TWI244512B - Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures - Google Patents

Abstract

Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are formed from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurring during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.

Description

1244512 玖、發明說明： 【發明所屬之技術領域】 相關申請案 本案要請求2003年5月7日申請之ν〇·1 0/434493美國專 5利申請案的權益，該申請案的内容併此附送。 發明領域 本發明之某些態樣的不同實施例概有關於電化學製造 領域’及經由逐層構建沈積材料來製造三維結構（例如部 件、物體、構件、裝置）的技術，並有關在完成料層製造之 1〇後再處理該等結構以使其由一構建基材（即暫時基材）移轉 至一結構性基材的方法。 C先前技術】 發明背景 一種由多數黏接層來製成三維結構(例如部件、構件、 衣置等等）的技術曾被Adam L· Cohen所發明，而被稱為電 化學製造。其正由1244512 发明 Description of the invention: [Technical field to which the invention belongs] Relevant application This application is to request the rights and interests of the United States Patent Application of ν〇 · 1 0/434493, filed on May 7, 2003. Included. FIELD OF THE INVENTION Different embodiments of certain aspects of the present invention are generally related to the field of electrochemical manufacturing 'and techniques for manufacturing three-dimensional structures (eg, parts, objects, components, devices) by constructing layer-by-layer deposition materials, and A method of processing the structures after layer manufacturing to transfer them from a build substrate (ie, a temporary substrate) to a structural substrate. [Previous Technology] Background of the Invention A technology for making three-dimensional structures (such as parts, components, clothing, etc.) from most adhesive layers was invented by Adam L. Cohen and is called electro-chemical manufacturing. Its being

California，Burbank·的 MicrofabricaTM 公司 (所為MEMGenR公司）以EFABR之名稱來商業化實施。此技 術曾揭露於2000年2月22日所頒發的No.6027630美國專利 中。該電化學沈積技術能利用獨特的罩覆技術來選擇性地 沈積材料，其包括使用一罩體，該罩體含有可撓變順形的 材料没在一支撐結構上，該支撐結構係獨立於要被鍍佈的 基材。當欲使用該罩體來進行電沈積時，該罩體之可順利 會在有電鍍溶液的情況下與一基材接觸，而該接觸會 抑制所擇部位的沈積。為方便起見，該等罩體乃被概稱為 1244512 可順形接觸罩，而該罩鍍技術則概稱為可順形接觸罩鍍佈 法。尤其是，基於California，Burbank的Microfabrica™公司 (前為MEMGenR公司）之名，故該罩體已被習稱為INSTANT MASKS TM而該製法則習稱為iNSTant MASKING或 5 INSTANT MASK™鍍佈法。利用可順形接觸罩鍍佈法之選 擇性沈積能夠用來製造單一材料層或多層結構。該 No.6027630美國專利的内容併此提供參考。由於本申請案 係有關於上述專利案，故將各種已公開之有關可順形接觸 罩鍍佈法（即INSTANT MASKING)與電化學製造的資料開 10 列如下： (1) A· Cohen，G· Zhang，F· Tseng，F· Mansfeld，U. Frodis 及P· Will等人之 “EFAB : Batch production of functional， fully-dense metal parts with micro-scale features55, Proc. 9th Solid Freeform Fabrication, The University of Texas at 15 Austin，pl61，Aug. 1998。 (2) Α· Cohen, G. Zhang，F. Tseng，F· Mansfeld，U. Frodis 及 P. Will 等人之 “EFAB : Rapid，Low-Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMs5\ Proc. 12th IEEE Micro Electro Mechanical Systems 20 Workshop，IEEE，p244, Jan. 1999。 (3) Α· Cohen之“3-D Micromachining by Electrochemical Fabrication”，Micromachine Devices，March 1999 o (4) G· Zhang，A. Cohen，U· Frodis，F. Tseng，F. Mansfeld， 及P. Will，等人之“EFAB : Rapid Desktop Manufacturing of 1244512MicrofabricaTM Company of Burbank, California (named MEMGenR) is commercialized under the name EFABR. This technique was disclosed in US Patent No. 6027630, issued on February 22, 2000. The electrochemical deposition technology can use a unique covering technique to selectively deposit materials, which includes the use of a covering body that contains flexible and compliant material on a supporting structure that is independent of The substrate to be plated. When the cover is intended to be used for electrodeposition, the cover can smoothly contact a substrate in the presence of a plating solution, and the contact can inhibit the deposition of a selected part. For convenience, these hoods are generally referred to as 1244512 conformable contact hoods, and the cladding technology is referred to as conformable contact hood plating. In particular, based on the name of Microfabrica ™ Company (formerly MEMGenR) of Burbank, California, the cover has been accustomed to be called INSTANT MASKS TM and the manufacturing method is conventionally called iNSTant MASKING or 5 INSTANT MASK ™. Selective deposition using conformable contact mask plating can be used to make single material layers or multilayer structures. The contents of US Patent No. 6027630 are incorporated herein by reference. Since this application is related to the above-mentioned patents, various published materials concerning the conformable contact cover plating method (ie, INSTANT MASKING) and electrochemical manufacturing are listed as follows: (1) A. Cohen, G · Zhang, F. Tseng, F. Mansfeld, U. Frodis, and P. Will, et al. "EFAB: Batch production of functional, fully-dense metal parts with micro-scale features 55, Proc. 9th Solid Freeform Fabrication, The University of Texas at 15 Austin, pl61, Aug. 1998. (2) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will, etc., "EFAB: Rapid, Low-Cost Desktop Micromachining" of High Aspect Ratio True 3-D MEMs5 \ Proc. 12th IEEE Micro Electro Mechanical Systems 20 Workshop, IEEE, p244, Jan. 1999. (3) Cohen, "3-D Micromachining by Electrochemical Fabrication", Micromachine Devices, March 1999 o (4) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P. Will , "EFAB: Rapid Desktop Manufacturing of 1244512

True 3-D Microstructures’’， Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications，The Aerospace Co·，Apr. 1999 oTrue 3-D Microstructures ’’, Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications, The Aerospace Co., Apr. 1999 o

(5) F. Tseng，U. Frodis，G. Zhang，A. Cohen, F. Mansfeld， 5 及P· Will等人之“EFAB : High Aspect Ratio，Arbitrary 3-D(5) "EFAB: High Aspect Ratio, Arbitrary 3-D" by F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, 5 and P. Will et al.

Metal Microstructures using a Low-Cost Automated Batch Process”，3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST’99)，June 1999 o (6) A. Cohen，U. Frodis，F. Tseng，G. Zhang，F. Mansfeld， 10 及 P. Will 等人之 “EFAB ·· Low-Cost， AutomatedMetal Microstructures using a Low-Cost Automated Batch Process ", 3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST'99), June 1999 o (6) A. Cohen, U. Frodis, F. Tseng, G. Zhang, F Mansfeld, 10 and P. Will et al. "EFAB ·· Low-Cost, Automated

Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures’’， Micromaching and Microfabrication Process Technology， SPIE 1999 Symposium on Micromaching and Microfabrication，September 1999 o 15 (7)F. Tseng，G. Zhang，U. Frodis，A. Cohen，F. Mansfeld， 及P· Wm等人之“EFAB : High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process”，MEMS Symposium，ASME 1999 International Mechanical Engineering Congress and Exposition，November， 20 1999 。 (8) Α· Cohen，“Electrochemical Fabrication (EFABTM)’’， Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EL-Hak，CRC Press，2002。 (9) “Microfabrication-Rapid Prototyping’s Killer Application’’， 1244512 page 1 〜5 of the Rapid Prototyping Report, CAD/CAM Publishing，Inc.，June 1999 o 以上九種公開資料的内容併此附送提供參考。 該電化學沈積法係能以多如上述專利及公開資料中所 5 述的方式來實施。在一種方式中，該製法在形成所要製造 之結構的各層時會進行三個分開的操作： 1. 藉電沈積來選擇性地沈積至少一材料於一基材的一 或多個所需區域上。 2. 然後，藉電沈積來覆面沈積至少一添加材料，而使 10 該添加材料覆蓋先前己被選擇性沈積的區域及該基材上先 前未被選擇性沈積的區域。 3. 最後，將第1和第2操作中所沈積的材料平坦化，來 製成一適當厚度之第一層平滑表面，其具有至少一區域含 有該至少一材料，及至少一區域含有至少該至少一添加材 15 料。 在第一層製成後，一或多數的添加層可被鄰設於前一 層並黏接於前一層的平滑表面上。這些添加層係藉重複第1 至第3操作一或多次而來製成，且其中各後續層的製造會將 前一形成曾和原始基材當作一新的加厚基材。 20 當所有各層的製造完成之後，至少一被沈積材料的至 少一部份會被以一餘刻製程來除去，而曝露或釋出所要製 造的3D結構。 在第1操作中進行選擇性沈積的較佳方法係為可順形 接觸罩鍍佈法。於此種鍍佈法中，有一或多數的可順形接 1244512 接式 該被製成。紅c料含—《結構，其上黏 =有-圖案化的可_介電材料。每—轉之可順形 5 10 15 ϋ料！會依據所钱著材料的特定截面來被成形。所要鍍 者之每一特定截面圖案皆需要至少一CC罩。 合、、阳C罩的支撐物典型為一金屬所製成的板狀結構，其 二被避擇性地钱，而要被鑛佈的材料會由其溶出。於此 /、型的方法中，該支撐物將會形如-祕製程中的陽極。 =在—變化方法中’該支撐物則可為-多孔或穿孔的材 二’於-電_作中欲沈積材料將會通過料穿孔而由遠 處的陽極移至-沈積表面上。於上述任—例中，cc罩皆可 共用一共同支撐物’即用讀著多層材料之可順形介電材 料的圖案，係可設於單-支撐結構的不同區域中。當單-支撐結構包含多倾佈圖料’該整個結構會被視為__cc 罩，而個別的㈣罩則可被視為次罩”。在本中請案中， 此種區別只在當要製成一特定點時才有分別。 在準備進行第一操作的選擇性沈積時，該CC罩的可順 形部份會被對準壓抵於該基材（或前—形成㈣者一層的 先則沈積部份)上之所要沈積的選擇部份上。該⑶罩與基材 係以-種方法織抵在-起，而使該CCR可順形部份中 的所有開孔㈣會含納電餘液。⑽罩制該基材的可 順形材料會形成電沈積的阻障，而在沈罩中的開孔内會填 滿電鑛溶液’故#供人—適當的電壓及/或電流時，即會形 成可將材料由-陽極(例該cc罩支撐物)移轉至該基材之來 接觸部份(在電賴作時㈣成_)的通路。 20 1244512 一CC罩及CC罩鑛佈法之例被示於第I(a)〜丨^)圖中。 第1(a)圖示出一CC罩8的侧視圖，其係由圖案化於陽極^上 的可順形或可撓變（例如彈性的）絕緣體10所構成。該陽極具 有兩種功能。第1(a)圖亦示出一基材6與該罩體8分開。該陽 5 極之一功能係作為該圖案化絕緣體10的支撐材料以保持其 整體性和排列對準，因為該圖案的廓形可能非常複雜(例如 含有許多絕緣材料的隔離“島”）。其另一功能係作為該電鍛 操作的陽極。CC罩鍛佈法會選擇性地沈積材料22於一夷材 6上，其係簡單地將該絕緣體壓抵於基材上，然後經由該絕 10緣體中的孔隙26a，26b等來電沈積材料，如第1(b)圖所示。 在沈積後，该CC罩會與該基材6分開（最好係非解體地），如 第1(c)圖所示。該CC罩鍍佈法與一“穿孔罩，，鍍佈法之區別 在於’該穿孔罩鑛佈法的罩蔽材料與該基材分離時將會發 生解體。如时孔罩㈣法’該cc罩麟法亦會選擇性地 15 將材料同時地沈積在整個料層上。 --Γ* —λτ /»_ · / 八—、_ / L» •丨 1 _ . & \ ^ 其錢佈區域可由一或多Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures '', Micromaching and Microfabrication Process Technology, SPIE 1999 Symposium on Micromaching and Microfabrication, September 1999 o 15 (7) F. Tseng, G. Zhang, U. Frodis, A. Cohen, F "EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process" by Mansfeld, and P · Wm, et al., MEMS Symposium, ASME 1999 International Mechanical Engineering Congress and Exposition, November, 20 1999. (8) Α Cohen, "Electrochemical Fabrication (EFABTM)", Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EL-Hak, CRC Press, 2002. (9) "Microfabrication-Rapid Prototyping's Killer Application", 1244512 page 1 to 5 of the Rapid Prototyping Report, CAD / CAM Publishing, Inc., June 1999 o The contents of the above nine kinds of public materials are attached for reference. This electrochemical deposition method can be carried out in many ways as described in the aforementioned patents and publications. In one approach, the manufacturing method performs three separate operations when forming the layers of the structure to be manufactured: 1. Selectively deposits at least one material on one or more desired areas of a substrate by electrodeposition . 2. Then, at least one additional material is deposited over the surface by electrodeposition, so that the additional material covers areas that have been previously selectively deposited and areas that have not been previously selectively deposited on the substrate. 3. Finally, the materials deposited in the first and second operations are planarized to make a first layer of smooth surface of an appropriate thickness, which has at least one region containing the at least one material, and at least one region containing at least the At least one additive material. After the first layer is made, one or more of the additional layers can be positioned adjacent to the previous layer and adhered to the smooth surface of the previous layer. These additional layers are made by repeating operations 1 to 3 one or more times, and the manufacturing of each subsequent layer treats the previously formed original substrate as a new thickened substrate. 20 After the manufacture of all the layers is completed, at least a portion of at least one of the deposited material will be removed by a process of engraving to expose or release the 3D structure to be manufactured. A preferred method for selective deposition in the first operation is a conformable contact mask plating method. In this plating method, one or more of the compliant 1244512 connections should be made. The red c material contains-"Structure, on which = =-patterned _ dielectric material. Every-turn can be cis-shaped 5 10 15 ϋ 料! Will be shaped according to the specific cross section of the material. At least one CC cover is required for each specific cross-sectional pattern of the plater. The support of the hood and the hood is typically a plate-like structure made of a metal. The second is to avoid selective land use, and the material to be mineral cloth will be dissolved out of it. In this method, the support will be shaped like an anode in a secret process. = In the method of change, the support may be a porous or perforated material. In the electrical operation, the material to be deposited will be moved from the distant anode to the deposition surface through the perforation of the material. In any of the above examples, the cc cover can share a common support, that is, a pattern of a conformable dielectric material reading multiple layers, which can be provided in different regions of the single-support structure. When a single-support structure contains multi-tilt layouts, 'the entire structure will be considered as a __cc cover, and individual hoods may be considered as secondary covers.' In the application in this case, this difference is only applicable when There is a difference only when a specific point is made. In preparation for the first operation of selective deposition, the conformable portion of the CC mask will be aligned and pressed against the substrate (or front-forming layer) The first deposition part) on the selected part to be deposited. The CD cover and the substrate are woven together in one way and the other, so that all the openings in the cis-shaped part of the CCR will Contains the electric residual liquid. The conformable material made of the substrate will form a barrier to electrodeposition, and the openings in the cover will be filled with the electric solution. When the current is flowing, a path can be formed to transfer the material from the anode (such as the cc cover support) to the contact portion of the substrate (when the electric operation is performed). 20 1244512 One CC Examples of the hood and CC cover lining method are shown in Figures I (a) to ^^). Figure 1 (a) shows a side view of a CC cover 8 which is patterned on the anode ^ Can be compliant or flexible For example, it is composed of an insulator 10. The anode has two functions. Figure 1 (a) also shows that a substrate 6 is separated from the cover 8. One of the functions of the anode 5 is to serve as the patterned insulator 10. The supporting material to maintain its integrity and alignment, because the profile of the pattern may be very complex (such as an isolated "island" containing many insulating materials). Another function is to serve as the anode for the electroforging operation. CC cover The forging method will selectively deposit the material 22 on a material 6, which simply presses the insulator against the substrate, and then deposits the material through the pores 26a, 26b and the like in the insulating body, such as Figure 1 (b). After deposition, the CC cover will be separated from the substrate 6 (preferably non-disintegrated), as shown in Figure 1 (c). The CC cover plating method and "The difference between the perforated cover and the cloth plating method is that the cover material of the perforated cover ore cloth method is disintegrated from the substrate. Such as the hole cover method, the cc cover method also selectively deposits the material on the entire material layer at the same time. --Γ * —λτ / »_ · / eight —, _ / L» • 丨 1 _. &Amp; \ ^ The money cloth area can be one or more

能在多個鍍佈操作中一再重複使用Can be reused repeatedly in multiple cloth plating operations

出该基材6與邊罩體8’分開。第i(e)圖卞 成與該基材6接觸。第1(f)圖示 ，、一罩體8’分開，該罩體包 ‘支撐結構20。第（d)圖亦示 圖示出該罩體8,係被設 出該沈積物22,，其係將一電 10 1244512 流由陽極12,導至該基材6所造成者。第1(g)圖示出該沈積物 22’在與罩體8,分離後仍留在該基材6上。於本例中，一適當 的電解液會置於該基材6與陽極12,之間，而一來自該溶^ 及/或陽極的離子流將會經由該罩體的開孔被導至基材上 5所要沈積材料之處。此類型的罩體可稱為無陽極式 instant mask™(aim)或無陽極可順形接觸（ACC)罩/ 不同於牙孔罩鍍佈法，該CC罩鍵佈法能容許cc罩與所 要鑛佈之基材完全分開地來製造（例如與一所要形成的沁 結構分開地來製造）。CC罩可料多方法來製成，例如，可 10用光微影法。所有的罩體皆可在該結構製造之前而非在其 製造期間來統合地同時製成。此分開製造可形成一簡單/、' 低成本、自動化、自含式，且内部乾淨的“桌上工廠，，，其 幾乎可被設在任何處來製造3D結構，而僅留下任何需要無 塵室的製程，例如光微影法另由特定部門來完成。 15 刖述電化學製造法之一例係被示於第2⑷〜2(f)圖中。 該等圖式不出該製法包括一第一材料2(犧牲材料)及一第二 材料4(結構材料）的沈積。在此例中，該CC罩8包含一圖案 化的可順形材料10(例如一彈性介電材料)及一由沈積材彬 所製成的支撐物12。該CC罩之可順形部份係壓抵於基材6 20上，並有-電鐵溶液14位於該可順形材料ι〇的開孔關。 -來自電源18的流會經由⑷兼作㈣極的支標物12及⑼ 兼作為陰極的基材來通過該電鍍溶液。第2⑷圖表示電流的 通過會造成電鍍溶液中的材料2，且該材料2會由陽極㈣ 擇性地移轉而鍍著在陰極6上。在使用CC罩8將第_沈積材 11 1244512 料2電鍍於基材6上之後，該〇：罩8即會被除去，如第2作) 圖所不。第2(c)圖示出該第二沈積材料4已被覆面沈積(即非 選擇性沈積）在先前沈積的第一沈積材料2上以及該基材6 的其餘部份上。由該第二材料構成之陽極(未示出）因電錢所 5產生的覆面沈積物將會通過一適當的電鍍溶液（未示出）來 移轉至該陰極/基材6上。該雙材料層嗣會被整體平垣化2 達到精確的厚度和平坦度，如第2⑷圖所示。在為所有各層 完成此程序之後，由第二材料4(即結構材料)所形成的多^ 結構20會被埋在第一材料2(即犧牲材料）中，如第2⑹圖所 10不。該埋入結構將會被蝕掉而形成所需裝置，即結構2〇， 如第2(f)圖所示。 15 20 一舉例的人工電化學製造系統32之各種構件乃被示於 第3⑷〜3(C)圖中。該系統32係由數個次系統34，36，％， 4〇等所組成。該基材固持次系統34係示於第3⑷至3(。)圖的 上部’而包含數個構件：⑴一載具48，⑺-金屬基材6其 上會被沈積料層’及(3)-線性滑塊42_回應來自致動器 44的驅動力而相對於該載具48上下移動該基材6。該次系統 34亦包含一指示器46可測量該基材之垂向位置的變異，其 可用來歧«斷料層厚度及/或沈積厚度。m统^亦 包含載具48的支腳68，可被精確地固裝在次系統％上。 該CC罩次系統％係被示於第3⑷圖的下部，而包含數 個構件：⑴—⑶罩8其實際上係、由共用-共同支撐物/陽極 12的多個CC罩（即次罩體)所組成，⑺精密幻⑽，⑺精密 丫枱56，⑷框架72其上可固裝次系統34的支腳68，及⑺一 12 1244512 槽58可容裝電解液16。該次系統34和36亦含有適當的電接 點（未示出）可連接於一適當的電源來驅動該CC罩鍍製程。 該覆面沈積次系統38係示於第3(b)圖的下部，而包含數 個構件：（1)一陽極62，（2) —電解槽64可供容裝電鍍溶液 5 66，及框架74其上可置設次系統34的支腳68。該次系統38 亦包含有適當的電接點（未示出）可將陽極連接於一適當的 電源以供驅動該覆面沈積製程。 該平坦化次系統40係示於第3(c)圖的下部，而包含一拋 光板52及附設的作動和控制系統（未示出）以供平坦化沈積 10 物。 除了上述内容之外，該No.6027630美國專利顯示該電 鍍方法亦能與絕緣材料結合使用。尤其是其顯示雖所揭的 電鍍實施例係使用兩種金屬，但有多種材料諸如聚合物、 陶瓷及半導體材料，及任何數目的金屬等，皆可藉前述的 15 電鍍法，或在整個電鍍製法中所發生的個別程序中來被沈 積。其顯示一薄電鐘座可例如藉賤射來沈積在一不充分導 電的沈積物（例如一絕緣層）上，俾供進行後續的電鍍。其亦 顯示多種支撐材料（即犧牲材料）亦可被包含於電鍍元素 中，而可選擇地除去該等支撐材料。 20 由電鍍金屬來製造微結構的另一種方法（即使用電化 學製造技術)係被揭於Henry Guckel的No.5190637美國專利 中，其名稱為“以多等級深X光微影法及犧牲金屬層來製造 微結構的方法”。此專利揭示利用阻罩曝光來製造金屬結構 的方法。一第一層主金屬會被電鍍在一曝露的電鍵座上來 13 1244512 填滿一光阻中的空隙，該光阻嗣會被除去，且一第二金屬 會被電錢在該第一層與電鍍座上。該第二金屬的曝露表面 嗣會被加工磨低至一高度一而曝現第一金屬來形成一平坦 均勻的表面延伸通過該第一和第二金屬。然後一第二層的 5形成可藉佈設一光阻層於該第一層上，並重複用來製造第 一層的製程而來完成。該製程會一再重複直到整個結構形 成，且該第二金屬被蝕刻除去為止。該光阻可藉鑄造來成 形於该電錢座或前一層上，且該光阻中的空隙得以X光或 uv輻射經由一圖案化罩曝光該光阻而來形成。 1〇 在該領域中仍需要加強EFAB製程中的導電材料、介電 材料、半導性材料、其它材料、受處理材料、及/或結構材 料等之可結合性。又，在該領域中亦有需要來結合電化學 製造的結構與介電基底或基材，活性基底或基材（具有能與 4結構父互作用之元素的基底或基材），或是具有可作為該 15 ^構卜的目的者）’及/或含有造型結構的基底或基 材等。在該領域中亦有需要改善該等基底或基材與電化學 衣仏結構之間的霉占固。又在該領域中亦需要擴展能力範圍 以擴張可用來製成所需結構（包括它們的基底或基材）的材 料和製法的範圍。 20 【發明内容】 發明概要 本1明的各種悲樣之一目的係為增進電化學製造技術 來擴張包化學製造法的能力，以滿足不同用途之結構性與 功能性需求，並得擴展該技術的潛在用途。 14 1244512The substrate 6 is separated from the side cover 8 '. FIG. I (e) is in contact with the substrate 6. As shown in Fig. 1 (f), a cover 8 'is separated, and the cover includes a support structure 20. Figure (d) also shows that the cover 8 is provided with the deposit 22, which is caused by an electric current 10 1244512 flowing from the anode 12 to the substrate 6. Figure 1 (g) shows that the deposit 22 'remains on the substrate 6 after being separated from the cover body 8. In this example, an appropriate electrolyte will be placed between the substrate 6 and the anode 12, and an ion current from the solvent and / or anode will be guided to the substrate through the openings of the cover. 5 places on the material where the material is to be deposited. This type of cover can be called an anodeless instant mask ™ (aim) or anodeless conformable contact (ACC) cover. Unlike the dental hole cover plating method, the CC cover key cloth method allows the cc cover to The base material of the mineral cloth is manufactured separately (for example, separately from a Qin structure to be formed). CC masks can be made in a number of ways, for example, photolithography can be used. All shrouds can be made in one piece before the structure is manufactured, rather than during its manufacture. This separate manufacturing can form a simple, low-cost, automated, self-contained, and clean interior "desktop factory," which can be located almost anywhere to make 3D structures, leaving only what is needed The manufacturing process of the clean room, such as the photolithography method, is also completed by a specific department. 15 An example of the electrochemical manufacturing method described above is shown in Figures 2 to 2 (f). These drawings do not show that the manufacturing method includes a Deposition of a first material 2 (sacrificial material) and a second material 4 (structural material). In this example, the CC cover 8 includes a patterned conformable material 10 (such as an elastic dielectric material) and a A support 12 made by Shen Jicaibin. The conformable part of the CC cover is pressed against the substrate 6 20, and the electric iron solution 14 is located at the opening of the conformable material ι〇 -The current from the power source 18 will pass through the plating solution through the support 12 which doubles as the cathode and the base material which also serves as the cathode. The second figure shows that the passage of current will cause the material 2 in the plating solution, and the Material 2 will be selectively transferred from anode ㈣ to be plated on cathode 6. After using CC cover 8 to deposit material 11 1244 After the 512 material 2 is electroplated on the substrate 6, the 0: cover 8 will be removed, as shown in the second picture. Figure 2 (c) shows that the second deposition material 4 has been deposited on the surface (ie (Non-selective deposition) on the previously deposited first deposition material 2 and the rest of the substrate 6. The overlying deposits produced by the anode 5 (not shown) made of the second material due to the electricity money 5 will It will be transferred to the cathode / substrate 6 by an appropriate plating solution (not shown). The bi-material layer 嗣 will be flattened as a whole to achieve precise thickness and flatness, as shown in Figure 2⑷. After completing this procedure for all layers, the multiple structure 20 formed by the second material 4 (ie, the structural material) will be buried in the first material 2 (ie, the sacrificial material), as shown in Fig. 2 (a) and 10 (b). The buried structure will be etched away to form the required device, namely the structure 20, as shown in Figure 2 (f). 15 20 An example of the various components of the artificial electrochemical manufacturing system 32 is shown in Figure 3 ~ Figure 3 (C). The system 32 is composed of several sub-systems 34, 36,%, 40, etc. The substrate holding sub-system 34 is shown in Section 3 The upper part of the figure 3 (') contains several components: a carrier 48, ⑺-a metal substrate 6 on which a layer of material will be deposited' and (3)-a linear slider 42_ response from the actuator 44 The driving force moves the substrate 6 up and down relative to the carrier 48. The secondary system 34 also includes an indicator 46 that can measure the variation of the vertical position of the substrate, which can be used to determine the thickness of the material cut-off layer and / Or deposition thickness. The system M also includes the feet 68 of the carrier 48, which can be accurately fixed to the secondary system%. The CC cover system% is shown in the lower part of Figure 3 and contains several components. : ⑴—⑶ cover 8 is actually composed of multiple CC covers (that is, secondary covers) of common-common support / anode 12, ⑺precision ⑽, ⑺precision platform 56, ⑷frame 72 above it The feet 68 of the secondary system 34 can be fixed, and the tank 12 1244512 can hold the electrolyte 16. The secondary systems 34 and 36 also contain appropriate electrical contacts (not shown) that can be connected to an appropriate power source to drive the CC cover plating process. The overlying deposition sub-system 38 is shown in the lower part of FIG. 3 (b), and includes several components: (1) an anode 62, (2)-an electrolytic cell 64 for containing a plating solution 5 66, and a frame 74 The feet 68 of the secondary system 34 may be mounted thereon. The secondary system 38 also includes appropriate electrical contacts (not shown) to connect the anode to an appropriate power source for driving the overlay deposition process. The planarization sub-system 40 is shown in the lower part of FIG. 3 (c), and includes a polishing plate 52 and an attached operation and control system (not shown) for planarizing the deposit. In addition to the above, the U.S. Patent No. 6027630 shows that the plating method can also be used in combination with insulating materials. In particular, it shows that although the disclosed plating examples use two metals, there are many materials such as polymers, ceramics, and semiconductor materials, and any number of metals. Individual processes that occur during the manufacturing process are deposited. It is shown that a thin electrical clock base can be deposited, for example, by a low-level emission on an insufficiently conductive deposit (such as an insulating layer) for subsequent plating. It also shows that a variety of support materials (i.e. sacrificial materials) can also be included in the plating elements, with the support materials being optionally removed. 20 Another method for manufacturing microstructures by electroplated metal (ie, using electrochemical manufacturing technology) was disclosed in Henry Guckel's US Patent No. 5,190,637, entitled "Multilevel deep X-ray lithography and sacrificial metal Layers to make microstructures. " This patent discloses a method for fabricating a metal structure using mask exposure. A first layer of main metal will be plated on an exposed key base 13 1244512 to fill the gap in a photoresist, the photoresist will be removed, and a second metal will be charged by the electric money in the first layer and On the plating base. The exposed surface of the second metal is milled down to a height while exposing the first metal to form a flat and uniform surface extending through the first and second metals. Then the formation of a second layer 5 can be accomplished by arranging a photoresist layer on the first layer and repeating the process used to make the first layer. This process is repeated until the entire structure is formed and the second metal is etched away. The photoresist can be formed on the electric money holder or the previous layer by casting, and the gap in the photoresist can be formed by exposing the photoresist through X-ray or UV radiation through a patterned cover. 10 In this field, the combination of conductive materials, dielectric materials, semiconductive materials, other materials, treated materials, and / or structural materials in the EFAB process still needs to be strengthened. Also, there is a need in this field to combine electrochemically manufactured structures with dielectric substrates or substrates, active substrates or substrates (substrates or substrates with elements capable of interacting with the 4 structure parent), or It can be used as the purpose of this structure) and / or a substrate or a substrate containing a modeling structure. There is also a need in this field to improve mold retention between such substrates or substrates and the electrochemical clothing structure. There is also a need in this field to expand the range of capabilities to expand the range of materials and processes that can be used to make the desired structures, including their substrates or substrates. [Summary of the Invention] Summary of the Invention One of the various tragic aspects of the present invention is to expand the capability of the chemical manufacturing method to enhance the electrochemical manufacturing technology to meet the structural and functional requirements of different applications, and to expand the technology. Potential uses. 14 1244512

分?里恶诼μ，、匕曰的和馒點等，將可在專業 内容後更清楚瞭解。本發明的種態樣，不論 或能由所述内容推知者，皆可單獨或組合來 達成上述之任_目的；戒者其可能不能達成上述之任何目 的仁其部能達成由所述内容中來推知的某些其它目的。 並非所有該等目的皆能由本發明之任何單—態樣來達成， 雖然單一目的可能相關於某些態樣。 本發明的第一態樣係提供一種由多數黏接層來製成一 3D、、、。構的電化學製造方法，包含(Α)選擇性沈積—料層的至 〆箱⑨1日$基材上，該暫時基材可包括先前沈積的 材料’（B)製造多數料層且使後續層緊鄰雌接於先前沈積 層’而該製造包括重複難⑷多數次；（c)在製舒數層之 後’將-含有-介電材料的結構基材固接於該結構之一層 的至少-部份’並由該結構除去該暫時基材的至少一部份。The points of evil, 曰, 曰, and 馒, etc. will be more clearly understood after the professional content. The aspects of the present invention, whether or can be inferred from the content, can be used alone or in combination to achieve any of the above-mentioned objectives; or they may not be able to achieve any of the above-mentioned objectives. To infer some other purpose. Not all of these objectives can be achieved by any single aspect of the invention, although a single purpose may be related to some aspects. A first aspect of the present invention provides a 3D, ..., made of a plurality of adhesive layers. Structured electrochemical manufacturing method, including (A) selective deposition of the material layer to the substrate on the first day, the temporary substrate may include the previously deposited material '(B) to manufacture most material layers and make subsequent layers Immediately next to the previously deposited layer ', and the fabrication includes repeated difficulties many times; (c)' Structure-containing-dielectric material structural substrate is fixed to at least-part of one layer of the structure after several layers are made. Part 'and remove at least a portion of the temporary substrate from the structure.

^^一嘵腦可程式化來控制接觸 ^置’固接裝置等，而使該固接裝 形成之後來操作。 15 1244512 本务明的第二態樣係提供一種由多數黏接層來製成一 結構的電化學製造方法，包含··（A)選擇性沈積一料層的 至少一部份於一第一暫時基材上，該第一暫時基材可包括 先則沈積材料；及(B)製造多數層而使後續層緊鄰並黏接於 5先刖沈積層；及(C)在製成多數層之後固接一第二暫時基材 (其包括一介電材料)於該結構之_層的至少一部份，並由該 結構除去第一暫時基材的至少—部份，然後固接一結構基 材於该結構之一層的至少一部份，其至少會部份疊覆第一 暫時基材曾固接的位置。 本發明的第四態樣係提供一種由多數黏接層來製成一 構的電化學製造方法，包含：（a)選擇性沈積一料層的 至夕一部份於一犧牲基材上，該暫時基材可包括先前沈積 的材料，（B)製造多數層而使各後續層緊鄰並黏接於先前沈 知層，其中該製造包括重複操作(A)多數次；（C)在製成多數 層之後將一結構基材（包括多數材料及/或一圖案化結構）固 接於邊結構之_層的至少一部份，並由該結構除去該暫時 基材的至少一部份。 本發明的第五態樣係提供一種由多數黏接層來製成一 、構的黾化學製造方法’包含：（A)選擇性沈積一料層的 2 0 、 至）一部份於一第一暫時基材上，該第一暫時基材可包括 士 、 月尤積的材料；（B)製造多數層而使後續層緊鄰並黏接於 士 、/ 所沈積層；及(C)在製成多數層之後，將一第二暫時基材 (其包括多數材料及/或一 圖案化結構）固接於該結構之一層 、〉'一部份，並由該結構除去第一暫時基材的至少一部 16 1244512 份，然後將一結構基材固接於該結構之一層的至少一部 份，其至少會部份疊覆第_暫時基材曾固接的位置。 本杳明的第六態樣係提供一種用來製造一多部段3D結 構的電化學製造方法，其中至少有一部段係由多數黏接膚 5所製成；該方法包含··（A)製成該多部段結構的至少一部 段，包括：（1)選擇性地沈積一層的至少一部份於—基材上， 該基材可包括先前沈積的材料；（2)製造多數層而使後續層 緊鄰並黏接於先前沈積層，其中該製造包括重複操作多 數次；（B)提供該多部段結構之至少一添加部段；（c)將該至 10少一部段固接於該至少一添加部段來形成該多部段結構。 本發明的更多態樣將可在專業人士參閱所揭内容之後 更清楚暸解。本發明的其它態樣可包括上述本發明之各態 樣的組合，及/或加上一或多個實施例的各種特徵。本發明 之其它態樣可包括用來實施一或多種上述發明方法的芽 15置。本發明之這些其它態樣可提供上述各種態樣的不同1 合，以及提供未被具體說明於上的其它構造、結構、功& 關係和製法等等。 b 圖式簡單說明 第1(a)〜1(c)圖概略地示出一 CC罩鍍佈法之不门卩比尸 20 的側視圖；而第1(d)〜1(g)圖係概略地示出_伟闲 忧用不同類型 之CC罩的鍍佈法之不同階段的側視圖。 第2(a)〜2(f)圖概略地示出一用來形成一特定奸構的恭 化學製造方法之不同階段的側視圖，其中有一犧牲材料會 被選擇性沈積，而一結構材料會被覆面沈積。 17 1244512 第3(a)〜3(c)圖概略示出可用來人工實施第2(a)〜2(f) 圖中之電化學製法的各種次組合例之側視圖。 第4(a)〜4(i)圖概略示出使用黏接罩鍍佈法來製成一結 構的第一層，其中一第二材料的覆面沈積會覆蓋第一材料 5 在各沈積位置之間的開孔以及第一材料本身。 第5圖示出本發明一較佳實施例之基本操作的流程圖。 第6(a)〜6(c)圖示出一依據本發明的較佳實施例來造 成的結構例，其中第6(a)及6(b)圖示出該結構之二不同的立 體圖，而第6(c)圖示出該結構的側視圖。 10 第7(a)〜7(〇)圖示出依本發明之一較佳實施例由多數 黏接層來製成第6(a)〜6(c)圖之結構的各程序。 第8(a)〜8(d)圖示出製成第6(a)〜6(c)圖之結構的最末 層之一變化例，及該永久基材如何配接該料層。 第9(a)〜9(e)圖示出當實施本發明之一實施例時的各 15 步驟。 第10圖提供第9(a)〜9(e)圖的實施例之基本操作的流 程圖。 第11(a)〜ll(j)圖示出當實施本發明之一實施例時所進 行的各操作步驟。 20 第12圖提供本發明另一實施例之基本操作的流程圖。 第13(a)〜13(c)圖概略示出將一結構702由一第一基材 704轉接於一第二基材706的過程。 第13(d)〜13(e)圖概略示出具有可加強固接之修正構 造的結構與基材之側視圖。 18 1244512 第14(a)〜14(c)圖概略示出一製法可修正一結構之一 固接層的構造使其含有第13(d)圖所示的凹槽。 第15(a)〜15⑴圖概略示出一製法可修正一結構之一固 接層的構造使其含有扣接凹槽以加強該結構與基材的互 5 接。 【實施方式】 較佳實施例之詳細說明 第1(a)〜1(g)，2(a)〜2(f)，3(a)〜3(c)圖乃示出一種習 知之電化學製法的不同特徵。其它的電化學製造技術係被 10 揭於上述之Ν〇·6027630美國專利案，各先前公開資料，及 所附送之各其它專利和專利申請案中，亦有其它可由該等 公開貢料、專利、及專利申請宰等所述的各種方法來組合 令亍生，或者專業人士可由本案所揭内客來推知者。所有5亥 寺技術皆能與於此所揭之本發明各禮態樣的不同貫施例來 15結合以產生更佳的實施例。亦有其它實施例可由在此所揭 之各種貫加例的組合來衍生形成。 第4(a)〜4(i)圖示出於一多層製法中製成單一層之各階 段，其中有一第二金屬會沈積在一第/金屬上及該第一金 屬的開孔内，而其沈積物會形成該層的一部份。在第4(a) 20圖中’乃不出一基材82的側視圖，其上有叮圖案化光阻84 會被成形如第4(b)圖所示。在第4(c)圖中，一光阻圖案係由 固化、曝光、顯影該光阻而來形成。該光阻84的圖案化會 造成開孔或孔隙92(a)〜92(c)等由該光阻的表面86穿過其 厚度而延伸至基材82的表面88。在第4(d)圖中，一金屬94(如 19 1244512 鎳）已被電鍍於該等開孔92(a)〜92(c)内。在第4(e)圖中，二亥 光阻已被由基材上除去（例化學剝除），而曝露出該基材U 上未被第一金屬94覆蓋的區域。在第4(f)圖中，一第二金屬 96(例如銀）已被電鍍覆蓋在該基材82(其係可導電的）之整 5個曝露部份與第一金屬94(亦可導電）上。第4(幻圖示出已= 成該結構的第一層，其係將第一和第二金屬平坦化磨低至 一高度以曝露第一金屬並設定第一層的厚度而來製成者。 在第4(h)圖中係重複第4(b)〜4(g)圖中的步驟多數次來製成 一所示的多層結構，其中每一層皆含有兩種材料。針對大 ίο部份的用途，該兩種材料之一者將會被除掉如第4(i)圖所 示，來形成一所需的3D結構98(例如構件或裝置）。 雖所揭各實施例主要係集中於可順形接觸罩和罩鍍操 作，但所揭之各種實施例、變化例、及技術等亦可應用於 近設罩體與罩鍍操作（即使用言亥等罩II的操#，該等罩體會 15因罪近基材一縱使並未接觸一而至少部份地選擇性罩蔽該 基材）’非可順形罩與罩鍍操作（即接觸表面並非充分可撓變 順形的罩體和依據鱗罩體的操作），及黏接罩與罩鍍操作 (即黏接於-基材的罩體和使用該等罩體的操作，該基材上 會在未接觸處發生選擇性沈積或蝕刻）。 20 第5圖示出本發明一較佳實施例之基本操作的流程 圖。該製程開始於操作1()2，其係提供一基材，該基材上將 會被添加後續的沈積材料層。此基材典型係由一導電材料 製成，其上能夠進行電沈積，但亦可為一介電材料其上已 被沈積一導電材料的晶種層。 20 1244512 該製程會繼續前進至操作104,其係將一料層沈積在該 基材或一已被設在該基材上的先前形成層上。依據本發明 的某些實施例，所沈積的料層會包含二或更多種材料，其 中之一或多者會被圖案化來賦具一待製成結構所需的造 5 型，而其它之一或多種材料會形如犧牲材料其在料層製造 完成之後，將會被由該結構除去。本發明之一較佳實施例 係用來將該結構由其所製設的基材（即該暫時基材）分離開 來，且因最好使該基材由一與犧牲材料不同的結構性材料 製成，故在某些實施例中，沈積於該基材上的第一或更多 10 層可僅由犧牲材料來構成。 又，在本發明的較佳實施例中，由於其上要製設該結 構的基材並非該結構所要固接的永久基材，故最好在某些 實施例中，所沈積之(該結構的）第一層相對於永久基材係為 該結構的最末層，而所沈積的最末層相對於該永久基材係 15 為第一層。換言之，在某些實施例中，該結構之各層最好 以相反順序來沈積。 所用的電化學製造方法係可類似於第1 (a)〜1 (c)及2(a) 〜2(f)圖中所示者，或在No.6027630美國專利中所揭之另一 製法，或在前述各公開資料中所述之一種製法，或在所附 20 專利及申請案陳報表中之一專利或申請案中所述的一種製 法，或在該等公開資料、專利及申請案中所述之各種方法 組合的一種製法，或專業人士已知或可推知的製法。當然 該等結構部份亦可藉其它3D成型或製造方法來製成。 在沈積一層之後，該製程會前進至方塊106，其中會查 21 1244512 為疋否該結構的最末層已被製成（即在本發明的某些實施 例中將會接觸永久基材的—層）。若其答案為‘‘否，，，則該製 耘又S、兀回刼作1〇4再進行沈積。若該答案為“是，，，則製程 會移向操作108。 /1作108係將一永久基材（例如一介電材料）固接於該 結構的最後沈積層。該固接可藉一黏劑來達成，例如」感: [式黏劑’-熱敏式黏劑，或—可輻射固化的黏劑(假使該 基材能透射適當的輻射）。該黏劑的敷設可用專業人士習知 的f種方式來進行(例如塗佈、旋塗、喷灑等等）。該固接亦 1〇可藉非黏劑連結技術來完成，例如表面熔接、燒結、焊接、 超音波熔接、振動熔接等等。 在將永久基材與沈積材料層固接在一起之後，該製程 會則進至操作11G’其中-永久基材和料層等會與該暫時基 材分離，且所有的犧牲材料皆會被除去。若有一或多層犧 15牲材料介設於暫時基材與結構材料之間，或若該暫魏材 係由犧牲材料或由會被用來選擇性分離該犧牲材料蜂構 材料之钱刻劑所攻擊的其它材料來製成時，則該分料程 可形如該犧牲材料的去除程序之一自然部份來發生。 ) 纟變化實施例中，該操作1()8與11()中的三項工作能以 2〇不同的順序來進行，例如：⑴先連結再同時分離及去_ 牲材料；⑺先連結’再分離，然後去除；（3)同時地分離及 去除再連結；（4)先去除，再連結，然後分離。 第6⑷〜6⑷圖示出依據本發明之一較佳實施例所造 成之-結構例（譬如-開關）。該結構之二不同的立體圖係被 22 1244512 示於第6(a)與6(b)圖中，而一側視圖係示於第6(c)圖中。第 6(a)圖中可看見該整體結構丨22，且該結構固接於永久基材 124。第6(b)圖示出該結構122已固接於永久基材124時的一 部份，但可看出當該結構被製造並固接於暫時基材如第7⑷ 5至7(n)圖所示者的料層製程。如第6⑷圖所示，該結構係由 十層201〜210所構成。 10 15 20 第7⑷〜7(〇)圖示出製造第6⑷〜6⑷圖所示結構之各 Hi施例中’後續層會被製設並黏接於先前 2積^的底4除了第7(b)圖所示的犧牲材料外，當示出目 尤積層上的結構材料和犧牲材料時，該結構材料會被完 :不出’而難材料僅有外部輪廊會被示出。在-目前沈 f貝層上#何沈積結構材料和犧牲材料的順 在變化實施例中，哕久柯远 β各枓層可被重疊或併排沈積。於本申^^ A brain can be programmed to control the contact ^ placement 'fixed device and so on, and then the fixed installation is formed to operate. 15 1244512 The second aspect of the present invention provides an electrochemical manufacturing method for making a structure from a plurality of adhesive layers, including (A) selectively depositing at least a part of a material layer on a first On the temporary substrate, the first temporary substrate may include a pre-deposited material; and (B) making a plurality of layers such that subsequent layers are immediately adjacent and adhered to the 5 pre-deposited layer; and (C) after making the majority layer A second temporary substrate (including a dielectric material) is fixed to at least a part of the layer of the structure, and at least a part of the first temporary substrate is removed from the structure, and then a structural substrate is fixed. The material is at least part of a layer of the structure, which at least partially overlaps the position where the first temporary substrate was fixed. A fourth aspect of the present invention provides a structured electrochemical manufacturing method made of a plurality of adhesive layers, including: (a) selectively depositing a portion of a material layer on a sacrificial substrate, The temporary substrate may include previously deposited material, (B) manufacturing a plurality of layers such that each subsequent layer is in close proximity and adhered to the previously known layer, wherein the manufacturing includes repeating the operations (A) a plurality of times; (C) during fabrication After a plurality of layers, a structural substrate (including a plurality of materials and / or a patterned structure) is fixed to at least a part of the layer of the edge structure, and at least a part of the temporary substrate is removed from the structure. A fifth aspect of the present invention provides a chemically-manufactured method for fabricating a plurality of adhesive layers. The method includes: (A) selectively depositing a portion of 20 to 1 part of a material layer in a first On a temporary substrate, the first temporary substrate may include materials such as Shi and Yue You; (B) manufacturing a plurality of layers such that subsequent layers are close to and adhered to Shi and / deposited layers; and (C) in process After forming a plurality of layers, a second temporary substrate (which includes a plurality of materials and / or a patterned structure) is fixed to a layer of the structure, and a portion thereof, and the structure of the first temporary substrate is removed from the structure. At least one 16 1244512 parts, and then a structural substrate is fixed to at least a part of a layer of the structure, which will at least partially overlap the position where the temporary substrate was fixed. The sixth aspect of the present invention provides an electrochemical manufacturing method for manufacturing a multi-segment 3D structure, at least one of which is made of a majority of adhesive skin 5; the method includes ... (A) Making at least one section of the multi-segment structure includes: (1) selectively depositing at least a portion of a layer on a substrate, the substrate may include previously deposited materials; (2) manufacturing a plurality of layers The subsequent layer is next to and adhered to the previously deposited layer, wherein the manufacturing includes repeating the operation many times; (B) providing at least one additional section of the multi-segment structure; (c) solidifying at least 10 sections. Connected to the at least one additional segment to form the multi-segment structure. Further aspects of the present invention will be more clearly understood by those skilled in the art upon reference to the disclosure. Other aspects of the invention may include combinations of the aspects of the invention described above, and / or various features of one or more embodiments. Other aspects of the invention may include buds for performing one or more of the above-described inventive methods. These other aspects of the present invention can provide different combinations of the various aspects described above, as well as other structures, structures, functions & relationships, and manufacturing methods that are not specifically described above. b. Brief description of the drawings. Figures 1 (a) to 1 (c) schematically show the side view of a door cover 20 with a CC cover plating method; and Figures 1 (d) to 1 (g) are A side view of the different stages of the plating method using different types of CC covers is schematically shown. Figures 2 (a) to 2 (f) schematically show side views of different stages of a chemical manufacturing method used to form a specific structure, in which a sacrificial material is selectively deposited and a structural material is Covered surface is deposited. 17 1244512 Figures 3 (a) to 3 (c) are schematic side views of various sub-combination examples that can be used to manually implement the electrochemical production method shown in Figures 2 (a) to 2 (f). Figures 4 (a) to 4 (i) schematically show that the first layer of a structure is made by using an adhesive cover plating method, in which an overlying deposition of a second material will cover the first material 5 at each deposition position. Between the openings and the first material itself. Fig. 5 is a flowchart showing the basic operation of a preferred embodiment of the present invention. Figures 6 (a) to 6 (c) show a structure example made according to a preferred embodiment of the present invention, wherein Figures 6 (a) and 6 (b) show two different perspective views of the structure, Fig. 6 (c) shows a side view of the structure. 10 Figures 7 (a) to 7 (0) show the procedures for making the structures of Figures 6 (a) to 6 (c) from a plurality of adhesive layers according to a preferred embodiment of the present invention. Figures 8 (a) to 8 (d) show one variation of one of the last layers of the structure made in Figures 6 (a) to 6 (c), and how the permanent substrate is mated to the material layer. Figures 9 (a) to 9 (e) show the 15 steps when implementing one embodiment of the present invention. Fig. 10 provides a flowchart of the basic operation of the embodiment of Figs. 9 (a) to 9 (e). Figures 11 (a) to 11 (j) illustrate various operation steps performed when implementing an embodiment of the present invention. 20 Figure 12 provides a flowchart of the basic operation of another embodiment of the present invention. Figures 13 (a) to 13 (c) schematically illustrate the process of transferring a structure 702 from a first substrate 704 to a second substrate 706. Figures 13 (d) to 13 (e) are schematic side views of a structure and a substrate having a correction structure capable of strengthening the fixing. 18 1244512 Figures 14 (a) to 14 (c) schematically show that a manufacturing method can modify one of the structures. The structure of the fixing layer includes the groove shown in Figure 13 (d). Figures 15 (a) to 15 (15) schematically show that a manufacturing method can modify the structure of a fixing layer of a structure so that it includes a fastening groove to strengthen the connection between the structure and the substrate. [Embodiment] Detailed description of the preferred embodiment 1 (a) ~ 1 (g), 2 (a) ~ 2 (f), 3 (a) ~ 3 (c) The figure shows a conventional electrochemistry Different characteristics of the system. Other electrochemical manufacturing technologies were disclosed in the above-mentioned US Patent No. 6027630, each of the previously published materials, and each of the other patents and patent applications attached to it. , And various methods described in the patent application, such as the combination of health, or professionals can be inferred from the insiders disclosed in this case. All 5H Temple technologies can be combined with the different embodiments of the present invention disclosed here to produce a better embodiment. There are also other embodiments that can be derived from the combination of various conventional examples disclosed herein. Figures 4 (a) to 4 (i) show the stages of forming a single layer in a multilayer process, in which a second metal is deposited on a first metal and in the openings of the first metal, The deposits form part of the layer. In Fig. 4 (a) 20 ', there is no side view of a substrate 82, and a patterned photoresist 84 thereon will be formed as shown in Fig. 4 (b). In Fig. 4 (c), a photoresist pattern is formed by curing, exposing, and developing the photoresist. The patterning of the photoresist 84 causes openings or pores 92 (a) to 92 (c) and the like to extend from the surface 86 of the photoresist to the surface 88 of the substrate 82 through its thickness. In Figure 4 (d), a metal 94 (such as 19 1244512 nickel) has been plated in the openings 92 (a) ~ 92 (c). In FIG. 4 (e), the photoresist has been removed from the substrate (for example, chemical stripping), and the area on the substrate U that is not covered by the first metal 94 is exposed. In FIG. 4 (f), a second metal 96 (such as silver) has been electroplated to cover the entire five exposed portions of the substrate 82 (which is conductive) and the first metal 94 (also conductive). )on. The fourth (magic diagram shows that the first layer of the structure has been formed, which is made by flattening the first and second metals to a height to expose the first metal and setting the thickness of the first layer. In Figure 4 (h), the steps in Figures 4 (b) to 4 (g) are repeated a number of times to make a multilayer structure as shown in Fig. 4, where each layer contains two materials. One of the two materials will be removed as shown in Figure 4 (i) to form a required 3D structure 98 (such as a component or device). Although the embodiments disclosed are mainly related to Focused on conformable contact hoods and hood plating operations, but the various embodiments, variations, and techniques disclosed can also be applied to hood bodies and hood plating operations (i.e., operations using hood II such as Yan Hai, These masks experience 15 due to the fact that the substrate is at least partially masked because it is near the substrate, even if it is not in contact with the substrate). The cover body and the operation according to the scale cover body), and the bonding cover and the cover plating operation (that is, the cover body bonded to the substrate and the operation using the cover body, the substrate (Selective deposition or etching will occur at the non-contact area.) Figure 5 shows a flowchart of the basic operation of a preferred embodiment of the present invention. The process starts at operation 1 () 2, which provides a substrate, A subsequent layer of deposited material will be added to the substrate. This substrate is typically made of a conductive material, which can be electrodeposited, but can also be a dielectric material on which a conductive material has been deposited. Seed layer. 20 1244512 The process continues to operation 104, where a layer is deposited on the substrate or a previously formed layer that has been placed on the substrate. According to some embodiments of the present invention The deposited material layer will contain two or more materials, one or more of which will be patterned to give a shape required for the structure to be made, while the other one or more materials will be shaped like The sacrificial material will be removed from the structure after the material layer is manufactured. A preferred embodiment of the present invention is used to separate the structure from the substrate (ie, the temporary substrate) made by the structure. And because it is best to make the substrate a different structure from the sacrificial material Material, so in some embodiments, the first or more 10 layers deposited on the substrate may be composed of only the sacrificial material. Also, in a preferred embodiment of the present invention, The substrate from which the structure is made is not the permanent substrate to which the structure is to be fixed, so it is preferable in some embodiments that the first layer (of the structure) deposited is the most relative to the permanent substrate of the structure. The last layer, and the last layer deposited is the first layer relative to the permanent substrate system 15. In other words, in some embodiments, the layers of the structure are preferably deposited in the reverse order. Electrochemical manufacturing method used It can be similar to those shown in Figures 1 (a) to 1 (c) and 2 (a) to 2 (f), or another method disclosed in US Patent No. 6027630, or in each of the foregoing disclosures A manufacturing method described in the materials, or a manufacturing method described in one of the patents or applications in the attached 20 patent and application report, or a variety of methods described in the published materials, patents, and applications A method of combination, or a method known or inferred by professionals. Of course, these structural parts can also be made by other 3D molding or manufacturing methods. After depositing one layer, the process will proceed to block 106, where 21 1244512 will be checked if the last layer of the structure has been made (that is, in some embodiments of the present invention that will contact a permanent substrate— Floor). If the answer is ‘‘ No, then the system will perform S and V for 104 before depositing. If the answer is "yes," then the process moves to operation 108. The / 1 operation 108 is to fix a permanent substrate (such as a dielectric material) to the last deposited layer of the structure. The fixation can be borrowed from one Adhesive to achieve, such as "feel: [type adhesive '-heat-sensitive adhesive, or-radiation-curable adhesive (provided that the substrate can transmit appropriate radiation). The adhesive can be applied in f ways known to professionals (such as coating, spin coating, spraying, etc.). The bonding can also be accomplished by non-adhesive bonding techniques, such as surface welding, sintering, welding, ultrasonic welding, vibration welding, and so on. After the permanent substrate and the deposition material layer are fixed together, the process will proceed to operation 11G 'where-the permanent substrate and the material layer will be separated from the temporary substrate, and all the sacrificial materials will be removed. . If one or more layers of sacrificial material are interposed between the temporary substrate and the structural material, or if the temporary Wei material is made of a sacrificial material or by a money engraving agent that will be used to selectively isolate the sacrificial material When other materials are attacked, the dispensing process can occur as a natural part of the removal process of the sacrificial material. ) 纟 In a modified embodiment, the three tasks in operations 1 () 8 and 11 () can be performed in a different order of 20, for example: 连结 first connect and then separate and remove _ animal materials; ⑺ first connect ' Separate and then remove; (3) Simultaneously separate and remove and reconnect; (4) Remove, then connect, and then separate. Figures 6⑷ to 6⑷ show an example of a structure (for example, a switch) made according to a preferred embodiment of the present invention. Two different perspective views of this structure are shown in Figs. 6 (a) and 6 (b), and a side view is shown in Fig. 6 (c). The overall structure 22 can be seen in FIG. 6 (a), and the structure is fixed to the permanent substrate 124. Figure 6 (b) shows a part of the structure 122 when it is fixed to the permanent substrate 124, but it can be seen that when the structure is manufactured and fixed to a temporary substrate such as 7⑷5 to 7 (n) The material layer process shown in the figure. As shown in Figure 6⑷, this structure is composed of ten layers 201 to 210. 10 15 20 Figures 7⑷ ~ 7 (〇) show that in each Hi embodiment where the structures shown in Figures 6⑷ ~ 6⑷ are manufactured, 'the subsequent layers will be made and glued to the bottom 4 of the previous 2 products except for the 7 ( b) In addition to the sacrificial material shown in the figure, when the structural material and the sacrificial material on the screen are shown, the structural material will be finished: not difficult, and only the outer rim will be shown. In the present embodiment, the deposition of the structural material and the sacrificial material is smooth. In a variant embodiment, the various layers of the 哕 Jukeyuan β may be overlapped or deposited side by side. Yu Benshen

請案中，除非内容需I , 而要—不同的詮釋，否則當一沈積被描 述發生於前一沈積你μ 、上日守’並不需要作成料層走向的絕對 -斷"而僅應陳明沈積順序的相對關係。 f 7⑷圖:出该製程以一暫時基材212來開始。 斤# ()圖丁出。亥暫時基材會被佈設一犧牲材料的塗層 或第/尤私、層2U。該犧牲材料層211在該製程之一稍後步 驟時可容許該結構材料與暫時基材分離。當然，在實際操 作中’一個以上的該層211亦可被製成，或其厚度可被調整 以便在嗣後步驟中能夠容易分離。 第7⑷圖示出~層210的結構材料210,係由-虛線來被 圖案化，而該虛綠矣-+、，上 表不亦冒存在之犧牲材料的邊界。 23 1244512 第7⑷〜7(1)圖係⑽㈣斗層2〇9至2〇1之各接續沈積 層。每一目岫沈積層之結構材料2〇9，至2〇1，的圖案亦隨著該 層之犧牲材料的外靡線被示出。先前沈積層則被示為材料 貝〜塊而’又有示出結構材料和犧牲材料的圖案化區別。 5 帛7(m)及7(n)圖示出該永久基材200固接於⑴各料層 2〇1〜210的疊塊，⑺該釋離層m，及_暫時基材犯。 第7(m)圖中將該部份形成結構之各元件示出如實心方塊， 而第7⑻圖示出該犧牲材料和永久基材宛如透明狀，因此可 以看出各層及結構材料2〇1 _〜21〇,的製型。 10 第7(〇)圖不出已釋離的結構材料201，〜210,被黏接於 該水久基材200。該基材係被示如透明狀以便說明，但其可 為透明（如玻璃）或不透光的，其中有些用途可能需要透明材 料(例如當結構包含一掃描鏡而可接受穿過該基材的輻 射，並由該基材回送穿出時）。該暫時基材可隨該犧牲材料 15被除去，该犧牲材料能以—餘刻劑(例如如响c_38)來選 擇性㈣，其對賴牲㈣(如銅）有藝性，但不會解體結 構材料(如鎳）。該犧牲材料餘刻劑可包括一防雜劑或類似 物，以確保其不會攻擊該結構材料。 第8⑷〜8⑷圖*出製造第6(a)〜6⑷圖之結構的最末 20層之變化例，及該水久基材如何配接該料層的變化劑。第 8(a)圖示出該最末層僅包含該結構材料2〇1，。第阶)圖示出 該永久基材不僅被製設或黏接於該最末層底部，亦設在該 最末層的側邊，因此該最末層的結構材料會變成至少部份 埋入該基材中。第8⑷及8⑷圖示出該所形成結構之二立體 24 1244512 圖。如圖所示，該結構材料201，係被埋入該基材中，故只 有十分之九的原始結構材料層延伸於該永久基材的表面 上。該結構材料201’受該基材的包圍能以多種方式來達 成。舉例而言，取代該基材呈一預製片體的形式來黏接於 5該等料層，其亦得為可流動材料的形式而能被模製成型來 埋圍该結構材料，並具有一所需厚度延伸超過最末層結構 材料的表面。而在另一例中，該基材仍可呈片狀而黏結於 最末層的結構材料201’，但該最末層上未被沈積犧牲材料 或犧牲材料已被除去的部份，則可充填一環氧樹脂或其它 1〇之可流動7可固化的材料。該永久基材會被設於定位，而該 树月曰或其它材料的硬化不僅會填滿結構材料2〇1，周圍的區 域，亦會造成該等料層與該基材之間的黏接。 上述實施例亦具有各種變化例。即使在未將該最末一 層側邊的基材加以成型時，其仍可使用一可成型的材料， 15即不同於一材料片而由一暫時可流動的材料來製成該基 材。接觸墊及通路可由該結構材料來製成，且它們可延伸 至该基材表面的所需位置，或除了各所需的接觸點外皆被 該基材的材料所包封。該犧牲材料之選擇性部份蝕刻可在 該永久基材的固接或製設之前來進行。各料層可被餘刻至 20小於-層厚度或大於一層厚度的深度。在某些實施例中， 遍刻/木度可令部份的結構材料能完全延伸穿過將被成型 的基材，而來形成由該基材底部突出的互接物。在需要具 有互接物延伸穿過基材底部的實施例中，及 產生該等延伸的情況下，該基材的背面乃可被== 25 1244512 該結構材料曝露為止。該基材並不一定是要平坦的，且其 侧向延伸亦不需要對應於該等料層。 假使部份蝕刻至超過一層厚度的深度，則最好該結構 材料的圖案能保持固定圖案，但也許最深的料層將會被該 5部伤餘刻所曝露。此將有助於確保更均一的餘刻深度，因 為該犧牲材料將不會被結構材料的延伸區域所屏蔽。但 是’在該蝕刻深度較不重要或預期一不同的結構圖案將會 造成一所需之蝕刻圖案的實施例中，則結構材料的圖案化 將不必有該限制。 10 在某些實施例中，不同於該暫時基材與永久基材係被 ό又在4專沈積層的相反側上，該永久基材亦可被設在垂直 於该暫時基材的方位中。換言之，該永久基材亦可被製設 在4多數沈積層的側邊。 在某些實施例中，並不將該永久基材固接於該疊層相 15對於暫日守基材的相反面上，該暫時基材會先被去除而該永 久基材再黏接於其位置上。此係可令該暫時基材或其最頂 面由一種材料來製成，其能被選擇性蝕刻或由該等料層被 除去’且最好不會損及該各層的結構材料或犧牲材料，而 來達成。又在去除之後，該結構的最底層將會曝露，且該 20 永久基材（例如介電基材）將會固接其上。 當需要將該永久基材設入某些被該暫時基材所佔的位 置時，在某些實施例中，可能需要先將一第二暫時基材設 在該豐層相對於第一暫時基材的相反面上，然後該第一暫 時基材可被除去，再固接該永久基材，接著再除去第二暫 26 1244512 能被保留 於本發明的某些實施例中，該永久基材可非為一介電 材料而以某些其它材料來取代。例如，該永久基材可由一 導電材料製成，而能被容易地電沈積。 …雖於此係使用永久材料，，乙詞，但應請瞭解並非意指 〆X久材料存在歷_結構的整個壽命，而是假使 10 其構成該結構的—部份，則至少應能供㈣該結構使用壽 命的某些部份。 在本發明的某些實施例中，當沈積該等疊層時亦可能 不使用犧牲層。在某些實施例中，各層的製造得以單一或 多次的選擇性沈積來完成，且可能有一或多次的覆面沈積 和一或多次的平坦化操作。 15 本發明的某些實施例可提供來將電化學製成的結構 (例如使用可順形接觸罩鍍技術或黏接罩鍍技術）固接於可 此包含主動it件的基材上。此係示於第9⑷〜9⑷圖的實施 例中，其中有一電化學製成的結構會被固接於一壓電元 件，並結合該二者而形成一可操作的壓電裝置。 2〇 在第9(a)圖中，一結構包含結構材料304被一犧牲材 料306所包圍。該結構3〇2最好係以電化學製法由多數黏接 層所製成。該結構302係被製設在一釋離材料3〇8上，其則 固接於一基材312。該釋離材料308可相同於犧牲材料 306’，或其亦可為另一種材料而能藉蝕刻或熔化(例如為一 27 1244512 焊劑）或去除而被分離。該釋離材料308可在該結構302開# 電化學製造之前先被覆設在一基材312上，或亦能以該電4匕 學製程的一或數種最先沈積物來製成。該基材典型係為〜 導電材料，但在某些實施例中其亦可為介電材料，並能^皮 5 覆設一導電材料的晶種層。 在第9(b)圖中，一預製的元件或構件322係被示出位於 该結構302上方。该預製構件322已準備固接於該電化學制 造結構302。該構件322係固設於一裝置基材324。通常，該 裝置基材324會形成該裝置的最終基材，該裝置係為該構件 10 322與該結構302之結構材料的組合物。視一特定裝置的最 終需求而定，該裝置基材324可採用任何所需的性質（例如 其可為一導體，一介電質，一透明材料，或一撓性材料等 等）。在本例中，該裝置基材324為一介電質，故其可提供 電隔離。在該裝置基材324上，有一金屬元素326會被圖案 15化，其上有一壓電材料328的區域會被圖案化，該壓電材料 上又有一黏劑330(若有需要可為導電的）會被圖案化。一適 當的黏劑要能對該結構3〇2的結構材料3〇4具有良好的黏 性。該金屬元素326會被提供並圖案化來作為一電極以作動 該壓電材料，並作為一線路來將該電極連接於一電源。 :〇 在第9(C)圖中，該預製構件322係被黏劑33〇黏接於該結 構302。在第9⑷圖中，該釋離材料3〇8已被除去。在第9⑷ 圖中，该犧牲材料306已由結構材料304被除去，遂使構件 334與該結構3〇2釋離而形成該完成的裝置336,其係為構件 334，322與裝置基材324等之組合物。 28 1244512 第10圖為一流程圖示出第9(a)〜9(e)圖之實施例的製 程步驟。在第10圖中，該製程會在方塊4〇2和406所示的兩 點來開始。方塊402係提供一基材，其能與一製設其上的構 件分離。該基材與該構件可因該基材上具有一釋離層，或 5因一釋離層將會被設在該基材上，而能夠分離。 方塊406係提供一第二構件，其會具有一所需形狀或由 多種所需的材料來製成。該第二構件會具有一表面能被固 接於方塊402所提供之第一構件的表面上。 方塊404係在該基材上製設一或多層，而來形成所要製 10 k之一 I置的弟一構件（即一部份）。在製成第一構件的過程 中，該構件可被一犧牲材料部份地包圍，該犧牲材料最後 會由該料層的構件部份被除去。該第一構件會具有一表面 能被黏結或固接於第二構件。該二方塊404和406係為方塊 208之操作的起始點。 15 在方塊408中，該第一及第二構件的一或二者將會藉附 加一黏劑於其至少一連結表面上，而來準備互相黏接。當 然在變化實施例中，方塊4〇8亦可能非為該製程的一部份。 例如，在某些實施例中，一黏劑可能為所提供之第二構件 的一部份。 20 該製程會由方塊408移向方塊410，其中該二構件將會 互相黏接。此黏接可使用感壓黏劑，熱熔黏劑，或其它專 業人士所習知的手段來達成。 該製程嗣會移至方塊412，其中該第一構件會與其所附 設的基材分開。 29 1244512 蚋该製程會移至方塊414，其中該第一構件會與所要製 成的取終裝置之非保留部份的任何犧牲材料分離。 接著该製程會移至方塊416，其中會進行附加的製造操 作或在方塊414的操作中被釋離的裝置可被拿來使用。 5 在變化實施例中，方塊414和412的操作順序可以相 反。又在其它實施例中，該二方塊414和412的操作係可同 日寸兀成。又在另外的實施例中，該方塊412及/或414的操作 係可在方塊4G8與410的操作之間來進行。在參閱本文之後 專業人士將可容易推知各種其它的變化例。 10 &本發明的某些實施例中，被IU接的基材係可為一被 動疋件，但與其固接的結構可具有電化學製造部份及以其 它沈積或圖案化技術來製成的部份。該等部份之-或兩者 可μ主動構件。此係被示於第u⑷〜η⑴圖的實施例中。 第u(a)〜11⑴圖示出本發明的另一變化實施例，其係 15使用相同的知作來製成多數料層，再使用不同的操作來製 成結構的添加部份。第u⑻圖示出第一結構5〇2 似於第9⑷圖。 ㈣ 在弟 ll(b、d? V )圚中，一壓電材料528已被沈積於該結構5〇 的頂面（即取末層）上，且一光阻52〇已被沈積在該 90 F。 个以十 在第11(c)圖中， 出。此壓電材料的圖 阻520,再用其作為— 變化製成中，例如， 該壓電材料528之一所需圖案乃被示 案化可如下來完成：首先圖案化該光 圖案來選擇性蝕刻該壓電材料。在_ 該壓電材料可被以上位去除（lift_Qff) 30 法來圖案化。 第U(d)圖不出—可擇步驟 兩水平，利用一介带44^、 采將邊部份形成裝置的表 空隙，而㈣成二/532填馳刻該壓電材料所造成的 能需要，或至少㈣=的高度。在某些變化實施例中，可 化。 八好能將該組合的介電及壓電材料層平坦 及介：：示出下—層沈積後的結構，其會在該等壓電 ^材枓頂面上提供-金屬534。 10 的圖7^所沈積之金屬被圖案化的結果。該金屬 的圖案會破選擇來形成該壓電、 路。該金屬的圖案化能以多來^収互接軌 义、+、田十 夕禋万式來進行，例如，其能以 15 20 來圖案化該壓電材料的方式來進行。第剛圖示出 以一介電材料536(其可相同於介電材料叫來填滿金屬層 内之工隙的結果。料㈣的域亦可使㈣同於填滿該 壓電材料層之空隙的方法來完成。例如，—材料可被大量 沈積、配佈、固化，然後平坦化來產生—所需厚度且均勾 的料層。在第u⑻财，-裝置歸538係被覆設在該金屬 及介電層上。該基材可具有任何所需的特性，而在本例中 係為-介電質。在第u⑴圖中，—釋離材料5⑽已被除去。 取後，在第11⑴圖中，-犧牲材料5〇8已被除去，而形成— 釋離的裝置，其可進行附加的處理操作或被拿來使用。 在一最終的功能性裝置中，一穿過第9(e)圖之結構材料 304，或第11⑴圖中之504的連接物乃可被用來形成該壓電 元件的第二電極，以便製成一最終裝置。 31 1244512 第12圖為一流程圖示出第11(a)〜11⑴圖之實施例的製 程。該製程開始於方塊602，有一基材會被提供，其上會製 設一裝置。該裝置最後亦會被移轉至一不同基材上，該基 材得已設有一釋離層，或可在電化學製造第一或更多層時 5 再來添加一適當的釋離材料(例如犧牲材料）。 方塊604係使用一第一製法來製成一或多層（例如以電 化學製造），其將會形成該裝置的一部份而可被一犧牲材料 所包圍。 方塊606係使用至少一不同的沈積法來進一步構建及 10 圖案化該結構。在某些實施例中，附加的電化學製造操作 將可被用來完成該結構，其會包含該未釋離的裝置。 方塊608係將一黏劑佈設在所形成結構的最末層上，及 /或一要被連結於該結構的基材上。該黏劑的使用可能需要 或可能不必依據該基材的構成材料，以及用來接合的方法。 15 方塊610係在該結構的最後形成層上製成一基材，或將 該基材黏接於該最後形成層上。 方塊612係將该結構與其所製設的原始基材分離。 方塊614係將该結構與任何非屬最終裝置之保留部份 的犧牲材料分離。 20 方塊616係進行任何附加的製造操作，或將該裝置拿來 使用。利用第1〇_流程圖，各種變化操作將可被實施， 且可改變各操作方塊的順序。 有二附加的實施例係被示於第13(a)〜13(e)，14(a)〜 14(c)及15⑷〜15(f)圖中。！亥=附加的實施例係示出基材轉 32 1244512 換技術，其包括增加該結構與黏接基材之間的表面積（接 面），或在該結構中製成能與交換基材扣接的細構。 第13(a)〜13(c)圖不出一用來將一結構702由一第一基 材704轉換至一第二基材7〇6的方法，其中該結構與第二基 5 材之間的接觸面積係為平坦的，故沒有增加的表面積或扣 接部份等存在來協助改善其黏接。 第13(d)圖示出一修正的結構702’和修正的基材706,， 其中在該結構之一平坦表面上具有凹槽缺口，而在該更換 基材或一黏劑層中具有凸部等可嵌入該等凹槽内來加強該 10 結構與基材之間的黏合。 第13(e)圖示出一修正的結構702”黏接於一修正的更換 基材706”，其中該結構包含具有倒削部的凹槽，而該更換 基材或一黏劑的材料會設入其内，以使該結構和基材能藉 它們之間的機械性扣接來加強黏合。 15 第13(d)圖的修正結構能以許多不同的方法來實施。其 中之一製法係不於弟14(a)〜14(c)圖中。 第14(a)圖示出該結構之最後兩層712和714已被製成， 而該料層714尚未扣接於一基材。 第14(b)圖示出該二層712與714，之另一圖，其中該層 2〇 714’已被修正而含有孔洞、凹槽、隙縫等設在結構材料718 中。該等孔洞和凹槽可被填滿一犧牲材料72〇，來作為該製 程的-部份。第14(c)圖則示出該製程在第14⑼圖所示的犧 牲材料720由料層714,的開孔722中除去之後的狀態。 在某些貫施例中，在料層714，中的開孔可在該料層製 33 1244512 程中中藉修爛_編 施例中’該料層m，的開孔可在該層製二〜 需位置處選擇性卿洞於該料層714中而:::::所 刻製程可使用接觸罩或輪罩來進行。假使;^Γ 結構的其”域除絲 ^補慮會由該 除將可大量地進行。或者，= 犧牲材料72_刻去 來完成刻亦可使用-或多個罩體 =亦=至少會罩蔽該犧牲材料不要被除去的區 10 15 20 的料層中之後蚊^结構材料。當該等開孔被餘入用來黏接 故 * ，—黏劑或可流動的基材材料剩可被佈設， 減)土。^接於該結構或固化地接_結構（此會造成 來-在例中’取好該犧牲材料係在黏接操作之前 = 不會被峨結構材料部份之外側區域 紗構之枓之此等黏接和去^的順序將可改善該基材 =^黏接定位，及/或可協職制_誠可流動 ::θ ;4移人該結構周圍的區域中。在其它實施例中， 可此取好將该結構材料區域外部的犧牲材料除去，例如， 因為==材料可能在黏接之前比黏接之後更容易接近。 來進^在其它的實補巾，外部輯㈣騎在黏接之前 以、二僅疋因為所要黏接的結構對正確定位的不均一性 及/或對二隙破可流動之基材材料或黏劑部份或完全地填 禺二大的包容性。修正該結構的最末層（或最後數層） 〜旱的資料，乃可依據設計者修正該所需結構的CAD 槽指令，或益 + 曰—貧料處理程式其會執行各種B〇〇iean操作（例 34 1244512 如浸餘或擴張操作），並依據固定或使用者可設 如固接位置和尺寸的固定方格，其能被疊覆於^數(例 結構材料的正確位置上)來為之。該資料處理操二=之 被傳入該料層資料中的結構資料，或依據保留在—已 5的結構資料而來進行。 。式 在第I3⑷圖的結構和基材之間的轉換區之扣持功能。 猎多種方式來獲得。例如，一钱刻操作可被使用，其具3 會將餘入的材料倒削的趨勢。該等倒削亦可為將 接觸罩壓入正被形成之孔内的結果，該罩體可保護該等門 10孔的侧壁上部達到某一深度，而在該點處水平的餘刻即; 形成一倒削部。該等扣持功能亦可藉修正該結構的最後二 或更多層上之結構材料的圖案而來獲得，其中該接觸層（及 可能一或多個添加層）在結構材料中將會具有較小的開 孔，而在-或多個先前形成層中將會具有較大的開孔。該 15等在不同料層中之較小及較大的開孔嗣會在料層製程中被 填滿犧牲材料。該犧牲材料能在料層製成之後以如同前於 第14(b)和14(c)圖中所述的方式來被除去。一種製造該等扣 持部，倒削部或互鎖結構之方法例乃被示於第15(a)〜15⑴ 圖中。 20 第15(a)圖示出一以電化學製造法製成之結構例的最後 五層，該五層皆具有相同的構造。如圖所示，該結構包含 結構材料區752及犧牲材料區754係在結構本身的外圍。 第15(b)圖示出該電化學製成結構的最後數層，其中最 後二層的構造已被修正而在其結構材料中含有開孔，其具 35 1244512 有倒切部或扣持結構。如第is⑻圖所示，該等扣持結構加 和764以及導至它們的通道772和774會被暫時地填滿一第 犧牲材料其可與第一犧牲材料754相同或者不同。 第15(C)圖不出該等凹槽或扣持結構762和764及其通道 5 772和^74中的第二犧牲材料已被除去。 第5(d)圖示出该結構已被覆設一黏劑774,且一轉換基 材776位於黏接位置上方。 弟15(e)圖示出該轉換基材776已被降低至定位並被黏 心4黏接於该結構的狀態。不僅在該基材與 !〇發生黏接，而且力朴w t 间曰 #二 在黏劑與該結構之間亦會發生互扣鎖接， 又右雜贿基材具有比對該結構更佳的黏接特性，則該 組合=基材/結構系統之整體牢固性將能被改善。 弟15_示出該外部的犧牲材料754已被除去之後的 15 20 實rl!此ΐ鎖方式以及增加表面積的方法可有許多的變化 I ^ 紅方法巾，其交接或互扣元件的高度可由一 ::構::伸”層的厚度。若不使用黏劑來將該基材 門° : 4一起’則可流動的基材材料亦可填滿該等 開孔，然後令其固化。 在其它實施例中，該基材本身亦可包含開孔或扣持細 而有助於—黏劑或填充材料的抓持。又在其它實施例 ，該等扣持細構並餘何單卿錢基材與結構間之扣 二的細構’而為二或更多能產生扣接形態的結構組合 (列如此以不同角度伸入該結構内的直孔等）。 36 1244512 又在其它實施例中，該二要被固接者亦可非為一多層 結構與一基材，而是包含一或多個多層結構結合一或多個 其它元件或構件，其係可為或不是多層結構，並可為或不 是基材狀。 5 一可形成互扣加強黏接結構的實施例係可概述如下： (1)獲得一所要製成之結構的資料檔；（2)修正該資料而使其 在最後一或多層中含有一或多個支道或通道，並在緊鄰該 含有通道之各層的一或多層中能包含凹槽或扣持結構；（3) 在一第一基材上製成該結構；（4)蝕掉該等通道或扣持孔的 10 凹槽；（5)佈設一可流動材料於具有該等通道之結構的表 面，若一分開的基材要以該可流動材料來黏接，則其可為 一黏劑，或其得為一可固化材料而能被成型為所需基材的 形狀，（6)使用該黏劑或固化該基材材料以黏接該基材和該 結構，來形成一黏接於該結構的基材；及(7)假使需要且未 15 先前去除，則除去任何殘留的犧牲材料，而使第一基材由 該結構釋離。 許多可能的變化實施例另外包含：（1)使用單一犧牲材 料來填滿該等開孔，以及該結構的外部區域，或亦可使用 兩種以上的犧牲材料來為之；（2)在該結構材料中形成開 20 孔，而使一犧牲材料不需暫時地充填該等開孔；及/或（3) 使用多種結構材料。導至該等凹槽或扣持細構的通道或支 道可具有任何所需的長度，它們可有不同的截面尺寸或不 同的長度。該等凹槽或扣持細構並不一定要有與該等通道 不同的尺寸，因為它們亦可僅簡單地由該通道的位置岔 37 1244512 出，就此而論事實上它們更可具有較小的截面積；（5)在各 凹槽與通道之間並不需要一對一地對應；（6)該等凹槽本身 可具有不同的高度，或被設在該結構中的不同深度，或具 有不同的截面尺寸。 5 在其它的變化實施例中，取代貫入一結構元件内部的 倒切部或扣持細構，其亦可在結構材料的側壁區域上形成 倒切扣槽，該等扣槽能被填滿一黏劑或基材材料，而在與 該結構材料之其它部份上的反向扣槽配接時來形成互鎖元 件。 10 在某些實施例中，多層結構能由一“頂”層（即預期的最 末層）來開始製造，其係鄰接於一暫時基材，或亦可能以一 或多層犧牲材料來與該暫時基材分開，然後附加在後續各 層上，直到第一層達到為止。在此情況下基材的轉換可直 接將該結構(例如永久基材）固接於最後形成層（例如預期的 15 第一層）上而來完成，然後，若尚未進行，則該暫時基材可 被除去。在某些其它實施例中，該多層結構可由預定的第 一層來開始製造，其能被直接形成於一暫時基材上，或被 一犧牲材料來與該暫時基材隔開，該犧牲材料可相同或不 同於形成含有結構材料之料層的一部份之犧牲材料。此構 20 建程序會由第一層逐進至最末層，且若需要則一或多層的 犧牲材料可被設在最末層上。設在最末層上的犧牲材料可 相同或不同於用來製成包含結構材料和犧牲材料之各層所 用的犧牲材料。若有需要，一第二暫時基材亦可固接於該 最末層或其上之料層。該第一暫時基材（即原始基材）嗣可被 38 1244512 除去。假使有任何犧牲材料層存在於該第—層底下，則它 們亦可被除去，然後以—永久（或結構)基材固接於該第— 層’嗣該第二暫時基材輯著任何尚未被除去的犧牲材料 來一起被除去。 一在某些實施例中，該結構材料可為硬質的，而在其它 貫施例中則可為撓性的。又在其它實施财，該永久基材 可為積體電路或其它電構件，而能以介電黏劑、線結、重 流焊觸點，及/或其它的導電或介電元件之—或多者來完成 固接。 10 專業人士在參閱本文之後將可推知許多其它的變化實 施例。更多的實_亦可由本案所揭之各種技術的組合來 形成。又更多的實施係可將本案所揭技術與下表之各專利 和申請案所述之内容組合而^成’其㈣容併此附送參考。 •美國專利申請案， 申請曰 美國專利申請公開 案號，公開日 Γ\Π / Α ί\^ Λ Γ\/^ 發明人，名暴 -—----~Ί • 09/493,496 2001.01.28 Cohen, Adam ~~~~- • 10/677556 2003.10.01 s有可承接構件之對準及/或扣持固定物辟 • 10/830262 Ί 2004.04.21 2^ 人，減 • (Docket P-US099 -A-MF) 2004.05.07 罩’配合介電片及域晶種層而可 猎十坦化；邛伤去除之電化學製造結構的方法，， * 2〇〇271〇7145 g?en等人，“結—方法及更 • 20030127336A1 2003.07.10 • 10/697597 2002.12.20 等人，包兮噴佈金屬或粉末塗覆製程的EFAB方法 • 10/677498 2003.10.01 gjen等人，夕孔罩及使用該罩來製造3]〇結構的方法和裝 • 10/724513 2003.11.26 Cohen等人非順形罩及用來製造3D結構的方法和裝置，， • 10/607931 2003.06.27 等人U小RF和微波構件及用來製造該等構件的方 39 1244512 • (Docket P-US093 -A-MF) 2004.05.07 Cohen等人，包括使用表面處理以減少超鍍及/吱在开 層3D結構時來平坦化的電化學製造方法，， 夕 • 10/387958 2003.03.13 • 2003-022168-A1 2003.12.04 ，造具有較佳表面光度^^^ .10/434494 2003.05.07 • 2004-0000489-A1 2004.01.01 我益口裝盒?觸罩祕 • 10/434289 2003.05.07 • 20040065555 2004.04.08 • 10/434294 2003.05.07 • 20040065550 2004.04.08 Gang Zhang ’ “具有強化後沈積 • 10/434295 2003.05.07 • 2004-0004001 2004.01.08 造设，“用來製 • 10/434315 2003.05.07 • 2003-0234179 2003.12.25 =跋r Α· • 10/434103 2004.05.07 • 2004-0020782 2004.02.05 • (Docket P-US105 -A-MF) 2004.05.07 cohen 等人，“用於~~ • 10/434519 2003.05.07 • 2004-0007470 2004.01.15 d來 • 60/533947 2003.12.31 Kumar等人，“_. .10/724515 2003.11.26 c〇hen等人，“包_ 學製造結構的方法，， 土何之不千仃配接之用來電化 本發明尚存有各種其它實施例。有^ 據本文的技術與附件之各種技術的組合。有些實施例可能 未使用任何覆©沈積製程及/或平坦化製程。某些實施例; 能包括在-層或多層上之多種不同材料的選擇性沈積。有 些實施例可能使用非電沈積的覆面沈積製法。有些實施例 40 1244512 二用鎳作㈣構材料，而其它實施顧可能使用不同的材 :宜例如金、《任何其它可電料的材料，魏與銅及/ =些其它的犧牲材料分開。有些實施例可能用銅作為結 ;;m有犧牲材料。有些實施财除去犧牲 =料箱而其它實施例則不會。在某些實施例中，若沈積係 二方《發生，峡物^柳_與該基材之 間的讀由該可順形材料表面移轉至其關邊緣時，則沈 積深度γ藉將該可順形接觸罩由該基材拉離而來增加。 10 夕^閱本文之後’專業人士將可容易得知本發明的許 多其:實_ ’設計變化和用法^因此，本發明並不受 限於前述的特定實施例、變化例和用途，而僅由以下的申 請專利範圍來限制。 【圖式1簡單^謂^明】 第1(a)〜1(c)圖概略地示出一 Cc罩鍍佈法之不同階段 的侧視圖，而第1(d)〜1(g)圖係概略地示出一使用不同類型 之CC罩的鍍佈法之不同階段的側視圖。 第2(a)〜2(f)圖概略地示出一用來形成一特定結構的電 化學製造方法之不同階段的側視圖，其中有一犧牲材料會 被選擇性沈積，而一結構材料會被覆面沈積。 第3(a)〜3(c)圖概略示出可用來人工實施第2(a)〜2(f) 圖中之電化學製法的各種次組合例之侧視圖。 第4(a)〜4(i)圖概略示出使用黏接罩鍵佈法來製成一結 構的第一層，其中一第二材料的覆面沈積會覆蓋第一材料 在各沈積位置之間的開孔以及第一材料本身。 1244512 第5圖示出本發明一較佳實施例之基本操作的流程圖。 第6(a)〜6(c)圖示出一依據本發明的較佳實施例來造 成的結構例’其中第6(a)及6(b)圖示出該結構之二不同的立 體圖’而第6(c)圖示出該結構的側視圖。 5 第7(a)〜7(0)圖示出依本發明之一較佳實施例由多數 黏接層來製成第6(a)〜6(c)圖之結構的各程序。 第8(a)〜8(d)圖示出製成第6(a)〜6(c)圖之結構的最末 層之一變化例，及該永久基材如何配接該料層。 弟9(a)〜9(e)圖示出當貫施本發明之一實施例時的各 10步驟。 第10圖提供第9(a)〜9(e)圖的實施例之基本操作的流 程圖。 第11(a)〜1 l(j)圖示出當實施本發明之一實施例時所進 行的各操作步驟。 15 第12圖提供本發明另一實施例之基本操作的流程圖。 第13(a)〜13(c)圖概略示出將一結構702由一第一基材 704轉接於一第二基材706的過程。 第13(d)〜13(e)圖概略示出具有可加強固接之修正構 造的結構與基材之側視圖。 20 第14(a)〜14(c)圖概略示出一製法可修正一結構之一 固接層的構造使其含有第13(d)圖所示的凹槽。 第15(a)〜15(f)圖概略示出一製法可修正一結構之一固 接層的構造使其含有扣接凹槽以加強該結構與基材的互 接0 42 25 1244512 式之主要元件代表符號表】 2…弟一材料 56…Y枱 4" ·第二材料 58,64…槽 6,82…基材 62…陽極 8…CC罩 66···電鍍溶液 10…絕緣體 68···支腳 12…陽極 72,74…框架 14…電鍍溶液 84···光阻 16…電解液 86,88…表面 18…電源 94,96…金屬 20…支撐結構 98…3D結構 22…沈積材料 102-110…製程之各操作步驟 26,92···開孔 122,302…結構 32…電化學製造系統 124,200···永久基材 34…基材固持次系統 201-210…各料層 36…CC罩次系統 211…犧牲材料層 38…覆面沈積次系統 212…暫時基材 40…平坦化次系統 304,504…結構材料 42…滑塊 306,506…犧牲材料 44···致動器 308,508…釋離材料 46…指示器 312…基材 48…載具 322…預製構件 52…抛光板 324…裝置基材 54…力枱 326…金屬 43 1244512 328···堡電材料 330…黏劑 334…構件 336…裝置 402-416···各製程步驟 502···第一結構 520…光阻 528···壓電材料 532,536…介電材料 534…金屬 538···裝置基材 602-614···各製程步驟 702…結構 704···第一基材 706···第二基材 712,714···料層 718,752···結構材料 720,754···犧牲材料 722···開孔 762,764···扣持結構 772,774…通道 776…轉換基材 44In the application, unless the content requires I, and a different interpretation is required, when a deposition is described as occurring in the previous deposition, μ, Nisshou 'does not need to make an absolute-break of the direction of the material layer, but only The relative relationship of Chen Ming depositional sequence. Figure 7: The process starts with a temporary substrate 212.斤 # () Picture Ding out. The temporary substrate will be provided with a coating of a sacrificial material or a layer of 2U. The sacrificial material layer 211 may allow the structural material to be separated from the temporary substrate at a later step in the process. Of course, in actual operation, more than one of the layers 211 may be made, or its thickness may be adjusted so that it can be easily separated in subsequent steps. Fig. 7 shows that the structural material 210 of the layer 210 is patterned by a dashed line, and the virtual green 矣-+, the above table also assumes the boundary of the sacrificial material that exists. 23 1244512 Figures 7 (a) to 7 (1) show the successively deposited layers of the bucket layer 209 to 201. The pattern of the structural materials 209, to 201, for each mesh deposition layer is also shown along with the outliers of the sacrificial material of the layer. The previously deposited layers are shown as materials and blocks, and there is a patterning difference between the structural material and the sacrificial material. 5 帛 7 (m) and 7 (n) show that the permanent base material 200 is fixed to a stack of ⑴ various material layers 2101 to 210, ⑺ the release layer m, and _ temporary base material crime. Figure 7 (m) shows the components forming the part as a solid block, and Figure 7⑻ shows that the sacrificial material and the permanent base material are transparent, so each layer and structural material can be seen. _ ~ 21〇, the model. 10 Figure 7 (0) does not show the released structural materials 201, ~ 210, which are adhered to the water-based substrate 200. The substrate is shown as transparent for illustration, but it may be transparent (such as glass) or opaque, and some applications may require transparent materials (for example, when the structure includes a scanning mirror that is acceptable to pass through the substrate). Radiation, and when looped back through the substrate). The temporary substrate can be removed along with the sacrificial material 15, which can be selectively sacrificed with an after-treatment agent (e.g., ring c_38). Structural materials (such as nickel). The sacrificial material finish may include an anti-doping agent or the like to ensure that it does not attack the structural material. Figures 8 (a) to 8 (b) show examples of the last 20 layers of manufacturing the structures of Figures 6 (a) to 6 (b), and how the water-based substrate is matched with the modifier of the material layer. Figure 8 (a) shows that the last layer contains only the structural material 201. The first stage) shows that the permanent substrate is not only made or bonded to the bottom of the last layer, but also on the side of the last layer, so the structural material of the last layer will become at least partially buried. The substrate. Figures 8 (a) and 8 (b) show the second three-dimensional view of the formed structure. As shown in the figure, the structural material 201 is buried in the substrate, so only nine tenths of the original structural material layer extends on the surface of the permanent substrate. Surrounding the structural material 201 'with the substrate can be achieved in a variety of ways. For example, instead of bonding the substrate in the form of a prefabricated sheet to adhere to the 5 layers, it must also be in the form of a flowable material that can be molded to surround the structural material, and A surface having a desired thickness extending beyond the last layer of structural material. In another example, the substrate can still be sheet-shaped and adhere to the last layer of structural material 201 ', but the sacrificial material on the last layer has not been deposited or the portion where the sacrificial material has been removed can be filled. An epoxy or other 10 flowable 7 curable material. The permanent substrate will be set in position, and the hardening of the tree or other materials will not only fill the structural material 201, the surrounding area, but also cause the adhesion between the material layer and the substrate. . The above embodiment also has various modifications. Even when the substrate on the side of the last layer is not formed, it can still use a moldable material, 15 which is different from a sheet of material and is made of a temporarily flowable material. The contact pads and vias can be made of the structural material, and they can be extended to the desired position on the surface of the substrate, or they can be encapsulated by the material of the substrate except for the required contact points. The selective partial etching of the sacrificial material may be performed before the permanent substrate is fixed or fabricated. Each layer can be etched to a depth of 20 less than-layer thickness or greater than one layer thickness. In some embodiments, the engraving / woodiness may allow a portion of the structural material to fully extend through the substrate to be formed to form an interconnection protruding from the bottom of the substrate. In embodiments where interconnects need to extend through the bottom of the substrate, and where such extensions occur, the back of the substrate can be exposed by == 25 1244512 the structural material. The substrate does not have to be flat, and its lateral extension does not need to correspond to these layers. If the part is etched to a depth of more than one layer, it is best that the pattern of the structural material maintains a fixed pattern, but perhaps the deepest layer will be exposed by the remaining 5 wounds. This will help ensure a more uniform etch depth, because the sacrificial material will not be shielded by the extended area of the structural material. However, in embodiments where the etch depth is less important or it is expected that a different structure pattern will result in a desired etch pattern, the patterning of the structure material will not necessarily have this limitation. 10 In some embodiments, unlike the temporary substrate and the permanent substrate, which are on the opposite side of the 4-layer deposition layer, the permanent substrate may also be disposed in an orientation perpendicular to the temporary substrate. . In other words, the permanent substrate can also be formed on the sides of the majority deposited layer. In some embodiments, the permanent substrate is not fixed to the opposite side of the laminated phase 15 to the temporary substrate, the temporary substrate is removed first and the permanent substrate is then adhered to Its location. This allows the temporary substrate or its topmost surface to be made of a material that can be selectively etched or removed from such layers' and preferably does not damage the structural or sacrificial material of the layers To come. After removing it, the bottom layer of the structure will be exposed and the 20 permanent substrate (such as a dielectric substrate) will be fixed to it. When it is necessary to set the permanent substrate in some positions occupied by the temporary substrate, in some embodiments, it may be necessary to first set a second temporary substrate on the bump layer relative to the first temporary substrate. On the opposite side of the material, then the first temporary substrate can be removed, then the permanent substrate can be fixed, and then the second temporary substrate can be removed. 26 1244512 can be retained in some embodiments of the present invention, the permanent substrate Instead of being a dielectric material, it can be replaced with some other material. For example, the permanent substrate can be made of a conductive material and can be easily electrodeposited. … Although the term permanent material is used here, it should be understood that it does not mean that the longevity of the long-lasting material _ structure is the entire life of the structure, but if 10 constitutes a part of the structure, it should at least provide的 Some part of the service life of the structure. In some embodiments of the present invention, sacrificial layers may also not be used when depositing the stacks. In some embodiments, the fabrication of each layer is accomplished by single or multiple selective depositions, and there may be one or more overlay depositions and one or more planarization operations. 15 Certain embodiments of the present invention can be provided to secure an electrochemically fabricated structure (eg, using a conformable contact cap plating technique or an adhesive cap plating technique) to a substrate that can include active it components. This system is shown in the embodiments shown in Figs. 9 to 9 in which an electrochemically fabricated structure is fixed to a piezoelectric element and combines the two to form an operable piezoelectric device. 20 In Figure 9 (a), a structure includes a structural material 304 surrounded by a sacrificial material 306. The structure 302 is preferably made of most adhesive layers by an electrochemical method. The structure 302 is fabricated on a release material 308, which is fixed to a substrate 312. The release material 308 may be the same as the sacrificial material 306 ', or it may be another material that can be separated by etching or melting (e.g., a 27 1244512 flux) or removal. The release material 308 may be coated on a substrate 312 prior to the electrochemical fabrication of the structure 302, or may be made from one or more of the first deposits of the electro-chemical process. The substrate is typically a conductive material, but in some embodiments it can also be a dielectric material and can be covered with a seed layer of a conductive material. In Figure 9 (b), a prefabricated element or member 322 is shown above the structure 302. The prefabricated member 322 is ready to be fixed to the electrochemical fabrication structure 302. The member 322 is fixed on a device substrate 324. Generally, the device substrate 324 forms the final substrate of the device, which is a combination of the structural materials of the member 10 322 and the structure 302. Depending on the final requirements of a particular device, the device substrate 324 may employ any desired properties (for example, it may be a conductor, a dielectric, a transparent material, or a flexible material, etc.). In this example, the device substrate 324 is a dielectric, so it can provide electrical isolation. On the device substrate 324, a metal element 326 will be patterned 15 and an area of a piezoelectric material 328 will be patterned. The piezoelectric material will have an adhesive 330 (which can be conductive if necessary). ) Will be patterned. A suitable adhesive should have good adhesion to the structure material 304 of the structure 302. The metal element 326 is provided and patterned as an electrode to actuate the piezoelectric material, and as a line to connect the electrode to a power source. : 〇 In Fig. 9 (C), the prefabricated member 322 is adhered to the structure 302 by an adhesive 33o. In Figure 9 (a), the release material 308 has been removed. In FIG. 9 (a), the sacrificial material 306 has been removed from the structural material 304, and the component 334 is released from the structure 302 to form the completed device 336, which is the component 334, 322 and the device substrate 324 And other compositions. 28 1244512 Fig. 10 is a flowchart showing the process steps of the embodiment of Figs. 9 (a) to 9 (e). In Figure 10, the process starts at two points shown in blocks 402 and 406. Block 402 provides a substrate that is separable from a component formed thereon. The substrate and the component can be separated because the substrate has a release layer, or because a release layer will be provided on the substrate. Block 406 provides a second component that will have a desired shape or be made from a variety of desired materials. The second member will have a surface energy that can be fixed to the surface of the first member provided by block 402. Block 404 is to make one or more layers on the substrate to form a component (ie, a part) of one of the 10 k elements. During the fabrication of the first component, the component may be partially surrounded by a sacrificial material, which is finally removed from the component portion of the layer. The first member may have a surface capable of being bonded or fixed to the second member. The two blocks 404 and 406 are the starting points for the operation of block 208. 15 In block 408, one or both of the first and second members will be prepared to be bonded to each other by attaching an adhesive to at least one of its joining surfaces. Of course, in variant embodiments, block 408 may not be part of the process. For example, in some embodiments, an adhesive may be part of the second component provided. 20 The process moves from block 408 to block 410, where the two components will be glued to each other. This bonding can be achieved using pressure-sensitive adhesives, hot-melt adhesives, or other means known to professionals. The process flow moves to block 412, where the first component is separated from the substrate to which it is attached. 29 1244512 蚋 The process moves to block 414, where the first component is separated from any sacrificial material of the non-retained portion of the finalizing device to be made. The process then moves to block 416 where additional manufacturing operations may be performed or the device released during the operation of block 414 may be used. 5 In a variant embodiment, the order of operations of blocks 414 and 412 may be reversed. In still other embodiments, the operations of the two blocks 414 and 412 can be performed on the same day. In still other embodiments, the operations of blocks 412 and / or 414 may be performed between the operations of blocks 4G8 and 410. After reading this article, professionals will be able to easily infer various other variations. 10 & In some embodiments of the present invention, the substrate connected by the IU may be a passive element, but the structure fixed to it may have an electrochemical manufacturing part and be made by other deposition or patterning techniques. The part. One or both of these parts may be active components. This system is shown in the embodiments of the u⑷ to η⑴ diagrams. Figures u (a) to 11 (i) show another modified embodiment of the present invention. The system 15 uses the same known operation to make a plurality of layers, and then uses different operations to make the added portion of the structure. Fig. U⑻ shows that the first structure 502 is similar to Fig. 9⑷.弟 In brother ll (b, d? V) 圚, a piezoelectric material 528 has been deposited on the top surface (ie, the last layer) of the structure 50, and a photoresist 52 has been deposited on the 90 F. Each with ten is shown in Figure 11 (c). The piezoresistance 520 of the piezoelectric material is then used as a change-making process. For example, one of the required patterns of the piezoelectric material 528 is documented and can be completed as follows: first, the optical pattern is patterned to selectively The piezoelectric material is etched. The _ piezoelectric material can be patterned by lift_Qff 30 method. Figure U (d) is not shown-optional step two levels, using a median 44 ^, the edge part of the device to form the surface space of the device, and the second two / 532 fill the energy requirements caused by the engraving of the piezoelectric material , Or at least the height of ㈣ =. In some variations, it may be enabled. Bahao can flatten the dielectric and piezoelectric material layers of this combination: and show the structure after the bottom-layer deposition, which will provide -metal 534 on the top surface of these piezoelectric materials. Figure 7 ^ The result of patterning the deposited metal. The pattern of the metal is broken to form the piezoelectric circuit. The patterning of the metal can be performed in multiple ways, such as, +, and Tian Shixian, for example, it can be performed in a manner of 15 20 to pattern the piezoelectric material. The first figure shows the result of filling a gap in a metal layer with a dielectric material 536 (which can be the same as a dielectric material). The domain of the material can also be the same as that of the piezoelectric material layer. Void method to complete. For example,-materials can be deposited in large quantities, distributed, cured, and then flattened to produce-a uniform thickness of the required thickness. Metal and dielectric layer. The substrate can have any desired characteristics, which in this case is a -dielectric. In the figure u⑴, the release material 5⑽ has been removed. In the figure below, the -sacrifice material 508 has been removed to form a-release device, which can be subjected to additional processing operations or used. In a final functional device, one passes through the 9th ( e) The structural material 304 in the figure, or the connector 504 in the figure 11 can be used to form the second electrode of the piezoelectric element in order to make a final device. 31 1244512 Figure 12 is a flow diagram The process of the embodiment of Figures 11 (a) to 11 is shown. The process starts at block 602, and a substrate is lifted. A device will be fabricated thereon. The device will eventually be transferred to a different substrate, which may have been provided with a release layer, or it can be used in electrochemical manufacture of the first or more layers 5 To add a suitable release material (eg, sacrificial material). Block 604 uses a first method to make one or more layers (eg, electrochemically), which will form part of the device and can be Surrounded by a sacrificial material. Block 606 uses at least one different deposition method to further construct and pattern the structure. In some embodiments, additional electrochemical manufacturing operations may be used to complete the structure, which would include The unreleased device. Block 608 places an adhesive on the last layer of the formed structure and / or a substrate to be attached to the structure. The use of the adhesive may or may not be necessary According to the constituent materials of the substrate and the method used for joining. 15 Block 610 is to make a substrate on the last forming layer of the structure, or to adhere the substrate to the last forming layer. Block 612 is Connect the structure with the original The substrate is separated. Block 614 is to separate the structure from any sacrificial material that is not a reserved part of the final device. 20 Block 616 is to perform any additional manufacturing operations or to use the device. Use step 10_ Figure, various changing operations can be implemented, and the order of operation blocks can be changed. Two additional embodiments are shown in sections 13 (a) to 13 (e), 14 (a) to 14 (c), and 15⑷ ~ 15 (f) In the picture! Hai = additional embodiment shows the substrate to 32 1244512 replacement technology, which includes increasing the surface area (junction) between the structure and the bonded substrate, or in the structure The middle structure is made into a fine structure that can be fastened to the exchange substrate. Figures 13 (a) to 13 (c) do not show a structure for converting a structure 702 from a first substrate 704 to a second substrate 7. In the method of 6, wherein the contact area between the structure and the second base material is flat, there is no increased surface area or buckling portion or the like to help improve its adhesion. Figure 13 (d) shows a modified structure 702 'and a modified substrate 706, wherein a groove notch is provided on one of the flat surfaces of the structure, and a convexity is provided in the replacement substrate or an adhesive layer Parts can be embedded in the grooves to strengthen the adhesion between the 10 structure and the substrate. Figure 13 (e) shows a modified structure 702 "adhered to a modified replacement substrate 706", wherein the structure includes a groove with a chamfered portion, and the material of the replacement substrate or an adhesive will It is placed in it so that the structure and the substrate can be strengthened by mechanical fastening between them. 15 The revised structure of Figure 13 (d) can be implemented in many different ways. One of the systems of law is not shown in Figures 14 (a) to 14 (c). Figure 14 (a) shows that the last two layers 712 and 714 of the structure have been made, and the material layer 714 has not been fastened to a substrate. Figure 14 (b) shows the two layers 712 and 714, and the other figure, wherein the layer 20 714 'has been modified to contain holes, grooves, gaps, etc. in the structural material 718. The holes and grooves can be filled with a sacrificial material 72o as part of the process. Figure 14 (c) shows the state of the process after the sacrificial material 720 shown in Figure 14 is removed from the opening 722 of the material layer 714. In some embodiments, the openings in the material layer 714 ′ can be repaired during the material layer system 33 1244512. _ In the examples, the openings in the material layer m ′ can be made in the layer system ~ It is necessary to selectively select holes in the material layer 714 and ::::: the engraving process can be performed using a contact cover or a wheel cover. If the "^" structure of the "domain" of the wire is removed, the elimination can be performed in large quantities. Or, = sacrificial material 72_ carved to complete the carving can also be used-or multiple covers = also = at least will Mask the sacrifice material in the material layer of the area 10 15 20 and then mosquito ^ structural material. When the openings are left for bonding *,-adhesive or flowable substrate material remains Is laid, minus) soil. ^ Connected to the structure or solid ground structure (this will cause-in the example 'take the sacrificial material before the bonding operation = will not be outside the e-structure material part The order of these bonding and debonding in the region of the yarn structure will improve the substrate = bonding position, and / or can be coordinated _ sincere flow: θ; 4 move to the area around the structure In other embodiments, the sacrificial material outside the structural material region can be removed accordingly, for example, because == the material may be more accessible before bonding than after bonding. Come in ^ in other actual patch The external series is not uniform before and after the bonding, because of the unevenness of the structure to be bonded to the correct positioning and / Partially or completely fill the two major inclusive properties of the base material or adhesive that can flow through the two gaps. Correct the last layer (or the last few layers) of the structure ~ The data of the drought can be modified according to the designer The CAD slot instruction of the required structure, or + +-the lean material processing program will perform various BOOiean operations (eg 34 1244512 such as leach or expansion operations), and according to the fixed or user can set such as fixed connection Position and size of the fixed grid, which can be superimposed on the number (for example, the correct position of the structural material) to do this. This data processing operation = = structural data transferred into the material layer data, or based on Retained in the structure data of the 5 to carry out.. The holding function of the transition area between the structure and the substrate in Figure I3⑷. Hunting a variety of ways to obtain. For example, a one-money operation can be used, which There is a tendency that the remaining material will be reversed by 3. The reverse cutting can also be the result of pressing the contact cover into the hole being formed. The cover can protect the upper part of the side wall of the 10 hole of the door to reach a certain level. A depth, and the remainder of the level at that point; that is, an undercut is formed. The isolating function can also be obtained by modifying the pattern of the structural material on the last two or more layers of the structure, where the contact layer (and possibly one or more additional layers) will have a smaller size in the structural material Openings in the-or multiple previously formed layers will have larger openings. The 15 smaller and larger openings in different layers will be filled with sacrificial material in the layer process The sacrificial material can be removed after the layer is made in the same manner as described previously in Figures 14 (b) and 14 (c). A method of making such retaining portions, undercuts, or interlocking structures An example of the method is shown in Figures 15 (a) to 15⑴. 20 Figure 15 (a) shows the last five layers of a structural example made by the electrochemical manufacturing method, all of which have the same structure . As shown, the structure includes a structural material region 752 and a sacrificial material region 754 on the periphery of the structure itself. Figure 15 (b) shows the last few layers of this electrochemically fabricated structure, where the structure of the last two layers has been modified to include openings in its structural material, with 35 1244512 with an undercut or retaining structure . As shown in FIG. 8 (a), the holding structures plus 764 and the channels 772 and 774 leading to them are temporarily filled with a first sacrificial material which may be the same as or different from the first sacrificial material 754. The second sacrificial material in these grooves or retaining structures 762 and 764 and their channels 5 772 and ^ 74 has been removed in Figure 15 (C). Figure 5 (d) shows that the structure has been covered with an adhesive 774 and a conversion substrate 776 is located above the bonding position. Brother 15 (e) illustrates a state in which the conversion substrate 776 has been lowered to the position and adhered to the structure by the core 4. Not only does the substrate adhere to 〇〇, but also Li Pu wt between said # 2 will also occur between the adhesive and the structure interlocking, and the right hybrid substrate has better than the structure Adhesive properties, the combination = substrate / structure system's overall robustness will be improved. Brother 15_ shows that the external sacrificial material 754 has been removed 15 20 rl! This shackle method and the method of increasing the surface area can have many changes I ^ Red method towel, the height of the transfer or interlocking elements can be determined by A :: structural :: stretch "layer thickness. If the substrate door is not used with an adhesive: 4 together, the flowable substrate material can also fill these openings and then cure them. In other embodiments, the substrate itself may also include openings or retaining clips to facilitate the grasping of the adhesive or filler material. In still other embodiments, the retaining structures are more detailed than those of a single substrate. And the fine structure of the buckle between the structures is two or more combinations of structures that can produce a buckle shape (such as straight holes that project into the structure at different angles, etc.) 36 1244512 In other embodiments, The two to be fixed may not be a multilayer structure and a substrate, but include one or more multilayer structures in combination with one or more other elements or components, which may or may not be multilayer structures, and may It may or may not be substrate-like. 5 An embodiment capable of forming an interlocking reinforced adhesive structure may be It is described as follows: (1) obtain a data file of the structure to be made; (2) modify the data so that it contains one or more branches or channels in the last one or more layers, and in each layer next to the channel containing the channels One or more layers can contain grooves or retaining structures; (3) the structure is made on a first substrate; (4) 10 grooves that etch away the channels or retaining holes; (5) routing A flowable material is on the surface of the structure with the channels. If a separate substrate is to be bonded with the flowable material, it can be an adhesive or it can be formed as a curable material For the shape of the desired substrate, (6) use the adhesive or cure the substrate material to adhere the substrate and the structure to form a substrate adhered to the structure; and (7) if needed and Before 15 is removed, any remaining sacrificial material is removed, and the first substrate is released from the structure. Many possible variations include: (1) using a single sacrificial material to fill the openings, and The outer area of the structure, or two or more sacrificial materials can also be used for this; (2) 20 holes are formed in the structural material, so that a sacrificial material does not need to temporarily fill the openings; and / or (3) use a variety of structural materials. Lead to the grooves or hold fine-structured channels or branches The channels may have any desired length, they may have different cross-sectional dimensions or different lengths. The grooves or retaining structures need not necessarily have different dimensions from the channels, as they can also simply From the position fork 37 1244512 of the channel, as a matter of fact, they can have a smaller cross-sectional area; (5) there is no need to correspond one-to-one between each groove and the channel; (6) such The grooves themselves may have different heights, or be provided with different depths in the structure, or have different cross-sectional dimensions. 5 In other variant embodiments, instead of the undercuts or the retaining details penetrating into the interior of a structural element Structure, it can also form an undercut buckle groove on the side wall area of the structural material. These buckle grooves can be filled with an adhesive or a base material, and reverse buckle grooves on the other parts of the structural material. Interlocking elements are formed when mating. 10 In some embodiments, a multilayer structure can be manufactured from a "top" layer (the expected last layer), which is adjacent to a temporary substrate, or it may be made with one or more sacrificial materials. The substrate is temporarily separated and then attached to subsequent layers until the first layer is reached. In this case, the conversion of the substrate can be completed by directly fixing the structure (such as a permanent substrate) to the final formation layer (such as the expected 15 first layer), and then, if not yet, the temporary substrate Can be removed. In some other embodiments, the multilayer structure can be manufactured from a predetermined first layer, which can be formed directly on a temporary substrate or separated from the temporary substrate by a sacrificial material, the sacrificial material The sacrificial material may be the same or different from forming a part of the layer containing the structural material. This construction process will progress from the first layer to the last layer, and if needed, one or more layers of sacrificial material can be placed on the last layer. The sacrificial material provided on the last layer may be the same as or different from the sacrificial material used to make each layer including the structural material and the sacrificial material. If necessary, a second temporary substrate can also be fixed to the last layer or the material layer on it. The first temporary substrate (ie, the original substrate) can be removed by 38 1244512. If any sacrificial material layers are present under the first layer, they can also be removed, and then fixed to the first layer with a permanent (or structural) substrate. The second temporary substrate contains any The removed sacrificial material is removed together. -In some embodiments, the structural material may be rigid, while in other embodiments, it may be flexible. In other implementations, the permanent substrate may be an integrated circuit or other electrical component, and may be a dielectric adhesive, a wire junction, a reflow soldering contact, and / or other conductive or dielectric components—or Many people come to complete the connection. 10 Professionals will be able to infer many other variations after reading this article. More practicalities can also be formed by the combination of various technologies disclosed in this case. Still more implementations can be made by combining the technology disclosed in this case with the contents described in the patents and applications in the table below, and its contents are hereby incorporated by reference. • U.S. Patent application, application name U.S. patent application publication number, publication date Γ \ Π / Α ί \ ^ Λ Γ \ / ^ Inventor, famous storm --------- ~ Ί • 09 / 493,496 2001. 01. 28 Cohen, Adam ~~~~-• 10/677556 2003. 10. 01 s Alignment and / or retaining fixtures that can accept the component • 10/830262 Ί 2004. 04. 21 2 ^ people, minus • (Docket P-US099 -A-MF) 2004. 05. 07 hood 'can be combined with a dielectric sheet and a field seed layer to achieve ten-tanning; a method for electrochemically fabricating structures for removing stings, * 2002710077145 g? En et al., "Junction-Methods and More • 20030127336A1 2003. 07. 10 • 10/697597 2002. 12. 20 et al., EFAB method for spraying metal or powder coating processes • 10/677498 2003. 10. 01 gjen, et al., Eye mask and method and equipment for manufacturing 3] 〇 structure using the mask • 10/724513 2003. 11. 26 Cohen et al. Non-cis-shaped hood and method and device for manufacturing 3D structures, • 10/607931 2003. 06. 27 et al. U-Small RF and Microwave Components and Methods Used to Make These Components 39 1244512 • (Docket P-US093 -A-MF) 2004. 05. 07 Cohen et al., Including electrochemical fabrication methods that use surface treatments to reduce overplating and / or squeak to flatten 3D structures when they are layered, evening • 10/387958 2003. 03. 13 • 2003-022168-A1 2003. 12. 04, with better surface brightness ^^^. 10/434494 2003. 05. 07 • 2004-0000489-A1 2004. 01. 01 My Yikou box? Touch cover secret • 10/434289 2003. 05. 07 • 20040065555 2004. 04. 08 • 10/434294 2003. 05. 07 • 20040065550 2004. 04. 08 Gang Zhang ’“ With enhanced deposition • 10/434295 2003. 05. 07 • 2004-0004001 2004. 01. 08 Design, "Used to make • 10/434315 2003. 05. 07 • 2003-0234179 2003. 12. 25 = Postr A · 10/434103 2004. 05. 07 • 2004-0020782 2004. 02. 05 • (Docket P-US105 -A-MF) 2004. 05. 07 cohen et al., "For ~~ • 10/434519 2003. 05. 07 • 2004-0007470 2004. 01. 15 days to • 60/533947 2003. 12. 31 Kumar et al., "_.   . 10/724515 2003. 11. 26 Cohen et al., “The method of manufacturing structures is included in the package, and there are various other embodiments of the present invention for electrification. There are various techniques according to the techniques and accessories herein. Some embodiments may not use any overlying deposition process and / or planarization process. Some embodiments; can include selective deposition of multiple different materials on-or multi-layer. Some embodiments may use non-electrical Deposited overlying deposition method. Some embodiments 40 1244512 Second, nickel is used as the texture material, while other implementations may use different materials: preferably, such as gold, "any other electrified material, Wei and copper and / = some The sacrificial materials are separated. Some embodiments may use copper as a junction; some have sacrificial materials. Some implementations remove the sacrificial = bin while others do not. In some embodiments, if the deposition system When the reading between the isthmus and the substrate is transferred from the surface of the conformable material to its close edge, the deposition depth γ is increased by pulling the conformable contact cover away from the substrate. 10 eve ^ After reading this article ' Those skilled in the art will readily know many aspects of the present invention: 'Design changes and usages ^ Therefore, the present invention is not limited to the foregoing specific embodiments, modifications, and uses, but only by the scope of the following patent applications Restrictions. [Figure 1 is simple, ^ =, and ^ Ming] Figures 1 (a) ~ 1 (c) schematically show the side views of the different stages of a Cc cover plating method, and the first (d) ~ 1 (g Figures 2 (a) through 2 (f) are schematic side views of different stages of a plating method using different types of CC covers. Side views of the different stages of the manufacturing method, in which a sacrificial material is selectively deposited and a structural material is deposited on the surface. Figures 3 (a) to 3 (c) schematically show that it can be used to manually implement the second (a ) ~ 2 (f) Side views of various combinations of the electrochemical production methods shown in the figures. Figures 4 (a) to 4 (i) schematically show the first method of making a structure using an adhesive cover key cloth method. Layer, where the overlying deposition of a second material covers the openings of the first material between the deposition locations and the first material itself. 1244512 Figure 5 shows the present invention. A flowchart of the basic operation of a preferred embodiment. Figures 6 (a) to 6 (c) show a structural example created according to a preferred embodiment of the present invention, of which 6 (a) and 6 (b ) Shows two different perspective views of the structure, and Figure 6 (c) shows a side view of the structure. 5 Figures 7 (a) to 7 (0) show a preferred embodiment according to the present invention The procedures for making the structures of Figs. 6 (a) to 6 (c) from a plurality of adhesive layers. Figs. 8 (a) to 8 (d) show the preparation of 6 (a) to 6 (c). An example of the change of one of the last layers of the structure of the figure, and how the permanent substrate is mated to the material layer. Figures 9 (a) to 9 (e) show each of 10 when one embodiment of the present invention is applied. step. Fig. 10 provides a flowchart of the basic operation of the embodiment of Figs. 9 (a) to 9 (e). Figures 11 (a) to 11 (j) illustrate various operation steps performed when implementing one embodiment of the present invention. 15 Figure 12 provides a flowchart of the basic operation of another embodiment of the present invention. Figures 13 (a) to 13 (c) schematically illustrate the process of transferring a structure 702 from a first substrate 704 to a second substrate 706. Figures 13 (d) to 13 (e) are schematic side views of a structure and a substrate having a correction structure capable of strengthening the fixing. 20 Figures 14 (a) to 14 (c) schematically show that a manufacturing method can modify one of the structures. The structure of the bonding layer includes the groove shown in Figure 13 (d). Figures 15 (a) to 15 (f) schematically show that a manufacturing method can modify the structure of a fixed layer of a structure so that it contains fastening grooves to enhance the interconnection between the structure and the substrate. 0 42 25 1244512 List of symbols for the main components] 2 ... the first material 56 ... Y stage 4 " · second material 58,64 ... slot 6,82 ... substrate 62 ... anode 8 ... CC cover 66 ... plating solution 10 ... insulator 68 ... ·· Feet 12 ... Anode 72, 74 ... Frame 14 ... Plating solution 84 ... · Photoresist 16 ... Electrolyte 86,88 ... Surface 18 ... Power Source 94,96 ... Metal 20 ... Support Structure 98 ... 3D Structure 22 ... Deposition Materials 102-110 ... Each operation step of the process 26, 92 ... Opening holes 122, 302 ... Structure 32 ... Electrochemical manufacturing system 124, 200 ... Permanent substrate 34 ... Substrate holding system 201-210 ... Layers 36 ... CC cover sub system 211 ... sacrificial material layer 38 ... overlay deposition sub system 212 ... temporary substrate 40 ... flattening sub system 304, 504 ... structural material 42 ... slider 306, 506 ... sacrificial material 44 ... actuator 308, 508 ... release material 46 ... indicator 312 ... substrate 48 ... carrier 322 ... prefabricated member 52 ... polishing plate 324 ... mounted Set base material 54 ... force base 326 ... metal 43 1244512 328 ... Fort electrical material 330 ... adhesive 334 ... component 336 ... device 402-416 ... each process step 502 ... first structure 520 ... photoresist 528 ... Piezoelectric materials 532, 536 ... Dielectric materials 534 ... Metals 538 ... Device substrates 602-614 ... Process steps 702 ... Structure 704 ... First substrate 706 ... Second substrate 712, 714 ... material layer 718,752 ... structure material 720,754 ... sacrificial material 722 ... perforation 762,764 ... holding structure 772,774 ... channel 776 ... conversion substrate 44

