CN110172683A - Heating mechanism, plasma chamber and the method to form a film on substrate - Google Patents

Heating mechanism, plasma chamber and the method to form a film on substrate Download PDF

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Publication number
CN110172683A
CN110172683A CN201910564910.5A CN201910564910A CN110172683A CN 110172683 A CN110172683 A CN 110172683A CN 201910564910 A CN201910564910 A CN 201910564910A CN 110172683 A CN110172683 A CN 110172683A
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CN
China
Prior art keywords
washer
platform body
substrate
hot platform
hole
Prior art date
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Pending
Application number
CN201910564910.5A
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Chinese (zh)
Inventor
赖善春
王燕锋
梁鹏
梁华宝
黄华
王天
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Yungu Guan Technology Co Ltd
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Yungu Guan Technology Co Ltd
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Priority to CN201910564910.5A priority Critical patent/CN110172683A/en
Publication of CN110172683A publication Critical patent/CN110172683A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a kind of heating mechanism, plasma chamber and the method to form a film on substrate, heating mechanism includes: hot platform body, the washer on hot platform body and gas preheating structure.Wherein, the substrate to be deposited, the washer, the hot platform body are stacked forms sealing space, and the gas preheating structure is arranged and is connected with the sealing space.By adding washer on hot platform body, so that substrate to be deposited, washer, hot platform body are stacked to form sealing space, preheating gas is further introduced into sealing space, gas heat is passed into substrate to be deposited, it can avoid the inhomogenous problem of temperature everywhere on substrate, improve the uniformity to form a film on substrate.

Description

Heating mechanism, plasma chamber and the method to form a film on substrate
Technical field
The present invention relates to plasma processing device technical fields, more particularly to a kind of heating mechanism, plasma chamber Room and the method to form a film on substrate.
Background technique
With the continuous development of display technology, more stringent requirements are proposed for properties of the people to display screen.In recent years, Display device is based especially on the display dress of Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) It is set to as domestic and international popular emerging flat display products.OLED display panel have self-luminous, visual angle is wide, the reaction time is short, Luminous efficiency is high, colour gamut is wide, operating voltage is low, panel is thin, can make large scale, can make flexible panel and processing procedure is simple Etc. characteristics, and it also have low cost potentiality.
OLED device mainly includes the anode, organic luminous layer and cathode being stacked.The luminous of OLED device passes through picture Transistor in plain driving circuit applies driving voltage on anode, to form voltage difference between the anode and the cathode.
Each floor of each floor and transistor in OLED device generally by placing the substrate in plasma chamber room, uses PECVD (plasma enhanced chemical vapor deposition) technique is made.And temperature is inhomogenous everywhere on substrate in actual process, leads Formed film layer is caused problem in uneven thickness also often occur, this influences the reliability of OLED display panel.
Summary of the invention
Based on this, it is necessary to provide a kind of heating mechanism, plasma chamber and the method to form a film on substrate.
One aspect of the present invention provides a kind of heating mechanism, for heating to substrate to be deposited, comprising: heat Platform body;
Washer is located on the hot platform body, wherein the substrate to be deposited, the washer, the hot platform body It is stacked to form sealing space;
And gas preheating structure, the gas preheating structure are connected with the sealing space.
It in one of the embodiments, further include several support needles;
The hot platform body along perpendicular to offering the first through hole on the direction of the hot platform body extended surface, The gas preheating structure is connected by first through hole with the sealing space;
The support needle and first through hole correspond and along perpendicular to the hot platform body extended surfaces Direction is movably arranged in corresponding first through hole;Wherein the washer includes being used to support the substrate to be deposited Supporting surface, it is each it is described support needle include higher than the washer supporting surface holding state and lower than the washer supporting surface Contraction state.
The hot platform body is along perpendicular on the direction of the hot platform body extended surface in one of the embodiments, Offer the second through hole;And/or along perpendicular to being set on the direction of the hot platform body extended surface in each support needle There is the second through hole;
And the gas preheating structure is connected by second through hole with the sealing space;
Preferably, the hot platform body and each support needle are equipped with second through hole, and each described second Through hole is arranged in array.
In one of the embodiments, along perpendicular on the direction of the hot platform body extended surface in each support needle Equipped with the second through hole, and each support needle further includes branch fastener, and under the contraction state, the branch fastener is located at institute It states between hot platform body and the washer supporting surface;
Also, several apertures being connected with second through hole are placed on the branch fastener;
Preferably, several described apertures are successively obliquely installed outward by the center of the branch fastener.
The washer edge, which is parallel on the direction of the hot platform body extended surface, in one of the embodiments, offers Several third through holes, each third through hole are connected to the sealing space and the gas preheating structure.
At least one the 4th through hole is provided on the washer in one of the embodiments, and/or, the pad The contact portion of circle and the hot platform body is provided at least one the 4th through hole, and/or, the hot platform body Edge is provided at least one the 4th through hole;
The heating mechanism further includes gas recovery structure, the gas recovery structure by the 4th through hole with The sealing space is connected;
Preferably, the gas preheating structure is multiplexed with the gas recovery structure.
The contact portion of the hot platform body and the washer is placed with wedging structure in one of the embodiments, For positioning the washer.
The washer is provided on the direction perpendicular to the hot platform body extended surface in one of the embodiments, Annular step, the annular step are used to support the substrate to be deposited;
Preferably, the washer is ceramic material;
Another aspect of the present invention provides a kind of plasma cavity, which is characterized in that including described in any of the above-described Heating mechanism;
The plasma cavity is used for chemical vapor deposition process in one of the embodiments,.
Another aspect of the present invention provides a kind of method to form a film on substrate, which is characterized in that including walking as follows It is rapid:
There is provided plasma cavity, wherein include heating mechanism in the plasma cavity, the heating mechanism includes that heat is flat Playscript with stage directions body, washer and gas preheating structure, and stacked formed of the substrate, the washer, the hot platform body seals sky Between, the gas preheating structure is connected with the sealing space;
The substrate is preheated, including the gas preheating structure carries out indirect heating to the substrate;
Subsequent film-forming process.
Heating mechanism, plasma chamber and the method to form a film on substrate provided by the embodiments of the present application, by heat Washer is added on platform body, so that the stacked sealing space formed of substrate to be deposited, washer, hot platform body, by close Envelope introduces preheating gas in space, and gas heat is passed to substrate to be deposited, and temperature is inhomogenous everywhere on avoidable substrate Problem.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not It can the limitation present invention.
Detailed description of the invention
Fig. 1 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Fig. 2 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Fig. 3 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Fig. 4 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Fig. 5 is the support needle vertical profile structural schematic diagram of an embodiment.
Fig. 6 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Fig. 7 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Fig. 8 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Fig. 9 is the heating mechanism vertical profile structural schematic diagram of an embodiment.
Figure 10 is the heating mechanism perspective view schematic diagram of an embodiment.
Figure 11 is the washer overlooking structure diagram of an embodiment.
Figure 12 is the washer overlooking structure diagram of an embodiment.
Figure 13 is the washer overlooking structure diagram of an embodiment.
Figure 14 is the method flow schematic diagram of an embodiment to form a film on substrate.
Drawing reference numeral explanation:
The hot platform body of 100- heating mechanism, 10-, the first through hole of 11-, the second through hole of 12-, 13- third are passed through Punch track, the 4th through hole of 14-, 20- washer, 21- wedging structure, 22- annular step, 30- gas preheating structure, 31- Gas recovery structure, 40- substrate to be deposited, 50- sealing space, 60- support needle.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing Give preferred embodiment of the invention.But the invention can be realized in many different forms, however it is not limited to herein Described embodiment.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more saturating It is thorough comprehensive.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ", " right side " and similar statement are for illustrative purposes only.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases Any and all combinations of the listed item of pass.
As described in background, display screen is during manufacture at present, usually using PECVD (plasma enhancing Type chemical vapor deposition) equipment completes the vapor deposition of each film layer on a glass substrate.When technique starts, substrate is by vacuum mechanical-arm Be sent to plasma chamber, support needle (PIN or lift pin) lift substrates extract vacuum mechanical-arm out, rear support Needle drops to Process (technique) position and substrate lower surface is made to be bonded heating with heater (substrate heating platform) upper surface. Processing procedure gas and Plasma (plasma) time started length are imported after heating the T1 time as the film-plating process of T2, Zhi Houji Piece is supported needle and rises so that vacuum mechanical-arm takes the substrate for being coated with film layer away from cavity and sends out equipment.
Because using glass substrate, resulting film layer is not consistent in the film thickness uniformity of entire substrate surface, according to long-term Film thickness measuring data statistics post analysis, the partially thin region of discovery film thickness concentrates on the position for corresponding to support needle.Vacuum state Lower heating platform is contacted with glass substrate, and by the heat transfer of heating platform to glass substrate, since glass substrate belongs to heat Non-conductor, in addition, the limitation due to supporting this body structure of needle, support needle itself can not give substrate to provide heat, therefore glass Glass substrate fits in when heating on heating platform, and the temperature corresponding to support needle region is relatively lower elsewhere, so changing The extent of reaction in the region is then lower with respect to the extent of reaction in other regions when learning vapor deposition, causes the region film layer with respect to it His region is partially thin.
If substrate heat transfer efficiency is poor, above-mentioned problem of non-uniform is more obvious.
In view of the above-mentioned problems, if extending heating time, so that temperature diffusion is uniformly, the productive temp of glass substrate can be extended Time causes the problem that processing efficiency is low, is unfavorable for the quick production of high-performance display screen.
The present invention proposes to improve heating structure, by the way that certain sealing space is arranged between heating platform and glass substrate, Indirect heating is carried out to glass substrate, the rate of heat transfer of indirect heating is more uniform, so that corresponding to branch in glass substrate Support needle at temperature and other regions temperature substantially close to.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention Specific embodiment be described in detail.In the absence of conflict, the feature in following embodiment and embodiment can be with It is complementary to one another or is combined with each other.
The embodiment of the present application provides a kind of heating mechanism.Referring to Fig. 1, heating mechanism 100 includes hot platform body 10, pad Circle 20 and gas preheating structure 30.Wherein, washer 20 is located on hot platform body 10, substrate 40 to be deposited, washer 20, heat Platform body 10 is stacked to form sealing space 50, and gas preheating structure 30 is connected with sealing space 50.
It should be noted that the quantity of gas preheating structure 30 is illustrated for one in Fig. 1, but this hair The bright quantity to gas preheating structure 30 without limitation, also without limitation to its way of realization.Gas preheating structure 30 with it is closed Space 50 is connected, and provides heat for substrate 40 to be deposited and carries out indirect heating.It is close that gas preheating structure 30, which can be, The gas sealed in space 50 provides the heat source of heat, is also possible to hot gas body feeding, provides hot gas for sealing space 50 Or thermal medium, and then heat is provided for substrate 40 to be deposited.
Referring to Fig. 2, further including several support needles 60 in heating mechanism 100, hot platform body 10 is along perpendicular to hot platform Offer the first through hole 11 on the direction of the extended surface of ontology 10, gas preheating structure 30 by the first through hole 11 with Sealing space 50 is connected.
It supports needle 60 and the first through hole 11 one-to-one correspondence and edge can perpendicular to the direction of hot 10 extended surface of platform body Mobile is set in corresponding first through hole 11, and washer 20 includes the supporting surface for being used to support substrate 40 to be deposited, each to support Needle 60 includes the contraction state higher than the holding state of 20 supporting surface of washer and lower than 20 supporting surface of washer.
It should be noted that be illustrated so that the quantity of the first through hole 11 is three as an example in Fig. 2, but it is of the invention Without limitation to the quantity of the first through hole 11.The quantity of first through hole 11 can be one, or it is multiple, when When the quantity of first through hole 11 is multiple, the quantity of gas preheating structure 30 may be one or more.It passes through when first When the quantity of punch track 11 and the quantity of gas preheating structure 30 are multiple, each first through hole 11 can be with communication seals Space 50 and a gas preheating structure 30, each first through hole 11 can also be pre- with communication seals space 50 and multiple gases Heat structure 30.
Fig. 3 and Fig. 4 are please referred to, hot platform body 10 offers along the direction perpendicular to hot 10 extended surface of platform body Two through holes 12, and/or, each support in needle 60 is run through along the direction perpendicular to hot 10 extended surface of platform body equipped with second Duct 12, and gas preheating structure 30 is connected by the second through hole 12 with sealing space 50.
It should be noted that when each support needle 60 is not supported substrate 40 to be deposited, each support for supporting needle 60 Horizontal plane where head can want low (not shown) with 10 place horizontal plane of specific heat platform body, at this point, the respectively branch of support needle 60 On fastener aperture can be laid on the surface of support head rest substrate 40 closely to be deposited.
As shown in figure 4, hot platform body 10 and each support needle 60 are equipped with the second through hole 12, each second through hole 12 are arranged in array.
It should be noted that the second through hole 12 is from hot platform body 10 to 40 penetration heat platform sheet of substrate to be deposited Body 10, direction setting of the present embodiment with the second through hole 12 perpendicular to the extended surface of hot platform body 10 are shown Example explanation, but limited not to this.It is illustrated by taking longitudinal section view as an example, please refers to Fig. 3 and Fig. 4, single second through hole The vertical profile shape in road 12 can be rectangle, or other rules or irregular shape, and each second through hole The vertical profile shape in road 12 can be the same or different.In addition, the second through hole 12 can also be from hot 10 spiral of platform body To 40 penetration heat platform body 10 of substrate to be deposited, it is not shown in Fig. 3 and Fig. 4, but be limited in the present invention not to this, As long as meeting from hot platform body 10 to 40 penetration heat platform body 10 of substrate to be deposited.
Fig. 2 and Fig. 5 are please referred to, each support in needle 60 is equipped with second along the direction perpendicular to hot 10 extended surface of platform body Through hole 12, and each support needle further includes branch fastener, when supporting needle not to be supported to substrate (under contraction state), Branch fastener is between hot platform body 10 and the supporting surface of washer 20.Also, it is placed with several on branch fastener to pass through with second The aperture that punch track 12 is connected, several described apertures are successively obliquely installed outward by the center of the branch fastener.
It is understood that in the present invention simultaneously for position, shape, quantity and the size of the aperture being arranged on support needle 60 Without limitation.The position of aperture can in the side of the nearly substrate of support head rest, can also in the side of the nearly washer of support head rest, Aperture can be respectively provided on the surface of branch fastener.In addition, aperture can be one, or multiple.When the quantity of aperture is When multiple, each aperture can helically rise shape arrangement along the extending direction of support needle, to carry out more uniform add to substrate Heat.
It is passed through referring to Fig. 6, washer 20 offers several thirds along the direction for being parallel to hot 10 extended surface of platform body Punch track 13, each third through hole 13 are connected to the sealing space 50 and the gas preheating structure 30.
It should be noted that is schematically illustrated in Fig. 6 is in washer 20 along being parallel to hot 10 extended surface of platform body Direction on offer several third through holes 13, but not under each view of third through hole 13 shape, quantity, Way of realization, matching relationship of each third through hole 13 etc. limit.It is illustrated by taking longitudinal section view as an example, referring to Fig. 6, The vertical profile shape of single third through hole 13 can be rectangle, or other rules or irregular shape, and The vertical profile shape of different third through holes 13 can be the same or different.In addition, each third through hole 13 is connected to institute Sealing space 50 and the gas preheating structure 30 are stated, gas preheating structure 30 and gas mentioned above preheating here is tied Structure 30 can be the same gas preheating structure, be also possible to different gas preheating minor structures, and which is not limited by the present invention, Details are not described herein again.
Fig. 7 and Fig. 8 are please referred to, at least one the 4th through hole 14 is provided on washer 20, and/or, washer 20 and heat The contact portion of platform body 10 is provided at least one the 4th through hole 14, and/or, the edge of hot platform body 10 is set It is equipped at least one the 4th through hole 14.That is, the 4th through hole 14 can be set in washer 20, can be set The portion contacted on hot platform body 10 with washer 20 also can be set in the part contacted on washer 20 with hot platform body 10 Point.Certainly, the quantity of the 4th through hole 14 can be one, or multiple, shape, quantity, way of realization, each the Without limitation, details are not described herein for matching relationship between four through holes 14 etc..
Further, heating mechanism 100 further includes gas recovery structure 31, and gas recovery structure 31 passes through the 4th through hole Road 14 is connected with sealing space 50.Certainly, gas preheating structure 30 can also be multiplexed with gas recovery structure 31, to realize heat Recycling for gas, economizes on resources.
