TW578194B - Measurement method of dielectric thickness and device thereof - Google Patents

Measurement method of dielectric thickness and device thereof Download PDF

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Publication number
TW578194B
TW578194B TW91137143A TW91137143A TW578194B TW 578194 B TW578194 B TW 578194B TW 91137143 A TW91137143 A TW 91137143A TW 91137143 A TW91137143 A TW 91137143A TW 578194 B TW578194 B TW 578194B
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dielectric layer
measuring
thickness
item
patent application
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TW91137143A
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TW200411712A (en
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Shiang-Wen Wan
Shou-Ling Swei
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Au Optronics Corp
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Abstract

The present invention provides a measurement method of dielectric thickness and device thereof whose structure mainly comprises: a measurement slot to dispose the tested panel on the top; a second bar-like electrode disposed parallel to the bottom of the measurement slot and being perpendicular to the tested panel; and a gas inlet to introduce the inert gas into the discharge space, wherein a discharge unit is formed at the intersection position of the electrode of the tested panel and the electrode of the measurement device. By adjusting the voltage of each discharge unit, the light intensity emitted from each discharge unit is the same, thereby the thickness of dielectric layer of the tested panel at each discharge unit can be computed from different voltages.

Description

578194 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關於一種電漿平面顯示器(plasma display panel ; PDP),且特別是有關於一種PDP的前板與 ♦ 後板之介電層厚度之量測方法及其裝置。 【先前技術】 電漿平面顯示器(P D P )是一種利用惰性氣體放電時所 產生的紫外線激發彩色螢光粉後,再轉換成人眼可接受的 可見光的大面積螢幕顯示器。依據限流工作方式不同,可 分為直流型(DC)與交流型(AC)兩種,目前產品多以交流型 為主。 〜 交流型電漿平面顯示器(PDP)主要可區分成三大製程 (1) 前板前段製程:包括透明電極製造、輔助電極 (bus electrode )製造、誘電體(介電層)製造、MgO保護 膜製造等四部分。 (2) 後板前段製程··包括資料電極(data electrode) (或稱定址電極,address electrode)製造、阻隔壁(rib) 製造、螢光體(phosphor)塗佈、封裝材料塗佈等四部分。 (3 )後段組裝製程··包括將前板和後板對位並暫時固 定後,放入真空排氣裝置内進行排氣抽真空製程,封入放 電用混合氣體,直至壓力約為670 (hPa )。最後進入老化 (ag i ng )製程,透過長時間放電檢測各放電空間發光穩 定性。 每段製程皆必須小心控制,才能維持產品的良率。其578194 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a plasma display panel (PDP), and particularly relates to the dielectric between the front panel and the rear panel of a PDP. Method and device for measuring layer thickness. [Prior art] Plasma flat panel display (P D P) is a large-area screen display that uses ultraviolet light generated during inert gas discharge to excite color phosphors and then converts visible light acceptable to the adult eye. According to the different current limiting working methods, it can be divided into two types: direct current type (DC) and alternating current type (AC). At present, most of the products are mainly AC type. ~ AC plasma flat panel display (PDP) can be divided into three major processes (1) front panel front stage process: including transparent electrode manufacturing, auxiliary electrode (bus electrode) manufacturing, dielectric body (dielectric layer) manufacturing, MgO protective film Manufacturing and other four parts. (2) Manufacturing process of the front part of the rear plate. It includes four parts: data electrode (or address electrode) manufacturing, rib manufacturing, phosphor coating, and coating material coating. . (3) Rear assembly process ... After the front plate and the rear plate are aligned and temporarily fixed, they are put into a vacuum exhaust device to perform an exhaust vacuum process, and the discharge mixed gas is sealed until the pressure is about 670 (hPa) . Finally, it enters the aging (ag i ng) process, and the light emission stability of each discharge space is tested through long-term discharge. Each process must be carefully controlled in order to maintain product yield. its

0632-84l6TWF(nl);AU91093;Felicia.ptd 第5頁 5781940632-84l6TWF (nl); AU91093; Felicia.ptd Page 5 578194

中,製造過程中對於介電層之位置精準度的要求不高,曰 要確保放電時介電層的絕緣性,並且介電層厚度必^相^ 均勻’才能使面板之發光強度具均一性。 、目田 習知量測PDP介電層的厚度之方法如下: 顯微影像分析法:利用掃描式電子顯微鏡 (scanning electrode micr〇scp〇y ;SEM)觀察介電層的破 斷面(cross sect ion),直接量測介電層的厚度。然而, 顯微影像分析法是屬於破壞性量測,需另外製作試片 耗時且無法於製程中同步進行。 一 魯 二、表面紀錄(surface record):利用一輾厚儀 可得知介電層邊緣與基底之厚度差。《而,此方法與適: 於面板邊緣之介電層厚度,卻無從得知面板區域内部之介 電層厚度。 二、橢圓測厚儀:藉由所量測到的矽基板與介電層之 射率,推算出介電層的厚度。然而,此方法需另外製作 片不但耗時且無法於製程中同步進行。並且,一旦 並非由單一材質所構成時,此方法便不適用。一 折 試 層 四In the manufacturing process, the requirements for the accuracy of the position of the dielectric layer are not high. It is necessary to ensure the insulation of the dielectric layer during discharge, and the thickness of the dielectric layer must be ^ phase ^ uniform 'to make the luminous intensity of the panel uniform. . 2. The methods used by Umeda to measure the thickness of the PDP dielectric layer are as follows: Microscopic image analysis method: Using a scanning electron microscope (scanning electrode micr〇scp〇y; SEM) to observe the cross section of the dielectric layer (cross sect ion) , Directly measure the thickness of the dielectric layer. However, the microscopic image analysis method is a destructive measurement, and it requires time to produce additional test strips, which cannot be performed simultaneously in the manufacturing process. Yi Lu 2. Surface record: The thickness difference between the edge of the dielectric layer and the substrate can be determined by using a thickness gauge. "However, this method is suitable: the thickness of the dielectric layer at the edge of the panel, but the thickness of the dielectric layer inside the panel area cannot be known. 2. Ellipse thickness gauge: Based on the measured emissivity of the silicon substrate and the dielectric layer, the thickness of the dielectric layer can be calculated. However, this method requires additional production, which is time consuming and cannot be performed simultaneously in the manufacturing process. Also, this method is not applicable once it is not composed of a single material. One fold test floor

雷射聚焦(laser focus):利用一雷射束(beam)分 2打,,露的基板與具介電層的基板部分,藉由聚焦的差 ::的厚度。然而,此方法也只適用於面板 θ于又Θ热攸传知面板區域内部之介電層厚 二若ί;有翹曲時’便不適用。並且,基底的反射問題 ,彺往會導致聚焦不易。… 習 知之各種量測PDP介電層的 厚度之方法皆有其缺點 578194 五、發明說明(3) ,因此,目前亟需一種 題。 【發明内容】 有鐘於此,為了解 知:供一種介電層厚度之 PDP之前板與後板。 本發明之第一 s的 度之量測方法及其褒置 本發明之第二目的 度之量測方法及其裝置 緣之介電層厚度,也可 厚度。 本發明之第三目的 度之非破壞性量測方法 自動化。 更理想的量測方法’以克服上述問 決上述問題’本發明主要目的在於 量測方法及其裝置,可適用於量測 在於提供一種PDP面板之介電層厚 ,係屬於非破壞性量測。 在於提供一種PDP面板之介電層厚 可—適确於邊训pj^p面板的邊 適用於量測PDP面板内部之介電層 在於提供一種PDP面板之介電層厚 及其裝置,可與製程同步進行,且 本發明之主要特徵係利用當PDP面板之各區域發光強 度一致時所施加之電壓值大小與該區域之介電層厚度成正 比之原理’提供一種介電層厚度之量測裝置,以量測受測 面板之各區域介電層厚度,其構造簡單且相似於pDp面板 ’可直接利用形成介電層後且未形成保護層之前板或形成 介電層後且未形成阻隔壁之後板製作量測裝置。 本發明提供一種介電層厚度之量測裝置,適用於量測 一電漿平面顯示器(PDP)之受測面板之介電層厚度。該面 板係由一透明基板、設置於該透明基板表面之介電層以及Laser focus (laser focus): A laser beam (beam) is divided into two dozens. The exposed substrate and the substrate with a dielectric layer have a difference of focus :: thickness. However, this method is only applicable to the panel θ and Θ, and the thermal layer knows the thickness of the dielectric layer inside the panel area; if warped, it is not applicable. In addition, the reflection of the substrate can cause difficulty in focusing. … The conventional methods for measuring the thickness of the PDP dielectric layer have their shortcomings 578194 V. Description of the Invention (3) Therefore, a problem is urgently needed at present. [Summary of the Invention] There is a bell here for the purpose of understanding: a PDP front plate and a rear plate with a dielectric layer thickness. The method of measuring the degree of the first s of the present invention and its setting The method of measuring the degree of the second purpose of the present invention and the apparatus for measuring the thickness of the dielectric layer may also have a thickness. The third purpose of the present invention is to automate a non-destructive measurement method. A more ideal measurement method 'to overcome the above-mentioned problems and solve the above problems' The main purpose of the present invention is a measurement method and a device thereof, which can be applied to measurement by providing a dielectric layer thickness of a PDP panel, which is a non-destructive measurement . The purpose is to provide a dielectric layer thickness of the PDP panel, which is suitable for measuring the edge of the pj ^ p panel. It is suitable for measuring the dielectric layer inside the PDP panel. It is to provide a dielectric layer thickness of the PDP panel and its device. The manufacturing process is carried out synchronously, and the main feature of the present invention is to provide a measurement of the thickness of the dielectric layer by using the principle that the magnitude of the applied voltage value is proportional to the thickness of the dielectric layer of the region when the luminous intensity of each region of the PDP panel is consistent. Device to measure the thickness of the dielectric layer in each area of the panel under test, its structure is simple and similar to the pDp panel Measuring device for wall back panel. The invention provides a device for measuring the thickness of a dielectric layer, which is suitable for measuring the thickness of a dielectric layer of a panel under test of a plasma flat panel display (PDP). The panel is composed of a transparent substrate, a dielectric layer disposed on a surface of the transparent substrate, and

0632-8416TW(nl);AU91093;Felicia.ptd 第7頁 578194 五、發明說明(4) 平行排列於該透明基底表面之介電層内之複數第一條狀電 極所構成。本發明之量測裝置之結構簡述如下。一量測槽 ,使該受測面板設置於該量測槽頂部,且該受測之該介電 層與該量測槽底部相對,形成一放電空間。並且,複數第 二條狀電極,平行設置於該量測槽底部,且與該些第一電 極相互垂直。另外,一氣體入口,用以導入一惰性氣體至 該放電空間。 如前所述’該量測槽主要包括:一基底以及設置於上 述基底周圍之一支撐裝置。 ' 如前所述’該些第一條狀電極與L第。二條狀電極分 別可由堆疊之透明導電材質與金屬材質所構成,或者亦可 僅由金屬材質所構成。該透明導電材質包括氧化銦錫 (indium tin oxide ; ITO)或二氧化錫(Sn〇2),而該金屬 材質包括絡銅絡(Cr/Cu/Cr)、銀(Ag)、鋁(A1) 、如前所述,本發明之量測裝置更可包括一)=Nl口), 用以排除該惰性氣體。該惰性氣體包括氦()、氖()及 本毛明提出-種藉由前述量測裝置 之方法,此方法的步驟主要係包括·· 丨电㈢序度 首先,放置該面板於一量測裝置頂部。其中,該 面板之該些第一條狀電極盘1晉$丨# 、 “ ,極之交叉處分別形成複數放雷二弟一條狀電 雷懕插s兮^… 電皁然後,分別施加複數 電廢值至該受測面板之該此楚 双心通些第一條狀電 該些第二條狀電極,使該此放雷 :u里劂裝置之 二敌電早疋分別發出亮度一致之0632-8416TW (nl); AU91093; Felicia.ptd Page 7 578194 V. Description of the invention (4) A plurality of first strip electrodes arranged in parallel in a dielectric layer on the surface of the transparent substrate. The structure of the measuring device of the present invention is briefly described as follows. A measuring slot is provided, the panel under test is set on the top of the measuring slot, and the measured dielectric layer is opposite to the bottom of the measuring slot to form a discharge space. In addition, a plurality of second strip-shaped electrodes are arranged in parallel on the bottom of the measuring tank and are perpendicular to the first electrodes. In addition, a gas inlet is used to introduce an inert gas into the discharge space. As described above, the measuring tank mainly includes a base and a supporting device provided around the base. 'As mentioned above' the first strip electrodes and the L's. The two strip electrodes may be composed of stacked transparent conductive materials and metallic materials, or may be composed of metallic materials only. The transparent conductive material includes indium tin oxide (ITO) or tin dioxide (SnO2), and the metal material includes copper (Cr / Cu / Cr), silver (Ag), and aluminum (A1) As mentioned above, the measuring device of the present invention may further include: 1) = N1 port) for excluding the inert gas. The inert gas includes helium (), neon () and Ben Maoming-a method by the aforementioned measuring device, the steps of this method mainly include ... · 丨 electrical order first, place the panel in a measurement Top of the device. Among them, the first strip-shaped electrode pads of the panel are provided with a plurality of electric lightning plugs and a plurality of electric lightning plugs are formed at the intersections of the poles respectively. Then, a plurality of electric currents are applied respectively. The first and second strip-shaped electrodes and the second strip-shaped electrodes of the Chu Shuangxin that are scrapped to the tested panel make the thunder and lightning: the two enemies of the U-Li device have the same brightness.

578194 五、發明說明(5) 亮光。最後,藉由該些放電單元之各別電壓值,推算出該 受測面板上分別對應該些放電單元位置之介電層區域之厚 度,其中發光亮度相同時,該些電壓值大小與該介電層厚 度成正比。 ~ 為使本發明之上述目的、特徵和優點能更明顯易僅, 下文特舉較佳實施例,並配合所附圖式,作詳細說明如下 【實施方式】578194 V. Description of the invention (5) Bright light. Finally, the thicknesses of the dielectric layer regions on the panel under test corresponding to the positions of the discharge cells are calculated from the respective voltage values of the discharge cells. When the light emission brightness is the same, the voltage values are the same as the The thickness of the electrical layer is directly proportional. ~ In order to make the above-mentioned objects, features, and advantages of the present invention more obvious and easy, the following exemplifies preferred embodiments, and in conjunction with the accompanying drawings, a detailed description is as follows [Embodiment]

通常電漿平面顯示器(PDP)是由前板10與後板3〇封 裝組合而成。以第4冊。所示〜之電漿平面顯示器(PDP )結構 為例,前板10是由玻璃基板14、電極16(包括:透明電極22 、辅助電極24)、誘電體層(又稱介電層)18及Mg〇保護A 20所構成,其中透明電極22和輔助電極24係構成維持電本 X和i掃描電極Y。後板30則是由玻璃基板12、資料電極(‘ 稱定址電極)32、介電層33、阻隔壁34所構成。其中阻R 依序塗佈紅色(R)、綠色(G)以及藍色(b) 漿平面顯示器之後刀別,主入乱、…體即構成$Generally, a plasma flat panel display (PDP) is a combination of a front panel 10 and a rear panel 30. Take Book 4. The plasma flat panel display (PDP) structure shown is as an example. The front plate 10 is composed of a glass substrate 14, electrodes 16 (including: transparent electrodes 22, auxiliary electrodes 24), an inducer layer (also called a dielectric layer) 18, and Mg. 〇Protection A 20, wherein the transparent electrode 22 and the auxiliary electrode 24 constitute a sustain electrode X and an i scanning electrode Y. The rear plate 30 is composed of a glass substrate 12, a data electrode ('referred to as an address electrode) 32, a dielectric layer 33, and a barrier wall 34. Among them, the resistance R is sequentially coated with red (R), green (G), and blue (b). After the flat-panel display is cut, the main body is chaotic, and the body constitutes $

明電H:::不11 (PDP)的前板之製程依序包括:透 明電極22的製作、輔助電極 及保護層20的製作。其中 =2"電層33的製作i ,所構成的維持電極X和掃中描電在極由電極22和輔助電極2 能是儲存電荷以達到$ Υ上覆蓋一層介電層18的3 介電層18之位置精準:要上憶效果,製造過程" 、 ^水不尚,但厚度的均一性甚jThe manufacturing process of the front panel of Mingdian H ::: No. 11 (PDP) includes: manufacturing of transparent electrode 22, manufacturing of auxiliary electrode and protective layer 20. Where = 2 " Fabrication of the electrical layer 33, the sustaining electrode X and the scanning electrode constituted by the electrode 22 and the auxiliary electrode 2 can be stored to achieve a charge of 3 to cover a dielectric layer 18 of the dielectric The position of the layer 18 is accurate: to recall the effect, the manufacturing process is not watery, but the thickness uniformity is very high.

第9頁 578194 五、發明說明(6) 重要,並且要確保放電時的絕緣性。 本發明對於量測電漿平面顯示器(PDP)前板的介電 層厚度,係於當介電層1 8覆蓋於維持電極乂和掃描電極γ後 且於形成保護膜2 0之前進行。至於其量測方法將於後文中 做詳細描述。 電漿平面顯示器(PDP )的後板之製程依序包括··資 料電極32的製作、介電層33的製作、阻隔壁34的製作、螢 光體36的塗佈以及封裝材料塗佈。 本發明對於量測電漿平面顯示器(PDP )後板的介電 層厚度’係於當介電層33覆蓋於脊_料電極32後且於形成阻 隔壁34之前進行。至於其量測方法將於後文中做詳細描述 〇 量測PDP前板和後板的介電層厚唐之辞罟 以下將配合第2圖之俯視圖和第3圖之結構剖面圖詳細 說明適用於量測電漿平面顯示器(PDP )前板和後板的介 電層厚度之一種介電層量測裝置100。其中第2圖係為介電 層厚度量測裝置之俯視圖。第3圖為以介電層厚度量測裝 置量測PDP前板和後板的介電層之剖面圖,且皆為第2圖之 a-a’剖面圖。 首先,請參見第3圖,本發明之介電層厚度量測裝置 100可適用於篁測PDP前板1 〇和後板3〇之介電層Μ、μ厚产 。以下為方便起見,統稱該前板10與該後板3〇為受測面才1 ,並且該前板之維持電極X和掃描電極γ以及該後板3〇之資 料電極32皆統稱為平行排列於受測面板上之第一條狀電極Page 9 578194 V. Description of the invention (6) It is important to ensure insulation during discharge. The measurement of the thickness of the dielectric layer of the front panel of the plasma flat panel display (PDP) is performed after the dielectric layer 18 covers the sustaining electrode 乂 and the scanning electrode γ and before the protective film 20 is formed. The measurement method will be described in detail later. The manufacturing process of the back panel of the plasma flat panel display (PDP) includes, in order, the production of the material electrode 32, the production of the dielectric layer 33, the production of the barrier wall 34, the coating of the phosphor 36, and the coating of the packaging material. The measurement of the thickness of the dielectric layer of the rear panel of the plasma flat panel display (PDP) of the present invention is performed after the dielectric layer 33 covers the ridge electrode 32 and before the barrier wall 34 is formed. As for the measurement method, it will be described in detail later. Measure the thickness of the dielectric layer on the front and back of the PDP. A dielectric layer measuring device 100 for measuring the thickness of a dielectric layer of a front panel and a rear panel of a plasma flat panel display (PDP). The second figure is a top view of the dielectric layer thickness measuring device. Fig. 3 is a cross-sectional view of a dielectric layer thickness measuring device for measuring a dielectric layer of a front plate and a back plate of a PDP, and both are a-a 'cross-sectional views of Fig. 2. First, referring to FIG. 3, the dielectric layer thickness measuring device 100 of the present invention can be applied to the measurement of the dielectric layer M and μ thickness of the PDP front plate 10 and the rear plate 30. For the sake of convenience below, the front plate 10 and the rear plate 30 are collectively referred to as the test surface 1, and the sustain electrodes X and scan electrodes γ of the front plate and the data electrodes 32 of the rear plate 30 are collectively referred to as parallel The first strip electrode arranged on the panel under test

578194 發明說明 50 °第3圖可同時表現以一種量測裝置量測pDp前板1〇與後 板3 0時之結構剖面圖。 本發明之介電層厚度量測裝置1〇〇主要包括:由一基 底1 0 2與一支撐結構1 〇 6所構成之一量測槽、平行設置於該 量測槽之基底102表面之複數第二條狀電極104、用以導入 惰性氣體之一氣體入口 1 〇8。本發明之介電層厚度量測裝 置100更可包括一氣體出口 ,用以排出該放電空間20〇 内部之惰性氣體。該基底102與受測面板10、30之介電層 18、33相對設置。該支撐結構1〇6,直立地設置於該基底578194 Description of the invention The third figure at 50 ° can simultaneously show the cross-section of the structure when the pDp front panel 10 and the rear panel 30 are measured with a measuring device. The dielectric layer thickness measuring device 100 of the present invention mainly includes: a measuring groove composed of a substrate 102 and a supporting structure 106, and a plurality of substrates 102 arranged in parallel on the surface of the measuring groove of the measuring groove. The second strip electrode 104 is a gas inlet 108 for introducing an inert gas. The apparatus 100 for measuring the thickness of a dielectric layer of the present invention may further include a gas outlet for discharging an inert gas inside the discharge space 200. The substrate 102 is disposed opposite to the dielectric layers 18 and 33 of the test panels 10 and 30. The supporting structure 106 is set upright on the base

1 02之周圍,用以支撐該受測面板1 0、30,該支撐結構1 06 兩端分別與該受測面板1〇、3〇以及該基底丨〇2接合。該受 測面板10、30、該基底102與該支撐結構1〇6構成一放電空 間20 0 〇 本發明之介電層厚度量測裝置丨00之構造簡單且相似 於PDP前板1〇或後板3〇,可直接利用形成介電層18後且未 形成保護層20之前板10或形成介電層33後且未形成阻隔壁 34之後板30製作量測裝置100。 該介電層厚度量測裝置100之第二條狀電極1〇4的數目 至少為一。此電極104的材質可為透明的導電材質配合導 電I生佳的金屬線,其結構例如電漿平面顯示器(PDP )之 維持電極X和掃描電極γ的結構,所使用之透明的導電材質 可為氧化銦錫(indium tin oxide ;ITO)或二氧化錫 (Sn〇2 ),所使用之金屬線的材質可為鉻/銅/路 (Cr/Cu/Cr )、銀(Ag )、鋁(A1 )或是鎳(Ni )等。此Around 102, it is used to support the test panel 10, 30, and the two ends of the support structure 10 06 are respectively connected to the test panel 10, 30, and the substrate 〇2. The test panel 10, 30, the substrate 102 and the supporting structure 106 constitute a discharge space 200. The structure of the dielectric layer thickness measuring device of the present invention 00 is simple and similar to the PDP front plate 10 or rear. For the plate 30, the measurement device 100 can be directly made of the plate 10 after the dielectric layer 18 is formed and before the protective layer 20 is not formed, or the plate 30 after the dielectric layer 33 is formed and the barrier wall 34 is not formed. The number of the second stripe electrodes 104 of the dielectric layer thickness measuring device 100 is at least one. The material of the electrode 104 may be a transparent conductive material combined with a conductive metal wire. The structure of the electrode 104 is, for example, the structure of a sustaining electrode X and a scanning electrode γ of a plasma flat panel display (PDP). The transparent conductive material used may be Indium tin oxide (ITO) or tin dioxide (SnO2), the material of the metal wire used can be chromium / copper / circuit (Cr / Cu / Cr), silver (Ag), aluminum (A1 ) Or nickel (Ni). this

0632-8416TWF(nl);AU91093;Felicia.ptd 第 11 頁 5781940632-8416TWF (nl); AU91093; Felicia.ptd page 11 578194

外,該第一條狀電極1〇4的材質亦可僅由金屬線構成。 接著’請參見第2圖,該量測裝置1〇〇之第二條狀電極 1 04分別平行排列,且與該受測面板丨〇、3〇之第一條狀電 極50於交叉處形成複數放電單元3 〇〇。在施加電壓進行量 測介電層厚度時,累積於該放電單元3〇〇處之電荷會釋出 以激發該放電空間2 0 0内部之惰性氣體,以於該被施加電 壓之放電單元300位置發光產生亮點。 1用__介厚度量測裝曼量測PDP前板和後板之介雷層In addition, the material of the first strip-shaped electrode 104 may be composed of only metal wires. Next, please refer to FIG. 2, the second stripe electrodes 104 of the measuring device 100 are arranged in parallel and form a plurality of numbers at the intersections with the first stripe electrodes 50 of the panel under test 丨 〇, 30. Discharge cell 3 〇〇. When a voltage is applied to measure the thickness of the dielectric layer, the electric charge accumulated at 300 in the discharge cell will be released to excite an inert gas inside the discharge space 2000 to the position of the voltage applied discharge cell 300. Glowing produces bright spots. 1Use __thickness measurement to measure the dielectric layer of the front and rear panels of the PDP

首先’放置該受測面板1〇、3〇於該量測裝置之支撐結 構106頂部。必需使該受^讲面板1〇、3〇之該些第一條狀電 極50與該量測裝置之該些第二條狀電極1〇4相互垂直。 然後’施加電壓於對應量測區域之介電層丨8、3 3位置 之該第一條狀電極5 0與該第二條狀電極1 〇 4,使量測區域 之該放電單元300發光產生亮點,以相同方式使各放電單 元300發亮’並且藉由調整所施加的電壓值大小,使各放 電單元300發光之強度一致。First, the test panel 10 and 30 are placed on top of the supporting structure 106 of the measurement device. It is necessary to make the first strip electrodes 50 of the receiving panel 10 and 30 and the second strip electrodes 104 of the measuring device perpendicular to each other. Then, a voltage is applied to the dielectric layer corresponding to the measurement area. The first stripe electrode 50 and the second stripe electrode 104 at positions 8, 3 and 3 cause the discharge cell 300 in the measurement area to emit light. Bright points, each discharge cell 300 is illuminated in the same way 'and the intensity of light emitted by each discharge cell 300 is made uniform by adjusting the magnitude of the applied voltage value.

此量測方法中,假設該受測面板10、30之玻璃基板1〇 、1 2之均勻相當高,其厚度不均之誤差可忽略,如此一來 ,此時當惰性氣體被激發而釋放出光時,所穿透過不同區 域之介電層18、33,其厚度並不相同,所以造成發出的光 強度不同。介電層1 8、3 3愈厚,則發光強度愈弱。若欲使 各區域之發光強度一致,必須調整施加於各區域之電壓值 大小。介電層18、33愈厚之區域,所需施加之電壓值愈大 。因此,當各區域之發光強度皆相同時,各區域之電壓值In this measurement method, it is assumed that the uniformity of the glass substrates 10 and 12 of the tested panels 10 and 30 is quite high, and the error of the uneven thickness can be ignored. In this case, when the inert gas is excited, it emits light. At this time, the thicknesses of the dielectric layers 18 and 33 passing through different regions are not the same, so the emitted light intensity is different. The thicker the dielectric layers 18, 3 3, the weaker the light emission intensity. If the luminous intensity of each area is to be consistent, the magnitude of the voltage applied to each area must be adjusted. The thicker the area of the dielectric layers 18, 33, the larger the voltage value to be applied. Therefore, when the luminous intensity of each area is the same, the voltage value of each area

578194 五、發明說明(9) 與該區域之介電層厚度成正比。 最後,紀錄各放電單元300之電壓佶 m ^ ^ 該區域之介電層厚度成正比,所以便可藉因為此電壓值一與 3〇〇之各別電壓值推算出該受測Ά放早70 些放電單元_位置之介電層18、二3°n 壞性量測方法不僅可量測受測 °°域之厚度。此非破 其邊緣m並不受限。 彡緣區域’亦可量測 發明優點: 1 ·本發明之介電層厚度量 量測方法。 、裝置了棱供一種非破壞性 2·本發明不僅可適用於量測pj)p面板的邊 厚度’也可適用於量測PDP而扣、’ 介電層 q 士 板内部之介電層厚度。 3.本發明之介電層厚度量 自動化。 4兴冋步進行,且 4 ·本發明之介電層厚度量測 , 層1後且未形成保i ^ 4 A 接利用形成介電 隔壁之後板製作 别板或形成介電層後且未形成阻 本發明雖以較佳實施例揭露如±,然 — 本發明的範圍,任何熟習此項』=1限疋578194 V. Description of the invention (9) It is proportional to the thickness of the dielectric layer in this area. Finally, the voltage 佶 m ^ ^ of each discharge cell 300 is recorded, and the thickness of the dielectric layer in this area is proportional, so it can be inferred that the measured Ά is early by 70 because of this voltage value and the respective voltage value of 300. The dielectric layer 18 at these discharge cell locations, and the 3 ° n badness measurement method can not only measure the thickness of the measured °° domain. This non-broken edge m is not restricted. The marginal region 'can also be measured. Advantages of the invention: 1. The method for measuring the thickness of a dielectric layer of the present invention. The device is provided with a non-destructive edge 2. The present invention is not only suitable for measuring the thickness of the edge of a pj panel, but also for measuring the thickness of a PDP, and the thickness of a dielectric layer inside a dielectric layer . 3. The thickness of the dielectric layer of the present invention is automated. Four steps are carried out, and 4. The thickness measurement of the dielectric layer of the present invention, after the layer 1 is not formed, ^ 4 A is used to form a separate plate after the dielectric barrier is formed, or after the dielectric layer is formed and not formed. Although the present invention is disclosed in the preferred embodiment, such as ±, then — the scope of the present invention, anyone familiar with this item "= 1 limit"

精神和範圍内,當可做各藉:在不脫離本發明之 ° 田J做谷種的更動與潤飾,因,*欲DDWithin the spirit and scope, it can be borrowed: without changing the scope of the present invention.

〇632-8416TW(nl);AU91093;Felicia.ptd 第13頁 保濩範圍當視後附之申請專利範圍所界定者為準。之 578194 圖式簡單說明 第1圖係顯示習知之PDP之一結構剖面圖。 第2圖係顯示根據本發明之介電層厚度量測裝置之一 較佳實施例之俯視圖。 第3圖係顯示..根據本發明之介電層厚度量測裝置之一 較佳實施例之結構剖面圖。 【符號說明】 3 0〜後板, 1 6〜電極, 24〜輔助電極; 20〜保護層; 34〜阻隔壁; 1 0 0〜量測裝置; 104〜第二條狀電極; 108〜氣體入口; 5 0〜第一條狀電極; 300〜放電單元。 1 0〜前板; 12、14〜玻璃基板 22〜透明電極; 18、33〜介電層; 32〜資料電極; 36〜螢光體; 102〜基板; 106〜支撐結構; 110〜氣體出口; 2 0 0〜放電空間;〇632-8416TW (nl); AU91093; Felicia.ptd Page 13 The scope of guarantee shall be determined by the scope of the attached patent application. Figure 578194 Brief Description of Drawings Figure 1 is a sectional view showing a structure of a conventional PDP. Fig. 2 is a plan view showing a preferred embodiment of a device for measuring the thickness of a dielectric layer according to the present invention. Fig. 3 is a cross-sectional view showing the structure of one preferred embodiment of a device for measuring the thickness of a dielectric layer according to the present invention. [Symbol description] 30 ~ back plate, 16 ~ electrode, 24 ~ auxiliary electrode; 20 ~ protective layer; 34 ~ barrier wall; 100 ~ measurement device; 104 ~ second strip electrode; 108 ~ gas inlet 50 ~ first strip electrode; 300 ~ discharge cell. 10 ~ front plate; 12, 14 ~ glass substrate 22 ~ transparent electrode; 18, 33 ~ dielectric layer; 32 ~ data electrode; 36 ~ phosphor; 102 ~ substrate; 106 ~ support structure; 110 ~ gas outlet; 2 0 0 ~ discharge space;

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Claims (1)

578194578194 1· 一種介電層厚度之量測裝置,適用於量測一電聚平 面顯示器(plasma display panel ; PDP)之受測面板之介 電層厚度,其中該面板係由一透明基板、設置於該透明^ 板表面之介電層以及平行排列於該透明基底表面之介電展 内之複數第一條狀電極所構成,該量測裝置主要包括:θ 一量測槽,用以支撐該受測面板於該量測槽頂部,以 構成一放電空間,且該受測之該介電層與該量測槽底部 對; … 複數第二條狀電極,平行設置於該量測槽底部,且與 該些第一電極相互垂直;以及 —》 一 一氣體入口,設置於該量測槽,用以導入一惰性氣體 至該放電空間。 2·如申請專利範圍第1項所述之介電層厚度之量測裝 置,其中更包括一氣體出口,用以排除該惰性氣體。 3·如申請專利範圍第1項所述之介電層厚度之量測裝 置,其中該些第一條狀電極係由堆疊之透明導電材質與金 屬材質所構成。 4·如申請專利範圍第3項所述之介電層厚度之量測裝 置,其中該透明導電材質包括氧化銦錫(indium tin oxide ; ITO)或二氧化錫(sn〇2)。 5·如申請專利範圍第3項所述之介電層厚度之量測裝 ,置,其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、鋁 (A1)或鎳(Ni)。 6 ·如申請專利範圍第1項所述之介電層厚度之量測裝1. A device for measuring the thickness of a dielectric layer, which is suitable for measuring the thickness of a dielectric layer of a test panel of a plasma display panel (PDP), wherein the panel is formed by a transparent substrate and disposed on the panel. It consists of a dielectric layer on the surface of the transparent plate and a plurality of first strip electrodes arranged in parallel in a dielectric exhibition on the surface of the transparent substrate. The measuring device mainly includes: θ a measuring groove for supporting the measured object The panel is on the top of the measuring tank to form a discharge space, and the measured dielectric layer is opposite to the bottom of the measuring tank; ... a plurality of second strip electrodes are arranged in parallel on the bottom of the measuring tank, and The first electrodes are perpendicular to each other; and —> a gas inlet is provided in the measurement tank for introducing an inert gas into the discharge space. 2. The device for measuring the thickness of a dielectric layer as described in item 1 of the scope of patent application, which further includes a gas outlet for excluding the inert gas. 3. The device for measuring the thickness of the dielectric layer as described in item 1 of the scope of the patent application, wherein the first strip electrodes are composed of stacked transparent conductive materials and metal materials. 4. The device for measuring the thickness of a dielectric layer as described in item 3 of the scope of patent application, wherein the transparent conductive material includes indium tin oxide (ITO) or tin dioxide (snO2). 5. The measurement of the thickness of the dielectric layer as described in item 3 of the scope of the patent application, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel (Ni). 6 · Measurement of dielectric layer thickness as described in item 1 of the scope of patent application 0632-8416TWF(nl);AU91093;Felicia.ptd 第15貢 578194 六、申請專利範圍 置’其中該些第一條狀電極係由金屬材質所構成。 7·如申請專利範圍第6項所述之介電層厚度之量測裝 置’其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、鋁 U1)或鎳(Ni)。. 8·如申請專利範圍第1項所述之介電層厚度之量測裝 置’其中該些第二條狀電極係由堆疊之透明導電材質與金 屬材質所構成。 9 ·如申請專利範圍第8項所述之介電層厚度之量測裝 置’其中該透明導電材質包括氧化銦錫(indiu[n tin oxide ; im 或二氧化錫(Sn〇2)。 1 0 ·如申請專利範圍第8項所述之介電層厚度之量測裝 置’其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr )、銀(Ag)、鋁 (A1)或鎳(Ni)。 11 ·如申請專利範圍第1項所述之介電層厚度之量測裝 置,其中該些第二條狀電極係由金屬材質所構成。 1 2·如申請專利範圍第11項所述之介電層厚度之量測 裝置,其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、 鋁(A1)或鎳(Ni)。0632-8416TWF (nl); AU91093; Felicia.ptd No. 15 tribute 578194 6. Scope of patent application Where the first strip electrodes are made of metal material. 7. The device for measuring the thickness of the dielectric layer according to item 6 of the scope of the patent application, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum U1), or nickel (Ni) . 8. The device for measuring the thickness of the dielectric layer according to item 1 of the scope of the patent application, wherein the second strip electrodes are composed of stacked transparent conductive materials and metal materials. 9 · The device for measuring the thickness of a dielectric layer according to item 8 of the scope of the patent application, wherein the transparent conductive material includes indium tin oxide (indiu [n tin oxide; im or tin dioxide (SnO2). 1 0 The device for measuring the thickness of the dielectric layer according to item 8 of the scope of the patent application, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel (Ni) 11 · The device for measuring the thickness of the dielectric layer as described in item 1 of the scope of patent application, wherein the second strip electrodes are made of a metal material. 1 2 · As described in item 11 of the scope of patent application The device for measuring the thickness of the dielectric layer, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel (Ni). 1 3·如申請專利範圍第1項所述之介電層厚度之量測裝 置’其中該惰性氣體包括氦(He)、氖(Ne)及其兩者之組合 〇 14·如申請專利範圍第1項所述之介電層厚度之量測裝 置’其中該量測槽主要包括·. 一基底;以及1 3. The device for measuring the thickness of a dielectric layer as described in item 1 of the scope of the patent application, wherein the inert gas includes helium (He), neon (Ne), and a combination thereof. 14 The device for measuring the thickness of a dielectric layer according to item 1, wherein the measurement groove mainly includes a substrate; and 0632.8416TW(nl);AU91093;Felicia.ptd 578194 六、申請專利範圍 一支樓結構’直立地設置於上述基底周圍,用以支樓 該受測面板。 、15 · 一種介電層厚度之量測裝置,適用於量測一電漿 平面顯示器(plasma display panel ;PDP)之受測面板之 介電層厚度’其中該面板係由一透明基板、設置於該透明 基板表面之介電層以及平行排列於該透明基底表面之介電 層内之複數第一條狀電極所構成,其主要包括: 一基底,與該受測面板之該介電層相對設置; 一支樓結構,直立地設置於上述基底周圍,用以支樓 該受測面板,該支撐結構兩端分別與該受肩_兩板、該基底 接合,其中該受測面板、該基底與該支撐結構構成一放電 空間; 複數第二條狀電極,平行設置於該基底表面,且與該 受測面板之該些第一電極相互垂直;以及 一氣體入口,用以導入一惰性氣體至該放電空間。 16·如申請專利範圍第丨5項所述之介電層厚度之量測 裝置,其中更包括一氣體出口,用以排除該惰性氣體。 1 7 ·如申請專利範圍第丨5項所述之介電層厚度之量測 裝置’其中該些第一條狀電極係由堆疊之透明導電材質與 金屬材質所構成。 18 ·如申請專利範圍第丨7項所述之介電層厚度之量測 裝置’其中該透明導電材質包括氧化銦錫(indiUm tin oxide ; ITO)或二氧化錫(Sn〇2)。 1 9·如申請專利範圍第1 7項所述之介電層厚度之量測0632.8416TW (nl); AU91093; Felicia.ptd 578194 6. Scope of patent application A building structure is placed upright around the above-mentioned base to support the panel under test. , 15 · A device for measuring the thickness of a dielectric layer, suitable for measuring the thickness of a dielectric layer of a plasma display panel (PDP), where the panel consists of a transparent substrate The transparent substrate comprises a dielectric layer and a plurality of first strip-shaped electrodes arranged in parallel in the dielectric layer on the surface of the transparent substrate, and mainly includes: a substrate opposite to the dielectric layer of the panel under test A building structure, which is set upright around the above-mentioned base to support the test panel of the building, and the two ends of the supporting structure are respectively connected with the shoulder_two plates and the base, wherein the test panel, the base and The supporting structure constitutes a discharge space; a plurality of second strip-shaped electrodes are arranged in parallel on the surface of the substrate and are perpendicular to the first electrodes of the panel under test; and a gas inlet for introducing an inert gas to the Discharge space. 16. The device for measuring the thickness of a dielectric layer according to item 5 of the patent application scope, further comprising a gas outlet for excluding the inert gas. 1 7 · The device for measuring the thickness of a dielectric layer according to item 5 of the scope of the patent application, wherein the first strip electrodes are made of stacked transparent conductive materials and metal materials. 18. The device for measuring the thickness of a dielectric layer as described in item 7 of the scope of the patent application, wherein the transparent conductive material includes indium tin oxide (ITO) or tin dioxide (SnO2). 1 9 · Measurement of dielectric layer thickness as described in item 17 of the scope of patent application 0632-8416TW(nl);AU91093;Felicia.ptd 第17頁 5781940632-8416TW (nl); AU91093; Felicia.ptd p. 17 578194 裝置,其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀( 鋁(A1)或鎳(Ni)。 2 0 ·如申請專利範圍第丨5項所述之介電層厚度之量測 裝置’其中該些第一條狀電極係由金屬材質所構成。 21 ·如申請專利範圍第2 〇項所述之介電層厚度之量測 裝置’其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、 鋁(A1)或鎳(Ni)。 2 2 ·如申請專利範圍第丨5項所述之介電層厚度之量測 裝置,其中該些第二條狀電極係由堆疊之透明導電材質與 金屬材質所構成。 ϋ g 23·如申請專利範圍第22項所述之介電層厚度之量測 裝置’其中該透明導電材質包括氧化銦錫(indium tiri oxide ; ITO)或二氧化錫(Sn〇2)。 24·如申請專利範圍第22項所述之介電層厚度之量測 裝置’其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、 鋁(A1)或鎳(Ni)。 25·如申請專利範圍第1 5項所述之介電層厚度之量測 裝置,其中該些第二條狀電極係由金屬材質所構成。 2 6 ·如申請專利範圍第2 5項所述之介電層厚度之量測 裝置,其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、❿ 鋁(A1)或鎳(Ni)。 2 7 ·如申請專利範圍第1 5項所述之介電層厚度之量測 裝置’其中該惰性氣體包括氦(He)、氖(Ne)及其兩者之組 合0Device, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (aluminum (A1), or nickel (Ni). 2 0 · the amount of the dielectric layer thickness as described in item 5 of the patent application range The measuring device 'wherein the first strip electrodes are made of a metal material. 21 · The measuring device for the thickness of the dielectric layer as described in item 20 of the patent application scope', wherein the metal material includes chromium copper chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel (Ni). 2 2 · The device for measuring the thickness of a dielectric layer as described in item 5 of the patent application scope, wherein the second The electrode is made of stacked transparent conductive materials and metal materials. Ϋ g 23 · The device for measuring the thickness of the dielectric layer according to item 22 of the scope of the patent application, wherein the transparent conductive material includes indium tin oxide (indium tiri oxide; ITO) or tin dioxide (SnO2). 24. The device for measuring the thickness of a dielectric layer as described in item 22 of the scope of patent application, wherein the metal material includes chrome copper chromium (Cr / Cu / Cr) , Silver (Ag), aluminum (A1), or nickel (Ni) 25. Measurement of the thickness of the dielectric layer as described in item 15 of the scope of patent application The second strip-shaped electrode is made of a metal material. 2 6 The device for measuring the thickness of a dielectric layer as described in item 25 of the patent application scope, wherein the metal material includes chromium copper chromium (Cr / Cu / Cr), silver (Ag), yttrium aluminum (A1) or nickel (Ni). 2 7 • Device for measuring the thickness of a dielectric layer as described in item 15 of the scope of patent application 'wherein the inert gas includes Helium (He), neon (Ne), and a combination of both 0632-8416TW(nl);AU91093;Felicia.ptd 5781940632-8416TW (nl); AU91093; Felicia.ptd 578194 2 8 · —種介電層厚度之量測方法,適用於量測一電襞 平面顯示器(plasma display panel ;PDP)之受測面板之 介電層厚度,其中該面板係由一透明基板、設置於該透明 基板表面之介電層以及平行排列於該透明基底表面之介電 層内之複數第一條狀電極所構成,該方法主要包括: 放置該面板於一量測裝置頂部,該量測裝置主要包括 一量測槽,該受測面板之該介電層與該量測 槽底部相對,形成一放電空間;2 8 · —A method for measuring the thickness of a dielectric layer, suitable for measuring the thickness of a dielectric layer of a test panel of a plasma display panel (PDP), wherein the panel consists of a transparent substrate, The method includes a dielectric layer on the surface of the transparent substrate and a plurality of first strip electrodes arranged in parallel in the dielectric layer on the surface of the transparent substrate. The method mainly includes: placing the panel on top of a measuring device, the measuring The device mainly includes a measuring slot, and the dielectric layer of the panel under test is opposite to the bottom of the measuring slot to form a discharge space; 複數第一條狀電極,平行設置於該量測槽底 部’且與該些第一電極相互垂直;以及 一氣體入口’用以導入一惰性氣體至該放電 空間, 其中該受測面板之該些第一條狀電極與該量 測裝置之該些第二條狀電極之交又處分別形成複 數放電單元, 分別施加複數電壓值至該受測面板之該些第一條狀電 極與該量測裝置之該些第二條狀電極,使該些放電單元分 別發出亮度一致之亮光;以及A plurality of first strip-shaped electrodes are arranged in parallel to the bottom of the measuring tank and are perpendicular to the first electrodes; and a gas inlet is used to introduce an inert gas into the discharge space, wherein A plurality of discharge cells are formed at the intersections of the first stripe electrodes and the second stripe electrodes of the measuring device, respectively, and a plurality of voltage values are applied to the first stripe electrodes of the panel under test and the measurement respectively. The second strip-shaped electrodes of the device, so that the discharge cells emit bright light with uniform brightness respectively; and 藉由該些放電單元之各別電壓值,推算出該受測面板 上分別對應該些放電單元位置之介電層區域之厚度, 其中發光亮度相同時,該些電壓值大小與該介電層厚 度成正比。 29·如申請專利範圍第28項所述之介電層厚度之量測Based on the respective voltage values of the discharge cells, the thicknesses of the dielectric layer regions on the panel under test corresponding to the positions of the discharge cells are calculated. When the light emission brightness is the same, the voltage values are the same as the dielectric layer. The thickness is proportional. 29. Measurement of the thickness of the dielectric layer as described in item 28 of the scope of patent application 578194 六、申請專利範圍 方法,其中該受測面板係為前板。 30·如申請專利範圍第28項所述之介電層厚度之量測 方法,其中該受測面板係為後板。 31 ·如申請專利範圍第2 8項所述之介電層厚度之量測 方法,其中更包括一氣體出口,用以排除該惰性氣體。 3 2 ·如申請專利範圍第2 8項所述之介電層厚度之量測 方法,其中該些第一條狀電極係由堆疊之透明導電材質與 金屬材質所構成。 3 3 ·如申請專利範圍第3 2項所述之介電層厚度之量測 方法,其中該透明導電材質包括氧化銦錫(indium tin oxide ; ITO)或二氧化錫(sn〇2)。 34·如申請專利範圍第32項所述之介電層厚度之量測 方法’其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、 鋁(A1)或鎳(Ni)。 3 5 ·如申請專利範圍第2 8項所述之介電層厚度之量測 方法,其中該些第一條狀電極係由金屬材質所構成。 36·如申請專利範圍第35項所述之介電層厚度之量測 方法,其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、 鋁(A1)或鎳(Ni)。 3 7·如申請專利範圍第28項所述之介電層厚度之量測 方法’其中該些第二條狀電極係由堆疊之透明導電材質與 j金屬材質所構成。 38·如申請專利範圍第3?項所述之介電層厚度之量測 方法’其中該透明導電材質包括氧化銦錫(in(jiUD1 tin578194 6. Method of applying for a patent, wherein the panel under test is a front panel. 30. The method for measuring the thickness of a dielectric layer according to item 28 of the scope of application for a patent, wherein the panel under test is a rear panel. 31. The method for measuring the thickness of a dielectric layer as described in item 28 of the scope of the patent application, which further includes a gas outlet for excluding the inert gas. 3 2 · The method for measuring the thickness of a dielectric layer according to item 28 of the scope of patent application, wherein the first strip electrodes are composed of stacked transparent conductive materials and metal materials. 33. The method for measuring the thickness of a dielectric layer according to item 32 of the scope of the patent application, wherein the transparent conductive material includes indium tin oxide (ITO) or tin dioxide (snO2). 34. The method for measuring the thickness of the dielectric layer according to item 32 of the scope of the patent application, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel (Ni ). 3 5 · The method for measuring the thickness of a dielectric layer according to item 28 of the scope of patent application, wherein the first strip electrodes are made of a metal material. 36. The method for measuring the thickness of a dielectric layer according to item 35 of the scope of the patent application, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel (Ni ). 37. The method for measuring the thickness of the dielectric layer according to item 28 of the scope of the patent application, wherein the second strip electrodes are composed of stacked transparent conductive materials and j metal materials. 38. The method for measuring the thickness of a dielectric layer as described in item 3 of the scope of the patent application, wherein the transparent conductive material includes indium tin oxide (in (jiUD1 tin 0632-8416TW(nl);AU91093;Felicia.ptd 第20頁 578194 六、申請專利範圍 oxide ; ITO)或二氧化錫(Sn〇2)。 39·如申請專利範圍第37項所述之介電層厚度之量測 方法’其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、 鋁(A1)或鎳(Ni)。 40·如申請專利範圍第28項所述之介電層厚度之量測 方法’其中該些第二條狀電極係由金屬材質所構成。 41 ·如申請專利範圍第4 0項所述之介電層厚度之量測 方法,其中該金屬材質包括鉻銅鉻(Cr/Cu/Cr)、銀(Ag)、 鋁(A1)或鎳(Ni)。 42·如申請專利範圍第28項所述之介電層厚度之量測 方法,其中該惰性氣體包括氦(He)、氖(Ne)及其兩者之組 合0 —0632-8416TW (nl); AU91093; Felicia.ptd page 20 578194 6. Patent application scope: oxide; ITO) or tin dioxide (SnO2). 39. The method for measuring the thickness of the dielectric layer according to item 37 of the scope of the patent application, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel (Ni ). 40. The method for measuring the thickness of a dielectric layer according to item 28 of the scope of the patent application, wherein the second strip electrodes are made of a metal material. 41. The method for measuring the thickness of a dielectric layer as described in item 40 of the scope of patent application, wherein the metal material includes chromium, copper, chromium (Cr / Cu / Cr), silver (Ag), aluminum (A1), or nickel ( Ni). 42. The method for measuring the thickness of a dielectric layer according to item 28 of the scope of the patent application, wherein the inert gas includes helium (He), neon (Ne), and a combination thereof. 0632-8416TWF(nl);AU91093;Felicia.ptd 第21頁0632-8416TWF (nl); AU91093; Felicia.ptd Page 21
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1841295A3 (en) * 2006-03-29 2010-05-05 Ngk Insulators, Ltd. Plasma generating electrode inspection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1841295A3 (en) * 2006-03-29 2010-05-05 Ngk Insulators, Ltd. Plasma generating electrode inspection device

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