Claims (1)
559978 六、申請專利範圍 1 · 一種晶圓移除厚度的檢測方法’ 提供一晶圓； 於該晶圓上設置複數個雷射標記’ 分別設置於該晶圓之不同深度中； 對該晶圓進行一研磨製程； 對該晶圓進行一研磨後清洗製程， 檢視該些雷射標記，以讀取該晶圓 2·如申請專利範圍第1項所述之晶S 方法’其中該些雷射標記包括設置於該 3 ·如申請專利範圍第1項所述之晶U 方法，其中該些雷射標記至少包括一第 案與一第三圖案，且該第一圖案、該第 案分別代表一第一深度、一第二深度與 第一深度小於該第二深度，且該第二深 度。 4.如申請專利範圍第3項所述之晶D 方法，其中在檢視該些雷射標記，以讀 厚度之步驟中，該第一圖案消失，而該 圖案仍存在，則表示該移除厚度在該第 度之間。 5 ·如申請專利範圍第1項所述之晶[ 方去’其中該晶圓包括裸晶圓。 6 ·如申請專利範圍第1項所述之晶丨 方去’其中該晶圓包括回收晶圓。 其中該方法包括： 每一該些雷射標記 以及 之一移除厚度。 ]移除厚度的檢測 晶圓之非元件區。 J移除厚度的檢測 一圖案、一第二圖 二圖案與該第三圖 一第三深度，且該 度小於該第三深 3移除厚度的檢測 取該晶圓之該移除 第二圖案與該第三 一深度與該第二深 ϋ移除厚度的檢測 s移除厚度的檢測 559978 六、申請專利範圍 7 · —種晶圓移除速率的檢測方法，其中該方法包括： 提供一晶圓； 於該晶圓上設置複數個雷射標記，每一該些雷射標記 分別設置於該晶圓之不同深度中； 對該晶圓進行一研磨製程，並經過一研磨時間； 對該晶圓進行一研磨後清洗製程； 檢視該些雷射標記，以讀取該晶圓之一移除厚度；以 及 ， 根據該研磨時間與該移除厚度求出該晶圓之一移除速 率 〇 8·如申請專利範圍第7項所述之晶圓移除速率的檢測 方法’其中該些雷射標記包括設置於該晶圓之非元件區。 9 ·如申請專利範圍第7項所述之晶圓移除速率的檢測 方法，其中該些雷射標記至少包括一第一圖案、一第二圖 案與一第三圖案，且該第一圖案、該第二圖案與該第三圖 案分別代表一第一深度、一第二深度與一第三深度，且該 第一深度小於該第二深度，且該第二深度小於該第三深 度。 一 I 〇 ·如申請專利範圍第9項所述之晶圓移除速率的檢測 方法’其中在檢視該些雷射標記，以讀取該晶圓之該移除 厚度之步驟中，該第一圖案消失，而該第二圖案與該第三 圖案仍存在’·則表示該移除厚度在該第一深度與該第二深 度之間。 一 II ·如申請專利範圍第7項所述之晶圓移除速率的檢測559978 VI. Scope of patent application1. A method for detecting the thickness of a wafer removed 'provide a wafer; set a plurality of laser marks on the wafer' and set them at different depths of the wafer; A polishing process is performed; a post-polishing cleaning process is performed on the wafer, and the laser marks are inspected to read the wafer 2. The crystal S method described in item 1 of the scope of the patent application, where the lasers are The mark includes the crystal U method as described in item 1 of the scope of the patent application, wherein the laser marks include at least a first case and a third pattern, and the first pattern and the third case respectively represent a The first depth, a second depth, and the first depth are smaller than the second depth, and the second depth. 4. The method of crystal D as described in item 3 of the scope of patent application, wherein in the step of inspecting the laser marks to read the thickness, the first pattern disappears, and the pattern still exists, which indicates the removed thickness. Between this first degree. 5 · The crystal as described in item 1 of the patent application [方 去 ', wherein the wafer includes a bare wafer. 6 · The crystal according to item 1 of the scope of patent application, wherein the wafer includes a recovered wafer. The method includes: removing each of the laser marks and one of the thicknesses. ] Remove the non-element area of the inspection wafer of thickness. J. Detecting a pattern, a second figure, a second pattern, and a third figure, a third depth of the removed thickness, and the degree is less than the third depth. 3 Detecting the removed thickness of the wafer, taking the removed second pattern of the wafer. And the third depth and the second deep depth removal thickness detection s removal thickness detection 559978 6. Patent application scope 7 · A method for detecting wafer removal rate, wherein the method includes: providing a crystal Round; set a plurality of laser marks on the wafer, each of these laser marks are respectively set at different depths of the wafer; perform a grinding process on the wafer, and pass a grinding time; Perform a post-polishing cleaning process; inspect the laser marks to read one of the wafer's removed thicknesses; and, based on the polishing time and the removed thickness, determine one of the wafer's removal rates. • The method for detecting a wafer removal rate according to item 7 of the scope of the patent application, wherein the laser marks include a non-element area disposed on the wafer. 9. The method for detecting a wafer removal rate according to item 7 of the scope of the patent application, wherein the laser marks include at least a first pattern, a second pattern, and a third pattern, and the first pattern, The second pattern and the third pattern respectively represent a first depth, a second depth, and a third depth, and the first depth is smaller than the second depth, and the second depth is smaller than the third depth. -I 0. The method for detecting a wafer removal rate as described in item 9 of the scope of the patent application, wherein in the step of inspecting the laser marks to read the removed thickness of the wafer, the first The pattern disappears, and the second pattern and the third pattern still exist ', which indicates that the removed thickness is between the first depth and the second depth. I II. Inspection of wafer removal rate as described in item 7 of the patent application
