TWI254461B - Package structure of photosensitive chip - Google Patents

Package structure of photosensitive chip Download PDF

Info

Publication number
TWI254461B
TWI254461B TW94118320A TW94118320A TWI254461B TW I254461 B TWI254461 B TW I254461B TW 94118320 A TW94118320 A TW 94118320A TW 94118320 A TW94118320 A TW 94118320A TW I254461 B TWI254461 B TW I254461B
Authority
TW
Taiwan
Prior art keywords
light
sensing wafer
photo
layer
protective layer
Prior art date
Application number
TW94118320A
Other languages
Chinese (zh)
Other versions
TW200644260A (en
Inventor
Bo-Hung Chen
Jin-Cheng Luo
Mau-Rung Chen
Original Assignee
Sigurd Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sigurd Microelectronics Corp filed Critical Sigurd Microelectronics Corp
Priority to TW94118320A priority Critical patent/TWI254461B/en
Application granted granted Critical
Publication of TWI254461B publication Critical patent/TWI254461B/en
Publication of TW200644260A publication Critical patent/TW200644260A/en

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)

Abstract

This invention provides a package structure of photosensitive chip. The protective layer and photosensitive chip are separated with a distance in the chamber of a forming frame. It prevents the photosensitive chip from bearing the pressure of the protective layer. The protective layer may damage the reliability between the solder pads and the metallization traces. When the protective layer is placed into the forming frame, and improves the drawback in that glue material may flow into the photosensitive area of the photosensitive chip through the gap between the solder pads on the photosensitive chip in the conventional skill. Therefore, it increases the yield rate and reduces the height of the whole package structure. Eventually, it achieves the purpose of light and thin.

Description

1254461 五、發明說明(1) 【發明所屬之技術領域】 • 本發明係有關一種光感測晶片的封裝結構,特別是關 、&一種可提高良率之光感測晶片的封裝結構。 、【先前技術】 傳統的光感測晶片封合結構如第1圖所示,由金屬片 1 2構成封裝上與光感測晶片1 8的電性連結;一個成形體 (Forming Frame)10形成一腔體,並包覆金屬片12,其提 供一透光開口(Open Window) 14以通透光源;一透光層16 _覆蓋於成形體1 0的透光開口丨4上;光感測晶片1 8以覆晶方 式放置於成形體10所形成的腔體中,並用以電性連接至金 屬片12上;膠體20封膠於成形體1〇所形成的腔體中並包覆 光感測晶片1 8。 本國專利公告號549 5 98中便提出一種同上述封合方式 的 光感測器改良構造」,其因將光感測晶片1 8以覆晶方 式放置於成形體1 〇所形成的腔體中,因此可降低整個封袭 體的南度’而達到輕薄短小的訴求。 然習知之封裝方式有一主要的封合缺點,由於光感測 •晶片1 8係以覆晶方式放置於成形體1 0所形成的腔體中,並 用以電性連接至金屬片i 2上,其光感測晶片1 8上的焊塾 (Pad)22之間會有間隙,又由於光感測晶片18上的焊塾22 與光感測區24之間的距離很近,因此在做填膠製程時,膠 體20會由光感測晶片丨8上焊墊22之間的間隙流到光感剛二 〜片18的光感測區24上,形成一不易清洗(cleaning)的雜:1254461 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a package structure of a photo-sensing wafer, and more particularly to a package structure of a photo-sensing wafer capable of improving yield. [Prior Art] As shown in FIG. 1 , the conventional photo-sensing wafer sealing structure is composed of a metal piece 12 to form an electrical connection with the photo-sensing wafer 18; a forming frame 10 is formed. a cavity, and covering the metal sheet 12, which provides an open window 14 to pass through the light source; a light transmissive layer 16 _ over the transparent opening 丨4 of the formed body 10; light sensing The wafer 18 is placed in a cavity formed by the molded body 10 in a flip chip manner, and is electrically connected to the metal sheet 12; the colloid 20 is sealed in the cavity formed by the molded body 1 and coated with a light sensation. Test the wafer 18. Japanese Patent Publication No. 549 5 98 proposes an improved structure of the photosensor of the above-described sealing method, in which the photo-sensing wafer 18 is placed in a cavity formed by the molded body 1 in a flip chip manner. Therefore, the south degree of the entire enclosure can be lowered to achieve a light and short appeal. However, the conventional packaging method has a major sealing disadvantage, since the light sensing/wafer 18 is placed in a cavity formed by the formed body 10 in a flip chip manner, and is electrically connected to the metal piece i 2 , There is a gap between the pads 22 on the photo-sensing wafer 18, and because the distance between the pad 22 on the photo-sensing wafer 18 and the photo-sensing area 24 is very close, During the glue process, the colloid 20 will flow from the gap between the pads 22 on the photo-sensing wafer 8 to the light-sensing area 24 of the light-sensing film 2 to form a cleaning that is not easy to clean:

