TW569314B - Ion source for ion implantation - Google Patents

Abstract

An electron-impact ion source amenable to being retrofit into existing ion implanters which includes an ionization chamber with a plurality of electron guns. The electron guns may be operated together or one at a time. In one embodiment, the electrons emitted from the electron guns are generally parallel to an ion extraction aperture formed in the ionization chamber. In another embodiment of the invention, a filament is used as an electron source which emits electrons in a direction generally perpendicular to the electron beam emitted by the electron guns.

Description

569314569314

發明領域： 本發明主要是關於離子佈植 含有上述離子源之離子佈植系統 且特別關於離子源以及 發明概述： 一電子撞擊離子源可自含有半導 雜劑(也就是b，AS，P ,Ge，；m吊、用之電性活躍掮 中產生離子，上、十去並1 In ’Sb)之氣態注人材剩 曰 述70素藉由離子佈植器植入Si、Ge、GaAs ==述離子源設計不同於傳統離子源設計Field of the Invention: The present invention is mainly related to ion implantation ion implantation system containing the above ion source, and in particular to the ion source and the invention summary: An electron impact ion source may contain a semiconducting impurity (ie, b, AS, P, Ge ，; m ions are used to generate ions in the electrically active tritium, and the gaseous injection of 1 In 'Sb) is used to implant 70% of Si, Ge, and GaAs through an ion implanter == The ion source design is different from the traditional ion source design

且可變？電子能量之第-電子線束= 子最有利之上述電子能量，上述離子 = ==氣蒸氣⑽Η⑷中產生離子分子如隨二 j ^藉由蒸氣器將上述固態十硼化氫變成蒸氣， 注入上述離子源。當分子形態如解離的十 電弧放電裡離子化時，上述咖χ+ —般不會被保存，但較 低階的硼化物BxHy+殘餘物為上述電弧產生的主要形態。And variable? The electron beam-electron beam = the most favorable electron energy above, the ion = == ion molecules generated in the gas vapour, as described above, the solid decaboride is converted into vapor by a vaporizer, and the ions are injected source. When the molecular form is ionized in the dissociated arc discharge, the above-mentioned χ + is generally not preserved, but the lower-order boride BxHy + residue is the main form generated by the above-mentioned arc.

，上述電子撞擊離子源在此提供一個適合在目前用於晶 片製造之離子佈植器中做式樣更新，也就是互補金氧半 體（CMOS)裝置的製造，在上述製造過程中’上述電晶體结 構是由離子佈植連同光罩技術所形成。在實施這種式樣更 新的，徵中，上述電子撞擊離子源保存上述離子佈植器的 離^光學設計，而上述離子佈植器自位於面對上述離子佈 植器的提取電極的上述離子源側，寬約3. 5mm長約5〇_的The above-mentioned electron impact ion source here provides a style update suitable for ion implanters currently used in wafer manufacturing, that is, the manufacture of complementary metal-oxide-semiconductor (CMOS) devices. During the above-mentioned manufacturing process, the above-mentioned transistor The structure is formed by ion implantation and photomask technology. In implementing this style update, the electron impact ion source preserves the ion optical design of the ion implanter, and the ion implanter is located on the ion source facing the extraction electrode of the ion implanter. Side, about 3.5mm wide and about 5〇_ 的

569314569314

^立細長孔’在上述離子源中產生的離子。為完成上述過 程，所描述之離子源設計在此形成一大致符合上 徑剖面之細長電子線束。 ％ % 較佳實施例詳細說明： 第1圖為一離子佈值器的簡要圖，如用在傳統的硼佈 植，製程氣體和電源接頭48連接至離子源42，上述離子源 42藉著介電絕緣套52對上述離子源真空套49保持高伏特 上述離子源套和線束線分別由高真空幫浦5〇和51抽真空。 上述離子源42產生離子，上述離子是自一次元孔徑（即二一 細長細縫）提取且藉電極53加速至一移動能量，上述移動 能量可能等於上述所需佈植能量（在傳統高電流佈植器的 中）的，或者上述移動能量大大的高於上述所需佈植 月b量。上述提取出的離子被射入分析器磁場43，根據離子 的質量電荷比將離子橫向分散，大量分析孔徑（細縫）44僅 讓有用的離子通過並順流到一可動式法拉第以量測離子束 電流，或（當撤除上述法拉第）至位於基材支撐架55上的晶 圓。上述離子束的部份被法拉第47做為樣本，在加減速^ ，，的例子中，上述離子在較上述所需最後佈植能量大的 能量中解離，上述離子通過減速電極57，使上述離子減速 至它們所需最後的能量。在其他佈植器設計中，上述電極 57為一加速電極以給予上述離子能量而具有較高的能量佈 植，且上述電極57的佈植器線束線逆流被絕緣套59絕緣於 接地電位上（上述基材電位上）。^ Elongated pores' are ions generated in the ion source. To complete the process described above, the ion source design described here forms an elongated electron beam generally conforming to the upper diameter profile. %% Detailed description of the preferred embodiment: Figure 1 is a schematic diagram of an ion distributor. If it is used in traditional boron implantation, the process gas and power connector 48 are connected to the ion source 42. The electrical insulation sleeve 52 maintains a high voltage to the ion source vacuum sleeve 49, and the ion source sleeve and the wiring harness are evacuated by high vacuum pumps 50 and 51, respectively. The ion source 42 generates ions. The ions are extracted from the primary aperture (that is, two slender slits) and accelerated to a moving energy by the electrode 53. The moving energy may be equal to the above-mentioned required implantation energy (in the conventional high-current distribution). Of the implant), or the above-mentioned moving energy is much higher than the above-mentioned required implantation amount b. The extracted ions are injected into the magnetic field 43 of the analyzer, and the ions are dispersed laterally according to the mass-to-charge ratio of the ions. A large number of analysis apertures (slits) 44 allow only useful ions to pass and flow downstream to a movable Faraday to measure the ion beam. Current, or (when the Faraday is removed) to the wafer on the substrate support 55. Part of the above ion beam is sampled by Faraday 47. In the example of acceleration and deceleration ^, the ions are dissociated in an energy larger than the required final implantation energy. The ions pass through the deceleration electrode 57 to make the ions. Slow down to the last energy they need. In other implanter designs, the electrode 57 is an accelerating electrode to give the ion energy and has a higher energy implantation, and the harness wire of the electrode 57 is insulated against the ground potential by the insulating sleeve 59 ( Above the substrate potential).

