TW570970B - Highly efficient fluorescent material - Google Patents
Highly efficient fluorescent material Download PDFInfo
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- TW570970B TW570970B TW091100290A TW91100290A TW570970B TW 570970 B TW570970 B TW 570970B TW 091100290 A TW091100290 A TW 091100290A TW 91100290 A TW91100290 A TW 91100290A TW 570970 B TW570970 B TW 570970B
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- 239000000463 material Substances 0.000 title claims abstract description 41
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 15
- 150000001768 cations Chemical class 0.000 claims abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
- 238000001228 spectrum Methods 0.000 claims description 7
- 239000012190 activator Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 1
- -1 silicide nitrides Chemical class 0.000 abstract 2
- 239000000203 mixture Substances 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 150000002829 nitrogen Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
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Description
570970 五、發明說明(1) 技術領域 本發明係關於一種根據申請專利範圍第1項所述& _ 矽化物種類的螢光材料。特別地,這些材料爲會在黃@ 區域發螢光的氮矽化物。 先述技藝 氮矽化物型式(諸如S^ShN8及BadiJ8)之螢光材料 已從史利普(Schlieper)、米勒斯(Millus)及史力克 (Schlick)的·· Nitridosilicate II,
Hochtemperatursynthesen 及 Kristallstrukturen von
Sr2Si5N8 及 Ba2Si5N8 [氮矽化物 II,Sr2Si5N8 及 Ba2Si5N8 之高溫合成及結晶結構],Z.anorg.Allg.Chem.621, ( 1 995),第1 3 80頁之文章中熟知。但是,於此實例中並 無指明能在可看見光譜的特定區域中提供有效率發射之 激活劑(activators)。 發明槪述 本發明之目標爲提供一種根據申請專利範圍第1項所 述之螢光材料,其效率是儘可能地高而且也可利用在 3 70至43 0奈米區域的UV輻射而有效地被激發。 此目標可藉由申請專利範圍第1項的特徵部分而達 成。特別地,優良的細節部可在申請專利範圍中的附屬 項中發現。 目前,尙無高效率且可在約4 0 0奈米區域中有效地激 發之黃色螢光發射材料。已熟知一般使用的螢光材料 YAG:Ce公認地可在低於3 70奈米及大於43 0奈米下有 570970 五、發明說明(2) 效地被激發,但是不在約4 0 0奈米的區域。其它摻雜有 C e的石榴石類在所題的使用範圍下亦僅具有輕微被激發 的能力。因此需要發展出一種完全不同的系統。 根據本發明,選擇該螢光材料的組成物,使其構成可 藉由三價的Ce激活之Sr氮矽化物。先前未熟知的螢光 材料Sr2Si5N8 : Ce3 +可有效率地吸收近UV(特別是在 370至430奈米的區域處)且可有效率地發黃色光。其可 較佳地藉由1至10莫耳%的Ce(對Sr來說)激活。於此 實例中,Sr可部分地由Ba及/或Ca取代(有利地,最 高可達3 0莫耳%)。進一步的具體實施例則建構出一 SrSi7NiG : Ce3 +氮矽化物型式。於此實例中,Sr也可部 分地由B a及/或C a取代。 此螢光材料特別相當地適合作爲由初級UV輻射源(諸 如例如,UV LED或其它的燈)激發的黃色組分。因此, 其可在白色或黃色區域進行光源發射,如類似地在WO 9 8/3 9 8 07中描述。黃光發射源乃基於初級發射UV輻射 的LED,該LED的輻射可藉由根據本發明之螢光材料完 全地轉換成黃光。 特別地,此螢光材料可使用在與UV-LED(例如InGaN 型式)相關上,其可藉由在藍色及黃色區域發射螢光的材 料而產生白光。藍色組分的候選材料本身已熟知;例 如,BaMgAl1()017EU2+ (熟知爲 BAM)或 Ba5Si04(Cl, Br)6EU2 +或 CaLA2S4Ce3 +或其它(Sr,Ba,Ca)5(P〇4)3Cl :EU2+ (熟知爲SCAP)。此外,可使用紅色螢光材料來 570970 五、發明說明(3) 改善此系統的顏色。(Y,La,Gd,Lu)202S : EU3+、SrS :EU2 +或其它Sr2Si5N8 : EU2+ (尙未公告,參見EP-A 99 1 23 747.0)特別合適。 圖式之簡單說明 下列之目的爲藉由二個典型的具體實施例之輔助而更 詳細地解釋本發明。在圖形中: 第1圖顯示出第一氮矽化物的發射光譜; 第2圖顯示出此氮矽化物的反射光譜; 第3圖顯示出第二氮矽化物的發射光譜; 第4圖顯示出此氮矽化物的反射光譜; 第5圖顯示出提供作爲白光光源的半導體構件;及 第6圖顯示出三種螢光材料混合物的發射光譜。 圖式說明 根據本發明之螢光材料的具體實例則顯示在第1圖, 其係關於S r 2 S i 5 N 8 · C e 2發射營光材料,c e比例相當於 由Sr占據的晶格位置(lattice site)之4莫耳%。最大發 射在545奈米,及平均波長在5 72奈米。彩色矢量圖 (color locus)爲 x = 0.395 ; y = 0.514。激發則以 400 奈米 進行。 以通常的方法進行製造,將起始材料S r 3 N 2、S i 3 N 4及 Ce〇2彼此混合,隨後將該混合物以還原方式在14〇〇。〇 之N 2及Η 2下於爐中烘烤超過5小時。 第2圖顯示出此螢光材料的散射光譜。其顯示出在 3 70至440奈米區域處有明顯的最小値,因此說明在此 570970 五、發明說明(4) 區域中有好的被激發能力。 根據本發明的螢光材料之第二實例則顯示在第3圖, 其係關於Sr2Si5N8 : Ce2 +發射螢光材料,Ce比例相當於 由Sr所占據的晶格位置之8莫耳%。最大發射在5 54奈 米,平均波長在579奈米。彩色矢量圖(color locus)爲 x = 0.4 1 4 ; y = 0.514〇 以上述描述的方法來進行製造,將該混合物以還原方 式在1 40 0 °C的N2下於烘箱中烘烤超過6小時。 第4圖顯示出此螢光材料的散射光譜。其顯示出在 3 70至440奈米的區域有明顯的最小値,因此說明在此 區域中有好的被激發能力。 白光光源的設計則明確地顯示在第5圖中。光源爲具 InGaN型式的晶片1之半導體構件,其具有例如390奈 米的發射波長波峰,而埋在不透明的基本外罩8之切開 處9的區域中。晶片1藉由接合的金屬線1 4而連接至 第一終端3,且直接地連接至第二電終端2上。切開處 9則塡滿滿有封裝化合物5,其包含一作爲主要構成物 的環氧鑄塑樹脂(8 0至9 0重量% ),及螢光顏料6 (少於 1 5重量%)。第一螢光材料爲於第一典型具體實施例所述 之該氮矽化物,同時第二螢光材料可在藍色區域發光, 於此特別地爲Ba5Si04(Cl,Br)6 : EU2+。該切開處具有 一邊壁1 7,其可提供作爲晶片1或顏料6之初級及二級 輻射的反射器。藍色及黃色二級輻射的組合可混合以產 生白色。 570970 五、發明說明(5) 在進一步的典型具體貫施例中’使用二種營光材料的 混合物作爲螢光顏料。第一螢光材料(υ爲於第一典型具 體實施例中所述之黃色發射氮矽化物Sr2Si5N8 : Ce2+、 第二(2)爲上述提及的藍色發射螢光材料SC AP及第三 爲型式Sr2Si5N8 : EU2 +之紅色發射螢光材料。第6圖顯 示出含可在3 7 5奈米處發射之初級發射L E D的光譜,各 別的黃色(1 )、藍色(2 )及紅色(3 )成分一起加入而形成一 整體光譜(G ),其可傳達一種高品質的白色色感。相關的 彩色矢量圖爲χ = 0· 3 3 3 ; y = 0.33 1。使用三種組分可保証 一種特別好的色彩重現。 參考符號說明 1 .....晶片 2 .....第二電終端 3 .....第一終端 5 .....封裝化合物 6 .....螢光顏料 8 .....不透明的基本外罩 9 .....切開處 14.....黏合的金屬線 •邊壁 1
Claims (1)
- 570970 92. 4;六、申請專利範圍 第9 1 1 0029 0號「高效率螢光材料、具有輻射源之光源」 專利案 (9 2年4月修正) A申請專利範圍: 1. 一種高效率螢光材料,其爲具有一陽離子A及基本 式爲AXS 1 yNz之氮矽化物種類,其特徵爲S 1·使用作 爲陽離子A,而該氮矽化物摻雜有用作激活劑的三 價C e。 2·如申請專利範圍第1項之螢光材料,其中該螢光材 料爲31*2315〜〇63 + 或31-317叱。:〇63+。 3·如申g靑專利範圍第1項之螢光材料,其中c e量的比 例在Sr的1及10莫耳%之間。 4·如申請專利範圍第1項之螢光材料,其中部分的s r 可由Ba及/ 或Ca替換。 5. 如申g靑專利範圍第4項之螢光材料,其中S r是3 0 莫耳%。 6. —種具有初級輻射源之光源,該初級輻射源可在光 學光譜區域的短波區域中在3 7 0至4 3 0奈米的波長 區域中發射輻射,此輻射可藉由申請專利範圍第1 至5項中任一項所述之第一螢光材料完全地或部分 地轉換成波長較長的且在可看見光譜區域中的二級 輻射。 7. 如申請專利範圍第6項之光源,其中使用一種以 570970 六、申請專利範圍 InGaN爲主的光·使用二極體作爲初級輻射源。 8. 如申g靑專利範圍第6項之光源,其中部分初級輻射 可藉由第二螢光材料繼續轉換成輻射較長的波長, 特別地,該第一及第二螢光材料經合適地選擇及混 合而可產生白光。 9. 如申請專利範圍第 8項之光源,其中部分初級輻射 可藉由第三螢光材料繼續轉換成輻射較長的波長, 此第三螢光材料可在紅色光譜區域中發射。 -------
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DE10105800.4A DE10105800B4 (de) | 2001-02-07 | 2001-02-07 | Hocheffizienter Leuchtstoff und dessen Verwendung |
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TW570970B true TW570970B (en) | 2004-01-11 |
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TW091100290A TW570970B (en) | 2001-02-07 | 2002-01-11 | Highly efficient fluorescent material |
Country Status (8)
Country | Link |
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US (1) | US6724142B2 (zh) |
JP (1) | JP2002322474A (zh) |
KR (1) | KR20020065843A (zh) |
DE (1) | DE10105800B4 (zh) |
FR (1) | FR2820429B3 (zh) |
GB (1) | GB2373510B (zh) |
NL (1) | NL1019917C2 (zh) |
TW (1) | TW570970B (zh) |
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JP4581540B2 (ja) * | 2003-06-30 | 2010-11-17 | 日亜化学工業株式会社 | 半導体発光素子とそれを用いた発光装置 |
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JP4805829B2 (ja) * | 2003-09-24 | 2011-11-02 | パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング | 定義された色温度を有する白色発光led |
TWI350009B (en) * | 2003-09-24 | 2011-10-01 | Osram Gmbh | High efficient lighting system on led-basis with improved color rendition |
TWI359187B (en) * | 2003-11-19 | 2012-03-01 | Panasonic Corp | Method for preparing nitridosilicate-based compoun |
JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP3931239B2 (ja) * | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 発光素子及び照明器具 |
US7611641B2 (en) * | 2004-02-20 | 2009-11-03 | Koninklijke Philips Electronics N.V. | Illumination system comprising a radiation source and a fluorescent material |
WO2005103199A1 (en) * | 2004-04-27 | 2005-11-03 | Matsushita Electric Industrial Co., Ltd. | Phosphor composition and method for producing the same, and light-emitting device using the same |
US20060017041A1 (en) * | 2004-06-25 | 2006-01-26 | Sarnoff Corporation | Nitride phosphors and devices |
US20060049414A1 (en) * | 2004-08-19 | 2006-03-09 | Chandran Ramachandran G | Novel oxynitride phosphors |
EP2360225B1 (en) | 2004-09-22 | 2013-06-26 | National Institute for Materials Science | Phosphor, production method thereof and light emitting instrument |
JP4756261B2 (ja) | 2005-01-27 | 2011-08-24 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法および発光器具 |
DE602006009768D1 (de) | 2005-02-21 | 2009-11-26 | Koninkl Philips Electronics Nv | Beleuchtungssystem mit strahlenquelle und lumineszierendem material |
US7439668B2 (en) | 2005-03-01 | 2008-10-21 | Lumination Llc | Oxynitride phosphors for use in lighting applications having improved color quality |
US7524437B2 (en) | 2005-03-04 | 2009-04-28 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method of the same, and light emitting device using the phosphor |
CN101133137B (zh) | 2005-03-04 | 2013-05-08 | 三菱化学株式会社 | 荧光体及其制备方法、和使用该荧光体的发光装置 |
CN101175835B (zh) * | 2005-05-24 | 2012-10-10 | 三菱化学株式会社 | 荧光体及其应用 |
KR101264580B1 (ko) | 2005-09-27 | 2013-05-14 | 미쓰비시 가가꾸 가부시키가이샤 | 형광체 및 그 제조방법, 및 상기 형광체를 사용한 발광장치 |
US7942556B2 (en) * | 2007-06-18 | 2011-05-17 | Xicato, Inc. | Solid state illumination device |
US7984999B2 (en) * | 2007-10-17 | 2011-07-26 | Xicato, Inc. | Illumination device with light emitting diodes and moveable light adjustment member |
US9086213B2 (en) * | 2007-10-17 | 2015-07-21 | Xicato, Inc. | Illumination device with light emitting diodes |
EP2163593A1 (en) * | 2008-09-15 | 2010-03-17 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Production of nitride-based phosphors |
US8220971B2 (en) | 2008-11-21 | 2012-07-17 | Xicato, Inc. | Light emitting diode module with three part color matching |
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US9631782B2 (en) * | 2010-02-04 | 2017-04-25 | Xicato, Inc. | LED-based rectangular illumination device |
US8104908B2 (en) | 2010-03-04 | 2012-01-31 | Xicato, Inc. | Efficient LED-based illumination module with high color rendering index |
KR100984273B1 (ko) * | 2010-05-25 | 2010-10-01 | 충남대학교산학협력단 | 질화물 형광체, 이의 제조방법 및 상기 형광체를 포함하는 발광 소자 |
US20120051045A1 (en) | 2010-08-27 | 2012-03-01 | Xicato, Inc. | Led Based Illumination Module Color Matched To An Arbitrary Light Source |
KR101292320B1 (ko) * | 2011-03-11 | 2013-07-31 | 금호전기주식회사 | 형광체 및 그 제조방법 |
TWI516572B (zh) | 2012-12-13 | 2016-01-11 | 財團法人工業技術研究院 | 螢光材料、及包含其之發光裝置 |
EP2990457B1 (en) * | 2013-04-25 | 2018-12-05 | National Institute for Materials Science | Phosphor, method for producing same, light-emitting device, and image display apparatus |
CN103275705B (zh) * | 2013-06-21 | 2017-08-25 | 北京有色金属研究总院 | 荧光粉、其制备方法及包括其的发光装置 |
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US6068383A (en) * | 1998-03-02 | 2000-05-30 | Robertson; Roger | Phosphorous fluorescent light assembly excited by light emitting diodes |
EP1104799A1 (en) * | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
-
2001
- 2001-02-07 DE DE10105800.4A patent/DE10105800B4/de not_active Expired - Lifetime
-
2002
- 2002-01-11 TW TW091100290A patent/TW570970B/zh active
- 2002-01-21 GB GB0201264A patent/GB2373510B/en not_active Expired - Fee Related
- 2002-01-30 KR KR1020020005392A patent/KR20020065843A/ko not_active Application Discontinuation
- 2002-01-31 US US10/062,095 patent/US6724142B2/en not_active Expired - Lifetime
- 2002-02-04 JP JP2002027215A patent/JP2002322474A/ja not_active Withdrawn
- 2002-02-04 FR FR0201267A patent/FR2820429B3/fr not_active Expired - Fee Related
- 2002-02-07 NL NL1019917A patent/NL1019917C2/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2820429B3 (fr) | 2003-01-03 |
GB2373510B (en) | 2004-07-07 |
KR20020065843A (ko) | 2002-08-14 |
NL1019917C2 (nl) | 2006-01-17 |
NL1019917A1 (nl) | 2002-08-08 |
DE10105800A1 (de) | 2002-08-08 |
US20020105269A1 (en) | 2002-08-08 |
JP2002322474A (ja) | 2002-11-08 |
GB2373510A (en) | 2002-09-25 |
DE10105800B4 (de) | 2017-08-31 |
FR2820429A3 (fr) | 2002-08-09 |
US6724142B2 (en) | 2004-04-20 |
GB0201264D0 (en) | 2002-03-06 |
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