TW594391B - Chemical amplified type positive resist composition for liquid crystal element - Google Patents

Chemical amplified type positive resist composition for liquid crystal element Download PDF

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Publication number
TW594391B
TW594391B TW091116898A TW91116898A TW594391B TW 594391 B TW594391 B TW 594391B TW 091116898 A TW091116898 A TW 091116898A TW 91116898 A TW91116898 A TW 91116898A TW 594391 B TW594391 B TW 594391B
Authority
TW
Taiwan
Prior art keywords
liquid crystal
mass
component
crystal element
parts
Prior art date
Application number
TW091116898A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuyuki Nitta
Tetsuya Kato
Tomosaburo Aoki
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of TW594391B publication Critical patent/TW594391B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW091116898A 2001-08-06 2002-07-29 Chemical amplified type positive resist composition for liquid crystal element TW594391B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001238039A JP4554122B2 (ja) 2001-08-06 2001-08-06 化学増幅型ポジ型液晶素子用レジスト組成物

Publications (1)

Publication Number Publication Date
TW594391B true TW594391B (en) 2004-06-21

Family

ID=19069026

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091116898A TW594391B (en) 2001-08-06 2002-07-29 Chemical amplified type positive resist composition for liquid crystal element

Country Status (3)

Country Link
JP (1) JP4554122B2 (ja)
KR (1) KR100585301B1 (ja)
TW (1) TW594391B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8420520B2 (en) 2006-05-18 2013-04-16 Megica Corporation Non-cyanide gold electroplating for fine-line gold traces and gold pads
TWI460536B (zh) * 2007-04-02 2014-11-11 Samsung Display Co Ltd 光阻組合物及使用其形成光阻圖案之方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759895B2 (ja) * 2001-09-20 2011-08-31 住友ベークライト株式会社 フォトレジスト用樹脂およびフォトレジスト組成物
TWI282907B (en) * 2003-05-20 2007-06-21 Tokyo Ohka Kogyo Co Ltd Chemical amplification type positive photoresist composition and resist pattern forming method using the same
KR20050054954A (ko) * 2003-05-22 2005-06-10 도오꾜오까고오교 가부시끼가이샤 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴 형성방법
JP2005010213A (ja) * 2003-06-16 2005-01-13 Tokyo Ohka Kogyo Co Ltd 化学増幅型ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP4355591B2 (ja) * 2004-02-23 2009-11-04 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
WO2006046398A1 (ja) * 2004-10-29 2006-05-04 Nissan Chemical Industries, Ltd. 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター
US8715918B2 (en) 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
US11385543B2 (en) 2016-08-09 2022-07-12 Merck Patent Gmbh Enviromentally stable, thick film, chemically amplified resist

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0536690B1 (en) * 1991-10-07 1998-09-09 Fuji Photo Film Co., Ltd. Light-sensitive composition
JPH07140661A (ja) * 1993-06-18 1995-06-02 Hitachi Chem Co Ltd 感光性樹脂組成物およびレジスト像の製造法
JPH0894829A (ja) * 1994-09-28 1996-04-12 Kansai Paint Co Ltd カラーフィルタの製法
JP3518158B2 (ja) * 1996-04-02 2004-04-12 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JPH10133379A (ja) * 1996-08-27 1998-05-22 Hitachi Chem Co Ltd ポジ型化学増幅系感光性樹脂組成物及びレジスト像の製造法
US6284427B1 (en) * 1997-09-22 2001-09-04 Clariant Finance (Bvi) Limited Process for preparing resists
JP4068260B2 (ja) * 1999-04-02 2008-03-26 Ａｚエレクトロニックマテリアルズ株式会社 感放射線性樹脂組成物
JP3903638B2 (ja) * 1999-04-12 2007-04-11 株式会社日立製作所 パタン形成方法
KR100421034B1 (ko) * 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8420520B2 (en) 2006-05-18 2013-04-16 Megica Corporation Non-cyanide gold electroplating for fine-line gold traces and gold pads
TWI460536B (zh) * 2007-04-02 2014-11-11 Samsung Display Co Ltd 光阻組合物及使用其形成光阻圖案之方法

Also Published As

Publication number Publication date
JP2003050460A (ja) 2003-02-21
KR100585301B1 (ko) 2006-06-01
KR20030035831A (ko) 2003-05-09
JP4554122B2 (ja) 2010-09-29

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