TWI265592B - Method of forming contact holes in semiconductor devices and method of forming capacitors using the same - Google Patents
Method of forming contact holes in semiconductor devices and method of forming capacitors using the sameInfo
- Publication number
- TWI265592B TWI265592B TW091113618A TW91113618A TWI265592B TW I265592 B TWI265592 B TW I265592B TW 091113618 A TW091113618 A TW 091113618A TW 91113618 A TW91113618 A TW 91113618A TW I265592 B TWI265592 B TW I265592B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- insulating film
- interlayer insulating
- same
- semiconductor devices
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011229 interlayer Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010035569A KR100604555B1 (ko) | 2001-06-21 | 2001-06-21 | 반도체 소자의 커패시터 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI265592B true TWI265592B (en) | 2006-11-01 |
Family
ID=19711197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091113618A TWI265592B (en) | 2001-06-21 | 2002-06-21 | Method of forming contact holes in semiconductor devices and method of forming capacitors using the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US6566188B2 (zh) |
JP (1) | JP4171249B2 (zh) |
KR (1) | KR100604555B1 (zh) |
DE (1) | DE10227344B4 (zh) |
TW (1) | TWI265592B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112928069A (zh) * | 2021-02-05 | 2021-06-08 | 长鑫存储技术有限公司 | 半导体结构的制作方法及半导体结构 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3466102B2 (ja) * | 1999-03-12 | 2003-11-10 | 沖電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
KR100866126B1 (ko) | 2002-12-20 | 2008-10-31 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
JP4163041B2 (ja) * | 2003-04-24 | 2008-10-08 | 株式会社日立製作所 | 内燃機関の失火判定装置 |
KR100687862B1 (ko) * | 2004-12-16 | 2007-02-27 | 주식회사 하이닉스반도체 | 랜딩 플러그 콘택 제조 방법 |
KR100919676B1 (ko) | 2007-03-19 | 2009-10-06 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
US8481417B2 (en) | 2007-08-03 | 2013-07-09 | Micron Technology, Inc. | Semiconductor structures including tight pitch contacts and methods to form same |
JP2010251406A (ja) * | 2009-04-13 | 2010-11-04 | Elpida Memory Inc | 半導体装置およびその製造方法 |
CN102683271A (zh) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | 一种沉积前金属介电质层薄膜的方法 |
KR20210066989A (ko) | 2019-11-28 | 2021-06-08 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
US11152253B2 (en) * | 2020-01-10 | 2021-10-19 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Semiconductor structure and method for fabricating the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213455A (ja) * | 1982-06-07 | 1983-12-12 | Nec Corp | 半導体装置の製造方法 |
JPH0722145B2 (ja) * | 1984-07-31 | 1995-03-08 | 株式会社リコー | 半導体装置の製造方法 |
US5200358A (en) * | 1991-11-15 | 1993-04-06 | At&T Bell Laboratories | Integrated circuit with planar dielectric layer |
US5468684A (en) * | 1991-12-13 | 1995-11-21 | Symetrix Corporation | Integrated circuit with layered superlattice material and method of fabricating same |
US5314843A (en) * | 1992-03-27 | 1994-05-24 | Micron Technology, Inc. | Integrated circuit polishing method |
KR970004006A (ko) * | 1995-06-30 | 1997-01-29 | 반도체 소자의 캐패시터 제조 방법 | |
US5716890A (en) * | 1996-10-18 | 1998-02-10 | Vanguard International Semiconductor Corporation | Structure and method for fabricating an interlayer insulating film |
KR19980068256A (ko) * | 1997-02-17 | 1998-10-15 | 김광호 | 다결정 실리콘막을 이용한 커패시터의 제조방법 |
JPH10270555A (ja) * | 1997-03-27 | 1998-10-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR100265359B1 (ko) * | 1997-06-30 | 2000-10-02 | 김영환 | 반도체메모리소자의전하저장전극형성방법 |
JP4809961B2 (ja) * | 1998-08-07 | 2011-11-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR100265773B1 (ko) * | 1998-08-12 | 2000-09-15 | 윤종용 | 반도체장치의 접촉창의 제조방법 |
US6015733A (en) * | 1998-08-13 | 2000-01-18 | Taiwan Semiconductor Manufacturing Company | Process to form a crown capacitor structure for a dynamic random access memory cell |
US6215187B1 (en) * | 1999-06-11 | 2001-04-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
KR20010019176A (ko) * | 1999-08-25 | 2001-03-15 | 윤종용 | 커패시터 형성 방법 |
KR100323832B1 (ko) * | 1999-08-25 | 2002-02-07 | 윤종용 | 고용량을 갖는 캐패시터의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
-
2001
- 2001-06-21 KR KR1020010035569A patent/KR100604555B1/ko not_active IP Right Cessation
-
2002
- 2002-06-19 DE DE10227344A patent/DE10227344B4/de not_active Expired - Fee Related
- 2002-06-19 JP JP2002178445A patent/JP4171249B2/ja not_active Expired - Fee Related
- 2002-06-21 US US10/177,950 patent/US6566188B2/en not_active Expired - Lifetime
- 2002-06-21 TW TW091113618A patent/TWI265592B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112928069A (zh) * | 2021-02-05 | 2021-06-08 | 长鑫存储技术有限公司 | 半导体结构的制作方法及半导体结构 |
Also Published As
Publication number | Publication date |
---|---|
KR100604555B1 (ko) | 2006-07-28 |
KR20020096745A (ko) | 2002-12-31 |
DE10227344B4 (de) | 2011-06-16 |
DE10227344A1 (de) | 2003-02-27 |
US6566188B2 (en) | 2003-05-20 |
JP4171249B2 (ja) | 2008-10-22 |
US20020197813A1 (en) | 2002-12-26 |
JP2003078035A (ja) | 2003-03-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |