TWI258641B - Stripper composition for photoresist - Google Patents

Abstract

The present invention relates to a TFT-LCD high-performance stripper composition for a photoresist, and more particularly to a stripper composition for a photoresist comprising: 20 to 60 wt% of monoethanolamine, 15 to 50 wt% of N,N-dimethylacetamide, 15 to 50 wt% of carbitol, and 0.1 to 10 wt% of gallic acid. The present invention also provides a stripper composition for a photoresist comprising: 20 to 60 wt% of monoethanolamine, 15 to 50 wt% of N,N-dimethylacetamide, 15 to 50 wt% of carbitol. The stripper composition for a photoresist of the present invention significantly reduces stripping time, when applied to the TFT-LCD manufacturing process. It also leaves no remaining impurity particles due to good stripping ability. And, because the hard baking and ashing processes can be omitted, the gate process line can be simplified, which enables cost reduction. In addition, when it is applied to a process wherein silver (Ag) is used as reflective/transflective layer, it offers stripping ability and corrosion resistance of the pure Ag layer.

Description

1258641 玖、發明說明 【發明所屬之技術領域】 本發明係關於一種光阻之剝除劑組合物，明確言之係 關於一種可簡化一 TFT-LCD線路與一半導體1C等之閘線路 製程之光阻之剝除劑組合物。 【先前技術】 LCD線路與半導體1C具有非常細的結構。這些細結構 線路係藉由下列步驟加以製備··均句地塗佈或施加一光阻於 一基板上之一絕緣層（如一金屬氧化層）或一傳導層（如一銘 合金層）上；曝光與顯影該光阻以形成一圖案；及使用一光罩 餘刻金屬層或絕緣層。而後，移除光阻圖案以獲致線路。 一雙傳導層而非一單金屬層，一般至少包含由鋁或如鋁 鈦之鋁合金材料形成之一上層（第一傳導層），與由鉻、鉬、 或其之合金材料所形成之一底層（第二傳導層），其係用於如 一 LCD之組件中之閘線路之傳導金屬層。 近來，具有比鋁-鈥較佳反射性之銀（Ag)係常作為反射電 極此即為，隨著用於攜帶式行動電話與PDA(個人數位助 )中尺寸或小尺寸TFT-LCD的成長，銀係被使用於反射 型LCD以改善基板的特性。然而，銀比銘更不易加工，且因 銀具不好的化學抗性而易被腐餘。此外，銀的釋出引起化學 槽之污染並影響接續製程，而引起層厚的縮減與⑶之損失。 此間線路之圖案化製程之實例係包含沉積—雙金屬層 於一半導體基板上，施加—光阻，曝光，顯景彡，|«第-傳 1258641BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a photoresist stripping agent composition, and more specifically to a light that simplifies the gate line process of a TFT-LCD line and a semiconductor 1C. A stripping agent composition. [Prior Art] The LCD line and the semiconductor 1C have a very fine structure. These fine structure lines are prepared by the following steps: uniformly coating or applying a photoresist on an insulating layer (such as a metal oxide layer) or a conductive layer (such as an alloy layer) on a substrate; exposure And developing the photoresist to form a pattern; and using a mask to etch a metal layer or an insulating layer. Then, the photoresist pattern is removed to obtain the line. a double conductive layer instead of a single metal layer, generally comprising at least one upper layer (first conductive layer) formed of aluminum or an aluminum alloy material such as aluminum titanium, and one formed of chromium, molybdenum, or an alloy thereof The bottom layer (second conductive layer) is used for the conductive metal layer of the gate line in an assembly such as an LCD. Recently, silver (Ag) which has better reflectivity than aluminum-germanium is often used as a reflective electrode, which is the growth of a small or small-sized TFT-LCD for use in a mobile phone and a PDA (personal digital assistant). Silver is used in reflective LCDs to improve the properties of the substrate. However, silver is more difficult to process than Ming, and it is easily rotted due to the poor chemical resistance of silver. In addition, the release of silver causes contamination of the chemical bath and affects the subsequent process, causing a reduction in layer thickness and a loss in (3). An example of a patterning process for this line includes a deposition-bimetal layer on a semiconductor substrate, application-resistance, exposure, and viewing, |«第传传 1258641

耗費相當多的時間。 strip)，及第二傳導層之 與去灰後實施，此製程It takes a lot of time. Strip), and the second conductive layer is implemented after deashing, the process

銘或銀之金屬層。此外， -利咏劑應在高溫與低溫均具有良 應不遺留雜質於基板上或不腐蝕如 剝除劑係較佳符合環保需求並對人 類不造成傷害。 為了滿足這些需求，數種光阻之剝除劑組合物已被建立 與使用。用於一般生產線之光阻之剝除劑組合物係含有單異 丙醇胺（monoisopropanolamine;MIPA)、N-甲基四氫呲洛烧_ (N-methylPyrr〇lid〇ne;NMP)、及卡必醇（carbitol)。雖然此組 合物不遺留反應性雜質’但其無法簡化閘製程。對於銀層， 過量腐蝕也造成其無法使用此組合物。 用於一般大量生產線之光阻之剝除劑組合物係含有單 乙醇胺（monoethanolamine;MEA)、N-曱基四氫口此u各燒鋼 (N-methylpyrrolidone;NMP)、丁四醇（butyldiglycol;BDG)、 及二甲基亞颯（dimethyl sulfoxide; DM SO)。然而，此組合物係 遺留反應性雜質且無法簡化閘製程。此外，無法移除含於剝 除劑之DMSO。 用於另一方法之光阻之剝除劑組合物係含有單異丙醇 胺（MIPA)、N-曱基四氫呲咯烷酮（NMP)、卡必醇、砜 (sulfones)、及乙二醇（glycols)。雖然此組合物不遺留反應性 雜質，但無法簡化閘製程。其價格昂貴且無法於生產線之一 20公升容器中製備。 6 1258641 此外，有一光 機溶劑如DMF、及 組合物具有良好的 【内容】 本發明係考肩 的係提供光阻之—丨 大於50%之剝除時f 傳導層之閘製程之育 本發明另一目 不腐钱如銀之金屬^ 本發明另一目 體裝置。 為了實現這些 物，其係包含20至 量百分比之N，N-二1 炱50重量百分比之 子酸（gallic acid)。 此外，本發明 包含使用含有2〇至 量百分比之N，N-二ΐ 醇、及〇· 1至1 〇重量 之光阻剝除步驟。 此外，本發明 阻之剝除劑組合物係含有一有機胺、一有 一界面活性劑之數種成分。然而，雖然此 剝除能力，但無法實現製程之簡化。 [先前技術之問題而完成，本發明之一目 奇效能剝除劑組合物，該組合物藉由降低 巧以具有簡化TFT-LCD或半導體Ic之雙 色力’以改善產率與降低成本。 的係經閘製程簡化以有效地改善產率且 &之一製備半導體裝置的製程。 的係提供藉由上述之方法製備之一半導 目的’本發明係提供光阻之剝除劑組合 重篁百分比之單乙醇胺、15至5〇重 尹基乙醯胺（N，N-dimethylacetamide)、15 卡必醇、及0· 1至1 〇重量百分比之沒食 係提供一製備半導體裝置之製程，其係 6〇重量百分比之單乙醇胺、15至50重 P基乙醯胺、15至50重量百分比之卡必 百分比之沒食子酸之一種剝除劑組合物 係提供光阻之剝除劑組合物，其係包含 7 1258641 π主ου董量百分比之單乙醇 一 矸妝15至50重量百分比之Ν，Ν- 一 Τ基乙醯胺、及15至5〇重量 刀比之卡必醇0 此外，本發明係提供一製傜 備+導體裝置的製程，其係 b 3使用含有2〇至6〇重量百 θ 刀此之早乙醇胺、15至50重 置百分比之Ν，Ν-二甲基乙醯胺、及 、。 哎及以至50重量百分比之卡 必醇之一種剝除劑組合物之光阻剝除步驟。 此外’本發明係提供藉由上述之方法製備之一半導體 裝置。 【實施方式】 本發明現將更詳細地加以闡述。 為了解決傳統光阻之剝除劑組合物之問題，本發明人明 確指明使用有機胺與有機溶劑及調節它們的含量以改善剝 ’、月b力所產生之光阻之剝除劑組合物係可縮減於閘製程中 之剝除時間並簡化TFT_LCD之閘製程線等。 本發明用於光阻之剝除劑組合物係包含2〇至6〇重量百 为比之單乙醇胺（monoethan〇iamine;MEA)、15至5〇重量百 重置百分比之卡必醇（carbitol)、及〇·ΐ至1〇重量百分比之沒 食子酸（gallic acid)。 單乙醇胺於閘製程中剝除光阻而不遺留雜質顆粒。單乙 醇胺較佳之含量係為總剝除劑組合物之2〇至6〇重量百分 更佳之含1係為35至45重量百分比。若含量低於2〇 重量百分比’剝除能力會不足且留下光阻顆粒，但若含量超 8 1258641 過60重1百分比，對光阻之吸收會降低。 n，n-二曱基乙醯胺（DMAc)係為一強溶劑，而其較佳之含 篁係為總剝除劑組合物之1 5至50重量百分比，更佳之含量 係為25至35重量百分比。若含量低於15重量百分比，會 產生低的光阻溶解度，而若含量超過5〇重量百分比，剝除 能力會不足。 本發明用於光阻之剝除劑組合物係含有卡必醇，其係為 一乙一醇單***（diethylene glycol monoethyl ether)。其作為 溶解光阻之溶劑，並進一步改善剝除能力。卡必醇之含量較· 佳為15至50重量百分比，更佳之含量係為25至35重量百 分比。若含量低於1 5重量百分比，剝除劑組合物無法被吸 收於光阻壁中，而若含量超過5〇重量百分比，剝除能力會 不足。 本發明用於光阻之剝除劑組合物係也含有沒食子酸。沒 食子酸係防止於閘製程間作為反射層之銀（Ag)的釋出，藉此 防止銀的腐蝕。沒食子酸較佳之含量係為總剝除劑組合物之 0·1至10重量百分比，更佳之含量係為！ 5至3 5重量百分鲁 比。若含量低於0· 1重量百分比，銀的腐蝕問題會上升，但 若含量超過1 0重量百分比，剝除能力會不足。 本發明之一較佳實施例中，剝除劑組合物係包含3 5至 45重量百分比之單乙醇胺、25至35重量百分比之Ν，Ν_二甲 基乙醯胺、25至35重量百分比之卡必醇、及15至重量 百分比之沒食子酸。剝除劑組合物更佳係包含4〇重量百分 比之單乙醇胺、30重量百分比之Ν，Ν-:甲基乙醯胺、重 9 1258641 置百分比之卡必醇、及2重量百分比 ,^ ，又食子酸。 本發明用於光阻之剝除劑組合物係也勺人 百分比之單乙醇胺、15至50重量百分比^ 2〇一至60重量 胺、及15至50重量百分比之卡必醇。 ，、一甲基乙醯 單乙醇胺（MEA)於閘製程中剝除光阻 、 粒。早乙醇胺較佳之含量係為總剝除劑組合$留雜質顆 量百分比，更佳之含量係為35至45重量百八之2〇至60重 於20重量百分比，剝除能力會不足且留下匕右含量低 a 1超過60重量百分比，對光阻之吸收會降低。 仁右 n，n-二甲基乙醯胺（DMAc)係為一強溶 係為總剝除劑組合物之15至5〇 /、乂佳之含量 為25至35重量百八^ 刀比，更佳之含量係 董里百分比。若含量低於15番Βτ、 Λ- Ια ΐΜ ι> 置^百为比，舍$ 生低的先阻溶解度，而若含量超過5〇 產 力會不足。 百分比，剝除能 本發明用於光阻之剝除劑組合物係 溶劑中，JL总或 S有卡必醇於有機 乙二醇單***。卡必醇係作為溶解光阻之 :I ’並進一步改善組合物之剝除能力。卡必醇之含量較佳 :15至50重量百分比，更佳為25至35重量百分比。若含 ϊ低於15重量百分比，制除劑組合物無法被吸收於光阻壁 中而若含量超過50重量百分比，剝除能力會不足。 一半導體裝置，較佳為一 TFT_LCD，係可使用本發明之 剝除劑組合物藉由移除光阻圖案而加以製備。 為了此目的，本發明藉由旋轉塗佈一常見光阻組合物以 形成一薄光阻膜於一半導體（玻璃）基板上，其中一傳導性金 10 1258641 屬層已形成於該基板上。對於具有一傳導金屬層之/玻璃基 板’其係可使用一具有一雙傳導層之常見基板、一具有一 ITO 層之基板、與一具有一銀反射層之基板，其中具有一雙傳導 層之常見基板係包含由鋁或如鋁-鈥之鋁合金材料形成之第 一傳導層（上層），與由鉻、鉬、或其之合金材料所形成之第 二傳導層（底層）。在這些中間，基板係較佳具有一銀反射 層’但本發明並不侷限於此類基板。 而後’於半導體基板上之光阻薄膜係暴露於常規曝光條 件。舉例而言，可使用之光源諸如ArF與KrF雷射、電子束 (E-beam)、X-ray、EUV、及 DUV。 曝光後之光阻薄膜而後係使用一鹼性溶液加以顯影，而 光阻圖案係使用本發明之剝除劑組合物並藉由一常見方法 諸如沉浸或喷灑加以移除以製備一半導體裝置。而後，半導 體裝置係以-有機溶劑如超純水、丙酮或乙醇清洗以去除雜 質並乾燥^關於鹼性溶液，可使用之常見鹼性溶液諸如無機 鹼（如氫氧化鈉）或季銨溶液（如氫氧四甲銨）。但不侷限於此 類溶液 本發明之剝除劑組合物係提供一良好之圖案形成，於曝 光之前或之後甚至不需硬烘烤與去灰製程。 如上所述，本發明用於光阻之剝除劑組合物係使用適當 含量之特定有機胺類與特定有機溶液 力、無雜質遺留、且經由縮減剝除時間 液。其具有良好剝除能Ming or silver metal layer. In addition, the bismuth agent should be good at both high and low temperatures. It should not leave impurities on the substrate or corrode. If the stripping agent is used, it is better for environmental protection and does not cause harm to humans. To meet these needs, several photoresist stripper compositions have been established and used. The stripper composition for photoresist of a general production line contains monoisopropanolamine (MIPA), N-methylPyrr〇lid〇ne (NMP), and a card. Carbitol. Although this composition does not leave residual reactive impurities, it does not simplify the gate process. For the silver layer, excessive corrosion also makes it impossible to use this composition. The stripper composition for the photoresist of a general mass production line contains monoethanolamine (MEA), N-methylpyrrolidone (NMP), butylenetetraol (butyldiglycol; BDG), and dimethyl sulfoxide (DM SO). However, this composition is left with reactive impurities and cannot simplify the gate process. In addition, the DMSO contained in the stripping agent cannot be removed. A photoresist composition for use in another method comprises monoisopropanolamine (MIPA), N-mercaptotetrahydropyrrolidone (NMP), carbitol, sulfones, and Glycols. Although this composition does not leave reactive impurities, it does not simplify the gate process. It is expensive and cannot be prepared in a 20 liter container in one of the production lines. 6 1258641 In addition, a optomechanical solvent such as DMF, and the composition have a good [content] The invention provides a light barrier - 丨 greater than 50% of the stripping process of the f-conducting layer Another metal that does not rot money, such as silver, is another object device of the present invention. To achieve these, it comprises 20 to a percentage by weight of N, N-di- 1 炱 50 weight percent gallic acid. Further, the present invention encompasses the use of a photoresist stripping step containing from 2 Å to 10% by weight of N,N-didecyl alcohol and from 1 to 1 Torr. Further, the stripping agent composition of the present invention contains an organic amine and a plurality of components having a surfactant. However, despite this stripping capability, the simplification of the process cannot be achieved. [Completely with the problems of the prior art, one of the present inventions is an effective stripper composition which has a bichromatic force of a simplified TFT-LCD or a semiconductor Ic by reduction to improve productivity and cost. The system is simplified by a gate process to effectively improve the yield and one of the processes for fabricating a semiconductor device. The invention provides a semi-conductive object prepared by the above method. The present invention provides a photoresist stripping agent combined with a percentage by weight of monoethanolamine, 15 to 5 〇 weights of N, N-dimethylacetamide, 15 calories. An alcohol, and a 0. 1 to 1% by weight of the edible system provides a process for preparing a semiconductor device, which is 6% by weight of monoethanolamine, 15 to 50 parts by weight of P-acetamide, and 15 to 50% by weight. A stripper composition of a gallic acid of gallic acid provides a photoresist stripper composition comprising 7 1258641 π main υ υ percentage of single ethanol 矸 makeup 15 to 50 weight percent Ν , Ν--mercaptoacetamide, and 15 to 5 〇 weight ratio of carbitol. In addition, the present invention provides a process for preparing a device + conductor device, which is used for b 3 to contain 2 〇 to 6 〇 Weight θ knives this early ethanolamine, 15 to 50 reset percentage Ν, Ν-dimethyl acetamide, and. And a photoresist stripping step of a stripper composition of 50% by weight of carbitol. Further, the present invention provides a semiconductor device prepared by the above method. [Embodiment] The present invention will now be explained in more detail. In order to solve the problem of the conventional photoresist stripper composition, the inventors have clearly indicated a stripper composition system using organic amines and organic solvents and adjusting their contents to improve the photoresist generated by peeling and monthly b-force. It can be reduced to the stripping time in the gate process and simplify the TFT_LCD gate process line. The stripping agent composition for photoresist of the present invention comprises 2 to 6 parts by weight of monoethanolic acid (MEA), 15 to 5 parts by weight, and 100% by weight of carbitol. And 〇·ΐ to 1% by weight of gallic acid. Monoethanolamine strips the photoresist during the gate process without leaving foreign particles. The preferred content of monoethanolamine is from 2 to 6 weight percent of the total stripper composition, more preferably from 35 to 45 weight percent of the system. If the content is less than 2% by weight, the stripping ability will be insufficient and the photoresist particles will be left. However, if the content exceeds 8 1258641 by 60% by 1%, the absorption of the photoresist will decrease. n,N-dimercaptoacetamide (DMAc) is a strong solvent, and preferably contains lanthanide in an amount of from 15 to 50% by weight of the total stripper composition, more preferably from 25 to 35 parts by weight. percentage. If the content is less than 15% by weight, low photoresist solubility is produced, and if the content exceeds 5% by weight, the stripping ability may be insufficient. The stripper composition for photoresist of the present invention contains carbitol, which is a diethylene glycol monoethyl ether. It acts as a solvent for dissolving the photoresist and further improves the stripping ability. The content of carbitol is preferably from 15 to 50% by weight, more preferably from 25 to 35 parts by weight. If the content is less than 15% by weight, the stripper composition cannot be absorbed in the photoresist wall, and if it exceeds 5 wt%, the stripping ability may be insufficient. The stripper composition for photoresist of the present invention also contains gallic acid. The gallic acid prevents the release of silver (Ag) as a reflective layer between the gate processes, thereby preventing corrosion of silver. The preferred content of gallic acid is from 0.1 to 10% by weight of the total stripper composition, and more preferably the content is! 5 to 35 weight percent Ruby. If the content is less than 0.1% by weight, the problem of corrosion of silver will increase, but if the content exceeds 10% by weight, the stripping ability will be insufficient. In a preferred embodiment of the invention, the stripper composition comprises from 35 to 45 weight percent monoethanolamine, from 25 to 35 weight percent rhodium, ruthenium dimethyl dimethyl acetamide, from 25 to 35 weight percent Carbitol, and 15 to weight percent gallic acid. Preferably, the stripper composition comprises 4% by weight of monoethanolamine, 30% by weight of ruthenium, Ν-:methylacetamide, a weight of 9 1258641% by weight of carbitol, and 2% by weight, ^, Eatic acid. The stripper composition for photoresist of the present invention is also a percentage of monoethanolamine, 15 to 50% by weight, 2 to 60 parts by weight of amine, and 15 to 50% by weight of carbitol. , Monomethyl hydrazine Monoethanolamine (MEA) strips photoresist and particles during the gate process. The preferred content of early ethanolamine is the percentage of the total amount of impurities in the total stripping agent combination. More preferably, the content is from 35 to 45 parts by weight, from 2 to 60% by weight, and the stripping ability is insufficient and leaves 匕. When the right content is low, a 1 exceeds 60% by weight, and the absorption of the photoresist is lowered. Renyou n, n-dimethylacetamide (DMAc) is a strong solution for the total stripping agent composition of 15 to 5 〇 /, and the content of 乂 之 is 25 to 35 weight 百 ^, more The content of Jia is the percentage of Dongli. If the content is less than 15 Βτ, Λ- Ια ΐΜ ι> set the ratio to 百, the yield is low, and if the content exceeds 5 〇, the productivity will be insufficient. Percentage, stripping energy The stripping agent composition of the present invention is used in a solvent, JL total or S has carbitol in organic ethylene glycol monoethyl ether. The carbitol is used as a dissolving photoresist: I' and further improves the stripping ability of the composition. The content of carbitol is preferably from 15 to 50% by weight, more preferably from 25 to 35% by weight. If the cerium content is less than 15% by weight, the eliminator composition cannot be absorbed in the photoresist wall and if the content exceeds 50% by weight, the detaching ability may be insufficient. A semiconductor device, preferably a TFT_LCD, can be prepared by removing the photoresist pattern using the stripper composition of the present invention. For this purpose, the present invention forms a thin photoresist film on a semiconductor (glass) substrate by spin coating a common photoresist composition on which a layer of conductive gold 10 1258641 has been formed. For a glass substrate having a conductive metal layer, a common substrate having a double conductive layer, a substrate having an ITO layer, and a substrate having a silver reflective layer having a double conductive layer may be used. Common substrate systems include a first conductive layer (upper layer) formed of aluminum or an aluminum alloy material such as aluminum-bismuth, and a second conductive layer (bottom layer) formed of chromium, molybdenum, or alloy materials thereof. Among these, the substrate preferably has a silver reflective layer 'but the invention is not limited to such a substrate. The photoresist film on the semiconductor substrate is then exposed to conventional exposure conditions. For example, light sources such as ArF and KrF lasers, electron beam (E-beam), X-ray, EUV, and DUV can be used. The exposed photoresist film is then developed using an alkaline solution which is removed using a stripper composition of the present invention and removed by a conventional method such as immersion or spraying to prepare a semiconductor device. Then, the semiconductor device is washed with an organic solvent such as ultrapure water, acetone or ethanol to remove impurities and dried. Regarding the alkaline solution, a common alkaline solution such as an inorganic base such as sodium hydroxide or a quaternary ammonium solution can be used. Such as tetramethylammonium hydroxide). However, it is not limited to such a solution. The stripper composition of the present invention provides a good pattern formation without even requiring a hard bake and ash removal process before or after exposure. As described above, the stripper composition for photoresist of the present invention uses a specific amount of a specific organic amine and a specific organic solution, no impurity remaining, and a reduced stripping time liquid. It has good stripping energy

11 1258641 反射/半反半射型技術、PVA、TV等。 之後將經由實例與相較之實例加以詳細描述。然而，下 述實例僅用於暸解本發明但並不侷限本發明。 實例 [實例1與相較實例1 ] 用於一實例1與相較實例1之光阻之剝除劑組合物係藉 由表1所示之組合物與含量製備。 [實驗實例1] 實例1與相較實例1之剝除劑組合物係實施於一般使用 之TFT閘製程。具1 300埃厚度之薄膜光阻係藉由旋轉塗佈 於具有銀沉積之兩玻璃基板上而形成，而薄膜係藉由曝光並 蝕刻銀顯影以獲得一特定圖案。加熱至6〇〇c之玻璃基板而 後藉由分別喷灑實例i與相較實例丨之剝除劑組合物於其上 而剝除，並以超純水加以清洗。剝除劑之比例示於表1。 12 1258641 _π -分類 實例1 相較實例1 含量 (重量百分比） ------ MIPA1 - 10 MEA2 40 NMP3 - 55 DMAc4 30 _^分類 實例1 相較實例1 -------- 卡必醇 30 35 沒食子酸 2 剝除時間（秒） 浸泡1/2 = 120"/120〃 浸泡1/2 = 240〃/240" (註解） 1. MIPA :單異丙醇胺（monoisopropanolamine)11 1258641 Reflective / semi-inverted half-beam technology, PVA, TV, etc. This will be described in detail later by way of examples and comparative examples. However, the following examples are only for understanding the invention but are not intended to limit the invention. EXAMPLES [Example 1 vs. Example 1] A stripper composition for use in an example 1 and a photoresist of Comparative Example 1 was prepared by the composition and content shown in Table 1. [Experimental Example 1] The peeling agent composition of Example 1 and Comparative Example 1 was carried out in a TFT gate process generally used. A film resist having a thickness of 1 300 angstroms is formed by spin coating on two glass substrates having silver deposition, and the film is developed by exposure and etching silver to obtain a specific pattern. The glass substrate heated to 6 〇〇c was then peeled off by spraying the exfoliant composition of Example i and the comparative example, respectively, and washed with ultrapure water. The ratio of the stripping agent is shown in Table 1. 12 1258641 _π - Classification example 1 Compared to Example 1 Content (% by weight) ------ MIPA1 - 10 MEA2 40 NMP3 - 55 DMAc4 30 _^ Classification example 1 Compared to example 1 -------- Card Alcohol 30 35 Gallic acid 2 Stripping time (seconds) Soak 1/2 = 120"/120〃 Soak 1/2 = 240〃/240" (Note) 1. MIPA: monoisopropanolamine

2. MEA :單乙醇胺（monoethanolamine) 3·ΝΜΡ : N-甲基四氫吼口各烧洞（N-methylpyrrolidone) 4.DMAc ·· N，N-二曱基乙酿胺（N，N-dimethylacetamide) 如表1所示，本發明（實例1)之剝除時間（1 2 0 "/1 2 0 ")係 為相較實例1之一半。 [相較實例2與3] 現在用於大量生產線之剝除劑組合物係藉由表2所示之 組合物與含量加以製備。 [實驗實例2] 13 1258641 實例1與相較實例1至3之剝除劑組合物係實施於以銀 作為反射層之一 TFT閘製程。銀之釋出量（於70°C、沉浸形 式，單位=ppb)係藉由ICP分析隨時間之變化，而其結果示 於表2中。可被處理之光阻沉積玻璃基板數目係也示於表2。 [表2] 分類 實例1 相較實 例1 相較實 例2 相較實 例3 含量 MIPA1 - 10 - 10 (重量百分比） MEA2 40 - 20 NMP3 - 55 40 50 DMAc4 30 - - - 卡必醇 30 35 - 13 BDG5 - - 20 - DMS06 - - 20 - 1，1-二氧化 四氫遠吩 - - - 20 TEG7 - - - 7 I 沒食子酸 (重量百分比） 2 - - - 銀釋出量 10分鐘 61 3872 225 177 (ppb) 30分鐘 155 8793 876 352 24小時 174 100% 釋出 12983 1451 14 1258641 可處理基板 1500 500 100 0 數目 (註解） 1. MIPA ··單異丙醇胺（monoisopropanolamine) 2. MEA :單乙醇胺（monoethanolamine) 3. NMP : N-曱基四氫说洛烧酮（N-methylpyrrolidone) 4. DMAc : N，N-二甲基乙醯胺（N，N-dimethylacetamide)2. MEA: monoethanolamine 3·ΝΜΡ : N-methylpyrrolidone (DMA) · DMAc ··N,N-dimercaptoamine (N,N-dimethylacetamide As shown in Table 1, the stripping time (1 2 0 "/1 2 0 ") of the present invention (Example 1) is one half of that of Example 1. [Comparative Examples 2 and 3] The stripper compositions currently used in mass production lines were prepared by the compositions and contents shown in Table 2. [Experimental Example 2] 13 1258641 The peeling agent composition of Example 1 and Comparative Examples 1 to 3 was carried out in a TFT gate process using silver as a reflective layer. The amount of silver released (at 70 ° C, immersion form, unit = ppb) was analyzed by ICP over time, and the results are shown in Table 2. The number of photoresist deposited glass substrates that can be processed is also shown in Table 2. [Table 2] Classification Example 1 Compared with Example 1 Compared with Example 2 Compared with Example 3 Content MIPA1 - 10 - 10 (% by weight) MEA2 40 - 20 NMP3 - 55 40 50 DMAc4 30 - - - Carbitol 30 35 - 13 BDG5 - - 20 - DMS06 - - 20 - 1,1-Dihydrogen tetrahydrazide - - - 20 TEG7 - - - 7 I Gallic acid (% by weight) 2 - - - Silver release 10 minutes 61 3872 225 177 (ppb) 30 minutes 155 8793 876 352 24 hours 174 100% Release 12983 1451 14 1258641 Processable substrate 1500 500 100 0 Number (Note) 1. MIPA · monoisopropanolamine 2. MEA: Monoethanolamine 3. NMP : N-methylpyrrolidone 4. DMAc : N,N-dimethylacetamide

5. BDG ·· 丁四醇（butyldiglycol) 6. DM SO ：二甲基亞颯（dimethyl sulfoxide) 7. TEG :三甘醇（triethylene glycol) 如表2所示，銀的釋出量隨時間增加。於相較實例1中， 銀於24小時後1 〇〇〇/〇釋出，而相較實例2與3係也釋出過量 的含量。此外，相較實例中之可處理之玻璃基板數目係僅0 至 500 〇 相反地，於實例1中，使用沒食子酸係抑制銀的釋出。 因此，相較於相較實例1至3，實例1之剝除組合物係具有 較佳的銀抗腐姓性。此外，可處理之玻璃基板數目也遠大於 相較實例1至3之數目。 [實驗實例3] 具20,000埃厚度之薄膜光阻係藉由旋轉塗佈於具有銀 %積之一玻璃基板上而形成，而薄膜係藉由曝光並蝕刻銀顯 影以獲得一特定圖案。加熱至60°C之玻璃基板而後藉由喷 ;麗實例1之剝除劑組合物於其上而剝除，而玻璃基板係以超 15 1258641 純水加以清洗並以電子顯微鏡觀察。繁】as & 木圃至第le圖係為 玻璃基板之左上、左下、中間、右上與右下’、… 1刀疋冤子顯微 鏡照片（X 3 0 0 )，其中玻璃基板上於實例]φ J 1 T製備之剝除劑组 合物係實施於純銀反射層。 ' 第la圖至第le圖係顯示無雜質顆粒存在且剝除步騍已 成功地完成。偏壓值分別為5.87μιη、5>89μιη、5 91|^ 5·83μιη、及5.87μιη，而於此區域間無顯著的差異產生。 [實驗實例4]5. BDG · butyldiglycol 6. DM SO : dimethyl sulfoxide 7. TEG : triethylene glycol As shown in Table 2, the amount of silver released increases with time. . In comparison with Example 1, silver was released at 1 〇〇〇/〇 after 24 hours, and an excess amount was released compared to Examples 2 and 3. Further, the number of glass substrates which can be treated in the examples is only 0 to 500 Å. Conversely, in Example 1, the release of silver is suppressed using gallic acid. Therefore, the stripping composition of Example 1 has a preferred silver anti-corrosion property as compared to Examples 1 to 3. Moreover, the number of glass substrates that can be processed is also much larger than the number of Examples 1 to 3. [Experimental Example 3] A film resist having a thickness of 20,000 angstroms was formed by spin coating on a glass substrate having a silver % product, and the film was developed by exposure and etching of silver to obtain a specific pattern. The glass substrate heated to 60 ° C was then peeled off by spraying on the stripping agent composition of Example 1, and the glass substrate was washed with super 15 1258641 pure water and observed under an electron microscope.繁】As & 圃 第 第 le le le le le le le le le le le le le le le le le le le le le le le le le le le le le le 玻璃 le le le le le le 玻璃 玻璃 玻璃 le 玻璃 玻璃 玻璃 玻璃 玻璃 玻璃The stripper composition prepared by φ J 1 T was applied to a pure silver reflective layer. The first to the first diagrams show the presence of impurity-free particles and the stripping step has been successfully completed. The bias voltage values were 5.87 μηη, 5 > 89 μιη, 5 91 |^ 5·83 μιη, and 5.87 μηη, respectively, and no significant difference occurred between the regions. [Experimental Example 4]

。測量隨 實例1與相較實例3之剝除劑組合物係於〇 及24小時等時間間隔加以蒸發，並施以剝除測試 時間變化之偏壓，而其結果示於表3。 [表3] (單位：μιη) 分類 起始 1小時 3小時 6小時 24小時 實例1 5.83 5.84 5.88 5.86 4 4 5.89 相較實例3 5.89 5.81 5.86 5.93 7.29 如表3所示，本發明（實例丨）之剝除劑組合物係比相較 $ 實例3具有更佳之時間穩定性。 [實驗實例5 ] 實例1之剝除劑組合物係用於真正的TFT_LCD製作程 序中由起使步驟至TFT完成，以獲致一 15〇吋pvA與一 才反射型DVC(數位錄影機）。實施EDS(electric die sorting電子晶粒排序）測試於產品上，@其結果示於第2圖 第3圖。如第2圖與第3圖所示，使用實例1之剝除劑組 16 1258641 合物製備之15.0吋PVADVC與一 3.5吋反射型Dvc係具有 良好的電流-電壓（I-V)特性。 [實例2與相較實例4] 對於使用實例1之剝除劑組合物製備之一銀反射層基板 係測量其反射性三次（實例2)。而對於使用傳統剝除劑組合 物（相較實例4)製備之銀-鈥反射層係測量其反射性二次。 (LCD 5 000 ; BaS04表面反射性=100%)。結果示於表4 [表4] 分類 實例2 相輕眚你丨Λ 樣本編號 #1 #2 #3 #1 #2 反射性（％) 246 234 240 195 —— 159 ^—1 如表4所示，本發明（實例1)之剝除劑組合物所製備之 基板比傳統銀-鈥基板係具有較佳反射性（234至246%>。 [實例3與相較實例5]. The stripping agent composition of Example 1 and Comparative Example 3 was measured by evaporation at a time interval of 〇 and 24 hours, and a bias voltage of a stripping test time was applied, and the results are shown in Table 3. [Table 3] (Unit: μιη) Classification Start 1 hour 3 hours 6 hours 24 hours Example 1 5.83 5.84 5.88 5.86 4 4 5.89 Compared with Example 3 5.89 5.81 5.86 5.93 7.29 As shown in Table 3, the present invention (example 丨) The stripper composition has better time stability than Example 3. [Experimental Example 5] The stripper composition of Example 1 was used in a real TFT_LCD fabrication process from the start-up step to the TFT to obtain a 15 〇吋pvA and a reflective DVC (Digital Video Recorder). The EDS (electric die sorting) test was carried out on the product, and the results are shown in Fig. 2 and Fig. 3. As shown in Figs. 2 and 3, the 15.0 吋 PVADVC prepared using the stripping agent group 16 1258641 of Example 1 and the 3.5 吋 reflective Dvc system had good current-voltage (I-V) characteristics. [Example 2 and Comparative Example 4] A silver reflective layer substrate prepared by using the stripper composition of Example 1 was measured for its reflectance three times (Example 2). The reflectance was measured twice for the silver-rhenium reflective layer prepared using the conventional stripper composition (compared to Example 4). (LCD 5 000 ; BaS04 surface reflectivity = 100%). The results are shown in Table 4 [Table 4] Classification Example 2 Lightly 眚 丨Λ Sample No. #1 #2 #3 #1 #2 Reflectivity (%) 246 234 240 195 —— 159 ^—1 As shown in Table 4 The substrate prepared by the stripper composition of the present invention (Example 1) has better reflectivity (234 to 246%) than the conventional silver-ruthenium substrate system. [Example 3 vs. Example 5]

實例3與相較實例5之光阻之剝除劑組合物係藉由表 所示之組合物與含量加以製備。 [實驗實例6] 實例3與相較實例5之剝除劑組合物係實施於一般使用 之TFT閘製程。具1 300埃厚度之薄膜光阻係藉由旋轉塗佈 於具有銀沉積之一玻璃基板上而形成’而薄膜係藉由曝光並 蝕刻銀顯影以獲得一特定圖案。加熱至6〇°C之玻璃基板而 後藉由分別喷灑實例3與相較實例5之剝除劑組合物於其上 17 1除’並以超純水加以清洗。剝除劑之比例示於表5。 5] ___ 分類 實例3 相較實例5 含量 (重量百分比） MIPA1 - 10 MEA2 40 - NMP3 - 55 DMAc4 30 - 卡必醇 30 35 沒食子酸 2 - 剝除時間（秒） 浸泡1 / 2 = 120"/120" 浸泡1/2 = 240"/240〃The stripper composition of Example 3 and the photoresist of Comparative Example 5 was prepared by the composition and content shown in the Table. [Experimental Example 6] The stripping agent composition of Example 3 and Comparative Example 5 was carried out in a TFT gate process generally used. A thin film photoresist having a thickness of 1,300 angstroms is formed by spin coating on a glass substrate having silver deposition, and the film is developed by exposure and etching silver to obtain a specific pattern. The glass substrate heated to 6 ° C was then sprayed by ultrapure water by spraying Example 3 and the stripper composition of Example 5, respectively, on it. The ratio of the stripping agent is shown in Table 5. 5] ___ Classification Example 3 Compared to Example 5 Content (% by weight) MIPA1 - 10 MEA2 40 - NMP3 - 55 DMAc4 30 - Carbitol 30 35 Gallic acid 2 - Stripping time (seconds) Soak 1 / 2 = 120&quot ;/120" Soak 1/2 = 240"/240〃

(註解） 1.MIPA :單異丙醇胺（monoisopropanolamine) 2·ΜΕΑ :單乙醇胺（monoethanolamine) 3. NMP : N -甲基四氫口此 口各烧酮（N-methylpyrrolidone) 4. DMAc : N，N-二甲基乙醯胺（N，N-dimethylacetamide)(Note) 1. MIPA: monoisopropanolamine 2 · ΜΕΑ : monoethanolamine 3. NMP : N-methyl tetrahydrogen port N-methylpyrrolidone 4. DMAc : N , N-N-dimethylacetamide

如表5所示，用於實例3之基板之剝除時間（120"/120") 係為相較實例5之一半。 [相較實例6與7] 現在用於大量生產線之剝除劑組合物係藉由表6所示之 組合物與含量加以製備。 [實驗實例7] 18 1258641 實例3與相較實例5至7之剝除劑組合物係實施於以銀 作為反射層之一 TFT閘製程。銀之釋出量（於70°C、沉浸形 式，單位=ppb)係藉由ICP分析隨時間之變化，而其結果示 於表6中。可被處理之光阻沉積玻璃基板數目係也示於表6。 [表6]As shown in Table 5, the stripping time (120 "/120") of the substrate used in Example 3 was one half of that of Example 5. [Comparative Examples 6 and 7] The stripper compositions currently used in mass production lines were prepared by the compositions and contents shown in Table 6. [Experimental Example 7] 18 1258641 The stripping agent composition of Example 3 and Comparative Examples 5 to 7 was carried out in a TFT gate process using silver as a reflective layer. The amount of silver released (at 70 ° C, immersion form, unit = ppb) was analyzed by ICP over time, and the results are shown in Table 6. The number of photoresist deposited glass substrates that can be processed is also shown in Table 6. [Table 6]

分類 實例3 相較實 例5 相較實 例6 相較實 例7 含量 MIPA1 - 10 - ( 10 (重量百分比） MEA2 40 - 20 - NMP3 - 55 40 50 DMAc4 30 - - - 卡必醇 30 35 - 13 BDG5 - - 20 - DMS06 - - 20 - 1，1 -二氧化 四氫邊吩 - - - 20 TEG7 - - - 7 銀釋出量 10分鐘 61 3872 225 177 (ppb) 30分鐘 155 8793 876 352 24小時 174 100% 1 2983 1451 可處理基板 數目 1500 500 100 0 (註解） 19 1258641 1. MIPA ·單異丙醇胺（mon〇is〇pr〇pan〇iarnine) 2. MEA ·早乙醇胺（monoethanolamine) 3·ΝΜΡ - N-甲基四氫说？各烧酿i(N-methylpyrrolidone) 4. DMAc : N，N-二甲基乙醯胺（N，N-dimethylacetamide) 5. BDG : 丁四醇（butyldiglycol) 6. DMS 0 : 一 甲基亞石風（dimethylsulfoxide) 7. TEG:二甘醇（triethylene glycol) 如表6所示，銀的釋出量隨時間增加。於相較實例5中，· 銀於24小時後1 〇〇〇/〇釋出，而相較實例6與7係也釋出過量 的含量。此外’相較實例中之可處理之玻璃基板數目係僅〇 至 500 〇 [實驗實例8] 具20,000埃厚度之薄膜光阻係藉由旋轉塗佈於具有銀 沉積之一玻璃基板上而形成，而薄膜係藉由曝光並蝕刻銀顯 影以獲得一特定圖案。加熱至6〇〇c之玻璃基板而後藉由噴 灑實例3之剝除劑組合物於其上而剝除，而玻璃基板係以超 純水加以清洗並以電子顯微鏡觀察相同於實驗實例3之區 域。無雜質顆粒存在且剝除步驟已成功地完成。偏壓值分別 為 5·87μιη、5·89μιη、5.91μιη 、5 83 叫、及 5 87叫，而於 此區域間無顯著的差異產生。 [實驗實例9] 20 1258641 Μ實例與相較實例7之剝除劑組合物係於〇、i、3、6及 等寺間間隔加以蒸發，並施以剝除測試。測量隨時間 變化之偏® ’而其結果示於表7。 、 [表7] _(單位： μπι) 類 起始 1小時 3小時 6小時 24小時 實例3 '—------ 5.83 5.84 5.88 _5^8 6 5.89 實例7 5.89 5.81 5.86 5.93 7.29 1 如表7所示，實例3之剝除劑組合物係比相較實例7具 有更佳之時間穩定性。 [實驗實例10] 實例3之剝除劑組合物係用於真正的τ f τ - L C D製作程 序中，由起使步驟至TFT完成，以獲致一 15 〇吋pVA與一 3.5对反射型DVC(數位錄影機）。實施EDS(electric die sorting電子晶粒排序）測試於產品上，而其結果顯示ι5 〇吋 PVA D VC與一 3.5吋反射型DVC係具有良好的電流-電壓 (I-V)特性。 [實例4與相較實例8] 對於使用實例3之剝除劑組合物製備之一銀反射層基板 係測量其反射性三次（實例4)。而對於使用傳統剝除劑組合 物（相較實例8)製備之銀-鈥反射層係測量其反射性二次。 (LCD 5 000 ; BaS04表面反射性=100%)。結果示於表8。 21 1258641 L 今、〇 J 分類 1----- 實例4 樣本編號 #1 #2 丨 ---—--- #3 反射性（％) 246 234 240 -— 1~ ___ ^ y 示，本發明（實例4)之剝除劑組合物所製備之 如表8所 基板比傳統銀-鈥基板具有較佳反射性（234至246%)。 如上所述’本發明用於光阻之剝除劑組合物當實施於 TFT-LCD製作程序時，係有效地縮減剝除時間。其係也因良 好剝除能力而無遺留雜質顆粒，且因硬烤與去灰製程的省略 而可簡化閘製程線進而降低成本。此外，當其實施於以銀（A g) 作為反射/半反半射層之一製程時，其係提供純銀層之剝除能 力與抗腐蝕性。 【圖式簡單說明】 第1 a圖顯示本發明用於光阻之剝除劑組合物，其施於一玻 璃基板之左上部份之一純銀反射層之電子顯微鏡照 片（x300) 〇 第lb圖顯示本發明用於光阻之剝除劑組合物，其施於一玻 璃基板之左下部份之一純銀反射層之電子顯微鏡照 片（x300) 〇 第1 c圖顯示本發明用於光阻之剝除劑組合物，其施於一玻 璃基板之中間部份之一純銀反射層之電子顯微鏡照 片（x300) 〇 第1 d圖顯示本發明用於光阻之剝除劑組合物，其施於一玻 22 1258641 璃基板之右上部份之一純銀反射層之電子顯微鏡照 片（x300)。 第1 e圖顯示本發明用於光阻之剝除劑組合物，其施於一玻 璃基板之右下部份之一純銀反射層之電子顯微鏡照 片（x300)。 第2圖顯示使用本發明用於光阻之剝除劑組合物之一 1 5.0〃 PVA DVC(數位錄影機）之EDS(I_V)特性。 第3圖顯示使用本發明用於光阻之剝除劑組合物之一 3.5 〃 反射型DVC(數位錄影機）之EDS(I-V)特性。 23Classification Example 3 Compared to Example 5 compared to Example 6 Compared to Example 7 Content MIPA1 - 10 - (10 (% by weight) MEA2 40 - 20 - NMP3 - 55 40 50 DMAc4 30 - - - carbitol 30 35 - 13 BDG5 - - 20 - DMS06 - - 20 - 1,1 - Tetrahydrogen pentylene - - - 20 TEG7 - - - 7 Silver release 10 minutes 61 3872 225 177 (ppb) 30 minutes 155 8793 876 352 24 hours 174 100 % 1 2983 1451 Number of substrates that can be processed 1500 500 100 0 (Note) 19 1258641 1. MIPA · monoisopropanolamine (mon〇is〇pr〇pan〇iarnine) 2. MEA · monoethanolamine 3·ΝΜΡ - N-methyltetrahydro said? N-methylpyrrolidone 4. DMAc: N,N-dimethylacetamide 5. BDG: butyldiglycol 6. DMS 0 : dimethylsulfoxide 7. TEG: triethylene glycol As shown in Table 6, the amount of silver released increased with time. In comparison with Example 5, silver was used for 24 hours. The latter 1 〇〇〇/〇 is released, and the excess is also released compared to the examples 6 and 7. In addition, the treated glass is compared to the example. The number of substrates was only 〇500 〇 [Experimental Example 8] A film photoresist having a thickness of 20,000 angstroms was formed by spin coating on a glass substrate having silver deposition, and the film was developed by exposure and etching silver. A specific pattern was obtained. The glass substrate was heated to 6 〇〇c and then peeled off by spraying the stripping agent composition of Example 3, and the glass substrate was washed with ultrapure water and observed by an electron microscope. The area of Experimental Example 3. No impurity particles were present and the stripping step was successfully completed. The bias values were 5·87 μιη, 5·89 μιη, 5.91 μιη, 5 83 叫, and 5 87 叫, respectively, and there was no Significant differences were produced. [Experimental Example 9] 20 1258641 Μ Example and the stripper composition of Example 7 were evaporated at intervals of 〇, i, 3, 6 and other temples and subjected to a stripping test. The variation with time is '' and the results are shown in Table 7. [Table 7] _ (Unit: μπι) Class Start 1 hour 3 hours 6 hours 24 hours Example 3 '------- 5.83 5.84 5.88 _5^8 6 5.89 Example 7 5.89 5.81 5.86 5.93 7.29 1 As shown in Table 7 Shown, the stripper composition of Examples 3 lines of time ratio better stability compared to Example 7. [Experimental Example 10] The stripper composition of Example 3 was used in a true τ f τ -LCD fabrication process from the start-up step to the TFT to obtain a 15 〇吋pVA and a 3.5-pair reflective DVC ( Digital video recorder). EDS (electric die sorting) was tested on the product, and the results showed that ι5 〇吋 PVA D VC and a 3.5 吋 reflective DVC system have good current-voltage (I-V) characteristics. [Example 4 and Comparative Example 8] A silver reflective layer substrate prepared by using the stripper composition of Example 3 was measured for its reflectance three times (Example 4). The reflectance was measured twice for the silver-rhenium reflective layer prepared using the conventional stripper composition (compared to Example 8). (LCD 5 000 ; BaS04 surface reflectivity = 100%). The results are shown in Table 8. 21 1258641 L Today, 〇J Classification 1----- Example 4 Sample No. #1 #2 丨------- #3 Reflectivity (%) 246 234 240 --1~ ___ ^ y Show, this The stripper composition of the invention (Example 4) prepared as shown in Table 8 had better reflectivity (234 to 246%) than the conventional silver-ruthenium substrate. As described above, the stripper composition for photoresist of the present invention is effective in reducing the stripping time when it is implemented in a TFT-LCD fabrication process. The system also removes the impurity particles due to the good stripping ability, and simplifies the gate process line and thus reduces the cost due to the omission of the hard bake and the ash removal process. Further, when it is carried out in the process of using silver (A g) as one of the reflection/half-reflective layers, it provides the stripping ability and corrosion resistance of the pure silver layer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1a is a photomicrograph (x300) of a pure silver reflective layer applied to a photoresist of the present invention for a photoresist stripping composition of the present invention. The electron micrograph (x300) of the pure silver reflective layer applied to the lower left part of a glass substrate of the present invention is shown in Fig. 1c, which shows the peeling of the photoresist for use in the present invention. An electron micrograph (x300) of a pure silver reflective layer applied to one of the intermediate portions of a glass substrate. FIG. 1D shows the stripping agent composition for photoresist of the present invention, which is applied to Glass 22 1258641 Electron micrograph (x300) of a pure silver reflective layer on the upper right part of the glass substrate. Fig. 1e shows an electron micrograph (x300) of a resistive stripping agent composition applied to a pure silver reflective layer on the lower right portion of a glass substrate. Fig. 2 shows the EDS (I_V) characteristics of a 5.0 〃 PVA DVC (digital video recorder) using the stripping agent composition for photoresist of the present invention. Fig. 3 shows the EDS (I-V) characteristics of a 3.5 〃 reflective DVC (digital video recorder) using the stripping agent composition for photoresist of the present invention. twenty three

Claims (1)

1258641 拾、申請專利範圍 1. 一種光阻之剝除劑組合物，該組合物至少包含： (a) 20 至 60 重量百分比之單乙醇胺 (monoethanolamine)； (b) 15至50重量百分比之N，N-二曱基乙醯胺 (N?N-dimethylacetamide)； (c) 15至50重量百分比之卡必醇（carbitol);及1258641 Pickup, Patent Application 1. A photoresist stripper composition comprising at least: (a) 20 to 60 weight percent monoethanolamine; (b) 15 to 50 weight percent N, N-N-dimethylacetamide; (c) 15 to 50% by weight of carbitol; (d) 0·1 至 10重量百分比之沒食子酸（gallic acid) ° 2.如申請專利範圍第1項所述之光阻之剝除劑組合物，該組 合物至少包含： (a) 35至45重量百分比之單乙醇胺； (b) 25至35重量百分比之N，N-二甲基乙醯胺； (c) 25至35重量百分比之卡必醇；及 (d) 1·5至2.5重量百分比之沒食子酸。(d) 0. 1 to 10% by weight of gallic acid. The photoresist composition according to claim 1, wherein the composition comprises at least: (a) 35 to 45 weight percent monoethanolamine; (b) 25 to 35 weight percent of N,N-dimethylacetamide; (c) 25 to 35 weight percent of carbitol; and (d) 1-5 to 2.5 weight percent gallic acid. 3. —種製備一半導體裝置之方法，該方法至少包含使用一剝 除劑組合物之一光阻剝除步驟，該剝除劑組合物至少包含2 0 至60重量百分比之單乙醇胺、15至50重量百分比之Ν，Ν-二曱基乙醯胺、15至50重量百分比之卡必醇、及0·1至10 重量百分比之沒食子酸。 4.如申請專利範圍第3項所述製備一半導體裝置之方法， 24 1258641 其中上述之半導體裝置係含有—銀反射層 所述製備一半導體裝置之方法，其 ArF、KrF、DUV、電子束（E-beam) 5·如申請專利範圍第3項 中該方法至少包含使用 或X-ray之一曝光步驟。 6·—種光阻之剝除劑組合物，該組合物至少包含·· (a) 20至60重量百分比之單乙醇胺； (b) 15至50重量百分比之ν，Ν-:甲基乙醯胺；· 及 (C) 15至50重量百分比之卡必醇（carbit〇1)。 7.如申請專利範圍第6項所述之光阻之剝除劑組合物該組 合物至少包含·· (a) 35至45重量百分比之單乙醇胺； (b) 25至35重量百分比之二甲基乙醢胺； 及 參 (c) 25至35重量百分比之卡必醇。 8· 一種製備-半導體裝置之方法，該方法至少包含使用一剝 除劑組合物之一光阻剝除步驟，該剝除劑組合物至少包含2〇 至6〇重量百分比之單乙醇胺、15至50重量百分比之N，N_ 一甲基乙醯胺、及15至50重量百分比之卡必醇。 9.如申請專利範圍第8項所述製備一半導體裝置之方法，其 25 1258641 中 10 中 上述之半導體裝置係含有一銀反射層。 .如申請專利範圍第8項所述製備一半導體裝置之方法，其 該方法至少包含使用ArF、KrF、DUV、電子束或X-ray之 曝光步驟。3. A method of preparing a semiconductor device, the method comprising at least one photoresist stripping step using a stripper composition, the stripper composition comprising at least 20 to 60 weight percent monoethanolamine, 15 to 50% by weight of cerium, lanthanum-dimercaptoacetamide, 15 to 50% by weight of carbitol, and 0.1 to 10% by weight of gallic acid. 4. A method of fabricating a semiconductor device according to claim 3, wherein the semiconductor device comprises a silver reflective layer, the method of preparing a semiconductor device, the ArF, KrF, DUV, electron beam ( E-beam) 5. The method of claim 3 includes at least one of the exposure steps of using or X-ray. 6. A photoresist stripping agent composition comprising at least (a) 20 to 60 weight percent monoethanolamine; (b) 15 to 50 weight percent ν, Ν-: methyl ethyl hydrazine Amine; · and (C) 15 to 50% by weight of carbitol (carbit〇1). 7. The photoresist stripper composition of claim 6, wherein the composition comprises at least (a) 35 to 45 weight percent monoethanolamine; (b) 25 to 35 weight percent dimethyl Ethylamine; and (c) 25 to 35 weight percent of carbitol. 8. A method of fabricating a semiconductor device, the method comprising at least one photoresist stripping step using a stripper composition comprising at least 2 to 6 weight percent monoethanolamine, 15 to 50% by weight of N,N_monomethylammoniumamine, and 15 to 50% by weight of carbitol. 9. The method of fabricating a semiconductor device according to claim 8, wherein the semiconductor device of 10, 12,586, 641, wherein the semiconductor device comprises a silver reflective layer. A method of fabricating a semiconductor device as described in claim 8, wherein the method comprises at least an exposure step using ArF, KrF, DUV, electron beam or X-ray. 2626