^846twf.ptd 第16頁 559978 六、申請專利範圍 — 方法’其中該晶圓包括裸晶圓。 12·如申請專利範圍第7項所述之晶圓移除速率的檢測 方法’其中该晶圓包括回收晶圓。 1 3· —種深溝渠-深溝渠短路檢測晶圓之移除厚度檢測 方法，其中該方法包括： 提供一晶圓，該晶圓已形成複數個深溝渠； 於該晶圓上未形成該些深溝渠之區域設置複數個雷射 標記，每一該些雷射標記分別設置於該晶圓之不同深度 中； 對該晶圓進行一研磨製程； 對該晶圓進行一研磨後清洗製程；以及 檢視該些雷射標記，以讀取該晶圓之一移除厚度，並 檢測該晶圓，以判斷在該移除厚度是否有產生深溝渠—深 溝渠短路。 1 4·如申請專利範圍第1 3項所述之深溝渠—深溝渠短路 檢測晶圓之移除厚度檢測方法，其中更包括根據該移除厚 度求出一移除速率。 1 5 ·如申請專利範圍第1 3項所述之深溝渠—深溝渠短路 檢測晶圓之移除厚度檢測方法，其中該些雷射標記更包括 設置於該晶圓之非元件區。 1 6 ·如申請專利範圍第1 3項戶斤述之深溝渠·•深溝渠短路 檢測晶圓之移除厚度檢測方法，其中該些雷射標記至少包 括第一圖案、一第二圖案與〆第三圖案’且該第一圖 案、該第二圖案與該第三圖案分別代表該些深溝渠之一第^ 846twf.ptd Page 16 559978 6. Scope of Patent Application-Method ′ Where the wafer includes a bare wafer. 12. The method for detecting a wafer removal rate according to item 7 of the scope of patent application ', wherein the wafer includes a recovered wafer. 1 3 · —A method for removing thickness of a deep trench-deep trench short-circuit detection wafer, wherein the method includes: providing a wafer, the wafer has formed a plurality of deep trenches; and the plurality of deep trenches are not formed on the wafer A plurality of laser marks are set in the area of the deep trench, each of which is respectively set at a different depth of the wafer; a polishing process is performed on the wafer; a post-polishing cleaning process is performed on the wafer; and The laser marks are inspected to read a removed thickness of one of the wafers, and the wafer is inspected to determine whether a deep trench-deep trench short circuit is generated at the removed thickness. 14. The method for detecting the thickness of a deep trench-deep trench short-circuit detection wafer as described in item 13 of the scope of patent application, further comprising determining a removal rate according to the removal thickness. 15 · The method for detecting the thickness of a deep trench-deep trench short-circuit detection wafer as described in item 13 of the patent application scope, wherein the laser marks further include a non-element area disposed on the wafer. 1 6 · Deep trenches as described in item 13 of the scope of patent application · • Deep trench short-circuit detection wafer removal thickness detection method, wherein the laser marks include at least a first pattern, a second pattern and 〆 The third pattern ', and the first pattern, the second pattern, and the third pattern respectively represent one of the deep trenches.
第17頁 559978 六、申請專利範圍 一深度、一第二深度與一第三深度，且該第一深度小於該 第二深度，且該第二深度小於該第三深度。 1 7.如申請專利範圍第1 3項所述之深溝渠-深溝渠短路 檢測晶圓之移除厚度檢測方法5其中在檢視該些雷射標 記，以讀取該晶圓之該移除厚度，並檢測該晶圓，以判斷 在該移除厚度是否有產生深溝渠-深溝渠短路之步驟中， 該第一圖案消失，而該第二圖案與該第三圖案仍存在，則 表示該移除厚度在該第一深度與該第二深度之間。Page 17 559978 6. Scope of patent application A depth, a second depth and a third depth, and the first depth is smaller than the second depth, and the second depth is smaller than the third depth. 1 7. The method for detecting the thickness of a deep trench-deep trench short-circuit detection wafer as described in item 13 of the scope of the patent application 5 where the laser marks are inspected to read the removed thickness of the wafer And inspect the wafer to determine whether there is a deep trench-deep trench short circuit in the step of removing the thickness, the first pattern disappears, and the second pattern and the third pattern still exist, indicating that the shift The division thickness is between the first depth and the second depth.
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