569314 五、發明說明（3) 第1圖簡示具有機械式μ ^ 器’但上述一般減速方法 器。 —人處理一片晶圓的連續式佈植 第1圖中’上述離子源所佔^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 表示，如示樣翻新體積60 ;就#βμ迷佈植器空間由虛線 式樣翻新的離子源的周邊設備所=。述佈植益空間可由被 源相Γ二 考資料Μ申請所述的離子 置，但使上述兩電子搶的應並 46之長方形提取細縫偏移 f自上述耠取孔徑 些元件。上述外部蒸發器28是由二發器‘ D :::= 源如侧氫化物性質材料29的掛禍31所組成。加:器二 二TC器本體30緊密的接觸，且“ 電=:Γ!溫度在.室溫之上。當上述蒸發器的由-熱 述掛禍31和溫度控制蒸發器本體3。之 ，I皿疋藉由氣體供應2〇注入加a氣體所產纟。蒸發的 奴風^物或其他蒸發材料透過傳導管道32注入上述^ 化反應室44，上述離子调因宗几祕止八上迎離子 35亦被m ΐ : Γ 緣6和上述離子源汽缸體 35亦被酿控在接近蒸發溫度或在蒸發溫 化反應室44利用導管34注入上述反應器44和±述== 間介面的加屢氣體’和上述汽缸35保持良好的熱接觸。氣 第7頁 1057-4804-PF(N).ptd 569314 五、發明說明（4) 一 --- 化材料，如汽缸可得之氣體為例，可藉著氣體注入管線33 2至上述離子化反應室44。典型地，當上述反應室“的 = 1x10-5 7町或更小時，在上述反應器以内的氣壓在 3xl0-T〇rr的範圍内。由上述相對的電子搶“和“所產生 的電子線束，透過分別的電子入口孔徑45進入上述離子化 $應室44，並穿過和上述離子化反應室“平行並非常接近 匕含在孔徑陽極46中的提取孔徑細縫。這些架構的血型尺 寸為：上述電子入口孔徑45之直徑7 5mm的圓形孔徑、，上 述電子搶總成42和43的直徑25mm和長65min(尺寸"B")，而 上述離子化反應室45具一高67mm(尺寸"A")。上述離子源 總成自上述固定凸緣到上述離子提取孔徑之表面的整體'高 度為"C"，將上述離子源連同原始特定離子佈植器的長度 折疊，使上述離子源可以被式樣翻新，故上述佈植器的離 子光學可以被保留’（這個尺寸會隨著上述已存在離子佈 植器的型號和樣式而改變）。相同地，上述總成的整體高 度"D"必須要符合上述離子佈植器的樣式翻新體積6〇，在 這個例子中D"包含離子源遮罩4 j，一圓筒狀圍繞物以 保護上述離子源總成的數個内部構件，如上述電子搶“ 43，還有上述電性管件39、4〇以連通電子饋通線37、。 重要地，在上述離子源遮罩41中之斷流器48、49使上 子搶裝配所包含的電極（如第3圖所示）曝露在上述離子 外罩之真空環境’ U延長上述電極之壽命。在上述離子源 遮罩41前亦有-斷電器以安置上述提取孔徑板，而上述提 取孔徑板必須曝露於上述佈植器的提取電極5 3。569314 V. Description of the invention (3) Fig. 1 schematically shows the above-mentioned general deceleration method device having a mechanical μ device. —The continuous implantation of a wafer processed by a person. Figure 1 shows that the above-mentioned ion source occupies ^ ^ ^ ^ ^ ^ ^ ^ ^ ^, as shown in the sample refurbishment volume 60; as for the # βμ 迷 布 器 器 的 间断 线Peripheral equipment of refurbished ion source. The plant-benefit space can be set by the ion described in the source data application, but offsets the rectangular extraction slits of the above-mentioned two electrons, f, and fetches the aperture elements from the above. The above-mentioned external evaporator 28 is composed of a secondary generator ‘D ::: = source 31 such as the side hydride material 29. Plus: Twenty-two TC device body 30 is in close contact, and "Electric =: Γ! The temperature is above room temperature. When the above-mentioned evaporator is controlled by heat 31 and temperature-controlled evaporator body 3. I dish 疋 is produced by injecting a gas plus 20 gas through gas supply. Evaporated materials or other evaporating materials are injected into the above-mentioned reaction chamber 44 through the conduction pipe 32. Ion 35 is also m ΐ: Γ edge 6 and the ion source cylinder block 35 is also controlled near the evaporation temperature or in the evaporation temperature reaction chamber 44 using the conduit 34 to inject the above-mentioned reactor 44 and the above described == interface Repetitive gas' keeps good thermal contact with the above-mentioned cylinder 35. Gas Page 7 1057-4804-PF (N) .ptd 569314 V. Description of the invention (4) One --- chemical materials, such as the gas available in the cylinder as an example The gas can be injected into the ionization reaction chamber 44 through the gas injection line 332. Typically, when the above-mentioned reaction chamber "= 1x10-5 7 or less, the air pressure within the above-mentioned reactor is 3xl0-T0rr. Within range. The electron beams generated by the above-mentioned opposing electrons "and" pass through the respective electron inlet apertures 45 into the ionization chamber 44 and pass through the anode parallel to and very close to the ionization reaction chamber. Extraction aperture slits in 46. The blood group sizes of these architectures are: circular apertures with a diameter of 75 mm in diameter of the above-mentioned electronic inlet aperture 45, diameters of 25 mm and lengths of 65 min (dimensions " B " ), And the ionization reaction chamber 45 has a height of 67mm (size " A "). The overall 'height' of the ion source assembly from the fixed flange to the surface of the ion extraction aperture is " C " The ion source is folded with the length of the original specific ion implanter so that the ion source can be refurbished, so the ion optics of the implanter can be preserved '(this size will vary with the model of the existing ion implanter and Change the style). Similarly, the overall height of the above assembly " D " must conform to the style of the ion implanter refurbished volume 60. In this example, D " contains Sub-source shield 4 j, a cylindrical surrounding to protect several internal components of the ion source assembly, such as the above-mentioned electronic grabbing "43, and the above-mentioned electrical fittings 39, 40 to communicate with the electronic feed-through line 37, . Importantly, the circuit breakers 48 and 49 in the above-mentioned ion source shield 41 expose the electrodes (shown in FIG. 3) included in the assembly of the upper sub-assembly to the vacuum environment of the above-mentioned ion cover. . There is also a circuit breaker in front of the above-mentioned ion source shield 41 to place the extraction aperture plate, and the extraction aperture plate must be exposed to the extraction electrode 53 of the implanter.

569314 五、發明說明（5) --------- 抓4 ^ ^ ^電子搶離子源設計的優點’相對於單一電子槍 參考資料PCT申請中揭露：υ改善穿過上述離 離+ ;i Γ ^電子帶電密度均勻度剖面，因為改善沿上述 t杈之電子帶電密度均勻度；2)增加注入離子化 子線束電流的注入（多至兩個要素），由產生離 增加量造成；3)可操作單-電子槍而另-支 ^ Ζ ϋΠ，以增加離子源維修之間所需的時間，（在 〜中，，可藉著給上述未使用電子槍之最外側鏡片一 極電壓的伏特數，使上述電子搶成一電子斥體）。 利用外部磁場沿著上述電子線束轴方向，根據上述參 考資料PCT申請中所述之反射模式欽述，電子離子化的反 3操作形態可以成立，若不需要反射模式，則當使用一支 電子搶時，則未使用之電子搶最外層的鏡片有一偏壓遠大 於電極電位，而上述鏡片亦可收集自上述第一電子搶產 生，並傳送至上述離子化反應室44的電子線束，以 述電子流的值。 、藉著將上述壓力敏·感電極放置在距上述離子化反應室 遠處，且使上述電極曝露在上述離子源真空外罩49的高真 空環境中，可使上述電極保有較長的生命期。藉著將丄述 電子槍變小，連同設計良好的電子光學使可預應控制上述 電子線束的空間和動量上的特性，產生一高性能、高電流 電子衝擊離子源以提供所需的離子化，容易分離分j 的離子線束產生。 第3圖所示上述電子槍總成42的細部。上述圓筒對稱569314 V. Description of the invention (5) --------- Grasping 4 ^ ^ ^ The advantages of the electronic grab ion source design 'compared to the single electron gun reference PCT application revealed: υ improved through the above ionization +; i Γ ^ electron charge density uniformity profile, because the electron charge density uniformity along the above t branch is improved; 2) the increase of the injection of the ionized sub-beam current (up to two factors), caused by the increase in the amount of ionization; 3 ) One-electron gun can be operated while the other is ^ ϋ ϋ ϋΠ to increase the time required between ion source repairs. (In ~, the volts of the pole voltage of the outermost lens of the above-mentioned unused electron gun can be increased So that the above electrons become an electron repulsor). Using an external magnetic field along the direction of the above-mentioned electron beam axis, according to the reflection mode described in the above reference PCT application, the anti-3 operation mode of electron ionization can be established. If the reflection mode is not required, an electron At this time, the outermost lens of the unused electron grabber has a bias voltage much larger than the electrode potential, and the above-mentioned lens can also be collected from the electron beam generated by the first electron grabber and transmitted to the ionization reaction chamber 44 to describe the electrons. The value of the stream. By placing the pressure-sensitive electrode at a distance from the ionization reaction chamber and exposing the electrode to the high vacuum environment of the ion source vacuum cover 49, the electrode can be maintained for a longer life. By reducing the size of the electron gun, together with well-designed electron optics, the space and momentum characteristics of the electron beam can be controlled in advance to produce a high-performance, high-current electron impact ion source to provide the required ionization. It is easy to separate the ion beam generated by j. The detail of the above-mentioned electron gun assembly 42 is shown in FIG. Symmetry above

569314 五、發明說明（6) 總成4 2 (43)包含在一圓筒外罩5〇内，是由電極總成51， whenelt /極板網栅總成52，正極圓筒53，聚焦圓筒54，出 口電極總成55，出口孔徑56，以及電子入口孔徑45。一大 孔徑6 1被切入上述外罩5 〇以使電極曝露在上述離子源外罩 49的真空環境，以延長電極壽命。上述架構定義電子入口 孔徑和離子化反應室壁有接觸，並位於上述反應室44的埋 頭孔底部，且具有反應室電位。這使得上述電子光學稍稍 的穿過上述反應室壁，減少整體尺寸” D”，並降低上述電 子束必須傳播到最後所需能量的距離，在易受空間載電力 影響時。所有的組件51 -56組成一鏡片系統，45被維持一 合理不同的DC伏特。如以上PCT申請中揭露，上述鏡片系 統由提取平台58(7〇件51、52、53)，非對稱EINZEL鏡片 (AEL)59(元件53、54、55)，和雙孔徑鏡片（DAL)6〇(元件 56 : 45)。注意孔徑56和出口圓筒55具相同電位，和上述 圓筒55直接接觸。由平面電極發射器51 藉著-相等於上述電子線束所需能量之電壓…述 =應室44時具相對於上述離子化反應室“的負電荷， η電=提取平台58集中並加速，使上述熱電子具有 足夠的尨置克服空間電荷力，有數位kev的差，當上述 AEL59使上述電子減速至較低能量，且準直上述電子 ί離進入，上述電子線束更進-步的被減速 子ΐΐΐ 能量的~需最後電子能i，而上述電 的電子搶=ΐ ^離子化反應室44。一個相似於第3圖所示 的電子搶U亦示於上述PCT中請之參考f料的第Μ圖。569314 V. Description of the invention (6) Assembly 4 2 (43) Contained in a cylinder cover 50, which is composed of an electrode assembly 51, a whenelt / electrode grid assembly 52, a positive cylinder 53 and a focusing cylinder 54 , Outlet electrode assembly 55, outlet aperture 56, and electron inlet aperture 45. A large aperture 61 is cut into the cover 50 to expose the electrode to the vacuum environment of the ion source cover 49 to extend the life of the electrode. The above-mentioned structure defines that the aperture of the electron entrance is in contact with the wall of the ionization reaction chamber, is located at the bottom of the counterbore of the reaction chamber 44, and has a reaction chamber potential. This allows the above-mentioned electron optics to pass through the wall of the reaction chamber slightly, reducing the overall size “D”, and reducing the distance that the above-mentioned electron beam must travel to the last required energy, when it is susceptible to space-borne power. All components 51-56 form a lens system, and 45 are maintained at a reasonably different DC volt. As disclosed in the above PCT application, the above-mentioned lens system consists of an extraction platform 58 (70 pieces 51, 52, 53), an asymmetric EINZEL lens (AEL) 59 (elements 53, 54, 55), and a dual-aperture lens (DAL) 6 O (Element 56: 45). Note that the aperture 56 and the outlet cylinder 55 have the same potential and are in direct contact with the above-mentioned cylinder 55. By the plane electrode emitter 51, the voltage equal to the energy required for the above-mentioned electron beam is described by the = negative voltage of the reaction chamber 44 relative to the above-mentioned ionization reaction chamber, η electricity = the extraction platform 58 is concentrated and accelerated, so that The above hot electrons have sufficient settings to overcome the space charge force, and there is a difference in digital kev. When the AEL59 decelerates the electrons to a lower energy and collimates the electrons, the electron beams are further decelerated. The energy of the electron ~ needs the final electronic energy i, and the above-mentioned electron electron grab = ^ ^ ionization reaction chamber 44. An electron grab similar to that shown in Fig. 3 is also shown in the above PCT. Figure M.

