TW561564B - Flip-chip like light emitting device package - Google Patents

Flip-chip like light emitting device package Download PDF

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Publication number
TW561564B
TW561564B TW91123874A TW91123874A TW561564B TW 561564 B TW561564 B TW 561564B TW 91123874 A TW91123874 A TW 91123874A TW 91123874 A TW91123874 A TW 91123874A TW 561564 B TW561564 B TW 561564B
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TW
Taiwan
Prior art keywords
light
emitting diode
flip
chip
patent application
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TW91123874A
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Chinese (zh)
Inventor
Bor-Jen Wu
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Uni Light Technology Inc
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Priority to TW91123874A priority Critical patent/TW561564B/en
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Publication of TW561564B publication Critical patent/TW561564B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

A flip-chip like light emitting device package is provided. The present flip-chip like light emitting device package includes a transparent substrate having a first surface with a recess formed thereon, and a light emitting diode is placed in the recess. The light emitting diode emits light toward the first surface like the way a flip-chip type die illuminating, and thus not obstructed with a bonding pad formed on the light emitting diode. The light-emitting area is enlarged and the illuminating intensity is improved. In addition, the light emitting diode is placed in the recess so as to reduce the thickness of a molding compound encapsulating the light emitting diode.

Description

561564 五、發明說明（1) 5 - 1發明領域： 本發明係有關於一種半導體發光二極體元 有關於一種仿覆晶型（flip-chip Uke)晶粒^方= 的發光二極體元件封裝。 私疋万向 5 - 發明背景 株ί ί Ϊ發光元件是—種將電能轉換成光能的半導體- 二歹口 型半導體材料。在_半導導體材枓 :外殼電子可自由移動，構成 ：： 包括第五Α族元素，例如鱗 枓 氮（N)等。N型半導俨姑极士 7 c As)錦（Sb)及 。Π 2 4中的載子稱做捐出者（donor) 且ΐί半導體材料中，由於缺乏電子，原i 2音=/、’、可做為载子。P型半導體材料包括第:A;^ 兀素，例如鋁（A1)、始γ P、 木一Α族 ^ * AA ^ *7 (G a)及銦（in)等。p型半暮 體材枓中的載子稱做接受者（a⑽ptQr)。 導 當N型及P型丰莫辦 Μ接面形成於ί型導及體起形成-複合材料時， 會重新分佈於Ci導體材料之間，且電子、電洞 上的一電極時，半導體好二一正向偏壓施予在此複合材料 穿越此Μ接面。換ΠΪ 有不同導電性的載子將會 、J居说，發光二極體的發光原理係在·正 561564 五、發明說明（2) 向偏壓下，P型材料中的電洞與N型材料中的電子在p滕面 附近結合，並以發光方式釋出能量。 第一 A圖係一傳統的藍光發光二極體元件（SMD )( surf ace mounting dev ice)封裝1 〇的截面示意圖。第一 B圖係此傳統的藍光發光二極體的頂視圖。參第一 a圖，在 此一傳統的藍光發光二極體元件封裝1 〇中，一藍光發光 二極體的藍寶石基材（sapphire substrate) 1 〇 2係置 放於一不透明基板1 0 0上。一固晶材料1 〇 1 ，例如環 氧樹脂，係用以將此藍寶石發光二極體固著於不透明基板 1 0 0上。一 N型氮化鎵化合物（n-GaN) 1 〇 4係形成於 此藍寶石基材1 0 2上方。一 P型氮化鎵化合物（p-GaN) 極 8上，並經由一焊線丄2 〇電性連接至經圖案蝕刻形成於 1 0 6係經由典型元件製程做成平台狀結構（mesa)，使得 P型氮化鎵化合物1 〇 6只覆蓋於此n型氮化鎵化合物（n-GaN) 1 〇 4的部份表面。再者，n型氮化鎵化合物1 〇 4 與P型氮化鎵化合物1 〇 6之間具有一發光層1 〇 5。P型 氣化鎵化合物（p-GaN) 1 〇 6的頂面係完全被一由氧化 鎳/金（nickel oxide/gold)組成的透明電極i 〇 8覆蓋 、。一 N型焊接接墊；[；[〇及p型焊接接墊i丄2係供做電性 連接接點。此N型焊接接墊1 1 〇形成於N型氮化鎵化合物 (n GaN) 1〇4曝露的表面上，並經由一焊線11 8電 性連接至經圖案蝕刻形成於不透明基板丄〇 〇的一第一電 4 ° P型焊接接墊1 1 2係形成於p型透明電極1 〇561564 V. Description of the invention (1) 5-1 Field of the invention: The present invention relates to a semiconductor light-emitting diode element and a flip-chip Uke grain ^ square = light-emitting diode element Package.私 疋 向 5-Background of the invention The light emitting element is a semiconductor that converts electrical energy into light energy-a two-port semiconductor material. The semiconducting conductive material 枓: the shell electrons can move freely and constitute :: including group A elements such as scale 枓 nitrogen (N) and the like. N-type semi-conducting 俨 Gu Jiushi 7 c As) Jin (Sb) and. The carriers in Π 2 4 are called donors. In semiconductor materials, due to the lack of electrons, the original i 2 tone = /, ′, can be used as carriers. P-type semiconductor materials include: A; ^ element, such as aluminum (A1), starting γ P, Mu-A group ^ * AA ^ * 7 (G a) and indium (in) and so on. The carriers in the p-type half twilight are called receivers (a⑽ptQr). When the N-type and P-type Fengmoban M junctions are formed in the 导 -type conductor and the body-composite material, it will be redistributed between the Ci conductor material and an electrode on the electron and hole, the semiconductor is good. Twenty-one forward biases are applied across the M junction at this composite material. Changing ΠΪ Carriers with different conductivity will, J. Ju said, the principle of light emitting diode is · 561561. V. Description of the invention (2) Holes and N-types in P-type materials under bias The electrons in the material are combined near the pten surface and release energy in a luminous manner. The first diagram A is a schematic cross-sectional view of a conventional blue light emitting diode device (SMD) (surf ace mounting dev ice) package 10. The first B picture is a top view of the conventional blue light emitting diode. Referring to FIG. 1a, in this conventional blue light emitting diode element package 10, a sapphire substrate 1 0 2 of a blue light emitting diode is placed on an opaque substrate 100 . A solid crystal material 101, such as an epoxy resin, is used to fix the sapphire light-emitting diode on an opaque substrate 100. An N-type GaN compound (n-GaN) 104 is formed on the sapphire substrate 102. A P-type gallium nitride compound (p-GaN) electrode 8 is electrically connected to a mesa via a bonding wire 丄 20 to be pattern-etched to form a mesa-like structure (106) through a typical device process. As a result, the P-type gallium nitride compound 106 covers only part of the surface of the n-type gallium nitride compound (n-GaN) 104. Furthermore, a light emitting layer 105 is provided between the n-type gallium nitride compound 104 and the p-type gallium nitride compound 106. The top surface of the P-type gallium nitride compound (p-GaN) 106 is completely covered by a transparent electrode i 08 composed of nickel oxide / gold. An N-type soldering pad; [; [0 and p-type soldering pad i 丄 2 are used for electrical connection contacts. The N-type solder pad 1 1 0 is formed on an exposed surface of an N-type gallium nitride compound (n GaN) 104, and is electrically connected to a non-transparent substrate formed by pattern etching through a bonding wire 1 1 8. A first electrical 4 ° P-type solder pad 1 1 2 is formed on a p-type transparent electrode 1 〇

第6頁 561564 五、發明說明（3) 二電極1 1 6。藍光發光二極 、P型.焊接接墊1 1 2及焊線]_ 2 2例如環氧樹脂封膠所封蓋 1 不透明基板1 0 0的一第 體、N型焊接接墊1 1 〇 8 、1 2 〇係由一封膠丄 以免受到外力破壞。 ¥筒二ί i圖^所广的此傳統藍光發光二極體的頂視圖，p (tr nP^aN) 1 〇 口 a 〇 4上方，並且覆蓋N型氮化鎵化合物（ ϋ I ^ 4的部份表面。p型透明電極1 Ο 8係完全覆 盍型氮化鎵化合物（p〜GaN) i 〇 6表面。Ν型焊接接墊 1 ^ 〇及p型焊接接墊1 1 2係分別位於藍光發光二極體 方形表面的對角線處。 k寶石基材1 〇 2為一電絕緣基材，因此n型焊接接 墊1 1 0及P型焊接接墊1 1 2須位於可分別電性連接至卜 型氮化鎵化合物1 〇 4及P型氮化鎵化合物1 〇 6處。由 於N型焊接接墊1 1 〇及p型焊接接墊i i 2的形成位置， 使得藍光發光二極體所發出的光受到N型及p却 蔡 1 0、1 1 2的限制。因此，此傳統的藍光發光二極體元 件封褒1 0的發光強度因P型焊接接墊1 1 2的遮擋而減 弱，且由底部反射回來的光也因N型及p型焊接接“塾丄工〇 、1 1 2的遮擔而降低。此外，發光二極體係凸出於不透 ，基板1 0 0之上’加上焊線1工8及工2 〇的高度，使 付封膠122的厚度無法降低。再者，在製造白光發光二Page 6 561564 V. Description of the invention (3) Two electrodes 1 1 6. Blue light emitting diode, P-type. Welding pad 1 1 2 and welding wire] _ 2 2 For example, the first body of opaque substrate 1 0 0 covered by epoxy resin sealant, N-type welding pad 1 1 〇8 1, 2 0 is a piece of glue to prevent damage by external forces. The top view of this traditional blue light-emitting diode, which is shown in FIG. 2 above, p (tr nP ^ aN) 1 〇 a a 〇4, and covered with N-type gallium nitride compound (ϋ I ^ 4 Partial surface. The p-type transparent electrode 108 is completely covered with y-type gallium nitride compound (p ~ GaN) i 〇6. The N-type solder pad 1 ^ 〇 and the p-type solder pad 1 1 2 are located at The diagonal of the square surface of the blue light-emitting diode. K gem substrate 1 〇2 is an electrically insulating substrate, so n-type solder pads 1 1 0 and P-type solder pads 1 1 2 must be located separately. It is connected to the p-type gallium nitride compound 104 and the p-type gallium nitride compound 106. Due to the formation position of the N-type solder pad 1 10 and the p-type solder pad ii 2, the blue light-emitting diode is made. The light emitted by the body is limited by the N-type and p-type 10, 1 1 2. Therefore, the luminous intensity of the conventional blue light-emitting diode element seal 10 is blocked by the P-type solder pad 1 12 It is weakened, and the light reflected from the bottom is also reduced due to the shielding of N-type and p-type welding "Machinery 0, 1 12". In addition, the light-emitting diode system is opaque. 0 on the substrate 10 'plus the height of the bonding wire 8 and the work station 1 in 2 billion, the thickness of the sealant 122 can not pay reduced. Further, in the manufacture of white light emitting

561564 五、發明說明~ —-— 極體B主 再加！萬Ϊ在封膠12 2形成前’在整個發光二極體上方 層螢光粉，使得製程較複雜。 據此’亟待提供一種改良的發-可克服上述缺失。 知尤一極體兀件封裝，其 5〜3發明目的及概述： 體元件#壯 禋頰似覆晶型的發光-朽 tl件封裝，其中一與覆晶型晶粒 知尤一極 極體係置放於、#日日A^先方向相同的發光二 極體之Ϊ凹部内，以使封蓋此發光-整體厚ΐ勝厂子度減少…降低此發光二極體元件封裝： +發明之另一目的係提供 2件封襞，其中一發光二極體係置放於一透 朝與=型發光二極體發光方向相心 於复基板赉光。因此，此發光二極體的發光不會 件：鞋方的一焊接接墊擋住。藉&，可增加發光二極體 、裝的發光面積，進而提高發光強度。561564 V. Description of the Invention ~ —- — Polar Body B Master Plus! Before the sealant 12 2 is formed, Wan's layer of phosphor powder on the entire light-emitting diode makes the process more complicated. Accordingly, there is an urgent need to provide an improved hair-which can overcome the aforementioned shortcomings. Zhiyou polar body package, its 5 ~ 3 purpose and summary of the invention: Body element #zhuang qi cheek-like light-emitting chip package, one of which is placed with flip-chip die Zhiyou pole system Put it in the recess of the light-emitting diode in the same direction as # 日 日 A ^, so that the light-emitting cover is reduced-the overall thickness of the light-emitting diode is reduced ... Reduce the package of the light-emitting diode: + Another invention The purpose is to provide 2 seals, one of which is a light-emitting diode system which is placed in a transparent direction and is opposite to the light emitting direction of the light-emitting diode. Therefore, the light-emitting diode of this light-emitting diode is not blocked by a welding pad on the shoe side. By using &, the light-emitting area of the light-emitting diode and the device can be increased, thereby increasing the light-emitting intensity.

本發明之又一目的係提供一種類似覆晶型的發 下=件封裝，其中一透明基板具有位於一發光二極體元 包含一粗糙面積之一底部表面。此一粗糙面積造$Another object of the present invention is to provide a flip-chip-like package, in which a transparent substrate has a bottom surface located on a light emitting diode element and including a rough area. This rough area makes $

五 過 量 、發明說明（5) 光線的折射率變化，進而 子效應或具特殃纟與# ^ 捉仏兔光二極體元件的外部 苻姝先學特性之發光元件。 體元件封裝，置中使用^ 2供一種類似覆晶型的發光二極 光二極體封裂成發白光粉的固晶材料，以使此發 之發光二極體封裝元件1，、匕長於該發光二極體波長顏色 本發明之又爯—曰& & # 極體元件封裝，里仍可-種類似覆晶型的發光二 粒發光方& & ^ , 傳、，先的加工方式達成仿覆晶型晶 祖^九万向的一發光二極體封裝元件。 根 發光二 光線的 接墊、 第二基 明基板 放於透 發光方 據以上所述 極體元件封 透明基板、 一第二發光 板電極、一 具有包含一 之目的’本發明提供一 裝’其包括一不 一發光二極體、 二極體焊接接墊 第一焊線、一第 種類似 吸收發光二極 一第一發光二 凹部之 凹部内 基板發 電性之一第一半導體層及 半導體 二極體 表面上及電性耦合於第 明基板之此 向地朝透明 二導電 導體層 性之一第二 。第一發光 一第一表 ，以使發 光。發光 具電性相 層，第二 焊接接墊 一半導體 、一第 二焊線 面及此 光二極 二極體 反於第 半導體 係形成 層。第 一基板 及一封 覆晶型的 體所發出 極體焊接 電極、一 膠。此透 極體係置 發光二 體仿覆晶型晶粒 包含具一第一導 一導電性之一第 接第一半 層係鄰 於發光 二發光 二極體之 二極體焊5. Excessive, description of the invention (5) The refractive index of light changes, and thus the sub-effect or the external light-emitting element with special characteristics and # ^ rabbit photodiode element 苻 姝 learning characteristics. Body element packaging, using ^ 2 in the center for a similar flip-chip type light-emitting diode light-emitting diode sealed into a white light-emitting solid crystal material, so that the light-emitting diode packaging element 1, which is longer than this Light-emitting diode wavelength color Another aspect of the present invention-said & &# polar element package, can still be-a kind of flip-chip type light-emitting diode light emitting square & & ^, first processing The method achieves a light-emitting diode package element with an overlying crystal type crystal structure. The light-emitting two-light contact pad and the second base substrate are placed on the light-transmitting side. According to the polar body element described above, the transparent substrate is sealed, a second light-emitting board electrode, and the purpose of the invention is to provide a package. Including a light-emitting diode, a first bonding wire of a diode welding pad, a first semiconductor layer and a semiconductor diode of the first kind in a recessed inner substrate similar to the light-absorbing diode and the first light-emitting dimple On the surface of the body and electrically coupled to the ground-facing substrate, one of the two layers of the transparent two conductive conductors is laminated. First luminescence A first watch to make light. The light-emitting electrical phase layer, the second bonding pad, a semiconductor, a second bonding wire surface, and the photodiode form a layer opposite to the semiconductor system. The first substrate and a flip-chip body emit polar electrode welding electrodes and a glue. The transmissive system includes a light-emitting diode body-covered crystal grain, which includes a first conductive layer, a first conductive layer, and a first half-layer layer adjacent to the light-emitting two-light-emitting diode.

第9頁 561564 五、發明說明（6) 接接墊係形成 極體之表面上 及第二基板電 焊線係電性 電極之間，及 接墊與第二基 發光二 合於第 形成於 一發光 係電性 間。封 墊、第 光二極 ，因此 二極體 明之發 強度。 低封膠 少。 第一發光二極 一焊線及第二 地向下朝透明 體表面上方的 焊接接墊擋住 光面積，進而 透明基板之凹 元件封裝的整 接接墊與 二發光二 封蓋發光 極體焊接 晶型晶粒 會被位於 及第二發 元件封裝 光二極體 進而使發 接墊相同的發光二 層。第一基板電極 之第一表面上。第 於與第 及電性耦 極係分別 連接於第 第二焊線 板電極之 體焊接接 知線。發 基板發光 第一發光 。藉本發 提高發光 部，可降 體厚度減 極體焊接 二半導體 透明基板 二極體焊 連接於第 膠係用以 二發光二 體係仿覆 其發光不 焊接接墊 光二極體 此外，發 的厚度， 第一基板 極體焊接 二極體、 接墊、第 發光方向 發光二極 光二極體 可增加發 係置放於 光二極體 5-4發明詳細說明 本發明提供一種類似覆晶型（flip_ch 光二極體元件封梦，甘》·τ p ρ 1 1 ke)的發 二極體。*光二極體；：Ϊ用於發出不同波長光線之發光 k Tt* 一往體係置放於一不吸收此 出光線的-透明基板之凹部，以使發光二極體：ί = 明基板上電極之間電性連接的焊接接=义體㈡Page 9561564 V. Description of the invention (6) The pad is formed on the surface of the pole body and between the electric electrodes of the second substrate electric welding line system, and the pad and the second base light-emitting are combined in the first light-emitting layer. Department of Electricity. The gasket, the first light pole, so the intensity of the light emitting diode. Low sealant. The first light emitting diode, a bonding wire, and the second ground downwardly facing the transparent body above the surface of the transparent body block the light area, and then the integral bonding pad packaged by the concave element of the transparent substrate and the two light emitting two cover light emitting body welding crystal. The type die is located on the second light emitting element to encapsulate the light diode, so that the light emitting two layers are the same. On the first surface of the first substrate electrode. The first and the second and the electric coupling electrodes are respectively connected to the body welding wires of the second welding wire plate electrode. The substrate emits light first. By increasing the light emitting part, the thickness can be reduced, and the polarized body can be welded. The second semiconductor transparent substrate is welded to the first adhesive system, and the two light-emitting two systems are used to imitate the light-emitting non-welding pads. The first substrate polar welding diodes, pads, and light emitting diodes in the first light emitting direction can increase the hair system to be placed on the photodiodes. 5-4 Detailed Description The present invention provides a flip-ch type Polar body element Feng Meng, Gan "τ p ρ 1 1 ke). * Photodiode ;: Ϊ used to emit light with different wavelengths k Tt * Placed in the recess of a transparent substrate that does not absorb this outgoing light, so that the light-emitting diode: ί = electrode on the substrate Welding between electrical connections = prosthetic ㈡

第10頁 561564Page 10 561564

力此 备光一極體元件封裝的發光面積，進而提高其發光 強度。再者’由於此發光二極體係置放於透明基板的凹部 中’故可降低封蓋此發光二極體的封膠厚度，而使此發光 二極體70件的整體封裝尺寸縮小。 本發明藉由以下較佳具體實施例配合所附圖式予以詳 細說明如下：Make use of the light-emitting area of the light-emitting polar element package to further increase its light-emitting intensity. Furthermore, since the light-emitting diode system is placed in the recess of the transparent substrate, the thickness of the sealant that covers the light-emitting diode can be reduced, and the overall package size of 70 light-emitting diodes can be reduced. The present invention is described in detail through the following preferred embodiments in combination with the accompanying drawings:

第二圖係根據本發明一第一較佳具體實施例的一類似 覆晶型的發光二極體元件封裝2 〇的截面示意圖。此類似 覆晶型的發光二極體元件封裝2 〇係包括一不吸收發光二 極體所發出光線的透明基板2 〇 〇、一發光二極體2 〇 4 、一第一發光二極體焊接接墊2 〇 5、一第二發光二極體 焊接接塾206 、一第一基板電極2〇7、一第二基板電 極2 0 8、一第一焊線2 〇 9 、一第二焊線2 1 0及一封 膠211。透明基板2〇〇具有設有一凹部202的一第 一表面20 1 ，且其材質可選自下列各種材料：玻璃、石 英、環氧樹脂、丙烯腈丁二烯苯乙烯共聚合物（The second figure is a schematic cross-sectional view of a similar flip-chip type light emitting diode device package 20 according to a first preferred embodiment of the present invention. This flip-chip-like light-emitting diode element package 20 includes a transparent substrate 200 that does not absorb light emitted by the light-emitting diode, a light-emitting diode 204, and a first light-emitting diode. Pad 2 05, a second light-emitting diode solder joint 206, a first substrate electrode 207, a second substrate electrode 208, a first bonding wire 209, and a second bonding wire 2 1 0 and a piece of glue 211. The transparent substrate 200 has a first surface 20 1 provided with a recess 202, and the material can be selected from the following materials: glass, quartz, epoxy resin, acrylonitrile butadiene styrene copolymer (

acrylonitrile butadiene styrene c ο ρ ο 1 y m e r )樹脂（A B S resin)、聚甲基丙烯酸甲酉旨（p〇iymethyl methacrylate) 、藍寶石（sapphire)或是熱塑性聚合物，如聚楓物（ polysulfones)、聚醚楓物（p〇iyethersulf〇nes)、聚醚醯 亞胺（polyetherimides)、聚醯亞胺（p〇lyimides)、聚醯 胺醯亞胺（poly amide - imide)、聚二曱苯硫化物（acrylonitrile butadiene styrene c ο ρ ο 1 ymer) resin (ABS resin), polymethyl methacrylate, sapphire, or thermoplastic polymer, such as polysulfones, polyether Maple (Polyethersulfones), polyetherimides, polyimides, polyamide-imide, polydiphenylbenzene sulfide (

561564 五、發明說明（8) . polyphenylene sulfide)及碳矽熱固型化合物（silic〇n — carbon thermosets)。發光二極體2 〇 4係置放於透明基 板200的凹部202内。發光二極體，2〇4包括具一第 ， 一導電性之一第一半導體層（未示出）及具電性相反於第 ： 一導電性之一第一導電性之一第二半導體層（未示出）， · 第二半導體層係鄰接第一半導體層。根據使用的半導體材 料的不同，此發光二極體2 0 4可發出不同波長的光線。. 透明基板2 0 0的凹部2 0 2較佳具有一平面底部，供置 · 放發光二極體2 0 4。此發光二極體2 〇 4係置放於透明· 基板2 0 0的凹部内，使其發光方向如同仿覆晶型晶粒發 光方向地朝向透明基板200的第一表面2〇1 。一固晶 _ 材料2 0 3 ，例如環氧樹脂，可被使用以固著發光二極體 2 0 4於透明基板2 0 〇。除此之外，固晶材料2 〇 3可 含有螢光粉，例如環氧樹脂摻混螢光粉，以將本發明的發 光二極體元件封裝成發白光或其它波長較此發光二極體所 發出光線長的光。561564 V. Description of the invention (8). Polyphenylene sulfide) and silicon-carbon thermosets. The light emitting diode 204 is placed in the recess 202 of the transparent substrate 200. Light-emitting diode, 204 includes a first semiconductor layer (not shown) having a first conductivity and a conductivity, and a second semiconductor layer having a conductivity opposite to the first: a conductivity, a first conductivity, and a second semiconductor layer (Not shown), the second semiconductor layer is adjacent to the first semiconductor layer. Depending on the semiconductor material used, this light emitting diode 204 can emit light of different wavelengths. The recessed portion 202 of the transparent substrate 200 preferably has a flat bottom for the light emitting diode 204 to be placed. The light emitting diode 204 is placed in a recess of the transparent substrate 200 so that the light emitting direction thereof is the same as the light emitting direction of the pseudo crystal grains toward the first surface 201 of the transparent substrate 200. A solid crystal material 203, such as epoxy resin, can be used to fix the light-emitting diode 204 to the transparent substrate 200. In addition, the solid crystal material 203 may contain fluorescent powder, such as epoxy resin mixed with fluorescent powder, so as to encapsulate the light-emitting diode element of the present invention to emit white light or other light-emitting diodes with a wavelength longer than that of the light-emitting diode. Long light emitted.

第一發光二極體焊接接墊2 〇 5係形成於發光二極體 2 〇 4的上方，並電性耦合於其第一半導體層。第二發光 二極體焊接接墊2 〇 6亦形成於發光二極體2 0 4的上方 ，並電性耦合於其第二半導體層。第一發光二極體焊接接 塾2 0 5及第二發光二極體焊接接墊2 〇 6可為兩層或多 層材質組合。第一基板電極2 〇 7係形成於透明基板2 〇 0的第一表面2 〇 1上，及第一焊線2 〇 9電性連接於第The first light emitting diode bonding pad 2 05 is formed above the light emitting diode 2 04 and is electrically coupled to the first semiconductor layer thereof. The second light-emitting diode soldering pad 206 is also formed above the light-emitting diode 204, and is electrically coupled to the second semiconductor layer. The first light-emitting diode welding joint 205 and the second light-emitting diode welding pad 206 can be a combination of two or more layers of materials. The first substrate electrode 2 07 is formed on the first surface 201 of the transparent substrate 2000, and the first bonding wire 2 09 is electrically connected to the first substrate 2

第12頁 561564 五、發明說明（9) 一發光二極體 。第二基板電 面2 0 1上， 體焊接接墊2 電極2 0 7與 板2 0 0上的 、電鍍等方法 或銘做成。封 封發光二極體 第二發光二極 焊線2 1 0。 焊接接 極2 0 及第二 0 6與第一 第二基板電 層而 焊線 墊2 8係 焊線 一金屬 〇第一 膠2 1 2 0 4 體焊接 1， 、第 接墊 0 5 形成 2 1 基板 極2 形成 2 0 例如 一發 2 0 與第一基板電極2 〇 7之間 於透明基板2 〇 〇的第一表 〇電性連接於第二發光二極 電極2 0 8之間。第一基板 〇 8可藉由圖案钱刻透明基 ’例如利用微影蝕刻、蒸鍍 9及第一焊線2 1 0可由金 裱氧樹脂，形成一封蓋以包 光二極體焊接接墊2 〇 5、 6 、第一焊線2 0 9及第二 第三圖係根據本發明 覆晶型的發光二極體元件 覆晶型發光二極元件封裝 所發出光線的透明基板3 第一發光二極體焊接接墊 接墊306、一第一基板 08、一第一焊線309 11。透明基板300的 梯狀側壁（s t e p - s h a p e d 0 2。除了此類似覆晶型 部3 0 2構造外，其其餘 類似覆晶型的發光二極體 一第二較佳 封裝3 〇的 3 0係包括 〇 0 ' -發 3 0 5、— 電極3 〇 7 、一第二焊 第一表面3 sidewa") 的發光二極 元件皆與第 元件封裝2 具體實施 截面示意 一不吸收 光二極體 第二發光 、一第二 線3 1 〇 〇 1包含3 0 2 1 體元件封 一較佳具 0的相應 例的一類似 圖。此類似 發光二極體 3 0 4、一 二極體焊接 基板電極3 及一封膠3 一具有一階 的一凹部3 裝3 〇的凹 體實施例的 元件相同。 561564 五、發明說明（10) 參 第 二 圖 j 透 明 基 壁 3 0 2 1 例 如 極 3 0 7 及 部 份 的 狀 側 壁 3 0 2 1 上 焊 線 3 1 0 的 南 度 步 縮 小 類 似 覆 晶 型 0 再 者 ， 一 固 晶 材 固 著 發 光 二 極 體 3 晶 材 料 3 0 3 可 含 以 將 本 發 明 的 發 光 此 發 光 二 極 體 所 發 時 5 基 板 背 面 亦 可 學 特 性 的 表 面 9 以 性 之 元 件 〇 板3 0 0的凹部3 呈二階梯狀的側壁 第二基板電極3 〇 。藉此，可降低第 ，進而降低膠體3 的發光二極體元件 料3 0 3 ，例如環 0 4於透明基板2 有螢光粉，例如環 二極體元件封裝成 出光線長的光。此 利用射出成型或壓 增加元件之外部量 0 2具有一階梯狀側 ’部份的第一基板電 8係分別形成於階梯 一焊線3 〇 9及第二 工1的厚度，以進一 隹于裝3 〇的整體厚度 氧樹脂，可被使用以 0 0 。除此之外，固 氧樹脂摻混螢光粉， 1 $光或其它波長較 外’在製造透明基板 鑄等方法做出具有光 子效應或特殊光學特Page 12 561564 V. Description of the invention (9) A light-emitting diode. It is made on the second substrate electrical surface 201 by bulk welding pad 2 electrode 207 and the plate 2000 by electroplating or other methods or inscriptions. Encapsulating the light-emitting diode The second light-emitting diode Bonding wire 2 1 0. The welding electrodes 2 0 and 2 0 6 are electrically connected to the first and second substrates, and the wire bonding pad 2 is a wire bonding 8 metal. The first adhesive 2 1 2 0 4 is a bulk welding 1, and the second pad 0 5 is formed 2 1 The substrate electrode 2 is formed 2 0. For example, a first table 0 between a round 20 and a first substrate electrode 2 07 on a transparent substrate 2 0 is electrically connected between the second light emitting diode electrode 2 0 8. The first substrate 08 can be engraved with a transparent substrate by patterning, for example, using lithographic etching, vapor deposition 9 and the first bonding wire 2 1 0. Gold resin can be used to form a cover to cover the photodiode bonding pad 2 〇5, 6, the first bonding wire 209, and the second and third figures are transparent substrates 3 of the flip-chip type light emitting diode device package according to the present invention. The polar body bonding pads 306, a first substrate 08, and a first bonding wire 309 11. The stepped sidewall of the transparent substrate 300 (step-shaped 02. Except for this structure similar to the flip-chip type 3 2, the rest is similar to the flip-chip type light-emitting diode-a second preferred package 3 0 of the 30 series The light emitting diode element including 0′-hair 3 0 5, —electrode 3 〇7, a second welding first surface 3 sidewa ") and the second element package 2 are shown in the specific implementation section, a non-absorbing light diode second A similar diagram of a light emitting, second line 3 1 001 including a corresponding example of a 30 2 1 body element sealed preferably with 0. This is similar to the light emitting diode 304, a diode welding substrate electrode 3 and a glue 3, a recessed embodiment with a first order, a recessed part 3, and a component of the recessed body 3 are the same. 561564 V. Description of the invention (10) Refer to the second picture j Transparent base wall 3 0 2 1 For example, pole 3 0 7 and part of the side wall 3 0 2 1 The south step of the bonding wire 3 1 0 is similar to the flip-chip type 0 Furthermore, a solid crystal material fixes the light-emitting diode 3 The crystal material 3 0 3 may contain the light-emitting diode of the present invention when emitted 5 The surface on the back surface of the substrate may also have a characteristic characteristic 9 A component that can be used 〇 The recessed part 3 of the plate 3 0 has two stepped sidewalls and the second substrate electrode 3 0. As a result, the light emitting diode element 3 0 3 of the colloid 3 can be reduced, for example, the ring 0 4 has fluorescent powder on the transparent substrate 2. For example, the ring diode element is packaged to emit light with long light. The external amount of the component is increased by injection molding or pressing. The first substrate 8 having a stepped side portion is formed in the thickness of the stepped bonding wire 3 009 and the thickness of the second step 1 to further reduce An oxygen resin with an overall thickness of 30 can be used with 0 0. In addition, the solid-oxygen resin is mixed with fluorescent powder, 1 $ light or other wavelengths are used.

例如，第四A圖係根據本發明一筮一卜从ώ 仆佩个知明 弟二較佳具體實施彳歹丨 的一類似覆晶型的發弁-t ^^ ' 攸/主幻' 尤一極體凡件封裝4 0的截面示意 透明基板400、一發光二極體404 及第四Β圖係此類似覆晶型的發光二極體元件封裝4 〇的 底視圖。此類似覆晶型的發光二極元件封裝4 〇 ^系包括 第一發光For example, the fourth A picture is a hairpin-like hairpin according to the present invention, which is a detailed implementation of the two best practices -t ^^ '尤 / 主 幻' especially The cross-section of the polar body package 40 shows a transparent substrate 400, a light-emitting diode 404, and a fourth B diagram, which are bottom views of this flip-chip-type light-emitting diode element package 40. This flip-chip-type light emitting diode device package 4 〇 ^ system includes the first light emitting

體焊接接墊4 0 5、一第二發光二極體焊接接墊4 〇 6、 一第一基板電極407、一第二基板電極4〇8 、一第一 焊線4 0 9、一第二焊線4 1 〇及一封膠4 1 1 。透明基 板4 0 0包括一具有包含一階梯狀側壁4 〇 2 1的一凹部Bulk welding pad 405, a second light emitting diode welding pad 406, a first substrate electrode 407, a second substrate electrode 408, a first bonding wire 409, a second Welding wire 4 1 0 and a piece of glue 4 1 1. The transparent substrate 4 0 0 includes a recessed portion including a stepped side wall 4 0 2 1

第14頁 561564 五、發明說明（ii) 4 0 2的第一 二表面4 1 5 4的下方。除 糙面積4 1 3 的相應元件相 4 1 3可由複 中，由於透明 1 3界面光折 的光線在内部 可提高此類似 度0 表面4 〇 。此粗糙 了透明基 之外，其 同。如第 數個球型 基板4 0 射率的變 全反射。 覆晶型的 1及具有一粗糖面 面積4 1 3係位於 板400的第二表 其餘元件皆與第二 四A圖及第四b圖所 凸面形成。在第三 0的第二表面4 1 化’將減少發光二 因此，藉此粗糙表 發光二極體元件封 積4 1 3的一第 發光二極體4 0 Φ 4 1 2具有粗 較佳具體實施例 示，此粗糙面積 較佳具·體實施例 2的粗糙面積4 &體4 0 4發出 面4 i 3的設計 I 4 0的發光強 _ 第五A圖係根據本發明一第四較佳具體實施例的一類 似覆晶型的發光二極體元件封裝5 〇的截面示意圖及第五 B圖係此類似覆aa型的如光一極體元件封裝5 〇的底視圖 。此類似覆晶型的發光二極元件封裝5 0係包括一透明基 板5 0 〇、一發光二極體5 〇 4、一第一發光二極體焊接 接墊5 0 5 、一第二發光二極體焊接接墊5 〇 6 、一第一 基板電極5〇了、一第二基板電極508、一第一焊線5 〇 9、一第二焊線5 1 〇及一封膠5 1 1 。透明基板5 〇 0包括一異有包含一階梯狀側壁5 〇 2 1的一凹部5 〇 2 的第一表面5 0 1及具有一粗綠面積5 1 3的一第二表面 5 1 2。此粗糙面積5 1 3係位於發光二極體5 4的下 方。除了透明基板5 0 0的第二表面5 1 2的粗糙面積5Page 14 561564 V. Description of the invention (ii) The first two surfaces of 4 0 2 are below the 4 1 5 4. The corresponding element phase 4 1 3 of the roughened area 4 1 3 can be restored. The light refraction at the transparent 13 interface can increase this similarity internally 0 surface 4 0. This is rough except for the transparent base, which is the same. Such as the number of spherical substrates with a total reflectance of 40. The flip-chip type 1 and an area with a coarse sugar surface 4 1 3 are located on the second table of the plate 400. The remaining elements are formed with the convex surfaces of the second and fourth figures A and B. On the second surface of the third 0, 4 1 ′ will reduce the light-emitting diode. Therefore, the rough surface of the light-emitting diode element encapsulates the first light-emitting diode 4 1 3 of the first light-emitting diode 4 0 Φ 4 1 2 which has a rough and specific shape. The embodiment shows that this rough area preferably has the rough area 4 of the embodiment 2 & body 4 0 4 emitting surface 4 i 3 design I 4 0 luminous intensity_ The fifth A diagram is a fourth comparison according to the present invention. A cross-sectional view of a flip-chip-type light-emitting diode element package 50 similar to the preferred embodiment and a fifth diagram B are bottom views of the aa-type photo-polar-element package 50 similar to the aa-type. This flip-chip-like light emitting diode element package 50 includes a transparent substrate 500, a light emitting diode 504, a first light emitting diode soldering pad 5 0, and a second light emitting diode. The polar body bonding pad 5 0 6, a first substrate electrode 5 0, a second substrate electrode 508, a first bonding wire 5 0 9, a second bonding wire 5 1 0, and an adhesive 5 1 1. The transparent substrate 5 0 0 includes a first surface 5 0 1 different from a recessed portion 5 0 2 including a stepped side wall 5 0 2 1 and a second surface 5 1 2 having a rough green area 5 1 3. The rough area 5 1 3 is located below the light emitting diode 5 4. Except for the rough surface 5 of the second surface 5 1 2 of the transparent substrate 5 0 0

561564 五、發明說明（12) 1 3係由複數個三角錐體組成之外， 二極體元件封裝5 〇的其餘元件皆二二J晶=的發光 的類似覆晶型的發光二極體元件穿車二:圭：體貫施例 。如同第三較佳具體實施例，此實m ::應元件相同 子效應的特性。再者，參第五A圖及？也二有=卜部量 〇 〇的第二表面5 1 2的粗糙 弟U:基板5 體，從遠處觀看時具有特殊的方：以的角錐 。…生之而求，製成不同的多面錐體，甚至是圓錐體 似Ρ Ϊ Α圖係根據本發明一第五較佳具體實施例的一類 μ型，的發光二極體兀件封裝6 0的截面示意圖及第六 。\ it類似覆晶型的發光二極體元件封裝6 〇的底視圖 柘R η員似覆晶型的發光二極元件封裝6 0係包括一透明基 接墊、一發光二極體604、一第一發光二極體烊接 美你带5、一第二發光二極體焊接接墊6〇6、一第一 g 9、極6 〇 7、一第二基板電極6 〇 8、一第一焊線6 〇包括:第二焊線6 1 0及一封膠6 1 1 。透明基板6 〇 的第一主具有包含一階梯狀側壁6 0 2 1的一 ω部6 0 2 619 "面601及具有一粗糙表面613的一第二表面 方。。此粗輪表面β 1 3係位於發光二極體6 0 4的下 =了透明基板6 〇 〇的第二表面6 1 2的粗糙表面6 體元^由f數同心圓形成之外’此類似覆晶型的發光二極 70 4封裝6 〇的其餘元件皆與第三較佳具體實施例的類561564 V. Description of the invention (12) 1 3 is composed of a plurality of triangular pyramids, and the rest of the diode element package 5 is composed of two J-shaped light-emitting diode-like light-emitting diode elements. By car 2: Gui: Implementing examples. As with the third preferred embodiment, the real m :: response element has the same sub-effect characteristics. Moreover, see Figure 5A and? There is also a rough surface of the second surface 5 1 2 = 部 部 量 〇 〇 U: the substrate 5 body, when viewed from a distance, has a special square: a pyramid. … For the sake of life, made different polyhedral cones, or even cones like P Ϊ A is a type of μ-type light emitting diode element package according to a fifth preferred embodiment of the present invention 6 0 Schematic cross-section and sixth. \ It is a bottom view of a flip-chip-like light-emitting diode device package 6 〇 R η-like flip-chip-type light-emitting diode device package 6 0 series includes a transparent base pad, a light-emitting diode 604, a The first light-emitting diode is connected to you, a second light-emitting diode soldering pad 606, a first g 9, a pole 6 07, a second substrate electrode 6 08, a first The bonding wire 6 〇 includes: a second bonding wire 6 1 0 and a piece of adhesive 6 1 1. The first main body of the transparent substrate 6 0 has an ω portion 6 0 2 619 " surface 601 including a stepped side wall 6 0 2 1 and a second surface side having a rough surface 613. . The rough surface β 1 3 is located under the light-emitting diode 6 0 4 = the rough surface 6 2 of the second surface 6 1 2 of the transparent substrate 6. The voxels ^ are formed by f-number concentric circles. This is similar The flip-chip type light-emitting diode 70 4 package 6 0 and other components are similar to the third preferred embodiment.

561564 五、發明說明（13) - 似覆晶型的發光二極體元件封裝4 〇的相應元件相同。561564 V. Description of the invention (13)-The corresponding components of the flip-chip type light emitting diode device package 4 are the same.

在第五較佳具體實施例中，由於透明基板6 〇 〇的 二表面6 1 2的粗糙表面6 1 3界面光折射率的變化 減少發光二極體6 0 4發出的光線在内部反射及被透明義 板6 0 0吸收的機會。同樣地，透明基板6 〇 〇的第二$ 面6 1 2的粗糙表面6 1 3的複數個同心圓，根據透^ ^ 板6 0 0材質之折射率與粗糖表面6工3之角=月J 結構可設計成可具有聚光、散光、平行光或其它光學特性 之元件。因此，藉此粗糙表面6 1 3的設計可提高此類似 覆晶型的發光二極體元件封裝6 〇的發光強度，並具備 殊之光學特性。 h另一 f面，本發明之第三至第五具體實施例亦可根據 第一具體貫施例的類似覆晶型的發光二極體元件封裝2 〇 的結構加以變化，即其透明基板2 〇 〇與其第一表面2 〇 1相反的一第二表面部份面積亦可設計成如第三至第五且 體實施例之粗糙面積。 〃 根據本發明提供的類似覆晶型的發光二極體元件封裝 ’發光二極體的發光方向係仿覆晶型晶粒發光方向地向下 月向透月基板餐光二極體發出的光線將不會被位於其上 方接接塾擔住。因此，藉本發明可增加發光面積，進 而提问發光強&。再者，發光二極體係置放於透明基板的In the fifth preferred embodiment, the change in the refractive index of the interface 6 1 3 due to the rough surface 6 1 2 of the two surfaces 6 1 2 of the transparent substrate 6 reduces the light emitted from the light emitting diode 6 0 4 to be reflected internally and be affected by the light. Opportunity for transparent prosthesis 6 0 0 absorption. Similarly, the plurality of concentric circles on the rough surface 6 1 3 of the second surface 6 1 2 of the transparent substrate 6 00, according to the refractive index of the material of the transparent plate 6 0 0 and the angle of the raw sugar surface 6 3 = month The J structure can be designed as an element that can have condensing, astigmatic, parallel, or other optical characteristics. Therefore, the design of the rough surface 6 1 3 can improve the luminous intensity of this flip-chip-type light-emitting diode element package 60 and has special optical characteristics. On the other f side, the third to fifth specific embodiments of the present invention can also be changed according to the structure of the flip-chip-like light-emitting diode element package 2 of the first specific embodiment, that is, the transparent substrate 2 The area of a second surface portion opposite to the first surface 001 can also be designed as the rough area of the third to fifth embodiments.覆 According to the present invention, a flip-chip-like light-emitting diode device package is provided. The light-emitting direction of the light-emitting diode is the light emitting direction of the flip-chip crystal. It will not be carried by the relays located above it. Therefore, the light emitting area can be increased by the present invention, and the light emission intensity & Furthermore, the light-emitting diode system is placed on a transparent substrate.

第17頁 561564 五、發明說明（14) 凹部，可降低封蓋此發光二極體的封膠厚度，進一步縮小 發光二極體元件封裝的整體厚度。 以上所述僅為本發明之較佳實施例而已，並非用以限 定本發明之申請專利範圍；凡其它未脫離本發明所揭示之 精神下所完成之等效改變或修飾，均應包含在下述之專利 申請範圍内。Page 17 561564 V. Description of the invention (14) The recess can reduce the thickness of the sealant covering the light emitting diode, and further reduce the overall thickness of the light emitting diode element package. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application.

第18頁 561564 圖式簡單說明 第一 A圖係一傳統藍光發光二極體元件封裝的截面示 意圖； 第一 B圖係第一 A圖之傳統藍光發光二極體的頂視圖； 第二圖係本發明的第一較佳具體實施例的截面示意圖 第三圖係本發明的一第二較佳具體實施例的截面示意 圖， 第四A圖係本發明的一第三較佳具體實施例的截面示 意圖； 第四B圖係本發明的第三較佳具體實施例的頂視圖； 第五A圖係本發明的一第四較佳具體實施例的截面示 意圖； 第五B圖係本發明的第四較佳具體實施例的頂視圖； 第六A圖係本發明的一第五較佳具體實施例的截面示 意圖；及Page 561564 The schematic diagram A is a schematic cross-sectional view of a conventional blue light emitting diode device package. The first diagram B is a top view of the conventional blue light emitting diode of the first diagram A. The second diagram is Sectional schematic diagram of the first preferred embodiment of the present invention. The third diagram is a schematic diagram of a second preferred embodiment of the present invention. The fourth diagram A is a section of a third preferred embodiment of the present invention. The fourth diagram B is a top view of the third preferred embodiment of the present invention. The fifth diagram A is a schematic cross-sectional view of a fourth preferred embodiment of the present invention. The fifth B diagram is the first diagram of the fourth preferred embodiment of the present invention. Top view of the four preferred embodiments; FIG. 6A is a schematic cross-sectional view of a fifth preferred embodiment of the present invention; and

IIIIII

II

I 第19頁 561564 圖式簡單說明 第六B圖係本發明的第五較佳具體實施例的頂視圖。 主要部份之代表符號： 10 藍光發光二極體元件封裝 1 0 0 不透明基板 10 1 固晶材料 10 2 藍寶石基材 10 4 N型氮化鎵化合物 10 6 P型氮化鎵化合物 10 8 透明電極 110 N型焊接接墊 112 P型焊接接墊 114 第一電極 116 第二電極 12 0 焊線 12 2 封膠 2 0 類似覆晶型的發光二極體元件封裝 2 0 0 遂明基板 2 0 1 第一表面 2 0 2 凹部 2 0 3 固晶材料 2 0 4 發光二極體 2 0 5 第一發光二極體焊接接墊 2 0 6 第二發光二極體焊接接墊I P.19 561564 Brief Description of Drawings Figure 6B is a top view of a fifth preferred embodiment of the present invention. Main symbols: 10 Blue light emitting diode device package 1 0 0 Opaque substrate 10 1 Solid crystal material 10 2 Sapphire substrate 10 4 N-type gallium nitride compound 10 6 P-type gallium nitride compound 10 8 Transparent electrode 110 N-type solder pad 112 P-type solder pad 114 First electrode 116 Second electrode 12 0 Welding wire 12 2 Sealant 2 0 Light-emitting diode device package similar to flip-chip type 2 0 0 Suiming substrate 2 0 1 First surface 2 0 2 Recess 2 0 3 Solid crystal material 2 0 4 Light emitting diode 2 0 5 First light emitting diode soldering pad 2 0 6 Second light emitting diode soldering pad

第20頁 561564 圖式簡單說明 2 0 7 第 一 基 板 電 極 2 0 8 第 二 基 板 電 極 2 0 9 第 一 焊 線 2 1 0 第 — 焊 線 2 1 1 封 膠 3 0 類 似 覆 晶 型 的 發 光 二 極 元 3 0 0 透 明 基 板 3 0 1 第 一 表 面 3 0 2 階 梯 狀 側壁 3 0 3 固 晶 材 料 3 0 4 發 光 二 極 體 3 0 5 第 一 發 光 二 極 體 焊 接 接 塾 3 0 6 第 二 發 光 二 極 體 焊 接 接 墊 3 0 7 第 一 基 板 電 極 3 0 8 第 二 基 板 電 極 3 0 9 第 一 焊 線 3 1 0 第 二 焊 線 3 1 1 封 膠 3 0 2 ： L階 梯 狀 側 壁 4 0 類 似 覆 晶 型 的 發 光 二 極 元 4 0 0 透 明 基 板 4 0 1 第 _ — 表 面 4 0 2 凹 部 4 0 4 發 光 極 體Page 20561564 Brief description of the drawing 2 0 7 First substrate electrode 2 0 8 Second substrate electrode 2 0 9 First bonding wire 2 1 0 First — bonding wire 2 1 1 Sealant 3 0 Similar to flip-chip type Polar element 3 0 0 Transparent substrate 3 0 1 First surface 3 0 2 Stepped sidewall 3 0 3 Solid crystal material 3 0 4 Light-emitting diode 3 0 5 First light-emitting diode solder joint 3 0 6 Second light-emitting Diode welding pad 3 0 7 First substrate electrode 3 0 8 Second substrate electrode 3 0 9 First bonding wire 3 1 0 Second bonding wire 3 1 1 Sealant 3 0 2: L stepped sidewall 4 0 Similar Flip-chip type light emitting diode 4 0 0 transparent substrate 4 0 1 — — surface 4 0 2 recess 4 0 4 light emitting body

第21頁 561564 圖式簡單說明 4 0 5 第 一 發 光 二 極 體 焊 接 接 墊 4 0 6 第 二 發 光 二 極 體 焊 接 接 塾 4 0 7 第 一 基 板 電 極 4 0 8 第 二 基 板 電 極 4 0 9 第 一 焊 線 4 1 0 第 二 焊 線 4 1 1 封 膠 4 1 2 第 二 表 面 4 1 3 粗 糙 面 積 4 0 2 1階梯狀側壁 5 0 類似覆晶型的發光二極元件封裝 5 0 0 透明基板 5 0 1 第一表面 5 0 2 凹部 5 0 4 發光二極體 5 0 5 第一發光二極體焊接接墊 5 0 6 第二發光二極體焊接接墊 507 第一基板電極 508 第二基板電極 5 0 9 第一焊線 5 10 第二焊線 5 11 封膠 5 12 第二表面 5 13 粗糖面積Page 21 561564 Brief description of drawings 4 0 5 First light emitting diode welding pad 4 0 6 Second light emitting diode welding pad 4 0 7 First substrate electrode 4 0 8 Second substrate electrode 4 0 9 A bonding wire 4 1 0 Second bonding wire 4 1 1 Sealant 4 1 2 Second surface 4 1 3 Rough area 4 0 2 1 Stepped sidewall 5 0 Similar to a flip-chip type light emitting diode package 5 0 0 Transparent substrate 5 0 1 First surface 5 0 2 Recess 5 0 4 Light emitting diode 5 0 5 First light emitting diode soldering pad 5 0 6 Second light emitting diode soldering pad 507 First substrate electrode 508 Second substrate Electrode 5 0 9 First bonding wire 5 10 Second bonding wire 5 11 Sealant 5 12 Second surface 5 13 Coarse sugar area

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Claims (1)

561564 六、申請專利範圍 1 · 一種類似 一透明基板 面及具有不吸收 覆晶型 ’該透 發光二 一發光二極體，係 使該發光二極體 基板發光，該發 導體層及具電性 第二半導體層， 一第一發光 之一表面上，及 一第二發光 之與該第一發光 耦合於該第二半 一第一基板 以仿 的發光 明基板 極體所 置放於 覆晶型晶粒發 二極體元件封裝 具有包含一凹部 發出光 該透明 光二極體包含具一第 相反於該第一 該第二半導體 二極體焊接接 電性耦合於該 二極體焊接接 二極體悍接接 導體層； 電極 導電性 層鄰接 墊，係 第一半 墊，係 墊相同 線之特性 基板之該 光方向地 一導電性 之一第二 該第一半 形成於該 導體層； 形成於該 之該表面 ’其包 之—第 凹部内 朝向該 之—第 導電性 導體層 發光^ 括 表 發光 上 及 ，以 透明 ~半 之一 極體 極體 電性 第-一基板電極， 上； 係形成於該透明基板之該第— 表面 係形成於該透明基板之該第— ^ 表面 一第一焊線 係電 塾與遠苐一基板電極之 一第二焊線，係電 電極之 封膠，係用以封 該第二發 墊與該第 體焊接接墊 該第二焊線 性連接於該第一發光二極 間； 性連接於該第二發光二極 間；及 蓋該發光二極體、該第一發朵一 ^ Al* —k 極 光二極體焊接接墊、該第一焊線及 體焊接接 體焊接接561564 6. Scope of patent application 1 · A transparent substrate surface with a non-absorptive flip-chip type 'The transmissive light-emitting 21 light-emitting diode is used to make the light-emitting diode substrate emit light, and the light-emitting conductor layer is electrically conductive. A second semiconductor layer on a surface of a first luminescence, and a second luminescence coupled to the first luminescence on the second half-first substrate, the imitation light-emitting bright substrate polar body is placed in a flip-chip type The die-emitting diode device package includes a recess that emits light. The transparent light diode includes a first semiconductor semiconductor diode opposite to the first semiconductor diode. The second semiconductor diode is electrically coupled to the diode soldering diode. The electrode conductive layer is adjacent to the pad, which is a first half pad, which is a conductive one in the light direction of the characteristic substrate of the same line. The second and first half are formed in the conductive layer; The surface of the surface—its inside—the first concave portion faces toward—the first conductive conductor layer emits light ^ including the surface light emission and transparent to one-half the polar body The first electrode is formed on the first surface of the transparent substrate, and the first surface is formed on the first surface of the transparent substrate. The sealant of the electric electrode is used to seal the second hair pad and the first body welding pad, and the second welding is linearly connected between the first light emitting diode; sexually connected between the second light emitting diode; and a cover The light-emitting diode, the first hairpin Al * -k aurora diode welding pad, the first welding wire and the body welding joint welding 561564 六、申請專利範圍 2. 如申請專利範圍第1項所述之類.似覆晶型的發光二 極體元件封裝，其中更包含一固晶材料，係用以將該發光 二極體固著於該透明基板之該凹部内。 3. 如申請專利範圍第1項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板之該凹部包含一階梯 狀側壁，且部份該第一電極及部份該第二電極係分別形成 於該階梯狀側壁上。 4. 如申請專利範圍第2項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板之該凹部包含一階梯 狀側壁，且部份該第一電極及部份該第二電極係分別形成 於該階梯狀側壁上。 5. 如申請專利範圍第1項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板包含一第二表面，該 第二表面包含一粗糙面積係位於該發光二極體下方。 6. 如申請專利範圍第2項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板包含一第二表面，該 第二表面包含一粗糙面積係位於該發光二極體下方。 7. 如申請專利範圍第5項所述之類似覆晶型的發光二561564 6. Scope of patent application 2. As described in item 1 of the scope of patent application. The flip-chip-like light-emitting diode element package further includes a solid-state material for fixing the light-emitting diode. Landing in the recess of the transparent substrate. 3. The flip-chip-type light-emitting diode device package similar to the one described in the scope of the patent application, wherein the recess of the above-mentioned transparent substrate includes a stepped side wall, and part of the first electrode and part of the first electrode Two electrode systems are respectively formed on the stepped sidewall. 4. The flip-chip-like light-emitting diode device package described in item 2 of the scope of the patent application, wherein the recess of the aforementioned transparent substrate includes a stepped side wall, and part of the first electrode and part of the first electrode Two electrode systems are respectively formed on the stepped sidewall. 5. The flip-chip type light emitting diode device package similar to the one described in the scope of the patent application, wherein the transparent substrate includes a second surface, and the second surface includes a rough area located on the light emitting diode. Below. 6. The flip-chip-type light-emitting diode device package as described in item 2 of the patent application scope, wherein the transparent substrate includes a second surface, and the second surface includes a rough area located on the light-emitting diode. Below. 7. Similar flip-chip type light-emitting diodes as described in item 5 of the scope of patent application 第25頁 561564 六、申請專利範圍 極體元件封裝，其中上述之透明基板之該第二表面之該粗 糙面積係由一同心圓輪摩形成。 8. 如申請專利範圍第6項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板之該第二表面之該粗 糙面積係由一同心圓輪廓形成。 9. 如申請專利範圍第5項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板之該第二表面之該粗 糙面積係由複數個球型凸面形成。 1 0 .如申請專利範圍第6項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板之該第二表面之該粗 糙面積係由複數個球型凸面形成。 11.如申請專利範圍第5項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板之該第二表面之該粗 糙表面係由複數個多面體形成。 1 2.如申請專利範圍第6項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板之該第二表面之該粗 糙表面係由複數個多面體形成。 1 3.如申請專利範圍第11項所述之類似覆晶型的發光Page 25 561564 6. Scope of patent application For polar element package, the rough area of the second surface of the above-mentioned transparent substrate is formed by concentric circular wheel rubbing. 8. The flip-chip-type light-emitting diode device package similar to that described in item 6 of the scope of the patent application, wherein the rough area of the second surface of the transparent substrate is formed by a concentric circular outline. 9. The flip-chip-type light-emitting diode device package as described in item 5 of the scope of the patent application, wherein the rough area of the second surface of the transparent substrate is formed by a plurality of spherical convex surfaces. 10. The flip-chip-type light emitting diode device package as described in item 6 of the scope of the patent application, wherein the rough area of the second surface of the transparent substrate is formed by a plurality of spherical convex surfaces. 11. The flip-chip-type light emitting diode device package as described in item 5 of the scope of the patent application, wherein the rough surface of the second surface of the transparent substrate is formed by a plurality of polyhedrons. 1 2. The flip-chip-type light-emitting diode device package as described in item 6 of the scope of the patent application, wherein the rough surface of the second surface of the transparent substrate is formed by a plurality of polyhedrons. 1 3. Luminescence of similar flip-chip type as described in item 11 of the scope of patent application 第26頁 561564 六、申請專利範圍 二極體元件封裝，其中上述之多面體為一三角錐體。 1 4 ·如申請專利範圍第1 2項所述之類似覆晶型的發光 二極體元件封裝，其中上述之多面體為一三角錐體。 1 5 ·如申請專利範圍第1項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板係選自下列材質：玻 璃、石英、環氧樹脂、丙烯腈丁二烯苯乙烯共聚合物（ acrylonitrile butadiene styrene copolymer)樹脂（ABS resin)、聚曱基丙烯酸曱酯（p〇iymethyl methacrylate) 、藍寶石（sapphire)、聚楓物（polysulfones)、聚醚楓物 (polyethersulfones)、聚醚醯亞胺（polyetherimides)、 聚醯亞胺（polyimides)、聚醯胺醯亞胺（polyamide-imide )、聚二曱苯硫化物（polyphenylene sulfide)及碳石夕熱固 型化合物（silicon-carbon thermosets)。 1 6 .如申請專利範圍第2項所述之類似覆晶型的發光二 極體元件封裝，其中上述之透明基板係選自下列材質：玻 璃、石英、環氧樹脂、丙烯腈丁二烯苯乙烯共聚合物（ acrylonitrile butadiene styrene copolymer)樹月旨（ABS resin)、聚曱基丙晞酸甲 S旨（polymethyl methacrylate) 、藍寶石（sapphire)、聚楓物（polysulfones)、聚 ϋ楓物 (polyethersulfones)、聚醚醯亞胺（polyetherimides)、 聚龜亞胺（polyimides)、聚醯胺醯亞胺（polyamide-imidePage 26 561564 6. Scope of patent application Diode device package, in which the above-mentioned polyhedron is a triangular pyramid. 14 · The flip-chip-like light emitting diode device package as described in item 12 of the scope of patent application, wherein the polyhedron is a triangular pyramid. 1 5 · A flip-chip-like light-emitting diode device package as described in item 1 of the scope of the patent application, wherein the transparent substrate is selected from the following materials: glass, quartz, epoxy resin, acrylonitrile butadiene benzene Acrylonitrile butadiene styrene copolymer resin (ABS resin), polymethyl methacrylate, sapphire, polysulfones, polyethersulfones, polyethersulfones Polyetherimides, polyimides, polyimide-imide, polyphenylene sulfide, and silicon-carbon thermosetting compounds thermosets). 16. The flip-chip-like light-emitting diode device package described in item 2 of the scope of the patent application, wherein the transparent substrate is selected from the following materials: glass, quartz, epoxy resin, acrylonitrile butadiene benzene Acrylonitrile butadiene styrene copolymer (ABS resin), polymethyl methacrylate, sapphire, polysulfones, polyethersulfones ), Polyetherimides, polyimides, polyamide-imide 第27頁 561564 六、申請專利範圍 ⑴ 曱笨硫化物（polyphenylene sulfide)及碳石夕熱固 型4匕合物 f。· 1 · 、s1丄1con — carbon thermosets )° 1 7 ·如申請專利範圍第2項所述之類似覆晶型的發光二 奴凡仵封裝，其中上述之固晶材料更包含螢光粉。 _ 18·如申請專利範圍第17項所述之類似覆晶型的發光 二極體元件封裝，其中上述之透明基板之該凹部包含一階 $狀側壁’且部份該第一電極及部份該第二電極係分別形 成於該階梯狀側壁上。 1 9 ·如申請專利範圍第丨7項所述之類似覆晶型的發光 =極體元件封裝，其中上述之透明基板係選自下列材質： 玻璃、石英、環氧樹脂、丙烯腈丁二烯苯乙烯共聚合物（ acrylonitrile butadiene styrene copolymer)樹脂（ABS resin)、聚曱基丙婶酸曱酯（p〇lymethyl methacrylate) 、藍寶石（sapphire)、聚楓物（polysulfones)、聚醚楓物 (polyethersulfones)、聚醚酸亞胺（polyetherimides)、Page 27 561564 6. Scope of patent application ⑴ Polyphenylene sulfide and carbonite thermosetting type 4 d compound f. · 1 ·, s1 丄 1con — carbon thermosets) ° 1 7 · The same flip-chip type light-emitting diodes as described in item 2 of the patent application scope, wherein the above-mentioned solid crystal material further includes phosphor powder. _ 18 · The flip-chip-like light-emitting diode device package described in item 17 of the scope of the patent application, wherein the recess of the above-mentioned transparent substrate includes a first-order $ -shaped side wall and part of the first electrode and part The second electrode systems are formed on the stepped sidewalls, respectively. 1 9 · The flip-chip-like light-emitting = polar body package described in item 7 of the scope of patent application, wherein the transparent substrate is selected from the following materials: glass, quartz, epoxy resin, acrylonitrile butadiene Acrylonitrile butadiene styrene copolymer resin (ABS resin), polymethyl methacrylate, sapphire, polysulfones, polyethersulfones ), Polyetherimides, 聚醯亞胺（polyimides)、聚醯胺醯亞胺（polyamide-imide )、聚二曱苯硫化物（polyphenylene sulfide)及碳矽熱固 型化合物(s i 1 icon-carbon thermosets) ° 2 0 ·如申請專利範圍第1 8項所述之類似覆晶型的發光 二極體元件封裝，其中上述之透明基板係選自下列材質：Polyimides, polyamide-imide, polyphenylene sulfide, and silicon-silicon thermosets (si 1 icon-carbon thermosets) ° 2 0 · such as The flip-chip-type light emitting diode device package described in item 18 of the scope of the patent application, wherein the transparent substrate is selected from the following materials: 第28頁 561564 六、申請專利範圍 玻璃、石英、環氧樹脂、丙烯腈丁二烯苯乙烯共聚合物（ acrylonitrile butadiene styrene copolymer )拉十月旨（A B S resin)、聚曱基丙烯酸曱酯（polymethyl methacrylate) 、藍寶石（sapphire)、聚楓物（polysulfones)、聚 St 楓物 (polyethersulfones)、聚醚醯亞胺（polyetherimides)、 聚醯亞胺（polyimides)、聚酷胺醯亞胺（polyamide-imide )、聚二曱苯硫化物（polyphenylene sulfide)及碳石夕熱固 型 4匕合物（silicon-carbon thermosets)。Page 28 561564 6. Scope of patent application: Glass, quartz, epoxy resin, acrylonitrile butadiene styrene copolymer (ABS resin), polymethyl acrylate (polymethyl) methacrylate), sapphire, polysulfones, polySt sulfones, polyetherimides, polyimides, polyamide-imide ), Polyphenylene sulfide (polyphenylene sulfide) and carbon-stone thermosetting 4 dagger compounds (silicon-carbon thermosets). 第29頁Page 29
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TWI385834B (en) * 2009-02-06 2013-02-11 Yu Nung Shen Light emitting diode chip package and manufacturing method thereof
TWI424587B (en) * 2008-06-30 2014-01-21 Luxtaltek Corp Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures
TWI464908B (en) * 2012-08-30 2014-12-11 Formosa Epitaxy Inc Light emitting device
US9166116B2 (en) 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424587B (en) * 2008-06-30 2014-01-21 Luxtaltek Corp Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures
TWI385834B (en) * 2009-02-06 2013-02-11 Yu Nung Shen Light emitting diode chip package and manufacturing method thereof
US9166116B2 (en) 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device
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