by the substrate or other than the removal of the sacrificial material from the multilayer structure. When the sacrificial material is removed from the sacrificial material, the fresh layer structure can be exposed to the minimum amount of money. The same situation applies to the embodiment of the method of Fig. 18(b). The method of Figure 18(a) begins with operation 1, 402, which is used to make a structure from 36 1265981 layers, and the structure is fabricated on a substrate having a material to be inscribed. Or being attached to a component that contains material to be engraved by the surname. The layers & - the desired shape of the structure are made of at least one structural material and also comprise a sacrificial support structure made of at least one sacrificial material. 5. After the structure is made, or is being manufactured, the process moves to operation 2', i.e., 404. This operation 2 is used to make a barrier element that can be performed with operation 1 or after operation 1 is completed. The process will move from operation 2 to operation 3, ie. This operation 3 is performed - or multiple times - and these _ operations may be (4) not separated by the operation of the middle door 10, and the money-cutting operation removes a small portion of the sacrificial material from the substrate or member. After operation 3, the process moves to operation 4, which is used to remove at least a barrier that will at least partially protect the material from which the multilayer structure is made. 15 The process will move from operation 4 to operation 5, ie. This operation 5 is used to carry out the - or multiple additions of the residual operation, while the sacrificial material is removed from the plurality of layers of the multilayer structure, and the respective operating systems may or may not be separated by two operations. θ Figure 18(b) is similar to the 18(4) diagram, but with some small force changes. Although the operation of Fig. 18(4) is made to protect the multilayer structure material, the operation 2 of the first diagram is used to form a barrier to protect the substrate or member from an initial attack by an etchant. Operation 3 of the l8(a) is similar to the operation $ of the ls(4) diagram, and the remainder is prepared for the remainder of the operation. The multilayer structure is removed from the layer of material. 37 1265981 Material barriers 18(a) and 18( b) Operation 4 of the figure is used to remove etch resistance 5 10 15 20 Operation 5 of Figure 18(b) is similar to operation 3 of Figure 18 (>), used to perform one or more The secondary etching operation removes material from the substrate or member. In both sets of embodiments, the fifth operation allows the structure and substrate or member to be released from the sacrificial material, or the operations can be followed by additional operations to complete the process. It should be understood that operation 5 of Figure 18(a) not only consists of a majority of the material scale sacrificial material 'which may also include the sacrificial material being removed from the substrate or component. Similarly, operation 5 of Figure 18(8) is not limited to the removal of the sacrificial material from the substrate or member, and may also include removal of the sacrificial material from a plurality of layers comprising the structure. VIII - The embodiment according to the method of Fig. 18(a) is shown in the 19th (4) to the figure. Figure 19(4) illustrates a multilayer structure that is loosened onto a substrate and the substrate contains a channel 456 filled with a sacrificial material. The multilayer structure is composed of a region of the sacrificial material 462 and a region of the structural material. Although it is preferable to use a single-operation to the sacrificial material axis of the 19th towel to obtain the structure in the first: it is unlikely. If it takes a long time to force the 456 to remove the sacrifice (4) 'missing in this whole paragraph (four) to make the multi-layer society = exposed to the agent, it may seriously damage the structural material 464 or ^ face ~ mouth this 'In some cases, it may be best not to skip the single operation from the state shown in the figure of the 19 (4) to the state of the 19th (4) diagram. 