TWI260312B

TWI260312B - Method for forming ceramic microstructures on a substrate using a mold and articles formed by the method

Info

Publication number: TWI260312B
Application number: TW091121595A
Authority: TW
Inventors: Raymond Chi-Hing Chiu
Original assignee: 3M Innovative Properties Co
Priority date: 2001-10-09
Filing date: 2002-09-20
Publication date: 2006-08-21
Also published as: KR20050023214A; JP2005536830A; CA2462962A1; DE60221267T2; EP1442468A2; CN1565041A; EP1818967A3; DE60221267D1; EP1442468B1; US7176492B2; ATE367647T1; EP1818967A2; WO2003032354A3; US20030100192A1; KR100909756B1; CN100481302C; WO2003032354A2; US7429345B2; US20060087055A1

Abstract

A microstructured assembly including a barrier portions and land portions is described. The microstructures have alternating barrier portions and land portions that have barrier surfaces and land surfaces, respectively. Each barrier surface and land surface is connected by curved surface, which is part of a curved portion. The curved surface and the land surface are substantially continuous.

Description

1260312 A7 B71260312 A7 B7

1260312 五、發明説明（2 ) 致燃燒將玻璃顆粒在基材上熔融於定位。然而，在諸如PDP 基材之應用中，須要具極少或沒有瑕疲或破裂之高度精密及均勻的障壁肋條。此尤其在將模型自原始狀態障壁移除之過程中及在燃燒原始狀態障壁肋條之過程中會造成困難。移除模型會由於脫模的困難而損壞障壁。由於障壁肋條在燃燒過程中有收縮的傾向，因而原始狀態障壁肋條一般較熔融障壁的期望尺寸高。較高的結構會使得脫模更加困難。移除模型亦會損壞模型。當無法將材料自模型完全移除時’典型上將模型丟棄。此外，在燃燒所需之溫度下，障壁肋條會破裂，自基材脫層，或彎曲。基材在燃燒過程中亦會經歷因熱膨脹及内部應力之釋放所致的尺寸變化。亦可將微結構，諸如障壁肋條，使用於其他的應用中。發明概要一般而言，本發明係關於具有設置於基材上之微結構的物件及裝置，及此等物件及裝置之製造方法。pDp及其他顯不器裝置係此種物件及裝置之例子。一具體實施例係微結構化的組合。此微結構具有交替的障壁部分及地面部分，其分別具有障壁表面及地面表面。各障壁表面及地面表面係由曲面（其係曲線部分的部分）相連。曲面及地面表面實質上為連續。本發明之另一具體實施例係微結構化的組合。此組合包括於具有可編址電極之圖案之玻璃基材上模塑及硬化的陶瓷微結構。此微結構具有交替的障壁部分及地面部分，其本紙張尺度適用中關家襟靴㈣趟故 -5- 1260312 A7 --------------51 五、發明説明（3 ) 刀別具有障壁表面及地面表面。各障壁表面及地面表面係由曲面（其係曲線部分的部分）相連。曲面及地面表面實質上為連續。微結構之地面部分亦與玻璃基材之電極的圖案對準。本發明之另一具體實施例係微結構化的組合。此組合包括於基材上模塑及硬化的微結構。此微結構包括交替的障壁部分及地面部分。障壁部分於其頂部之寬度不多於75微米。本發明之另一具體實施例係微結構化的組合。此組合包括於基材上模塑及硬化的微結構。此微結構具有交替的障壁部分及地面部分，其分別具有障壁表面及地面表面。障壁部分亦具有階梯形狀的末端。本發明之另一具體實施例係微結構化組合之製造方法。將一可固化材料設置於圖案化基材上。一模型將材料成形成具有交替障壁部分及地面部分（其分別具有障壁表面及地面表面）之微結構。各障壁表面及地面表面係由曲面（其係曲線部分的部分）相連。曲面及地面表面實質上為連續。將模型移除。視需要將材料固化或處理，以使微結構硬化。視需要將模型拉伸，以使微結構與圖案化基材對準。本發明之另一具體實施例係微結構化組合之製造方法。將包含陶瓷粉末及可固化易變黏合劑之料漿設置於經電極圖案化之玻璃基材上。利用模型將料漿成形成具有交替障壁部分及地面部分（其分別具有障壁表面及地面表面）之微結構。各障壁表面及地面表面係由曲面（其係曲線部分的部 -6 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1260312 A7 B7 五、發明説明（4 ) 分）相連。曲面及地面表面實質上為連續。使黏合劑固化，以使料漿硬化，及使料漿黏著至基材。將模型移除，而於基材上留下複製模型之圖案的原始狀態微結構。將原始狀態微結構脫黏及燃燒，以燒盡黏合劑及燒結陶瓷粉末，而形成陶瓷微結構。另一具體實施例係將微結構之障壁末端成形之方法。將重物外加至原始狀態微結構之障壁末端。重物之一部分的底部與障壁末端之頂部角落接觸。將微結構燃燒，及將重物移除。圖式簡單說明結合附圖考慮以下之本發明之各種具體實施例之詳述將可更完整明瞭本發明，其中：圖1係電漿顯示器面板組合之立體概略圖式；圖2係於圖案化基材上模塑及對準之微結構的橫向橫剖面概略圖式；圖3係將模型自原始狀態微結構移除之方法的概略圖式；圖4係於圖案化基材上之微結構的橫向橫剖面概略圖式，其顯示自原始狀態收縮的圖案；圖5係陶瓷微結構障壁部分之末端的橫向橫剖面概略圖式’其顯示自原始狀態收縮的圖案；圖6係於基材上之具有曲率之微結構之第一具體實施例的橫向橫剖面概略圖式；圖7係於基材上之具有曲率之微結構之第二具體實施例的橫向橫剖面概略圖式；本紙張尺度適财國S家鮮(CNS) A4規格(2ΐ〇χϋ^7 12603121260312 V. INSTRUCTIONS (2) Causes combustion The glass particles are melted on the substrate for positioning. However, in applications such as PDP substrates, highly precise and uniform barrier ribs with little or no fatigue or rupture are required. This can be particularly problematic during the removal of the model from the original state barrier and during the burning of the original barrier ribs. Removing the model can damage the barrier due to difficulty in demolding. Since the barrier ribs tend to shrink during combustion, the original state barrier ribs are generally higher than the desired dimensions of the molten barrier. A higher structure makes demolding more difficult. Removing the model will also damage the model. When the material cannot be completely removed from the model, the model is typically discarded. In addition, the barrier ribs may rupture, delaminate, or bend from the substrate at the temperatures required for combustion. The substrate undergoes dimensional changes due to thermal expansion and release of internal stress during combustion. Microstructures, such as barrier ribs, can also be used in other applications. SUMMARY OF THE INVENTION In general, the present invention relates to articles and devices having microstructures disposed on a substrate, and methods of making such articles and devices. pDp and other display devices are examples of such objects and devices. A specific embodiment is a combination of micro-structuring. The microstructure has alternating barrier portions and ground portions, each having a barrier surface and a ground surface. Each of the barrier surfaces and the surface of the barrier are connected by a curved surface (the portion of the curved portion). The curved surface and the ground surface are essentially continuous. Another embodiment of the invention is a combination of microstructures. This combination includes a ceramic microstructure molded and hardened on a glass substrate having a pattern of addressable electrodes. The microstructure has alternating barrier portions and ground portions, and the paper scale is suitable for Zhongguanjia ankle boots (4). Therefore -5- 1260312 A7 -------------- 51 V. Invention description ( 3) The knife has a barrier surface and a ground surface. The barrier surfaces and the surface of the barrier are connected by a curved surface (the portion of the curved portion). The curved surface and the ground surface are substantially continuous. The ground portion of the microstructure is also aligned with the pattern of the electrodes of the glass substrate. Another embodiment of the invention is a combination of microstructures. This combination includes a microstructure that is molded and hardened on a substrate. This microstructure includes alternating barrier portions and ground portions. The barrier portion has a width of no more than 75 microns at the top. Another embodiment of the invention is a combination of microstructures. This combination includes a microstructure that is molded and hardened on a substrate. The microstructure has alternating barrier portions and floor portions having a barrier surface and a floor surface, respectively. The barrier portion also has a stepped end. Another embodiment of the invention is a method of making a microstructured combination. A curable material is placed on the patterned substrate. A model shapes the material into a microstructure having alternating barrier portions and ground portions, each having a barrier surface and a ground surface. The barrier surfaces and the ground surface are connected by curved surfaces (portions of the curved portions). The curved surface and the ground surface are substantially continuous. Remove the model. The material is cured or treated as needed to harden the microstructure. The model is stretched as needed to align the microstructure with the patterned substrate. Another embodiment of the invention is a method of making a microstructured combination. A slurry comprising a ceramic powder and a curable variable binder is placed on the electrode patterned glass substrate. The slurry is formed into a microstructure having alternating barrier portions and ground portions (which respectively have a barrier surface and a ground surface). The surface of each barrier and the surface of the barrier are curved (the part of the curved part is -6 - the paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1260312 A7 B7 V. Invention description (4) points) Connected. The curved surface and the ground surface are substantially continuous. The binder is cured to harden the slurry and to adhere the slurry to the substrate. The model is removed leaving the original state microstructure of the pattern of the replicated model on the substrate. The original microstructure is debonded and burned to burn off the binder and the sintered ceramic powder to form a ceramic microstructure. Another embodiment is a method of forming the barrier ends of the microstructures. The weight is applied to the end of the barrier at the original state microstructure. The bottom of one of the weights is in contact with the top corner of the end of the barrier. Burn the microstructure and remove the weight. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be more fully understood from the following detailed description of the embodiments of the invention, wherein: FIG. 1 is a perspective view of a plasma display panel assembly; FIG. 2 is a patterning A schematic cross-sectional view of a cross-section of a microstructure molded and aligned on a substrate; Figure 3 is a schematic representation of a method of removing a model from an original state microstructure; Figure 4 is a microstructure of a patterned substrate A transverse cross-sectional schematic view showing a pattern contracted from the original state; FIG. 5 is a transverse cross-sectional schematic view of the end of the ceramic microstructured barrier portion 'which shows a pattern that shrinks from the original state; FIG. 6 is a substrate A transverse cross-sectional schematic view of a first embodiment of a microstructure having curvature; FIG. 7 is a transverse cross-sectional schematic view of a second embodiment of a microstructure having curvature on a substrate; Scale suitable for the country S home fresh (CNS) A4 specifications (2ΐ〇χϋ^7 1260312

圖8係於基材上之具有曲率之微結構之第三具體實施例的橫向橫剖面概略圖式；圖9係具有降低障壁部分寬度之微結構之一具體實施例的橫向橫剖面概略圖式；圖10係具有階梯末端之微結構障壁部分之第一具體實施例的橫向橫剖面概略圖式；Figure 8 is a transverse cross-sectional schematic view of a third embodiment of a microstructure having curvature on a substrate; Figure 9 is a schematic transverse cross-sectional view of a specific embodiment of a microstructure having a reduced width of the barrier portion. Figure 10 is a transverse cross-sectional schematic view of a first embodiment of a microstructured barrier portion having a stepped end;

圖π係具有階梯末端之微結構障壁部分之第二具體實施例的橫向橫剖面概略圖式；圖12係具有錐形末端之微結構障壁部分之橫向橫剖面概略圖式；圖13係具有重物之微結構障壁部分之橫向橫剖面概略圖式；及圖14係微結構之一部分表面之概略圖式的橫剖面圖。訂Figure π is a transverse cross-sectional schematic view of a second embodiment of a microstructured barrier portion having a stepped end; Figure 12 is a schematic transverse cross-sectional view of a microstructured barrier portion having a tapered end; Figure 13 is heavy A schematic transverse cross-sectional view of the microstructured barrier portion of the object; and Figure 14 is a cross-sectional view of a schematic view of a portion of the surface of the microstructure. Order

線雖然本發明可有各種修改及替代形式，但於圖式中舉例顯示其之明確細節，且將作詳細說明。然而，應明瞭其並非要將本發明限制至所說明的特殊具體實施例。相對地，其係要涵蓋在本發明之精神及範圍内的所有修改、相等物、及替代物。詳述先前已有人說明可將微結構於圖案化基材上準確模塑及成形之方法。舉例來說，PCT專利公告第WO/0038829號及美國專利申請案第09/219, 803號說明將陶瓷障壁微結構於電極圖案化基材上模塑及對準。PCT專利公告第WO/0038829 號及美國專利申請案第09/219, 803號說明尤其有用於電子 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 1260312While the invention may be susceptible to various modifications and alternatives, the details are shown in the drawings and are described in detail. However, it should be understood that the invention is not limited to the specific embodiments described. Rather, all modifications, equivalents, and alternatives are intended to be included within the spirit and scope of the invention. DETAILED DESCRIPTION Methods for accurately molding and shaping microstructures onto patterned substrates have been previously described. For example, PCT Patent Publication No. WO/0038829 and U. PCT Patent Publication No. WO/0038829 and U.S. Patent Application Serial No. 09/219, No. 803, the disclosure of which is incorporated herein by reference in its entirety to the extent of the application of the Chinese National Standard (CNS) A4 specification (210X297 mm) 1260312

顯不器，諸如PDP及PALC顯示器之陶瓷障壁微結構（其中像元係經由在相對基材之間之電漿產生而編址或照明）的成形方法。於同曰提出申請之美國專利申請案，標題為「利用模型於基材上成形微結構之方法（METfl〇D F〇R f〇rming MICROSTRUCTURES ON A SUBSTRATE USING A MOLD)」，案號56390US002，說明利用模型於基材上製造陶竞微結構之方法。如圖1所說明，此種電漿顯示器具有各種基材元件。方向遠離觀看者之背侧基材元件具有背侧基材21，其具有可獨立編址的平行電極23。背侧基材21可由各種組合物，例如，玻璃、陶瓷、金屬 '或塑膠形成。陶瓷微結構25包括設置於背側電極23之間的障壁部分32及其中沈積紅色（R)、綠色（G)、及藍色（B)鱗光質之個別區域。前側基材元件包括玻璃基材51及一組可獨立編址的平行電極53。前側電極53 (亦稱為維持電極）係垂直於背侧電極23(亦稱為編址電極）定向。在一完成的顯示器中，將在前側及背侧基材元件之間的區域填充惰性氣體。為點亮像元，在相交的維持5 3及編址電極23之間施加足夠強度的電場，以使其間的惰性氣體原子激發。激發惰性氣體原子發射uv(紫外）輻射，其導致燐光質發射红色、綠色、或藍色可見光。背侧基材21係透明玻璃基材較佳。典型上，背侧基材21 係由視需要可實質上不含鹼金屬之鹼石灰玻璃製成。在加工過程中達到之溫度會造成在基材中在鹼金屬之存在下之電極材料的遷移。此遷移會於電極之間產生導電性路徑， -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 1260312 A7 B7A forming method, such as a ceramic barrier microstructure of a PDP and a PALC display in which the pixel system is addressed or illuminated via plasma generation between opposing substrates. U.S. Patent Application Serial No. entitled "Method for Forming Microstructures on a Substrate Using a Model (METfl〇 DF〇R f〇rming MICROSTRUCTURES ON A SUBSTRATE USING A MOLD)", Case No. 56390US002, illustrating the use The method of making a Tao Jing microstructure on a substrate. As illustrated in Figure 1, such a plasma display has various substrate components. The backside substrate member that is oriented away from the viewer has a backside substrate 21 with parallelizable electrodes 23 that are individually addressable. The back side substrate 21 can be formed of various compositions such as glass, ceramic, metal 'or plastic. The ceramic microstructure 25 includes a barrier portion 32 disposed between the backside electrodes 23 and an individual region in which red (R), green (G), and blue (B) scales are deposited. The front side substrate member includes a glass substrate 51 and a set of independently addressable parallel electrodes 53. The front side electrode 53 (also referred to as a sustain electrode) is oriented perpendicular to the back side electrode 23 (also referred to as an addressed electrode). In a completed display, the area between the front side and back side substrate elements is filled with an inert gas. To illuminate the pixel, an electric field of sufficient strength is applied between the intersecting sustain 5 3 and the addressed electrode 23 to excite the inert gas atoms therebetween. The excited inert gas atom emits uv (ultraviolet) radiation, which causes the phosphorescence to emit red, green, or blue visible light. The back substrate 21 is preferably a transparent glass substrate. Typically, the backside substrate 21 is made of soda lime glass which may be substantially free of alkali metal, if desired. The temperature reached during processing causes migration of the electrode material in the presence of an alkali metal in the substrate. This migration creates a conductive path between the electrodes, -9- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1260312 A7 B7

因而使相鄰的電極短路，或在電極之間造成稱為Γ串音」之不期望的電干擾。背側基材21應可承受燒結或燃燒陶竟障壁材料所需之溫度。燃燒溫度可自約4〇〇 °c至1600 °C寬廣地變化，但製造於鹼石灰玻璃基材上之PDP的典型燃燒溫度係視料漿中之陶瓷粉末的軟化溫度而自約4〇〇°c至約6〇〇。刖側基材51係一透明玻璃基材，其以具有與背側基材21 相同或大約相同的熱膨脹係數較佳。As a result, adjacent electrodes are shorted or an undesirable electrical disturbance called "crosstalk" is caused between the electrodes. The backside substrate 21 should be able to withstand the temperatures required to sinter or burn the ceramic barrier material. The combustion temperature can vary widely from about 4 ° C to 1600 ° C, but the typical combustion temperature of a PDP fabricated on a soda lime glass substrate is from about 4 软化 to the softening temperature of the ceramic powder in the slurry. °c to about 6 inches. The side substrate 51 is a transparent glass substrate which preferably has the same or about the same thermal expansion coefficient as the back substrate 21.

訂Order

線電極係導電性材料之長條。典型上，電極為含銅、鋁、或銀的導電性玻料。電極亦可由透明導電性氧化物材料，諸如銦錫氧化物製成，尤其係在希望具有透明顯示器面板的情況中。電極係於背側基材21之上或之中圖案化。舉例來說’可將電極形成為隔開約120微米至360微米，寬度約 50微米至75微米，厚度約2微米至15微米，及長度跨越整個有效顯示器面積（其可自數公分至數十公分）的平行長條。在一些情況中，背側電極23之寬度可視微結構25之構造而 ’例如，較50微米窄或較75微米寬。舉例來說，在高鮮明度的電漿顯示器面板中，電極之寬度低於5〇微米較佳。用於形成微結構25之材料典型上包括可經由燃燒而溶融或燒結形成硬質、實質上密實之介電結構的陶瓷顆粒。微結構25之陶瓷材料係不含鹼金屬較佳，且可包括玻璃及其他的非結晶氧化物。於玻璃玻料或陶瓷粉末中存在鹼金屬會導致導電性材料之不期望的自電極遷移於基材上。形成障壁之陶瓷材料具有較基材之軟化溫度低的軟化溫度。軟化溫度係玻璃或陶瓷材料可熔融成具有極少或沒有表面相 -10-Wire electrode is a strip of conductive material. Typically, the electrode is a conductive glass containing copper, aluminum, or silver. The electrodes may also be made of a transparent conductive oxide material, such as indium tin oxide, especially where it is desired to have a transparent display panel. The electrodes are patterned on or in the backside substrate 21. For example, the electrodes can be formed to be spaced apart from about 120 microns to 360 microns, from about 50 microns to 75 microns in width, from about 2 microns to 15 microns in thickness, and across the entire effective display area (which can range from a few centimeters to tens of Parallel strips of centimeters). In some cases, the width of the backside electrode 23 can be seen from the configuration of the microstructures 25', e.g., narrower than 50 microns or wider than 75 microns. For example, in a high-definition plasma display panel, the width of the electrodes is preferably less than 5 μm. The materials used to form the microstructures 25 typically include ceramic particles that can be melted or sintered via combustion to form a hard, substantially dense dielectric structure. The ceramic material of the microstructure 25 is preferably free of alkali metals and may include glass and other non-crystalline oxides. The presence of an alkali metal in the glass frit or ceramic powder can cause undesirable migration of the conductive material from the electrode onto the substrate. The ceramic material forming the barrier has a softening temperature lower than the softening temperature of the substrate. The softening temperature is glass or ceramic material that can be melted to have little or no surface phase. -10-

1260312 A7 _ B7 五、發明説明（8 ) ^ ~~ 連孔隙度之相當密實結構的最低溫度。料漿之陶瓷材料的軟化溫度係不多於約60(rC較佳，不多於約56〇它更佳及不多於約500C最佳。微結構25之材料具有在玻璃基材之膨脹係數之ίο%内的熱膨脹係數較佳。微結構25與背側基材21 之膨脹係數的密切配合使在加工過程中損壞微結構25的機會降低。此外，熱膨脹係數的差異會造成顯著的基材彎曲或斷裂。 PDP中之障壁部分32可具有，例如，約微米至約微米之南度及約20微米至約80微米之寬度。障壁之節距 (單位橫向橫剖面單位長度之障壁數）以與電極之節距相符較佳。 PCT專利公告第ffo/0038829號，美國專利申請案第 09/219, 803號，及於同日提出申請之美國專利申請案，標題為「利用模型於基材上成形微結構之方法」，案號 56390US002，說明於圖案化基材上成形及對準微結構之^ 法種方法係經由將包含可固化材料之混合物置於圖案化基材與模型之圖案化表面之間而進行。圖2說明模型3〇，形成微結構25之可固化材料，及具有背侧電極23之背側基材21的橫向橫剖面。模型30之圖案化表面可由在模型3〇與背側基材21之間之可固化材料形成複數個微結構25。視需要可將模型30拉伸，以使模型30之圖案化表面的預定部分與圖案化背侧基材21之相對的預定部分對準，如由背側電極23之間隔所定義。用於在圖案化背側基材21上形成微結構25之材料可以各 -11 -1260312 A7 _ B7 V. INSTRUCTIONS (8) ^ ~~ The lowest temperature of a fairly dense structure with porosity. The softening temperature of the ceramic material of the slurry is not more than about 60 (rC is preferably not more than about 56 Å, preferably more than about 500 C. The material of the microstructure 25 has a coefficient of expansion on the glass substrate. The coefficient of thermal expansion within ί% is preferred. The close cooperation of the microstructures 25 with the expansion coefficient of the backside substrate 21 reduces the chance of damage to the microstructures 25 during processing. Furthermore, differences in thermal expansion coefficients result in significant substrates. Bending or breaking. The barrier portion 32 in the PDP can have, for example, a width of from about micrometers to about micrometers and a width of from about 20 micrometers to about 80 micrometers. The pitch of the barrier walls (the number of barriers per unit length of the transverse cross-section of the unit) is The PCT Patent Publication No. ffo/0038829, U.S. Patent Application Serial No. 09/219, No. 803, and the U.S. Patent Application Serial No. Method of Forming Microstructures, Case No. 56390 US002, illustrates the method of forming and aligning microstructures on a patterned substrate by patterning a mixture comprising a curable material onto a patterned substrate and a model Between the faces, Figure 2 illustrates the model 3〇, the curable material forming the microstructure 25, and the transverse cross-section of the backside substrate 21 having the backside electrode 23. The patterned surface of the model 30 can be modeled in the model 3〇 A plurality of microstructures 25 are formed from the curable material between the backside substrate 21. The mold 30 can be stretched as needed to have a predetermined portion of the patterned surface of the mold 30 opposite the patterned backside substrate 21. The predetermined partial alignment is as defined by the spacing of the backside electrodes 23. The material used to form the microstructures 25 on the patterned backside substrate 21 can be each -11 -

1260312 A7 「 —__B7 五、發明説明（9 ) 種方式置於模型30與背側基材21之間。可將材料直接置於模型30之圖案中’隨後再將模型30及材料置上;可將材料置於背侧基材21上，隨後再;模== 背側基材21上之材料上；可將材料置於背侧基材以上，然後再與模型30接觸；或可當利用機械或其他方式使模型3〇及背側基材21靠在一起時，將材料引入至模型3〇與背側基材21之間的間隙中。用於將材料置於模型3〇與背側基材21 之間的方法尤其係視待形成於背側基材21上之微結構25的長徑比（aspect ratio)、微結構形成材料之黏度、及模型 30之剛性而定。一般而言，具有高度相對於其寬度而言大的微結構2 5 (咼長徑比的結構）係利用具有相當深之刻紋的模型30。在此等情況，視材料之黏度而定，除非利用一些力將材料注入至模型30之刻紋中，否則可能很難將模型3〇之刻紋完全填充。將模型30之刻紋完全填充，同時使氣泡或二氣囊之引入於材料中減至最小較佳。當將可固化材料置於模型30與背側基材21之間時，可於貪侧基材21與模型3 0之間施加壓力，以設定地面部分3 4之厚度，如同圖2。地面部分34大致係在障壁部分32之間之微結構25的部分，且其部分環繞背側電極23或係設置於背側電極23上方。如須要零厚度的地面部分34，則可將模型3〇填充材料，然後再在與背側基材21接觸之前使用刀片或刮墨刀將任何過剩的材料自模型3〇移除較佳。對於其他的應用，可能希望具有非零厚度的地面部分34。在PDP的情況中 ’形成微結構25之材料一般為介電質，且地面部分34之厚 -12- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公釐） 1260312 A7 _____ B7 I、發明説明（10~~" 度決定設置於背侧電極23上之介電材料的厚度。因此，對於PDP，地面部分34之厚度對於決定要在背側電極23與維持電極53之間施加何種電壓，以產生電漿及使圖像元件活化可能相當重要。於模型30之圖案與基材之圖案對準之後，使模型3〇與背侧基材21之間之材料固化，而形成黏著至背侧基材2丨之表面的原始狀態微結構45。可將在脫黏之前的微結構稱為原始狀態微結構。材料之固化可視所使用之黏合劑樹脂而以各種方式進行。舉例來說，材料可使用可見光、紫外光、電子束輻射、其他形式之輻射、熱固化、或自熔融態冷卻至固化狀態而固化。當利用輻射固化時，輻射可行進通過背側基材21，通過模型30，或通過背侧基材21及模型30。所選擇之固化系統可促進固化材料之黏著至背側基材21較佳。因此，在使用在硬化及輻射固化過程中有收縮傾向之材料的情況中，材料係經由透過背側基材21輻照而固化較佳。如材料僅透過模型30而固化，則材料會在固化過程中經由收縮自背側基材21拉離，因而不利地影響對背侧基材 21之黏著。在本申請案中，可固化係指可如前所述而固化之材料。於使材料固化形成黏著至背侧基材21表面及與背側基材 21之圖案對準的原始狀態微結構45之後，可將模型3〇移除。提供可拉伸的軟質模型30由於可將模型30向後剝離，以致脫模力可集中於較小的表面積上，而可促進模型30的移除。如圖3所示，當將具有障壁部分32之原始狀態微結構45 -13- 本紙張尺度適用中國國豕標準(CNS) A4規格(210 X 297公爱） 1260312 A7 Γ________Β7 五、發明説明（彳1 ) 模塑時，經由沿與障壁部分32及模型3〇之圖案平行之方向向後剝離，而將模型30移除較佳。此可降低在模型移除過程中垂直施加於障壁部分32之壓力，因而減低損壞障壁部分32的可能性。將脫模劑包含作為在模型3〇之圖案化表面上的塗層’或包含在用於形成微結構25本身的材料中較佳。當形成較高長徑比的結構時，脫模劑材料會變得更為重要。較高長徑比的結構會使得脫模更為困難，且會導致對微結構25的損壞。如以上所論述，自背側基材21側固化材料不僅有助於改良硬化原始狀態微結構45對背側基材21之黏著’並且可使原始狀態微結構45在固化過程中朝背侧基材21收縮，因而自模型30拉離而可較容易地脫模。於將模型30移除後，留下其上黏著與背側基材21之圖案對準之複數個硬化原始狀態微結構45的圖案化背側基材21 。此可視應用而為完成產品。在其他的應用中，硬化材料包含黏合劑，其以經由在高溫下脫黏而移除較佳。於將黏合劑脫黏或燒盡之後，進行原始狀態微結構之燃燒，以使玻璃顆粒熔融或使陶瓷顆粒燒結於微結構材料中。此可提高微結構25之強度及剛性。在燃燒過程中當微結構25密實化時，亦會發生收縮。圖4說明於在具有圖案化背側電極23 之背側基材21上燃燒後之陶瓷微結構25。燃燒使微結構25 密實化，以致其之側面如圖所示自原始狀態微結構45之側面稍微收縮。如圖所示，經燃燒之微結構25維持其之位置及其之根據背侧基材21圖案的節距。對於PDP顯示器的應用，將燐光質材料塗布至微結構25 -14- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐）1260312 A7 ―___B7 V. INSTRUCTION DESCRIPTION (9) Between the model 30 and the backside substrate 21. The material can be placed directly in the pattern of the model 30. The model 30 and the material can then be placed; The material is placed on the backside substrate 21, and subsequently; the mold == on the backside substrate 21; the material can be placed over the backside substrate and then in contact with the mold 30; or Or otherwise, when the model 3〇 and the backside substrate 21 are brought together, the material is introduced into the gap between the mold 3〇 and the backside substrate 21. For placing the material in the model 3〇 and the dorsal base. The method between the materials 21 depends, in particular, on the aspect ratio of the microstructures 25 to be formed on the backside substrate 21, the viscosity of the microstructure forming material, and the rigidity of the mold 30. In general, A microstructure 2 5 having a height relative to its width (a structure having a length to diameter ratio) utilizes a model 30 having a relatively deep embossing. In this case, depending on the viscosity of the material, unless some force is utilized Inject the material into the pattern of the model 30, otherwise it may be difficult to finish the pattern Filling. The filling of the pattern 30 is completely filled, while the introduction of the bubble or the two airbags into the material is minimized. When the curable material is placed between the model 30 and the backside substrate 21, it can be greedy. Pressure is applied between the side substrate 21 and the mold 30 to set the thickness of the ground portion 34, as in Figure 2. The ground portion 34 is generally attached to the portion of the microstructure 25 between the barrier portions 32, and partially surrounds the back side. The electrode 23 is either disposed above the backside electrode 23. If a zero thickness of the ground portion 34 is required, the mold can be filled with the material and then any excess can be used using a blade or doctor blade prior to contact with the backside substrate 21. The material is preferably removed from the mold 3. For other applications, it may be desirable to have a ground portion 34 of non-zero thickness. In the case of a PDP, the material forming the microstructure 25 is typically dielectric and the ground portion 34 Thick -12- This paper scale applies to China National Standard (CNS) A4 specification (21〇X 297 mm) 1260312 A7 _____ B7 I, invention description (10~~" degree determines the dielectric set on the back side electrode 23. The thickness of the material. Therefore, for PDP The thickness of the ground portion 34 may be important in determining what voltage is to be applied between the backside electrode 23 and the sustain electrode 53 to produce plasma and activate the image element. The pattern of the pattern 30 is aligned with the pattern of the substrate. Thereafter, the material between the mold 3〇 and the backside substrate 21 is solidified to form the original state microstructure 45 adhered to the surface of the backside substrate 2丨. The microstructure before debonding can be referred to as the original state. Microstructure. The curing of the material can be carried out in various ways depending on the binder resin used. For example, the material can be cooled, cured, or cured from visible light, ultraviolet light, electron beam radiation, other forms of radiation, heat curing, or self-melting state. Solidified by the state. When cured by radiation, the radiation can travel through the backside substrate 21, through the mold 30, or through the backside substrate 21 and the mold 30. The curing system selected promotes adhesion of the cured material to the backside substrate 21. Therefore, in the case of using a material having a tendency to shrink during hardening and radiation curing, the material is preferably cured by irradiation through the back substrate 21. If the material is cured only by the mold 30, the material is pulled away from the back side substrate 21 by shrinkage during the curing process, thereby adversely affecting the adhesion to the back side substrate 21. In the present application, curable means a material which can be cured as described above. After the material is cured to form the original state microstructures 45 adhered to the surface of the backside substrate 21 and aligned with the pattern of the backside substrate 21, the mold 3 can be removed. Providing the stretchable soft model 30 allows the mold 30 to be peeled back so that the release force can be concentrated on a smaller surface area, which facilitates the removal of the mold 30. As shown in Fig. 3, when the original state microstructure of the barrier portion 32 is used 45 - 13 - the paper scale is applied to the Chinese National Standard (CNS) A4 specification (210 X 297 public) 1260312 A7 Γ ________ Β 7 V. Description of the invention (彳1) When molding, it is preferable to remove the mold 30 by peeling backward in a direction parallel to the pattern of the barrier portion 32 and the pattern 3〇. This reduces the pressure applied perpendicularly to the barrier portion 32 during the removal of the mold, thereby reducing the likelihood of damaging the barrier portion 32. It is preferred to include the release agent as a coating on the patterned surface of the mold 3 or in the material for forming the microstructure 25 itself. The release agent material becomes more important when forming a structure with a higher aspect ratio. A higher aspect ratio structure can make demolding more difficult and can result in damage to the microstructures 25. As discussed above, the cured material from the side of the back side substrate 21 not only contributes to improving the adhesion of the hardened original state microstructures 45 to the back side substrate 21 but also allows the original state microstructures 45 to be oriented toward the back side during the curing process. The material 21 shrinks and is thus easily pulled off from the mold 30. After the mold 30 is removed, the patterned backside substrate 21 having a plurality of hardened original state microstructures 45 adhered thereto in alignment with the pattern of the backside substrate 21 is left. This visual application is the finished product. In other applications, the hardening material comprises a binder which is preferably removed by debonding at elevated temperatures. After the binder is debonded or burned, the original state microstructure is burned to melt the glass particles or to sinter the ceramic particles in the microstructured material. This improves the strength and rigidity of the microstructures 25. Shrinkage also occurs when the microstructures 25 are densified during the combustion process. 4 illustrates the ceramic microstructure 25 after combustion on the backside substrate 21 having the patterned backside electrode 23. The combustion densifies the microstructures 25 such that their sides contract slightly from the side of the original state microstructures 45 as shown. As shown, the burned microstructures 25 maintain their position and their pitch according to the pattern of the backside substrate 21. For PDP display applications, the bismuth material is applied to the microstructure 25 -14- This paper scale applies to the Chinese National Standard (CNS) Α 4 specification (210X 297 mm)

訂Order

k 1260312 A7 ^________B7 五、發明説明（12 ) 一 --— ^通道^然後可將具有經燃燒微結構巧之背側基材21裝 &至顯tf H組合中。此可包括將具有維持電極Η之前側基材51與具有背側電極23、微結構25、及燐光質之背側基材 21對準，以致維持電極53與背側電極23垂直，如圖1所示。相對電極相交通過的區域界定顯示器之像元。然後當將基材黏合在一起並於其之邊緣密封時，將基材之間的空間抽真空，並填充惰性氣體。微結構25之地面部分34的厚度侧面，包括介電質厚度，可為電漿顯不器面板的一重要態樣。地面部分34之厚度會 p響電漿顯不器面板的電性能。可將微結構25模塑，或以其他方式成形，以產生地面部分34之厚度側面。可將厚度側面設計成提供在地面部分34之寬度上為定值的厚度。在其他情況中，可將地面部分34之厚度側面設計成提供可在地面部分34之寬度上變化的厚度。可變化的厚度側面可與 PDP的其他態樣，例如，背侧電極23之設置及尺寸或障壁部分32之構造相容。然而，在加工過程中，微結構託之材料會發生對PDP之電性能具有不利影響的改變。在個別地面部分34之間的實質差異，例如，地面部分34 之不同厚度或不同厚度側面，會導致不期望的光發射圖案 (例如，燐光質之不均等的發射）。此可為，例如，個別像元在電漿顯示器面板之操作過程中因在個別地面部分之間之實質差異所致之交換電壓之實質差異的結果。此等不期望的光發射圖案可由像元對像元亮度之變化或點亮一些像元的困難所表現。 -15- 本紙張尺度“中國國家標準(CNS) A4規格(21G X 297公爱)k 1260312 A7 ^________B7 V. INSTRUCTION DESCRIPTION (12) A --- ^ channel ^ can then be mounted with a burnt microstructure of the back side substrate 21 & to the tf H combination. This may include aligning the front side substrate 51 having the sustain electrode 与 with the back side substrate 21 having the back side electrode 23, the microstructure 25, and the phosphor, such that the sustain electrode 53 and the back side electrode 23 are perpendicular, as shown in FIG. Shown. The area through which the opposing electrodes intersect defines the pixels of the display. Then, when the substrates are bonded together and sealed at the edges thereof, the space between the substrates is evacuated and filled with an inert gas. The thickness side of the ground portion 34 of the microstructure 25, including the dielectric thickness, can be an important aspect of the plasma display panel. The thickness of the ground portion 34 will be the electrical performance of the panel of the plasma display panel. The microstructures 25 can be molded or otherwise shaped to create a thickness side of the floor portion 34. The thickness side can be designed to provide a constant thickness over the width of the floor portion 34. In other cases, the thickness side of the floor portion 34 can be designed to provide a thickness that can vary across the width of the floor portion 34. The variable thickness side can be compatible with other aspects of the PDP, such as the placement and size of the backside electrode 23 or the configuration of the barrier portion 32. However, during processing, the microstructured material can undergo changes that adversely affect the electrical performance of the PDP. Substantial differences between the individual ground portions 34, e.g., different thicknesses or sides of different thicknesses of the ground portion 34, can result in undesirable light emission patterns (e.g., unequal emission of enamel). This may be, for example, the result of a substantial difference in the exchange voltage of individual cells during operation of the plasma display panel due to substantial differences between individual ground portions. Such undesired light emission patterns can be manifested by the difficulty of the pixel to change the brightness of the pixels or to illuminate some of the pixels. -15- The paper size "China National Standard (CNS) A4 specification (21G X 297 public)

1260312 A7 B7 五、發明説明（131260312 A7 B7 V. Description of invention (13

電性能亦會因於製造步驟後（諸如固化或熱加工步驟）引入至微結構25中之瑕疵而受損。微結構25會因諸如，比方說’破裂、裂開、斷裂、不均等收縮、***、及膨脹之瑕疮而受損。如圖4所說明，微結構25中之破裂33或其他瑕疵會使背側電極2 3、背侧基材21、或兩者之部分暴露。此等瑕疵亦會經由在電漿顯示器面板之操作過程中於交換電壓產生實質的差異，而造成電漿顯示器之不期望的電性能。此外’破裂會捕捉氣體物種，其在操作過程中會隨時間經過而擴散至相鄰的晶格内。此會使電漿顯示器面板在使用過程中之性能退化，及最終會縮短其之壽命。訂Electrical properties can also be compromised by the introduction of defects into the microstructures 25 after the manufacturing steps, such as curing or thermal processing steps. The microstructures 25 are damaged by, for example, ruptures, ruptures, breaks, unequal contractions, divisions, and swelling of the sores. As illustrated in Figure 4, the ruptures 33 or other imperfections in the microstructures 25 expose portions of the backside electrode 23, the backside substrate 21, or both. Such defects can also cause undesirable electrical performance of the plasma display by creating substantial differences in the exchange voltage during operation of the plasma display panel. In addition, the 'fracture captures gas species that will diffuse into adjacent lattices over time during operation. This degrades the performance of the plasma display panel during use and ultimately shortens its life. Order

