TW594391B - Chemical amplified type positive resist composition for liquid crystal element - Google Patents
Chemical amplified type positive resist composition for liquid crystal element Download PDFInfo
- Publication number
- TW594391B TW594391B TW091116898A TW91116898A TW594391B TW 594391 B TW594391 B TW 594391B TW 091116898 A TW091116898 A TW 091116898A TW 91116898 A TW91116898 A TW 91116898A TW 594391 B TW594391 B TW 594391B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid crystal
- mass
- component
- crystal element
- parts
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001238039A JP4554122B2 (ja) | 2001-08-06 | 2001-08-06 | 化学増幅型ポジ型液晶素子用レジスト組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW594391B true TW594391B (en) | 2004-06-21 |
Family
ID=19069026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091116898A TW594391B (en) | 2001-08-06 | 2002-07-29 | Chemical amplified type positive resist composition for liquid crystal element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4554122B2 (ja) |
KR (1) | KR100585301B1 (ja) |
TW (1) | TW594391B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8420520B2 (en) | 2006-05-18 | 2013-04-16 | Megica Corporation | Non-cyanide gold electroplating for fine-line gold traces and gold pads |
TWI460536B (zh) * | 2007-04-02 | 2014-11-11 | Samsung Display Co Ltd | 光阻組合物及使用其形成光阻圖案之方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4759895B2 (ja) * | 2001-09-20 | 2011-08-31 | 住友ベークライト株式会社 | フォトレジスト用樹脂およびフォトレジスト組成物 |
TWI282907B (en) * | 2003-05-20 | 2007-06-21 | Tokyo Ohka Kogyo Co Ltd | Chemical amplification type positive photoresist composition and resist pattern forming method using the same |
KR20050054954A (ko) * | 2003-05-22 | 2005-06-10 | 도오꾜오까고오교 가부시끼가이샤 | 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴 형성방법 |
JP2005010213A (ja) * | 2003-06-16 | 2005-01-13 | Tokyo Ohka Kogyo Co Ltd | 化学増幅型ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
JP4355591B2 (ja) * | 2004-02-23 | 2009-11-04 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
WO2006046398A1 (ja) * | 2004-10-29 | 2006-05-04 | Nissan Chemical Industries, Ltd. | 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター |
US8715918B2 (en) | 2007-09-25 | 2014-05-06 | Az Electronic Materials Usa Corp. | Thick film resists |
US11385543B2 (en) | 2016-08-09 | 2022-07-12 | Merck Patent Gmbh | Enviromentally stable, thick film, chemically amplified resist |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0536690B1 (en) * | 1991-10-07 | 1998-09-09 | Fuji Photo Film Co., Ltd. | Light-sensitive composition |
JPH07140661A (ja) * | 1993-06-18 | 1995-06-02 | Hitachi Chem Co Ltd | 感光性樹脂組成物およびレジスト像の製造法 |
JPH0894829A (ja) * | 1994-09-28 | 1996-04-12 | Kansai Paint Co Ltd | カラーフィルタの製法 |
JP3518158B2 (ja) * | 1996-04-02 | 2004-04-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
JPH10133379A (ja) * | 1996-08-27 | 1998-05-22 | Hitachi Chem Co Ltd | ポジ型化学増幅系感光性樹脂組成物及びレジスト像の製造法 |
US6284427B1 (en) * | 1997-09-22 | 2001-09-04 | Clariant Finance (Bvi) Limited | Process for preparing resists |
JP4068260B2 (ja) * | 1999-04-02 | 2008-03-26 | Azエレクトロニックマテリアルズ株式会社 | 感放射線性樹脂組成物 |
JP3903638B2 (ja) * | 1999-04-12 | 2007-04-11 | 株式会社日立製作所 | パタン形成方法 |
KR100421034B1 (ko) * | 1999-04-21 | 2004-03-04 | 삼성전자주식회사 | 레지스트 조성물과 이를 이용한 미세패턴 형성방법 |
-
2001
- 2001-08-06 JP JP2001238039A patent/JP4554122B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-29 TW TW091116898A patent/TW594391B/zh not_active IP Right Cessation
- 2002-08-05 KR KR1020020046088A patent/KR100585301B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8420520B2 (en) | 2006-05-18 | 2013-04-16 | Megica Corporation | Non-cyanide gold electroplating for fine-line gold traces and gold pads |
TWI460536B (zh) * | 2007-04-02 | 2014-11-11 | Samsung Display Co Ltd | 光阻組合物及使用其形成光阻圖案之方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2003050460A (ja) | 2003-02-21 |
KR100585301B1 (ko) | 2006-06-01 |
KR20030035831A (ko) | 2003-05-09 |
JP4554122B2 (ja) | 2010-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI417682B (zh) | 微細化圖案之形成方法及用於它之光阻基板處理液 | |
JP4699482B2 (ja) | ポジティブ型ドライフィルムフォトレジストの製造方法 | |
JPH03155554A (ja) | 放射線感応性樹脂組成物 | |
US20070248913A1 (en) | Process for producing film forming resins for photoresist compositions | |
TWI338193B (en) | Positive resist composition and method for forming resist pattern | |
TW594391B (en) | Chemical amplified type positive resist composition for liquid crystal element | |
TWI326804B (en) | Use of n-phenyl-2h-benzptriazole compound for improving adhesion of photosensitive resin compound to substrate | |
KR101363738B1 (ko) | 포토레지스트 조성물 및 이의 패턴 형성 방법 | |
JPH07333840A (ja) | ポジ型ホトレジスト組成物 | |
JPH04130324A (ja) | ポジ型レジスト組成物 | |
JP2001312060A (ja) | ポジ型ホトレジスト組成物、感光性膜付基板およびレジストパターンの形成方法 | |
JP2010102342A (ja) | フォトレジスト組成物 | |
EP1877865B1 (en) | Nanocomposite photoresist composition for imaging thick films | |
JP4053402B2 (ja) | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 | |
JP2000171968A (ja) | ポジ型フォトレジスト組成物 | |
JP3787323B2 (ja) | ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材 | |
TWI287173B (en) | Positive photoresist composition for manufacturing substrate and method for forming resist pattern | |
JPH05204158A (ja) | 感放射線性樹脂組成物 | |
JP3209754B2 (ja) | 感放射線性樹脂組成物 | |
JP3577442B2 (ja) | ポジ型ホトレジスト組成物、感光性膜付基板、レジストパターンの形成方法およびポジ型ホトレジスト組成物の製造方法 | |
JP2000258901A (ja) | 感放射線性樹脂組成物 | |
JP2001312052A (ja) | ポジ型ホトレジスト組成物、感光性膜付基板およびレジストパターンの形成方法 | |
JP3633134B2 (ja) | 感放射線性樹脂組成物 | |
JPH09166876A (ja) | 中間膜組成物及びこれを用いた基板上への感光膜の形成方法 | |
JPH07104467A (ja) | ポジ型レジスト組成物及びパターン形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |