TW569355B - Ablation means for adhesive tape, ablation device for adhesive tape, ablation method for adhesive tape, pick-up device for semiconductor chip, pick-up method for semiconductor chips, manufacturing method and device for semiconductor device - Google Patents

Ablation means for adhesive tape, ablation device for adhesive tape, ablation method for adhesive tape, pick-up device for semiconductor chip, pick-up method for semiconductor chips, manufacturing method and device for semiconductor device Download PDF

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Publication number
TW569355B
TW569355B TW091122045A TW91122045A TW569355B TW 569355 B TW569355 B TW 569355B TW 091122045 A TW091122045 A TW 091122045A TW 91122045 A TW91122045 A TW 91122045A TW 569355 B TW569355 B TW 569355B
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Taiwan
Prior art keywords
adhesive tape
suction
semiconductor wafer
peeling
wafer
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TW091122045A
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Chinese (zh)
Inventor
Tetsuya Kurosawa
Shinya Taku
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y10T156/1132—Using vacuum directly against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168—Gripping and pulling work apart during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

The present invention provides an ablation means for adhesive tape, ablation device for adhesive tape, ablation method for adhesive tape, pick-up device for semiconductor chip, pick-up method for semiconductor chip, manufacturing method for semiconductor device and manufacturing device for semiconductor device. The object of the present invention is to reduce the badness on semiconductor chips, such as cracks and fragments, and to manufacture high quality semiconductor device and eliminate the reduction of manufacturing yield. The solution of the ablation means for ablating the adhesive tape 24 adhered on the semiconductor wafer 1 in single piece is characterized in using the porous material 2 for dividing into at least two adhesive areas 2-1 to 2-7 along the ablation direction of the adhesive tape 24. Because the present invention can effectively attach and fix the semiconductor wafer in single piece at the ablation position corresponding to the adhesive tape; it can prevent generating cracks and fragments when ablating the adhesive tape from the semiconductor chip.

Description

569355 A7 B7 經濟部智慧財產局員工消費合作社印发 五、發明説明（1) 〔本發明所屬的技術領域〕 本發明是有關半導體裝置之製造技術，特別是有關剝 離接著在單片化的半導體晶圓的黏接性帶的剝離機構及剝 離方法、剝離接著在單片化的半導體晶圓的黏接性帶之剝 離裝置及剝離方法、具備有剝離接著在單片化的半導體晶 圓的黏接性帶之剝離機構，拾取各個半導體晶片之拾取裝 置及拾取方法、具備該些剝離機構、剝離裝置或拾取裝置 之半導體裝置之製造裝置、及半導體裝置之製造方法。 〔習知技術〕 一般在半導體裝置的製造工程中，元件形成結束的半 導體晶圓會沿著切割線或晶片分割線被分開，經由單片化 形成複數的半導體晶片。第53圖（a)、（b)是表示單片化的 半導體晶圓（半導體晶片）100之狀態，被黏貼在黏接性帶 101a。（a)圖是立體圖，（b)圖是沿其A— A線的斷面圖。 各個半導體晶片100是從上述黏接性帶l〇la被拾取，經 過引線框和對TAB膠帶的裝配工程或是對封裝的密封工 程等實裝工程而完成半導體裝置。 在拾取上述各個半導體晶片100之際，將半導體晶圓 的黏接性帶l〇la的黏貼面之背面，黏貼於被黏貼在晶圓 環之另一黏接性帶l〇lb之後，剝離上述黏接性帶101a， 將晶圓環裝配在拾取裝置來拾取各個半導體晶片1〇〇。 第54圖是由黏接性帶101b拾取習知拾取裝置方面的 半導體晶片1 00的主要構成部的放大斷面圖。將半導體晶 i n 批衣 訂 务 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -4 - 569355 經濟部智慧財4局g(工消費合作社印製 A7 B7 五、發明説明（2) 片100從黏貼在晶圓環的黏接性帶101b剝離並拾取時， 從半導體晶片100的背面側介設黏接性帶l〇lb並令突起 銷（針）102突出（上昇），將半導體晶片100利用黏接性帶 101b的彈力而剝離。上述突起銷102是配置在對應上述 半導體晶片100的各角隅部或中央部近傍的位置，基部被 裝配在銷夾具103。 將半導體晶片100從黏接性帶101b剝離的順序，是 先令拾取對象的半導體晶片100位於突起銷102上地移動 固定黏貼半導體晶片100的黏接性帶101b的保持台。其 次，爲了判別剝離的半導體晶片1 00的位置檢測和良品/ 不良品而進行標記檢查等，以真空吸引備用夾具104的內 部，將黏接性帶101b吸附固定在備用夾具104的上面。 以此狀態令安裝突起銷1 02的銷夾具1 〇3上昇，使突起銷 102自備用夾具104的上面突出，介設黏接性帶l〇lb而 將半導體晶片1 00自背面側突起。 可是近年欲將半導體晶片內裝於例如卡片狀的薄封裝 ，故強烈希望半導體晶片薄型化，將半導體晶圓的背面進 行硏磨、抛光及蝕刻而薄到1 〇〇μm以下。但是將半導體 晶片薄到1 0 0 μ m以下的話，黏貼於被黏貼在晶圓環的另 一黏接性帶1 0 1 b後’於剝離黏接性帶1 〇 1 a之際，半導體 晶片會破裂，產生所謂的裂痕而令製造良品率降低，或者 半導體晶片100互相接觸而產生屑片，即有所謂半導體裝 置品質降低的問題。而於拾取各個半導體晶片之際，也會 產生裂痕和屑片。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) -5- 569355 經濟部智慧財產局員工消費合作社印製 A7 _B7_五、發明説明（3) 其次，針對半導體晶片厚度爲100μιη以下之時的上 述裂痕的問題，藉由第55圖（a)、（b)及第56圖（a)、（b)做 詳細的說明。半導體晶片的厚度如上述爲非常薄的話，連 半導體晶片1〇〇的外周部（特別是角隅部分）也會被剝開， 由於自突起銷102的上昇剝離黏接性帶1〇1的速度很慢， 如第55圖（a)所示，於剝離前半導體晶片1〇〇爲凹狀彎曲 ，如第55圖（b)所示，直到最後產生裂痕。並如第56圖（a) 、（b)所示，以介設黏接性帶101的狀態，將半導體晶片 100的背面側和用突起銷1 02推起的話，在只有角隅部不 剝離的狀態，裂痕會深入到半導體晶片1 〇〇和突起銷102 的接觸部，或者突起銷102會貫通，直至晶片產生裂痕。 如果半導體晶片的厚度爲100%m以上，自半導體晶片100 和黏接性帶10 1的接著，半導體晶片的強度（厚度方向）很 強的緣故，此種現象很難發生。 像這樣，半導體晶片薄型化的話，半導體晶片的抗折 強度變低，習知的黏接性帶的剝離機構、剝離方法及習知 的半導體晶片的拾取裝置、拾取方法中，無法避免裂痕、 屑片等之品質下降和良品率下降，不光是該些機構、裝置 、方法，就連具備該些的半導體裝置的製造裝置、半導體 裝置的製造方法也希望被改善。 〔發明欲解決的課題〕 如上所述，習知的黏接性帶的剝離機構及剝離方法， 以及習知的半導體晶片的拾取裝置及拾取方法，是隨著半 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " — -6- (請先閱讀背面之注意事項再填寫本頁) .裝- 訂 線 經濟部智慈財產局員工消費合作社印製 569355 A7 B7 五、發明説明（4) 導體晶片的薄型化，於黏接性帶剝離時或拾取時半導體晶 片會發生裂痕、屑片，使半導體晶片損傷，具有導致半導 體裝置品質降低、良品率降低的問題。 本發明乃爲有鑑於如上述事情的發明，其目的在於提 供一減低晶片裂痕、屑片等不良，而製造高品質的半導體 裝置，同時也能抑制製造良品率降低的黏接性帶之剝離機 構、黏接性帶之剝離裝置、黏接性帶之剝離方法、半導體 晶片之拾取裝置、半導體晶片之拾取方法、半導體裝置之 製造方法及半導體裝置之製造裝置。 〔用以解決課題的手段〕 本發明的黏接性帶之剝離機構乃屬於剝離接著在單片 化的半導體晶圓的黏接性帶之剝離機構，其特徵爲具備有 :針對黏接性帶的剝離方向，利用分成兩個吸附區域的多 孔質材來吸附固定前述半導體晶圓側的之吸附部。 而本發明的半導體裝置之製造裝置乃具備有：針對黏 接性帶的剝離方向，利用至少分成兩個吸附區域的多孔質 材來吸附固定前述半導體晶圓側，且剝離接著在單片化的 半導體晶圓的黏接性帶之剝離機構爲特徵。 進而，本發明的黏接性帶之剝離方法乃屬於剝離接著 在單片化的半導體晶圓的黏接性帶之剝離方法，其具備有 :針對黏接性帶的剝離方向，介著至少分成兩個吸附區域 的多孔質材，而在對應前述吸附區域的至少兩個系統的吸 引路徑來吸附固定前述半導體晶圓側的工程、和沿著剝離 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ---------1衣------、訂------^ (請先閱讀背面之注意事項再填寫本頁) -7- 569355 A 7 B7 五、發明説明（5) 方向剝離前述黏接性帶，且當對應鄰接的前述吸附區域的 黏接性帶的一部分被剝離時，在前述黏接性帶之剝離達到 鄰接的前述吸附區域的附近，切換吸引路徑來吸附固定前 述半導體晶圓的工程爲特徵。 更又，本發明的黏接性帶之剝離裝置乃屬於剝離接著 在單片化的半導體晶圓的黏接性帶之剝離裝置，其具備有 :針對黏接性帶的剝離方向而具備有由至少分成兩個吸附 區域的多孔質材製成的晶圓吸附部，且用來吸附固定接著 在黏接性帶的單片化的半導體晶圓的保持台、和欲拉開並 剝離前述黏接性帶的端部的剝離爪、和欲在對應前述晶圓 吸附部的各個吸附區域而設的第一吸引路徑來吸附前述半 導體晶圓的第一吸引裝置、和欲在對應前述晶圓吸附部的 各個吸附區域而設的第二吸引路徑來吸附前述半導體晶圓 的第二吸引裝置、和將利用前述第一吸引裝置的半導體晶 圓之吸附及利用前述第二吸引裝置的半導體晶圓之吸附切 換到每個吸引路徑的切換裝置；在藉由前述第一吸引裝置 在第一吸引路徑吸附前述半導體晶圓的狀態，利用前述剝 離爪拉開並剝離黏接性帶的端部，且當前述晶圓吸附部鄰 接的吸附區域近傍的黏接性帶的一部分被剝離時，利用前 述切換裝置來切換吸引路徑，在對應前述第二吸引裝置的 前述吸附區域的第二吸引路徑吸附前述半導體晶圓爲特徵 〇 本發明的半導體裝置之製造裝置乃具備有：針對黏接 性帶的剝離方向而具備有由至少分成兩個吸附區域的多孔 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------裝-- (請先閲讀背面之注意事項再填寫本頁) 、11 線 經濟部智慧財產笱員工消費合作社印製 -8- 經濟部智慧財凌局員工消費合作社印製 569355 A7 B7 五、發明説明（6) 質材製成的晶圓吸附部來吸附固定接著在黏接性帶的單片 化的半導體晶圓的保持台、和用來拉開並剝離前述黏接性 帶的端部的剝離爪、和欲在對應前述晶圓吸附部的各個吸 附區域而設的第一吸引路徑來吸附前述半導體晶圓的第一 吸引裝置、和欲在對應前述晶圓吸附部的各個吸附區域而 設的第二吸引路徑來吸附前述半導體晶圓的第二吸引裝置 、和將利用前述第一吸引裝置的半導體晶圓之吸附及利用 前述第二吸引裝置的半導體晶圓之吸附切換到每個吸引路 徑的切換裝置；藉由前述第一吸引裝置在第一吸引路徑以 吸附前述半導體晶圓的狀態，利用前述剝離爪拉開並剝離 黏接性帶的端部，當前述晶圓吸附部鄰接的吸附區域近傍 的黏接性帶的一部分被剝離時，藉由前述切換裝置切換吸 引路徑，在對應前述第二吸引裝置的前述吸附區域的第二 吸引路徑吸附前述半導體晶圓，剝離接著在單片化的半導 體晶圓的黏接性帶之剝離裝置爲特徵。 而本發明的黏接性帶之剝離方法乃屬於接著在單片化 的半導體晶圓的黏接性帶之剝離方法，其具備有：將接著 在黏接性帶的單片化的半導體晶圓載置，針對黏接性帶的 剝離方向具有由至少分成兩個吸附區域的多孔質材製成的 晶圓吸附部的保持台，且在對應各個吸附區域而設的第一 吸引路徑來吸引並吸附固定前述半導體晶圓的工程、和利 用剝離爪來拉開並剝離前述黏接性帶的端部的工程、和當 前述晶圓吸附部鄰接的吸附區域近傍的黏接性帶的一部分 被剝離時，在與前述第一吸引路徑相異的第二吸引路徑來 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) -9- 569355 A7 B7 五、發明説明（7) 吸附固定前述半導體晶圓的工程爲特徵。 本發明的半導體晶片之拾取裝置乃屬於具備有剝離接 著在單片化的半導體晶圓的黏接性帶的剝離機構，拾取各 個半導體晶片的拾取裝置，其具備有：針對黏接性帶的剝 離方向，而由至少分成兩個吸附區域的多孔質材所製成的 晶圓吸附部，被接著在黏接性帶用來吸附固定單片化的半 導體晶圓的保持台、和欲拉開並剝離前述黏接性帶的端部 的剝離爪、和在對應前述晶圓吸附部之各個吸附區域而設 的第一吸引路徑，用來吸附前述半導體晶圓的第一吸引裝 置、和在對應前述晶圓吸附部的各個吸附區域而設的第二 吸引路徑，用來吸附前述半導體晶圓的第二吸引裝置、和 將利用前述第一吸引裝置的半導體晶圓的吸附及利用前述 第二吸引裝置的半導體晶圓的吸附，切換到每個吸引路徑 的切換裝置、和吸附並拾取各個半導體晶片的吸附夾頭， 且利用前述第一吸引裝置在第一吸引路徑吸附前述半導體 晶圓的狀態，經由前述剝離爪拉開並剝離黏接性帶的端部 ，當前述晶圓吸附部鄰接的吸附區域近傍的黏接性帶的一 部分被剝離時，可經由前述切換裝置來切換吸引路徑，在 對應前述第二吸引裝置之前述吸附區域的第二吸引路徑吸 附前述半導體晶圓，且在前述黏接性帶剝離終止後，利用 前述吸附夾頭來吸附並拾取各個半導體晶片爲特徵。 進而本發明的半導體裝置之製造裝置乃具備有：具備 有由針對黏接性帶的剝離方向，至少分成兩個吸附區域的 多孔質材所製成的晶圓吸附部，被接著在黏接性帶來吸附 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------Μ衣-- (請先閱讀背面之注意事項再填寫本頁) 、1Τ 線 經濟部智慧財4^7¾工消費合作社印製 -10- 經濟部智慧財產笱員工消費合作社印^ 569355 A7 —______B7__ 五、發明説明（8) 固定單片化的半導體晶圓的保持台、和用來拉開並剝離前 述黏接性帶端部的剝離爪、和欲在對應前述晶圓吸附部的 各個吸附區域而設的第一吸引路徑吸附前述半導體晶圓的 第一吸引裝置、和欲在對應前述晶圓吸附部的各個吸附區 域而設的第二吸引路徑吸附前述半導體晶圓的第二吸引裝 置、和將經由前述第一吸引裝置的半導體晶圓的吸附及經 由前述第二吸引裝置的半導體晶圓的吸附，切換到每個吸 引路徑的切換裝置、和吸附並拾取各個半導體晶片的吸附 夾頭，且在經由前述第一吸引裝置在第一吸引路徑吸附前 述半導體晶圓的狀態，利用前述剝離爪拉開並剝離黏接性 帶的端部，且當前述晶圓吸附部鄰接的吸附區域近傍的黏 接性帶的一部分被剝離時，藉由前述切換裝置來切換吸引 路徑，在對應前述第二吸引裝置之前述吸附區域的第二吸 引路徑吸附前述半導體晶圓，且在前述黏接性帶剝離終止 後，利用前述吸附夾頭來吸附並拾取各個半導體晶片的半 導體晶片之拾取裝置爲特徵。 更且本發明的半導體晶片之拾取方法乃屬於剝離接著 在單片化的半導體晶圓的黏接性帶之後，拾取各個半導體 晶片之拾取方法中，其特徵爲具備有：將被接著在黏接性 帶之單片化的半導體晶圓，相對於黏接性帶的剝離方向， 而在對應由至少分成兩個吸附區域的多孔質材所製成的吸 附區域所設的第一吸引路徑進行吸引加以固定的工程、和 拉開並剝離前述黏接性帶端部的工程、和當前述鄰接之吸 附區域近傍的黏接性帶被剝離時，在對應前述吸附區域的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ---------^------1T------^ (請先閱讀背面之注意事項再填寫本頁) -11 - 經濟部智慧財產局員工消費合作社印製 569355 A7 B7 五、發明説明（9) 第二吸引路徑吸附前述半導體晶圓的工程、和在前述黏接 性帶剝離終止後，利用前述吸附夾頭來吸附並拾取各個半 導體晶片的工程。 本發明的半導體裝置之製造方法乃具備有·’在半導體 晶圓的表面形成元件的工程、和將元件形成結束的半導體 晶圓沿著切割線或晶片分割線加以分離形成單片化的半導 體晶圓的工程、和將接著在黏接性帶之單片化的半導體晶 圓，針對黏接性帶的剝離方向載置在具備由至少分成兩個 吸附區域的多孔質材製成的晶圓吸附部的保持台，且在對 應前述吸附區域而設的第一吸引路徑所吸引並吸附固定的 工程、和拉開並剝離前述黏接性帶的端部的工程、和當鄰 接的吸附區域近傍的黏接性帶的一部分被剝離時，切換對 應前述吸附區域的第二吸引路徑來吸附固定前述半導體晶 圓的工程、和前述黏接性帶剝離結束後，令保持台和吸附 夾頭相對移動，在屬於拾取對象的半導體晶片上，移動吸 附夾頭的工程、和利用前述吸附夾頭來吸附並拾取前述各 個半導體晶片的工程爲特徵。 因爲按照如上述的構成及方法就能將單片化的半導體 晶圓利用對應黏接性帶的剝離位置、半導體晶片之拾取狀 態的最適當吸引力而有效的吸附固定，所以就能減低因半 導體晶片的薄型化而特別造成問題的黏接性帶之剝離時、 拾取時的半導體晶片裂痕、屑片等不良，而製造高品質的 半導體裝置，同時也能抑制製造良品率降低。 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------批衣------1T------0 (請先閲讀背面之注意事項再填寫本頁) -12- 經濟部智慧財產局員工消費合作社印製 569355 A7 B7 五、發明説明（10 〔發明的實施形態〕 以下針對本發明的實施形態參照圖面做說明。 第1圖至第9圖分別是針對有關本發明的第一實施形 態的黏接性帶之剝離機構，黏接性帶之剝離裝置，黏接性 帶之剝離方法，半導體晶片之拾取裝置，半導體晶片之拾 取方法，半導體裝置之製造方法及半導體裝置之製造裝置 做說明，以晶片接合機爲例而示之。第1圖是表示晶片接 合機之槪略構成的立體圖，第2圖是針對剝離機構及拾取 機構所用的晶圓吸附部的構成做說明的圖，第3圖是針對 晶圓吸附部和被單片化的半導體晶圓配置做說明的圖，第 4圖是針對上述晶片接合機方面的黏接性帶的剝離機構做 說明圖，第5圖是針對輔助板的構成例做說明的圖，第6 圖及第7圖是分別針對上述晶片接合機方面的半導體晶片 之拾取機構做說明的圖，第8圖是針對所拾取的半導體晶 片的實裝工程做說明的槪略圖，第9圖是上述晶片接合機 方面的晶片接合工程的流程圖。 第1圖所示的晶片接合機是由：欲剝離黏接性帶的剝 離機構、拾取半導體晶片的拾取機構、將所拾取的半導體 晶片在引線框上移送的移送機構及搬送引線框的搬送機構 等所構成。上述剝離機構是由：保持台3、TV相機4、剝 離爪21、輔助板22及吸引裝置20等所構成。上述拾取 機構是由上述保持台3、上述TV相機4、吸附夾頭10及 上述吸引裝置20等所構成，在剝離機構和拾取機構共用 上述保持台3、上述TV相機4及上述吸引裝置20。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ' -13- 訂 I 务 (請先閱讀背面之注意事項再填寫本頁) 569355 A7 B7 五、發明説明（11) 上述保持台3是具備有由針對黏接性帶的剝離方向至 少分成兩個吸附區域的（空間分隔）多孔質材例如薄膜狀的 陶瓷材/玻璃聚酯基盤製成的晶圓吸附部2。本實施形態 乃如第2圖（a)、（b)所示，晶圓吸附部2具備有七個吸附 區域2-1〜2-7。在各個吸附區域2-1〜2-7的下部設置欲 連接真空配管的連接孔23-1〜23-7。在該晶圓吸附部2將 元件形成結束且被單片化的半導體晶片1，吸附並固定於 貼合在黏接性帶24的半導體晶圓的晶圓側。此時，如第 3圖（a)、（b)所示，針對剝離方向，各半導體晶片1的邊 爲正交地加以配置的話，拾取之際的各半導體晶片1的位 置辨識變得很容易。如第3圖（a)、（c)所示，針對剝離方 向，各半導體晶片1的對角線配置在平行的方向（半導體 晶片爲正方形時，保持45度傾斜）的話，黏接性帶24的 剝離從半導體晶片1的角隅部開始的緣故，能夠很容易剝 離。選擇那種配置只要考慮半導體晶片1的尺寸、厚度、 黏接性帶24的黏接力等而決定就可。 上述保持台3是藉由令半導體晶圓在XY方向移動， 令各個半導體晶片1移動到吸引裝置20上。上述TV相 機4是用於監視上述半導體晶片1的表面。上述吸引裝置 20是設置在上述保持台3的下側，具有··對應晶圓吸附 部2的各個吸附區域2-1〜2-7所設的至少兩系統的真空（ 吸弓丨）配管和對應各個的兩個真空（吸引）幫浦、切換上述 真空配管的切換閥、控制該切換閥的控制裝置等。 而將上述半導體晶片1移送到引線框上的移送機構是 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 批衣-- (請先閱讀背面之注意事項再填寫本頁) 、11 線 經濟部智慈財4局員工消費合作社印製 14- 569355 A7 B7 五、發明説明（θ 由接合工具8、吸附夾頭10、位置修正台11及接合頭12 等所構成。上述吸附夾頭1 0也用上述拾取時，吸附從黏 接性帶24被剝離的半導體晶片1並移送到上述位置修正 台1 1上。在該位置修正台1 1上修正半導體晶片1的位置 。位置被修正的半導體晶片1則藉由接合頭1 2被移送到 引線框上。 進而，搬送引線框的搬送機構是由引線框供給部5、 引線框搬送裝置6、銲膏供給裝置7及引線框收納部9等 所構成。在上述引線框供給部5收容晶片接合前的引線框 ，將引線框依序送出到引線框搬送裝置6。上述銲膏供給 裝置7是在被引線框搬送裝置6搬送的引線框的頭部塗佈 導電性銲膏。而上述引線框收納部9是收容結束晶片接合 的引線框。 如上述構成的晶片接合機的全體槪略動作乃如下所述 。先將結束元件形成的晶圓予以單片化而形成複數個半導 體晶片1，且將該些半導體晶片1接著（轉印）在黏接性帶 24，安裝在上述保持台3。或在結束元件形成的晶圓從元 件形成面側沿著切割線（或晶片分割線）形成切溝，且在該 元件形成面側在貼合黏接性帶24之後，將晶圓背面抛光 到上述切溝爲止，藉此予以單片化（先定時）形成複數個半 導體晶片1，安裝在上述保持台3。其次，利用吸引裝置 20直接吸附固定半導體晶片1，且利用剝離爪21和輔助 板22來剝離上述黏接性帶。接著，使保持台3在χγ方 向移動，使用TV相機14來監視半導體晶片1的表面， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 線 經濟部智您財產局肖工消費合作社印^ -15- 569355 A7 B7 五、發明説明（1含 將利用該監視器所獲的影像資料加以二値化或多値化，並 進行半導體晶片1之位置檢查及欲判別良品/不良品的標 記檢查等。然後藉由上述吸引裝置20做真空吸引（根據半 導體晶片的尺寸、厚度，不一定需要真空吸引），且利用 吸附夾具1 0來吸附並拾取半導體晶片1，並移送到上述 位置修正台11上，且對應半導體晶片1的位置、需要來 修正正背面後，藉由接合頭1 2移送到引線框上。 上述拾取結束後，接著往所拾取的半導體晶片1的位 置移動保持台3，且重複上述動作。 一方面，上述引線框供給部5是將引線框依序送出到 引線框搬送裝置6，且在被引線框搬送裝置6搬送的引線 框的頭部，從上述銲膏供給裝置7塗佈導電性銲膏。然後 ，利用上述接合頭1 2所移送的半導體晶片1就會被裝配（ 晶片接合）在上述引線框的頭部上。晶片接合結束的引線 框會被收容在引線框收納部9，依序重複此種動作。 其次，針對如上述的晶片接合機方面的黏接性帶之剝 離機構和半導體晶片之拾取機構以及使用該些的剝離方法 及拾取方法根據第4圖至第9圖做詳細說明。 首先，準備一在半導體元件形成面貼合黏接性帶24 之被單片化的半導體晶圓（半導體晶片1)(步驟1)，設定在 保持台3(步驟2)。在保持台3如第4圖所示，設有兩系 統的真空配管25-1、25-2、配管的切換閥26-1〜26-7及兩 個真空幫浦27-1、27-2，使用該些來施行黏接性帶24的 剝離。先使用第一系統的真空配管25-1和第一真空幫浦 本纸張尺度適用中國國家標準（CNS ) A4規格（2丨0X29*7公釐） ---------批衣-- (請先閱讀背面之注意事項再填寫本頁)569355 A7 B7 Issued by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (1) [Technical Field to which the Invention belongs] The present invention relates to the manufacturing technology of semiconductor devices, and in particular, to semiconductor wafers that are stripped and then singulated Peeling mechanism and method for peeling an adhesive tape, peeling device and peeling method for peeling and adhering an adhesive tape to a singulated semiconductor wafer, and having adhesiveness for peeling and then singulating a semiconductor wafer The stripping mechanism of the belt, a pickup device and a pickup method for picking up individual semiconductor wafers, a manufacturing device for a semiconductor device including the peeling mechanism, a peeling device, or a pickup device, and a method for manufacturing a semiconductor device. [Conventional Technology] Generally, in the manufacturing process of a semiconductor device, a semiconductor wafer having completed element formation is divided along a dicing line or a wafer dividing line, and a plurality of semiconductor wafers are formed by singulation. Figures 53 (a) and (b) show the state of the singulated semiconductor wafer (semiconductor wafer) 100, and are attached to the adhesive tape 101a. (A) is a perspective view, and (b) is a sectional view taken along line AA. Each semiconductor wafer 100 is picked up from the above-mentioned adhesive tape 101a, and a semiconductor device is completed through an assembling process such as a lead frame and a TAB tape, or a sealing process for a package. When picking up each of the semiconductor wafers 100, the back of the adhesive surface of the adhesive tape 10la of the semiconductor wafer is adhered to the other adhesive tape 10lb that is adhered to the wafer ring, and then the above is peeled off. The adhesive tape 101 a is equipped with a wafer ring in a pick-up device to pick up each semiconductor wafer 100. Fig. 54 is an enlarged cross-sectional view of a main component of a semiconductor wafer 100 in a conventional pick-up device picked up by an adhesive tape 101b. Order the semiconductor crystal in batch (please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) -4-569355 Ministry of Economic Affairs 4 (A7 B7 printed by the Industrial and Commercial Cooperative) 5. Description of the invention (2) When the sheet 100 is peeled from the adhesive tape 101b attached to the wafer ring and picked up, an adhesive tape 10lb is interposed from the back side of the semiconductor wafer 100 The protruding pins (pins) 102 are protruded (raised), and the semiconductor wafer 100 is peeled off by the elastic force of the adhesive tape 101b. The protruding pins 102 are arranged near the corners or the center of the semiconductor wafer 100. Position, the base is mounted on the pin holder 103. In the order of peeling the semiconductor wafer 100 from the adhesive tape 101b, the semiconductor wafer 100 to be picked up is first moved on the protruding pin 102 and the adhesive tape on which the semiconductor wafer 100 is adhered is fixed. 101b holding table. Secondly, in order to discriminate the position of the peeled semiconductor wafer 100 and to perform a mark inspection such as a good product or a defective product, the inside of the backup jig 104 is vacuum-sucked, and the adhesive tape is pulled. 101b is sucked and fixed on the upper surface of the backup jig 104. In this state, the pin jig 10 for mounting the protruding pin 102 is raised to make the protruding pin 102 protrude from the upper surface of the backup jig 104, and an adhesive tape 10 lb is interposed. The semiconductor wafer 100 is protruded from the back side. However, in recent years, it is desired to mount the semiconductor wafer in a thin card-shaped package. Therefore, it is strongly desired to reduce the thickness of the semiconductor wafer. The semiconductor wafer is honed, polished, and etched to a thin thickness. 100 μm or less. However, if the semiconductor wafer is thinned to 100 μm or less, it is adhered to another adhesive tape 1 0 1 b which is attached to the wafer ring, and then the adhesive tape 1 is peeled off. a, the semiconductor wafer will crack, so-called cracks will occur, which will reduce the manufacturing yield, or the semiconductor wafers 100 will contact each other to generate chips, which is the problem of so-called semiconductor device quality degradation. When picking up each semiconductor wafer, Cracks and chips will also be produced. This paper size applies to China National Standard (CNS) A4 (210X297mm) gutter (please read the precautions on the back before filling this page) -5- 569 355 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of the Invention (3) Secondly, in view of the above-mentioned cracks when the thickness of the semiconductor wafer is 100 μm or less, FIG. 55 (a), (b) (A), (b) of Figure 56 will be described in detail. If the thickness of the semiconductor wafer is very thin as described above, even the outer peripheral portion (particularly the corner portion) of the semiconductor wafer 100 will be peeled off. The speed of peeling the adhesive tape 100 from the rising of the protruding pin 102 is very slow. As shown in FIG. 55 (a), the semiconductor wafer 100 is concavely curved before peeling, as shown in FIG. 55 (b). Display until the last crack. Then, as shown in FIGS. 56 (a) and (b), when the adhesive tape 101 is interposed, the back side of the semiconductor wafer 100 and the protruding pin 102 are pushed up, and the corner portion is not peeled off. In the state, the crack will penetrate into the contact portion between the semiconductor wafer 100 and the protruding pin 102, or the protruding pin 102 will penetrate until the wafer is cracked. If the thickness of the semiconductor wafer is 100% m or more, the strength (thickness direction) of the semiconductor wafer from the adhesion of the semiconductor wafer 100 and the adhesive tape 101 will hardly occur. As described above, if the thickness of the semiconductor wafer is reduced, the flexural strength of the semiconductor wafer is lowered. In the conventional peeling mechanism and method of the adhesive tape, and in the conventional pick-up device and pick-up method of the semiconductor wafer, cracks and debris cannot be avoided. As the quality and yield of tablets and the like decline, not only these mechanisms, devices, and methods, but also manufacturing devices and manufacturing methods of semiconductor devices including these devices are also expected to be improved. [Problems to be Solved by the Invention] As described above, the conventional peeling mechanism and method of the adhesive tape, and the conventional semiconductor wafer pick-up device and pick-up method are based on the Chinese paper standard in accordance with the standard of semi-paper ( CNS) A4 specification (210X297 mm) " — -6- (Please read the precautions on the back before filling out this page). Packing-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by employee consumer cooperatives 569355 A7 B7 V. Invention Explanation (4) The thinning of the conductor wafer causes cracks and chips on the semiconductor wafer when the adhesive tape is peeled off or picked up, which damages the semiconductor wafer, and has the problems of reducing the quality of semiconductor devices and reducing the yield. The present invention is an invention in view of the above-mentioned matters, and an object thereof is to provide a peeling mechanism for manufacturing a high-quality semiconductor device while reducing defects such as wafer cracks and chips, and also suppressing the production of an adhesive tape with a reduced yield. , Peeling device for adhesive tape, peeling method for adhesive tape, picking device for semiconductor wafer, picking method for semiconductor wafer, manufacturing method for semiconductor device, and manufacturing device for semiconductor device. [Means for Solving the Problems] The peeling mechanism of the adhesive tape of the present invention is a peeling mechanism of an adhesive tape that is peeled off and then singulated into a semiconductor wafer, and is characterized by having: In the peeling direction, a porous material divided into two adsorption regions is used to adsorb and fix the adsorption portion on the semiconductor wafer side. The manufacturing device of the semiconductor device of the present invention includes: for the peeling direction of the adhesive tape, a porous material divided into at least two adsorption regions is used to adsorb and fix the semiconductor wafer side; The peeling mechanism of the adhesive tape of a semiconductor wafer is characterized. Furthermore, the peeling method of the adhesive tape of the present invention belongs to a peeling method of peeling an adhesive tape followed by singulation of a semiconductor wafer. The peeling method includes the following steps: Porous material with two adsorption areas, the process of adsorbing and fixing the semiconductor wafer side by the suction path of at least two systems corresponding to the adsorption areas, and applying China National Standard (CNS) A4 specifications along the paper stripping scale (210X 297 mm) --------- 1 clothing ------, order ------ ^ (Please read the precautions on the back before filling this page) -7- 569355 A 7 B7 5. Description of the invention (5) The adhesive tape is peeled in the direction, and when a part of the adhesive tape corresponding to the adjacent adsorption area is peeled off, the peeling of the adhesive tape reaches the adjacent adsorption area. The process of switching the suction path to attract and fix the aforementioned semiconductor wafer is characterized in the vicinity of. Furthermore, the peeling device for an adhesive tape of the present invention is a peeling device for peeling an adhesive tape followed by singulation of a semiconductor wafer. The peeling device is provided with a reason for the peeling direction of the adhesive tape. A wafer adsorption portion made of a porous material divided into at least two adsorption regions, and used to adsorb and fix a holding stage of a singulated semiconductor wafer adhering to an adhesive tape, and to peel and peel the aforementioned adhesion. A peeling claw at the end of the tape, a first suction device to suck the semiconductor wafer in a first suction path provided for each of the suction regions corresponding to the wafer suction section, and a wafer suction section corresponding to the wafer suction section A second suction path for each of the suction regions, a second suction device that sucks the semiconductor wafer, a semiconductor wafer that uses the first suction device, and a semiconductor wafer that uses the second suction device. Switching device for each suction path; in a state where the semiconductor wafer is adsorbed on the first suction path by the first suction device, the peeling claw is used to pull and peel the semiconductor wafer. When the end of the adhesive tape is peeled off and a part of the adhesive tape near the adsorption area adjacent to the wafer adsorption section is peeled off, the suction path is switched by the switching device, and the suction corresponding to the suction of the second suction device is switched. It is characterized in that the second suction path of the region adsorbs the aforementioned semiconductor wafer. The semiconductor device manufacturing apparatus of the present invention is provided with a porous paper sheet having at least two adsorption regions divided into at least two adsorption regions for the peeling direction of the adhesive tape. China National Standard (CNS) A4 specification (210X297 mm) --------- install-(Please read the precautions on the back before filling out this page), 11 Intellectual Property of the Ministry of Economic Affairs 笱 Printed by Employee Consumer Cooperatives -8- Printed by the Consumer Finance Cooperative of the Smart Finance Bureau of the Ministry of Economic Affairs 569355 A7 B7 V. Description of the invention (6) Wafer adsorption section made of material to adsorb and fix the singulated semiconductor crystal adhered to the adhesive tape A round holding table, a peeling claw for pulling and peeling off the end of the adhesive tape, and a first suction path to be provided in each suction region corresponding to the wafer suction section. The first suction device is provided with the semiconductor wafer, and the second suction device is used to suction the semiconductor wafer in the second suction path provided corresponding to each suction region of the wafer suction section, and the first suction is used. Device for sucking semiconductor wafers and switching to each suction path using the above-mentioned second suction device for semiconductor wafer suction; a state where the first suction device is on the first suction path to suck the semiconductor wafer When the end of the adhesive tape is pulled apart and peeled by the peeling claw, when a part of the adhesive tape near the adsorption area adjacent to the wafer adsorption portion is peeled off, the suction path is switched by the switching device, and the corresponding The second suction path of the second suction device of the second suction device sucks the semiconductor wafer and peels off the adhesive tape of the semiconductor wafer and then peels the device. The peeling method of the adhesive tape of the present invention belongs to a peeling method of an adhesive tape followed by a singulated semiconductor wafer. The peeling method includes: mounting a singulated semiconductor wafer followed by an adhesive tape; The holding stage has a wafer suction section made of a porous material that is divided into at least two suction regions for the peeling direction of the adhesive tape, and attracts and sucks in a first suction path corresponding to each suction region. The process of fixing the semiconductor wafer, the process of pulling and peeling off the end of the adhesive tape with a peeling claw, and when a part of the adhesive tape near the adsorption area adjacent to the wafer adsorption portion is peeled off. In the second attraction path which is different from the aforementioned first attraction path, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) gutter (please read the precautions on the back before filling this page)- 9- 569355 A7 B7 V. Description of the invention (7) The process of adsorbing and fixing the aforementioned semiconductor wafer is characterized. The pick-up device for a semiconductor wafer of the present invention belongs to a pick-up device provided with an adhesive tape that peels off and then singulates a semiconductor wafer. The pick-up device picks up each semiconductor wafer and includes: Direction, and the wafer adsorption portion made of a porous material divided into at least two adsorption regions is then held on an adhesive tape holding table for holding and fixing a singulated semiconductor wafer, and A peeling claw for peeling off the end of the adhesive tape, a first suction path provided in each suction region corresponding to the wafer suction section, a first suction device for suctioning the semiconductor wafer, and The second suction path provided in each suction region of the wafer suction section is used for the second suction device for suctioning the semiconductor wafer, and for the semiconductor wafer to be used by the first suction device and the second suction device is used. The semiconductor wafer adsorption, a switching device that switches to each suction path, and an adsorption chuck that adsorbs and picks up each semiconductor wafer, and uses the aforementioned first A suction device sucks the semiconductor wafer in a first suction path, pulls and peels off the end of the adhesive tape through the peeling claw, and a part of the adhesive tape near the suction region adjacent to the wafer suction section. When peeled, the suction path can be switched through the switching device, the semiconductor wafer is sucked in the second suction path corresponding to the suction area of the second suction device, and after the peeling of the adhesive tape is terminated, the suction is used. It features a chuck to suck and pick up individual semiconductor wafers. Furthermore, the manufacturing apparatus of the semiconductor device of the present invention includes a wafer adsorption portion made of a porous material that is divided into at least two adsorption regions with respect to the peeling direction of the adhesive tape, and is adhered to the adhesiveness. Bring the size of this paper to apply Chinese National Standard (CNS) A4 specifications (210X297 mm) --------- M clothing-(Please read the precautions on the back before filling this page), 1T line economy Printed by the Ministry of Intellectual Property 4 ^ 7¾Printed by Industrial and Consumer Cooperatives-10- Printed by Intellectual Property of the Ministry of Economic Affairs and printed by Employee Consumer Cooperatives ^ 569355 A7 —______ B7__ V. Description of the Invention (8) Holder for fixed monolithic semiconductor wafers A peeling claw that pulls and peels off the end of the adhesive tape, a first suction device that sucks the semiconductor wafer in a first suction path provided for each suction region corresponding to the wafer suction part, and a corresponding A second suction device provided for each of the suction regions of the wafer suction section to suction the semiconductor wafer; and a second suction device for suctioning the semiconductor wafer through the first suction device; The semiconductor wafer suction by the suction device, the switching device that switches to each suction path, and the suction chuck that suctions and picks up each semiconductor wafer, and the semiconductor wafer is suctioned by the first suction path through the first suction device. In a state, the end of the adhesive tape is pulled apart and peeled by the peeling claw, and when a part of the adhesive tape near the adsorption region adjacent to the wafer adsorption portion is peeled off, the suction path is switched by the switching device. Adsorbing the semiconductor wafer in a second suction path corresponding to the adsorption area of the second suction device, and after the peeling of the adhesive tape is terminated, the semiconductor wafer is sucked and picked up by using the suction chuck. A picking device is featured. In addition, the method for picking up a semiconductor wafer of the present invention belongs to a method for picking up individual semiconductor wafers after peeling and adhering the adhesive tape of a singulated semiconductor wafer, which is characterized by having: With respect to the detached semiconductor wafer of the adhesive tape, with respect to the peeling direction of the adhesive tape, the first suction path provided in the adsorption region made of a porous material divided into at least two adsorption regions is attracted. The fixing process, the process of pulling and peeling off the end of the adhesive tape, and when the adhesive tape near the adjacent adsorption area is peeled off, the Chinese national standard applies to the paper size corresponding to the adsorption area. (CNS) A4 specification (210X 297 mm) --------- ^ ------ 1T ------ ^ (Please read the precautions on the back before filling this page) -11 -Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 569355 A7 B7 V. Description of the invention (9) The second suction path is used to adsorb the semiconductor wafer, and after the peeling of the adhesive tape is terminated, the adsorption chuck is used to Pick up and pick up each Engineering conductor wafer. A method for manufacturing a semiconductor device according to the present invention includes: a process of forming a component on a surface of a semiconductor wafer; and separating the semiconductor wafer after the formation of the component along a cutting line or a wafer dividing line to form a singulated semiconductor crystal. A round process, and a semiconductor wafer to be singulated in an adhesive tape is placed on a wafer having a porous material made of at least two adsorption regions for the peeling direction of the adhesive tape. The holding stage of the part, and the process of being attracted and fixed by the first suction path provided corresponding to the adsorption area, the process of pulling and peeling off the end of the adhesive tape, and the process of being adjacent to the adjacent adsorption area When a part of the adhesive tape is peeled off, the second suction path corresponding to the suction region is switched to suck and fix the semiconductor wafer, and after the peeling of the adhesive tape is finished, the holding table and the suction chuck are relatively moved. The process of moving the suction chuck on the semiconductor wafer belonging to the pickup object, and using the suction chuck to suck and pick up the semiconductor crystals. The project is characterized. According to the above-mentioned structure and method, the singulated semiconductor wafer can be effectively fixed by using the most appropriate attraction force corresponding to the peeling position of the adhesive tape and the pickup state of the semiconductor wafer, thereby reducing the semiconductor The thinning of the wafer causes defects such as peeling of the adhesive tape, picking up of the semiconductor wafer, and chipping during pick-up, and it is possible to manufacture high-quality semiconductor devices while suppressing reduction in manufacturing yield. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) --------- Approved clothing ------ 1T ------ 0 (Please read the note on the back first Please fill in this page again for details) -12- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 569355 A7 B7 V. Description of the invention (10 [Embodiments of the invention] The following describes the embodiments of the present invention with reference to the drawings. Figure 1 Fig. 9 to Fig. 9 respectively show the peeling mechanism of the adhesive tape according to the first embodiment of the present invention, the peeling device of the adhesive tape, the peeling method of the adhesive tape, the semiconductor wafer pick-up device, and the semiconductor wafer pick-up. Method, manufacturing method of semiconductor device and manufacturing device of semiconductor device will be described, and a wafer bonding machine is taken as an example. The first figure is a perspective view showing a schematic configuration of the wafer bonding machine, and the second figure is for a peeling mechanism and a pickup. Figure 3 illustrates the structure of the wafer suction unit used in the mechanism. Figure 3 is a diagram explaining the arrangement of the wafer suction unit and the singulated semiconductor wafer. Figure 4 is a diagram illustrating the adhesion of the wafer bonding machine. Stripping machine for adhesive tape The construction diagram is shown in FIG. 5. FIG. 5 is a diagram illustrating a configuration example of an auxiliary board. FIG. 6 and FIG. 7 are diagrams illustrating a semiconductor wafer pick-up mechanism in the wafer bonding machine. A schematic diagram for explaining the mounting process of the picked-up semiconductor wafer. FIG. 9 is a flowchart of the wafer bonding process of the above-mentioned wafer bonding machine. The wafer bonding machine shown in FIG. The stripping mechanism includes a stripping mechanism, a pickup mechanism that picks up a semiconductor wafer, a transfer mechanism that transfers the picked-up semiconductor wafer on a lead frame, a transfer mechanism that transfers the lead frame, and the like. The stripping mechanism is composed of a holding table 3 and a TV camera 4 , The peeling claw 21, the auxiliary plate 22, the suction device 20, etc. The pickup mechanism is composed of the holding table 3, the TV camera 4, the suction chuck 10, the suction device 20, and the like. The above-mentioned holding table 3, the above-mentioned TV camera 4 and the above-mentioned suction device 20 are shared. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) '-13- Order I service (please (Please read the notes on the back before filling in this page) 569355 A7 B7 V. Description of the invention (11) The holding table 3 is provided with a (space-separated) porous material that is divided into at least two adsorption areas by the peeling direction of the adhesive tape. The wafer adsorption portion 2 is made of a thin film ceramic material / glass polyester substrate. In this embodiment, as shown in FIGS. 2 (a) and (b), the wafer adsorption portion 2 includes seven adsorption regions. 2-1 to 2-7. Attachment holes 23-1 to 23-7 to be connected to the vacuum piping are provided in the lower portions of the respective adsorption regions 2-1 to 2-7. In the wafer adsorption portion 2, the element formation is completed and the The singulated semiconductor wafer 1 is sucked and fixed to the wafer side of the semiconductor wafer bonded to the adhesive tape 24. At this time, as shown in FIGS. 3 (a) and (b), if the sides of the semiconductor wafers 1 are arranged orthogonally with respect to the peeling direction, the position identification of each semiconductor wafer 1 at the time of picking up becomes easy. . As shown in FIGS. 3 (a) and 3 (c), with respect to the peeling direction, the diagonals of the respective semiconductor wafers 1 are arranged in parallel directions (when the semiconductor wafer is square, maintaining a 45-degree tilt), the adhesive tape 24 The peeling can be easily carried out from the corner of the semiconductor wafer 1. The choice of the arrangement may be determined by taking into consideration the size and thickness of the semiconductor wafer 1, the adhesive force of the adhesive tape 24, and the like. The holding stage 3 moves each semiconductor wafer 1 to the suction device 20 by moving the semiconductor wafer in the XY direction. The TV camera 4 monitors the surface of the semiconductor wafer 1. The suction device 20 is provided on the lower side of the holding table 3, and has a vacuum (suction bow) piping and at least two systems provided for each of the suction regions 2-1 to 2-7 of the wafer suction section 2. Corresponding to each of the two vacuum (suction) pumps, a switching valve that switches the vacuum piping, a control device that controls the switching valve, and the like. The transfer mechanism for transferring the above-mentioned semiconductor wafer 1 to the lead frame is the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). Approval-(Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the 4th Bureau of the Ministry of Economic Affairs, Zhicicai, Bureau 14- 569355 A7 B7 V. Description of the invention (θ consists of a bonding tool 8, a suction chuck 10, a position correction table 11 and a bonding head 12 etc. When the chuck 10 is also picked up as described above, the semiconductor wafer 1 that has been peeled off from the adhesive tape 24 is sucked and transferred to the position correction table 11. The position of the semiconductor wafer 1 is corrected on the position correction table 11. The corrected semiconductor wafer 1 is transferred to the lead frame by the bonding heads 12. Further, the lead frame transfer mechanism is a lead frame supply unit 5, a lead frame transfer device 6, a solder paste supply device 7, and a lead frame. It is composed of a storage section 9 and the like. The lead frame supply section 5 stores the lead frame before wafer bonding, and sequentially sends the lead frame to the lead frame transfer device 6. The solder paste supply device 7 is a lead frame transfer device 6 The head of the lead frame to be sent is coated with a conductive solder paste. The lead frame accommodating portion 9 is a lead frame for accommodating wafer bonding. The overall outline of the operation of the wafer bonding machine configured as described above is as follows. The wafer formed by the element is singulated to form a plurality of semiconductor wafers 1, and the semiconductor wafers 1 are then (transferred) to an adhesive tape 24 and mounted on the holding table 3. A circular groove is formed along the dicing line (or wafer dividing line) from the element formation surface side, and after the adhesive tape 24 is adhered on the element formation surface side, the back surface of the wafer is polished to the above-mentioned groove. A plurality of semiconductor wafers 1 are formed by singulation (first timing), and are mounted on the holding table 3. Next, the semiconductor wafer 1 is directly adsorbed and fixed by the suction device 20, and the adhesiveness is peeled off by the peeling claw 21 and the auxiliary plate 22. Next, the holding stage 3 is moved in the χγ direction, and the surface of the semiconductor wafer 1 is monitored using a TV camera 14. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) --- ------ Equipment-- (Please read the notes on the back before filling out this page) Printed by Xiao Gong Consumer Cooperative, Smart Assets Bureau, Ministry of Economic Affairs ^ -15- 569355 A7 B7 V. Description of the invention (1 with general Use the image data obtained by this monitor to binarize or multiply, and perform the position inspection of the semiconductor wafer 1 and the mark inspection to judge the good / defective products. Then, the above-mentioned suction device 20 is used for vacuum suction (according to The size and thickness of the semiconductor wafer do not necessarily require vacuum suction), and the semiconductor wafer 1 is sucked and picked up by the suction jig 10, and transferred to the above-mentioned position correction table 11, and corresponding to the position of the semiconductor wafer 1, the correction is required. After the back surface, it is transferred to the lead frame by the bonding head 12. After the above-mentioned pickup is completed, the holding stage 3 is then moved to the position of the picked-up semiconductor wafer 1, and the above-mentioned operation is repeated. On the one hand, the lead frame supply unit 5 sequentially sends the lead frame to the lead frame transfer device 6, and applies conductivity to the head of the lead frame transferred by the lead frame transfer device 6 from the solder paste supply device 7. Solder paste. Then, the semiconductor wafer 1 transferred by the bonding head 12 is mounted (wafer bonded) on the head of the lead frame. The lead frame after the wafer bonding is stored in the lead frame storage portion 9, and such operations are sequentially repeated. Next, the peeling mechanism of the adhesive tape and the pick-up mechanism of the semiconductor wafer, as well as the peeling method and the pick-up method using the above-mentioned wafer bonding machine will be described in detail with reference to FIGS. 4 to 9. First, a singulated semiconductor wafer (semiconductor wafer 1) having an adhesive tape 24 bonded to a semiconductor element formation surface is prepared (step 1) and set on a holding table 3 (step 2). As shown in Fig. 4, the holding table 3 is provided with two systems of vacuum pipes 25-1, 25-2, piping switching valves 26-1 to 26-7, and two vacuum pumps 27-1, 27-2. These are used to perform peeling of the adhesive tape 24. First use the vacuum pipe 25-1 of the first system and the first vacuum pump. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X29 * 7 mm) --------- Approved -(Please read the notes on the back before filling this page)

、1T 線 經濟部智慈財產局g(工消費合作社印製 -16- 經濟部智慈財凌局員工消費合作社印製 569355 A7 B7_ 五、發明説明（〇 27-1來真空吸引並吸附固定接著在黏接性帶24的半導體 晶圓（步驟3)，在此狀態開始黏接性帶24的剝離。於剝離 之際，用剝離爪21保持黏接性帶24的一端側，在黏接性 帶24的上部設定輔助剝離的輔助板22，利用該輔助板22 壓制在黏接性帶24的上面一邊彎曲黏接性帶24 —邊用剝 離爪21將黏接性帶24的一端於圖示箭頭方向以0.1 mm〜 50mm/sec的速度，更好是以0.1mm〜10mm/sec的速度拉 開（步驟4)。此時，剝離爪21具有可拉開強度的強弱即可 ’使剝離爪21和輔助板22以一定的速度移動加以剝離亦 可。而利用剝離爪21拉開一定距離後，重複用輔助板22 壓制黏接性帶24之上面的動作亦可。然後，晶圓吸附部 2所鄰接的吸附區域2-1〜2-7近傍的黏接性帶24的一部 分被剝離時，使用利用切換閥26-1〜26-7切換到第二系 統的真空配管25-2的第二真空.幫浦27-2來吸附並固定被 剝離的吸附區域的半導體晶片1 (步驟5)。第4圖是表示 剝離前進到吸附區域2-1和吸附區域2-2邊界區域，切換 閥26-1被切換的狀態。 以下同樣地，隨著黏接性帶24的剝離，依序切換切 換閥26-2〜26-7而施行。然後黏接性帶24爲完全被剝離 的狀態下，各半導體晶片1就會從黏接性帶24被轉印到 晶圓吸附部21，藉由第二真空幫浦27-2介著第二系統的 真空配管25-2吸附並固定各半導體晶片（步驟6)。 再者，上述輔助板22，乃如第5圖（a)所示，在前端 具有圓角，或如第5圖（b)所示，在前端使用銳角亦可。 本紙張尺度適用中國國家標準（CNS)A4規格（210X297公釐） ' -17- 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慈財產局a(工消費合作社印¾ 569355 A7 B7 五、發明説明（ 前端部的形狀可根據黏接性帶24的厚度、黏接力、柔軟 性等所決定。 其次，進行半導體晶片1的位置檢查及良品檢查後（ 步驟7)，開始從上述晶圓吸附部2拾取各個半導體晶片1 。拾取開始之後，各半導體晶片1即藉由第二真空幫浦 27-2被吸附並固定在第二系統的真空配管25-2，在該狀 態使用吸附夾頭10，並只用吸附力進行拾取（步驟8)。然 後，進行拾取，並在前進到吸附區域邊界近傍的時候，切 換切換閥且切換到第一系統的真空配管25-1，利用第一 真空幫浦27-1來吸引被拾取的吸附區域（步驟9-1)。第6 圖是表示拾取到吸附區域2-1大致結束，且對應吸附區域 2-1的切換閥26-1爲關閉的狀態。 藉此拾取半導體晶片1並露出晶圓吸附部2的一部分 ，藉此防止第二真空幫浦27-2的吸引力下降，同時還可 吸附並固定殘留在被露出的晶圓吸附部2的不良晶片、未 成爲製品的晶圓的周邊部的元件。 再者，進行拾取並在拾取吸附區域內的半導體晶片的 時候，如第7圖所示，關閉切換閥並停止吸附亦可（步驟 9-2)。第7圖是表示拾取前進到吸附區域2-4，且對應吸 附區域2-1〜2-3的切換閥26-1〜26-3爲關閉的狀態。 然後如第8圖所示，在引線框進行晶片接合（步驟1〇) 。於第8圖中分別槪略表示，（a)圖是黏接性帶24的剝離 工程，（b)圖是拾取工程，（c)圖是將半導體晶片1向著引 線框1 3利用導電性銲膏1 4等加以裝配的工程。 ________ 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I 批衣 訂 緣 (請先閱讀背面之注意事項再填寫本頁) -18- 569355 A7 B7 五、發明説明（1$ 而且丟棄不良品及晶圓外周部之未成爲製品的元件（ 步驟11)。 (請先閱讀背面之注意事項再填寫本頁) 按照如上述的構成及方法，因於可將單片化的半導體 晶圓對應黏接性帶的剝離位置、半導體晶片的拾取狀態的 最適當的吸引力而有效地吸附固定，所以能防止因半導體 晶片薄型化而造成問題的半導體晶片於黏接性帶剝離時或 拾取時產生裂痕、屑片。而且因爲只用吸附進行拾取，所 以也能防止在利用習知突起銷的拾取而造成問題之對突起 銷接觸部的半導體晶片的損傷。 習知技術中，半導體晶片的厚度爲50μιη以下的話， 於半導體晶片拾取時會發生許多裂痕（lOOpcs/ lOOpcs)， 但藉由應用本發明的實施形態，即使半導體晶片的厚度爲 50μιη以下，也能無視裂痕的產生而減低到（0/ lOOpcs)。 經濟部智慧財凌局Μ工消費合作社印製 再者，上述第一實施形態是以晶片接合機爲例做說明 ，但如第10圖（a)、（b)、（c)所示，剝離黏接性帶24後， 拾取各個半導體晶片1並裝入托盤1 5的揀選機，如第11 圖（a)、（b)、（c)所示，剝離黏接性帶24後，拾取各個半 導體晶片1並以倒裝片連接在實裝基板1 6上的倒裝片接 合機，如第12圖（a)、（b)、（c)所示，剝離黏接性帶24後 ，拾取各個半導體晶片1並裝配在熱可塑性的薄膜基板 17上的薄膜接著接合機，如第13圖（a)、（b)、（c)所示， 剝離黏接性帶24後，拾取各個半導體晶片1，並使用加 熱工具19a、19b裝配到TAB膠帶18的內引線接合機等 ，當然也適用於黏接性帶之剝離機構、半導體晶片之拾取 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ~ -19 - 569355 A7 B7 五、發明説明（1》 裝置所需要的另一半導體製造裝置。 (請先閱讀背面之注意事項再填寫本頁) 而上述黏接性帶24t也可用於剝離時分開貼帶的基層 24-1和黏接層24-2。此時，如第14圖所示，於剝離黏接 性帶之際，只是剝離貼帶的基層24-1，黏接層24-2是以 黏著在半導體晶片1的狀態而殘存。然後在拾取半導體晶 片1之際，如第15圖所示，用吸附夾頭10將晶片1依然 黏接在黏接層24-2的狀態進行吸附，拉開黏接層24-2並 加以拾取。黏接層24-2強度很高時，也可對著晶片1間 的區域照射雷射光，溶斷黏接層24-2後加以拾取。或者 也可用銳利的刀刃切斷黏接層24-2，或用溶劑至少除去 晶片1間之區域的黏接層24-2後加以拾取。 經濟部智慈財產^7a(工消費合作社印製 第1 6圖是針對有關本發明的第二實施形態的黏接性 帶之剝離機構，黏接性帶之剝離裝置，黏接性帶之剝離方 法，半導體晶片之拾取裝置，半導體晶片之拾取方法，半 導體裝置之製造方法及半導體裝置之製造裝置做說明，表 示剝離機構所用的晶圓吸附部2的其他構成例。該剝離機 構是對應黏接性帶24的剝離量設置切換切換閥26-1〜26-7的控制裝置3 1。於第16圖中，在與第4圖同一構成部 附上相同符號，其詳細說明則予省略。 本第二實施形態是將黏接性帶24的剝離量對應剝離 爪21的位置（例如La〜Lf)、輔助板22的位置及真空幫浦 27-1、27-2的吸引力之變化等來檢測所鄰接的吸附區域2-1〜2-7間的移動，欲對應該檢測結果來切換切換閥26-1 〜26-7 〇 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 569355 A7 B7 五、發明説明（1❾ (請先閱讀背面之注意事項再填寫本頁) 再者，上述剝離爪21 (或輔助板22)的位置La〜Lf的 檢測誤差△ 1爲± 0.5〜10mm，更好爲± 0.5〜5mm的範圍 內，輔助板22的高度△ 2自黏接性帶24的表面起0〜 10mm，更好是在0〜5mm的範圍內爲佳。 按照此種構成，即可更高精度化，於黏接性帶24剝 離之際，即使很薄的半導體晶片也能防止產生裂痕、屑片 等。 利用前述控制裝置31的切換閥26-1〜26-7的控制當 然也適用於半導體晶片的拾取。 經濟部智慈財產局員工消費合作社印製 第17圖至第21圖分別是針對有關本發明的第三實施 形態的黏接性帶的剝離機構，黏接性帶之剝離裝置，黏接 性帶之剝離方法，半導體晶片之拾取裝置、半導體晶片之 拾取方法，半導體裝置之製造方法及半導體裝置之製造裝 置做說明，依序表示黏接性帶之剝離工程和半導體晶片之 拾取工程。本第三實施形態是很適合半導體晶片尺寸很小 (例如3mm□以下）的情形、形成在黏接性帶和半導體晶片 之表面的膜（例如表面保護膜）的密著性非常高的情形、或 像是在表面形成凸起的製品等半導體晶片的表面有很大凹 凸的情形等。 第17圖（a)、（b)是表示抛光工程結束的狀態，U)圖 是立體圖，（b)圖是沿著（a)圖的15B-15B’線的斷面圖。黏 接性帶24是貼合在晶圓環32，單片化的半導體晶圓（半 導體晶片1)是貼合在上述黏接性帶24。上述晶圓環32和 黏接性帶24是在半導體晶圓1的背面抛光工程使用。在 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 - 經濟部智您財產局貸工消費合作社印製 569355 A7 B7 五、發明説明（ 此，上述黏接性帶24最好是從上述單片化的半導體晶圓 1之外周部突出的尺寸（例如大2mm以上）。 從上述半導體晶圓1剝離黏接性帶24之際，如第1 8 圖（a)、（b)所示，於貼合在晶圓環32的黏接性帶24的外 周部接著剝離用貼帶33，將該剝離用貼帶33用剝離爪21 抓住，在與半導體晶片1的吸附面平行的方向拉開並剝離 。或是直接用剝離爪2 1抓住黏接性帶24的端部，在與半 導體晶片1的吸附面平行的方向拉開並剝離。然後先從晶 圓環32剝離黏接性帶24。 黏接性帶24的剝離向前進，在到達固定在晶圓吸附 部（吸附台）的半導體晶圓（半導體晶片）的外周部時，如第 2 1圖（a)所不，黏接性帶2 4已被剝離一定以上的長度（△ L) 。因而，達到半導體晶圓外周部時的剝離角度，乃如第 21圖（b)所示，以半導體晶片1的表面爲基準成爲鈍角八 X(90度以上）。 藉此，從半導體晶片1剝離黏接性帶24所需要的力 就會非常地小，半導體晶片1的尺寸很小的時候、半導體 晶片1之表面保護膜和黏接性帶24的密著性非常高的時 候及半導體晶片1的表面有很大凹凸的時候等均能比較容 易的剝離。因而，沒有剝離不良而外周部的半導體晶片1 依然殘存接著在黏接性帶24。 以後的工程乃與上述第一、第二實施形態相同，如第 19圖（a)、（b)所示，黏接性帶24的剝離超過位於單片化 的半導體晶圓的外周部部分的話，配合黏接性帶24的剝 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I I n I I 11 訂 I 線 (請先閱讀背面之注意事項再填寫本頁) -22- 569355 A7 B7 五、發明説明（20 (請先閲讀背面之注意事項再填寫本頁) 離量（移動量），依序切換晶圓吸附部2的空間分隔的吸附 區域的切換閥26-1〜26-7並加以真空吸引，藉此一邊吸 附固定一邊剝離黏接性帶24。 然後施行從黏接性帶24轉印（吸附固定）到晶圓吸附 部2的半導體晶片1的元件檢查，如第20圖（a)、（b)所示 ’僅良品元件用吸附夾頭1 0加以吸附，且依序拾取。 然後針對上述拾取的半導體晶片1施行晶片接合工程 、托盤裝入工程等。 按照本第三實施形態在半導體晶片尺寸很小，利用真 空吸附所保持的力量很弱的情形下、形成在黏接性帶和半 導體晶片之表面的膜的密著性非常高的情形下、或是半導 體晶片的表面有大凹凸的情形下等均能施行黏接性帶的良 好剝離，且確實拾取半導體晶片。 經濟部智您財產局員工消費合作社印製 再者，上述第三實施形態是使用晶圓環32的情形 爲例所做的說明，但與第一、第二實施形態同樣地也可以 不用晶圓環。此時，黏接性帶24的尺寸是大於半導體晶 圓的外周部（例如2mm以上），藉由從外周部突出，就可 在剝離開始時很容易剝離黏接性帶24。而從配置在晶圓 外周部的半導體晶片1開始剝離黏接性帶24時的角度是 以半導體晶片1的表面爲基準而成鈍角，藉此就能防止半 導體晶片1殘留在黏接性帶24而成爲剝離不良。 第22圖是針對有關本發明的第四實施形態的黏接性 帶之剝離機構，黏接性帶之剝離裝置，黏接性帶之剝離方 法，半導體晶片之拾取裝置，半導體晶片之拾取方法，半 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -23- 569355 A7 B7 五、發明説明（2》 導體裝置之製造方法及半導體裝置之製造裝置做說明，表 示槪略構成。 (請先閱讀背面之注意事項再填寫本頁) 本第四實施形態是在處理室7收容黏接性帶24的剝 離機構（保持台的上面側爲氣密），且加壓剝離的黏接性帶 24側。此時，晶圓吸附部2是從背面側進行真空吸引。 藉此，處理室27的內部和半導體晶片1之固定部的壓力 差變大，就能用很強的吸附力來固定半導體晶片1，並從 半導體晶片1剝離黏接性帶24。 按照此種構成，就能提高單片化的半導體晶圓的吸附 力，連黏接力很強的黏接性帶也會比較容易剝離。 當然不光是黏接性帶的剝離機構，也可將拾取裝置收 容在處理室。而且此種黏接性帶之剝離機構、拾取裝置也 適用於其他的半導體裝置之製造裝置。 經濟部智慧財產局工消費合作社印製 第23圖至第41圖分別是表示上述第一至第四實施形 態所適用的晶圓吸附部的各種構成例。第23圖是將晶圓 吸附部的多孔質材針對黏接性帶的剝離方向分成兩個吸附 區域。第24圖是將晶圓吸附部的多孔質材針對黏接性帶 的剝離方向分成五個吸附區域。第25圖是將晶圓吸附部 的多孔質材針對黏接性帶的剝離方向分爲九個吸附區域。 第26圖至第29圖不但分別將晶圓吸附部的多孔質材 針對黏接性帶的剝離方向分成複数個，也在與剝離方向正 交的方向分成兩半，藉此將各個吸附區域分設爲4、10、 14 、 18 個。 第30圖至第35圖分別爲在晶圓吸附部的多孔質材上 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -24- 569355 A7 B7_ 五、發明説明（2》 (請先閲讀背面之注意事項再填寫本頁) 設置具有多數透孔的面板28，介著該面板28吸附單片化 的半導體晶圓1。第30圖是多孔質材針對黏接性帶的剝 離方向分成兩個吸附區域，第31圖分成五個區域。第32 圖是分成七個區域。而第33圖是多孔質材針對黏接性帶 白勺剝離方向以及與該方向正交的方向分別分成兩半，分成 四個吸附區域，第34圖是分成十個吸附區域，第35是分 成十四個吸附區域。 第36圖至第41圖分別爲在晶圓吸附部的多孔質材上 設置具有對應各半導體晶片的透孔的面板30，介著該面 板30吸附各個半導體晶片。第36圖是多孔質材針對黏接 性帶的剝離方向分成兩個吸附區域，第37圖是分成五個 區域，第38圖是分成七個區域。而第39圖是多孔質材針 對黏接性帶的剝離方向以及與該方向正交的方向分別分成 兩半，分成四個吸附區域，第40圖是分成十個吸附區域 ，第41圖是分成十四個吸附區域。 經濟部智慈財產局肖工消費合作社印製 連此種構成基本上也是與第2圖所示的晶圓吸附部同 樣的，也可以考慮半導體晶片1的尺寸、厚度，黏接性帶 24的黏接力、厚度、柔軟性等選擇最適合的構造。 第42圖（a)、（b)分別爲針對上述第一至第四實施形態 中所適用的晶圓吸附部的另一構成例做說明，使用多孔質 黏接性帶及其支撐構件來吸附單片化的半導體晶圓。第 42圖（a)是多孔質黏接性帶的斷面圖，第42圖（b)是支撐 構件的斷面圖。 多孔質黏接性帶40是用於欲轉印貼合上述黏接性帶 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -25- 569355 A7 B7 五、發明説明（2含 (請先閲讀背面之注意事項再填寫本頁} 24的半導體晶片1。在上述多孔質黏接性帶40是以在多 孔質材41的兩面空氣貫通一面和另一面之間的多數個孔 不會塞住地’以具有通氣性的狀態來塗佈黏接劑42-1、 42-2。在上述多孔質材41是多孔質，也可以採用由陶瓷 、樹脂等製成的材料。而上述黏接劑42-1、42-2的黏接 力設定的比普通的黏接性帶弱。上述多孔質黏接性帶40 乃具有適合半導體晶圓外形的圓形形狀，不抽光其側面空 氣地設有防止抽氣用具43。該防止抽氣用具43是經由例 如黏接性樹脂、黏接性帶等所形成。 一方面在支撐構件45開設貫通一面與另一面的真空 吸附用的透孔44-1〜44-7。該些透孔44-1〜44-7乃分別對 應例如第4圖中之兩系統的真空配管25-1、25-2的切換 閥26-1〜26-7而設置。 並如第43圖所示，是用於將與上述多孔質黏接性帶 40方面的半導體晶片之吸附（轉印）面相反側的面貼合在支 撐構件45。 經濟部智慧財產局B (工消費合作社印製 其次，針對使用上述第42圖及第43圖所示的多孔質 黏接性帶40時的黏接性帶24的剝離工程根據第44圖（a) 、（b)、（c)做說明。 首先如第44圖（a)所示，在支撐構件45的下面，對 應支撐構件45的真空吸附用的透孔44-1〜44-7，配置具 有欲連接真空配管的連接孔的固定治具46，介著支撐構 件45的真空吸附用的透孔、固定治具46的連接孔以及存 在於多孔質黏接性帶40的多數孔，使用真空幫浦27-1做 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） -26- 569355 A7 ___I_B7_ 五、發明説明（24 (請先閲讀背面之注意事項再填寫本頁) 真空吸引。藉此，利用藉由真空幫浦27-1的真空吸附加 和藉由黏接劑42-1的接著力，令單片化的半導體晶圓（半 導體晶片1)固定在多孔質黏接性帶40。此結果就能利用 真空吸附力補充多孔質黏接性帶40的弱黏接力。 經濟部智慧財產局員工消費合作社印製 介著支撐構件45令半導體晶片1處於真空吸附的狀 態，向著箭頭方向拉開貼合於半導體晶片1的黏接性帶 24而剝離。於剝離之際，將黏接性帶24的一端側用剝離 爪2 1來保持，且在黏接性帶24的上部設定輔助剝離的輔 助板22，利用該輔助板22壓在黏接性帶24的上面並彎 曲黏接性帶24，利用剝離爪21將黏接性帶24的一端向 著圖示的箭頭方向拉開而剝離。此時，當對應晶圓吸附部 所鄰接的吸附用的透孔的黏接性帶24的一部分被剝離時 ，利用切換閥切換到第二系統的真空配管25-2，來固定 利用藉由真空幫浦27-2的吸附力和藉由黏接劑42-1的接 著力而剝離的半導體晶片1。在此，多孔質黏接性帶40 的多孔質材41雖沒有空間分隔，但多孔質材41會因隨著 距離變大而令吸引抵抗變大，主要吸引力會由真空吸附用 的透孔普及到位於近距離的半導體晶片1，透孔的近傍即 爲吸附區域。沒有空間分隔就會降低吸附力，就利用藉由 黏接劑42-1的接著力來補充。因而與複數空間分隔相同 〇 黏接性帶24完成剝離，經由真空幫浦27-21的吸引 停止的話，即成爲第44圖（b)所示的狀態。在此狀態’各 半導體晶片1是利用藉由黏接劑42-1的接著力而固定。 i紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） -27- 569355 A7 B7 五、發明説明（2今 (請先閲讀背面之注意事項再填寫本頁) 而從支撐構件45取出固定治具46的話，即如第44圖（c) 所示，半導體晶片1被會轉印於貼合在支撐構件45上的 多孔質黏接性帶40的狀態。在此狀態，向下一個拾取工 程搬送。 拾取工程乃如第45圖（a)所示的加以實行。亦即，轉 印在多孔質黏接性帶40的半導體晶片1之中，選擇良品 並利用吸附夾頭10的真空吸附力來吸附，於箭頭方向（上 方）進行拾取。此時，各半導體晶片1是利用藉由黏接劑 4 2-1的接著力被固定，在此狀態利用吸附夾頭1 〇並且只 用吸附力進行拾取。藉此就能固定殘存於露出的晶圓吸附 部的不良半導體晶片1’、未成爲製品的晶圓的周邊部的 元件。 再者，對應半導體晶片1的尺寸、厚度，多孔質黏接 性帶40的黏接力等需要來進行真空吸引，將半導體晶片 1利用真空吸附力和多孔質黏接性帶40的黏接力兩者來 固定亦可。 經濟部智慧財1局Μ工消費合作社印製 於第45圖（b)表示完成拾取良品半導體晶片1，且不 良半導體晶片Γ殘留在多孔質黏接性帶40上的狀態。 然後如第45圖（c)所示，從殘留不良半導體晶片1’和 未成爲製品的晶圓的周邊部的元件的多孔質黏接性帶40 取出支撐構件45。 上述支撐構件45可在以後的半導體晶片的拾取工程 中重複使用。一方面，多孔質黏接性帶40乃是依然貼合 著不良半導體晶片i ’、未成爲製品的晶圓的周邊部的元 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐〉 569355 A7 _ ___B7_ 五、發明説明（2合 件的狀態加以丟棄。 (請先閲讀背面之注意事項再填寫本頁) 如上所述構成的晶圓吸附部是使用吸附夾頭10來拾 取半導體晶片時，多孔質黏接性帶40的黏接力很低的緣 故，連薄厚化的半導體晶片1也能很容易地從多孔質黏接 性帶40剝開。因而能防止拾取時所發生的半導體晶片1 破損，使製造良品率提高。 再者，上述說明中，在多孔質黏接性帶40的兩面塗 佈黏接劑42-1、42-2，但只在多孔質黏接性帶40的半導 體晶片1的接著面側塗佈黏接劑42-1亦可。此時是在支 撐構件45的表面上塗佈黏接劑。 經濟部智慈財產局員工消費合作社印製 而上述例中，從多孔質黏接性帶40取出支撐構件45 ，施行支撐構件45的再利用，丟棄殘留不良半導體晶片 Γ和未成爲製品的晶圓的周邊部的元件的多孔質黏接性帶 40。且如第46圖（a)所示，在不良半導體晶片Γ(或未成爲 製品的晶圓的周邊部的元件）的表面貼合黏接性帶47，如 第46圖（b)所示，將不良半導體晶片1從多孔質黏接性帶 40剝離，並與黏接性帶47 —起丟棄不良半導體晶片1’亦 可。在此，上述黏接性帶47的黏接力必須比黏接劑42-1 的黏接力還強。 此後，將支撐構件45和多孔質黏接性帶40在下一個 拾取工程中再度利用。像這樣藉由將多孔質黏接性帶40 例如2〜1 0次程度的再利用就能達到減低成本。 其次，針對上述支撐構件45的更具體構成，用幾個 實例做說明。於第47圖至第52圖分別表示支撐構件的平 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -29 - 569355 A7 B7_ 五、發明説明（2分 面圖及斷面圖。 第47圖（a)、（b)所示的支撐構件45a是在由金屬、陶 瓷或樹脂等製成的圓形平板具有複數處開設透孔48的構 成。該些透孔48是對應真空吸附用的透孔（欲連接真空配 管的連接孔）而設。 第48圖（a)、（b)所示的支撐構件45b是由樹脂、陶瓷 等所製成，在以具有許多通氣孔的多孔質材所形成的圓形 平板49的側面設置防止抽氣具50所形成。 第49圖（a)、（b)所示的支撐構件45c是在由金屬、陶 瓷、樹脂等製成的平板中央部的一處形成透孔5 1。 分別於該些第47圖至第49圖所示的支撐構件45a、 45b、45c均未在表面塗佈黏接劑。因而使用此種支撐構 件45a、45b、45c的時候，必在與多孔質黏接性帶40方 面的支撐構件45a、45b、45c的貼合面塗佈接著劑42-2。 對此，分別於第50圖至第52圖所示的支撐構件45d 、45e、45是在一面塗佈接著劑52、53、54。在此，接著 劑52、53、54是分別不塞住真空吸引用之孔地被塗佈。 亦即第50圖（a)、（b)所示的支撐構件45d是於不存在複數 透孔48之區域的表面上塗佈接著劑52。第51圖（a)、（b) 所示的支撐構件45e是在不塞住側面設有防止抽氣具50 的多孔質材49方面的多數個孔地，在其表面上塗佈接著 劑53。而第52圖（a)、（b)所示的支撐構件45f是於一處不 存在透孔51的區域的表面上塗佈黏接劑54。 分別在該些第50圖（a)、（b)至第52圖（a)、（b)所示的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)1T line Intellectual Property Bureau of the Ministry of Economic Affairs (printed by the Industrial and Consumer Cooperative Cooperatives-16-printed by the Employees' Consumer Cooperatives of the Ministry of Economic Affairs and Intellectual Property Cooperatives) 569355 A7 B7_ 5. Description of the invention On the semiconductor wafer of the adhesive tape 24 (step 3), peeling of the adhesive tape 24 starts in this state. At the time of peeling, one end side of the adhesive tape 24 is held by the peeling claw 21, and the adhesive tape 24 The upper part of the belt 24 is provided with an auxiliary plate 22 for assisting peeling, and the auxiliary plate 22 is pressed on the upper surface of the adhesive tape 24 while bending the adhesive tape 24-while using the peeling claw 21 to end one end of the adhesive tape 24 as shown in the figure Pull in the direction of the arrow at a speed of 0.1 mm to 50 mm / sec, and more preferably at a speed of 0.1 mm to 10 mm / sec (step 4). At this time, the peeling claw 21 may have a strength capable of being pulled apart. 21 and the auxiliary plate 22 may be moved and peeled at a certain speed. After the peeling claw 21 is pulled apart a certain distance, the operation of pressing the upper surface of the adhesive tape 24 with the auxiliary plate 22 may be repeated. Then, the wafer adsorption section 2 Adjacent to the adsorption area 2-1 to 2-7, part of the adhesive tape 24 nearby When peeled, the second vacuum vacuum pump 25-2 which is switched to the second system vacuum pipe 25-2 using the switching valves 26-1 to 26-7 is used to adsorb and fix the semiconductor wafer 1 in the peeled adsorption area ( Step 5). FIG. 4 shows a state in which the peeling advances to the boundary region between the adsorption region 2-1 and the adsorption region 2-2, and the switching valve 26-1 is switched. In the same manner, as the adhesive tape 24 is peeled off, The switching valves 26-2 to 26-7 are sequentially switched and executed. Then, when the adhesive tape 24 is completely peeled off, each semiconductor wafer 1 is transferred from the adhesive tape 24 to the wafer adsorption section 21 Each semiconductor wafer is adsorbed and fixed by the second vacuum pump 27-2 through the vacuum pipe 25-2 of the second system (step 6). Furthermore, the auxiliary plate 22 is as shown in FIG. 5 (a). As shown in Figure 5 (b), it is also possible to use an acute angle on the front end. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) '-17- gutter ( Please read the notes on the back before filling out this page) Intellectual Property Office of the Ministry of Economic Affairs a (Printed by the Industrial and Consumer Cooperative ¾ 569355 A7 B7 Explanation (The shape of the tip portion can be determined according to the thickness, adhesive force, flexibility, etc. of the adhesive tape 24. Next, after the position inspection and good product inspection of the semiconductor wafer 1 (step 7), the wafer adsorption portion is started. 2 Pick up each semiconductor wafer 1. After the picking is started, each semiconductor wafer 1 is sucked and fixed to the vacuum pipe 25-2 of the second system by the second vacuum pump 27-2, and the suction chuck 10 is used in this state. Picking is performed using only the suction force (step 8). Then, when picking up and approaching the boundary of the suction area, switch the switching valve and switch to the vacuum pipe 25-1 of the first system, using the first vacuum pump 27-1 to attract the pickup area (step 9-1). Fig. 6 shows a state where the pickup region 2-1 is almost completed and the switching valve 26-1 corresponding to the pickup region 2-1 is closed. Thereby, the semiconductor wafer 1 is picked up and a part of the wafer adsorption part 2 is exposed, thereby preventing the attractive force of the second vacuum pump 27-2 from being lowered, and at the same time, the defects remaining on the exposed wafer adsorption part 2 can be adsorbed and fixed. Wafers, components around the wafer that are not products. When picking up and picking up the semiconductor wafer in the suction area, as shown in Fig. 7, the switching valve may be closed and the suction may be stopped (step 9-2). Fig. 7 shows a state in which the pickups advance to the adsorption area 2-4, and the switching valves 26-1 to 26-3 corresponding to the adsorption areas 2-1 to 2-3 are closed. Then, as shown in FIG. 8, wafer bonding is performed on the lead frame (step 10). In FIG. 8, (a) is a peeling process of the adhesive tape 24, (b) is a pick-up process, and (c) is a semiconductor wafer 1 toward the lead frame 13 using conductive bonding. The process of assembling paste 1 4 etc. ________ This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) I batch of clothing (please read the precautions on the back before filling this page) -18- 569355 A7 B7 V. Description of the invention (1 $ In addition, discard the defective products and the unfinished components on the outer periphery of the wafer (step 11). (Please read the precautions on the back before filling in this page.) According to the structure and method described above, the single-chip semiconductor can be used. The wafer is effectively fixed to the peeling position of the adhesive tape and the most appropriate suction force of the picked-up state of the semiconductor wafer. Therefore, it is possible to prevent the semiconductor wafer which causes problems due to the thinning of the semiconductor wafer when the adhesive tape is peeled off or Cracks and chips are generated during picking up. Also, since only picking up is used for picking up, it is possible to prevent the semiconductor wafer from being damaged by the protruding pin contact portion, which is a problem caused by the picking up of the conventional protruding pin. If the thickness is 50 μm or less, many cracks (100pcs / 100pcs) will occur when the semiconductor wafer is picked up, but by applying the embodiment of the present invention Even if the thickness of the semiconductor wafer is 50 μm or less, it can be reduced to (0 / 100pcs) regardless of the occurrence of cracks. Printed by the Wisconsin Co., Ltd. of the Ministry of Economic Affairs and the Consumer Welfare Cooperative Society Furthermore, the first embodiment described above is a wafer bonding machine As an example, as shown in FIGS. 10 (a), (b), and (c), after the adhesive tape 24 is peeled off, each semiconductor wafer 1 is picked up and loaded into a sorting machine of a tray 15 as shown in FIG. 11. As shown in Figs. (A), (b), and (c), after the adhesive tape 24 is peeled off, each semiconductor wafer 1 is picked up and connected to the mounting substrate 16 by a flip chip, as shown in the first As shown in FIGS. 12 (a), (b), and (c), after the adhesive tape 24 is peeled off, each semiconductor wafer 1 is picked up and assembled on a thermoplastic film substrate 17 with a thin film bonding machine, as shown in FIG. 13 ( As shown in (a), (b), and (c), after the adhesive tape 24 is peeled off, each semiconductor wafer 1 is picked up and mounted on an TAB tape 18 using a heating tool 19a, 19b. Of course, it is also applicable to The peeling mechanism of the adhesive tape and the picking up of the semiconductor wafer. The paper size is applicable to China National Standard (CNS) A4. Grid (210X297mm) ~ -19-569355 A7 B7 V. Description of the Invention (1) Another semiconductor manufacturing device required for the device. (Please read the precautions on the back before filling this page) And the above adhesive tape is 24t It can also be used to separate the base layer 24-1 and the adhesive layer 24-2 during peeling. At this time, as shown in FIG. 14, when the adhesive tape is peeled off, only the base layer 24-1 of the adhesive tape is peeled off. The adhesive layer 24-2 remains in a state of being adhered to the semiconductor wafer 1. Then, when the semiconductor wafer 1 is picked up, as shown in FIG. 15, the wafer 1 is still adhered to the adhesive layer 24 with an adsorption chuck 10. The state of -2 is adsorbed, and the adhesive layer 24-2 is pulled apart and picked up. When the adhesive layer 24-2 is very strong, laser light may be irradiated onto the area between the wafers 1 and the adhesive layer 24-2 may be fused and picked up. Alternatively, the adhesive layer 24-2 may be cut with a sharp blade, or the adhesive layer 24-2 at least in the area between the wafers 1 may be removed with a solvent and picked up. Ministry of Economic Affairs, Intellectual Property ^ 7a (printed by the Industrial and Consumer Cooperatives, Figure 16 is for the peeling mechanism of the adhesive tape according to the second embodiment of the present invention, the peeling device of the adhesive tape, and the peeling of the adhesive tape A method, a semiconductor wafer pick-up device, a semiconductor wafer pick-up method, a semiconductor device manufacturing method, and a semiconductor device manufacturing device will be described, and other configuration examples of the wafer suction section 2 used in the peeling mechanism will be described. The peeling mechanism is corresponding to adhesion The stripping amount of the sex tape 24 is provided with a control device 31 that switches the switching valves 26-1 to 26-7. In FIG. 16, the same components as those in FIG. 4 are assigned the same symbols, and detailed descriptions thereof are omitted. In the second embodiment, the amount of peeling of the adhesive tape 24 corresponds to the position of the peeling claw 21 (for example, La to Lf), the position of the auxiliary plate 22, and changes in the attractive force of the vacuum pumps 27-1 and 27-2. Detect the movement between the adjacent adsorption areas 2-1 ~ 2-7, and switch the switching valve 26-1 ~ 26-7 according to the detection result. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). ) -20- 569355 A7 B7 Explanation (1❾ (Please read the precautions on the back before filling in this page) Furthermore, the detection error of the position La ~ Lf of the above-mentioned peeling claw 21 (or auxiliary plate 22) △ 1 is ± 0.5 ~ 10mm, more preferably ± 0.5 The height Δ 2 of the auxiliary plate 22 ranges from 0 to 5 mm from 0 to 10 mm from the surface of the adhesive tape 24, and more preferably ranges from 0 to 5 mm. According to this structure, higher accuracy can be achieved. When the adhesive tape 24 is peeled off, even a thin semiconductor wafer can prevent cracks, chips, etc. The control of the switching valves 26-1 to 26-7 using the aforementioned control device 31 is of course also applicable to semiconductor wafers. Printed by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs. Figures 17 to 21 are respectively for the peeling mechanism of the adhesive tape of the third embodiment of the present invention, the peeling device of the adhesive tape, The peeling method of the adhesive tape, the picking device of the semiconductor wafer, the picking method of the semiconductor wafer, the manufacturing method of the semiconductor device, and the manufacturing device of the semiconductor device will be described, and the peeling process of the adhesive tape and the picking process of the semiconductor wafer will be sequentially described. The third embodiment is suitable for a case where the size of the semiconductor wafer is small (for example, 3 mm or less), a case where the adhesiveness of a film (for example, a surface protective film) formed on the surface of the adhesive tape and the semiconductor wafer is very high, or For example, the surface of a semiconductor wafer, such as a product having a bump formed on the surface, has a large uneven surface. Fig. 17 (a) and (b) show the state where the polishing process is finished, and U) is a perspective view and (b) It is a sectional view taken along line 15B-15B 'in (a). The adhesive tape 24 is attached to the wafer ring 32, and the singulated semiconductor wafer (semiconductor wafer 1) is attached to the above-mentioned adhesive.接 性 带 24。 Connection 24. The wafer ring 32 and the adhesive tape 24 are used for polishing the back surface of the semiconductor wafer 1. China National Standard (CNS) A4 specification (210X297 mm) applies to this paper scale. -21-Printed by the Ministry of Economic Affairs, Zhiyou Property Bureau, Loan Workers, and Consumer Cooperatives. 569355 A7 B7 V. Description of the invention The size (for example, 2 mm or more) that protrudes from the outer periphery of the singulated semiconductor wafer 1. When the adhesive tape 24 is peeled from the semiconductor wafer 1, as shown in FIG. 18 (a), ( As shown in b), the outer peripheral portion of the adhesive tape 24 attached to the wafer ring 32 is followed by a peeling tape 33. The peeling tape 33 is grasped by the peeling claw 21 and is adsorbed to the semiconductor wafer 1. Pull and peel in a direction parallel to the surface. Or grab the end of the adhesive tape 24 directly with the peeling claw 21, and pull and peel in a direction parallel to the suction surface of the semiconductor wafer 1. Then, first remove from the wafer ring 32 Peel off the adhesive tape 24. When the peeling of the adhesive tape 24 advances, when it reaches the outer peripheral portion of the semiconductor wafer (semiconductor wafer) fixed to the wafer adsorption section (adsorption stage), as shown in FIG. 21 (a ) No, the adhesive tape 2 4 has been peeled off a certain length (△ L). Therefore, As shown in FIG. 21 (b), the peeling angle when reaching the outer periphery of the semiconductor wafer is an obtuse angle of eight X (90 degrees or more) based on the surface of the semiconductor wafer 1. As a result, the adhesion is peeled from the semiconductor wafer 1. The force required for the adhesive tape 24 will be very small, when the size of the semiconductor wafer 1 is small, when the adhesion between the surface protective film of the semiconductor wafer 1 and the adhesive tape 24 is very high, and the surface of the semiconductor wafer 1 It can be easily peeled off when there are large irregularities. Therefore, there is no defect in peeling, but the semiconductor wafer 1 in the outer portion remains and then adheres to the adhesive tape 24. The subsequent processes are the same as the first and second embodiments described above. As shown in (a) and (b) of FIG. 19, if the peeling of the adhesive tape 24 exceeds the outer peripheral portion of the singulated semiconductor wafer, the paper scale for the adhesive tape 24 is applicable to China. National Standard (CNS) A4 specification (210X297 mm) II n II 11 Order I cable (please read the precautions on the back before filling this page) -22- 569355 A7 B7 V. Description of the invention (20 (Please read the back on the first Matters needing attention ) The amount of separation (moving amount) is to sequentially switch the suction valves 26-1 to 26-7 of the suction region separated by the space of the wafer suction section 2 and vacuum-suck them, thereby peeling the adhesive tape 24 while sucking and fixing. Then, a component inspection of the semiconductor wafer 1 transferred from the adhesive tape 24 (adhesion and fixation) to the wafer adsorption unit 2 is performed. As shown in FIGS. 0 is sucked and sequentially picked up. Then the wafer bonding process, tray loading process, etc. are performed for the semiconductor wafer 1 picked up according to the third embodiment. According to the third embodiment, the semiconductor wafer has a small size, and the force retained by vacuum suction is weak. In the case of a film, the adhesion of the film formed on the surface of the adhesive tape and the semiconductor wafer is very high, or the surface of the semiconductor wafer has large unevenness, and the good peeling of the adhesive tape can be performed. , And indeed pick up the semiconductor wafer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The third embodiment described above uses the wafer ring 32 as an example. However, the same as the first and second embodiments, wafers can be omitted. ring. At this time, the size of the adhesive tape 24 is larger than the outer peripheral portion of the semiconductor wafer (for example, 2 mm or more). By protruding from the outer peripheral portion, the adhesive tape 24 can be easily peeled off at the beginning of peeling. The angle at which the adhesive tape 24 is peeled off from the semiconductor wafer 1 disposed on the outer periphery of the wafer is an obtuse angle based on the surface of the semiconductor wafer 1, thereby preventing the semiconductor wafer 1 from remaining on the adhesive tape 24. It becomes peeling failure. 22 is a view showing a peeling mechanism of an adhesive tape, a peeling device of an adhesive tape, a peeling method of an adhesive tape, a pickup device of a semiconductor wafer, and a pickup method of a semiconductor wafer according to a fourth embodiment of the present invention; The paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -23- 569355 A7 B7 V. Description of the invention (2) The manufacturing method of the conductor device and the manufacturing device of the semiconductor device will be described, and the structure will be omitted. (Please read the precautions on the back before filling in this page.) This fourth embodiment is a peeling mechanism that stores the adhesive tape 24 in the processing chamber 7 (the upper side of the holding table is air-tight), and is pressure-peeled. The tape 24 side. At this time, the wafer suction unit 2 is vacuum-sucked from the back side. As a result, the pressure difference between the inside of the processing chamber 27 and the fixing portion of the semiconductor wafer 1 becomes large, and a strong suction force can be used. The semiconductor wafer 1 is fixed, and the adhesive tape 24 is peeled off from the semiconductor wafer 1. According to this structure, the adsorption force of the singulated semiconductor wafer can be improved, and even an adhesive tape with a strong adhesive force can be made smaller than It is easy to peel off. Of course, not only the peeling mechanism of the adhesive tape, but also the pick-up device can be stored in the processing chamber. Moreover, the peeling mechanism and pick-up device of this kind of adhesive tape can also be applied to other semiconductor device manufacturing equipment. Ministry of Economic Affairs Figures 23 to 41 printed by the Industrial and Consumer Cooperatives of the Intellectual Property Bureau show various configuration examples of the wafer adsorption section to which the first to fourth embodiments are applied. Fig. 23 illustrates the porous structure of the wafer adsorption section. The peeling direction of the material with respect to the adhesive tape is divided into two adsorption regions. Fig. 24 is a graph showing the adsorption of the porous material in the wafer adsorption portion into five adsorption regions with respect to the peeling direction of the adhesive tape. The porous material of the wafer is divided into nine adsorption areas with respect to the peeling direction of the adhesive tape. Figures 26 to 29 not only divide the porous material of the wafer adsorption portion into the peeling direction of the adhesive tape, but It is also divided into two in a direction orthogonal to the peeling direction, thereby dividing each adsorption area into 4, 10, 14, and 18. Figs. 30 to 35 show the porous material on the wafer adsorption portion. Paper Zhang scale is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) -24- 569355 A7 B7_ V. Description of the invention (2 "(Please read the precautions on the back before filling this page) Set the panel with most through holes 28 The single-piece semiconductor wafer 1 is adsorbed through the panel 28. Fig. 30 is a diagram showing the separation of the porous material from the adhesive tape into two adsorption regions, and Fig. 31 is divided into five regions. Fig. 32 is divided into There are seven regions. Figure 33 is divided into two halves for the peeling direction of the adhesive material and the direction orthogonal to the direction, and is divided into four adsorption regions. Figure 34 is divided into ten adsorption regions. The 35th is divided into fourteen adsorption regions. FIGS. 36 to 41 are panels 30 each having a through hole corresponding to each semiconductor wafer provided on a porous material of a wafer adsorption portion, and each semiconductor is adsorbed through the panel 30. Wafer. Fig. 36 shows that the porous material is peeled in the direction of the adhesive tape into two adsorption regions, Fig. 37 is divided into five regions, and Fig. 38 is divided into seven regions. In Figure 39, the peeling direction of the porous material for the adhesive tape and the direction orthogonal to the direction are respectively divided into two halves and divided into four adsorption regions. Fig. 40 is divided into ten adsorption regions and Fig. 41 is divided into Fourteen adsorption areas. Printed by Xiao Gong Consumer Cooperative, Intellectual Property Bureau of the Ministry of Economic Affairs. This structure is basically the same as the wafer adsorption section shown in Figure 2. The size and thickness of the semiconductor wafer 1 and the adhesive tape 24 can also be considered. Choose the most suitable structure for adhesion, thickness, and flexibility. Figures 42 (a) and (b) illustrate another example of the structure of the wafer adsorption section applied to the first to fourth embodiments, and use a porous adhesive tape and a supporting member for adsorption. Monolithic semiconductor wafer. Fig. 42 (a) is a sectional view of the porous adhesive tape, and Fig. 42 (b) is a sectional view of the supporting member. The porous adhesive tape 40 is used to transfer and adhere the above adhesive tape. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -25- 569355 A7 B7 V. Description of the invention (2 Semiconductor wafer 1 containing (Please read the precautions on the back before filling in this page} 24. The porous adhesive tape 40 is formed by a plurality of holes between one surface and the other surface of the porous material 41 through the air. The adhesive agent 42-1, 42-2 is applied in a state of being breathable without being clogged. The porous material 41 is porous, and materials made of ceramics, resin, etc. may be used. The adhesive force of the adhesives 42-1 and 42-2 is set to be weaker than that of ordinary adhesive tapes. The porous adhesive tape 40 has a circular shape suitable for the shape of a semiconductor wafer, and does not exhaust the side air. A suction prevention tool 43 is provided on the floor. The suction prevention tool 43 is formed by, for example, an adhesive resin, an adhesive tape, etc. On the one hand, a support member 45 is provided with a through hole for vacuum suction that penetrates one surface and the other surface. 44-1 ~ 44-7. These through holes 44-1 ~ 44-7 correspond to, for example, The switching valves 26-1 to 26-7 of the vacuum piping 25-1 and 25-2 of the two systems in Fig. 4 are provided. As shown in Fig. 43, it is used to connect the above-mentioned porous adhesive tape. The surface on the opposite side of the adsorption (transfer) surface of the semiconductor wafer in 40 aspect is bonded to the support member 45. Printed by the Intellectual Property Bureau B of the Ministry of Economic Affairs (printed by the Industrial and Commercial Cooperatives). The peeling process of the adhesive tape 24 in the case of the porous adhesive tape 40 will be described with reference to Figs. 44 (a), (b), and (c). First, as shown in Fig. 44 (a), the supporting member 45 Underneath, corresponding to the through holes 44-1 to 44-7 for vacuum suction of the support member 45, a fixing jig 46 having a connection hole to be connected to a vacuum pipe is arranged, and the through holes for vacuum suction of the support member 45 are interposed, The connection holes of the fixing fixture 46 and most of the holes existing in the porous adhesive tape 40 are made of vacuum pump 27-1. The paper size is applicable to China National Standard (CNS) A4 (210X29 * 7 mm) -26 -569355 A7 ___I_B7_ 5. Description of the invention (24 (Please read the precautions on the back before filling this page) Vacuum suction. Borrow The singulated semiconductor wafer (semiconductor wafer 1) is fixed to the porous adhesive tape 40 by the vacuum suction of vacuum pump 27-1 and the adhesive force of adhesive 42-1. As a result, the weak adhesive force of the porous adhesive tape 40 can be supplemented by the vacuum adsorption force. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the semiconductor wafer 1 in the state of vacuum adsorption through the support member 45 and pulls it in the direction of the arrow. The adhesive tape 24 attached to the semiconductor wafer 1 is opened and peeled off. When peeling off, one end side of the adhesive tape 24 is held by a peeling claw 21, and an auxiliary peeling is set on the upper part of the adhesive tape 24. The auxiliary plate 22 is pressed against the upper surface of the adhesive tape 24 by the auxiliary plate 22 to bend the adhesive tape 24, and one end of the adhesive tape 24 is pulled apart by the peeling claw 21 in the direction of the arrow shown in the figure to peel off. At this time, when a part of the adhesive tape 24 corresponding to the through-hole for adsorption adjacent to the wafer adsorption section is peeled off, the switching valve is switched to the vacuum pipe 25-2 of the second system to fix the use of the vacuum The semiconductor wafer 1 peeled by the adsorption force of the pump 27-2 and the adhesive force of the adhesive 42-1. Here, although the porous material 41 of the porous adhesive tape 40 has no space separation, the porous material 41 becomes more attractive as the distance increases, and the main attraction is caused by the through holes for vacuum adsorption. It has spread to semiconductor wafers 1 located at a short distance, and the vicinity of the through hole is an adsorption area. Without space separation, the adsorption force is reduced, and it is supplemented by the adhesive force of the adhesive 42-1. Therefore, it is the same as the separation of plural spaces. When the adhesive tape 24 is peeled off and the suction by the vacuum pump 27-21 is stopped, the state shown in FIG. 44 (b) is obtained. In this state ', each semiconductor wafer 1 is fixed by an adhesive force by an adhesive 42-1. i The paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm) -27- 569355 A7 B7 V. Description of the invention (2 today (please read the precautions on the back before filling this page) and the support member 45 When the fixing jig 46 is taken out, as shown in FIG. 44 (c), the semiconductor wafer 1 is transferred to the porous adhesive tape 40 attached to the support member 45. In this state, downward A pick-up process is carried out. The pick-up process is carried out as shown in FIG. 45 (a). That is, the semiconductor wafer 1 transferred to the porous adhesive tape 40 is selected, and a good product is selected and the suction chuck 10 is used. The vacuum suction force is used for suction, and picking is performed in the direction of the arrow (upper). At this time, each semiconductor wafer 1 is fixed by the adhesive force of the adhesive 4 2-1. In this state, the suction chuck 1 〇 and only Picking up by suction force. By this, the defective semiconductor wafer 1 ′ remaining in the exposed wafer suction portion, and the components in the peripheral portion of the wafer which is not a product can be fixed. Furthermore, according to the size and thickness of the semiconductor wafer 1, Stickiness of porous adhesive tape 40 It may be necessary to perform vacuum suction, and the semiconductor wafer 1 may be fixed by using both the vacuum suction force and the adhesive force of the porous adhesive tape 40. Printed on Figure 45 by the M Industrial Consumer Cooperative of the Bureau of Intellectual Property of the Ministry of Economic Affairs (B) shows a state where the good semiconductor wafer 1 has been picked up and the defective semiconductor wafer Γ remains on the porous adhesive tape 40. Then, as shown in FIG. 45 (c), the defective semiconductor wafer 1 'and The support member 45 is taken out of the porous adhesive tape 40 of the component in the peripheral portion of the wafer of the product. The support member 45 can be reused in a subsequent semiconductor wafer pickup process. On the one hand, the porous adhesive tape 40 is The original paper size of the peripheral part of the wafer that is still attached to the defective semiconductor wafer i 'and not yet a product is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm> 569355 A7 _ ___B7_ V. Description of the invention ( The state of the 2 pieces is discarded. (Please read the precautions on the back before filling in this page.) The wafer suction unit configured as described above uses the suction chuck 10 to pick up semiconductor wafers. Because the adhesive force of the mass-adhesive tape 40 is very low, even the thin semiconductor wafer 1 can be easily peeled from the porous adhesive tape 40. Therefore, the semiconductor wafer 1 can be prevented from being damaged during pick-up. In addition, in the above description, although the adhesives 42-1 and 42-2 were coated on both sides of the porous adhesive tape 40, only the semiconductor wafer 1 of the porous adhesive tape 40 was applied. It is also possible to apply adhesive 42-1 on the adhesive surface side. At this time, the adhesive is applied to the surface of the support member 45. It is printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs. The adhesive tape 40 takes out the support member 45, reuses the support member 45, and discards the porous adhesive tape 40 of the remaining defective semiconductor wafer Γ and the components in the peripheral portion of the wafer which is not a product. Further, as shown in FIG. 46 (a), an adhesive tape 47 is bonded to the surface of the defective semiconductor wafer Γ (or a component in a peripheral portion of a wafer which is not a product), as shown in FIG. 46 (b). The defective semiconductor wafer 1 may be peeled from the porous adhesive tape 40 and discarded together with the adhesive tape 47. Here, the adhesive force of the adhesive tape 47 must be stronger than the adhesive force of the adhesive 42-1. Thereafter, the support member 45 and the porous adhesive tape 40 are reused in the next picking process. In this way, cost reduction can be achieved by reusing the porous adhesive tape 40, for example, 2 to 10 times. Next, a more specific configuration of the above-mentioned support member 45 will be described with a few examples. In Figures 47 to 52, the paper sizes of the supporting members are shown in the Chinese standard (CNS) A4 (210X 297 mm). -29-569355 A7 B7_ V. Description of the invention (2 facets and broken The support member 45a shown in (a) and (b) of Fig. 47 is a structure in which a circular flat plate made of metal, ceramic, resin, or the like has a plurality of through-holes 48. The through-holes 48 are It is provided corresponding to the through hole for vacuum suction (the connection hole to be connected to the vacuum pipe). The support member 45b shown in (a) and (b) of Fig. 48 is made of resin, ceramic, etc. The side surface of the circular flat plate 49 formed by the porous material of the pores is formed by the suction preventer 50. The supporting member 45c shown in Figs. 49 (a) and (b) is made of metal, ceramic, resin, or the like. A through hole 51 is formed at a central portion of the flat plate. The support members 45a, 45b, and 45c shown in Figs. 47 to 49, respectively, are not coated with an adhesive. Therefore, such a support member is used. In the case of 45a, 45b, and 45c, the supporting members 45a, 45b, and 45 for the porous adhesive tape 40 must be used. Adhesive 42-2 is applied to the bonding surface of c. In this regard, the support members 45d, 45e, and 45 shown in Figs. 50 to 52 are coated with adhesives 52, 53, and 54 on one side, respectively. The adhesives 52, 53, and 54 are applied without blocking the holes for vacuum suction. That is, the supporting members 45d shown in (a) and (b) of FIG. 50 are provided in the absence of a plurality of through holes 48. The surface of the area is coated with an adhesive 52. The support member 45e shown in Figs. 51 (a) and (b) has a plurality of holes on the side which is provided with a porous material 49 which prevents the suction device 50 from being blocked. An adhesive 53 is applied on the surface. The support member 45f shown in Figs. 52 (a) and (b) is an adhesive 54 applied to the surface of an area where there is no through hole 51. Respectively The paper sizes shown in Figures 50 (a), (b) to 52 (a), and (b) of this paper are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the (Please fill in this page again)

經濟部智慧財產局工消費合作社印製 -30- 569355 A7 B7 五、發明説明（2$ (請先閱讀背面之注意事項再填寫本頁) 支撐構件45d、45e、45f可在與多孔質黏接性帶40方面 的支撐構件之貼合面塗佈接著劑或不塗佈的兩種情形下使 用。 使用上述支撐構件45a〜45f的任一種情形下均設置 真空吸附用的孔，以將多孔質黏接性帶40貼合在該支撐 構件45a〜45f的狀態從支撐構件45a〜45f側進行真空吸 引，就能將半導體晶片真空吸附在多孔質黏接性帶。 按照使用如上述的多孔質材黏接性帶40的晶圓吸附 部的構成，就能倂用利用真空吸引與黏接劑的黏接力，可 將多孔質材黏接性帶40的黏接力抑制的比普通的黏接性 帶小。故剝離黏接性帶24之際，能用真空吸引和黏接劑 的黏接力強力地吸附單片化的半導體晶圓，從多孔質黏接 性帶40拾取半導體晶片1之際，藉由停止或減弱真空吸 引就很容易剝離。藉此防止半導體晶片1破損，提高製造 良品率。 經濟部智慧財產局S工消費合作社印製 以上使用第一至第四實施形態來說明本發明，但本發 明並不限於上述各實施形態，於實施階段在不脫離其主旨 的範圍可做各種變形。而在上述各實施形態係包含各種階 段的發明，得經由揭示的複數構成要件的適當組合提出各 種發明。例如從各實施形態所示的所有構成要件除去幾個 構成要件，即可解決本發明欲解決之課題欄所述之課題的 至少一項，於獲得發明效果欄所述之效果的至少一項的情 形下，得以除去該構成要件的構成而提出成爲發明。 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ29*7公釐） -31 - 經濟部智慧財產局：貝工消費合作社印製 569355 A7 B7_ 五、發明説明（2合 〔發明效果〕 如以上所說明，按照本發明即可獲得減低晶片裂痕、 屑片等不良，製造高品質的半導體裝置，同時抑制製造良 品率下降的黏接性帶之剝離機構，黏接性帶之剝離裝置， 黏接性帶之剝離方法，半導體晶片之拾取裝置，半導體晶 片之拾取方法，半導體裝置之製造方法及半導體裝置之製 造裝置。 〔圖面的簡單說明〕 第1圖是表示有關本發明的第一實施形態的晶片接合 機的槪略構成立體圖。 第2圖是針對剝離機構及拾取機構所用的晶圓吸附部 的構成做說明，（a)圖爲上面圖，（b)圖爲沿著（a)圖的B1-B 1 ’線的斷面圖。 第3圖是針對晶圓吸附部和單片化的半導體晶圓的配 置做說明，（a)圖是表示晶圓吸附部的上面圖，（b)圖是表 示單片化的半導體晶圓的配置例的平面圖，（c)圖表示是 單片化的半導體晶圓的另一配置例的平面圖。 第4圖是針對晶片接合機方面的黏接性帶的剝離機構 做說明的圖。 第5圖是針對輔助板的構成例做說明，（a)圖表示斷 面面，（b)圖是表示另一構成例的斷面圖。 第6圖是針對晶片接合機方面的半導體晶片的拾取機 構做說明的圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ' -32- (請先閲讀背面之注意事項再填寫本頁)Printed by the Industrial and Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -30- 569355 A7 B7 V. Description of the invention (2 $ (please read the precautions on the back before filling this page) The support members 45d, 45e, 45f can be bonded to the porous It is used when the bonding surface of the support member on the side of the tape 40 is coated with adhesive or not. When using any of the support members 45a to 45f, holes for vacuum suction are provided to make the porous The adhesive tape 40 is adhered to the supporting members 45a to 45f, and vacuum suction is performed from the supporting members 45a to 45f, so that the semiconductor wafer can be vacuum-adsorbed to the porous adhesive tape. According to the use of the porous material described above, The structure of the wafer adsorption portion of the adhesive tape 40 enables the use of the adhesive force of the vacuum suction and the adhesive to suppress the adhesive force of the porous material adhesive tape 40 more than that of an ordinary adhesive tape. Therefore, when the adhesive tape 24 is peeled off, the single-chip semiconductor wafer can be strongly adsorbed by the vacuum suction and the adhesive force of the adhesive, and when the semiconductor wafer 1 is picked up from the porous adhesive tape 40, Attracted by stopping or weakening the vacuum It is easy to peel off. This prevents damage to the semiconductor wafer 1 and improves the manufacturing yield. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Industrial Cooperative Cooperative Society. The first to fourth embodiments are used to describe the present invention, but the present invention is not limited to the above. In the implementation stage, various modifications can be made without departing from the gist of the implementation stage. The above-mentioned embodiments include inventions in various stages, and various inventions can be proposed through appropriate combinations of the disclosed plural constituent elements. For example, from each embodiment All the constituent elements shown can be removed by removing several constituent elements, and at least one of the problems described in the column of the problem to be solved by the present invention can be solved, and at least one of the effects described in the column of the invention effect can be removed. The composition of the constituent elements was proposed as an invention. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 29 * 7 mm) -31-Intellectual Property Bureau of the Ministry of Economic Affairs: Printed by Beigong Consumer Cooperative 569355 A7 B7_ V. Invention Explanation (2nd [Effect of Invention] As described above, according to the present invention, wafer cracks and chips can be reduced. Defective wafers, manufacturing high-quality semiconductor devices, while suppressing the peeling mechanism for manufacturing adhesive tapes with reduced yield, peeling devices for adhesive tapes, peeling methods for adhesive tapes, semiconductor wafer pickup devices, semiconductor wafers Pick-up method, semiconductor device manufacturing method, and semiconductor device manufacturing device. [Brief description of drawings] FIG. 1 is a perspective view showing a schematic configuration of a wafer bonding machine according to a first embodiment of the present invention. FIG. 2 is a The structure of the wafer suction section used in the peeling mechanism and the pick-up mechanism will be described. (A) is a top view, and (b) is a cross-sectional view taken along line B1-B 1 ′ of (a). The figure illustrates the arrangement of the wafer adsorption section and the singulated semiconductor wafer. (A) is a top view showing the wafer adsorption section, and (b) is an example of the arrangement of the singulated semiconductor wafer. (C) is a plan view showing another arrangement example of a singulated semiconductor wafer. Fig. 4 is a diagram explaining a peeling mechanism of an adhesive tape in a wafer bonding machine. Fig. 5 illustrates a configuration example of the auxiliary plate, (a) is a sectional view, and (b) is a sectional view showing another configuration example. Fig. 6 is a diagram for explaining a semiconductor wafer pickup mechanism in a wafer bonding machine. This paper size applies to China National Standard (CNS) A4 (210X297 mm) '-32- (Please read the precautions on the back before filling this page)

569355 經濟部智慈財產局員工消費合作社印製 A7 B7五、發明説明（3() 第7圖是針對晶片接合機方面的半導體晶片的拾取機 構的另一構成例做說明的圖。 第8圖是針對拾取的半導體晶片的實裝工程做說明的 槪略圖，（a)圖是黏接性帶的剝離工程’（b)圖是拾取工程 ，（c)圖是裝配工程。 第9圖是晶片接合機方面的晶片接合工程的流程圖。 第1 0圖是針對揀選機做說明’ U)圖是黏接性帶的剝 離工程，（b)圖是拾取工程’（c)圖是托盤裝入工程。 第11圖是針對倒裝片接合機做說明’ U)圖是黏接性 帶的剝離工程，（b)圖是拾取工程’（c)圖是倒裝片連接工 程。 第12圖是針對薄膜接著接合機做說明，U)圖是黏接 性帶的剝離工程，（b)圖是拾取工程，（c)圖是裝配工程。 第13圖是針對內部引線接合機做說明，U)圖是黏接 性帶的剝離工程，（b)圖是拾取工程，（c)圖是裝配工程。 第14圖是針對黏接性帶的另一例做說明，表示黏接 性帶的剝離工程圖。 第1 5圖是針對黏接性帶的另一例做說明，表示半導 體晶片的拾取工程圖。 第1 6圖是針對本發明的第二實施形態做說明，表示 剝離機構所用的晶圓吸附部近傍的構成例圖。 第1 7圖是針對本發明的第三實施形態做說明，表示 背面抛光工程結束的狀態，（a)圖是立體圖，（b)圖是沿著 (a)圖的15B-15B’線的斷面圖。 (請先閱讀背面之注意事項再填寫本頁) 裝. ^ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -33- 569355 經濟部智慧財產局員工消费合作社印製 A7 __B7__五、發明説明（31) 第1 8圖是針對本發明的第三實施形態做說明，表示 從半導體晶圓開始剝離黏接性帶的狀態’ U)圖是立體圖 ，（b)圖是沿著（a)圖的16B-16B’線的斷面圖。 第1 9圖是針對本發明的第三實施形態做說明，表示 進行黏接性帶剝離的狀態’ U)圖是立體圖，（b)圖是沿著 (a)圖的17B-17B1 泉的斷面圖。 第20圖是針對本發明的第三實施形態做說明，表示 拾取工程，（a)圖是立體圖，（b)圖是沿著（a)圖的18B-18B 線的斷面圖。 第2 1圖是針對黏接性帶剝離到半導體晶圓外周部時 的剝離角度做說明，U)圖是黏接性帶剝離到半導體晶片 外周部時的放大斷面圖，（b)圖是（a)圖的放大斷面圖。 第22圖是針對本發明的第四實施形態做說明，表示 槪略構成的圖。 第23圖是表示第一至第四實施形態所適用的晶圓吸 附部的其他構成例，（a)圖是上面圖，（b)圖是沿著（a)圖的 B2-B2’線的斷面圖。 第24圖是表示第一至第四實施形態所適用的晶圓吸 附部的再其他構成例，（a)圖是上面圖，（b)圖是沿著（a)圖 的B 3 - B 3 ’線的斷面圖。 第25圖是表示第一至第四實施形態所適用的晶圓吸 附部的另一構成例，（a)圖是上面圖，（b)圖是沿著U)圖的 B4-B4’線的斷面圖。 第2 6圖是表示第一至第四實施形態所適用的晶圓吸 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -34- 569355 A7 _B7___ 五、發明説明（3$ 附部的再另一構成例，U)圖是上面圖，（b)圖是沿著U)圖 的B5-B5’線的斷面圖。 (請先閲讀背面之注意事項再填寫本頁) 第27圖是表示第一至第四實施形態所適用的晶圓吸 附部的其他構成例，U)圖是上面圖，（b)圖是沿著（a)圖的 B6-B6’線的斷面圖。 第28圖是表示第一至第四實施形態所適用的晶圓吸 附部的再其他構成例，（a)圖是上面圖，（b)圖是沿著（a)圖 的B7-B71泉的斷面圖。 第29圖是表示第一至第四實施形態所適用的晶圓吸 附部的另一構成例，（a)圖是上面圖，（b)圖是沿著（a)圖的 B 8 - B 8 ’線的斷面圖。 第30圖是表示第一至第四實施形態所適用的晶圓吸 附部的再另一構成例，（a)圖是上面圖，（b)圖是沿著（a)圖 的CM-Cl’線的斷面圖。 第3 1圖是表示第一至第四實施形態所適用的晶圓吸 附部的其他構成例，（a)圖是上面圖，（b)圖是沿著（a)圖的 C2-C2’線的斷面圖。 經濟部智慧財產局a(工消費合作社印製 第32圖是表示第一至第四實施形態所適用的晶圓吸 附部的再其他構成例，（a)圖是上面圖，（b)圖是沿著（a)圖 的C3-C3’線的斷面圖。 第33圖是表示第一至第四實施形態所適用的晶圓吸 附部的另一構成例，U)圖是上面圖，（b)圖是沿著（a)圖的 C4-C4’線的斷面圖。 第34圖是表示第一至第四實施形態所適用的晶圓吸 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -35- 569355 A7 B7 i、發明説明（3含 附部的又另一構成例，（a)圖是上面圖，（b)圖是沿著（a)圖 的C5-C5’線的斷面圖。 第3 5圖是表示第一至第四實施形態所適用的晶圓吸 附部的其他構成例，U)圖是上面圖，（b)圖是沿著（a)圖的 C6-C6’線的斷面圖。 第3 6圖是表示第一至第四實施形態所適用的晶圓吸 附部的又其他構成例，U)圖是上面圖，（b)圖是沿著（a)圖 的D 1 - D 1 ’線的斷面圖。 第37圖是表示第一至第四實施形態所適用的晶圓吸 附部的另一構成例，U)圖是上面圖，（b)圖是沿著（a)圖的 D 2 - D 2 ’線的斷面圖。 第3 8圖是表示第一至第四實施形態所適用的晶圓吸 附部的又另一構成例，U)圖是上面圖，（b)圖是沿著（a)圖 的D 3 - D 3 ’線的斷面圖。 第39圖是表示第一至第四實施形態所適用的晶圓吸 附部的其他構成例，（a)圖是上面圖，（b)圖是沿著（a)圖的 D4-D4’線的斷面圖。 第40圖是表示第一至第四實施形態所適用的晶圓吸 附部的再其他構成例，（a)圖是上面圖’（b)圖是沿著（a)圖 的D5-D5’線的斷面圖。 第4 1圖是表示第一至第四實施形態所適用的晶圓吸 附部的另一構成例，（a)圖是上面圖’（b)圖沿著（a)圖的 D6-D6’線的斷面圖。 第42圖是表示第一至第四實施形態所適用的晶圓吸 本紙張尺度適用中國國家標準（CNS ) Α4規格（210x297公羡） ---------批衣-- (請先閱讀背面之注意事項再填寫本頁) 、^1 經濟部智慧財產局Μ工消費合作社印製 -36- 569355 經濟部智慈財產局員工消費合作社印製 A7 _ B7五、發明説明（34 附部的另一構成例，（a)圖是多孔質黏接性帶的斷面圖， (b)圖是支撐構件的斷面圖。 第43圖是針對第一至第四實施形態所適用的晶圓吸 附部的另一構成例做說明，表示貼合第42圖所示的多孔 質黏接性帶和支撐構件狀態的斷面圖。 第44圖是針對使用第42圖及第43圖所示的多孔質 黏接性帶時的黏接性帶的剝離工程做說明，U)圖是剝離 黏接性帶狀態的斷面圖，（b)圖是黏接性帶剝離結束，並 停止利用真空幫浦吸引狀態的斷面圖，（c)圖是卸下固定 治具狀態的斷面圖。 第45圖是針對使用第42圖及第43圖所示的多孔質 黏接性帶時的拾取工程做說明，（a)圖是拾取狀態的斷面 圖，（b)圖是表示結束拾取良品半導體晶片，且不良半導 體晶片殘留在多孔質黏接性帶上狀態的斷面圖，（c)圖是 卸下支撐構件狀態的斷面圖。 第46圖是針對再利用多孔質黏接性帶的不良半導體 晶片的除去工程做說明，（a)圖是貼合黏接性帶狀態的斷 面圖，（b)圖是與黏接性帶一同除去不良半導體晶片狀態 的斷面圖。 第47圖是針對支撐構件的更具體構成例做說明，（a) 圖是平面圖，（b)圖是沿著（a)圖的El-El’線的斷面圖。 第48圖是針對支撐構件的更具體的其他構成例做說 明，U)圖是平面圖，（b)圖是沿著（a)圖的E2-E2’線的斷面 圖。 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） •37- 569355 A7 B7 五、發明説明（3$ 第49圖是針對支撐構件的更具體的又其他構成例做 說明，（a)圖是平面圖，（b)圖是沿著（a)圖的E3-E34泉的斷 面圖。 第50圖是針對支撐構件的更具體的又另一構成例做 說明，（a)圖是平面圖，（b)圖是沿著（a)圖的E4-E4’線的斷 面圖。 第5 1圖是針對支撐構件的更具體其他構成例做說明 ，（a)圖是平面圖，（b)圖是沿著（a)圖的E5-E51泉的斷面圖 〇 第52圖是針對支撐構件的更具體的又其他構成例做 說明，U)圖是平面圖，（b)圖是沿著（a)圖的E6-E6’線的斷 面圖。 第53圖是針對習知半導體裝置之製造工程做說明， 表示單片化的半導體晶圓（半導體晶片）狀態，（a)圖是立體 圖，（b)圖是沿著（a)圖的A_A\線的斷面圖。 第54圖是將習知拾取裝置方面的半導體晶片從黏接 性帶拾取的主要構成部的放大斷面圖。 第55圖是針對半導體晶片厚度爲100μιη以下時的裂 痕做說明，（a)圖是斷面圖，（b)圖是表示半導體晶片剝離 狀態的平面圖。 第56圖是針對半導體晶片厚度爲l〇〇Mm以下時的其 他裂痕做說明，（a)圖是斷面圖，（b)圖是表示半導體晶片 剝離狀態的平面圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) -裝· 訂 經濟部智慧財產局員工消費合作社印製 -38- 569355 A7 B7 五、發明説明（3弓 〔符號說明〕 1…半導體晶片 (請先閱讀背面之注意事項再填寫本頁) 2…晶圓吸附部 2-1〜2-7…吸附區域 3…保持台 4…TV相機 5…引線框供給部 6…引線框搬送裝置 7…銲膏供給裝置 8…接合工具 9…引線框收納部 10…吸附夾頭 11…位置修正台 12…接合頭 1 3…引線框 14…導電性銲膏 15…托盤 經濟部智慈財1局員工消費合作社印製 16…實裝基板 17…薄膜基板 18··· TAB 膠帶 19a、19b…加熱工具 20…吸引裝置 21···剝離爪 22…輔助板 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -39- 569355 A7 B7 五、發明説明（3分 23-1 23 -Ί' …連接 孔 24··· 黏 接 性 帶 24-1 … 貼 帶 的基層 24-2 • · # 黏 接 層 25-1 25 -2. …真空 幫浦 26-1 26 -7· …切換 閥 27··· 處 理 室 28 ^ 30 … 面 板 31… 控 制 裝 置 32… 晶 圓 m 33··· 剝 離 用 貼帶 (請先閲讀背面之注意事項再填寫本頁) 經濟部智恶財產局a(工消費合作社印製 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -40-569355 Printed by A7 B7, Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of Invention (3 (). Figure 7 is a diagram illustrating another configuration example of a semiconductor wafer pickup mechanism for a wafer bonding machine. Figure 8 It is an outline drawing for explaining the mounting process of the picked-up semiconductor wafer, (a) is the peeling process of the adhesive tape, (b) is the picking process, and (c) is the assembly process. Figure 9 is the wafer Flow chart of wafer bonding process on the bonding machine. Figure 10 is a description of the sorting machine. 'U) Figure is the peeling process of the adhesive tape, (b) is the picking process, and (c) is the tray loading. engineering. Fig. 11 is a description of a flip-chip bonding machine. U) is a peeling process of an adhesive tape, (b) is a pick-up process, and (c) is a flip-chip connection process. Fig. 12 is a description of a film bonding machine, U) is a peeling process of an adhesive tape, (b) is a picking process, and (c) is an assembling process. Figure 13 illustrates the internal wire bonding machine. Figure U) is the peeling process of the adhesive tape, (b) is the picking process, and (c) is the assembly process. Fig. 14 illustrates another example of the adhesive tape, and shows a peeling process drawing of the adhesive tape. Fig. 15 is a diagram illustrating another example of an adhesive tape, and shows a pick-up process drawing of a semiconductor wafer. Fig. 16 is a diagram for explaining a second embodiment of the present invention, showing a configuration example near a wafer suction section used in a peeling mechanism. FIG. 17 is a description of the third embodiment of the present invention, showing a state where the back polishing process is completed, (a) is a perspective view, and (b) is a cut along line 15B-15B 'of (a) Face view. (Please read the precautions on the back before filling this page). ^ This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -33- 569355 Printed by A7 of the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs __B7__ V. Description of the invention (31) FIG. 18 is a description of the third embodiment of the present invention, showing a state where the adhesive tape is peeled from the semiconductor wafer. 'U) is a perspective view, and (b) is a view along the (A) A sectional view taken on line 16B-16B 'of FIG. FIG. 19 is a description of the third embodiment of the present invention, showing a state where the adhesive tape is peeled off. 'U) is a perspective view, and (b) is a view taken along the 17B-17B1 spring of (a). Face view. Fig. 20 is a diagram illustrating a third embodiment of the present invention, showing a pick-up process, (a) is a perspective view, and (b) is a sectional view taken along line 18B-18B of (a). Figure 21 illustrates the peeling angle when the adhesive tape is peeled off to the outer periphery of the semiconductor wafer. U) is an enlarged cross-sectional view when the adhesive tape is peeled off to the outer periphery of the semiconductor wafer. (B) Figure is (A) An enlarged sectional view of the figure. Fig. 22 is a diagram illustrating a schematic configuration of a fourth embodiment of the present invention. Fig. 23 is a diagram showing another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a view taken along line B2-B2 'of (a). Sectional view. Fig. 24 is a diagram showing still another configuration example of the wafer suction section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a view along B 3-B 3 along (a). 'Sectional view of the line. Fig. 25 is a diagram showing another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a line along the line B4-B4 'of the line U). Sectional view. Figure 2-6 shows the wafer suction applied to the first to fourth embodiments (please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)- 34- 569355 A7 _B7___ V. Description of the invention (another structure example of the attached part of 3 $, U) is the top view, and (b) is a cross-sectional view taken along line B5-B5 'of U). (Please read the precautions on the back before filling out this page.) Figure 27 shows another example of the structure of the wafer suction section applied to the first to fourth embodiments. U) The figure is the top view, and (b) is the A sectional view taken along line B6-B6 'in (a). Fig. 28 is a diagram showing still another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a view taken along the B7-B71 spring of (a). Sectional view. Fig. 29 is a diagram showing another configuration example of the wafer suction section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a view along B 8-B 8 along (a). 'Sectional view of the line. Fig. 30 is a diagram showing still another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a CM-Cl 'along (a). Sectional view of the line. Fig. 31 is a diagram showing another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a view along a line C2-C2 'of (a). Section view. Bureau of Intellectual Property, Ministry of Economic Affairs a (printed by Industry and Consumer Cooperatives Figure 32 is a diagram showing still another example of the structure of the wafer adsorption section to which the first to fourth embodiments are applied, (a) is the top view, and (b) is the A cross-sectional view taken along line C3-C3 'in (a). Fig. 33 is a diagram showing another configuration example of the wafer suction section to which the first to fourth embodiments are applied. (U) The figure is the top view. Figure b) is a sectional view taken along line C4-C4 'in Figure (a). Fig. 34 shows the dimensions of the wafer absorbing paper to which the first to fourth embodiments are applied. The Chinese national standard (CNS) A4 specification (210X297 mm) -35- 569355 A7 B7 i. Description of the invention (3 with attached parts (A) is a top view, and (b) is a cross-sectional view taken along line C5-C5 'of (a). Figs. 3 and 5 are views showing the first to fourth embodiments. For another example of the structure of the wafer adsorption section to be applied, U) is a top view, and (b) is a cross-sectional view taken along line C6-C6 'of (a). Fig. 36 is a diagram showing still another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. U) is a top view, and (b) is a view along D1-D1 along (a). 'Sectional view of the line. Fig. 37 is a diagram showing another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied, U) is a top view, and (b) is a view along D2-D2 'along (a) Sectional view of the line. Fig. 38 shows still another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. U) is a top view, and (b) is D 3-D along (a). 3 'line cross section. Fig. 39 is a diagram showing another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. (A) is a top view, and (b) is a view taken along line D4-D4 'of (a). Sectional view. Fig. 40 is a diagram showing still another configuration example of the wafer adsorption section to which the first to fourth embodiments are applied. (A) is a top view. (B) is a view along line D5-D5 'of (a). Section view. Fig. 41 shows another example of the structure of the wafer suction section to which the first to fourth embodiments are applied. (A) is the top view. (B) is along the line D6-D6 'of (a). Section view. Figure 42 shows the wafer absorbing paper sizes applicable to the first to fourth embodiments, and the Chinese National Standard (CNS) Α4 specification (210x297 public envy) --------- approved clothing-(Please (Please read the notes on the back before filling this page), ^ 1 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, M-Consumer Cooperative-36- 569355 Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, A7 _ B7 (A) is a cross-sectional view of a porous adhesive tape, and (b) is a cross-sectional view of a supporting member. Fig. 43 is a view applicable to the first to fourth embodiments. Another configuration example of the wafer suction section is described, and a cross-sectional view showing a state where the porous adhesive tape and a supporting member are bonded as shown in Fig. 42 is shown. Fig. 44 is a view using Figs. 42 and 43. The peeling process of the adhesive tape when the porous adhesive tape is shown will be described. U) is a cross-sectional view of the state where the adhesive tape is peeled off, and (b) is the end of the peeling of the adhesive tape, and the use is stopped. A cross-sectional view of the vacuum pump suction state, and (c) is a cross-sectional view of a state where the fixing jig is removed. Fig. 45 illustrates the picking process when the porous adhesive tape shown in Figs. 42 and 43 is used. (A) is a cross-sectional view of the picking state, and (b) is a diagram showing the completion of picking up the good product. A cross-sectional view of a semiconductor wafer with a defective semiconductor wafer remaining on the porous adhesive tape. (C) is a cross-sectional view of a state where the supporting member is removed. Fig. 46 is a description of a removal process of a defective semiconductor wafer that reuses a porous adhesive tape, (a) is a cross-sectional view showing a state where the adhesive tape is attached, and (b) is a view showing an adhesive tape A cross-sectional view of the state of the defective semiconductor wafer is also removed. Fig. 47 is a more specific configuration example of the supporting member, (a) is a plan view, and (b) is a cross-sectional view taken along line El-El 'in (a). Fig. 48 is a diagram for explaining more specific examples of other supporting members. Fig. U) is a plan view, and Fig. (B) is a sectional view taken along line E2-E2 'in Fig. (A). (Please read the notes on the back before filling in this page) This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) • 37- 569355 A7 B7 V. Description of the invention (3 $ Figure 49 is for supporting members (A) is a plan view, and (b) is a cross-sectional view along the E3-E34 spring in (a). Figure 50 is more specific for the support member. (A) is a plan view, and (b) is a cross-sectional view taken along line E4-E4 'of (a). Fig. 51 shows a more specific structure of the supporting member. For illustration, (a) is a plan view, (b) is a cross-sectional view along the E5-E51 spring in (a). Figure 52 is a description of a more specific yet other structural example of the support member. U) is a plan view, and (b) is a cross-sectional view taken along line E6-E6 'in (a). Figure 53 is a description of the manufacturing process of a conventional semiconductor device, showing the state of a singulated semiconductor wafer (semiconductor wafer), (a) is a perspective view, and (b) is A_A along (a) Sectional view of the line. Fig. 54 is an enlarged cross-sectional view of a main component of a conventional pickup device for picking up a semiconductor wafer from an adhesive tape. Fig. 55 illustrates cracks when the thickness of a semiconductor wafer is 100 µm or less, (a) is a cross-sectional view, and (b) is a plan view showing a peeling state of the semiconductor wafer. Fig. 56 illustrates other cracks when the thickness of the semiconductor wafer is 100 mm or less, (a) is a cross-sectional view, and (b) is a plan view showing a peeled state of the semiconductor wafer. This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling out this page)-Binding and Printing Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economy -38- 569355 A7 B7 V. Description of the invention (3 bows [Symbol description] 1 ... Semiconductor wafer (please read the precautions on the back before filling this page) 2 ... Wafer suction section 2-1 ~ 2-7 ... Sucking area 3 ... Holding stage 4 ... TV camera 5 ... lead frame supply unit 6 ... lead frame transfer device 7 ... solder paste supply device 8 ... bonding tool 9 ... lead frame storage portion 10 ... suction chuck 11 ... position correction table 12 ... bonding head 1 3 ... lead frame 14 … Conductive solder paste 15… Printed by the employee ’s cooperative of the Intellectual Property Division 1 Bureau of the Ministry of Economy 16… Mounted substrate 17… Film substrate 18… TAB tape 19 a, 19 b… Heating tool 20… Suction device 21… peeling Claw 22 ... Auxiliary board The paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -39- 569355 A7 B7 V. Description of the invention (3 minutes 23-1 23 -Ί '… Connection hole 24 ··· Sticky Adhesive tape 24-1… taped base layer 24 -2 • · # Adhesive layer 25-1 25 -2.… Vacuum pump 26-1 26 -7 ·… Switch valve 27 ··· Processing chamber 28 ^ 30… Panel 31… Control device 32… Wafer m 33 ··· Peeling tape (please read the precautions on the back before filling this page) Bureau of Intellectual Property, Ministry of Economic Affairs a (printed by the Industrial and Consumer Cooperatives) This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ) -40-

Claims (1)

569355 A8 B8 C8 D8 々、申請專利範圍 1 (請先閲讀背面之注意事項再填寫本頁) 1、 一種黏接性帶之剝離機構，乃屬於剝離接著在單 片北的半導體晶圓的黏接性帶之剝離機構，其特徵爲具備 有： 針對黏接性帶的剝離方向，利用至少分成兩個吸附區 域的多孔質材來吸附固定前述半導體晶圓側的吸附部。 2、 如申請專利範圍第1項所記載的黏接性帶之剝離 機構，其中，更具備有：欲吸附對應前述吸附區域而設的 前述半導體晶圓側的至少兩系統的真空配管，隨著前述黏 接性帶的剝離位置來切換前述真空配管並吸附前述半導體 晶圓。 3、 如申請專利範圍第1項或第2項所記載的黏接性 帶之剝離機構，其中，前述真空配管的切換是前述黏接性 帶的剝離在達到鄰接的前述吸附區域的附近而施行。 4、 如申請專利範圍第1項所記載的黏接性帶之剝離 機構，其中，更具備有加壓所剝離的黏接性帶側的處理室 〇 經濟部智慧財產局員工消费合作社印製 5、 如申請專利範圍第1項所記載的黏接性帶之剝離 機構，其中，前述黏接性帶是貼合在晶圓環。 6、 如申請專利範圍第1項所記載的黏接性帶之剝離 機構，其中，前述黏接性帶是比前述單片化的半導體晶圓 的外周部大2mm以上。 7、 如申請專利範圍第1項所記載的黏接性帶之剝離 機構，其中，前述黏接性帶的剝離開始部的角度相對於前 述吸附部的吸附面爲90度以上。 本紙張尺度適用中國國家揉準（CNS ) μ規格（210X297公釐） -41 - 569355 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 2 8、 一種半導體裝置之製造裝置，其特徵爲具備有： 如前述申請專利範圍第1項所記載的黏接性帶之剝離機構 〇 9、 一種黏接性帶之剝離方法，乃屬於剝離接著在單 片化的半導體晶圓的黏接性帶之剝離方法，其特徵爲具備 有： 針對黏接性帶之剝離方向而介著至少分成兩個吸附區 域的多孔質材，在對應前述吸附區域的至少兩個系統的吸 引路徑來吸附固定前述半導體晶圓側的工程、 和沿著剝離方向剝離前述黏接性帶，且當對應鄰接的 前述吸附區域的黏接性帶的一部分被剝離時，在前述黏接 性帶的剝離達到鄰接的前述吸附區域的附近，切換吸引路 徑並吸附固定前述半導體晶圓的工程。 1 0、一種黏接性帶之剝離裝置，乃屬於剝離接著在單 片化的半導體晶圓的黏接性帶之剝離裝置，其特徵爲： 具備有：針對黏接性帶的剝離方向而具備有由至少分 成兩個吸附區域的多孔質材製成晶圓吸附部，且用來吸附 固定被接著在黏接性帶的單片化的半導體晶圓的保持台、 和欲拉開並剝離前述黏接性帶的端部的剝離爪、 和欲在對應前述晶圓吸附部的各個吸附區域而設的第 一吸引路徑吸附前述半導體晶圓的第一吸引裝置、 和欲在對應前述晶圓吸附部的各個吸附區域而設的第 二吸引路徑吸附前述半導體晶圓的第二吸引裝置、 和將利用前述第一吸引裝置的半導體晶圓的吸附及利 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----^-- (請先閲讀背面之注意事項再填寫本頁) 言569355 A8 B8 C8 D8 々 、 Scope of patent application 1 (Please read the precautions on the back before filling this page) 1. A peeling mechanism of an adhesive tape is a kind of peeling and then bonding of a semiconductor wafer on the north The peeling mechanism of the adhesive tape is characterized in that it includes an adsorbing portion that adsorbs and fixes the semiconductor wafer side by using a porous material divided into at least two adsorption regions with respect to a peeling direction of the adhesive tape. 2. The peeling mechanism of the adhesive tape according to item 1 of the scope of the patent application, further comprising: a vacuum piping for at least two systems on the semiconductor wafer side to be adsorbed corresponding to the adsorption area, and The peeling position of the adhesive tape switches the vacuum piping and sucks the semiconductor wafer. 3. The peeling mechanism of the adhesive tape according to item 1 or 2 of the scope of the patent application, wherein the switching of the vacuum piping is performed when the peeling of the adhesive tape reaches the vicinity of the adjacent adsorption area. . 4. The peeling mechanism of the adhesive tape as described in item 1 of the scope of the patent application, which further includes a processing chamber on the side of the adhesive tape that is peeled off by pressure. 0 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 The peeling mechanism of the adhesive tape according to item 1 of the scope of the patent application, wherein the adhesive tape is attached to a wafer ring. 6. The peeling mechanism of the adhesive tape according to item 1 of the scope of patent application, wherein the adhesive tape is 2 mm or more larger than an outer peripheral portion of the singulated semiconductor wafer. 7. The peeling mechanism of the adhesive tape according to item 1 of the scope of patent application, wherein the angle of the peeling start portion of the adhesive tape is 90 degrees or more with respect to the adsorption surface of the adsorption portion. This paper size applies to China National Standards (CNS) μ specifications (210X297 mm) -41-569355 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. Application for patent scope 2 8. A semiconductor device manufacturing device It is characterized by having: a peeling mechanism for an adhesive tape as described in item 1 of the aforementioned patent application scope. 9. A method for peeling an adhesive tape is a method of peeling and then singulating a semiconductor wafer. The method for peeling an adhesive tape is characterized in that: a porous material which is divided into at least two adsorption regions according to a peeling direction of the adhesive tape is provided in a suction path of at least two systems corresponding to the adsorption regions; The process of suction-fixing the semiconductor wafer side and peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction region is peeled off, the peeling of the adhesive tape reaches The process of switching the suction path and sucking and fixing the semiconductor wafer near the adjacent suction regions. 10. A peeling device for an adhesive tape, which belongs to a peeling device for peeling an adhesive tape followed by singulation of a semiconductor wafer, is characterized by: having: provided for the peeling direction of the adhesive tape There is a wafer adsorption portion made of a porous material divided into at least two adsorption regions, and a holding table for adsorbing and fixing a singulated semiconductor wafer adhered to an adhesive tape, and a substrate to be pulled apart and peeled off. A peeling claw at the end of the adhesive tape, a first suction device for adsorbing the semiconductor wafer in a first suction path provided for each of the adsorption regions of the wafer adsorption section, and a wafer for adsorption to the wafer A second suction device for each of the second suction paths provided in each of the suction regions of the first suction device for suctioning the semiconductor wafer, and a semiconductor wafer that uses the first suction device and the cost-effective paper size are subject to the Chinese National Standard (CNS) A4. Specifications (210X297mm) ---- ^-(Please read the notes on the back before filling this page) 569355 A8 B8 C8 ______ 08 夂、申請專利範圍 3 用前述第二吸引裝置的半導體晶圓的吸附切換到每個吸引 路徑的切換裝置； (請先閲讀背面之注意事項再填寫本頁) 在藉由前述第一吸引裝置在第一吸引路徑吸附前述半 導體晶圓的狀態，利用前述剝離爪拉開並剝離黏接性帶的 端部，且當前述晶圓吸附部鄰接的吸附區域近傍的黏接性 帶的一部分被剝離時，利用前述切換裝置切換吸引路徑， 在對應前述第二吸引裝置的前述吸附區域的第二吸引路徑 吸附前述半導體晶圓。 1 1、如申請專利範圍第10項所記載的黏接性帶之剝 離裝置，其中，在前述黏接性帶上更具備有配置在與前述 剝離方向正交的方向，支撐前述黏接性帶，藉此欲令前述 剝離爪在與前述黏接性帶的表面同一方向移動的輔助板。 12、 如申請專利範圍第10項或第1 1項所記載的黏接 性帶之剝離裝置，其中，前述晶圓吸附部方面的前述單片 化的半導體晶圓的吸附面係具有多數透孔。 13、 如申請專利範圍第10項所記載的黏接性帶之剝 離裝置，前述晶圓吸附部的各個吸附區域是分別對應前述 單片化的半導體晶圓。 經濟部智慧財產局員工消费合作社印製 14、 如申請專利範圍第10項所記載的黏接性帶之剝 離裝置，其中，更具備有：介設在前述晶圓吸附部的吸附 面和前述單片化的半導體晶圓之間，且具有分別對應前述 單片化的半導體晶圓的吸附孔的面板。 1 5、如申請專利範圍第1 0項所記載的黏接性帶之剝 離裝置，其中，更具備有保持前述單片化的半導體晶圓的 -43- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 569355 B8 C8 D8 A、申請專利範圍 4 保持台以及加壓前述剝離爪的處理室。 (請先閲讀背面之注意事項再填寫本頁) 1 6、如申請專利範圍第1 0項所記載的黏接性帶之剝 離裝置，其中，前述黏接性帶是貼合在晶圓環。 17、如申請專利範圍第10項所記載的黏接性帶之剝 離裝置，其中，前述黏接性帶的端部是從前述單片化的半 導體晶圓的外周部突出2mm以上。 1 8、如申請專利範圍第10項所記載的黏接性帶之剝 離裝置，其中，前述黏接性帶的剝離開始部的角度相對於 前述吸附部的吸附面爲90度以上。 19、 一種半導體裝置之製造裝置，其特徵爲具備有： 如前述申請專利範圍第10項所記載的黏接性帶之剝離裝 置。 20、 一種黏接性帶之剝離方法，乃屬於剝離接著在單 片化的半導體晶圓的黏接性帶之剝離方法，其特徵爲具備 有： 經濟部智慧財產局員工消費合作社印製 將接著在黏接性帶的單片化的半導體晶圓載置在針對 黏接性帶的剝離方向而具有由至少分成兩個吸附區域的多 孔質材製成的晶圓吸附部的保持台，且在對應各個吸附區 域而設的第一吸引路徑吸引並吸附固定前述半導體晶圓的 工程、 和利用剝離爪拉開並剝離前述黏接性帶端部的工程、 和當前述晶圓吸附部鄰接的吸附區域近傍的黏接性帶 的一部分被剝離時，在與前述第一吸引路徑相異的第二吸 引路徑吸附固定前述半導體晶圓的工程。 -44- 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X29*7公釐） 569355 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8六、申請專利範圍 5 2 1、一種半導體晶片之拾取裝置，乃屬於具備有剝離 接著在單片化的半導體晶圓的黏接性帶的剝離機構，拾取 各個半導體晶片之拾取裝置，其特徵爲： 具備有：針對黏接性帶的剝離方向具備有由至少分成 兩個吸附區域的多孔質材製成的晶圓吸附部，且用來吸附 固定接著在黏接性帶的單片化的半導體晶圓的保持台、 和欲拉開並剝離前述黏接性帶端部的剝離爪、 和欲在對應前述晶圓吸附部的各個吸附區域而設的第 一吸引路徑吸附前述半導體晶圓的第一吸引裝置、 和欲在對應前述晶圓吸附部的各個吸附區域而設的第 二吸引路徑吸附前述半導體晶圓的第二吸引裝置、 和將利用前述第一吸引裝置的半導體晶圓的吸附及利 用前述第二吸引裝置的半導體晶圓的吸附切換到每個吸引 路徑的切換裝置、 和吸附並拾取各個半導體晶片的吸附夾頭； 在藉由前述第一吸引裝置在第一吸引路徑吸附前述半 導體晶圓的狀態，利用前述剝離爪拉開並剝離黏接性帶的 端部，且當前述晶圓吸附部鄰接的吸附區域近傍的黏接性 帶的一部分被剝離時，利用前述切換裝置切換吸引路徑， 在對應前述第二吸引裝置的前述吸附區域的第二吸引路徑 吸附前述半導體晶圓； 且在前述黏接性帶剝離結束後，利用前述吸附夾頭來 吸附並拾取各個半導體晶片。 22、如申請專利範圍第2 1項所記載的半導體晶片之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ~ (請先聞讀背面之注意事項再填寫本頁) 569355 A8 B8 C8 D8 六、申請專利範圍 6 拾取裝置，其中，在利用前述吸附夾頭吸附並拾取前述各 個半導體晶片之際，使用前述第一及第二吸引裝置的至少 一方，在前述第一吸引路徑及第二吸引路徑的至少一方， 來吸附前述單片化的半導體晶圓。 23、 如申請專利範圍第21項所記載的半導體晶片之 拾取裝置，其中，在利用前述吸附夾頭吸附並拾取前述各 個半導體晶片之際，利用前述第一吸引裝置在第一吸引路 徑吸附半導體晶圓，且在各吸附區域的半導體晶片拾取結 束的時候，利用前述第二吸引裝置在第二吸引路徑進行吸 引。 24、 如申請專利範圍第21項所記載的半導體晶片之 拾取裝置，其中，在利用前述吸附夾頭吸附並拾取前述各 個半導體晶片之際，使用前述第一及第二吸引裝置的至少 一方，在各吸附區域的半導體晶片拾取結束的時候，藉由 前述第一及第二吸引裝置的至少一方結束吸引。 經濟部智慧財產局員工消費合作社印製 25、 如申請專利範圍第2 1項所記載的半導體晶片之 拾取裝置，其中，在前述黏接性帶上更具備有配置在與前 述剝離方向正交的方向支撐前述黏接性帶，藉此令前述剝 離爪在與前述黏接性帶表面同一方向移動的輔助板。 26、 如申請專利範圍第2 1項所記載的半導體晶片之 拾取裝置，其中，前述晶圓吸附部方面的前述單片化的半 導體晶圓的吸附面係具有多數透孔。 27、 如申請專利範圍第21項至第25項的任一項所記 載的半導體晶片之拾取裝置，其中，前述晶圓吸附部的各 -46- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 569355 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8六、申請專利範圍 7 個吸附區域是分別對應前述單片化的半導體晶圓。 28、 如申請專利範圍第2 1項所記載的半導體晶片之 拾取裝置，其中，更具備有：介設在前述晶圓吸附部的吸 附面和前述單片化的半導體晶圓之間，且具有分別對應前 述單片化的半導體晶圓的吸附孔的面板。 29、 如申請專利範圍第2 1項所記載的半導體晶片之 拾取裝置，其中，更具備有：吸附固定前述單片化的半導 體晶圓的保持台及加壓前述剝離爪的處理室。 3〇、如申請專利範圍第21項所記載的半導體晶片之 拾取裝置，其中，前述黏接性帶是貼合在晶圓環。 3 1、如申請專利範圍第2 1項所記載的半導體晶片之 拾取裝置，其中，前述黏接性帶的端部是從前述單片化的 半導體晶圓的外周部突出2mm以上。 32、 如申請專利範圍第21項所記載的半導體晶片之 拾取裝置，其中，前述黏接性帶的剝離開始部的角度相對 於前述吸附部的吸附面爲90度以上。 33、 一種半導體裝置之製造裝置，其特徵爲具備有： 如前述申請專利範圍第2 1項所記載的半導體晶片之拾取 裝置。 34、 一種半導體晶片之拾取方法，乃屬於剝離接著在 單片化的半導體晶圓的黏接性帶後，拾取各個半導體晶片 之拾取方法，其特徵爲具備有= 將接著在黏接性帶的單片化的半導體晶圓，針對黏接 性帶的剝離方向而在對應於由至少分成兩個吸附區域的多 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 569355 A8 B8 C8 _ D8 ~、申請專利範圍 8 孔質材製成的吸附區域而設的第一吸引路徑進行吸引並固 定的工程、 (請先閲讀背面之注意事項再填寫本頁) 和拉開並剝離前述黏接性帶端部的工程、 和當前述鄰接的吸附區域近傍的黏接性帶被剝離時， 在對應前述吸附區域的第二吸引路徑吸附前述半導體晶圓 的工程、 和在前述黏接性帶剝離結束後，利用前述吸附夾頭吸 附並拾取各個半導體晶片的工程。 35、 如申請專利範圍第34項所記載的半導體晶片之 拾取方法，其中，吸附並拾取前述各個半導體晶片的工程 是在將拾取的半導體晶片的背面側在前述第一及第二吸引 路徑的至少一方進行吸引的狀態來施行。 36、 如申請專利範圍第34項所記載的半導體晶片之 拾取方法，其中，吸附並拾取前述各個半導體晶片的工程 是在將拾取的半導體晶片的背面側在前述第二吸引路徑進 行吸引的狀態來施行，當各吸附區域的拾取結束時，切換 到前述第一吸引路徑。 經濟部智慧財產局員工消費合作社印製 37、 如申請專利範圍第34項所記載的半導體晶片之 拾取方法，其中，吸附並拾取前述各個半導體晶片的工程 是在將拾取的半導體晶片的背面側在前述第二吸引路徑進 行吸引的狀態來施行，當各吸附區域的拾取結束時，停止 吸引。 38、 一種半導體裝置之製造方法，其特徵爲具備有·· 在半導體晶圓的表面形成元件的工程、 -48- 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 569355 A8 B8 C8 D8 六、申請專利範圍 9 和將元件形成結束的半導體晶圓沿著切割線或晶片分 割線分開而形成單片化的半導體晶圓的工程、 (請先閱讀背面之注意事項再填寫本頁) 和將接著在黏接性帶的單片化的半導體晶圓載置，針 對黏接性帶的剝離方向而載置在具備有由至少分成兩個吸 附區域的多孔質材製成的晶圓吸附部的保持台，且在對應 前述吸附區域而設的第一吸引路徑進行吸引並吸附固定的 工程、 和拉開並剝離前述黏接性帶端部的工程、 和當鄰接的吸附區域近傍的黏接性帶的一部分被剝離 時’切換到對應前述吸附區域的第二吸引路徑來吸附固定 前述半導體晶圓的工程、 和在前述黏接性帶剝離結束後，使保持台及吸附夾頭 相對性移動，在拾取對象的半導體晶片上移動吸附夾頭的 工程、 和利用前述吸附夾頭來吸附並拾取前述各個半導體晶 片的工程。 經濟部智慧財產局員工消費合作社印製 39、 如申請專利範圍第38項所記載的半導體裝置之 製造方法，其中，更具備有在將前述各個半導體晶片利用 前述吸附夾頭進行吸附並拾取的工程之後，實裝拾取的各 個半導體晶片的工程。 40、 如申請專利範圍第38項所記載的半導體裝置之 製造方法，其中，更具備有在將前述各個半導體晶片利用 前述吸附夾頭進行吸附並拾取的工程之後，將拾取的各個 半導體晶片裝入托盤的工程。 -49- 本紙張尺度適用中國國家揉準（CNS ) A4洗格（210X297公釐）569355 A8 B8 C8 ______ 08 夂, patent application scope 3 The semiconductor wafer adsorption using the aforementioned second suction device is switched to each switching device of the suction path; (Please read the precautions on the back before filling this page) In the state where the first suction device sucks the semiconductor wafer in the first suction path, the end of the adhesive tape is pulled apart and peeled by the peeling claw, and the adhesiveness near the adsorption area adjacent to the wafer adsorption portion is close. When a part of the tape is peeled off, the suction path is switched by the switching device, and the semiconductor wafer is sucked on a second suction path corresponding to the suction region of the second suction device. 1 1. The peeling device for an adhesive tape as described in item 10 of the scope of patent application, wherein the adhesive tape further includes an adhesive tape arranged in a direction orthogonal to the peeling direction to support the adhesive tape. Therefore, the auxiliary plate is intended to move the peeling claw in the same direction as the surface of the adhesive tape. 12. The peeling device of the adhesive tape according to item 10 or item 11 of the scope of the patent application, wherein the adsorption surface of the singulated semiconductor wafer in the wafer adsorption portion has a large number of through holes. . 13. According to the peeling device of the adhesive tape described in item 10 of the scope of the patent application, each of the adsorption regions of the wafer adsorption section corresponds to the singulated semiconductor wafer, respectively. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 14. The peeling device of the adhesive tape as described in item 10 of the scope of patent application, which further includes: an adsorption surface interposed on the wafer adsorption section and the aforementioned single sheet. Panels having singulated semiconductor wafers and having suction holes corresponding to the singulated semiconductor wafers, respectively. 15. The peeling device for an adhesive tape as described in item 10 of the scope of the patent application, which further includes a semiconductor wafer that maintains the aforementioned singulation -43- This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 569355 B8 C8 D8 A, patent application scope 4 holding table and processing chamber for pressing the aforementioned peeling claw. (Please read the precautions on the back before filling in this page) 16. The peeling device of the adhesive tape as described in item 10 of the scope of patent application, wherein the aforementioned adhesive tape is attached to the wafer ring. 17. The peeling device for an adhesive tape according to item 10 of the scope of patent application, wherein the end of the adhesive tape protrudes from the outer peripheral portion of the singulated semiconductor wafer by 2 mm or more. 18. The peeling device for an adhesive tape according to item 10 of the scope of patent application, wherein the angle of the peeling start portion of the adhesive tape is 90 degrees or more with respect to the adsorption surface of the adsorption portion. 19. A device for manufacturing a semiconductor device, comprising: a peeling device for an adhesive tape as described in item 10 of the aforementioned patent application scope. 20. A method of peeling off an adhesive tape is a method of peeling off an adhesive tape followed by singulation of a semiconductor wafer, which is characterized by: The singulated semiconductor wafer on the adhesive tape is placed on a holding table having a wafer adsorption section made of a porous material that is divided into at least two adsorption regions with respect to the peeling direction of the adhesive tape, and is correspondingly The first suction path provided for each suction region attracts and fixes the semiconductor wafer, the process of pulling and peeling off the end of the adhesive tape with a peeling claw, and the suction region adjacent to the wafer suction part When a part of the adjacent adhesive tape is peeled off, the semiconductor wafer is adsorbed and fixed in a second suction path different from the first suction path. -44- This paper size is applicable to China National Standard (CNS) A4 (210X29 * 7mm) 569355 Printed by A8 B8 C8 D8, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application 5 2 1. A semiconductor chip The pick-up device belongs to a peeling mechanism having an adhesive tape that peels off and then singulates a semiconductor wafer. The pick-up device picks up each semiconductor wafer, and is characterized by having: a peeling direction for the adhesive tape It has a wafer adsorption section made of a porous material divided into at least two adsorption regions, a holding table for adsorbing and fixing a singulated semiconductor wafer adhering to an adhesive tape, and a wafer to be opened and peeled off. A peeling claw at the end of the adhesive tape, a first suction device for suctioning the semiconductor wafer in a first suction path provided for each suction region corresponding to the wafer suction section, and a suction device for suctioning the wafer A second suction device for suctioning the semiconductor wafer by a second suction path provided in each of the suction regions; and a suction device for sucking the semiconductor wafer using the first suction device And a switching device that switches the suction of the semiconductor wafer to each suction path by the second suction device, and a suction chuck that suctions and picks up each semiconductor wafer; and the suction by the first suction device on the first suction path The state of the semiconductor wafer is pulled and peeled off the end of the adhesive tape by the peeling claw, and when a part of the adhesive tape near the adsorption area adjacent to the wafer adsorption portion is peeled off, the switching device is used to switch. The suction path sucks the semiconductor wafer in a second suction path corresponding to the suction region of the second suction device; and after the peeling of the adhesive tape is completed, the semiconductor wafer is suctioned and picked up by the suction chuck. 22. The paper size of the semiconductor wafer as described in item 21 of the scope of patent application is subject to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ (Please read the precautions on the back before filling out this page) 569355 A8 B8 C8 D8 VI. Patent application scope 6 A pick-up device, in which, when using the aforementioned suction chuck to suck and pick up each of the semiconductor wafers, at least one of the first and second suction devices is used, in the first suction path and At least one of the second suction paths is used to suck the singulated semiconductor wafer. 23. The semiconductor wafer pick-up device described in item 21 of the scope of application for a patent, wherein, when each of the semiconductor wafers is sucked and picked up by the suction chuck, the first suction device is used to suction the semiconductor crystals in a first suction path. When the semiconductor wafer pickup of each suction region is completed, the second suction device is used for suction in the second suction path. 24. The semiconductor wafer pick-up device described in item 21 of the scope of application for a patent, wherein when the semiconductor wafer is sucked and picked up by the suction chuck, at least one of the first and second suction devices is used, When the semiconductor wafer pickup of each suction region is completed, the suction is completed by at least one of the first and second suction devices. The semiconductor device pick-up device printed by the Intellectual Property Bureau of the Ministry of Economic Affairs' employee consumer cooperative 25, as described in item 21 of the scope of patent application, wherein the adhesive tape is further provided with a device arranged orthogonal to the peeling direction. An auxiliary plate supporting the adhesive tape in a direction, thereby moving the peeling claw in the same direction as the surface of the adhesive tape. 26. The pick-up device for a semiconductor wafer according to item 21 of the scope of the patent application, wherein the adsorption surface of the singulated semiconductor wafer in the wafer adsorption section has a large number of through holes. 27. The pick-up device for a semiconductor wafer as described in any one of the items 21 to 25 of the scope of the patent application, wherein each of the aforementioned wafer adsorption sections is -46- This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) 569355 A8 B8 C8 D8 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Patent application scope The seven adsorption areas correspond to the aforementioned singulated semiconductor wafers, respectively. 28. The pick-up device for a semiconductor wafer as described in item 21 of the scope of the patent application, further comprising: a device interposed between the adsorption surface of the wafer adsorption section and the singulated semiconductor wafer, and having Panels corresponding to the suction holes of the singulated semiconductor wafer, respectively. 29. The device for picking up a semiconductor wafer as described in item 21 of the scope of patent application, further comprising: a holding table that suction-fixes the singulated semiconductor wafer and a processing chamber that presses the peeling claw. 30. The pick-up device for a semiconductor wafer according to item 21 of the scope of patent application, wherein the adhesive tape is attached to a wafer ring. 31. The pick-up device for a semiconductor wafer according to item 21 of the patent application scope, wherein an end portion of the adhesive tape projects from the outer peripheral portion of the singulated semiconductor wafer by 2 mm or more. 32. The device for picking up a semiconductor wafer according to item 21 of the scope of application, wherein the angle of the peeling start portion of the adhesive tape is 90 degrees or more with respect to the adsorption surface of the adsorption portion. 33. A semiconductor device manufacturing device, comprising: a pick-up device for a semiconductor wafer as described in item 21 of the aforementioned patent application scope. 34. A method for picking up semiconductor wafers is a method for picking up individual semiconductor wafers after peeling off the adhesive tapes of singulated semiconductor wafers, and is characterized by having: For singulated semiconductor wafers, according to the peeling direction of the adhesive tape, the Chinese National Standard (CNS) A4 specification (210X 297 mm) is applied to multiple paper sizes corresponding to at least two adsorption areas. (Please first Read the notes on the back and fill in this page) 569355 A8 B8 C8 _ D8 ~, patent application scope 8 The first suction path for the adsorption area made of porous material to attract and fix the process, (Please read the precautions on the back first Fill out this page again) and the process of pulling and peeling off the end of the adhesive tape, and when the adhesive tape near the adjacent adsorption region is peeled off, the semiconductor is adsorbed on the second attraction path corresponding to the adsorption region. Wafer process and the process of sucking and picking up each semiconductor wafer by the suction chuck after the peeling of the adhesive tape is completed. 35. The method for picking up a semiconductor wafer as described in item 34 of the scope of the patent application, wherein the process of sucking and picking up each of the semiconductor wafers is performed on at least the first and second suction paths on the back side of the picked up semiconductor wafer. One side performs the attraction. 36. The method for picking up a semiconductor wafer as described in item 34 of the scope of patent application, wherein the process of sucking and picking up each of the semiconductor wafers is performed in a state where the picked-up semiconductor wafer is sucked on the second suction path in the back side. When the pickup of each adsorption area is completed, it switches to the said 1st suction path. The method for picking up semiconductor wafers printed by the Intellectual Property Bureau of the Ministry of Economic Affairs' employee consumer cooperatives 37, as described in item 34 of the patent application scope, wherein the process of adsorbing and picking up each of the aforementioned semiconductor wafers is to place the picked-up semiconductor wafer on the back side The second suction path is executed in a state where the suction is performed, and when the pickup of each suction region is completed, the suction is stopped. 38. A method for manufacturing a semiconductor device, characterized by having a process of forming elements on the surface of a semiconductor wafer, -48- This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 569355 A8 B8 C8 D8 VI. Application for Patent Scope 9 and the process of forming a single-chip semiconductor wafer by separating the semiconductor wafer with element formation completed along the cutting line or wafer dividing line, (Please read the precautions on the back before filling in this Page) and a singulated semiconductor wafer to be placed on the adhesive tape, and a wafer made of a porous material having at least two adsorption regions for the peeling direction of the adhesive tape. A process for holding and holding the suction section in a first suction path corresponding to the suction area, a process of suction and fixing, a process of pulling and peeling off the end of the adhesive tape, and a process near the adjacent suction area When a part of the adhesive tape is peeled off, a process of switching to a second suction path corresponding to the suction region to suction-fix the semiconductor wafer, and a previous process After the bonding tape is peeled off, the holding table and the suction collet relative movement, on the semiconductor wafer pickup object moving the suction collet engineering, and to the use of the suction collet suction pickup and engineering of the respective semiconductor wafer. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, a consumer cooperative, 39, and a method for manufacturing a semiconductor device as described in item 38 of the scope of patent application, which further includes a process of adsorbing and picking up each of the semiconductor wafers using the adsorption chuck. After that, the process of mounting each picked-up semiconductor wafer is carried out. 40. The method for manufacturing a semiconductor device according to item 38 of the scope of the patent application, further comprising a process of suctioning and picking up each of the semiconductor wafers by using the suction chuck, and then loading each of the picked up semiconductor wafers. Works of pallets. -49- This paper size is applicable to China National Standard (CNS) A4 Washing (210X297mm)
TW091122045A 2001-09-27 2002-09-25 Ablation means for adhesive tape, ablation device for adhesive tape, ablation method for adhesive tape, pick-up device for semiconductor chip, pick-up method for semiconductor chips, manufacturing method and device for semiconductor device TW569355B (en)

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JP2002271536A JP4266106B2 (en) 2001-09-27 2002-09-18 Adhesive tape peeling device, adhesive tape peeling method, semiconductor chip pickup device, semiconductor chip pickup method, and semiconductor device manufacturing method

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US20060019428A1 (en) 2006-01-26
US7300818B2 (en) 2007-11-27

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