TW540070B - Manufacturing method of thermistor element - Google Patents

Abstract

To provide a method capable of effectively manufacturing a small-sized thermistor element of low resistance. The method of manufacturing a thermistor element is to form trenches 2, 3 for division into individual thermistor elements on one surface of a thermistor green substrate 1 obtained by sheet molding of material powder, the thermistor green substrate 1 is baked, and a thermistor mother substrate is obtained. Electrodes are formed on both surfaces of the obtained thermistor mother substrate, and the respective thermistor elements are obtained by dividing the thermistor mother substrate along the trenches 2, 3 after the electrodes are formed.

Description

540070 經濟部智慧財產局員工消費合作社印製 五、發明説明（ 〔技術領域〕 本發明係有關於用於電子電路中過電流的保護和溫度 補償等之熱敏電阻元件之製造方法，更詳細的是有關於兩 主面形成有電極之熱敏電阻元件之製造方法的改良。 〔習知技術〕 以往，具有正電阻溫度特性之熱敏電阻元件、亦即 PTC熱敏電阻元件係廣泛的用於電子電路.中過電流保護等 。圖8係顯示以往的PTC熱敏電阻元件的一例之立體圖。 PTC熱敏電阻元件31，係包含具有正電阻溫度特性之半導 體陶瓷構成的圓板狀熱敏電阻基板32。在熱敏電阻基板32 的上面形成2層構成的電極33，在基板32下面形成和電 極33對向的另一電極(未圖示）。 上述PTC熱敏電阻元件31的製造係如下述般來進行 。首先，將構成熱敏電阻基板32之原料粉末投入機壓’藉 乾壓成形來得出圓板狀成形體。將如此般所得之多數個成 形體置入作爲燒成用容器的匣內，於大氣中燒成’得出® 板狀的熱敏電阻基板32。 之後，在熱敏電阻基板32的兩主面上，藉無電解鍍敷 以形成Ni構成的Ni電極膜33a。這時，Ni電極膜33a係 形成於熱敏電阻基板32的兩主面及側面。之後’用磨床磨 削側面所形成的Ni電極膜’以僅在兩主面形成Ni電極膜 33a。接著在Ni電極膜33a層合第2 Ag電極膜33b來構成 電極；第2 Ag電極膜33b係藉由網版印刷Ag膠以形成間 請 先 閲 tt -背540070 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention ([Technical Field] The present invention relates to a method for manufacturing a thermistor element used for overcurrent protection and temperature compensation in electronic circuits. This is an improvement on the method of manufacturing a thermistor element with electrodes formed on both main surfaces. [Knowledge] In the past, PTC thermistor elements, which have positive resistance temperature characteristics, have been widely used in Electronic circuit. Medium overcurrent protection, etc. Figure 8 is a perspective view showing an example of a conventional PTC thermistor element. PTC thermistor element 31 is a disc-shaped thermistor composed of a semiconductor ceramic having positive resistance temperature characteristics. Substrate 32. An electrode 33 composed of two layers is formed on the top of the thermistor substrate 32, and another electrode (not shown) facing the electrode 33 is formed under the substrate 32. The PTC thermistor element 31 is manufactured as follows First, the raw material powder constituting the thermistor substrate 32 is put into a machine press to obtain a disk-shaped formed body by dry pressing. The majority of the formed bodies were placed in a box serving as a firing container, and fired in the atmosphere to obtain a plate-shaped thermistor substrate 32. Then, on both main surfaces of the thermistor substrate 32, Electroless plating is used to form a Ni electrode film 33a made of Ni. At this time, the Ni electrode film 33a is formed on both main surfaces and side surfaces of the thermistor substrate 32. Then, the "Ni electrode film formed on the side surface is grinded with a grinder" to The Ni electrode film 33a is formed only on the two main surfaces. Then, a second Ag electrode film 33b is laminated on the Ni electrode film 33a to form an electrode; the second Ag electrode film 33b is formed by screen printing Ag glue to form a space. Please read tt first -Back

