經濟部智慧財產局員工消費合作社印製 594425 A7 B7 五、發明説明（） 1 發明背景 發明領域 本發明爲關於光致抗蝕劑用剝離組成物及使用該組成 物之光致抗蝕劑之剝離方法。更詳言之，爲關於適合使用 於I C和L S I等半導體元件或液晶面板元件之製造，光 致抗蝕劑膜之剝離性優，且於高溫下之保存安定性優之光 致抗蝕劑用剝離組成物及使用該組成物之光致抗蝕劑之剝 離方法。 相關技術領域之說明 I C和L S I等半導體元件和液晶面板元件.，爲在基 板上經由澱積等所形成之透明導電膜等導電性金屬膜和 S i 〇2膜等絕緣膜上，均勻塗布光致抗蝕劑，並將其選擇 性地曝光、顯像處理，形成光致抗蝕圖樣，並以此圖樣作 爲掩蔽物，將上述導電性金屬膜和絕緣膜予以選擇性蝕刻 ，形成微細回路後，以剝離液除去不需要的光致抗蝕劑層 而製得。 除去此光致抗蝕劑層之剝離液，先前爲使用以烷基苯 磺酸作爲必須成分之有機磺酸系剝離液，及以單乙醇胺等 有機胺作爲必須成分之有機胺系剝離液。前者之有機磺酸 系剝離液，由於倂用毒性高之苯酚化合物和氯苯等之有機 溶劑，故作業性差，並且發生環境問題，加上具有易腐蝕 基板之導電性金屬膜等之缺點。相對地，後者之有機胺系 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）~— 一 -4- (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 594425 A7 B7 V. Description of the Invention (1) BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stripping composition for photoresist and the stripping of photoresist using the same. method. More specifically, for photoresists suitable for the manufacture of semiconductor elements such as ICs and LSIs, or liquid crystal panel elements, the photoresist film has excellent peelability and excellent storage stability at high temperatures. Stripping composition and method for stripping photoresist using the same. Description of the Related Technical Field Semiconductor devices such as ICs and LSIs and liquid crystal panel devices are uniformly coated with light on a conductive metal film such as a transparent conductive film formed by deposition, etc., and an insulating film such as a Si 02 film on a substrate. The resist is selectively exposed and developed to form a photoresist pattern, and the pattern is used as a mask to selectively etch the conductive metal film and the insulating film to form a fine circuit It is prepared by removing unnecessary photoresist layer with a stripping solution. The stripping liquid for removing the photoresist layer has previously been an organic sulfonic acid-based stripping liquid containing an alkylbenzenesulfonic acid as an essential component, and an organic amine-based stripping liquid containing an organic amine such as monoethanolamine as an essential component. The former organic sulfonic acid-based stripping solution uses organic solvents such as phenol compounds and chlorobenzene, which are highly toxic, resulting in poor workability, environmental problems, and the disadvantages of conductive metal films that easily corrode the substrate. In contrast, the latter organic amines are applicable to Chinese National Standard (CNS) A4 specifications (210X297 mm) ~~ 1-4 (Please read the precautions on the back before filling this page)
經濟部智慧財產馬員工消費合阼fi印裂 594425 A7 _B7 _ 五、發明説明（） 2 剝離液爲比有機磺酸系剝離液之毒性低，且在廢液處理中 不需要煩雜之處理，又因對於含A 1和C u等基板之防腐 鈾效果優，故於今日廣被使用。 有機胺系剝離液處理爲採用處理溫度爲較高溫、例如 將剝離液槽中之剝離液於6 0〜8 0 °C左右加熱，並令基 板於此加溫之剝離液中浸漬，進行剝離處理之浸漬法，及 將在上述溫度加溫之剝離液吹附至基板上之噴淋法等。於 此類剝離處理中，即使將剝離液長期保持於6 0〜8 0 °C 之高溫狀態中，亦會損害其特性（剝離性、防蝕性）。特 別地，於液晶面板元件等中所利用之大型玻璃基板，比最 大直徑3 0 Omm之半導體集成回路用基板，乃使用例如 36〇mmx46〇mm, 550mmx6 50mm. 6 0 Ommx 7 2 0mm等頗爲大型之基板。因此剝離液 槽亦比例於基板之大小變成大型，故剝離液易蒸發，且其 組成易變化。 先前，光致抗蝕劑用剝離液組成物可列舉例如由烷醇 胺類、烷氧基烷胺類或烷氧基烷醇胺類、二元醇單烷基醚 、糖或糖醇類、及水所組成物的光致抗蝕劑剝離劑組成物 (特開平8 — 190205號公報）；由烷醇胺類、烷氧 基烷胺類或烷氧基烷醇胺類、醯胺類、糖或糖醇類、及水 所組成之光致抗蝕劑剝離劑組成物（特開平 8 - 202051號公報）；由烷醇胺類、烷氧基烷胺類 或烷氧基烷醇胺類、二元醇單烷基醚、糖或糖醇類、四級 銨氫氧化物、及所組成之光致抗蝕劑剝離劑組成物（特開 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁)Ministry of Economic Affairs, Intellectual Property, Employee Consumption, Fi Filtration, 594425 A7 _B7 _ V. Description of the Invention (2) The stripping solution is less toxic than the organic sulfonic acid-based stripping solution, and does not require complicated treatment in waste liquid treatment. It is widely used today because of its excellent anticorrosive uranium content on substrates including A 1 and Cu. The organic amine-based peeling liquid is treated at a relatively high temperature. For example, the peeling liquid in the peeling liquid tank is heated at about 60 to 80 ° C, and the substrate is dipped in the heated peeling liquid to perform the peeling treatment. A dipping method, and a spray method in which a peeling liquid heated at the above temperature is blown onto a substrate. In this kind of peeling treatment, even if the peeling liquid is kept at a high temperature of 60 to 80 ° C for a long time, its characteristics (peelability, corrosion resistance) are impaired. In particular, the large glass substrates used in liquid crystal panel elements and the like are larger than semiconductor substrates for semiconductor integrated circuits with a maximum diameter of 30 mm. For example, 36 mm × 46 mm, 550 mm × 6 50 mm. 6 0 mm × 7 2 0 mm, etc. Large substrate. Therefore, the stripping liquid tank also becomes large in proportion to the size of the substrate, so the stripping liquid is easy to evaporate, and its composition is easy to change. Heretofore, examples of the composition for a stripping solution for photoresist include alkanolamines, alkoxyalkamines or alkoxyalkanolamines, glycol monoalkyl ethers, sugars or sugar alcohols, Photoresist stripper composition composed of water and water (Japanese Patent Application Laid-Open No. 8-190205); alkanolamines, alkoxyalkamines or alkoxyalkanolamines, amidines, Photoresist stripper composition composed of sugar or sugar alcohol and water (Japanese Patent Application Laid-Open No. 8-202051); composed of alkanolamines, alkoxyalkamines, or alkoxyalkanolamines , Glycol monoalkyl ethers, sugars or sugar alcohols, quaternary ammonium hydroxide, and the photoresist stripper composition (the paper format of the special edition applies Chinese National Standard (CNS) A4 specifications (210 × 297 mm) (Please read the notes on the back before filling this page)
-5- 594425 A7 B7 五、發明説明（） 3 平8 - 262746號公報）：由烷醇胺類、烷氧基胺類 或烷氧基烷醇胺類、羥基胺類、糖或糖醇類、界面活性劑 、及水所組成之光致抗蝕劑剝離劑組成物（特開平 9一54442號公報）；由烷醇胺類、二甘醇單烷基醚 、糖或糖醇類、N，N —二乙基羥基胺、及水所組成之光 致抗蝕劑用剝離液組成物（特開平9 — 1 5 2 7 2 1號公 報）；由p K a爲7 · 5〜1 3之胺類、羥基胺類、水溶 性有機溶劑、防蝕劑、及水所組成之光致抗蝕劑用剝離液 組成物（特開平9 一 9 6 9 1 1號公報）等。 但是，上述各公報中記載之組成物，主要均爲將基板 之蝕刻後進行等離子體拋光處理時所產生之光致抗蝕劑變 質膜及金屬澱積物等殘渣物予以剝離爲其目的。， 上述各公報記載之組成物中，特開平 8 - 190205號公報、特開平8 - 202051號公 報、特開平8 - 2 6 2 7 4 6號公報、特開平 9 一 9 6 9 1 1號公報中記載之組成物，雖對於拋光處理 後之光致抗蝕劑變質膜顯示出大約可令人滿足的剝離性， 但對於未施以拋光處理且未變質之光致抗蝕劑膜之剝離性 ，則尙未到達可產生令人充分滿足程度之效果。 特開平9 — 54442號公報、特開平 9 一 1 5 2 7 2 1號公報中記載之組成物，若水分過多則 腐蝕基板之可能性變高，另一方面’，若水分過少則引火點 變低，且恐令作業上之危險變大。再者，因爲水爲糖或糖 醇類溶解之唯一的成分，故水分少時，或者於即使爲適當 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 線 -6 - 594425 A7 B7 五、發明説明（） 5 以剝離。 發明之詳細說明 以下，詳述本發明之光致抗蝕劑用剝離液組成物。 (a )成分之烷醇胺類，具體而言可列舉例如單乙醇 胺、二乙醇胺、三乙醇胺、乙胺基乙醇、二甲胺基乙醇、 二乙胺基乙醇、2 —（2 —胺基乙氧基）乙醇等，其中以 單乙醇胺、2 —（2 —胺基乙氧基）乙醇爲適合使用。其 可單獨、或組合二種以上供使用亦可。 本發明剝離液組成物中，（a )成分配合量之上限以 4 0重量％爲佳，且特別以3 0重量％爲佳。又，下限以 5重量％爲佳，且特別以1 0重量％爲佳。 (b)成分之N，N —二乙基羥基胺爲以 N (C2H5) 2〇H表示之化合物。 本發明剝離液組成物中，（b )成分配合量之上限以 3 0重量％爲佳，且特別以2 0重量％爲佳。又，下限以 5重量％爲佳，且特別以1 0重量％爲佳。 (c )成分之糖類可使用一般以Cn (H2〇）m所表 示之糖，及令此些糖之羰基還原所得之糖醇等，具體可列 舉D -山梨糖醇、阿糖醇、甘露糖醇、木糖醇、蔗糖、澱 粉等，其中以木糖醇、D -山梨糖醇爲佳。其可單獨使用 ，或組合使用2種以上亦可。 本發明剝離液組成物中，（c )成分配合量之上限以 3 0重量％爲佳，且特別以2 5重量％爲佳。又，下限以 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) 一 ' -8- I 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) 594425 A7 B7 經濟部智慧財產局員工消費合作社印製 五、 發明説明 ( 7 ) 1 1 1 ( I ) 基 板 上 設置光 致 抗 蝕 劑 層 之 工 程 ， 1 1 I ( I I ) 令 該 光致抗 蝕 劑 層 選 擇 性 曝 光 之 工 程 5 1 I ( I I I ) 令 曝光後 之 光 致 抗 鈾 劑 層 顯 像 設 置 光 致 抗 請 先 1 1 蝕 劑 圖 樣 之 工 程 閲 讀 背 1 1 ( I V ) 以 該 光致抗 蝕 劑圖 樣 作 爲 掩 蔽 物令 該 基 板 蝕 面 之 注 1 1 刻 之 工 程 及 1 項 1 I ( V ) 將 飩 刻 工程後 之光 致 抗 蝕 劑 圖 樣 由 基 板 剝 離 之 再 填 祖 1 % 太 裝 工 程所 構 成 之光致抗蝕劑 剝 離 方 法 中 ’ 使用 上 述光 致 抗 蝕 个 頁 1 劑 用 剝 離 液 組成 物 ，將蝕 刻 工 程 後 之光 致 抗 蝕 劑 ΠαΤ IMJ 樣 予 以 1 1 剝 離 〇 1 I 基 板 可列 舉 例如形成 金 屬 層 之 基 板 等 〇 金 屬 層 可 舉 出 1 訂 鋁 ( A 1 ) : 鋁 — 矽（A 1 一 S i ) % 鋁 — 銅 ( A 1 — 1 C U ) % 鋁 — 矽 一 銅（A 1 — S i — C U ) 等 之 鋁 合 金 ( 1 1 A 1 合金 ) f 鈦 ( T i ) ; — 氮 化 鈦 ( T i N ) 鎢 化 鈦 1 1 ( T i W ) 等 之 鈦 合金（ T i 合 金 ) 但並非 限 定於此 〇 1 線 1 I 塗 布 \ 乾 燥 曝光、 顯 像 及 蝕 刻 處 理 均 爲 慣 用 之手 段 j 並 4nc, 1ΙΓΠ j\\\ 特別 限 定 。蝕刻 雖 可使用 濕 式 飩 刻 乾式 蝕 刻任 1 1 何 —* 種 但本 發 明 剝離液 組 成物特別 適 合使 用 乾 式 蝕 刻 後 1 1 之光致 蝕 刻 劑 膜 之 剝離。 特別 對 於 液 晶 面 板元件 等 中 所使 1 1 用 之玻 璃 基 板 上 較佳使 用 磷 酸 硝 酸 醋 酸 等 酸 性 蝕 刻 1 | 液 作 爲 触 刻 液 ( 蝕 刻劑） 〇 1 I 尙 ， 於 上 述 ( I I I ) 之 顯 像 X 程 ( V ) 之 剝 離 工 1 1 I 程 後 亦 可 施 以 慣 用施行 之使 用 純 水和低 級 醇 ( 例如 乙 醇 1 1 等 ) 等 之 漂 洗 處 理 及乾燥 處 理 〇 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-5- 594425 A7 B7 V. Explanation of the invention () 3 Hei 8-262746): from alkanolamines, alkoxyamines or alkoxyalkanolamines, hydroxylamines, sugars or sugar alcohols Photoresist stripper composition consisting of surfactant, surfactant, and water (Japanese Patent Application Laid-Open No. 9-54442); composed of alkanolamines, diethylene glycol monoalkyl ethers, sugars or sugar alcohols, N , N-diethylhydroxylamine and water-containing photoresist stripping liquid composition (Japanese Patent Laid-Open Publication No. 9-1 5 2 7 2 1); p K a is 7 · 5 ~ 1 3 A stripping liquid composition for photoresist composed of amines, hydroxylamines, water-soluble organic solvents, corrosion inhibitors, and water (Japanese Laid-Open Patent Publication No. 9-9691). However, the compositions described in the above-mentioned publications are mainly for the purpose of peeling off residues such as a photoresist modified film and metal deposits generated when a substrate is subjected to plasma polishing after etching. Among the compositions described in the above-mentioned publications, JP-A-8-190205, JP-A-8-202051, JP-A-8- 2 6 2 7 4 6 and JP-A-9-9 6 9 1 1 Although the composition described in the above shows approximately satisfactory peelability for a photoresist-modified film after polishing, the peelability for a photoresist film that has not been polished and is not deteriorated. , Then 尙 does not reach can produce a fully satisfying effect. The composition described in JP-A-9-54442 and JP-A-9-1521-51 is more likely to corrode the substrate if there is too much moisture, and if the moisture is too little, the ignition point will change. Low, and the danger in operation may increase. Furthermore, because water is the only component that dissolves sugars or sugar alcohols, when the water content is low, or even if the paper size is appropriate, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied (please read the back Note for this page, please fill in this page again) Binding · Thread -6-594425 A7 B7 V. Description of the invention () 5 To peel off. DETAILED DESCRIPTION OF THE INVENTION Hereinafter, the stripping liquid composition for a photoresist of the present invention will be described in detail. (a) The alkanolamines of the component include, for example, monoethanolamine, diethanolamine, triethanolamine, ethylaminoethanol, dimethylaminoethanol, diethylaminoethanol, 2- (2-aminoethyl) Among them, monoethanolamine and 2- (2-aminoethoxy) ethanol are suitable for use. They can be used alone or in combination of two or more kinds. In the peeling liquid composition of the present invention, the upper limit of the compounding amount of the component (a) is preferably 40% by weight, and particularly preferably 30% by weight. The lower limit is preferably 5% by weight, and particularly preferably 10% by weight. (b) Component N, N-diethylhydroxylamine is a compound represented by N (C2H5) 20H. In the peeling liquid composition of the present invention, the upper limit of the compounding amount of the component (b) is preferably 30% by weight, and particularly preferably 20% by weight. The lower limit is preferably 5% by weight, and particularly preferably 10% by weight. (c) As the sugars of the components, sugars generally represented by Cn (H2O) m and sugar alcohols obtained by reducing the carbonyl group of these sugars can be used. Specific examples include D-sorbitol, arabitol, and mannose. Alcohol, xylitol, sucrose, starch and the like are preferred among them xylitol and D-sorbitol. They can be used alone or in combination of two or more. In the peeling liquid composition of the present invention, the upper limit of the compounding amount of the component (c) is preferably 30% by weight, and particularly preferably 25% by weight. In addition, the lower limit applies the Chinese National Standard (CNS) A4 specification (210X297 mm) to this paper size. A '-8- I binding line (please read the precautions on the back before filling this page) 594425 A7 B7 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative V. Description of the invention (7) 1 1 1 (I) Project of placing a photoresist layer on the substrate, 1 1 I (II) Project of selectively exposing the photoresist layer 5 1 I (III) Set the photoresistance of the photoresistive uranium resist layer after exposure. Set the photoresistance first 1 1 Engineering reading of the resist pattern 1 1 (IV) Use the photoresist pattern as a mask to make the Note on substrate etched surface 1 1 engraving process and 1 item 1 I (V) Photoresist pattern after engraving process is peeled off from the substrate and then refilled 1% Photoresist formed by the glazing process Stripping method 'using the above-mentioned photoresist sheet 1 agent for stripping After the etching process, the photoresist ΠαΤ IMJ sample after the etching process is peeled off. 1 The substrate can be exemplified by a substrate forming a metal layer. The metal layer can be exemplified by aluminum. (A 1): Aluminum— Silicon (A 1-S i)% Aluminum-Copper (A 1-1 CU)% Aluminum-Silicon-Copper (A 1-S i-CU) and other aluminum alloys (1 1 A 1 alloy) f Titanium (T i ); — Titanium Nitride (T i N) Titanium Tungsten 1 1 (T i W) and other titanium alloys (T i alloys), but not limited to this 〇1 Line 1 I Coating \ Dry exposure, development and etching All are the usual means j and 4nc, 1ΙΓΠ j \\\ are particularly limited. Although it is possible to use wet etch dry etching to etch any of 1 1— * species, the composition of the stripping solution of the present invention is particularly suitable for stripping of 1 1 photoresist film after dry etching. Especially for glass substrates used in liquid crystal panel elements and the like, it is preferable to use an acidic etching 1 | solution such as phosphoric acid, nitric acid, and acetic acid as the etching solution (etching agent) 〇1 I 尙, in the development image (III) above X The stripper of the process (V) 1 1 I After the process, the conventionally used rinsing treatment and drying treatment using pure water and lower alcohols (such as ethanol 1 1 etc.) can be applied. 0 1 1 This paper size applies to Chinese national standards ( CNS) A4 size (210X297 mm)
-10- 594425 A7 B7 五、發明説明（） 8 (請先閲讀背面之注意事項再填寫本頁) 通常以浸漬法、噴淋法進行剝離處理。剝離時間若爲 可令剝離充分之時間即可，並無特別限定。尙，此時之剝 離液溫度，於使用本發明剝離液組成物之剝離方法中，即 使以6 0〜8 0 °C之高溫亦對於金屬膜之防腐飩效果高， 且特別對於未變質之光致抗蝕劑膜之剝離性優。本發明剝 離液組成物即使於6 0〜8 0 °C之高溫下亦爲保存安定性 優，且組成無變化，並且因爲可循環使用，故可達到令製 造費用降低化之效果。 實施例 其次，依據實施例更詳細說明本發明，但本發明不被 此些例所侷限。 實施例1〜6、比較例1〜7 經濟部智慧財產局員工消費合作社印製 於矽乾膠片上形成A 1配線之基板上，將萘醌重氮化 合物及酚醛淸漆樹脂所組成之正型光致抗蝕劑Τ Η M R -iP3300 (東京應化工業（株）製）以自旋器進行塗 布，並於9 0 °C中施以9 0秒鐘預烘烤，形成膜厚2 . 0 // m之光致抗蝕劑層。將此光致抗蝕劑層，使用N S R -2005 i 1 oD (理光股份有限公司製），透過掩蔽物 圖樣進行曝光，並以2 · 3 8重量％氫氧化四甲銨（ T M A Η )水溶液顯像，形成光致抗蝕劑P樣。其次於 1 2 0 °C下，進行9 0秒鐘後烘烤（P〇st-bake )。 〔光致抗蝕劑膜之剝離性試驗〕 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - 經濟部智慧財產局員工消費合作社印製 594425 A7 B7 五、發明説明（） 9 其次，將上述條件形成之具有光致抗蝕劑圖樣之矽乾 膠片，以磷酸、硝酸、醋酸混酸系飩刻劑進行濕式飩刻處 理，其後，以純水予以洗淨。 對於完成上述處理之基板，將表1所示之各組成的剝 離液組成物（保持於6 0 °C )以噴淋法吹附其上，分別進 行光致抗蝕劑膜剝離處理。將剝離處理後之基板以純水充 分漂洗，並以S EM (掃描型電子顯微鏡）照片之觀察， 評價此時之光致抗蝕劑膜的剝離性。結果示於表2。 尙，剝離液之狀態爲如下評價。 A :即使經過4 8小時以上於溶液中亦未察見變化 B :經過1 2小時則溶液分離成二層 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)-10- 594425 A7 B7 V. Description of the invention () 8 (Please read the precautions on the back before filling in this page) The peeling treatment is usually performed by dipping or spraying. The peeling time is not particularly limited as long as the peeling time is sufficient. Alas, the temperature of the peeling liquid at this time, in the peeling method using the peeling liquid composition of the present invention, even at a high temperature of 60 to 80 ° C, it has a high anticorrosive effect on the metal film, and it is particularly suitable for undeteriorated light The resist film has excellent peelability. The stripping liquid composition of the present invention is excellent in storage stability even at a high temperature of 60 to 80 ° C, has no change in composition, and is recyclable, so that the manufacturing