TW574442B - Apparatus and method for producing semiconductor single crystal - Google Patents

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574442 A7 B7 五、發明説明（彳） 【發明所屬之技術領域】 (請先閱讀背面之注意事項再填寫本頁) 本發明係關於一種使用切克勞斯基法（Czochralski Method，以下亦稱爲C Z法）之半導體單晶的製造裝置以 及製造方法，詳言之，係關於一.種將用來加熱熔融半導體 單晶製造裝置之結晶成長爐內部所收容之坩堝內原料的加 熱器之發熱部以外的電力損失減少，以降低製造成本並且 提高裝置之可靠性的半導體單晶的製造裝置以及利用該裝 置之半導體單晶的製造方法。、 【習知技術】 經濟部智慧財產局員工消費合作社印製 過去，半導體單晶的製造方法中已知有一種將半導體 單晶原料塡充在半導體製造裝置之結晶成長爐內部所配置 的坩堝，並且利用設置在坩堝外側的加熱器使之熔融而成 爲融液，然後使籽晶接融於該原料融液，以於籽晶下方形 成半導體單晶的C Z法。而且，爲了獲得矽或G a A s ( 砷化鎵）等的半導體單晶，利用C Z法的半導體單晶之形 成技術已大量運用在工業用途上，以下便以矽半導體單晶 之形成作爲其一例來說明本發明之習知例。 利用C Z法的矽半導體單晶之形成方法，首先係將作 爲原料之多晶矽塡充在製造裝置之結晶成長爐內部所裝設 之外側爲石墨、內側爲石英所構成的坩堝，並且在使結晶 成長爐內部充滿氬（以下稱爲A r )等惰性氣體之後，利 用裝有原料之坩堝的外側周圍所配設的石墨製加熱器，對 其加熱至1 4 2 0 °C以上的高溫，而成爲原料融液。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4 - 574442 A7 B7 五、發明説明（2) (請先閱讀背面之注意事項再填寫本頁) 然後，在原料融液之溫度穩定成爲適合進行單晶提拉 的溫度時，從融液上方降下籽晶’使前端稍微浸泡於原料 融液表面，並且在籽晶之溫度穩定時，一邊使籽晶與增堝 相互朝不同方向旋轉，一邊緩緩向上方拉起，藉此於好晶 下方形成矽的半導體單晶。 此時，爲了熔解作爲半導體單晶之原料的多晶矽，並 且避免其在形成半導體單晶時因爲原料融液之溫度下降而 固化，對於配置在用來保持原料融液之坩堝外側周圍的加 熱器會經常性地持續供應用來加溫原料融液的電力。 在半導體單晶之製造裝置，尤其是矽半導體單晶之製 造裝置中，爲了加熱熔融作爲半導體單晶之原料的多晶矽 ，並且以融液的狀態加以保持，必須在矽之融點 1 4 2 0 °C以上的高溫環境下加溫結晶成長爐內部來形成 單晶，因此配設在半導體單晶製造裝置之結晶成長爐內部 的構造物之材料幾乎皆是使用石墨材料。 經濟部智慧財產局員工消費合作社印製 石墨材料比起金屬等，係熱膨漲率較小、耐熱衝擊性 佳、而且融點非常高的材料。因此最適合作爲會暴露於高 溫環境之結晶成長爐內部的構造物構件之材料，而且與石 墨以外之高融點金屬材料等材料相較，更容易進行形狀加 ’工，成本上也較便宜，因此工業用途上需量產半導體單晶 的製造裝置會大量使用以石墨爲材料的構件。 而且，爲了加熱原料融液，配置在半導體單晶結晶成 長裝置的加熱器也是考慮到石墨的這些特性，而使大部分 以石墨材料爲主體而構成。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5- 574442 A7 _____ B7 _ 五、發明説明（3) (請先閲讀背面之注意事項再填寫本頁) 另外，單晶製造裝置之結晶成長爐係使上述由石墨形 成的加熱器及坩堝、絕熱材料等爐內構造物，以結晶成長 爐內之保溫及保護結晶成長爐爐壁爲目的而複雜地配置， 因此爲了在狹窄的結晶成長爐內完全有效地發揮效果，乃 使爐內構造物之各零件相互保持些許間隙而配置在製造裝 置之結晶成長爐內部。 而且，不僅在單晶製造裝置之結晶成長爐內部，以大 量石墨爲材料製成的爐內構造物係各自保持些許間隙而配 置，石墨材料本身又係電性導電率很高的良導體，且兼具 電性容易流通的特性，因此從結晶成長爐內之坩堝周圍所 配置的加熱器、或是在結晶成長爐內部連接加熱器與結晶 成長爐下部所設置之金屬電極的電流路徑構件等會發生電 流的外漏或放電，爲了避免對爐內構造物造成損害，或是 避免帶來電性故障以致作業困難，單晶成長時施加於加熱 器的電壓係盡可能降低地來持續作業。 經濟部智慧財產局員工消費合作社印製 尤其，最近在形成矽半導體單晶時，爲了使結晶品質 成爲所希望之値，並且獲得具有穩定特性的半導體單晶， 或是爲了避免從結晶成長爐內部之原料融液所蒸發的 S i 0 (氧化矽）等氧化物附著於爐內之構造物或爐壁， 以長時間地維持作業，必須使結晶成長爐內部的惰性氣體 有效地排出至外部，因此大多係採用一種降低結晶成長爐 內部之壓力來進行作業的方法。 此時，在有電流通過的加熱器或電流路徑構件或電極 等，爲了避免由於施加電壓而在爐內發生放電，施加於爐 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) _ Ο 574442 A7 B7 五、發明説明（4) (請先閱讀背面之注意事項再填寫本頁) 內下部之電極的電壓會保持低電壓，一般係施加5 Ο V左 右的低電壓，藉此防止在石墨材料所構成的爐內構造物構 件之間發生放電，致使加熱器發熱。 【發明之揭示】 在形成矽半導體單晶時，融解多晶矽所需的電力通常 在1 5 0 k W左右，融解多晶矽之後，爲了在提拉單晶時 以融液的狀態保持原料，必須持續對加熱器供應 1 0 0 kW左右的電力。而且，爲了在上述的低施加電壓 下供應這些電力，通電於加熱器的電流必須是1 〇 〇 〇至 5 Ο Ο 0A左右的極大電流。 然而，爲了熔解多晶原料並且以矽融液的狀態加以保 持，而使這種大電流通電於製造裝置之爐內時，除了加熱 器以外，就連用來對加熱器供應電力之設置於結晶成長爐 內部的電流路徑構件也會產生不必要的熱。此乃由於此電 流路徑構件與加熱器皆由石墨形成，且具有與加熱器相同 程度的電阻率。 經濟部智慧財產局員工消費合作社印製 配置在此製造裝置結晶成長爐內的電流路徑構件之發 熱與加溫原料融液之發熱並沒有關係，不注意就會平白地 消耗電力，在單晶形成時必須盡量避免。尤其在形成砂半 導體單晶時，結晶定徑部的成長速度非常慢，爲〇 . 5至 1 mm/ m i η左右，拉起一根砂單晶，若包含原料熔融 時間，則需要2 0至3 0小時這麼長的製造時間。 在這當中，必須對加熱器供應1 〇 〇 k W左右的電力 本紙張尺度適用中师家標準（CNS ) A4規格（21GX297公釐） ' -- 574442 A7 B7 五、發明説明（5) (請先閱讀背面之注意事項再填寫本頁) 以持續加熱，當然在加熱器以外的電流路徑構件也會持續 地消耗不必要的電力，即使是電流路徑構件等加熱器以外 的些許電力損失，若不斷累積也會促進單晶之製造成本或 發熱部位及其周邊之石墨零件之劣化，因此最好盡可能避 免不必要部分之電力損失，來持續進行作業。 再者，即使是些許的能源損失，但減輕該損失以進行 毫無浪費能源的生產多少都必須考慮環境問題再來進行生 產活動。 而且，最近使用c Z法的矽半導體之單晶製造裝置， 爲了達成半導體晶圓上所形成的半導體元件之高集積化， 或是增加從一片半導體晶圓所獲得之半導體元件數目以提 高產量，於是越來越需要超過3 0 Omm之大直徑半導體 晶圓，爲了滿足此需求，正引進可收容口徑超過7 0 c m 之大型石英坩堝的製造裝置，以作爲有效生產大直徑單晶 的機構。 經濟部智慧財產局員工消費合作社印製 這種可收容大口徑坩堝的單晶製造裝置中所使用的加 熱器與製造裝置內所收容的坩堝之大型化成正比，另一方 面，隨著加熱器的大型化，形成對加熱器供應電力之電流 路徑的電流路徑構件也必須是大型且長的路徑。而且，因 此在此電流路徑構件所消耗的電量會變大，而成爲不可忽 視的値。 再者，上述大型的單晶形成裝置中，發熱部以外的發 熱量會增加，因此配置在爐內的構造物構件之劣化也會加 速，使得爐內構造物之消耗更爲激烈，因此在大型的單晶 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8 - 574442 Α7 Β7 五、發明説明（6) (請先閲讀背面之注意事項再填寫本頁) 形成裝置中，比起生產直徑6英吋以下之結晶的中型機’ 顯示出結晶成長爐內部所配置的構造物零件之更換頻率也 較高。 由於這種理由，在現今之主力，即拉起直徑超過 2 0 Omm這種半導體單晶的製造裝置中，尤其需要降低 對加熱器供應電力之電流路徑的電力損失。而且，在其他 的半導體單晶製造裝置中，若考慮到製造成本及爐內構造 物之劣化等問題，也應該避免浪費不必要之電力，最好盡 可能是能源損失少的半導體單晶製造之製造裝置。 經濟部智慧財產局員工消費合作社印製 本發明係鑒於這種問題點而硏創者，其目的在於提供 一種半導體單晶的製造裝置以及半導體單晶的製造方法， 其係在利用C Z法製造半導體單晶的半導體單晶製造裝置 中，使構成結晶成長爐內部之金屬電極至加熱器間之電流 路徑以對於加熱器供應電力的電流路徑構件之電阻比加熱 器之電阻還小，而可抑制供電流通過的電流路徑之發熱來 降低消耗電力，還可防止製造裝置結晶成長爐內部的電流 路徑構件及其周邊所配置的爐內構造物因此所產生之劣化 ，以提升結晶成長爐內部所配置的零件之耐久性。 爲了解決上述課題，本發明之利用C Z法形成半導體 單晶的半導體單晶製造裝置之第· 1樣態係利用一種將原料 融液收容在製造裝置結晶成長爐內部的ί甘堝，並且使好晶 接融於該原料融液表面後加以提拉，藉此於籽晶下方形成 單晶的切克勞斯基法來製造單晶者，其特徵在於：將加熱 器配置在該坩堝的周圍以加熱熔融前述坩堝所收容的原米斗 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） " 一 - -9- 574442 A7 ____ B7 _ 五、發明説明（7 ) (請先閱讀背面之注意事項再填寫本頁) ’並且將用來對該加熱器之發熱部供應電力的電流路徑設 置在前述製造裝置結晶成長爐內部，而且該加熱器之發熱 部的電性電阻値爲構成該電流路徑之電流路徑構件之電性 電阻値的9倍以上。 關於上述加熱器之發熱部的電性電阻値相對於上述電 流路徑構件之電性電阻値的比率上限値並沒有特別的限定 ’但是最好以1 0 0 0倍左右爲上限。此外，此電流路徑 構件之材料最好考慮1 5 0 0 °C左右之環境下的電性電阻 値再加以選定。 經濟部智慧財產局員工消費合作社印製 本發明之利用C Z法形成半導體單晶的半導體單晶製 造裝置之第2樣態係利用一種將原料融液收容在製造裝置 結晶成長爐內部的財堝，並且使好晶接融於該原料融液表 面後加以提拉，藉此於籽晶下方形成單晶的切克勞斯基法 來製造單晶者，其特徵在於：將加熱器配置在該坩堝的周 圍以加熱熔融前述坩堝所收容的原料，並且將用來對該加 熱器之發熱部供應電力的電流路徑設置在前述製造裝置結 晶成長爐內部，而且構成該電流路徑之電流路徑構件的電 性電阻率比該加熱器之發熱部的電性電阻率還低。 配置在單晶製造裝置之結晶成長爐內部的加熱器，亦 即加熱器之發熱部所消耗的電力P，根據歐姆法則，可利 用加熱器所通過之電流I與施加電壓V的積：p = I v = I 2 R ( R :加熱器之電性電阻値）來表示，加熱器的電性 電阻R越大，所通過的電流就越小，加熱器以外之電流路 徑的電力損失也越小。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " -10- 574442 A7 _______B7 五、發明説明（8) (請先閲讀背面之注意事項再填寫本頁) 此外’在使用導電性高的石墨材料作爲結晶成長爐內 部所配置的絕熱材料等構造物的材料，並且使結晶成長爐 內部保持5 0 0 h P a以下之低爐內壓來進行單晶生產的 情況下’爲了避免在接近加熱器之其他爐內構造物之間產 生放電或漏電’必須使施加於加熱器之電壓保持在1 〇 〇 V以下，最好保持在5 Ο V左右來進行作業。 然而’另一方面，在形成矽半導體單晶等時，必須使 作爲矽單晶之原料的多晶砂塊體在高溫下融解，因而必須 從加熱器取出1 5 0 kW以上之大電力。 另外，即使在完成多晶矽原料的熔融之後，爲了使矽 保持在融液的狀態，必須對加熱器持續供應5 0至1 0 0 k W的電力。 因此，爲了獲得以這種低電壓使原料成爲融液的大電 力，係使1 0 0 0至5 〇 Ο Ο A的電流通過結晶成長爐內 部所設置的加熱器，以進行半導體單晶之形成。 經濟部智慧財產局員工消費合作社印製 另一方面，加熱器會因爲原料融液所放出之含有 S i ◦等氧化物的氧化性氣體而受到腐鈾，而且加熱器本 身會發熱而成爲高溫狀態，因此係使用即使在高溫狀態下 耐腐蝕性仍高，且高融點的石墨製造而成。 此外，石墨是較適合的導體，且電流容易通過，半導 體單晶製造裝置所使用的加熱器之電阻値很小，爲8 m Ω 左右。 另一方面，爲了將加熱器立設在結晶成長爐內部，並 且爲了供應電力而配置在結晶成長爐的電流路徑構件，基 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^ Λ Λ ^ 經濟部智慧財產局員工消費合作社印製 574442 A7 _____B7 _____ 五、發明説明（9) 於上述理由，除了絕緣部分，其餘皆以石墨爲材料而製成 ’其具有與加熱器大致相同程度的電性電阻率，故電流路 徑本身顯示出5至1 m Ω的電阻値。 因此，在形成半導體單晶時有電力供應至加熱器時， 在這些電流路徑構件也會通過大電流，十數k W程度的電 力會在電流路徑構件發熱而消耗。 所以，爲了減少對此加熱器供應電力之電流路徑構件 所消耗的不必要電力，並且.減少無端的能源消耗，使電流 路徑構件的電阻更小，即可降低在電流路徑構件所消耗的 浪費電力。 因此，如果使用電性電阻率比單晶製造裝置之結晶成 長爐內所使用的加熱器之發熱部還低的石墨材料或石墨材 料以外的素材製作電流路徑構件，即可降低整個電流路徑 的電阻，該結果即可減少在電流路徑部分所消耗的電力， 以謀求無端電力損失之降低。 此時，形成電流路徑構件的材料最好係使用在 1 5 0 0 °C的高溫下，構成電流路徑以對於加熱器，亦即 對於加熱器之發熱部供應電力之設置於製造裝置結晶成長 爐內部的電流路徑構件的電性電阻率，相對於加熱器之發 熱部的電性電阻率爲1 / 1 0以下的材料作爲電流路徑構 件。 石墨材料的電性電阻率在1 5 0 0 °C之高溫下的電性 電阻率比常溫下還低，在常溫附近爲1 0 0 0至1 4 0 0 // Ω c m，在1 5 0 0 t：的高溫環境下雖只有少許差距， 本紙張尺度適用中®國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)574442 A7 B7 V. Description of the invention (彳) [Technical field to which the invention belongs] (Please read the notes on the back before filling out this page) The present invention relates to a method using the Czochralski Method (hereinafter also referred to as CZ method) for a semiconductor single crystal manufacturing device and manufacturing method, specifically, it relates to a heating part of a heater for heating raw materials in a crucible contained in a crystal growth furnace of a molten semiconductor single crystal manufacturing device. The power loss other than that is reduced to reduce the manufacturing cost and improve the reliability of the semiconductor single crystal manufacturing device and the method for manufacturing a semiconductor single crystal using the device. [Knowledge technology] Printed in the past by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, a method for manufacturing a semiconductor single crystal is known as a crucible configured by filling a semiconductor single crystal raw material into a crystal growth furnace of a semiconductor manufacturing device. In addition, a heater provided outside the crucible is used to melt the molten metal into a molten liquid, and then the seed crystal is fused with the raw material molten liquid to form a semiconductor single crystal under the seed crystal by the CZ method. In addition, in order to obtain semiconductor single crystals such as silicon or GaAs (gallium arsenide), the semiconductor single crystal formation technology using the CZ method has been widely used in industrial applications. Hereafter, the formation of silicon semiconductor single crystals is used as its An example is given to explain a conventional example of the present invention. A method for forming a silicon semiconductor single crystal by the CZ method is to first fill a crucible consisting of graphite on the outer side and quartz on the inside of a crystal growth furnace of a manufacturing device as a raw material, and grow the crystal After the inside of the furnace is filled with an inert gas such as argon (hereinafter referred to as Ar), a graphite heater provided around the outside of the crucible containing the raw material is used to heat the furnace to a high temperature of more than 1420 ° C to become Raw material melt. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -4-574442 A7 B7 V. Description of the invention (2) (Please read the notes on the back before filling this page) Then, When the temperature stabilizes to a temperature suitable for single crystal pulling, lower the seed crystal from above the melt to make the tip slightly immersed on the surface of the raw material melt, and when the temperature of the seed crystal is stable, make the seed crystal and the pot increase toward each other. Rotate in the direction and slowly pull upwards to form a semiconductor single crystal of silicon under the good crystal. At this time, in order to melt the polycrystalline silicon as a raw material of the semiconductor single crystal and avoid solidification of the raw material melt when the semiconductor single crystal is formed, a heater arranged around the outside of the crucible for holding the raw material melt will Electricity is constantly supplied to warm the raw material melt. In a semiconductor single crystal manufacturing device, especially a silicon semiconductor single crystal manufacturing device, in order to heat and melt the polycrystalline silicon as a raw material of the semiconductor single crystal and maintain it in a molten state, it must be at the melting point of silicon 1 4 2 0 Single crystals are formed by heating the inside of a crystal growth furnace in a high temperature environment above ° C. Therefore, almost all materials used for the structures arranged inside the crystal growth furnace of a semiconductor single crystal manufacturing device are graphite materials. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, graphite materials are materials that have a lower thermal expansion rate, better thermal shock resistance, and a higher melting point than metals. Therefore, it is most suitable as a material for structural members inside a crystal growth furnace that will be exposed to a high temperature environment. Compared with materials such as high melting point metal materials other than graphite, it is easier to perform shape processing and is cheaper. Therefore, a manufacturing device that needs to mass-produce a semiconductor single crystal for industrial use uses a large amount of components made of graphite. In addition, in order to heat the raw material melt, a heater arranged in a semiconductor single crystal crystal growth device also considers these characteristics of graphite, and most of them are composed of a graphite material. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) -5- 574442 A7 _____ B7 _ V. Description of the invention (3) (Please read the notes on the back before filling this page) In addition, single crystal manufacturing The crystal growth furnace of the device is complicatedly arranged for the purpose of maintaining the inside of the crystal growth furnace and protecting the wall of the crystal growth furnace, such as the heaters, crucibles, and heat-insulating materials formed of graphite described above. In the crystal growth furnace, the effect is fully effective, and the parts of the structure in the furnace are kept inside the crystal growth furnace of the manufacturing device with a slight gap between each other. Moreover, not only inside the crystal growth furnace of the single crystal manufacturing device, the furnace structure made of a large amount of graphite is arranged with a small gap, and the graphite material itself is a good conductor with high electrical conductivity, and It also has the characteristics of easy flow of electricity. Therefore, from the heater arranged around the crucible in the crystal growth furnace, or the current path member connecting the heater inside the crystal growth furnace and the metal electrode provided in the lower part of the crystal growth furnace, etc. In order to avoid damage to the structure in the furnace or electric failure due to current leakage or discharge, the voltage applied to the heater during single crystal growth is kept as low as possible to continue the operation. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In particular, when forming silicon semiconductor single crystals recently, in order to achieve the desired crystal quality and obtain semiconductor single crystals with stable characteristics, or to avoid growing inside the furnace from crystals Oxides such as Si 0 (silicon oxide) evaporated by the raw material melt adhere to the structure or the furnace wall in the furnace to maintain the operation for a long time. The inert gas inside the crystal growth furnace must be effectively discharged to the outside. Therefore, most of them use a method of reducing the pressure inside the crystal growth furnace to perform the operation. At this time, in order to avoid discharge in the furnace due to the application of voltage to heaters, current path members or electrodes through which current is passed, the paper size applied to the furnace applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 〇 574442 A7 B7 V. Description of the invention (4) (Please read the precautions on the back before filling this page) The voltage of the lower electrode will keep low voltage, generally a low voltage of about 5 0 V is applied to prevent A discharge occurs between structural members in the furnace made of graphite material, causing the heater to generate heat. [Disclosure of the invention] When forming a silicon semiconductor single crystal, the power required to melt the polycrystalline silicon is usually about 150 kW. After the polycrystalline silicon is melted, in order to maintain the raw material in a molten state when pulling the single crystal, it is necessary to continuously The heater supplies about 100 kW of power. Furthermore, in order to supply these electric powers at the above-mentioned low applied voltage, the current to be applied to the heater must be a maximum current of about 1000 to 5 0 0A. However, in order to melt the polycrystalline raw material and maintain it in the state of silicon melt, when such a large current is energized in the furnace of the manufacturing device, in addition to the heater, even the device for supplying power to the heater is used for crystal growth. The current path components inside the furnace also generate unnecessary heat. This is because both the current path member and the heater are formed of graphite, and have the same degree of resistivity as the heater. The heating of the current path components printed in the crystallization growth furnace of the manufacturing equipment of the Intellectual Property Bureau of the Ministry of Economic Affairs is not related to the heating of the heating raw material melt. If you do not pay attention, you will consume power in a plain way and form a single crystal. It must be avoided when possible. Especially when forming a sand semiconductor single crystal, the growth rate of the crystal sizing section is very slow, about 0.5 to 1 mm / mi η. Pulling up a sand single crystal, if the melting time of the raw material is included, it needs 20 to Such a long manufacturing time of 30 hours. Among them, it is necessary to supply about 1000k W of power to the heater. The paper standard is applicable to the Chinese Standard (CNS) A4 specification (21GX297 mm) '-574442 A7 B7 V. Description of the invention (5) (Please (Read the precautions on the back before filling this page) to continue heating, of course, current path components other than the heater will continue to consume unnecessary power, even if some power loss other than current path components such as heaters, Accumulation also promotes the manufacturing cost of single crystals or the deterioration of graphite parts in and around the heating parts. Therefore, it is best to avoid unnecessary power loss as much as possible to continue the operation. Furthermore, even if there is a slight loss of energy, it is necessary to consider environmental issues before carrying out production activities in order to mitigate the loss to produce energy without waste. In addition, recently, a single crystal manufacturing apparatus for a silicon semiconductor using the c Z method is used to increase the integration of semiconductor elements formed on a semiconductor wafer, or to increase the number of semiconductor elements obtained from a single semiconductor wafer to increase yield. Therefore, large-diameter semiconductor wafers with a diameter of more than 300 mm are increasingly required. In order to meet this demand, a manufacturing device capable of accommodating large-scale quartz crucibles with a diameter of more than 70 cm is being introduced as a mechanism for effectively producing large-diameter single crystals. The heater used in the single-crystal manufacturing device capable of accommodating large-caliber crucibles printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is proportional to the size of the crucible contained in the manufacturing device. As the size increases, the current path member forming the current path for supplying power to the heater must also be a large and long path. In addition, the amount of power consumed by the current path member becomes large, and it becomes a negligible plutonium. In addition, in the above-mentioned large-scale single crystal forming apparatus, the amount of heat generated outside the heating portion increases, so the deterioration of the structural members arranged in the furnace will also be accelerated, making the consumption of the structural members in the furnace more intense. The size of the single crystal paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8-574442 Α7 Β7 V. Description of the invention (6) (Please read the precautions on the back before filling this page) In the forming device, Compared with the medium-sized machine that produces crystals with a diameter of 6 inches or less, it shows that the structural parts arranged inside the crystal growth furnace are replaced more frequently. For this reason, it is particularly necessary to reduce the power loss in the current path for supplying electric power to the heater in the current main manufacturing device that pulls up semiconductor single crystals having a diameter exceeding 200 mm. In addition, in other semiconductor single crystal manufacturing equipment, if the production cost and the deterioration of the structure in the furnace are taken into consideration, it is also necessary to avoid wasting unnecessary power. It is best to manufacture semiconductor single crystal with as little energy loss as possible. Manufacturing device. The present invention was created by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics in view of such a problem. The purpose of the invention is to provide a semiconductor single crystal manufacturing device and a semiconductor single crystal manufacturing method. In a single crystal semiconductor single crystal manufacturing device, the resistance of a current path member that supplies electric current to a heater by making a current path from a metal electrode inside the crystal growth furnace to the heater is smaller than the resistance of the heater, and the supply can be suppressed. The heating of the current path through the current reduces the power consumption, and can also prevent the current path members inside the crystal growth furnace of the manufacturing device and the furnace structure arranged around it from deteriorating, so as to improve the configuration of the crystal growth furnace. Durability of parts. In order to solve the above-mentioned problems, the first aspect of the semiconductor single crystal manufacturing device for forming a semiconductor single crystal by the CZ method of the present invention uses a gantry pot that contains a molten raw material in the crystal growth furnace of the manufacturing device, and The crystal is melted on the surface of the raw material melt and then pulled to form a single crystal by the Cheklaussky method of forming a single crystal below the seed crystal, which is characterized in that a heater is arranged around the crucible to The size of the original rice paper contained in the crucible is heated and melted. The size of the paper used in the crucible is in accordance with the Chinese National Standard (CNS) A4 specification (210 × 297 mm). Note on the back, fill in this page again) 'And set the current path for supplying power to the heating part of the heater in the crystal growth furnace of the aforementioned manufacturing device, and the electrical resistance of the heating part of the heater The electric resistance 値 of the current path member of the current path is more than 9 times. There is no particular limitation on the upper limit 値 of the ratio of the electrical resistance 上述 of the heating portion of the heater to the electrical resistance 上述 of the current path member ′, but it is preferably an upper limit of about 1,000 times. In addition, the material of this current path component should be selected in consideration of the electrical resistance in the environment of about 150 ° C. The second aspect of printing the semiconductor single crystal manufacturing device of the present invention using the CZ method to form a semiconductor single crystal by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is to use a financial pot that contains a raw material melt in a crystal growth furnace of the manufacturing device. And the crystal is welded on the surface of the raw material melt and then pulled up, thereby forming a single crystal by the Czochralski method of forming a single crystal below the seed crystal, which is characterized in that a heater is arranged in the crucible The material contained in the crucible is heated and melted around, and a current path for supplying power to the heating portion of the heater is provided inside the crystal growth furnace of the manufacturing device, and the electrical properties of the current path members constituting the current path are provided. The resistivity is lower than the electrical resistivity of the heating portion of the heater. According to the Ohm's Law, the heater P, which is arranged inside the crystal growth furnace of the single crystal manufacturing device, is the power P consumed by the heater. The product of the current I passed by the heater and the applied voltage V can be used: p = I v = I 2 R (R: the electrical resistance of the heater 値). The larger the electrical resistance R of the heater, the smaller the current passed, and the smaller the power loss in the current path outside the heater. . This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) " -10- 574442 A7 _______B7 V. Description of the invention (8) (Please read the precautions on the back before filling this page) In addition 'in the use of conductive When a high-performance graphite material is used as a material for a structure such as a thermal insulation material disposed inside a crystal growth furnace, and the inside of the crystal growth furnace is maintained at a low furnace internal pressure of 500 h P a or lower for single crystal production. To avoid the occurrence of discharge or leakage between other structures in the furnace close to the heater, the voltage applied to the heater must be kept below 1000V, preferably around 50V for operation. However, on the other hand, when forming a silicon semiconductor single crystal or the like, it is necessary to dissolve a polycrystalline sand block as a raw material of the silicon single crystal at a high temperature. Therefore, it is necessary to take out a large electric power of 150 kW or more from the heater. In addition, even after the polycrystalline silicon raw material has been melted, in order to keep the silicon in a molten state, it is necessary to continuously supply a power of 50 to 100 kW to the heater. Therefore, in order to obtain a large amount of power for turning the raw material into a melt with such a low voltage, a current of 1000 to 5000 A is passed through a heater provided inside the crystal growth furnace to form a semiconductor single crystal. . Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. On the other hand, the heater will be subject to uranium decay due to the oxidizing gas containing oxides such as Si, etc. released by the raw material melt, and the heater itself will generate heat and become high temperature. Therefore, it is made of graphite with high corrosion resistance and high melting point even at high temperature. In addition, graphite is a suitable conductor, and the current is easy to pass through. The resistance 値 of the heater used in the semiconductor single crystal manufacturing device is very small, which is about 8 m Ω. On the other hand, in order to install the heater inside the crystal growth furnace and to arrange the current path member of the crystal growth furnace for power supply, the basic paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ^ Λ Λ ^ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 574442 A7 _____B7 _____ V. Description of the invention (9) For the above reasons, except for the insulating part, the rest are made of graphite as a material. Electrical resistivity, so the current path itself shows a resistance of 5 to 1 m Ω. Therefore, when electric power is supplied to the heater when the semiconductor single crystal is formed, a large current is also passed through these current path members, and electric power of about several tens of kilowatts is generated and consumed in the current path members. Therefore, in order to reduce unnecessary power consumed by the current path member that supplies power to the heater, and reduce unreasonable energy consumption, and make the resistance of the current path member smaller, the waste power consumed by the current path member can be reduced. . Therefore, if a graphite material or a material other than graphite is used to make the current path member with a lower electrical resistivity than that of a heater used in a crystal growth furnace of a single crystal manufacturing apparatus, the resistance of the entire current path can be reduced. As a result, the power consumed in the current path portion can be reduced in order to reduce the unreasonable power loss. At this time, the material for forming the current path member is preferably a crystal growth furnace provided in the manufacturing apparatus for forming a current path to supply power to the heater, that is, to the heating portion of the heater, at a high temperature of 150 ° C. The electrical resistivity of the internal current path member is a material having a specific electrical resistivity of 1/10 or less relative to the heating portion of the heater as the current path member. The electrical resistivity of graphite materials at a high temperature of 1 500 ° C is lower than that at normal temperature, and is 1 0 0 0 to 1 4 0 0 // Ω cm near normal temperature, at 1 5 0 0 t: Although there is only a small gap in the high temperature environment, the paper size is applicable to the National Standard (CNS) A4 size (210X297 mm) (Please read the precautions on the back before filling this page)

-12 - 574442 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（10) 但是電性電阻率較低，爲8 0 0至1 2 Ο Ο //Ω cm。相 對於此，一般融點較高的金屬等，通常在高溫下的電性電 阻率會比在常溫下的電性電阻率還高。 形成結晶成長爐內部之電流路徑的爐內構造物之材料 若是使用電性電阻率較低的構件，則最好考慮接近實際形 成單晶之結晶成長爐內部之環境溫度下的電性電阻率，來 選擇電流路徑構件的材料。 一般來說，若是C Z法的半導體單晶製造裝置，則對 於加熱器供應電力的電流路徑構件之材料，最好考慮 1 5 0 0 °C之環境下的電性電阻率，若使用此時之材料的 電性電阻率相對於加熱器之發熱部的電性電阻率爲1 / 1 0以下的材料作爲電流路徑構件之材料，則可盡量抑制 在電流路徑構件所消耗的電力。 這種材料可例舉出該一部分或全部以鉬（Μ 〇 )、鎢 (W )、钽（Ta)、鈮（Nb)爲主要成分的金屬或合 金。 如果是這些金屬或以這些金屬爲主要成分的合金，則 融點非常高，因而可用來製造大部分的半導體單晶，而且 1 5 0 0 °C下之高溫環境下的電性電阻率也在 1 Ο 0//Ω cm以下，比起石墨材料爲1/1 0以下之極 低電性電阻率，因此最適合用來作爲對單晶製造裝置之加 熱器供應電力的電流路徑構件之材料。 尤其，鉬、鎢、鉅、鈮係融點比矽高很多的金屬，因 此相當適合用在必須以1 4 2 0 °C以上之高溫加熱熔融的 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） -13- 574442 A7 B7 五、發明説明（彳彳） 矽半導體單晶之製造裝置。 (請先閱讀背面之注意事項再填寫本頁) 使用這種材料作爲電流路徑構件，可盡量抑制用來連 接結晶成長爐底部所設置之金屬電極與加熱器的電流路徑 所產生的不必要發熱，以避免無端的電力消耗，同時由於 電流路徑構件本身的發熱少，因此電流路徑構件及其周邊 的爐內構造物之劣化情況也會變少，因而亦可降低因爲爐 內構造物之劣化而更換的頻率。 本發明之利用c Z法形成半導體單晶的半導體單晶製 造裝置之第3樣態利用一種將原料融液收容在製造裝置結 晶成長爐內部的坩堝，並且使籽晶接融於該原料融液表面 後加以提拉，藉此於籽晶下方形成單晶的切克勞斯基法來 製造單晶者，其特徵在於：將加熱器配置在該坩堝的周圍 以加熱熔融前述坩堝所收容的原料，並且將用來對該加熱 器之發熱部供應電力的電流路徑設置在前述製造裝置結晶 成長爐內部，而且使構成該電流路徑之電流路徑構件所通 過的電流之電流密度比該加熱器之發熱部所通過的電流之 電流密度小。 經濟部智慧財產局員工消費合作社印製 使通過用來將設置在半導體單晶製造裝置之結晶成長 爐底部的金屬電極、以及用來加熱原料融液而設置在結晶 成長爐內部的加熱器加以連接而配置的電流路徑構件之電 流的密度（電流密度），比通過加熱器之發熱部的電流之 、密度還小，例如即使形成電流路徑構件之形狀，也可獲得 與本發明之半導體單晶製造裝置之第1及第2樣態相同的 效果。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _14麵 574442 A7 B7 五、發明説明（12) (請先閱讀背面之注意事項再填寫本頁) 此外’本發明當中係以將通過導體的電流（I )除以 與通過導體之電流方向直交的方向之導體剖面積S (cm2 )，即I/S(A/cm2)定義爲電流密度。 該理由在於，導體的電性電阻率R ( Ω )只要將電性 電阻率設爲ρ ( Ω c m )，將與電流通過之方向直交的方 向之導體面積，即剖面積設爲S (cm2)，並且將導體的 長度設爲1(cm)，電性電阻率R即可表示成R=px 1 / S，可知電性電阻率R與導體的剖面積S成反比。 這顯示出電流通過的導體之電性電阻値R，即使是相 同材質的導體，只要面積S爲2倍，電性電阻値就會成爲 1 / 2，藉由適當選擇結晶成長爐內供電流通過的電流路 徑構件的剖面積，也可減少在加熱器以外所消耗的電力。 此乃意味著，只要減少每個形成串聯電路之加熱器的 發熱部以及對其供應電流之電流路徑構件的單位剖面積所 通過的電流，亦即只要減少電流密度，亦可減少消耗電力 P ° 經濟部智慧財產4員工消費合作社印製 因此，以石墨等相同材質構成加熱器及電流路徑構件 時，只要使電流路徑構件之形狀形成電流路徑構件之剖面 積比加熱器之發熱部的剖面積還大的剖面積，即可抑制在 加熱器以外之發熱。 尤其，將電流路徑之電流密度設爲加熱器之發熱部所 通過之電流密度的1 / 2以下，即可將電流路徑構件所消 耗的不必要電力降低至一半以下。 而且，藉由使用這種構造來降低電流路徑之電力損失 本紙張尺度適用中國國家標準（CNS ) A4規格（210'〆297公釐） 574442 A 7 _ B7 _ 五、發明説明（13) (請先閱讀背面之注意事項再填寫本頁) ，對於在可收容大口徑之石英坩堝的半導體單晶製造裝置 之結晶成長爐下部尙有空間的大型半導體單晶製造裝置來 說，更可發揮效果。 另外，本發明當中所謂的電流路徑構件係指將半導體 單晶製造裝置之結晶成長爐下方部分所設置之用來將電流 供應至結晶成長爐內部的金屬電極、以及配設在用來保持 原料融液之坩堝周圍的加熱器加以連結，並且對於加熱器 供應電流而設置於結晶成長爐內部的爐內構造物，也就是 指用來保護結晶成長爐下方所設置之金屬電極的電極保護 構件、用來支撐立設加熱器，並且使電流通過的加熱器支 撐構件、以及將加熱器連接於加熱器支撐構件的加熱器電 極部等所構成的爐內構造物。 另外，藉由組合本發明之半導體單晶製造裝置之第1 至第3樣態，亦可形成電力損失更少的半導體單晶製造裝 置。 經濟部智慧財產局員工消費合作社印製 例如，從爐內構造物之配置來看，可成爲一種在用來 設置電流路徑構件之空間較少的部分使用鉬等電性電阻率 較低的高融點金屬，在具有可配置較大之爐內構造物之空 間的部分即使使用石墨製的構件，也可藉由增加其剖面積 來縮小電性電阻値，以降低電流路徑的消耗電力，且顧慮 到結晶成長爐內部之空間及零件成本的半導體單晶之製造 裝置。 再者，如果爲了對加熱器進行加熱所施加的電壓爲不 會在結晶成長爐內部發生放電的程度，則亦可相對增加用 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） -16- 574442 A 7 _ B7 ___ 五、發明説明（14> / (請先閱讀背面之注意事項再填寫本頁) 來加熱熔融原料融液之加熱器的電性電阻値，以降低在電 流路徑構件的電力消耗。此時，加熱器之電性電阻値最好 在1 0 m Ω以上。 提高加熱器之電性電阻値的方法有：使作爲加熱器之 材料的石墨材料之材質爲電性電阻率高的材質；增加加熱 器之發熱部的厚度、或增加加熱器開縫數目來延長發熱部 路徑；或是將通過發熱部之電流的路徑縮小以增加發熱部 之電阻値等方法。然而，加熱器之電性電阻値若考慮到上 述在結晶成長爐內部所產生的放電等，則最好降低至頂多 5 〇 m Ω左右。 本發明之半導體單晶的製造方法之特徵在於：使用上 述本發明之半導體單晶的製造裝置，並且利用切克勞斯基 法從該製造裝置之結晶成長爐內部之坩堝所收容的前述原 料融液提拉半導體單晶而加以製造。 線 如上所述，利用本發明之半導體單晶製造裝置來製造 半導體單晶，可形成電力損失少的半導體單晶。 經濟部智慧財產局員工消費合作社印製 【圖面之簡單說明】 第1圖係本發明半導體單晶製造裝置之一實施形態的 槪略剖視圖。 第2圖係本發明半導體單晶製造裝置中加熱器的槪略 說明圖，（a )係俯視槪略說明圖、（b )係側視槪略說 明圖。 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） -17 - 574442 A7 B7 五、發明説明（15) 【符號說明】 1〇 半導體單晶製造裝置 12 結晶成長爐 12a 爐壁 12b 底壁部分 1 4 a 石英坩堝 14b 石墨i甘渦 Γ 6 加熱器 1 6 a 加熱器發熱部 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1 8 絕 熱 材料 2 〇 坩 渦 底 座 2 2 坩堝 支 撐 軸 2 4 排 氣 管 2 6 金 屬 電 極 2 8 電 極 絕 緣 構 件 3 〇 電 極 保 護 構 件 3 2 加 熱 器 支 撐 構 件 3 4 加 熱 器 電 極 3 6 電 流 路 徑 構 件 3 8 下 部 絕 熱 材料 4 0 上 部 結 晶 成 長 爐 4 2 拉起用 繩 索 4 4 籽 晶 4 6 籽 晶 保持 具 訂 -線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -18 - 574442 A7 B7 五、發明説明（） 4 8 氣體導入管 5 〇 氣體流量控制裝置 (請先閱讀背面之注意事項再填寫本頁) s 半導體單晶 M 原料融液 【發明之最佳實施形態】 以下’參照所附圖面，同時舉出利用c z法形成矽單 晶的例子來說明本發明之實施形態，但是本發明並不限定 於此。例如，本發明之利用c Z法的半導體單晶製造裝置 當然亦可利用在一邊對原料融液施加電場，一邊形成半導 體單晶之使用 MCZ 法（Magnetic field applied Czochralski method ’磁場下提拉法）的半導體單晶之製造裝置以及半 導體單晶之製造方法，或是當然亦可適用在矽半導體單晶 以外’利用C Z法之例如形成G a A s等化合物半導體單 晶的半導體單晶之製造方法或製造裝置。 經濟部智慧財產局員工消費合作社印製 第1圖係本發明之半導體單晶製造裝置之一實施形態 的槪略剖視圖。在第1圖所示之半導體單晶製造裝置1 〇 的結晶成長爐1 2配置有：用來收容原料融液Μ的石英坩 堝1 4 a ;以及爲了保護此石英坩堝1 4 a而配置在石英 ί甘堝1 4 a外側的石墨i甘渦1 4 b。另外，本說明書中， 有時會單獨將石英坩堝14 a或將石英坩堝14 a及石墨 坩堝1 4 b合倂而簡稱爲坩堝。 在該石墨坩堝1 4 b的外側周圍又設置有用來加熱熔 融石英坩堝1 4 a內所收容的多晶原料，並且將其保持在 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -19- 574442 A7 B7 五、發明説明（17) 原料融液Μ狀態之石墨材料製成的加熱器1 6。 (請先閲讀背面之注意事項再填寫本頁) 要形成半導體單晶S時會對於供應至此石墨製加熱器 1 6的電力進行調整，然後使原料融液Μ之溫度成爲所希 望之値來形成半導體單晶S。在加熱器1 6與結晶成長爐 1 2之間，設置有用來保護金屬製結晶成長爐1 2之爐壁 1 2 a，以有效保溫結晶成長爐1 2內部的絕熱材料1 8 〇 另外，收容有原料融液Μ的石英坩堝1 4 a及石墨土甘 堝1 4 b係透過坩堝底座2 0，然後藉由坩堝支撐軸2 2 而配置在結晶成長爐1 2的大致中央處，並且利用坩堝支 撐軸2 2下端所安裝的未圖示坩堝軸驅動機構而可自由地 上下動作及旋轉。 經濟部智慧財產局員工消費合作社印製 另一方面，在結晶成長爐1 2的下部，由於必須在形 成半導體單晶時，一邊將來自原料融液Μ的蒸發物質排出 至結晶成長爐1 2外部，一邊進行半導體單晶S的形成， 因此透過電極絕緣構件2 8安裝有用來將回流至結晶成長 爐1 2內部的氬（A I·)氣等惰性氣體排出的排氣管2 4 ;以及用來對配設在結晶成長爐1 2內部的加熱器1 6供 應電力的金屬電極2 6。 金屬電極2 6係利用此電極絕緣構件2 8而成爲絕緣 狀態，並且配置成在結晶成長爐1 2不會發生電流漏電的 情形。金屬電極2 6可從結晶成長爐1 2外部所設置的未 圖示電力供應裝置接受電力的供應，並且將電力傳送至結 晶成長爐內的加熱器1 6。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 574442 A7 B7 _ ___ 五、發明説明（18) (請先閲讀背面之注意事項再填寫本頁) 另外，在金屬電極2 6還安裝有電極保護構件3 0， 可避免金屬電極2 6受到結晶成長爐1 2之高溫環境影響 ，藉由電極保護構件3 0，即使金屬電極2 6僅與作爲發 熱源的加熱器1 6稍微分開，也不會使融點比石墨低的金 屬過熱而熔融損壞。 再者，本發明之半導體單晶形成裝置1 0中，於電極 保護構件3 0的上部設有加熱器支撐構件3 2，該加熱器 支撐構件係用來將加熱器立設在結晶成長爐1 2內部，並 且構成用來供應電流的路徑。該加熱器支撐構件3 2係透 過該加熱器1 6下端所設置的加熱器電極3 4而連接於該 加熱器1 Θ 〇 本發明之半導體單晶製造裝置1 0係使電極保護構件 3 0、加熱器支撐構件3 2以及加熱器電極3 4構成對加 熱器1 6供應電力的電流路徑構件3 6。 經濟部智慧財產局員工消費合作社印製 加熱器1 6之發熱部的電性電阻値係電流路徑構件 3 6之電性電阻値的9倍以上。而且，電流路徑構件3 6 之電性電阻率比加熱器1 6之發熱部的電性電阻率還低， 最好設定在1 / 1 0以下。再者，通過電流路徑構件3 6 之電流的電流密度比通過加熱器1 6之發熱部的電流密度 還小，例如最好形成1 / 2以下。 加熱器16的材料最好使用石墨材料，構成電流路徑 構件3 6之一部分或全部的材料之主要成分則最好使用融 點比坩堝所收容之原料融液高，而且從鉬、鎢、鉅及鈮所 構成之群中所選擇之1種或2種以上所構成的金屬或合金 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） -21 - 574442 A7 B7 五、發明説明（19) 〇 (請先閱讀背面之注意事項再填寫本頁) 另外，在結晶成長爐1 2內部的底壁部分1 2 b配置 有用來保溫結晶成長爐下部，並且避免爐壁受到高溫之輻 射熱傷害的下部絕熱材料3 8。 然後，在結晶成長爐1 2的上部具有用來收容從原料 融液Μ拉起之半導體單晶S的上部結晶成長爐4 0，在上 部結晶成長爐4 0的上端設有用來放下或捲取拉起用繩索 4 2以提拉半導體單晶S的未圖示繩索捲取機構。 在由此繩索捲取機構所捲出的拉起用繩索4 2之前端 部具有用來保持籽晶4 4的籽晶保持具4 6，可將籽晶 4 4扣在此好晶保持具4 6而在籽晶下方形成半導體單晶 〇 另外，在上部結晶成長爐4 0設有用來將惰性氣體導 入結晶成長爐1 2內的氣體導入管4 8，可在半導體單晶 之形成條件下，利用氣體流量控制裝置5 0，將所需量之 惰性氣體導入結晶成長爐1 2。 Ν 接下來，對於利用本發明之半導體單晶製造裝置形成 經濟部智慧財產局員工消費合作社印製 矽半導體單晶的方法加以說明。 將多晶矽塊體裝入半導體單晶製造裝置1 〇之結晶成 長爐1 2內部所設置的石英坩堝1 4 a ，並且以惰性氣體 充滿結晶成長爐1 2內部之後，經過金屬電極2 6及電流 路徑構件3 6，從電力供應裝置將電力供應至石英坩堝 1 4 a及石墨坩堝1 4b周圍所設置的加熱器1 6，並且 將多晶矽原料加熱至矽之融點1 4 2 0 °C以上而成爲原料 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） 574442 A7 B7 五、發明説明（2〇) 融液Μ。 (請先閱讀背面之注意事項再填寫本頁) 在石英坩堝1 4 a內所有的多晶矽皆成爲原料融液μ 時，使融液溫度穩定成爲適合使半導體單晶成長的溫度， 並且放下拉起用繩索4 2，使籽晶4 4之前端部浸泡接融 於原料融液Μ的表面，然後使石英坩堝1 4 a及石墨坩堝 1 4 b及籽晶4 4分別朝不同方向旋轉，同時緩緩捲取拉 起用繩索4 2，藉此使半導體單晶S於籽晶4 4下方成長 〇 而且，在進行半導體單晶S之形成時，經常對加熱器 供應電力，使結晶成長爐1 2內的環境溫度保持在適合形 成半導體單晶的溫度，以避免原料融液Μ固化。 第2圖係本發明之半導體單晶製造裝置1 0中石墨製 加熱器1 6的槪略圖。加熱器呈圓筒狀，在下方安裝有用 來固定並且立設加熱器1 6的加熱器電極3 4。此加熱器 電極3 4係以螺絲栓入的方式扣合於加熱器1 6，可快速 地進行因爲破損或劣化所需的零件更換作業。 經濟部智慧財產局員工消費合作社印製 而且，當電流通過加熱器1 6時，在加熱器1 6之加 熱器發熱部1 6 a會發熱，並且使半導體單晶製造裝置 1 0之石英坩堝1 4 a所收容的多晶原料受到加熱而成爲 原料融液Μ 〇 . 此時，從加熱器電極3 4供應的電流（I )會如第2 圖（a )所示，順著加熱器1 6之圓筒形狀分成兩個方向 (I / 2 )，然後沿著第2圖（b )的加熱器發熱部 1 6 a蛇行而到達相對向配置的另一側加熱器電極3 4， 本紙張尺度適用中國國家標準（CNS ) A4規格（210'〆297公釐） -23- 574442 A7 B7 五、發明説明（21) 並且從加熱器電極3 4經由結晶成長爐1 2內的電流路徑 構件而回到電源。 4 (請先閲讀背面之注意事項再填寫本頁) 實施例 以下，舉出實施例來更爲具體地說明本發明，但本發 明並不限定於此。 (實施例1及比較例1 ) 要使用第1圖所示之裝置，將加熱原料融液所需之電 力加以削減時，爲了確認最好選擇何種製造裝置，使用由 電性電阻率比一般加熱器高2 5 %之素材所形成的高電阻 加熱器，來進行矽半導體單晶的製造。 此時，用來加熱原料的加熱器之電性電阻爲1 〇 m Ω ，比一般加熱器1 6電阻値高2 m Ω左右。構成對加熱器 1 6供應電力之電流路徑構件3 6的加熱器電極3 4、加 .熱器支撐構件3 2、電極保護構件3 0係由等向性的高純 度石墨材料所製成。 經濟部智慧財產局員工消費合作社印製 接下來，在半導體單晶的形成過程中，將直徑6 0 c m的石英坩堝1 4 a放入半導體單晶製造裝置1 〇內， 並且將1 0 0 k g之多晶矽塊體裝入此坩堝，然後使加熱 器發熱而加以熔解，接著控制施加電流控制，使施加於加 熱器1 6的電力成爲10 〇 kW，以形成直徑2 0 Omm 的半導體單晶S。 接下來，測量在形成半導體單晶S時，構成電流路徑 構件3 6之加熱器電極3 4、加熱器支撐構件3 2兩個構 本紙張尺度通用中國國家標準（CNS ) A4規格（210X297公釐） "" ' -24- 574442 A7 B7 22} 五、發明説明（ 件所消耗的電力，結果如表1所示 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中.國國家標準（CNS ) A4規格（210 X 297公釐） -25- 574442 A7 B7 五、發明説明（23)-12-574442 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (10) However, the electrical resistivity is low, which is 8 0 0 to 1 2 Ο 〇 // Ω cm. In contrast, metals with higher melting points generally have higher electrical resistivity at higher temperatures than electrical resistivity at normal temperature. If the material of the furnace structure that forms the current path inside the crystal growth furnace is a member with a low electrical resistivity, it is best to consider the electrical resistivity at the ambient temperature close to the inside of the crystal growth furnace that actually forms a single crystal. To choose the material of the current path component. In general, if it is a semiconductor single crystal manufacturing device using the CZ method, it is best to consider the electrical resistivity in an environment of 1 500 ° C for the material of the current path member that the heater supplies power to. As the material of the current path member, the electrical resistivity of the material is less than 1/10 of the electrical resistivity of the heating portion of the heater, so that the power consumed by the current path member can be suppressed as much as possible. Examples of such a material include metals or alloys whose main components are molybdenum (MO), tungsten (W), tantalum (Ta), and niobium (Nb). If these metals or alloys containing these metals are the main components, the melting point is very high, so they can be used to make most semiconductor single crystals, and the electrical resistivity in high temperature environments at 1 500 ° C is also Less than 1 0 0 // Ω cm, compared with graphite materials, the electrical resistivity is extremely low than 1/1 0. Therefore, it is most suitable as a material for a current path member that supplies power to a heater of a single crystal manufacturing device. In particular, molybdenum, tungsten, giant, and niobium series metals have a much higher melting point than silicon, so they are suitable for those that must be heated and melted at a high temperature of more than 142 ° C (please read the precautions on the back before filling this page) ) This paper size is applicable. National National Standard (CNS) A4 specification (210X297mm) -13- 574442 A7 B7 V. Description of the invention (i) Manufacturing device for silicon semiconductor single crystal. (Please read the precautions on the back before filling this page) Using this material as a current path component can minimize the unnecessary heat generated by the current path used to connect the metal electrode and heater provided at the bottom of the crystal growth furnace. To avoid unreasonable power consumption, and because the current path member itself generates less heat, the deterioration of the current path member and the surrounding furnace structure will also be reduced, so it can also reduce replacement due to deterioration of the furnace structure. Frequency of. In the third aspect of the semiconductor single crystal manufacturing apparatus for forming a semiconductor single crystal by using the cZ method of the present invention, a crucible containing a raw material melt in a crystal growth furnace of the manufacturing apparatus is used, and the seed crystal is melted in the raw material melt. The surface is pulled up to form a single crystal by the Czochralski method of forming a single crystal below the seed crystal, which is characterized in that a heater is arranged around the crucible to heat and melt the raw material contained in the crucible. And a current path for supplying power to the heating part of the heater is provided inside the crystal growth furnace of the manufacturing device, and the current density of the current passed by the current path member constituting the current path is greater than that of the heater The current density of the current passing through the part is small. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a connection between a metal electrode provided at the bottom of a crystal growth furnace for a semiconductor single crystal manufacturing device and a heater provided inside the crystal growth furnace for heating a raw material melt. The density (current density) of the current flowing through the current path member is smaller than the density of the current passing through the heating portion of the heater. For example, even if the shape of the current path member is formed, the semiconductor single crystal manufactured by the present invention can be obtained. The first and second aspects of the device have the same effect. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _14 side 574442 A7 B7 V. Description of the invention (12) (Please read the precautions on the back before filling out this page) In addition, in the present invention, The current through the conductor (I) divided by the cross-sectional area S (cm2) of the conductor in a direction orthogonal to the direction of the current through the conductor, that is, I / S (A / cm2) is defined as the current density. The reason is that, as long as the electrical resistivity R (Ω) of the conductor is ρ (Ω cm), the conductor area in a direction orthogonal to the direction in which the current passes, that is, the cross-sectional area is S (cm2) And if the length of the conductor is set to 1 (cm), the electrical resistivity R can be expressed as R = px 1 / S, and it can be known that the electrical resistivity R is inversely proportional to the cross-sectional area S of the conductor. This shows that the electrical resistance 値 R of the conductor through which the current passes, even if it is a conductor of the same material, as long as the area S is 2 times, the electrical resistance 値 will become 1/2. By properly selecting the crystal growth furnace for the current to pass through The cross-sectional area of the current path member can also reduce the power consumed outside the heater. This means that as long as the current per unit cross-sectional area of the heating section of each heater forming a series circuit and the current path member supplying current to it is reduced, that is, as long as the current density is reduced, the power consumption P ° can also be reduced. Printed by the Intellectual Property of the Ministry of Economic Affairs 4 Consumer Cooperatives. Therefore, when the heater and the current path member are made of the same material such as graphite, the cross-sectional area of the current path member is larger than the cross-sectional area of the heating part of the heater. A large cross-sectional area can suppress heat generation outside the heater. In particular, by setting the current density of the current path to less than 1/2 of the current density passed by the heating portion of the heater, the unnecessary power consumed by the current path member can be reduced to less than half. In addition, by using this structure to reduce the power loss of the current path, the paper size applies the Chinese National Standard (CNS) A4 specification (210'〆297 mm) 574442 A 7 _ B7 _ V. Description of the invention (13) (Please Please read the precautions on the back before filling this page). For large-scale semiconductor single crystal manufacturing equipment with space in the lower part of the crystal growth furnace of the semiconductor single crystal manufacturing equipment that can accommodate large-diameter quartz crucibles, it will be more effective. In addition, in the present invention, the so-called current path member refers to a metal electrode provided in a lower portion of a crystal growth furnace of a semiconductor single crystal manufacturing apparatus for supplying a current to the inside of the crystal growth furnace, and a metal electrode disposed to maintain melting of raw materials. The heater around the liquid crucible is connected, and the furnace structure that is provided inside the crystal growth furnace by supplying current to the heater is an electrode protection member for protecting metal electrodes provided below the crystal growth furnace. Furnace structures, such as a heater support member that supports a standing heater and passes an electric current, and a heater electrode portion that connects the heater to the heater support member, are supported. In addition, by combining the first to third aspects of the semiconductor single crystal manufacturing apparatus of the present invention, a semiconductor single crystal manufacturing apparatus with less power loss can also be formed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Point metal. Even if a graphite member is used in a part with a space where a large furnace structure can be arranged, the electrical resistance can be reduced by increasing its cross-sectional area to reduce the power consumption of the current path. Manufacturing device for semiconductor single crystal with space and parts cost inside the crystal growth furnace. In addition, if the voltage applied to heat the heater is such that the electric discharge will not occur inside the crystal growth furnace, the paper size can also be relatively increased. The national standard (CNS) A4 specification (210X297) -16) 574442 A 7 _ B7 ___ V. Description of the invention (14 > / (Please read the notes on the back before filling in this page) to heat the electrical resistance of the heater of the molten raw material melt to reduce the electrical resistance The power consumption of the current path member. At this time, the electrical resistance 値 of the heater is preferably more than 10 m Ω. The method of increasing the electrical resistance 加热器 of the heater is: The material of the graphite material as the material of the heater is Materials with high electrical resistivity; increase the thickness of the heating part of the heater or increase the number of openings in the heater to extend the path of the heating part; or reduce the path of the current through the heating part to increase the resistance of the heating part 値However, if the electric resistance 加热器 of the heater is taken into consideration of the above-mentioned discharge generated in the crystal growth furnace, it is preferably reduced to at most about 50 m Ω. The semiconductor single crystal of the present invention The manufacturing method is characterized in that the semiconductor single crystal manufacturing device of the present invention is used, and the semiconductor single crystal is pulled from the raw material melt contained in the crucible inside the crystal growth furnace of the manufacturing device by using the Cheklaussky method, and As described above, using the semiconductor single crystal manufacturing apparatus of the present invention to produce a semiconductor single crystal can form a semiconductor single crystal with low power loss. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics [Simplified description of the drawing] FIG. 1 is a schematic cross-sectional view of an embodiment of a semiconductor single crystal manufacturing apparatus of the present invention. FIG. 2 is a schematic explanatory diagram of a heater in the semiconductor single crystal manufacturing apparatus of the present invention, (a) is a schematic plan view of a plan view, (B) This is a schematic diagram of the side view. The paper size is applicable. National Standard (CNS) A4 (210X297 mm) -17-574442 A7 B7 V. Description of the invention (15) [Symbol description] 10 Semiconductors Single crystal manufacturing device 12 Crystal growth furnace 12a Furnace wall 12b Bottom wall portion 1 4 a Quartz crucible 14b Graphite vortex Γ 6 Heater 1 6 a Heater heating section (please first (Please read the notes on the back and fill in this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 8 Thermal insulation material 2 〇 Crucible base 2 2 Crucible support shaft 2 4 Exhaust pipe 2 6 Metal electrode 2 8 Electrode insulation member 3 〇 Electrode protection member 3 2 Heater support member 3 4 Heater electrode 3 6 Current path member 3 8 Lower thermal insulation material 4 0 Upper crystal growth furnace 4 2 Pulling rope 4 4 Seed crystal 4 6 Seed crystal holder Staple-line paper Standards are applicable to China National Standard (CNS) A4 specifications (210X297 mm) -18-574442 A7 B7 V. Description of the invention () 4 8 Gas introduction pipe 5 〇 Gas flow control device (Please read the precautions on the back before filling this page ) s Semiconductor single crystal M raw material melt [Best embodiment of the invention] Hereinafter, referring to the drawings, an example of forming a silicon single crystal by the cz method will be given to explain the embodiment of the present invention, but the present invention is not Limited to this. For example, of the semiconductor single crystal manufacturing device using the c Z method of the present invention, it is of course possible to use the MCZ method (Magnetic field applied Czochralski method 'under magnetic field pull method') to form a semiconductor single crystal while applying an electric field to a raw material melt. Semiconductor single crystal manufacturing device and semiconductor single crystal manufacturing method, or of course, it can also be applied to a method of manufacturing a semiconductor single crystal using a CZ method such as forming a compound semiconductor single crystal such as G a A s other than a silicon semiconductor single crystal. Or make a device. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. FIG. 1 is a schematic cross-sectional view of one embodiment of a semiconductor single crystal manufacturing apparatus of the present invention. The crystal growth furnace 12 of the semiconductor single crystal manufacturing apparatus 10 shown in FIG. 1 is provided with a quartz crucible 14 a for containing the raw material melt solution M, and a quartz crucible 14 a for protecting the quartz crucible 14 a. The graphite i Gan vortex 1 4 b outside the Gan pot 1 4 a. In addition, in this specification, the quartz crucible 14 a or the quartz crucible 14 a and the graphite crucible 14 b may be combined and referred to simply as a crucible. Polycrystalline raw materials contained in the fused silica crucible 14a are set around the outer side of the graphite crucible 14b, and it is kept at the size of this paper in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) ) -19- 574442 A7 B7 V. Description of the invention (17) The heater 16 made of graphite material in the molten state M of the raw material. (Please read the precautions on the back before filling this page.) To form a semiconductor single crystal S, the power supplied to this graphite heater 16 is adjusted, and then the temperature of the raw material melt M is formed as desired. Semiconductor single crystal S. Between the heater 16 and the crystal growth furnace 12, a furnace wall 12 a for protecting the metal crystal growth furnace 12 2 is provided to effectively maintain the heat insulation material 1 8 inside the crystal growth furnace 12. The quartz crucible 14 a with the raw material melt M and the graphite clay pot 14 b pass through the crucible base 20 and are arranged at the approximate center of the crystal growth furnace 12 by the crucible support shaft 2 2. The crucible is used. A crucible shaft drive mechanism (not shown) attached to the lower end of the support shaft 22 can freely move up and down and rotate. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. On the other hand, in the lower part of the crystal growth furnace 12, it is necessary to discharge the evaporated substance from the raw material melt M to the outside of the crystal growth furnace 12 when forming a semiconductor single crystal While forming the semiconductor single crystal S, an exhaust pipe 2 4 for discharging an inert gas such as argon (AI ·) gas flowing back into the crystal growth furnace 12 is installed through the electrode insulating member 28; and The metal electrode 26 supplies electric power to the heater 16 arranged inside the crystal growth furnace 12. The metal electrode 26 is insulated by the electrode insulating member 28, and is arranged so that current leakage does not occur in the crystal growth furnace 12. The metal electrode 26 can receive power supply from a power supply device (not shown) provided outside the crystal growth furnace 12 and transmit the power to a heater 16 in the crystal growth furnace. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -20- 574442 A7 B7 _ ___ V. Description of the invention (18) (Please read the precautions on the back before filling this page) In addition, the metal electrode 2 6 is also equipped with an electrode protection member 3 0 to prevent the metal electrode 2 6 from being affected by the high temperature environment of the crystal growth furnace 12. With the electrode protection member 30, the metal electrode 2 6 is only connected to the heater 1 as a heat source. 6Separate slightly, it will not cause metal with lower melting point than graphite to overheat and melt and damage. Furthermore, in the semiconductor single crystal forming apparatus 10 of the present invention, a heater support member 32 is provided on an upper portion of the electrode protection member 30, and the heater support member is used to set the heater upright in the crystal growth furnace 1. 2 inside, and constitute a path for supplying current. The heater support member 3 2 is connected to the heater 1 through a heater electrode 34 provided at the lower end of the heater 16. The semiconductor single crystal manufacturing apparatus 10 of the present invention is an electrode protection member 30, The heater support member 32 and the heater electrode 34 constitute a current path member 36 that supplies power to the heater 16. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The electrical resistance of the heating part 16 of the heater 16 is more than 9 times the electrical resistance of the current path member 36. In addition, the electrical resistivity of the current path member 36 is lower than the electrical resistivity of the heating portion of the heater 16 and is preferably set to 1/10 or less. The current density of the current passing through the current path member 36 is smaller than the current density passing through the heating portion of the heater 16, and it is preferably, for example, 1/2 or less. The material of the heater 16 is preferably a graphite material. The main component of a part or all of the material constituting the current path member 36 is preferably a melting point higher than that of the raw material melt contained in the crucible. One or two or more metals or alloys selected from the group consisting of niobium. The paper size is applicable. National Standards (CNS) A4 (210X297 mm) -21-574442 A7 B7 V. Description of the invention (19) 〇 (Please read the precautions on the back before filling in this page) In addition, the bottom wall part 1 2 b inside the crystal growth furnace 12 is equipped to keep the lower part of the crystal growth furnace and prevent the furnace wall from being exposed to high temperature radiant heat Injury to the lower insulation material 3-8. Then, an upper crystal growth furnace 40 is provided on the upper part of the crystal growth furnace 12 to accommodate the semiconductor single crystal S pulled up from the raw material melt solution M, and an upper end of the upper crystal growth furnace 40 is provided for lowering or winding. The pulling rope 42 is used to pull up a rope winding mechanism (not shown) of the semiconductor single crystal S. A seed crystal holder 4 6 for holding the seed crystal 4 4 is provided at the front end of the pull-up rope 4 2 rolled up by the rope winding mechanism, and the seed crystal 4 4 can be buckled to the good crystal holder 4 6. A semiconductor single crystal is formed below the seed crystal. In addition, a gas introduction tube 48 for introducing an inert gas into the crystal growth furnace 12 is provided in the upper crystal growth furnace 40, which can be used under the conditions for forming a semiconductor single crystal. The gas flow control device 50 introduces a required amount of inert gas into the crystal growth furnace 12. Ν Next, a method for forming a silicon semiconductor single crystal by using the semiconductor single crystal manufacturing device of the present invention to form an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs will be described. The polycrystalline silicon block is loaded into a quartz crucible 14 a inside a crystal growth furnace 12 of a semiconductor single crystal manufacturing apparatus 10, and the inside of the crystal growth furnace 12 is filled with an inert gas, and then passes through a metal electrode 26 and a current path. The component 36 supplies electric power from the power supply device to the heaters 16 placed around the quartz crucible 14 a and the graphite crucible 14 b, and heats the polycrystalline silicon raw material to a melting point of silicon above 1 2 0 ° C to become Raw materials The paper size is applicable. National National Standard (CNS) A4 specification (210X297 mm) 574442 A7 B7 V. Description of the invention (2) Melt solution M. (Please read the precautions on the back before filling this page.) When all the polycrystalline silicon in the quartz crucible 1 4 a becomes the raw material melt μ, stabilize the melt temperature to a temperature suitable for the growth of the semiconductor single crystal, and put it down for use. Rope 4 2 so that the front end of seed crystal 4 4 is immersed and melted on the surface of raw material melt M, and then rotate quartz crucible 1 4 a, graphite crucible 1 4 b, and seed crystal 4 4 in different directions, and slowly The winding single rope 4 2 is grown to grow the semiconductor single crystal S below the seed crystal 4 4. Furthermore, when forming the semiconductor single crystal S, power is often supplied to the heater to cause the crystal growth in the crystal growth furnace 12 to The ambient temperature is maintained at a temperature suitable for forming a semiconductor single crystal to avoid solidification of the raw material melt M. Fig. 2 is a schematic diagram of a graphite heater 16 in a semiconductor single crystal manufacturing apparatus 10 of the present invention. The heater has a cylindrical shape, and a heater electrode 3 4 for fixing and standing the heater 16 is installed below. The heater electrodes 3 and 4 are bolted to the heater 16 to fasten the replacement of parts required due to damage or deterioration. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. When a current is passed through the heater 16, the heater heating portion 16a of the heater 16 generates heat and causes the quartz crucible 1 of the semiconductor single crystal manufacturing apparatus 10 The polycrystalline raw material contained in 4 a is heated to become the raw material melt solution M. At this time, the current (I) supplied from the heater electrode 34 will follow the heater 16 as shown in FIG. 2 (a). The cylindrical shape is divided into two directions (I / 2), and then snakes along the heater heating part 16 a of Fig. 2 (b) to reach the opposite side of the heater electrode 3 4. Applicable to China National Standard (CNS) A4 specification (210'〆297 mm) -23- 574442 A7 B7 V. Description of the invention (21) And return from heater electrode 34 through current path member in crystal growth furnace 12 To power. 4 (Please read the precautions on the reverse side before filling out this page) EXAMPLES The present invention will be described more specifically with reference to the following examples, but the present invention is not limited to this. (Example 1 and Comparative Example 1) When using the device shown in Figure 1 to reduce the power required to heat the raw material melt, in order to confirm which manufacturing device is best to choose, the electrical resistivity ratio is generally used. A high-resistance heater made of 25% higher heater material for the manufacture of silicon semiconductor single crystals. At this time, the electrical resistance of the heater used to heat the raw material is 10 m Ω, which is about 2 m Ω higher than the resistance of the general heater 16. The heater electrode 3, which constitutes a current path member 36 for supplying power to the heater 16, the heater support member 3, and the electrode protection member 30, are made of an isotropic high-purity graphite material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, in the process of forming a semiconductor single crystal, a quartz crucible 14 a with a diameter of 60 cm is placed in a semiconductor single crystal manufacturing device 100, and 100 kg A polycrystalline silicon block was put into the crucible, and the heater was heated to be melted, and then the applied current control was controlled so that the electric power applied to the heater 16 was 100 kW to form a semiconductor single crystal S having a diameter of 20 mm. Next, when forming the semiconductor single crystal S, measure the heater electrode 3, which constitutes the current path member 36, and the heater support member 3, which are two paper sizes. The general Chinese National Standard (CNS) A4 specification (210X297 mm) ） &Quot; " '-24- 574442 A7 B7 22} V. Description of the invention (the power consumed by the items, the results are shown in Table 1 (please read the precautions on the back before filling this page) Staff of the Intellectual Property Bureau The paper size printed by the consumer cooperative is applicable. The national standard (CNS) A4 specification (210 X 297 mm) -25- 574442 A7 B7 V. Description of the invention (23)

表 一般電阻之 加熱器 (比較例1) 電阻提高後之 加熱器 (實施例1) 加熱器電阻値 8.0ιηΩ ΙΟ.ΟιηΩ 電流値 3536Α 3162Α 加熱器支撐構件•加 熱器電極電阻値 1.05mQ 加熱器支撐構件•加 熱器電極消耗電力 13.1Kw 10.5kW (請先閲讀背面之注意事項再填寫本頁)A heater with a general resistance (Comparative Example 1) A heater with an increased resistance (Example 1) Heater resistance 値 8.0ιηΩ ΙΟΟΟηηΩ Current 値 3536Α 3162Α Heater support member • Heater electrode resistance 値 1.05mQ Heater support Components and heater electrode power consumption 13.1Kw 10.5kW (Please read the precautions on the back before filling this page)

表1中 倂計載了利用一般所使 經濟部智慧財產局員工消費合作社印製 低之加熱器（一般電阻之加熱器）來製 結果（比較例1 )、以及使用電阻提高 半導體單晶時的實驗結果（實施例1 ) 加熱器發熱部的電阻値爲電流路徑構件 倍，在比較例1中，加熱器發熱部的電 件之電阻値的7 . 6倍。 用之電 造半導 後之加 。在實 之電阻 阻値爲 另外，也記載了在使用一般電阻之加熱器 單晶時，除了加熱器之電性電阻値之外，製造 條件也是使用與電阻以提高之加熱器來形成半 相同的條件來進行單晶形成的資料。 該結果，在半導體單晶形成時，加熱器1 電力無論在任何加熱器1 6皆同樣爲1 0 〇 k 性電阻値較 體單晶時的 熱器來形成 施例1中， 値的9 . 5 電流路徑構 製造半導體 裝置及製造 導體單晶時 6所消耗的 W，關於構 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -26 - 574442 A7 B7 ____ 五、發明説明（24) (請先閱讀背面之注意事項再填寫本頁) 成電流路徑構件3 6的加熱器電極3 4、加熱器支撐構件 3 2所消耗的電力，使用電阻提高之加熱器者爲 2·6kW，大約低2%左右。 這是因爲在使用電性電阻値高的加熱器之半導體單晶 之形成裝置中，爲了獲得與一般電阻之加熱器相同的發熱 能源所通電的電流會變少，最後加熱器以外之加熱器電極 及加熱器支撐構件等電流路徑構件所消耗的電力便減少， 使整個半導體單晶製造裝置所消耗的電力減少。 因此，在形成單晶時，爲了減少半導體單晶製造裝置 1 0所使用之電力，只要增加加熱器1 6之電性電阻，同 時縮小加熱器1 6以外之電流路徑構件之電性電阻，即可 減少消耗電力。 然而，加熱器1 6係很容易影響半導體單形成環境的 爐內構造物，由於大幅改變材質或形狀，對於結晶之成長 條件或品質會造成很大的影響，故不是很理想。 經濟部智慧財產局員工消費合作社印製 因此，爲了更爲減少半導體單晶製造裝置1 0內之消 耗電力，檢討了一種藉由改變用來將電流傳送至加熱器 1 6之電流路徑構件3 6，即加熱器電極3 4、加熱器支 撐構件3 2以及電極保護構件3 0之材質或形狀來降低消 耗電力的方法。 (實施例2 ) 檢討了電性電阻値小，且可耐比矽融點還高之溫度的 素材之後，發現有鉬、鎢、鉅、鈮等，這些金屬的融點比 本紙張尺度適用中.國國家標準（CNS ) A4規格（210 X297公釐） -27 - 574442 A7 B7 i、發明説明（ 25; 砂高很多，而且即使在半導體單晶之成長環境下，某 1 5 〇 〇 °c之高溫的電性電阻率也在1 〇 〇 // Ω c m以下 ’爲加熱器之素材，即石墨材料的1 / 1 〇左右以下之値 ’非常適合作爲半導體單晶製造裝置內所使用的電流路徑 構件之材料。 這兩種鉬、鎢、鉅等高融點金屬以及加熱器用石墨材 料之各個溫度下的電性電阻率顯示於表2。 表2 材料的種類 高融點材料 (實施例2) 加熱器用石墨 (比較例2) 電性電阻率 電性電阻率 (常溫） (1500。。） [μ Qcm] [μ Qcm] 石墨材料（A) 1260 1030 石墨材料（B) 1350 1030 鉬 5.7 46 鉅 13.5 71 鶴 5.5 50 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 上述高融點金屬中，使用鉬來製作加熱器電極3 4輿 加熱器支撐構件3 2。將此以鉬爲材料的加熱器電極3 4 與加熱器支撐構件3 2使用在第1圖之半導體單晶製造裝 置1 0，並且進行矽半導體單晶的製造。此時之加熱器電 極3 4與加熱器支撐構件3 2間的電性電阻値爲〇 · 〇 7 m Ω。另外，電極保護構件仍爲石墨製品，但使用電性電 阻値爲1 〇 m Ω的加熱器。本實施例中，加熱器發熱部的 抵張尺度逍用中國國家標準（CNS ) A4規格(210X297公釐） -28- 574442Table 1 below shows the results obtained by using a low-heater (common resistance heater) printed by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (comparative example 1) and the results obtained by using a resistor to increase the semiconductor single crystal. Experimental result (Example 1) The resistance 値 of the heating portion of the heater is twice as large as the current path member. In Comparative Example 1, the resistance 値 of the electrical components of the heating portion of the heater is 7.6 times. Add it after using the electricity to make a semiconductor. The actual resistance is also described. In addition, when using a single crystal heater with ordinary resistance, in addition to the electrical resistance of the heater, the manufacturing conditions are also semi-same as using a heater with an increased resistance. Conditions to perform single crystal formation data. As a result, when the semiconductor single crystal is formed, the electric power of the heater 1 is the same as 100 ohmic resistance regardless of any of the heaters 16, which is larger than that of a single crystal heater. 5 W consumed in the current path structure manufacturing of semiconductor devices and conductor single crystals. About the size of this paper, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable. -26-574442 A7 B7 ____ V. Description of the invention (24) (Please read the precautions on the back before filling out this page) The heater electrode 3 4 which is the current path member 3 6 and the heater support member 3 2 are the electric power consumed by the heater with increased resistance: 2 · 6kW, about 2% lower. This is because in a semiconductor single crystal formation device using a heater with a high electrical resistance, the current that is applied to obtain the same heating energy as a general resistance heater will be reduced. Finally, heater electrodes other than the heater will be used. The power consumed by current path members such as the heater support member and the like is reduced, and the power consumed by the entire semiconductor single crystal manufacturing device is reduced. Therefore, when forming a single crystal, in order to reduce the power used in the semiconductor single crystal manufacturing device 10, as long as the electrical resistance of the heater 16 is increased, and the electrical resistance of the current path member other than the heater 16 is reduced, that is, Can reduce power consumption. However, the heater 16 series can easily affect the structure inside the furnace, and the material or shape is greatly changed, which will greatly affect the growth conditions and quality of the crystal, which is not ideal. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In order to further reduce the power consumption in the semiconductor single crystal manufacturing device 10, a current path member 3 6 for changing the current to the heater 16 was reviewed. That is, the material or shape of the heater electrode 34, the heater support member 32, and the electrode protection member 30 to reduce power consumption. (Example 2) After reviewing materials with low electrical resistance and resistance to temperatures higher than the melting point of silicon, it was found that molybdenum, tungsten, giant, niobium, etc. have melting points higher than those of this paper China National Standard (CNS) A4 specification (210 X297 mm) -27-574442 A7 B7 i. Description of the invention (25; sand is much higher, and even in the growth environment of semiconductor single crystal, a certain 1 500 ° c The electrical resistivity at high temperature is also below 1000 // Ω cm. 'It is the material of the heater, that is, the graphite material is about 1/10 or less.' It is very suitable as a current used in a semiconductor single crystal manufacturing device. The material of the path member. The electrical resistivity of these two types of high melting point metals such as molybdenum, tungsten, and giant and graphite materials for heaters are shown in Table 2. Table 2 Types of materials High melting point materials (Example 2 ) Graphite for heater (Comparative Example 2) Electrical resistivity Electrical resistivity (room temperature) (1500 ...) [μ Qcm] [μ Qcm] Graphite material (A) 1260 1030 Graphite material (B) 1350 1030 Molybdenum 5.7 46 Giant 13.5 71 Crane 5.5 50 (Please read the back first Note: Please fill in this page again.) The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the above-mentioned high-melting-point metals using molybdenum to make heater electrodes 3 4 and heater support members 3 2. This heater is made of molybdenum The electrode 3 4 and the heater support member 32 are used in the semiconductor single crystal manufacturing apparatus 10 shown in FIG. 1 to manufacture a silicon semiconductor single crystal. At this time, the space between the heater electrode 34 and the heater support member 32 The electrical resistance 値 is 0.07 m Ω. In addition, the electrode protection member is still a graphite product, but a heater having an electrical resistance 値 10 m Ω is used. In this embodiment, the resistance scale of the heating part of the heater Easy to use Chinese National Standard (CNS) A4 specification (210X297 mm) -28- 574442

B 五、發明説明（26) 電阻値爲電流路徑構件之電阻値的1 4 2 . 9倍。 利用此製造裝置1 0，將直徑6 0 c m的石英坩堝 1 4 a放進結晶成長爐內部，並且將1 〇 〇 k g的多晶砂 塊體裝入坩堝，然後使加熱器發熱加以熔解而成爲原料融 '液Μ之後，控制施加電流使施加於加熱器1 6的電力成爲 1 0 0 kW，以形成直徑2 0 0mm之半導體單晶。該結 果顯示於表3 〇 表3B. V. Description of the invention (26) The resistance 値 is 12.9 times the resistance 値 of the current path member. Using this manufacturing apparatus 10, a quartz crucible 14 a with a diameter of 60 cm is put into the crystal growth furnace, and a 1000 kg polycrystalline sand block is put into the crucible, and then the heater is heated and melted to become After the raw material is melted, the applied current is controlled so that the electric power applied to the heater 16 becomes 100 kW to form a semiconductor single crystal with a diameter of 200 mm. The results are shown in Table 3 〇 Table 3

加熱器支撐構件•加熱器電極材質 鉬 (實施例2) 加熱器電阻値 ΙΟ.ΟιηΩ 電流値 3162Α 加熱器支撐構件•加熱器電極電阻値 0.07mQ 加熱器支撐構件·加熱器電極消耗電力 0.7kW (實施例3 ) 接下來，在第1圖的半導體單晶製造裝置1 〇中，由 於在結晶成長爐下方較有空間，因此電極保護構件3 〇以 石墨製成，並且使用直徑D爲過去的1 · 4倍，剖面積爲 2倍的電極保護構件3 0來進行半導體單晶的製造。此時 電極保護構件3 0的電性電阻値爲〇 . 2 5 m Ω，且係相 對於通過加熱器1 6之發熱部的電流爲1 / 2倍的電流密 度。 而且，以使用此電極保護構件3 0之製造裝置1 〇來 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) -— 經濟部智慧財產局員工消費合作社印製 -29 - 574442 A7Heater support member • Heater electrode material molybdenum (Example 2) Heater resistance 値 ΙΟ.ΟιηΩ Current 値 3162A Heater support member • Heater electrode resistance 値 0.07mQ Heater support member · Heater electrode power consumption 0.7kW ( Example 3) Next, in the semiconductor single crystal manufacturing apparatus 10 of FIG. 1, since there is more space below the crystal growth furnace, the electrode protection member 3 〇 is made of graphite, and the diameter D is used to be 1 · The electrode protection member 30 having 4 times the cross-sectional area is used for manufacturing a semiconductor single crystal. At this time, the electrical resistance 値 of the electrode protection member 30 is 0.25 m Ω, and the current density is 1/2 of the current density with respect to the current passing through the heating portion of the heater 16. Moreover, the paper size is applied to the manufacturing equipment 1 0 using this electrode protection member 30. National National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) -— Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-29-574442 A7

7 B 五、發明説明（27) 形成半導體單晶係與實施例2同樣地，從塡滿有 1 0 0 k g原料融液Μ的直徑6 0 c m石英坩堝1 4 a形 成直徑2 0 〇 m m的半導體單晶，單晶形成時的作業條件 亦以大致與實施例2相同的條件來進行成長作業。該結果 顯示於表4。 表4 __7 B V. Description of the invention (27) Formation of a semiconductor single crystal system In the same manner as in Example 2, a quartz crucible with a diameter of 60 cm and a diameter of 200 mm was filled with 100 kg of raw material melt M. For semiconductor single crystals, the operating conditions during the formation of the single crystals were also grown under substantially the same conditions as in Example 2. The results are shown in Table 4. Table 4 __

實施例3 比較例2 電極保護構件最大電流 密度 大約 33.3A/cm2 大約 69.3A/cm2 加熱器電阻値 ΙΟ.ΟιηΩ 電流値 3162Α 電極保護構件 電阻値 0.25ιηΩ 0.5 0m Ω 電極保護構件 消耗電力 2.5kW 5.0kW (比較例2 ) 爲過去所使用的石墨製電極保護構件3 0，使用直徑 爲D的電極保護構件3 0，於第1圖所示之半導體單晶製 造裝置1 0進行半導體單晶之製造。此時，爲了抑制因爲 施加電流而在電極保護構件3 0產生的過多發熱，將通過 電極保護構件3 0之電流的電流密度與通過加熱器1 6之 發熱部1 6 a的電流密度設爲相同値。而且，半導體單晶 的形成係在與實施例2相同的作業條件下形成直徑2 0 0 本紙張尺度通用中.國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、11 經濟部智慧財產局員工消費合作社印製 -30- 574442 A7 ___ B7 五、發明説明（28) (請先閲讀背面之注意事項再填寫本頁) m m的半導體單晶。該結果亦一倂顯示於表4。另外，比 較例2中，加熱器發熱部的電阻値不滿電流路徑構件之電 阻値的9倍。 從實施例3及比較例2的結果可知，在實施例3將電 極保護搆件3 0之直徑設爲2 D，電極保護構件之電性電 阻値會下降爲〇 . 2 5 m Ω，與比較例之習知電極保護構 件相較，電阻値爲1 / 2。 因此構成電極路徑構件3 6之電極保護構件3 0所消 耗的電力會減少，與比較例3相較可獲得2 . 5 k W的電 力削減效果。在此實施例3所使用的電極保護構件3 0當 中’將構件直徑設爲1 · 4倍，將剖面積設爲2倍，則與 比較例3之電極保護構件3 0相較，電流密度會成爲1 / 2倍，即3 3 _ 3 A / c m 2，因而可抑制電力的消耗。 經濟部智慧財產局員工消費合作社印製 加熱器1 6與對加熱器1 6供應電流的電流路徑構件 3 6爲相同材質的情況下，只要將通過電流路徑構件3 6 之電流的密度保持在通過加熱器1 6之發熱部1 6 a的電 流之電流密度的1 / 2以下，即可有效抑制不必要的電力 消耗。 另外，本發明並不限定於上述實施形態。上述實施形 態僅爲例示，只要具有與本發明申請專利範圍所記載之技 術性思想實質上相同的構造，且可發揮同樣效果，當然包 含在本發明之技術性範圍內。 例如，雖然以對於原料融液不施加電場而從原料融液 提拉單晶的C Z法爲例子說明了本發明之半導體單晶製造 本紙張尺度適用中國國家標準（CNS) A4規格（21〇χ297公釐） 574442 A7 B7 ___ 一 五、發明説明（29) (請先閱讀背面之注意事項再填寫本頁) 裝置及半導體單晶之製造方法，但即使是在半導體單晶製 造裝置之結晶成長爐外側配置磁鐵，以一邊對原料融液Μ 加電場，一邊形成半導體單晶之利用C Ζ法的半導體單晶 製造裝置及半導體單晶之形成方法，當然亦可獲得同樣的 效果。 而且，當然可將本發明利用在矽以外之半導體單晶2 製造用途，即使在利用c Ζ法形成例如G a A s等化合物 半導體單晶的情況下，也可充分發揮該效果。 【產業上利用的可能性】 如以上所述，利用c Z法形成半導體單晶的半導體單 晶製造裝置若是本發明之半導體單晶製造裝置’則可將形 成用來連接製造裝置之結晶成長爐內部所配置的加熱器與 設置於結晶成長爐底部之金屬電極之電流路徑的電流路徑 構件所浪費的電力降低，以抑制半導體單晶製造時能源的 損失。 經濟部智慧財產局員工消費合作社印製 而且，在不需要發熱的電流路徑構件使發熱的情況減 少，可避免電流路徑構件本身及其周邊之結晶成長爐內部 之石墨構件等爐內構造物的劣化及損傷’因此可降低因爲 劣化或損傷而更換零件的頻率，且可謀求可靠性的提升。 因此，不僅可提升半導體單晶製造裝置之可靠性及耐 久性，且可藉由減少加熱器之發熱所需的電力以及構成結 晶成長爐內部之零件的更換頻率’來實現半導體單晶之製 造成本的降低。 本紙張尺度遗用中國國家標準（CNS ) A4規格（210X297公釐_) ~ 574442 A7 B7 五、發明説明（ 3ty 尤其，本發明之半導體單晶製造裝置中，設置於結晶 離等的 距晶好 的單更 極體揮 電導發 屬半可 金矽， 之之中 部m置 底m裝 Μ oii 長ο製 成 2 晶 晶過單 結超體 與徑導 器直半 熱成型 加形大 的在之 部如法 內例 Ζ 爐 ，C 。 長長用果 成很利效 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 33Example 3 Comparative Example 2 The maximum current density of the electrode protection member is about 33.3A / cm2, about 69.3A / cm2, the heater resistance is 値 ΙΟ.ΟιηΩ, the current is 3162A, the resistance of the electrode protection member is 0.25nm, 0.5 0m Ω, and the power consumption of the electrode protection member is 2.5kW 5.0 kW (Comparative Example 2) is a conventional graphite electrode protection member 30, and a diameter of D is used as the electrode protection member 30. The semiconductor single crystal manufacturing apparatus 10 shown in FIG. 1 is used to manufacture a semiconductor single crystal. . At this time, in order to suppress excessive heat generation in the electrode protection member 30 due to the application of current, the current density of the current passing through the electrode protection member 30 and the current density passing through the heating portion 16 a of the heater 16 are set to be the same. value. Moreover, the semiconductor single crystal is formed under the same operating conditions as in Example 2 to form a diameter of 200. This paper is commonly used in the standard. National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back first) (Fill in this page again), 11 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -30- 574442 A7 ___ B7 V. Description of Invention (28) (Please read the precautions on the back before filling this page) mm single crystal semiconductor. The results are also shown in Table 4 at a glance. In addition, in Comparative Example 2, the resistance of the heater heating portion is less than 9 times the resistance of the current path member. From the results of Example 3 and Comparative Example 2, in Example 3, the diameter of the electrode protection member 30 is set to 2 D, and the electrical resistance 値 of the electrode protection member will decrease to 0.2 5 m Ω, compared with Compared with the conventional electrode protection member, the resistance 値 is 1/2. Therefore, the power consumed by the electrode protection member 30 constituting the electrode path member 36 is reduced, and a power reduction effect of 2.5 kW can be obtained compared with Comparative Example 3. Among the electrode protection members 3 0 used in this Example 3, if the member diameter is set to 1 · 4 times and the cross-sectional area is set to 2 times, compared with the electrode protection member 30 of Comparative Example 3, the current density will be smaller. It is 1/2 time, which is 3 3 _ 3 A / cm 2, so it can suppress power consumption. If the heater 16 printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and the current path member 36 supplying current to the heater 16 are the same material, as long as the density of the current passing through the current path member 3 6 is maintained at The current density of the heating portion 16 a of the heater 16 is less than 1/2 of the current density, which can effectively suppress unnecessary power consumption. The present invention is not limited to the embodiments described above. The above-mentioned embodiment is merely an example, as long as it has a structure that is substantially the same as the technical idea described in the patent application scope of the present invention and can exhibit the same effect, it is naturally included in the technical scope of the present invention. For example, although the CZ method of pulling a single crystal from a raw material melt without applying an electric field to the raw material melt is used as an example to illustrate the manufacture of the semiconductor single crystal of the present invention, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇 × 297). (Mm) 574442 A7 B7 ___ One or five, description of the invention (29) (Please read the precautions on the back before filling out this page) device and semiconductor single crystal manufacturing method, but even in the crystal growth furnace of semiconductor single crystal manufacturing equipment A magnet is arranged on the outside, and a semiconductor single crystal manufacturing apparatus using the CZ method and a method for forming a semiconductor single crystal are formed while applying an electric field to the raw material molten solution M. Of course, the same effect can be obtained. Furthermore, the present invention can of course be used for manufacturing a semiconductor single crystal 2 other than silicon, and even when a compound semiconductor single crystal such as G a A s is formed by the cZ method, this effect can be fully exerted. [Possibility of industrial use] As described above, if a semiconductor single crystal manufacturing device for forming a semiconductor single crystal by using the cZ method is the semiconductor single crystal manufacturing device of the present invention, a crystal growth furnace for connecting the manufacturing device can be formed. The wasted power of the current path member of the current path of the heater and the metal electrode provided at the bottom of the crystal growth furnace is reduced in order to suppress the energy loss during semiconductor single crystal manufacturing. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Furthermore, the current path members that do not need heat generate less heat, which can avoid the deterioration of furnace structure such as graphite members inside the current path member itself and the surrounding crystal growth furnace. And damage 'can therefore reduce the frequency of parts replacement due to deterioration or damage, and can improve reliability. Therefore, not only the reliability and durability of the semiconductor single crystal manufacturing device can be improved, but also the manufacturing cost of the semiconductor single crystal can be achieved by reducing the power required by the heater to generate heat and the frequency of replacement of the components constituting the crystal growth furnace. The reduction. This paper is based on the Chinese National Standard (CNS) A4 specification (210X297 mm_) ~ 574442 A7 B7 V. Description of the invention (3ty In particular, the semiconductor single crystal manufacturing device of the present invention is set at a good distance from crystals. The monopolar body ’s volatile conductance is semi-gold gold silicon. The middle part is placed at the bottom and the bottom is installed. The length is made of 2 crystals, and the single-junction superbody and the diameter guide are straight and semi-thermoformed. The rules are as follows: Z furnace, C. Long use of fruit is very effective (please read the precautions on the back before filling out this page). The paper printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese national standard (CNS ) A4 size (210X297 mm) 33

Claims (1)

A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 574442s 公 夂、申請專利範圍 1 . 一種半導體單晶的製造裝置，係利用一種將原料 融液收容在製造裝置結晶成長爐內部的坩渦，並且使籽晶 接融於該原料融液表面後加以提拉，藉此於籽晶下方形成 ,單晶的切克勞斯基法來製造單晶者，其特徵在於：將加熱 器配置在該坩堝的周圍以加熱熔融前述坩堝所收容的原料 ，並且將用來對該加熱器之發熱部供應電力的電流路徑設 置在前述製造裝置結晶成長爐內部，而且該加熱器之發熱 部的電性電阻値爲構成該電流路徑之電流路徑構件之電性 電阻値的9倍以上。 ’ 2 . —種半導體單晶的製造裝置，係利用一種將原料 融液收容在製造裝置結晶成長爐內部的坩堝，並且使籽晶 接融於該原料融液表面後加以提拉，藉此於籽晶下方形成 單晶的切克勞斯基法來製造單晶者，其特徵在於：將加熱 器配置在該坩堝的周圍以加熱熔融前述坩堝所收容的原料 ，並且將用來對該加熱器之發熱部供應電力的電流路徑設 置在前述製造裝置結晶成長爐內部，而且構成該電流路徑 之電流路徑構件的電性電阻率比該加熱器之發熱部的電性 電阻率還低。 、 3 .如申請專利範圍第2項之半導體單晶的製造裝置 ，其中，在1 5 0 0 °C的高溫下，前述電流路徑構件的電 性電阻率爲前述加熱器之發熱部的電性電阻率的1 / 1 0 以下。 4 .如申請專利範圍第1項之半導體單晶的製造裝置 ，其中，使用石墨作爲前述加熱器的材料，構成前述電流 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） C請先聞讀背面之注意事項再填寫本頁}A8 B8 C8 D8 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 574442s, and applied for patent scope 1. A semiconductor single crystal manufacturing device uses a crucible that contains the raw material melt in the crystal growth furnace of the manufacturing device. And the seed crystal is fused to the surface of the raw material melt and then pulled up, thereby forming a single crystal by the Cheklaussky method of single crystal formation under the seed crystal, which is characterized in that the heater is arranged in the The crucible is heated to melt the raw material contained in the crucible, and a current path for supplying power to the heating portion of the heater is provided inside the crystal growth furnace of the manufacturing apparatus, and the electrical resistance of the heating portion of the heater is値 is more than 9 times the electrical resistance 値 of the current path member constituting the current path. '2. A semiconductor single crystal manufacturing device uses a crucible containing a raw material melt in a crystal growth furnace of the manufacturing device, and the seed crystal is fused to the surface of the raw material melt and then pulled, thereby A person who manufactures a single crystal by the Cheklaussky method of forming a single crystal below the seed crystal is characterized in that a heater is arranged around the crucible to heat and melt the raw materials contained in the crucible, and will be used for the heater A current path for supplying power to the heating portion is provided inside the crystal growth furnace of the manufacturing apparatus, and the electrical resistivity of the current path member constituting the current path is lower than the electrical resistivity of the heating portion of the heater. 3. The device for manufacturing a semiconductor single crystal according to item 2 of the scope of patent application, wherein at a high temperature of 1 500 ° C, the electrical resistivity of the current path member is the electrical property of the heating portion of the heater. The resistivity is less than 1/10. 4. The semiconductor single crystal manufacturing device according to item 1 of the scope of patent application, wherein graphite is used as the material of the aforementioned heater to constitute the aforementioned electric current. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). Read the notes on the back before filling out this page} 574442 A8 B8 C8 D8 六、申請專利範圍 路徑構件之一部分或全部的材料之主要成分則使用融點比 收谷在i甘堝之原料融液尚，而且從鉬、鎢' 組及銀所構成 之群中所選擇之1種或2種以上所構成的金屬或合金。 5 _如申請專利範圍第2項之半導體單晶的製造裝置 ，其中，使用石墨作爲前述加熱器的材料，構成前述電流 路徑構件之一部分或全部的材料之主要成分則使用融點比 收容在坩堝之原料融液高，而且從鉬、鎢、钽及鈮所構成 之群中所選擇之1種或2種以上所構成的金屬或合金。 6 ·如申請專利範圍第3項之半導體單晶的製造裝置 ，其中，使用石墨作爲前述加熱器的材料，構成前述電流 .路徑構件之一部分或全部的材料之主要成分則使用融點比 收容在坩堝之原料融液高，而且從鉬、鎢、钽及鈮所構成 之群中所選擇之1種或2種以上所構成的金屬或合金。 7 ·如申請專利範圍第1項之半導體單晶的製造裝置 ，其中，使通過前述電流路徑構件的電流之電流密度1比前 述加熱器之發熱部所通過的電流密度還小。 經濟部智慧財產局員工消費合作社印製 8 .如申請專利範圍第2項之半導體單晶的製造裝置 ，其中，使通過前述電流路徑構件的電流之電流密度比前 述加熱器之發熱部所通過的電流密度還小。 9 ·如申請專利範圍第3項之半導體單晶的製造裝置 ，其中，使通過前述電流路徑構件的電流之電流.密度比前 述加熱器之發熱部所通過的電流密度還小。. 1 0 .如申請專利範圍第4項之半導體單晶的製造裝 置，其中，使通過前述電流路徑構件的電流之電流密度比 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -35- 574442 A8 B8 C8 D8 六、申請專利托圍 前述加熱器之發熱部所通過的電流密度還小。 1 1 . 一種半導體單晶的製造裝置，係利用一種將原 料融液收容在製造裝置結晶成長爐內部的坩堝，並且使籽 晶接融於該原料融液表面後加以提拉，藉此於籽晶下方形 成單晶的切克勞斯基法來製造單晶者，其特徵在於：將加 熱器配置在該坩堝的周圍以加熱熔融前述坩堝所收容的原 料，並且將用來對該加熱器之發熱部供應電力的電流路徑 設置在前述製造裝置結晶成長爐內部，而且使構成該電流 路徑之電流路徑構件所通過的電流之電流密度比該加熱器 之發熱部所通過的電流之電流密度還小。 1 2 .如申請專利範圍第7項之半導體單晶的製造裝 置，其中，使通過前述電流路徑構件的電流之電流密度成 爲前述加熱器之發熱部所通過的電流之電流密度的1 / 2 以下。 1 3 .如申請專利範圍第8項之半導體單晶的製造裝 置，其中，使通過前述電流路徑構件的電流之電流密度成 爲前述加熱器之發熱部所通過的電流之電流密度的1 / 2 以下。 1 4 .如申請專利範圍第9項之半導體單晶的製造裝 置，其中，使通過前述電流路徑構件的電流之電流密度成 爲前述加熱器之發熱部所通過的電流之電流密度的1 / 2 以下。 工5 .如申請專利範圍第1 0項之半導體單晶的製造 裝置，其中，使通過前述電流路徑構件的電流之電流密度 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項#填寫本頁) IT 經濟部智慧財產局員工消費合作社印製 574442 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 成爲前述加熱器之發熱部所通過的電流之電流密度的1 / 2以下。 1 6 .如申請專利範圔第1 1項之半導體單晶的製造 裝置，其中，使通過前述電流路徑構件的零流之電流密度 成爲前述加熱器之發熱部所通過的電流之電流密度的1 / 2以下。 1 7 _如申請專利範圍第1項至第1 6項任一項之半 導體單晶的製造裝置，其中，將用來對該製造裝置之結晶 成長爐內部之坩堝所收容的前述融液進行加熱熔融的加熱 器之電性電阻値設爲1 0 m Ω以上。 1 8 · —種半導體單晶的製造方法，其特徵在於：使 用申請專利範圍第1項至第1 6項任一項之半導體單晶的 製造裝置，並且利用切克勞斯基法從該製造裝置之結晶成 長爐內部之坩堝所收容的前述原料融液提拉半導體單晶而' 加以製造。 1 9 . 一種半導體單晶的製造方法，其特徵在於：使 用申請專利範圍第1 7項之半導體單晶的製造裝置，並且 利用切克勞斯基法從該製造裝置之結晶成長爐內部之坩堝 所收容的前述原料融液提拉半導體單晶而加以製造。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 、言 (請先閲讀背面之注意事項再填寫本頁)574442 A8 B8 C8 D8 VI. The main components of some or all of the materials for the path members of the patent application range are the raw material melts that have a melting point higher than that in the i-gold pot, and are composed of molybdenum, tungsten 'group and silver. A metal or alloy composed of one or more selected from the group. 5 _ If the semiconductor single crystal manufacturing device according to item 2 of the patent application scope, wherein graphite is used as the material of the heater, and the main component of the material constituting part or all of the current path member is contained in the crucible using a melting point ratio The raw material melt is high, and one or two or more metals or alloys are selected from the group consisting of molybdenum, tungsten, tantalum and niobium. 6. The semiconductor single crystal manufacturing device according to item 3 of the patent application, wherein graphite is used as the material of the heater to constitute the aforementioned current. The main component of some or all of the material of the path member is contained in the melting point ratio. The crucible has a high raw material melt, and one or two or more metals or alloys selected from the group consisting of molybdenum, tungsten, tantalum and niobium. 7. The device for manufacturing a semiconductor single crystal according to item 1 of the patent application, wherein the current density 1 of the current passing through the current path member is smaller than the current density passing through the heating portion of the heater. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 8. As in the manufacturing apparatus for a semiconductor single crystal in the second scope of the patent application, wherein the current density of the current passing through the current path member is higher than that of the heater passing through the heating portion of the heater The current density is still small. 9. The semiconductor single crystal manufacturing device according to claim 3, wherein the current density of the current passing through the current path member is smaller than the current density passing through the heating portion of the heater. 10. The device for manufacturing a semiconductor single crystal according to item 4 of the scope of patent application, wherein the current density of the current passing through the current path member is more than the Chinese standard (CNS) A4 specification (210X297 mm) for this paper size. -35- 574442 A8 B8 C8 D8 6. The current density passed by the patent application to enclose the heating part of the heater is still small. 1 1. A semiconductor single crystal manufacturing device uses a crucible that contains a raw material melt in a crystal growth furnace of the manufacturing device, and connects the seed crystal to the surface of the raw material melt and then pulls the seed crystal. A person who manufactures a single crystal by the Cheklaussky method of forming a single crystal below the crystal is characterized in that a heater is arranged around the crucible to heat and melt the raw material contained in the crucible, and is used to heat the heater. The current path for supplying power to the heating section is provided inside the crystal growth furnace of the manufacturing apparatus, and the current density of the current passing through the current path member constituting the current path is smaller than the current density of the current passing through the heating section of the heater. . 12. The manufacturing apparatus of a semiconductor single crystal according to item 7 of the scope of patent application, wherein the current density of the current passing through the current path member is made to be less than 1/2 of the current density of the current passing through the heating portion of the heater. . 1 3. The device for manufacturing a semiconductor single crystal according to item 8 of the scope of patent application, wherein the current density of the current passing through the current path member is equal to or less than 1/2 of the current density of the current passing through the heating portion of the heater. . 14. The device for manufacturing a semiconductor single crystal according to item 9 of the scope of patent application, wherein the current density of the current passing through the current path member is made to be less than 1/2 of the current density of the current passing through the heating portion of the heater. . 5. The device for manufacturing a semiconductor single crystal according to item 10 of the scope of patent application, wherein the current density of the current passing through the aforementioned current path member is adapted to the Chinese National Standard (CNS) A4 specification (210X297 mm). Please read the note on the back #Fill this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Employee Consumer Cooperative 574442 Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, A8 B8 C8 D8 The current density of the passing current is less than 1/2. 16. The device for manufacturing a semiconductor single crystal according to item 11 of the patent application, wherein the current density of zero current passing through the current path member is set to 1 of the current density of the current passing through the heating portion of the heater. / 2 or less. 1 7 _If a semiconductor single crystal manufacturing device according to any one of the scope of claims 1 to 16 of the patent application scope, the aforementioned molten liquid contained in the crucible inside the crystal growth furnace of the manufacturing device is heated The electrical resistance 値 of the fused heater is set to 10 m Ω or more. 1 ·· A method for manufacturing a semiconductor single crystal, characterized in that a semiconductor single crystal manufacturing device according to any of claims 1 to 16 of the scope of patent application is used, and the method is manufactured from the method using a Cheklaussky method The above-mentioned raw material melt contained in the crucible inside the crystal growth furnace of the apparatus is pulled to produce a semiconductor single crystal. 19. A method for manufacturing a semiconductor single crystal, comprising: using a semiconductor single crystal manufacturing device for which a patent application is applied to item 17; and using a Cheklaussky method to grow a crucible inside a furnace from the crystal growth of the manufacturing device The semiconductor melt is pulled up by the contained raw material melt and manufactured. This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm), words (Please read the precautions on the back before filling this page) -37-37