TW552497B - Flexible electronic device - Google Patents
Flexible electronic device Download PDFInfo
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- TW552497B TW552497B TW090129822A TW90129822A TW552497B TW 552497 B TW552497 B TW 552497B TW 090129822 A TW090129822 A TW 090129822A TW 90129822 A TW90129822 A TW 90129822A TW 552497 B TW552497 B TW 552497B
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- 238000000034 method Methods 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000007787 solid Substances 0.000 claims description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 4
- 239000011343 solid material Substances 0.000 claims description 4
- 230000003313 weakening effect Effects 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 10
- 238000005452 bending Methods 0.000 description 7
- 238000005336 cracking Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000013077 scoring method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0277—Bendability or stretchability details
- H05K1/0278—Rigid circuit boards or rigid supports of circuit boards locally made bendable, e.g. by removal or replacement of material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5381—Crossover interconnections, e.g. bridge stepovers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0191—Dielectric layers wherein the thickness of the dielectric plays an important role
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
- H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0064—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a polymeric substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Structure Of Printed Boards (AREA)
- Credit Cards Or The Like (AREA)
Description
552497
本發明關於撓性裝置 製造此裝置之方法。 用以裝在一彎曲或撓性支座上,及 製造撓性電子裝置之能力 局便用電子裝置於日增4 不同應用中之趨勢’已為曰增之需求。例如 用於“智慧卡”中,即塑料之***尺寸之 ς 制器及安全記憶體。 g括彳政才. 製作在塑料基體上之大面積電子裝置(lae),已被择… 到數種問題。問題包括低熱預算, 導:如各層中之斷裂不良黏接膨::: <層與層之不良對齊及塑料基體之收縮。 之t Γ ΓΓ^Γ46δ54揭示—_堯性主動矩陣_ :技負電路元件之定型塊在軟膏中沉積在撓性基截 合二起性:槽。此等塊落於各別凹槽中,再電· 口 起以構成一王動矩陣。 備==014452中揭示一方法,-薄膜_ 立芦上形成。風離子被植入獨立層中。I! 二:;疋以雷射光輻照,使獨立層與基體分開,此方法佳 Μ入步驟效應而加速。此裝置於是可被轉移 2面積主動料基體可由已分別在其他 = 複數個較小單元之轉移而構成。 Iks 本發明(目的為提供一構成一電子裝置之 : 裝置可f曲’為-改進之撓性電子裝置。 4万去4 本發明提供製造電子裝置之方法’其含以下各步驟: a堅固材料一層中之弱化區構成預定圖案,其限
裝 耵
線 -4-
552497