Please refer to Fig. 9 and Figure 10, the contact portion of hot platform body 10 and washer 20 is placed with wedging structure, for positioning Washer 20.Specifically, it is provided with location hole on hot platform body 10, positioning column, location hole and positioning column is provided on washer 20 Wedging is with space washer 20;Alternatively, being provided with positioning column on hot platform body 10, location hole, location hole are provided on washer 20 With positioning column wedging with space washer 20.The present invention for wedging structure concrete form without limitation, to realize space washer Subject to 20 function.
Fig. 1-4, Fig. 6-10 are please referred to, washer 20 is provided with ring on the direction of the extended surface perpendicular to hot platform body 10 Shape stage portion, annular step are used to support substrate 40 to be deposited.That is, along hot platform body 10 to substrate 40 to be deposited Direction on, washer 20 can be single layer setting can be multilayer setting, and washer 20 single layer be arranged or multilayer setting feelings Under condition, may exist the case where uneven thickness one on the direction of substrate 40 to be deposited along hot platform body 10.
Please continue to refer to Figure 11-13, Figure 11-13 be washer 20 along substrate 40 to be deposited to the vertical view of hot platform body 10 Scheme, in the present invention without limitation for the concrete shape of top view middle washer, to realize washer 20 to the branch of substrate 40 to be deposited Subject to support effect.
It should be noted that in the present invention, used washer 20 can be ceramic material, or other materials Matter, the present invention to material, thermal conductivity of washer 20 etc. without limitation.Washer 20 plays a supportive role to substrate 40 to be deposited, will Hot platform body 10 and substrate to be deposited 40 are separated, and the two is not directly contacted with.By setting gas heating structure 30 be to Substrate 40 is deposited, heat is provided.Include the part directly contacted with washer 20 on substrate 40 to be deposited, further includes and sealing space 50 contact parts, in order to guarantee that the temperature on substrate 40 to be deposited everywhere is uniform, the temperature of washer 20 as far as possible with hot platform Ontology 10 and gas heating structure 30 are consistent, inhomogenous on influence caused by substrate 40 to be deposited to weaken temperature.Moreover, Hot platform body 10 itself can also provide heat, heat to the medium in sealing space.Hot platform body 10 itself can There is heat source supply that it is made to keep temperature substantially constant with fever or hot platform body 10.Specifically, hot platform body 10 is interior Heating wire has can be set in portion, and heating wire is in the area distribution Relatively centralized for being disposed with the first through hole 11, and each first It carries out surrounding setting around through hole 11, so as to there is the region of the first through hole 11 on hot platform body 10 and without first The regional temperature of through hole 11 is essentially identical.Certainly, this is specific a kind of way of realization of the invention, the present invention to this not It limits.
That is, washer plays a supportive role to substrate 40 to be deposited, on the substrate 40 to be deposited and portion of the contact of washer 20 Point with not in contact with part, the two temperature will be consistent as far as possible.Moreover, if substrate to be deposited is array substrate, washer The size of the part to play a supportive role on 20 is less than the cutting trough equal to array substrate, cannot influence the property of final products Energy.
Correspondingly, the present invention also provides the plasma cavity in an embodiment, which includes above-mentioned to base The heating mechanism 100 that piece is preheated, for techniques such as chemical vapor depositions.
Correspondingly, the present invention also provides the method to form a film on substrate in an embodiment, Figure 14, this method are please referred to Include:
Substrate 40 to be deposited is sent into plasma chamber chamber interior, wherein include heating mechanism in the plasma cavity 100, the heating mechanism 100 includes the hot washer 20 platform body 10 and be placed on the hot platform body;By described wait steam Plating substrate 40 is placed on washer 20, is formed so that the substrate to be deposited 40, the washer 20, the hot platform body 10 are stacked Sealing space 50;
Preheating gas is passed through the sealing space 50 to heat the substrate 40 to be deposited;
After the substrate to be deposited 40 reaches predetermined temperature, start subsequent film-forming process.
In practical operation technique, it is illustrated by taking chemical vapor deposition as an example.Firstly, presedimentary preparation stage, machine Substrate to be deposited is transported to designated position by tool arm.Secondly, support needle rises to and contacts with the substrate to be deposited, it is heavy to treat Long-pending substrate is played a supporting role.Then, which is detached from, and support needle moves downward, and substrate to be deposited follows the support Needle moves downward, until substrate to be deposited is contacted with heating mechanism.In the present invention, due to including hot platform in heating mechanism Ontology, the washer on hot platform body and gas heating structure, substrate to be deposited can be located at hot platform body on Washer contacts;Hot platform body, washer, substrate three to be deposited, which are stacked, forms sealing space, and gas heating structure is sealing Space provides heat, and then heats to substrate to be deposited.Finally, carrying out normal film deposition work after heating Skill.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.

Claims (10)

1. a kind of heating mechanism, for being heated to substrate to be deposited characterized by comprising
Hot platform body;
Washer is located on the hot platform body, wherein the substrate to be deposited, the washer, the hot platform body are stacked Form sealing space;And
Gas preheating structure, the gas preheating structure are connected with the sealing space.
2. heating mechanism according to claim 1, which is characterized in that further include several support needles;
The hot platform body is described along perpendicular to offering the first through hole on the direction of the hot platform body extended surface Gas preheating structure is connected by first through hole with the sealing space;
The support needle and first through hole correspond and along the directions perpendicular to the hot platform body extended surface It is movably arranged in corresponding first through hole;Wherein the washer includes the branch for being used to support the substrate to be deposited Support face, each support needle include the contraction higher than the holding state of the washer supporting surface and lower than the washer supporting surface State.
3. heating mechanism according to claim 2, which is characterized in that the hot platform body is along perpendicular to the hot platform The second through hole is offered on the direction of ontology extended surface;And/or along perpendicular to the Re Pingtaiben in each support needle The direction of body extended surface is equipped with the second through hole;
The gas preheating structure is connected by second through hole with the sealing space;
Preferably, the hot platform body and each support needle are equipped with second through hole, and each described second runs through Duct is arranged in array.
4. heating mechanism according to claim 2, which is characterized in that along perpendicular to the hot platform in each support needle The direction of ontology extended surface is equipped with the second through hole, and each support needle further includes branch fastener, in the contraction state Under, the branch fastener is between the hot platform body and the washer supporting surface;Several are placed on the branch fastener The aperture being connected with second through hole;
Preferably, several described apertures are successively obliquely installed outward by the center of the branch fastener.
5. heating mechanism according to claim 3, which is characterized in that the washer edge is parallel to the hot platform body and prolongs Stretch and offer several third through holes on the direction in face, each third through hole be connected to the sealing space with it is described Gas preheating structure.
6. the heating mechanism according to any one of claim 3-5, which is characterized in that be provided at least one on the washer A 4th through hole, and/or, the contact portion of the washer and the hot platform body is provided at least one and the 4th runs through Duct, and/or, the edge of the hot platform body is provided at least one the 4th through hole;
The heating mechanism further includes gas recovery structure, the gas recovery structure by the 4th through hole with it is described Sealing space is connected;
Preferably, the gas preheating structure is multiplexed with the gas recovery structure.
7. heating mechanism according to claim 1, which is characterized in that the contact portion of the hot platform body and the washer Divide and be placed with wedging structure, for positioning the washer.
8. heating mechanism according to claim 1, which is characterized in that the washer prolongs perpendicular to the hot platform body It stretches and is provided with annular step on the direction in face, the annular step is used to support the substrate to be deposited;
Preferably, the washer is ceramic material.
9. a kind of plasma cavity, which is characterized in that including the described in any item heating mechanisms of claim 1 to 8;
Preferably, the plasma cavity is used for chemical vapor deposition process.
10. a method of it forms a film on substrate, which comprises the steps of:
Substrate to be deposited is sent into plasma chamber chamber interior, wherein include heating mechanism, the heating in the plasma cavity Mechanism includes hot platform body and the washer that is placed on the hot platform body;The substrate to be deposited is placed on washer, is made The substrate to be deposited, the washer, the hot platform body are stacked forms sealing space;
Preheating gas is passed through the sealing space to heat the substrate to be deposited;
After the substrate to be deposited reaches predetermined temperature, start subsequent film-forming process.
CN201910564910.5A 2019-06-27 2019-06-27 Heating mechanism, plasma chamber and the method to form a film on substrate Pending CN110172683A (en)

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