TWI237068B

TWI237068B - Metal finishing apparatus and metal finishing method using the same

Info

Publication number: TWI237068B
Application number: TW91122241A
Authority: TW
Inventors: Bae-Soon Jang; Mun-Ho Han; Se-Chul Park
Original assignee: Samsung Techwin Co Ltd
Priority date: 2002-09-26
Filing date: 2002-09-26
Publication date: 2005-08-01

Abstract

A metal finishing apparatus and a metal finishing method using the same are provided. The metal finishing apparatus includes an electrolytic bath, an electrolyte contained in the electrolytic bath, a positive electrode dipped into the electrolyte, a negative electrode dipped into the electrolyte, and a membrane installed between the positive electrode and the negative electrode, and having fine pores to selectively permeate particular ions dissolved in the electrolyte during an electrode reaction from one electrode to another electrode.

Description

1237068 五、發明說明一案號 (1) 91122241 修正【發明有關之領域】本發明係為一種金屬精整裝置，尤指一種具有可將陰陽極彼此分離的薄膜（m e m b r a n e )，且該薄膜係設置於― 電極槽（electrolytic bath)中以避免將異物電解沈澱至電極上之金屬精整裝置及使用彼之金屬精整方法。【先如技術之敘述】一般而言，半導體導線架得依據半導體晶片的高密度性和高整合性以及其設置方法而有著不同的形狀。半導體 ^線采係由銅或鐵合金製成的，而不同種類的雜質易黏附於其原料的表面。1237068 V. Description of the Invention Case No. (1) 91122241 Amendment [Fields related to the invention] The present invention is a metal finishing device, especially a membrane (membrane) capable of separating cathode and anode from each other, and the membrane is provided A metal finishing device in an "electrolytic bath" to avoid electrolytic precipitation of foreign matter on the electrodes and the use of another metal finishing method. [Previous description of technology] Generally speaking, semiconductor lead frames have different shapes depending on the high density and integration of semiconductor wafers and the way they are installed. Semiconductors are made of copper or iron alloys, and different types of impurities easily adhere to the surface of their raw materials.

^ 因此，為了能夠取得想要的半導體導線架之形狀，ϋ ^ έ用到餘刻、.沖壓、以及電解拋光方式，將氧化物從乃料表面予以去除來增加其水平效果的程序是有必要的。在外進行線結合（write-bonding )的程序時，對於將一 /、有f別形狀的半導體導線架與一半導體晶片作電性的$ ^亦是必要的。再者，對於改善結合性能、防腐蝕性和矣衣效率而言，電鍍程序更是必要。第\圖係為一習知金屬精整裝置的電解拋光裝置1 〇。^ Therefore, in order to obtain the desired shape of the semiconductor lead frame, it is necessary to use the engraving, stamping, and electrolytic polishing methods to remove the oxide from the surface of the material to increase its horizontal effect. of. When performing a wire bonding (write-bonding) process outside, it is also necessary to electrically connect a semiconductor lead frame having a different shape to a semiconductor wafer. Furthermore, the plating process is necessary to improve the bonding performance, corrosion resistance, and coating efficiency. Figure \ is an electrolytic polishing device 10 of a conventional metal finishing device.

如第1圖所示，該電解拋光裝置1〇包括一電解槽Η，有一陽極12，一陰極13和置於陽極12和陰極13之5 ' 液14 &極12係為一由銅或鐵合金製成的半導體与 ^架，而陰極1 3係為一不銹鋼（sus )或鉑極板 ' 二。此外，電解液14則為一含有60± ” 3 的水浴液（aqueous s〇iuti〇ri)。As shown in FIG. 1, the electrolytic polishing device 10 includes an electrolytic cell, having an anode 12, a cathode 13, and a 5 'liquid 14 placed on the anode 12 and the cathode 13. The electrode 12 is a copper or iron alloy The fabricated semiconductor is made of metal, and the cathode 13 is a stainless steel (sus) or platinum plate. In addition, the electrolyte 14 is a water bath (aqueous sooiutiori) containing 60 ± "3.

第6頁 1237068Page 6 1237068

该倚槽1 6則透過一供應通道丨7和一回流通道丨8而與電解槽11相通。一可噴出電解液丨4的喷嘴丨9係設於電解槽^ ^ 底部。具有上述結構的習知電解拋光裝置丨0具有下列的反應模式。日鋼原子會失去電子而溶解為銅離子的氧化反應係發生於陽極12上，而銅離子接收電子而還原為銅原子的還原反應則發生在陰極1 3上。然而’習知的金屬精整裝置有下列缺點：第一，沈澱物（sludge )形成於電解槽中，並且沿著 · 電解液1 4的流動而電解沈澱於陽極丨2的表面上。由陽極1 2 分解的金屬離子和陰極1 3表面的電解液丨4之間反應凝結 (coagulated)的沈澱物係為含有大量jj2〇成分之雜質。此外’作為陽極1 2的產品上之沈澱物亦無法經由表面清洗程序而完全去除，因而導致產品的劣質性。第二，電解沈澱於陰極1 3表面上的沈澱物會持續增加直到陰極1 3完全為沈澱物所覆蓋。因此，電流 (c u r r e n t )效率急速下降而降低了電解拋光 (electropolishing)的速度。所以，為了去除沈澱物，金屬精整裝置必需規律地重覆進行洗淨的程序，而且要暫⑩ 時停止驅動該裝置。特別是一直排式的裝置，例如半導體導線架，必需完全地中止驅動。第三，電解液1 4會因沈澱物而惡化 (deter i orate )，度因而降低。所以，溶液必需一直進行裝滿的動作。The leaning tank 16 communicates with the electrolytic tank 11 through a supply channel 7 and a return channel 8. A nozzle 9 capable of ejecting the electrolyte 丨 4 is arranged at the bottom of the electrolytic cell ^ ^. The conventional electrolytic polishing apparatus having the above structure has the following reaction modes. The oxidation reaction of Nippon Steel atoms that loses electrons and dissolves into copper ions occurs on anode 12, and the reduction reaction of copper ions receiving electrons to reduce to copper atoms occurs on cathode 13. However, the conventional metal finishing device has the following disadvantages: First, a sludge is formed in the electrolytic cell, and electrolytically precipitates on the surface of the anode 2 along the flow of the electrolytic solution 14. The coagulated precipitate that reacts between the metal ions decomposed by the anode 1 2 and the electrolytic solution 4 on the surface of the cathode 13 is an impurity containing a large amount of jj20 components. In addition, the precipitates on the product used as the anode 12 cannot be completely removed through the surface cleaning process, which leads to the inferiority of the product. Second, the precipitate deposited on the surface of the cathode 13 by electrolytic deposition will continue to increase until the cathode 13 is completely covered by the precipitate. As a result, the current (cu r r e n t) efficiency drops rapidly, reducing the speed of electropolishing. Therefore, in order to remove the sediment, the metal finishing device must regularly repeat the washing process, and the device must be stopped and driven temporarily. Especially in-line devices, such as semiconductor lead frames, must completely stop driving. Thirdly, the electrolyte solution 14 is deteriorated due to deposits, and the degree is reduced. Therefore, the solution must be filled at all times.

第四，產生於陽極的反應副產物（byproduct)係電解殿於陰極表面上，並於金屬電鍍時形成一電鍍層，因而嚴重影響電解層，並降低了電解液的使用壽命。【發明目的】為了解決上述問題，本發明的主要目的，即在於發明出一種金屬精整裝置之改善及使用彼之金屬精整方法，其結構係具有一薄膜，其功能為有選擇性地讓特定離子從二陽極滲透至一陰極，該薄膜係設於電解槽中，並抑制異物的生成反應以及避免異物電解沈澱於電極上。 /、Fourth, the reaction byproducts (byproducts) generated from the anode are on the surface of the cathode, and a plating layer is formed during metal plating, which seriously affects the electrolytic layer and reduces the service life of the electrolyte. [Objective of the Invention] In order to solve the above problems, the main object of the present invention is to invent an improvement of a metal finishing device and a method for metal finishing using the same. The structure is provided with a thin film and its function is to selectively allow The specific ions penetrate from the two anodes to the one cathode, and the film is set in an electrolytic cell, and suppresses the generation reaction of foreign matter and prevents the electrolytic precipitation of the foreign matter on the electrode. /,

本發明之另一目的在於提供一金屬精整裝置及使用彼之金屬精整方法，其藉由收集電解液的特定離子來解槽的濃度度化。、、【解決方式】為了達到上述第一個目裝置，其包括一電解槽、一沒入於電解液之陽極、一沒於陽極和陰極之間的薄膜，於電極反應中分解於電解液過至另一電極。的本兔明没计了一金屬精整容置於電解槽中的電解液、一入於電解液之陰極以及一設置其具有許多細孔來選擇性地讓中之特疋離子從一電極滲透通板二為一受拋光的結構，而陰極係為-金屬陽極表面予==藉由電Ϊ拋光程序從陽極分解出來對衣曲于以平坦化，而金屬離子藉 _ 滲透至陰極來避免金屬沈澱物生成於陰極表面且隔而無法Another object of the present invention is to provide a metal finishing device and a metal finishing method using the same, which collect the specific ions of the electrolytic solution to deconcentrate the tank. [Solution] In order to achieve the first device mentioned above, it includes an electrolytic cell, an anode submerged in the electrolyte, and a thin film submerged between the anode and the cathode. It is decomposed in the electrode reaction by the electrolyte. To another electrode. The rabbit does not include a metal-refined electrolytic solution placed in an electrolytic cell, a cathode inserted into the electrolytic solution, and a device having many pores to selectively permeate special ions in it from an electrode. The second plate is a polished structure, and the cathode is-the surface of the metal anode. = = The electrode is decomposed from the anode by the electric polishing process to flatten the clothes, and the metal ions penetrate into the cathode to prevent metal precipitation. Products are generated on the surface of the cathode and cannot be separated

構；ί外全：：：ί:f屬’而陰極係為-受電鍵之結 ^^從％極分解出來而電^^極表面，並 1237068 修正曰 MM 9119.99/11 五、發明說明（4) 陽極的反應剎產品因為薄膜的阻隔而無法滲透進入陰 Μ ^ A金屬精整裝置另包括一離子收集部，其可收集於電解h 一側之電解液中的金屬離子或反應副產品。依據本發明之使用金屬精整裝置之金屬精整方法，其包括下列步驟： &^準^二具有陽極和陰極之電解槽，兩者皆沒入入電解液 W ^ :分離陽極和陰極的薄膜，其具有無數細孔來選擇性地讓特定離子從一電極滲透至另一電極： $ :電流至電解槽中來產生一電極反應，而從一電極分 3 =的#定離子可避免渗透至其它電#内；以及，子7 ▲由一離子收集部來收集於電極反應中所產生的特定離固定子收集·部係連接至電解槽的一側以維持電解液之參閱3 ^瞭解本發明之構造特徵、技術内容與功能，請供炎去；有關本發明之詳細說明與附圖，然而所附圖示乃 =考_用，並非用以對本創作施 L圖不簡單說明】 $ =^圖係為一習知金屬精整裝置示意圖。圖係為一本創作金屬精整萝一 — 第3圖係為依據，圖之金屬精整裝、其^yt』；外全 ::::: genus and the cathode system is-the junction of the acceptor bond ^^ is decomposed from the% electrode and the electrode surface is ^^, and 1237068 amended MM 9119.99 / 11 V. Description of the invention (4 ) The reaction brake product of the anode cannot penetrate into the negative metal ^ A metal finishing device because of the barrier of the thin film. The metal finishing device further includes an ion collection part, which can collect metal ions or reaction byproducts in the electrolytic solution on the side of the electrolysis h. A metal finishing method using a metal finishing device according to the present invention includes the following steps: & ^^^ An electrolytic cell having an anode and a cathode, both of which are immersed in an electrolyte W ^: Thin film, which has numerous pores to selectively allow specific ions to penetrate from one electrode to another: $: Electric current flows into the electrolytic cell to generate an electrode reaction, and 3 = # definite ions from one electrode can avoid penetration To other electric #; and, 子 7 ▲ Collects a specific ion holder generated in the electrode reaction by an ion collection part. The part is connected to one side of the electrolytic cell to maintain the electrolyte. Refer to 3 For the structural features, technical contents and functions of the invention, please send them to the writer; for the detailed description and drawings of the present invention, the attached diagram is for reference only, and is not intended to explain the drawing. ^ The figure is a schematic diagram of a conventional metal finishing device. The picture series is a creative metal finishing Luo Yi — The third picture series is based on the metal finishing package, its ^ yt "

^ 與時間變化之關係圖。 X 第4圖係為依據第2圓之金屬精整裝置、其磷舻 (Ph〇Sph〇ric acid)濃度與時間變關你R 麫圖係為依據第2圖之金屬精整裝置、於一二：：圖。 -健槽中銅離子濃度與時間變化之關係圖。曰口 1237068^ Relation to time. X Figure 4 is a metal finishing device based on the second circle, and its Phosphoric acid concentration and time change. R Figure 4 is a metal finishing device based on Figure 2. 2 :: Figure. -A graph of the relationship between copper ion concentration and time change in the well. Mouth 1237068

第6圖係為依據第2圖之金屬精整裝置、其污染值與間變化之關係圖。【詳細内容】第2圖係為本發明金屬精整裝置中電解拋光裝置“ 一較佳實施例示意圖。如第2圖所示，電解拋光裝置2〇包括一電解槽21，其内具有一陽極22，一陰極23和置於陽極22和陰極23之間〃的電解液24。陽極22係為一半導體導線架，其為銅或鐵^金製成的拋光材料，而陰極23係為一不銹鋼（sus )或鉑極板（platinum grid )。此外，電解液24則為一使用高電流的酸性溶液，且以含有60 ± 5 %H3P03的水溶液一 (—^Q.uθ〇Us solution) /^7 幸交 ^[圭。此外’ 一設於電解槽21的薄膜20 0係用來避免由陽極 2 2溶解的銅離子和陰極2 3表面的電解液2 4之間反應生成的沈澱物，其電解沈澱於陽極2 2上。该膜2 0 0係設於一可分離陽極2 2和陰極2 3的位置，它為一像是濾紙或明膠（c e 1 1 u 1 〇 i d )的薄層物，其具有無數細孔，並有選擇性地僅讓特定離子滲透通過。而且，該薄膜200可避免由陽極22溶解的銅離子電解沈殿於陰極23 上，並有選擇性地僅讓Η +離子滲透通過。一具有第一幫浦25的第一儲槽26設置於電解槽21下方。該第一儲槽26包括與陽極室30_(_p〇sitive electrodecell)相通之一第一供應通道27和一第一回流通道28 ’其用來供應並回收陽極室3〇的電解液24，該陽極室 30係藉由一薄膜200而與陰極室4〇相分離。經由第一供應Fig. 6 is a graph showing the relationship between the pollution value and the variation of the metal finishing device according to Fig. 2. [Details] FIG. 2 is a schematic diagram of a preferred embodiment of the electrolytic polishing device in the metal finishing device of the present invention. As shown in FIG. 2, the electrolytic polishing device 20 includes an electrolytic cell 21 having an anode therein. 22, a cathode 23 and an electrolyte 24 interposed between the anode 22 and the cathode 23. The anode 22 is a semiconductor lead frame, which is a polishing material made of copper or iron, and the cathode 23 is a stainless steel (Sus) or platinum grid. In addition, the electrolyte 24 is an acidic solution using a high current, and an aqueous solution containing 60 ± 5% H3P03 (-^ Q.uθ〇Us solution) / ^ 7 Fortunately, ^ []. In addition, a thin film 20 0 provided in the electrolytic cell 21 is used to avoid the precipitate formed by the reaction between the dissolved copper ions of the anode 2 2 and the electrolyte 24 on the surface of the cathode 23. Electrolytically deposited on the anode 22. The film 200 is located at a position where the anode 22 and the cathode 23 can be separated, and it is a thin layer of material like filter paper or gelatin (ce 1 1 u 1 oid). It has countless fine pores and selectively allows only specific ions to penetrate therethrough. Moreover, the film 200 The copper ion dissolved by the anode 22 is prevented from being electrolyzed on the cathode 23, and only thallium + ions are selectively penetrated through. A first storage tank 26 having a first pump 25 is disposed below the electrolytic tank 21. The first A storage tank 26 includes a first supply passage 27 and a first return passage 28 that communicate with the anode chamber 30 _ (_ positive electrode cell), and is used to supply and recover the electrolyte 24 in the anode chamber 30. The anode chamber 30 It is separated from the cathode chamber 40 by a thin film 200. Via the first supply

第10頁 1237068Page 10 1237068

皇號9112mi 五、發明說明（6) 通道27所供给之帝, X. 0 , 嘴29來噴出、。％解液24可透過一設於電解槽21底部之喷而將黛^ μ工由—第二供應通道2 70和一第三回流通道2 8〇部220二Λ槽』6連結於一倆有一第三幫浦260的離子收集子〜二子收集部220係於電解拋光程序進行時供應電中的銅離子，使之還原於銅’因而避免銅 94η/者/具有—第二幫浦23°，並且與-第二供應通道 1报一_ 流通道25〇一相接來將電解液24從陰極室4〇 ^ ^應並回收的程序之第二儲槽21〇_係設置於電解槽以的電解"ί :解液24具有相同成份、且供應至陽極室30 、1 /之或一 ¥電拋光溶液則收集於第二儲槽2丨〇内。 *預：i t本發明電解拋光裝置20具有下列反應機制：二於陽極22和陰極23銅原子失雨電子而分解為钔碓子之虱化反應係發生於陽極22上。此時，陰極2 3之"定離子因為薄。而仍以ΞΙ之i由陽極22分解之銅離子無法滲透通過，至膜_的細孔移動至陰極室40内。因有此h，'-/於m由薄析出之銅離子無法移動，而因為銅離子、二極22離就無法沈積至陰極23表面。所以，在電解=物的反應物之產生，以及將沈澱物電解沈澱於：：：：澱避免。％肛衣面上皆可予以Emperor 9112mi V. Description of the Invention (6) The emperor supplied by channel 27, X. 0, spouts from mouth 29. The% solution 24 can be connected through a spray provided at the bottom of the electrolytic cell 21-the second supply channel 2 70 and a third return channel 2 80, 220, 220, Λ tank, one to two, one to one The ion collector-secondary collector 220 of the third pump 260 supplies the copper ions in the electricity during the electrolytic polishing process, so that it is reduced to copper, thus avoiding copper 94η / person / has—the second pump 23 °, And the second storage channel 1 is connected to the first flow channel 2501 to connect the second storage tank 21o of the procedure for applying and recovering the electrolyte 24 from the cathode chamber 4o ^ to the electrolytic tank. Electrolysis: The solution 24 has the same composition, and is supplied to the anode chamber 30, and / or the electropolishing solution is collected in the second storage tank 2. * Pre: i t The electrolytic polishing device 20 of the present invention has the following reaction mechanism: Two, the anode 22 and the cathode 23 lose the rain electrons of copper atoms and decompose into lice, and the lice reaction occurs on the anode 22. At this time, the cathode ions are thin. However, the copper ions still decomposed by the anode 22 at Ξi cannot pass through, and the pores to the membrane move into the cathode chamber 40. Because of this, the copper ions precipitated from the thin film '-/ m' cannot be moved, but cannot be deposited on the surface of the cathode 23 because the copper ions and the second electrode 22 are separated. Therefore, avoid the generation of reactants in electrolysis and electrolysis of the precipitate in :::: precipitation. % Can be given on the anal surface

1237068 ------室號 91122ΑΠ 五、發明說明（7) 回流通道2 8 0流動至離子收集部2 2 〇在電解液24中的銅離子濃度即可避 2 8、第一儲槽2 6和第來收集銅離子。因此免升高。一例ί =方法亦可適用於藉用—適#金屬作為陽極和用 σ + V體導線架之電鍍結構作為陰極來進行電鍍程兔換T之，即使在電鍍過程中產生陽極反應的副產品，為於陽極室和陰極室之電鍍溶液得予以個別獨立之控於’曰以^藉由在電解槽中之陽極和陰極之間設置一薄膜， ;陽極室所產生之電鍍副產品就無法影響陰極室。 =本發明申請人應用電解拋光裝置2〇所進行的果可結論於下：為於每一容·置室中之電解產的濃度和銅沈澱物的生與蚪間之變化時間表。表一曰士陰極室陽極室沈澱物電解】τ ) W酸（％ )銅（％ )碟酸（％ )銅（％ )沈殿於陰極 64. 3 益 64. 2 0· 75 益 4\\\ 64. 3 62. 3 1. 23 益 Ο、、 64. 6 益 4 59. 7 1· 71 62. 9 益 58. 7 2. 36 Μ 曰夺門 —τ =表一所示，陽極22係為一半導體導線架，而陰極為不錄鋼（S Π S、a / 解液24含有#於）或極板（Platinum grid) °再者’電光的時門 K次°於電解槽2 1供給60 A/dm2的電流’而拋 --、長度為2小時。此時，用來避免特定離子，例如1237068 ------ Room number 91122ΑΠ 5. Description of the invention (7) The return channel 2 8 0 flows to the ion collection part 2 2 0 The concentration of copper ions in the electrolyte 24 can be avoided 2 8. The first storage tank 2 6th and 1st to collect copper ions. So avoid raising. One example = method can also be applied to borrow-suitable metal as anode and σ + V body lead frame plating structure as cathode for electroplating process in place of T, even if by-products of anode reaction are generated during electroplating, for anode The plating solution of the chamber and the cathode chamber can be controlled individually and independently. By setting a thin film between the anode and the cathode in the electrolytic cell, the plating by-products produced by the anode chamber cannot affect the cathode chamber. = The results of the application of the electrolytic polishing device 20 by the applicant of the present invention can be concluded as follows: For each container, the concentration of the electrolytic product in the container and the time schedule for the change between the copper deposits and the copper deposits. Table 1 Electrolyte precipitation in anode and cathode compartments of the cathode room] τ) W acid (%) copper (%) disc acid (%) copper (%) Shen Dian at the cathode 64. 3 益 64. 2 0 · 75 益 4 \\\ 64. 3 62. 3 1. 23 Yi 0, 64. 6 Yi 4 59. 7 1 · 71 62. 9 Yi 58. 7 2. 36 Μ is the gate—τ = shown in Table 1, the anode 22 is A semiconductor lead frame, and the cathode is made of non-recording steel (S Π S, a / solution 24 contains # 于) or a plate (Platinum grid) ° Furthermore, the electro-optical time gate K times ° In the electrolytic cell 2 1 supply 60 A / dm2 electric current 'and throw-, the length is 2 hours. This is used to avoid specific ions, such as

案號Case number

内的陽極 1237068 五、發明說明（8) 銅離子，滲透通過的薄膜2 0 〇係設置於電解槽2 j 22和陰極23之間。 9 依據貫驗結果，當拋光程序進行兩小時的時間長产，在陽極室30的磷酸濃度則從64. 2%變為62· 3%，59· 7變^ 58· 7%，然而，銅離子則由〇· 75g/1變為 · 1"、變，，/卜換言之，隨著時間消逝，陽“30=1 酸/辰度漸漸降低，而銅離子濃度逐漸增加。這是因極22分解出來的銅離子無法滲透通過薄膜2〇〇，且< ~ 於陽極室3 0内。遠Internal anode 1237068 V. Description of the invention (8) The thin film 200 through which copper ions permeate is set between the electrolytic cell 2 j 22 and the cathode 23. 9 According to the results of the inspection, when the polishing process was performed for two hours, the phosphoric acid concentration in the anode chamber 30 changed from 64.2% to 62.3%, and 59.7 changed to ^ 58.7%. However, copper The ions change from 0.75 g / 1 to 1.7, change, in other words, with the passage of time, the "30 = 1" acid / Chen degree gradually decreases, and the copper ion concentration gradually increases. This is because the pole 22 The decomposed copper ions cannot penetrate through the thin film 200, and < ~ within the anode chamber 30. 远

_ on ' — w從主“門的嶙駸濃度從64. 3%變A 64.W ’從64.6%變為62.9%，換言之，麟酸濃度的變 Ϊ膜二:广出.有銅離子存在。而此意含著，銅離子因為缚膜200的阻隔而無法從陽 α為沈澱物無法電解沈殿於陰極23表面上動至陰極至4〇。故銅_ on '— w The radon concentration from the main gate changed from 64.3% to A 64.W' from 64.6% to 62.9%, in other words, the change in the concentration of linoleic acid is also known as Membrane 2: Wider. There are copper ions present This means that copper ions cannot be changed from yang α to Shendian because of the blocking film 200. Shen Dian can not move on the surface of the cathode 23 to 40. Therefore, copper

第3圖係為銅離子濃度與時間變化之軸代表時間，γ軸代表銅離子 1陽_中’ X 化。連線B為陰極室4 0内銅離子濃度的變如團所示濃度逐漸増加，的消逝’隹陽極室3〇内的銅離」的銅離子濃變不變。“：不2 : Τ面’在陰極室40 ρ 離子無法移動至险搞。、口為由除極22分解出來的名解液之間的反靡二Y ，銅沈澱物亦無法因為銅離子和^ ^㈤^反應而形成於陰極23的表面。第4圖係為石舞酸代表時間，γ輛七本’又一寸日1雙化之關係圖，其中，X車 Y釉代表磷酸濃度平Fig. 3 shows the axis of change in copper ion concentration and time representing time, and the γ axis represents copper ion 1 yang_middle 'X conversion. The connection B is the change of the copper ion concentration in the cathode chamber 40. As shown in the figure, the concentration gradually increases, and the copper ion concentration in the evanescent copper ion within the anode chamber 30 does not change. ": No 2: T facet" in the cathode chamber 40 ρ ions can not be moved to the messenger. The mouth is the second solution between the famous solution decomposed by the depolarizer 22, and the copper precipitate cannot be caused by the copper ions and ^ ^ ㈤ ^ formed on the surface of the cathode 23. Figure 4 shows the relationship between stone dance acid and time, γ car seven books, another inch of day, and double digitization, where X car Y glaze represents phosphoric acid concentration level

1237068 餘91體41 五、發明說明（9) 度的變化，連線B為陰極室4〇内磷酸濃度的變化。如圖所示，隨著時間的消逝，在陽極度逐漸降低。另一古& , ^ 至3 0内的磷酸濃一面，在陰極室4 0内的鱗酸濃戶：換言之，在陽極22内銅離子嘈声撗a 二* 辰度不變。低。钔離子展度增加，而磷酸濃度就降第5圖係為於電解槽21和第一儲槽26中鋼離子濃产連線c代表於電解槽21内銅離子濃度的變二銅為在第一儲槽26内的銅離子濃度的變化。 ΛΙ) 、農产”時間的消逝，在電解槽21内的銅離子展^、漸牦加。另一方面，在第一儲槽26内的銅離子 ί Ϊ雜：一儲槽26内銅離子濃度降低的原因為銅離ΐ 被收集至離子收集部220内。 m十第6圖係為於第一储槽26中污圖，其中，X軸代表時間’Y軸代表污染值々線二值』時間變化之關係圖。而此時所供給的電流強度為 :圖所示，隨著時間的消逝’在第一儲槽⑼内的污染 ^有下降的趨勢’這是因為由電解槽21分解出來的銅離子的收集比率於離子收集部22〇内相對增加。 ^上所述，依據本發明的金屬精整裝置及使用彼之金 ^和產方法，藉由在陽極和陰極之間設置一薄膜和收集特定離子即可擁有下列優點：第一、由陽極分解出來的離子無法蔣叙$恰枝，m二_1237068 余 91 体 41 V. Description of the invention (9) The change in degree (9), the connection B is the change of phosphoric acid concentration in the cathode chamber 40. As shown in the figure, as time passes, the degree of anodicity gradually decreases. On the other hand, the phosphoric acid concentration within the range of ^ to 30 is the concentration of scale acid in the cathode chamber 40: In other words, the copper ion noise 撗 a * in the anode 22 does not change. low. The hafnium ion spread increases, and the phosphoric acid concentration decreases. Figure 5 shows the concentration of steel ions in the electrolytic cell 21 and the first storage tank 26. The line c represents the change in copper ion concentration in the electrolytic cell 21. Changes in copper ion concentration in a storage tank 26. ΛΙ), agricultural production ", the passage of time, the copper ions in the electrolytic cell 21 spread and gradually increase. On the other hand, the copper ions in the first storage tank 26 are doped: the copper ions in a storage tank 26 The reason for the decrease in concentration is that the copper ion is collected into the ion collection unit 220. The tenth and sixth graphs are the dirt maps in the first storage tank 26, where the X-axis represents time and the Y-axis represents pollution value 々 line binary value "The relationship diagram of the change in time. At this time, the intensity of the current supplied is: As shown in the figure, 'the pollution in the first storage tank ^ has a tendency to decrease' with the passage of time. This is because it is decomposed by the electrolytic tank 21 The ratio of the collected copper ions is relatively increased in the ion collection section 22. ^ As mentioned above, according to the metal finishing device of the present invention and the use of the metal ^ and production method, by providing a between the anode and the cathode Thin films and collection of specific ions can have the following advantages: First, the ions decomposed by the anode cannot be Jiang Xu

第14頁 1237068 91122241 五、發明說明（10) 形成。再者，沈殿物而大大地降低產品不良率年Page 14 1237068 91122241 V. Description of Invention (10) Formation. Furthermore, Shen Dianwu greatly reduced the rate of defective products.

電解沈殿於陽極之程序得以避免，因第二、由於沈澱物無間的電固定水力故而第三、得以延第四、無法移惟非用來圍所作蓋，特流率率準。此得以提由於電長。由於發動至陰以上所限定本之均等先予以可避免外，由昇。解液的生在陽極，電述者，發.明實變4匕與陳明。法電解沈澱於陽極表面上，相叫丄相對於 I1牛低。因此，拋光速度得以維持於— 於逸期性的清潔步驟得以減少，、— 生產惡化的情況降低，電解液的更換時間極的陽極反應之副產品在電錢過程中鍍溶液得以有效控制。僅為本發明之一較佳實施例而已，並施之範圍。即凡依本發明申請專利範修飾，皆為本發明申請專利範圍所含The electrolysis of Shen Dian on the anode was avoided because of the second, because the precipitates had no fixed electric power, the third, the extension was possible, and the fourth, they could not be moved, but they were only used to cover the cover. The special flow rate was accurate. This is due to the electric length. Since the equality of the limited editions launched above Yin can be avoided first, the promotion is promoted. Xieye was born at the anode, the electric narrator, the hair. Mingshi changed 4 knives and Chen Ming. Electrolytic precipitation on the surface of the anode, called 丄 is relatively low compared to I1. As a result, the polishing speed can be maintained—reduced fugitive cleaning steps are reduced, production degradation is reduced, electrolyte replacement time, and the by-products of the anode reaction are effectively controlled during the battery process. It is only one preferred embodiment of the present invention, and the scope of implementation is only. That is, any modification according to the patent application scope of the present invention is included in the scope of the patent application for the invention

第15頁 1237068 _案號 91122241 圖式簡單說明修正【圖示簡單說明】第1圖係為一習知金屬精整裝置示意圖。第2圖係為一本創作金屬精整裝置一較佳實施例示意圖第3圖係為依據第2圖之金屬精整裝、其銅離子濃度與時間變化之關係圖。第4圖係為依據第2圖之金屬精整裝置、其磷酸 (p h 〇 s p h 〇 r i c a c i d )濃度與時間變化之關係圖。第5圖係為依據第2圖之金屬精整裝置、於一電解槽和一儲槽中銅離子濃度與時間變化之關係圖。Page 15 1237068 _ Case No. 91122241 Simple description of the drawing Amendment [Simplified illustration of the picture] Figure 1 is a schematic diagram of a conventional metal finishing device. Fig. 2 is a schematic diagram of a preferred embodiment of a creative metal finishing device. Fig. 3 is a relationship diagram of copper ion concentration and time change according to the metal finishing device according to Fig. 2. Fig. 4 is a graph showing the relationship between the concentration of phosphoric acid (p h ○ s p h ○ r i c a c i d) and time according to the metal finishing device according to Fig. 2. Fig. 5 is a graph showing the relationship between the concentration of copper ions in an electrolytic cell and a storage tank and the time change according to the metal finishing device of Fig. 2.

第6圖係為依據第2圖之金屬精整裝置、其污染值與時間變化之關係圖。【主要元件符號.說明】Fig. 6 is a graph showing the relationship between the pollution value and the time change of the metal finishing device according to Fig. 2. [Main component symbol. Explanation]

1 0電解拋光裝置 11電解槽 1 2陽極 13陰極 1 4電解液 1 5幫浦 16儲槽 1 7供應通道 1 8回流通道 1 9喷嘴 2 0電解拋光裝置 2 1電解槽 22陽極 23陰極 2 4電解液 2 5第一幫浦 2 6第一儲槽 2 7第一供應通道 2 8第一回流通道 2 9喷嘴 3 0陽極室 4 0陰極室 2 0 0薄膜 2 1 0第二儲槽1 0 electrolytic polishing device 11 electrolytic cell 1 2 anode 13 cathode 1 4 electrolyte 1 5 pump 16 storage tank 1 7 supply channel 1 8 return channel 1 9 nozzle 2 0 electrolytic polishing device 2 1 electrolytic cell 22 anode 23 cathode 2 4 Electrolyte 2 5 First pump 2 6 First storage tank 2 7 First supply channel 2 8 First return channel 2 9 Nozzle 3 0 Anode chamber 4 0 Cathode chamber 2 0 0 Thin film 2 1 0 Second tank

第16頁案號 91122241 1237068 圖式簡單說明 2 2 0離子收集部 240第二供應通道 2 6 0第三幫浦 2 8 0第三回流通道修正 2 3 0第二幫浦 2 5 0第二回流通道 2 7 0第三供應通道Case No. 91122241 1237068 on page 16 Brief description of the diagram 2 2 0 Ion collection section 240 Second supply channel 2 6 0 Third pump 2 8 0 Third return channel correction 2 3 0 Second pump 2 5 0 Second return Channel 2 7 0 Third supply channel

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Claims

1 · 一種金屬精整裝置，主要包括·· 一電解槽；一谷置於電解槽的電解液；一沒入於電解液的陽極；一沒入於電解液的陰極；一設置於陽極和陰極之間的薄膜，其具夕來遥擇性地讓於電極反應中分解於電解液^ ^ 、、、孔一電極滲透通過至另一電極。；以及，特疋離子從的金屬離子或反應副產品 2_如申請專利範圍第丨項所述之金屬精敕壯中，陽極係為一受拋光結構，而陰極係為其另，金屬離子藉由電解拋光程序從陽，面予以平坦化，而金屬離子藉由薄膜的將陽極表陰極來避免金屬沈澱物生成於陰極表面。 "、、法滲透至中中中另 3·如申請專利範圍第2項所述之金屬精陽極係為一導線架。《 h整裝置，其 4·如申請專利範圍第2項所述之金屬牲Λ 電解液係為以磷酸為主成份之水溶液:迻裝置，其 5·如申請專利範圍第1項所述之金屬扯陽極係為一金屬板，而陰極係為二或=疋裝置，其金屬離子從陽極分解出來而電鍍至险:鍍之結構；極的反應副產品因為薄膜的阻隔而無法；J表面，並且陽 6·如申請專利範圍第5項所述之今1 h進入陰極。〈至屬精整襄置，其 1237068 -.案號叫 2241^^ _ 六、申請專利範圍〜-- 中，另包括一離子收集部，立町收集於電解槽一側之電解液中的金屬離子或反應副產口。 7·如申請專利範圍第1項所述之金屬精整裝置，其中，該離子收集部係連接至與電解槽相連之第一儲槽，其供應並回收陽極室的電解液，而該陽極室經由薄膜而與陰極室相分離。 8 ·如申請專利範圍第6項所述之金屬精整裝置，其中，該離子收集部係連接易與電解槽相連之第一儲槽，其供應並回收陽極室的電解液，而該陽極室經由薄膜而與陰極室相分離。 9 ·如申請專利範圍第7項所述之金屬精整裝置，其中，一第二儲槽·係連接至電解槽另側，其供應並回收陰極至的電解液，而該陰極室經由薄膜而與陽極室相分離。 1 〇 .#如申請專利範圍第8項所述之金屬精整裝置，其 A的雪ί、儲才曰:系連接至電解槽另側，其供應並回收陰極至Μ〃二液，而該陰極室經由薄膜而與陽極室相分離。 • 一種金屬精整方法，主要包括下列步驟：入電解ϋ準U t陽極和陰極之電解，曹’兩者皆沒入來選擇性地讓特定雜；％ u往旳溥膜，其具有無數細孔 Η徂ί 從—電極滲透至另一電極；雷；^ ^ π I、°電流至電解槽中來產生一電極反庳，而；r 電極分解出來的特定離子：而攸- Ο藉由—離子收集 =二=内；以及特定離子，該離子收隹 =木於電極反應中所產生的木口卩係連接至電解槽的一側以維持電1 · A metal finishing device, mainly comprising: · an electrolytic cell; a valley electrolyte placed in the electrolytic cell; an anode submerged in the electrolyte; a cathode submerged in the electrolyte; and an anode and a cathode provided The thin film between them allows the electrode to decompose into the electrolyte ^^ in the reaction of the electrode selectively and permeate one electrode to the other electrode. ; And the metal ion or reaction by-product from the special ion 2_ As described in the metal patent application No. 丨, the anode system is a polished structure, and the cathode system is another, and the metal ion is provided by The electrolytic polishing process is flattened from the anode to the surface, and metal ions prevent the formation of metal deposits on the surface of the cathode by the anode and cathode of the thin film. " 、, France penetrates into China, China and China. 3. The metal anode according to item 2 of the patent application scope is a lead frame. "H complete device, 4. The metal electrolyte described in item 2 of the scope of the patent application Λ electrolyte solution is an aqueous solution containing phosphoric acid as the main component: mobile device, and 5. The metal as described in item 1 of the scope of the patent application The anode system is a metal plate, while the cathode system is a two-or-thorium device. The metal ions are decomposed from the anode and electroplated to the danger: the structure of the plating; the reaction byproducts of the electrode cannot be blocked by the film; 6. Enter the cathode 1 h as described in item 5 of the scope of patent application. <It is a finishing facility, its case number is 1237068-. The case number is 2241 ^^ _ 6. The scope of patent application ~-In addition, it also includes an ion collection part, Tachimachi collects metal ions in the electrolyte of the electrolytic cell side Or respond to by-products. 7. The metal finishing device according to item 1 of the scope of the patent application, wherein the ion collection unit is connected to the first storage tank connected to the electrolytic cell, which supplies and recovers the electrolyte of the anode chamber, and the anode chamber It is separated from the cathode chamber through a thin film. 8. The metal finishing device according to item 6 of the scope of the patent application, wherein the ion collection unit is a first storage tank that is easily connected to the electrolytic cell, and supplies and recovers the electrolyte of the anode chamber, and the anode chamber It is separated from the cathode chamber through a thin film. 9. The metal finishing device according to item 7 in the scope of the patent application, wherein a second storage tank is connected to the other side of the electrolytic tank, which supplies and recovers the electrolyte to the cathode, and the cathode chamber is connected via a thin film. Separated from the anode compartment. 1 〇. # The metal finishing device described in item 8 of the scope of the patent application, whose snow A and storage are connected to the other side of the electrolytic cell, which supplies and recovers the cathode to the second liquid M〃, and the The cathode compartment is separated from the anode compartment via a thin film. • A metal finishing method, which mainly includes the following steps: The electrolysis of quasi-U t anode and cathode electrolysis, Cao's both submerged to selectively allow specific impurities;% u to the membrane, which has countless fine孔 Η 徂 ί penetrates from the electrode to another electrode; thunder; ^ ^ π I, ° current into the electrolytic cell to generate an electrode reaction, and; r specific ion decomposed by the electrode: and You-〇 by- Ion collection = two = internal; and specific ions, the ions are collected = wood mouth generated in the electrode reaction is connected to one side of the electrolytic cell to maintain electricity

1237068 _案號 91122241 六、申請專利範圍解液之固定濃度。曰修正1237068 _ Case No. 91122241 6. Scope of patent application Fixed concentration of solution. Correction

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