TW593610B - The solution for ruthenium chemical mechanical planarization - Google Patents
The solution for ruthenium chemical mechanical planarization Download PDFInfo
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- TW593610B TW593610B TW091125073A TW91125073A TW593610B TW 593610 B TW593610 B TW 593610B TW 091125073 A TW091125073 A TW 091125073A TW 91125073 A TW91125073 A TW 91125073A TW 593610 B TW593610 B TW 593610B
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- ruthenium
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- insulating film
- interlayer insulating
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- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 69
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 239000000126 substance Substances 0.000 title abstract description 5
- 239000010410 layer Substances 0.000 claims abstract description 43
- 238000005498 polishing Methods 0.000 claims abstract description 38
- 239000011229 interlayer Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 20
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 11
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000002002 slurry Substances 0.000 claims description 18
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 238000009413 insulation Methods 0.000 description 5
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- YNKVVRHAQCDJQM-UHFFFAOYSA-P diazanium dinitrate Chemical compound [NH4+].[NH4+].[O-][N+]([O-])=O.[O-][N+]([O-])=O YNKVVRHAQCDJQM-UHFFFAOYSA-P 0.000 description 3
- JSGVVGXYIXCAHJ-UHFFFAOYSA-O [N+](=O)([O-])[O-].[Os].[NH4+] Chemical group [N+](=O)([O-])[O-].[Os].[NH4+] JSGVVGXYIXCAHJ-UHFFFAOYSA-O 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
593610 A7 B7 五、發明説明（彳 技術領| 本發明係關於一種用於釕的化學機械拋光（簡稱“CMP”） 的溶液，其包含硝酸和氧化劑。具體地，本發明係關於一 種利用上述的釕CMP溶液進行的包括CMP處理的釕圖案成型 方法。 背景技術 釕是化學上和機械上均穩定的貴金屬，而且是製備高性能 半導體裝置的基本材料。另外，釕最近已被用作形成dram 部件中金屬層/絕緣薄膜/金屬層型電容器中的低電極 (lower electrode) 〇 但是，在CMP處理中不能提供適宜的CMP漿液以抛光釕， 因爲釕的反應性較低。因此，在拋光釕時採用用於其他金 屬如鎢或鋁的漿液。 用於其他金屬的漿液包括用於拋光矽基材上各種金屬層 的化學品。一般地，用於金屬CMP處理且具有pH爲2〜4的強 酸性的漿液包含氧化劑如過氧化氫（h2〇2)或硝酸鐵 (Fe(N03)2)以及研磨劑如氧化鋁（Ai2〇3)或二氧化錳（Mn〇2) 。另外，還可以添加少量的表面活性劑，以改善CMP漿液的 性能。 釕的拋光速度非常慢，所以CMP處理需要在高拋光壓力下 進行很長時間，以便使釕得到充分的拋光。 結果，釕層可能與層間的絕緣薄膜分離，因爲釕層對層 間的絕緣薄膜具有較差的附著力。另外，與層間絕緣薄膜 相鄰的釕層上産生凹陷和腐蝕作用。 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公f) 593610 A7 B7 五、發明説明（2 ) 此外，長時間在高拋光壓力下拋光釕時，漿液中的研磨 劑可此嚴重地劃傷層間的絕緣薄膜，而且産生如漿液沈澱 等雜質並且保留在後來的漿液中。因此，損害所得裝置的 性能。 發明内容 本發明揭示一種用於釕CMP的溶液，其可以在低抛光壓力 下提高釕的拋光速度，並降低釕層的表面凹陷和層間絕緣 薄膜的劃痕。 本發明並揭示了利用上述溶液進行包括CMp處理的金屬 圖案成型方法。 圖式說明 圖1是利用所揭示的溶液進行釕—CMP處理之前由釕成型 的金屬圖案的橫斷面圖。 圖2是利用所揭示的溶液進行釕—CMp處理之後的金屬圖 案的前視圖。 圖3是利用所揭示的溶液進行釕—CMp處理之後除去了釕 的金屬圖案的橫斷面圖。 具體實施型態 本發明揭示了一種含有硝酸和氧化劑的CMp溶液。 該CMP溶液係用於釕的拋光和平整。 較佳者為硝酸的濃度爲約〇·01〜1〇Μ，更佳者為約〇 〇1〜5m ，而且較佳者為pH爲約卜5，更佳者為邱爲約卜3。當硝酸 的濃度小於〇·1 Μ時，氧化劑如硝酸鈽銨[(NH4)2Ce(N〇3)j 的性能降低。 -5- 本纸張尺度適用中國國家標準(CNS) A4規格(210X 297公着了 593610 A7 B7 五、發明説明（3 ) -- 一種較佳的氧化釕的氧化劑爲硝酸鈽銨，其在硝酸中的 濃度爲約0·〇1〜10 Μ，較佳者爲約0.01〜5 Μ。 較佳者為含有硝酸的CMP溶液保持其ρΗ爲約卜5，更佳者 為爲約1〜3 ’甚至在其中添加了氧化劑時。 釕CMP溶液借助於硝酸與適宜氧化劑的組合改變了釕層 表面的物理和化學性質。 換言之，利用所揭示的CMP溶液，釕原子間的結合強度和 緊密度降低，釕層表面的腐蝕和溶解速度增加，在相同壓 力下的拋光速度提高，導致釕層容易平整化。 另外’與常規的漿液相比，該釕CMP溶液不包括研磨劑， 所以可以降低在層間絕緣薄膜中産生的劃痕。 下面將描述製備所揭示的釕CMP溶液的方法。首先，製備 0 · 01〜10 Μ的硝酸，然後向其中加入硝酸鈽銨並攪拌，使硝 酸鈽銨的濃度爲〇.〇1〜1〇 Μ。 其後’進一步擾拌所得的混合物約3 Q分鐘，以使其完全 混合並穩定化。 利用所揭示的釕CMP溶液進行釕圖案成型的方法包括下 述步驟： (a) 在半導體基材上形成具有接觸孔的層間絕緣薄膜圖 案； (b) 在層間絕緣薄膜圖案上形成釕層；以及 (c) 利用所揭示的溶液對釕層的整個表面進行釕處 理0 步驟（c)可以進一步包括利用層間絕緣薄膜的拋光漿液 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 593610 A7 _______ B7 五、發明説明（4 ~ — 對步驟（C)的産物進行接觸型拋光處理的步驟。 在第一 CMP處理中，由釕構成的半導體基材在壓力下與形 成於CMP系統轉盤上的拋光墊接觸。 然後向拋光墊與釕層的介面上供給所揭示的釕CMP溶液 ，並對釕層進行拋光。 CMP處理是在約1〜3 pSi的壓力下，旋轉型系統的轉盤轉 速爲約10〜80 rpm’且轉盤的線性速度爲約1〇〇〜60〇 {叩的 情況下進行的，這取決於釕層的拋光速度和層間絕緣薄膜 的拋光性質。 在第二拋光處理中，在層間絕緣薄膜暴露時，利用層間 絕緣薄膜的CMP漿液對層間絕緣薄臈進行接觸拋光。接觸拋 光是爲了防止因釕層與層間絕緣薄膜之間的拋光選擇性差 異而産生的釕層表面凹陷而進行的緩衝步驟。 在上述CMP處理中可以根據釕層的拋光性質選用不同類 型的拋光墊。例如，可以使用柔軟的拋光墊，以提高拋光 層的均勻性，也可以使用硬質拋光墊，以提高拋光層的平 面性。此外，還可以使用上述兩種拋光墊層壓起來的層疊 塾或者上述拋光塾的組合。 另外，可以在形成釕層之前於層間絕緣薄膜的頂面上形 成金屬附著層，如鈦（Ti)層或者氮化鈦（TiN)層，以便提高 釕的附著性（見圖1)。 也就是說，形成釕圖案的方法可以包括下述步驟： (a)在半導體基材上形成具有接觸孔的層間絕緣薄膜圖 案； 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 593610 A7 B7 五、發明説明（5 ) (b) 在層間絕緣薄膜圖案上形成金屬附著声. (c) 在金屬附著層上形成釕層； (d) 利用所揭示的CMP溶液對釕層的整個表面進行釕CMp 處理，直到露出金屬附著層爲止； (e) 利用金屬漿液對所得的表面進行CMp處理，直到層間 絕緣薄膜暴露出來爲止；以及 (f )對層間絕緣薄膜利用漿液對所得的表面進行接觸拋 光處理。 較佳者為層間絕緣圖案爲氧化物圖案，並使用釕圖案作 爲低電極圖案。 在第一 CMP處理中，由釕構成的半導體基材在壓力下與形 成於CMP系統轉盤上的拋光塾接觸。 然後，向拋光墊與釕層的介面上供給所揭示的釕CMp溶液 ，並對釕層進行拋光。 CMP處理是在約1〜3 pSi的壓力下，旋轉型系統的轉盤轉 速爲約10〜80 rpm，且轉盤的線性速度爲約1〇〇〜6〇〇 ^叩的 情況下進行的，這取決於釕層的拋光速度和層間絕緣薄膜 的拋光性質。 在第二拋光處.理中，對金屬附著層進行拋光（見圖2)。 在第三拋光處理中，在層間絕緣薄膜暴露時，利用層間 絕緣薄膜的CMP漿液對層間絕緣薄膜進行接觸拋光（見圖3) 。接觸拋光是爲了防止因金屬附著層與層間絕緣薄膜之間 的抛光選擇性差異而産生的釕層表面凹陷而進行的緩衝步 驟0 張尺度適财S ®家標準(CNS) M規格(咖χ撕公董)
裝
593610 A7 B7 五、發明説明（6 ) 可以使用通用的漿液作爲上述用於金屬和氧化物薄膜的 CMP漿液。 如前所述，所揭示的CMP處理是利用所揭示的在硝酸中含 有硝酸鈽銨的釕CMP溶液進行的，其可以提高低拋光壓力下 釕的拋光速度，並且減少釕層的表面凹陷。 另外，所揭示的溶液可以降低在層間絕緣薄膜中産生的 劃痕，因爲該溶液不包含研磨劑。 因此可以改進裝置分離的技術並減少覆蓋的步驟。 -9 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
- 1 .— 禋用於釕拋夹m ,, 度範圍爲0.◦二二機械抛光(一 銨[⑽从咖氧^ 3夕6」虱化劑，且無研磨劑。 2·根據申請專利筋圚s, 胃& n 項的溶液，其中該硝酸的濃度範 W 馬 0· 01〜5 Μ 。 3·根據申请專利範圍第1 、穴 爲丨〜5。 1員的洛液，其中該溶液的pH範圍 4 ·根據申清專利範圍第3 、— ..0 項的浴液’其中該溶液的pH範圍 馬1〜3 〇 5·根據申請專利範圍第彳 卢 .n n 1 c 員的/合液，其中該氧化劑的濃度 馬 〇· 01〜5 Μ。 6 ·種形成釕圖案的方法，包括下述步驟： (a) 在半導體基材上形忐呈右 成〃有接觸孔的層間絕緣薄膜圖 案； (b) 在層間絕緣薄膜圖案上形成釕層；以及 (C)利用申請專利範圍第丨項的CMp;液對釕層的整個表 面進行釕的CMP處理。 7.根據申請專利範圍第6項的方法，進—步包括在步驟⑷ 之後’利用層間絕緣薄膜的裝液對步驟(c)的產物進行 接觸性拋光處理的步驟。 8·根據申請專利範圍第6項的方法， 冉中该層間絕緣薄膜 圖案爲氧化物圖案。 9.根據申請專利範圍第6項的方法’其中使用該釕圖案作 爲低電極圖案。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)、申請專利範圍 10·—種形成釘圖案的方法，包括下述步驟： (a)在半V體基材上形成具有接觸 圖案，· 07層間絶緣薄膜 ⑻在層間絕緣薄膜圖案上形成金屬附著声. (C)在金屬附著層上形成釕層； 曰， ⑷:用矣如申請專利範圍第1曰項的CMP溶液對釕層的敕 個表面進行梅處理，直到露出金屬附著 :用金屬漿液對所得的表面進行CMP處 間絕緣薄膜暴露出來爲止；以及 到層 ⑴對層間絕緣薄膜利用漿 拋光處理。 斤付的表面進行接觸 π.根據申請專利範圍第1〇項的 圖案爲氧化物圖案。 方去，其中該層間絕緣薄膜 12·根據申請專利範圍第1 〇項 爲低電極圖案。 的方去，其中使用該釕圖案作
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| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| US7161247B2 (en) | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| US20060200489A1 (en) * | 2005-03-03 | 2006-09-07 | Microsoft Corporation | Company modeling |
| US7900152B2 (en) * | 2005-03-03 | 2011-03-01 | Microsoft Corporation | Adaptable user interface for business software |
| US7917555B2 (en) * | 2005-03-03 | 2011-03-29 | Microsoft Corporation | Creating, storing and viewing process models |
| US7476620B2 (en) * | 2005-03-25 | 2009-01-13 | Dupont Air Products Nanomaterials Llc | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| US20100096584A1 (en) * | 2008-10-22 | 2010-04-22 | Fujimi Corporation | Polishing Composition and Polishing Method Using the Same |
| KR200454347Y1 (ko) * | 2008-12-24 | 2011-06-29 | 이랄라 | 사진인쇄용 시트 |
| US9196283B1 (en) | 2013-03-13 | 2015-11-24 | Western Digital (Fremont), Llc | Method for providing a magnetic recording transducer using a chemical buffer |
| CN104576351B (zh) * | 2013-10-23 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨方法 |
| CN113897611B (zh) * | 2020-06-22 | 2024-01-09 | 国核锆铪理化检测有限公司 | 一种含钌锆合金腐蚀剂及腐蚀方法 |
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| JPH11121411A (ja) * | 1997-10-09 | 1999-04-30 | Matsushita Electron Corp | 研磨用スラリー，白金族系金属膜の研磨方法及び半導体記憶装置のセル形成方法 |
| JP2000038573A (ja) * | 1998-05-19 | 2000-02-08 | Showa Denko Kk | 半導体装置用金属膜研磨スラリ― |
| JP3660511B2 (ja) * | 1998-12-03 | 2005-06-15 | 株式会社東芝 | 研磨方法及び半導体装置の製造方法 |
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| US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| JP2001115144A (ja) * | 1999-10-15 | 2001-04-24 | Hitachi Chem Co Ltd | 研磨材、基板の研磨方法及び半導体装置 |
| KR100529381B1 (ko) * | 1999-11-05 | 2005-11-17 | 주식회사 하이닉스반도체 | 전면식각 및 연마를 이용한 반도체 소자의 캐패시터하부전극 형성 방법 |
| JP3805588B2 (ja) * | 1999-12-27 | 2006-08-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
| KR20010061490A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 접착력 저하에 따른 하부전극의 손실을 방지할 수 있는반도체 소자의 캐패시터 하부전극 형성 방법 |
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| JP3993369B2 (ja) * | 2000-07-14 | 2007-10-17 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100535074B1 (ko) * | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정 |
| US20030003747A1 (en) * | 2001-06-29 | 2003-01-02 | Jae Hong Kim | Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same |
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| US6797624B2 (en) | 2004-09-28 |
| KR20030059441A (ko) | 2003-07-10 |
| CN1215199C (zh) | 2005-08-17 |
| JP2003218067A (ja) | 2003-07-31 |
| KR100444308B1 (ko) | 2004-08-16 |
| JP4756814B2 (ja) | 2011-08-24 |
| US20030124867A1 (en) | 2003-07-03 |
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