GB0608131D0 - Substrate-free flip chip light emitting diode and manufacturing method thereof - Google Patents

Substrate-free flip chip light emitting diode and manufacturing method thereof

Info

Publication number
GB0608131D0
GB0608131D0 GBGB0608131.9A GB0608131A GB0608131D0 GB 0608131 D0 GB0608131 D0 GB 0608131D0 GB 0608131 A GB0608131 A GB 0608131A GB 0608131 D0 GB0608131 D0 GB 0608131D0
Authority
GB
United Kingdom
Prior art keywords
substrate
manufacturing
light emitting
emitting diode
flip chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0608131.9A
Other versions
GB2426123B (en
GB2426123A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chunghwa Picture Tubes Ltd
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to GB0708932A priority Critical patent/GB2437848B/en
Publication of GB0608131D0 publication Critical patent/GB0608131D0/en
Publication of GB2426123A publication Critical patent/GB2426123A/en
Application granted granted Critical
Publication of GB2426123B publication Critical patent/GB2426123B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/0079
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
GB0608131A 2005-05-09 2006-04-25 Substrate-free flip chip light emitting diode and manufacturing method thereof Expired - Fee Related GB2426123B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0708932A GB2437848B (en) 2005-05-09 2006-04-25 Substrate-free chip light emitting diode and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094114854A TWI246786B (en) 2005-05-09 2005-05-09 Substrate-free flip chip light emitting diode and manufacturing method thereof

Publications (3)

Publication Number Publication Date
GB0608131D0 true GB0608131D0 (en) 2006-06-07
GB2426123A GB2426123A (en) 2006-11-15
GB2426123B GB2426123B (en) 2007-09-26

Family

ID=36589747

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0608131A Expired - Fee Related GB2426123B (en) 2005-05-09 2006-04-25 Substrate-free flip chip light emitting diode and manufacturing method thereof

Country Status (4)

Country Link
DE (1) DE102006019373A1 (en)
FR (1) FR2885455A1 (en)
GB (1) GB2426123B (en)
TW (1) TWI246786B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008006757A1 (en) 2008-01-30 2009-08-06 Osram Opto Semiconductors Gmbh Surface-mountable component e.g. thin film LED, for being assembled on mother board i.e. printed circuit board, has semiconductor chip with rear side contact connected with contact structure that is arranged on surface of substrate
DE102008021402B4 (en) 2008-04-29 2023-08-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Surface mount light emitting diode module and method for manufacturing a surface mount light emitting diode module
DE102009060759A1 (en) 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 A radiation-emitting device, module with a radiation-emitting device and method for producing a radiation-emitting device
US9601657B2 (en) 2011-03-17 2017-03-21 Epistar Corporation Light-emitting device
TWI646701B (en) * 2017-09-29 2019-01-01 鼎元光電科技股份有限公司 Light-emitting diode without substrate and manufacturing method thereof
CN109671810A (en) * 2017-10-16 2019-04-23 鼎元光电科技股份有限公司 Light emitting diode and its manufacturing method without substrate
TWI635605B (en) * 2017-11-02 2018-09-11 錼創顯示科技股份有限公司 Micro-led display panel

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154774A (en) * 1997-08-05 1999-06-08 Canon Inc Surface light emission type semiconductor device, manufacture thereof, and display device using the same
US20040211972A1 (en) * 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
US20050191777A1 (en) * 2003-09-22 2005-09-01 National Chung-Hsing University Method for producing light emitting diode with plated substrate
US6806112B1 (en) * 2003-09-22 2004-10-19 National Chung-Hsing University High brightness light emitting diode

Also Published As

Publication number Publication date
GB2426123B (en) 2007-09-26
TW200640032A (en) 2006-11-16
GB2426123A (en) 2006-11-15
DE102006019373A1 (en) 2006-11-23
FR2885455A1 (en) 2006-11-10
TWI246786B (en) 2006-01-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160425