線除了需要較少步驟於成形之外，經模塑成具有均句地面部分34及障壁部分32之微結構可具有期望的物性。地面部分34之存在可使模塑微結構25具有整體的結構安定性。然而，在脫黏及燒結過程中引入於地面部分34中或其附近之破裂會潛在地對障壁部分32之附著至背侧基材21產生危害。在燃燒過程中當微結構25密實化時會發生收縮。圖4說明於燃燒後在背側基材21上之微結構25的橫向橫剖面圖，及圖5說明於燃燒後在背側基材21上之微結構25之末端的橫向橫剖面圖。燃燒使微結構2 5密實化，以致其之侧面如圖所示自其之原始狀態側面45務微收縮。如圖所示，大部分的經燃燒微結構25大致維持其之根據原始狀態微結構45之形狀的相對形狀。圖4亦說明經燃燒微結構25大致維持其之相對於背侧基材21及於背側基材21上圖案化之背側電極23 -16- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1260312 A7 _________ B7 五、發明説明（Μ ) 的位置及節距。然而，微結構25於燃燒過程中之收縮會造成經燃燒材料中的增加應力。此應力於燃燒或冷卻過程中釋放’且會於微結構25中產生裂紋或破裂。破裂33至少部分可歸因於在熱加工前之原始狀態微結構 45的形狀。經模塑形成與圖4所說明者類似形狀之原始狀態微結構45於燃燒之後尤其可能產生破裂33。當原始狀態微結構45之橫向橫剖面側面包含靠近地面部分34的表面不連續43時尤係如此。如圖4所說明，微結構25包括具有表面61 之通道16’表面61包括障壁表面52及地面表面54 ^表面不連續43係表面61之兩部分相會的點（如圖4所說明，其係障壁表面52與地面表面54相會之點），且其有斜率的實質不連續’例如，障壁表面52之斜率相對於地面表面54之斜率的實質不連續。圖6顯示另一例子，其說明具有曲線部分36之微結構25 。在此例子中，當地面表面54之斜率實質上不同於在點43 之曲面56之斜率時，在曲面56與地面表面54之間的表面61 上會存在於該點43處的表面不連續。可將表面不連續視為表面61之平滑的斷裂。表面不連續亦可存在於，例如，曲面56與障壁表面52相會之點，然而，在鄰近地面部分34之表面不連續處或其附近典型上會發生破裂。如圖14所說明，如當自一方向接近時於該點43之斜率ι〇2 與當由相反方向接近時於該點43之斜率104之間有實質的差異，則將表面61視為於點43不連續。換言之，如圖14所說明，如經由自沿表面61之兩方向接近點所得之瞬間線性 -17- 1260312 A7 — __ ________________ Β7 五、發明説明ΰ ~一· 斜率102、104當線性延伸時之角度ι〇6差不多於約5度，及以不多於約3度較佳時，則此處所使用之表面61在點1〇〇為連續。關於微結構困難的另一來源，在微結構之燃燒過程中發生的收縮會影響障壁部分之末端。如圖5所說明，橫向橫剖面顯不於熱加工後出現於微結構25之障壁部分末端29的變形（例如，變形37)。燃燒使微結構25密實化，以致其之側面如圖所不自其之原始狀態側面45收縮。在至少一些情況中’此收縮於燃燒後係自3〇%至4〇%。如圖所不，在障壁部分32之大部分長度上之障壁部分的頂部48維持相當平坦的表面。然而，障壁部分末端29一般不會與其餘的障壁部分32均句地收縮，且典型上會發生障壁部分末端29的輕微捲曲，而產生變形37。此變形37會於電漿顯不器面板或其他裝置之組合及功能中產生多種問題。首先，在顯示器之密封及操縱中，機械力會使變形37斷裂。斷裂的末端片會對PDP的功能及壽命有害。其次，如變 f 37於顯示器中保持完整，則變形37將提供使前側基材51 提升的區域。前側基材51將不會沿障壁部分32之長度與障壁部分之頂部48齊平，且會於障壁部分之頂部48與前側基材51之表面之間產生間隙。此會導致於相鄰晶格中之激發亂體物種之間的串音以及在操作過程中於交換電壓中之大的差異。已發展出加入新穎形狀的微結構。若須要，可使用本發月於克服材料之熱加工所面臨之一或多種問題，例如，該 -18 - 本紙張尺度適财國國家鮮(CNS) A4規格(21GX挪公董) ---------— 1260312 A7 I---—-----—__^____ 五、發明説明（16 ) 材料之破裂及變形。此尤其可有用於製備包括地面部分及障壁部分之微結構。在一具體實施例中，將微結構設置為具有與地面部分之地面表面連續之曲線部分的曲面。在另一具體實施例中，將微結構設置為具有薄障壁寬度側面。在此等具體實施例中，微結構之形狀或尺寸典型上提供增加的耐破裂性。在本發明之另一具體實施例中，微結構包括具有成形末端，尤其係階梯形末端的障壁部分。在又另一具體實施例中，提供一種經由將障壁部分之末端加重而將微結構之障壁末端成形的方法。此外，可將微結構模塑及成形之技術亦係本發明之具體實施例。微結構25之形狀係利用經大致製造成為形成於背侧基材 21上之原始狀態微結構之相反影像的圖案化模型3 0形成。微結構25大致係經由將材料置於背側基材21與模型之圖案化表面之間而形成。在一具體實施例中，如圖6所說明，圖案化模型30將材料成形成複數個重複的微結構單元15, 各重複的微結構單元15具有三主要部分：障壁部分32、地面部分34、及曲線部分36。重複的微結構單元15於材料中形成複數個通道16,通道16具有表面61，其之一部分為彎曲’且係由障壁部分32、地面部分24、及曲線部分36之形狀所界定。通道16之表面61可包括相對於各別部分之表面的障壁表面52、地面表面54、及曲面56。若須要，可將微結構25成形，以降低如圖4所說明，將會於靠近障壁部分32與地面部分34相會之微結構25之區域產 I 生破裂⑽的機率。在一具體實施例中，其之一例子說明於 -19· 本紙張尺度適用中S國家標準(CNS) A4規格(21GX297公爱） '一 1260312 A7 ---— _B7 五、發明説明（17 ) 圖6,提供自曲線部分36至地面部分24之實質上連續的表面 61°此處所論述之本發明說明包括具有與地面表面54連續之曲面56之曲線部分36之微結構25，及製造微結構25的技術。以下說明描述微結構25之整體形狀，包括表面61之參數的例子。對於典型的電漿顯示器面板（圖丨），圖案化模型3〇可於背侧基材21之表面上形成1〇〇〇至5〇〇〇個以上的重複微結構單元15。背側基材21之表面典型上經平行的編址電極23圖案化’及當形成微結構25時，使微結構25與背側電極23對準。典型上’地面部分34係與背侧電極23對準。障壁部分32形成實質容納電漿顯示器面板之惰性氣體的障壁結構。雖然障壁部分32之材料在物理上係與地面部分 34及曲線部分36之材料連續，但可經由界定障壁部分μ之人工邊界而方便地說明本發明的細節。障壁部分32之各側以障壁線42為界。障壁線42自障壁部分頂部48延伸至在微結構/基材界面41上之點。障壁線42係順著靠近障壁部分頂部48之障壁部分32之垂直表面的斜率。由障壁線42及微結構/基材界面41形成障壁線角49。障壁線角49一般係在130。至90。之範圍内，典型上係在丨丨5。至9〇。之範圍内，且可在95。至90°之範圍内。電漿顯示器面板之一例子包括具有在8〇至2〇〇微米之範圍内或在100至170微米之範圍内之自微結構/基材界面ο 測量至障壁部分頂部48之高度（hBP)的障壁部分32。在障壁部分頂部48，障壁部分32之寬度典型上係，例如，在2〇至 -20- 本紙張尺度適用中國國家標準…^^) A4規格(210X297公釐) 1260312 A7 B7 五、發明説明（18 80微米之範圍内。在微結構/基材界面41，障壁部分32之寬度典型上係，例如，在20至120微米之範圍内。在一些情況中，地面部分34可形成包圍在背侧基材21之表面上之背側電極23之頂部及側面的介電層。舉例來說，當將背側電極23形成於背側基材21之表面上（例如，在微結構/基材界面41上方）時，微結構25之材料係與背侧電極23 之頂部及側面接觸。在其他情況中，可將背侧電極23形成於背側基材21中，以致微結構25之材料僅與背側電極23之頂部接觸，或完全不與背侧電極23接觸。地面部分34之材料係與障壁部分32及曲線部分36之材料相連。地面部分34之各侧係以相鄰障壁部分32之障壁線42 為界；因此，障壁線42可界定地面部分34之寬度。地面部分34之底部係以微結構/基材界面41為界，及地面部分％之頂部係以地面線4 4 (其係沿地面表面5 4延伸的水平線）為界。當表面61自地面部分34彎開時，地面線44偏離地面表面54 〇在電漿顯示器面板之一例子中，地面部分具有在8至25 微米範圍内之自微結構/基材界面41測量至地面表面μ之厚度。以在相鄰障壁部分3 2之障壁線4 2之間的距離測量，地面部分之寬度，例如，係在1〇〇至4〇〇微米之範圍内。由於地面部分3 4之一部分的材料形成在背側電極2 3上方的介電層，因而在一些情況中，希望使此層之厚度於背側電極 23之至少一部分的寬度上方維持定值。舉例來說，厚度係固定超過電極之至少75%、85%、95%、或以於1〇〇%較佳。 -21 - 1260312 A7 B7 五、發明説明（19 在本發明之一具體實施例中，如圖6所說明，表面61係自曲面56至地面表面54實質上為連續。表面61視需要可包括在曲面56與障壁表面52之間的表面不連續。因此，曲面56 可不與障壁表面52連續。可經由將曲面56定義為起自障壁表面52及終止於地面表面54，而方便地說明此具體實施例之細節。在一具體實施例中，曲面56以起自於較障壁部分頂部48更靠近微結構/基材界面41之障壁線42較佳。曲面56 以終止於較背側電極23更靠近障壁線42之地面線44較佳。在另一具體實施例中，如圖7所示，表面61可於障壁表面 52與地面表面54之間實質上為連續。沿表面61之連續性並未於通道16内提供表面不連續。在一具體實施例中，曲面 56以起自於較障壁部分頂部48更靠近微結構/基材界面“ 之障壁線42較佳。在一具體實施例中，曲面56以終止於較背側電極23更靠近障壁線42之在地面線44上之點較佳。在本發明之另一具體實施例中，如圖8所說明，曲面56 係起自於障壁頂部角落63及水平終止於地面表面54 ^由於曲面56係起自於障壁頂部角落63，因而障壁部分32之側面一般具有曲率。在一具體實施例中，曲面56以終止於較背側電極23更靠近障壁線42之侧面之在地面線44上之點較佳。在一些情況中，可有用地以曲率半徑R定義表面“或曲面 56。曲率半徑R及曲率κ係彼此成反比，且可以下式表示： R= 1 /κ s曲率半径R增加時，曲率κ減小。曲面之曲率半徑r可相對Lines In addition to requiring fewer steps for forming, the microstructures molded into the uniform ground portion 34 and the barrier portion 32 may have desirable physical properties. The presence of the floor portion 34 allows the molded microstructure 25 to have an overall structural stability. However, the rupture introduced into or near the ground portion 34 during debonding and sintering can potentially be detrimental to the adhesion of the barrier portion 32 to the backside substrate 21. Shrinkage occurs when the microstructures 25 are densified during combustion. Figure 4 illustrates a transverse cross-sectional view of the microstructures 25 on the backside substrate 21 after combustion, and Figure 5 illustrates a transverse cross-sectional view of the ends of the microstructures 25 on the backside substrate 21 after combustion. The combustion densifies the microstructures 25 such that their sides are slightly contracted from their original side 45 as shown. As shown, most of the burned microstructures 25 substantially maintain their relative shape according to the shape of the original state microstructures 45. Figure 4 also illustrates the backside electrode 23 -16 which is substantially maintained by the combustion microstructure 25 relative to the backside substrate 21 and the backside substrate 21. This paper size applies to the Chinese National Standard (CNS) A4 specification. (210X 297 mm) 1260312 A7 _________ B7 V. Location and pitch of the invention description (Μ). However, shrinkage of the microstructures 25 during combustion can result in increased stress in the burned material. This stress is released during combustion or cooling and can cause cracks or cracks in the microstructures 25. The rupture 33 is at least partially attributable to the shape of the original state microstructure 45 prior to thermal processing. The original state in which the shape is formed in a shape similar to that illustrated in Fig. 4 is particularly likely to cause cracks 33 after combustion. This is especially true when the lateral cross-section side of the original state microstructure 45 contains a surface 43 that is adjacent to the ground portion 34. As illustrated in Figure 4, the microstructures 25 include a channel 16' having a surface 61 that includes a barrier surface 52 and a surface of the ground surface 54 that meets two portions of the discontinuous 43-series surface 61 (as illustrated in Figure 4, The point at which the barrier surface 52 meets the ground surface 54) and has a substantial discontinuity in slope 'eg, the slope of the barrier surface 52 is substantially discontinuous with respect to the slope of the ground surface 54. Figure 6 shows another example illustrating a microstructure 25 having a curved portion 36. In this example, the slope of the local face surface 54 is substantially different from the slope of the curved surface 56 at point 43, the surface discontinuity at the point 43 on the surface 61 between the curved surface 56 and the ground surface 54. The surface discontinuity can be considered as a smooth break of the surface 61. Surface discontinuities may also exist, for example, at the point where the curved surface 56 meets the barrier surface 52, however, cracking typically occurs at or near the surface discontinuities adjacent the ground portion 34. As illustrated in Figure 14, the surface 61 is considered to be a substantial difference between the slope ι2 at that point 43 when approaching from a direction and the slope 104 at that point 43 when approaching from the opposite direction. Point 43 is not continuous. In other words, as illustrated in Fig. 14, the instantaneous linearity obtained by approaching the point from the two directions of the surface 61 is -17-1260312 A7 — __ ________________ Β 7 V. Description of the invention 一 ~1 The angle of the slopes 102, 104 when extending linearly When ι〇6 is about 5 degrees, and preferably no more than about 3 degrees, the surface 61 used here is continuous at point 1〇〇. Another source of difficulty with microstructures, the shrinkage that occurs during the combustion of the microstructure affects the ends of the barrier portion. As illustrated in Figure 5, the transverse cross-section does not appear to be deformed (e.g., deformed 37) at the end 29 of the barrier portion of the microstructure 25 after thermal processing. The combustion densifies the microstructures 25 such that their sides contract as they are from the original side 45. In at least some instances, this shrinkage is from 3% to 4% after combustion. As shown, the top portion 48 of the barrier portion over most of the length of the barrier portion 32 maintains a relatively flat surface. However, the barrier portion end 29 generally does not contract uniformly with the remaining barrier portion 32, and typically a slight curling of the barrier portion end 29 occurs, resulting in a deformation 37. This deformation 37 can cause a variety of problems in the combination and function of the plasma display panel or other devices. First, mechanical forces can break the deformation 37 during sealing and handling of the display. The broken end piece is detrimental to the function and life of the PDP. Second, if the variable f 37 remains intact in the display, the deformation 37 will provide an area for lifting the front side substrate 51. The front side substrate 51 will not be flush with the top portion 48 of the barrier portion along the length of the barrier portion 32, and will create a gap between the top portion 48 of the barrier portion and the surface of the front side substrate 51. This can result in crosstalk between excited chaotic species in adjacent crystal lattices and large differences in exchange voltage during operation. Microstructures incorporating novel shapes have been developed. If necessary, you can use this month to overcome one or more of the problems of thermal processing of materials. For example, the -18 - paper size is suitable for the national fresh (CNS) A4 specification (21GX Novo Dong) --- ------— 1260312 A7 I----------__^____ V. Description of invention (16) Cracking and deformation of materials. This may especially be used to prepare microstructures including the ground portion and the barrier portion. In a specific embodiment, the microstructure is set to have a curved surface that is continuous with the curved portion of the ground surface of the ground portion. In another embodiment, the microstructure is configured to have a thin barrier width side. In these particular embodiments, the shape or size of the microstructure typically provides increased resistance to cracking. In another embodiment of the invention, the microstructure comprises a barrier portion having a shaped end, particularly a stepped end. In still another embodiment, a method of forming a barrier end of a microstructure by weighting a distal end of the barrier portion is provided. Moreover, the techniques of molding and forming microstructures are also embodiments of the invention. The shape of the microstructures 25 is formed by a patterned pattern 30 that is substantially fabricated as an opposite image of the original state microstructure formed on the backside substrate 21. The microstructures 25 are generally formed by placing a material between the backside substrate 21 and the patterned surface of the mold. In a specific embodiment, as illustrated in FIG. 6, the patterned model 30 is formed into a plurality of repeating microstructure units 15, each repeating microstructure unit 15 having three major portions: a barrier portion 32, a ground portion 34, And curve portion 36. The repeating microstructure unit 15 forms a plurality of channels 16 in the material, the channel 16 having a surface 61, one of which is curved' and defined by the shape of the barrier portion 32, the ground portion 24, and the curved portion 36. The surface 61 of the channel 16 can include a barrier surface 52, a ground surface 54, and a curved surface 56 relative to the surface of the respective portion. If desired, the microstructures 25 can be shaped to reduce the probability of rupture (10) in the region of the microstructures 25 adjacent the barrier portion 32 and the ground portion 34 as illustrated in FIG. In one embodiment, an example of this is illustrated in -19. This paper scale applies to the S National Standard (CNS) A4 specification (21GX297 public) '1260312 A7 --- _B7 V. Invention Description (17) 6, a substantially continuous surface 61 from the curved portion 36 to the ground portion 24 is provided. The invention described herein includes a microstructure 25 having a curved portion 36 having a curved surface 56 that is continuous with the ground surface 54, and fabricating the microstructure. 25 technology. The following description describes the overall shape of the microstructures 25, including examples of the parameters of the surface 61. For a typical plasma display panel (Fig. ,), the patterned model 3 can form from 1 to 5 or more repeating microstructure units 15 on the surface of the back substrate 21. The surface of the backside substrate 21 is typically patterned by parallel addressing electrodes 23 and when microstructures 25 are formed, the microstructures 25 are aligned with the backside electrodes 23. Typically, the ground portion 34 is aligned with the backside electrode 23. The barrier portion 32 forms a barrier structure that substantially contains the inert gas of the plasma display panel. Although the material of the barrier portion 32 is physically continuous with the material of the ground portion 34 and the curved portion 36, the details of the present invention can be conveniently illustrated by the artificial boundary defining the barrier portion μ. Each side of the barrier portion 32 is bounded by a barrier line 42. The barrier line 42 extends from the top 48 of the barrier portion to a point on the microstructure/substrate interface 41. The barrier line 42 follows the slope of the vertical surface of the barrier portion 32 near the top 48 of the barrier portion. The barrier line angle 49 is formed by the barrier line 42 and the microstructure/substrate interface 41. The barrier line angle 49 is generally at 130. To 90. Within the scope, it is typically at 丨丨5. To 9 〇. Within the range, and can be at 95. Up to 90°. An example of a plasma display panel includes a self-microstructure/substrate interface having a height in the range of 8 Å to 2 μm or in the range of 100 to 170 μm ο measured to the height 48 (hBP) of the barrier portion top 48 Barrier portion 32. At the top 48 of the barrier portion, the width of the barrier portion 32 is typically, for example, from 2 〇 to -20 - the paper size applies to the Chinese national standard...^^) A4 size (210X297 mm) 1260312 A7 B7 V. Description of invention ( In the range of 18 80 microns. At the microstructure/substrate interface 41, the width of the barrier portion 32 is typically, for example, in the range of 20 to 120 microns. In some cases, the ground portion 34 may be formed to surround the back side. a dielectric layer on the top and side of the backside electrode 23 on the surface of the substrate 21. For example, when the backside electrode 23 is formed on the surface of the backside substrate 21 (for example, at the microstructure/substrate interface) When 41 is above, the material of the microstructure 25 is in contact with the top and sides of the backside electrode 23. In other cases, the backside electrode 23 may be formed in the backside substrate 21 such that the material of the microstructure 25 is only The top of the backside electrode 23 is in contact or not in contact with the backside electrode 23. The material of the ground portion 34 is connected to the material of the barrier portion 32 and the curved portion 36. The sides of the ground portion 34 are adjacent to the barrier portion 32. The barrier line 42 is bounded; therefore, the barrier 42 may define the width of the ground portion 34. The bottom portion of the ground portion 34 is bounded by the microstructure/substrate interface 41, and the top portion of the ground portion is tied to the ground line 4 4 (which is a horizontal line extending along the ground surface 54) When the surface 61 is bent from the ground portion 34, the ground line 44 is offset from the ground surface 54. In one example of a plasma display panel, the ground portion has a self-microstructure/substrate interface in the range of 8 to 25 microns. 41 measures the thickness to the ground surface μ. Measured by the distance between the barrier line 4 2 of the adjacent barrier portion 32, the width of the ground portion, for example, is in the range of 1 〇〇 to 4 〇〇 micron. The material of a portion of the ground portion 344 forms a dielectric layer over the backside electrode 23, and thus in some cases it is desirable to maintain the thickness of this layer above the width of at least a portion of the backside electrode 23. For example, The thickness is fixed at least 75%, 85%, 95%, or preferably 1% by weight of the electrode. -21 - 1260312 A7 B7 5. Description of the Invention (19) In one embodiment of the present invention, As illustrated in Figure 6, the surface 61 is a song 56 to the floor surface 54 is substantially continuous. The surface 61 may include surface discontinuities between the curved surface 56 and the barrier surface 52 as desired. Thus, the curved surface 56 may not be continuous with the barrier surface 52. The curved surface 56 may be defined as The barrier surface 52 terminates in the ground surface 54 to facilitate the description of the details of this embodiment. In one embodiment, the curved surface 56 is spaced closer to the microstructure/substrate interface 41 from the top 48 of the barrier portion. The line 42 is preferred. The curved surface 56 is preferably terminated by a ground line 44 that is closer to the barrier line 42 than the backside electrode 23. In another embodiment, as shown in FIG. 7, surface 61 may be substantially continuous between barrier surface 52 and floor surface 54. The continuity along surface 61 does not provide surface discontinuities within channel 16. In one embodiment, the curved surface 56 is preferably a barrier line 42 that is closer to the microstructure/substrate interface from the top 48 of the barrier portion. In one embodiment, the curved surface 56 terminates at the backside electrode. 23 is closer to the point of the barrier line 42 on the ground line 44. In another embodiment of the invention, as illustrated in Figure 8, the curved surface 56 is from the top corner 63 of the barrier and horizontally terminates at the surface of the floor. 54 ^ Since the curved surface 56 is from the top corner 63 of the barrier, the side of the barrier portion 32 generally has a curvature. In one embodiment, the curved surface 56 terminates at a side closer to the barrier line 42 than the backside electrode 23. The point on the ground line 44 is preferred. In some cases, the surface "or curved surface 56" may be usefully defined by the radius of curvature R. The radius of curvature R and the curvature κ are inversely proportional to each other, and can be expressed by the following equation: R = 1 / κ s When the radius of curvature R increases, the curvature κ decreases. The radius of curvature r of the surface can be relative

裝訂Binding

-22--twenty two-

1260312 A7 _____ B7 I、發明説明（20~~~^ 於微結構25之其他尺寸，例如，障壁部分高度^?、障壁部分寬度wBP、或地面部分厚度hLp作描述。在本發明之一具體實施例中，微結構25之曲面56具有單一的曲率半徑。此表示曲率κ不會在沿曲面56的任何點上改變。曲面56之形狀可與圓弧之形狀相同，其中圓之半徑即等於曲面56之曲率半徑R。曲率半可基於微結構25之其他尺寸作選擇。舉例來說，曲率半徑R可為障壁部分高度hBp 之刀數。在其中之微結構25具有曲面56，且曲面5 6係由單一曲率半徑R所定義之本發明的一有用具體實施例中，曲率半徑R係在障壁部分高度hBP之5%至80%的範圍内，在障壁部分高度hBP之10%至50%的範圍内，或在障壁部分高度hBp之 12%至25%的範圍内。在本發明之另一具體實施例中，曲面56係由多於一個曲率半徑所定義。在此具體實施例之一例子中，如圖6所說明，兩曲率半徑R1及R2分別定義地面表面54與曲面56相會及曲面56與障壁表面52相會處的曲面56。可使用多於兩個曲率半技。在一些具體實施例中，包括多於一個曲率半徑之曲面56實質上為連續（即不包含表面不連續）。舉例來說，曲面對曲面56上之個別點包括在ri及R2之值之間的曲率半徑。沿曲面上之點之曲率半徑的改變係依循曲面56之函數。應明瞭可將曲率半徑之變化與如關於描繪於圖6、7、及8 之任何具體實施例所說明之微結構25之曲面56的任何形狀結合使用。本發明之另一態樣係關於經由修改微結構25之尺寸而降 -23- 本紙張尺度適财國时標準(CNS) A4規格(21Gχ 297公爱) 1260312 A7 B7 五、發明説明（21 低或防止破裂。經發現降低障壁部分之寬度亦可降低或防止當將微結構材料脫黏及燒結時所發生之應力相關破裂。因此，在另一具體實施例中，如圖9所說明，本發明包括含具有降低障壁部分寬度…？之障壁部分32的微結構25。在此具體實施例中’於微結構/基材界面41處測得之障壁部分寬度wBP係在25-75微米之範圍内較佳，在50-75微米 <範圍内更佳’及在65-75微米之範圍内最佳。障壁部分高度j^p典型上係在100-170微米之範圍内。一般而言，可使用說明於此之方法及結構於形成具有降低破裂之微結構的物件及裝置。舉例來說，可形成具有於基材上之微結構的物件及裝置，其中至少99%之微結構，及以100%之微結構較佳，不具有深度等於在微結構/基材界面 41與地面線44之間測得之地面厚度之25%以上的裂紋。於脫黏及燒結之後，典型上希望障壁部分之頂部48為平坦，且實質上沒有物理不規則。此平坦度可促進相面對之玻璃基材51與障壁部分之頂部48沿其之全體長度的接觸。此完全接觸亦可「密封」由障壁部分32形成之通道16，及防止或實質上阻止相鄰通道16中之氣體種類經由在障壁部分之頂部與相面對之玻璃基材51之間之間隙逸出。在脫黏及燒結過程中，微結構25之障壁部分32的末端經歷收縮，並受到不均等的應力釋放。如圖5所說明，橫向橫剖面顯示微結構25之障壁部分32之末端於脫黏及燒結後之變形。燃燒使微結構25密實化，以致其之侧面如圖所示自其之原始狀態側面4 5收縮。如圖所示，在障壁部分末端2 9 * 24 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 12603121260312 A7 _____ B7 I. Description of the invention (20~~~^) The other dimensions of the microstructure 25, for example, the height of the barrier portion, the width of the barrier portion wBP, or the thickness of the ground portion hLp are described. In the example, the curved surface 56 of the microstructure 25 has a single radius of curvature. This means that the curvature κ does not change at any point along the curved surface 56. The shape of the curved surface 56 can be the same as the shape of the circular arc, wherein the radius of the circle is equal to the surface. The radius of curvature R of 56. The curvature half can be selected based on other dimensions of the microstructure 25. For example, the radius of curvature R can be the number of knives of the height of the barrier portion hBp, wherein the microstructure 25 has a curved surface 56, and the curved surface 56 In a useful embodiment of the invention defined by a single radius of curvature R, the radius of curvature R is in the range of 5% to 80% of the height hBP of the barrier portion, and 10% to 50% of the height hBP of the barrier portion. In the range, or in the range of 12% to 25% of the height hBp of the barrier portion. In another embodiment of the invention, the curved surface 56 is defined by more than one radius of curvature. An example of this embodiment In, as shown in Figure 6. It is noted that the two radii of curvature R1 and R2 respectively define a curved surface 56 where the ground surface 54 meets the curved surface 56 and the curved surface 56 meets the barrier surface 52. More than two curvature halves may be used. In some embodiments, The curved surface 56 of more than one radius of curvature is substantially continuous (ie, does not include surface discontinuities). For example, the individual points on the curved surface 56 include a radius of curvature between the values of ri and R2. The change in the radius of curvature of the point is a function of the curved surface 56. It should be understood that any change in radius of curvature may be associated with any of the curved surfaces 56 of the microstructures 25 as described with respect to any of the embodiments depicted in Figures 6, 7, and 8. The shape is used in combination. Another aspect of the invention relates to the reduction of the size of the microstructure 25 by modifying the size of the microstructure 25 (CNS) A4 specification (21Gχ 297 public) 1260312 A7 B7 V. Invention Description (21 low or prevent cracking. It has been found that reducing the width of the barrier portion can also reduce or prevent stress-related cracking that occurs when the microstructured material is debonded and sintered. Thus, in another embodiment, Figure 9 Illustrated, the present invention includes a microstructure 25 comprising a barrier portion 32 having a reduced barrier portion width. In this embodiment, the barrier portion width wBP measured at the microstructure/substrate interface 41 is at 25- Preferably, it is in the range of 75 microns, more preferably in the range of 50-75 microns < and preferably in the range of 65-75 microns. The barrier portion height j^p is typically in the range of 100-170 microns. In general, the methods and structures described herein can be used to form articles and devices having microstructures that reduce cracking. For example, articles and devices having microstructures on a substrate can be formed, at least 99% of which The microstructure, and preferably 100% microstructure, does not have a crack equal to more than 25% of the ground thickness measured between the microstructure/substrate interface 41 and the ground line 44. After debonding and sintering, it is typically desirable that the top portion 48 of the barrier portion be flat and substantially free of physical irregularities. This flatness promotes contact of the facing glass substrate 51 with the top portion 48 of the barrier portion along its entire length. This full contact can also "seal" the passage 16 formed by the barrier portion 32 and prevent or substantially prevent the gas species in the adjacent passage 16 from passing between the top of the barrier portion and the facing glass substrate 51. Escape. During the debonding and sintering process, the end of the barrier portion 32 of the microstructure 25 undergoes contraction and is subjected to unequal stress relief. As illustrated in Fig. 5, the transverse cross section shows the deformation of the end of the barrier portion 32 of the microstructure 25 after debonding and sintering. Combustion densifies the microstructures 25 such that their sides contract from their original side 45 as shown. As shown in the figure, at the end of the barrier part 2 9 * 24 - This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1260312