ι子裝置(LAE) ’或在矽上生產積體電路。 本發明亦&供一電子裝置,其包含一堅固材料層,其上 ,有電子組件,堅固層之相鄰部份由堅固層之弱/匕區所限 走 I性連接咨在不同部份上之組件間延伸。 八本發明尚提供一裝置,其中之堅固層沿一或多個弱化區 刀隔,俾裝置為撓性。弱化區可在堅固層之二表面上含槽 溝。 〇印
^根據另一特性,本發明提供一電子裝置,其含一堅固材 料層,其上有電子組入,撓性連接器在堅固層之不同相鄰 部份上之組件間延伸,堅固層被分隔為相鄰部份,以使裝 置為撓性。 裝 因此,電子裝置備有已分離之相鄰部份,而非由弱化區 所連接。此點甚為合適,因裝置係以分隔型式,而且相當 堅固,以備隨後之處理。單單連接器即足夠安全及夠強: 以保持相鄰部份於一起,直到裝置在基體上為止。 堅固層較佳包含脆材料,如玻璃或矽,而撓性層可含塑 料。 °
線 弱化區可由蝕刻或吹砂堅固層方式構成,或利用鈷石圓 鋸。或者,可利用鈷尖切刀,或質硬合金邊緣輪刻劃堅固 層而成,或利用雷射燒蝕一細槽或隙。弱化區可含槽溝或 隙縫,其自一或二表面邵份延伸通過。在另一實施例中, 其可包含隙缝或穿孔,其完全通過堅固層。 在一較佳貫施例中,弱化區可能含在相當寬之基座中構 成之細槽或隙縫。一較寬槽溝較大之寬度及深度,在其彎 -6 -
552497 A7 --------- B7 五、發明說明(4 ) 曲時’可降低發生在堅固層中裂紋相反端之分離,俾鄰近 槽溝足堅固層表面限定之角度可減少。此外,較寬槽溝之 冰度可易於導致堅固層破裂。細槽溝可保證在弱化區之破 裂位置可精確限定。 弱化區較佳為線型,即弱化區沿直線及/或曲線延伸,此 夕卜,其較佳有寬度實際上較長度為小,俾破裂沿其長度以 可控制方式發生。弱化區可在電子組件在堅固層上製造前 或後建i。弱化區所限定之相鄰部份,應足夠小,俾使在 裝置正常使用期間,超過弱化區破裂之堅固層之進一步破 裂,不可能發生。 堅固層可利用雷射或其他能量波束局部將層加熱,以區 分為相鄰部份,隨後利用噴射氣流或液體冷卻劑,以迅速 冷卻或淬火。此方法引進之應力可使此層破裂,而不需將 其彎曲。在其他情形下,以相當厚之層時,此方法僅能弱 彳匕此層之預定區域,使其在隨後之彎曲中破裂。 連接器可在步騾(d)中以電鍍金屬於堅固層中構成。此舉 可包括在電鍍金屬連接器之前,沉積一種子層。俾使連接 器部份在光阻上形成橋路,光阻隨後予以清除。合成之連 接器因此可彎曲,雖然裝置彎曲,不同部份上之二件之電 連接仍可維持。每一連接器可含一撓性橋路部份,其在臣又 固層將破裂之弱化部份之位置延伸,或其可含數橋路4二 角琴形結構。 ^ 本發明之實施例現以舉例方式,並參考伴隨圖式加以說 明,其中: θ ^紙張尺度ii财@ S家標準(CNS) Α4規格(210 X 297公釐)" --------- 552497
圖1A-D為本發明一實施例之撓性裝置之製造中之部份剖 面圖; 圖2A-D顯示堅固層之部份剖面圖,顯示使層破裂之不同 方法; 圖3 A-C顯示連接器16之製造步驟中之部份剖面圖,說明 圖1C及1D中之連接器; 圖4顯示圖1D中說明之撓性裝置之平面圖;及 圖5顯示具有撓性電子裝置於其上之智慧卡。 一種製造撓性裝置之方法於圖j A · D中予以說明。圖i A 顯示通過玻璃層2之平面之部份橫向剖面圖。顯示出二弱化 區4,每區包含一對形成在層之相對表面8及1〇上之槽溝6 ,其與剖面平面成垂直。槽可由蝕刻或吹砂方式為之。槽 溝在島1 4上限定層中間之相鄰部份。 圖1所示之槽溝6有一橫向矩形剖面。其他幾何圖形如三 角形剖面亦可,其中,三角形頂點限定堅固層中逐漸破裂 之線。 電子裝置12於是在層(圖iB)之上表面8上構成。可利用 已知之L A E技術製造組件,並含無定形微矽晶或多晶矽裝 置。此方法亦可利用矽以取代玻璃層2,應用於在矽上構成 積體電路。 導電及撓性連接器16(圖1C)於是加入,以使相鄰島上之 裝置之連接。此等連接器之構成將於以下之圖2討論。破璃 層安裝在塑料或聚合體基體1 8之上。此總成加以彎曲以使 玻璃層以控制之方式,沿弱化區4破裂。箭頭2〇說明彎曲之 裝 訂
k -8 - 552497
方向以破裂弱化區4。應瞭解,在其他方向彎曲總成以破裂 其他弱化區亦甚適當,該區不與圖m示之方向平行。彎曲 方法產生裂紋22如圖1D所示.結果,島14可彼此移動,但 仍經電鍍橋路1 6成電聯接。 玻璃層典型為約0.7 mm或更少之厚度。島為5 mm><5 _ 。島之尺寸係根據目前使用之智慧卡技術之最大晶態石夕晶 片尺寸25 mm2此係由彎曲之程度而定,即積體電路晶片破 裂前’或其他失效發生前承受之程度。尺寸可變化以適合 特殊應用之需求’及所用材料及電路特性之需求。應瞭解 ,可用不同材料構成堅固層2,與撓性層相關之堅固度,亦 可有變化之堅固程度。島應足夠小,以防止在正常使用之 裝置之彎曲期間進一步破裂。 圖2A-D說明將堅固層2破裂之其他方法。較佳為在與圖1 所示之相較之堅固層表面中構成細槽溝2 i,以限定弱化區 。此可利用鈷尖切刀以刻劃方法達成。或者,利用雷射自 堅固層燒蝕材料,以構成細槽溝。用此一方法,堅固層中 破裂之位置可精確限定。 圖2A顯示利用此程序之堅固層破裂。破裂22之位置由在 堅固層之上,或下表面8及10中構成細槽溝21而限定。堅 固層隨後之彎曲,造成堅固層沿細槽溝之長度破裂。 圖2B-D顯示另一實施例,其中,細槽溝與相當大之槽溝 7結合,以提供在破裂之堅固層,與圖2A相較,有較大程 度之撓性。此相當大之槽溝可在上表面8上(圖2B),或下表 面1〇(圖2C)上形成,或在堅固層(圖2D)之上及下二表面8 -9 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