38 1265981 Thus, in this embodiment, a plurality of operations will be performed to achieve the final result shown in Fig. 19). In Fig. 19(b), a mask 472 is added to the multilayer structure. The barrier layer can be made of a structural material or a different material. The barrier layer is intended to prevent the expense of removing the sacrificial tree material from the channel 456 from reaching the structural material 464. As shown, the barrier layer will be placed in close proximity to the last layer of the gentleman structure, or the mask will be sacrificed by one or more layers in addition to the outer ring of one of the structural materials. The material is spaced from the desired structure. After the mask layer 472 is set, an etchant is applied to the 10 combined multilayer structure, substrate, and barrier layer, so that the etchant attacks the sacrificial material 462 located within the channel 456. This surname will continue for a period of time so that there is little or no sacrifice of material in the passage. The g's diagram shows that u ''T a :3⁄4 remains in the channel near the first layer of the multilayer structure. After the initial surname, 15 the channel 456 has been substantially removed and the barrier layer 472 is removed, as shown in Figure 19(d). The removal of the barrier layer can be carried out by flattening or remaining. However, the appropriate secret can be preferentially removed from the touch I layer: without damaging the structural material, or the structural material needs to be : Itchy sacrificial material to separate from the barrier material. W (20), the button engraving agent used to remove the sacrificial material is applied, and the sacrificial material of the multi-layer structure is removed under the top layer, and the passage of the substrate is followed to make the channel and the multilayer, the gums: Except that the structural material 464 is exposed to the lazy 39 1265981, the etched structure, section, member or device so formed is shown in paragraph 19(e) /, side J may or may not be retained with the final structure, And if necessary, it can be removed, for example, cut before or after the last etching operation. 10 15 20 A person skilled in the art will appreciate that the methods described herein are not limited to the described shapes or devices' and can be applied to a variety of situations where multiple stages of money need to be made. To stabilize a structure, or to protect a particular material or shape, to avoid exposure to etchants for more time than required to achieve the desired goal. The skilled person may also appreciate that many variations of the above-described methods may also include, for example, changes in the number of operations, changes in various operational parameters, changes in (IV) agents, formation of a designated multi-layered constitutive or a part thereof. Changes in actual production methods, etc. Various variations are also possible, for example, the I^P between the two sacrificial materials may be substantially conformable to the shape of the desired structure or, if advantageous, to some other complex shape. In some variations, not all of the etch barriers will completely enclose a desired multilayer structure in which some of the two remaining agents can contact certain areas of the multilayer structure without being in contact with the different μ structures. Other areas of the material. Two, three or more miscellaneous items can also be included. A variety of structural materials can also be used. In other variations, materials such as s, and jin must be in contact with the substrate, and not all materials are all surrounded by others (4). In some implementations, (iv) operations may be accomplished using chemistries, while in other embodiments, electrochemical etch operations may be performed. The various multi-stage residual operations of the various embodiments of the present invention are performed for a variety of reasons. For example, the reason for forming in the Qiutong A °〆 Temple includes but is not limited to (1) can make the simultaneous = layer _, can be very fragile, can be tolerated by 5 bad, and in the required multilayer structure exposure; (3) When the required structure is exposed - the =V: structure of the multi-V structure; and (4) can be used to: - remove the sacrificial material, but not the W layer structure The other part, forgive it to damage the material in 10 animals. And the content of the patent application and patent case listed in the following table is attached with a reference. The techniques disclosed in the accompanying drawings can be combined with the techniques of the present application in a § noon manner: for example, 'a better method for making a structure can be obtained by a shirt of some of these techniques, plus _ structure Can also be made, 15 better devices can also be made into towering. ------ • US Patent Application, Application 曰 • US Patent Application Publication No., published 曰 Inventor, name • 09/493, 496-2001. 01. 28 Cohen, “Methods of Electrochemical Manufacturing” • 10/677, 556-2003. 10. 01 Cohen et al. “The alignment of the components that can be received and • 10/830, 262-2004. 04. 21 ’ 1^ Method of less interlayer discontinuity in 3D structures fabricated by electrochemistry” • 2004. 05. 07 (Docket P-US099 -A-MF) kckard et al., "Methods for electrochemically fabricating structures that can be partially removed by planarization using a bonding pad, with a dielectric sheet and/or a seed layer," 10/271, 574-2002. 10. 15 • 2003-0127336A1-2003. 07. 10 Cohen et al., "Methods and Apparatus for Fabricating High Aspect Ratio Microcomputer Electrical Structures'' • 10/697, 597-2002. 12. 20 — " —------- Lockard et al., “EFAB Method and Apparatus Containing Spray Metal or Powder Coating Process” 41 • 10/677, 498-200310. 01 hood to manufacture • 10/724, 513-2003. 11. 26 hood making concept • 10/607, 931-2003. 06. 27 Microwave components and used • 2004. 05. 07 (Docket P-US093-A-MF) Cohen's 'including the use of surface treatment minus, • 10/387, 958-2003. 03. 13 • 2003-022168-A-2003. 12. 04 Talking about the use of 冓 • 10/434, 494-2003. 05. 07 • 2004-0000489-A-2004. 01. 01 for • 10/434, 289-2003. 05. 07 • 20040065555A-2004. 04. 08 Gang Zhang ’ “The use of a substrate-based, cathodic, conformable contact mask plating method and equipment • 10/434, 294-2003. 05. 07 • 20040065550A-2004. 04. 08 is the power that she has to deal with. • 10/434,295-2003. 05. 07 • 2004-0004001A-2004. 01. 08 et al., “Methods and devices for fabricating 3D structures integrated with semiconductors: (iv) 4 • 10/434, 315-2003. 05. 07 • 2003-0234179A-2003. 12. 25 Christopher A· Bang, “Using Sacrifice in the Case of I to Form the Green and Installed • 10/434, 103-2004. 05. 07 • 2004-0020782A-2004. 02. 05 Coher^t ’ “Electrochemically manufactured sealing microjunctions and methods and apparatus for making such structures, • 2004. 05. 07 (Docket P-US104-A-MF Tompson, “Having dielectric or active learning, and building and using the device” • 10/434, 519-2003. 05. 07 • 2004-0007470A-2004. 01. 15 Smalley, electrochemically fabricated by mutual or selective surface (4) 5 supplementation • 10/724, 515-2003. 11. 26 Cohen, “Methods for Electrochemical Manufacturing of Structures Included with Contact Covers and Substrates • 2004. 05. 07 (Docket P-US105 -A-MF §ΪΪ,, “Multiple for electrochemical fabrication of structures • 60/533, 947-2003. 12. 31 Kumar, "Expanded Probe Arrays and Squares for Labeling" 1265981 There are other various embodiments of the present invention. Some of these embodiments are in accordance with the combination of the techniques of the present application and the various techniques of the annex. Some embodiments may not use any cladding deposition and/or planarization process. Some embodiments may include selective deposition of a plurality of different materials on one or more layers. Some embodiments may use a non-electrodeposited cladding deposition process. Embodiments may use nickel 5 as the structural material, and embodiments thereof may use different materials such as gold, silver, copper, rhodium, tin, or other electrodepositable material that can be separated from a sacrificial material. Some embodiments may use Copper is used as a sacrificial material, while in some embodiments silver, rhodium, tin or other materials may be used. Some embodiments may use a nickel structural material and a copper sacrificial material using sodium monochloride 10 and ammonium hydroxide. Basic etchant, for example by New Haven, CT•

