TWI244620B - IC card and frame for IC card - Google Patents

IC card and frame for IC card Download PDF

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Publication number
TWI244620B
TWI244620B TW88106958A TW88106958A TWI244620B TW I244620 B TWI244620 B TW I244620B TW 88106958 A TW88106958 A TW 88106958A TW 88106958 A TW88106958 A TW 88106958A TW I244620 B TWI244620 B TW I244620B
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TW
Taiwan
Prior art keywords
terminal
wire
coil
semiconductor element
planar coil
Prior art date
Application number
TW88106958A
Other languages
Chinese (zh)
Inventor
Takashi Ikeda
Masatoshi Akagawa
Daisuke Ito
Original Assignee
Shinko Electric Ind Co
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Publication date
Priority claimed from JP25292098A external-priority patent/JP3542281B2/en
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
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Publication of TWI244620B publication Critical patent/TWI244620B/en

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Abstract

An IC card using a plane coil formed by punching or etching is obtained at low cost and good productivity. The IC card comprises a plane coil 10 in which a conductor line 11 is wound several times in substantially the same plane and formed by punching. Terminals 10a and 10b of the plane coil 10 are electrically connected to electrode terminals 12a and 12b of a semiconductor element 12. The plane coil 10 has the outer terminal 10a located at the outside of the coil and the inner terminal 10b located at the inside of the coil. The semiconductor element 12 is arranged in such a manner that the surface of the electrode terminals 12a and 12b or an opposite surface thereof faces the conductor line 11 of the plane coil 10 and the electrode terminals 12a and 12b of the semiconductor element 12 are arranged adjacent to the respective outer terminal 10a and inner terminal 10b of the plane coil 10. The electrode terminals 12a and 12b are electrically connected to the terminals 10a and 10b of the plane coil 10, respectively, positioned at the same side with respect to the inside and outside of the coil.

Description

1244620 A7 __ B7 五、發明説明(2 ) 平面線圈100係在線圈之内側及外側形成有端子102、104。 因此’在用來連接平面線圈100之端子102、104與半導體元 件106之電極端子1〇8、110的金屬線112、114中,金屬線114及橫 穿一用來形成平面線圈1 〇〇之導線1 〇 1。因此,將絕緣被覆線用於 金屬線112、114時,難以謀求1C卡之進一步的低成本化。 一方面,將非絕緣性線用於不會穿越平面線圈1〇〇之金 屬線112,並將絕緣被覆線用於一用來橫穿平面線圈1〇〇之 金屬線114時,必需要使用二種之金屬線,導致ic卡之製造工程 變成複雜,難以謀求1C卡之低成本化及大量生產化。 又,由於1C卡形成1mm以下之厚度,而有必要具備可形成 極4之要件。又,藉加壓加工等來形成之平面線圈必需具有優異 的運送等之處理性,且須可適用於半導體元件之裝载者。 [發明之揭露] 於是,本發明之第一課題,係在於提供一種使用藉加壓加工 來形成的平面線圈來謀求低成本化及大量生產化之冗卡。 本發明之第二課題,係在於提供一種具有優異之大量生產性及 運送等之處理性同時,也可適宜地對應於IC卡之薄型化的IC卡用框 木,及具有優異之大量生產化且可適當地應付薄型化的IC卡。 本發明者們,為了解決前述第一課題,而重覆進行檢 寸…果判明了 ·一般而言,除了半導體元件之電極端子 乂外之表面由於鈍化膜而變成電絕緣,所以,可將電極端 子Μ外之半導體元件之部分跟平面線圈之導線接觸;及使 半導體7L件之電極端子位於平面線圈側,藉此可將平面線 圈之端子配設在半導體元件之電極端子附近。 本紙張尺度杯_ (請先Κ讀背面之注意事項再填窝本頁) 、可| 1244620 A7 B7 五、發明説明( 為此,本發明者們,對於平面線圈100,設置半導體 元件106 ’以便電極端子1〇8、11〇成為導線1〇1側且 屬線來接合半導體元件1〇6之電極端子108、11〇與平^ 圈100之端子1〇2、104之各個。同時,判明了:此 不而要縣被覆,用來連接平面線圈1GG與半導體元件1〇6 之金屬線;及可採用從以往即作為半導體元件與弓丨線框架 之内引線的接合法採用之楔形接合法,而達到了本發明: 即,用來解決前述第-課題之本發明為一種扣卡,係 藉加壓加工或蝕刻加工來形成一由導線在實質地同一之平 面上捲繞多數圈而成之平面線圈,且將前述平面線圈之端 子與半導體%件之電極端子加以電接者;其特徵在於: 該平面線圈,備有形成在線圈内侧之内側端子 在線圈外侧之外側端子; '九 前述半導體元件,伽設成其電極端子之形成面對向於平面 線圈之導線同時,跟前述平面線圈之内側端子及外側端子連接之半 導體兀件的電極端子之各個分別位置在線圈之内側及外側;且, 則述半導體元件之電極端子,係與對於線圈之内外方 向位置成同一側之平面線圈之端子電接。 又’本發明者們,為了解決前述第二課題,而對於平面線 圈100設置半導體元件106,以便背面側之平面對於電極端子108 、110成為導線101侧,並用金屬線來接合半導體元件106之電極 端子108、110與平面線圈1〇〇之端子1〇2、104的各個。同時,判 明了:此1C卡並不需要絕緣被覆一用來連接平面線圈100與半導 體元件106之金屬線;及可採用從以往即作為半導體元件與引線 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ 297公釐) (請先閲讀背面之注意事項再填寫本頁} .裝· •訂 經濟部智慧財產局員工消費合作社印製 r 1244620 A7 B7 五 發明説明(4 經濟部智慧財產局員工消費合作社印製 框架之内引線之接合法採用之楔形接合法。 即,用來解決前述第二課題之本發明為_種扣卡乂 藉加壓加工或蝕刻加工來形成一由導線在實質地同一係 面捲繞多數圈而成之平面線圈,且將前述平面線圈之= 與半導體元件之電極端子加以電接者;其特徵在於· 該平面線圈,備有形成在線圈内侧之内側端子及I、 在線圈外側之外側端子; > 成 前述半導體元件,係配設成其背面側之平面對於其電 極端子之形成面,跟平面線圈之導線對向,同時跟前述平 面線圈之内侧端子及外侧端子連接之半導體元件的電極端 子之各個分別位置在線圈之内側及外侧;且, 則述半導體元件之電極端子,係與向線圈之内外方白 位置成同一側之平面線圈之端子電接。 又,用來解決前述第二課題之本發明為一種1(:卡,係 藉加工或蝕刻加工來形成一由導線在實質地同一之平面i 捲繞多數圈而成之平面線圈,且將前述平面線圈之端子與 半導體元件之電極端子加以電接者;其特徵在於: 該平面線圈,備有形成在線圈内側之内側端子及形成 在線圈外側端子; 前述半導體元件,係由樹脂所模塑成:露出一形成在 引線刖端部之連接部,該引線係接合於其電極端子·,同時 跟前述平面線圈之内側端子及外側端子連接之引線的連接 部之各個分別位置在線圈之内側及外側;且, 前述引線之連接部,係與對於線圈之内外方向位置或 本紙張尺度適用中國國家標準(CNS ) A4規格(210x297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝. 訂1244620 A7 __ B7 V. Description of the invention (2) The planar coil 100 is formed with terminals 102 and 104 on the inside and outside of the coil. Therefore, among the metal wires 112 and 114 used to connect the terminals 102 and 104 of the planar coil 100 and the electrode terminals 108 and 110 of the semiconductor element 106, the metal wire 114 and a metal wire 114 traversing one to form the planar coil 100 Lead 1 〇1. Therefore, when using insulated coated wires for the metal wires 112 and 114, it is difficult to further reduce the cost of the 1C card. On the one hand, when using non-insulated wires for the metal wires 112 that do not pass through the planar coil 100, and using insulated coated wires for a metal wire 114 that crosses the planar coil 100, it is necessary to use two wires. This kind of metal wire makes the manufacturing process of IC cards complicated, and it is difficult to achieve low cost and mass production of 1C cards. In addition, since the 1C card is formed to a thickness of 1 mm or less, it is necessary to have a requirement that the electrode 4 can be formed. In addition, the planar coil formed by press working or the like must have excellent rationality in transportation and the like, and it must be suitable for a semiconductor device loader. [Disclosure of Invention] Therefore, a first object of the present invention is to provide a redundant card that uses a planar coil formed by press working to reduce cost and mass production. The second object of the present invention is to provide an IC card frame wood that is excellent in mass productivity and transportation, and also suitable for thinning of IC cards, and has excellent mass production. In addition, it can appropriately cope with a thin IC card. In order to solve the first problem described above, the present inventors repeated the inspection ... It is clear that, in general, the surface other than the electrode terminal 乂 of the semiconductor element becomes electrically insulated by a passivation film, so the electrode can be The part of the semiconductor element outside the terminal M is in contact with the wire of the planar coil; and the electrode terminal of the semiconductor 7L is located on the side of the planar coil, so that the terminal of the planar coil can be arranged near the electrode terminal of the semiconductor element. This paper scale cup _ (please read the precautions on the back before filling this page), can | 1244620 A7 B7 V. Description of the invention (for this, the inventors, for the flat coil 100, set the semiconductor element 106 'so that The electrode terminals 108 and 110 become the wires 101 side and belong to the electrode terminals 108 and 110 of the semiconductor element 106 and the terminals 100 and 104 of the coil 100. At the same time, it was determined : It is not only necessary to cover the metal wires used to connect the planar coil 1GG and the semiconductor element 106; and the wedge bonding method that can be used from the past as the bonding method of the semiconductor element and the inner lead of the bow frame, The present invention has been achieved: That is, the present invention used to solve the aforementioned first problem is a buckle, which is formed by winding a plurality of turns of a wire on a substantially the same plane by pressing or etching. A planar coil, and the terminal of the aforementioned planar coil and the electrode terminal of the semiconductor component are electrically connected; the planar coil is provided with an inner terminal formed on the inner side of the coil and a terminal outside the outer side of the coil; The semiconductor element is arranged such that the electrode terminals are formed to face the wires facing the planar coil, and the respective positions of the electrode terminals of the semiconductor element connected to the inner terminal and the outer terminal of the planar coil are at the inner and outer sides of the coil, respectively. In addition, the electrode terminals of the semiconductor element are electrically connected to the terminals of the planar coil on the same side as the position in the inner and outer directions of the coil. The inventors also provided the planar coil 100 in order to solve the second problem described above. The semiconductor element 106 is such that the plane on the back side becomes the lead 101 side with respect to the electrode terminals 108 and 110, and each of the electrode terminals 108 and 110 of the semiconductor element 106 and the terminals 102 and 104 of the planar coil 100 is bonded with a metal wire. At the same time, it was found that: this 1C card does not need to be insulated and covered with a metal wire used to connect the planar coil 100 and the semiconductor element 106; and it can be used as a semiconductor element and a lead from the past. The paper standard is applicable to the Chinese National Standard (CNS) Α4 Specifications (210 × 297 mm) (Please read the precautions on the back before filling out this page}. Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative r 1244620 A7 B7 Five invention descriptions (4 Wedge-shaped junction method adopted by the method of joining the inner leads of the printed frame of the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative. That is, it is used to solve the aforementioned second The invention of the subject is _ a kind of buckle, which is formed by pressing or etching to form a planar coil formed by winding a plurality of turns of a wire on a substantially same plane, and the aforementioned planar coil is equal to an electrode of a semiconductor element The terminal is electrically connected; it is characterized in that the planar coil is provided with an inner terminal formed on the inner side of the coil and I and a terminal outside the outer side of the coil; > The formation surfaces of the electrode terminals thereof are opposite to the conducting wires of the planar coil, and the respective positions of the electrode terminals of the semiconductor elements connected to the above-mentioned inner and outer terminals of the planar coil are respectively located inside and outside the coil; and The electrode terminals are electrically connected to the terminals of the planar coil on the same side as the white position inside and outside the coil. In addition, the present invention for solving the aforementioned second problem is a 1 (: card), which is formed by machining or etching to form a planar coil formed by winding a plurality of turns of a wire on a substantially same plane i, and The planar coil terminal is electrically connected to the electrode terminal of a semiconductor element. The planar coil is provided with an inner terminal formed on the inner side of the coil and an outer terminal formed on the coil. The aforementioned semiconductor element is molded from resin. : A connection portion formed at the end of the lead is exposed, and the lead is bonded to its electrode terminal. At the same time, each position of the connection portion of the lead connected to the inner terminal and the outer terminal of the planar coil is located inside and outside the coil, respectively. ; And, the connecting part of the aforementioned lead is applied to the inside and outside direction of the coil or the paper size to the Chinese National Standard (CNS) A4 specification (210x297 mm) (Please read the precautions on the back before filling this page). Order

經濟部智慧財產局員工消費合作社印製 1244620 同一侧之平面線圈之端子電接。 又’用來解決前述第-嘈^ 士 *Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1244620 The terminals of the plane coil on the same side are electrically connected. Also ’is used to resolve the aforementioned first-noise ^ 士 *

藉加工^心工來形二艾二=地為-㈣卡 捲繞多數圏而成之平面線靥質地同一之平面_ 半導體元件之電_ ’且將前述平面線圈之端子I 跟針U 引線係接合於其電極端子.同味 跟別述平面線圈之内側 &千,同時 部之各個分別位置在線圈之内卜侧〜子連接之引線的連接 二、、 置在線圈之内側及外側;且,By processing ^ heart work to shape two, two = two ground planes-a flat wire made of a large number of coils, a plane with the same texture _ a semiconductor element of electricity _ 'and the terminal I of the plane coil and the pin U lead system It is connected to its electrode terminal. It is the same as the inside of the planar coil, and each of the simultaneous parts is located on the inner side of the coil. The connection of the sub-connected leads is placed on the inside and outside of the coil; and ,

同-接部’係與對於線圏之内外方向位置或 例之+面線圈之端子電接。 罝A 又’用來解決前述第- 1C卡用k加 琛喊之本發明為一種用於1C卡製造之 卡:卞,卡係藉加愿加工魏刻加工 =:上捲繞多數圈而成之平面線圈,且將前述平二 、導體之70件之電極端子細電接者;其特徵在於: 前述平面線圈’備有:内側端子,其係形成在線圈之内侧, 此線圈分別電接有一對於線圈之内側及外側位置成同一側之半導 體元件的電極端子;及外側端子,其係形成在線圈之外側。 又,本發明中所稱之「實質上在同一面上」係意味著, 即使在構成平面線圈之一部分的導線之一部分形成有凹凸, 只要就平面線圈之全體而言在同一面上捲繞有導線即可。 [圖式之簡單說明] 本紙張尺度適用中國國家標隼(CNS) Μ規格U10XM公瘦)The same-connection portion 'is electrically connected to the terminal of the + surface coil for the position or example in the inner and outer directions of the coil.罝 A is also used to solve the aforesaid first-1C card. This invention called by k Gachen is a kind of card for 1C card manufacturing: 卡, the card is made by adding a wish to processing. A flat coil, and a thin electrical connection of the aforementioned electrode terminals of 70 flat conductors; characterized in that the aforementioned flat coils are provided with: inner terminals, which are formed on the inner side of the coils, and each of these coils is electrically connected with one The electrode terminals of the semiconductor element whose inner and outer positions are on the same side of the coil; and the outer terminals are formed on the outer side of the coil. The term "substantially on the same surface" as used in the present invention means that even if a part of the conductive wire constituting a part of the planar coil is formed with irregularities, the entire planar coil is wound on the same surface. Just the wire. [Simplified description of the drawing] This paper size is applicable to China National Standard (CNS) M specifications U10XM male thin)

---------- -8 - 1244620 A7 B7 五、發明説明(6---------- -8-1244620 A7 B7 V. Description of the invention (6

第1圖為一正面圖,係用以說明關於本發明之1C卡的 一例0 第2圖為係表示第i圖的IC卡之部分斷面圖。 第圖為正面圖’係用以說明一形成有多數個平面 線圈的框架。 第4(a)〜4(e)圖,係用以說明楔形接合法之說明圖。 第5圖為一部分斷面圖,係用以說明關於本發明之1C 卡之其他例。 第6圖為一部分正面圖,係用以說明關於本發明之1C 卡之其他例。 第7圖為一部分斜視圖,係用以說明構成第1圖、第2 圖、第5圖及第ό圖所示之1(:卡的平面線圈之端子。 第8圖為一部分正面圖,係用以說明關於本發明之忆 卡的其他例。 第9圖為一部分斜視圖,係用以說明構成第8圖所示之 1C卡的平面線圈之端子。 係用以說明關於本發明之1C —iij (請先閱讀背面之注意事項再填寫本頁) -裝· 訂 經濟部智慧財產局員工消費合作社印製 第10圖為一部分正面圖 卡的其他例。 第11圖為一部分斜視圖 卡的平面線圈之端子。 第12圖為一部分斜視圖 面線圈的端子之其他例。 第13圖為一部分斜視圖,係用以說明形成平面線圈( 構成有第7圖、第9圖、第11圖及第12圖所示之ic卡)之端Fig. 1 is a front view for explaining an example of the 1C card of the present invention. Fig. 2 is a partial cross-sectional view showing the IC card of Fig. I. The figure is a front view 'for explaining a frame in which a plurality of planar coils are formed. Figures 4 (a) to 4 (e) are explanatory diagrams for explaining the wedge bonding method. Fig. 5 is a partial cross-sectional view for explaining another example of the 1C card of the present invention. Fig. 6 is a partial front view for explaining another example of the 1C card of the present invention. Fig. 7 is a perspective view of a part, and is used to describe the terminal of the plane coil (1) shown in Figs. 1, 2, 5, and 6; Fig. 8 is a front view of a part, It is used to explain other examples of the memory card of the present invention. Fig. 9 is a perspective view of a part, and is used to explain the terminals of the planar coil constituting the 1C card shown in Fig. 8. It is used to explain the 1C of the present invention. iij (Please read the precautions on the back before filling out this page)-Binding and Binding Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs Figure 10 is another example of a part of the front view card. Figure 11 is a plan view of a part of the oblique view card Coil terminals. Figure 12 is a partial oblique view of another example of a surface-coil terminal. Figure 13 is a partial oblique view illustrating the formation of a planar coil (constructed with Figure 7, Figure 9, Figure 11, and Section 1). 12 IC card shown)

係用以說明關於本發明之1C 係用以說明第11圖所示之平It is used to explain the 1C of the present invention. It is used to explain the level shown in Figure 11.

9 r 1244620 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(7 ) 子前的導線11之端部。 第14圖為一部分斷面圖,係用以說明關於本發明之IC 卡的其他例。 第15圖為一斜視圖,係用以說明第14圖所示之連接金 屬構件30之形狀。 第16圖為一部分正面圖,係用以說明關於本發明之Ic 卡的其他例。 第17圖為一部分斷面圖,係用以說明第16圖所示之平 面線圈10的端子10b(10a)之形狀。9 r 1244620 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (7) The end of the wire 11 in front of the child. Fig. 14 is a partial sectional view for explaining another example of the IC card of the present invention. Fig. 15 is a perspective view for explaining the shape of the connecting metal member 30 shown in Fig. 14. Fig. 16 is a partial front view for explaining another example of the Ic card of the present invention. Fig. 17 is a partial cross-sectional view for explaining the shape of the terminal 10b (10a) of the flat coil 10 shown in Fig. 16.

第18圖為一部分正面圖,係用以說明關於本發明之IC 卡的其他例。 第19圖為一部分斷面圖’係用以說明關於本發明之IC 卡的其他例。 第20圖為一部分正面圖,係用以說明關於本發明之IC 卡的其他例。Fig. 18 is a partial front view for explaining another example of the IC card of the present invention. Fig. 19 is a partial sectional view 'for explaining another example of the IC card of the present invention. Fig. 20 is a partial front view for explaining another example of the IC card of the present invention.

第21圖為一部分斷面圖,係用以說明第20圖所示之1C 卡。 第22圖為一部分正面圖,係用以說明關於本發明之IC 卡的其他例。Fig. 21 is a partial sectional view for explaining the 1C card shown in Fig. 20. Fig. 22 is a partial front view for explaining another example of the IC card of the present invention.

第23圖為一部分斷面圖,係用以說明第22圖所示之1C 卡。 第24圖為一部分斜視圖,係用以說明關於本發明之IC 卡的其他例。 第25圖為一部分斜視圖’係用以說明關於本發明之ic 本紙張尺度適用中國國家樣準(CNS ) A4規格(210X297公釐) I 裝 I n 訂 (請先閱讀背面之注意事項再填寫本頁) 10 1244620 A7 B7 五、發明説明(8 ) 卡的其他例。 第26圖為一部分正面圖’係用以說明關於本發明之ic 卡的其他例。 第27圖為一部分正面圖,係用以說明關於本發明之ic 卡之其他例。Fig. 23 is a partial sectional view for explaining the 1C card shown in Fig. 22. Fig. 24 is a partial perspective view for explaining another example of the IC card of the present invention. Figure 25 is a partial oblique view 'is used to explain the ic of the present invention. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) I installed I n order (Please read the precautions on the back before filling This page) 10 1244620 A7 B7 V. Description of invention (8) Other examples of cards. Fig. 26 is a partial front view 'for explaining another example of the IC card of the present invention. Fig. 27 is a partial front view for explaining another example of the IC card of the present invention.

第28圖為一部分斷面圖,係用以說明第27圖所示之1C 卡。 第29圖為一正面圖,係用以說明關於本發明之IC卡的 其他例。 第30(a)圖及第30(b)圖,係第29圖所示之1(:卡的部分 斷面圖。 第3 1圖為部分斷面圖’係用以說明關於本發明之ic卡 的其他形例。 第32圖為一部分正面圖,係用以說明關於本發明之IC 卡之其他變形例。 第3 3圖為一部分正面圖,係用以說明關於本發明之IC 卡的其他變形例。 經濟部智慧財產局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 第34圖為一部分斷面圖,係用以說明關於本發明之IC 卡的其他變形例。 第35 (a)圖為一部分平面圖,第35(b)圖為一部分斷面 圖,係分別用以說明關於本發明之1C卡的其他變形例。Fig. 28 is a partial sectional view for explaining the 1C card shown in Fig. 27. Fig. 29 is a front view for explaining another example of the IC card of the present invention. Figures 30 (a) and 30 (b) are 1 (: partial cross-sectional views of the card shown in Figure 29. Figure 31 is a partial cross-sectional view 'is used to explain the ic of the present invention Other examples of the card. Fig. 32 is a partial front view for explaining other modified examples of the IC card of the present invention. Fig. 33 is a partial front view for explaining other aspects of the IC card of the present invention. Variations. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). Figure 34 is a partial cross-sectional view illustrating other variations of the IC card of the present invention. Fig. 35 (a) is a partial plan view, and Fig. 35 (b) is a partial cross-sectional view, which are used to explain other modified examples of the 1C card of the present invention.

第36圖為一部分斷面圖,係用以說明關於本發明之IC 卡的其他變形例。 第37圖為一部分斜視圖,係用以說明關於本發明之IC 本紙張尺度朝巾關家縣(CNsyA4· ( 21GX297公釐)"----- 1244620 五、發明説明(9 卡的其他變形例。 第38(a)圖為一部分平面圖,第38(b)圖為一部分侧面 圖,係分別用以說明關於本發明之IC卡的其他變形例。 第39圖為一部分平面圖,係用以說明關於本發明 卡的其他變形例。 第40圖為一部分平面圖 的其他變形例。 第41圖為一部分斷面圖 卡。 第42圖為一部分平面圖 卡的其他變形例。 第43圖為一平面圖,係用以說明關於本發明之ic卡的 其他例。 第44圖係第43圖所示之ic卡的部分斷面圖。 第45圖,係使用第43圖所示之1(:卡的模組體4〇之平面 圖0Fig. 36 is a partial cross-sectional view for explaining another modified example of the IC card of the present invention. Figure 37 is a perspective view of a part of the paper, which is used to explain the IC of the present invention. The paper size of the paper is toward Jiajia County (CNsyA4 (21GX297 mm) " ----- 1244620 V. Description of the invention (9 other Modification Example: Fig. 38 (a) is a partial plan view, and Fig. 38 (b) is a partial side view, which are used to explain other modification examples of the IC card of the present invention. Fig. 39 is a partial plan view, which is used for The description is about another modification of the card of the present invention. Fig. 40 is another modification of a part of a plan view. Fig. 41 is a sectional view of a card. Fig. 42 is another modification of a plan view of a card. Fig. 43 is a plan view. It is used to explain other examples of the IC card of the present invention. Fig. 44 is a partial cross-sectional view of the IC card shown in Fig. 43. Fig. 45 is a model using the 1 (: card shown in Fig. 43) Plan view of group 40

之1C 係用以說明關於本發明 係用以說明第4〇圖所示 係用以說明關於本發明1C is used to explain the present invention. It is used to explain the figure.

之1C1C

之1C1C

之1C !if (請先閲讀背面之注意事項再填寫本頁) 裝 訂 經濟部智慧財產局員工消費合作社印製1C! If (Please read the precautions on the back before filling out this page) Binding Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

第46圖為一部分平面圖,係用以說明關於本發明之 卡的其他變形例。 第47(a)圖〜第47(e)圖為部分斷面圖,係顯示關於本 發明之IC卡的其他變形例之形成工程。 第48圖係該變形例之斜視圖。 第4 9圖’係使用禱封用樹脂之變形例的部分斷面圖。 第50圖為一平面圖,係用以說明習知之IC卡。 [用以實施發明之最佳形態] 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公董) 12 1244620 A7 B7 五、發明説明(1〇 第1圖係顯示本發明1c卡之一例的平面圖。於第i圖中 ,形成有矩形狀之平面線圈10。此平線線圈1〇,係由藉加 壓加工來形成的厚度80# m以上之導線u,在實質地同一 之平面上捲繞多數圈而成者。此平面線圈1〇,就全體而言 ,在同一平面上將導線丨丨捲繞多數圈而成者。在位置於這 種平面線圈10之線圈的内側及外側之端部,分別設有端子 i〇a、i〇b;而形成在厚度40〜50#m之半導體元件12且在 前述平面線H1G之線圈的内似外側,則分別設有電極端 子12a、12b。於該端子心、1〇b及該電極端子i2a、12种 ,對於線圈之内外方向形成同一側之端子係彼此電接著。 於第1圖所示之1C卡,在設有半導體元件12之平面線 圈10,如第2圖所示,形成有一將用來構成平面線圈1〇之 導線11曲折而成之凹部14 ;而在此凹部14内則配設有半導 體元件12。此導線11之曲折可藉加壓加工來進行。這種凹 部14,宜作成可將半導體元件12之全體***凹部14内之尺 寸。 又,於第1圖中,雖在矩形狀之平面線圈1〇之隅角部 間形成凹部14,但在平面線圈10之隅角部形成凹部14,在 此凹部14配設半導體元件12也可。 又,如第2圖之第1圖之ic卡之部分斷面圖所示,在跟 半V體元件12隔著間隙而設置之平面線圈1〇的端子、i〇b, 形成一施有碾壓加工之連接面16,以便與形成有半導體元 件12之電極端子12a、12b之形成面實質上成同一面。形成 有此連接面16之部分,係如第2圖所示,形成與半導體元 良紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) —Ι1Γ (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 經濟部智慧財產局員工消費合作社印製 13 1244620 五、發明説明(η ) 經濟部智慧財產局員工消費合作社印製 件12大致同一之厚度。 像這樣’第1圖及第2圖所示之叫,由於其平面線圈 10之端子l〇a、1Gb之連接面16、及半導體元件以電極端 子心、m為實質上同一之平面,所以可藉楔形接合法或 球接合法來施行金屬線接合。因此,如第2圖所示,在不 從平面線圈之面突出冑路之一部分下可藉I、白金或鋁製 之金屬線18、18,來電接平面線圈1〇之端子1〇a、i〇b,與 半導體元件12之電極端子i2a、12b。 又,平面線圈10和半導體元件12等,係如第2圖所示 ,被由聚氨酯樹脂或聚烯烴樹脂等所成之粘合劑層22^、 22b所夾入岔封著。此等聚氨酯樹脂或聚烯烴樹脂係形成 在由pvc等所成且在表面側印刷文字等藉以形成ic卡表背 側的樹脂薄膜2〇a、2Ob之内面側。 當製造第1圖及第2圖所示之1C卡時,最好使用第3圖 所示之框架F,作為平面線圈10。此框架F ,係將銅、鐵 、鋁等之金屬,或其合金等之金屬板加以加壓加工而成者 :在其互相平行之二條執60、60間,向執60之長向形成平 面線圈10、10……。在構成這種平面線圈10,1〇 •…之 線11中’最外周之導線lla被形成得比其他導線U粗大 且’平面線圈1 〇之導線1丨a,係用連結部62來與隋接著 平面線圈10之導線lla互相連結著。因此,可提高平面 圈1〇之各強度,且可提高框架F之搬運等時之處理性。 第3圖所示之框架f之平面線圈1〇,雖把其最外周 導線lla形成得比其他導線u更粗大,但把導線Ua作成粗 導 之 線 之 (請先閲讀背面之注意事項再填寫本頁) •裝. 、11 14 1244620Fig. 46 is a partial plan view for explaining another modification of the card of the present invention. Figures 47 (a) to 47 (e) are partial cross-sectional views showing the formation process of another modified example of the IC card of the present invention. Fig. 48 is a perspective view of the modification. Figures 4 and 9 'are partial cross-sectional views showing a modified example using a resin for prayer sealing. Fig. 50 is a plan view for explaining a conventional IC card. [The best form for implementing the invention] This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public director) 12 1244620 A7 B7 V. Description of the invention (1st picture 1 shows an example of the 1c card of the invention Plan view. In figure i, a rectangular planar coil 10 is formed. This flat wire coil 10 is a wire u having a thickness of 80 # m or more formed by pressing, and is rolled on a substantially identical plane. It is formed by winding a large number of turns. This planar coil 10 is formed by winding a plurality of turns of a wire 丨 丨 on the same plane as a whole. It is located at the inner and outer ends of the coil of such a planar coil 10 The terminals i0a and i0b are respectively provided, and the electrode elements 12a and 12b are respectively provided on the semiconductor element 12 formed in a thickness of 40 to 50 # m and on the inside and outside of the coil of the aforementioned plane line H1G. The terminal core, 10b, and the electrode terminals i2a, 12 are electrically connected to each other to form terminals on the same side in the inner and outer directions of the coil. The 1C card shown in FIG. 1 is provided on the plane where the semiconductor element 12 is provided. The coil 10 is formed as shown in FIG. The recessed portion 14 formed by bending the conducting wire 11 of the planar coil 10; and a semiconductor element 12 is arranged in the recessing portion 14. The turning of the conducting wire 11 can be performed by pressing. Such a recessed portion 14 should preferably be made into The size of the entire semiconductor element 12 inserted into the recessed portion 14. In the first figure, although the recessed portion 14 is formed between the corner portions of the rectangular planar coil 10, the recessed portion 14 is formed at the corner portion of the planar coil 10. It is also possible to arrange the semiconductor element 12 in the recessed portion 14. As shown in a partial cross-sectional view of the IC card in Fig. 2 and Fig. 1, a planar coil 1 is provided with a gap between the half V body element 12 and a gap. The terminals 〇 and 〇b form a connection surface 16 subjected to rolling processing so as to be substantially the same as the formation surface of the electrode terminals 12a and 12b on which the semiconductor element 12 is formed. The portion on which this connection surface 16 is formed As shown in Figure 2, the paper size and semiconductor Yuanliang paper are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) — Ι1Γ (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau Employee Cooperatives 13 124 4620 V. Description of the Invention (η) The thickness of printed parts 12 of the consumer cooperative of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs is approximately the same. As shown in the first and second figures, the terminals 10a of the flat coil 10 The 1Gb connection surface 16 and the semiconductor element have substantially the same plane as the electrode terminal core and m, so metal wire bonding can be performed by a wedge bonding method or a ball bonding method. Therefore, as shown in FIG. A part of the loop can be protruded from the surface of the planar coil. I, platinum or aluminum metal wires 18, 18 can be used to connect the terminals 10a, i0b of the planar coil 10, and the electrode terminal i2a of the semiconductor element 12. , 12b. Further, as shown in FIG. 2, the planar coil 10 and the semiconductor element 12 are sandwiched and sealed by adhesive layers 22 ^ and 22 b made of a polyurethane resin or a polyolefin resin. These polyurethane resins or polyolefin resins are formed on the inner surface sides of the resin films 20a and 2Ob made of PVC or the like and printing characters on the front side to form the front and back sides of the IC card. When manufacturing the 1C card shown in FIGS. 1 and 2, it is preferable to use the frame F shown in FIG. 3 as the planar coil 10. This frame F is made by pressing metal plates of metals such as copper, iron, and aluminum, or alloys of them: forming planes between the two 60 and 60 parallel to each other, Coils 10, 10 ... Among the wires 11 constituting such a planar coil 10, 10 • ..., the outermost conducting wire 11a is formed to be thicker than the other conducting wires U, and the conducting wire 1a of the “planar coil 10” is connected to the surface by a connecting portion 62. Then, the wires 11a of the planar coil 10 are connected to each other. Therefore, the strength of each of the plane rings 10 can be increased, and the rationality of the isochronous handling of the frame F can be improved. Although the planar coil 10 of the frame f shown in FIG. 3 has the outermost conducting wire 11a thicker than other conducting wires u, the conducting wire Ua is made into a thick conducting wire (please read the precautions on the back before filling (This page) • Installed, 11 14 1244620

、發明説明(I2 於其他導線11,以此狀態來形成1(^卡也可;或切斷連結部 62時’切斷最外周之導線11 a,作成與其他導線11同一粗 大也可。 又’為了更提高平面線圈10之強度,而用連結部來連 結該用來構成平面線圈1〇之導線U間也可。將此連結部, 在藉由形成在樹脂薄膜20a、20b(用來形成1C卡之表背面) 之枯合劑22a、22b夾入於内部前加以切斷,藉此可防止導 線11間之短路。 且說,對於銅、鐵、鋁等之金屬或其合金等之金屬板 施予钱刻加工,藉此也可獲得第3圖所示之框架F。藉餘 刻加工來取得之框架F,較之藉加壓加工來形成之平面線 圈之導線11,更可形成由細導線11所成之平面線圈1〇。 當使用第3圖所示之框架F來製造1C卡時,雖可在從 框架F切離之平面線圈1〇進行半導體元件12之裝載等,但 在不從框架F切離平面線圈1〇下進行半導體元件12之裝載 等為宜。此時,將半導體元件12裝載於形成在框架f之平 面線圈10之各個,使用接合裝置,藉金屬線18、18來搂合 平面線圈10之端子l〇a、l〇b及半導體元件12之電極端子12a 、12b。接著,藉在一面側形成有粘合劑層22a、22b之樹 脂薄膜20a、20b,將平面線圈1〇及半導體元件12等夾進密 封之後’切斷給定部分以便從框架F切離,藉此可獲得1C 卡。 就使用此金屬線之接合來說,楔形接合法由於可盡量 使金屬線18、18之膨大度(環路之大小)縮小而較為適宜。 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) IHJ (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 經濟部智慧財產局員工消費合作社印製 15 經濟部智慧財產局員工消費合作社印製 124462〇 A7 ----- B7 _ 五、發明説明⑴) ' 一 —- 這種楔形接合法,可使用第4圖所示之模形接合裝置來進 行。此楔形接合裝置,係作為半導體裝置之製造裝置而被 廣用。 依據使用這種楔形接合裝置之接合,在移動至要接合 ^端子(以下’稱為接合端子)之—方上方的楔子Μ之前端 #向斜方插通有一用夾子26來把持之金屬線18之前端部 (第4(a)圖)。此楔子24隨後下降,而將金屬線以之前端壓 定在連接面上(第4(b)圖)。 其次,使楔子24,一面向跟接合端子之一方實質地形 成同一平面之另一方接合端子之方向移動,一面打開夾子 % ’將金屬線18引導至另一方之接合端子之後(第4(c )圖) 在另方之接合端子之連接面,將金屬線18之前端壓定 在連接面上(第4(d)圖)。 其後,用夾子26來把持金屬線18並加以拉曳,切斷金 屬線18(第4(e)圖),完成接合操作。 重覆這種第4(a)〜第4(e)圖之一連操作,藉此可繼續 進行金屬線接合。 如依此楔形接合法,則如第4圖所示,由於用夾子26 來把持之金屬線18之前端部斜斜地插通於楔子24之前端部 ,所以將壓定前端於接合端子之一方的金屬線18引導至另 一方之接合端子時,可盡量地縮小金屬線18之膨大度(環 路之大小)。 因此’如第2圖所示,在不從平面線圈1〇之面突出環 路之一部分下,可藉金屬線18、18,來電接平面線圈1〇之 I--------jm- Μ衣-------IT------ (請先閲讀背面之注意事項再填寫本頁)2. Description of the invention (I2 is formed on the other conductors 11 in this state. 1 (^ card may also be used; or when the connection portion 62 is cut, the outermost conductor 11a is cut off and the same thickness as the other conductors 11 may be used.) 'In order to further increase the strength of the planar coil 10, a connection portion may be used to connect the wires U for forming the planar coil 10. The connection portion is formed by forming resin films 20a and 20b (for forming 1C card on the back of the surface) The dry mixture 22a, 22b is sandwiched before it is cut off, thereby preventing a short circuit between the wires 11. In addition, it is applied to metal plates such as copper, iron, aluminum and the like or metal alloys thereof. The frame F shown in Fig. 3 can also be obtained by engraving it. The frame F obtained by the extra engraving can form a thin wire more than the wire 11 of a planar coil formed by pressing. The planar coil 10 formed by 11 is used. When the 1C card is manufactured using the frame F shown in FIG. 3, although the semiconductor element 12 can be mounted on the planar coil 10 cut away from the frame F, but the The frame F is cut off from the planar coil 10 and the semiconductor element 12 is loaded. At this time, the semiconductor element 12 is mounted on each of the planar coils 10 formed in the frame f, and the terminals 10a and 10b of the planar coil 10 and the semiconductor element 12 are coupled by metal wires 18 and 18 using a bonding device. Electrode terminals 12a, 12b. Next, the resin film 20a, 20b having the adhesive layers 22a, 22b formed on one side is used to sandwich the planar coil 10 and the semiconductor element 12 and seal the predetermined portion so that By cutting away from the frame F, a 1C card can be obtained. As for the bonding using this metal wire, the wedge bonding method is more suitable because it can reduce the expansion degree (the size of the loop) of the metal wires 18 and 18 as much as possible. Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) IHJ (Please read the notes on the back before filling out this page) Binding and ordering Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 15 Intellectual Property of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Bureau 124462〇A7 ----- B7 _ V. Description of the invention ⑴) 'One --- This wedge-shaped joining method can be carried out using the die-shaped joining device shown in Figure 4. This wedge-shaped joining Device, It is widely used as a manufacturing device for semiconductor devices. According to the bonding using such a wedge-shaped bonding device, the wedge M front end # above the square to be moved to the terminal to be bonded (hereinafter referred to as a bonding terminal) is inserted obliquely. A front end of the metal wire 18 is held by a clip 26 (Fig. 4 (a)). This wedge 24 is then lowered and the metal wire is pressed against the connection surface with the front end (Fig. 4 (b)) Next, move the wedge 24 in a direction facing the other bonding terminal that substantially forms the same plane as one of the bonding terminals, and open the clip on one side% 'to guide the metal wire 18 behind the other bonding terminal (4 (c (Figure)) On the connection surface of the other joint terminal, press the front end of the metal wire 18 to the connection surface (Figure 4 (d)). Thereafter, the metal wire 18 is held by the clip 26 and pulled to cut the metal wire 18 (Fig. 4 (e)) to complete the joining operation. By repeating one of the operations of FIGS. 4 (a) to 4 (e), the wire bonding can be continued. According to this wedge-shaped bonding method, as shown in FIG. 4, the front end of the metal wire 18 held by the clip 26 is inserted obliquely to the front end of the wedge 24, so the front end of the crimp is placed on one of the bonding terminals. When the metal wire 18 is guided to the bonding terminal of the other side, the expansion degree (the size of the loop) of the metal wire 18 can be minimized as much as possible. Therefore, as shown in FIG. 2, under a part of the loop that does not protrude from the plane of the plane coil 10, the metal wire 18, 18 can be used to connect the plane coil 1 to the wire I -------- jm -M 衣 ------- IT ------ (Please read the precautions on the back before filling this page)

16 1244620 A7 一--------^z________ 五、發明説明(14 ) 端子l〇a、l〇b及半導體元件12之電極端子12a、12b。 第2圖所示之環路狀之金屬線18,係在籍由一面側形 成有粘合劑層22a、22b之樹脂薄脂2〇a、20b,夾入密封平 面線圈10及半導體元件12等時,有向粘合劑之流動'方向產 生金屬線18之環路狀部之變形,金屬線18之壓定部之剝離 、或金屬線18之切斷等,導致金屬線18與平面線圈之導線 11接觸之虞。若要防止這種環路狀之金屬線18之變形等, 則如第5圖所示,最好預先用樹脂15、ι5(尤其是…硬化樹 脂)來固定壓定在平面線圈10之端子1〇b及半導元件12之電 極端子12b的金屬線線18之壓定部。 又’金屬線18之接合除了上述之楔形接合法以外,也 可使用球接合法來進行接合。 第1圖及第2圖所示之1C卡,係為了電接平面線圈1〇之 端子10a、10b及半導體元件12之電極端子12a、12b,而用 金屬線18、18來接合。此半導體元件12,由於厚度為4〇〜 50#m左右之輕重量者,所以可用金屬線18、18充份支持 半導體元件12。 若只用金屬線18、18仍不足以支撐半導體元件12,而 在製造中產生問題時,如第6圖所示,將用來支持半導體 元件12之支持用金屬線25、25,設在與平面線圈1〇之導線 11間也可。此時,在半導體元件12之電極端子12a、12b之 形成面且成為平面線圈1 〇之外侧及内側之位置,設有用來 壓定支持用金屬線25、25之支持用金屬線墊片23a、23b。 又,於第6圖方面,雖設置二條之支持用金屬線25, 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) " — (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 經濟部智慧財產局員工消費合作社印製 17 1244620 五、 經濟部智慧財產局員工消費合作社印製 發明説明(15 ) 但’若用一條支持用金屬線25即可充份支持半導體元件!2 的話,只使用一條之支持用金屬線25也可。 (請先閲讀背面之注意事項再填寫本頁) 第1圖〜第6圖所示之平面線圈1〇的端子i〇a、1 〇b之連 接面16,只要為施有碾壓加工且與包含半導體元件12之電 極端子12a、12b的形成面之平面實質地或同一平面即可, 其形狀可為任意之形狀,但第1圖、第2圖及第6圖所示之 平面線圈之端子1 〇a、1 Ob,係以第7圖所示之端子形狀為 理想。如第7圖所示,施有端子i〇a(i〇b)之碾壓加工之連 接面16,係以保持導線11之寬度的狀態延伸,因而可充份 確保與伸展得大致平行於導線11之金屬線18之端部連接之 部份。 又,如第8圖所示,在設在電極端子12a、12b附近之 端子10a、l〇b間,進行平面線圈1〇之端子10a、i〇b與半導 體元件12之電極端子12a、12b之連接也可。其中電極端子 12a、12b係迂迴半導體元件12而位置在平面線圈1〇之内側 及外側。第8圖,係顯示用來連接兩者之金屬線丨8、丨8向 垂直於導線11之方向伸展之情況。 這種第8圖所示之平面線圈10之端子1〇a、1〇b,係以 第9圖所示著為理想,施有第9圖之端子1〇a(1〇b)之碾壓加 工之連接面16,係被設成寬度大於導線丨丨’從而可充份確 保一與向正交於導線11之方向伸展之金屬線18的端部連接 之部份。 當藉形成在樹脂薄膜20a、20b之一面侧的粘合劑層22a 、22b來夾入密封時,第2圖所示之環路狀金屬線18則有向 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公董) 18 ^44620 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(16 ) 點合劑之流動方向變形之虞。尤其是,構成平面線圈1〇之 導線11間之間隙狹窄時,變形之金屬線18則也有接觸於導 線11之虞。因此,為了緩和金屬線18附近之枯合劑之流動 ’而如第10圖所示,宜在位置於平面線圈10之内側及外側 之端子10a、10b,將壁部27形成在對於連接面16之導線η 側成為相反側之部分。當金屬線18被粘合劑層22a、22b爽 入密封時,可藉壁部27來緩和端子l〇a、10b附近之粘合劑 之流動,以防止與導線11接觸等之金屬線18之變形。 就這種第10圖所示之平面線圈10之端子l〇a、l〇b來說 ’宜使用第11圖所示者。在第11圖之端子l〇a、l〇b,形成 有一施有碾壓加工俾使導線11之端部以保持導線11之寬度 狀態延伸之連接面16,且在對於此連接面16之導線11側成 為相反側之部分,立設有壁部27。 可使用第12圖所示之平面線圈1〇之端子i〇a、i〇b,以 替代此第11圖所示之平面線圈10之端子l〇a、l〇b。在第12 圖之端子10a、10b,形成有一施有碾壓加工俾使導線η之 端部以保持導線11之寬度的狀態延伸之連接面16,且在此 連接面16之兩側形成有壁部27 a、27b。如依此種第12圖之 端子10a、1 Ob,則可充份確保一與被伸展得賂平行於導線 11之金屬線18的端部連接之部份,且當金屬線18被粘合劑 層22a、22b夾入密封時’緩和端子l〇a、l〇b附近之钻合劑 之流動,從而可防止與導線11接觸等之金屬線18之變形。 又,金屬線1 8縱使向導線11側方向變形,也可藉形成在導 線11側之壁部,來防止金屬線18與導線11之接觸。16 1244620 A7 I -------- ^ z________ 5. Description of the invention (14) Terminals 10a, 10b and electrode terminals 12a, 12b of the semiconductor element 12. The loop-shaped metal wire 18 shown in FIG. 2 is formed by sandwiching the sealed planar coil 10 and the semiconductor element 12 with the resin thin greases 20a and 20b formed with the adhesive layers 22a and 22b on one side. Deformation of the loop-shaped portion of the metal wire 18, the peeling of the crimping portion of the metal wire 18, or the cutting of the metal wire 18 in the direction of the flow of the adhesive causes the wire 18 and the flat coil wire 11 the risk of contact. In order to prevent deformation of the loop-shaped metal wire 18, as shown in FIG. 5, it is preferable to fix the terminal 1 fixed to the flat coil 10 with resin 15, ι5 (especially ... hardened resin) in advance. 〇b and the crimping portion of the metal wire 18 of the electrode terminal 12b of the semiconductor element 12. In addition to the above-mentioned wedge bonding method, the metal wire 18 may be bonded by a ball bonding method. The 1C card shown in Figs. 1 and 2 is connected with metal wires 18 and 18 for electrically connecting the terminals 10a and 10b of the planar coil 10 and the electrode terminals 12a and 12b of the semiconductor element 12. Since this semiconductor element 12 has a light weight of about 40-50 m, the metal element 18 can be used to fully support the semiconductor element 12. If only the metal wires 18 and 18 are not enough to support the semiconductor element 12, and when a problem occurs during manufacturing, as shown in FIG. 6, the supporting metal wires 25 and 25 for supporting the semiconductor element 12 are provided in The lead wires 11 of the planar coil 10 may be used. At this time, on the formation surfaces of the electrode terminals 12a and 12b of the semiconductor element 12 and on the outside and inside of the planar coil 10, support wire spacers 23a for supporting the support wires 25, 25 are provided. 23b. In terms of Figure 6, although two supporting metal wires 25 are provided, this paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) " — (Please read the precautions on the back before filling this page ) Assembled and printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 17 1244620 V. Printed by the Consumers’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (15) But if you use a support metal wire 25, you can fully support semiconductor components !! If it is 2, only one supporting metal wire 25 may be used. (Please read the precautions on the back before filling this page.) The connection surfaces 16 of the terminals i0a and 10b of the flat coil 10 shown in Figures 1 to 6 are provided as long as they are rolled and processed. The plane including the formation surfaces of the electrode terminals 12a and 12b of the semiconductor element 12 may be substantially the same or the same plane, and the shape may be any shape. However, the planar coil terminals shown in Figs. 1, 2, and 6 10a and 1 Ob are ideally the terminal shapes shown in FIG. As shown in FIG. 7, the rolled connection surface 16 provided with the terminal i〇a (i〇b) is extended to maintain the width of the wire 11, so that it can be sufficiently ensured and extended approximately parallel to the wire. 11 is connected to the end of the metal wire 18. As shown in FIG. 8, between the terminals 10 a and 10 b provided near the electrode terminals 12 a and 12 b, the terminals 10 a and 10 b of the planar coil 10 and the electrode terminals 12 a and 12 b of the semiconductor element 12 are connected. Connection is also available. Among them, the electrode terminals 12a and 12b are bypassed to the semiconductor element 12 and are positioned inside and outside the planar coil 10. FIG. 8 shows a case where the metal wires 丨 8 and 丨 8 for connecting the two are extended in a direction perpendicular to the wire 11. The terminals 10a and 10b of the planar coil 10 shown in FIG. 8 are ideally shown in FIG. 9, and the terminals 10a (10b) of FIG. 9 are rolled. The processed connection surface 16 is set to have a width larger than that of the conducting wire 丨 ′, so as to sufficiently ensure a portion connected to the end of the metal wire 18 extending in a direction orthogonal to the conducting wire 11. When the adhesive layers 22a and 22b formed on one side of the resin films 20a and 20b are used for sandwiching and sealing, the loop-shaped metal wire 18 shown in FIG. 2 applies the Chinese national standard (CNS) to this paper standard. ) A4 specification (210X297 public director) 18 ^ 44620 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of invention (16) The flow direction of the point mixture may be deformed. In particular, when the gap between the conductive wires 11 constituting the planar coil 10 is narrow, the deformed metal wires 18 may come into contact with the conductive wires 11. Therefore, as shown in FIG. 10, in order to ease the flow of the depleting agent near the metal wire 18, it is preferable to form the wall portion 27 at the terminals 10a and 10b located inside and outside the planar coil 10 with respect to the connection surface 16. The lead n side becomes a portion on the opposite side. When the metal wire 18 is sealed by the adhesive layers 22a and 22b, the flow of the adhesive near the terminals 10a and 10b can be eased by the wall portion 27 to prevent the metal wire 18 from contacting the wire 11 and the like. Deformation. As for the terminals 10a and 10b of the planar coil 10 shown in FIG. 10, the ones shown in FIG. 11 are preferably used. At the terminals 10a and 10b in FIG. 11, a connecting surface 16 is formed by applying a rolling process so that the end portion of the conductive wire 11 extends to maintain the width of the conductive wire 11, and the conductive wire for the connecting surface 16 is formed. The 11 side becomes a part on the opposite side, and a wall portion 27 is erected. Instead of the terminals 10a and 10b of the planar coil 10 shown in FIG. 11, the terminals i0a and i0b of the planar coil 10 shown in FIG. 12 may be used. At the terminals 10a and 10b of FIG. 12, a connecting surface 16 is formed by applying a rolling process so that the end portion of the wire η is extended to maintain the width of the wire 11 and walls are formed on both sides of the connecting surface 16. Parts 27a, 27b. According to the terminals 10a and 1 Ob of FIG. 12, it is sufficient to ensure a part connected to the end of the metal wire 18 that is stretched parallel to the wire 11, and when the metal wire 18 is adhesive When the layers 22a and 22b are sandwiched and sealed, the flow of the biting agent near the terminals 10a and 10b is eased, so that the deformation of the metal wire 18 such as contact with the lead wire 11 can be prevented. In addition, the metal wire 18 may be deformed in the direction of the guide wire 11 side, and a wall portion formed on the guide wire 11 side may be used to prevent the metal wire 18 from contacting the lead wire 11.

(請先閱讀背面之注意事項再填寫本頁) •裝· 、^τ 4 -19 - 1244620 A7 B7 五、發明説明(17 ) "~~~ (請先閲讀背面之注意事項再填寫本頁) 第7圖、第9圖、第n圖及第12圖所示之端子(1〇a)、(i〇b) ,均可藉著對於第13圖所示的用來構成平面線圈1〇之導線 11施予碾壓加工而加以形成。這種藉碾壓加工來形成之端 子10a、10b,由於用金屬線18來接合,所以為了使跟金屬 線18之連接確實無誤,而宜對於端子1〇&、1〇b之連接面16 施予鐘金或鑛Ιε。 不過,由於端子l〇a、10b形成複雜之形狀,所以難以 只對其連接面16施加鍍金或鍍鈀。因此如第13圖所示,宜 在要施行導線11端部之碾壓加工之部份28,預先施予錢金 或鍍鈀。預先施行之鍍金或鍍鈀,則在碾壓加工時被延展 ,因而可實質地覆蓋端子l〇a、1〇1)之連接面16。 以上申述過來的1C卡,雖使用具有優異導電性之金、 白金或鋁製之金屬線1 8、18,來進行平面線圈1〇之綠子1〇a 、10b與半導體元件12之電極端子12a、12b的連接,但金 屬線18、18纖細而具有高於用來構成平面線圈丨〇之導線夏工 的電阻值。因此,可能無法將因電磁感應而在平面線圈1〇 產生之電力充份輸電給半導體元件12。 經濟部智慧財產局員工消費合作社印製 為了解除此可能性’而如第14圖所示,宜用锻帶狀連 接金屬構件30來連接平面線圈1〇之端子與半導體 元件12之電極端子12a、12b。 此锻帶狀之連接金屬構件3 〇,係以略等於導線11寬之 寬度’且用具有良好導電性之銅、金、鋁等之金屬來形成 。這種連接金屬構件30雖可為平板,但如第15圖所示,中 途形成有圓頂狀部30者較為理想。這是因為,可藉平面線 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公慶) ' --- -20 - 1244620 A7 B7 五、發明説明(I8 圈10與半導體元件12之熱膨脹率差,和1C卡之彎曲等,來 吸收產生於平面線圈10之應力等之故。此第15圖所示之連 接金屬構件30,係將其兩端部3〇a、30b形成平坦,且將之 連接至平面線圈1〇之端子l〇a( 10b)及半導體元件12之電極 端子 12a(12b)。 在此,若連接金屬構件30為銅製時,可對連接金屬構 件3 0之連接施予鍍金、鍍錫、或焊劑電鍍,同時對半導體 元件12之電極端子12a、nb及平面線圈10之端子i〇a、10b 施予錢金’把要連接之兩端子加以加熱·麼定,藉此使用 共晶合金來進行兩端子連接。一方面,若連接金屬構件3〇 為金或紹製時,即使不對於連接金屬構件30之連接面施行 金屬電鑛’也可進行兩端子之連接。又,也可使用導電性 粘合劑來進行兩端子之連接。 又’不用說,可將圓頂狀部3〇c作成不從平面線圈1〇 突出之大小。 更且’如第16圖所示,直接接合端子1〇b(1〇a)與電極 端子12b(12a),藉此也可降低平面線圈1〇之端子1〇a、i〇b 與半導體元件12之電極端子12a、12b的連接部的電阻值。 這種接合’則藉著將施有鍍金之半導體元件12之電極端子 12a、12b及施有錢金、鐘錫、或焊劑電鍍等之金屬電鍍的 平面線圈端子l〇a、l〇b之電極端子12a、12b,加以加熱加 壓以及共晶結合來進行。又,也可使用導電性粘合劑來進 行兩端子之連接。 此時’為了使端子l〇b(i〇a)與電極端子i2b(12a)之接 本紙張尺度適用中國國家標準(CNS)八峨格(210x297公慶) (請先閲讀背面之注意事項再填寫本頁) .裝- 訂 經濟部智慧財產局員工消費合作社印製 21 五、 經濟部智慧財產局員工消費合作社印製 l24462〇 發明説明(19 合確貫無誤,而如第17圖所示,宜在端子i〇b(i〇a)之連接 面’形成一抵觸於半導體元件12之電極端子12b(12a)而被 磨平之突起部32。 如第16圖所示,若半導體元件12之電極端子12b、Ua 與平面線圈10之端子l〇a、l〇b直接接合時,因外加於1€卡 之幫曲和熱等之應力而產力於平面線圈10之應力,則集中 於兩端子之連接部,從而兩端子之連接可能發生剝離。若 要緩和應力之對於該兩端子之集中的話,最好在平面線圈 10之端子l〇a、10b之附近,形成一用來吸收施加於平面線 圈1 〇之應力的應力吸收部。 就此種應力吸收部來說,第1 8圖所示彎曲部34由於可 用加壓加工等來輕易形成而較為理想。此彎曲部34,可藉 考曲部34之伸縮來吸收外加於平面線圈1〇之應力,,因而可 緩和外加於兩端子之連接部的應力。 又,形成在平面線圈1 〇之凹部14 ,除了彎折導線11來 形成以外’利用導線丨丨之厚度大於半導體元件12之事實, 而如第19圖所示,在導線丨丨之中途施予碾壓加工以形成凹 部14也可。此時,可使平面線圈1〇及半導體元件12,位置 於1C卡之厚度方向的中央部,且可使1(:卡形成為薄厚。又 ’在這時候’將半導體元件12及金屬線18,收容於導線1]t 之厚度七之範圍内。 又’如第19圖所,施有碾壓加工之導線丨丨之部分雖變 成比其他導線11還薄,但導線丨丨本身之電阻值並不會有問 題0 (請先閱讀背面之注意事項再填寫本頁) •裝· .4 22 1244620 Α7 Β7 五、 經濟部智慧財產局員工消費合作社印製 發明説明(2〇 (請先閲讀背面之注意事項再填寫本頁) 迄今所申述之1C卡,雖對於構成平面線圈1〇之導線u 施予彎折或礙壓加工以形成凹部14,但如第及第21圖 所示,可將導線11之端部附近向1(3卡之厚度方向彎折之同 時,對别端部施予碾壓加工,藉此可在平面線圈10不形成 凹部14下,使平面線圈10之端子10a、1〇b之連接面16之各 個成為,與包含半導體元件12之電極端子12a、12b之形成 面的平面實質地同一之平面。 於此第20圖及第21圖方面,當要使用金屬線18、18來 接合平面線圈10之端子l〇a、l〇b與半導體元件12之電極端 子12a、12b時,不粘接該通過半導體元件12上面之平面線 圈10之導線11與半導體元件12即進行接合。反之,如第22 圖及第23圖所示,最好藉由粘合劑層36來粘接通過半導體 元件12上面之平面線圈1〇之導線u與半導體元件12之後, 將平面線圈10之端子l〇a、l〇b與半導體元件12之電極端子 12a、12b加以金屬線接合。用枯合劑層36來钻接平面線圈 10之導線11與半導體元件12,藉此可輕易進行金屬線接合 時之定位。 又,於第1圖〜第19圖,也同樣,宜藉粘合劑層36來 粘接平面線圈10之導線11與半導體元件丨2之後,連接平面 線圈10之端子10a、10b及半導體元件12之電極端子12a、12b ο 雖於第6圖,為了支持半導體元件12,而將支持用金 屬線25架設在半導體元件12與平面線圈1〇之導線1丨間,但 若導線11之寬度小時,可能不易將支持用金屬線15之一端 本紙張尺度適用中國國家標準(CNS ) Α4規格(210 X 297公釐) 23 Ϊ244620 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(21 ) 接合於導線11。此時,如第24圖所示,最好擴大施有礙壓 加工之平面線圈10的端子1〇b(1〇a)之連接面,將跟半導體 元件12之電極端12b(12a)連接之金屬線18、及跟支持用墊 片23b(23a)連接之支持用金屬線25,接合於平面線圈1〇之 端子10b(10a)。在這種平面線圈1〇之端子i〇b(l〇a),形成 有用來***端部之:7字形凹部33 ;該端部具有半導體元件 12之電極端子I2b(12a)及支持金屬線用墊片23b(23a)。於 此凹部33,***半導體元件12之端部,藉此使端子i〇b(i〇a) 沿著半導體元件12端部的端緣延伸,以便包圍半導體元件 12之端部;此半導體元件12設有一用來跟平面線圈1〇之端 子10b(10a)連接之電極端子i2b(12a)。因此,可輕易進行 半導體元件之定位,且可將金屬線18及支持用金屬線25之 長度縮短。此時,也同樣,宜藉粘合劑層36(第22圖、第23 圖)來粘接半導體元件12與平面線圈10之導線11之後,再 接合金屬線18及支持用金屬線25。 更且,將金屬線18及支持用金屬線25伸展成與導線η 平行且成一直線狀’藉此可輕易進行兩金屬線之接合,且 可高度平衡地支持半導體元件。 又,於第10圖中,當欲藉粘合劑層22a、22b來夾住金 屬線18時,為了緩和平面線圈10之端子10b(1〇a)附近的枯 合劑之流動以防止金屬線18之變形,而在平面線圈10之端 子10a、10b之側面形成有壁部27。反之,若要緩和半導體 元件12之電極端子I2b( 12a)附近的粘合劑之流動以防止金 屬線18之變形的話,最好如第2 5圖所示,在形成在通過半(Please read the precautions on the back before filling in this page) • Installation · ^ τ 4 -19-1244620 A7 B7 V. Description of the invention (17) " ~~~ (Please read the precautions on the back before filling in this page ) The terminals (10a), (i0b) shown in Figure 7, Figure 9, Figure n, and Figure 12 can be used to form the planar coil 1 shown in Figure 13. The lead 11 is formed by laminating. Since the terminals 10a and 10b formed by lamination processing are joined by the metal wire 18, in order to ensure that the connection with the metal wire 18 is correct, it is suitable to connect the terminal 10 and the connection surface 16 of the 10b. Administered to bell gold or mine Ιε. However, since the terminals 10a and 10b have complicated shapes, it is difficult to apply gold plating or palladium plating to only the connection surface 16. Therefore, as shown in FIG. 13, it is preferable to apply gold or palladium plating in advance to the portion 28 where the end of the wire 11 is to be rolled. The gold plating or palladium plating performed in advance is stretched during the laminating process, so that it can substantially cover the connection surface 16 of the terminals 10a, 101). The 1C card described above uses gold, platinum, or aluminum wire 18, 18, which has excellent conductivity, to perform the green coils 10a, 10b of the planar coil 10, and the electrode terminals 12a of the semiconductor element 12. , 12b, but the metal wires 18, 18 are slender and have a resistance value higher than the summer resistance of the wire used to form the planar coil. For this reason, the electric power generated in the planar coil 10 due to electromagnetic induction may not be able to be sufficiently transmitted to the semiconductor element 12. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in order to eliminate this possibility, as shown in FIG. 14, it is suitable to connect the terminal of the planar coil 10 and the electrode terminal 12 a of the semiconductor element 12 with a forged strip-shaped connection metal member 30. 12b. This forged strip-shaped connecting metal member 30 is formed with a metal having a width that is slightly equal to the width of the wire 11 'and is made of a metal such as copper, gold, aluminum, or the like having good conductivity. Although the connection metal member 30 may be a flat plate, as shown in Fig. 15, it is preferable that the dome-shaped portion 30 is formed halfway. This is because the size of the paper can be adapted to the Chinese National Standard (CNS) A4 specification (210X297 public holiday) by the plane line. '--- -20-1244620 A7 B7 V. Description of the invention (The thermal expansion coefficient of I8 ring 10 and semiconductor element 12 Difference, and the bending of the 1C card to absorb the stress and the like generated in the planar coil 10. The connecting metal member 30 shown in FIG. 15 is formed by flattening both ends 30a and 30b of the connecting member 30 and The terminal 10a (10b) connected to the planar coil 10 and the electrode terminal 12a (12b) of the semiconductor element 12. Here, if the connection metal member 30 is made of copper, the connection to the connection metal member 30 may be given. Gold plating, tin plating, or flux plating, while applying electrode gold to the electrode terminals 12a, nb of the semiconductor element 12 and the terminals i0a, 10b of the planar coil 10 'heat the two terminals to be connected. The eutectic alloy is used for two-terminal connection. On the one hand, if the connecting metal member 30 is made of gold or stainless steel, the two-terminal connection can be performed even if no metal ore is applied to the connecting surface of the connecting metal member 30. , Can also use conductive adhesives The two terminals are connected. Needless to say, the dome-shaped portion 30c can be made to a size that does not protrude from the planar coil 10. Furthermore, as shown in FIG. 16, the terminal 10b (1〇 is directly connected a) With the electrode terminal 12b (12a), the resistance value of the connection portion between the terminals 10a, i0b of the planar coil 10 and the electrode terminals 12a, 12b of the semiconductor element 12 can also be reduced. By the electrode terminals 12a, 12b of the gold-plated semiconductor element 12 and the metal coil-plated planar coil terminals 10a, 10b of gold, bell tin, or solder plating, Heating and pressurization and eutectic bonding are performed. Alternatively, a conductive adhesive may be used to connect the two terminals. At this time, in order to make the terminal 10b (ioa) and the electrode terminal i2b (12a) The paper size applies to the Chinese National Standard (CNS) Baeg (210x297). (Please read the notes on the back before filling out this page.) Packing-Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives 21 V. Economy Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Justice It is true and correct, and as shown in FIG. 17, it is preferable to form a protruding portion 32 which is flattened against the electrode terminal 12 b (12 a) of the semiconductor element 12 on the connection surface 'of the terminal i 0b (ioa). As shown in FIG. 16, if the electrode terminals 12b, Ua of the semiconductor element 12 and the terminals 10a, 10b of the planar coil 10 are directly bonded, it is produced due to the stress applied to the 1 € card and heat and the like. The stress applied to the planar coil 10 is concentrated on the connection portion between the two terminals, so that the connection between the two terminals may be peeled off. In order to reduce the concentration of stress on the two terminals, it is preferable to form a stress absorbing portion for absorbing the stress applied to the planar coil 10 near the terminals 10a and 10b of the planar coil 10. For such a stress absorbing portion, the bent portion 34 shown in Fig. 18 is preferable because it can be easily formed by press working or the like. The bent portion 34 can absorb the stress applied to the planar coil 10 by the expansion and contraction of the bent portion 34, so that the stress applied to the connection portion of the two terminals can be relaxed. In addition, the recessed portion 14 formed in the planar coil 10 is formed by bending the conducting wire 11 'using the fact that the thickness of the conducting wire 丨 丨 is larger than that of the semiconductor element 12, and as shown in FIG. 19, it is given in the middle of the conducting wire 丨 丨Rolling may be performed to form the recessed portion 14. At this time, the planar coil 10 and the semiconductor element 12 can be positioned at the central portion in the thickness direction of the 1C card, and the 1 (: card can be formed to be thin and thick. At this time, the semiconductor element 12 and the metal wire 18 are also formed. Contained within the range of the thickness of the lead 1] t. Also, as shown in FIG. 19, although the part of the conductor subjected to the rolling process becomes thinner than other leads 11, the resistance value of the lead itself itself There will be no problem 0 (please read the precautions on the back before filling out this page) • Installation · .4 22 1244620 Α7 Β7 V. Printed Invention Description by the Employee Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs (2〇 (Please read the back first) Please note this page before filling in this page) Although the 1C card stated so far, the wires u constituting the flat coil 10 are bent or hindered to form the recesses 14, but as shown in Figures 21 and 21, When the vicinity of the end portion of the wire 11 is bent toward 1 (three-card thickness direction), the other end portion is subjected to rolling processing, thereby making it possible to make the terminal 10a, Each of the connection surfaces 16 of 10b becomes the same as the semiconductor device 1 The planes on which the electrode terminals 12a and 12b of 2 are formed are substantially the same plane. Here, in FIGS. 20 and 21, when the wires 10 and 18 are used to join the terminals 10a and 10 of the planar coil 10. b and the electrode terminals 12a and 12b of the semiconductor element 12, the wires 11 passing through the planar coil 10 on the semiconductor element 12 and the semiconductor element 12 are not bonded. On the contrary, as shown in Figs. 22 and 23, It is preferable to bond the wires u passing through the planar coil 10 on the semiconductor element 12 and the semiconductor element 12 with the adhesive layer 36, and then connect the terminals 10a and 10b of the planar coil 10 to the electrodes of the semiconductor element 12. The terminals 12a and 12b are bonded with a metal wire. The conductive layer 11 of the planar coil 10 and the semiconductor element 12 are drilled with a desiccant layer 36, so that the positioning during metal wire bonding can be easily performed. Also, in FIGS. 1 to 19 Similarly, it is preferable to bond the wires 11 of the planar coil 10 and the semiconductor element 2 by the adhesive layer 36, and then connect the terminals 10a, 10b of the planar coil 10 and the electrode terminals 12a, 12b of the semiconductor element 12 Figure 6 to support semiconductor elements 12 and the supporting metal wire 25 is erected between the semiconductor element 12 and the conducting wire 1 of the planar coil 10, but if the width of the conducting wire 11 is small, it may not be easy to apply one end of the supporting metallic wire 15 to the Chinese paper standard. (CNS) A4 size (210 X 297 mm) 23 Ϊ244620 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (21) Attached to the wire 11. At this time, as shown in Figure 24, it is best Expand the connection surface of the terminal 10b (10a) of the planar coil 10 which is prevented from being pressed, and connect the metal wire 18 connected to the electrode terminal 12b (12a) of the semiconductor element 12 and the support pad 23b ( 23a) The supporting support metal wire 25 is bonded to the terminal 10b (10a) of the planar coil 10. A terminal i0b (10a) of such a planar coil 10 is formed with a 7-shaped recess 33 for inserting an end portion; the end portion includes an electrode terminal I2b (12a) of the semiconductor element 12 and a support wire. Spacer 23b (23a). Inserting the end of the semiconductor element 12 in this recess 33, so that the terminal i0b (ioa) extends along the edge of the end of the semiconductor element 12 so as to surround the end of the semiconductor element 12; this semiconductor element 12 An electrode terminal i2b (12a) is provided for connecting to the terminal 10b (10a) of the planar coil 10. Therefore, the positioning of the semiconductor element can be easily performed, and the lengths of the metal wires 18 and the supporting metal wires 25 can be shortened. At this time, similarly, it is preferable to bond the semiconductor element 12 and the wire 11 of the planar coil 10 with the adhesive layer 36 (Figs. 22 and 23), and then bond the metal wire 18 and the supporting metal wire 25. Furthermore, by extending the metal wire 18 and the supporting metal wire 25 in parallel with the conductive wire η and forming a straight line ', the two metal wires can be easily joined, and the semiconductor element can be supported in a highly balanced manner. In FIG. 10, when the metal wire 18 is to be clamped by the adhesive layers 22a and 22b, the flow of the desiccant near the terminal 10b (10a) of the planar coil 10 is eased to prevent the metal wire 18 It deforms, and the wall part 27 is formed in the side surface of the terminals 10a and 10b of the planar coil 10. On the other hand, if the flow of the adhesive near the electrode terminal I2b (12a) of the semiconductor element 12 is to be moderated to prevent the deformation of the metal wire 18, it is preferable to form it in the passage half as shown in Fig. 25.

(請先閱讀背面之注意事項再填寫本頁) 裝·(Please read the precautions on the back before filling this page)

-、1T d 1244620 A7 B7 五、發明説明(22 ) "~~~ (請先閲讀背面之注意事項再填寫本頁) 導體元件12上面之導線11中途的突出部μ,形成一供半導 體元件12之電極端子12b(12a)位置於内部之u字形部4〇。 若形成這種突出部38以用來保護金屬線18時,就平面線圈 之端子10b(10a)來說,以第9圖所示之端子1〇b(1〇a)較為適 宜。此端子10b(10a),由於施有碾壓加工之連接面16之寬 度大於導線11,而可充分確保一與向正交於導鍊n之方向 伸展之金屬線1 8的端部連接之部位。 更且,如第25圖所示之場合,若如第5圖所示,用樹 脂15、15(尤其是uv硬化樹脂)來預先固定被壓定在平面線 圈10之端子10b及半導體元件JL2>之電極端子12b的金屬線18 之壓定部,則在防止金屬線18之變形上,更具效果。 又,第25圖也同樣宜用粘合劑層36來粘接半導體元件 12與平面線圈1〇之導線11之後,再接合金屬線18。 經濟部智慧財產局員工消費合作社印製 關於以上1C卡,雖就用來形成平面線圈1〇之導線 厚度大於半導體元件件12之情形進行了說明,但如第26圖 所示,將半導體元件12配設於平面線圈12,以便電極端子 12a、12b之形成面位置於導線1丨侧,不必在平面線圈1〇之 端子l〇a、l〇b施行碾壓加工等,只用金屬線18、18來連接 半導體元件12之電極端子12a、12b以製作1C卡也可。此時 ’金屬線18、18之環路之一部分雖有可能從導線丨丨突出, 但突出量只是一點而已。因此,可藉形成在樹脂薄膜2〇a 、20b之一面侧的粘合劑層22a、22b來充分密封金屬線18 、18,密封時之變形也不成為問題。 又’為了盡量地使金屬線18、18之環路變小,同時使 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公爱) 25 I244620 A7 - --—~_―― 五、發明説明(23 ) 金屬線18、18之接合變為容易,而如第27圖所示,宜將形 成得比導線11之寬度更寬之平面線圈1〇之端子1〇a、1〇b , 藉粘合層36來粘接於半導體元件12之電極端子12a、12b附 近之後,用金屬線18、18來連接電極端子12&、12b。此金 屬線18,如第28圖所示,較之第26圖所示之金屬線18,可 作成更小之環路,從而可使形成在用來密封金屬線18等的 樹脂薄膜20a、20b—面側的粘合劑層22a、22b變薄。 像這樣,藉粘合劑層36將平面線圈1〇之端子1〇a、1〇b 粘接於半導體元件12時,為了吸收外加於平面線圈1〇之應 力以防止兩端子之接合被剝離,而將第18圖所示之彎曲部 34形成在平面線圈1〇之i〇a、附近之導線η也可。 又’不用說’透過粘合劑層36將半導體元件12連接於 一通過半導體元件12之電極端子12a、i2b形成面的平面線 圈之導線11也可。 於第29圖’說明跟第1圖所示之ic卡不同之地方。 ό又在凹部14(第30圖)之半導體元件12,係在成凹部14 底面之導線11上,載置一對於其電極端12a、12b之形成面 成為背面側之平面。此半導體元件12,雖可單純載置在導 線Π上,但使用粘合劑來粘接於導線丨丨,藉此可使半導體 元件12之電極端子12a、12b之定位等輕易進行而輕為適宜。 第30(a)圖係將比半導體元件12之厚度更深之凹部14 ’形成於平面線圈10之導線11的例者。依此例,為了使平 面線圈10之端子10b(10a)之連接面16跟半導體元件12之電 極端子12a、12b之形成面實質地成同一面,而對於平面線 本紙張尺度適用巾關家縣(CNS ) A4· ( 2lGx297/>慶) - (請先閲讀背面之注意事項再填寫本頁) •裝·-, 1T d 1244620 A7 B7 V. Description of the invention (22) " ~~~ (Please read the precautions on the back before filling in this page) The protruding part μ of the conductor 11 on the conductor element 12 forms a semiconductor element for the semiconductor element The electrode terminals 12b (12a) of 12 are located at the inner U-shaped portion 40. If such a protruding portion 38 is formed to protect the metal wire 18, the terminal 10b (10a) of the planar coil is preferably the terminal 10b (10a) shown in Fig. 9. This terminal 10b (10a), because the width of the connecting surface 16 subjected to the rolling process is larger than that of the wire 11, can sufficiently ensure a portion connected to the end of the metal wire 18 extending in a direction orthogonal to the guide chain n . Furthermore, as shown in FIG. 25, if shown in FIG. 5, the terminals 10b and the semiconductor element JL2 pressed to the planar coil 10 are fixed in advance by resins 15, 15 (especially UV curing resin). The crimping portion of the metal wire 18 of the electrode terminal 12b is more effective in preventing the deformation of the metal wire 18. In Fig. 25, it is also preferable to bond the semiconductor element 12 and the lead wire 11 of the planar coil 10 with the adhesive layer 36, and then the metal wire 18 is bonded. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the above 1C card. Although the thickness of the wire used to form the planar coil 10 is larger than that of the semiconductor element 12, the semiconductor element 12 is shown in FIG. 26. It is arranged on the plane coil 12 so that the formation surfaces of the electrode terminals 12a and 12b are located on the side of the lead wire 1. It is not necessary to perform a rolling process on the terminals 10a and 10b of the plane coil 10, and only the metal wires 18, 18 may be used to connect the electrode terminals 12a and 12b of the semiconductor element 12 to make a 1C card. At this time, although a part of the loop of the metal wires 18 and 18 may protrude from the conducting wire 丨 丨, the amount of protrusion is only a little. Therefore, the metal wires 18 and 18 can be sufficiently sealed by the adhesive layers 22a and 22b formed on one side of the resin films 20a and 20b, and deformation during sealing is not a problem. Also 'in order to make the loop of the metal wires 18 and 18 as small as possible, and at the same time to make this paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) 25 I244620 A7---- ~ _—— 5 Explanation of the invention (23) The joining of the metal wires 18 and 18 becomes easy, and as shown in FIG. 27, the terminals 10a and 10b of the flat coil 10 formed wider than the width of the wire 11 should be formed. After bonding to the vicinity of the electrode terminals 12a and 12b of the semiconductor element 12 by the adhesive layer 36, the electrode terminals 12 & and 12b are connected with the metal wires 18 and 18. As shown in FIG. 28, this metal wire 18 can be formed into a smaller loop than the metal wire 18 shown in FIG. 26, so that the resin films 20a and 20b used to seal the metal wire 18 and the like can be formed. -The pressure-sensitive adhesive layers 22a and 22b on the surface side become thin. In this manner, when the terminals 10a and 10b of the planar coil 10 are bonded to the semiconductor element 12 by the adhesive layer 36, in order to absorb the stress applied to the planar coil 10 to prevent the two terminals from being peeled off, Alternatively, the bent portion 34 shown in FIG. 18 may be formed on the plane coil 10 and the conductive wire n in the vicinity. It is needless to say that the semiconductor element 12 may be connected to the lead wire 11 of a planar coil formed by the electrode terminals 12a, i2b of the semiconductor element 12 through the adhesive layer 36. The difference from the IC card shown in FIG. 1 is described in FIG. 29 '. The semiconductor element 12 in the recessed portion 14 (Fig. 30) is attached to the conductive wire 11 formed on the bottom surface of the recessed portion 14, and a plane for forming the electrode terminals 12a and 12b on the back side is placed. Although the semiconductor element 12 can be simply placed on the lead wire Π, an adhesive is used to adhere to the lead wire, thereby allowing the positioning of the electrode terminals 12a and 12b of the semiconductor element 12 to be performed easily and lightly. . FIG. 30 (a) shows an example in which a recess 14 'deeper than the thickness of the semiconductor element 12 is formed on the lead 11 of the planar coil 10. As shown in FIG. According to this example, in order to make the connecting surface 16 of the terminal 10b (10a) of the planar coil 10 and the forming surface of the electrode terminals 12a, 12b of the semiconductor element 12 substantially the same, the paper size of the flat wire is suitable for the Jiaguan County. (CNS) A4 · (2lGx297 / > Qing)-(Please read the precautions on the back before filling in this page) • Installation ·

、1T 經濟部智慧財產局員工消費合作社印製 26 1244620 A7 B7 五、發明説明(24 經濟部智慧財產局員工消費合作社印製 圈10之端子10b(10a)施有碾壓加工。像這樣,將凹部14形 成得比半導元件12之厚度更深,藉此可盡量減少從用來連 接兩端子之環路之平面線圈突出之部分。 一方面,第30(b)圖,係將大致與半導體元件12之厚 度相等之深度的凹部14,形成於平面線圈10之導線u的例 者。依此列,由於平面線圈1〇之端子10b(1〇a)之連接面16 與半導體元件12之電極端子12a、12b之形成面為實質地同 一之面,所以可省略對於平面線圈1〇之端子1〇b(1〇a)施予 礙壓加工之工程。 像這樣,依照第29圖及第30(a)、30(b)圖所示之1(:卡 ,由於平面線圈10之端子l〇a、10b之連接面16,與半導體 元件12之電極端子12a、12b之形成面,為實質地同一之平 面,所以可藉楔子接合法或球接合法來施行金屬線接合。 因此,如第2圖所示,一面可盡量地減少從平面線圈丨〇之 面突出之環路部分,一面可使用金、白金或鋁製之金屬線 18 18 ’來電接平面線圈1〇之端子i〇a、與半導體元件 12之電極端子12a、12b。 與第2圖所示之情況同樣,在第3〇(a)圖及第3〇(b)圖方 面’也一面可盡量地減少從平面線圈之面突出之環路部分 ,一面可使用金屬線18、18來電接平面線圈1〇之端子1〇a 、l〇b與半導體元件12之電極端子12a、12b。 若要防止環路狀金屬線18之變形等,則如第31圖所 ,宜藉樹脂15、15(尤其是uv硬化樹脂)來預先固定該壓 在平面線圈10之端子l〇b及半導體元件12之電極端子的 示 定 金 (請先聞讀背面之注意事項再填寫本頁) 裝· -訂 衣紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 27 12446201T printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 26 1244620 A7 B7 V. Description of the invention (24 Terminal 10b (10a) of the printed circle 10 of the Employee Cooperative Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is rolled. The recessed portion 14 is formed deeper than the thickness of the semiconducting element 12, thereby minimizing a portion protruding from a planar coil used to connect the loops of the two terminals. On the one hand, FIG. 30 (b) is roughly related to the semiconductor element The recess 14 having the same thickness and depth as 12 is an example formed on the wire u of the planar coil 10. In this row, the connection surface 16 between the terminal 10b (10a) of the planar coil 10 and the electrode terminal of the semiconductor element 12 The forming surfaces of 12a and 12b are substantially the same, so the process of obstructing the pressing of the terminal 10b (10a) of the planar coil 10 can be omitted. In this way, according to Fig. 29 and Fig. 30 ( a), 30 (b), 1 (: card, because the connection surface 16 of the terminals 10a, 10b of the planar coil 10 and the formation surface of the electrode terminals 12a, 12b of the semiconductor element 12 are substantially the same Plane, so we can use the wedge or ball joint method Therefore, as shown in Fig. 2, the loop portion protruding from the plane coil can be minimized on one side, and a metal wire made of gold, platinum, or aluminum can be used on the other side. The terminal i0a of the coil 10 and the electrode terminals 12a and 12b of the semiconductor element 12 are the same as those shown in FIG. 2 and are also shown in FIG. 30 (a) and FIG. 30 (b). The loop portion protruding from the plane coil surface can be minimized, and the wires 10 and 18 of the plane coil 10 can be used to connect the terminals 10a and 10b of the plane coil 10 and the electrode terminals 12a and 12b of the semiconductor element 12 on one side. To prevent deformation of the loop-shaped metal wire 18, as shown in FIG. 31, it is preferable to use resins 15 and 15 (especially UV curing resin) to fix the terminals 10b of the flat coil 10 and the semiconductor element 12 in advance. Deposit of the electrode terminal (please read the precautions on the back before filling this page). Assembling ·-The size of the ordering paper is applicable to China National Standard (CNS) A4 (210X297 mm) 27 1244620

屬線18之壓定部。 在第29圖〜第31圖所示之平面線圈1〇中,施有碾壓加 工之端子10a、10b之連接面16 ,雖說只要與包含半導體元 件12之電極端子12a、121)的形成面之平面,實質地成為同 一平面即可,其形狀可作成任意之形狀,但第29圖、第3〇(甸 圖及第31圖所示之平面線圈1〇之端子1〇a、1〇b卻以前述第 7圖所示之端子形狀者為理想。 又,如第32圖所示,因接合裝置之動作等之關係,而 迁迴半導體元件12,在設在電極端子i2a、i2b (位置於平 面線圈10之内侧及外侧)間,進行平面線圈1〇3、1〇b與半 導體元件12之電極端子12a、12b之連接也可。第32圖,係 顯不用來連接兩者之金屬線18、18向正交於導線u之方向 伸展之情形。 若要在這種第32圖所示之平面線圈10之端子1〇a、i〇b 施行礙壓加工時,以前述第9圖所示者為理想。 若要解除因電磁感應而在平面線圈1〇產生之電力無法 充份被輸電給半導體元件之可能性,則與第14圖所示之例 同樣,如第34圖所示,宜使用緞帶狀連接構件3〇來連接平 面線圈10之端子10a、l〇b與半導體元件12之電極端子12a 、12b ° 在第29圖〜第34圖方面,並未在平面線圈1〇之端子i〇a 、之各附近形成凹部14 ,但如第35(a)圖、第35(b)圖所 示把凹°卩14形成在端子i〇a)之附近也可。於此等圖 中’凹部14之底面,較之不將凹部14形成在端子l〇b(l〇a) 本紙張尺度適财酬^^TH^FniQX297公釐) (請先閱讀背面之注意事項再填寫本頁} -裝· 經濟部智慧財產局員工消費合作社印製 28 1244620 A7 B7 五、發明説明(2ό ) ~'~~' 附近之場合,更為廣寬。因此,可將半導體元件12,以穩 定之狀態載置於凹部14之底面,進行金屬線接合。 又’形成在平面線圈1 〇之凹部14,係除了彎折導線J i 來形成以外,更利用導線U之厚度大於半導體元件12,而 與第19圖之情形同樣,如第36圖所示,在導線丨丨之中途施 予碾壓加工以形成凹部14也可。此時,可使平面線圈1〇及 半導體元件12,位置於1C卡之厚度方向之中央部,並可將 ic卡形成得扁薄。又,在此時,半導體元件12及金屬線18 被收容在導線11之厚度t之範圍内。 更且’將平面線圈10之端子l〇a、1 〇b作成,一如第37 圖所示,擴大施有碾壓加工之平面線圈10之端子1〇b(1〇a) 之連接面,使一端被連接至半導體元件12之電極端子 12b(12a)的金屬線18之另一端,接合於端子1〇b(1〇a)也可 。在此平面線圈10之端子l〇b(l〇a),形成有口字形之凹部 33,此凹部33係供一形成有電極端子i2b(12a)之半導體元 件元件之端部***者。於此凹部33,***半導體元件12之 端部,藉此使端子10b(10a)沿半導體元件12端部之端緣延 伸’以便包圍所形成有電極端子12b( 12a)之半導體元件12 之端部;其中,電極端子12b(12a)係連接於平面線圈1〇之 端子10b(10a)。因此,可使半導體元件12之定位易於進行 ,且可將金屬線18之長度縮短。此時,宜藉粘合劑來枯接 半導體元件12與平面線圈1〇之導線η之後,接合金屬線is。 第38(a)圖及第38(b)圖,係對於平面線圈1〇之一方的 端子10b施予碾壓加工以形成凹部14作為半導體元件12之 本纸張尺度適用中國國家標準(cns ) A4規格(2獻297公董) ------ ---------jppt.-- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 29 1244620 A7 〜〜____87 __ 五、發明湖(27 ) '~ 裝載部,並將端子l〇b之連接面更加擴大藉以將半導體元 件12裝載於端子i〇b上之例者。在端子1〇b上,藉通常之金 屬線或被覆著之金屬線來連接半導體元件12之電極端子 12b及端子l〇b。平面線圈1〇之另一方之端子i〇a與半導體 元件12之電極端子12a ,係用金屬線18向正交方向誇過導 線11(通過由端子l〇a、10b所隔之中間)來連接著。對於端 子l〇a施予碾壓加工之同時,在導體丨丨上且供金屬線^通 過之部份,施予碾壓加工以形成連接凹部14a,藉此防止 金屬線18從導線11之厚度範圍内突出。在連通凹部之 内面且至少供金屬線18通過之部位,塗佈作為電絕緣性材 使用之、、’邑緣性树知,或者钻接具有電絕緣性之絕緣膠帶, 藉此可使用通常之金屬線18來連接而不產生電短路。 第39圖,係將碾壓加工施予端子1〇a、i〇b以外之導線 11之中途部分,以形成作為半導體元件12之裝載部的凹部 14,於此凹部14裝載半導體元件12之例者,為了裝載半導 體元件12而將凹部14形成比導線11之線寬度更大之寬度, 並將鄰接於裝載部之導線11配置成迂迴凹部14之外側。此 時’對於端子10a、10b施予碾壓加工使之成為與凹部14大 致同一之高度面,同時對於裝載部及由端子1〇a、l〇b所夾 著之導線11且供金屬線18穿過之部位,施予礙壓加工以形 成連通凹部,藉以防止一連接端子10&、l〇b及半導體元件 12之電極端子12a、12b的金屬線18從導線11之厚度範圍内 突出。又,用來連接電極端子12a、12b與端子i〇a、1 〇b之 金屬線1 8 ’最好使用被覆金屬線。只要用電絕緣性材來被 本紙張尺度適用中國國家標準(CNS ) μ規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁j -、^τ- 經濟部智慧財產局員工消費合作社印製 30 1244620 A7 B7It belongs to the fixed part of line 18. In the planar coil 10 shown in FIGS. 29 to 31, the connection surface 16 of the terminals 10a and 10b subjected to the rolling process is formed on the formation surface of the terminal including the electrode terminals 12a and 121 including the semiconductor element 12). The plane can be substantially the same plane, and the shape can be made into any shape. However, the terminals 10a and 10b of the planar coil 10 shown in Figs. 29 and 30 (Figure 31 and Figure 31) The terminal shape shown in FIG. 7 is preferable. As shown in FIG. 32, the semiconductor device 12 is moved back due to the relationship between the operation of the bonding device and the like, and is provided at the electrode terminals i2a and i2b (positioned at It is also possible to connect the planar coils 103 and 10b to the electrode terminals 12a and 12b of the semiconductor element 12 between the plane coils 10 and 10b. Figure 32 shows the metal wires 18 that are not used to connect the two. And 18 extend in a direction orthogonal to the lead wire u. To perform pressure-blocking processing on the terminals 10a and i0b of the planar coil 10 shown in FIG. 32, use the above-mentioned FIG. 9 The electric power generated in the planar coil 10 due to electromagnetic induction cannot be fully charged. The possibility of transmitting power to the semiconductor element is the same as the example shown in FIG. 14. As shown in FIG. 34, it is preferable to use a ribbon-shaped connecting member 30 to connect the terminals 10a, 10b of the planar coil 10 and the semiconductor element. The electrode terminals 12a and 12b of 12 are not formed in the vicinity of each of the terminals i0a and i of the planar coil 10 with respect to Figs. 29 to 34, but as shown in Figs. 35 (a) and 35 (a). b) As shown in the figure, the recess 可 14 may be formed near the terminal i0a). In these figures, the bottom surface of the recessed portion 14 is less than the recessed portion 14 formed at the terminal l0b (l0a). This paper is suitable for financial rewards ^^ TH ^ FniQX297mm) (Please read the precautions on the back first Refill this page}-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 28 1244620 A7 B7 V. Description of the invention (2ό) The place near '~~' is wider and wider. Therefore, the semiconductor device 12 It is placed on the bottom surface of the recessed portion 14 in a stable state to perform metal wire bonding. The recessed portion 14 formed on the planar coil 10 is formed by bending the wire J i, and the thickness of the wire U is greater than that of the semiconductor element. 12, as in the case of FIG. 19, as shown in FIG. 36, rolling processing may be performed in the middle of the wire 丨 丨 to form the recessed portion 14. At this time, the planar coil 10 and the semiconductor element 12, It is located at the central part in the thickness direction of the 1C card, and the IC card can be made thin. At this time, the semiconductor element 12 and the metal wire 18 are accommodated within the thickness t of the wire 11. Furthermore, 'will The terminals 10a and 10b of the planar coil 10 are made as shown in FIG. 37 As shown in the figure, the connection surface of the terminal 10b (10a) of the planar coil 10 subjected to the lamination process is enlarged so that one end is connected to the other end of the metal wire 18 of the electrode terminal 12b (12a) of the semiconductor element 12 and bonded. The terminal 10b (10a) may also be used. Here, the terminal 10b (10a) of the planar coil 10 is formed with a rectangular recess 33, and this recess 33 is provided with an electrode terminal i2b (12a) ) Of the semiconductor element element inserter. Here, the recess 33 is inserted into the end of the semiconductor element 12 so that the terminal 10b (10a) extends along the edge of the end of the semiconductor element 12 so as to surround the formed electrode terminal. 12b (12a) is an end of the semiconductor element 12; among them, the electrode terminal 12b (12a) is connected to the terminal 10b (10a) of the planar coil 10. Therefore, the positioning of the semiconductor element 12 can be easily performed, and the metal The length of the wire 18 is shortened. At this time, it is preferable to bond the metal wire is after the wire η of the semiconductor element 12 and the planar coil 10 is dried with an adhesive. Figs. 38 (a) and 38 (b) are The terminal 10b, which is one of the planar coils 10, is subjected to rolling processing to form a recessed portion 14 as the semiconductor element 1 The paper size of 2 applies to the Chinese National Standard (cns) A4 specification (2 offering 297 public directors) ------ --------- jppt .-- (Please read the precautions on the back before (Fill in this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 29 1244620 A7 ~~ ____ 87 __ 5. Invention Lake (27) '~ Loading section, and the connection surface of the terminal 10b will be further expanded, so that the semiconductor component 12 An example mounted on the terminal i〇b. The terminal 10b is connected to the electrode terminal 12b and the terminal 10b of the semiconductor element 12 by a usual metal wire or a covered metal wire. The other terminal i0a of the planar coil 10 and the electrode terminal 12a of the semiconductor element 12 are connected with the metal wire 18 in an orthogonal direction over the wire 11 (through the middle separated by the terminals 10a and 10b). With. At the same time as the terminal 10a is subjected to a rolling process, a portion on the conductor and through which the metal wire ^ is passed is subjected to a rolling process to form a connection recess 14a, thereby preventing the metal wire 18 from the thickness of the wire 11 Outstanding range. On the inner surface of the communicating recess and at least the portion through which the metal wire 18 passes, apply an insulating tape that is used as an electrically insulating material, or use an insulating tape with electrical insulation to drill. The metal wires 18 are connected without generating an electrical short. FIG. 39 is an example in which a rolling process is applied to a portion of the lead wire 11 other than the terminals 10a and 10b to form a recessed portion 14 as a mounting portion of the semiconductor element 12, and the semiconductor element 12 is mounted on the recessed portion 14. In order to mount the semiconductor element 12, the recessed portion 14 is formed to have a width larger than the line width of the lead 11, and the lead 11 adjacent to the mounting portion is arranged to bypass the recessed portion 14. At this time, the terminals 10a and 10b are subjected to a rolling process so as to have a height surface substantially the same as that of the recessed portion 14; The passing portion is subjected to a pressing process to form a communication recess, thereby preventing a metal wire 18 connecting a terminal 10 & 10b and the electrode terminal 12a, 12b of the semiconductor element 12 from protruding from the thickness of the wire 11. Further, it is preferable to use a covered metal wire for the metal wire 18 'for connecting the electrode terminals 12a and 12b and the terminals i0a and 10b. As long as an electrical insulating material is used, the Chinese standard (CNS) μ specification (210X 297 mm) is applied to this paper size (Please read the precautions on the back before filling out this page j-, ^ τ-Staff of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives 30 1244620 A7 B7

請 先· 閲 面、 之 注Please read first, note

II

頁 訂 31 1244620 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(29 ) 線11相等厚度之半導體元件12時,如第42圖所示,將半導 體元件10配設成,對於電極端子12a、12b之形成面成背面 側之平面位置於導線11側,並藉金屬線丨8、丨8在不對於平 面線圈10之端子l〇a、10b施予碾壓加工下,連接端子i〇a 、l〇b與半導體元件12之電極端子12a、12b以形成1C卡也 可。此時,金屬線1 8、1 8之環路之一部分雖從導線丨丨突出 ,但突出量微少,可忽視。因此,可藉形成在樹脂薄膜2〇a 、20b—面側之粘合劑層22a、22b,充份密封金屬線18、18 ,密封時之變形也不成為問題。 猎苐29圖〜第42圖來說明過來的ic卡,雖使用金屬線 18或锻帶狀之連接金屬構件3〇來連接平面線圈1〇與半導體 元件12,但如第43圖所示,使用一種將半導體元件樹脂模 製成而之模組體40也可。此模組體40係被樹脂模製成,如 第44圖及第45圖所示’露出形成在引入線仏、46前頭部之 連接部47。該引入線46、46係透過焊劑突出體44、44來接 σ於半導體元件12之電極端子12a、12b。 這種模組體40之連接部47、47,係接合於平面線圈1〇 之^子l〇a、1 〇b。此接合,則對於連接部ο、47之連接面 施予鍍金、鍍錫、或焊劑電鍍同時,對於半導體元件12之 電極、子12a、12b及平面線圈1〇之端子1〇&、施以鑛金 ’並將連接著之兩端子加以加熱·壓定,藉此使用共晶合 金來進行接合。一方面,若連接部47、47為鋁製時,不對 於連接部47、47之連接面施予金屬電鍍也可進行兩端子之 連接。又,可使用導電性粘合劑來進行兩端子之連接。 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 -1¾ 32 1244620 五、發明説明(3〇 ) 又,在安裝有模組體40之平面線圈1〇之部分,形成有 一彎折導線11以供模組體40***之凹部。 以上所說明的IC卡,係就對於捲繞多數圈平面線圈10 的導線U之延伸方向,將㈣體元件12之端子(接合塾片) 12a、12b形成在兩側之-邊進行說明之例者。反觀,第私 圖所示之ic卡,係將半導體元件12之接合塾片12&、^, 對於平面線圈10之f線11的延伸方向,形成於其單側。此 例就是,使平面線H)之一方(例如,外側端)之端子心迁 迴半導體元件12之外侧,進而將之延伸至排列成跟平面線 圈10之另一方(例如,内側端)之端子10b同側之位置。然 後,將端子10a、10b之部分作為具有為接合所必需之區域 的墊片(pad),在位於端子10a、1〇b附近之半導體元件12 之電極端子12a、12b間,分別用金屬線18、18來接合。又 ,不用說,與上述相反,使平面線圈1〇之單侧端1〇b迂迴 半導體元件12之内側也可。 第47(a)圖〜第47(c)圖,係顯示一用密封樹脂來凝固 固定半導體元件12之後,藉樹脂薄膜2〇a、2〇b夾住以製成 1C卡時之製造工程。首先,如第47(a)圖所示,在碾壓一 構成平面線圈10之導線11以形成凹部14之部位,裝載半導 體元件12。其次,如第47(b)圖所示,用密封樹脂5〇來模 塑成型半導體元件12及平面線圈10之半導體元件裝載部。 此時之模塑成型係以傳遞模塑為理想。第48圖為一斜視圖 ,係顯示模塑成型後之半導體元件之狀態者。接著從平面 線圈10之上下’介在枯合劑層22a、22b,並用樹脂薄膜20a 表纸張尺度適用中國國家標準(CNS ) M規袼(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) .裝· 訂 經濟部智慧財產局員工消費合作社印製 33 124462〇Page 31 1244620 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (29) When the semiconductor element 12 with the same thickness as the wire 11 is shown in FIG. 42, the semiconductor element 10 is arranged so that The forming surfaces of the terminals 12a and 12b are positioned on the back surface side on the conducting wire 11 side, and the wires i, 8 and 8 are connected to the terminal i without rolling the terminals 10a and 10b of the flat coil 10 by lamination. 〇a, 10b and the electrode terminals 12a, 12b of the semiconductor element 12 may form a 1C card. At this time, although a part of the loop of the metal wires 18 and 18 protrudes from the wire 丨 丨, the amount of protrusion is small and can be ignored. Therefore, the metal wires 18 and 18 can be fully sealed by the adhesive layers 22a and 22b formed on the surface sides of the resin films 20a and 20b, and the deformation during sealing is not a problem. The hunting ic card 29 to 42 shows the ic card. Although the metal coil 18 or the forged strip-shaped connecting metal member 30 is used to connect the planar coil 10 and the semiconductor element 12, as shown in FIG. 43, it is used. A module body 40 in which a semiconductor element resin is molded may be used. This module body 40 is molded by resin, and as shown in Figs. 44 and 45, the connection portion 47 formed on the front head of the lead-in wires 46 and 46 is exposed. The lead wires 46 and 46 are connected to the electrode terminals 12a and 12b of the semiconductor element 12 through the solder protrusions 44 and 44 respectively. The connection portions 47 and 47 of this module body 40 are connected to the sub-coils 10a and 10b of the planar coil 10. In this joining, gold, tin, or solder plating is applied to the connection surfaces of the connection portions ο, 47, and at the same time, the electrodes 10a, 12b, and the terminals 10 of the planar coil 10 of the semiconductor element 12 are applied with Ore gold is used, and the two connected terminals are heated and compacted, whereby eutectic alloy is used for bonding. On the other hand, if the connecting portions 47 and 47 are made of aluminum, the two terminals can be connected without applying metal plating to the connecting surfaces of the connecting portions 47 and 47. The two terminals can be connected using a conductive adhesive. (Please read the precautions on the back before filling in this page) Binding · 1-232 32 1244620 V. Description of the invention (30) In addition, a bent wire is formed at the part of the flat coil 110 where the module body 40 is installed. 11 is a recess for the module body 40 to be inserted. The IC card described above is an example in which the terminals (joining tabs) 12a and 12b of the body element 12 are formed on the sides of both sides of the extension direction of the lead U of the planar coil 10 wound around a plurality of turns. By. In contrast, the IC card shown in the private figure is formed on one side of the extending direction of the f-line 11 of the planar coil 10 by joining the bonding tabs 12 & and ^ of the semiconductor element 12. In this example, the terminal center of one side (for example, the outer end) of the planar line H) is moved back to the outer side of the semiconductor element 12, and then it is extended to the terminal arranged to the other side (for example, the inner side) of the planar coil 10 10b on the same side. Then, a part of the terminals 10a and 10b is used as a pad having a region necessary for bonding, and a metal wire 18 is used between the electrode terminals 12a and 12b of the semiconductor element 12 located near the terminals 10a and 10b, respectively. , 18 to join. Needless to say, contrary to the above, the one-side end 10b of the planar coil 10 may be routed to the inside of the semiconductor element 12. Figures 47 (a) to 47 (c) show the manufacturing process when the semiconductor element 12 is fixed with a sealing resin and fixed with resin films 20a and 20b to form a 1C card. First, as shown in FIG. 47 (a), a semiconductor element 12 is mounted on a portion where a wire 11 constituting the planar coil 10 is rolled to form a recessed portion 14. As shown in FIG. Next, as shown in Fig. 47 (b), the semiconductor element 12 and the semiconductor element mounting portion of the planar coil 10 are molded with the sealing resin 50. The molding at this time is preferably transfer molding. Fig. 48 is an oblique view showing the state of the semiconductor device after molding. Then from above and below the plane coil 10, interpose the desiccant layers 22a and 22b, and use the resin film 20a. The paper size applies the Chinese National Standard (CNS) M Regulation (210X297 mm) (Please read the precautions on the back before filling in this Page). Binding and printing printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 33 124462〇

五、 發明説明(3l ) 、20b夾入以製成1C卡。 又,若用樹脂來密封半導體元件12時,雖如第47(a) 圖〜第47(c )所示一般可藉模塑成型來形成密封樹脂,但 如第49圖所略示,藉鑄封52來形成也可。 像這樣樹脂密封半導體元件12,藉此加強半導體元件 12,在如上述一般的,用樹脂薄膜2〇a、2〇b來層壓半導體 元件12及平面線圈等之製造工程中,可緩和外加於半導體 元件12之應力’從而可防止因裂縫而造成之半導體元件a 之損壞。又,在製造後之1C卡之使用時,也可緩和彎曲1(;: 卡時等所作用的應力,因而可防止半導體元件之損壞。 [產業上之可利用性] 如依本發明之1C卡及1C卡用框架則連續金屬線並不需 要穿過平面線圈,即可輕易連接藉加壓加工來形成的平面 線圈之端子與半導體元件之電極端子。因此,可謀IC卡及 1C卡用框架之低成本化及大量生產化。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張又度適用中國國家標準(CNS ) A4規格(210X297公慶) 34 1244620 A7 B7 五、發明説明(32 ) 10…平面線圈 10a,10b...端子 12a,12b...電極端子 11…導體 12.. .半導體元件 14,33…凹部 15…樹脂 16.. .連接面 18.. .金屬線 20a,20b··.樹脂薄膜 22a,22b...枯合劑層 23a,23b...金屬線用墊片 24.. .楔子 元件標號對照 25.. .支持用金屬線 26.. .夾子 27.. .壁部 30.. .連接金屬構件 30c...圓頂狀 34.. .彎曲部 36…粘合劑層 38.. .突出部 40.. .u字形部 F…框架 60 _··軌 62.. .連結部 (請先閱讀背面之注意事項再填寫本頁) •裝· 、11 d 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 355. Description of the invention (3l), 20b is sandwiched to make a 1C card. When the semiconductor element 12 is sealed with a resin, the sealing resin can be formed by molding, as shown in Figs. 47 (a) to 47 (c). However, as shown in Fig. 49, it can be formed by casting. The seal 52 may be formed. In this way, the semiconductor element 12 is resin-sealed to strengthen the semiconductor element 12. In the manufacturing process of laminating the semiconductor element 12 and the planar coil with resin films 20 a and 20 b as described above, the external application can be relaxed. The stress of the semiconductor element 12 can prevent damage to the semiconductor element a due to cracks. In addition, when the 1C card is manufactured after use, it can also relieve the stress caused by bending 1 (;: card time, etc.), so that damage to the semiconductor element can be prevented. [Industrial Applicability] For example, according to 1C of the present invention The frame for cards and 1C cards is a continuous metal wire that does not need to pass through the planar coils, and can easily connect the terminals of the planar coils formed by pressure processing and the electrode terminals of semiconductor elements. Therefore, it can be used for IC cards and 1C cards. Frame cost reduction and mass production. (Please read the notes on the back before filling out this page) The paper printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is in compliance with China National Standard (CNS) A4 (210X297) ) 34 1244620 A7 B7 V. Description of the invention (32) 10 ... plane coil 10a, 10b ... terminals 12a, 12b ... electrode terminal 11 ... conductor 12 .... semiconductor element 14,33 ... recess 15 ... resin 16. .. Connection surface 18. .. Metal wires 20a, 20b ... Resin films 22a, 22b ... Desiccant layers 23a, 23b ... Gaskets for metal wires 24 .. Wedge element reference number 25 ... Support metal wire 26 .. clip 27 .. wall 30 .. connect metal structure 30c ... dome-like 34 .. curved portion 36 ... adhesive layer 38..protruded portion 40..u-shaped portion F ... frame 60 _... rail 62 .. connecting portion (please first Read the notes on the back and fill in this page) • Packing, 11 d Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives This paper is printed in accordance with China National Standard (CNS) A4 (210X297 mm) 35

Claims (1)

六、申請專利範圍 第 88106958號Scope of Patent Application No. 88106958 專利申請案申請專利範圍替換本94.9.7 1· 一種1C卡,係備有一由導線在實質地同一面上捲繞多數 圈而成之平面線圈,及一電接於該平面線圈之端部且具 有電極端子的半導體元件者;其特徵在於·· 該平面線圈係藉由加壓加工或是蝕刻加工來形成者 ’並具備有形成在線圈内側之内側端子及形成在線圈外 側之外側端子; 前述半導體元件,係配設成其電極端子之形成面對 向於平面線圈之導線同時,跟前述平面線圈之施予碾壓 加工的内側端子及外側端子連接之半導體元件的電極端 子之各個,分別位置成與該平面線圈之内側端子及外側 端子鄰接;且, 别述半導體元件之電極端子,係藉由環路狀之接合 線而與對於線圈之内外方向位置成同一侧之平面線圈之 端子電接,且,前述半導體元件係藉由對形成平面線圈 之導線施予碾壓加工而配設在一形成在平面線圈之凹部 且則述半導體元件與刖述接合線係收納在該平面線圈 之導線厚度的範圍内者。 2·如申請專利範圍第1項所述之1€卡,其中 ^前述平面線圈及半導體元件,係藉由形成IC卡之表 背面的各樹脂賴,且使用形成在該等内面側之米占合劑 層來加以夾入密封著。 3·如申請專利範圍第1項所述之1C卡,其中 則述平面線圈之端子,係施有碾壓加工,以便與形 τ、申請專利範圍 成有半導體元件之電極端子的形成面實f地成同 面。 4·如申請專利範圍第3項所述之1(:卡,其中 、曾前述施有碾壓加工之平面線圈之端子,係沿前述半 導體7G件端部延伸,以便包圍半導體元件之端部,此半 導體7C件設有與前述平面線圈之端子連接之電極端子。 5·如申凊專利範圍第1項所述之1(:;卡,其中 前述藉助接合線之連接,係藉楔形接合法來進行。 6.如申睛專利範圍第1項所述之Ic卡,其中 前述藉助接合線之連接,係藉球接合法來進行。 7·如申請專利範圍第!項所述之…卡,其中 與前述平面線圈之内側端子及外側端子埭接之半 導體元件的電極端子之各個,係分別位置在平面線圈之 内側及外側。 8·種1C卡’係備有一由導線在實質地同一面上捲繞多數 圈而成之平面線圈,及一電接於該平面線圈之端部且具 有電極端子之半導體元件者;其特徵在於: 該平面線圈係藉由加壓加工或是蝕刻加工來形成 者’並具備有形成在線圈内側之内側端子及形成在線圈 外側之外側端子; 剞述半體元件,係配設成其背面側之平面對於其 電極端子之形成面,跟平面線圈之導線對向,同時跟前 述平面線圈之施予碾壓加工的内側端子及外側端子連 接之半導體元件的電極端子之各個,分別位置成與該平 1244620The scope of the patent application for the patent application replaces this 94.9.7 1. A 1C card is provided with a planar coil formed by winding a plurality of turns of a wire on substantially the same surface, and an electrical end connected to the planar coil and A semiconductor element having an electrode terminal; characterized in that the planar coil is formed by pressing or etching, and includes an inner terminal formed inside the coil and a terminal formed outside the coil; The semiconductor element is arranged so that the electrode terminals are formed to face the wires facing the planar coil, and each of the electrode terminals of the semiconductor element connected to the inner terminal and the outer terminal subjected to the lamination process of the aforementioned planar coil is positioned separately. It is adjacent to the inner terminal and the outer terminal of the planar coil; and the electrode terminals of the other semiconductor elements are electrically connected to the terminals of the planar coil on the same side with respect to the inner and outer directions of the coil by a loop-shaped bonding wire. Moreover, the aforementioned semiconductor element is disposed on a flat surface formed by laminating a wire forming a planar coil. The recessed portion of the surface coil, and the semiconductor element and the bonding wire are housed within the range of the thickness of the wire of the planar coil. 2. The 1 € card as described in item 1 of the scope of patent application, in which ^ the aforementioned planar coils and semiconductor components are formed by using resins on the front and back surfaces of the IC card, and using the rice formed on the inner side The mixture layer is sandwiched and sealed. 3. The 1C card as described in item 1 of the scope of patent application, wherein the terminals of the planar coil are subjected to rolling processing so that the formation surface of the electrode terminal with semiconductor elements in the shape of τ and the scope of patent application is f The ground is on the same side. 4. As described in Item 1 of the scope of the patent application (1: card, in which the terminal of the planar coil that has been previously rolled is extended along the end of the aforementioned semiconductor 7G component so as to surround the end of the semiconductor element, This semiconductor 7C component is provided with electrode terminals connected to the terminals of the aforementioned planar coil. 5. As described in item 1 of the patent application 1 (:; card, wherein the aforementioned connection by means of a bonding wire is made by a wedge bonding method 6. The Ic card as described in item 1 of the Shenjing patent scope, wherein the aforementioned connection by means of a bonding wire is performed by the ball joining method. 7. The card as described in the scope of the patent application! Each of the electrode terminals of the semiconductor element connected to the inner terminal and the outer terminal of the planar coil is located on the inner side and the outer side of the planar coil, respectively. 8. Type 1C card is provided with a wire wound on substantially the same surface. A planar coil formed by winding a plurality of turns, and a semiconductor element electrically connected to an end portion of the planar coil and having an electrode terminal; characterized in that: the planar coil is processed by pressing or etching The “former” also has inner terminals formed on the inner side of the coil and terminals formed on the outer side of the outer side of the coil; the half-body element is arranged such that a plane on the back side thereof faces a formation surface of the electrode terminal, and a lead wire of the plane coil Each of the electrode terminals of the semiconductor element connected to the inner terminal and the outer terminal subjected to the lamination process of the planar coil at the same time is respectively positioned to be flat with the flat 1244620. 38'- A B c D 1244620 六、申叫專利範圍 +及形成在線圈外側之外侧端子; =述:側端子及外側端子中之—方之端子,係作為 :、載前述半導體元件於端子面内之裝載部而形成 ’ ’該裝載部係對平面線圈之導線衫碾壓加工而形成在 ⑼㈣部’而另―方之端子亦施予碾壓加工; 裝載在該裝載部之半導體元件之電極端子,與前述 内側端子及外側端子,分別藉金屬線接合來電接,在通 過-方端子與另—方端子中間之導線中、藉由對供一用 纟連接ϋ端子及半導體元件之電極端子之接合線 . 穿過的導線部份施予碾壓加工而設置凹部,且前述半導 體元件與前述接合線係收納在該平面線圈之導線厚度 的範圍内者。 ^ 14· 一種1C卡,係藉加壓加工或蝕刻加工金屬板來形成一 由導線在實質地同一之平面上捲繞多數圈而成之平面 線圈,且將前述平面線圈之端子與半導體元件之電極端 子加以電接者;其特徵在於·· I 該平面線圈之端子,備有形成在線圈内側之施予碾 壓加工的内側端子及形成在線圈外側之施予碾壓加工 I 的外側端子; | 通過由別述内側端子及外側端子所夾著之中間的 至少一條導線之中途部分,係形成在一裝載半導體元件 I 於導線面内之裝載部,該裝載部係形成在比對導線施予 I 碾慶加工之導咸更寬的凹部,且在供通過由裝載部及一 I 方端子所夾著中間之導線之接合線穿過的穿過部分,以 本紙張尺度適用中國國家標準(CNS) Α4規格(21 0Χ297公爱) -- 39 1244620 六、申請專利範圍 及在仏通過由裳載部及另一方端子所夫著中間之導線 之接合線穿過的部分,分別設置連通凹部; 破載在σ亥裝載部之半導體元件與前述内側端子及 外側端子’分別藉通過前述連通凹部之金屬線接合來電 接,且前述半導體元件與前述接合線係收納在該平面線 圈之導線厚度的範圍内。 15·—-種IC卡用框架,係可用於IC卡之製造者,該^卡係 藉加壓加工或蝕刻加工金屬板來形成一由導線在實質 地同一之平面上捲繞多數圈而成之平面線圈,且將前述 平面線圈之端子與半導體元件之電極端子加以電接者 ;其特徵在於: 前述平面線圈,備有:施予碾壓加工之内側端子, 其係形成在線圈之内側,此線圈即分別電接有對於線圈 之内側及外側位置成同一側的半導體元件之電極端子 ;及施予碾壓加工之外側端子,其係形成在線圈之外侧 ,對形成前述平面線圈之導線的一部分施予碾壓加工, 前述平面線圈係形成有裝載半導體元件之凹部,在穿過 連接裝載於該凹部之半導體元件之電極端子與前述平 面線圈之内側端子以及外侧端子之接合線之平面線圈 的導線部分設置連通凹部,且前述半導體元件與前述接 合線係收納在該平面線圈之導線厚度的範圍内。 16.如申請專利範圍第15項所述之ic卡用框架,其中 前述形成在平面線圈之凹部,係用來形成前述平面 線圈之導線的中途,施予碾壓加工而成,前述内側端子 1244620 六、申請專利範圍 及外側端子巾之H子,係作為用來裝載前述半導 體元件於端子面内之裝載部而形成。 17·如申請專利範圍第15項所述之财用框架,其中 W述裝載部,係形成在—向導線施予碾壓加工成寬 I 度比導線更寬之凹部; 在通過一方端子與另一方端子中間之導線中,供一 肖來連接另-方端子及半導體元件之電極端子的接合 I 線穿過之部位,設有連通凹部。 18. 如申請專利範圍第15項所述之…卡用框架其中 /前述連通凹部的,至少供接合線通過之内面部分, 係由電料材所被覆著’通職前述_端子及外侧端 子所«巾狀至少-糾線之中途部分,係作為 纟裝載半導體元件於導線㈣之裝載部而形成。'"、 19. 如申請專利範圍第15項所述之冗卡用框架其中 前述裝載部,係形成在—向導線施予碾塵加工成寬 度比導線更寬之凹部; 纟通過由裝載部及-方端子所夾著之中間的導線 ,及供一通過由裝載部及另一方端子所夾著之中間的導 I 線之金屬線穿過之部位,設有連通凹部。 20·如申請專利範圍第15項所述之…卡用框架,其中 在平行之二條執之間,向執之長向連設有多數個同 I 一形狀之平面線圈。 21.如申請專利範圍第2〇項所述之扣卡用框架,其中 在形成平面線圈之導線中,最外周之導線被形成得 張尺關緒準(CNS) A4規格(2ΐϋ97_--- 41 8 8 8 8 A B c D 1244620 申請專利範圍 比其他導線更粗大。 22.如申請專利範圍第20項所述之1C卡用框架,其中 與平面線圈鄰接的最外周之導線,係由連結部所連 結著。 裝: 訂 線 本紙張尺度適用中國國家標準(CNS) A4規格(210X29?公釐) 4238'- AB c D 1244620 VI. The scope of application for patents + and the terminals formed on the outside of the coil; = Description: One of the side and outside terminals is a terminal that is used to: carry the aforementioned semiconductor element in the terminal surface The loading part is formed by 'the loading part is formed by laminating the wire shirt of the planar coil and formed on the crotch part', and the other terminal is also subjected to the laminating process; the electrode terminal of the semiconductor element loaded on the loading part , And the above-mentioned inner terminal and outer terminal are respectively connected by a metal wire, and in the wire between the -square terminal and the other -square terminal, the connection is made by the connection of the ϋ terminal and the electrode terminal of the semiconductor element. The recessed portion is provided by subjecting the lead wire portion that is passed through, and the semiconductor element and the bonding wire are accommodated within the thickness range of the lead wire of the planar coil. ^ 14 · A 1C card is formed by pressing or etching a metal plate to form a planar coil formed by winding a plurality of turns of a wire on a substantially same plane, and connecting the terminals of the aforementioned planar coil and the semiconductor element. The electrode terminal is electrically connected; it is characterized in that the terminal of the planar coil is provided with an inner terminal that is subjected to lamination processing on the inner side of the coil and an outer terminal that is subjected to lamination processing I that is formed on the outside of the coil; An intermediate portion of at least one conducting wire sandwiched between the inner terminal and the outer terminal is formed as a loading portion for loading the semiconductor element I in the plane of the wire, and the loading portion is formed on the comparison wire I Ningqing processed the guide with a wider recess, and in the through part for passing through the bonding wire sandwiched between the loading part and an I-side terminal, the Chinese national standard (CNS ) Α4 specification (21 0 × 297 public love)-39 1244620 6. Scope of patent application and passing through the bonding wire of the conductor in the middle of the work by the carrier and the other terminal The semiconductor recesses loaded in the sigma loading part are connected to the inner terminal and the outer terminal through the metal wire of the communication recess, respectively, and the semiconductor element and the bonding wire are stored in the Within the range of the wire thickness of the flat coil. 15 · —A type of IC card frame, which can be used by IC card manufacturers. The card is formed by pressing or etching a metal plate to form a plurality of wires wound on a substantially same plane. A planar coil, and the terminal of the planar coil and the electrode terminal of the semiconductor element are electrically connected; the planar coil is provided with an inner terminal subjected to lamination processing, which is formed on the inner side of the coil, This coil is respectively electrically connected with the electrode terminals of the semiconductor elements on the same side to the inner and outer positions of the coil; and the outer terminals subjected to lamination processing are formed on the outer side of the coil, and the wires forming the aforementioned flat coil are A part of the flat coil is subjected to lamination processing, and the planar coil is formed with a recessed portion on which a semiconductor element is mounted. The conductive wire portion is provided with a communication recess, and the semiconductor element and the bonding wire are accommodated in a conductive wire having a thickness of the planar coil. Within range. 16. The frame for an IC card according to item 15 of the scope of patent application, wherein the recess formed in the planar coil is formed by laminating the conductor of the planar coil, and the inner terminal 1244620 is formed. 6. The scope of the patent application and the outer terminal towel are formed as loading parts for loading the aforementioned semiconductor components in the terminal surface. 17. The financial frame according to item 15 of the scope of the patent application, wherein the loading part is formed in a guide line that is rolled and processed into a recess with a width I degree wider than that of the wire; after passing through one terminal and the other One of the wires in the middle of the one terminal is provided with a connecting recessed portion where the bonding I-line for the connection between the other terminal and the electrode terminal of the semiconductor element passes. 18. As described in item 15 of the scope of the patent application ... the frame for the card, among which / the aforementioned communicating recesses, at least the inner surface portion through which the bonding wire passes, is covered by electrical materials, and the aforementioned terminals and external terminals are covered by «Towel-shaped at least-halfway through the wire, it is formed as a mounting part where the semiconductor element is mounted on the lead wire. '& 19 .; 19. The above-mentioned loading portion of the frame for a redundant card described in item 15 of the scope of patent application, wherein the aforementioned loading portion is formed in a guide line that is subjected to dust milling to a recessed portion wider than the wire; A connecting recessed portion is provided between the middle lead wire sandwiched by the -square terminal and a portion through which a metal wire passing through the intermediate lead I wire sandwiched by the loading section and the other terminal is passed. 20. The card frame as described in item 15 of the scope of patent application, wherein a plurality of planar coils of the same shape are provided in the longitudinal direction of the parallel direction between two parallel rules. 21. The buckle frame according to item 20 of the scope of patent application, wherein among the wires forming the planar coil, the outermost wire is formed in a Zhangguanguanxuquan (CNS) A4 specification (2ΐϋ97 _--- 41 8 8 8 8 AB c D 1244620 The scope of patent application is larger than other wires. 22. The 1C card frame according to item 20 of the scope of patent application, in which the outermost wire adjacent to the flat coil is connected by the connecting portion. Binding: The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X29? Mm) 42
TW88106958A 1998-09-07 1999-04-29 IC card and frame for IC card TWI244620B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25292098A JP3542281B2 (en) 1998-03-12 1998-09-07 IC card and IC card frame

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