cost can be reduced. Examples Next, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples. Examples 1 to 6, Comparative Examples 1 to 7 Employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed on a silicon wafer to form A 1 wiring on a substrate, and a positive type composed of naphthoquinone diazonium compound and phenolic lacquer resin The photoresist T Η MR-iP3300 (manufactured by Tokyo Ind. Co., Ltd.) was coated with a spinner and pre-baked at 90 ° C for 90 seconds to form a film thickness of 2.0. // m of photoresist layer. This photoresist layer was exposed through a mask pattern using NSR-2005 i 1 oD (manufactured by Ricoh Co., Ltd.), and was developed with a 2.38% by weight tetramethylammonium hydroxide (TMAΗ) aqueous solution. The photoresist P is formed. Secondly, it was baked at 120 ° C for 90 seconds (Post-bake). [Peel test of photoresist film] This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) -11-Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 594425 A7 B7 V. Description of the invention ( 9) Next, the silicon wafer with a photoresist pattern formed under the above conditions was wet-etched with a phosphoric acid, nitric acid, and acetic acid mixed etching agent, and then washed with pure water. For the substrate on which the above processing was completed, a stripping liquid composition of each composition shown in Table 1 (maintained at 60 ° C) was spray-blown on it, and the photoresist film stripping treatment was performed separately. The substrate after the peeling treatment was sufficiently rinsed with pure water, and observed by a S EM (scanning electron microscope) photograph, and the peelability of the photoresist film at this time was evaluated. The results are shown in Table 2. Alas, the state of the peeling liquid was evaluated as follows. A: No change was observed in the solution even after 48 hours or more. B: After 12 hours, the solution was separated into two layers. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the back first) (Notes to fill out this page)
12 - 594425 A7 B7 五、發明説明（） 12 若依據如上詳述之本發明，則可提供光致抗蝕劑層之 剝離性優，且高溫下之保存安定性優之光致抗蝕劑用剝離 液組成物及使用該組成物之光致抗蝕劑之剝離方法。本發 明爲特別適合使用於液晶面板元件製造中所用之大型基板 上所形成之光致抗蝕劑層的剝離。依據本發明，可取得即 使於高溫下之剝離處理中亦不會令剝離液之組成變化，且 可循環使用剝離液，令製造費用降低化等之效果。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（/fcNS ) A4規格（210X297公釐） -15-12-594425 A7 B7 V. Description of the invention (12) According to the present invention as detailed above, a photoresist with excellent peelability of the photoresist layer and excellent storage stability at high temperature can be provided. Stripping liquid composition and method for stripping photoresist using the same. The present invention is particularly suitable for peeling a photoresist layer formed on a large substrate used in the manufacture of a liquid crystal panel element. According to the present invention, it is possible to obtain effects such that the composition of the peeling liquid does not change even in a peeling treatment at a high temperature, and the peeling liquid can be recycled, thereby reducing manufacturing costs and the like. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies the Chinese national standard (/ fcNS) A4 specification (210X297 mm) -15-