TWI236084B - Method for manufacturing an electrostatic chuck - Google Patents

Abstract

A method for manufacturing an electrostatic chuck is disclosed. A first dielectric layer is formed on an electrostatic clamping surface of a chuck body. Low impedance ions are implanted into the first dielectric layer by means of metal vapor vacuum arc (MEVVA) technique, so that the first dielectric layer is uniformly reduced to have a resistivity between 10<6> to 10<13> Omega-cm for generating a Johnsen-Rahbek effect while clamping a workpiece. Then a second dielectric layer is coated on the first dielectric layer. The second dielectric layer has a higher resistance than that of the first dielectric layer and has a thickness between 50 to 500 mum to prevent damage of a clamped workpiece because of electrical leakage from the first dielectric layer.

Description

12360841236084

五、發明說明（1) 【韻：明所屬之技術領域】 本發明係有關於一種靜電吸盤之製造方法，特別係有 關於一種具有複合式介電層之靜電吸盤之製造方法。 【先前技術】V. Description of the invention (1) [Yun: Ming's technical field] The present invention relates to a method for manufacturing an electrostatic chuck, and particularly to a method for manufacturing an electrostatic chuck with a composite dielectric layer. [Prior art]

習知靜電吸盤〔electrostatic chuck〕係用以夾钳 固疋一工作件，如半導體晶圓或面板等工作件，習知靜電 吸盤之盤本體係主要包含有金屬與陶瓷兩類，當以陶瓷為 盤本體時尚需要貼附形成電極薄膜，而以金屬為盤本體具 有較佳之成型加工性及具有成本低廉之優點，習知靜電吸 盤之夾钳力係區分為庫倫靜電吸力與運用J〇hnsen-Rahbek 效應之夾持力’其中運用j〇hnsen — Rahbek效應之夾持力係 具有夾钳力強〔large ciamping forCe〕及離夾時間短 〔short de-chucking time〕之優點。The conventional electrostatic chuck is used to clamp a work piece, such as a semiconductor wafer or a panel. The system of the conventional electrostatic chuck mainly includes metal and ceramic. When ceramic is used, The disk body needs to be attached to form an electrode film. The metal disk body has better molding processability and low cost. The clamping force of the conventional electrostatic chuck is divided into Coulomb electrostatic suction and the use of Johnsen-Rahbek. The clamping force of the effect, among which the clamping force using the johnsen-Rahbek effect, has the advantages of strong clamping force (large ciamping for Ce) and short de-chucking time.

美國專利公告第5, 463, 526號係揭示有一種運用， Johnsen-Rahbek效應之複合式靜電吸盤，其盤本體上形成 有一導電層，該導電層上形成有一較厚之半導體介電層， 其電阻值控制在於較低範圍，用以生成johnsen-Rahbek效 應之夾持力，另在該半導體介電層上形成有一較薄之絕緣 層〔insulating layer〕，由於該半導體介電層仍局部地 直接接觸一工作件，當對該靜電吸盤施以高電壓而夾鉗一 工作件時，容易經由該半導體介電層滲漏電流〔leakage of electricity〕至工作件，如半導體晶圓，而損傷晶圓 内晶片。 原申請人於我國專利公告第502 368號「靜電吸盤及其U.S. Patent Publication No. 5,463,526 discloses a composite electrostatic chuck using the Johnsen-Rahbek effect. A conductive layer is formed on the disk body, and a thick semiconductor dielectric layer is formed on the conductive layer. The resistance value is controlled in a lower range to generate the clamping force of the johnsen-Rahbek effect, and a thin insulating layer is formed on the semiconductor dielectric layer, because the semiconductor dielectric layer is still partially directly When contacting a work piece, when a high voltage is applied to the electrostatic chuck to clamp a work piece, it is easy to leak the current through the semiconductor dielectric layer to the work piece, such as a semiconductor wafer, and damage the wafer. Within the chip. The original applicant in China Patent Bulletin No. 502 368