= 部分32之大部分長度上之障壁部分的頂部 48維持根據原始狀態微結構45之形狀的平坦表面。然而，障壁部分末端29並未與其餘的障壁部分以均勾地收縮且發生障土邛刀末端29之輕微捲曲，而產生變形37。變形37 之存在會於罪近障壁部分末端29之障壁部分的頂部仏產生 -提升區域。變形37會於電聚顯示器面板之組合及功能中產生夕種問題。首先，在顯示器之㈣及操縱中，機械力會使變形37斷裂。斷裂的障壁末端片會對pDp的功能及壽命有害。其次，如先前所指示，變形37會阻止相面對之玻璃基材51與障壁部分之頂部48的完全接觸。在缺乏完全接觸時’、在障壁部分之頂部48與前側基材51之表面之間會存在間隙。此會導致於相鄰晶格中之激發氣體物種之間的串音以及在操作過程中於交換電壓中之差異。因此’希望以可防止變形干擾pDp之適當組合或功能的方式將原始狀態微結構45之障壁末端成形。如圖10所說明，本發明之一具體實施例提供經模塑成具有階梯形狀末端47 之原始狀態微結構45，其尤其可克服與當將微結構脫黏及燒結時所發生之變形3 7相關的問題。如圖10所說明，障壁部分之階梯形狀末端47具有第一階梯58、第二階梯68、及第三階梯78。階梯形狀末端47具有至少兩階梯較佳。階梯形狀末端47之各階梯具有階梯高度 hS、階梯寬度…、及階梯角67。階梯形狀末端47之各階梯分別可具有不同的階梯高度hS、不同的階梯寬度wS、及不同的階梯角67。各階梯之階梯高度hS係至少20微米較佳， -25- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公釐) 1260312 A7 __B7 五、發明説明（23~" ~ " 及階梯寬度wS係等於或大於階梯高度hS較佳。階梯角一般係在90至175°之範圍内，典型上係在90至145°之範圍内，且可在90至125°或90至110°之範圍内。微結構25於燃燒後之形狀可模仿原始狀態微結構45於障壁部分32之整個橫向橫剖面侧面上之形狀，包括階梯形狀末端47。在階梯形狀末端 47上，通常在鄰接於背側基材21之階梯上之位置，例如在第三階梯78上，階梯形狀末端47可顯現於脫黏及燒結之後出現的變形37。然而，在階梯形狀末端47中，此變形37不太可能不利於PDP之組合或功能。在此具體實施例之另一變形中，如圖11所說明，鄰接於背側基材21之階梯’例如第三階梯78，經延長。鄰接於背側基材21之階梯，例如第三階梯78之階梯高度hS對階梯寬度wS之比（hS:wS)係在1:1至1:1〇之範圍内較佳，在1:1 5 至1:8之範圍内更佳，及在1:2至1:6之範圍内最佳。在本發明之另一具體實施例中，如圖12所說明，障壁部分32之末端47自障壁部分頂部48至背侧基材21表面成錐形。障壁部分32之錐形末端47可為各種形狀或形體，且提供當經熱加工時在結構上穩定，且不會形成提升高出障壁部分頂部48之實質變形的原始結構形狀47。原始狀態錐形末端47之錐形末端角度57係不多於60。及不低於15。較佳。如圖12所說明，原始結構狀態中之障壁部分32之錐形末端47的適當形狀包括自原始狀態微結構45之頂部延伸至背側基材21之表面的直線。於熱加工後，微結構自其之原始狀態形狀45收縮至經加工狀態25。然而，由於錐形末端 -26- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 1260312 A7 ----- -B7 五、發明説明（24 ) ，任何在熱加工過程中所發生之在障壁部分犯之末端的形狀變化並不會實質上地影響障壁部分頂部48之平坦度或壁部分之末端的完整性。另一具體實施例係防止或降低障壁部分犯之末端在微結構25之脫黏及燒結過程中捲曲之可能性或量之方法。如圖 13所示，將重物19放置成與障壁部分之頂部角落口接觸。典型上，重物將與障壁部分之至少一頂部角落77接觸。可沿存在障壁末端之組合的各邊緣存在多個重物：在一較佳具體實施例中，沿存在障壁末端之各組合邊緣放置重物，且重物與障壁部分之大部分或全部的頂部角落接觸。由障壁部分之頂部角落77上之重物所施加之壓力係足以防止在脫黏及燒結過程中產生變形37(例如，如圖5所見）較佳。在脫黏及燒結過程中由重物所施加之壓力會產生有角度的障壁末端角落87。壓力不應過大，以致將障壁部分 32之末端壓平至背側基材21之表面。典型上，足夠的壓力係在每個障壁末端〇.0〇〇1至〇〇〇2牛頓（趵之範圍内較佳，在每個障壁末端0.0001至0.001牛頓之範圍内更佳，及在每個障壁末端0.0002至0.0005牛頓之範圍内最佳。重物19可為各種形狀，例如，矩形、三角形、梯形、或長菱形。重物1 9之底部75為平坦較佳，然而，亦可使用稍微彎曲或有角度的底部75’其限制條件為重物19之重物底部75與障壁部分之頂部角落77明顯地接觸。在一具體實施例中，如圖13所說明，在障壁部分之頂部角落77與重物底部75上之點之間進行接觸，且亦於背侧基 -27- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1260312= The top portion 48 of the barrier portion over most of the length of portion 32 maintains a flat surface that is shaped according to the original state microstructure 45. However, the barrier portion end 29 does not contract uniformly with the remaining barrier portions and a slight curl of the barrier trowel end 29 occurs, resulting in deformation 37. The presence of the deformation 37 will result in a raised area at the top of the barrier portion of the end portion 29 of the near barrier portion. Deformation 37 can cause problems in the combination and function of the electro-convergence display panel. First, in the (4) and manipulation of the display, the mechanical force causes the deformation 37 to break. A broken barrier end piece is detrimental to the function and lifespan of pDp. Second, as indicated previously, the deformation 37 prevents complete contact of the facing glass substrate 51 with the top portion 48 of the barrier portion. In the absence of full contact, there may be a gap between the top 48 of the barrier portion and the surface of the front substrate 51. This can result in crosstalk between the excited gas species in adjacent lattices and differences in the exchange voltage during operation. Therefore, it is desirable to shape the barrier ends of the original state microstructures 45 in a manner that prevents deformation from interfering with the proper combination or function of pDp. As illustrated in Figure 10, an embodiment of the present invention provides a microstructured microstructure 45 that has been molded into a stepped shape end 47 that overcomes, inter alia, deformations that occur when the microstructure is debonded and sintered. Related issues. As illustrated in Fig. 10, the stepped end 47 of the barrier portion has a first step 58, a second step 68, and a third step 78. The stepped shape end 47 preferably has at least two steps. Each step of the stepped end 47 has a step height hS, a step width..., and a step angle 67. Each of the steps of the stepped end 47 may have a different step height hS, a different step width wS, and a different step angle 67. The step height hS of each step is preferably at least 20 μm, -25- This paper size is applicable to China National Standard (CNS) A4 specification (21〇X 297 mm) 1260312 A7 __B7 V. Invention description (23~" ~ &quot And the step width wS is preferably equal to or greater than the step height hS. The step angle is generally in the range of 90 to 175°, typically in the range of 90 to 145°, and may be in the range of 90 to 125° or 90 to In the range of 110°, the shape of the microstructure 25 after combustion can mimic the shape of the original state microstructure 45 on the entire lateral cross-sectional side of the barrier portion 32, including the stepped shape end 47. On the stepped end 47, typically Adjacent to the position on the step of the backside substrate 21, for example on the third step 78, the stepped end 47 can exhibit a deformation 37 that occurs after debonding and sintering. However, in the stepped end 47, this deformation 37 It is unlikely that the combination or function of the PDP is disadvantageous. In another variation of this embodiment, as illustrated in Figure 11, the step adjacent to the backside substrate 21, such as the third step 78, is elongated. Adjacent to the back The step of the side substrate 21, for example The ratio of the step height hS of the three steps 78 to the step width wS (hS: wS) is preferably in the range of 1:1 to 1:1 ,, more preferably in the range of 1:1 5 to 1:8, and Preferably, in the range of 1:2 to 1:6. In another embodiment of the present invention, as illustrated in Fig. 12, the end 47 of the barrier portion 32 is formed from the top portion 48 of the barrier portion to the surface of the back substrate 21. The tapered end 47 of the barrier portion 32 can be of various shapes or shapes and provides structural stability when thermally processed and does not form an original structural shape 47 that lifts substantial deformation above the top portion 48 of the barrier portion. The tapered end angle 57 of the original state tapered end 47 is not more than 60. and not less than 15. Preferably, as illustrated in Fig. 12, the appropriate shape of the tapered end 47 of the barrier portion 32 in the original structural state includes A line extending from the top of the original state microstructure 45 to the surface of the backside substrate 21. After thermal processing, the microstructure shrinks from its original state shape 45 to the processed state 25. However, due to the tapered end -26- This paper scale applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) 1260312 A7 ----- - B7 V. Inventive Note (24), any change in shape at the end of the barrier portion that occurs during thermal processing does not substantially affect the flatness of the top portion 48 of the barrier portion or the integrity of the end of the wall portion. Another embodiment is a method of preventing or reducing the likelihood or amount of curling of the end portion of the barrier portion during debonding and sintering of the microstructure 25. As shown in Figure 13, the weight 19 is placed with the barrier portion. The top corner port contacts. Typically, the weight will contact at least one top corner 77 of the barrier portion. A plurality of weights may be present along each edge of the combination of the ends of the barrier: in a preferred embodiment, the weight is placed along each of the combined edges of the end of the barrier, and the weight and the top of most or all of the barrier portion Corner contact. The pressure exerted by the weight on the top corner 77 of the barrier portion is sufficient to prevent deformation 37 (e.g., as seen in Figure 5) during debonding and sintering. The pressure exerted by the weight during debonding and sintering produces angled barrier end corners 87. The pressure should not be so large that the end of the barrier portion 32 is flattened to the surface of the backside substrate 21. Typically, sufficient pressure is preferably in the range of 〇.0〇〇1 to 〇〇〇2 Newtons per damper wall, preferably in the range of 0.0001 to 0.001 Newtons per end of the barrier, and in each The barrier ends are preferably in the range of 0.0002 to 0.0005 Newtons. The weights 19 can be of various shapes, for example, rectangular, triangular, trapezoidal, or rhomboid. The bottom 75 of the weights 19 is preferably flat, however, it can also be used. The slightly curved or angled bottom portion 75' is limited in that the weight bottom 75 of the weight 19 is in apparent contact with the top corner 77 of the barrier portion. In one embodiment, as illustrated in Figure 13, at the top corner of the barrier portion 77 is in contact with the point on the bottom 75 of the weight, and also on the back side -27- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1260312

材21之表面上之點在外側底部角落7丨與背側基材2丨之間進行接觸。然而，另一種方式為外側底部角落71可與另一表面例如，未與組合結合之物體的表面接觸。外側底部角落7丨與背側基材21於背側基材21之表面上之點的接觸可產生重物/基材角85。重物/基材角85 一般係在〇· 5至2· 5。之間，典型上係在0·5至Γ之間，且可在〇5至〇8。之間。重物19典型上包含可承受在陶瓷材料之脫黏及燒結過程中所達到之溫度的材料，例如，玻璃或金屬。此等材料在脫黏及燒結過程中不會鍵結至陶瓷材料或與其化學反應較佳。適當材料的例子包括氧化鋁、鹼石灰玻璃、及錯氧。一較佳之材料為锆氧。未上底塗料的鹼石灰玻璃在燒結過程中會輕微黏著至肋條配方。铭氧及錯氧並不會。错氧最不具反應性。當知曉亦可使用具有模塑微結構之基材形成其他物件。舉例來說’可使用模塑微結構於形成供諸如電泳板之應用用的毛細通道。此外，可將模塑微結構使用於電漿或其他產生光的應用。實施例實施例1 -10 使用模型及可光固化之玻璃玻料料漿於基材上形成障壁肋條。製備玻璃玻料料漿。此等實施例中所使用之玻璃玻料料漿配方包括80份重量之RFW030玻璃粉末（Asahi Glass Co·(曰本東京）），其包含具有耐火填料諸如Ti〇2及ai2〇3之硼矽酸鉛玻璃玻料。於玻璃粉末中加入8· 034份重量之購自 -28- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)The point on the surface of the material 21 is in contact between the outer bottom corner 7丨 and the back side substrate 2丨. Alternatively, the outer bottom corner 71 can be in contact with another surface, for example, without the surface of the combined object. Contact of the outer bottom corner 7 丨 with the point of the backside substrate 21 on the surface of the backside substrate 21 produces a weight/substrate angle 85. The weight/substrate angle 85 is generally between 〇·5 and 2.5. Between, typically between 0·5 and Γ, and between 〇5 and 〇8. between. The weight 19 typically comprises a material that can withstand the temperatures reached during the debonding and sintering of the ceramic material, such as glass or metal. These materials do not bond to or react chemically with the ceramic material during debonding and sintering. Examples of suitable materials include alumina, soda lime glass, and mis-oxygen. A preferred material is zirconium oxide. The soda lime glass without the primer is slightly adhered to the rib formulation during the sintering process. Ming oxygen and wrong oxygen will not. The wrong oxygen is the least reactive. It is also known that other articles can be formed using a substrate having a molded microstructure. For example, molded microstructures can be used to form capillary channels for applications such as electrophoretic panels. In addition, molded microstructures can be used in plasma or other light producing applications. EXAMPLES Example 1 - 10 Barrier ribs were formed on a substrate using a mold and a photocurable glass frit slurry. A glass frit slurry was prepared. The glass frit slurry formulation used in these examples comprises 80 parts by weight of RFW030 glass powder (Asahi Glass Co. (曰本东京)) comprising boron bismuth having refractory fillers such as Ti〇2 and ai2〇3. Lead acid glass glass. Adding 034 parts by weight to the glass powder from -28- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

裝Loading

k 1260312 A7 _______ B7 五、發明説明（26 )k 1260312 A7 _______ B7 V. Description of invention (26)

Sartomer Company, Inc· (Exton，PA)之 BisGMA(雙紛-a 二縮水甘油基醚二甲基丙烯酸酯）及4· 326份重量之購自 Kyoeisha Chemical Co·，Ltd·(日本）之 TEGDMA(三乙二醇二甲基丙烯酸酯），而形成可固化易變黏合劑。使用7份重量之 1，3-丁二醇（Aldrich Chemical Co· (Milwaukee，WI)) 作為稀釋劑。此外，加入0.12份重量之購自3M Company (St· Paul，MN)之POCAII (磷酸聚氧烷基多元醇）（可使用購自其他製造商之其他磷酸聚氧烷基多元醇）作為分散劑，加入 0· 16 份重量之 A174 石夕院（Aldrich Chemical Co.(Milwaukee，WI))作為石夕烧偶合劑，及加入0.16份重量之 Irgacur™ 819 (Ciba Specialty Chemicals(Basel， Switzer land))作為固化引發劑。此外，加入0.20份重量之購自 BYK Chemie USA(Wal 1 ingford，CT)之BYK A555作為脫氣劑。將所有的液體成份及光引發劑結合於不銹鋼混合容器中。使用利用氣動馬達驅動之罩式刮板（cowles blade) (VWR Scientific Products(West Chester, PA))將成份換混。邊使混合刮板運轉，邊將固體成份緩慢加入。於所有成份皆加入後，使混合物再多摻混5分鐘。將料漿移至經裝入1 /2 英吋圓柱形高密度氧化鋁研磨介質的高密度聚乙烯容器中。使用塗料調理器（Red Devil 5100型（Union，NJ))進行研磨30分鐘。然後使料漿自球磨機排出。最後，使用三輥磨 (2.5x5 TRM型，Charles Ross & Son Company(Haupauge， NY))在60°C下研磨料漿。 -29- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐) 1260312 A7 _______ B7 五、發明説明（27 ) 使用刮刀塗布機於將料漿塗布於2. 3毫米厚的鹼石灰玻璃基材（Libbey Owen Ford Glass Co. (Charleston，WV)) 上。對於所有的樣品，將刀片間隙設於75微米。於塗布之後，將具有障壁肋條特徵之模型層合於經塗布基材上。層合壓力係標稱〇·68公斤/公分，及層合速度係標稱3公分/秒。所使用之模型係經鑄塑及固化於高挺度背襯材料諸如 125微米厚之ΡΕΤ(Ε· I. Du Pont De Nemours and Company(Wi 1 mington，DE))上之聚碳酸酯或可光固化之丙烯酸酯材料。模型係經由使丙烯酸酯樹脂靠著金屬工具鑄塑及固化而製得。評估具有不同類型之障壁肋條微結構的模型。於模塑之後，使經塗布基材暴露至藍色光源，以使玻璃玻料料漿硬化。使用藍色光源在1 · 5英吋（約3. 8公分）樣品表面進行固化。光源係由10個隔開2英吋（約5· 1公分）之超光化螢光燈（TLDK 30W/03 型，Philips Electronics N.V.(Einhoven，Netherlands))所構成。此等超光化燈提供在約400至500奈米（nm)之波長範圍内之光。固化時間典型上係30秒。將模型移除，及使樣品於空氣中根據以下的熱循環燒結 :3°C/分鐘至300°C，5°C/分鐘至560eC，維持20分鐘，及在2-3°C/分鐘下冷卻至環境溫度。在燒結過程中，障壁肋條被壓迫至硬質玻璃基材。由於此壓迫，當障壁肋條於燒結過程中密實化及收縮時產生平面内應力。再者，由於在障壁肋條與相鄰連續地面區域之 -30- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1260312 A7 B7 五、發明説明（28 間之特徵厚度之間之大的差異，在燒結過程中會產生大的示差應力。因此，在障壁肋條之底部的尖銳角落顯示在燒結過程中有高的龜裂傾向。結果無異於在此區域中作出切面。為減輕此龜裂，自障壁肋條至地面之過渡係以相當平滑的方式完成。就數學上而言，如要使自障壁肋條側壁至地面之過渡呈現為連續線條，則此函數之導數為連續，以避免產生大的應力集中較佳。在實施例4-8及10中，測試具有各種肋條底部曲率半徑之障壁肋條。其皆產生悉裂的游離部分。在實施例3及9之情況中，半徑摻混並非對地面層完全正切，且觀察到裂紋。肋條裂紋係使用光顯微術（透過透射光）（Leitz DMRBE， Leica Mikroskopie & System GmbH(Wetzlar, Germany)) 及掃描電子顯微鏡（AMPAX 1920型（Bedford，MA))評估。所有的裂紋皆係於肋條底部觀察得。下表提供於各實施例中製得之產品的訊息。所有尺寸皆係參照在燒結前之原始狀態。牽引角係指障壁線相對於垂直的角度。實施例肋條節距 (pm) 肋條南度 (μπι) 頂部寬度 (μπι) 牽引角肋條底部曲率半徑摻混之品質裂紋？ 1 360 202 68 8° <0. 1 μιη N/a 是 2 220 185 75 8° 切面 N/a 是 3 360 213 37 8° 50 差是 4 360 213 37 8° 50 良好否 5 286 202 37 8° 25 良好否 -31 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)BisGMA (Shuangdu-a diglycidyl ether dimethacrylate) of Sartomer Company, Inc. (Exton, PA) and 4.326 parts by weight of TEGDMA available from Kyoeisha Chemical Co., Ltd. (Japan) Triethylene glycol dimethacrylate) forms a curable variable binder. 7 parts by weight of 1,3-butanediol (Aldrich Chemical Co. (Milwaukee, WI)) was used as a diluent. Further, 0.12 parts by weight of POCAII (polyoxyalkyl polyphosphate) available from 3M Company (St. Paul, MN) (other phosphate polyoxyalkyl polyols available from other manufacturers may be used) as a dispersing agent. Add 0. 16 parts by weight of A174 Aldrich Chemical Co. (Milwaukee, WI) as a Shixi sinter coupling agent, and add 0.16 parts by weight of IrgacurTM 819 (Ciba Specialty Chemicals (Basel, Switzer land)). As a curing initiator. Further, 0.20 parts by weight of BYK A555 from BYK Chemie USA (Wal I ingford, CT) was added as a deaerator. Combine all liquid ingredients and photoinitiator in a stainless steel mixing vessel. The ingredients were remixed using a pneumatic motor driven cowles blade (VWR Scientific Products (West Chester, PA)). While the mixing blade is running, the solid component is slowly added. After all the ingredients were added, the mixture was mixed for an additional 5 minutes. The slurry was transferred to a high density polyethylene container filled with 1 /2 inch cylindrical high density alumina grinding media. Grinding was carried out for 30 minutes using a paint conditioner (Red Devil Model 5100 (Union, NJ)). The slurry is then discharged from the ball mill. Finally, the slurry was ground at 60 ° C using a three roll mill (2.5x5 TRM type, Charles Ross & Son Company (Haupauge, NY)). -29- The paper size is applicable to the Chinese National Standard (CNS) A4 size (210 x 297 mm). 1260312 A7 _______ B7 V. Illustrative (27) Using a knife coater to apply the slurry to a 2. 3 mm thick base. Limestone glass substrate (Libbey Owen Ford Glass Co. (Charleston, WV)). For all samples, the blade gap was set at 75 microns. After coating, a model having barrier rib features is laminated to the coated substrate. The laminating pressure system is nominally 〇·68 kg/cm, and the laminating speed is nominally 3 cm/sec. The model used was cast and cured on a high-strength backing material such as a 125 micron thick crucible (Ε·I. Du Pont De Nemours and Company (Wi 1 mington, DE)) polycarbonate or glazed Cured acrylate material. The model was prepared by casting and curing an acrylate resin against a metal tool. Models with different types of barrier rib microstructures were evaluated. After molding, the coated substrate is exposed to a blue light source to harden the glass frit slurry. The surface was cured on a 1 · 5 inch (about 3.8 cm) sample surface using a blue light source. The light source is composed of 10 super-light-emitting fluorescent lamps (TLDK 30W/03 type, Philips Electronics N.V. (Einhoven, Netherlands)) separated by 2 inches (about 5.2 cm). These super-lighting lamps provide light in the wavelength range of about 400 to 500 nanometers (nm). The curing time is typically 30 seconds. The model is removed and the sample is sintered in air according to the following thermal cycle: 3 ° C / min to 300 ° C, 5 ° C / min to 560 e C, maintained for 20 minutes, and at 2-3 ° C / min Cool to ambient temperature. During the sintering process, the barrier ribs are pressed to the hard glass substrate. Due to this compression, in-plane stress is generated when the barrier ribs are densified and contracted during sintering. Furthermore, due to the -30-paper scale in the barrier ribs and adjacent continuous ground areas, the Chinese National Standard (CNS) A4 specification (210X 297 mm) is applied. 1260312 A7 B7 5. Inventive Note (between 28 characteristic thicknesses The large difference produces large differential stresses during the sintering process. Therefore, the sharp corners at the bottom of the barrier ribs show a high tendency to crack during the sintering process. The result is no different than that in this area. To alleviate this crack, the transition from the barrier rib to the ground is done in a fairly smooth manner. Mathematically, if the transition from the sidewall of the barrier rib to the ground appears as a continuous line, the derivative of this function is continuous. It is preferred to avoid large stress concentrations. In Examples 4-8 and 10, barrier ribs having various rib bottom radius of curvature were tested, all of which produced free portions of the split. In the case of Examples 3 and 9, Radius blending is not completely tangent to the ground layer and cracks are observed. Rib cracks are using light microscopy (through transmitted light) (Leitz DMRBE, Leica Mikroskopie & System GmbH (Wetzlar, Germany)) and scanning electron microscopy (AMPAX 1920 (Bedford, MA)) evaluation. All cracks were observed at the bottom of the rib. The following table provides information on the products made in the examples. Refer to the original state before sintering. The traction angle refers to the angle of the barrier line relative to the vertical. Example rib pitch (pm) rib south (μπι) top width (μπι) traction angle rib bottom radius of curvature blended Quality crack? 1 360 202 68 8° <0. 1 μηη N/a is 2 220 185 75 8° Cut surface N/a is 3 360 213 37 8° 50 The difference is 4 360 213 37 8° 50 Good No 5 286 202 37 8° 25 Good No-31 - This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm)

裝訂Binding

k 1260312 A7 B7k 1260312 A7 B7

五、發明説明（29 )V. Description of invention (29)

A4 了 /由實施例11-14係以與實施例卜10相同的〜用金屬測厚規調整塗層間隙。此等模型〜渾壁肋條尺寸袁 360微米節距、21 3微米高、37微米肋條頂邮 Λ — 肖峥寬度、8。牽引角、及50微米平滑半徑摻混。午A4/from Example 11-14 is the same as Example 10 to adjust the coating gap with a metal thickness gauge. These models ~ 浑 wall rib size Yuan 360 micron pitch, 21 3 micron high, 37 micron ribs top post Λ — Xiao Wei width, 8. Traction angle, and 50 micron smooth radius blending. Noon

實施例Example

層合速度 (cm/sec) 層合壓力 (kg/cm) 經燃燒地面厚度 (μπι)Laminating speed (cm/sec) Laminating pressure (kg/cm) Compressed ground thickness (μπι)

此顯示可經由選擇塗層厚度而控制地面厚度裝訂This display controls the thickness of the floor by selecting the thickness of the coating.

實施例15 如實施例1至10之說明將微結構化障壁肋條形成於基材上。在脫黏及燒結過程中，將障壁肋條末端加重物以防止變形。使用三種不同的長條材料作為重物：i) 98%鋁，2) 經釔安定化之锆氧，及3)鹼石灰玻璃。鋁件為1 02公分X 25·4公分X 0.060公分，6.0克，以360微米節距覆蓋大約282 個肋條。玻璃件為14· 2 X 2 X 0· 28公分，19. 8克，以360 -32- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 1260312Example 15 Microstructured barrier ribs were formed on a substrate as described in Examples 1 through 10. During the debonding and sintering process, the ends of the barrier ribs are weighted to prevent deformation. Three different strips of material were used as weights: i) 98% aluminum, 2) zirconium stabilized by yttrium, and 3) soda lime glass. The aluminum piece is 1 02 cm X 25·4 cm X 0.060 cm, 6.0 g, covering approximately 282 ribs at a 360 μm pitch. The glass piece is 14· 2 X 2 X 0·28 cm, 19.8 g, with 360 -32- This paper scale is applicable to Chinese National Standard (CNS) Α4 specification (210X297 mm) 1260312

微米節距覆蓋大約394個肋條。鍅氧件為5·8 χ 2 χ 〇 5公分，34. 8克，覆蓋大約161個肋條。如下表所列，將不同的負荷施加於肋條邊緣上。所有樣品的肋條高度為2〇2微米及 360微米節距。肋條數=長度/節距。可基於角度、重量、及皇寬I度而以牛頓/肋條為單位計备荷角度，重物尺寸（cm: 材料鋁氧 SL玻璃錯氧長度 102 14· 2 5. 8 寬度 25· 4 2. 0 2· 0 厚度 0. 06 0· 28 0· 5 重量gm6_ 19· 8 34. 8 A 0^ 0· 肋條負荷 N/rib 0.0001 Q.00025 0.0011 在所有情況中，於脫黏及燒結後，肋條末端實質上並未在燒結過程中提升。當在此程序中使用鍅氧重物時，肋條末端短10-20微米。於脫黏及燒結之後，錘氧重物展現最小之對玻璃玻料的黏著量，及鹼石灰玻璃展現最大的黏著量。於燒結之後在錘氧重物上並未觀察到殘留的玻璃玻料。有小的玻璃玻料碎片於燒結之後黏合至鹼石灰玻璃長條。不應將本發明視為受限於前述之特定實施例，反之應明暸其係涵蓋詳盡記述於隨附之申請專利範圍中之本發明的所有態樣。熟悉本發明相關技藝之人士當回顧本說明書時當可容易明白可應用本發明的各種修改、相等方法、以及許多結構。 -33- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)The micron pitch covers approximately 394 ribs. The oxygen-absorbing member is 5·8 χ 2 χ 〇 5 cm, 34.8 g, covering approximately 161 ribs. Apply different loads to the rib edges as listed in the table below. The rib height of all samples was 2 〇 2 μm and 360 μm pitch. Number of ribs = length / pitch. The angle of the load can be calculated in Newtons/ribs based on the angle, weight, and height I. The weight dimension (cm: material aluminum oxide SL glass wrong oxygen length 102 14· 2 5. 8 width 25· 4 2. 0 2· 0 Thickness 0. 06 0· 28 0· 5 Weight gm6_ 19· 8 34. 8 A 0^ 0· Rib load N/rib 0.0001 Q.00025 0.0011 In all cases, after debonding and sintering, ribs The ends are not substantially lifted during the sintering process. When the helium weight is used in this procedure, the ends of the ribs are 10-20 microns shorter. After debonding and sintering, the hammer weights exhibit minimal glass to glass. Adhesion, and soda-lime glass showed the greatest amount of adhesion. No residual glass frit was observed on the hammered oxygen weight after sintering. Small glass frits were bonded to the soda lime glass strip after sintering. The present invention is not to be considered as being limited to the details of the details of the present invention. It is intended to cover all aspects of the invention as described in the appended claims. It is easy to understand that the present invention can be applied at the time of the specification. Various modifications, equivalent methods, as well as numerous structures. -33- This paper scales applicable Chinese National Standard (CNS) A4 size (210X297 mm)

Claims

126034291 121595號專利申請案中文申請專利範圍修正本(9、5年3月）漂 - J 7 ίγ»〇申請專利範圍公告本 A8 B8 1. 種微結構化之組合，包括一基材；及年灼ί】95· 3. 31 认置於基材上之複數個微結構，該複數個微結構包括交替的包括一材料之障壁部分及地面部分，其分別具有障壁表面及地面表面，各障壁部分及相鄰的地面部分藉由曲線部分結合，此曲線部分具有延伸自地面表面並‘ 質上與其成連續的曲面，及其中該地面部分之材料與障壁部分之材料係連續的。 2·根據申請專利範圍第1項之組合，以該基材係為玻壤基材，其包括複數個設置於玻璃基材上之電極。 3.根據中請專職圍第2項之組合，其巾該微結構係與基材上之複數個電極對準。 ^ 土 4·根據申請專利範圍第1項之組合，其中該曲面係由單— 的曲率半徑所定義。 5. 根據申請專利範圍第4項之組合，其中該曲面包括在障为尚度之5-200 %範圍内之曲率半徑。 6. 根據申請專利範圍第1項之組合’其中該曲面係由至小兩曲率半徑所定義。 ) 7·根據申請專利範圍第6項之組合，其中最小的曲率半徑係卩早壁部分雨度之至少5%，及最大的曲率半徑係障壁分高度之不多於200%。土 ° 8·根據申請專利範圍第6項之組合，其中該曲面包括靠近地面表面之第一曲率半徑及靠近障壁表面之第二曲= 半仅其中3亥弟一曲率半徑較該第一曲率半後小。'126034291 Patent No. 121595 Patent Application Revision of Chinese Patent Application (March 9, May) Bleaching - J 7 ίγ»〇 Patent Application Announcement A8 B8 1. A combination of microstructures, including a substrate; Ίί】 95· 3. 31 A plurality of microstructures disposed on a substrate, the plurality of microstructures including alternating barrier portions including a material and ground portions, respectively having a barrier surface and a ground surface, each barrier portion And the adjacent ground portion is joined by a curved portion having a curved surface extending from the ground surface and being qualitatively continuous therewith, and wherein the material of the ground portion is continuous with the material of the barrier portion. 2. According to the combination of the first aspect of the patent application, the substrate is a glass substrate, which comprises a plurality of electrodes disposed on a glass substrate. 3. According to the combination of item 2 of the full-time division, the microstructure of the towel is aligned with a plurality of electrodes on the substrate. ^ Soil 4· According to the combination of the first application of the patent scope, wherein the surface is defined by the radius of curvature of the single--. 5. A combination according to claim 4, wherein the curved surface comprises a radius of curvature in the range of 5-200% of the barrier. 6. According to the combination of claim 1 of the scope of the patent application, wherein the curved surface is defined by a radius of curvature to a small radius. 7) According to the combination of the scope of claim 6 of the patent application, wherein the minimum radius of curvature is at least 5% of the rain of the early wall portion, and the maximum radius of curvature is not more than 200% of the height of the barrier wall. 8. The combination according to claim 6 wherein the curved surface comprises a first radius of curvature close to the surface of the ground and a second curvature near the surface of the barrier = half of which is only a radius of curvature of the third curvature After the small. '

1260312 -~-—.^、、申清專利範圍 A B c D 9·根據申請專利範圍第1項之組合，其中該曲面係起自輕障壁部分之頂部更靠近基材之障壁斜率線根據申請專利範圍第1項之組合，其中該曲面係終止衣較障壁斜率線更靠近鄰接障壁部分之電極之側面的辦面線。根據申請專利範圍第1項之組合，其中該曲線部分之# 面積係在障壁部分面積之5-80%之範圍内。根據申請專利範圍第1項之組合，其中該障壁部分更自括階梯形狀的末端。 3 ’根據申凊專利範圍第丨2項之組合，其中該階梯形狀的库端包括至少兩階梯。 14·根據申請專利範圍第13項之組合，其中各階梯包括：高度至少20微米之垂直階梯表面，見度較泫垂直階梯表面之高度大之水平階梯表面，其中該垂直階梯表面及該水平階梯表面形成一階梯角’該階梯角係至少90。。 15·根據申請專利範圍第1項之組合表面實質上為連續。根據申請專利範圍第1項之組合不多於75微米之其頂部之寬度。一種微結構化之組合，包括：一背側玻璃基材，其具有形成圖幸 > 址之電極；及 ϋ木之谩數個可獨立複數個陶瓷微結構，包括交替的 J匕栝一材料之障壁 10 11 12 16 其中該曲面及該障其中各障壁部分具 -2 - 17. 18, 1260312 六、申請專利範園分及地面部公，甘八σ, 一刀別具有障壁表面及地面表面，各障 Si::: Γ的地面部分藉由曲線部分結合，此曲線部 :” 地面表面並實質上與其成連續的曲面，其之材料與障壁部分之材料係連續的，該陶 £ 構係與基材上之電極對準。一種形成微結構之方法，包括：將可固化材料設置於圖案化基材上； :二权型將可固化材料成形成設置於圖案化之稷數個微結構，該複數個微結構包料之障壁部分及地面部分，匕括材 77八刀別具有P早壁表面及地面 :曲ίΓ壁部分及相鄰的地面部分藉由曲線部分結合的：nt具有延伸自地面表面並實質上與其成連續 =及部分之材料與障壁部分之材料係連將模型移除。 T據申請專利範圍第18項之方法，其中該成形步驟包括使可固化材料固化。 20.2據申請專利範圍第18項之方法，其中該成形步驟包括處理微結構，以使微結構實質上硬化。 21·晴請專利範圍第18項之方法，其中。該成形步驟包括將Μ結構脫黏及燃燒，以使微結構實質上硬化 22·根據申請專利範圍第18項之方法，其更包括拉伸㈣，以使該複數個微結構之至少—部分與圖案化基材對準。 2 3· —種形成微結構之方法，包括： -3 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐）裝訂 19. 1260312 申請專利範圍將包含陶瓷粉末及可固化易變黏合劑之混合物的料漿設置於經複數個電極圖案化之玻璃基材上；利用圖案化模型將料漿成形成設置於基材上之複數個 U…構，该複數個微結構包括交替的包括一材料之障壁部刀及也面口ρ刀，其分別具有障壁表面及地面表面，各障壁部分及相鄰的地面部分藉由曲線部分結合，此曲線部分2 有延伸自地面表面並實質上與其成連續的曲面，其中該地面部分之材料與障壁部分之材料係連續的；使可固化易變黏合劑固化以使料漿硬化及使料著至基材；、將模型移除，而留下黏著至玻璃基材之料聚的原始狀恕微結構’該原始狀態微結構實質上係複製圖案化模型 :及將原始狀態微結構脫黏及燃燒’以實質上燒盡易變黏 24, 25 合劑及燒結陶瓷粉末，而形成陶竞微結構。一種將微結構之障壁末端成形之方法，包括：將一重物外加至至少一原始肤綠彡〒始狀恕U結構之障壁末端 ’其中重物之一部分的底部與障壁太觸；早土末糕之頂部角落接將原始狀態微結構脫黏及燃燒；及將重物移除。根據申凊專利範圍第2 4項之方法，並由 ^ 具中该重物包括锆氧。 4- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)1260312 -~--.^,, Shen Qing patent range AB c D 9 · According to the combination of the first application of the patent scope, wherein the curved surface is from the top of the light barrier portion closer to the substrate barrier slope line according to the patent application The combination of the first item of the range, wherein the curved surface termination garment is closer to the side line of the side of the electrode adjacent to the barrier portion than the barrier slope line. According to the combination of the first aspect of the patent application, wherein the area of the curve portion is in the range of 5 to 80% of the area of the barrier portion. A combination according to the first aspect of the patent application, wherein the barrier portion further includes a stepped end. 3 'A combination according to claim 2, wherein the stepped end includes at least two steps. 14. The combination according to claim 13 wherein each step comprises: a vertical stepped surface having a height of at least 20 microns, a horizontal stepped surface having a height greater than a height of the vertical stepped surface, wherein the vertical stepped surface and the horizontal step The surface forms a step angle 'the step angle is at least 90. . 15. The combination according to item 1 of the scope of the patent application is substantially continuous. The combination of item 1 of the scope of the patent application is not more than the width of the top of 75 microns. A combination of microstructures, comprising: a backside glass substrate having electrodes forming a map; and a plurality of independently independent ceramic microstructures, including alternating J-shaped materials The barrier 10 11 12 16 wherein the curved surface and the barrier portion of the barrier have a -2 - 17. 18, 1260312 6. The patent application is divided into a garden section and a ground section, and the barrier has a barrier surface and a ground surface. The obstacles of the Si::: 地面 ground part are combined by a curved part, which is: the surface of the ground and is substantially continuous with its curved surface, the material of which is continuous with the material of the barrier portion, and the structure of the ridge is Electrode alignment on a substrate. A method of forming a microstructure, comprising: disposing a curable material on a patterned substrate; : a dual-weight forming the curable material into a plurality of microstructures disposed in the patterning, The barrier portion and the ground portion of the plurality of microstructured materials have a P-front wall surface and a ground surface: the curved wall portion and the adjacent ground portion are combined by a curved portion: nt has The method of claim 18, wherein the forming step comprises curing the curable material, extending from the surface of the floor and substantially contiguous with the material of the material and the barrier portion. The method of claim 18, wherein the forming step comprises processing the microstructure to substantially harden the microstructure. The method of claim 18, wherein the forming step comprises debonding the crucible structure And burning to substantially harden the microstructure. 22. The method of claim 18, further comprising stretching (4) to align at least a portion of the plurality of microstructures with the patterned substrate. · A method for forming microstructures, including: -3 - This paper scale applies to China National Standard (CNS) Α4 specification (210X297 mm) Binding 19. 1260312 The patent application scope will include ceramic powder and curable variable binder The slurry of the mixture is disposed on a glass substrate patterned by a plurality of electrodes; the slurry is formed into a plurality of patterns disposed on the substrate by using a patterned model The plurality of microstructures include alternating barrier knives including a material and a noodle knives having a barrier surface and a ground surface, respectively, and the barrier portions and the adjacent ground portions are combined by curved portions. The curved portion 2 has a curved surface extending from the surface of the ground and substantially continuous therewith, wherein the material of the ground portion is continuous with the material of the barrier portion; curing the curable variable adhesive to harden and materialize the slurry To the substrate; remove the model, leaving the original microstructure of the material adhered to the glass substrate. The original state microstructure is essentially a replica pattern: and the original state microstructure is debonded and Burning 'to substantially burn out the easily viscous 24, 25 mixture and sintered ceramic powder to form the Tao Jing micro structure. A method of forming a barrier end of a microstructure, comprising: applying a weight to at least one original skin green 彡〒恕恕 U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U The top corner connects the original state microstructure to debond and burn; and removes the weight. According to the method of claim 24, and the weight includes zirconium oxide. 4- The paper size applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm)