TWI246786B - Substrate-free flip chip light emitting diode and manufacturing method thereof - Google Patents

Substrate-free flip chip light emitting diode and manufacturing method thereof Download PDF

Info

Publication number: TWI246786B
Authority: TW; Taiwan
Prior art keywords: light; layer; emitting diode; substrate; electrode
Prior art date: 2005-05-09

Application number

TW094114854A

Other languages

English (en)

Chinese (zh)

Other versions

TW200640032A (en

Inventor

Ching-Chung Chen

Original Assignee

Chunghwa Picture Tubes Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-05-09

Filing date

2005-05-09

Publication date

2006-01-01

2005-05-09 Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd

2005-05-09 Priority to TW094114854A priority Critical patent/TWI246786B/zh

2006-01-01 Application granted granted Critical

2006-01-01 Publication of TWI246786B publication Critical patent/TWI246786B/zh

2006-04-23 Priority to DE102006019373A priority patent/DE102006019373A1/de

2006-04-25 Priority to GB0608131A priority patent/GB2426123B/en

2006-04-25 Priority to GB0708932A priority patent/GB2437848B/en

2006-05-04 Priority to FR0651612A priority patent/FR2885455A1/fr

2006-11-16 Publication of TW200640032A publication Critical patent/TW200640032A/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 48
239000000758 substrate Substances 0.000 claims abstract description 135
239000010410 layer Substances 0.000 claims description 172
239000004065 semiconductor Substances 0.000 claims description 37
238000000034 method Methods 0.000 claims description 35
150000001875 compounds Chemical class 0.000 claims description 33
239000000463 material Substances 0.000 claims description 30
230000017525 heat dissipation Effects 0.000 claims description 26
239000011241 protective layer Substances 0.000 claims description 19
238000002834 transmittance Methods 0.000 claims description 19
239000013078 crystal Substances 0.000 claims description 17
238000009826 distribution Methods 0.000 claims description 17
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
241000238631 Hexapoda Species 0.000 claims description 11
229910052733 gallium Inorganic materials 0.000 claims description 11
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 9
229910002601 GaN Inorganic materials 0.000 claims description 9
239000012790 adhesive layer Substances 0.000 claims description 9
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
229910052799 carbon Inorganic materials 0.000 claims description 8
229910052738 indium Inorganic materials 0.000 claims description 7
239000000919 ceramic Substances 0.000 claims description 6
229910000420 cerium oxide Inorganic materials 0.000 claims description 6
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 5
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 4
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
229910003468 tantalcarbide Inorganic materials 0.000 claims description 4
VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 3
239000004575 stone Substances 0.000 claims description 3
229910004205 SiNX Inorganic materials 0.000 claims description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
241000282326 Felis catus Species 0.000 claims 1
229910052797 bismuth Inorganic materials 0.000 claims 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
150000002258 gallium Chemical class 0.000 claims 1
238000004020 luminiscence type Methods 0.000 claims 1
229910052757 nitrogen Inorganic materials 0.000 claims 1
230000003071 parasitic effect Effects 0.000 claims 1
239000012780 transparent material Substances 0.000 abstract 1
238000005253 cladding Methods 0.000 description 8
229910052732 germanium Inorganic materials 0.000 description 6
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
238000000605 extraction Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
229910052715 tantalum Inorganic materials 0.000 description 3
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
238000005137 deposition process Methods 0.000 description 2
238000001312 dry etching Methods 0.000 description 2
238000005530 etching Methods 0.000 description 2
-1 gallium (Gap) Chemical class 0.000 description 2
238000001039 wet etching Methods 0.000 description 2
SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
239000004593 Epoxy Substances 0.000 description 1
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
240000007594 Oryza sativa Species 0.000 description 1
235000007164 Oryza sativa Nutrition 0.000 description 1
206010036790 Productive cough Diseases 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
239000011358 absorbing material Substances 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
CZJCMXPZSYNVLP-UHFFFAOYSA-N antimony zinc Chemical compound [Zn].[Sb] CZJCMXPZSYNVLP-UHFFFAOYSA-N 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000004945 emulsification Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000005286 illumination Methods 0.000 description 1
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
229910052753 mercury Inorganic materials 0.000 description 1
239000000203 mixture Substances 0.000 description 1
210000003205 muscle Anatomy 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
238000005121 nitriding Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
210000004508 polar body Anatomy 0.000 description 1
230000036632 reaction speed Effects 0.000 description 1
235000009566 rice Nutrition 0.000 description 1
229910052707 ruthenium Inorganic materials 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
239000002689 soil Substances 0.000 description 1
210000003802 sputum Anatomy 0.000 description 1
208000024794 sputum Diseases 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1
239000011701 zinc Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Devices (AREA)
Led Device Packages (AREA)

TW094114854A 2005-05-09 2005-05-09 Substrate-free flip chip light emitting diode and manufacturing method thereof TWI246786B (en)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
TW094114854A TWI246786B (en)	2005-05-09	2005-05-09	Substrate-free flip chip light emitting diode and manufacturing method thereof
DE102006019373A DE102006019373A1 (de)	2005-05-09	2006-04-23	Substratfreie Flip Chip lichtemittierende Diode und Verfahren zu deren Herstellung
GB0608131A GB2426123B (en)	2005-05-09	2006-04-25	Substrate-free flip chip light emitting diode and manufacturing method thereof
GB0708932A GB2437848B (en)	2005-05-09	2006-04-25	Substrate-free chip light emitting diode and manufacturing method thereof
FR0651612A FR2885455A1 (fr)	2005-05-09	2006-05-04	Diode electroluminescente a puce retournee sans substrat, et procede de fabrication de celle-ci

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
TW094114854A TWI246786B (en)	2005-05-09	2005-05-09	Substrate-free flip chip light emitting diode and manufacturing method thereof

Publications (2)

Publication Number	Publication Date
TWI246786B true TWI246786B (en)	2006-01-01
TW200640032A TW200640032A (en)	2006-11-16

Family

ID=36589747

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW094114854A TWI246786B (en)	2005-05-09	2005-05-09	Substrate-free flip chip light emitting diode and manufacturing method thereof

Country Status (4)

Country	Link
DE (1)	DE102006019373A1 (fr)
FR (1)	FR2885455A1 (fr)
GB (1)	GB2426123B (fr)
TW (1)	TWI246786B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN109671810A (zh) *	2017-10-16	2019-04-23	鼎元光电科技股份有限公司	无衬底的发光二极管及其制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102008006757A1 (de)	2008-01-30	2009-08-06	Osram Opto Semiconductors Gmbh	Oberflächenmontierbares Bauelement
DE102008021402B4 (de) *	2008-04-29	2023-08-10	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Oberflächenmontierbares Leuchtdioden-Modul und Verfahren zur Herstellung eines oberflächenmontierbaren Leuchtdioden-Moduls
DE102009060759A1 (de)	2009-12-30	2011-07-07	OSRAM Opto Semiconductors GmbH, 93055	Strahlungsemittierende Vorrichtung, Modul mit einer strahlungsemittierenden Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung
US9601657B2 (en) *	2011-03-17	2017-03-21	Epistar Corporation	Light-emitting device
TWI646701B (zh) *	2017-09-29	2019-01-01	鼎元光電科技股份有限公司	Light-emitting diode without substrate and manufacturing method thereof
TWI635605B (zh) *	2017-11-02	2018-09-11	錼創顯示科技股份有限公司	微型發光二極體顯示面板

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH11154774A (ja) *	1997-08-05	1999-06-08	Canon Inc	面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置
US20040211972A1 (en) *	2003-04-22	2004-10-28	Gelcore, Llc	Flip-chip light emitting diode
US6806112B1 (en) *	2003-09-22	2004-10-19	National Chung-Hsing University	High brightness light emitting diode
US20050191777A1 (en) *	2003-09-22	2005-09-01	National Chung-Hsing University	Method for producing light emitting diode with plated substrate

2005
- 2005-05-09 TW TW094114854A patent/TWI246786B/zh not_active IP Right Cessation
2006
- 2006-04-23 DE DE102006019373A patent/DE102006019373A1/de not_active Withdrawn
- 2006-04-25 GB GB0608131A patent/GB2426123B/en not_active Expired - Fee Related
- 2006-05-04 FR FR0651612A patent/FR2885455A1/fr not_active Withdrawn

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN109671810A (zh) *	2017-10-16	2019-04-23	鼎元光电科技股份有限公司	无衬底的发光二极管及其制造方法

Also Published As

Publication number	Publication date
GB0608131D0 (en)	2006-06-07
TW200640032A (en)	2006-11-16
GB2426123A (en)	2006-11-15
DE102006019373A1 (de)	2006-11-23
FR2885455A1 (fr)	2006-11-10
GB2426123B (en)	2007-09-26

Legal Events

Date	Code	Title	Description
2017-10-01	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
KR101438818B1 (ko)	2014-09-05	발광다이오드 소자
TW550834B (en)	2003-09-01	Light emitting diode and its manufacturing method
JP4557542B2 (ja)	2010-10-06	窒化物発光装置及び高発光効率窒化物発光装置
TW540167B (en)	2003-07-01	Semiconductor light emitting device and method
TW541732B (en)	2003-07-11	Manufacturing method of LED having transparent substrate
TWI246786B (en)	2006-01-01	Substrate-free flip chip light emitting diode and manufacturing method thereof
US20110140078A1 (en)	2011-06-16	Light-emitting device and method of making the same
US8179039B2 (en)	2012-05-15	Light emitting device, method of manufacturing the same, light emitting device package, and illumination system
TWI253770B (en)	2006-04-21	Light emitting diode and manufacturing method thereof
TW200828633A (en)	2008-07-01	Light emitting device package and method for manufacturing the same
JP2011187735A (ja)	2011-09-22	半導体発光装置および半導体発光装置の製造方法
JP2005051255A (ja)	2005-02-24	薄くされたまたは除去された基板を有するフリップチップ発光ダイオード・デバイス
TW200903856A (en)	2009-01-16	Semiconductor light emitting device and method
JP2009043764A (ja)	2009-02-26	半導体発光素子及びその製造方法
JP4843235B2 (ja)	2011-12-21	Ｉｉｉ族窒化物半導体発光素子の製造方法
TW201126693A (en)	2011-08-01	Top view type of light emitting diode package structure and fabrication thereof
JP4393306B2 (ja)	2010-01-06	半導体発光素子およびその製造方法並びに半導体装置
WO2012174950A1 (fr)	2012-12-27	Dispositif semi-conducteur électroluminescent émettant dans l'ultraviolet profond et son procédé de fabrication
US20110001155A1 (en)	2011-01-06	Light-emitting device and manufacturing method thereof
TWI237407B (en)	2005-08-01	Light emitting diode having an adhesive layer and manufacturing method thereof
KR20090105462A (ko)	2009-10-07	수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
TW201519471A (zh)	2015-05-16	光電元件及其製造方法
KR20090106294A (ko)	2009-10-08	수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
JP2004319685A (ja)	2004-11-11	半導体発光素子および半導体発光装置
TWI436497B (zh)	2014-05-01	發光元件之製造方法

TWI246786B - Substrate-free flip chip light emitting diode and manufacturing method thereof - Google Patents

Info

Links

Classifications

Landscapes

Priority Applications (5)

Applications Claiming Priority (1)

Publications (2)

Family

ID=36589747

Family Applications (1)

Country Status (4)

Cited By (1)

Families Citing this family (6)

Family Cites Families (4)

Cited By (1)

Also Published As

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