裝 訂
線 552497
發明説明( 及1 〇上形成。細捧 之逐漸破裂22 係用以限定相當大槽溝7之基座23中 以:劃方法構成之細槽溝有_典型約Η 劃万法可造成刻匈始—, ^ ^ 幻 .1Λ 、.泉二側之橫向損壞,合成之槽溝,包括 相壞約有10〇-2〇〇gm之深度。 用二寬槽溝之尺寸可依照數因素選擇。寬槽溝可 X1 il’工具,如此,與其深度相關之寬度應足夠, 奋、I S!l工具 < 角度。寬槽溝之;罙度可加以選擇, 定《堅固層所需之彎曲量。其寬度應應足夠以避免在堅 固層弓曲時’槽溝之相對壁之接觸。相當寬槽溝之寬度盘 深度可為㈣層厚度之—半或三分之—m" ' 應瞭解,、圖2中之每一實施例中,上表面8已刻劃,此步 騍應在連接器16形成前實施,下表面10可在堅固層裝在另 一基體之前,任一階段實施。 —參考圖3,現在說明撓性連接器構成方法之_例。圖…員 不在玻璃層2之上表面8中之一放大之弱化區或槽溝6。光阻 沉積在表面8上,再成圖案,以使三魏24,26,28在槽溝6 之區中形成,塊2 6位於槽溝之基座,塊24及28則接近槽溝 之各邊緣。一薄電鍍種子層3 〇(圖3Β)以箭頭34之方向,利 用陰屏罩32沉積,俾此層延伸至塊26及延伸至塊24及28之 邊緣。種予層3 0可由鉻上加銅組成。 連接器16於是電鍍在種子層30上。連接器可用鎳或銅構 成。光阻塊24,26及28隨後移除,以保留最終連接器(圖 3 C)。如圖1所討論者,彎曲玻璃層會在連接器之下構成二 本紙張尺度適用中國國家標準(CNS) Α4規格(210Χ 297^爱) -10 5524Q7
破农22。由圖可見’塊26之存在在連接器中導致-六角形 結構’其在裂紋上延伸成—橋路。連接器能配合玻璃層所 需之^曲一,以供控制之破裂而不致使玻璃層斷裂。 圖4頭7F利用上述技術形成之撓性電子裝置3 8之平面圖 。此裝置包括複數個相鄰島14,每一支撑數電子組件12, 並由連接器16互聯。虛線36表示島14之邊界。
裝 本發明之電子裝置可用於智慧卡中。圖5說明一智慧卡4〇 。其含塑料42之撓性卡,組件44裝在其上,並包含一所述 讀生電子裝置之實施例。提供記憶體外,此等卡可包括 其他功能,如生物統計測試功能(例如指紋偵感器),以增 加2全之鍵盤,顯示器,擴音器,麥克風等。本發明可使 目前使用之總晶片面積增加約25随2。外部讀出器及/或電 源可經由包括在組件44内之電接觸表面(未示 接 置。 此等裝置可用以製作撓性顯示器(例如pLED(光放射聚合 物顯示器),或液晶顯示器),併入衣物中,或裝在任何曲
線或撓性基體上,如電腦滑鼠,燈罩,玩具等。 閱讀本揭示後,對精於此技藝人士言,其他修改或變化 當屬可卜此種修改及變化可能涉及在已知設計,製造及 裝置之使用之等值物及特性,彼等可取代或為已說明 之額外特性。 雖然申請專利範圍在此申請中,在於特性之特別結合, 應瞭解,本發明所揭示之範圍亦包括明確或意指之所揭示 之任何新穎特性,或特性之新穎結合,不論其與任= 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) -11 -
申凊專利範圍之同一發明有關,《不論其可緩和如本發明 所作之任何或所有技術問題。以個別實施例所敘述之特性 ,亦可能結合提供於一單一實施例中。反之,在單—电… ’亦可能以子組合方式分別提供。申請:: 奉.祈中請專利範圍,在本中請執行_,可自 或特性之組合演繹而出。 特性 2 破璃層 4 弱化區 6 槽溝 7 相當大之溝槽 8 上表面 10 下表面 12 電子組件 14 相鄰部分或島 16 導電及撓性連接器 18 塑料或聚合體基體 20 箭頭 2 1 細槽溝 22 裂紋 23 基座 24 光阻塊 26 光阻塊 28 光阻塊 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 552497 A7 B7 五、 發明説明 (10 ) 30 種子層 32 陰屏罩 34 箭頭 3 6 虛線 3 8 撓性電子裝置 40 智慧卡 42 含塑料之撓性卡 44 組件 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐)
Claims (1)
