TW570909B - Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance - Google Patents

Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance Download PDF

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TW570909B
TW570909B TW091113997A TW91113997A TW570909B TW 570909 B TW570909 B TW 570909B TW 091113997 A TW091113997 A TW 091113997A TW 91113997 A TW91113997 A TW 91113997A TW 570909 B TW570909 B TW 570909B
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Taiwan
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oxide
transparent conductive
conductive film
indium
resistance
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TW091113997A
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Chinese (zh)
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Seiichiro Takahashi
Makoto Ikeda
Hiroshi Watanabe
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Mitsui Mining & Smelting Co
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    • A—HUMAN NECESSITIES
    • A22—BUTCHERING; MEAT TREATMENT; PROCESSING POULTRY OR FISH
    • A22C—PROCESSING MEAT, POULTRY, OR FISH
    • A22C29/00—Processing shellfish or bivalves, e.g. oysters, lobsters; Devices therefor, e.g. claw locks, claw crushers, grading devices; Processing lines
    • A22C29/02—Processing shrimps, lobsters or the like ; Methods or machines for the shelling of shellfish
    • A22C29/021—Cleaning operations on shellfish, e.g. evisceration, brushing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • A—HUMAN NECESSITIES
    • A22—BUTCHERING; MEAT TREATMENT; PROCESSING POULTRY OR FISH
    • A22C—PROCESSING MEAT, POULTRY, OR FISH
    • A22C29/00—Processing shellfish or bivalves, e.g. oysters, lobsters; Devices therefor, e.g. claw locks, claw crushers, grading devices; Processing lines
    • A22C29/04—Processing bivalves, e.g. oysters
    • A22C29/043—Cleaning operations on bivalves, e.g. evisceration, brushing, separation of meat and shell material
    • A—HUMAN NECESSITIES
    • A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
    • A23L—FOODS, FOODSTUFFS, OR NON-ALCOHOLIC BEVERAGES, NOT COVERED BY SUBCLASSES A21D OR A23B-A23J; THEIR PREPARATION OR TREATMENT, e.g. COOKING, MODIFICATION OF NUTRITIVE QUALITIES, PHYSICAL TREATMENT; PRESERVATION OF FOODS OR FOODSTUFFS, IN GENERAL
    • A23L17/00—Food-from-the-sea products; Fish products; Fish meal; Fish-egg substitutes; Preparation or treatment thereof
    • A23L17/40—Shell-fish

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Zoology (AREA)
  • Food Science & Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

To provide a sputtering target for forming a transparent conductive film of high electric resistance which target is applicable to a DC magnetron sputtering apparatus and can form a transparent film of high electric resistance, and a method for producing a transparent conductive film of high electric resistance. The indium-oxide-based sputtering target for forming a high-electric-resistance, transparent conductive film having a resistivity of approximately (0.8-10)x10<-3> Omegacm contains indium oxide, an insulating oxide, and, in accordance with needs, an optional tin oxide.

Description

570909 五、發明說明（1) ---— JL贺所屬i技術領域 本發明係在製作電阻率約為0 · 8〜1 0 x丨〇-3 Ω Cm的高電阻 導電膜時所使用的高電阻透明導電膜用濺鍍靶材 0 “且 (Sputtering tar got)及使用它製造高電阻透明邋*…a $电膜的 尚電阻透明導電膜之製造方法。 先前技術 、由於氧化銦-氧化錫（I rig 〇3 - S η 〇2的複合氧化物，以下稱 為’ I Τ0’）膜的可見光透過性高，且導電性高，所以作為^ 明導電膜被廣泛應用於液晶顯示裝置、玻璃的防止、乡士 ^用 發熱膜和紅外線反射膜等。 ° s 例如 選擇低 另一 用的電 要高電 發明所 然而 必須是 另外 不能使 在設備 鑒於 透明導 基本上570909 V. Description of the invention (1) ----- JL He belongs to the technical field of the invention The present invention relates to the high resistance used in the production of high-resistance conductive films with a resistivity of about 0. Sputtering target for resistive transparent conductive film 0 "(Sputtering tar got) and method for manufacturing high-resistance transparent conductive film using electric film *. A $ Electric film manufacturing method of resistive transparent conductive film. Previous technology, due to indium oxide-tin oxide (I rig 〇3-S η 〇2 composite oxide, hereinafter referred to as 'I T0') The film has high visible light transmittance and high conductivity, so it is widely used as a conductive film for liquid crystal display devices and glass. For the prevention, villagers use heating film and infrared reflective film, etc. ° s For example, choose a low electricity and high electricity invention. However, you must also make the device basically transparent in view of the transparency.

，就平板顯示（FPD)中所使用的透明導電膜來★兒， 電阻（電阻率約為2 X 1 Ο-4 Ω cm)的透明導電膜。 方面，從原理上來看，安裝在這樣的FPD等上而使 阻式按鍵操縱板用透明導電膜，作為要求特性，g 阻者薄膜電阻約為7 0 0〜1 0 0 〇 Q。 r J欠解決之問顥 北；？存在如下問題：若使用被用於卿的⑽，The transparent conductive film used in the flat panel display (FPD) is a transparent conductive film with a resistance (resistance of about 2 X 1 0-4 Ω cm). In terms of principle, a transparent conductive film for a resistive keypad is mounted on such an FPD or the like. As a required characteristic, the thin film resistance of the g-resistor is approximately 700 to 100 Q. r J owe a question to Hao Bei;? The problem is as follows:

這樣：能確保按鍵操縱板的強度。 右將濺鍍靶材自身的電阻變為高電阻，該 二=高頻磁控管價格便宜的阢磁控管濺鍍裝置’ 才又負較大的問題。 :樣的情;兄’本發明的目的係在於提供一種高電 =用_革巴材及高電阻透明導電膜之製造方法 -夠使用DC磁控管濺鍍裝置，可以製作成透明且This way: the strength of the keypad can be ensured. On the right, the resistance of the sputtering target itself becomes high resistance. The second problem is that the high-frequency magnetron is cheaper and the magnetron sputtering device is more expensive. : The same situation; brother ’The object of the present invention is to provide a method for manufacturing high-electricity = leather materials and high-resistance transparent conductive films-sufficient to use DC magnetron sputtering equipment, which can be made transparent and

C:\2D-CODE\91-O9\91113997.ptdC: \ 2D-CODE \ 91-O9 \ 91113997.ptd

570909 五、發明說明（2) 電阻的膜。570909 V. Description of the invention (2) Resistive film.

解決問題之手段 硖^ I ί 2解/夬上述問·，本發明的第1態樣在於高電阻 丄。殘鍍靶柯’是用於形成電阻率約為0.8〜10 UL的咼電阻導電膜的高電阻透明導電膜用氧化銦 糸錢鍍革巴材，其特微4 ^ _ , 疋’ S有氧化銦及根據品要的氧化 錫’亚^含有絕緣性氧化物。 ，孩，1怨樣中，通過在氧化銦系濺鍍靶材中添加絕緣 ，化勿彳以不使把材自身的電阻率產生大的變化，兩 板南所形成的透明導電膜的電阻率。 本^月的第2悲樣在於高電阻透明導電膜用濺鍍靶 其特徵是，在第i態樣中，过絕緣性氧化物係選自氧化 矽、，化鋁、氧化鈕、氧化铪、氧化鈮、氧化釔、氧化 鈽、氧化錯、氧化鈹、氧化鎮 鋇、氧化銳、氧化鈦、氧化錯 鎵、氧化鋅、氧化鉻、氧化鍾 和氧化綱族元素的至少一種。 ，該第2二態樣中人通過添加氧化石夕、氧化銘、氧化纽 巩化鈮、乳化釔、乳化鈽、氧化镨等，可以不使 的；阻率產生大的變化’而提高所形成的透明導電膜二 阻率。 JMeans for solving the problem 硖 ^ I ί 2 solution / 夬 The above question, the first aspect of the present invention is high resistance 丄. Residual plating target Ke 'is a high-resistance transparent conductive film with a resistivity of about 0.8 to 10 UL. It is an indium oxide rhenium-plated leather material. Its characteristics are 4 ^ _, 疋' S is oxidized. Indium and tin oxide, as required, contain insulating oxides. In the sample, by adding insulation to the indium oxide-based sputtering target, the chemical resistance of the transparent conductive film formed by the two plates south is not changed so that the resistivity of the material itself is not greatly changed. . The second tragedy of this month is the sputtering target for a high-resistance transparent conductive film. In the i-th aspect, the super-insulating oxide is selected from the group consisting of silicon oxide, aluminum oxide, oxide button, hafnium oxide, At least one of niobium oxide, yttrium oxide, hafnium oxide, tungsten oxide, beryllium oxide, barium oxide, sharp oxide, titanium oxide, gallium oxide, zinc oxide, chromium oxide, bell oxide, and elements of the oxide group. In this second aspect, people can increase the formation rate by adding stone oxide, oxide oxide, niobium oxide, emulsified yttrium, emulsified ytterbium, osmium oxide, etc .; the resistivity changes greatly, and the formation is improved The second resistivity of the transparent conductive film. J

氧化#5 氧化釩 氧化鐵 氧化勰 氧化硼 氧化鉬 氧化 氧化 氧化Oxidation # 5 Vanadium oxide Iron oxide Hafnium oxide Boron oxide Molybdenum oxide Oxidize Oxidize

本發明的第3態樣在於高 其特徵是，在第2態樣中， 石夕。 電阻透明導電膜用濺鍍靶材 上述絕緣性氧化物係為氧化The third aspect of the present invention is high, and in the second aspect, Shi Xi. Sputtering target for resistance transparent conductive film

C: \2D-CODE\91 ·09\9Π13997. ptd 第6頁 570909C: \ 2D-CODE \ 91 · 09 \ 9Π13997. Ptd page 6 570909

570909 五、發明說明（4) 化銦系濺錢乾材，可以不使乾材 二磁控管嶋形成電阻率為。·8二產= 變 的透明導電膜。 luxiuucm 本杳月的第8怨樣在於高電阻 &amp; 其特徵是，在第7能捭中，μ、+- Γ 玉膜之製造方法’ 石夕、氧化結Γ化和氧化·^絕緣性氧化物係選自氧化 氧化鈣 氧化鈒 氧化鐵 氧化鏍 氧化石朋 氧化翻 氧化 氧化 氧化磷 鈽、氧化镨、=、：:：、氧化鈮、氧“、氧化 顏、氧化銳、氧化鈦、氧化錯 叙、氧化辞、氧化鉻、氧化錳 和氧化鑭族元素的至少一種。 ^第Ml樣中，通過使用已添加有氧切、氧化銘、 濺鍍靶材，可以不使靶材自身的電阻的軋化銦糸 由DC磁控管濺鍵來形成電阻率為叫 化，= 導電膜。 0 10 x io 3 Qcm的透明 本發明的第9態樣在於高電阻透明導電 掣 二特徵是，在第8態樣中，上述絕緣性氧化物；= 在該第9態樣中，通過使用已添加有氧化矽的氧化銦系 =鍍靶材，可以不使靶材自身的電阻率產生大的變化，’而 由DC磁控管濺鍍來形成電阻率為〇. 8〜1〇 導電膜。 以Qcm的透明 本如明的第1 〇態樣在於高電阻透明導電膜之掣造方法， 其特徵是，在第7至9的任一態樣中，構成上述^邑^象性氧化 C.\2D-CODE\9l-〇9\9ni3997.ptd 第8頁 570909 五、發明說明（5) 物的相對於1莫耳銦，含有0.0 0 0 0 1〜〇·26莫耳。 在石亥第1 0態樣中，通過使 、 物的氧化鋼系滅鑛革巴材定量的絕緣性氧化 大的變化，而由DC磁控管==自身的電阻率產生 ㈣cm的透明導電膜。我鑛末形成電阻率為〇.8〜⑴ 本發明的第1 1態樣在於莴雷卩日、泰RS、曾 其特徵是，在第7至10的任電二透:月冑電膜之製造方法’ 耳銦，含有0〜0.3莫耳 悲樣中’锡（Sn)為相對於1莫 Φ J該第11態樣中’可以使用以氧化 含有氧化錫的濺鍍靶材，通 π琢而要 為0.8〜10χ則cn]的透明導電/…鍍來形成電阻率 本發明的冑f阻透明導電膜用㈣㈣❹ 體、根據需要含有氧化錫、並含有:巩鉬為主 燒結體，各氧化物可以以氧化物本來的形：化：的匕物 物形態、或固溶體形態存在，沒有特別限；。或腹5氧化 在此，作為絕緣性氧化物，可以列舉 # 氧化鎂 氧化鍅 氧化猛 镨、氧化錢 銃、氧化鈦 鋅、氧化鉻 族元素等。 作為絕緣性氧化物 紹、氧化组、氧化給、氧化銳、氧…= 氧化鋇、氧化 氧化鎵、氧化 氧化碌和氧化鑭 氧化鈣、氧化鎇 氧化飢、氧化石朋 氧化鐵、氧化鉬 較佳在0〜1 6 0 〇 °c範圍 ·、 能量比氧化銦低的絕緣性氧化物。這是因標準生成 比，化學性更穩定，難以分解。 ·、'、〃氧化銦相570909 V. Description of the invention (4) Indium-based alloy sputtered dry materials can prevent the resistivity of the two magnetrons from forming dry materials. · 8 secondary product = changed transparent conductive film. luxiuucm The eighth complaint of this month is high resistance &amp; It is characterized in that in the seventh energy, μ, +-Γ Jade film manufacturing method 'Shi Xi, oxidized junction Γ and oxidation · ^ insulation oxidation The material is selected from the group consisting of calcium oxide, osmium oxide, iron oxide, hafnium oxide, stone oxide, oxidized phosphorus oxide, hafnium oxide, =, :::, niobium oxide, oxygen, oxide, sharp oxide, titanium oxide, oxide At least one of the following elements: oxide, chromium oxide, manganese oxide, and lanthanum oxide. ^ In the M1 sample, by using the target with oxygen cut, oxide, and sputtering, it is possible to prevent the resistance of the target itself. Rolled indium-rhenium is formed by sputtering a DC magnetron to form a resistivity, = conductive film. 0 10 x io 3 Qcm transparent The ninth aspect of the present invention is a high-resistance transparent conductive switch. In the eighth aspect, the above-mentioned insulating oxide; = In the ninth aspect, by using an indium oxide system to which a silicon oxide has been added = a plating target, the resistivity of the target itself does not change greatly, 'And the resistivity is formed by DC magnetron sputtering to 0.8 ~ 10 The 10th aspect of Qcm's transparent and unmistakable state is a method for fabricating a high-resistance transparent conductive film, which is characterized in that in any of the 7th to 9th aspects, the above-mentioned oxidative oxidation is constituted. C. \ 2D-CODE \ 9l-〇9 \ 9ni3997.ptd Page 8 570909 V. Description of the invention (5) The content of the substance is 1 mol indium relative to 1 mol, which contains 0.0 0 0 0 1 ~ 〇 · 26 mol. In the 10th state of Hai, the transparent conductive film of ㈣cm was produced by the DC resistivity of the magnetron == itself by changing the insulation oxidation of the steel oxide-based degaussing leather material by a certain amount. The resistivity at the end of the ore formation is 0.8 to 的. The first aspect of the present invention lies in the lettuce thirst day, Thai RS, and was characterized in that any of the 7th to 10th electricity translucent: the production of the moon film Method 'Ear indium contains 0 to 0.3 moles of tin.' Sn (Sn) is relative to 1 mole Φ J in the eleventh aspect. 'Sputtering targets containing oxidized tin oxide can be used. The resistivity of the transparent conductive film of 0.8 to 10 x cn] is used to form the resistivity. The ㈣㈣❹f-blocking transparent conductive film of the present invention contains tin oxide as needed, and contains sintered molybdenum as the main component. Each oxide can exist in the original form of the oxide: the form of a dagger or a solid solution, and there is no particular limitation; or the oxidation of oxygen is here, and as an insulating oxide, # magnesium oxide can be listed Rhenium oxide, Mammoth oxide, Rhenium oxide, Zinc titanium oxide, Chromium oxide group elements, etc. As an insulating oxide, oxide group, oxide feed, oxide oxide, oxygen ... = barium oxide, gallium oxide, oxide oxide and Lanthanum oxide, calcium oxide, hafnium oxide, iron oxide, and molybdenum oxide are preferably insulating oxides having a range of 0 to 160 ° C and having lower energy than indium oxide. This is because the standard generation ratio is more chemically stable and difficult to decompose. ·, ', Rhenium indium oxide phase

570909 五、發明說明（6) 較佳絕緣性氧化物的含有量處於 1莫耳銦，構成該絕緣性氧化物的' 的範圍β :相對於 耳。原因是，若比該範圍少，天’、‘、、0.00 0 0 1〜0.26莫 且’若比該範圍多，則所形成夂：=果不顯著’並 並且，錫（Sn)相對於以耳銦為0〜；7/且的€阻過高。 的情況下，相對於1莫耳銦，錫 .莫耳。在含有錫 的範圍，較佳為。.。卜G.15莫耳的V圍為。·=二莫〜耳 〇. 1莫耳的範圍。如果處於該範圍内、、、、· 鍍靶材的載流子電子的密度和移動声/ °以適當控制濺 好的範圍内。並且，如果超出該範圍進,電性處於良 錢乾材的載流子電子的移動度降低，並使ς σ祕==使滴: 方向發展，所以不可取。 向劣化的 本發明的高電阻透明導電膜用濺鍍靶材具有可 管濺鍍進行濺鍍的程度的電阻值，可以形成 =&amp; 〜10 X ΙΟ-3 Ω cm的透明導電膜。 …為〇. 8 當然，使用高頻磁控管激鍍裝置也可以形成電阻率為 〇·8〜10x l〇-3Dcm的透明導電膜。 ” 下面，說明本發明的濺鍍靶材之製造方法，這一 例，製造方法不侷限於此。 14 ^ ^ 首先，構成本發明的濺鍍用靶材的初始原料，一#曰 Iri2〇3、Sn〇2、Si〇2的粉末。而且，也可以以這些單質又疋 合物、複合氧化物等為原料。使用單質、化合物'，'+b 預先經過變為氧化物的步驟。 而要 對於以所期望的配合率將运些原料粉進彳、、曰人 u此a 、成型的570909 V. Description of the invention (6) The content of the preferred insulating oxide is 1 mole of indium, which constitutes the range 'of the insulating oxide β: relative to the ear. The reason is that if it is less than this range, the day ',' ,, 0.00 0 0 1 ~ 0.26, and 'if it is more than this range, the formation of 夂: = 果 不 Significant' and the tin (Sn) relative to Ear indium is 0 ~; 7 / and the resistance is too high. In the case of tin, compared to 1 mole of indium, tin. Mole. In the range containing tin, it is preferable. .. BU G.15 Mor's V circumference is. · = 2 moles to ears 0.1 moles range. If it is within this range, the density of the carrier electrons and the moving sound / ° of the plated target material are appropriately controlled within the range of good sputtering. In addition, if it exceeds this range, the mobility of carrier electrons with good electrical properties in the dry material will be reduced, and σσ = = will make the direction of development, so it is not desirable. The degraded sputtering target for a high-resistance transparent conductive film of the present invention has a resistance value to the extent that it can be sputtered by tube sputtering, and can form a transparent conductive film having a thickness of about 10 × 10-3 Ω cm. … Is 0.8 Of course, a transparent conductive film having a resistivity of 0.8 to 10 × 10-3 Dcm can also be formed using a high-frequency magnetron laser plating device. Next, the manufacturing method of the sputtering target of the present invention will be described. This example is not limited to this. 14 ^ ^ First of all, the initial raw materials constituting the sputtering target of the present invention, ## Iri2〇3, Sn〇2, Si〇2 powder. In addition, these simple substances and admixtures, composite oxides, etc. can also be used as raw materials. Using simple substances, compounds ',' + b through the step of turning into oxide in advance. At the desired blending rate, some raw material powder will be transported into the mold,

C:\2D-OODE\91-O9\91113997.ptd 第10頁 570909 五、發明說明（7) 方法不作特別的限定’可以使用先前公知的各種濕式法戍 乾式法。 、/〆 作為乾式法來說，可列舉出冷壓（Co Id Press)法或熱壓 (Hot Press)法夺。在冷堡法中’將混合粉填充到壓模 中，製作成成型體，在大氣氛圍氣下或氧氣氛圍氣丁進行 燒製、燒結。在熱壓法中’將混合粉直接置於壓模内進行 燒結。 就濕式法來說，例如，較佳使用過濾成型法（參照日本 專利特開平1 1 -286 0 0 2號公報）。該過濾式成型^是'使用 從陶曼原料於漿中減壓排出水分而得到成型體的由非水、、容 性材料構成的過濾式壓模，並調製由混合粉、離子交換水 和有機添加劑組成的淤漿，將該淤漿注入過濾式壓模中， 只從篩檢程式這側減壓排出淤漿中的水分而製作成型體， 將所得到的陶瓷成型體乾燥脫脂後，進行燒製。上述$、慮 式壓模，是由具有1個以上除水孔的成型用下模、配置^於‘“' 該成型用下模上的具有通水性的筛檢程式、以及通過用於 密封該篩檢程式的密封件從上面進行挾持的成型用模板構 成’可分別拆卸地組裝上述成型用下模、成型用模板、穷 封件、以及篩檢程式，只從該篩檢程式- 山C: \ 2D-OODE \ 91-O9 \ 91113997.ptd Page 10 570909 V. Description of the invention (7) The method is not particularly limited ′ Various previously known wet methods and dry methods can be used. , / 〆 As a dry method, a cold press (Co Id Press) method or a hot press (Hot Press) method can be cited. In the cold-casting method ', the mixed powder is filled into a stamper to form a molded body, and the mixture is fired and sintered in an atmospheric atmosphere or an oxygen atmosphere. In the hot pressing method, the mixed powder is directly placed in a stamper and sintered. As for the wet method, for example, a filtration molding method is preferably used (refer to Japanese Patent Laid-Open No. 1-286 0 02). The filter-type molding method is a filter-type mold made of a non-aqueous, capacitive material obtained by depressurizing the water from the slurry of Taurman raw materials in a slurry to obtain a molded body, and is prepared by mixing powder, ion-exchanged water, and organic The slurry consisting of additives is injected into the filter die, and the moisture in the slurry is discharged under reduced pressure only from the side of the screening program to produce a molded body. The obtained ceramic molded body is dried and degreased, and then fired. system. The above-mentioned compression mold is composed of a lower mold for molding having one or more water removal holes, a water permeability screening program arranged on the lower mold for molding, and a method for sealing the mold. The sealing mold of the screening program is formed from a molding template that is held from above. The molding lower mold, the molding template, the poor seal, and the screening program can be detachably assembled separately from the screening program.

。 p似征叭绝側減壓排出淤漿 〜1 6 0 0 °c，更佳為 成型為給定尺寸的 在各種方法中，燒製溫度較佳為1300 1 3 0 0〜1 4 5 0 °C。然後，實施用於加工、 機械加工，製成|巴材。 [發明之實施形態]. The pressure-reduced slurry is discharged at a pressure of ~ 160 ° C, preferably formed into a given size. In various methods, the firing temperature is preferably 1300 1 3 0 0 ~ 1 4 5 0 ° C. Then, it is used for processing and machining to make it into a bar material. [Embodiment of Invention]

C:\2D-CODE\91-O9\91113997.ptd 第11頁 570909C: \ 2D-CODE \ 91-O9 \ 91113997.ptd Page 11 570909

570909 五、發明說明（9) 準備純度&gt;99_ 99%的1112〇3粉和Sn〇2粉。按照Sn〇2為〗〇wt% 嗆InA為90wt%的比率且全量為15]^準備該粉末，採用過 ^成里法得到成型體。錢，在氧氣氛圍氣、155Gt：條件 ’對该燒製體進行8小時的燒製、燒結。加工該燒結 體，得到相對於理論宓厣的姑, 免材的體電阻率為厂二 管ί與實施例1相同的條件下，通過dc磁控 :=fi Λ’得到圖2那樣的針對氧氣分壓的電阻率 和波長55〇nm的透過率之間的關係。 午 (實施例2 ) 準備純度&gt; 9 9 · 9 9 %的I n 〇松ς ^ Λ 的SiO,。按照_2為1〇2^%、Si〇 =二Ί&gt;99·9% 的比率且全量匐.5Kg準備該粉2 : 了草1二為8〇wt% Si相當於約0.26莫耳），採用過相對於1莫耳In而言， 後，在氧氣氛圍氣、i 55〇 t條件‘下型法得到成型體。然 時的燒製、燒結。加工該燒結歸，丄對該燒製體進行8小 相對密度為100%的靶材。：靶：：：相：：理論密度的 cm。 的體電阻率為4. 〇 χ 1()-4 Ω 使用該革巴材，在與實施例1相同的條株下、s 管濺鍍來成膜，得到厚度為12〇〇。』悚件下，通過DC磁控 電阻率和透過率，得到；3那樣的八的膜：二過分析該膜的 和波長5 5 0nm的透過率之間的關係 $虱氣y刀壓的電阻率 (貫施例3 ) ''570909 V. Description of the invention (9) Prepare 1112 03 powder and Sn 02 powder with a purity of> 99-99%. The powder was prepared in accordance with the ratio of SnO2 to 0wt% and InA to 90wt%, and the total amount was 15] ^, and a molded body was obtained by a method of sintering. In an oxygen atmosphere, 155 Gt: conditions, the fired body was fired and sintered for 8 hours. The sintered body was processed to obtain the bulk resistivity of the material as compared with the theoretical one. Under the same conditions as in Example 1, the dc magnetron: = fi Λ 'was used to obtain the oxygen resistance for oxygen as shown in Figure 2. Relationship between resistivity at partial pressure and transmittance at a wavelength of 55 nm. Noon (Example 2) Prepare SiO with a purity of &gt; 99.99% I n 〇 pine 松 ^ Λ. Prepare this powder 2 at a ratio of _2 to 10% ^, Si0 = 99% and 99.9%, and the total amount of 匐 .5Kg: Cao grass 1 is 80% by weight (Si is equivalent to about 0.26 mole), A molded body was obtained by using a molding method under conditions of 1 mol and 1 mol of In in an oxygen atmosphere. Then firing and sintering. After processing the sintered material, the fired body was subjected to 8 small targets with a relative density of 100%. : Target ::: phase :: cm of theoretical density. The volume resistivity was 4.0 χ 1 ()-4 Ω. Using this leather material, a film was formed by s-tube sputtering under the same strain as in Example 1 to obtain a thickness of 1200. 『Under the horror piece, it is obtained by DC magnetron resistivity and transmittance; 3 films such as 8: Second, analyze the relationship between the film and the transmittance at a wavelength of 5 50 nm. Rate (performed in Example 3) ''

570909 五、發明說明（ίο) 準備純度〉99.9 9%的1112〇3粉和Sn〇2粉、以及純度〉9 9 9% = S1〇2粉。按照Sn()2 yQwt%、叫為5”％、㈣為 勺比率且全重為1. 5Kg準備該粉末（相對於丨莫耳0 莫耳），採用過滤成型法得到成型體：缺 日、ί η”、1 450 c條件下，對該燒製體進行8小 ::粍m。力口工該燒結體’得到相對於理論密产的 相對推度為100%的靶材。該靶材的體電阻率為U : cm 〇 ^570909 V. Description of the invention (ίο) Prepare 1112 03 powder and Sn 02 powder with purity> 99.9 9%, and purity> 99 9% = S10 02 powder. The powder was prepared according to Sn () 2 yQwt%, called 5 "%, ㈣ is a spoon ratio and the total weight was 1.5Kg (relative to 丨 0 Moor), and the molded body was obtained by filtration molding method: Under the conditions of ί η ”and 1 450 c, the calcined body was subjected to 8 hours :: 粍 m. The force sintered body 'obtained a target material having a relative thrust of 100% relative to the theoretical close production. The volume resistivity of this target is U: cm 〇 ^

j : 1 ’在與實施例&quot;目同的條件τ，通· 二得到厚度為1 200 Α的膜。分析該膜的” 率和透過率’顯示出與圖！近乎同等的氧氣分壓特性。 =以上、果可以看出’貫施例！〜3的體電阻率為1 。 cm數量級，顯=出與比較例丨所示的先前Ιτ〇靶材近乎同筹 的值’ D C磁控管濺;錢是可以的。 二ί:知二與比較例1所示的先前1το膜的氧氣分壓依賴 性相比較’貫轭例1〜3所示的也具有近乎同等的特性，可 以使用先珂的I TO膜的成膜方法。j: 1 ′ Under the same conditions τ as those in the embodiment, a film having a thickness of 1 200 Å was obtained. The analysis of the "rate and transmittance" of the film showed almost the same oxygen partial pressure characteristics as the picture. = Above, the results can be seen through the examples! The volume resistivity of ~ 3 is in the order of cm. The value is almost the same as that of the previous Iτ〇 target shown in Comparative Example 丨 DC magnetron sputtering; money is okay. Second: Knowing the oxygen partial pressure dependence of the previous 1το film shown in Comparative Example 1 Compared with those shown in Examples 1 to 3, they also have almost the same characteristics, and a film forming method of Syntec's I TO film can be used.

與比較例1所示的先前IT0膜的較佳氧氣分壓中的電阻 相比較，實施例1的電阻率變為i 〇倍的大小，並且， 實施例2來說，變為丨〇 〇倍的大小。 ’ 一實際上’若將適用於商品時的膜厚設定約為】5〇 A， ’薄膜電阻約為7〇〇Ω。$一方面，在實施例丨 。，：巧電阻約為700 0 Ω。另外，若將膜厚設定為15〇〇 A，在貫施例1中，薄膜電阻約為7 0 Ω。另一方面，在,Compared with the resistance in the preferred partial pressure of oxygen of the previous IT0 film shown in Comparative Example 1, the resistivity of Example 1 becomes a magnitude of IO times, and, for Example 2, it becomes 〇 × times. the size of. "In fact," if the film thickness applied to a product is set to about 50 A, the sheet resistance is about 700 Ω. $ On the one hand, in the embodiment 丨. ,: The resistance is about 700 0 Ω. In addition, if the film thickness is set to 15,000 A, the sheet resistance is about 70 Ω in Example 1. On the other hand,

570909 五、發明說明（11) 施例2中，薄膜電阻約為7 0 0 Ω。 另外’可得知通過增加Sn02的添加量，可以生成載流 子’具有降低電阻的傾向。由此可知，不僅s i &amp;，而且通 過调整Sn〇2的添加量也可以控制電阻率。 可得到最佳的 由以上可知，通過控制Sn〇2、s丨〇2的量 電阻率。 [發明之效果] 如以上所說明的，本發明可以提供一 約為0.8〜10xl0〜的透明導電膜 且升;成電阻率570909 V. Description of the invention (11) In Example 2, the sheet resistance is about 700 Ω. In addition, it can be seen that by increasing the amount of Sn02 added, carriers can be generated 'which tends to reduce the resistance. This shows that not only s i &amp; but also the resistivity can be controlled by adjusting the amount of Sn02 added. From the above, it can be known that by controlling the amount of Sn02, s02, resistivity. [Effect of the Invention] As explained above, the present invention can provide a transparent conductive film of about 0.8 ~ 10xl0 ~ and increase the resistivity.

用氧化銦系滅鐘乾材，即，含有氧化銦和根掳；明導電港 錫、且含有絕緣性氧化物的高電阻透明導而要的氧化 材，由此，可以採用基本的如磁控管濺 t用蹲鍍靶 成透明^電阻的膜的高電阻透明導電膜置來製造能开iIndium oxide-based bell-extinguishing dry materials, that is, oxide materials containing indium oxide and root thallium; bright conductive Hong Kong tin and containing high-resistance transparent insulating oxides; therefore, basic materials such as magnetron sputtering can be used. t Use a high-resistance transparent conductive film with a plated target to form a transparent ^ resistive film

C:\2D-CODE\9】-09\91】13997.ptd 第15頁 570909 圖式簡單說明 圖1為顯示實施例1的針對氧氣分壓的電阻率和波長 5 5 0 n m的透過率之間關係的圖。 圖2為顯示比較例1的針對氧氣分壓的電阻率和波長 5 5 0 n m的透過率之間關係的圖。 圖3為顯示實施例2的針對氧氣分壓的電阻率和波長 5 5 0 n m的透過率之間關係的圖。C: \ 2D-CODE \ 9】 -09 \ 91】 13997.ptd Page 15 570909 Brief Description of Drawings Figure 1 shows the resistivity against the partial pressure of oxygen and the transmittance at a wavelength of 5 50 0 nm in Example 1. Relationship diagram. FIG. 2 is a graph showing the relationship between the resistivity with respect to the partial pressure of oxygen and the transmittance at a wavelength of 5 50 nm in Comparative Example 1. FIG. Fig. 3 is a graph showing the relationship between the resistivity against the oxygen partial pressure and the transmittance at a wavelength of 5 50 nm in Example 2.

第16頁Page 16

Claims (1)

1. 一種高電阻透明導電膜用濺鍍 阻率約為〇. 8〜1 ο X 1 Ο-3 Q cm的古雷 ’ ”係用於形成電 導電膜用氧化銦系滅鑛革巴材，Γ特電膜的高電阻透明 含有氧化銦及根據需要的氧在於·· 物。 锡、並且含有絕緣性氧化 2 ·如申请專利範圍第1項之高 材，其中， 透明‘電膜用濺鑛革巴 上述絕緣性氧化物係選自氧化矽、 ^ 化給、氧化銳、氧化紀、氧化鈽、氧化夢、：：乳匕组：氧 鎂、氧化鈣、氧化勰、氧化鋇 、’曰：乳匕鈹、氧化 :、氧化飢、氧化.、氧化鎵、= : Si氧化鐵、她、氧化鱗和氧化綱族二= 3·如申請專利範圍第2項之高電 材，其中，上述崎性氧化^\阻透明導電膜㈣鑛革巴 ,，丄 本1王乳化物係為氧化矽。 4.::請專利範圍第！項之高電阻 才’ J中’構成上述絕緣性氧化物的 電 銦，含有0 · 0 0 0 〇 1〜〇 · 2 6莫耳。 、；、、、相對方、1莫耳 5·如申請專利範圍第2項之 材，其中，構成上述絕緣性^化電阻透月導電膜用濺鑛乾 銦，含有0· 0 0 0 0 1〜〇. 26莫耳。 素為相對於1莫耳 6.:申請專利範圍第3項 材，其中，構成上述絕緣性氧化物的元素導電膜用 銦，含有0.00001〜0·26莫耳。 馮相對於1莫耳1. A high-resistance transparent conductive film with a sputter resistance of about 0.8 to 1 ο X 1 Ο-3 Q cm Gure '"" is used to form an indium oxide-based demineralized leather for electrical conductive films, Γ The high-resistance transparent film of the special electrical film contains indium oxide and oxygen as required. Tin. It also contains insulating oxides. 2. As a high-grade material in the scope of patent application No. 1, among which, the transparent 'electric film's spattered leather The above-mentioned insulating oxides are selected from the group consisting of silicon oxide, silicon oxide, oxidized oxide, oxidized period, hafnium oxide, oxidized dream, :: milk dagger group: magnesium oxide, calcium oxide, hafnium oxide, barium oxide, and said: milk Beryllium, oxidized :, oxidized, oxidized, gallium oxide, =: Si iron oxide, her, oxidized scale, and oxidized group 2 = 3. As the high-electric material of the scope of the patent application, the above-mentioned rugged oxidation ^ \ Transparent transparent conductive film ㈣Ge Geba, 丄 本 1 emulsification system is silicon oxide. 4. :: Please apply for the high resistance of the patent scope item! 'J 中' constituting the above-mentioned insulating oxide of indium , Containing 0 · 0 0 0 〇1 ~ 〇 · 2 6 moles.,; ,,, opposite, 1 mole 5 · The material for the second item of the patent application scope, wherein the dry indium that forms the above-mentioned insulating varistors for the translucent conductive film contains splattered dry indium, which contains 0. 0 0 0 0 1 to 0.26 mol. 6 .: The third material in the scope of patent application, in which the indium for the element conductive film constituting the above-mentioned insulating oxide contains 0.00001 to 0.26 mol. Feng relative to 1 mol C:\2D-CODE\91-09\91113997.ptd 第17頁 570909C: \ 2D-CODE \ 91-09 \ 91113997.ptd Page 17 570909 7.如申請專利範圍第1至6項 膜用滅鐘乾材，其中，錫（Sn) 0 · 3莫耳。 中任一項之高電阻透明導電 為相對於1莫耳銦，含有〇〜 •士申明專利摩巳圍弟；[至6項中 膜用濺鍍靶材，豆中，诵、# 員之同電阻透明導電 8〜10 X 10-3 Qcm的透明導電膜。 乂电阻半為〇· 9 ·如申請專利範圍第7項之莴 材，豆中，铺「说快一 電透明導電膜用濺鍍靶 Ω 日日f 管賤錄形成電阻率為U〜1〇χ 10-3 Qcm的透明導電膜。 υχιυ 1 0 · —種高電阻透明導電膜制 使用含有氧化銦及根據需要的氧Μ，’並且含有1在^匕 為0· 8〜1 0 X 1 〇-3 的透明導電膜。 方1專利範圍第10項之高電阻透明導電膜之製造 法，，、中，上述絕緣性氧化物係選自氧化 氧化组、氧化給、氧化銳、氧化纪、氧化 ：：紹氧 化鈹：氧化鎮、氧化鈣、氧化勰、氧化鋇、氧化銳：： 鈦、氧化鍅、氧化釩、氧化硼、氧化鎵、氧化鋅、氧化 二、二匕錳、氧化•、氧化銦、氧化磷和氧化鑭族元素的7. According to claims 1 to 6 of the scope of application for patents, dried dichroic materials for membranes, in which tin (Sn) 0 · 3 moles. The high-resistance transparent conductive of any one is relative to 1 mol of indium, and contains 0 ~ • Shi declared patent Capricorn Sister; [to 6 items of sputtering target for medium film, bean, chanting, # member of the same Resistive transparent conductive 8 ~ 10 X 10-3 Qcm transparent conductive film.乂 The resistance is half of 0.9. · If the lettuce and item 7 in the scope of the patent application are applied to the bean, spread the "target of a transparent conductive film with a sputtering target Ω. χ 10-3 Qcm transparent conductive film. υχιυ 1 0 · — a kind of high-resistance transparent conductive film made of containing indium oxide and oxygen M as required, and containing 1 in the range of 0 · 8 ~ 1 0 X 1 〇 -3 transparent conductive film. The manufacturing method of the high-resistance transparent conductive film according to the tenth item of the patent scope of Patent 1, wherein, the insulating oxide is selected from the group consisting of oxidizing and oxidizing, oxidizing, oxidizing, oxidizing, and oxidizing. ::: Beryllium oxide: Oxidation town, calcium oxide, hafnium oxide, barium oxide, sharp oxide :: titanium, hafnium oxide, vanadium oxide, boron oxide, gallium oxide, zinc oxide, second oxide, two manganese oxide, oxidation •, oxidation Indium, phosphorus oxide and lanthanum oxide C:\2D-CODE\91-O9\91113997.ptd 第18頁 1 2·如申請專利範圍第〗丨項之高電阻透明導電 方法，其中，上述絕緣性氧化物係為氧化矽。、乂仏 1 3.如申請專利範圍第丨〇項之高電阻透明導電 、皮 方法’其中’構成上述絕緣性氧化物的^素為相對於= 570909 六、申請專利範圍 耳銦，含有0.00001〜0.26莫耳。 1 4.如申請專利範圍第11項之高電阻透明導電膜之製造 方法，其中，構成上述絕緣性氧化物的元素為相對於1莫 耳銦，含有0.00001〜0.26莫耳。 1 5.如申請專利範圍第1 2項之高電阻透明導電膜之製造 方法，其中，構成上述絕緣性氧化物的元素為相對於1莫 耳銦，含有0.00001〜0.26莫耳。 1 6.如申請專利範圍第1 0至1 5項中任一項之高電阻透明 導電膜之製造方法，其中，錫（Sn)為相對於1莫耳銦，含 有0〜0 . 3莫耳。C: \ 2D-CODE \ 91-O9 \ 91113997.ptd Page 18 1 2 · For the high-resistance transparent conductive method according to the scope of patent application, the above-mentioned insulating oxide is silicon oxide.乂 仏 1 3. If the high-resistance transparent conductive and skinning method of item 丨 0 of the patent application scope 'wherein' constitutes the above-mentioned insulating oxide is relative to 570909 6. Application patent scope ear indium contains 0.00001 ~ 0.26 moles. 1 4. The method for manufacturing a high-resistance transparent conductive film according to item 11 of the scope of patent application, wherein the element constituting the insulating oxide is 0.001 to 0.26 mol relative to 1 mol of indium. 1 5. The method for manufacturing a high-resistance transparent conductive film according to item 12 of the scope of the patent application, wherein the element constituting the insulating oxide is 0.00001 to 0.26 mol relative to 1 mol of indium. 1 6. The method for manufacturing a high-resistance transparent conductive film according to any one of claims 10 to 15 in the scope of patent application, wherein tin (Sn) is 0 to 0.3 mol relative to 1 mol of indium . C:\2D-C0DE\91-09\91113997.ptd 第 19 頁C: \ 2D-C0DE \ 91-09 \ 91113997.ptd page 19
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