1239613 有鑑於此，就有進一步之 體之散熱基板 熱基板及散熱 E D )在照明 )必須擺脫傳 至數百倍，而 必然是數倍甚 必須將傳統的 變，其中在發 改進，以提昇 )是透 例如A ;A 1 phi 並不1¾ 數增加 應下， 體發光 於在南 有效處 散熱基 成長方 G a P a N材 材料， 在依倍 疏散， 光效率 於高溫 用的發 五、發明說明（1) 【發明所屬之技術領域】 本發明係為一種發光二極 ’尤指適用於發光二極體的散 法。 【先前技術】 面臨未來發光二極體（L 用，使得發光二極體（L E D 圍’將增加電流增加至數倍甚 (L E D )的功率消耗上，也 加 ^然’為達到高亮度效果 L E D )的製作方式進行大改 E D )的散熱上須作更有效的 L E D )的發光效率。 傳統發光二極體（L E D 光結構成長於適當的基板上， 蠢晶基板便選用G a A s材料 晶基板便選用藍寶石（S a p 材料所製成的基板熱傳導效率 的鬲電流輸入時，無法將依倍 蠢晶的半導體發光結構在熱效 減，同時，長期讓磊晶的半導 ’其壽命因此嚴重縮短，以致 體（L E D )必須對熱疏散做 及其製造方法 基板之製造方 及顯示上的應 統小電流的範 在發光二極體 至數百倍的增 發光二極體（ 光二極體（L 發光二極體（ 式將發 材料的 料的磊 但這些 數增加 而導致 嚴重衰 狀態下 光二極 於發光二極體1239613 In view of this, there are further heat dissipation substrates, thermal substrates and heat dissipation ED) in lighting) must be rid of hundreds of times, and it must be several times, even the traditional changes, which are in progress to improve) It is transparent, such as A; A 1 phi does not increase as the number increases. The body emits light from the heat sink base G a P a N material, which is evacuated multiple times, and the light efficiency is high temperature. Explanation (1) [Technical field to which the invention belongs] The present invention is a light-emitting diode, especially a scattering method suitable for light-emitting diodes. [Previous technology] Facing future light-emitting diodes (L, the LED diodes will increase the current to several times the power consumption of the LED, and also increase the LED to achieve high-brightness effects. The manufacturing method of) must be greatly changed. The heat dissipation of LED must be made more effective. Traditional light-emitting diodes (LED light structures are grown on appropriate substrates, and stupid crystal substrates are made of G a A s material. Crystal substrates are made of sapphire (Sap material). When the heat conduction efficiency of the substrate is not input, The thermal efficiency of the semiconductor light-emitting structure of Epistar is reduced, and at the same time, the lifetime of the epitaxial semiconductor is severely shortened, so that the body (LED) must be thermally evacuated and its manufacturing method is on the substrate manufacturer and display. The range of the small current should be from the light-emitting diode to hundreds of times the light-emitting diode (light-emitting diode (L light-emitting diode)). However, these numbers increase and cause a serious decay state. Downlight Diode to Light Emitting Diode
I ΪΗ 1239613 五、發明說明（2) (L E D )之發展，其作法為將傳統 的：：：導體發光結構黏著於。基板上，利用s3: i 基板佳，因此達到減少發光二】 率衰減之目的，但S i基板係為半導 =，：此隨溫度上升，其導熱效果隨之迅速衰退，铁 極體之;;Η基板亦編，以致未能有效解決發光二 里仏因此、’在自然界中導熱最好之材料為金屬，其導熱效 :比半導體基板佳，如金、銀、銅或 ^ 因溫度上升而迅速下降，但這些金屬並不能：接： = :;;(LED)之基板，原因為金屬之膨脹係數 =於+導體材料之膨脹係冑，若直接將發光二極體（l =D )結構直接黏著於金屬基板上’則在發光二極體（二 2結構的製程中’ *熱融合、烘烤等均會因金屬基板 …、β脹而破壞其晶袼結構，而導致發光二極體（L E D )結構損壞，因此如何尋找合適之散熱基板及製作其 亦為重要的課題。 〃 緣是，發明人乃根據此等缺失及依據多年來從事勢造 產品之相關經驗，悉心觀察且研究之，乃潛心研究並配人 學理之運用，而提出一種設計合理且有效改善該缺失之二 發明。 【發明内容】 本發明案之其一目的，在於提供一種發光二極體之散 熱基板，其產生高導熱及低膨脹之效果，且合適作為發光 二極體結構之散熱基板。 依據前述發明目的，本發明係為一種發光二 2t，用以將發光二極體結構設置於該散熱基 蜍卷政該發光二極體結構之熱量， 脹體及高導埶體之料」、处Μ , 双…、丞极 一 〒”、、菔您彳政小結構，且相互連接牽制， 高導熱低膨脹之發光二極體散熱基板。 ^ 種發光二極體之散熱基板，用以將發光二 j置於該散熱基板上，以傳導發散該發光二極體 篁，該散熱基板包括低膨脹層體及高導熱層體， ，層體分別固設於該低膨脹層體上侧及下側，藉 问V熱層體傳導該發光二極體結構之熱量，且藉 脹層體限制該高導熱層體之膨脹程度。 一種發光二極體之散熱基板，用以將發光二 ，置於該散熱基板上，以傳導發散該發光二極體 里，該散熱基板包括銅鶴合金或銅鉬合金組成之 一種發光二極體之散熱基板製作方法，其步 形成低膨脹層體；及 分別形成高導熱層體於該低膨脹層體上側 以形成高導熱及低膨脹之散熱基板，且該低膨脹 高導熱層體相互連接且限制。 一種發光二極體之散熱基板製作方法，其步 提供高導熱粉體及低膨脹粉體； 混合該高導熱粉體及該低膨脹粉體； 壓合該混合後之高導熱粉體及低膨脹粉體 •極體之散 、板上，以 .包括低膨 藉以形成 極體結構 結構之熱 且該高導 以利用該 由該低膨 極體結構 結構之熱 板體。 驟包括： 及下側， 層體與該 驟包括： 成為固形 1239613 五、發明說明（4) 體；及 燒結該壓合之固形體，以形成高導熱低膨脹之散熱 基板。 一種發光二極體之散熱基板製作方法，其步驟包括： 提供低膨脹粉體； 壓合該低膨脹粉體成為固形體； 燒結該壓合後之固形體，以形成具有孔隙之燒結 體； 使液相高導熱體含浸滲入該燒結體之孔隙内；及 固化該液相高導熱體於該燒結體内，以形成高導熱 低膨脹之散熱基板。 為了使貴審查員能進一步了解本發明之特徵及技術 内容，請參閱以下有關本發明之詳細說明及附圖，缺而所 :圖示僅提供參考與說明用，並非用來對本發明加以限制 【實施方式】 請，閱第-圖至第六圖所示，本發明係、為―種發光二I ΪΗ 1239613 V. Description of the invention (2) (L E D) The development of the method is to adhere to the traditional ::: conductor light-emitting structure. On the substrate, the use of s3: i substrate is good, so the purpose of reducing the luminous second] rate attenuation is achieved, but the Si substrate is a semiconducting = ,: as the temperature rises, its heat conduction effect will rapidly decline, and ferrites will; ; ΗThe substrate is also compiled so that it can not effectively solve the problem of light emitting 二. Therefore, 'the material with the best thermal conductivity in nature is metal, and its thermal conductivity is better than that of semiconductor substrates, such as gold, silver, copper, or ^ due to temperature rise. Rapidly decline, but these metals cannot: connect: =: ;; (LED) substrate, the reason is the expansion coefficient of the metal = the expansion system of the conductor material, if the light-emitting diode (l = D) structure directly Adhere directly to the metal substrate 'in the process of the light-emitting diode (two-two structure') * Thermal fusion, baking, etc. will destroy the crystal structure of the metal substrate due to β expansion, resulting in light-emitting diodes (LED) structure is damaged, so how to find a suitable heat-dissipating substrate and make it is also an important subject. 〃 The reason is that the inventor based on these shortcomings and based on years of experience in making products, carefully observe and study the Research Combined with the application of human theory, a second invention with reasonable design and effective improvement of this deficiency is proposed. [Summary of the Invention] One object of the present invention is to provide a heat-dissipating substrate of a light-emitting diode, which generates high thermal conductivity and low heat dissipation. The effect of expansion is suitable as a heat-dissipating substrate of a light-emitting diode structure. According to the foregoing object of the invention, the present invention is a light-emitting diode 2t for setting the light-emitting diode structure on the heat-dissipating substrate The heat of the body structure, the material of the expanded body and the high-conductivity body ", the processing M, the double ..., the poles and the small structure", and the small structure of your government, which are connected to each other, and the high thermal conductivity and low expansion light-emitting diode A heat-dissipating substrate. A heat-dissipating substrate of a light-emitting diode is used to place the light-emitting diode j on the heat-dissipating substrate to conduct and disperse the light-emitting diode 篁. The heat-dissipating substrate includes a low-expansion layer body and a high heat-conducting layer body. The layers are fixed on the upper and lower sides of the low-expansion layer, respectively, and the V-heat layer is used to conduct the heat of the light-emitting diode structure, and the expansion layer is used to limit the degree of expansion of the high-thermal-conductivity layer. hair A light-emitting diode heat-dissipating substrate is used to place a light-emitting diode on the heat-dissipating substrate to conduct and dissipate the light-emitting diode. The heat-dissipating substrate includes a light-emitting diode composed of a copper crane alloy or a copper-molybdenum alloy. A substrate manufacturing method includes the steps of forming a low-expansion layer body; and forming a high-thermal-conductivity layer body on the low-expansion layer body to form a high-thermal-conductivity and low-expansion heat-dissipating substrate, and the low-expansion high-thermal-conductivity layer body is connected and restricted to each other. A method for manufacturing a heat-dissipating substrate for a light-emitting diode, which comprises the steps of providing a high thermal conductivity powder and a low expansion powder; mixing the high thermal conductivity powder and the low expansion powder; laminating the mixed high thermal conductivity powder and low expansion The powder and the polar body are dispersed on the board to include the heat of low expansion to form the structure of the polar body structure and the high conductance to utilize the hot plate body of the structure of the low expansion pole body structure. The steps include: and the lower side, the layer body and the steps include: becoming a solid body 1239613 V. Description of the invention (4) body; and sintering the pressed solid body to form a heat dissipation substrate with high thermal conductivity and low expansion. A method for manufacturing a heat-dissipating substrate for a light-emitting diode includes the steps of: providing a low-expansion powder; pressing the low-expansion powder into a solid body; sintering the pressed solid body to form a sintered body having pores; The liquid-phase high heat-conducting body is impregnated into the pores of the sintered body; and the liquid-phase high-heat-conducting body is solidified in the sintered body to form a heat-radiation substrate with high thermal conductivity and low expansion. In order to enable your examiner to further understand the features and technical contents of the present invention, please refer to the following detailed description of the present invention and the accompanying drawings. What is missing: the drawings are provided for reference and explanation only, and are not intended to limit the present invention. Embodiment] Please refer to Figures-6 to 6, the present invention is
Si Κΐ板，：以將發光二極體結構1 〇設置於該散 散數a板；發散該發光二極體結構1 〇之熱量 之二以ίϊ低膨脹體21及高導熱體2 2製成 相互連以藉二 體21及該高導熱體22 基板。 a夕成同¥ ”，、低膨脹之發光二極體散熱 之散熱基板2 請參閱第二®所示，其中該發光二極體 1239613 -— 五、發明說明（5) - 0，其包括低膨脹層體2 1，及高導熱層體2 2，， 導熱層體2 2 ,分別固接於該低膨脹層體2 ；[,之上μ鬲 ，因士此將該發光二極體結構2 ◦設置於該高導熱層，， 上時，即可利用該高導熱層體2 2，傳導該發光: 1 構1 0產生之熱量，且藉由該低膨脹層體2丄，限 古結 =熱層體2 2，之膨脹程度，以致於避免該發光二極^ = :2 Ϊ晶袼因該高導熱層體2 2,之膨脹而破壞，且； =二脹層體2 1係可為鎢（w )金屬板體或翻（μ。7 、’屬板體，且該等板體係軋壓一起或焊接一 熱層體2 2，係可為燒結體，苴分別或該局導 1，之上下兩侧。 ，、刀別叹於該低膨脹板體2 ，:該發光二極體之散熱基板製作方法， 形成低膨脹層體2 1，；及 /、少驟馮· 分別形成高導熱層體2 ?，於姑把& ρ 及下側，該低膨脹層體2 1，盥哕=: χ層體2 1 ’上側 接且限制該高導熱層體2 2，胗=咼=:層體2 2，相互連 用蒸鍍、電鍍、熔鑄或電鑄方心、制。.、中該等層體係可利 示，係可進一步於該高導熱岸;二。且請參閱第三圖所 該低膨脹層體2 1，，且依庠^ L之外側分別在形成 體2 2，，因此形成多層狀之鸯^ =側再加上該高導熱層 請參閱第四圖所示，其中\ :: 〇 ° 〇包括低膨脹體2 1及高導熱" 一極體之散熱基板2 連接牽制，藉以形成高導熱；^妗1 2之微小結構，且相互 1 〇，其中該低膨脹體2 1 ^ :嚴之發光二極體散熱基板 U小結構係為低膨脹粉體2 1239613 五、發明說明（6) 1 ’且可為嫣（W)金屬粉體或翻（M〇 )金屬粉體、 鑽石粉體或碳化矽（s i C)粉體等，該高導熱體2 2之 微小結構係可為高導熱粉體2 2 ’’，且可為銅等金屬粉， 並用燒結方式使該低膨脹粉體2 1 π及該高導熱粉體2 2 ” 燒結成燒結體之散熱基板2 〇，其製作步驟包括·· 提供高導熱粉體2 2 ”及低膨脹粉體2 1 π ; 混合該高導熱粉體2 2，，及該低膨脹粉體2 1 ” ； 壓合該混合後之高導熱粉體2 2 "及低膨脹粉體2 1 π成為固形體；及 燒結該壓合成之固形體，以形成高導熱低膨脹之散 熱基板2 0。 5月茶閱第五圖所示，另一製作方法’其步驟包括： 提供低膨脹粉體2 1，，； 壓合該低膨脹粉體2 1 ”成為固形體； 燒結該壓合後之固形體，以形成具有孔隙之燒結 體； 使液相高導熱體2 2含浸滲入該燒結體之孔隙内； 及 / 固化該液相高導熱體2 2於該燒結體内，以形成高 導熱低膨脹之散熱基板2 〇。 且其中該液相高導熱體係為銅（C u )等金屬溶液。 再則’睛參閱第六圖所示，該發光二極體之散熱基板 2 0係可銅鶴合金或銅銦合金製作，且可利用燒結銅鶴合 金粉體或銅鉬合金粉體，以形^高傳熱低膨脹之散熱基板Si Κΐ plate: The light emitting diode structure 10 is set on the scattering number a plate; the heat of the light emitting diode structure 10 is two, which is made of low expansion body 21 and high thermal conductor 22. The two bodies 21 and the highly thermally conductive body 22 are connected to each other. Same as ¥ ”, a low-expansion light-emitting diode heat-dissipating heat-dissipating substrate 2 Please refer to the second ®, where the light-emitting diode 1239613--5. Description of the invention (5)-0, which includes low The intumescent layer body 21, and the high thermally conductive layer body 22, and the thermally conductive layer body 2 2 are respectively fixed to the low-expansion layer body 2; [, above μ 鬲, because of this, the light-emitting diode structure 2 ◦It is placed on the high thermal conductivity layer, and when it is on, the high thermal conductivity layer body 2 2 can be used to conduct the luminescence: 1 structure 1 0 heat generated by the structure, and the low expansion layer body 2 丄, limit ancient knot = The degree of expansion of the thermal layer body 22, so that the light-emitting diode ^ =: 2 Ϊ 袼 is damaged due to the expansion of the highly thermally conductive layer body 2, 2; Tungsten (w) metal plate body or turned (μ.7, 'is a plate body, and these plate systems are rolled together or welded a hot layer body 2 2, which can be sintered body, rhenium or the local guide 1, The upper and lower sides. Please do n’t sigh about the low-expansion plate 2: the method for manufacturing the heat-dissipating substrate of the light-emitting diode to form a low-expansion layer 2 1; Layer 2 ，, Yu Gu; & ρ and the lower side, the low-expansion layer 2 1, 哕 =: χ layer 2 1 ′ is connected to the upper side and restricts the highly thermally conductive layer 2 2, 胗 = 咼 =: The layer body 22, the interconnections are formed by evaporation, electroplating, melting or electroforming of square cores, etc .. The layer system can be displayed, which can be further on the high thermal conductivity bank; 2. Please refer to the third figure The low-expansion layer body 21 is formed on the outside of the formation body 2 according to the outer side of the L ^ L, so a multi-layered 鸯 ^ = side is added together with the high thermal conductivity layer, as shown in the fourth figure, where \ :: 〇 ° 〇 Including low expansion body 21 and high thermal conductivity " The connection of the heat dissipation substrate 2 of a polar body is restricted to form a high thermal conductivity; ^ 妗 1 2 is a micro structure and is mutually 1 〇, where the low expansion body 2 1 ^: Yan Zhi's light-emitting diode heat dissipation substrate U small structure is a low-expansion powder 2 1239613 V. Description of the invention (6) 1 ′ and can be a (W) metal powder or a (M〇) metal powder Body, diamond powder or silicon carbide (si C) powder, etc., the microstructure of the high thermal conductor 22 can be a high thermal conductivity powder 2 2 ″, and can be metal powder such as copper, and sintering method The low-expansion powder 2 1 π and the high-thermal-conductivity powder 2 2 ”are sintered into a heat-dissipating substrate 2 0 of a sintered body, and the manufacturing steps include providing a high-thermal-conductivity powder 2 2” and a low-expansion powder 2 1 π; Mixing the high thermal conductivity powder 2 2 and the low expansion powder 2 1 ”; pressing the mixed high thermal conductivity powder 2 2 " and the low expansion powder 2 1 π into a solid body; and sintering the pressure Synthesize a solid body to form a high-thermal-conductivity and low-expansion heat-dissipating substrate 20. As shown in the fifth figure of May Tea, another method of production includes the steps of: providing a low-expansion powder 2 1,; The expanded powder 2 1 "becomes a solid body; sintering the compacted solid body to form a sintered body with pores; impregnating the liquid-phase high thermal conductor 2 2 into the pores of the sintered body; and / and curing the liquid phase A high thermal conductor 22 is formed in the sintered body to form a thermally conductive substrate 20 with high thermal conductivity and low expansion. And the liquid-phase high thermal conductivity system is a metal solution such as copper (C u). Then, referring to the sixth figure, the heat dissipation substrate 20 of the light-emitting diode can be made of copper crane alloy or copper indium alloy, and sintered copper crane alloy powder or copper molybdenum alloy powder can be used to form ^ Heat transfer substrate with high heat transfer and low expansion
1239613 五、發明說明（7) 2 0° 綜上所述，藉由本發明之「發光二極體之散熱基板」 ，即可產生高導熱及低膨脹之效果，且使該發光二極體結 構設置於該散熱基板上時，不會因該散熱基板之熱脹冷縮 而破壞發光二極體結構。 惟以上所述僅為本發明之較佳可行實施例，非因此拘 限本發明之專利範圍，故舉凡運用本發明之說明書及圖示 内容所為之等效結構變化，均同理皆包含於本發明之範圍 内，給予陳明。1239613 V. Description of the invention (7) 20 ° In summary, by using the "radiating substrate of the light emitting diode" of the present invention, the effects of high thermal conductivity and low expansion can be produced, and the structure of the light emitting diode can be set. When on the heat-dissipating substrate, the light-emitting diode structure will not be damaged due to the thermal expansion and contraction of the heat-dissipating substrate. However, the above are only the preferred and feasible embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Therefore, any equivalent structural changes made by using the description and illustrated contents of the present invention are included in the same reason. Within the scope of the invention, Chen Ming was given.
第11頁 1239613 圖式簡單說明 第一圖係本創作之發光二極結構體及散熱基板之組合圖。 第二圖係本創作之層狀發光二極體散熱基板示意圖。 第三圖係本創作之層狀發光二極體散熱基板另一示意圖。 第四圖係本創作之燒結體狀之發光二極體散熱基板示意 圖。 第五圖係本創作之燒結體狀之發光二極體散熱基板另一示 意圖。 第六圖係本創作之合金組成之發光二極體散熱基板示意 圖。 【圖示中參考號數】 本發明 發光二極體結構1 〇 散熱板體2 0 低膨脹體2 1 低膨脹層體2 1 ’ 低膨脹粉體2 1 π 高導熱體2 2 高導熱層體2 2’ 高導熱粉體2 2 πPage 11 1239613 Brief description of the diagram The first diagram is a combination diagram of the light-emitting diode structure and the heat-dissipating substrate. The second figure is a schematic diagram of the layered light-emitting diode heat dissipation substrate of this creation. The third figure is another schematic diagram of the layered light emitting diode heat dissipation substrate of this creation. The fourth picture is a schematic diagram of the sintered body-shaped light-emitting diode heat-dissipating substrate. The fifth figure is another illustration of the sintered body-shaped light-emitting diode heat sink substrate. The sixth figure is a schematic diagram of the light-emitting diode heat dissipation substrate composed of the alloy created by this invention. [Reference number in the figure] The light-emitting diode structure of the present invention 1 〇 heat-dissipating plate body 2 0 low-expansion body 2 1 low-expansion layer body 2 1 ′ low-expansion powder 2 1 π high heat-conducting body 2 2 high-heat-conducting layer 2 2 'High thermal conductivity powder 2 2 π
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