- 2 3 6 . 申請專利把園 一種製造電子裝置之方法,包含步驟·· (a)在一堅固材料層中形成弱化區之一 界定堅固層之相鄰部份; "疋圖木,其 (b )在堅固層上提供電子組件;及 :)形成挽性連接器’其在不同部份上之組件。 如令知專利範圍第”頁之方法,包 層之步驟。 》弱化£ £分堅固 一種製造電子裝置之方法,其包含以下步驟: 〇)在堅固層上提供電子組件; (M形成撓性連接器,其在堅固層之不同相鄰部份上 組件間延伸;及 (C)區分堅固層為相鄰部份。 如申請專利範圍第卜2或3項之方法,包括安裝堅固層 於撓性基體上之步驟。 曰 如申請專利範圍第!,2或3項之方法,其中連接器為 鍍金屬於堅固層上而形成。 如申請專利範圍第5項之方法,其中種子層係在,電錄 金屬連接器之前作沈積。 如申請專利範圍第5項之方法,其中光阻之面積在電鍍 金屬足前限定在堅固層上,俾使連接器之該部份於該光 阻上構成橋路,且該光阻隨後移除。 種%子裝置,包含一堅固材料層,其上具有電子組件 ,堅固層之相鄰部份由堅固層之弱化區所界定,撓性連 接器在不同部份上之組件間延伸。 8 . 552497• 一種電子裝置’包括堅固材料之一層,其上有電子組件 撓性連接器在堅固層之不同相鄰部份上之組件間延伸 ’堅固層被區分為相鄰部份,而使該裝置可為撓性。 1 0 ·如申請專利範圍第9項之裝置’其中之堅固層在沿堅固 層之弱化區區分為相鄰部份。 1 1 ·如申請專利範圍第8或1 0項之裝置,其中弱化區在堅固 層之一或二表面上含槽溝。 1 2 ·如申請專利範圍第8或9項之裝置,其中堅固層係裝在撓 性基體上。 1 3 ·如申請專利範圍第8或9項之裝置,其中連接器包含電鍍 金屬。 1 4 ·如申請專利範圍第8或9項之裝置,其中連接器包含一像 橋路之部份。 1 5 · 一種具有如申請專利範圍第8或9項之裝置裝於其上之物 件。 -2-
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EP (1) | EP1346410A1 (zh) |
JP (1) | JP2004515017A (zh) |
KR (1) | KR20020077401A (zh) |
CN (1) | CN1272849C (zh) |
GB (1) | GB0029312D0 (zh) |
TW (1) | TW552497B (zh) |
WO (1) | WO2002045160A1 (zh) |
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-
2000
- 2000-12-01 GB GBGB0029312.6A patent/GB0029312D0/en not_active Ceased
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2001
- 2001-11-08 US US10/008,337 patent/US6798052B2/en not_active Expired - Fee Related
- 2001-11-23 CN CNB018044085A patent/CN1272849C/zh not_active Expired - Fee Related
- 2001-11-23 KR KR1020027009744A patent/KR20020077401A/ko not_active Application Discontinuation
- 2001-11-23 WO PCT/EP2001/013730 patent/WO2002045160A1/en not_active Application Discontinuation
- 2001-11-23 JP JP2002547225A patent/JP2004515017A/ja not_active Abandoned
- 2001-11-23 EP EP01998999A patent/EP1346410A1/en not_active Withdrawn
- 2001-12-03 TW TW090129822A patent/TW552497B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI382274B (zh) * | 2005-01-18 | 2013-01-11 | Hewlett Packard Development Co | 薄膜裝置主動矩陣及其製造方法 |
TWI587527B (zh) * | 2006-09-06 | 2017-06-11 | 美國伊利諾大學理事會 | 二維設備陣列 |
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Publication number | Publication date |
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GB0029312D0 (en) | 2001-01-17 |
CN1272849C (zh) | 2006-08-30 |
CN1397093A (zh) | 2003-02-12 |
US6798052B2 (en) | 2004-09-28 |
WO2002045160A1 (en) | 2002-06-06 |
KR20020077401A (ko) | 2002-10-11 |
JP2004515017A (ja) | 2004-05-20 |
US20020068389A1 (en) | 2002-06-06 |
EP1346410A1 (en) | 2003-09-24 |
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