TW593723B - Sputtering target and method for producing the target - Google Patents

Sputtering target and method for producing the target Download PDF

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Publication number
TW593723B
TW593723B TW091118275A TW91118275A TW593723B TW 593723 B TW593723 B TW 593723B TW 091118275 A TW091118275 A TW 091118275A TW 91118275 A TW91118275 A TW 91118275A TW 593723 B TW593723 B TW 593723B
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Taiwan
Prior art keywords
laser
target
sputtering target
surface treatment
manufacturing
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TW091118275A
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Chinese (zh)
Inventor
Hiroshi Watanabe
Seiichiro Takahashi
Takashi Yamazaki
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Mitsui Mining & Smelting Co
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Priority claimed from JP2001247307A external-priority patent/JP3398369B2/en
Priority claimed from JP2001260781A external-priority patent/JP3398370B2/en
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Application granted granted Critical
Publication of TW593723B publication Critical patent/TW593723B/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Nonlinear Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An object of the invention is to provide a sputtering target which prevents initial arc discharge, remarkably enhances initial sputtering stability, and can be produced at low cost. Another object of the invention is to provide a method for producing the target. Through surface treatment by use of a laser beam having a pulse width of 100 musec or less, burr and grinding dust produced during working such as grinding, as well as dust and dirt, can be conceivably removed due to sublimation or a similar process. Therefore, initial arc discharge to be observed at an initial stage of use of the sputtering target can be remarkably reduced, thereby enhancing initial sputtering stability.

Description

593723 五、發明說明（1) j支術領域 本發明係一種濺鍍靶（Sputtering Target)及其製造方 法。 八乂 _習知之技術 作為薄膜的成膜方法之—，錢法—般是已知的。㈣ Ϊ是在賴乾上進行誠得到薄膜的方法，由於能夠以比 李父好的效率成膜，在工業上得到廣泛的應用。 特別是氧化銦-氧化錫（in2〇3-Sn〇2複合氧化物，以 之為’’ITO”）膜，由於其對可見光的透過率高，而且導電性 好，作為透明的導電膜廣泛地用於液晶顯示裝置和防止玻 璃結露用發熱膜、紅外線反射膜等方面。 因此，為了以更好的效率、更低的成本成膜，現在在濺 鍍條件和濺鍍裝置等方面日益進行了改進，如何更有效地 進行操作成為很重要的任務。 ^ 在這樣的ITO濺鍍當中，從設置新的濺鍍靶到能夠梦造 沒有初期電弧（異常放電）的製品之間的時間較短，並&且役 置一次能夠使用多少時間（累計濺鍍時間：革巴壽命）呢，2 其中都存在問題。 11 么目前，濺鍍靶的初期電弧要通過將靶的表面研磨得儘可 能平滑予以降低，將表面進行平滑地表面研磨的乾成為主 流。 ”、' 另外’如果連續地進行濺鍍，在靶的表面上會生成黑色 的瘤狀附著物’這就是異常放電的原因，成為^粒的^生 源。因此’為了防止薄膜的缺陷，有必要定期地除去4狀593723 V. Description of the invention (1) The field of j-branch surgery The present invention relates to a sputtering target and a manufacturing method thereof. Hachiman _Knowledged Technology As one of the film-forming methods, the money method is generally known. ㈣ Ϊ is a method of obtaining thin films on Lai Gan. Since it can form films with better efficiency than Li's father, it has been widely used in industry. In particular, indium oxide-tin oxide (in2〇3-Sn〇2 composite oxide, referred to as "ITO") film, is widely used as a transparent conductive film because of its high transmittance to visible light and good conductivity. It is used in liquid crystal display devices, heating films for preventing condensation of glass, infrared reflective films, etc. Therefore, in order to form films with better efficiency and lower cost, sputtering conditions and sputtering devices have been improved. How to operate more efficiently becomes an important task. ^ In such ITO sputtering, the time between setting a new sputtering target and being able to dream of a product without an initial arc (abnormal discharge) is short, and & How much time can be used at one time (cumulative sputtering time: Geba life), 2 both of which have problems. 11 At present, the initial arc of a sputtering target must be polished by polishing the surface of the target as smooth as possible. Lowering, and smoothing the surface of the surface becomes mainstream. "、" In addition, if continuous sputtering is performed, black nodular deposits will be formed on the surface of the target ". It is the cause of abnormal discharge and becomes a source of energy. Therefore, in order to prevent film defects, it is necessary to remove the

:、91118275.ptd 第5頁 593723 五、發明說明（2) 物，這樣就涉及到生產率低下的問題。 於是，對防止發生瘤狀物的I T 0濺鍍靶進行了研究 [發明所欲解決的課題] 可是，為了防止瘤狀物，要使用具有指定的表面粗 的I T 0濺鍍靶，但不能防止初期電弧就成了問題。因 ^度 由於設置一個新的濺艘革巴之後必須進行長時間的处 ^ ^ 1¾ ιέ 這就成了提高生產率的障礙。 ^ 5 為了製造具有如上所述指定的粗糙度之I TO濺錄革巴， 燒結和經研削調整厚度以後，需要慢慢地用細研磨磨石在 行3〜4次的研磨步驟，存在延長製造時間和提高成本的問 題0 這樣的問題在I TO以外的陶瓷系或者金屬系的濺鍍靶上. 也是同樣的。 鑒於，，ί發明的目的在於提供一種防止發生初期電 ，、顯著提高初期穩定性、而且能濺鍍 靶及其製造方法。 衣 [解決課題之手段] 占=f人發現，作為初期電弧的原因，在研磨加工時生 西，可 杨末疋主要原因，由研磨產生的這些東 有效地=ί由指定寬度的脈衝輸出的雷射進行表面處理來 的認識=成;，此就完成了本發明。這就是說’基於如下 在滅“始時由：：子：:°果用雷射進行表面處理’會使 熱衝擊而滑落離子肢在耙表面上產生熱衝擊時，由此 月'1革巴表面上的粉末以及貝殻狀的裂紋，在濺: 、 91118275.ptd Page 5 593723 5. Description of the invention (2), which involves the problem of low productivity. Therefore, research was conducted on IT 0 sputtering targets for preventing the occurrence of nodules [Problems to be Solved by the Invention] However, in order to prevent nodules, it is necessary to use IT 0 sputtering targets having a specified surface roughness, but this cannot be prevented. The initial arc was a problem. Because of the ^ degree Because a new splash boat must be installed for a long time ^ ^ 1¾ ιι This becomes an obstacle to improve productivity. ^ 5 In order to produce I TO sputtered leather with the specified roughness as described above, after sintering and grinding to adjust the thickness, it is necessary to slowly use a fine grinding stone for 3 to 4 grinding steps. There is an extended manufacturing Questions about time and cost increase 0 The same problem applies to ceramic or metal sputtering targets other than I TO. In view of this, the object of the invention is to provide a target that prevents the occurrence of initial electricity, significantly improves initial stability, and can be sputtered, and a method for manufacturing the same. Clothing [means for solving the problem] Zhan = f people found that as the cause of the initial arc, the main reason for Yang Xi during the grinding process was that Yang Mori was the main cause of the grinding. These produced by the grinding are effectively = 输出 output by a pulse of a specified width The recognition that the surface treatment of the laser = Cheng; this completes the present invention. This means that 'based on the following's beginning at the beginning of the "by :: 子 :: ° fruit surface treatment with laser' will cause thermal shock and slide off when the ion limb generates thermal shock on the surface of the harrow, and this month '1 Geba Powder and shell-like cracks on the surface, splashing

A:\91118275.ptd $ 6頁 593723 五、發明說明（3) 鑛開始前已 滑落。 本發明的 為 100 /xsec 在本發明 雷射進行表 粉末，特別 地降低開始 性。由於使 射產生的能 化物的情況 本發明的 中的上述雷 在第2態；f 進行了表面 是粉塵和塵 本發明的 態樣中的上 在第3態才 理，因昇華 末，特別是 本發明的 3態樣中任-在第4態稍 經升華了’而由濟辦： 戈鍍開始後的熱衝擊不會造成 第1態樣是一種濺鍍靶，置 以下的脈衝輪出的雷射行由寬度 的第1態樣中，通過由指定仃Λ理： 面處理，使在研削加卫時所m衝輪出的 是粉塵塵埃經昇華而被除去，因此研削 用了：指定寬度的脈彳r輸出 ΐ不=層擴散，不會產生變質部以:， 下，為還原（低級氧化物）部分（在氣 m是—種濺鍍靶，其特徵在於，第卜 射，其輸出脈衝的峰值能量為㈣感樣 表中，由於用指定的峰值能量脈 上: f ;、’，研削時產生的毛刺和研削粉末，射 埃4被昇華而除去。 特別 第3態樣是一種濺鍍靶，其特徵在於 述Μ射的波長為1 /z m以下。 或2 匕本由波長h 1㈣下的雷射進行表面卢 =去了在研削加卫時產生的毛刺^ 粉塵和塵埃。· 巧削粉 第^態樣是一種濺鍍靶，其特徵在於 恕樣，上述雷射是YAG雷射或激元雷射。弟1〜 ^中，通過YAG雷射或激元雷射有效 ^订了矣 3 3A: \ 91118275.ptd $ 6 pages 593723 5. Description of the invention (3) The mine has slipped before the start. The powder of the present invention is 100 / xsec in the present invention, and the powder is particularly excellent in reducing the startability. In the case of the energetic material generated by the injection, the above-mentioned lightning in the present invention is in the second state; f has been subjected to dust and dust in the state of the present invention in the third state, because of the sublimation, especially Any of the three aspects of the present invention-a little sublimation in the fourth aspect, and it is done: thermal shock after the start of the plating will not cause the first aspect to be a sputtering target. In the first aspect of the laser beam width, by designating the 仃 Λ mechanism: surface treatment, the dust produced by the m-pulse wheel during grinding and guarding is sublimated and removed, so the grinding is used for the specified width: The output of the pulse 彳 r does not = layer diffusion, and no deterioration will occur. The lower part is the reduced (lower oxide) part (in the gas m is a kind of sputtering target, which is characterized by the first shot and its output The peak energy of the pulse is shown in the sample table. Because of the specified peak energy pulses: f;, ', the burr and grinding powder generated during grinding, the ejection 4 is sublimated and removed. In particular, the third aspect is a splash. The plating target is characterized in that the wavelength of the M emission is 1 / zm or less. The surface of the laser at the wavelength h 1 = is removed. The burrs generated during the grinding of the guard ^ dust and dust are removed. The cleverly-pulverized powder is a sputter target, which is characterized by the above. The laser is YAG laser or excimer laser. Younger 1 ~ ^, effective through YAG laser or excimer laser ^ 订 3 3

五、發明說明（4) 面處理，提高了初期穩定性。 本發明的第5態樣是一種濺鍍靶，其特徵在於， 4態樣中任一態樣，濺鍍靶是由陶瓷製造的。、在第1〜 在第5態樣中’除去陶瓷研削加工時生 粉末。 才生成的毛刺和研削 本發明的第6態樣是一種濺鍍靶，其特徵在於 樣中，濺鍍靶是由含有氧化銦和氧化錫中在弟5悲 化物製造的。 種的氧 f第6態樣中’顯著提高了ITQ濺鍍乾的初期 本發明的第7態樣是一種賤錢革巴，其特徵在於，:生 狀的加工痕跡被降低。 ，、且線 由ίΓΛΥ ’通㈣低直線狀加卫痕跡那樣的處理， 是：研！加：時所生成的毛刺和研削粉末，特別 ”塵和塵埃’因此能夠顯著地降低開始使 = 初功電弧，提高了初期穩定性。 才么生的 本發明的第8態樣是一種濺鍍靶，苴 樣中，用500倍的電子掃描 ^ Μ特斂在於，在第7態 直線狀加工# m+ ^ r、兄（SEM)硯察到的靶表面的 的範，内為1〇"條以下^ i加工痕跡垂直的方向上的240 電子ΐ8描^中鏡加工痕跡的處理，使得用5 00倍 跡’在與該2 = 表面的直線狀加工痕 以下。 向上的2 4 0 # m的範圍内為1 〇條 本發明的苐9態樣是一 楂濺鍍靶，其特徵在於，在第7或 5937235. Description of the invention (4) Surface treatment improves initial stability. A fifth aspect of the present invention is a sputtering target characterized in that, in any of the four aspects, the sputtering target is made of ceramic. In the first to fifth aspects, 'the raw powder is removed during the ceramic grinding process.' Burrs and Grinding Just Generated A sixth aspect of the present invention is a sputtering target, which is characterized in that the sputtering target is made of a compound containing indium oxide and tin oxide. In the sixth aspect of the oxygen f of the species, the initial stage of ITQ sputter drying is significantly increased. The seventh aspect of the present invention is a cheap money leather, which is characterized by reduced raw processing marks. , And the line is treated by ΓΓΛΥ ’㈣ ㈣ low linear guard mark, is: research! Plus: The burr and grinding powder generated at the time, especially "dust and dust" can significantly reduce the initial start = initial work arc and improve the initial stability. The eighth aspect of the present invention is a sputter plating In the target sample, 500 times of electron scanning ^ M is particularly conspicuous, in the 7th state, the range of the target surface observed by linear processing # m + ^ r, brother (SEM), within 10 " The following ^ i processing traces in the vertical direction of 240 electrons ΐ 8 processing ^ processing of the mirror processing traces, so that 5000 times the trace 'below the straight processing traces with the 2 = surface. Upward 2 4 0 # m Within the range of 10, the 苐 9 aspect of the present invention is a hawthorn sputtering target, which is characterized in that at the 7th or 593723

由寬度為1 00 # sec以下的脈衝輪出的雷射進行 五、發明說明（5) 8態樣中， 表面處理 在第9態樣中’由於使用了指定寬度的脈衝輸出的泰 射’由雷射產生的能量不向深度方向擴散，不合產生胃㈣ 的部分（在氧化物的情況下，為還原（低級氧化:）部分1質 本發明的第10態樣是一種濺鍍靶’其特徵在於，在J ° 〜9態樣中任一態樣，採用峰值能量為3MW/cm2以上的 輸出的雷射進行表面處理。 在第10態樣中’能夠以指定的峰值能量的脈衝輸出 射進行有效地表面處理。 、雷 本發明的第11態樣是一種濺鍍靶，其特徵在於，在 〜1 0悲樣中任一怨樣，由波長為1 · 1 # m以下的雷射一 面處理。 仃表 在第11悲、樣中，能夠以波長為1 · 1 # m以下的具有指& 波長的雷射進行有效的表面處理。 9疋的 本發明的第1 2態樣是一種濺鍍靶，其特徵在於，在 〜11態樣中任一態樣，靶是由陶瓷製造的。 在第1 2悲樣中，除去陶瓷在研削加工時所生成的 研削粉末。 利和 本發明的第1 3態樣是一種濺鍍靶，其特徵在於，在第1 恶樣中，靶是由含有氧化銦和氧化錫中至少一個的 製造的。 乳化物 在第1 3態樣中，顯著地提高了丨τ 〇濺鍍靶的初期穩定 性0The laser is emitted from a pulse wheel with a width of less than 1 00 # sec. 5. Description of the invention (5) In the eighth aspect, the surface treatment in the ninth aspect is 'Thai shot due to the use of a pulse output with a specified width'. The energy generated by the laser does not diffuse in the depth direction, and it is not suitable for the part that causes gastric irritation (in the case of oxides, it is a reduction (low-level oxidation :) part 1) The tenth aspect of the present invention is a sputtering target. Its characteristics That is, in any of the J ° to 9 aspects, surface treatment is performed with a laser having an output with a peak energy of 3 MW / cm2 or more. In the 10th aspect, 'can be performed with a pulse output of a specified peak energy Effective surface treatment. The eleventh aspect of the present invention is a sputtering target, which is characterized in that any one of the ~ 10 sorrow samples is treated by a laser with a wavelength of 1 · 1 # m or less. In the eleventh aspect, the surface can be effectively surface-treated with a laser having a wavelength of & with a wavelength of 1 · 1 # m or less. The first aspect of the present invention is a type of sputtering. The plating target is characterized in that in any of the ~ 11 aspects, the target is It is made of ceramic. In the 12th sample, the grinding powder generated during the grinding process of the ceramic is removed. The 1st aspect of the invention is a sputtering target, which is characterized in that in the first evil sample, The target is made of at least one of indium oxide and tin oxide. In the 13th aspect, the emulsion significantly improves the initial stability of the sputtering target. Ττ

A:\91118275.ptd 第9頁 593723 五、發明說明（6) 本發明的第1 4態樣是一種濺鍍靶的製造方法，其特徵在 =，在濺鍍靶的製造方法中，具有由丨〇 〇从s e c以下的脈衝 I度輸出的雷射進行表面處理的步驟。 在第1 4態樣中，通過由指定寬度的脈衝輪出的雷射進行 ^ :處理，由昇華除去在研削加工時所生成的毛刺和研削 =t特別是粉塵和塵埃，因此能夠顯著地降低開始使用 :电生的初期電弧’提高了初期穩定性。而且由於使用 声古a樜必 τ a * ， 由田射產生的能量不向深 =向擴散’不會產生變質部分（在氧化物的 遏原（低級氧化物）部分）。 為 本發，的第1 5態樣是—種_革巴的製造方法， 6::在第14態樣中，上述雷射是峰值能量為3MW/C:2以'上 的脈衝輸出的雷射。 上 在第1 5態樣中，通過由於令&丨久7士 &曰 射進行表面處…昇華的脈衝輪出的雷 和研削粉末，制是：ΪΠ;研削加工時所生成的毛刺 本發明的第16態樣是—種濺鍍靶的 在於，在第1 4或1 5態樣中，i、f + Μ ' 其特徵 下。 中上述雷射的波長為Μ 以 在第1 6態樣中，通過由波長為i工 面處理，*昇華除去在研削加工時 射進行表 末，特別是粉塵和塵埃。 成的毛刺和研削粉 於 本，明的第！7態樣是—種賤鑛 ，在第1 4〜1 6態樣中任—能揭 T &方法其特徵在 恶樣，上述雷射是YAG雷射或在 593723 五、發明說明（7) 激元雷射。 在第1 7態樣中，由YAG雷射或激元雷射有效地進行表面 處理，提高了初期穩定性。 本發明的第1 8態樣是一種濺鍍靶的製造方法，其特徵在 於，在第1 4〜1 7態樣中任一態樣，在加工革巴並調整厚度 後，進行上述表面處理。 在第1 8態樣中，由於通過昇華等除去在研削加工時戶斤t 成的毛刺和研削粉末，能夠顯著地降低開始使用該乾時發 生的初期電弧，提高了初期穩定性。 本發明的第1 9態樣是一種濺鍍靶的製造方法，其特徵在 於，在第1 4〜1 8態樣中任一態樣，在製造步驟的最後階段 進行上述表面處理。 在第1 9態樣中，通過儘可能在最終階段進行雷射表面處 理，能夠有效地降低初期電弧。 本發明的第2 0態樣是一種濺鍍靶的製造方法，其特徵在 於，在第1 4〜1 9態樣中任一態樣，在將濺鍍靶與藏鍍極板 連接之後進行上述表面處理。 在第2 0態樣中，可以在與濺鍍極板連接後進行雷射表面 處理，就更有效地降低了初期電弧。 本發明的第2 1態樣是一種錢鑛把的製造方法，其特徵在 於’在第1 4〜2 0態樣中任一態樣，丨賤鍍把是由陶究製造 的。 在第2 1態樣中，除去在陶瓷研削加工時所生成的毛刺和 研削粉末。A: \ 91118275.ptd Page 9 593723 V. Description of the invention (6) The fourteenth aspect of the present invention is a method for manufacturing a sputtering target, which is characterized in that, in the method for manufacturing a sputtering target,丨 〇〇 The step of performing a surface treatment from a laser with a pulse of 1 degree output below sec. In the 14th aspect, the laser is emitted from a pulse wheel of a specified width to perform a ^: treatment, and the burr and grinding generated during the grinding process are removed by sublimation = t, especially dust and dust, so it can be significantly reduced. Getting Started: Electro-Initial Arc 'improves initial stability. And because of the use of sonic a 古 a τ a *, the energy generated by the field shot does not go deep = diffused ’does not produce a metamorphic part (in the oxide's suppressor (lower oxide) part). According to the present invention, the 15th aspect is a kind of _ Geba manufacturing method, 6 :: In the 14th aspect, the laser is a pulse output with a peak energy of 3MW / C: 2 and above Shoot. In the 15th aspect, the lightning and grinding powder produced by the pulse sublimation of the surface due to the & 丨 long 7 shi & shot, the system is: ΪΠ; the burr generated during the grinding process A sixteenth aspect of the invention is a type of sputtering target, in the fourteenth or fifteenth aspect, i, f + M ′ are characteristic. In the 16th aspect, the laser has a wavelength of M, and in the 16th aspect, the surface is processed by the wavelength i, and the sublimation is removed during the grinding process, especially the dust and dust. The burr and grinding powder formed into this, the first! The 7th aspect is-a kind of base ore, in any of the 1st to 4th to 16th aspects-the ability to expose the T & method is characterized by the evil aspect, the above-mentioned laser is a YAG laser or in 593723 V. Description of the invention (7) Laser excimer. In the 17th aspect, the surface treatment is effectively performed by the YAG laser or the excimer laser, and the initial stability is improved. The eighteenth aspect of the present invention is a method for manufacturing a sputtering target, which is characterized in that, in any of the fourteenth to seventeenth aspects, the surface treatment is performed after the leather is processed and the thickness is adjusted. In the eighteenth aspect, since the burr and the grinding powder formed during the grinding process are removed by sublimation or the like, it is possible to significantly reduce the initial arc that occurs when the drying is started and improve the initial stability. The nineteenth aspect of the present invention is a method for manufacturing a sputtering target, which is characterized in that, in any of the fourteenth to eighteenth aspects, the above-mentioned surface treatment is performed in the final stage of the manufacturing step. In the nineteenth aspect, the initial arc can be effectively reduced by performing laser surface treatment in the final stage as much as possible. The 20th aspect of the present invention is a method for manufacturing a sputtering target, characterized in that, in any of the 14th to 19th aspects, the above is performed after the sputtering target is connected to a Tibetan plated electrode. Surface treatment. In the 20th aspect, the laser surface treatment can be performed after being connected to the sputtering electrode plate, thereby reducing the initial arc more effectively. The twenty-first aspect of the present invention is a method for manufacturing a gold mine handle, which is characterized in that any one of the fourteenth to twenty-three aspects, and the base plating handle is manufactured by Tao Jiu. In the 21st aspect, the burrs and the grinding powder generated during the ceramic grinding process are removed.

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593723 、發明說明（8) 本發明的第2 2態樣是一種濺鍍靶的製造方法，其特徵在 於’在第2 1悲樣中’賤鍍靶是由含有氧化銦和氧化錫中至 少一種的氧化物製造的。 在第2 2態樣中’能夠提供顯著提高了初期穩定性的丨τ〇 濺錢革巴。 本發明的第2 3悲樣是一種濺鍍靶的製造方法，其特徵在 於’具有由雷射進行表面處理以降低加工痕跡的步驟。 在第2 3態樣中，通過用雷射進行表面處理，由昇華等除 去在研削加工時所生成的毛刺和研削粉末，特別是粉塵和 塵埃，因此能夠顯著地降低開始使用靶時發生的初期電 弧，可提高初期穩定性。 、本發明的第2 4恶樣是一種濺艘靶的製造方法，其特徵在 於，在第23態樣中，用5〇〇倍的電子掃描顯微鏡（SEM)觀察 到的靶表面的直線狀加工痕跡，在與該加工痕跡垂直的 2 4 0从m的範圍内為1 〇條以下。 在第24態樣中，通過進行了降低加工痕跡的處理，使得 在用500倍電子掃描顯微鏡（SEM)觀察到的靶表面上的直線 狀加工痕跡，在與該加工痕跡垂直的24〇 # m範圍内為丨〇條593723, description of the invention (8) The second aspect of the present invention is a method for manufacturing a sputtering target, which is characterized in that in the "second first aspect", the base plating target is made of at least one of indium oxide and tin oxide. Made of oxide. In the 22nd aspect, 'can provide a significantly improved initial stability. A twenty-third aspect of the present invention is a method for manufacturing a sputtering target, characterized in that it has a step of surface-treating with a laser to reduce processing marks. In the twenty-third aspect, by performing surface treatment with a laser, burrs and grinding powders generated during the grinding process, especially dust and dust, are removed by sublimation or the like. Therefore, it is possible to significantly reduce the initial stage that occurs when the target is used. Arcing can improve initial stability. 2. The twenty-fourth evil sample of the present invention is a method for manufacturing a sputtering target, and is characterized in that, in the twenty-third aspect, the target surface is linearly processed with a 500-times electron scanning microscope (SEM). The number of traces is 10 or less within a range of 2 40 from m perpendicular to the processing traces. In the twenty-fourth aspect, the processing mark reduction process is performed so that the linear processing mark on the target surface observed with a 500-times electron scanning microscope (SEM) is at 24 ° m perpendicular to the processing mark. Within range 丨 〇

本奄明的第2 5怨樣是一種濺鐘把的製造方法，i 於，在第23或24態樣中，上述表面處理是由寬度 // sec以下的脈衝輪出的雷射進行的。 的脈衝輸出的雷 上擴散，不會產 在第2 5態樣中，由於使用了由指定寬度 射’所以由雷射產生的能量不向深度方向The 2nd and 5th complaints of Ben Tingming are a method of manufacturing a splash clock. In the 23rd or 24th aspect, the surface treatment is performed by a laser emitted by a pulse wheel with a width of less than // sec. The pulse output of the laser will not spread in the 25th aspect. Since the shot with a specified width is used, the energy generated by the laser does not go in the depth direction.

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593723593723

為遇原（低級氣化物）部 五、發明說明（9) 生變質部分（在氧化物的情況下 分）。 本發明的第2 6態樣是一種濺鍍靶的制谇大 於，在第23〜25態樣中任一態樣，採用峰值能量為将敛在 3MW/cm2以上的脈衝輸出的雷射進行上述表面處^里… 在第2 6態樣中，能夠以指定的峰值能量脈衝輪 進行有效的表面處理。 & 出的雷射 本發明的第2 7態樣是一種濺鍍靶的製造方法，其特徵在 於’在第2 3〜2 6態樣中任一態樣，上述表面處理是由波長 為1 · 1 // m以下的雷射進行的。 在第2 7態樣中’能夠由波長為1 · 1 # ^以下的具有指定的 波長的雷射進行有效的表面處理。 本發明的第2 8態樣是一種滅鑛革巴的製造方法，其特徵在 於，在第2 3〜2 7態樣中任一態樣，在加工靶並調整厚度之 後進行上述表面處理。 在第2 8態樣中，由於通過昇華等除去了在研削加工時所 生成的毛刺和研削粉末，所以能夠顯著地降低在乾開始使 用時發生的初期電弧，提高了初期穩定性。 本發明的第29態樣是一種濺鍍靶的製造方法，其特徵在 於，在第23〜28態樣中任一態樣，在最終階段進行上述表 面處理。 在第29態樣中，通過儘可能在最終階段進行雷射表面處 理，能夠有效地降低初期電弧。 本發明的第3 0態樣是一種濺鍍靶的製造方法’其特徵在For the original (lower-level gas) part V. Description of the invention (9) Metamorphic part (in the case of oxides). The twenty-sixth aspect of the present invention is a sputter target with a larger thickness than that of any one of the 23rd to 25th aspects, and the laser is used for the peak energy to converge to a pulse output of 3MW / cm2 or more. On the surface ... In the 26th aspect, it is possible to perform effective surface treatment with a specified peak energy pulse wheel. & The second aspect of the present invention is a method for manufacturing a sputtering target, which is characterized in that 'in any of the second aspect to the second aspect, the surface treatment is performed by a wavelength of one. · Lasers below 1 // m. In the twenty-seventh aspect, 'can be effectively surface-treated by a laser having a specified wavelength with a wavelength of 1 · 1 # ^ or less. The twenty-eighth aspect of the present invention is a method for producing ore-degrading leather, which is characterized in that in any of the second to third aspects, the surface treatment is performed after the target is processed and the thickness is adjusted. In the twenty-eighth aspect, the burr and the grinding powder generated during the grinding process are removed by sublimation or the like, so that the initial arc occurring at the beginning of dry use can be significantly reduced, and the initial stability can be improved. The twenty-ninth aspect of the present invention is a method for manufacturing a sputtering target, which is characterized in that, in any of the 23rd to 28th aspects, the surface treatment is performed at the final stage. In the 29th aspect, it is possible to effectively reduce the initial arc by performing laser surface treatment in the final stage as much as possible. The 30th aspect of the present invention is a method for manufacturing a sputtering target ', which is characterized in that

A:\91118275.ptd 第13頁 593723 五、發明說明（ίο) 於，在第2 3〜2 9態樣中任一態樣，在將靶與濺鍍 連接之後的最終階段進行上述表面處理。 在第3 0態樣中，由於是雷射表面處理，所以能 鍍極板連接之後進行，可更有效地降低初期電弧 本發明的第3 1態樣是一種濺鑛把的製造方法， 於’在第2 3〜3 0態樣中任一態樣，靶是由陶瓷製 在第3 1態樣中，除去陶瓷研削時所生成的毛刺 末。 本發明的第3 2態樣是一種濺鍍靶的製造方法， 於，在第3 1態樣中，靶是由含有氧化銦和氧化錫 種的氧化物製造的。 在第3 2態樣中，能夠提供顯著提高了初期穩定 濺鑛革巴。 在本發明中，通過用指定寬度的脈衝輸出的雷 鍵把表面的精加工，由昇華等除去粉塵、塵埃、 脂污染、以及在研削（或者研磨）加工時所生成的 削粉末、特別是因使用濺鍍時的熱衝擊而容易脫 位’因此幾乎不發生在開始使用該滅鍵革巴時的初 能夠幾乎不用進行預運轉就轉移到薄膜製造的步 著地提高了初期穩定性。另外，由於使用指定寬 輸出的雷射，所以由雷射產生的能量不會向深度 散，不產生變質部分（在氧化物的情況下，為還^ 化物）部分）。在本說明書中，作為文言的"研削·， 削（或者研磨）π。 極板進行 夠在與濺 〇 其特徵在 造的。 和研削粉 其特徵在 中至少一 性的ΙΤΟ 射進行滅 手上的油 毛刺和研 離的部 期電弧， 驟中，顯 度的脈衝 方向擴 ^ (低級氧 表示”研A: \ 91118275.ptd Page 13 593723 5. Description of the invention (ο) In any of the second to third aspects, the surface treatment is performed in the final stage after the target is connected to the sputtering. In the 30th aspect, since it is a laser surface treatment, it can be performed after the electrode plates are connected, and the initial arc can be reduced more effectively. The 31st aspect of the present invention is a method for manufacturing a splatter. In any of the second to third aspects, the target is made of ceramics in the third aspect, and the burr generated during the grinding of the ceramics is removed. A thirty-second aspect of the present invention is a method for manufacturing a sputtering target. In the thirty-first aspect, the target is made of an oxide containing indium oxide and a tin oxide species. In the 32nd aspect, it can provide significantly improved initial stability. In the present invention, by finishing the surface with a thunder key with a pulse output of a specified width, dust, dust, grease contamination is removed by sublimation, etc., and the shaved powder generated during grinding (or grinding) processing, especially Dislocation is easily caused by thermal shock during sputtering. Therefore, the initial stability at the time of starting the use of the key-extinguishing leather can be transferred to the film production step with almost no pre-operation. In addition, because a laser with a specified wide output is used, the energy generated by the laser will not spread to the depth, and no metamorphic portion (in the case of an oxide, a reduction component) will be generated). In this specification, "grinding", which is a classical language, sharpens (or grinds) π. The electrode plate is made with sufficient and splashing characteristics. And grinding powder, which is characterized by at least one-shot ITO emission of oil, burrs on the hand, and the partial arc of the separation. In the step, the direction of the significant pulse expands ^ (lower oxygen means "research"

A:\91118275.ptd 第14頁 五、發明說明（11) 在此，就脈衝寬度為1 〇0 # sec以下的雷射來說，只要是 儘可旎不對靶產生熱應力，而且能夠有效地除去粉塵、塵 埃、手上的油脂等污染、以及在研磨加工時所生成的毛刺 和研磨粉末、特別是因濺鍍時的熱衝擊而容易脫離的部 位，對其媒質的種類以及震盪方法沒有特定的限制。 在本發明中，如果使用脈衝寬度為100/zsec以下，較佳 二下，更佳為0々sec以下的脈衝輸出的雷 ’、曰；生擴散，只在靶表面使粉塵等發生昇華，而 不曰使構成表層的粒子熔融成為一體化。 在此特別疋脈衝覓度為0 · 1 // s e c以下的雷射，自t夠降 低研磨的痕跡，對其媒質的種 限制。 裡鎖和震盪方法都沒有特定的 另外’雷射的照射之條件為：偾 力，而且能夠有效地除去粉塵 ％ 1生熱應 染、以及在研磨加工時所生成=、手^的油脂等污 因滅鑛時的熱衝擊而容易脫和=粉末、特別是 華，需要古处旦 0m， 。卩4 為了有效地產生昇 芈而要同此里，較佳使用1MW/cm2 幵 以上的峰值能量的雷射。對昭 更佳為3MW/Cm2 口徑的雷射掃描或者小直徑雷 特別的限制’大 在本發明中，較佳使用波長為二束是可以的。 使用1.1㈣下的雷身卜$是=:的雷射’更佳為 度方向擴散，不會產生變質部分（，'射產生的能量不向深 還原（低級氧化物）部分）。作為氧化物的情況下，為 射，可以例舉出YAG:Nd雷射（波 發明中可以使用的雷 為1· 〇6 //m)和ArF激元雷 593723 五、發明說明（】2) 射C波長為]92nm) 本發明可適用的濺鍍靶沒有特一 的^巧到由氧化物構成的陶㈣都可適;用,南么點金屬 T調= :而：，陶究乾中，在為 .,,^ Α 订的研則和表面研磨時，容易出银4: 土丨 ;ΓΓΐ!脫離的脆性部位，因此可有效地以: 個例 定性，所以可特別有效地採用本發^要求很冋的初期穩 子二陶£乾為例說明本發明之丨錢&的製造方法的 使用 :將作為原料的粉末以期望的比例 目：：:=種濕式法和乾式法進行成型和“： (H〇t Pi")" ^ M "(C〇ld PrGSS) " ^ "- 製造成成型體，在\ 〃 〃 將混合粉填充在成型模具中 結。而在埶壓法中：汛圍或者氧氣氛圍下進行燒製和燒 作為濕式法，較佳==粉在成型模具中直接燒結。 特開平11-28_2號公報用/如過濾成型法（參照日本專利 下所述的過濾式成型'模且=S亥過慮成型法來說’使用如 而得到成型體原料聚液中減壓除水 即，由具有i個以上==構成的過遽式成型模具， 上放置具有透水性成型用底模、在該成型下模 程式密封的密封材料^心式、以及由上側炎持使該篩檢 J/、勺成型模具框架組成，上述成型用底 Η A:\91118275.ptd 第16頁 593723 五、發明說明（13) —- 模成型用框架、始封材料以及篩檢程式能夠各自分解 2裝在一起，只由該筛檢程式一面進行減壓排水排出漿 % ΐ:將然後，調ΐ由混合粉、離子交換水和有機添加劑 、、’成的水液，將戎水液注入過濾式成型模具中， 程式一側減壓排出漿液中的水分，得到成 =φ双 成型體進行乾燥脫脂後進行燒製。 將付到的 是=種二法中’在比如1το靶的情況下’燒製溫度較佳 疋1 30 0〜1 6 0 0 C，更佳是1 450〜1 6 00 °c。i德 # „上 尺寸進行成型、加工的機械加工，成為靶:、’按照指定 一般來說，在成型後，為了調整厚度 削’特別是為了使表面平滑，在任：；=表面的研 $:的雷射表面處理可以在調整厚度：研磨：本 :在研磨後進行。而無論如何不能在由u進订’也可 理以後再進行研磨等處理。 田射進行了表面處 為在mi雷射進行表面處理的情況下，比如可以- 的毛刺和研削 、去研削時所產生 π位。這就是說，在採用本發明二容易脫離 面的研磨步驟，更佳劣撞wS μ，兄下，能夠省略表 進行表面處理。 v w的研磨步驟而用雷射 〇 5 ,, ®本&明滅錢革巴的表面粗糙度R a可以 〇.5/Zm更大，並且，可以名"1 了以比目前較佳的 為，即使#心 了 在〇· 8以111^^3 左太。、古θ m 面處理，二ί :度以比〇· 5 _大，但由於進行了 乂胝夠大幅度降低初期電弧 田射表A: \ 91118275.ptd Page 14 V. Description of the invention (11) Here, as far as the laser with a pulse width below 100 # sec, as long as it can avoid thermal stress on the target, it can effectively Removal of dust, dust, grease on hands, etc., burrs and abrasive powders generated during the grinding process, especially the parts that are easily detached due to thermal shock during sputtering, there is no specific type of medium and shaking method limits. In the present invention, if a pulse output pulse with a pulse width of 100 / zsec or less, preferably two or more, and less than 0 输出 sec, is used, the diffusion will cause sublimation of dust and the like only on the target surface, and Needless to say, the particles constituting the surface layer are melted and integrated. Here, a laser with a chirping degree of 0 · 1 // s e c or less can reduce the traces of grinding from t and limit the type of medium. There are no specific conditions for the locking and shaking methods. The conditions for laser irradiation are: strong force, and it can effectively remove dust. 1% heat generation and staining, and greasy dirt produced by grinding and processing. Easy to remove due to thermal shock during ore destruction = powder, especially Hua, requires 0m of ancient processing.卩 4 In order to effectively generate 芈, it is preferable to use a laser with a peak energy of 1 MW / cm2 幵 or more. For laser scanning with a diameter of 3MW / Cm2 or a small-diameter laser, it is particularly limited '. In the present invention, it is preferable to use two beams. Using the laser beam under 1.1㈣ $ is =: The laser ’is more preferably diffused in the direction of the degree, and will not produce a metamorphic part (the energy generated by the shot does not reduce to the deep (lower oxide) part). In the case of an oxide, for example, YAG: Nd laser (light wave that can be used in wave invention is 1. · 06 / m) and ArF exciton laser 593723 5. Description of the invention () 2) The emission wavelength is 92nm.) The applicable sputtering target of the present invention is not unique enough to be suitable for ceramics made of oxides; used, South Modal Metal T Tuning =: and: It is easy to produce silver when the research rules and surface grinding for. ,, ^ Α are set. 4: 土 丨; ΓΓ 脱离! The brittle parts that are detached, so it can be effectively qualitatively used, so it can be used effectively. ^ The very demanding initial stage sterilizer is used as an example to illustrate the use of the manufacturing method of the present invention: the powder as a raw material is used in a desired ratio: :: = a wet method and a dry method Molding and ": (H〇t Pi ") " ^ M " (C〇ld PrGSS) " ^ "-Manufactured into a molded body, and the mixed powder was filled in a molding die at \ 〃 〃. In the pressing method: firing and firing are carried out in a flood or oxygen atmosphere as a wet method, preferably == the powder is directly sintered in a molding mold. JP 11-28_2 Application / Such as filter molding method (refer to the filter molding method described in the Japanese patent 'mold == Should molding method', for example, using the method to obtain water from the raw material polymer liquid under reduced pressure, i.e. The above == structured over-molding mold is placed on the bottom mold with water-permeable molding, the sealing material sealed by the lower mold pattern ^ heart type, and the screening J /, spoon molding mold is held by the upper side. Frame composition, the above-mentioned molding bottom Η A: \ 91118275.ptd Page 16 593723 V. Description of the invention (13) --- The molding molding frame, sealing material and screening program can be disassembled and installed together, only by this Screen the program side for decompression and drainage and discharge the slurry.% 将: Then, adjust the water solution consisting of mixed powder, ion-exchanged water and organic additives, and inject the Rong water solution into the filter forming mold. The water in the slurry is drained under reduced pressure to obtain a bi-shaped body of φ, which is dried and degreased and then fired. What is paid is: In the case of a target of 1το in the two methods, the firing temperature is preferably 1 30 0 ~ 1 6 0 0 C, more preferably 1 450 ~ 1 6 00 ° c.i 德 # „Upper size is used for forming and processing mechanical processing, and becomes the target :, 'As specified, in general, after forming, in order to adjust the thickness of the cutting', especially to smooth the surface, at any time: = = surface Grinding laser surface treatment can be adjusted in thickness: grinding: this: after grinding. In any case, it can not be processed by u ordering, or grinding and other treatments can be performed later. Tian She's surface is In the case of mi laser surface treatment, for example, burr and grinding can be performed, and the π position is generated when grinding. That is to say, in the polishing step of the second embodiment of the present invention, wS μ is better and worse, and the surface treatment can be omitted. The laser polishing step of vw is used, and the surface roughness R a of the Ben & Chambba can be larger than 0.5 / Zm, and it can be named " 1. Even if # 心 了 is in 0.8, left with 111 ^^ 3 too. And ancient θ m surface treatment, two ί: the degree is larger than 0.5 5 _, but because of the 乂 胝, the initial arc field shot table can be greatly reduced

A:\91118275.ptd _ 扠回仞期穩定 第17頁 593723 五、發明說明（U) f 另外 由於雷射表面處理又有加大表面粗链度R a的傾 向、結果表面粗糙度也可以變大。 田然不用說，即使在表面粗糙度R a為〇 · 5 // m以下的情況 下’在採用本發明時，也可以取得大幅度降低初期電弧的 效果。 就目‘來說，在研磨步驟完了以後，將靶連接到濺鍍極 板上組成濺鍍靶，本發明的雷射表面處理可以在連接到濺 j極板上以後進行。另外，若考慮製造的濺鍍靶的初期穩 疋性’則較佳在連接濺鍍極板後進行。這是因為在進行雷 射表面處理後可以防止在表面上附著粉塵、塵埃等。 因=，在本發明的進行雷射表面處理以後，較佳立即捆 ，包紮。在使用樹脂薄膜進行捆綁包紮的情況下，與 溥膜接觸的靶表面有微粒轉移的危險，所以較佳使用 脫離性顆粒的樹脂簿膜# # 本 3 包紮方式。u舳溽M，較佳與表面沒有任何接觸的捆綁 般來虎，有裂開性的陶瓷把在如上所述用磨石> 削、研磨加工時，且體地％ 扁栋 仃研 行把的研削、研磨日夺，在把的研磨方向上會殘=擦進 ^線狀的研削傷（研削痕）（在本說仃的 傷都叫做"加工痕跡"），但由本發明的雷射表磨 減少加工痕跡。 J田对表面處理可以 另外，u系靶中，由銑床或車床在比 進仃加工，或者用壓延的方法調整厚I 上 留加工的傷痕，在本說明書中稱 ϋ:會殘 第18頁 A:\91118275.ptd 593723 、發明說明（15) ^痕跡也可以由雷射表面處理而降低，實質上有時還能將 其除去。 、具地說’若進行本發明的雷射表面處理時，用5 〇 〇倍 =ί子掃^顯微鏡（SEM)觀察到的靶表面上直線狀的加工 ’艮跡’在該加工痕跡垂直方向上24〇 的範圍内為10條以 下0 在此’所謂降低，比如陡峭的加工痕跡同時帶有球狀 ^ 要除去的話，肉眼明顯看不出來，實質上有時已不復 =在1而加工痕跡的降低由靶的材質和雷射的波長或輸出 ^關k所决定’在進行本發明的雷射表面處理時，不能稱 為”完全沒有加工痕跡，，。 因田射的照射條件不同也會產生差異，比如，在使用 jG.Nd =射（波長為l 〇6 時，加工痕跡因被降低，實 貝上在夕數情況下肉眼看不出來，而在使用Ad激元雷射 皮長為1 9 2 n m)日守，加工痕跡雖多少會降低，但還達不到 不能用肉眼確認的程度。 總之，根據本發明，通過 鍛開始時專離子體的熱衝擊 在乾表面上的某些粉粒體以 别已經被幵華’且不會因濺 的效果，這樣就能夠降低革巴 了初期穩定性。 用雷射進行表面處理，使得濺 對乾表面進行衝擊而造成滑落 及貝殼狀的裂紋，在濺鍍開始 鐘開始後的熱衝擊而產生滑落 開始使用時的初期電弧，提高 // sec以下、峰值能量 於雷射照射產生的能 特別是，如果使用脈衝寬度在100 在3MW/cm2以上的雷射，可以防止由A: \ 91118275.ptd _ Stability during the intercalation period Page 17 593723 V. Description of the invention (U) f In addition, the laser surface treatment has a tendency to increase the rough chain degree R a of the surface. As a result, the surface roughness can also be changed. Big. Tian Ran needless to say that, even when the surface roughness Ra is 0 · 5 // m or less', when the present invention is used, the effect of significantly reducing the initial arc can be obtained. For the purpose, after the grinding step is completed, the target is connected to the sputtering electrode plate to form a sputtering target. The laser surface treatment of the present invention can be performed after connecting to the sputtering electrode plate. In addition, in consideration of the initial stability of the produced sputtering target, it is preferable to perform it after the sputtering electrode is connected. This is because dust, dust, etc. can be prevented from adhering to the surface after laser surface treatment. Because =, after the laser surface treatment of the present invention, it is preferable to immediately bundle and bandage. In the case of using a resin film for binding and bandaging, the target surface in contact with the diaphragm is in danger of transferring particles, so it is preferable to use a resin film with detachable particles # # This 3 banding method. u 舳 溽 M, it ’s better to come in bundles without any contact with the surface. The cracking ceramic handle is cut and ground with a grindstone as described above. In the grinding direction, the grinding direction will be residual = rubbing into ^ linear grinding injuries (grinding marks) (in this case, the injuries are called " processing marks "), but by the thunder of the present invention Surface grinding reduces machining marks. J Tian can treat the surface. In addition, in the u-series target, the milling machine or lathe is used to process the thickness, or the thickness I is adjusted by calendering to leave a flaw on the surface. : \ 91118275.ptd 593723 、 Explanation (15) ^ Traces can also be reduced by laser surface treatment, which can sometimes be substantially removed. In particular, if the laser surface treatment of the present invention is performed, a linear processing 'generative mark' on the target surface observed with a magnification of 500 times (SEM) is in the vertical direction of the processing mark. The range within the upper 24o is less than 10 0. Here, the so-called reduction, for example, steep processing traces with spherical shape at the same time ^ If you want to remove it, the naked eye can't clearly see it, and it is sometimes no longer == 1 The reduction of traces is determined by the target material and the wavelength or output of the laser. 'When performing the laser surface treatment of the present invention, it cannot be said that there are no processing traces at all. Due to the different irradiation conditions of field lasers, There will be differences, for example, when using jG.Nd = radiation (wavelength is 1.0), the processing traces are reduced, which is not visible to the naked eye under actual conditions, but when using Ad excimer laser skin length (19 2 nm) Nissei, although the processing traces will be somewhat reduced, it can not be confirmed to the naked eye. In short, according to the present invention, the thermal shock of the plasma at the beginning of forging Some powder and granules don't have been ravaged ' It will not be affected by the effect of sputtering, which can reduce the initial stability of the leather. Surface treatment with laser makes the impact of the splash on the dry surface and cause slipping and shell-like cracks. The heat after the start of the sputtering The initial arc at the beginning of use due to impact and slippage is increased, and the peak energy of the laser energy is increased below // sec. In particular, if a laser with a pulse width of 100 or more than 3 MW / cm2 is used, it can be prevented.

593723 五、發明說明（16) ΐ向ί ί ί Ϊ 1散而產生的部分變質(在氧化物的情況 生昇華，二會使m化物））’僅使革巴表面上粉塵等發 這就提高了成表層的粒子發生炫融而產生一體化， 在日本專利特開昭60_2 1 5761號公 鍍靶的形成方法，在婷处_ #H\ &開了—種濺 量射線進行照射，使s声。二ΙΪ線雷射光線等能 化，在表面部分上形成熔融 、體 粉末崩落。該方法是由能量射線了、來自乾的 粒體熔·，形成緻密的固體#^面^刀的微小粉 本發明的表面處理相t : 而防止粉末的崩落，與 月扪衣®羼理相比，在目的和作用〜 的。該公報上所述那樣的熔融層使用 =二王不同 出的雷射是不能形成的，該公報中 輪 大約為10 p的二氧化碳雷射，這盥本、用的：射疋波長 同的。並且’若這樣由雷射光線熔融心：二用的是不 於會通過還原向低價氧化物轉變^成熔融層，由 行），估計把壽命會明顯縮^。文（參照邊公极第3頁第卜2 [發明之實施形態] 下面基於實施例說明本發明 (實施例η 值本發明蓮不限於此。 準備純度大於99.99%的1112〇3粉末和Sn〇 H)wt%、ln203 9 0wt%的比例，準備她旦2 末。按妝Sn02 粉末，由過濾成型法得到成型體里大約為1 · 5Kg的該 氣環境下在1 6⑽°C燒製、燒結§小* 將忒成型體在氧 可。加工該燒結體，得 \:\91118275.ptd 593723 五、發明說明（17) ------- 到與理論密度相比的相對密度為99· 5%的靶。 將該靶在平面研削盤上用丨7〇號的磨石進行研削，調整 其厚度，然後用YAG:Nd雷射（波長g 1 0 64nm)進行表面處 理。 & YAG雷射的照射條件是：光斑尺寸/ 2mm、脈衝寬度 lOnsec、峰值能量32〇MW/cm2、脈衝頻率10Hz，平均1脈 衝的輸出為l〇〇mj /脈衝。平均實效照射能為6· 4J /㈣2。 士按照JIS B0 6 0 1標準測量表面處理後的表面粗糙度Ra， 〜果為2 · 0 6 /z m。具體地說，使用觸針式表面粗糙度計 (T⑼cor公司製P10型），使用尖端半徑為〇· 5 的觸針， 針壓為15mg，在送入速度為、測量寬度為 1.5mm、截止濾光片為8〇〇 的條件下進行測量。 另外，_用50 0倍電子掃描顯微鏡（SEM)觀察到的表面狀況 士 S 1所示在革巴上大約1 7 5 // m X大約2 4 0 // m的範圍内觀 察不到直線狀的研磨痕跡。 (實施例2) 除了採用ArF激元雷射（波長為19211111)代替YAG雷射以 外’以與實施例1相同的方法製造革巴。 •激元雷射的照射條件是：光斑尺寸3 3mmx 15隨、脈衝 度30nsec、峰值能量iiMW/cm2、脈衝頻率ihz，平均j 脈衝的輸出為16mJ/脈衝。平均實效照射能為〇 32J/ cm2 〇 按照JIS B060 1標準測量表面處理後的表面粗糙度Ra， 結果為1. 7 7 // m。593723 V. Description of the invention (16) Partial deterioration caused by 散 向 ί ί Ϊ Ϊ1 (in the case of oxides, sublimation, the second will make m compounds)) 'Only the dust and other hair on the surface of the leather are increased. In order to realize the integration of the particles forming the surface layer, the method of forming a public plating target in Japanese Patent Laid-Open No. Sho 60_2 1 5761 is opened at Ting #_H \ & s sound. The energy of the II line laser is equalized, and the surface part is melted and the bulk powder is collapsed. This method uses energy rays and melts from dry granules to form a dense solid # ^ 面 ^ 刀 的 小 粉 The surface treatment phase of the present invention is to prevent the powder from collapsing. Than, in purpose and role ~. The use of a molten layer as described in this bulletin = lasers produced by two different kings cannot be formed. In this bulletin, a round of carbon dioxide laser with a diameter of about 10 p is used for this purpose. And ’if the core is melted by laser light: the second one is that it will not be converted to a low-value oxide by reduction ^ into a molten layer, and it is estimated that the life will be significantly shortened ^. Text (refer to Bian Gongji, page 3, page 2 [Inventive Embodiment] The following describes the present invention based on examples (Example η value The lotus of the present invention is not limited to this.) 1112 03 powder and Sn with a purity greater than 99.99% are prepared. H) wt%, ln203 9 0wt%, prepare them at the end 2. According to the Sn02 powder, filter molding method is used to obtain a molded body of about 1 · 5Kg in this atmosphere at 16⑽ ° C, firing and sintering §Small * The sintered compact is made in oxygen. Processing the sintered body yields: \ 91118275.ptd 593723 5. Description of the invention (17) ------- The relative density compared to the theoretical density is 99 · 5% target. The target was ground on a flat grinding plate with a No. 70 grindstone, its thickness was adjusted, and then a YAG: Nd laser (wavelength g 0 64 nm) was used for surface treatment. &Amp; YAG Thunder The irradiation conditions are: spot size / 2 mm, pulse width lOnsec, peak energy 32 MW / cm2, pulse frequency 10 Hz, and the average output of one pulse is 100 mj / pulse. The average effective irradiation energy is 6.4J / ㈣2 The surface roughness Ra after the surface treatment is measured in accordance with JIS B0 601, and the result is 2 · 0 6 / zm. Specifically A stylus-type surface roughness meter (type P10 manufactured by T⑼cor Corporation) was used, a stylus with a tip radius of 0.5 was used, the needle pressure was 15 mg, the feeding speed was 1.5 mm, and the cut-off filter was used. The measurement was performed under the condition of 800. In addition, the surface condition observed with a scanning electron microscope (SEM) at a magnification of 500 times is shown on the Geba as about 1 7 5 // m X about 2 4 0 / No linear polishing traces were observed within the range of / m. (Example 2) A Geba was manufactured in the same manner as in Example 1 except that an ArF excimer laser (wavelength 19211111) was used instead of the YAG laser. The irradiation conditions of the excimer laser are: spot size 3 3mmx 15 pulses, pulse 30nsec, peak energy iiMW / cm2, pulse frequency ihz, average j pulse output is 16mJ / pulse. The average effective irradiation energy is 〇32J / cm2. The surface roughness Ra after the surface treatment was measured according to JIS B060 1 and the result was 1. 7 7 // m.

593723 五、發明說明（18) 〜 另外’用50 0倍電子掃描顯微鏡（SEM)觀察到的表面狀況 如圖2所不。在乾上與加工痕跡垂直方向上大約24〇 #爪的 範圍内研磨痕跡在1 〇條以内。但是，不像後述比較例的研 磨痕跡那樣被清楚地觀察到，稍微帶有些圓度，是降低 狀態。 (實施例3) 如貫施例1那樣在平面研削盤上以丨7 〇號磨石進行研削並 調整厚度後，再用4 0 〇號、6 〇 〇號和丨〇 〇 〇號進行三次研磨。 然後，用YAG:Nd雷射（波長為1〇64nm)進行表面處理。 YAG雷射的照射條件是：光斑尺寸声2mm、脈衝寬度 lOnsec、峰值能量32 0MW/cm2、脈衝頻率1〇Hz，平均“固 脈衝的輸出為1 0 Om J /脈衝。平均實效照射能為3 · 2 了 / cm2 ° 按照JIS B06 0 1標準測量表面處理後的表面粗糙度， 結果為0.50 //m。 另外，_用500倍電子掃描顯微鏡（SEM)觀察到的表面狀況 如圖3所不。在靶上大約175 大約24〇 察不到直線狀的研磨痕跡。 ® θ規 (實施例4) 如貫施例1那樣在平面研削盤上以丨7〇號磨石進行研削並 調整厚度後。然後用YAG:Nd雷射（波長為1〇64nm)進行表面 處理。593723 V. Description of the invention (18) ~ In addition, the surface condition observed with a scanning electron microscope (SEM) at 500 times is shown in Fig. 2. Grinding marks in the range of about 24 ° #claw perpendicular to the processing mark on the stem are within 10 lines. However, it is not as clearly observed as the grinding marks of the comparative examples described later, but it is slightly rounded and is in a reduced state. (Example 3) After grinding and adjusting the thickness on a flat grinding plate with a No. 700 grindstone on a flat grinding plate as in Example 1, three times of grinding with No. 400, No. 600 and No. OO were performed. . Then, a YAG: Nd laser (wavelength: 1064 nm) was used for surface treatment. The irradiation conditions of YAG laser are: spot size sound 2mm, pulse width lOnsec, peak energy 32 0MW / cm2, pulse frequency 10Hz, average "solid pulse output is 10 Om J / pulse. The average effective irradiation energy is 3 · 2 ° / cm2 ° The surface roughness after surface treatment was measured according to JIS B06 01, and the result was 0.50 // m. In addition, the surface condition observed with a 500-times electron scanning microscope (SEM) is shown in Figure 3. Straight grinding marks are not observed on the target at about 175 or about 240. ® θ gauge (Example 4) After grinding on a flat grinding plate as in Example 1, grind with a # 70 grindstone and adjust the thickness. Surface treatment with YAG: Nd laser (wavelength: 1064 nm).

YAG雷射的照射條件是： 1 04nsec、峰值能量3. 3MW 光斑尺寸〆〇· 82_、脈衝寬度 'em2、脈衝頻率5〇〇}12，平均1The irradiation conditions of the YAG laser are: 1 04nsec, peak energy 3.3 MW spot size 〆〇 · 82_, pulse width 'em2, pulse frequency 50%} 12, average 1

A:\91118275.ptd 第22頁 州723 五、發明說明（19) ^衝的輸出為3.6mJ/脈衝。平均實效照射能為2〇5j/ 結；:;1::。"*準測量表面處理後的表面粗咖’ =外，用50 0倍電子掃描顯微鏡（SEM)觀 如圖4所示。在革巴上與加工痕跡垂直的方向上大=狀况 的範圍内觀察到6條直線狀的研磨痕跡。 (比較例1 ) 士 ：:“列1中進行平面研削後，不進行雷射表面處理， 成為比較例1的乾。 心按。照JIS B0 60 1標準測量表面粗糖度以，、结果為168 如。卜所干用5 〇在？？ ΐ掃描顯微鏡()觀察到的表面狀況 J : / 工痕跡垂直的方向上大約240心 的範圍内觀察到U條直線狀的研磨痕跡。但是，^ 施例2的研磨痕跡相比，能夠更清楚地觀察到。 貝 (比較例2) f實：例3中用1 0 0 0號磨石進行表面研磨後，不進行雷 射表面處理，成為比較例2的靶。 才女妝JIS B0 60 1標準測量表面粗糙度Ra，結果為〇19 β m 〇 ^ ^外—用5 〇 〇七電子掃描顯微鏡（SEM)觀察到的表面狀況 二所不。在靶上與加工痕跡垂直的方向上大約24 0 // m 的範圍内觀察到140條直線狀的研磨痕跡。 A:\91118275.ptd 593723 五、發明說明（20) 比較例3 ) 除了採用如下所述的照射條件的YAG雷射以外，與實施 例1相同地製造靶。 、 Y A G雷射的照射條件是：光斑尺寸# 2 m m、脈衝寬度 〇.3msec、峰值能量22kW/cm2、脈衝頻率20Hz，平均1脈 衝的輸出為1 0 m J /脈衝。平均實效照射能為丨9 j /⑶2。 按照J I S B 0 6 0 1標準測量表面處理後的表面粗糙度， 結果為1 · 7 0 // m。 另外，用50 0倍電子掃描顯微鏡（SEM)觀察到的表面狀況 如，7所示。在靶上與加工痕跡垂直的方向上大約24〇 “旧 的範圍内觀察到1 2條直線狀的研磨痕跡。但是，不像其他 比較例的研磨痕跡那樣能夠清楚地觀察到。稍帶圓度了 降低的狀態。但在許多地方觀察到部分還原的 & 氧化物：黑色可見的部分）。 〖低級 (試驗例） 使用實施例1〜4和比較例丨〜3的靶，在以下的條件 DC magneton濺鍍機進行連續濺鍍，測定初期電弧的土用 和5 0次壽命。結果如下述表}所示。同時，各實施=^ 較例3的雷射照射條件如表2所示。 比 在此，初期電弧的次數是由各靶開始使用到投入 1 OWh /cm2時發生電弧（異常放電）的次數。而放電的檢二 疋由Landmark Technology公司製造的電弧檢出事 Genesis)進行的。 < 另外，5 0次壽命是指從各靶使用開始時到投入電力為A: \ 91118275.ptd Page 22 State 723 V. Description of the invention (19) The output of the pulse is 3.6mJ / pulse. The average effective radiant energy is 205j / knot;: 1 ::. " * Surface rough surface after quasi-measurement surface treatment '= except, viewed with a scanning electron microscope (SEM) at a magnification of 500 times, as shown in Fig.4. Six straight grinding marks were observed on the leather in a direction that is large in the direction perpendicular to the processing marks. (Comparative Example 1) Jr: "After plane grinding in Column 1, no laser surface treatment was performed, and it became dry in Comparative Example 1. Press the key. The surface sugar content was measured according to JIS B0 60 1, and the result was 168. As shown in the figure, the surface condition observed by the scanning microscope () with a scanning microscope (5) J: / U traces of U-shaped linear grinding marks were observed within a range of about 240 centers in the vertical direction. However, ^ 施The grinding traces of Example 2 can be more clearly observed. Shell (Comparative Example 2) F: In Example 3, the surface was polished with a 100 # grindstone without laser surface treatment, and became a comparative example. The target of 2. The surface roughness Ra was measured according to the JIS B0 60 1 standard, and the result was 〇19 β m ^^^ — the surface condition observed with a 507 electron scanning microscope (SEM) was different. 140 linear grinding marks were observed in a range of approximately 24 0 // m in a direction perpendicular to the machining marks. A: \ 91118275.ptd 593723 5. Description of the invention (20) Comparative example 3) Except for the following, A target was produced in the same manner as in Example 1 except for the YAG laser under the irradiation conditions. The irradiation conditions of YAG laser are: spot size # 2 mm, pulse width 0.3 msec, peak energy 22 kW / cm2, pulse frequency 20 Hz, and the average output of 1 pulse is 10 m J / pulse. The average effective irradiation energy is 9 j / ⑶2. The surface roughness after surface treatment was measured in accordance with JISB 0 601, and the result was 1 · 7 0 // m. In addition, the surface condition observed with a scanning electron microscope (SEM) at a magnification of 500 times was 7 As shown. In the direction perpendicular to the processing marks on the target, approximately 12 linear grinding marks were observed in the old range of approximately 240 °. However, it was not as clearly observed as the polishing marks of other comparative examples. It is slightly rounded and is in a reduced state. However, partially reduced & oxides were observed in many places: black visible parts). [Low-level (Experimental example) Using the targets of Examples 1 to 4 and Comparative Examples 1 to 3, continuous sputtering was performed under the following conditions using a DC magneton sputtering machine, and the soil and initial life of the arc at 50 times were measured. The results are shown in the following Table}. At the same time, the laser irradiation conditions of each implementation = ^ are shown in Table 2 below. In this case, the number of initial arcs is the number of arcs (abnormal discharges) from when each target is used to when 1 OWh / cm2 is charged. The detection of discharge was performed by Arcsis (Genesis) manufactured by Landmark Technology. < The life of 50 times means that the time from when the target is used to when the electric power is input is

A:\91118275.ptd 第24頁A: \ 91118275.ptd Page 24

593723 五、發明說明（21) 1 OWh /cm2除去初期電弧數、累計放電次數為5 0次時的投 入電力（Wh /cm2)。 濺鍍條件·· 革巴尺寸·古y- Λ 丁 .直傻6英寸，厚度6mm 錢鑛方式· η Γ 、 々 ^ magneton ί賤鍍機 排氣I置：旋轉泵+低溫泵593723 V. Description of the invention (21) 1 OWh / cm2 The input power (Wh / cm2) when the initial arc number is removed and the cumulative discharge times are 50 times. Sputtering conditions ·· Geba size · Ancient y- Λ Ding. Straight 6 inches, thickness 6mm Gold mining method η Γ 々 magnet magneton ί base plating machine Exhaust I set: rotary pump + cryogenic pump

Ar的壓力 氧氣分壓 錢鑛電力 表1 達到的真空度：3.0x 10-7[T〇rr] 3· 0 X 10_3[Torr ] 3. 0 X l〇-5[Torr ] 300W(電力密度1. 6W /cm2)The pressure of Ar and the pressure of oxygen and the pressure of the gold mine power meter 1 reached the degree of vacuum: 3.0x 10-7 [T〇rr] 3 · 0 X 10_3 [Torr] 3. 0 X l〇-5 [Torr] 300W (power density 1 6W / cm2)

表面粗糙度 Ra(pm) X500 加工痕跡條數 初期電弧 次数 50次壽命 (Wh/cm2) 貫她例1 2.06 0 1 75 貫施例2 1.77 10 1 75 貫施例3 0.50 0 1 75 貫施例4 1.70 6 1 75 比較例1 1.68 11 1100 65 比丰父例2 0.19 約140 700 64 比早父例3 1.70 12 40 14Surface roughness Ra (pm) X500 Number of machining marks Initial number of arcs 50 times Life (Wh / cm2) Example 1 2.06 0 1 75 Example 2 2.77 10 1 75 Example 3 0.50 0 1 75 Example 4 1.70 6 1 75 Comparative Example 1 1.68 11 1100 65 Than Feng Father Example 2 0.19 about 140 700 64 Than Early Father Example 3 1.70 12 40 14

第25頁 593723 五、發明說明（22) 表2 波長 [μπι] 脈銜寬 度 [/^sec] 脈銜 頻率 [Hz] 光斑尺寸 [mm] 脈銜輸出 [mJ/脈 銜] 峰值能量 [MW/cm2] 實效照射 [J/cm2] 實施例1 1.064 0.01 10 φ2 100 320 6.4 實施例2 0.192 0.03 1 3.3x 1.5 16 11 0.32 實施例3 1.064 0.01 10 φ2 100 320 3.2 實施例4 1.064 0.104 500 Φ 0.82 3.6 3.3 2.05 比较例3 1.064 300 20 φ2 10 0.022 19 _ 由以上的結果可以確認，由雷射進行的表面處理，無論 粗糙度如何，都能夠大幅度減少初期電弧的次數，大幅度 提高初期穩定性。另外，由雷射表面處理降低加工痕跡的 程度隨雷射的種類而異，實質上殘留的加工痕跡對初期電 弧數沒有直接的影響。而且在進行雷射表面處理的情況 下，由於降低了瘤狀體的生成，被認為是提高靶壽命的原 因。 並且，如果像比較例3那樣用能量比較弱的雷射進行比 較長時間的照射，由於雷射能向靶深度方向擴散，可觀察 到還原部分（低級氧化物：黑色可見的部分），其結果，是 靶壽命顯著縮短的結果。 [發明之效果] 如以上的說明，根據本發明，通過由雷射進行表面處Page 25 593723 5. Description of the invention (22) Table 2 Wavelength [μπι] Pulse width [/ ^ sec] Pulse frequency [Hz] Spot size [mm] Pulse output [mJ / pulse] Peak energy [MW / cm2] Effective irradiation [J / cm2] Example 1 1.064 0.01 10 φ2 100 320 6.4 Example 2 0.192 0.03 1 3.3x 1.5 16 11 0.32 Example 3 1.064 0.01 10 φ2 100 320 3.2 Example 4 1.064 0.104 500 Φ 0.82 3.6 3.3 2.05 Comparative Example 3 1.064 300 20 φ2 10 0.022 19 _ From the above results, it can be confirmed that the surface treatment by laser can greatly reduce the number of initial arcs and greatly improve the initial stability regardless of the roughness. In addition, the degree of reduction of the processing marks by the laser surface treatment varies depending on the type of laser, and the substantially remaining processing marks have no direct influence on the initial arc number. In addition, in the case of laser surface treatment, the generation of nodules is reduced, which is considered to be the reason for increasing the target life. Furthermore, if comparatively long-term irradiation is performed with a relatively weak energy laser as in Comparative Example 3, since the laser energy diffuses to the target depth direction, a reduced portion (lower oxide: black visible portion) can be observed. As a result, Is the result of a significant reduction in target life. [Effects of the Invention] As described above, according to the present invention, surface treatment by laser is performed.

A:\91118275.ptd 第26頁 593723 五、發明說明（23) 理，使得濺鍍開始時等離子體的熱衝擊對靶表面進行衝擊 而造成滑落在靶表面上的某些粉粒體以及貝殼狀的裂紋， 在濺鍍開始前已經被昇華，且不會因濺鍍開始後的熱衝擊 而產生滑落的效果，這樣就能夠降低靶開始使用時的初期 電弧，提高了初期穩定性。並且，若由雷射進行表面處理 可以省略多次的研磨步驟，結果可以以低成本進行製造。 %A: \ 91118275.ptd Page 26 593723 V. Description of the invention (23) The principle that the thermal shock of the plasma at the beginning of sputtering impacts the target surface and causes some powders and shells that fall on the target surface and shell shapes The cracks have been sublimated before the start of sputtering, and will not have the effect of slipping due to thermal shock after the start of sputtering. This can reduce the initial arc when the target is used, and improve the initial stability. Moreover, if the surface treatment is performed by laser, multiple polishing steps can be omitted, and as a result, it can be manufactured at low cost. %

A:\91118275.ptd 第27頁 593723A: \ 91118275.ptd Page 27 593723

圖式簡單說明 圖1是顯示本發明之實施例1由50〇倍電子掃描顯微鏡 (SEM)觀察到的表面狀態圖。 兄 圖2是顯示本發明之實施例2由5 0 0倍電子掃描顯微鏡 (SEM)觀察到的表面狀態圖。 兄 圖d是顯示本發明之貫施例d甶倍電子掃描顯微鏡 (SEM)觀察到的表面狀態圖。 兄 圖4是顯示本發明之實施例4由5 0 0倍電子掃描顯微梦 (S Ε Μ )觀察到的表面狀態圖。 ％ π P圖Μ I是Ϊ示本發明之比較例1由5 0 0倍電子掃描顯料_ (SEM)蜆察到的表面狀態圖。 π钿·‘”員α鏡 (S Ε Μ )觀察到的$ = 2例2由5 0 0倍電子掃描顯微鏡 圖7是顯示本笋明^圖。 (通）觀察到例3由5GG倍電子掃描顯微鏡Brief Description of Drawings Fig. 1 is a diagram showing a surface state observed by a scanning electron microscope (SEM) at a magnification of 50 times in Example 1 of the present invention. Fig. 2 is a diagram showing a surface state observed by a 500-times electron scanning microscope (SEM) in Example 2 of the present invention. Fig. D is a diagram showing a surface state observed by an electron scanning microscope (SEM) of a conventional example d of the present invention. Fig. 4 is a diagram showing a surface state observed in Example 4 of the present invention by a 500-times electron scanning microscopic dream (SEM). The% π picture M I is a surface state diagram showing Comparative Example 1 of the present invention as observed by a 500-times electron scanning display (SEM). π 钿 · '"observed by α lens (S Ε) $ = 2 Example 2 Scanned by a 500 × electron scanning microscope Figure 7 is a diagram showing the original image. (Through) Example 3 was observed by 5GG electrons Scanning microscope

A:\91118275.ptd 第28頁A: \ 91118275.ptd Page 28

Claims (1)

請毒44範毋 1 · 一種濺鍍靶，其特 y ：： Λ I 進行表面處理；上述带；巴係由陶瓷製造，並由雷射 3MW/cm2以上之峰 田旦射係以10〇 Vsec以下之脈寬、 1·1 //m以下。 此里的脈衝輸出之雷射，且其波長為 2. 一種濺鍍靶，直牲 經燒結而得之陶资^ 1 $為·靶係由將氧化物之粉末材料 射係以100 vsec以;=，亚由雷射進行表面處理；上述雷 脈衝輸出之雷二=^一 3· -種崎，置特2為1广^以下。 中至少-種之氧化物製造為並含編銦和氧化錫 咖以下之脈寬、請⑽2以上之峰值一 4 : ;:ΐ雷！，且其波長為以下 •如申巧專利範圍第1 、 上述雷射是YAG雷射或激元雷射。、之我鍍靶’其中’ 5 · —種減鍍革巴，立技μ & 進行表面處理，上述雷;3:二係由陶£製造；並由雷射 3MW/W以上之峰值^ It係以100 V以下之脈寬、 1.1—下；同時減里 子掃描顯微鏡（SEM )觀突到的革巴之/口面工上痕:f 跡，在與該加工痕跡/交;到 =二 下。 又万向上240 的範圍内為1〇條以 6. —種濺鍍靶，其特徵為〔靶係由將 =結而得之陶究製造；並由雷射進行表面處理 仏以100 //sec以下之脈寬、3MW/cm2以上之峰值能量的Please poison 44 Fan Wu1 · A sputtering target with special characteristics y: Λ I for surface treatment; the above-mentioned band; Ba series are made of ceramics, and are used by lasers with a peak range of 3MW / cm2 and above. Pulse width, 1 · 1 // m or less. Here the pulse output of the laser, and its wavelength is 2. A sputtering target, ceramic materials obtained by sintering ^ 1 $ is · the target is made by shooting the oxide powder material to 100 vsec; =, Ya surface treatment by laser; the above-mentioned lightning pulse output of the second two = ^ 3--Tanezaki, set special 2 to 1 wide ^ or less. At least one kind of oxide is made of and contains indium and tin oxide. The pulse width below 2 is required, please ⑽2 or more peak 1 4::; 雷! , And its wavelength is as follows: • As mentioned in Shen Qiao's patent scope, the above laser is a YAG laser or an excimer laser. ， 之 我 plating target 'where' 5 ·-a kind of reduced plating leather, Li Ji μ & surface treatment, the above-mentioned lightning; 3: the second series is made of ceramics; and the laser peak of 3MW / W or more ^ It Based on a pulse width below 100 V, 1.1-down; Simultaneous dermatoglyphic / oral surface marks: mark, in the processing mark / intersection; to = two times . Within the range of 240 in the upper direction, there are 10 to 6. Types of sputtering targets, which are characterized by [the target is made of ceramics that will be obtained from the end; and the surface treatment by the laser is 100 sec. The following pulse width, peak energy above 3MW / cm2 593723 一修正 曰 六 案號 91118275 j 申請專利範圍 ___ 脈衝輪出之雷射，且其波長為i 線狀之加工痕跡並以5 〇 〇倍電子# /以下，同時，減低直 的革巴表面上直線狀的加工Λ子，^^=鏡（讓）觀察到 上“Ο❹的範圍内為10條以下。在人遠加工痕跡正交方向 7 至了種賤鑛把，纟特徵為：㈣ =-種之氧化物製造；1由雷射進行表面處; 里 二，I以丨00 μ see以下之脈寬、3MW/cm2以上之峰值能旦立 】：衝輸出之雷射，且其波長為hl 里 工痕跡並卿倍電子掃描顯微鏡(门湖）= p巴表面上直線狀的加工痕跡’在與該加工痕跡正交方 问上2 4 0 // m的範圍内為1 0條以下。 弋-種滅鍍靶的製造方法’其特徵為：纟由陶究所製成 我鍍靶的製造方法中，由雷射進行表面處理，上述雷射 :以1 00 // sec以下之脈見、3MW/Cm2以上之峰值能量的脈 衝輪出之雷射，且其波長為1 · 1 V m以下。 9·—種濺鍍靶的製造方法，其特徵為：在由將氧化物之 粉末材料經燒結而得之陶瓷所製成之濺鍍靶的製造方法 中丄由雷射進行表面處理，上述雷射係以1〇〇 gSec以下之 脈覓、3 M W / c m2以上之峰值能量的脈衝輸出之雷射，且其 波長為1 · 1 V m以下。 1 0 · —種濺鍍靶的製造方法，其特徵為：在由含有氧化 銦和氧化錫中至少一種之氧化物所製成之濺鍍靶的製造方 法中’由雷射進行表面處理’上述雷射係以1 〇 〇 # s e c以下 之脈寬、3MW/cm2以上之峰值能量的脈衝輸出之雷射，且593723 Amends the sixth case No. 91118275 j Patent application scope ___ The laser light emitted by the pulse wheel, and its wavelength is i-line processing traces and 500 times electron # / below, at the same time, the straight leather surface is reduced On the straight processing Λ, ^^ = mirror (Lang) observes that there are less than 10 within the range of "0❹". In the orthogonal direction of the far processing trace, 7 to a kind of low-grade handle, 纟 characteristics are: ㈣ = -Manufacture of oxides of species; 1 by laser on the surface; I, I with a pulse width below 00 μsee, peak value above 3MW / cm2 can stand]: laser output impulse, and its wavelength is The scanning marks on hl are doubled with scanning electron microscope (Menhu) = linear processing marks on the surface of p bar '10 or less in the range of 2 4 0 // m orthogonal to the processing mark.弋 -A kind of manufacturing method of annihilation plating target 'is characterized in that: 我 In the manufacturing method of our plating target made of ceramics, the surface treatment is performed by laser. The above laser: see below 1 00 // sec. Laser pulses with a peak energy of 3 MW / Cm2 and above, and its wavelength is below 1 · 1 V m. 9 · A method for manufacturing a sputtering target, characterized in that: in the method for manufacturing a sputtering target made of ceramics obtained by sintering a powder material of an oxide, surface treatment is performed by a laser, and the above-mentioned laser is based on Lasers with pulses below 100 gSec, lasers with pulse output with peak energy above 3 MW / c m2, and its wavelength is below 1.1 V m. 1 0 · —A method for manufacturing sputtering targets, which has characteristics In order to 'surface-treat by a laser' in a method for producing a sputtering target made of an oxide containing at least one of indium oxide and tin oxide, the above-mentioned laser system has a pulse width of 100 # sec or less, Laser with pulse output of peak energy above 3MW / cm2, and 匕\總檔\91\91118275\91 1 18275(替換)-1 .Ptc 第 30 頁 一月 曰 六 案號 911182^ 、申請專利範圍 __ 其波長為1·1 μιη以下。 11.如申請專利範圍第8至1〇項中任— 方法’其中，上述+ a ν Α Γ 、 員之藏鑛革巴的‘災 Τ上述雷射疋YAG雷射或激元泰 12·如申請專利範圍第8至1〇中任—句射。 方法，1中，在知丁 s 、，邮項之濺鍍靶的製以 理。、中在加工乾亚調整厚度之後進行上述表面處 方':·，如二凊專A”牛第8至10項中任-項之藏鐘把的製造 1 4如.V直:乂驟的最㈣段進行i述表面處理。 方、去° :專1乾圍弟8至10項中任-項之濺鍍靶的製造 理f，其中，在將靶與濺鍍極板連接之後進行上述表面處 、1 5· —種濺鍍靶的製造方法，其特徵為：在由陶曼所製 成之〉賤鑛靶的製造方法中，由雷射進行表面處理，上述雷 射係以100 // sec以下之脈寬、3MW/cm2以上之峰值能量的 脈衝輸出之雷射，且其波長為1 · 1 # m以下；同時，減低加 工痕跡並以5 0 0倍電子掃描顯微鏡（SEM )觀察到的乾表面-上直線狀的加工痕跡，在與該加工痕跡正交方向上2 4 〇 // m 的範圍内為1 0條以下。 1 6 · —種濺鍍靶的製造方法，其特徵為：在由將氧化物 之粉末材料經燒結而得之陶瓷所製成之濺鍍靶的製造方法 中，由雷射進行表面處理，上述雷射係以1 〇〇 # sec以下之 脈寬、3MW/cm2以上之峰值能量的脈衝輸出之雷射，且其 波長為1 · 1 // m以下；同時，減低加工痕跡並以5 0 0倍電子 掃描顯微鏡（SEM )觀察到的靶表面上直線狀的加工痕Dagger \ Overall file \ 91 \ 91118275 \ 91 1 18275 (replacement) -1. Ptc page 30 January 6th case number 911182 ^, the scope of patent application __ Its wavelength is below 1.1 μm. 11. If any of the scope of application for patents Nos. 8 to 10-method 'wherein the above + a ν Α Γ, Yuanzang Mine Geba's disaster above the above-mentioned laser 疋 YAG laser or stimulus Tai 12 · 如Any of the patent applications ranging from 8 to 10-sentence shoot. Method 1. In the process of Zhiding s, the post sputtering target is manufactured. ， In the processing of dry and adjusted thickness, the above-mentioned surface prescription ': ·, such as the Erzhizhuan A "cattle in any of the items 8 to 10-the manufacture of the Tibetan bell handle 1 4 such as .V straight: the most The surface is treated as described in the following paragraph. Fang, Go °: Manufacturing principle of sputtering target of any one of the 8 to 10 items in the first paragraph, wherein the surface is performed after the target is connected to the sputtering electrode. Chu, 1 ·· —A method for manufacturing a sputtering target, characterized in that: in the method for manufacturing a base mine target made by Taurman, the surface treatment is performed by a laser, and the above-mentioned laser is 100 // Laser with pulse width below sec and pulse output with peak energy above 3MW / cm2, and its wavelength is below 1 · 1 # m; meanwhile, reduce processing traces and observe with a 500 times electron scanning microscope (SEM) Dry surface-linear processing marks on the dry surface, in the range orthogonal to the processing marks in the range of 2 4 0 / / m, 10 or less. 1 6 · —A method for manufacturing a sputtering target, characterized in that : In a manufacturing method of a sputtering target made of a ceramic obtained by sintering a powder material of an oxide, the surface is made of a laser In principle, the above laser is a laser with a pulse width of less than 100 sec and a pulse output with a peak energy of more than 3 MW / cm2, and its wavelength is less than 1 · 1 // m; at the same time, the processing trace is reduced and the Straight machining marks on the target surface observed by a scanning electron microscope (SEM) C:\總檔\91\91118275\91118275(替換）-丨.Ptc 第31頁 累唬9111g^ 々、申請專利範圍 =:在與該加工痕跡垂直方向上240 年 曰 修正 “爪的範圍内為丨〇條以 1 7 · 一種濺鍍靶的製造方法，复 銦和氧化錫中至少一種气 1、将被為：在由含有氧化 ,, 1里心平^化物戶斤制々 法中，由雷射進行表面處理，上凉二成之濺鍍靶的製造方 之脈寬、3MW/cm2以上之峰插处旦处运射係以100 #sec以下 其波長為1 · 1 // m以下；同時，減 输出之田射且 子掃描顯微鏡（SEM)觀察到的靶夺°面\痕跡並以5 0 0倍電 下。 门上Z40 的範圍内為ίο條以 、ϋ°申請專利範圍第15至17項中任-項之錢乾的製 仏方法，其中，在加工靶並調整厚度之後進行上述表面 理。 19·如申請專利範圍第15至17項中任一項之濺鍍靶的製 造方法，其中，在最終階段進行上述表面處理。 2 0 ·如申請專利範圍第1 5至1 7項中任一項之濺鍍靶的製 造方法，其中，在將靶與濺鍍極板連接之後的最終階段進 行上述表面處理。C: \ Overall file \ 91 \ 91118275 \ 91118275 (replacement)-丨 .Ptc Page 31 9111g ^ 々, patent application scope =: 240 years in the vertical direction perpendicular to the processing mark, "the range of the claw is:丨 〇 Article 17 · A method for manufacturing a sputtering target. At least one of indium and tin oxide gas 1 will be: The surface of the laser is surface treated. The pulse width of the manufacturer of the sputtering target, which is 20%, and the peak of 3MW / cm2 or higher are interspersed with each other. The radiation is 100 #sec and the wavelength is 1 · 1 // m or less; Minus output of the field shot and the sub-scanning microscope (SEM) observed the target surface and traces and 500 times the electricity. The range of Z40 on the door is ίο, ϋ °, the scope of patent application ranges from 15 to The method of making any of the 17 items-the dry method of making money, wherein the surface treatment is performed after the target is processed and the thickness is adjusted. 19. The method for manufacturing a sputtering target according to any one of claims 15 to 17 Among them, the above-mentioned surface treatment is performed in the final stage. 2 0 · If any of the scope of application for patents 15 to 17 The method of manufacturing the sputtering target items of plating, wherein, when the sputter target and the coated plate after the final stage is connected to carry out the surface treatment. c: \總檔\91\911 18275\91118275(替換）-l.ptc 第32頁c: \ Overall \ 91 \ 911 18275 \ 91118275 (replace) -l.ptc Page 32
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