TW567620B - Ultraviolet ray emitting element - Google Patents

Ultraviolet ray emitting element Download PDF

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Publication number
TW567620B
TW567620B TW91133333A TW91133333A TW567620B TW 567620 B TW567620 B TW 567620B TW 91133333 A TW91133333 A TW 91133333A TW 91133333 A TW91133333 A TW 91133333A TW 567620 B TW567620 B TW 567620B
Authority
TW
Taiwan
Prior art keywords
layer
light emitting
ultraviolet ray
algan
well
Prior art date
Application number
TW91133333A
Other languages
English (en)
Chinese (zh)
Other versions
TW200300300A (en
Inventor
Hiroaki Okagawa
Kazuyuki Tadatomo
Yoichiro Ouchi
Takashi Tsunekawa
Original Assignee
Mitsubishi Cable Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Ind Ltd filed Critical Mitsubishi Cable Ind Ltd
Publication of TW200300300A publication Critical patent/TW200300300A/zh
Application granted granted Critical
Publication of TW567620B publication Critical patent/TW567620B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW91133333A 2001-11-15 2002-11-14 Ultraviolet ray emitting element TW567620B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001350615 2001-11-15
JP2002073871A JP2003218396A (ja) 2001-11-15 2002-03-18 紫外線発光素子

Publications (2)

Publication Number Publication Date
TW200300300A TW200300300A (en) 2003-05-16
TW567620B true TW567620B (en) 2003-12-21

Family

ID=26624542

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91133333A TW567620B (en) 2001-11-15 2002-11-14 Ultraviolet ray emitting element

Country Status (5)

Country Link
JP (1) JP2003218396A (ko)
KR (1) KR100709058B1 (ko)
CN (1) CN100355094C (ko)
TW (1) TW567620B (ko)
WO (1) WO2003043097A1 (ko)

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US8134168B2 (en) 2003-10-14 2012-03-13 Showa Denko K.K. Group-III nitride semiconductor device
JP2006100475A (ja) * 2004-09-29 2006-04-13 Toyoda Gosei Co Ltd 半導体発光素子
CN100334739C (zh) * 2005-04-27 2007-08-29 中国科学院上海技术物理研究所 紫外双波段氮化镓探测器
JP2007042944A (ja) * 2005-08-04 2007-02-15 Rohm Co Ltd 窒化物半導体素子の製法
JP2009510763A (ja) * 2005-09-30 2009-03-12 ソウル オプト デバイス カンパニー リミテッド 発光ダイオード
JP2008124060A (ja) 2006-11-08 2008-05-29 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
JP5151139B2 (ja) * 2006-12-19 2013-02-27 住友電気工業株式会社 半導体発光素子
JP2008177525A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008198705A (ja) * 2007-02-09 2008-08-28 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
KR101364169B1 (ko) * 2007-03-30 2014-02-17 서울바이오시스 주식회사 초격자 구조의 장벽층을 갖는 근자외선 발광 다이오드
EP1976031A3 (en) 2007-03-29 2010-09-08 Seoul Opto Device Co., Ltd. Light emitting diode having well and/or barrier layers with superlattice structure
WO2009021206A1 (en) * 2007-08-08 2009-02-12 The Regents Of The University Of California Nonpolar iii-nitride light emitting diodes with long wavelength emission
KR100877774B1 (ko) 2007-09-10 2009-01-16 서울옵토디바이스주식회사 개선된 구조의 발광다이오드
CN102136533A (zh) * 2008-01-24 2011-07-27 晶元光电股份有限公司 发光元件的制造方法
TWI466314B (zh) * 2008-03-05 2014-12-21 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體
KR101017396B1 (ko) * 2008-08-20 2011-02-28 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드
JP5671244B2 (ja) 2010-03-08 2015-02-18 日亜化学工業株式会社 窒化物系半導体発光素子
KR101990095B1 (ko) * 2011-07-11 2019-06-18 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101262725B1 (ko) 2011-08-08 2013-05-09 일진엘이디(주) 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법
EP2618388B1 (en) * 2012-01-20 2019-10-02 OSRAM Opto Semiconductors GmbH Light-emitting diode chip
US20150084058A1 (en) * 2012-03-19 2015-03-26 Koninklijke Philips N.V. Light emitting device grown on a silicon substrate
KR101983775B1 (ko) * 2012-10-25 2019-09-03 엘지이노텍 주식회사 발광소자
KR102019751B1 (ko) * 2013-01-29 2019-09-09 엘지이노텍 주식회사 발광소자
JP2014154840A (ja) * 2013-02-13 2014-08-25 Mitsubishi Chemicals Corp ｍ面窒化物系発光ダイオードの製造方法
CN104157754B (zh) * 2014-07-03 2017-01-11 华南理工大学 生长在W衬底上的InGaN/GaN多量子阱及其制备方法
CN104518059A (zh) * 2014-11-06 2015-04-15 聚灿光电科技(苏州)有限公司 基于GaN基量子阱的外延结构及其生长方法
KR101803929B1 (ko) 2016-03-10 2018-01-11 주식회사 소프트에피 근자외선 발광 반도체 발광소자 및 이에 사용되는 3족 질화물 반도체 템플릿
US11158995B2 (en) * 2018-06-01 2021-10-26 Visual Photonics Epitaxy Co., Ltd. Laser diode with defect blocking layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111558A (ja) * 1994-10-07 1996-04-30 Hitachi Ltd 半導体レーザ素子
JPH0936423A (ja) * 1995-07-24 1997-02-07 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
EP0732754B1 (en) * 1995-03-17 2007-10-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
JP3778609B2 (ja) * 1996-04-26 2006-05-24 三洋電機株式会社 半導体素子の製造方法
JP3471685B2 (ja) * 1999-03-17 2003-12-02 三菱電線工業株式会社 半導体基材及びその製造方法
JP3460641B2 (ja) * 1999-09-28 2003-10-27 日亜化学工業株式会社 窒化物半導体素子
JP4501194B2 (ja) * 1999-12-08 2010-07-14 日亜化学工業株式会社 窒化物半導体発光素子

Also Published As

Publication number Publication date
TW200300300A (en) 2003-05-16
CN100355094C (zh) 2007-12-12
CN1586015A (zh) 2005-02-23
JP2003218396A (ja) 2003-07-31
WO2003043097A1 (fr) 2003-05-22
KR100709058B1 (ko) 2007-04-18
KR20040062636A (ko) 2004-07-07

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