Ent0ne-OMmi銷售的EnstripC_3^選擇性地蝕刻。該等蝕 刻劑能被稀釋使用，或甚至添加侵蝕抑制劑（如硝酸鈉）的成 分來改善該製程的選擇性。 在參閱本文之後，專業人士將可容易得知本發明的許 15多其它實施例，設計變化和用法等。因此，本發明並不受 限於前述的特定實施例、變化例和用途，而僅由以下的申 請專利範圍來限制。 【圖式簡單說曰月】 第1(a)〜1(c)圖概略地示出一 cc罩鍍佈法之不同階段 2〇 的側視圖；而第圖係概略地示出一使用不同類型 之CC罩的鍍佈法之不同階段的側視圖。 第2(a)〜2(f)圖概略地示出一用來形成一特定結構的電 化學製造方法之不同階段的側視圖，其中有一犧牲材料會 被每:擇性沈積，而一結構材料會被覆面沈積。 43 1265981 第3(a)〜3(c)圖概略示出可用來人工實施第2(a)〜2(f) 圖中之電化學製法的各種次組合例之側視圖。 第4(a)〜4(i)圖概略示出使用黏接罩鍍佈法來製成一結 構的第一層，其中一第二材料的覆面沈積會覆蓋第一材料 5 在各沈積位置之間的開孔以及第一材料本身。 第5(a)圖示出第一組實施例之基本操作的方塊圖。 第5(b)〜5(d)圖示出第5(a)圖之操作2的變化例方塊圖。 第6(a)圖示出第二組實施例的方塊圖。 第6(b)圖示出第三組實施例的方塊圖。 10 第7(a)〜7(d)圖係概略地示出第6(a)圖的實施例應用於 一特定層組之各不同階段的側視圖。 第8(a)〜8(c)圖係概略地示出本發明另一實施例之不 同階段的側視圖。 第9(a)〜9(c)圖係概略地示出可用來修正製造瑕，疵之 15 本發明另一實施例的不同階段側視圖。 第10(a)與l〇(b)圖分別示出一第四及一第五組實施例的方塊圖。 第11圖示出一同軸RF裝置的立體圖，其可被電化學製 造’且可由該結構材料的製程後之多步驟、多階段、或多 操作的釋放來獲益。 20 第12(a)〜12(e)圖概略地示出一蝕刻與滲透製程之夂 不同階段’其係穿過一類似於第11圖之同軸裝置的四條分 支之一的同軸傳輸線中間看在一水平面（平行於該基材平 面）上所見者，其中可看到一中心導體以及延伸貫穿兩側外 導體的敍刻孔等。 44 1265981 添力口的 第U圖示出第10圖之同軸梦 x夏的立體圖，及 开敝、、、口構形成一“煙I] ”圍繞該結構的 第14(a)與14(b)圖示出第12® 丄、口刀 , >1 ^ 、、、、°構，並添加一暫時白、， 蝕刻擋止層（於第14(a)圖被示為邻 nn 叫知透明的，而第14(b)圖^ 為不透明的），其會罩蔽該結構 部个v Q淳在“煙自，，區外的末細 第15圖示出與第10及12〜14圖相同的同軸裝置之立體EnstripC_3^ sold by Ent0ne-OMmi is selectively etched. These etchants can be diluted or used to add a component of an erosion inhibitor such as sodium nitrate to improve the selectivity of the process. After reading this document, the skilled person will readily appreciate the various other embodiments of the present invention, design variations and usage, and the like. Therefore, the invention is not limited by the specific embodiments, variations and uses described above, but only by the scope of the following claims. [FIG. 1(a) to 1(c) schematically show a side view of a different stage of a cc cover plating method; and the figure schematically shows a different type of use. Side view of the different stages of the plating process of the CC cover. 2(a) to 2(f) schematically show side views of different stages of an electrochemical manufacturing method for forming a specific structure in which a sacrificial material is selectively deposited, and a structural material Will be deposited on the surface. 43 1265981 Figures 3(a) to 3(c) schematically show side views of various sub-combinations which can be used to manually carry out the electrochemical process of Figures 2(a) to 2(f). 4(a) to 4(i) schematically show a first layer of a structure formed by a method of bonding a mask, wherein a coating of a second material covers the first material 5 at each deposition position. The opening between the first and the first material itself. Figure 5(a) is a block diagram showing the basic operation of the first set of embodiments. 5(b) to 5(d) are diagrams showing a variation of the operation 2 of the fifth (a) diagram. Figure 6(a) shows a block diagram of a second set of embodiments. Figure 6(b) shows a block diagram of a third set of embodiments. 10(a) to 7(d) are diagrams schematically showing side views of the embodiment of Fig. 6(a) applied to different stages of a particular layer group. 8(a) to 8(c) are diagrams schematically showing side views of different stages of another embodiment of the present invention. Figures 9(a) through 9(c) schematically illustrate side views of different stages of another embodiment of the invention that can be used to modify manufacturing defects. Figures 10(a) and 1(b) show block diagrams of a fourth and a fifth set of embodiments, respectively. Figure 11 shows a perspective view of a coaxial RF device that can be electrochemically fabricated' and can benefit from the release of multiple steps, multiple stages, or multiple operations of the structural material. 20 Figures 12(a)-12(e) diagrammatically illustrate the different stages of an etching and infiltration process, which are seen through a coaxial transmission line that is one of the four branches of a coaxial device similar to Figure 11 A person seen on a horizontal plane (parallel to the plane of the substrate) in which a central conductor and a stud hole extending through the outer conductors on both sides are visible. 44 1265981 The U diagram of the Timing port shows a perspective view of the coaxial dream x summer of Fig. 10, and the opening, the mouth, and the mouth form a "smoke I" around the 14th (a) and 14 (b) of the structure ) shows the 12th 丄, mouth knife, >1 ^ , , , , ° structure, and add a temporary white, etch stop layer (in Figure 14 (a) is shown as neighbor nn called transparent And the 14th (b) figure ^ is opaque), which will cover the structure part of the v Q淳 in the "smoke from, the end of the area outside the 15th figure and the 10th and 12th to 14th figure Stereo of the same coaxial device

圖’但具有一不同形式的钱刻阻障，其有助於提供多階段 钱刻效果。 10 帛16圖示出第15圖的同軸裝置，其中可更清楚地看出 一臂的内部’並可看出該蝕刻阻障並未完全地延伸至該基 材。 弟17(a)圖示出第15及16圖的裝置之一同軸臂和钱刻阻 P早的端視圖；而第17(b)圖示出同一結構的端視圖，但具有 15 —雙層飿刻阻障。Figure 'but has a different form of money barrier, which helps provide a multi-stage money engraving effect. 10 帛 16 shows the coaxial device of Fig. 15, in which the inner portion of one arm can be more clearly seen and it can be seen that the etch barrier does not extend completely to the substrate. Figure 17(a) shows an end view of the coaxial arm and the etched P of one of the devices of Figures 15 and 16; and Figure 17(b) shows an end view of the same structure, but with 15 - double layers Engrave the barrier.

第18(a)及18(b)圖示出第六和第七組實施例之製程操 作的方塊圖。 第19(a)〜19(e)圖概略地示出第18(a)圖之一製法實施 例的側視圖。 45 1265981 【圖式之主要元件代表符號表】 2…第一材料 56…Y檯 4…第二材料 58,64…槽 6,82…基材 62…陽極 8…CC罩 66…電鍍溶液 10…絕緣體 68…支腳 12…陽極 72,74…框架 14···電鍍溶液 84···光阻 16···電解液 86,88…表面 18…電源 94,96…金屬 20…支撐結構 98-"3D結構 22…沈積材料 102〜104···操作步驟 26,92···開孔 112，114，122，124，132，134〜各操 32…電化學製造系統 作步驟 34…基材固持次系統 142，144，146，148〜各操作步驟 36…CC罩次系統 144-1〜144-8···各操作例 38…覆面沈積次系統 202…多層結構 40···平坦化次系統 203…瑕疯 42…滑塊 204,212,208".犧牲材料 44…致動器 206…阻罩 46…指示器 210,214…基材 48…載具 242〜264···各操作步驟 52…拋光板 314,326,352,374,382…蝕刻孔 54…力檯 320,332,370,39〇..中心導體 46 1265981 302,338···外罩 334,462…犧牲材料 342,346,348…蝕空區域 344…介電材料 350···煙囱區 356,464···結構材料 362,382,394,398〜蝕刻阻障 372,392···外導體 376,396,456···通道 388…钱刻劑 402〜410…各操作步驟 452···多層結構 454…基材 472···阻罩層 47Figures 18(a) and 18(b) illustrate block diagrams of the process operations of the sixth and seventh sets of embodiments. 19(a) to 19(e) are diagrams schematically showing a side view of an embodiment of the method of the first embodiment of Fig. 18(a). 45 1265981 [Main component representative symbol table of the drawing] 2...first material 56...Y table 4...second material 58,64...groove 6,82...substrate 62...anode 8...CC cover 66...electroplating solution 10... Insulator 68...leg 12...anode 72,74...frame 14···plating solution 84···photoresist 16··· electrolyte 86,88...surface 18...power supply 94,96...metal 20...support structure 98- "3D structure 22...deposition material 102~104···operation steps 26, 92··· openings 112, 114, 122, 124, 132, 134~ each operation 32... electrochemical manufacturing system as step 34...substrate Holding sub-system 142, 144, 146, 148 - each operation step 36 ... CC hood system 144-1 ~ 144 - 8 · each operation example 38 ... cladding deposition subsystem 202 ... multi-layer structure 40 · · · flattening times System 203... 42 42 42... Slider 204, 212, 208 " Sacrificial Material 44... Actuator 206... Resistor 46... Indicator 210, 214... Substrate 48... Carrier 242~264··· Operation Step 52... Polishing Plate 314, 326, 352, 374, 382 ...etching holes 54... force table 320, 332, 370, 39 〇.. center conductor 46 1265981 302, 338 · · · cover 334, 462... Sacrificial material 342, 346, 348... etched area 344... dielectric material 350 · · chimney area 356, 464 · · structural material 362, 382, 394, 398 ~ etch barrier 372, 392 · · outer conductor 376, 396, 456 · · · channel 388 ... money engraving agent 402 ~ 410... Each operation step 452···Multilayer structure 454...substrate 472···block layer 47

Claims (1)

1265981 拾、申請專利範圍： 1. 一種由多數黏接層來製成一多層3D結構的電化學製造 方法，包含： (A) 沈積至少犧牲材料及至少一結構材料於一基材 5 上來製成一層，其中該基材可包含先前沈積層，且至少 一該等材料的沈積包含一電沈積或無電沈積操作； (B) 重複(A)—或多次來製造多數層，而使後續層緊 鄰並黏接於先前形成層； (C) 進行一第一蝕刻操作來由該多數層或該基材除 10 去至少一材料的至少第一部份；及 (D) 進行一第二蝕刻操作，其係不同於第一蝕刻操 作，而來由該多數層或該基材除去至少一材料的至少一 部份。 2. —種由多數黏接層來製成一多層3D結構的電化學製造 15 方法，包含： (A) 沈積至少一犧牲材料及至少一結構材料於一基 材上來製成一層，其中該基材可包括先前沈積層，且至 少一該等材料包含一金屬； (B) 重複(A)—或多次來製造多數層，而使後續層緊 20 鄰並黏接於先前形成層； (C) 進行一第一蝕刻操作來由該多數層或該基材除 去至少一材料的至少第一部份；及 (D) 進行一第二蝕刻操作，其係不同於第一蝕刻操 作，而來由該多數層或該基材除去至少一材料的至少一 部份。 48 25 1265981 3.如申請專利範圍第！項之方法，更包含： 5 10 15 20 ⑼提供多數的預製罩體，其中各罩體皆包含 案化的介電材料具有至少—開孔，當在製造—層的至; -部份時可透過該等開孔來進行沈積，且各罩體皆包含 一支撐、、"構可支撐該圖案化的介電材料； 其中至少有一選擇性沈積操作包含： ⑴令該基材與_所擇的預製罩體之介電材料接觸； ⑺在有電鍍溶液存在的情況下，透過該所擇罩體 的至〆開孔將-電流導經_陽極與該基材之間，而使 所擇的材料沈積在該基材上來製成—層的至少 一部份；及 (3)分開該所擇的預製罩體與該基材。 4·如申請專利範圍第1項之方法，其中該等選擇性沈積操 作包含： (1) 在忒基材之一表面上提供一黏接的圖案化罩 體，該罩體含有至少一開孔： (2) 在有一電鍍溶液存在的情況下，透過該所擇罩體 的至少一開孔將一電流導經一陽極與該基材之間，而使 一所擇的沈積材料沈積在該基材上來製成一層的至少 一部份；及 (3)由該基材分開該罩體。 5·如申請專利範圍第1項之方法，其中該等選擇性沈積操 作包含： (1)在该基材之一表面上提供一黏接的圖案化罩 49 1265981 體，該罩體含有至少一開孔： ⑺當該圖案化罩體黏接於該基材上時，透過該 罩體中的至少-開孔來沈積一所擇沈積材料於該基材 上；及 5 (3)由該基材除去該罩體。 6.如申請專利項之方法，其中該第刻操作包 括使用至少一第一蝕刻劑及第一組蝕刻參數，而第二蝕 刻操作包括使用至少—第二軸劑及f二_刻參數。 7·如申請專利範圍第6項之方法，其中該第_和第二_ 10 劑互不相同。 8. 如申請專利範圍第7項之方法，其中該第—糊劑會選 擇性地攻擊各層之—種材料，而幾乎不會與該各層的另 一種材料發生反應。 9. 如申請專利範圍第6項之方法，其中該第—組兹刻參數 15 係與第二組蝕刻參數不同。 10·如申請專利範圍第6項之方法，其中該第一與第二餘刻 麵作會被一干涉操作分開。 11.如申4專利乾圍幻項之方法，其中該第—飿刻操作會 除去一第一材料，而第二蝕刻操作會除去一與第一材料 20 不同的第二材料。 ,、 12·如申請專利範圍第巧之方法，其中該第一钕刻操作會 終止於一硬擋止物。 13.如申請專利範圍第巧之方法，其中該观構會被—材 料保護而不受第-㈣劑和第_㈣操作的影響，該材 50 1265981 料會幾乎包圍該結構，且不會被第一蝕刻劑嚴重侵蝕。 14.如申請專利範圍第1項之方法，其中該3D結構會被能阻 抗第一蝕刻操作之一阻障材料及供附設該結構的基材 所保護，而不受第一蝕刻劑和第一蝕刻操作的影響。 5 15·如申請專利範圍第1項之方法，其中該3D結構會被一阻 障材料所保護來隔絕第一蝕刻劑和第一蝕刻操作，該阻 障具有一表面係至少部份地順應並隔離於該結構之一 表面。 