12544611254461

來源(Part icle source) ’從而影響製程良率 yield)與品質(quality) 有鑑於此,本發明係針對卜 |耵上述之困擾,提出一種光 測晶片的封裝結構,以改善上述之缺失 【發明内容】 本發明之主要目的,係在提供一種光感測晶片的封裝 結構,其使得保護層與光感測晶片相隔一間距,以避免保 濩層放入成形體時’光感測晶片會承受到保護層的壓力, •而造成知塾與金屬佈線間的可靠度損毀,並可避免以往製 程中膠體(Glue material)掉至光感測晶片的感測區域 (image sensing area),以免形成一不易清洗的外來雜質 (not easy cleaning & un~wanted particle source) ^ 從而提高良率與品質,提供一個改進製程良率(pr〇cess y i e 1 d )的可行性。 本發明之另一目的,係在提供一種光感測晶片的封裝 結構,其係提供一光穿透至光感測晶片的機制,並保護光 感測晶片不受外部微粒(P a r t i c 1 e )的污染。 φ 本發明之再一目的,係在提供一種光感測晶片的封裝 結構,其係利用覆晶方式設置光感測晶片於成形體之腔體 内,可降低整個封裝體之高度,而達輕薄。 為達到上述之目的,本發明係提出一種光感測晶片的 -封裝結構,包括一個成形體,其係具一腔體,成形體開設 、有一透光開口以可通透光源,且在腔體内設置有一光感測In view of the above, the present invention is directed to a package structure of a photo-measuring wafer to improve the above-mentioned defects [invention] The main purpose of the present invention is to provide a package structure of a light sensing wafer, which is such that the protective layer is spaced apart from the light sensing wafer to prevent the light sensing wafer from being received when the protective layer is placed in the molded body. The pressure to the protective layer, and the reliability of the knowledge and metal wiring is damaged, and the gel sensing material in the past process can be prevented from falling to the image sensing area of the photo-sensing wafer, so as to avoid forming a Not easy cleaning & un~wanted particle source ^ improves yield and quality, and provides a possibility to improve process yield (pr〇cess yie 1 d ). Another object of the present invention is to provide a package structure for a light sensing wafer that provides a mechanism for light to penetrate to a light sensing wafer and protects the light sensing wafer from external particles (P artic 1 e ) Pollution. φ Another object of the present invention is to provide a package structure for a photo-sensing wafer, which uses a flip-chip method to dispose a photo-sensing wafer in a cavity of a molded body, thereby reducing the height of the entire package, and being thin and light. . In order to achieve the above object, the present invention provides a light-sensing wafer-package structure comprising a formed body having a cavity, a formed body, a light-transmissive opening for transmitting a light source, and a cavity Light sensing

第6頁 1254461 五、發明說明(3) 晶片’其為覆晶接合方式’且在光感測晶片上具有數個_ 塾’而在腔體内及光感測晶片下設置有一保護層,曰保士芰 係與光感測晶片相隔一間距,並有數個金屬佈線 (Matallization Traces)與焊墊形成電性連接,且延伸至 .成形體表面,以及在成形體的透光開口上設置有一透光 層。 底下藉由具體實施例配合所附的圖式詳加說明,當更 容易瞭解本發明的目的、技術内容、特點及其所達成的功 效。Page 6 1254461 5, the invention description (3) The wafer 'which is a flip chip bonding method' and has several _ 塾 ' on the light sensing wafer and a protective layer under the cavity and the light sensing wafer, 曰The bondage system is spaced apart from the photo-sensing wafer, and has a plurality of metal wirings (Matallization Traces) electrically connected to the bonding pads, and extends to the surface of the forming body, and a transparent surface is provided on the transparent opening of the forming body. Light layer. The objects, technical features, features, and effects achieved by the present invention will become more apparent from the detailed description of the embodiments and the accompanying drawings.

I 【實施方式】 本發明提出一種光感測晶片的封裝結構,其結構剖視 圖如第2圖所示,光感測晶片的封裝結構3包括一個成形體 30,其係具一腔體,成形體30開設有一透光開口 32以通透 光源,在腔體内具有二突出部34,且腔體内設置有一光感 測晶片3 6,其係為覆晶接合方式,且在光感測晶片3 6上利 用打線(Wire Bonding)的方式形成金屬球,以使形成數個 銲墊3 8,而在腔體内且位於光感測晶片3 6、突出部3 4下設 g置有一保護層40,當保護層40壓合成形體3〇時,突出部34 可避免光感測晶片3 6受到保護層4 0的壓力,並有複數個金 屬佈線4 2與焊墊3 8利用超音波共振接合方式形成電性連 接,金屬佈線42可以為金屬花架所成形之金屬片或是用電 鍍化金的方式成形於成形體30表面,金屬佈線42並延伸至 成形體30兩側表面,且在成形體30的透光開口 32覆蓋有一[Embodiment] The present invention provides a package structure of a photo-sensing wafer, the cross-sectional view of which is shown in FIG. 2, and the package structure 3 of the photo-sensing wafer includes a molded body 30 which is provided with a cavity and a molded body. 30 is provided with a light-transmissive opening 32 for transmitting a light source, having two protruding portions 34 in the cavity, and a light sensing wafer 3 6 is disposed in the cavity, which is a flip chip bonding manner, and the light sensing chip 3 is 6 is formed by wire bonding (Wire Bonding) to form a plurality of pads 3 8 and a protective layer 40 is disposed in the cavity and under the photo-sensing wafer 36 and the protrusions 34. When the protective layer 40 is pressed into the composite body 3, the protruding portion 34 can prevent the light sensing wafer 36 from being subjected to the pressure of the protective layer 40, and the plurality of metal wirings 4 2 and the bonding pads 38 are ultrasonically coupled by means of ultrasonic resonance. The electrical connection is formed, and the metal wiring 42 may be a metal piece formed by a metal flower stand or formed on the surface of the molded body 30 by electroplating gold, and the metal wiring 42 is extended to both side surfaces of the molded body 30, and the molded body 30 is formed. The light transmissive opening 32 is covered with a

第7頁 1254461 五、發明說明(4) 透光層44 ’如玻璃,以及有一膠體層46位在成形體3〇及上 蓋透光層4 4間。 其中’成形體30具有二凸塊48,且在每一凸塊48上開 設有一凹槽50,以使膠體層46溢至凹槽50内以保護光感測 晶片36不受污染;且有一封膠層52設置成形體3〇及保護層 4 0之接合處下,以保護光感測晶片3 6,且在保護層4 〇及光 感測晶片36間設置有一金屬層54以散熱,而在金屬層54設 有一散熱層56,如銀膠(Ag Epoxy Glue),亦同樣為散熱 作用’且金屬層54與保護層40係為一體成型;另外,透光 φ# 4 4還可過濾特定的光波長範圍之光源,如遠紅外線。 另外,金屬佈線42除了如第2圖所示可延伸至成形體 3 0兩側表面之外,亦可如第3圖所示,可延伸至成形體3 〇 之底部的表面上,且不論金屬佈線42延伸至成形體30的底 部或兩側,金屬佈線42皆用以連接至一電路板,如印刷電 路板或軟板,且金屬佈線42是利用表面安裝法連接至電路 板。 而且,如第4圖所示,封膠層52除了設置在成形體3〇 及保護層4 0之接合處下之外,也可填充在保護層4 0兩側及 成形體3 0間,以保護光感測晶片3 6。 _ 本發明提出一種光感測晶片的封裝結構,其係使保護 層與光感測晶片間形成一間距,例如在成形體的腔體内成 形至少一個的突出部,以避免保護層放入成形體時,光感 測晶片會承受到保護層的壓力,而造成焊墊與金屬佈線間 的可靠度損毀,可避免以往製程中膠體掉至光感測晶片的Page 7 1254461 V. INSTRUCTION DESCRIPTION (4) The light transmissive layer 44' is, for example, glass, and has a colloid layer 46 between the formed body 3'' and the upper cover light-transmitting layer 44. Wherein the shaped body 30 has two bumps 48, and a recess 50 is formed in each of the bumps 48 to allow the colloid layer 46 to overflow into the recess 50 to protect the photo-sensing wafer 36 from contamination; The adhesive layer 52 is disposed under the joint of the molded body 3 and the protective layer 40 to protect the light sensing wafer 3 6 and a metal layer 54 is disposed between the protective layer 4 and the light sensing wafer 36 to dissipate heat. The metal layer 54 is provided with a heat dissipation layer 56, such as Ag Epoxy Glue, which is also a heat dissipating effect, and the metal layer 54 and the protective layer 40 are integrally formed; in addition, the light transmission φ# 4 4 can also filter specific A source of light in the wavelength range, such as far infrared. Further, the metal wiring 42 may extend to the both surfaces of the molded body 30 as shown in Fig. 2, and may extend to the surface of the bottom of the molded body 3 as shown in Fig. 3, regardless of the metal. The wiring 42 extends to the bottom or both sides of the formed body 30, and the metal wiring 42 is used for connection to a circuit board such as a printed circuit board or a flexible board, and the metal wiring 42 is connected to the circuit board by surface mounting. Further, as shown in FIG. 4, the sealant layer 52 may be provided on both sides of the protective layer 40 and the molded body 30 in addition to the joint between the molded body 3 and the protective layer 40. The light sensing wafer 36 is protected. The invention provides a package structure of a light sensing wafer, which forms a spacing between the protective layer and the light sensing wafer, for example, forming at least one protrusion in the cavity of the shaped body to prevent the protective layer from being formed into a shape. When the body is in use, the photo-sensing wafer will withstand the pressure of the protective layer, which will cause the reliability between the solder pad and the metal wiring to be damaged, thereby avoiding the colloid falling to the photo-sensing wafer in the prior process.

第8頁 1254461 五、發明說明(5) 感測區域,避 良率與品質, 光感測晶片不 設置光感測晶 -高度,而使光 以上所述 —使熟習該技術 定本發明之專 神而完成之等 ►專利範圍中。 免形成一不 且提供一光 受外部微粒 片於成形體 感測晶片的 係藉由實施 者能瞭解本 利範圍,故 效修飾或修 易清洗 穿透至 的污染 之腔體 封裝結 例說明 發明之 凡其他 改,仍 的外來雜質,因此可提言 光感測晶片的機制,= ’並且因為利用覆晶;°式 内,可降低整個封裝體之 構達到輕薄之目的。 本發明之特點,其目的在 内容並據以實施,而非限 未脫離本發明所揭示之精 應包含在以下所述之申請 Η 第9頁 1254461 圖式簡單說明 【圖式簡單說明】 第1圖為習知之光感測晶片封合結構之結構剖視圖。 第2圖為本發明之結構剖視圖。 第3圖為本發明之再一結構剖視圖。 .第4圖為本發明之又一結構剖視圖。 【主要元件符號說明】 1光感測晶片封合結構 1 0成形體 謇2金屬片 1 4透光開口 16透光層 1 8光感測晶片 20膠體 22焊墊 2 4光感測區 3光感測晶片的封裝結構 3 0成形體 j 2透光開口 突出部 3 6光感測晶片 38銲墊 40保護層 4-2金屬佈線Page 8 1254461 V. Description of the invention (5) Sensing area, avoiding the yield and quality, the light sensing wafer is not provided with the light sensing crystal-height, and the light is described above - making the technology familiar with the invention And the completion of the scope of the patent. It is not necessary to provide a light-receiving external microparticle in the molded body to sense the wafer. The implementer can understand the scope of the patent, and the cavity is modified or repaired. Other changes, still foreign impurities, so can mention the mechanism of light sensing wafers, = 'and because of the use of flip chip; ° type, can reduce the structure of the entire package to achieve the purpose of thin. The features of the present invention are intended to be implemented in accordance with the teachings of the present invention, and are not intended to be included in the application of the present invention. The application is as follows. Page 9 1254461 Brief description of the drawing [Simple description of the drawing] The figure shows a structural cross-sectional view of a conventional light sensing wafer sealing structure. Fig. 2 is a cross-sectional view showing the structure of the present invention. Figure 3 is a cross-sectional view showing still another structure of the present invention. Figure 4 is a cross-sectional view showing still another structure of the present invention. [Main component symbol description] 1 Light sensing wafer sealing structure 1 0 forming body 謇 2 metal sheet 1 4 light transmitting opening 16 light transmitting layer 1 8 light sensing wafer 20 colloid 22 solder pad 2 4 light sensing area 3 light Sense wafer package structure 30 shaped body j 2 light-transmissive opening protrusion 3 6 light-sensing wafer 38 solder pad 40 protective layer 4-2 metal wiring

第10頁 1254461 圖式簡單說明 44透光層 46膠體層 48凸塊 5_0凹槽 .5 2封膠層 54金屬層 '5 6散熱層 11^1 第11頁Page 10 1254461 Brief description of the diagram 44 Translucent layer 46 Colloid layer 48 Bump 5_0 Groove .5 2 Sealant layer 54 Metal layer '5 6 Heat dissipation layer 11^1 Page 11

Claims (1)

1254461 六、申請專利範圍1254461 VI. Application for patent scope 1 · 一種光感測晶片的封裝結構,包括: 一個成形體,其係具一腔體,且該成形體開設有一 ϋ以通透光源; 光開 一光感測晶片,其係設置於該腔體内,該光感測晶片 晶接合方式,且該光感測晶片上具有複數個銲塾; 為覆 一保護層,其係設置於該光感測晶片下, 該光感測晶片相隔一間距; 複數個金屬佈線,其係與該光感測晶片上 連接,並延伸至該成形體表面;以及 且該保護層係與 的焊塾形成電性 |一透光層,其係設置於該成形體之該透光開口上。 2 ·如申请專利範圍第1項所述之光感測晶片之封裝、社構 其中,該等銲墊係利用打線的方式形成對應之金屬球 3·如申請專利範圍第1項所述之光感測晶片之封裝結揭^ 其中,該等金屬佈線及該等銲墊係利用超音波共振 性連接 形成電 4·如申請專利範圍第1項所述之光感測晶片之封裝、结$, 其中,該等金屬佈線延伸至該成形體之底部的表面上,ρ 連接至一電路板。 5 ·如申清專利範圍第1項所述之光感測曰曰片之封裝結構, 馨其中,該等金屬佈線係延伸至該成形體之兩側的表面上, 以連接至一電路板。 -6 ·如申請專利範圍第4項或第5項所述之光感測晶片之封裝 -結構,其中,該等金屬佈線係利用表面安裝法連接至該電 路板。1 . The package structure of a light sensing wafer, comprising: a forming body having a cavity, and the forming body is provided with a light source for transmitting light; and a light sensing chip is disposed in the cavity In the body, the light sensing wafer is crystal-bonded, and the photo-sensing wafer has a plurality of solder bumps; a protective layer is disposed under the photo-sensing wafer, and the photo-sensing wafers are separated by a spacing a plurality of metal wirings connected to the photo-sensing wafer and extending to the surface of the forming body; and the protective layer is electrically connected to the soldering pad to form an electro-transmissive layer, which is disposed in the forming The light transmissive opening of the body. 2. The package and the structure of the photo-sensing wafer according to claim 1, wherein the pads are formed by wire bonding to form a corresponding metal ball. 3. The light according to claim 1 The package of the sensing wafer is removed, wherein the metal wiring and the pads are electrically connected by ultrasonic resonance to form a package of light sensing wafers according to claim 1 of the patent application scope, Wherein the metal wiring extends to the surface of the bottom of the formed body, and p is connected to a circuit board. 5. The package structure of the light sensing cymbal according to claim 1, wherein the metal wiring extends to a surface on both sides of the molded body to be connected to a circuit board. The package-structure of the photo-sensing wafer of claim 4, wherein the metal wiring is connected to the circuit board by surface mounting. 1254461 、申請專利範圍 _ 7盆t申:ίϋ範圍第1項所述之光感測晶片之封袭結構, 其中ι等金屬佈線係以電鑛化金成形於該成形 8. 如申請專利範圍第}項所述之光感測晶 表面。 其中,該#金屬佈、線係為金屬花架所成形之金屬褒片、。構, 9. 如申請專利範圍第丨項所述之光感測晶片之封。 其係更包括一封膠層,其係設置於該成形體及該俾^ ’ 接合處下,以保護該光感測晶片。 Μ /、羞㈡之 10·如申請專利範圍第i項所述之光感測晶片之 其係更包括至少一封膠層,其係設置於該 岸側2構, 焯形體間,以保護該光感測晶片❶ 曰側邊及該 11 ·如申請專利範圍第1項所述之光感測晶片之 其係更包括一金屬層,其係設置於該保護層兮^結構’ 片間,用以散熱。 g及該光感測晶 1 2 ·如申請專利範圍第11項所述之光感測晶片之 構,其中,該金屬層與該保護層係為一體成型。、裳結 1 3 ·如申請專利範圍第1項所述之光感測晶片之封士 其係更包括一散熱層,其係設置於該保護層及兮、、、"構’ 片間,用以散熱。 及該光感測晶 1 4·如申請專利範圍第1 3項所述之光感測晶片之私壯 〜对裝矣士 響構,其中,該散熱層係為銀膠。 、、° 1 5 ·如申請專利範圍第1項所述之光感測晶片之封士 更包括至少一突出部,其係設置於該成形體之腔^構、, 使該保護層係與該光感測晶片相隔一間距,用^ ’以 護層放入該成形體時,該光感測晶片承受到該俚 該保 木嗅層的壓1254461, the scope of the patent application _ 7 basin t Shen: ϋ ϋ ϋ range of the light sensing wafer of the sealing structure, wherein the metal wiring such as ι is formed by electroforming gold in the forming 8. The light sensing crystal surface described in the item. Among them, the #metal cloth and the wire are metal slabs formed by metal flower stands. 9. The seal of the photo-sensing wafer as described in the scope of the patent application. The system further includes a glue layer disposed under the joint and the joint to protect the light sensing wafer. Μ /, 羞 (2) 10, as in the photo-sensing wafer of claim i, further comprising at least one adhesive layer disposed between the bank-side structure and the body to protect the The light sensing chip ❶ 曰 side and the optical sensing wafer according to claim 1 further comprise a metal layer disposed between the protective layer and the structure For heat dissipation. And a photo-sensing wafer structure according to claim 11, wherein the metal layer and the protective layer are integrally formed. The skirt of the photo-sensing wafer of claim 1 further includes a heat-dissipating layer disposed between the protective layer and the 兮, , , " Used to dissipate heat. And the photo-sensing crystal is as described in claim 13 of the invention, wherein the heat-dissipating layer is silver paste. The sealing of the photo-sensing wafer of claim 1, further comprising at least one protrusion disposed in the cavity of the forming body, and the protective layer is The light sensing wafer is separated by a distance, and when the protective layer is placed in the forming body, the light sensing wafer receives the pressure of the protective layer 1254461 六、申請專利範圍 1 9·如申請專利範圍第1 8項所述之光感测晶片之封裝結 構,其中,談成形體具有至少一凸塊,且在該凸塊"上°開設 馨有至少一凹槽,以使該膠體層溢至該凹槽内以保護該光减 測晶片不受污染。 ~ 力。 1 6 ·如申請專利範圍第1項所 其中,該透光層可用以過濾 17 ·如申請專利範圍第1 6項 .構,其中,該透光層係過濾 18·如申請專利範圍第1項所 '更包括一膠體層,其係位於 述之光感測晶片之封裝結構, 特定的光波長範圍之光源。 戶斤述之光感測晶片之封裝結 遠紅外光線。 述之光感測晶片之封裝結構, 該成形體及該透光層間。125 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 There is at least one recess to allow the colloid layer to overflow into the recess to protect the optical metrology wafer from contamination. ~ Force. 1 6 · The light transmissive layer can be used to filter 17 according to the scope of claim 1 of the patent application. The structure of the light-transmissive layer is filtered, as in the first application of the patent application. The 'further includes a colloid layer, which is located in the package structure of the photo-sensing wafer, the light source of a specific wavelength range of light. The package of the light sensing chip of the household is far infrared light. The package structure of the light sensing wafer, the molded body and the light transmissive layer. 第14頁Page 14
TW94118320A 2005-06-03 2005-06-03 Package structure of photosensitive chip TWI254461B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94118320A TWI254461B (en) 2005-06-03 2005-06-03 Package structure of photosensitive chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94118320A TWI254461B (en) 2005-06-03 2005-06-03 Package structure of photosensitive chip

Publications (2)

Publication Number Publication Date
TWI254461B true TWI254461B (en) 2006-05-01
TW200644260A TW200644260A (en) 2006-12-16

Family

ID=37587323

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94118320A TWI254461B (en) 2005-06-03 2005-06-03 Package structure of photosensitive chip

Country Status (1)

Country Link
TW (1) TWI254461B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427748B (en) * 2010-05-19 2014-02-21 Tdk Taiwan Corp Packaging device of image sensor

Also Published As

Publication number Publication date
TW200644260A (en) 2006-12-16

Similar Documents

Publication Publication Date Title
US10032824B2 (en) Image sensor structure and packaging method thereof
US6072232A (en) Windowed non-ceramic package having embedded frame
TWI540709B (en) Optoelectronic package and method of manufacturing the same
JP5746919B2 (en) Semiconductor package
JP4542768B2 (en) Solid-state imaging device and manufacturing method thereof
JP2010153726A (en) Manufacturing method for semiconductor device, and semiconductor device
JP2007288755A (en) Camera module
JP2010166021A (en) Semiconductor device, and manufacturing method thereof
US20210313367A1 (en) Semiconductor device, electronic apparatus, and method for manufacturing semiconductor device
JP2022023664A (en) Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
TW201939768A (en) Optoelectronic package
TW200805596A (en) Method of packaging semiconductor die
JP2003332542A (en) Semiconductor device and method of manufacturing the same
TWI254461B (en) Package structure of photosensitive chip
KR100497286B1 (en) Chip on board type image sensor module and manufacturing method thereof
JP2010273087A (en) Semiconductor device and method for manufacturing the same
CN107994039B (en) Wafer level packaging method of CMOS image sensor
CN109860211B (en) Packaging method of image sensor
JP2010199410A (en) Semiconductor device and method for manufacturing thereof
TWM271321U (en) Flip-chip packaging device
KR20050120142A (en) Camera module and method of fabricating the same using epoxy
WO2023112521A1 (en) Semiconductor device, electronic device and method for producing semiconductor device
TW200805588A (en) Chip scale image sensor package and module utilizing the same
WO2023058413A1 (en) Semiconductor device and electronic equipment
TWI476876B (en) Window type camera module structure

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees