TW565924B - Substrate heat treatment apparatus and manufacturing method of flat device - Google Patents
Substrate heat treatment apparatus and manufacturing method of flat device Download PDFInfo
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- TW565924B TW565924B TW091119783A TW91119783A TW565924B TW 565924 B TW565924 B TW 565924B TW 091119783 A TW091119783 A TW 091119783A TW 91119783 A TW91119783 A TW 91119783A TW 565924 B TW565924 B TW 565924B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 162
- 239000000758 substrate Substances 0.000 title claims abstract description 151
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000007789 gas Substances 0.000 claims description 68
- 239000000112 cooling gas Substances 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 239000008267 milk Substances 0.000 claims 1
- 210000004080 milk Anatomy 0.000 claims 1
- 235000013336 milk Nutrition 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 230000003028 elevating effect Effects 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
Abstract
Description
565924565924
565924 五、發明說明（2) 射的Λ f :、’於上述熱處理步驟巾，於採用使用燈之光照 用萨J : 4法之情況’可更高速進行熱處理。'然而，於應 ^由，的刺激之物理現象的情;兄，欲均—地維持溫度有 :難道例如，會受到形成於基板上之裝置的狀態等之影 ‘ ：ΪΪί板上的溫度變成不均-。尤其是玻璃基板的情 «不1 & ;形成於玻璃基板上之圖案的狀態（例如，圖案565924 V. Description of the invention (2) In the case of the heat treatment step described above, Λ f:, ′ can be heat-treated at a higher speed in the case of using the light using a lamp and the method of J 4. 'However, the stimulus of the physical phenomena of Yu Ying; the desire to maintain the temperature uniformly and uniformly: for example, will it be affected by the state of the device formed on the substrate?': The temperature on the plate becomes Uneven-. Especially the case of glass substrates «No 1 &; The state of a pattern formed on a glass substrate (for example, a pattern
:2i?、可否讓光透過、吸收、反射者等之因素)而 增大的可^份的溫度發生變A ’而有導致基板内的溫度差 i γ此。因於廷樣的溫度不均一，會使基板發生反翹 或變形，容易導致對元件發生損害之狀況。 反J - Π:Γ1的I在提供可進行高速處理，且可對基板均 地進订加熱之基板熱處理裝置。 !一以解決譯題之手种 2明之基板熱處理裝置’其特 二 =”之製程室(2)，設置於前述製程室⑺肴上部用： 爐（3)，經由加熱爐（3)進行加熱之加熱用配 =前述加熱用配管⑷之時，使經加熱之加熱“ 程室内的基板⑴表面之擴散裂置a 可使則述基板（1 )在透過前述擴散裝置（2 !等） 上；：ί : L嘴吹前述加熱用氣體之上部位置及較前述 板升降裝置（7)。 』砂助之基 依據此基板熱處理裝置，由於可 熱用氣體以對基板進行加熱，故可對基板= 第5頁 C:\2D-CODE\9Ml\91119783.ptd 565924 五、發明說明（3) 仃加熱。且，加熱用配管，亦可 的設置’此情$兄，可設置成可；、:：數的區帶作複數 行加熱之複數的加熱爐。而且二灵數的加熱用配管進 可。 使各加熱爐可獨立控制亦 加熱用配管（4 )使用加熱爐（3 ) 形成亦可。 斤加熱之區域作成屈曲而 此情況中，由於使用加熱煻Γ 配管之長度可加大，故可使力^埶 ϋ…之區域的加熱用 擴散裝置（21等），亦可為：^ 1有，率^昇溫。 配：之加熱用氣體的空間(26);和用以=:力;熱用 上部位置之基板（1 )之間的複數之路經；並^* 0 與^在 體由空間(26)通過路徑而使加熱用氣體擴散曰。°'、、、用氣 於:’由於係自空間通過路 ;體；Γί板Γ地昇溫。又，複數的路徑以使力二 又，作為擴散裝置’亦可使用開孔板。 為佳 力口熱爐（3)於對加熱用配管（4)進行加熱之同時，亦可 在上部位置之基板（1 )作直接的加熱。 、 =t情，中，藉由加熱用氣體之昇溫效果及藉由加熱爐 直接的昇溫效果，可使基板以更高速進行昇溫。 亦可具備·用以在藉由基板升降機（7)使基板（1)自上部 位置往下部位置移動之間，供給冷卻氣體到製程室（2)内 之冷卻氣體供給裝置（a )。 於此情況中，於使基板自上部位置往下部位置移動之: 2i ?, whether the light can be transmitted, absorbed, reflected, etc.) and the temperature of the part that can be increased becomes A ', which causes the temperature difference i γ in the substrate. Due to the uneven temperature, the substrate may be warped or deformed, which may easily cause damage to the device. The reverse J-Π: Γ1 I provides a substrate heat treatment device capable of high-speed processing and uniformly heating substrates. The first is to solve the problem of the 2 kinds of substrate heat treatment device 'its special ==' process chamber (2), which is installed in the upper part of the aforementioned process chamber: furnace (3), heating through heating furnace (3) When the heating fitting = the aforementioned heating pipe ⑷, the heated heating "diffusion crack a on the surface of the substrate ⑴ in the process chamber can make the substrate (1) pass through the aforementioned diffusion device (2 !, etc.); : Ί: L blows the upper position of the heating gas and the lifting device (7) above the plate. "Sakusuke's base is based on this substrate heat treatment device. Since gas can be used to heat the substrate, it is possible to heat the substrate = page 5 C: \ 2D-CODE \ 9Ml \ 91119783.ptd 565924 5. Description of the invention (3)仃 Heating. In addition, the heating piping can also be provided. In this case, it can be set to be possible; and :: The numbered zones are used as a plurality of heating furnaces for heating in a plurality of rows. In addition, piping for heating of two spirit numbers is available. Each heating furnace can be controlled independently or the heating piping (4) can be formed by using the heating furnace (3). The area heated by jin is buckled. In this case, since the length of the heating pipe can be increased, the heating diffusion device (21, etc.) in the area of force ^ 可使 can also be: ^ 1 Yes , Rate ^ warming. With: the space (26) for the heating gas; and the plural paths between the substrate (1) at the upper position for heating; and ^ * 0 and ^ pass through the body space (26) Path to diffuse the heating gas. ° ',,, gas for:' Because the system passes through the road from space; Γί 板 Γ warms up. Further, a plurality of paths may be used to make the force two, and a perforated plate may be used as the diffusion device '. The Jialikou furnace (3) can also directly heat the substrate (1) at the upper position while heating the heating pipe (4). In the case of t, the temperature of the substrate can be increased at a higher speed by the effect of increasing the temperature of the heating gas and by the effect of increasing the temperature directly by the heating furnace. A cooling gas supply device (a) for supplying cooling gas to the process chamber (2) between the substrate (1) and the lower position by the substrate lifter (7) may be provided. In this case, when the substrate is moved from the upper position to the lower position,
C:\2D.CODE\9l-n\9iH9783.ptd 第6頁 565924 五、發明說明（4) 間，可經由冷卻氣體使基板高速且均一地進行冷卻。 其ϋ月夕之制平板裝置的製造方法，係使用具備：用以容納 广板.（_)衣程室（2);設置於製程室（2)上部之加熱爐 3 ，、左由加熱爐（3 )進行加熱之加熱用配管（4 )二& 力之時，使經加熱之加熱用氣體喷二 板表面之擴散裝置(21等）；及可使基板 (1)在透 < 擴放裝置（21等）對基板（1) 部位：及較上部位置低之製程室⑴内”位用-二 動之基板升降裝置⑺，之基板熱處理裝置 於，係含有使在上部位置之基板⑴經氣 加熱之步驟。 …用乱骽進仃 依據此平板裝置之製造方&，由於可透過 力:力熱：氣板進行加熱，故可對基板高速且ϋΐ 灯加熱。又，作為擴散裝置， 也退 :::成：：對應於複數的區帶作複“反：：情：熱 可设置成可分別對複數的加執用 [月此 熱爐。而1 ’使各加熱爐可獨立控：；。口…、之稷數的加 形：：：配管(4)使用加熱爐(3)所加熱之區域作成屈曲而 此情況中，由於使用加熱愫Γ 配管之長度可加大，故可使力^埶加熱之區域的加熱用 擴散裝置（2 1等），亦可為·· ^氣體有效率地昇溫。 配管（4)之加熱用氣體的空間（26 ，接納來自前述加熱用 與在上部位置之基板（1)之間 ^和用以連通空間（26 ) Ί的设數之路徑；並藉由加熱C: \ 2D.CODE \ 9l-n \ 9iH9783.ptd Page 6 565924 5. Description of the invention (4), the substrate can be cooled at a high speed and uniformly by a cooling gas. The manufacturing method of the flat-panel device made on the eve of the moon is provided with: to accommodate a wide board. (_) Clothing process room (2); a heating furnace 3 provided on the upper part of the processing room (2), and a left-hand heating furnace (3) A diffusing device (21, etc.) for spraying the heated heating gas on the surface of the second plate when the heating piping (4) second & Placement device (21, etc.) on the substrate (1): In the process chamber 较 lower than the upper position, the two-moving substrate lifting device ⑺, the substrate heat treatment device contains the substrate 使 in the upper position. The step of heating by gas.… Using chaos into the plate according to the manufacturer of this flat device & because the permeable force: force heat: gas plate is used for heating, the substrate can be heated at high speed and the lamp is heated. Also, as a diffusion device , Also back ::: 成 :: The zone corresponding to the plural is made "inverse :: sentiment: heat can be set to perform the addition of the plural [month this hot furnace. And 1 'enables each heating furnace to be controlled independently:;. Addition of the number of mouths ... :: The piping (4) is buckled using the area heated by the heating furnace (3). In this case, since the length of the piping can be increased by using the heating 愫 Γ, the force can be increased ^扩散 The heating diffusion device (21, etc.) can also heat the gas efficiently. The space (26) for heating gas of the piping (4) receives the path between the aforementioned heating and the substrate (1) at the upper position ^ and a set path for communicating the space (26) Ί; and by heating
C:\2D-C0DE\91-11\91119783.ptd 第7頁 565924C: \ 2D-C0DE \ 91-11 \ 91119783.ptd Page 7 565924
用氣體由空間（26)通過路徑而使 用氣 加熱用 為佳。 亦可對 體於板：於…間通過路徑而it熱 體故可使基板均一地昇溫。又，複數的路徑以使 亂胆可均一地喷吹到基板的表面全體的方式而形成 加熱爐（3)於對加熱用配管（4)進行加熱之同 在上部位置之基板（1 )作直接的加熱。 之效藉“熱爐 亦可包含：用以在藉由基板升降機（7)使基板（丨）自上部 位置往下部位置移動之間，供給冷卻氣體到製程室（2)内° 之冷卻步驟。 於此情況中，於使基板自上部位置往下部位置移動之 間’可經由冷卻氣體使基板向速且均一地進行冷卻。 又’為使本發明容易理解’將附圖的參照符號加括弧附 記，惟，本發明並不因而受限於圖示之形態中。 發明之實施形態 以下，參照圖1〜圖3，就本發明之基板熱處理裝置的實 施形態加以說明。此基板熱處理裝置，可用於例如平板裝 置的基板之熱處理，惟，基板並非限定於此。 圖1為本實施形態之基板熱處理裝置的剖視圖；圖2為顯 示自圖1的I I - I I線方向來看之加熱用配管的形狀之圖；圖 3為顯示其他的加熱用配管的形狀之圖。 如圖1及圖2所示般，本實施形態之基板熱處理裝置 (1 0 0 )，具備有：用以容納基板（1)之製程室（2 )，設置於It is better to use gas to pass the space (26) through the path for heating. It can also be opposed to the board: it passes the path between and it heats up so that the substrate can be uniformly heated. In addition, a plurality of paths form a heating furnace (3) so that the substrate can be sprayed uniformly on the entire surface of the substrate. The heating furnace (3) directly heats the heating pipe (4) as well as the substrate (1) at the upper position. Of heating. The effect can also include: a cooling step for supplying a cooling gas to the inside of the process chamber (2) between the movement of the substrate (丨) from the upper position to the lower position by a substrate lifter (7). In this case, between moving the substrate from the upper position to the lower position, the substrate can be cooled uniformly at a high speed through a cooling gas. Also, to make the present invention easier to understand, the reference signs in the drawings are enclosed in parentheses. However, the present invention is not limited to the form shown in the drawings. Embodiments of the Invention Hereinafter, an embodiment of the substrate heat treatment apparatus of the present invention will be described with reference to FIGS. 1 to 3. This substrate heat treatment apparatus can be used for For example, the heat treatment of the substrate of a flat plate device is not limited thereto. Fig. 1 is a cross-sectional view of the substrate heat treatment device of this embodiment; Fig. 2 is a diagram showing the shape of a heating pipe viewed from the direction of line II-II in Fig. 1 Fig. 3 is a diagram showing the shapes of other heating pipes. As shown in Figs. 1 and 2, the substrate heat treatment apparatus (100) of this embodiment is provided with: Kea plate (1) of the process chamber (2), is provided in
565924 五、發明說明（6) 製程室（2)上部之加熱爐（3)， 英製之加熱用配管（4 )，設置於制。^製程室（2 )上部之石 加熱爐（5 )，將製程室（2 )自下方& \至（2 )内部之環狀預備 使基板（1)於製程室（2)的内部以撐之凸緣（6)，與用以 機（7 )。 上下方向移動之基板升降 於製程室（2)與凸緣（6)之間， 士 或四氟乙烯等之密封材，藉此，。；1裝設有未圖示之0-環 (6 )之間的氣密性。 可保持製程室（2 )與凸緣 如圖1所示般，製程室（2 )的内 — (路徑）之開孔板（2 1 )，區隔成° ’藉由形成有多數的孔 程室（2)的側壁，分別設置有/ ^上下方向。又，於製 製程室（2)内的氣體排氣之氣;f板進出之門（22)、供 在製程室（2)内使基板（1)冷卻 ϋ (23)及（24)、用以 氣體導入口（25)。又，圖1中，—入々卻用氣體之冷卻用 移動之製程室（2)之開放之狀能^ :經由門（22)之左右 態。 〜與保持著氣密之關閉狀 環狀的預備加熱爐（5)，係由 a ^ l ^ , N 你由石央製的外殼（5a)所包圍 以防止製程室（2 )内的污染。 ‘ 匕固 加熱爐（3 )係以保持製程宮「9、 上二至（2)内的氣密性的方式裝置於 ". 。^圖所不般，加熱爐（3)具備有：覆蓋製 私至（2)的開口之爐體（3a)、與裝設於爐體（3&)的内面側 之=熱器（3b)。加熱器（3b)係由電阻體所構成，經由對電 阻體施加電壓可對加熱器（3“進行加熱。為了能夠防止起 因於加熱器（3b)之製程室（2)内部的污染，及可對基板（1)565924 V. Description of the invention (6) The heating furnace (3) on the upper part of the process chamber (2) and the British-made heating piping (4) are installed in the system. ^ The stone heating furnace (5) in the upper part of the process chamber (2) will prepare the substrate (1) inside the process chamber (2) to support the ring in the process chamber (2) from below & (2). Flange (6), and machine (7). The substrate moving up and down is lifted between the process chamber (2) and the flange (6) by a sealing material such as taxi or tetrafluoroethylene. ; 1 is provided with airtightness between 0-rings (6) (not shown). It can keep the process chamber (2) and the flange as shown in Figure 1. The inside of the process chamber (2) —the opening plate (2 1) of the path, is separated by ° '. The side walls of the chamber (2) are respectively provided with a vertical direction. In addition, the gas exhaust gas in the manufacturing process chamber (2); the f-plate entry and exit door (22), for cooling the substrate (1) in the manufacturing chamber (2) (23) and (24), Take the gas inlet (25). In addition, in FIG. 1, the state of opening of the process chamber (2), which is moved by gas cooling, but used for cooling, is ^: left and right through the door (22). ~ Closed ring-shaped preheating furnace (5), which is kept airtight, is surrounded by a ^ l ^, N You are surrounded by a shell (5a) made by Shi Yang to prevent contamination in the process chamber (2). The dagger heating furnace (3) is installed in ". in order to maintain the airtightness in the process palace "9, upper two to (2). ^ As shown in the figure, the heating furnace (3) is equipped with: covering The open furnace body (3a) made to (2) and the heater (3b) installed on the inner side of the furnace body (3 &). The heater (3b) is composed of a resistor body and The heater (3 "can be heated by applying a voltage to the resistor. In order to prevent contamination inside the process chamber (2) caused by the heater (3b), and to prevent damage to the substrate (1),
565924565924
五、發明說明（7) 均一地進行加熱，於加熱爐（3)的内面側，裝置有、 爐（3)的内面被覆有加熱器（3b)之半透明或^祐秘，加熱 英製外殼（31)。 θ $ 如圖1所示般，基板升降機（7)，係於與製程室（2), 者氣松性之下裝设於凸緣（6 )上。基板升降機（7 )呈、· 備加熱爐（5)與形成於外殼（5a)的中央之貫穿開口/部6、\择 71、用以使臂71依圖1中之上下方向驅動之促動器72 ^ f 裝設於臂71的上端部之用以支撐基板（1)的石英^或碳制 的基板載置器（73)。基板載置器（73)係在支撐為水平之適 當大小的石英製的板（73a)上溶接以石英製的插梢（73b) ^ 構造。基板（1 )係抵住插梢（73b)而載持著。基板載置哭 (7 3 )的大小，係依於基板（1 )的尺寸與製程室（2 )的内側之 水平截面的大小而決定，並具有調整排氣的傳導 (conductance)的作用 〇 如圖1所示般，於開孔板（21 )的上方，形成有在開孔板 (2 1 )與製程室（2 )的内壁面之間的既定的間隙之空間 (2 6 )。此空間（2 6 )的間隙（圖1之上下方向的寬度）係設定 為例如1 2mm程度。間隙的大小以1 〇〜1 5mm程度為佳。 如圖1及圖2所示般，於製程室（2 )的上面，形成有複雜 地屈曲的加熱用配管（4)。於分別加熱用配管（4 )的一端設 置有加熱氣體排出口（ 4a )，於另一端則設置有加熱氣體導 入口（4b)。如圖1所示般，加熱氣體導入口（4b)係貫穿著 加熱爐（3 )。又，加熱氣體排出口 （ 4a )係貫穿著製程 室（2)的間隔壁，於開孔板（2 1 )與製程室（2 )的内壁面V. Description of the invention (7) Uniform heating. The inner side of the heating furnace (3) is equipped with a semi-transparent or sacred cover coated with a heater (3b) on the inner surface of the furnace (3). (31). θ $ As shown in FIG. 1, the substrate lifter (7) is attached to the flange (6) under the air-looseness of the process chamber (2). The substrate lifter (7) is provided with a heating furnace (5) and a through opening / section 6, which is formed in the center of the casing (5a). The substrate 72 (f) is a quartz substrate or a substrate holder (73) made of carbon and attached to the upper end of the arm 71 for supporting the substrate (1). The substrate holder (73) has a structure made of a quartz pin (73b) fused to a quartz plate (73a) of an appropriate size supported horizontally. The substrate (1) is carried against the pin (73b). The size of the substrate mounting cry (7 3) is determined by the size of the substrate (1) and the horizontal cross-section of the inside of the process chamber (2), and has the effect of adjusting the conductance of the exhaust gas. As shown in FIG. 1, a space (2 6) having a predetermined gap between the perforated plate (2 1) and the inner wall surface of the process chamber (2) is formed above the perforated plate (21). The gap (the width in the up-down direction in FIG. 1) of this space (2 6) is set to, for example, about 12 mm. The size of the gap is preferably about 10 to 15 mm. As shown in Figs. 1 and 2, a heating pipe (4) is formed on the upper surface of the process chamber (2), which is complicatedly buckled. A heating gas discharge port (4a) is provided at one end of each of the heating pipes (4), and a heating gas introduction port (4b) is provided at the other end. As shown in Fig. 1, the heating gas introduction port (4b) penetrates the heating furnace (3). In addition, the heating gas discharge port (4a) is a partition wall that penetrates the process chamber (2), and is on the inner wall surface of the perforated plate (2 1) and the process chamber (2).
565924565924
五、發明說明（8) 之間的空間（26)處開口著。並且，用以導入使基板（1)A 卻之氣體的降溫用氣體導入口（9)，係貫穿著加熱爐（3)7及 製程室（2 )的間隔壁而於空間（2 6 )處開口著。 ”| 如圖2所示般，由於氣體排出口（ 4a)係開口於製程室（2 ) 白勺中央附近’故在空間（26)的中央附近的氣體'壓增 高，致中央附近的氣體喷處量易於變大。因此之故7由 使開孔板（2 1 )的孔徑於中央附近作成較小，於周邊部分作 成較大，可使加熱用氣體的吹出量於基板全體成為^二。 又’孔徑形成為一定的大小’而孔的密集度（單位面=積的 孔數）於製程室（2)的周邊部分作成為較大亦可。 > 又，作為孔徑，以0· 5〜1mm程度為佳。 其次’就使用基板熱處理裝置（100)之基板的加熱處理 的順序加以說明。 首先，打開製程室（2)的門（22)，將基板（1)安置於基板 載置器（7 3 )上。此時，由降溫用氣體導入口（ 9 )將氣體&導 入（氣體流量：80〜100升/分），於將基板（1)安置妥♦ 後，關閉門（2 2 )。此時，基板（1 )係在升降機（7 )的驅動範 圍之最低點之製程室（2)内的低溫部。圖1係顯示此時的基 板（1)的位置。 土 然後’在自降溫用氣體導入口（ 9 )通以氣體之狀態下， 進行預備加熱。預備加熱係經由加熱爐（3)的加熱器（3b) 二與預備加熱爐（5)的加熱器來進行。至預備加熱^成之 前，須使加熱器（3b)的溫度上升到設定溫度（例如8〇〇V. Description of the invention (8) The space (26) is open. In addition, a temperature-reducing gas introduction port (9) for introducing a gas that cools the substrate (1) A is inserted into the space (2 6) through the partition wall of the heating furnace (3) 7 and the process chamber (2). Open up. "| As shown in FIG. 2, since the gas exhaust port (4a) is opened near the center of the process chamber (2), the pressure of the gas near the center of the space (26) increases, causing a gas spray near the center. The amount of treatment is easy to increase. Therefore, the diameter of the opening plate (2 1) is made smaller near the center and larger at the peripheral portion, so that the amount of heating gas blowout can be reduced to the entire substrate. Also, "the pore diameter is formed to a certain size", and the density of the pores (unit surface = the number of pores in the product) may be made larger in the peripheral portion of the process chamber (2). ≫ As the pore diameter, 0.5 is used. A thickness of ~ 1mm is preferred. Next, the sequence of substrate heat treatment using the substrate heat treatment apparatus (100) will be described. First, the door (22) of the process chamber (2) is opened, and the substrate (1) is placed on the substrate. (7 3). At this time, the gas & is introduced through the gas introduction port (9) for cooling (gas flow rate: 80 ~ 100 liters / minute), and after the substrate (1) is installed, the door is closed ( 2 2). At this time, the base plate (1) is at the lowest point of the driving range of the elevator (7). The low-temperature part in the process chamber (2). Figure 1 shows the position of the substrate (1) at this time. The soil is then pre-heated with the gas introduced from the gas introduction port (9) for cooling. Pre-heating It is performed by the heater (3b) of the heating furnace (3) and the heater of the pre-heating furnace (5). Before the pre-heating is completed, the temperature of the heater (3b) must be raised to a set temperature (for example, 8 〇〇
565924 發明說明（9) "~" ' ---- 預備加熱完了後，驅動升降機（7)的臂71，將載置於基 板載置器（73)上之基板（1)移動到最高點之加熱位置。二 圖1中圖示有此時的基板（丨）的位置。於使基板（丨）上昇之 2 ’使降溫用氣體的流量減少，使透過加熱用配管（4)供 給之加熱用氣體的流量增加，使基板（丨）進行昇溫。此作 業’係於基板（1 )自最低點往最高點移動之間進行。 上基板（1 )於到達最高點後，停止降溫用氣體之導入，只 讓加熱氣體透過加熱用配管（4)導入（氣體流量：2〇升/分 〜5 0升/分）。再度將加熱爐（3 )的溫度再設定，經由加熱 爐（3。）的加熱器（3b)之控制，使基板（1)於既定溫度（例如 720 =)進行一定時間的加熱。當加熱氣體通過加熱用配管 (4 )日$ 加熱氣體藉由加熱爐（3 )加熱。供給到空間（2 6 )之 加熱氣體’於通過開孔板（2 1 )的孔之時被分散之後，對基 板（1)全體，沿著基板（丨）的表面流經過，藉此可對基板 (1)均一地加熱。其後，使氣體通過基板（丨）與製程室（2) 之間，透過排氣口（ 2 3 )及（2 4)進行排氣。 如此般’於使基板（丨）接近開孔板（2丨）的狀態下，經由 透，開孔板（2 1 )供給加熱用氣體，可在基板（丨）的表面進 行氣體的攪拌，使基板表面的溫度均一，並且可在既定的 時間中保持溫度於一定。 又，此時，基板（1)亦可藉由加熱爐（3)的熱進行直接地 加熱。且，製程室（2 )，為了使來自加熱爐（3)所照射的光 之影響控制於最小限度並使光分散，係由不透明乃至霧面 玻璃狀的石英所構成。565924 Description of the invention (9) " ~ " '---- After the preliminary heating is completed, the arm 71 of the lifter (7) is driven to move the substrate (1) placed on the substrate carrier (73) to the highest position. Spot heating position. The position of the substrate (丨) at this time is illustrated in FIG. 1. 2 'for raising the substrate (丨) reduces the flow rate of the cooling gas, increases the flow rate of the heating gas supplied through the heating pipe (4), and raises the temperature of the substrate (丨). This operation is performed between the movement of the substrate (1) from the lowest point to the highest point. After the upper substrate (1) reaches the highest point, the introduction of the cooling gas is stopped, and only the heating gas is introduced through the heating pipe (4) (gas flow rate: 20 liters / minute to 50 liters / minute). The temperature of the heating furnace (3) is reset again, and the heater (3b) of the heating furnace (3.) is controlled to heat the substrate (1) at a predetermined temperature (for example, 720 =) for a certain period of time. When the heating gas passes through the heating pipe (4), the heating gas is heated by the heating furnace (3). The heated gas' supplied to the space (2 6) is dispersed while passing through the holes of the perforated plate (2 1), and then flows over the entire substrate (1) along the surface of the substrate (丨). The substrate (1) is uniformly heated. Thereafter, the gas is passed between the substrate (丨) and the process chamber (2), and exhausted through the exhaust ports (2 3) and (2 4). In this way, in a state where the substrate (丨) is brought close to the perforated plate (2 丨), the heating gas is supplied through the perforated plate (2 1), and the gas can be stirred on the surface of the substrate (丨), so that The temperature on the substrate surface is uniform, and the temperature can be kept constant for a predetermined time. In this case, the substrate (1) may be directly heated by the heat of the heating furnace (3). In addition, the process chamber (2) is composed of opaque or matte glass-like quartz in order to minimize the influence of the light irradiated from the heating furnace (3) and disperse the light.
C:\2D-CODE\91-ll\91119783.ptd 第12頁 565924 五、發明說明（ίο) 如上述般’基板（1 )，藉由加熱爐（3)的熱、加熱氣體的 能量傳遞、熱傳導，可更高速且均一地加熱。 接著’驅動升降機（7 )的臂71，使載置於基板載置器 (73 )的基板（1 )自最高點緩緩地降下到最低點，並同時使 基板（1 )的全體均一地降溫。此時，於調整加熱爐（3)的加 熱器（3b)之設定與功率之同時，使加熱用氣體的流量減 低，而使自降溫用氣體導入口（9)導入之降溫用氣體的流 量增加。進行此作業直到基板（1)到達最低點為止。此 時，。經由對降溫用氣體的溫度作適當地設定（例如4〇〇〜 5 0 0 °C)，可使基板（1)内的溫度在沒有太大的差異之下使 基板（1)高速地降溫。為了不損害到基板（〇而進行降溫， 必須對降溫用氣體的流量與經由升降機（7)之基板（丨）的下 降速度作適當的調整。尤其是基板（〇為玻璃基板的情況 中，若於高溫時基板（1)内有大的溫度差，則會有發生反 翹、、變形二或裂痕之顧慮。因而，於抑制基板⑴内的溫 度差之下高速地使溫度降低，在高溫熱處理的步驟中是不 可或缺的要素。依據本實施形態的裝置，由於在降溫時， 使降溫/用氣體均等地吹送，使氣體攪拌之同時，可使基板 (1)緩緩自熱源遠離，故可因應這樣的需求。 土 =基板（1)到達最低點時’同時將降溫用氣體及加執用 氧體的供給停止，自冷卻用氣體導入口（25)導入氣體…， 基板冷卻。藉此，可在基板（1)载置於基板置哭 ，狀態下冷卻至可經由機器人搬移的溫度，：） ⑴的加熱n(3bk功率亦可作成為〇。於溫 565924 五、發明說明（11) ，將基板（1 )取出。 依序進行基板（1)的加 降到設定溫度之後，打開門（2 2) 經由反覆進行上述的循環，可 熱0 於本實施形態中，由於最初基板 可在此位置使基板（1)加熱到一$、西# f ^疋於敢低”，，占 的昇溫所會造成之對基板的損害^度’故可防止因急遽 圖3 示用其他的加熱用配管代替本實施形態之加熱 用配管（4 )。 如上述般，於本發明之基板熱處理裝置，可對基板全體 均一地進行昇溫、降溫。然而，此溫度均一性，易隨著基 板尺寸的增大而變差。實務上，亦有著邊長為丨米以上之 長度的基板出現’於大型基板，在基板的中央部與周邊部 容易發生溫度差。 ~ 如圖3所示般，此加熱用配管（4 A )中，係將製程室（2 )内 部於水平面内分割成5個區間Z1〜Z5。各區間Z1〜Z5中， 分別設有複雜地屈曲之配管4 1〜4 5。於配管4 1〜4 5，分別 設置有與加熱氣體排出口（ 4a)同樣的加熱氣體排出口 4 J a 〜45a、和與加熱氣體導入口（4b)同樣的加熱氣體導入口 41b〜4 5b，加熱氣體排出口 41a〜45a分別開口於圖工所示 之空間（2 6 )處。 又，加熱爐（3 )的加熱器，係分割成對應於各區間z丨〜 Z 5之區域，並且各區間Z1〜Z 5可分別獨立地加以控制。藉 此，排出至各區間Z1〜Z 5之加熱用氣體的溫度可分別作適 當的控制。C: \ 2D-CODE \ 91-ll \ 91119783.ptd Page 12 565924 V. Description of the invention (ίο) As described above, the substrate (1), through the heat of the heating furnace (3), the energy transfer of the heated gas, Heat conduction for higher speed and uniform heating. Next, the arm 71 of the lifter (7) is driven to gradually lower the substrate (1) placed on the substrate carrier (73) from the highest point to the lowest point, and at the same time, the entire substrate (1) is cooled uniformly. . At this time, while adjusting the setting and power of the heater (3b) of the heating furnace (3), the flow rate of the heating gas is reduced, and the flow rate of the cooling gas introduced from the cooling gas introduction port (9) is increased. . This operation is performed until the substrate (1) reaches the lowest point. at this time,. By appropriately setting the temperature of the temperature-reducing gas (for example, 400 to 500 ° C), the temperature in the substrate (1) can be cooled at a high speed without much difference. In order to reduce the temperature without damaging the substrate (0), the flow rate of the gas for cooling and the descending speed of the substrate (丨) passing through the elevator (7) must be appropriately adjusted. Especially in the case where the substrate (0 is a glass substrate, if When there is a large temperature difference in the substrate (1) at high temperature, there is a concern that reverse warping, deformation, or cracks may occur. Therefore, the temperature is reduced at a high speed while suppressing the temperature difference in the substrate ⑴, and the heat treatment is performed at high temperature. The step is an indispensable element. According to the device of this embodiment, when the temperature is lowered, the temperature is lowered and the gas is blown evenly, while the gas is stirred, the substrate (1) can be gradually away from the heat source. It can respond to such needs. When soil = substrate (1) reaches the lowest point, the supply of temperature-reducing gas and processing oxygen gas is stopped at the same time, and the gas is introduced from the cooling gas introduction port (25), and the substrate is cooled. , Can be placed on the substrate (1) on the substrate and cry, and cooled to a temperature that can be moved by the robot in the state :) ⑴ heating n (3bk power can also be made into 0. Yu Wen 565924 5. Description of the invention ( 11) Take out the substrate (1). After the substrate (1) is added and lowered to the set temperature in sequence, the door (2) is opened and the above cycle is repeated. It can be heated in this embodiment. At this position, the substrate (1) can be heated to one dollar, west # f ^ dare to be low ", the damage to the substrate will be caused by the temperature increase of the account, so it can prevent the other The heating piping replaces the heating piping (4) of this embodiment. As described above, in the substrate heat treatment apparatus of the present invention, the entire substrate can be uniformly heated and cooled. However, this temperature uniformity is easy to follow the substrate size. In practice, substrates with a side length of 丨 meters or more appear on large substrates, and the temperature difference between the central part and the peripheral part of the substrate is prone to occur. ~ As shown in Figure 3, this In the heating piping (4 A), the inside of the process chamber (2) is divided into five sections Z1 to Z5 in a horizontal plane. Each section Z1 to Z5 is provided with complicatedly bent piping 4 1 to 45. The pipes 4 1 to 4 5 are respectively provided with heating gas. The heating gas discharge ports 4 J a to 45a, which are the same as the discharge port (4a), and the heating gas introduction ports 41b to 4b, which are the same as the heating gas introduction port (4b), and the heating gas discharge ports 41a to 45a are respectively opened in the drawing factory. The space (2 6) is shown. In addition, the heater of the heating furnace (3) is divided into areas corresponding to each zone z1 to Z5, and each zone Z1 to Z5 can be controlled independently. Therefore, the temperature of the heating gas discharged into each of the zones Z1 to Z5 can be appropriately controlled.
C:\2D-CODE\9Ml\91119783.ptd 第14頁 565924 五、發明說明（12) 藉由這樣的構成，即 周邊部之間也不會產峰、、w全；大型的基板，可在中央部與 昇溫、降溫。 酿之下，對基板全體進行急速的 發明之效杲 依據本發明之基板埶卢 置來喷吹加熱用=對；力’：於：經由透過擴散裝 均一地加熱。 丁加”、、故可對基板咼速且 依據本發明之平板裝置 散裝置來喷吹加敎用氣體^ 方法，由於可經由透過擴 速且均—地加熱 肢對基板進行加熱，故可對基板高 元件編號說明 基板 2 3 3a 3b 4 4A 4a 4b 5 5a, 31 6 製程室 加熱爐 爐體 加熱器 加熱用配管 加熱用配管 加熱氣體排出口 加熱氣體導入口 預備加熱爐 外殼 凸緣 基板升降機（基板升降裝置）C: \ 2D-CODE \ 9Ml \ 91119783.ptd Page 14 565924 V. Description of the invention (12) With such a structure, the peaks and the whole are not generated between the peripheral parts; large substrates can be used in The central part is warming and cooling. Under the circumstances, the entire substrate is rapidly affected by the invention. The substrate according to the present invention is used for spray heating = pair; force ': in: uniformly heated through the diffusion device. "Dinga", so the substrate can be fastened and the gas according to the flat plate device of the present invention can be used to inject the gas ^ method. Since the substrate can be heated through the expansion and uniform heating of the limbs, the substrate can be heated. Substrate high component number description Substrate 2 3 3a 3b 4 4A 4a 4b 5 5a, 31 6 Process chamber heating furnace Furnace heater heating piping heating piping heating gas exhaust outlet heating gas inlet preparation furnace shell flange substrate lifter ( Board lifting device)
C:\2D-OODE\91-ll\91119783.ptd 第15頁 565924 五、發明說明（13) 9 降溫用氣體導入口（冷卻氣體供給裝置） 21 開孔板（擴散裝置） 22 門 23 氣體排出口 25 冷卻用氣體導入口 26 空間 4 1〜4 5 配管 41a〜45a 加熱氣體排出口 41b〜45b 加熱氣體導入口 71 臂 72 促動器 73 基板載置器 7 3a 石英製的板 7 3b 石英製的插梢 100 基板熱處理裝置C: \ 2D-OODE \ 91-ll \ 91119783.ptd Page 15 565924 V. Description of the invention (13) 9 Cooling gas inlet (cooling gas supply device) 21 Orifice plate (diffusion device) 22 Door 23 Gas exhaust Outlet 25 Cooling gas inlet 26 Space 4 1 to 4 5 Pipes 41a to 45a Heating gas outlets 41b to 45b Heating gas inlet 71 Arm 72 Actuator 73 Substrate mount 7 3a Quartz plate 7 3b Quartz Heat treatment device for 100 pins
C:\2D-CODE\91-ll\9m9783.ptd 第16頁 565924 圖式簡單說明 圖1為本實施形態之基板熱處理裝置的剖視圖。 圖2為顯示自圖1的I I _ I I線方向來看之加熱用配管的形 狀之圖。 圖3為顯示其他的加熱用配管的形狀之圖。C: \ 2D-CODE \ 91-ll \ 9m9783.ptd Page 16 565924 Brief Description of Drawings Figure 1 is a cross-sectional view of a substrate heat treatment apparatus of this embodiment. Fig. 2 is a diagram showing the shape of a heating pipe viewed from the direction of the I I _ I I line in Fig. 1. FIG. 3 is a view showing the shape of another heating pipe.
C:\2D-CODE\9Ml\91119783.ptd 第17頁C: \ 2D-CODE \ 9Ml \ 91119783.ptd Page 17
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001119871A JP3501768B2 (en) | 2001-04-18 | 2001-04-18 | Substrate heat treatment apparatus and method of manufacturing flat panel device |
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| Publication Number | Publication Date |
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| TW565924B true TW565924B (en) | 2003-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW091119783A TW565924B (en) | 2001-04-18 | 2002-08-30 | Substrate heat treatment apparatus and manufacturing method of flat device |
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| JP (1) | JP3501768B2 (en) |
| KR (1) | KR100473316B1 (en) |
| TW (1) | TW565924B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477545A (en) * | 2010-11-23 | 2012-05-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device and plasma chemical vapor deposition apparatus therewith |
| CN103132008A (en) * | 2013-03-22 | 2013-06-05 | 周厚全 | Induction heater and method for realizing non-preheating cladding of alloy on steel rail by using same |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100543711B1 (en) * | 2004-06-19 | 2006-01-20 | 삼성전자주식회사 | Heat treatment apparatus |
| JP2006245491A (en) * | 2005-03-07 | 2006-09-14 | Gasonics:Kk | Equipment and method for heat treating substrate |
| JP2006245492A (en) * | 2005-03-07 | 2006-09-14 | Gasonics:Kk | Equipment and method for heat treating substrate |
| JP4976110B2 (en) * | 2006-11-15 | 2012-07-18 | 東京エレクトロン株式会社 | Processing system, processing method, and recording medium |
| US20120045883A1 (en) * | 2010-08-23 | 2012-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
| JP6242933B2 (en) | 2016-03-31 | 2017-12-06 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and program |
| JP2019119649A (en) * | 2018-01-09 | 2019-07-22 | 日本電気硝子株式会社 | Manufacturing method for glass substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02187015A (en) * | 1989-01-13 | 1990-07-23 | Tokyo Electron Ltd | Heating device |
| JP2839621B2 (en) * | 1990-02-13 | 1998-12-16 | 株式会社東芝 | Thermal diffusion equipment for semiconductor manufacturing |
| JPH0777998B2 (en) * | 1991-01-14 | 1995-08-23 | 大日本スクリーン製造株式会社 | Substrate heating device |
| JPH07147239A (en) * | 1993-11-25 | 1995-06-06 | Nec Corp | Low pressure film forming equipment |
| JPH09260364A (en) * | 1996-03-26 | 1997-10-03 | Tokyo Electron Ltd | Thermal treatment method and thermal treatment equipment |
| JPH10242024A (en) * | 1997-02-27 | 1998-09-11 | Dainippon Screen Mfg Co Ltd | Substrate heat treatment equipment |
| EP1234328A2 (en) * | 1999-11-01 | 2002-08-28 | Jetek, Inc. | Method for rapid thermal processing of substrates |
| JP4357786B2 (en) * | 2001-03-16 | 2009-11-04 | 株式会社半導体エネルギー研究所 | Heat treatment apparatus and heat treatment method |
-
2001
- 2001-04-18 JP JP2001119871A patent/JP3501768B2/en not_active Expired - Fee Related
-
2002
- 2002-01-18 KR KR10-2002-0003015A patent/KR100473316B1/en not_active IP Right Cessation
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477545A (en) * | 2010-11-23 | 2012-05-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device and plasma chemical vapor deposition apparatus therewith |
| CN102477545B (en) * | 2010-11-23 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device and plasma chemical vapor deposition apparatus therewith |
| CN103132008A (en) * | 2013-03-22 | 2013-06-05 | 周厚全 | Induction heater and method for realizing non-preheating cladding of alloy on steel rail by using same |
| CN103132008B (en) * | 2013-03-22 | 2015-06-17 | 周厚全 | Induction heater and method for realizing non-preheating cladding of alloy on steel rail by using same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100473316B1 (en) | 2005-03-08 |
| KR20020081053A (en) | 2002-10-26 |
| JP2002313796A (en) | 2002-10-25 |
| JP3501768B2 (en) | 2004-03-02 |
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