CN1579779A - Fluid injection device and its manufacturing method - Google Patents

Fluid injection device and its manufacturing method Download PDF

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Publication number
CN1579779A
CN1579779A CN 03154029 CN03154029A CN1579779A CN 1579779 A CN1579779 A CN 1579779A CN 03154029 CN03154029 CN 03154029 CN 03154029 A CN03154029 A CN 03154029A CN 1579779 A CN1579779 A CN 1579779A
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CN
China
Prior art keywords
substrate
ejection apparatus
fluid ejection
manufacture method
heater
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Pending
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CN 03154029
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Chinese (zh)
Inventor
胡宏盛
陈苇霖
徐聪平
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BenQ Corp
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BenQ Corp
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Priority to CN 03154029 priority Critical patent/CN1579779A/en
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Abstract

The invention provides a produce method of liquid spray equipment. The method including providing fundus and make at least one heater on it. Then form the photo conductor layer on the heater and fundus. Form protect layer on the conductor layer and fundus, in order to isolate the conductor layer. Then etch the protect layer and fundus on sequence to form hatch. Form designed thick film on the protect layer, and liquid cavity is defined in it. At last, move a part of the bottom of the fundus, make the fundus be thin to the hatch to be a spray hatch which is go through the fundus.

Description

Fluid ejection apparatus and preparation method thereof
Technical field
The present invention relates to a kind of little drop ink discharge device and manufacture method thereof, particularly a kind of method of utilizing deep silicon etch and Ginding process to make little drop ink discharge device.
Background technology
Ink gun (ink jet printhead) is one of key element in color inkjet printer, and it comprises top plate, dry film photoresist intermediate layer, and lower plywood.Top plate is normally formed by noble metal (noblemetal) (for example Cu, Au, Ni, or Ni-Au), glass or plastic cement, and is provided with ink jet holes (ink nozzle).Lower plywood is generally thermally-stabilised substrate, and for example Silicon Wafer which is provided with microcircuit so that the heating source of ink gun to be provided.In the ink gun processing procedure, dry film photoresist intermediate layer needs to form required circuit through overexposure, step of developing, and defines ink channel (ink passageway).
Fig. 1 shows known layout (arrangement) profile that contains the ink discharge device of inking chamber.See also Fig. 1, traditionally, the production method of ink discharge device is in substrate 10, and silicon base for example is with chemical vapour deposition technique (CVD) dielectric layer 20, for example silicon oxide layer.Then, with physical vaporous deposition (PVD) or reactive sputtering method deposit patterned resistive layer 30, for example HfB 2, TaAl, TaN or TiN, to form a plurality of heating element heaters.Then, with physical vaporous deposition (PVD) or sputtering method deposit patterned conductive layer 40, for example Al, Cu or its alloy material are to form signal transmission elements.Then, be used for completely cutting off the protective layer 50 of ink and heating element heater with chemical vapour deposition technique (CVD) deposition.
Then, lining thick-film material 60 on protective layer 50, preferred photosensitive polymer material, pi (polyimide) for example holds the fluid cavity 70 of ink in order to formation.Afterwards, making through manifold and sticking spray nozzle sheet 80, promptly finish the making of ink gun.Wherein spray nozzle sheet 80 comprises and electroplates two kinds of sheet and flexible circuit boards.Utilize the made ink discharge device of this kind mode, because heating element heater is positioned under the spray orifice 90, and the ink jet fluid pearl pulls back by liquid still that strength makes it and fluid cavity 70 breaks away from, thereby can't effectively restrain the formation of satellite droplet.No matter in addition, be positioned under the spray orifice 90 for making heating element heater, be attaching type spray orifice or laser beam perforation formula spray orifice therefore, all need have quite high accuracy, influences processing procedure efficient and cost greatly.
United States Patent (USP) discloses a kind of liquid pearl injection apparatus that uses etching mode to make fluid cavity for No. 6102530.See also the liquid droplet ejection apparatus of Fig. 2, the corresponding one group of heater that is constituted by the different resistor disc 130a of two resistances and 130b and lead 140 of each fluid cavity 170.In heating process, because the resistance difference of resistor disc causes the resistor disc 130a near manifold 160 can produce the first bubble 180a.The first bubble 180a produces the effect of similar valve, and detached flow body cavity 170 is connected with manifold 160, reaches fluid displacement and the result who reduces the flow-disturbing effect in the control fluid cavity 170 simultaneously.Resistor disc 130b produces the second bubble 180b and the first bubble 180a pushes discharge liquid jointly.Yet, because fluid cavity 170 is to use the etching mode made, architectural configurations layer 120 on fluid cavity, heating resistor film 130a and 130b place on the structure sheaf 120.Because this structure sheaf 120 is suspended on the fluid cavity 170,, all need do quite strict control therefore for production efficiency of products and durability.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of little drop ink discharge device and manufacture method thereof, main mode of grinding by deep silicon etch and wafer, directly on silicon substrate, form jet orifice, can improve the accuracy of spray orifice and reach and dwindle the function of spraying particle diameter, minimizing flow-disturbing effect, avoiding satellite droplet and increase resolution.
According to above-mentioned purpose, the invention provides a kind of manufacture method of fluid ejection apparatus, comprise the following steps: to provide substrate; Form at least one heater in substrate; Form patterned conductive layer in heater and substrate; Form protective layer and cover in conductive layer and the substrate, with isolated conductive layer; Etch protection layer and substrate in regular turn is to form opening; Form patterned thick film on protective layer, wherein definition has fluid cavity; And remove part substrate bottom, making the thickness of substrate be thinned to opening becomes the spray orifice that runs through substrate.
According to above-mentioned purpose, the present invention further provides a kind of manufacture method of fluid ejection apparatus, comprise the following steps: to provide substrate; Form insulating barrier in substrate; Form at least one heater on insulating barrier; Forming patterned conductive layer covers on above-mentioned heater and the insulating barrier; Form protective layer and cover on conductive layer and the insulating barrier, with isolated conductive layer; Remove part substrate bottom, make the thickness attenuation of substrate; Etch protection layer, insulating barrier and substrate in regular turn runs through the spray orifice of substrate with formation; And form patterned thick film on protective layer, wherein definition has fluid cavity.
According to above-mentioned purpose, the present invention provides a kind of fluid ejection apparatus in addition, comprising: substrate; Heater is formed in the substrate; Patterned conductive layer covers in heater and the substrate; Protective layer covers in conductive layer and the substrate, with isolated conductive layer; Patterned thick film is formed in the substrate, and wherein definition has fluid cavity; And spray orifice, be positioned at substrate, in order to spray the spray orifice that leaves as fluid.
Below cooperate graphic and preferred embodiment, to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the layout profile that shows known little drop ink discharge device.
Fig. 2 is the liquid pearl injection apparatus that shows known use etching mode making fluid cavity.
Fig. 3 A to Fig. 3 C is the layout profile of first embodiment of little drop ink discharge device according to the present invention.
Fig. 4 A to Fig. 4 C is the layout profile of second embodiment of little drop ink discharge device according to the present invention.
Fig. 5 A to Fig. 5 C is the layout profile of the 3rd embodiment of little drop ink discharge device according to the present invention.
Fig. 6 is the allocation plan of wafer through cutting, encapsulating and assemble that shows that little drop ink discharge device of the present invention is finished.
Fig. 7 is the layout profile that shows the little drop ink discharge device of the present invention, in order to show the allocation position of little drop ink discharge device.
Symbol description
Known portions (Fig. 1,2)
10~substrate; 20~dielectric layer;
30~resistive layer; 40~conductive layer;
50~protective layer; 60~thick film;
70~fluid cavity; 80~spray nozzle sheet;
90~spray orifice; 120~structure sheaf;
130a and 130b~resistor disc; 140~lead;
160~manifold; 170~fluid cavity;
180a~first bubble; 180b~second bubble.
This case part (Fig. 3~7)
200~substrate; 220~dielectric layer;
230~resistive layer; 240~conductive layer;
250~protective layer; 260a~opening;
260b~perforation; 270~thick film;
280~fluid cavity; 450~liquid pearl;
500~spray nozzle sheet; 510~perforate;
Wafer after 600~cutting.
Embodiment
Embodiment 1
Below utilize Fig. 3 A to Fig. 3 C that the layout profile and preparation method thereof of first embodiment of the little drop ink discharge device of the present invention is described.See also Fig. 3 A, provide in the substrate 200, for example silicon base.Then, with chemical vapour deposition technique (CVD) dielectric layer 220, silicon oxide layer for example, thickness range 1500~2000 dusts () are to cover the surface of silicon base 200.Then, with physical vaporous deposition (PVD), for example evaporation, sputtering method or reactive sputtering method, deposit patterned resistive layer 230, for example HfB 2, TaAl, TaN or other resistance materials.Then, with physical vaporous deposition (PVD) deposit patterned conductive layer 240, for example Al, Cu, AlCu or other conductor materials obtain signal transmission component.Then, deposition is used for completely cutting off the protective layer 250 of ink and heating element heater 230.The material of protective layer 250 is that silicon monoxide, silicon nitride, carborundum or its composite stack form, and more can deposit shock proof metal level on protective layer 250, to increase the service life of device.
See also Fig. 3 B, utilize photoresistance coating, exposure and step of developing, definition spray orifice position (not shown) in substrate.Utilize the deep silicon etch technology again, for example electric paste etching, wet etching, chemical gas etching or Laser Processing processing procedure carry out etching to protective layer 250, conductive layer 240 and silicon base 200, to form opening 260a on the spray orifice position, then photoresistance are removed.
Then; see also Fig. 3 C; on protective layer 250; with the roll extrusion mode thick film 270 that is covered; preferred photosensitive polymer material; pi (polyimide) for example; epoxy resin (epoxy resin); GMA (glycidyl methacrylate); acrylic resin (acrylic resin); acrylic or methacrylic acid esters phenolic resin varnish (an acrylate or a methacrylate of anovolak epoxy resin); polysulfones (polysulfones); polyphenylene (polyphenylenes); polyether sulfone (polyether sulfones); polyamide-imides (polyamide-imides; PAI); poly (arylene ether) (polyarylene ethers; PAE); polyphenylene sulfides (polyphenylene sulfides); polyarylene ether ketone (polyarylene ether ketones); phenoxy resin (phenoxy resins); polycarbonate resin (polycarbonates); polyethers-acid imide (polyether imides); polyquinoxaline (polyquinoxalines); poly quinoline (polyquinolines); polybenzimidazoles (polybenzimidazoles); polybenzoxazole (polybenzoxazoles); polybenzothiozole (polybenzothiazoles) polyoxadiazole materials such as (polyoxadiazoles) is in substrate 200 surfaces.Dry film 270 will be suspended from above-mentioned perforation 260b top this moment, utilize the mode of contraposition, exposure and development again, hold the fluid cavity 280 of ink in order to formation.Then, utilize etching, mechanical lapping or cmp (CMP) processing procedure to remove part substrate 200 bottoms, make its thickness be thinned to 80~200 microns, this moment, opening 260a formed the perforation 260b that runs through substrate because of substrate 200 attenuation, and this perforation 260b promptly becomes the spray orifice in the device.
Embodiment 2
Below utilize Fig. 4 A to Fig. 4 C that the layout profile and preparation method thereof of second embodiment of the little drop ink discharge device of the present invention is described.See also Fig. 4 A, provide in the substrate 200, for example silicon base.Then, with chemical vapour deposition technique (CVD) dielectric layer 220, silicon oxide layer for example, thickness range 1500~2000 dusts () are to cover the surface of silicon base 200.Then, with physical vaporous deposition (PVD), for example evaporation, sputtering method or reactive sputtering method, deposit patterned resistive layer 230, for example HfB 2, TaAl, TaN or other resistance materials.Then, with physical vaporous deposition (PVD) deposit patterned conductive layer 240, for example Al, Cu, AlCu or other conductor materials obtain signal transmission component.Then, deposition is used for completely cutting off the protective layer 250 of ink and heating element heater 230.The material of protective layer 250 is that silicon monoxide, silicon nitride, carborundum or its composite stack form, and more can deposit shock proof metal level on protective layer 250, to increase the service life of device.Then, utilize etching, mechanical lapping or cmp (CMP) processing procedure to remove part substrate 200 bottoms, make its thickness attenuation.
See also Fig. 4 B, utilize photoresistance coating, exposure and step of developing, definition spray orifice position (not shown) in substrate.Utilize the deep silicon etch technology again; for example electric paste etching, wet etching, chemical gas etching or Laser Processing processing procedure; protective layer 250, conductive layer 240 and silicon base 200 are carried out etching, and to form the perforation 260b that runs through substrate on the spray orifice position, this perforation 260b promptly becomes the spray orifice in the device.
Then; see also Fig. 4 C; on protective layer 250; with the roll extrusion mode thick film 270 that is covered; preferred photosensitive polymer material; pi (polyimide) for example; epoxy resin (epoxy resin); GMA (glycidyl methacrylate); propylene esters resin (acrylic resin); acrylic or methacrylic acid phenolic resin varnish (an acrylate or a methacrylate of anovolak epoxy resin); polysulfones (polysulfones); polyphenylene (polyphenylenes); polyether sulfone (polyether sulfones); polyamide-imides (polyamide-imides; PAI); poly (arylene ether) (polyarylene ethers; PAE); polyphenylene sulfides (polyphenylene sulfides); polyarylene ether ketone (polyarylene ether ketones); phenoxy resin (phenoxy resins); polycarbonate resin (polycarbonates); polyethers-acid imide (polyether imides); polyquinoxaline (polyquinoxalines); poly quinoline (polyquinolines); polybenzimidazoles (polybenzimidazoles); polybenzoxazole (polybenzoxazoles); polybenzothiozole (polybenzothiazoles) polyoxadiazole materials such as (polyoxadiazoles) is in substrate 200 surfaces.Dry film 270 will be suspended from above-mentioned perforation 260b top this moment, utilize the mode of contraposition, exposure and development again, hold the fluid cavity 280 of ink in order to formation.
Embodiment 3
Below utilize Fig. 5 A to Fig. 5 C that the layout profile and preparation method thereof of the 3rd embodiment of the little drop ink discharge device of the present invention is described.See also Fig. 5 A, provide in the substrate 200, for example silicon base.Then, with chemical vapour deposition technique (CVD) dielectric layer 220, silicon oxide layer for example, thickness range 1500~2000 dusts () are to cover the surface of silicon base 200.Then, with physical vaporous deposition (PVD), for example evaporation, sputtering method or reactive sputtering method, deposit patterned resistive layer 230, for example HfB 2, TaAl, TaN or other resistance materials.Then, with physical vaporous deposition (PVD) deposit patterned conductive layer 240, for example Al, Cu, AlCu or other conductor materials obtain signal transmission component.Then, deposition is used for completely cutting off the protective layer 250 of ink and heating element heater 230.The material of protective layer 250 is that silicon monoxide, silicon nitride, carborundum or its composite stack form, and more can deposit shock proof metal level on protective layer 250, to increase the service life of device.Then, utilize etching, mechanical lapping or cmp (CMP) processing procedure to remove part substrate 200 bottoms, make its thickness attenuation.
See also Fig. 5 B; on protective layer 250; with the roll extrusion mode thick film 270 that is covered; preferred photosensitive polymer material; pi (polyimide) for example; epoxy resin (epoxy resin); GMA (glycidyl methacrylate); acrylic resin (acrylic resin); acrylic or methacrylic acid esters phenolic resin varnish (an acrylate or a methacrylate of a novolakepoxy resin); polysulfones (polysulfones); polyphenylene (polyphenylenes); polyether sulfone (polyethersulfones); polyamide-imides (polyamide-imides; PAI); poly (arylene ether) (polyaryleneethers; PAE); polyphenylene sulfides (polyphenylene sulfides); polyarylene ether ketone (polyarylene ether ketones); phenoxy resin (phenoxy resins); polycarbonate resin (polycarbonates); polyethers-acid imide (polyether imides); polyquinoxaline (polyquinoxalines); poly quinoline (polyquinolines); polybenzimidazoles (polybenzimidazoles); polybenzoxazole (polybenzoxazoles); polybenzothiozole (polybenzothiazoles) polyoxadiazole materials such as (polyoxadiazoles) is in substrate 200 surfaces.Dry film 270 will be suspended from above-mentioned perforation 260b top this moment, utilize the mode of contraposition, exposure and development again, hold the fluid cavity 280 of ink in order to formation.
See also Fig. 5 C, utilize photoresistance coating, exposure and step of developing, definition spray orifice position (not shown) in substrate.Utilize the deep silicon etch technology again; for example electric paste etching, wet etching, chemical gas etching or Laser Processing processing procedure; protective layer 250, conductive layer 240 and silicon base 200 are carried out etching, and to form the perforation 260b that runs through substrate on the spray orifice position, this perforation 260b promptly becomes the spray orifice in the device.
Fig. 6 is the allocation plan of wafer through cutting, encapsulating and assemble that shows that little drop ink discharge device of the present invention is finished.See also Fig. 6, the substrate of finishing 200 is through cutting, manifold making and stick spray nozzle sheet 500, promptly finishes the making of little drop ink discharge device.Above-mentioned spray nozzle sheet 500 comprises electroplates two kinds of sheet and flexible circuit boards.
According to preferred implementation of the present invention, can utilize coil type wafer package (TCP) or wafer-soft board to engage (COF) technology and carry out encapsulation step, with the wafer 600 direct hot pressing of having cut or utilize anisotropic conducting rubber hot pressing on flexible circuit board 500.Flexible circuit board 500 promptly utilizes to dash before the encapsulation action and cuts or etching mode making perforate 510, and after wafer 600 and flexible circuit board 500 hot pressing while or heating, it is fixing to utilize adhesive glue that flexible circuit board 500 and dry film 270 are fitted, and the perforate 510 on this flexible circuit board 500 is promptly as providing one to enter the manifold of fluid cavity.
Fig. 7 is the layout profile that shows the little drop ink discharge device of the present invention.Little drop ink discharge device of the present invention as shown in Figure 7 comprises substrate 200, for example silicon base.Insulating barrier 220, silicon oxide layer for example, thickness range 1500~2000 dusts () are to cover the surface of silicon base 200.A plurality of heaters 230 are formed on the insulating barrier 220, comprise primary heater and secondary heater.Patterned conductive layer 240 covers on above-mentioned heater 230 and the insulating barrier 220, as signal transmission component.Protective layer 250 covers on conductive layer 240 and the insulating barrier 220, with isolated conductive layer 240.Patterned thick film 270 is formed on the protective layer 250, and wherein definition has fluid cavity 280.Flexible circuit board 500 is formed on the patterned thick film 270, comprises the perforate 510 that is communicated with this fluid cavity 280, and wherein this flexible circuit board is in order to transmit the signal of telecommunication.And spray orifice 260b, be positioned at this substrate 200, in order to spray the spray orifice 260b that leaves as liquid pearl 450.
This pattern characteristics and effect
Feature of the present invention and effect are to utilize deep silicon etch and lapping mode to make the method for little drop ink discharge device, this little drop ink discharge device can directly form jet orifice by little shadow and etching step on silicon base, can improve the accuracy of spray orifice and dwindle jetting fluid bead footpath.
In addition, because heating component in the upper limb of fluid cavity, prevents that satellite liquid pearl from generating and minimizing flow-disturbing effect so can use two bubble mechanism effectively to reach, increase the function of spraying resolution.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, for those of ordinary skills, and without departing from the spirit and scope of the present invention; when can doing to change and retouching, so protection scope of the present invention should be looked appended the claim person of defining and is as the criterion.

Claims (26)

1. the manufacture method of a fluid ejection apparatus comprises the following steps:
Substrate is provided;
Form at least one heater in this substrate;
Form patterned conductive layer in this heater and this substrate;
Form protective layer and cover in this conductive layer and this substrate, with isolated this conductive layer;
This protective layer of etching and this substrate are to form opening successively;
Form patterned thick film on this protective layer, wherein definition has fluid cavity; And
Remove this substrate of part bottom, making the thickness of this substrate be thinned to this opening becomes the spray orifice that runs through this substrate.
2. the manufacture method of fluid ejection apparatus as claimed in claim 1, the step that wherein also comprises: form insulating barrier between this substrate and this heater.
3. the manufacture method of fluid ejection apparatus as claimed in claim 1, the step that wherein forms this opening are to adopt any method in electric paste etching, wet etching, chemical gas etching and the Laser Processing processing procedure to finish.
4. the manufacture method of fluid ejection apparatus as claimed in claim 1, wherein this patterned thick film is the photosensitive polymer material.
5. the manufacture method of fluid ejection apparatus as claimed in claim 4, wherein this photosensitive polymer material is to be selected from pi, epoxy resin, GMA, acrylic resin, acrylic or methacrylic acid phenolic resin varnish, polysulfones, polyphenylene, polyether sulfone, polyamide-imides, poly (arylene ether), polyphenylene sulfides, polyarylene ether ketone, phenoxy resin, polycarbonate resin, polyethers-acid imide, polyquinoxaline, poly quinoline, polybenzimidazoles, polybenzoxazole, polybenzothiozole, and polyoxadiazole constitutes in the group any.
6. the manufacture method of fluid ejection apparatus as claimed in claim 1, this step that wherein removes the substrate bottom is to finish in any mode in etching, mechanical lapping and the cmp mode.
7. the manufacture method of fluid ejection apparatus as claimed in claim 1, the step that wherein also comprises: engage this substrate in flexible circuit board, to form this fluid ejection apparatus.
8. the manufacture method of fluid ejection apparatus as claimed in claim 7, wherein this flexible circuit board further comprises the perforate that is communicated with this fluid cavity.
9. the manufacture method of fluid ejection apparatus as claimed in claim 7, wherein this engagement step is to finish with in coil type wafer package and the wafer-soft board juncture any.
10. the manufacture method of a fluid ejection apparatus comprises the following steps:
Substrate is provided;
Form insulating barrier in this substrate;
Form at least one heater on this insulating barrier;
Forming patterned conductive layer covers on this heater and this insulating barrier;
Form protective layer and cover on this conductive layer and this insulating barrier, with isolated this conductive layer;
Remove this substrate bottom of part, make the thickness attenuation of this substrate;
This protective layer of etching, this insulating barrier and this substrate run through the spray orifice of this substrate with formation successively; And
Form patterned thick film on this protective layer, wherein definition has fluid cavity.
11. the manufacture method of fluid ejection apparatus as claimed in claim 10, the step that wherein also comprises: form insulating barrier between this substrate and this heater.
12. the manufacture method of fluid ejection apparatus as claimed in claim 10, wherein form patterned thick film in this step on the protective layer be place this step that forms the spray orifice run through substrate before.
13. the manufacture method of fluid ejection apparatus as claimed in claim 10, this step that wherein removes part substrate bottom is to finish in any mode in etching, mechanical lapping and the cmp mode.
14. the manufacture method of fluid ejection apparatus as claimed in claim 10, the step that wherein forms the spray orifice that runs through this substrate are to adopt any method in electric paste etching, wet etching, chemical gas etching and the Laser Processing processing procedure to finish.
15. the manufacture method of fluid ejection apparatus as claimed in claim 10, wherein this patterned thick film is the photosensitive polymer material.
16. the manufacture method of fluid ejection apparatus as claimed in claim 15, wherein this photosensitive polymer material is to be selected from pi, epoxy resin, GMA, acrylic resin, acrylic or methacrylic acid phenolic resin varnish, polysulfones, polyphenylene, polyether sulfone, polyamide-imides, poly (arylene ether), polyphenylene sulfides, polyarylene ether ketone, phenoxy resin, polycarbonate resin, polyethers-acid imide, polyquinoxaline, poly quinoline, polybenzimidazoles, polybenzoxazole, polybenzothiozole and polyoxadiazole constitute any in the group.
17. the manufacture method of fluid ejection apparatus as claimed in claim 10, the step that wherein also comprises: engage this substrate in flexible circuit board, to form this fluid ejection apparatus.
18. the manufacture method of fluid ejection apparatus as claimed in claim 17, wherein this flexible circuit board further comprises the perforate that is communicated with this fluid cavity.
19. the manufacture method of fluid ejection apparatus as claimed in claim 17, wherein this engagement step is to finish with in coil type wafer package and the wafer-soft board juncture any.
20. a fluid ejection apparatus comprises:
Substrate;
Heater is formed in this substrate;
Patterned conductive layer covers in this heater and this substrate;
Protective layer covers in this conductive layer and this substrate, with isolated this conductive layer;
Patterned thick film is formed in this substrate, and wherein definition has fluid cavity; And
Spray orifice is positioned at this substrate, in order to spray the spray orifice that leaves as fluid.
21. fluid ejection apparatus as claimed in claim 20 wherein also comprises insulating barrier, is formed between this substrate and this heater.
22. fluid ejection apparatus as claimed in claim 21, wherein the material of this insulating barrier is a silicon monoxide.
23. fluid ejection apparatus as claimed in claim 20, wherein this protective layer is to be piled up by silicon monoxide, silicon nitride, carborundum or its composite to form.
24. fluid ejection apparatus as claimed in claim 20, wherein this patterned thick film is the photosensitive polymer material.
25. fluid ejection apparatus as claimed in claim 24, wherein this photosensitive polymer material is to be selected from pi, epoxy resin, GMA, acrylic resin, acrylic or methacrylic acid phenolic resin varnish, polysulfones, polyphenylene, polyether sulfone, polyamide-imides, poly (arylene ether), polyphenylene sulfides, polyarylene ether ketone, phenoxy resin, polycarbonate resin, polyethers-acid imide, polyquinoxaline, poly quinoline, polybenzimidazoles, polybenzoxazole, polybenzothiozole and polyoxadiazole constitute any in the group.
26. fluid ejection apparatus as claimed in claim 20 wherein also comprises flexible circuit board, is formed on this patterned thick film, comprises the perforate that is communicated with this fluid cavity, wherein this flexible circuit board is in order to transmit the signal of telecommunication.
CN 03154029 2003-08-14 2003-08-14 Fluid injection device and its manufacturing method Pending CN1579779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 03154029 CN1579779A (en) 2003-08-14 2003-08-14 Fluid injection device and its manufacturing method

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Application Number Priority Date Filing Date Title
CN 03154029 CN1579779A (en) 2003-08-14 2003-08-14 Fluid injection device and its manufacturing method

Publications (1)

Publication Number Publication Date
CN1579779A true CN1579779A (en) 2005-02-16

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Country Link
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