I 第10頁 l〇57-4804-PF(N).ptd 569314 五、發明說明（7) 舉例來說，一相對準直的線束可在上述AEL59輸出時產生 一電子能ΙΟΟΟΕν ’故鏡片元件55可有相對於上述電極電位 1000V的電位，若鏡片元件45電位相對於電極為ιοον，上 述DAL就成為10:1的減速鏡片，射出1〇〇6卩的電子至上述離 子化反應室4 4内。 除了我正在申请範圍以及第2圖和第3圖中的幾何學 外，其他幾何學為可能，並具有某些優點。 第4 A圖所，示為一離子源簡示圖，在上述離子源之上述 電子沿著上述提取離子線束方向被注入離子化反應室中。 透過燈絲導線71和直流電源供應器72加熱燈絲7〇，以沿著 上述燈絲長度發射電子7 3，上述燈絲可以為一帶狀物，或 一厚鎢線，舉例來說，上述燈絲7〇藉著上述電源供應器72 偏壓低於上述離子化反應室75的電位，所以上述電子可加 速穿過位於上述離子化反應室75背面中央的長方形入口縫 74 ’並和離子提取孔徑76對正。在上述入口縫面對的上述 反應室75位置安置一二極體。這個幾何圖形之上視圖示於 第4b圖之投影線D-D ’丰述延伸之電子線束會在上述離子 化反應室75中將上述氣體離子化；上述離子由位於上述離 子提取孔徑板77上之上述提取孔徑76所提取，這樣產生的 上述離子線束一般來說應為均勻的，因為上述電子線束和 在上述離子化反應室75中通過氣體的長度相同，皆沿上述 離子提取孔徑76的長度。亦因為上述電子線束在垂直尺寸 較長，對於空間電荷炸毀較不敏感，故較小而圓的電子線 束高的整體電子電流可被送入上述離子化反應室75中。I Page 10 l57-4804-PF (N) .ptd 569314 V. Description of the invention (7) For example, a relatively collimated wire harness can generate an electronic energy when the above AEL59 is output. 〇ΟΟΕν 'Therefore, the lens element 55 There may be a potential of 1000V with respect to the above electrode potential. If the potential of the lens element 45 is ιοον with respect to the electrode, the DAL becomes a 10: 1 reduction lens and emits 1006 卩 of electrons into the ionization reaction chamber 44. . With the exception of the scope I am applying for and the geometry in Figures 2 and 3, other geometries are possible and have certain advantages. Fig. 4A is a schematic diagram of an ion source, in which the electrons of the ion source are injected into the ionization reaction chamber along the direction of the extracted ion beam. The filament 70 is heated through the filament wire 71 and the DC power supply 72 to emit electrons 7 3 along the length of the filament. The filament may be a ribbon or a thick tungsten wire. For example, the filament 70 is borrowed. The bias voltage of the power supply 72 is lower than the potential of the ionization reaction chamber 75, so the electrons can accelerate through the rectangular entrance slit 74 'located at the center of the back of the ionization reaction chamber 75 and be aligned with the ion extraction aperture 76. A diode is placed at the position of the reaction chamber 75 facing the entrance slit. The top view of this geometric figure is shown in the projection line DD 'of Figure 4b. The extended electron beam will ionize the gas in the ionization reaction chamber 75; the ions are formed by the ion extraction aperture plate 77. In general, the ion beams generated by the extraction aperture 76 should be uniform, because the lengths of the electron beams and the passing gas in the ionization reaction chamber 75 are the same, and they are all along the length of the ion extraction apertures 76. Also, because the above-mentioned electron beams are longer in the vertical dimension and less sensitive to space charge bombing, the overall electron current of the small and round electron beams can be sent to the above-mentioned ionization reaction chamber 75.

1057-4804-PF(N).ptd 569314 五、發明說明（8) 在較佳表現的建構能力中，具有一長形細縫的網極被 f在燈絲70和反應室入口孔徑74中，以改善上述電子束的 1焦’上述組件包含一三極真空管，為避免因上述燈絲蒸 ^，上述入口孔徑74而產生上述離子化反應室的過渡金屬 /亏染物’以及最後鎢和銖轉移到上述反應室75中，上述燈 絲最好以碳組成。 第5圖的簡示圖顯示一四極管的裝置，其中一燈絲 7〇丄第一電極78，第二電極79以及離子化反應室入口孔徑 7/皆具不同電位，但這個方法並不僅限於四極管。舉例來 f ’可加入一個或數個相似於上述電極78和79的電極。而 這二實施例的優點為：1)上述燈絲可放置於壓力較低的位 置以延長燈絲的壽命（在某些實施例中，上述偏離的位置 具有專用的幫浦）；2 )上述燈絲的偏離位置可防止上述 燈絲材料造成上述離子化反應室污染物的生成；3)上述鏡 片系統促使上述電子線束加速-減速的傳送，使得上述離 子化反應室内達到較高的電子流。 第6a-6c圖顯示本發明的較佳實施例，其中一外加電 子搶8 0沿著上述離子源轴的方向固定，並被固定在真空外 上述離子源固定凸緣36上。上述電子搶包含在外罩81之 中，上述外罩81特徵在於用來分離上述電極的注入和電子 搶80的提取平台。上述電子搶的設計和第3圖所示相似， 仁具有較大的電極直徑和鏡片架構。上述電子搶是由熱電 子電極51, ，whenelt/柵極電極52，，正極圓筒53,，對、焦 圓筒54，，出口圓筒55，，四極鏡片83，和漂移區塊^。…上 第12頁 569314 五、發明說明（9) 述電子搶80以和第3圖相似的方式產生一高電流電子 然而在上述AEL(元件53, 、54, 、55，）出口，上述電子 微微的分叉並達到最後的電子能量（在上述離子反應室乃， 氣體種類：離子化較佳能量）。上述四極鏡片的線 二和;Γ:亩：二對稱圓柱或長方形’ •一般來說會x(側 向）和Y(垂直）方向延伸。四極鏡片的動作僅在一維對隹。 上述鏡片83為X-對焦的四極鏡片；故上述鏡片被建構安置 在近上述離子提取孔徑76的位置以在X方向產生對焦。因 此，在穿過位於上述離子源區塊35,末端的拉長長方形孔 徑85和上述離子化反應室入口孔徑74，後上述四極鏡片 $生均勻的電子電流線，而上述電子電流線大致符合約為 50mm X 3. 5mm離子提取孔徑76的尺寸大小❶因為電子線束 具有在四極鏡片83和上述離子提取孔徑76之間有橢圓形剖 ^ j長方形孔徑85較入口孔徑74,寬，故較提取孔徑76 上述鏡片可靜電或磁靜電，而兩者各有優點。如果要 必要，上述飄移區域84可多具一光學以修正上述四極鏡片 84造成的相差。第“為第6a圖的上視圖，而第化圖為上述 離子源總成的三維視圖。 簡s之’第6圖的實施例具有以下的優點··丨）上述伸 長較大直徑電子搶具有一專屬幫浦以延長電極壽命；2) — 4專、、先碟形平面電極可用來提供高電流和長使用期限；3)上 述平面電極可移動且不會輻謝散熱至上述離子反應室和其 他”、、感度元件，4)使用複雜的鏡片系統使產生所需電子線 第13頁 1057-4804-PF(N).ptd 569314 五、發明說明（10) 束的特性有彈 如投射到上述 和同量的高離 剖面較佳控制 透鏡前放大上 述四極鏡片的 雖然本發 限本發明， 神和範圍内， 當視後附之申 性且控 離子提 子電流 空間載 述線束 逆流。 明已以 任何熟 當可作 請專利 制上述電子線束的均勻度和球形範圍 取孔徑上；5)可達到高電子線束電流 ，因為利用瘦長的電子線束載電密度 電，空間載電亦藉著在射入上述四極 時將上述線束減速穿過AEL來控制上 較佳實施例揭露如上，然其並非用以 習此項技藝者，在不脫離本發明之精 更動與潤飾，因此本發明之保護範圍 範圍所界定者為準。1057-4804-PF (N) .ptd 569314 V. Description of the invention (8) In the construction ability with better performance, the mesh with a long thin slit is f in the filament 70 and the inlet aperture 74 of the reaction chamber, Improve the 1-joule of the above-mentioned electron beam. The above-mentioned component includes a three-pole vacuum tube. In order to avoid the above-mentioned filament vaporization, the above-mentioned inlet aperture 74, the transition metal / defective material of the ionization reaction chamber, and finally tungsten and baht are transferred to the above In the reaction chamber 75, the filament is preferably composed of carbon. The schematic diagram of FIG. 5 shows a tetrode device, in which a filament 70, the first electrode 78, the second electrode 79, and the entrance aperture 7 / of the ionization reaction chamber have different potentials, but this method is not limited to Tetrode. For example, f 'may add one or several electrodes similar to the electrodes 78 and 79 described above. The advantages of these two embodiments are: 1) the filament can be placed in a lower pressure position to extend the life of the filament (in some embodiments, the deviation position has a dedicated pump); 2) the filament The deviation can prevent the filament material from causing the ionization reaction chamber to generate pollutants; 3) the lens system promotes the acceleration-deceleration transmission of the electron beam, so that the ionization reaction chamber reaches a higher electron flow. Figures 6a-6c show a preferred embodiment of the present invention, in which an external electron source 80 is fixed in the direction of the axis of the ion source and is fixed on the ion source fixing flange 36 outside the vacuum. The above-mentioned electronic grab is included in the cover 81, which is characterized by a platform for separating the injection of the above-mentioned electrodes and the extraction platform of the electronic grab 80. The design of the above-mentioned electronic grabber is similar to that shown in Fig. 3. The core has a larger electrode diameter and lens structure. The above-mentioned electron grabbing is composed of a thermoelectric electrode 51, a whenelt / gate electrode 52, a positive electrode cylinder 53, a counter-focal cylinder 54, an outlet cylinder 55, a quadrupole lens 83, and a drift block ^. … On page 12 569314 V. Description of the invention (9) The electron grab 80 described above generates a high-current electron in a manner similar to that shown in Figure 3. However, at the exit of the above AEL (element 53, 54, 54, 55,), the above electrons are slightly Fork and reach the final electron energy (in the above ion reaction chamber, the type of gas: better energy for ionization). The above-mentioned quadrupole lens has two lines; Γ: mu: two symmetrical cylinders or rectangles' • Generally speaking, it will extend in the x (lateral) and Y (vertical) directions. The quadrupole lens opposes only one dimension. The above-mentioned lens 83 is an X-focusing quadrupole lens; therefore, the above-mentioned lens is constructed and disposed near the above-mentioned ion extraction aperture 76 to generate focus in the X direction. Therefore, after passing through the elongated rectangular aperture 85 at the end of the ion source block 35 and the entrance aperture 74 of the ionization reaction chamber, the quadrupole lens generates uniform electron current lines, and the electron current lines generally conform to about The size of the ion extraction aperture 76 is 50mm X 3.5mm. Because the electron beam has an elliptical section between the quadrupole lens 83 and the above-mentioned ion extraction aperture 76, the rectangular aperture 85 is wider than the entrance aperture 74, so it is larger than the extraction aperture. 76 These lenses can be electrostatic or magnetostatic, and each has its advantages. If necessary, the drift region 84 may have an additional optical lens to correct the phase difference caused by the quadrupole lens 84. Figure "is the top view of Figure 6a, and Figure 3 is a three-dimensional view of the ion source assembly. The embodiment of Figure 6 has the following advantages ..." The above-mentioned elongated larger diameter electron grab has An exclusive pump to extend the life of the electrode; 2) — 4 special, disc-shaped planar electrodes can be used to provide high current and long life; 3) the above-mentioned planar electrode can be moved without radiating heat to the ion reaction chamber and Others ", sensitivity elements, 4) Use complex lens systems to generate the required electrons. Page 13 1057-4804-PF (N) .ptd 569314 5. Description of the invention (10) The characteristics of the beam are projected as described above. It is better to control the magnification of the above-mentioned quadrupole lens in front of the lens with the same amount of high separation profile. Although the present invention is limited to the present invention, within the scope of the present invention, the current of the ion beam is controlled by the control of the ion current in the space to describe the backflow of the beam. Ming has used any familiarity to patent the above-mentioned uniformity and spherical range of the electronic wire harness to take the aperture; 5) High electron beam current can be achieved, because the thin electron wire harness is used to carry the electricity density electricity, and the space electricity is also used to When the above-mentioned quadrupole is injected, the above-mentioned wire harness is decelerated through the AEL to control the above-mentioned preferred embodiment. The above-mentioned preferred embodiment is disclosed above, but it is not intended to be used by those skilled in the art, without departing from the fine modification and retouching of the present invention. Therefore, the protection of the present invention The scope of the scope shall prevail.

1057-4804-PF(N).ptd 第14頁 569314 1 I·1· I— 圖式簡單說明 圖式簡單說明： 圖為-離子佈植器之離子的一般 第2圖為一具有本發明所提出 f。 例剖面圖。 的離子源實施 第3圖為第2圖所示之雷不佟 A m ^ 子槍的放大剖面圖 第4A圖為一側面剖面圖和β 一 。 離子:，其中上述電子搶發 離 ^，顯示一 之更ί5Λ為上4A圖* _圖中所示-^ 第6A圖為一側面2有特定加強。 為一立體圖，皆顯示=圖、第6B圖為一上視圖而第Μ圖 相同參考符號：不；】離子源。 J圖視中表不相同元件。 符號說明： 21〜22〜23〜24〜25 27〜冷卻元件， 2 9〜固態源材料， 31〜蒸發器本體， 33〜氣體注入管線， 35〜離子源汽缸體， 36〜離子源固定凸緣， 38〜電子饋通線， 40〜電性管件， 42〜離子源， 熱電偶 20〜氣體供應， 2 6〜加熱器， 28〜外部蒸發器， 30〜蒸發器本體， 32〜傳導管道， 34〜導管， 35〜離子源區塊 37〜電子饋通線， 39〜電性管件， 41〜離子源遮罩，1057-4804-PF (N) .ptd Page 14 569314 1 I · 1 · I— Simple illustration of the diagram Simple illustration of the diagram: The picture shows the general of the ions of the ion implanter Raise f. Example section. Implementation of the ion source Figure 3 is an enlarged cross-sectional view of the Lei Bu m A m ^ subgun shown in Figure 2 Figure 4A is a side cross-sectional view and β a. Ion: In which the above-mentioned electrons are sent away, ^ is displayed, and 5Λ is shown in the above 4A picture * _ shown in the figure-^ Figure 6A is a side 2 with specific enhancements. It is a three-dimensional view, all of which are shown in FIG. 6B is an upper view and FIG. M is the same reference symbol: No;] ion source. Figure J shows different components. Explanation of symbols: 21 ~ 22 ~ 23 ~ 24 ~ 25 27 ~ cooling element, 2 9 ~ solid source material, 31 ~ evaporator body, 33 ~ gas injection line, 35 ~ ion source cylinder block, 36 ~ ion source fixed flange , 38 ~ electronic feedthrough, 40 ~ electrical fittings, 42 ~ ion source, thermocouple 20 ~ gas supply, 2 6 ~ heater, 28 ~ external evaporator, 30 ~ evaporator body, 32 ~ conducting pipe, 34 ~ Duct, 35 ~ ion source block 37 ~ electron feedthrough, 39 ~ electrical fittings, 41 ~ ion source shield,

1057-4804-PF(N).ptd 第15頁 569314 圖式簡單說明 43〜分析器磁場， 44〜大量分析孔徑（細縫）’ 45〜掃目g碟， 46〜提取孔徑， 4 7〜法拉第， 4 8〜電源接頭’ 49〜離子源真空套， · [(第1圖）50〜高真空幫浦， 51〜高真空幫浦， 52〜介電絕緣套， 53〜電極， 57〜減速電極， 5 9〜絕緣套， 6 0〜示樣翻新體積]， [(第3圖）50〜圓筒外罩， 51〜電極總成， 52〜whenel t/極板網栅總成， 53〜正極圓筒， 54〜聚焦圓筒， 5 5〜出口電極總成，5 6〜出口孔徑， 58〜提取平台， 59〜非對稱EINZEL鏡片（AEL)， 60〜雙孔徑鏡片（DAL)]， 51〜熱電子電極，52’〜whenelt/柵極電極， 53’〜正極圓筒， 54’〜對焦圓筒， 55’出口圓筒， 6卜大孔徑， 7 0〜燈絲， 7卜燈絲導線， 7 2〜直流電源供應器， 73〜電子， 74〜長方形入口縫/反應室入口孔徑， 74〜離子化反應室入口孔徑， 75〜離子化反應室，75,〜離子反應室， 76〜離子提取孔徑，77〜離子提取孔徑板，1057-4804-PF (N) .ptd Page 15 569314 Brief description of the diagram 43 ~ Analyzer magnetic field, 44 ~ A lot of analysis aperture (thin slit) '45 ~ Scanning g dish, 46 ~ Extraction aperture, 4 7 ~ Faraday , 4 8 ~ Power connector '49 ~ Ion source vacuum sleeve, [(Figure 1) 50 ~ High vacuum pump, 51 ~ High vacuum pump, 52 ~ Dielectric insulation sleeve, 53 ~ electrode, 57 ~ deceleration electrode , 5 9 ~ insulation sleeve, 60 ~ sample refurbished volume], [(Figure 3) 50 ~ cylinder cover, 51 ~ electrode assembly, 52 ~ whenel t / pole grid assembly, 53 ~ positive circle Tube, 54 ~ focusing cylinder, 5 5 ~ outlet electrode assembly, 5 6 ~ outlet aperture, 58 ~ extraction platform, 59 ~ asymmetric EINZEL lens (AEL), 60 ~ double aperture lens (DAL)], 51 ~ heat Electronic electrode, 52 '~ whenelt / gate electrode, 53' ~ positive cylinder, 54 '~ focusing cylinder, 55' exit cylinder, 6b large aperture, 7 0 ~ filament, 7 b filament lead, 7 2 ~ DC power supply, 73 ~ electronic, 74 ~ rectangular inlet slit / reaction chamber inlet aperture, 74 ~ ionization reaction chamber inlet aperture, 75 ~ ionization reaction , 75, ~ ion reaction chamber, an ion extraction aperture 76~, 77~ ion extraction aperture plate,

569314 圖式簡單說明 78〜第一電極， 79〜第二電極， 80〜電子槍’ 81〜外罩’ 83〜四極鏡片， 84〜漂移區塊， 85〜長方形孔徑。569314 Brief description of the drawings 78 ~ first electrode, 79 ~ second electrode, 80 ~ electron gun '81 ~ housing' 83 ~ quadrupole lens, 84 ~ drift block, 85 ~ rectangular aperture.

1057-4804-PF(N).ptd 第17頁1057-4804-PF (N) .ptd Page 17

Claims (1)

569314 。为一 _歲正/更正/¾; P-盡號 911095Q2 條正彳 _ 六、申請專利範圍 1 · 一種離子源，用以將離子入植進入基板，該離子源 包括： 一離子化反應室，具有一氟體入口孔、一離子抽出孔 以及複數個電子入口孔； 一氣體源； 一導管，於流體内連接該氟體入口孔以及該氣體源； 複數個電子搶，設置於該等電子入口孔外部，且分別 對準遠寺電子入口孔。 2 ·如申請專利範圍第1項所述之離子源，其中該離子 化反應室以一第一對壁以及一第二對壁所形成，該第一對 壁由該等電子入口 ，定義一電孑束軸，以及一第二對必定 義一離子束軸與該電子束軸垂直，該第二對壁之其中一壁 以該氣體入口孔形成，該第二對璧之齊中另一壁以該離子 抽出孔形成。 3 ·如申請專利範圍第2項所述之離子源，其中該離子. 束軸與該電子束軸彼此垂直。 4 ·如申請專利範圍第2項所述之離子源，其中該等複 數個電子搶為兩個。 5 ·如申請專利範圍第4項所述之離子源，其中該等電 子搶同時僅能由其中之一發射〆電子束。 6·如申請專利範圍第5項所述之離子源，其中該等電 子搶同時分別發射一電子束。 7 · —種離子源，包括： 一離子化反應，用以接收〆氣體源，該離子化反應是569314. It is a _year-old positive / corrected / ¾; P-complete number 911095Q2 Article 彳 _ VI. Patent application scope 1 · An ion source for implanting ions into a substrate, the ion source includes: an ionization reaction chamber having A fluorine gas inlet hole, an ion extraction hole and a plurality of electronic inlet holes; a gas source; a conduit for connecting the fluorine gas inlet hole and the gas source in a fluid; a plurality of electronic grabbers arranged in the electronic inlet holes Outside, and respectively aligned with Yuansi electronic entrance holes. 2 · The ion source according to item 1 of the scope of patent application, wherein the ionization reaction chamber is formed by a first pair of walls and a second pair of walls, and the first pair of walls is defined by the electron inlets to define an electric The chirped beam axis and a second pair must define an ion beam axis perpendicular to the electron beam axis. One of the walls of the second pair is formed by the gas inlet hole, and the other pair of the second pair of chirps is aligned with the other wall. The ion extraction hole is formed. 3. The ion source according to item 2 of the scope of the patent application, wherein the ion beam axis and the electron beam axis are perpendicular to each other. 4 · The ion source as described in item 2 of the patent application scope, wherein the plurality of electrons are two. 5 · The ion source as described in item 4 of the scope of patent application, wherein the electrons can only emit a plutonium electron beam from one of them at the same time. 6. The ion source as described in item 5 of the scope of patent application, wherein the electrons simultaneously emit an electron beam respectively. 7 · — An ion source, including: An ionization reaction for receiving a radon gas source, the ionization reaction is 569314569314 曰 修正 包含一第一壁以一矩形電子入口缝形成，以及一大致與該 第一壁平行之第二壁以一離子抽出孔形成；以及 一燈絲，設置於鄰接該電子入口縫。 其中該燈絲 其中該燈絲 8 ·如申請專利範圍第7項所述之離子源 為帶狀物。 9 ·如申請專利範圍第7項所述之離子源 為嫣。 I 〇 ·如申請專利範圍第7項所述之離子源，其中該燈絲 被施加偏壓低於該離子化反應室之位能，以加速電子穿過 該電子入口縫。 II ·如申請專利範圍第7項所述之離子源，其更包括一 或多孔透鏡，設置於該燈絲與該離子化反應室之間。The correction includes a first wall formed by a rectangular electronic entrance slot, and a second wall substantially parallel to the first wall formed by an ion extraction hole; and a filament disposed adjacent to the electronic entrance slot. Wherein the filament Wherein the filament 8 · The ion source according to item 7 of the scope of patent application is a ribbon. 9 · The ion source described in item 7 of the scope of patent application is Yan. I o The ion source as described in item 7 of the scope of patent application, wherein the filament is biased below the potential energy of the ionization reaction chamber to accelerate electrons through the electron entrance slit. II. The ion source according to item 7 of the scope of patent application, further comprising an or porous lens disposed between the filament and the ionization reaction chamber. 1057-4804-PF2(N).ptc 第19頁1057-4804-PF2 (N) .ptc Page 19