TWI220414B - Fluid injector and method of manufacturing the same - Google Patents
Fluid injector and method of manufacturing the same Download PDFInfo
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- TWI220414B TWI220414B TW92130899A TW92130899A TWI220414B TW I220414 B TWI220414 B TW I220414B TW 92130899 A TW92130899 A TW 92130899A TW 92130899 A TW92130899 A TW 92130899A TW I220414 B TWI220414 B TW I220414B
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- Prior art keywords
- fluid
- hole
- layer
- ejection device
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- 239000012530 fluid Substances 0.000 title claims abstract description 125
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- -1 polysuifones Polymers 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 239000004962 Polyamide-imide Substances 0.000 claims description 6
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- 229920000412 polyarylene Polymers 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 229920000292 Polyquinoline Polymers 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 150000002170 ethers Chemical class 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 229920003986 novolac Polymers 0.000 claims description 4
- 229920002492 poly(sulfone) Polymers 0.000 claims description 4
- 229920002480 polybenzimidazole Polymers 0.000 claims description 4
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims description 3
- 229920002577 polybenzoxazole Polymers 0.000 claims description 3
- 229920001601 polyetherimide Polymers 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 229920002312 polyamide-imide Polymers 0.000 claims 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims 1
- 150000002576 ketones Chemical class 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 150000002790 naphthalenes Chemical class 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920006393 polyether sulfone Polymers 0.000 claims 1
- 229920000417 polynaphthalene Polymers 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 230000002209 hydrophobic effect Effects 0.000 abstract description 27
- 238000002161 passivation Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 description 30
- 239000007921 spray Substances 0.000 description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- RVYBHNVKBNBMLE-UHFFFAOYSA-N 2-methylprop-2-enoic acid;propane-1,2-diol Chemical compound CC(O)CO.CC(=C)C(O)=O RVYBHNVKBNBMLE-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 1
- 229910004490 TaAl Inorganic materials 0.000 description 1
- ATMLPEJAVWINOF-UHFFFAOYSA-N acrylic acid acrylic acid Chemical compound OC(=O)C=C.OC(=O)C=C ATMLPEJAVWINOF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/1437—Back shooter
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Fuel-Injection Apparatus (AREA)
Abstract
Description
1220414 五、發明說明（1) 發明所屬之技術領域： 本發明係有關於一種流體喷射裝置及其製造方法，特 別係有關於一種可提高使用效率及延長壽命的流體喷射裝 置及其製造方法。 先前技術： 目前流體喷射裝置大多運用於喷墨頭、燃料喷射器等 元件上，其中喷墨頭更是大量的使用熱趨氣泡式設計。 第1圖顯示一種習知美國專利號碼6, 1 0 2, 5 3 0的單石化 的流體喷射裝置1，其以一矽基底1 0作為本體，且在矽基 底1 0上形成一結構層1 2，而在矽基底1 0和結構層1 2之間形 成一流體腔1 4，用以容納流體26 ;而在結構層1 2上設有一 第一加熱器2 0、以及一第二加熱器2 2，第一加熱器2 0用以 在流體腔1 4内產生一第一氣泡3 0，第二加熱器2 2用以在流 體腔1 4内產生一第二氣泡3 2，以將流體腔1 4内之流體2 6射 出。 由於單石化的流體噴射裝置1具有虛擬氣閥（v i r t ua 1 va 1 ve )的設計，並擁有高排列密度、低交互干擾、低熱 量損失的特性，且無須另外利用組裝方式接合喷孔片，因 此可以降低生產成本。 然而，在習知的單石化的流體喷射裝置1中，結構層 1 2主要由低應力的氧化矽所組成，在製程上，其厚度有所 限制，因此對於整體結構的壽命有其影響，且由於受氣泡 擠壓而飛離裝置的液滴因為結構層1 2厚度不足，而會有方1220414 V. Description of the invention (1) Technical field to which the invention belongs: The present invention relates to a fluid ejection device and a method for manufacturing the same, and more particularly, to a fluid ejection device and a method for manufacturing the same which can improve the use efficiency and extend the life. Prior technology: At present, most fluid injection devices are used in inkjet heads, fuel injectors, and other components. Among them, inkjet heads use a large number of thermal bubble designs. FIG. 1 shows a conventional petrochemical fluid ejection device 1 of US Pat. No. 6, 102, 5 3 0, which uses a silicon substrate 10 as a body and forms a structural layer 1 on the silicon substrate 10 2, and a fluid cavity 14 is formed between the silicon substrate 10 and the structural layer 12 to receive the fluid 26; and a first heater 20 and a second heater 2 are provided on the structural layer 12 2. The first heater 20 is used to generate a first bubble 30 in the fluid chamber 14 and the second heater 22 is used to generate a second bubble 32 in the fluid chamber 14 to move the fluid chamber The fluid in 1 4 2 6 is ejected. Because the petrochemical fluid ejection device 1 has the design of a virtual air valve (virt ua 1 va 1 ve), and has the characteristics of high arrangement density, low interaction interference, and low heat loss, and it is not necessary to use another assembly method to join the nozzle holes, Therefore, production costs can be reduced. However, in the conventional monolithic fluid ejection device 1, the structural layer 12 is mainly composed of low-stress silicon oxide. In the manufacturing process, its thickness is limited, so it has an impact on the life of the overall structure, and The droplets flying away from the device due to being squeezed by the air bubbles will be effective because the thickness of the structural layer 12 is insufficient.