Claims (1)

公告 拾、申請專利範圍： 1. 一種由多數黏接層來製成3D結構的電化學製造方法，包 含： (A) 選擇性地沈積一料層的至少一部份於一暫時基 5 材上’該暫時基材可包括先前沈積的材料， (B) 製造多數料層而使後續層緊鄰並黏接於先前沈 積層，而該製造包含重複操作(A)多數次； (C) 在製成多數層之後，將含有一介電材料的結構 基材固接於該結構之一層的至少一部份，並由該結構除 10 去該暫時基材的至少一部份。 2.如申請專利範圍第1項的方法，更包含： (D) 提供多數預製的罩體，該各罩體包含一圖案化 的介電材料，其含有至少一開孔，當在製造一料層的至 少一部份時可透過該等開孔來進行沈積，且該各罩體包 15 含一支撐結構會支撐該圖案化的介電材料； 其中至少有些選擇性的沈積操作包含： (1)使該暫時基材與一所擇之預製罩體的介電材料 接觸； (2)在有電鍍溶液存在的情況下，透過該所擇罩體中 20 之至少一開孔來將一電流導經一陽極與該暫時基材之 間，該陽極包含一所擇的沈積材料，而該暫時基材會形 如一陰極，故該所擇的沈積材料會沈積於暫時基材上來 形成一層的至少一部份；及 (3)由該暫時基材分開該所擇的預製罩體。 45 1244512 3. 如申請專利範圍第1項的方法，其中有些選擇性的沈積 操作包含： (1)在該基材之一表面上提供一圖案化的黏接罩，該 罩含有至少一開孔； 5 (2)在有電鍍溶液存在的情況下，透過該黏接罩中之 至少一開孔來將一電流導經一陽極與該基材之間，該陽 極包含一所擇的沈積材料，且該基材會形如一陰極，故 該所擇的沈積材料會沈積於該暫時基材上來形成一層 的至少一部份；及 10 (3)由該基材除去該罩。 4. 如申請專利範圍第1項的方法，其中該固接操作包含將 一介電黏劑佈設在該結構基材及/或所要固接之該層的 至少一部份上，然後使該結構基材與該層的至少一部份 接觸。 15 5.如申請專利範圍第1項的方法，其中該結構基材係為一 預製片體而黏接於該層的至少一部份。 6. 如申請專利範圍第1項的方法，其中該結構基材包含一 可流動材料而接觸於該層的至少一部份，然後會被固化。 7. 如申請專利範圍第6項的方法，其中該可流動材料包含 20 一預聚物。 8. 如申請專利範圍第7項的方法，其中該預聚物包含一雙 成分環氧樹脂。 9. 如申請專利範圍第1項的方法，其中該結構基材包含一 撓性材料。 46 1244512 10. 如申請專利範圍第1項的方法，其中該固接操作會使該 結構基材至少部份地包圍所沈積結構之一層的至少一 部份。 11. 如申請專利範圍第1項的方法，其中該多數層的製造包 5 括沈積至少一第二材料。 12. 如申請專利範圍第1項的方法，其中該結構基材對該結 構的固接包括部份基材與部份結構的機械式扣接。 Π.如申請專利範圍第11項的方法，其中該所擇沈積材料或 該第二材料之一者包含一結構材料，而另一者包含一犧 10 牲材料。 14. 如申請專利範圍第11項的方法，其中該第二材料係為一 結構材料，而該所擇沈積材料為一犧牲材料。 15. 如申請專利範圍第11項的方法，其中該所擇沈積材料為 一結構材料，而該第二材料係為一犧牲材料。 15 16.如申請專利範圍第13項的方法，其中在固接該結構基材 之前該犧牲材料的至少一部份會被除去。 17. 如申請專利範圍第16項的方法，其中該犧牲材料會被除 去的區域之至少一部份會被充填一介電材料。 18. 如申請專利範圍第17項的方法，其中該結構基材包含該 20 介電材料。 19. 如申請專利範圍第13項的方法，其中在該犧牲材料去除 之前，該結構基材會被固接於該層的至少一部份。 20. 如申請專利範圍第13項的方法，其中當該結構材料由該 犧牲材料釋離時，該結構材料亦會由該暫時基材釋離。 47 1244512 中該結構基材包含, 其中该結構基材包含一 21 ·如申請專利範圍第1項的方法， 電構件。 22·如申請專利範圍第1項的方法， 積體電路。 23·如申請專利範圍第旧的方法，其中該固接操作包含一 或多個線結操作，其會將該結構的-或多個部份固接於 4結構基材的一或多個部份。 10 •如中Μ專利圍第i項的方法’其中該固接操作包含在 該結構的一或多個部份與該結構基材的一或多個部份 之間製成一或多個重流的焊接觸點。 25·種可由多數黏接層來製成3D結構的電化學製造裝 置，包含： (A) —裝置可選擇性沈積一料層的至少一部份於一 暫時基材上，該暫時基材可包含先前沈積材料； (B) —裝置可製造多數層且使後續層緊鄰並黏接於 先前沈積層，而該製造包含重複操作(A)多數次； (C) 一裝置可將一包含一介電材料的結構基材固接 於該結構之一層的至少一部份，並由該結構除去該暫時 基材的至少一部份；及 (D) —電腦可程式化控制接觸裝置、傳導裝置、分 離裝置、固接裝置等，而使該固接裝置在該結構之各層 形成之後來操作。 26·如申請專利範圍第25項之裝置，更包含： (D)多數的預製罩體，該各罩體包含一圖案化的介 48 1244512 電材料其含有至少一開孔，當製造一層的至少一部份 時，可穿過該等開孔來進行沈積，且各罩體包含一支撐 結構可支撐該圖案化的介電材料； 其中該選擇性沈積裝置包含： 5 (1)一裝置可使該暫時基材與一所擇預製罩體的介 電材料接觸， (2) —裝置可在有一電鍍溶液存在的情況下，透過該 所擇罩體的至少一開孔來將一電流導經一陽極與該暫 時基材之間，該陽極包含一所擇的沈積材料，且該暫時 10 基材會形如一陰極，而使該所擇沈積材料沈積於暫時基 材上來形成一層的至少一部份；及 (3) —裝置可由該暫時基材分離該所擇的預製罩體。 27. 如申請專利範圍第25項的裝置，其中該選擇性沈積裝置 包含： 15 (1)一裝置可提供一圖案化黏接罩體於該基材之一 表面上，且該罩體含有至少一開孔； (2) —裝置可在有一電鍍溶液存在的情況下，透過該 黏接罩體的至少一開孔來將一電流導經一陽極與該基 材之間，該陽極包含一所擇的沈積材料，且該基材會形 20 如一陰極，而使該所擇沈積材料沈積於該暫時基材上來 形成一層的至少一部份；及 (3) 可由該基材除去該罩體的裝置。 28. —種由多數黏接層來製成3D結構的電化學製造方法，包 含： 49 1244512 (A) 選擇性地沈積一料層的至少一部份於一第一暫 時基材上’該第一暫時基材可包括先前沈積的材料， (B) 製造多數料層而使後續層緊鄰並黏接於先前沈 積層；及 5 (C)在製成多數層之後，將一含有一介電材料的第 二暫時基材固接於該結構之一層的至少一部份，並由該 結構除去第一暫時基材的至少一部份，然後將一結構基 材固接於該結構之一層的至少一部份，其會至少部份地 重疊該第一暫時基材曾固接的位置。 10 29.如申請專利範圍第28項的方法，其中該等選擇性沈積操 作包含： (1) 提供一黏接的圖案化罩體於該基材之一表面 上，且該罩體包含至少一開孔； (2) 在有一電鍍溶液存在的情況下，透過該黏接罩體 15 的至少一開孔將一電流導經一陽極與該基材之間，該陽 極包含一所擇的沈積材料，而該基材會形如一陰極，故 該所擇沈積材料會沈積於該暫時基材上來形成一層的 至少一部份；及 (3) 由該基材除去該罩體。 身 20 30. —種由多數黏接層來製成3D結構的電化學製造方法，包 含： (A) 選擇性地沈積一料層的至少一部份於一第一犧 牲基材上，而該暫時基材可包括先前沈積的材料； (B) 製造多數層且使各後續層緊鄰並黏接於前一沈 50 1244512 積層；而該製造包括重複操作(A)多數次； (C)在製成多數層之後，將一含有多種材料及/或一 圖案化結構的結構之基材固接於該結構之一層的至少 一部份，並由該結構除去該暫時基材的至少一部份。 5 31.如申請專利範圍第30項之方法，更包含： (A)提供多數的預製罩體，該各罩體皆包含一圖案 化的介電材料，其含有至少一開孔，在製造一層的至少 一部份時，可穿過該等開孔來進行沈積，且各罩體包含 一支撐結構可支撐該圖案化的介電材料， 10 其中至少有些選擇性沈積操作包含： (1) 使該暫時基材與一所擇之預製罩體的介電材料 接觸； (2) 在有一電鍍溶液存在的情況下，透過該所擇罩體 的至少一開孔將一電流導經一陽極與該犧牲材料之 15 間，該陽極包含一所擇的沈積材料，而該暫時基材會形 如一陰極，故該所擇的沈積材料會沈積於該暫時基材上 來形成一層的至少一部份；及 (3) 由該犧牲材料分開該所擇的預製罩體。 32.如申請專利範圍第30項的方法，其中該等選擇性沈積操 20 作包含： (1) 提供一黏接的圖案化罩體於該基材之一表面 上，且該罩體包含至少一開孔； (2) 在有一電鍍溶液存在的情況下，透過該黏接罩體 的至少一開孔將一電流導經一陽極與該基材之間，該陽 51 1244512 和匕3所擇的沈積材料，而該基材會 該所擇沈菸从}丨人 夕如一陰極，故 積材料會沈積於該暫時基材上 至少-部份，·及 笊形成-層的 (3)由該基材除去該罩體。 33.=種由多數黏接層來製成观構的電化學製造方法，包 時基^選擇性地沈積—料層的至少1份於-第一暫 土 ，§亥第一暫時基材可包括先前沈積的材料； 10 製造多數^使後續層緊鄰並倾於=1積 圖幸製成多數層之後，將一含有多數材料及/或一 、、、°構的第二暫時基材固接於該結構之_層的至 i 一部份，並由該結構除去該第一暫時基材的至少一部 15 = ^後將—結構基材固接於該結構之-層的至少一部 15 I ’其會至少部份地重疊該第—暫時基材曾固接的位 置。 34·如申請專利範圍第33項的方法，其中該等選擇性沈積操 作包含： (1) 提供一黏接的圖案化罩體於該基材之一表面 2〇 上，且該罩體包含至少一開孔； (2) 在有一電鍍溶液存在的情況下，透過該黏接罩體 的至v —開孔將一電流導經一陽極與該基材之間，該陽 極包含一所擇的沈積材料，而該基材會形如一陰極，故 孩所擇沈積材料會沈積於該暫時基材上來形成一層的 52 1244512 至少一部份；及 (3)由該基材除去該罩體。 。一種製造一多部段3D結構的電化學製造方法，其中至少 有一部段係由多數黏接層所製成，該方法包含： (A) 製成該多部段結構的至少一部段，包括： (1) 選擇性地沈積一料層的至少_部份於一基材 上’該基材可包括先前沈積的材料； (2) 製造多數層且使後續層緊鄰並黏接於先前沈 積層’而該製造包含重複操作（1)多數次； (B) k供该多部段結構的至少一添加部段·， (C) 將該至少一部段固接於該至少一添加部段，而 來形成該多部段結構。 36·如申凊專利範圍第乃項的方法，其中該等選擇性沈積操 作包含： (1) 提供一黏接的圖案化罩體於該基材之一表面 上，且該罩體包含至少一開孔； (2) 在有—電鍍溶液存在的情況下，透過該黏接罩體 的至：>、開孔將一電流導經一陽極與該基材之間，該陽 極ο έ所擇的沈積材料，而該基材會形如一陰極，故 該所擇沈積材料會沈積於該暫時基材上來形成一層的 至少一部份；及 (3) 由該基材除去該罩體。 37.如申請專利範圍第35項的方法，更包含由該基材分開該 多部段結構的至少一部段。 53Announcement and scope of patent application: 1. An electrochemical manufacturing method for making a 3D structure from a plurality of adhesive layers, comprising: (A) selectively depositing at least a portion of a layer on a temporary substrate 'The temporary substrate may include previously deposited material, (B) manufacturing a plurality of layers such that subsequent layers are immediately adjacent and adhered to the previously deposited layer, and the manufacturing includes repeating operations (A) a plurality of times; (C) After a plurality of layers, a structural substrate containing a dielectric material is fixed to at least a portion of a layer of the structure, and at least a portion of the temporary substrate is removed from the structure. 2. The method according to item 1 of the patent application scope, further comprising: (D) providing a plurality of prefabricated shells, each of which comprises a patterned dielectric material containing at least one opening, and when manufacturing a material At least a part of the layer can be deposited through the openings, and each cover package 15 contains a support structure that will support the patterned dielectric material; at least some of the selective deposition operations include: (1 ) Contacting the temporary substrate with the dielectric material of a selected pre-made cover; (2) conducting a current through at least one opening in 20 of the selected cover in the presence of a plating solution; Between an anode and the temporary substrate, the anode contains a selected deposition material, and the temporary substrate will be shaped as a cathode, so the selected deposition material will be deposited on the temporary substrate to form at least one layer. Part; and (3) the selected prefabricated cover is separated by the temporary substrate. 45 1244512 3. According to the method of claim 1, some selective deposition operations include: (1) providing a patterned adhesive cover on one surface of the substrate, the cover containing at least one opening 5 (2) in the presence of a plating solution, conducting an electric current between an anode and the substrate through at least one opening in the bonding cover, the anode including a selected deposition material, And the substrate will be shaped like a cathode, so the selected deposition material will be deposited on the temporary substrate to form at least a part of a layer; and 10 (3) removing the cover from the substrate. 4. The method as claimed in claim 1, wherein the fixing operation includes disposing a dielectric adhesive on at least a part of the structural substrate and / or the layer to be fixed, and then making the structure The substrate is in contact with at least a portion of the layer. 15 5. The method of claim 1, wherein the structural substrate is a prefabricated sheet and adhered to at least a part of the layer. 6. The method of claim 1, wherein the structural substrate comprises a flowable material that contacts at least a portion of the layer and is then cured. 7. The method of claim 6 in which the flowable material comprises 20 prepolymers. 8. The method of claim 7, wherein the prepolymer comprises a two-component epoxy resin. 9. The method of claim 1, wherein the structural substrate comprises a flexible material. 46 1244512 10. The method according to item 1 of the patent application, wherein the fixing operation causes the structural substrate to at least partially surround at least a portion of a layer of the deposited structure. 11. The method of claim 1, wherein the manufacturing of the plurality of layers includes depositing at least a second material. 12. The method of claim 1 in which the structural substrate is secured to the structure by mechanical fastening of part of the substrate and part of the structure. Π. The method according to item 11 of the application, wherein one of the selected deposition material or the second material includes a structural material and the other includes a sacrificial material. 14. The method of claim 11 in which the second material is a structural material and the selected deposition material is a sacrificial material. 15. The method as claimed in claim 11 wherein the selected deposition material is a structural material and the second material is a sacrificial material. 15 16. The method of claim 13 in which at least a portion of the sacrificial material is removed before the structural substrate is secured. 17. The method of claim 16 in which at least a portion of the area where the sacrificial material is to be removed is filled with a dielectric material. 18. The method of claim 17 wherein the structural substrate comprises the 20 dielectric material. 19. The method of claim 13 wherein the structural substrate is fixed to at least a portion of the layer before the sacrificial material is removed. 20. The method of claim 13 wherein when the structural material is released from the sacrificial material, the structural material is also released from the temporary substrate. 47 1244512 The structural base material includes, wherein the structural base material includes an electric component according to the method of claim 1 in the scope of patent application. 22. The method according to item 1 of the scope of patent application, integrated circuit. 23. If the method is the oldest in the scope of patent application, wherein the fixing operation includes one or more knotting operations, it will fix the-or more parts of the structure to one or more parts of the 4-structure substrate. Serving. 10 • The method of item i in the Chinese patent, wherein the fixing operation includes making one or more weights between one or more parts of the structure and one or more parts of the base material of the structure. Soldering contacts. 25 · Electrochemical manufacturing devices with a 3D structure that can be made from most adhesive layers, including: (A) —The device can selectively deposit at least a portion of a layer on a temporary substrate, which can be Contains previously deposited material; (B) —The device can fabricate multiple layers with subsequent layers immediately adjacent to and adhered to the previously deposited layer, and the fabrication involves repeating operations (A) multiple times; (C) A device can include one The structural substrate of the electrical material is fixed to at least a portion of a layer of the structure, and at least a portion of the temporary substrate is removed from the structure; and (D) — a computer-programmable control contact device, a conductive device, Detach device, fixation device, etc., so that the fixation device is operated after the layers of the structure are formed. 26. The device according to item 25 of the scope of patent application, further comprising: (D) most of the prefabricated shells, each of which contains a patterned dielectric 48 1244512 electrical material which contains at least one opening, when manufacturing at least one layer of at least In some cases, deposition can be performed through the openings, and each cover includes a supporting structure that can support the patterned dielectric material; wherein the selective deposition device includes: 5 (1) a device can The temporary substrate is in contact with the dielectric material of a selected pre-made cover. (2) —The device can conduct a current through at least one opening of the selected cover in the presence of a plating solution. Between the anode and the temporary substrate, the anode contains a selected deposition material, and the temporary 10 substrate is shaped like a cathode, and the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer And (3)-the device can separate the selected prefabricated shell from the temporary substrate. 27. The device of claim 25, wherein the selective deposition device comprises: 15 (1) A device can provide a patterned adhesive cover on a surface of the substrate, and the cover contains at least An opening; (2) the device can conduct a current between an anode and the substrate through at least one opening of the bonding cover in the presence of a plating solution, the anode including an A selected deposition material, and the substrate is shaped like a cathode, so that the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) the cover can be removed by the substrate Device. 28. An electrochemical manufacturing method for making a 3D structure from a plurality of adhesive layers, comprising: 49 1244512 (A) selectively depositing at least a portion of a layer on a first temporary substrate A temporary substrate may include previously deposited material, (B) fabricate a plurality of layers such that subsequent layers are immediately adjacent and adhered to the previously deposited layer; and 5 (C) after forming a plurality of layers, A second temporary substrate is fixed to at least a part of a layer of the structure, at least a part of the first temporary substrate is removed from the structure, and then a structural substrate is fixed to at least a layer of the structure In part, it will at least partially overlap the position where the first temporary substrate was fixed. 10 29. The method of claim 28, wherein the selective deposition operations include: (1) providing an adhered patterned cover on a surface of the substrate, and the cover includes at least one Openings; (2) in the presence of an electroplating solution, a current is conducted between an anode and the substrate through at least one opening of the bonding cover 15, the anode comprising a selected deposition material And the substrate is shaped like a cathode, the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) the cover is removed from the substrate. Body 20 30. An electrochemical manufacturing method for making a 3D structure from a plurality of adhesive layers, comprising: (A) selectively depositing at least a portion of a layer on a first sacrificial substrate, and the Temporary substrates may include previously deposited materials; (B) making a plurality of layers with each subsequent layer in close proximity and adhering to the previous sink 50 1244512 layer; and the manufacturing includes repeating operations (A) a majority of times; (C) in-process After forming a plurality of layers, a substrate containing a structure containing multiple materials and / or a patterned structure is fixed to at least a portion of a layer of the structure, and at least a portion of the temporary substrate is removed from the structure. 5 31. The method according to item 30 of the scope of patent application, further comprising: (A) providing a plurality of prefabricated shells, each of which includes a patterned dielectric material containing at least one opening, and is manufacturing a layer At least a part of the substrate can be deposited through the openings, and each cover includes a supporting structure that can support the patterned dielectric material. 10 At least some of the selective deposition operations include: (1) using The temporary substrate is in contact with a dielectric material of a selected pre-made cover; (2) in the presence of a plating solution, a current is conducted through an anode and the at least one opening of the selected cover; Among the 15 sacrificial materials, the anode contains a selected deposition material, and the temporary substrate is shaped like a cathode, so the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) The selected prefabricated shell is separated by the sacrificial material. 32. The method of claim 30, wherein the selective deposition operations 20 include: (1) providing an adhered patterned cover on a surface of the substrate, and the cover includes at least An opening; (2) in the presence of an electroplating solution, a current is conducted between an anode and the substrate through at least one opening of the bonding cover; the anode 51 1244512 and the blade 3 are selected Deposition material, and the substrate will be selected as a cathode, so the accumulation material will be deposited on the temporary substrate at least-partly, and the plutonium-forming layer (3) is formed by the The cover is removed from the substrate. 33. = A kind of electrochemical manufacturing method made of a majority of adhesive layers, the time base ^ is selectively deposited-at least 1 part of the material layer is-the first temporary soil, § Hai the first temporary substrate can be Including previously deposited materials; 10 Make a majority ^ Make subsequent layers immediately adjacent and tilt to = 1. After the majority layer is made, a second temporary substrate containing most materials and / or a ,,, and / or In the part of the layer of the structure to i, and remove at least a part of the first temporary substrate 15 from the structure, the structure substrate is fixed to at least a part 15 of the layer of the structure. I 'it will at least partially overlap the position where the first-temporary substrate was fixed. 34. The method of claim 33, wherein the selective deposition operations include: (1) providing an adhered patterned cover on a surface 20 of the substrate, and the cover includes at least An opening; (2) in the presence of a plating solution, a current is conducted between an anode and the substrate through the opening to v-opening of the bonding cover, the anode including a selected deposition Material, and the substrate will be shaped like a cathode, so the deposition material selected by the child will be deposited on the temporary substrate to form at least a portion of 52 1244512; and (3) the cover is removed from the substrate. . An electrochemical manufacturing method for manufacturing a multi-segment 3D structure, in which at least one segment is made of a plurality of adhesive layers, the method includes: (A) manufacturing at least one segment of the multi-segment structure, including : (1) selectively depositing at least a part of a material layer on a substrate 'the substrate may include previously deposited materials; (2) fabricate a plurality of layers and make subsequent layers immediately adjacent and adhere to the previously deposited layers 'And the manufacturing includes repeating operations (1) a plurality of times; (B) k for at least one additional section of the multi-segment structure, (C) fixing the at least one section to the at least one additional section, To form the multi-segment structure. 36. The method according to item No. of the patent application, wherein the selective deposition operations include: (1) providing an adhered patterned cover on one surface of the substrate, and the cover includes at least one Opening holes; (2) In the presence of a plating solution, through the bonding cover to: > openings to conduct a current between an anode and the substrate, the anode And the substrate is shaped like a cathode, the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) the cover is removed from the substrate. 37. The method of claim 35, further comprising separating at least one segment of the multi-segment structure by the substrate. 53