第6頁 1236084 7· ‘ — -----------— •在、發明說明（2) 製造方法」揭示一種具有複合式介電層之靜電吸盤，其係 以陽極處理方法均勻地在電極板上形成一較薄之第一介電 層，使得第一介電層包含有該電極板之元素，再以電漿喷 燁方式形成一較厚之第二介電層於第一介電層，但尚未能 揭露出如何製造具有Johnsen-Rahbek效應之複合式靜電吸 盤0 【發明内容】 本發明之主要目的係在於提供一種靜電吸盤之製造方 法’利用金屬蒸汽真空弧（metal vapour vacuum arc, MEVVA )離子植入技術將低阻抗離子植入該第一介電層， 以改變該第一介電層之電容，使得該第一介電層之電阻值 能均勻且可控制地降低至1 〇6〜1 〇l3 Q — cm，以供在靜電吸附 時產生Johnsen-Rahbek效應。 本發明之次一目的係在於提供一種靜電吸盤之製造方 法’利用一高電阻〔&gt;1〇ΐ4 Ω -cm〕之第二介電層形成篆蓋 於較低電阻〔1〇6〜1(Ρ Ω-cm〕之第一介電層，使得在靜電 吸附時第一介電層產生johnsen-Rahbek效應不會漏電損傷 工作件。/ 本發明之再一目的係在於提供一種靜電吸盤，利用一 兩電阻〔&gt;1 Ο14 Ω - cm〕之第二介電層係覆蓋於較低電阻 嫌1 〔1〇6〜1013 Ω-cm〕之第一介電層，使得在靜電吸附時第一 介電層所產生Johnsen-Rahbek效應不會漏電損傷工作件。 依本發明之靜電吸盤之製造方法，首先提供一盤本 體’該盤本體係具有一靜電吸附面及一對應之背面，較佳Page 61236084 7 · — — -----------— • Invention description (2) Manufacturing method "discloses an electrostatic chuck with a composite dielectric layer, which is uniformly treated by an anodic treatment method A thin first dielectric layer is formed on the electrode plate so that the first dielectric layer contains the elements of the electrode plate, and then a thicker second dielectric layer is formed on the first layer by plasma spraying. Dielectric layer, but it has not been able to reveal how to make a composite electrostatic chuck with Johnsen-Rahbek effect. [Summary] The main purpose of the present invention is to provide a method for manufacturing an electrostatic chuck 'using a metal vapour arc (metal vapour vacuum arc (MEVVA) ion implantation technology implants low impedance ions into the first dielectric layer to change the capacitance of the first dielectric layer, so that the resistance value of the first dielectric layer can be uniformly and controllably reduced To 10-6 ~ 103 Q-cm for the Johnsen-Rahbek effect during electrostatic adsorption. A second object of the present invention is to provide a method for manufacturing an electrostatic chuck, which utilizes a second dielectric layer with a high resistance [&gt; 10 Ω-cm] to form a cap with a low resistance [106 ~ 1 ( (P Ω-cm) of the first dielectric layer, so that the johnsen-Rahbek effect of the first dielectric layer will not cause damage to the work piece when the electrostatic adsorption occurs./ Another object of the present invention is to provide an electrostatic chuck, which uses a The second dielectric layer with two resistances [&gt; 1 〇14 Ω-cm] covers the first dielectric layer with lower resistance 1 [106 ~ 1013 Ω-cm], so that the first dielectric layer According to the manufacturing method of the electrostatic chuck of the present invention, the Johnsen-Rahbek effect generated by the electric layer will not damage the work piece. First, a disk body is provided. The disk system has an electrostatic adsorption surface and a corresponding back surface.

第7頁 1236084 五、發明說明（3)Page 7 1236084 V. Description of the invention (3)

地’該背面係形成有一保護氧化膜；之後，形成一第一介 電層於該盤本體之靜電吸附面，該第一介電層之厚度係介 於10〜2 00 //m之間；之後，利用金屬蒸汽真空弧（metal vapour vacuum arc，MEVVA)離子植入技術將低阻抗離子 植入該第一介電層，以改變該第一介電層之電容，使得該 第一介電層之電阻值降低至106〜1〇13 Q-cni，以供在靜電吸 附時產生Johnsen-Rahbek效應，該些低阻抗離子係選自於 Ag、Cu、Fe、A1、Zn、Cr、Ti 广（：等離子；形成一第二介 電層於該第一介電層上並覆蓋該第一介電層，該第二介電 層係具有大於第一介電層之電阻值〔&gt;1〇14 Ω—cm〕，並以 電漿喷焊或化學氣相沉積技術全面覆蓋於該第一介電層， 第一介電層之厚度係介於50〜500 之間，當以該靜電吸 附面靜電吸附一工作件時，由第一介電層所產生 Johnsen-Rahbek效應而累積於第一介電層3〇與第二介電層 40間界面的電荷無法通過第二介電層，達到防止對工作件 之漏電而減少損傷工作件。 【實施方式】 參閱所附圖式，本發明將列舉以下之實施例說明。Ground 'The back surface is formed with a protective oxide film; after that, a first dielectric layer is formed on the electrostatic adsorption surface of the disc body, and the thickness of the first dielectric layer is between 10 and 2 00 // m; After that, low-impedance ions are implanted into the first dielectric layer using metal vapour vacuum arc (MEVVA) ion implantation technology to change the capacitance of the first dielectric layer so that the first dielectric layer The resistance value is reduced to 106 ~ 1013 Q-cni to generate the Johnsen-Rahbek effect during electrostatic adsorption. These low-resistance ions are selected from Ag, Cu, Fe, A1, Zn, Cr, and Ti. : Plasma; forming a second dielectric layer on the first dielectric layer and covering the first dielectric layer, the second dielectric layer having a resistance value greater than that of the first dielectric layer [&gt; 1104 Ω—cm], and the first dielectric layer is fully covered by plasma spray welding or chemical vapor deposition technology. The thickness of the first dielectric layer is between 50 and 500. When a work piece is attracted, the Johnsen-Rahbek effect generated by the first dielectric layer is accumulated in the first dielectric layer 30 and Two interface between the dielectric layer 40 is not charged by the second dielectric layer, to prevent leakage and reduce damage to the working member of the working member. [Embodiment See the accompanying drawings, the present invention will include the following examples.

請參閱第1圖，依本發明之一具體實施例所例舉之靜 電吸盤之製造方法係主要包含冑「提供—盤本體」i i、 「形成第一介電層於該盤本體」12、「利用離子植入技術 將低阻抗離子植入該第一介電層，以改變該第一介電層之 電容」13及「形成第二介電層於該第一 4 驟。Please refer to FIG. 1. The manufacturing method of the electrostatic chuck according to one embodiment of the present invention mainly includes “providing—disk body” ii, “forming a first dielectric layer on the disk body” 12, “ Low-impedance ions are implanted into the first dielectric layer using ion implantation technology to change the capacitance of the first dielectric layer "13 and" form a second dielectric layer in the first four steps.

1236084 五、發明說明（4) 於「提供一盤本體」11步驟中，請參閱第2A，撋，所提 供之盤本體20係由紹、銘合金或其它金屬製成，其係具有 一靜電吸附面2 1及一對應之背面2 2，該靜電吸附面2 1係用 以靜電吸附一工作件〔workpiece〕，如半導艘晶圓、石夕 板或玻璃基板’該盤本體20係具有複數個貫通該靜電吸附 面21與該背面22之通孔23，以供頂托針〔lift pin〕通過 而托起工作件〔圖未繪出〕，較佳地，在「形成第一介電 層於該盤本體」12步驟之前，對該盤本體2〇施以陽極處 理’以在該盤本體2 0之背面2 2形成保護性氧化膜2 4 ,如氧 化紹薄膜〔aluminum oxide film〕，其厚度約在1〇〜2〇〇 /zm，以保護該盤本體20之背面22，防止漏電，並且可鄰 接該第一介電層30，以增強該第一介電層於該盤本體2〇 之結合。該盤本體20係作為靜電吸盤之電極及主體結構， 於本實施例中，該盤本體20係為三極電極〔tri_p〇Ur electrode〕，依設計不同，亦可為單極電極 〔mono-polar electrode〕或雙極電極〔bi—polar electrode 〕 °1236084 V. Description of the invention (4) In step 11 of "Providing a plate body", please refer to Section 2A, 撋. The provided plate body 20 is made of Shao, Ming alloy or other metal, which has an electrostatic adsorption Surface 21 and a corresponding back surface 22. The electrostatic adsorption surface 21 is used to electrostatically adsorb a workpiece, such as a semi-conductor wafer, stone plate or glass substrate. The disk body 20 has a plurality of A through hole 23 penetrating the electrostatic adsorption surface 21 and the back surface 22 is provided for the lift pin to pass through and lift the work piece (not shown). Preferably, a "first dielectric layer is formed" Prior to the 12 steps of the disk body, the disk body 20 is anodized to form a protective oxide film 2 4 on the back surface 22 of the disk body 20, such as an aluminum oxide film. The thickness is about 10˜200 / zm to protect the back surface 22 of the disk body 20 from leakage, and may be adjacent to the first dielectric layer 30 to strengthen the first dielectric layer on the disk body 2. Combination. The disk body 20 is used as the electrode and main structure of the electrostatic chuck. In this embodiment, the disk body 20 is a tri-polar electrode [tri_p〇Ur electrode]. Depending on the design, it may also be a mono-polar electrode [mono-polar electrode] or bipolar electrode [bi-polar electrode] °

於「形成第一介電層於該盤本體」步驟丨2中，請參閱 第2B圖，運用電漿喷焊〔piasma spraying〕.或陽極處理 技術在該盤本體20之靜電吸附面21形成一緻密而高電阻之 第一介電層30，如氧化鋁，該第一介電層3〇之厚度係介於 10〜200 μπι之間並覆蓋於該盤本體2〇之靜電吸附面21。 「利用離子植入技術將低阻抗離子植入該第一介電 層，以改變該第一介電層之電容」步驟13，首先請參閱第In the step of "forming the first dielectric layer on the disk body", please refer to FIG. 2B, and use plasma spraying (piasma spraying) or anodizing technology to form a static adsorption surface 21 on the disk body 20. The dense and high-resistance first dielectric layer 30, such as alumina, has a thickness of 10 to 200 μm and covers the electrostatic adsorption surface 21 of the disk body 20. "Implant low-impedance ions into the first dielectric layer using ion implantation technology to change the capacitance of the first dielectric layer." Step 13

第9頁 1236084 五、發明說明（5) —--— 3圖，該已形成有第一介電層30之盤本體2〇係置放於一離 子植入設備60内，該第一介電層3〇係朝向該離子植入設 60之處理面，利用金屬蒸汽真空弧（metal vap〇Ur 胥 vacuum arc，MEVVA)離子植入技術將低阻抗元素， 〔銀〕、Cu〔銅〕、Fe〔鐵〕、M〔紹〕、Zn〔鋅〕 〔鉻〕、Ti〔鈦〕、（：〔碳〕等原子或原子團，在陽極 61、陰極62、磁鐵63及觸發電極64等離子源之真空弧發電 作用下，於真空處理腔内生成低阻抗離子31，並加速為離 子束，利用引出電極65、抑制栅電極66與接地電極67約束 並控制該包含有該些低阻抗離子31之離子束，使其衝擊而 植入該第一介電層30内，藉以改變該第一介電層3〇之電 容，由於該些低阻抗離子31〔於植入後亦可視為低阻抗元 〕之植入操作，使得該第一介電層3〇滲有適當之低阻 抗兀素3 2/〔請參閱第2C圖〕，該第一介電層3〇在離子植入 步驟1 3之後其電阻值係能可控制地降低至丨〇6〜丨瓜， 以供在靜電吸附一工作件時產生J〇hnsen —Rahbek效應，較 佳地，該些低阻抗離子31之植入量約為該第一介電層3〇之 0· ：1〜10wt%〔重量百分比〕。 於「形成第二介電層於該第一介電層」14中，請參閱 第2D岡，利用電聚噴焊或化學氣相沉積〔Chemicai Vap〇r❿ Deposi tion，CVD〕技術在該第一介電層3〇之顯露表面形 成一第二介電層40，以全面覆蓋該第一介電層30，該第二 介電層40之電阻值〔大於1〇“ Q_cm〕係大於該第一介電 層30之電阻值，該第二介電層4〇係選自於…以〔氧化Page 91236084 V. Description of the invention (5) — 3 — The disk body 20 having the first dielectric layer 30 formed therein is placed in an ion implantation device 60, and the first dielectric The layer 30 is oriented toward the treatment surface of the ion implantation device 60. The metal ion implantation technology uses metal vapour vacuum arc (MEVVA) ion implantation technology to reduce the low-resistance elements, [silver], Cu [copper], Fe [Iron], M [Shao], Zn [Zinc] [Chromium], Ti [Titanium], (: [Carbon], etc. atoms or groups of atoms, vacuum arcs at the ion source such as anode 61, cathode 62, magnet 63 and trigger electrode 64 Under the action of power generation, low-impedance ions 31 are generated in the vacuum processing chamber and accelerated into an ion beam. The extraction electrode 65, the suppression gate electrode 66, and the ground electrode 67 are used to constrain and control the ion beam containing the low-impedance ions 31. It is impacted and implanted in the first dielectric layer 30 to change the capacitance of the first dielectric layer 30. Due to the implantation of the low-impedance ions 31 (which can also be regarded as low-resistance elements after implantation) Operation such that the first dielectric layer 30 is infiltrated with an appropriate low-impedance element 3 2 / [see also FIG. 2C], the resistance value of the first dielectric layer 30 after the ion implantation step 13 can be controllably reduced to 〇〇6 ～ 丨 瓜 for generation of J when a work piece is electrostatically adsorbed. hnsen-Rahbek effect, preferably, the implantation amount of the low-resistance ions 31 is about 0 ·: 1 ~ 10wt% [weight percentage] of the first dielectric layer. In the "first dielectric layer" 14, please refer to the 2D Gang, and use the electropolymeric spray welding or chemical vapor deposition (Chemicai Vapor❿ Deposition, CVD) technology on the exposed surface of the first dielectric layer 30. Forming a second dielectric layer 40 to completely cover the first dielectric layer 30, and the resistance value [greater than 10 "Q_cm] of the second dielectric layer 40 is greater than the resistance value of the first dielectric layer 30, The second dielectric layer 40 is selected from

第10頁 1236084 五、發明說明（6) 鋁〕、A1N〔氮化鋁〕、BN〔氮化硼〕、Si3N4〔氮化石久〕 及BeO〔氧化鈹〕等高電阻材料，較佳地，該第二介電層 40之厚度係50〜5 0 0 //m。 請參閱第4及5圖，依上述製造方法製得之靜電吸盤係 可連接一電源供應器50，對該盤本體20提供一高電壓，由 於該第一介電層30之電阻值降低至1〇6〜i〇i3 Q-Cin，能誘生Page 10 1236084 5. Description of the invention (6) Aluminum], A1N [Aluminum Nitride], BN [Boron Nitride], Si3N4 [Stone Nitride] and BeO [Beryllium Oxide] and other high resistance materials, preferably, the The thickness of the second dielectric layer 40 is 50˜50 0 // m. Please refer to FIGS. 4 and 5. The electrostatic chuck prepared according to the above manufacturing method can be connected to a power supply 50 to provide a high voltage to the disk body 20. Since the resistance value of the first dielectric layer 30 is reduced to 1 〇6 ～ i〇i3 Q-Cin, can induce

出擴增之電容’即在該第一介電層30快速生成大量移動之 正負電荷’產生了 John sen-Rahbek效應，增強對在靜電吸 附面21上之工作件70〔如半導體晶圓〕之夾鉗力 〔clamping force〕，同時該工作件7〇脫離該靜電吸盤之 離夾時間〔de-chucking time〕可控制在兩秒之内。更重 要的是’利用該高電阻之第二介電層4〇覆蓋該第一介電層 ，使得累積於第一介電層3〇與第二介電層4〇間界面的電 荷無法通過第二介電層4〇 ,達到防止對工作件7〇之漏電而 減少損傷該工作件7 〇，如半導體晶圓内晶片。 此外，本發明之靜電吸盤之製造方法並不局限金屬材 質之盤本體2 0 ’含有電極板之非導電材質〔如陶瓷〕製成 之盤本體亦可運用於本發明之製造方法。The amplified capacitance 'that is, a large number of positive and negative charges that move rapidly in the first dielectric layer 30' generates the John sen-Rahbek effect, which enhances the effect on the work piece 70 (such as a semiconductor wafer) on the electrostatic adsorption surface 21 The clamping force and the de-chucking time of the work piece 70 from the electrostatic chuck can be controlled within two seconds. It is more important to 'cover the first dielectric layer with the high-resistance second dielectric layer 40, so that the charges accumulated at the interface between the first dielectric layer 30 and the second dielectric layer 40 cannot pass through the first The second dielectric layer 40 can prevent leakage of the work piece 70 and reduce damage to the work piece 70, such as a wafer in a semiconductor wafer. In addition, the manufacturing method of the electrostatic chuck of the present invention is not limited to the disc body 20 made of a metallic material, and the disc body made of a non-conductive material (such as ceramic) containing an electrode plate can also be used in the manufacturing method of the present invention.

本發明之保護範圍當視後附之申請專利範圍所界定者 ，任何热知此項技藝者，在不脫離本發明之精神和範 所作之任何變化與修改，均屬於本發明之保護範圍。The scope of protection of the present invention is defined by the scope of the attached patent application. Any changes and modifications made by those skilled in the art without departing from the spirit and scope of the present invention belong to the scope of protection of the present invention.

1236084 圖式簡單說明 第 1 圖 第2A至2D圖 第 3 圖 第 4 圖 第 5 圖 依據本發明之靜電吸盤之製造流程圈； 依^本發明之靜電吸盤之製造方法，所提供 之盤本體在流程步驟中之截面示意圖；’、 發明之靜電吸盤之製造方·，該盤本 體在離子植入設備中之截面示意圖； 依據本發明之靜電吸盤之製造方法，該靜電 及盤及附有一晶圓之截面示意圖；及 依據本發明之靜電吸盤之製造方法，該靜電 及盤吸附有一晶圓之部份截面示意圖。1236084 Brief description of the drawings 1st figure 2A to 2D figure 3 figure 4 figure 5 figure According to the manufacturing process of the electrostatic chuck according to the present invention; according to the manufacturing method of the electrostatic chuck according to the present invention, the disc body provided is Cross-sectional schematic diagram in the process steps; ', the manufacturer of the invention's electrostatic chuck, the cross-sectional schematic diagram of the disk body in the ion implantation device; according to the manufacturing method of the electrostatic chuck according to the present invention, the electrostatic and the disk and a wafer attached thereto A schematic cross-sectional view; and a manufacturing method of an electrostatic chuck according to the present invention, the electrostatic and the disk adsorbing a partial cross-sectional view of a wafer.

元件符號簡單說明： 11 提供一盤本體 12 形成第一介電層於該盤本體 13 利用離子植入 技術將低阻抗離子植入該第一介電層， 以改變該第一 介電層之電容 14 形成第二介電層於該第一介電層 20 盤本體 21 靜電吸附面 22 背面 23 通孔 24 氧化膜 30 第一介電層 31 低阻抗離子 32 元素 40 第二介電層 50 電源供應器 60 離子植入設備 61 陽極 62 陰極 63 磁鐵 64 觸發電極 65 引出電極 66 抑制栅電極 67 接地電極 70 工作件Brief description of component symbols: 11 Provide a disk body 12 Form a first dielectric layer on the disk body 13 Use ion implantation technology to implant low impedance ions into the first dielectric layer to change the capacitance of the first dielectric layer 14 Form a second dielectric layer on the first dielectric layer 20 Disk body 21 Electrostatic adsorption surface 22 Back surface 23 Through hole 24 Oxide film 30 First dielectric layer 31 Low impedance ions 32 Element 40 Second dielectric layer 50 Power supply 60 Ion implantation equipment 61 Anode 62 Cathode 63 Magnet 64 Trigger electrode 65 Lead-out electrode 66 Suppressing grid electrode 67 Ground electrode 70 Work piece

Claims (1)

1236084 案號 92106477 曰 六、申請專利範圍 7、 如申請專利範圍第1項所述之靜電吸盤之製造方法， 其中該第二介電層係選自於Al2〇3、AIN、BN、Si3N4或BeO 之高電阻材料。 8、 如申請專利範圍第1項所述之靜電吸盤之製造方法， 其中該第一介電層之形成方法係為電漿喷焊〔plasma sprayed coating〕或陽極處理。 9、 一種靜電吸盤，包含： 一盤本體，其係具有一靜電吸附面及一對應之背面； 一第一介電層，其係形成於該盤本體之靜電吸附面， 該第一介電層係包含有由離子植入方式植入之低阻抗離 子，措以改變該第一介電層之電容 之電阻值降低至1〇6〜l〇13 ^ Johnsen-Rahbek 效應;及1236084 Case No. 92106477 6th, patent application scope 7, the manufacturing method of the electrostatic chuck described in item 1 of the patent application scope, wherein the second dielectric layer is selected from the group consisting of Al203, AIN, BN, Si3N4 or BeO High resistance material. 8. The method for manufacturing an electrostatic chuck as described in item 1 of the scope of the patent application, wherein the method for forming the first dielectric layer is plasma sprayed coating or anodizing. 9. An electrostatic chuck comprising: a disc body having an electrostatic adsorption surface and a corresponding back surface; a first dielectric layer formed on the electrostatic adsorption surface of the disc body, the first dielectric layer Contains low-impedance ions implanted by ion implantation to reduce the resistance value of the capacitance of the first dielectric layer to 106 ~ 1013 ^ Johnsen-Rahbek effect; and i，其中該些低 vapour vacuum 13、如 、如申請專利範圍第9 項所述之靜 容，使得該第一介電層 以供在靜電吸附時產生 且該第二介電層 吸盤，其中該第二 吸盤，其中所植入 Al、Zn、Cr、 電吸盤 1236084 案號92106477_年月曰 修正_ 一 六、申請專利範圍 . 介電層之厚度係介於50〜500 //m。 1 4、如申請專利範圍第9項所述之靜電吸盤，其中該盤本 體之背面係形成有一保護性氧化膜。 1 5、如申請專利範圍第9項所述之靜電吸盤，其中該第一 介電層係為由電漿喷焊或陽極處理所形成之氧化銘。 1 6、如申請專利範圍第9項所述之靜電吸盤，其中該第二 介電層係選自於A 12 03、AIN、BN、Si3N4或BeO之高電阻 材料。i, wherein the low vapour vacuum 13, such as the static capacity described in item 9 of the scope of patent application, makes the first dielectric layer for electrostatic adsorption and the second dielectric layer chuck, wherein The second chuck, in which Al, Zn, Cr, and electric chucks are implanted 1236084 Case No. 92106477_Year Month Amendment_16. Scope of patent application. The thickness of the dielectric layer is between 50 ~ 500 // m. 14. The electrostatic chuck as described in item 9 of the scope of patent application, wherein a protective oxide film is formed on the back of the disc body. 15. The electrostatic chuck according to item 9 in the scope of the patent application, wherein the first dielectric layer is an oxide inscription formed by plasma spray welding or anodizing. 16. The electrostatic chuck according to item 9 in the scope of the patent application, wherein the second dielectric layer is a high-resistance material selected from A 12 03, AIN, BN, Si3N4, or BeO. 第15頁Page 15