0535-10443W( N1); A03 302; J AMNGWO. p t d 第5頁 12204140535-10443W (N1); A03 302; J AMNGWO. P t d p. 5 1220414
五、發明說明（2) 向無法導正的缺點；其次，當微液滴喷射離開噴孔之後， 流體經由歧管回填I流體腔，流體經由噴孔擴散至喷射裝 置表面，造成溢墨現象，間接影響後續喷墨液滴的尺寸。 發明内容： 有鑑於此，本發，的目的在於提供一種流體噴射裝置 及其製造方法，矸提南使用效率，且可延長壽命。 為達成上述目的本务明係提供一種流體喷射裝置， 其包括一基材、/第一通孔、一流體致動裝置、一保護 層、以及一具疏水性之厚膜層；基材具有一流體腔以及一 表面，第一通孔設置於表面且與流體腔相連通；流體致動 裝置於表面上並鄰近第一通孔，且位於基材之流體腔外； 保護層設置於表面上’具疏水性之厚膜層以位於流俨舻外 的方式設置於保護詹上，且具有-第二通孔，夕 孔與第一通孔連通。 、 ^ 在本發明之一較佳實施例中，第二通孔與第一通孔連 通的一端的直徑比未與第一通孔連通的另一端的直徑大。 流體致動裝置可為電熱式氣泡產生器，亦可為壓 薄，致動器。較佳者為由一電阻層所構成之電熱式氣泡^ 應了解的是具疏水性之圖案化厚膜層與純水之接 ^於90度。具疏水性之厚膜層之材質可為較佳者為感光性 咼为子材貝，例如聚亞酿胺（ρ 〇 1 y ^ ^ d e )、環氧樹脂 (epoxy resin)、甲基丙稀酸環氧丙脂（giycidyiV. Explanation of the invention (2) The shortcomings that cannot be corrected; secondly, after the micro-droplets are ejected from the nozzle hole, the fluid backfills the fluid chamber I through the manifold, and the fluid diffuses to the surface of the ejection device through the nozzle hole, causing an ink overflow phenomenon, Indirectly affects the size of subsequent inkjet droplets. SUMMARY OF THE INVENTION In view of this, the purpose of the present invention is to provide a fluid ejection device and a method for manufacturing the same, which can be used efficiently and can prolong the life. In order to achieve the above purpose, the present invention provides a fluid ejection device, which includes a substrate, a first through hole, a fluid actuating device, a protective layer, and a thick film layer with hydrophobic properties; A body cavity and a surface, a first through hole is disposed on the surface and is in communication with the fluid cavity; a fluid actuating device is on the surface adjacent to the first through hole and is located outside the fluid cavity of the substrate; a protective layer is provided on the surface; The hydrophobic thick film layer is disposed on the protection tank in a manner outside the flow, and has a second through hole, and the evening hole is in communication with the first through hole. In a preferred embodiment of the present invention, the diameter of one end of the second through hole communicating with the first through hole is larger than the diameter of the other end not communicating with the first through hole. The fluid actuating device may be an electrothermal bubble generator or a thin-film actuator. An electrothermal bubble composed of a resistance layer is preferred. It should be understood that the patterned thick film layer with hydrophobicity is connected to pure water at 90 degrees. The material of the thick thick layer with hydrophobicity may be a photosensitive material, such as polyimide (ρ 〇 1 y ^ ^ de), epoxy resin, methyl acrylic Acid propylene glycol
1220414 五、發明說明（3) methacrylate)、壓克力樹脂（acrylic resin)、丙稀酸或 丙烯酸曱酯清漆型環氧樹脂（a n a c r y 1 a t e 〇 r a methacrylate of a novolak epoxy resin)、？么楓 (polysulfones)、聚苯撐（polyphenylenes)、聚鱗楓 (polyether su 1 f ones )、聚醯胺一醯亞胺 (polyamide-imi des，PAI)、聚胂叉醚（po1yary1ene ethers，PAE)、聚次苯基硫化 sulfides)、聚胂叉醚酮（p〇ly 苯氧樹脂（phenoxy resins)、 (polycarbonates)、聚_ —醯 聚對二氮（雜）萘（polyquinoxa (polyquinolines)、聚苯并咪 聚苯 σ惡唾（polybenzoxazoles) (polybenzothiazoles)、聚口惡 材質，而結構層之材質為低應 矽（SiN)。 又在本發明中，提供一種 包括下列步驟：提供一基底； 之一第一面上；形成一圖案化 案化犧牲層；設置一流體致動 致動裝置位於流體腔外；形成 上，以形成一訊號傳送線路； 覆蓋流體致動裝置；在保護層 層；形成一流體通道於基板之 物（polyphenylene arylene ether ketones)、 聚碳酸樹脂 0 亞胺（polyether i m i des )、 lines)、聚氮（雜）萘 口坐（polybenzimidazoles)、 ‘ 、聚苯并噻唑 二唾（polyoxadiazoles)等 力之氮氧化矽（Si 0N)或氮化 流體喷射裝置之製造方法， 形成一圖案化犧牲層於基底 結構層於基底上，且覆蓋圖 裝置於結構層上，其中流體 一圖案化導電層於結構層 在結構層上形成一保護層並 上形成一具疏水性之厚膜 一第二面，且第二面係相對1220414 V. Description of the invention (3) methacrylate), acrylic resin, acrylic acid or acrylic acid acrylate varnish type epoxy resin (a n a c r y 1 a t e 〇 r a methacrylate of a novolak epoxy resin),? Polysulfones, polyphenylenes, polyether su 1 f ones, polyamide-imi des (PAI), po1yary1ene ethers (PAE) , Polyphenylene sulfides), polyethylidene ether ketones (polyol phenoxy resins), (polycarbonates), poly-p-diazo (hetero) naphthalene (polyquinolines), polyphenylene Benzene polybenzoxazoles (polybenzothiazoles), poly mouth evil materials, and the material of the structure layer is low silicon (SiN). In the present invention, there is provided a method including the following steps: providing a substrate; On the first side; forming a patterned sacrificial layer; setting a fluid-actuated actuating device outside the fluid cavity; forming on to form a signal transmission line; covering the fluid-actuating device; on a protective layer; forming a Fluid channels on the substrate (polyphenylene arylene ether ketones), polycarbonate (polyether imi des), lines), polynitrobenz (hetero) naphthalene (polybenzimidazoles), ', (Polyoxadiazoles) isotonic silicon oxynitride (Si 0N) or nitrided fluid ejection device manufacturing method, forming a patterned sacrificial layer on the base structure layer on the substrate, and overlaying the device on the structure layer, wherein the fluid is a pattern A conductive layer is formed on the structural layer to form a protective layer on the structural layer, and a thick thick film with hydrophobic properties is formed on the second surface, and the second surface is opposite
0535-10443TWF(N1);A03 302;J AMNGWO.p t d 第7頁 1220414 流 ,一”復盖一具有 具有增加結構強度並改善表面 貝、施例’以更詳細地說明本發 五、發明說明（4) 於第一面，以露出犧牲層； 以及形成贺孔之於厚膜層 流體腔連通且鄰近流體致動 應了解的是具疏水性之 具疏水性之厚膜層係藉由旋 式而彼覆於保護層上，二^ 曰丄，而結 矽（SiON)或氮化矽（SiN)。 形成喷孔的步驟，包括 形成一上窄下寬之第— 不一通孔 層，以形成連通流體腔與第 本發明主要在單石化的 疏水性質結構加強層，使其 性質的功能。 ’、 以下配合圖式以及較佳 明。 移除犧牲層以形成_、、ώ 、保罐思t 々,L體腔； 保4層與、结構 裝置。 貰孔與 厚膜層覆蓋氣泡產生裳 轉塗佈之方式弋且 構層之材質為低應力之氮氧： 利用-灰階光罩及微影製程， 二刻保護層及結構 一通孔的弟一通孔。 赫 A 4+ 壯 m d _ 具有 實施方式： 第一實施例 參考弟2圖，其顯示太0535-10443TWF (N1); A03 302; J AMNGWO.ptd page 7 1220414 flow, one "cover one with increased structural strength and improved surface shell, examples' to explain the present invention in more detail 5. 4) on the first side to expose the sacrificial layer; and to form a hole to communicate with the thick film layer fluid cavity and actuate adjacent to the fluid, it should be understood that the hydrophobic thick film layer is hydrophobic They are covered on the protective layer, and they are called silicon dioxide (SiON) or silicon nitride (SiN). The step of forming the spray hole includes forming a first—not through—hole layer with a narrow upper and lower width to form a connection. The fluid cavity and the present invention are mainly in the monolithic hydrophobic nature structure strengthening layer to make its properties function. ', The following matching drawings and better explanation. The sacrificial layer is removed to form _ ,, 、, 保 罐 思 t 々, L body cavity; 4 layers and structural devices are guaranteed. The method of recoating is made by covering holes with thick holes and thick film layers, and the material of the structure layer is low-stress nitrogen and oxygen: using-gray scale photomask and lithography process, Two layers of protective layer and structure, one through hole and one through hole. He A 4+ Z m d _ has an implementation mode: the first embodiment refers to the figure 2 of the brother, which shows too
P / 1 , ^ . y 本土明之流體噴射裝置之第一眚 施例’本貫施例之流體嗔矣+ 貝 n4 士神贺射裝置10〇包括一基材110、一第 保護層1 3 0、以及 一通孔11 4、一流體致動裝置丨2 〇、一 ^ 具疏水性之厚膜層1 4 〇。 基材110包括一石夕基底1 層112設置在矽基底ill上， 11、以及一結構層1丨2，結構 且在矽基底1 1 1與結構層丨丨2之P / 1, ^. Y The first example of the native fluid ejection device 'the fluid of this example' + ben4 The Shishenhe ejection device 100 includes a substrate 110 and a first protective layer 1 3 0 And a through hole 11 4, a fluid actuating device 丨 2 〇, a thick film layer with hydrophobic 14 〇. The substrate 110 includes a silicon substrate 1 layer 112 disposed on a silicon substrate ill, 11 and a structural layer 1 丨 2, and the structure is between the silicon substrate 1 1 1 and the structural layer 丨 丨 2
貝 1220414Shell 1220414
間形成一流體腔1 1 3，第一通孔1 1 4則形成在結構層i i 2中 並與流體腔1 1 3相連通。A fluid cavity 1 1 3 is formed therebetween, and a first through hole 1 1 4 is formed in the structural layer i i 2 and communicates with the fluid cavity 1 1 3.
流體致動裝置1 2 0係設置於結構層1 1 2之一表面 1122(參考第3a圖）上，並鄰近第一通孔114，且位於基材 11 0中之流體腔1 1 3外；流體致動裝置可為電熱式氣泡產生 為’亦可為壓電式薄膜致動器，較佳者為由電阻層所構成 之電熱式氣泡產生器。在本實施例中，氣泡產生裝置1 2 〇 包括一第一加熱器121、以及一第二加熱器122，第一加熱 為1 2 1如習知般，用以在流體腔1 1 3内產生一第一氣泡（參 考第1圖）’第二加熱器122與第一加熱器121分別位於第一 通孔1 1 4的相對側，且如習知般，用以在流體腔丨丨3内產生 一第二氣泡（參考第1圖）以將流體腔11 3内之流體射出。 上述氣泡產生裝置更包括一訊號傳送線路（未圖示）， 形成於該結構層與該保護層之間，連接驅動氣泡產生裝置 的電路。訊號傳送線路係利用物理氣相沉積法（p V £))沉積 一圖案化導電層，例如A 1、Cu、A 1 Cu或其他導線材料於結 構層上。 保護層1 3 0 (例如氮化石夕）設置於結構層1 1 2之表面1 1 2 2 上’且具有一第三通孔1 3 1。具疏水性之厚膜層1 4 〇設置於 保護層130上’且具有一第二通孔141，其中第二通孔141 經由第三通孔131而與第一通孔114連通。 應了解的疋具疏水性之圖案化厚膜層與純水之接觸角 大於9 0度。具疏水性之厚膜層之材質可為較佳者為感光性 高分子材質，例如聚亞酿胺（ρ 〇 1 y i m i d e )、環氧樹脂The fluid actuating device 12 is disposed on one surface 1122 (refer to FIG. 3a) of the structural layer 1 12 and is adjacent to the first through hole 114 and located outside the fluid cavity 1 1 3 in the substrate 110. The fluid-actuated device may be an electro-thermal bubble generator or a piezoelectric thin-film actuator, preferably an electro-thermal bubble generator composed of a resistance layer. In this embodiment, the bubble generating device 1 2 0 includes a first heater 121 and a second heater 122. The first heating is 1 2 1 as conventionally used for generating in the fluid cavity 1 1 3 A first bubble (refer to FIG. 1) 'the second heater 122 and the first heater 121 are respectively located on the opposite sides of the first through hole 1 1 4 and are conventionally used in the fluid cavity 丨 3 A second bubble (refer to FIG. 1) is generated to eject the fluid in the fluid chamber 113. The above-mentioned bubble generating device further includes a signal transmission line (not shown), which is formed between the structural layer and the protective layer and is connected to a circuit driving the bubble generating device. The signal transmission line uses physical vapor deposition (p V £)) to deposit a patterned conductive layer, such as A 1, Cu, A 1 Cu, or other wire materials on the structure layer. A protective layer 1 3 0 (for example, nitrided cyanide) is disposed on the surface 1 1 2 2 of the structural layer 1 1 'and has a third through hole 1 3 1. The thick thick film layer 140 having a hydrophobic property is disposed on the protection layer 130 'and has a second through hole 141, wherein the second through hole 141 communicates with the first through hole 114 through the third through hole 131. It should be understood that the contact angle between the patterned thick film layer with hydrophobicity and pure water is greater than 90 degrees. The material of the thick thick layer with hydrophobicity may be a photosensitive polymer material such as polyurethane (ρ 〇 1 y i m i d e), epoxy resin
1220414 五、發明說明（6) (epoxy resin)、曱基丙稀酸環氧丙脂（glycidyl methacrylate)、壓克力樹脂（acrylic resin)、丙烯酸或 丙稀酸曱酯清漆型環氧樹脂（a n a c r y 1 a t e 〇 r a methacrylate of a novolak epoxy resin)、聚楓 (polysulfones)、聚苯撐（polyphenylenes)、聚 楓 (polyether sul f ones)、聚醯胺一醯亞胺 (polyamide-imides ， PAI)、聚胂叉醚（po1yary1ene ethers， PAE)、聚次苯基硫化物（polyphenylene sulfides)、聚胂叉_ 酮（polyarylene ether ketones)、 苯氧樹脂（p h e η o x y r e s i n s )、聚碳酸樹脂 (polycarbonates)、聚醚一醯亞胺（p〇lyether imides)、 聚對二氮（雜）萘（polyqu inoxalines)、？畏氮（雜）萘 (polyquinolines)、聚笨并咪唑（p〇lybenzimidazoles)、 聚苯噁唑（polybenzoxazoles)、聚苯并噻唑 (polybenzothiazoles)、聚噁二唑（p〇iyoxadiaz〇ies)等 材質，而結構層之材質為低應力之氮氧化矽（S i 〇 n )，其應 力介於100〜200百萬帕MPa)。 低應力之氣氧化石夕（S i 0 N )薄膜是一種跪性材料。在本 發明之流體噴射裝置中，主要將低應力之氮氧化石夕形成一 懸浮結構，此懸浮結構在實際操作上，必須經過多次的熱 應力以及外力衝擊，因而必須具備相當程度的結構強度。 若僅以單層低應力之氮氧化矽，在結構強度上會有相當的 限制。因此本發明提出在低應力之氮氧化矽層外部彼覆上 一既定厚度且經曝光產生交聯作用（Cr〇ss— 1 i nk )的疏水性1220414 V. Description of the invention (6) (epoxy resin), glycidyl methacrylate, acrylic resin, acrylic or acrylic ester varnish type epoxy resin (anacry 1 ate 〇ra methacrylate of a novolak epoxy resin), polysulfones, polyphenylenes, polyether sul f ones, polyimide-imides (PAI), polyimide Po1yary1ene ethers (PAE), polyphenylene sulfides, polyarylene ether ketones, phen oxyresins, polycarbonates, polyethers Monoimide (polyol imides), poly-p-diazine (hetero) naphthalene (polyqu inoxalines),? Materials such as polyquinolines, polybenzimidazoles, polybenzoxazoles, polybenzothiazoles, and polyoxazodiaz〇ies, The material of the structural layer is low-stress silicon oxynitride (Si oon), and the stress is between 100 and 200 million Pascals (MPa). Low-stress gas oxide stone eve (S i 0 N) film is a kneeling material. In the fluid ejection device of the present invention, the low-stress oxynitride is mainly formed into a suspension structure. In actual operation, the suspension structure must undergo multiple thermal stresses and external force impacts, so it must have a considerable degree of structural strength. . If only a single layer of low-stress silicon oxynitride is used, the structural strength will be quite limited. Therefore, the present invention proposes to coat a low-stress silicon oxynitride layer on the outside with a predetermined thickness and to generate a cross-linking effect (CrOss-1 ink) after exposure.
0535-10443TO( N1); A03302; JAMNGWO. ptd 第 10 頁 12204140535-10443TO (N1); A03302; JAMNGWO. Ptd page 10 1220414
$厚膜層’可有效地增加懸浮結構的強度，使流 置使用的壽命顯著提升。 喷射敦 ^ 本貫施例之流體噴射裝置之構成如上所述，以下象 苐3 a 3 e圖說明本實施例之一種流體喷射裝置之製造方 法’其中僅顯示第2圖中之P 1部分。 牲層石夕基底111，且在石夕基底111上形成1案化犧 曰禾圖不）。犧牲層係由化學氣相沉積（C VD )法所沉 矽酸磷玻璃（BPSG)、矽酸磷玻璃（psG)或其他氧:矽The "thick film layer" can effectively increase the strength of the suspension structure, and significantly improve the service life of the fluid. Ejector ^ The structure of the fluid ejection device of this embodiment is as described above, and the following figure 苐 3 a 3 e illustrates a method of manufacturing a fluid ejection device of this embodiment ', wherein only part P1 in Fig. 2 is shown. The animal layer Shixi base 111, and a case of sacrifice is formed on the stone Xi base 111). The sacrificial layer is deposited by chemical vapor deposition (C VD) method. Phosphorus silicate glass (BPSG), phosphorous silicate glass (psG) or other oxygen: silicon
貝。接著，順應性形成一圖案化結構層丨丨2於基底丨j i 覆蓋圖案化犧牲層。結構層112可由化學氣相沉積 1，、）所形成之一低應力之氮氧化矽（S i 0Ν )薄膜。接 ^ 以濕蝕刻法蝕刻於基底111背面形成一流體通道，且 路出犧牲層。然後，再蝕刻犧牲層以形成一流體腔11 3， 如第3a圖所示。shell. Then, a patterned structure layer 丨 2 is formed on the substrate compliantly to cover the patterned sacrificial layer. The structural layer 112 may be a low-stress silicon nitride oxide (S i ON) film formed by chemical vapor deposition (CVD). A wet channel is etched on the back surface of the substrate 111 to form a fluid channel, and a sacrificial layer is formed. Then, the sacrificial layer is etched to form a fluid cavity 113, as shown in FIG. 3a.
明參考第3 b圖，設置一氣泡產生裝置1 2 〇於結構層11 2 上’。此氣泡產生裝置1 20位於流體腔1 1 3外。氣泡產生裝置 If 0可為電熱式氣泡產生器，亦可為一壓電式氣泡產生 為1車父佳者為由一電阻層所構成之電熱式氣泡產生器，其 中電阻層係由物理氣相沉積法（PVD)，例如蒸鍍、濺鍍法 或反應性濺鑛法，形成如Hf B2、TaAl、TaN或其他電阻材 料。接著，在結構層丨丨2上形成一保護層丨3〇，如第3c圖所 =。之後在保護層1 30上形成一具疏水性之厚膜層丨4〇，如 第3d圖所示；最後，分別在結構層丨丨2、保護層} 3〇、具疏 水性之厚膜層140上形成相互連通的第一通孔114、第三通Referring to Fig. 3b, a bubble generating device 12 is provided on the structure layer 11 2 '. The bubble generating device 120 is located outside the fluid chamber 1 1 3. The bubble generation device If 0 can be an electro-thermal bubble generator, or a piezoelectric bubble generator. One is a car-type bubble generator composed of a resistance layer, wherein the resistance layer is composed of a physical vapor phase. A deposition method (PVD), such as evaporation, sputtering, or reactive sputtering, forms, for example, Hf B2, TaAl, TaN, or other resistive materials. Then, a protective layer 3o is formed on the structural layer 2 as shown in FIG. 3c. Afterwards, a thick film layer with hydrophobicity is formed on the protective layer 130, as shown in FIG. 3d; finally, the structure layer, the protective layer, and the thick film layer with hydrophobic properties are separately formed. A first through-hole 114 and a third through-hole communicating with each other are formed on 140
0535- 10443T1VF(N1) ；A03302; JAMNGWO. ptd0535- 10443T1VF (N1); A03302; JAMNGWO. Ptd
1220414 五、發明說明（8) 孔131、第二通孔141，如第3e圖所示，其中第_通孔114 與流體腔11 3連通。 上述具疏水性之厚膜層140可藉由滾壓貼合之方式或 高速旋轉塗佈之方式而坡覆於保護層上。 如上所述，本實施例之流體噴射裝置在其外部形成一 層具疏水性之厚膜層，一方面可加強流體噴射裝置的結構 強度，另一方面利用厚膜層本身的疏水特性，^得流&經1220414 V. Description of the invention (8) The hole 131 and the second through hole 141 are as shown in FIG. 3e, wherein the _th through hole 114 is in communication with the fluid cavity 113. The above-mentioned thick film layer 140 with hydrophobicity can be sloped on the protective layer by roll lamination or high-speed spin coating. As described above, the fluid ejection device of this embodiment forms a thick, hydrophobic film layer on the outside, which can strengthen the structural strength of the fluid ejection device on the one hand, and utilize the hydrophobic characteristics of the thick film layer itself on the other hand, so that & Warp
由歧管回填至流體腔時’表面的疏水性質會抑制i體經由 喷孔擴散至噴射裝置表面。 W 又，具疏水性之厚膜層也可使液滴飛離的通1辦 而使飛離液滴的脫離方向更加穩定。 ks又’ 當氣泡於該流體腔之入口形成時，合 腔回流至歧管。同時使流體腔内的壓力二又制流體由流體 的壓力上升至可強迫流體由增加厚度之?加’當流體腔内 其飛離流體方向。流體由噴孔射出後，2孔射出，以穩定 至流體腔時，表面的疏水性質會抑制、☆/泉體經由歧管回填 喷射裝置表面。 |凌體經由噴孔擴散至 第二實施例When the manifold is backfilled to the fluid cavity, the hydrophobic nature of the surface will inhibit the i-body from diffusing to the surface of the spray device through the spray holes. W In addition, a thick film layer with hydrophobic properties can also make the droplets fly away and make the detachment direction of the flying droplets more stable. ks 和 ’When the bubble is formed at the inlet of the fluid cavity, the combined cavity returns to the manifold. At the same time, the pressure in the fluid cavity is increased, and the fluid is raised from the pressure of the fluid to force the fluid to increase in thickness. When the fluid cavity is flying away from the fluid direction. After the fluid is ejected from the nozzle, two holes are ejected to stabilize the fluid to the fluid cavity. The hydrophobic properties of the surface will be suppressed. ☆ / Spring body backfills the surface of the spray device through the manifold. The Ling body diffuses to the second embodiment through the nozzle hole
第4圖係為本發明之流體喑M y 収貝射裝蓄 •實施例之示 氣泡產生裝置 '實施例之流 意圖，在本實施例之流體噴射裝置夏之第 120係由單一加熱器120a所構成，1()()&中 體喷射裝置1 〇 0之不同I 相同，在此省略其說明 b為與塗 至於苴几 、弟 A他構& 成均與第一實施例FIG. 4 is a flow diagram of the present invention's fluid 喑 M y receiving and filling device. The embodiment of the bubble generation device is an example of the embodiment. In the fluid ejection device of this embodiment, the 120th series of the summer is composed of a single heater 120a. The structure is the same as the difference between 1 () () & medium body ejection device 1000, and the description thereof is omitted here. It is the same as that of the first embodiment and the first embodiment.
12204141220414
低應力之氮氧化矽（S i 0 N ) 發明之流體喷射裝置中，主要 懸浮結構，此懸浮結構在實際 應力以及外力衝擊，因而必須 若僅以單層低應力之氮氧化矽 限制。因此本發明提出在低應 一既定厚度且經曝光產生交聯 之厚膜層，可有效地增加懸浮 置使用的壽命顯著提升。 由於在本實施例之流體噴 性之厚膜層，因此也可達到與 即，可加強流體噴射裝置的結 層本身的疏水特性，使得流體 表面的疏水性質會抑制流體經 面。而具疏水性之厚膜層也可 液滴的脫離方向更加穩定。 第三實施例 薄膜是一種脆性材料。在本 將低應力之氮氧化矽形成一 操作上，必須經過多次的熱 具備相當程度的結構強度。 ，在結構強度上會有相當的 力之氮氧化矽層外部披覆上 作用（cross-1 ink)的疏水性 結構的強度，使流體喷射裝 射I置外部也形成有具疏水 第一實施例相同的功效，亦 構強度，另一方面利用厚膜 經由歧管回填至流體腔時， 由喷孔擴散至喷射裝置表 提供一較長的通道，使飛離In the fluid ejection device invented by low-stress silicon oxynitride (S i 0 N), the suspension structure is mainly used. This suspension structure is impacted by actual stress and external force. Therefore, it must be limited by a single layer of low-stress silicon oxynitride. Therefore, the present invention proposes that a thick film layer with a low predetermined thickness and cross-linking upon exposure can effectively increase the life of the suspension in a significant way. Due to the thick film layer of the fluid ejection property in this embodiment, the hydrophobic property of the layer of the fluid ejection device itself can also be achieved, so that the hydrophobic property of the fluid surface can inhibit the fluid passing surface. A thick thick film layer with hydrophobic properties can also stabilize the direction of droplet dropout. Third Embodiment A thin film is a brittle material. In the operation of forming low-stress silicon oxynitride, it must pass through multiple times of heat to have a considerable degree of structural strength. In terms of structural strength, there will be considerable force on the outer cover of the silicon oxynitride layer. The strength of the hydrophobic structure (cross-1 ink) makes the fluid ejection device I also have a hydrophobic first embodiment. The same effect and strength are also formed. On the other hand, when a thick film is used to backfill the fluid cavity through the manifold, the diffusion from the nozzle hole to the surface of the spray device provides a longer channel to fly away.
第5a〜5c圖係為本發明之流體喷射裝置之一變形例。 利用多次黃光製程或藉控制黃光製程參數等多種方 制第二通孔1 41b的外型，以獲得欲得之喷孔形狀。， 利用厚膜本身所具之負型光阻的特性，並加上灰階光 使用，可獲知倒漏斗狀（inverted funnel shaped)之、 孔，即出π端寬而入口端窄的通孔。請參考第5a圖，由於Figures 5a to 5c are a modification of the fluid ejection device of the present invention. The shape of the second through hole 1 41b is controlled by using multiple yellow light processes or by controlling the yellow light process parameters to obtain the desired shape of the spray hole. By using the characteristics of the negative photoresistor of the thick film itself and the use of gray-scale light, it can be known that the inverted funnel shaped hole is a through hole with a wide π end and a narrow entrance end. Please refer to Figure 5a, as
1220414 五、發明說明（ίο) 灰階光罩500可在不同的特定區域提供不同的透光率，因 此在預形成的喷孔中心處52 0，設定透光率為零，然後依 序向外漸增透光率’在喷孔外部的透光率為丨〇 〇 %。一入射 光源6 0 0經過灰階光罩之不透光區域5 2 〇、部分透光區域 540以及透光區域560後，產生穿透光源66〇及部分穿透光 源640。負型光阻受到紫外光而產生交聯作用的深度隨著 穿透光源的強度漸強也依序漸深，如此經過顯影後，可形 成如第5 b圖所示的喷孔外形。 請參考第5c圖，最後使用乾蝕刻製程，完成喷孔製 作。流體喷射裝置1 0 0 b中，其改變第二通孔丨4 1 b的形狀， 使第二通孔14 lb與第一通孔114連通的一端的直徑比未與 第一通孔114連通的另一端的直徑大’以使液滴的脫離^ 向能更加穩定。 由於第5 c圖中的流體喷射裝置丨〇 〇b的運作方式是藉由 致動器產生壓力迫使部分流體經由喷孔飛離流體喷=夺: 置。因此，具疏水性之厚膜層可提供一較長的通道並^上 窄下寬的喷孔外形，可使飛離液滴的脫離方向更加稃定。 [本案特徵及效果] 本發明之特徵與效果在 流體射裝置上，一方面加 強度；另一方面利用厚膜層 由歧管回填至流體腔時，表 喷孔擴散至喷射裝置表面。 於形成一具疏水性之厚膜層於 強單石化流體噴射裝置的結構 本身的疏水特性’使得流體經 面的疏水性質會抑制流體經由 而具疏水性之厚膜層也可提供1220414 V. Description of the invention (ίο) The gray scale mask 500 can provide different light transmittance in different specific areas, so at the center of the pre-formed nozzle hole 52 0, set the light transmittance to zero, and then sequentially outward Increasing light transmittance 'The light transmittance outside the orifice is 100%. An incident light source 600 passes through the opaque region 5 2 0, the partially transparent region 540, and the transparent region 560 of the gray scale mask, and then generates a penetrating light source 66 and a partially penetrating light source 640. The negative photoresist is exposed to ultraviolet light and the depth of cross-linking is gradually increased with the intensity of the penetrating light source. After the development, the shape of the nozzle as shown in Figure 5b can be formed. Please refer to Figure 5c, and finally use the dry etching process to complete the spray hole fabrication. In the fluid ejection device 1 0 0 b, it changes the shape of the second through hole 4 1 b so that the diameter of the end of the second through hole 14 lb communicating with the first through hole 114 is not larger than that of the end not communicating with the first through hole 114. The diameter at the other end is large to make the dropout direction of the droplet more stable. Because the fluid ejection device in Fig. 5c operates in a way that pressure is generated by the actuator to force a part of the fluid to fly away from the fluid through the orifice, the fluid is ejected. Therefore, a thick film layer with hydrophobicity can provide a longer channel and a narrower and wider nozzle hole shape, which can make the escape direction of flying droplets more stable. [Features and Effects of the Case] The features and effects of the present invention are on the fluid ejection device, on the one hand, the strength is increased; on the other hand, when the thick film layer is used to backfill the fluid cavity from the manifold, the surface spray holes diffuse to the surface of the ejection device. In the formation of a thick film layer with a strong hydrophobicity in the structure of the strong monochemical fluid ejection device itself, the hydrophobic property ’makes the hydrophobic property of the fluid surface to inhibit the passage of the fluid, and a thick film layer with hydrophobic properties can also be provided.
0535-10443T1VF( N1); A03 302; J AMNGWO. p t d 第14頁 1220414 五、發明說明（11) 一較長的通道，使飛離液滴的脫離方向更加穩定。 還有，由於具疏水性之厚膜層使得單石化流體喷射裝 置的結構強度增加，故能使流體喷射裝置的使用壽命大幅 地提升。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此項技藝者，在不脫離本發明之精 神和範圍内，當可作更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。0535-10443T1VF (N1); A03 302; J AMNGWO. P t d p. 14 1220414 V. Description of the invention (11) A longer channel makes the detachment direction of flying droplets more stable. In addition, since the thick film layer with hydrophobic properties increases the structural strength of the single petrochemical fluid ejection device, the service life of the fluid ejection device can be greatly improved. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make changes and retouches without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application.
0535-10443rnVF(Nl);A03302;JAMNGW〇.ptd 第15頁 1220414 圖式簡單說明 第1圖顯示一種習知的單石化的流體喷射裝置； 第2圖顯示本發明之流體喷射裝置之第一實施例； 第3a〜3e圖說明本發明之第一實施例之流體喷射裝置 之製造方法，其中僅顯示第2圖中之P1部分； 第4圖係為本發明之流體喷射裝置之第二實施例之示 意圖；以及 第5a〜5c圖係為利用灰階微影製程形成疏水性厚膜喷 孔之步驟。 [符號說明] 習知部分（第1圖） 1〜單石化的流體喷射裝置； 1 0〜矽基底； 1 2〜結構層； 1 4〜流體腔； 20〜第一加熱器； 22〜第二加熱器； 2 6〜流體； 3 0〜第一氣泡； 3 2〜第二氣泡。 本案部分（第2〜5圖） I 0 0、1 0 0 a、1 0 0 b〜流體噴射裝置； II 0〜基材； 11 1〜矽基底；0535-10443rnVF (Nl); A03302; JAMNGW.ptd Page 15 1220414 Brief description of the drawing Figure 1 shows a conventional single petrochemical fluid ejection device; Figure 2 shows the first implementation of the fluid ejection device of the present invention Examples; FIGS. 3a to 3e illustrate the manufacturing method of the fluid ejection device according to the first embodiment of the present invention, wherein only the portion P1 in FIG. 2 is shown; and FIG. 4 is the second embodiment of the fluid ejection device according to the present invention. Schematic diagrams; and Figures 5a to 5c are steps for forming a hydrophobic thick film spray hole using a gray-scale lithography process. [Symbol description] Known part (Figure 1) 1 ~ Single petrochemical fluid ejection device; 10 ~ Si substrate; 12 ~ Structural layer; 14 ~ Fluid cavity; 20 ~ First heater; 22 ~ Second Heater; 2 6 to fluid; 3 0 to first bubble; 3 2 to second bubble. Part of this case (Figures 2 to 5) I 0 0, 1 0 0 a, 1 0 b ~ fluid ejection device; II 0 ~ substrate; 11 1 ~ silicon substrate;
0535-10443TWF(Nl);A03302;JAMNGWO.ptd 第16頁 1220414 圖式簡單說明 1 1 2〜結構層； 1 1 2 2〜表面； 1 1 3〜流體腔； 114〜第一通孔； 120、120a〜氣泡產生裝置 1 2 1〜第一加熱器； 1 2 2〜第二加熱器； 1 3 0〜保護層； 1 3 1〜第三通孔； 1 4 0〜具疏水性之厚膜層； 141、14 lb〜第二通孔； 5 0 0〜灰階光罩； 520〜不透光區域； 5 4 0〜部分透光區域； 560〜透光區域； 6 0 0〜入射光源； 6 6 0〜穿透光源； 6 4 0〜部分穿透光源。0535-10443TWF (Nl); A03302; JAMNGWO.ptd Page 16 1220414 Brief description of the drawings 1 1 2 ~ Structure layer; 1 1 2 2 ~ Surface; 1 1 3 ~ Fluid cavity; 114 ~ First through hole; 120 、 120a ~ bubble generator 1 2 1 ~ first heater; 1 2 2 ~ second heater; 1 3 0 ~ protective layer; 1 3 1 ~ third through hole; 1 4 0 ~ thick layer with hydrophobic property 141, 14 lb ~ second through hole; 500 ~ gray scale mask; 520 ~ opaque area; 5 40 ~ partially transparent area; 560 ~ transparent area; 60 ~ incident light source; 6 60 ~~ penetrating light source; 64 ~~ partly penetrating light source.
0535-10443TWF(N1);A03302;J AMNGWO.p t d 第17頁0535-10443TWF (N1); A03302; J AMNGWO.p t d p.17
Claims (1)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92130899A TWI220414B (en) | 2003-11-05 | 2003-11-05 | Fluid injector and method of manufacturing the same |
| DE200410053875 DE102004053875A1 (en) | 2003-11-05 | 2004-11-04 | Fluid injector and method of manufacturing the same |
| US10/982,499 US7252368B2 (en) | 2002-07-12 | 2004-11-05 | Fluid injector |
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| TW92130899A TWI220414B (en) | 2003-11-05 | 2003-11-05 | Fluid injector and method of manufacturing the same |
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| TW200516005A TW200516005A (en) | 2005-05-16 |
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| DE (1) | DE102004053875A1 (en) |
| TW (1) | TWI220414B (en) |
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