TWI263691B - Sputtering target and method for producing the same - Google Patents

Sputtering target and method for producing the same

Info

Publication number
TWI263691B
TWI263691B TW92104304A TW92104304A TWI263691B TW I263691 B TWI263691 B TW I263691B TW 92104304 A TW92104304 A TW 92104304A TW 92104304 A TW92104304 A TW 92104304A TW I263691 B TWI263691 B TW I263691B
Authority
TW
Taiwan
Prior art keywords
sputtering target
sintered body
sputtering
oxide
producing
Prior art date
Application number
TW92104304A
Other languages
Chinese (zh)
Other versions
TW200303931A (en
Inventor
Masanori Kogo
Toshio Inao
Masahito Uchida
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of TW200303931A publication Critical patent/TW200303931A/en
Application granted granted Critical
Publication of TWI263691B publication Critical patent/TWI263691B/en

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  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Ceramic Products (AREA)

Abstract

A sputtering target is characterized in that the sputtering target will not form cracking, be damaged or generate abnormal discharge during sputtering, and can perform stable sputtering at a high speed, and can obtain a phase change photo recording medium with excellent recording regeneration characteristics under high productivity. The sputtering target is formed of a sintered body sintered from more than one oxide and more than one carbide. Furthermore, the sintered body contains 0.1 wt% to 20 wt% of carbon content, and has a relative density of more than 70%. Particularly, the sintered body is formed of Mo oxide and silicon carbide, and contains 0.1 wt% to 20 wt% of silicon carbide, and has a relative density of more than 70%.
TW92104304A 2002-02-28 2003-02-27 Sputtering target and method for producing the same TWI263691B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002054738 2002-02-28

Publications (2)

Publication Number Publication Date
TW200303931A TW200303931A (en) 2003-09-16
TWI263691B true TWI263691B (en) 2006-10-11

Family

ID=27784598

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92104304A TWI263691B (en) 2002-02-28 2003-02-27 Sputtering target and method for producing the same

Country Status (2)

Country Link
CN (1) CN1441082A (en)
TW (1) TWI263691B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5651095B2 (en) * 2010-11-16 2015-01-07 株式会社コベルコ科研 Oxide sintered body and sputtering target
JP2013047361A (en) * 2011-08-29 2013-03-07 Mitsubishi Materials Corp Sputtering target, method for production thereof, thin film using the target, and thin film sheet and laminated sheet provided with the thin film
CN108655403B (en) * 2018-06-25 2020-08-28 河南科技大学 Preparation method of high-purity tantalum target material for electronic material
JP2020041217A (en) * 2018-09-07 2020-03-19 三菱マテリアル株式会社 Optical functional film, sputtering target, and method for manufacturing sputtering target

Also Published As

Publication number Publication date
CN1441082A (en) 2003-09-10
TW200303931A (en) 2003-09-16

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees