1240333 15321twf.doc/m 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種埶 整方法，且_是有關於置與麟理製程之調 理裝置與熱處理製程之調敕用於均勻加熱晶圓之熱處 【先前技術】 法。 隨著科技的進步與生活 其周邊產業的持續成長，使辑=持績提升，加上電腦及 1C)的應用領域越來越廣。二體電路(Integrated circuit， 所使用之基板储大部分#^紐電路元件而言，其 影测、去光阻;7 ^製：(例如為薄膜沈積、微 ^ 任者，對於積體電路元件進行封 裝、測料步驟’以完成此積體電路元叙㈣。 在進料些半導體製程(尤其是歸贱者是熱氧化 製私)時’值度」將會是其重要的控制參數之—。為了能 夠有效地、快速崎於W進行祕理製程，但又不影塑 到積體電路元件之摻質分佈情形，後來才發展出所謂之「快 速熱處理(Rapid Thermal Processing，簡稱rtp)技術」。然 而，要如何達到晶圓各部位溫度之均勻性要求，乃是快速 熱處理技術中之最重要的技術課題之一。 圖1A繪示為習知之一種熱處理裝置的剖面示意圖。 圖1B緣示為圖1A之加熱燈組的俯視示意圖。請同時參照 圖1A及1B，習知的熱處理裝置100主要包含一腔體11〇、 一載台120、一加熱燈組130，其中載台120、加熱燈組13〇 1240333 15j2itwf.doc/m 係配置於腔體110内，而加熱燈組i3〇係配置於載台 之上方，其中加熱燈組130係由多個單一之加熱燈泡132 與燈罩134所組成。一晶圓1〇係配置於载台12〇上，而加 熱燈組130係用以加熱此晶圓1 〇。 名人進行加熱此晶圓1〇之前，首先，則先需調整單一 之加熱燈泡132及其燈罩134對於此晶圓1〇之熱通量分佈 情況，以達到習知熱處理技術的需求。通常，藉由控制加 熱燈泡132與晶圓1〇的間距、燈罩134之形狀以及施加於 燈泡132之加熱功率，就可以調整單一之加熱燈泡132對 於晶圓10之熱通量分佈情形。 接著，依照此單一之加熱燈泡132對於晶圓1〇之熱 通畺分佈結果，來預估由多個單一之加熱燈泡132與燈罩 134所組成之加熱燈組13〇對於晶圓1〇之熱通量分佈情 形。由於晶圓1〇為圓盤狀，且這些加熱燈泡132為對應晶 圓10之圓盤型，因此這些加熱燈泡132通常係以輻射狀之 排列而組成此加熱燈組130(如圖1B所示）。值得注意的 是，由於每一加熱燈泡132之中心處對於晶圓10為垂直照 射，故其所對應之晶圓1〇的區域，將會接收到最高的熱通 里值，相對地，由於每一加熱燈泡132之周緣處對於晶圓 10為非垂直照射，故其所對應之晶圓1〇的區域，將會接 收到較低的熱通量值。然而，晶圓10在如此之熱通量分佈 之下，將無法滿足其均勻性之要求。 為了讓此S3圓1〇之熱通量分佈更為均勻，後來便發 展出讓載台120上之晶圓1〇能夠經由適當速率旋轉之設 1240333 15321twf.doc/m 計，進而使得晶圓10在其相同半徑的圓周向，具有較為均 勻的熱通量分佈。圖2繪示為習知之一種熱處理裝置内之 一晶圓經旋轉後，其熱通量分佈的曲線圖。請參照圖2， 圖2之晶圓1〇的熱通量分佈曲線圖，其橫軸係代表晶圓 10之徑向位置，而縱軸係代表晶圓1〇所接收之熱通量（單 位為W/cm2)，其中橫軸之數值為晶圓之實際徑向位 置（單位為cm)，而橫軸之數值“〇，，代表晶圓10之中心 位置。 請同時參照圖1B及2，由於在相鄰兩加熱燈泡I% 之間所對應之晶圓10之表面為非垂直照射區，故其熱通量 則相對較低。因此，即使在旋轉晶圓10之後，此非垂直照 射區之單位面積所累積的熱量仍然低於加熱燈泡132的垂 直照射區。因此，雖然晶圓1〇在經由適當速率旋轉後，於 其相同半徑的圓周向（如圖1B中的p方向），能夠具有 較為均勻的熱通量分佈；但是，就晶圓1〇之通過其圓心的 徑向而言（如圖1B中的R方向），其熱通量分佈仍然具 有很大的波動情形，如圖2所示，其波動幅度約有正負5% 左右。在此，所謂之波動幅度乃是指熱通量分佈之(波形的 峰值一波形之平均值)/波形之平均值。 如此，當晶圓10之熱通量分佈的波動幅度過大時， 除將引發晶圓10本身之熱應力的產生，進而造成其晶格差 排(dislocation)、產生跳線(亦就是金屬線之間相互連接)之 外，亦將導致半導體製程中，其化學物f (此化學物質乃 是依製程需要而定）之化學反應速率不―，故將嚴重地影 1240333 15321twf.doc/m 響晶圓10之製造良率，進而增加其製造成本。現今，隨著 晶圓10之尺寸愈趨大型化且積體電路之積集度增加，此晶 圓10之溫度分佈差異過大所衍生之問題將更為嚴重。 【發明内容】 有鑑於此，本發明的目的就是在提供一種熱處理製程 之凋整方法，可用於均勻地加熱晶圓，以增加晶圓之製造 良率，進而減少其製造成本。 本發明的再一目的是提供一種熱處理裝置，可用於均 勻地加熱晶圓，以增加晶圓之製造良率，進而減少其製造 成本。 本發明提出一種熱處理製程之調整方法，至少包含下 列數個步驟。首先’將多個加熱燈所組成之一加熱燈組配 f於一待加熱物上，其中這些加熱燈係以軸對稱之多個圈 %的陣列排列，且這些騎係以—圈距比例排列，而加熱 燈組具有—陣列中心，並具有通過此陣列中心之一_向 線，其中此徑向線係由部分之這些加熱燈之中心連^而 成。接著，調整加熱燈組與待加熱物之配置位置，使得加 =組之陣列中心的軸線與待加熱物之—中心的轴線之間 :有J平之一偏移向量’其中偏移向量與最鄰近此偏移向 =之徑向線央有-偏移夾角’且此偏移向量具有一偏移距 夕、=後碰k些加紐之加熱功率，使得這些加熱燈 =些_分職照-功率_來加齡 讓待加熱物以其中心以及加熱燈組以其陣列中心分別、^著 千订待加熱物之中心的軸線作相對旋轉，藉由調整偏移向 1240333 15321twf.doc/ni i’使得原先在兩相鄰之加熱燈間之非直接照射區下的待 加熱物之部分區域，在經旋轉後也會行經加熱燈之直接照 射區，並調整圈距比例以及這些圈環之功率比例，使得待 加熱物可接收來自加熱燈組之均勻的熱通量。 依照本發明的較佳實施例所述之熱處理製程的調整 方法，在將加熱燈組配置於待加熱物上的步驟之前，更包 括量測並調整單一之加熱燈對於待加熱物之熱通量分佈之 步驟，以模擬出由這些加熱燈所組成之加熱燈組對於待加 熱物之熱通量分佈。 依照本發明的較佳實施例所述之熱處理製程的調整 方法，其中此待加熱物的形狀例如為一圓盤狀，其例如為 一晶圓，且加熱燈的形狀例如為圓形。此外，這些圈環之 個數為6，其圈距比例為4/3 : 15 u ·· 2 ;當偏移距離 為e時，此時加熱燈組之這些圈環包含一第一圈環、一第 二圈環、一第三圈環、一第四圈環、一第五圈環以及一第 六圈裱，其中第一圈環與第二圈環之距離為L1=4e/3，而 第二圈環與第三圈環之距離為L2=15e，且第三圈環與第 四圈環之距離為L3=2e，而第四圈環與第五圈環之距離為 L4-2e’且第五圈環與第六圈環之距離為L5=2e，當加熱物 之直徑為D時，此時偏移距離e係由一公式D/2=^Li + x而 得知，其中X值為3mm。 i=1 依照本發明的較佳實施例所述之熱處理製程的調整 ，法，其中水平夾角為15。，且這些加熱燈組之第一圈環、 第二圈環、第三圈環、第四圈環、第五圈環以及第六圈環 I24〇333twf_d〇c/m 之功率比例為 31 : 36 ·· 57 : 71 : 65 : 99。 另提出—種熱處理裝E ’其適於加熱一待加熱 物，此熱處理裝置包含一腔室、—可旋轉載么 + 載台係配置於腔室内；“ 配置於可方疋轉載台上，且加熱燈組係配置於腔室内以及可 旋轉載台上’其中加熱燈組具有多個加熱燈，而這些加敎 燈係以軸對稱之多個圈環的陣列排列，且這些圈環；以： 圈距比例排列。加熱燈組具有—陣列中心，並且有 陣列中心之—徑向線，其中此徑向線係由部分之這些加埶 燈之中心連接而成。加熱燈組之陣列中心的軸線與待加敎 ，：中心的軸線之間具有水平之一偏移向量，而偏移向、 里，取鄰近此偏移向量之徑向線夾有一偏移夾角，且偏移 向里具有-偏移距離。這些加熱燈之這些圈環係分別依照 -功率_來加熱待加熱物。當可旋轉載台輯時，此時 待加熱物以其中心以及加熱燈組以其陣列中心係分別沿著 :行待=熱物之中心的軸線作相對旋轉，藉由調整偏移向 里，使得原先在兩相鄰之加熱燈間之非直接照射區下的待 加熱物之部分區域，在經旋轉後也會行經加熱燈之直接照 射區，並調整圈距比例以及這些圈環之功率比例，使得待 加熱物可接收來自加熱燈組之均勻的熱通量。 本發明更提出一種熱處理裝置，其適於加熱一待加埶 物，此熱處理裝置包含一腔室、一載台與至少一可旋轉 熱燈組，其中載台係配置於腔室内，而待加熱物係配置於 載台上，且可旋轉加熱燈組係配置於腔室内以及載台上， 1240333 15321twf.doc/m 其中可旋轉加熱燈組具有多個加熱燈，而這些加熱燈係以 轴對稱之多個圈環的陣列排列，且這些圈環係以—圈距比 例排列。可旋轉加熱燈組具有一陣列中心，並具有通過此 陣列中心之一徑向線，其中此徑向線係由部分之這些加熱 燈之中心連接而成。可旋轉加熱燈組之陣列中心的輛線^ 待加熱物之-中心的軸線之間具有水平之一偏移向量，^而 偏移向量與最鄰近此偏移向量之徑向線夾有一偏移夾角， 且偏移向量具有-偏移距離。這些加熱燈之這些圈環係 =照-功率比例來加熱待加熱物。#可㈣加熱燈組旋 轉時，此時待加熱物以其中心以及加熱燈組以其陣列中心 ::巧平f此可旋轉加熱燈組之陣列中心的軸線作相 門疋’猎由调整偏移向量’使得原先在兩相鄰之加熱燈 12巧直接照射區下的待加熱物之部分區域，在經旋轉後 園1订=熱燈之直接照射區，並調整圈距比例以及這些 比例，使得待加熱物可接收來自加熱燈组之均 /主本發明的較佳實施例所述之熱處理裝置，其中此 =勿，如為—圓盤狀，其例如為-晶圓，： 圈^形狀例如為圓形。此外，這些圈環之個 圈距比例為4/3 : 1 5 · 9 · 〇 ·。上 八 嫩組之這此圈環例二2; ί偏移距離為e時，此時 -第-園产圈 包含一苐一圈環、一第二圈環、 L 一第四圈環、-第五圈環以及-第六圈環， 與第三圈^哀與第二圈環之距離為L1=4e/3，而第二圈環 ^ 一衣之距離為L2r=1.5e，且第三圈環與第四圈環之 1240333 15321twf.doc/m 距離為L3=2e，而第四_與第 2五圈環與第六圈環之距離…二= 為D時，此時偏移距離6係 · 其中X值為3mm。 △式昀= iSU-e-X而得知， 平央mr的較佳實施例所述之熱處理|置，其中水 =角為15 ’且廷些加熱燈組之第_圈環、第 第三圈環、第四圈環、第五圍 又 固I丨五_以及弟六圈環之功率比例 為 31 · 36 · 57 : 71 : 65 ·· 99。1240333 15321twf.doc / m IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a tempering method, and _ relates to a conditioning device and a heat treatment process for uniformity and uniformity. [Previous Technology] method for heating wafers. With the advancement of science and technology and the continuous growth of its peripheral industries, the application area of the company is increasing, and the application fields of computers and 1C) are becoming wider and wider. Integrated circuit (Integrated circuit, the substrate used to store most of the circuit components), its shadowing, photoresist removal; 7 ^ system: (for example, thin film deposition, micro ^, for integrated circuit components Perform the steps of packaging and measuring materials to complete this integrated circuit element description. When feeding in some semiconductor processes (especially those who are inferior to thermal oxidation and private manufacturing), the "value" will be one of its important control parameters— In order to be able to carry out the esoteric process efficiently and quickly, but without affecting the dopant distribution of integrated circuit components, the so-called "rapid thermal processing (rtp) technology" was later developed However, how to achieve the temperature uniformity requirement of each part of the wafer is one of the most important technical issues in rapid heat treatment technology. Figure 1A is a schematic cross-sectional view of a conventional heat treatment device. Figure 1B is shown as 1A is a schematic top view of the heating lamp group. Please refer to FIGS. 1A and 1B at the same time. The conventional heat treatment device 100 mainly includes a cavity 110, a stage 120, and a heating lamp group 130, among which the stage 120 and the heating lamp 13〇1240333 15j2itwf.doc / m is arranged in the cavity 110, and the heating lamp group i30 is arranged above the carrier. The heating lamp group 130 is composed of a plurality of single heating bulbs 132 and a lamp cover 134. A wafer 10 is arranged on a stage 120, and a heating lamp group 130 is used to heat the wafer 10. Before a celebrity can heat the wafer 10, first, a single heating bulb 132 needs to be adjusted. And its lampshade 134 for the heat flux distribution of this wafer 10 to meet the requirements of conventional heat treatment technology. Generally, by controlling the distance between the heating bulb 132 and the wafer 10, the shape of the lampshade 134 and the application to the bulb The heating power of 132 can adjust the heat flux distribution of a single heating bulb 132 to the wafer 10. Then, based on the heat flux distribution of the single heating bulb 132 to the wafer 10, it is estimated that The heat flux distribution of the heating lamp group 13 composed of a single heating bulb 132 and the lampshade 134 for the wafer 10. Since the wafer 10 is disc-shaped, and these heating bulbs 132 are corresponding to the wafer 10 Disc type, so these add The heat bulbs 132 are usually arranged in a radial arrangement to form the heating lamp group 130 (as shown in FIG. 1B). It is worth noting that, since the center of each heating bulb 132 is vertically irradiated to the wafer 10, The area corresponding to the wafer 10 will receive the highest heat flux value. In contrast, since the periphery of each heating bulb 132 is not perpendicular to the wafer 10, the corresponding wafer 1 Area, will receive a lower heat flux value. However, the wafer 10 under such a heat flux distribution will not be able to meet its uniformity requirements. In order to make this S3 round 10 heat flux The distribution is more uniform. Later, a device 1240333 15321twf.doc / m that allows the wafer 10 on the stage 120 to rotate at an appropriate rate has been developed, so that the wafer 10 has a more uniform circumferential direction in the same radius. Heat flux distribution. FIG. 2 is a graph showing a heat flux distribution of a wafer in a conventional heat treatment apparatus after being rotated. Please refer to FIG. 2, the heat flux distribution curve of wafer 10 in FIG. 2, whose horizontal axis represents the radial position of wafer 10 and the vertical axis represents the heat flux (units) received by wafer 10 W / cm2), where the value on the horizontal axis is the actual radial position of the wafer (the unit is cm), and the value on the horizontal axis "0" represents the center position of the wafer 10. Please refer to Figures 1B and 2 at the same time. Since the surface of the wafer 10 between two adjacent heating bulbs I% is a non-vertical irradiation area, the heat flux is relatively low. Therefore, even after the wafer 10 is rotated, this non-vertical irradiation area The accumulated heat per unit area is still lower than the vertical irradiation area of the heating bulb 132. Therefore, although the wafer 10 is rotated at an appropriate rate, it can be rotated in the circumferential direction of the same radius (such as the p direction in FIG. 1B). Has a relatively uniform heat flux distribution; however, as far as the radial direction of the wafer 10 passing through its center (as shown in the R direction in FIG. 1B), its heat flux distribution still has a large fluctuation situation, as shown in FIG. As shown in Figure 2, the fluctuation range is about plus or minus 5%. Here, the so-called fluctuation range The degree refers to the heat flux distribution (the peak value of the waveform and the average value of the waveform) / the average value of the waveform. Thus, when the fluctuation range of the heat flux distribution of the wafer 10 is too large, The generation of thermal stress, in addition to its lattice dislocation, and jumpers (that is, the interconnection of metal wires), will also cause the chemical f in the semiconductor process (this chemical is based on the process The rate of chemical reaction is not determined, so it will seriously affect the manufacturing yield of wafer 1210333 15321twf.doc / m, which will increase its manufacturing cost. Nowadays, as the size of wafer 10 becomes larger and larger And the integration degree of the integrated circuit is increased, and the problem caused by the large temperature distribution difference of the wafer 10 will be more serious. [Summary of the Invention] In view of this, the object of the present invention is to provide a method for the heat treatment process. It can be used to uniformly heat the wafer to increase the manufacturing yield of the wafer, thereby reducing its manufacturing cost. Another object of the present invention is to provide a heat treatment device that can be used to uniformly heat the wafer to increase The manufacturing yield of wafers, thereby reducing its manufacturing costs. The present invention proposes a method for adjusting the heat treatment process, which includes at least the following steps. First, 'a heating lamp group composed of a plurality of heating lamps is arranged in a to-be-heated' On the object, the heating lamps are arranged in an array of axisymmetric multiple turns%, and the riding systems are arranged in a -lap ratio, and the heating lamp group has an array center and has Line, where the radial line is connected by the centers of some of these heating lamps. Then, adjust the arrangement position of the heating lamp group and the object to be heated, so that the axis of the center of the array of the plus group and the object to be heated— Between the axes of the center: there is an offset vector of J-plane 'where the offset vector has an offset angle with the radial line center closest to this offset direction =' and this offset vector has an offset distance , = After touching some of the heating power of Canada, make these heating lamps = some _ separate job photos-power _ to age, let the object to be heated to its center and the heating lamp group to its array center, respectively The axis of the center of the heating object is opposite Turn, by adjusting the offset to 1240333 15321twf.doc / ni i ', so that the part of the object to be heated that was originally in the indirect irradiation area between two adjacent heating lamps will also pass through the heating lamp after being rotated. Directly irradiate the area, and adjust the circle ratio and the power ratio of these rings, so that the object to be heated can receive a uniform heat flux from the heating lamp group. According to the method for adjusting the heat treatment process according to the preferred embodiment of the present invention, before the step of disposing the heating lamp group on the object to be heated, the method further includes measuring and adjusting the heat flux of the single heating lamp to the object to be heated. The distribution step is to simulate the heat flux distribution of the heating lamp group composed of these heating lamps to the object to be heated. According to the method for adjusting the heat treatment process according to the preferred embodiment of the present invention, the shape of the object to be heated is, for example, a disk shape, which is, for example, a wafer, and the shape of the heating lamp is, for example, a circle. In addition, the number of these loops is 6, and the pitch ratio is 4/3: 15 u ·· 2; when the offset distance is e, then the loops of the heating lamp group include a first loop, A second circle ring, a third circle ring, a fourth circle ring, a fifth circle ring, and a sixth circle frame. The distance between the first circle ring and the second circle ring is L1 = 4e / 3, and The distance between the second circle and the third circle is L2 = 15e, and the distance between the third circle and the fourth circle is L3 = 2e, and the distance between the fourth circle and the fifth circle is L4-2e ' And the distance between the fifth ring and the sixth ring is L5 = 2e. When the diameter of the heating object is D, the offset distance e is obtained by a formula D / 2 = ^ Li + x, where X The value is 3mm. i = 1 According to the adjustment of the heat treatment process according to the preferred embodiment of the present invention, the horizontal angle is 15. And the power ratio of the first, second, third, fourth, fifth and sixth rings I24〇333twf_d〇c / m of these heating lamp groups is 31: 36 57: 71: 65: 99. In addition, a heat treatment device E 'is suitable for heating a to-be-heated object. This heat treatment device includes a chamber, and-a rotatable load + a stage is arranged in the chamber; "is arranged on a square-shaped transfer stage, and The heating lamp group is arranged in the chamber and on the rotatable stage. 'The heating lamp group has a plurality of heating lamps, and these plus lamps are arranged in an array of axisymmetric rings and these rings are: The circle distance is arranged proportionally. The heating lamp group has-the center of the array, and there is a radial line of the center of the array, wherein the radial line is formed by connecting the centers of some of the lamps. The axis of the center of the array of the heating lamp group There is a horizontal offset vector between the axis to be added, and the center axis, and the offset direction is inward, and the radial line adjacent to this offset vector has an offset angle, and the offset direction has-offset. The loops of these heating lamps are used to heat the object to be heated according to -power_. When the stage is rotatable, the object to be heated is centered on it and the heating lamp group is aligned along the center of the array. : Xingwaiting = Center of Hot Things The axis is relatively rotated, and by adjusting the offset inward, a part of the area to be heated originally under the indirect irradiation area between two adjacent heating lamps will also pass through the direct irradiation area of the heating lamp after rotation. And adjust the circle ratio and the power ratio of these rings, so that the object to be heated can receive a uniform heat flux from the heating lamp group. The present invention further provides a heat treatment device, which is suitable for heating an object to be added. The heat treatment device includes a chamber, a carrier, and at least one rotatable heat lamp group, wherein the carrier is disposed in the chamber, and the object to be heated is disposed on the carrier, and the rotatable heating lamp group is disposed in the chamber. And on the stage, 1240333 15321twf.doc / m Among them, the rotatable heating lamp group has a plurality of heating lamps, and these heating lamps are arranged in an array of axisymmetric rings, and the rings are in a -pitch ratio Arrangement. The rotatable heating lamp group has an array center and a radial line passing through the center of the array, wherein the radial line is connected by the centers of some of the heating lamps. Rotary heating The vehicle line at the center of the array of lamp groups ^ has a horizontal offset vector between the axis of the center of the object to be heated, and an offset angle between the offset vector and the radial line closest to the offset vector, and The offset vector has -offset distance. These loops of these heating lamps = according to the power ratio to heat the object to be heated. # 可 ㈣ When the heating lamp group rotates, the object to be heated is centered on it and the heating lamp group is Array center :: Qiaoping f The axis of the center of the array of this rotatable heating lamp group is used as a phase gate 'hunting adjustment offset vector' so that the object to be heated under the direct irradiation area of two adjacent heating lamps 12 Part of the area is set in the rotated back garden = direct illumination area of the heat lamp, and the circle ratio and these ratios are adjusted so that the object to be heated can receive the average / mainly from the heating lamp group. The heat treatment device described above, wherein this = not, if it is-disc-shaped, which is, for example, a wafer, and the shape of the ring, for example, is circular. In addition, the ring ratio of these rings is 4/3: 1 5 · 9 · 〇 ·. Example 2 of this circle in the Upper Bainen group; ί When the offset distance is e, at this time-the first circle circle includes a circle circle, a second circle ring, L a fourth circle ring,- The distance between the fifth circle and the sixth circle is the distance between the third circle and the second circle is L1 = 4e / 3, and the distance between the second circle and the first circle is L2r = 1.5e, and the third The distance between the ring and the fourth ring is 1240333 15321twf.doc / m. The distance is L3 = 2e, and the distance between the fourth ring and the second fifth ring and the sixth ring ... When the second = D, the offset distance is 6 · Where X value is 3mm. △ type 昀 = iSU-eX and learn that the heat treatment described in the preferred embodiment of Pingyang mr, where water = angle 15 'and the third and third ring of the heating lamp group The power ratio of the fourth ring, the fifth circle and the fifth circle and the sixth circle ring are 31 · 36 · 57: 71: 65 · · 99.
、依照本發明的較佳實施例所述之熱處理裝置，此 為一可旋轉載台。 口2. The heat treatment device according to the preferred embodiment of the present invention is a rotatable carrier. mouth
本發明之熱處理製程的調整方法以及熱處理裝置，由 於先量測單-加舰之熱通量分佈㈣、碰加熱燈組之 排列方式，再藉由控制加紐組之圈環的圈紐例、晶圓 =中心，加熱燈組的中心之偏移向量以及加熱燈之加熱功 率，使得待加熱物原先在兩相鄰之加熱燈間之非直接照射 區的部份，在旋轉的過程中也會行經加熱燈的直接照射 區，同理，原先在加熱燈直接照射區的待加熱物也會移動 至兩相鄰加熱燈間之非直接照射區，故可有效地讓晶圓表 面之熱通量達到均勻之分佈。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 【第一實施例】 12 1240333 15321twf.doc/m 圖3A繪示為本發明第一實施例之一種熱處理裝置的 剖面示意圖。圖3B繪示為圖3A之部分的加熱燈組的放大 俯視示意圖。請同時參照圖3A及3B，本發明之熱處理裝 置200例如包含一腔室21〇、一可旋轉載台22〇、一加熱燈 組230、一進氣口 240以及一抽氣口 250,其中可旋轉&台 220、加熱燈組230係配置於腔室21〇内，而加熱燈組23"〇 係配置於可旋轉載台220之上方，且加熱燈組23〇係由多 個單一之加熱燈232與燈罩234所組成，其中這些加熱燈 2^32例如為紅外線之函素燈。一待加熱物2〇係可配置於可 旋轉載台220上，而加熱燈組23〇係用以加熱此待加熱物 20。在本實施例中，此待加熱物2〇例如為一圓盤狀之晶 圓，而為了能夠方便控制由多個加熱燈232及其燈罩234 所組成之加熱燈組230對於待加熱物20之熱通量分佈情 況’因此，加熱燈232之形狀則例如設計成圓形，且加熱 燈組230亦例如為一圓盤(或短圓柱狀）。進氣口 24〇與抽 氣口 250係分別配置於腔室21〇之兩側，其中進氣口 24〇 係用以注入半導體製程所需之反應氣體，而抽氣口 250係 用以將反應氣體抽出。 凊同時參照圖3Α及3Β，本發明之熱處理製程之調整 方法例如包含下列數個步驟。首先，量測並調整單一之加 熱燈232及其燈罩234對於待加熱物20之熱通量分佈情 況’並以疊加(superpositi〇n)之數值運算方式，而模擬出由 多數個之單一加熱燈232及其燈罩234所組成之加熱燈組 230對於待加熱物2〇之熱通量分佈，其中此模擬步驟可於 13 1240333 15321twf.doc/m 實驗中進行。接著，將待加熱物20配置於上述之熱處理裝 置200内，其中加熱燈組230係由這些單一之加熱燈232 所組成，當待加熱物20例如為一圓盤狀之晶圓，且其直徑 為30cm時，而每一加熱燈232之直徑為2cm時，此時這 些加熱燈232可例如以軸對稱之六個圈環C1、C2、c3、 C4、C5、C6的陣列排列，其例如係以4/3 ·· i 5 ·· 2 ·· 2 ·· 2 =例配置。在本實施例中，圈環C1為加熱燈組230 歹〜。加熱燈組230具有多條徑向線R1、R2，豆 =^^_23〇之陣列中心’並由部分之這些加熱燈 组230 &ΓΪ線地連接而成。在本實施财，由於加熱燈 ;=為一圓盤(或短圓柱狀），因此，徑向線幻、幻 亦就疋加熱燈組230的直徑之延伸線。 視干部分的加熱敎與晶_放大俯 二 =r〇圖3八及3c，接著，調整加熱燈組 230與待加熱物2〇之配置位晋 中心（亦就是圈環α之位置)之陣列 之中心軸線A2之間具有轉A1與待加熱物20 向量v與最鄰近此偏移向量v V*其中偏移 ㈣，其中此偏移夹角心為之;向、=爽有-偏移夹 有-偏移距離e。 ，而此偏移向量V具 圖3D繪示為圖3A之部八沾a也 意圖。請參照圖3A及3D，卷二敕口 ：；、燈組的放大俯視示 燈組230之_ Cl、^離為e時，此時加熱 的距離為L2=L5e、圈環C3 ^ LWe/3、圈環C2、〇 C4的距離為L3=2e、圈環 I240ll_m C4、C5的距離為L4=2e以及圈環C5、C6的距離為L5=2e。 假設彳专加3熱物2〇之直徑為D時，此時偏移距離e係由一 八彳1V2:lL「e—x A式 1- 而得知，其中X值為3mm 〇 請同時參照圖3A及3B，之後，調整這些加熱燈232 之加熱功率，使得這些加熱燈232之這些圈環C1、C2、 C3 C4、C5、C6分別依照一功率比例來力口熱待力口熱物， 其中此功率比例譬如為31 : 36 : 57 : 71 ·· 65 ·· 99，且這些 圈環Cl、C2、C3、C4、C5、C6之功率例如可透過 PID(Proportional integration differentiation)之方式來控 制。然後，讓待加熱物20以其中心以及加熱燈組230以其 陣列中心分別沿著平行待加熱物2〇之中心軸線A2作相對 旋轉。請參照圖3C，藉由調整偏移向量v，將使得待加熱 物20原先在兩相鄰之加熱燈232之間的非直接照射區的部 份(如圖3C中a點的位置），在旋轉的過程中，也會行經 加熱燈232的直接照射區(如圖3C中b點的位置）。因此， 相較於習知熱處理裝置1〇〇,當本發明之熱處理裝置2〇〇 的加熱燈組230與待加熱物20在沿著平行待加熱物2〇之 中心軸線A2作穩速之相對旋轉，並搭配加熱燈232之圈 距比例與加熱功率後，此待加熱物2〇將可接收到來自加熱 燈組230之均勻的熱通量。 … 【第二實施例】 圖4緣示為本發明第二實施例之一種熱處理裝置的剖 面示意圖。相較於上述之第一實施例之熱處理裝置2〇〇， 第二實施例之熱處理裝置300的加熱燈組為一可旋轉加埶 15 1240333 15321twf.doc/m 燈組330，且熱處縣置· _台32()為非旋轉 :得當:嫌:熱燈組330旋轉時，此 = 中心以及此可旋轉加熱燈組现以其陣列中心分別π = 行此可旋轉加熱燈組33G之陣列中心的轴線6 晴= 轉。至於減理裝置遍的其他元件及其相對位置情开2 與第-實闕姻，在此便不再贅述。同樣地，如同本^ 明之第-實施例’藉由調整圈距比例、偏移距離e ^ 夾角β以及這些加熱燈332之加熱功率，使得待加熱物2〇 了接收來自可旋轉加熱燈組330之均勻的熱逍量。 【第三實施例】 1 圖5緣示為本發明第三實施例之一鋪處理裝置的气 面示意圖。相較於上述之第一實施例之熱處理裝置2〇〇: 第三實施例之熱處理裝置400的加熱燈組為一可旋轉的加 熱燈組430。至於熱處理裝置400的其他元件及其相對: 置炀形則與弟一實施例相同，在此便不再贅述。同樣地， 如同本發明之第一實施例，藉由調整圈距比例、偏移距離 e、偏移夾角<9以及這些加熱燈432之加熱功率，使得待加 熱物20可接收來自可旋轉加熱燈組430之均勻的熱通量。 以下係提供一熱通量分佈的曲線圖來佐證本發明所 能達到之功效。圖6繪示為本發明第一實施例之一種熱處 理裝置内之一晶圓經旋轉後，其熱通量分佈的曲線圖。請 同時參照圖3A及6，圖6之熱通量分佈曲線圖，係代表當 圖3A之待加熱物20為晶圓時，其徑向位置所接收到來自 加熱燈組230之熱通量分佈圖。圖6之熱通量分佈曲線圖 16 1240333 15321 twf.doc/m 的心軸係代表晶圓之徑向位置，而縱軸係代表晶圓所接收 之熱通量（單位為W/cm2)，其中横軸之數值為晶圓之實 際位向位置（單位為cm)，而橫軸之數值代表待加 熱物20 (例如為晶圓）之中心位置。 ，同時參照圖3 A及6，當待加熱物2 〇例如為一圓盤 狀之sa圓其直位例如為3〇cm，且每一加熱燈2%之直徑 為2cm時，此時加熱燈組230可由六個圈環CbC2、C3、 C4、C5及C6之加熱燈232所組成，且、 L3-2e、M=2e以及L5=2e，而偏移夾角0=15。，並套入上 籲 述之公式D/2 = ilLi —e—x = 7.833e-3 (職；），故可以求出 e=19.53mm，並調整加熱燈232之六個圈環α、q、〇、 C4、C5及C6的加熱功率比例為31 : 36 : 57 : 71 :幻：99。 結果得到如圖6中之熱通量分佈曲線，顯示本發明之熱處 理製程的調整方法以及熱處理裝置確實可以讓待加熱物 ， 20 (例如為晶圓等）表面之熱通量能夠達到均勻之分佈。 如圖6所示，待加熱物2〇之熱通量分佈的波動幅度約僅正 負Ο:5%左右。在此，賴之波純度乃是指熱通量分佈之 (波形的峰值-波形之平均值)/波形之平均值。 籲 當然’本發明之第二實施例與第三實施例之熱處理裝 置300、_在經過實驗後亦可達到類似上述之效果，亦即 待加熱物20的熱通量分佈波動幅度約正負〇5%左右，故 在此便不再重複贅述。 值得注意的是，本發明之熱處理製程的調整方法以及 熱處理裝置，其待加熱物未必限定為圓盤狀，亦可以為其 17 1240333 】5321 twf.doc/m 他之形狀，且待加熱物未必為晶圓，亦 溫之金屬，因此，本發明之熱處理製程泰 處理裝置未必僅用於半導體製程上，可π正/以及熱 溫的程中。t卜々k 、 亦可用於其他金屬加 直^及待力H 加熱燈之_個㈣由加熱燈之 數Lf r! 尺寸所決定，因此，加熱燈之圈環個 之#施_ “6’’個’亦可以為其他之個數 Α之個數），而相對應之加熱燈的_比例 TU4 4/3.1.5：2：2：2：2……：2 之比例（其中...·.· 本發明之熱處理製程的調整方法以及熱處 "/、加熱燈組未必僅位於待加熱物之一侧，亦可以 f兩個加驗时別配置於待加熱物之姆齡卜 發明所欲保護之範圍内。 本 綜上所述，相較於習知的熱處理裝置，本發明之埶處 理製程的調整方法以及熱處理裝置，由於先量測單一加熱 燈之熱通置分佈型態、調整加熱燈組之排列方式，再藉由 調整待加熱物之中心與加熱燈組的中心之偏移向量，^得 待加熱物原先在兩相鄰加熱燈之間的非直接照射區，在旋 轉的過程中也會行經加熱燈的直接照射區；同理，原先在 加熱燈之直接照射區下的待加熱物之區塊也會移動至兩相 2加熱燈之間的非直接照射區，並控制圈距比例以及加熱 燈之加熱功率，以此方式將可使得待加熱物在其徑向之熱 通量分佈趨於均勻，進而有效地讓待加熱物之熱通量達到 均勻之分佈。 雖然本發明已以較佳實施例揭露如上，然其並非用以 1240333 15321twf.doc/m 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内’當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1八繪不為習知之一種熱處理裝置的剖面示意圖。 圖1B繪示為圖1A之加熱燈組的俯視示意圖。 圖2繪不為習知之一種熱處理裝置内之一晶圓經旋轉 後’其熱通量分佈的曲線圖。 圖3A繪示為本發明第一實施例之一種熱處理裝置的 剖面示意圖。 圖3B繪不為圖3A之部分的加熱燈組的放大俯視示意 圖。 、圖3<：繪不為圖3A之部分的加熱燈組與晶圓的放大俯 視示意圖。 圖3D繪示為圖3A之部分的加熱燈組的放大俯視示 意圖。 一圖4繪示為本發明第二實施例之一種熱處理裝置的剖 面示意圖。 一圖5繪不為本發明第三實施例之一種熱處理裝置的剖 面示意圖。 圖6繪示為本發明第一實施例之一種熱處理裝置内之 一晶圓經旋轉後，其熱通量分佈的曲線圖。 【主要元件符號說明】 10 :晶圓 19 1240333 15321twf.doc/m 20 :待加熱物 100 ··熱處理裝置 110 :腔體 120 :載台 130 :加熱燈組 132 ··加熱燈泡 134 :燈罩 P、R :方向 200 :熱處理裝置 210 :腔室 220 :可旋轉載台 230 :加熱燈組 232 :加熱燈 234 ·•燈罩 240 :進氣口 250 :抽氣口 300 ··熱處理裝置 320 :可旋轉載台 330 :可旋轉加熱燈組 332 :加熱燈 400 :熱處理裝置 430 :可旋轉加熱燈組 432 :加熱燈 A1 :軸線 20 1240333 15321twf.doc/m A2 :中心軸線 B1 :軸線The method for adjusting the heat treatment process and the heat treatment device of the present invention measure the heat flux distribution of the single-canned ship and the arrangement of the heating lamp group, and then control the loop example of the loop of the Canadian group. Wafer = center, the offset vector of the center of the heating lamp group and the heating power of the heating lamp, so that the part of the object to be heated originally in the indirect irradiation area between two adjacent heating lamps will also be in the process of rotation Passing through the direct irradiation area of the heating lamp, the object to be heated originally in the direct irradiation area of the heating lamp will also move to the indirect irradiation area between two adjacent heating lamps, so the heat flux on the wafer surface can be effectively Achieve uniform distribution. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, preferred embodiments are described below in detail with reference to the accompanying drawings, as follows. [Embodiment] [First embodiment] 12 1240333 15321twf.doc / m FIG. 3A is a schematic cross-sectional view of a heat treatment device according to a first embodiment of the present invention. FIG. 3B is an enlarged schematic top view of the heating lamp group as a part of FIG. 3A. 3A and 3B at the same time, the heat treatment device 200 of the present invention includes, for example, a chamber 21, a rotatable stage 22, a heating lamp group 230, an air inlet 240, and an air inlet 250, among which the rotary & stage 220, heating lamp group 230 are arranged in the chamber 21, and the heating lamp group 23 " is arranged above the rotatable stage 220, and the heating lamp group 23 is composed of a plurality of single heating lamps 232 and a lampshade 234, where the heating lamps 2 ^ 32 are, for example, infrared light function lamps. A to-be-heated object 20 is disposed on the rotatable stage 220, and a heating lamp group 23 is used to heat the to-be-heated object 20. In this embodiment, the object to be heated 20 is, for example, a disc-shaped wafer, and in order to be able to conveniently control a heating lamp group 230 composed of a plurality of heating lamps 232 and its lampshade 234 for the object to be heated 20 Heat flux distribution 'Therefore, the shape of the heating lamp 232 is, for example, designed as a circle, and the heating lamp group 230 is also a disc (or a short cylinder), for example. The air inlet 24 and the air outlet 250 are respectively disposed on both sides of the chamber 21, where the air inlet 24o is used to inject the reaction gas required for the semiconductor process, and the air inlet 250 is used to extract the reaction gas . 3A and 3B, the method for adjusting the heat treatment process of the present invention includes, for example, the following steps. First, measure and adjust the heat flux distribution of a single heating lamp 232 and its cover 234 to the object 20 to be heated and superimpose numerical calculation methods to simulate a single heating lamp with a plurality of The heat flux distribution of the heating lamp group 230 composed of 232 and its lampshade 234 to the object to be heated 20, wherein this simulation step can be performed in the experiment of 13 1240333 15321twf.doc / m. Next, the object to be heated 20 is arranged in the above-mentioned heat treatment device 200, wherein the heating lamp group 230 is composed of these single heating lamps 232. When the object to be heated 20 is, for example, a disc-shaped wafer, and its diameter When the diameter is 30 cm and the diameter of each heating lamp 232 is 2 cm, the heating lamps 232 can be arranged in an array of six rings C1, C2, c3, C4, C5, and C6, which are axisymmetric, for example. 4/3 ·· i 5 ·· 2 ·· 2 ·· 2 = Example configuration. In this embodiment, the ring C1 is a heating lamp group 230230 ~. The heating lamp group 230 has a plurality of radial lines R1, R2, and an array center 'of beans = ^^ _ 23〇, and is formed by connecting a part of these heating lamp groups 230 with a line ground. In this implementation, since the heating lamp; = is a disc (or a short cylinder), the radial line magic and the magic line are also the extension lines of the diameter of the heating lamp group 230. The heating element and crystal of the visual stem part are magnified, as shown in Figure 38 and 3c. Then, adjust the array of the center of the heating lamp group 230 and the object to be heated 20 (that is, the position of the ring α). Between the central axis A2, there is a vector A between the rotation A1 and the object to be heated, v, and the offset vector v V * which is closest to it, where the offset ㈣, where the offset angle is the center of it; direction, = Shuangyou-offset clip Yes-Offset distance e. 3D is shown in FIG. 3A as the part of FIG. 3A. Please refer to Figs. 3A and 3D, Volume II ::, the enlarged view of the lamp group 230 of the lamp group 230_Cl, ^ distance is e, at this time the heating distance is L2 = L5e, ring C3 ^ LWe / 3 The distance between the rings C2 and 0C4 is L3 = 2e, the distance between the rings I240ll_m C4 and C5 is L4 = 2e, and the distance between the rings C5 and C6 is L5 = 2e. Assume that when the diameter of 彳 +3 hot objects 20 is D, the offset distance e at this time is known from 1V2: 1L, e-x A formula 1-, where the X value is 3mm 〇 Please also refer to 3A and 3B, after that, the heating power of the heating lamps 232 is adjusted so that the rings C1, C2, C3, C4, C5, and C6 of the heating lamps 232 are used to heat the hot objects according to a power ratio. The power ratio is, for example, 31: 36: 57: 71..65..99, and the power of the loops Cl, C2, C3, C4, C5, and C6 can be controlled by means of PID (Proportional integration differentiation). Then, let the object to be heated 20 rotate relative to its center and the heating lamp group 230 with its array center along the central axis A2 parallel to the object to be heated 20. Please refer to FIG. 3C, by adjusting the offset vector v, The part of the object to be heated 20 that was originally in the indirect irradiation area between two adjacent heating lamps 232 (as shown by point a in FIG. 3C) will also pass directly through the heating lamp 232 during the rotation process. Irradiated area (as shown at point b in Fig. 3C). Therefore, compared with the conventional heat treatment device 1 〇, when the heating lamp group 230 of the heat treatment device 200 of the present invention and the object to be heated 20 rotate relatively at a constant speed along the central axis A2 of the object to be heated 20, and match the circle ratio of the heating lamp 232 After heating and heating power, the object to be heated 20 will receive a uniform heat flux from the heating lamp group 230. [Second Embodiment] Fig. 4 shows an example of a heat treatment device according to a second embodiment of the present invention. A schematic sectional view. Compared with the heat treatment device 200 of the first embodiment described above, the heating lamp group of the heat treatment device 300 of the second embodiment is a rotatable plus 15 1240333 15321twf.doc / m lamp group 330, and the heat The county set _ Taiwan 32 () is non-rotating: proper: suspect: when the hot lamp group 330 rotates, this = center and this rotatable heating lamp group are now centered by their arrays π = this rotatable heating lamp group 33G The axis 6 of the center of the array is clear = turn. As for the other elements of the reduction device and their relative positions, they are not related here, and will not be repeated here. Similarly, like the first implementation of this Example 'By adjusting the circle ratio, the offset distance e ^ the angle β and this The heating power of the heating lamps 332 enables the object to be heated 20 to receive a uniform amount of heat from the rotatable heating lamp group 330. [Third embodiment] 1 FIG. 5 shows one of the third embodiments of the present invention. Schematic diagram of the surface of the coating treatment device. Compared with the heat treatment device 2000 of the first embodiment described above: The heating lamp group of the heat treatment device 400 of the third embodiment is a rotatable heating lamp group 430. As for the heat treatment device 400 The other components and their relatives: the placement shape is the same as that of the first embodiment, and will not be repeated here. Similarly, as in the first embodiment of the present invention, by adjusting the circle ratio, the offset distance e, the offset angle < 9, and the heating power of these heating lamps 432, the object to be heated 20 can receive the rotatable heating The uniform heat flux of the lamp group 430. The following is a graph of the heat flux distribution to prove the effect that the present invention can achieve. FIG. 6 is a graph showing a heat flux distribution of a wafer in a thermal processing apparatus according to the first embodiment of the present invention after the wafer is rotated. Please refer to FIGS. 3A and 6 at the same time. The heat flux distribution curve of FIG. 6 represents the heat flux distribution received from the heating lamp group 230 in the radial position when the object to be heated 20 in FIG. 3A is a wafer. Illustration. The heat flux distribution curve of Fig. 6 The mandrel system of 16 1240333 15321 twf.doc / m represents the radial position of the wafer, and the vertical axis represents the heat flux received by the wafer (unit is W / cm2). The value on the horizontal axis is the actual orientation position of the wafer (unit is cm), and the value on the horizontal axis represents the center position of the object to be heated 20 (for example, the wafer). Referring to FIGS. 3A and 6 at the same time, when the object to be heated 20 is, for example, a disc-shaped sa circle, its upright position is, for example, 30 cm, and the diameter of each heating lamp 2% is 2 cm, at this time, the heating lamp The group 230 may be composed of six heating lamps 232 of CbC2, C3, C4, C5, and C6, and L3-2e, M = 2e, and L5 = 2e, and the offset angle is 0 = 15. And put in the formula D / 2 = ilLi —e—x = 7.833e-3 (position;), so we can find e = 19.53mm and adjust the six rings α, q of the heating lamp 232 The heating power ratios of 0, 0, C4, C5, and C6 are 31: 36: 57: 71: magic: 99. As a result, a heat flux distribution curve as shown in FIG. 6 is obtained, which shows that the adjustment method and the heat treatment device of the heat treatment process of the present invention can indeed enable the heat flux on the surface of the object to be heated, such as a wafer, to achieve a uniform distribution. . As shown in Fig. 6, the fluctuation range of the heat flux distribution of the object to be heated 20 is only about plus or minus 0: 5%. Here, the Lai Zhibo purity refers to the heat flux distribution (the peak value of the waveform-the average value of the waveform) / the average value of the waveform. "Of course," the heat treatment device 300 of the second embodiment and the third embodiment of the present invention can also achieve similar effects as described above after the experiment, that is, the fluctuation range of the heat flux distribution of the object to be heated 20 is about plus or minus 0.5 %, So I will not repeat them here. It is worth noting that the method for adjusting the heat treatment process and the heat treatment device of the present invention, the object to be heated may not be limited to a disc shape, and may also be 17 1240333】 5321 twf.doc / m other shapes, and the object to be heated may not be It is a wafer and a warm metal. Therefore, the heat treatment process and the processing device of the present invention are not necessarily used only in the semiconductor process, and can be π positive / and thermal temperature. t々 々k, can also be used for other metals plus straight ^ and waiting force H_ The number of heating lamps is determined by the number of heating lamps Lf r! size, therefore, the circle of heating lamps # 施 _ "6 ' 'A' can also be the number of the other number A), and the corresponding _ ratio of the heating lamp TU4 4 / 3.1.5: 2: 2: 2: 2 ...: 2 ratio (where ... ·. · The adjustment method and heat treatment of the heat treatment process of the present invention " /, the heating lamp set may not be located only on one side of the object to be heated, but may also be placed on the object to be heated during the two inspections. Within the scope of protection, as described above, compared with the conventional heat treatment device, the adjustment method and heat treatment device of the 埶 treatment process of the present invention, because the heat through distribution pattern of a single heating lamp is first measured, Adjust the arrangement of the heating lamp group, and then adjust the offset vector between the center of the object to be heated and the center of the heating lamp group, so that the object to be heated was originally in the indirect irradiation area between two adjacent heating lamps, and was rotating In the process, it will also pass through the direct irradiation area of the heating lamp; similarly, the original The area of the object to be heated under the irradiation area will also move to the indirect irradiation area between the two-phase 2 heating lamps, and the circle ratio and the heating power of the heating lamp will be controlled. In this way, the object to be heated will The radial heat flux distribution tends to be uniform, which effectively makes the heat flux of the object to be heated reach a uniform distribution. Although the present invention has been disclosed as above with a preferred embodiment, it is not used for 1240333 15321twf.doc / m Limiting the present invention, anyone skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the scope of the attached patent application. [Brief description of the figure] Figure 1 is a schematic cross-sectional view of a conventional heat treatment device. Figure 1B is a schematic top view of the heating lamp group of Figure 1A. Figure 2 is not a crystal of a conventional heat treatment device. A curve of the heat flux distribution after the circle is rotated. FIG. 3A is a schematic cross-sectional view of a heat treatment device according to the first embodiment of the present invention. FIG. 3B is not a view of the heating lamp unit of FIG. 3A Large top plan view. Figure 3 < Enlarged top plan view of the heating lamp group and wafer not shown in Figure 3A. Figure 3D is an enlarged top plan view of the heating lamp group in Figure 3A. Figure 4 FIG. 5 is a schematic cross-sectional view of a heat treatment device according to a second embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a heat treatment device according to a third embodiment of the present invention. A graph of the heat flux distribution of a wafer in the device after it is rotated. [Description of the main component symbols] 10: Wafer 19 1240333 15321twf.doc / m 20: To-be-heated 100 ·· Heat treatment device 110: Cavity 120: stage 130: heating lamp group 132 ... heating bulb 134: lampshade P, R: direction 200: heat treatment device 210: chamber 220: rotatable stage 230: heating lamp group 232: heating lamp 234, lampshade 240 : Air inlet 250: Air inlet 300 ·· Heat treatment device 320: Rotatable stage 330: Rotatable heating lamp group 332: Heating lamp 400: Heat treatment device 430: Rotatable heating lamp group 432: Heating lamp A1: Axis 20 1240333 15321twf.d oc / m A2: center axis B1: axis
Cl、C2、C3、C4、C5、C6 :圈環 D :直徑 LI、L2、L3、L4、L5 :距離 Rl、R2 :徑向線 V :偏移向量 X :數值 0 :偏移夾角 a、b :位置 e·偏移距離Cl, C2, C3, C4, C5, C6: Ring D: Diameter LI, L2, L3, L4, L5: Distance Rl, R2: Radial line V: Offset vector X: Value 0: Offset angle a, b: Position e. Offset distance
21twenty one