16. —種由多數黏接層來製成一3D結構的電化學製造方 10 法，包含： (A) 沈積至少犧牲材料及至少一結構材料於一基材 上來製成一層，其中該基材可包含先前沈積層，且至少 一該等材料的沈積包含一電沈積或無電沈積操作； (B) 重複(A)—或多次來製造多數層，而使後續層緊 15 鄰並黏接於先前形成層； (C) 進行一第一蝕刻操作來由該多數層或該基材除 去至少一材料的至少第一部份；及 (D) 在完成第一蝕刻操作之後，進行一干涉操作； (E) 在該干涉操作之後，進行一第二蝕刻操作，而 20 由該各層或該基材來除去至少一種材料的至少一部份。 17. 如申請專利範圍第16項之方法，更包含： (F) 提供多數的預製罩體，其中各罩體皆包含一圖案 化的介電材料具有至少一開孔，當在製造一層的至少一 部份時可透過該等開孔來進行沈積，且各罩體皆包含一 51 1265981 支撑、口構可支樓該圖案化的介電材料； 其中至少有一選擇性沈積操作包含： ()/基材與一所擇的預製罩體之介電材料接觸； \ )在有電鍍溶液存在的情況下，透過該所擇罩體 的至4 1孔將1流導經—陽極與該紐之間，而使 一所擇的沈積村料沈積在該基材上來製成-層的至少 一部份；及 ⑺分開該轉的預製罩體與縣材。 18·如申#專利關第16項之方法，其巾該等選擇性沈積操 作包含： ()Λ基材之一表面上提供一黏接的圖案化罩 體，該罩體含有至少一開孔： ⑺在有—魏溶液存在的情況下，透過該所擇罩體 的至少1孔將_電流導經—陽極與該基材之間，而^ -所擇的沈積材料沈積在該基材上來製成 一部份；及 ν 、~田琢暴材分開該罩體。 19·如申請專利範圍第吻之方法，更包含： 20 案介ii提（、夕數的預製罩體，其中各罩體皆包含一圖 電材料具有至少—開孔，當在製造-層的至少 =可透過該等間孔來進行沈積，且各罩體皆包含 牙結構可支撐該圖案化的介電材料； 其中至少有一選擇性沈積操作包含·· (1)令該基材舆-所擇的預製罩體之介電材料接觸； 52 1265981 (2) 在有一電鍍溶液存在的情況下，透過該所擇罩體 的至少一開孔將一電流導經一陽極與該基材之間，而使 一所擇的沈積材料沈積在該基材上來製成一層的至少 一部份；及 (3) 分開該所擇的預製罩體與該基材。 20·如申請專利範圍第18項之方法，其中該第一蝕刻操作包 括使用至少一弟一餘刻劑及第一組餘刻參數，而第二姓 刻操作包括使用至少一第二蝕刻劑及第二組蝕刻參數。 21·如申請專利範圍第20項之方法，其中該第一和第二蝕刻 劑互不相同。 22.如申請專利範圍第21項之方法，其中該第一蝕刻劑會選 擇性地攻擊各層之一種材料，而幾乎不會與該各層的另 一種材料發生反應。 23·如申請專利範圍第22項之方法，其中該至少一結構材料 包含鎳，該至少一犧牲材料包含銅，且該第一蝕刻劑只 會選擇蝕刻銅而幾乎對鎳不起反應。 24.如申請專利範圍第16項之方法，其該干涉操作係由被第 一蝕刻操作蝕刻的至少一表面上除去蝕刻劑。 25·如申明專利範圍第24項之方法，其中該第二餘刻操作係 使用與第—操作相_則劑，且第二侧操作會在被 第一蝕刻操作所蝕刻的至少一表面之至少一部份上來 繼續進行。 26·^申請專利範@第25項之方法，其中該方法更包含：至 J有一第二干涉操作會在第二蝕刻操作之後來進行；且 53 1265981 27 乂有—弟三干涉操作會在第二干涉操作之後來進行。 二申晴專利範圍㈣項之方法，其中斜涉操作係除去 蝕刻阻p早，其係在第-钱刻操作時用來保護該多料 構或基材的至少一部份者。 S、、、° 28·如申請專利範圍第27項之方法，其 除土 A — Λί. ^ Μ弟一餘刻操作會 除去位在一先前受保護表面附近的材料。 1申請專利範圍第27項之方法，其中該綱阻障的 至>、有部份係用平坦化操作來進行。 “ 10 15 20 30. =請專利範圍第Μ項之方法，其中該第-餘刻操作合 除去凹設或埋入該基材内之—通道内的犧牲材料^ =部份，而該侧阻障會保護該多層結構的至少—部 31. 如申請專利範圍第3〇項之方法，其 攻擊構成該各層之一部份的犧牲材料Υ 4作會 專::_16項之方法，其中該各層的 括衣成-所需結構及至少一暫時餘刻阻罩匕 接於基材或至少一層的結構材料上。 Α '、黏 ，=範_項之方法，其中該各層 括衣成一所需結構及至少一暫時蝕 匕 黏接於犧牲材料。 “罩’該阻罩係僅 34·如申請專利範圍第％項之方法，复 35=:料被除去之後即會由該所需::：罩在周邊 •士申巧專利範圍第16項之方法，发 對於施加餘刻劑的方向或地心干涉操作包括相 來重新定向該結構。 541265981 Pickup, Patent Application Range: 1. An electrochemical manufacturing method for forming a multilayer 3D structure from a plurality of adhesive layers, comprising: (A) depositing at least a sacrificial material and at least one structural material on a substrate 5 Forming a layer, wherein the substrate may comprise a previously deposited layer, and at least one of the deposits of the materials comprises an electrodeposition or electroless deposition operation; (B) repeating (A) - or multiple times to fabricate the majority layer, and subsequent layers Adjacent to and bonded to the previously formed layer; (C) performing a first etching operation to remove at least a first portion of at least one material from the plurality of layers or the substrate; and (D) performing a second etching operation And different from the first etching operation to remove at least a portion of the at least one material from the plurality of layers or the substrate. 2. A method of electrochemically manufacturing a multilayer 3D structure from a plurality of adhesive layers, comprising: (A) depositing at least one sacrificial material and at least one structural material on a substrate to form a layer, wherein The substrate may comprise a previously deposited layer, and at least one of the materials comprises a metal; (B) repeating (A) - or multiple times to make the majority layer, leaving the subsequent layer 20 adjacent and bonded to the previously formed layer; C) performing a first etching operation to remove at least a first portion of the at least one material from the plurality of layers or the substrate; and (D) performing a second etching operation different from the first etching operation At least a portion of at least one material is removed from the plurality of layers or the substrate. 48 25 1265981 3. If you apply for a patent scope! The method of the present invention further comprises: 5 10 15 20 (9) providing a plurality of prefabricated covers, wherein each of the covers comprises a dielectric material having at least an opening, when in the manufacturing - layer to - part Depositing through the openings, and each of the covers includes a support, and the structure can support the patterned dielectric material; wherein at least one selective deposition operation comprises: (1) selecting the substrate and the substrate Contacting the dielectric material of the prefabricated cover; (7) in the presence of a plating solution, passing the current through the opening of the selected cover between the anode and the substrate, thereby making the selected Material is deposited on the substrate to form at least a portion of the layer; and (3) separates the selected preformed shell from the substrate. 4. The method of claim 1, wherein the selective deposition operation comprises: (1) providing a bonded patterned cover on one surface of the substrate, the cover having at least one opening (2) in the presence of a plating solution, a current is conducted between the anode and the substrate through at least one opening of the selected cover, and a selected deposition material is deposited on the substrate. The material is formed into at least a portion of a layer; and (3) the cover is separated by the substrate. 5. The method of claim 1, wherein the selective deposition operation comprises: (1) providing a bonded patterned mask 49 1265981 on one surface of the substrate, the cover having at least one Opening: (7) when the patterned cover is adhered to the substrate, depositing a selected deposition material on the substrate through at least an opening in the cover; and 5 (3) from the base The cover is removed. 6. The method of claim 2, wherein the first etching comprises using at least a first etchant and a first set of etch parameters, and the second etching operation comprises using at least a second axial agent and a f-cutting parameter. 7. The method of claim 6, wherein the first and second doses are different from each other. 8. The method of claim 7, wherein the first paste selectively attacks the materials of the layers and hardly reacts with the other material of the layers. 9. The method of claim 6, wherein the first set of parameters is different from the second set of etch parameters. 10. The method of claim 6, wherein the first and second residual faces are separated by an interference operation. 11. The method of claim 4, wherein the first engraving operation removes a first material and the second etching operation removes a second material different from the first material 20. , 12) A method of applying for a patent, wherein the first engraving operation terminates in a hard stop. 13. The method of applying for a patent scope, wherein the structure is protected by the material without being affected by the operation of the first (four) agent and the fourth (fourth), the material 50 1265981 is expected to almost surround the structure and will not be The first etchant is severely eroded. 14. The method of claim 1, wherein the 3D structure is protected by a barrier material capable of resisting a first etching operation and a substrate to which the structure is attached, without being exposed to the first etchant and the first The effect of the etching operation. The method of claim 1, wherein the 3D structure is protected by a barrier material to isolate the first etchant from the first etch operation, the barrier having a surface that is at least partially compliant and Isolate from one surface of the structure. 16. An electrochemical manufacturing method for forming a 3D structure from a plurality of bonding layers, comprising: (A) depositing at least a sacrificial material and at least one structural material on a substrate to form a layer, wherein the substrate A previously deposited layer may be included, and deposition of at least one of the materials comprises an electrodeposition or electroless deposition operation; (B) repeating (A) - or multiple times to fabricate the majority layer, leaving the subsequent layer tightly adjacent and bonded to Forming a layer previously; (C) performing a first etching operation to remove at least a first portion of the at least one material from the plurality of layers or the substrate; and (D) performing an interference operation after completing the first etching operation; (E) After the interfering operation, a second etching operation is performed, and at least a portion of the at least one material is removed from the layers or the substrate. 17. The method of claim 16, further comprising: (F) providing a plurality of prefabricated covers, wherein each of the covers comprises a patterned dielectric material having at least one opening, when at least one layer is fabricated A portion can be deposited through the openings, and each of the covers comprises a 51 1265981 support, the mouth structure can be patterned, the patterned dielectric material; wherein at least one selective deposition operation comprises: () / The substrate is in contact with a dielectric material of a selected prefabricated cover; \) in the presence of a plating solution, through the selected cover body to a distance of 41 holes between the anode and the anode And depositing a selected deposition material onto the substrate to form at least a portion of the layer; and (7) separating the prefabricated casing and the county material. 18. The method of claim 16, wherein the selective deposition operation comprises: () providing a bonded patterned cover on one surface of the substrate, the cover having at least one opening (7) in the presence of a Wei solution, through the at least one hole of the selected cover, the current is conducted between the anode and the substrate, and the selected deposition material is deposited on the substrate. Make a part; and ν, ~ Tian Hao fire material to separate the cover. 19. If the method of applying for the patent range kisses, the method further comprises: 20 case ii mentioning (the eve of the prefabricated cover, wherein each cover body comprises a picture of the electrical material having at least - opening, when in the manufacturing - layer At least = can be deposited through the inter-wells, and each of the covers includes a tooth structure to support the patterned dielectric material; wherein at least one selective deposition operation comprises (1) the substrate The dielectric material of the prefabricated cover is contacted; 52 1265981 (2) in the presence of a plating solution, a current is conducted between the anode and the substrate through at least one opening of the selected cover. And depositing a selected deposition material on the substrate to form at least a portion of the layer; and (3) separating the selected prefabricated cover from the substrate. 20 as claimed in claim 18 The method wherein the first etching operation comprises using at least one of a remaining agent and a first set of residual parameters, and the second surrogating operation comprises using at least one second etchant and a second set of etching parameters. The method of claim 20, wherein the first The second etchant is different from each other. 22. The method of claim 21, wherein the first etchant selectively attacks one material of each layer and hardly reacts with another material of the layers. The method of claim 22, wherein the at least one structural material comprises nickel, the at least one sacrificial material comprises copper, and the first etchant only selects etching copper and does not react almost to nickel. The method of claim 16, wherein the interfering operation removes an etchant from at least one surface etched by the first etching operation. 25. The method of claim 24, wherein the second residual operation The method of using the first operation is performed, and the second side operation is continued on at least a portion of at least one surface etched by the first etching operation. 26·^ Patent Application No. 25 Wherein the method further comprises: a second interference operation to J is performed after the second etching operation; and 53 1265981 27 — 弟 弟 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉The method of claim 2, wherein the oblique operation removes the etch stop p, which is used to protect at least a portion of the multi-material or substrate during the first-money operation. ,,, ° 28 · If you apply for the method of the scope of the 27th item, the soil removal A - Λ ί. ^ Μ 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一The method, wherein the portion of the barrier is >, is partially performed by a planarization operation. " 10 15 20 30. = The method of the third aspect of the patent, wherein the first-repetitive operation removes the concave The sacrificial material in the channel is disposed or buried in the substrate, and the side barrier protects at least a portion of the multilayer structure. 31. The method of claim 3, the attack composition The sacrificial material of one of the layers is a method of: _16, wherein the layers are formed into a desired structure and at least one temporary residual mask is attached to the substrate or at least one layer. On the material. The method of Α ', 粘, = 范_, wherein the layers are formed into a desired structure and at least one temporary etch is adhered to the sacrificial material. "Cover" is only 34. If the method of claim No. 100 is applied, the complex 35=: after the material is removed, it will be required by the following::: Covered in the periphery • Article 16 of the patent scope of Shishenqiao In the method, the direction or geocentric interference operation for applying the residual agent includes phase reorienting the structure.