I I» 裝 訂 本紙張尺度適用中國國家標準（CNS )八4規格（2丨〇〆297公釐） 540070 經濟部智慧財產局員工消費合作社印製 A7 ______B7 . 五、發明説明（> ) 隙區域A。此乃基於，爲了達成和熱敏電阻基板32的電阻 接觸，首先形成底層的Ni電極膜33a，又爲了提高電極33 和下面的電極之焊接性，而在外側形成Ag電極膜33b。 〔發明所要解決的問題〕 然而，近年來，對PTC熱敏電阻元件31，係強烈的 要求低電阻化。爲了謀求PTC熱敏電阻元件31的低電阻 化，將熱敏電阻基板32的主面面積增大、.以及將熱敏電阻 基板32的厚度弄薄是必要的。 然而，上述以往的製造方法，熱敏電阻基板32係以乾 壓成形法來得出。乾壓成形法下，將原料粉未成形爲成形 體時，所得成形體的厚度無法變得很薄，要得出0.4mm以 下的熱敏電阻基板32在現實上是非常困難的。 因此，例如爲了使用主體爲BaTi03之比電阻5.2Ω · cm的原料粉末而實現0.15Ω的電阻値，當熱敏電阻基板 32厚爲0.5mm時，熱敏電阻基板32主面面積必須爲 169mm2左右。亦即，當熱敏電阻基板32的平面形狀爲矩 形時，一邊的長度必須爲13mm，如此PTC熱敏電阻元件 32的尺寸將變得非常大。 又，在形成上述電極33時，爲了達成電阻接觸，首先 是將Ni實施無電解鍍敷以形成底層的電極膜，如此般所形 成的Ni構成的電極膜和熱敏電阻基板32間的電阻接觸並 不安定，即使這樣做電阻値還是會上昇。亦即’當構成上 述尺寸的熱敏電阻元件時，基於上述無電解鍍敷所形成的 _ 4 ___ >紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐1 (請先閲讀背面之注意事項再 本頁)II »The size of the bound paper is in accordance with the Chinese National Standard (CNS) 8-4 specification (2 丨 〇 公 297mm) 540070 Printed by the Consumers’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ______B7. 5. Description of the invention () Gap area A . This is because, in order to achieve resistance contact with the thermistor substrate 32, an underlying Ni electrode film 33a is formed first, and an Ag electrode film 33b is formed on the outside in order to improve the solderability between the electrode 33 and the lower electrode. [Problems to be Solved by the Invention] However, in recent years, the PTC thermistor element 31 has been strongly required to have a low resistance. In order to reduce the resistance of the PTC thermistor element 31, it is necessary to increase the area of the main surface of the thermistor substrate 32 and reduce the thickness of the thermistor substrate 32. However, in the conventional manufacturing method described above, the thermistor substrate 32 is obtained by a dry pressing method. In the dry-press forming method, when the raw material powder is not formed into a formed body, the thickness of the obtained formed body cannot be made very thin, and it is actually very difficult to obtain a thermistor substrate 32 of 0.4 mm or less. Therefore, for example, in order to achieve a resistance of 0.15Ω using a raw material powder with a specific resistance of 5.2Ω · cm as the body of BaTi03, when the thermistor substrate 32 is 0.5mm thick, the main surface area of the thermistor substrate 32 must be about 169mm2. . That is, when the planar shape of the thermistor substrate 32 is rectangular, the length of one side must be 13 mm, so that the size of the PTC thermistor element 32 becomes very large. In order to form a resistance contact when forming the electrode 33, first, Ni is electrolessly plated to form a bottom electrode film. The resistance contact between the electrode film made of Ni and the thermistor substrate 32 formed in this manner is first formed. It is not stable, even if you do so, the resistance will still rise. That is, 'When constructing the thermistor element of the above size, the _ 4 ___ formed based on the above electroless plating is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm 1 (please read the (Notes on this page)

、1T 辦 540070 A7 __—__B7_ 五、發明説明（$ ) 電極1吴之電阻接觸的不安定性，電阻値將增大0.1 Q以上， 實際上要得出0.2Ω以下的熱敏電阻元件32是非常困難的 〇 本發明的目的係爲了解決上述習知技術的缺點而提供 一能安定且效率良好的製造出更低電阻値的熱敏電阻元件 之熱敏電阻元件之製造方法。 〔用以解決課題之手段〕 請求項1所記載的本發明之熱敏電阻元件之製造方法 ’其特徵在於，係具備：準備出一面形成有爲了分割成各 個熱敏電阻元件的複數道槽之熱敏電阻未處理基板的步驟 ;將前述熱敏電阻未處理基板燒成而得出熱敏電阻母基板 的步驟；在前述熱敏電阻母基板的兩面形成電極的步驟； 以及藉由沿著前述槽分割前述形成有電極之熱敏電阻母基 板’以得出各個熱敏電阻元件的步驟。 依請求項2所記載的發明，前述用以得出熱敏電阻未 處理基板的步驟，係藉由將陶瓷漿薄片成形來進行，且前 述熱敏電阻未處理基板的厚度爲〇.4mm以下。 依請求項3所記載的發明，前述電極形成步驟係藉濺 鍍來進行。 依請求項4所記載的發明，前述熱敏電阻元件爲PTC 熱敏電阻元件。 〔發明之實施形態〕 ______5______ 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） (請先閱讀背面之注意事項再^T本頁) -裝、 1T Office 540070 A7 __—__ B7_ V. Description of the invention ($) The instability of the resistance contact of the electrode 1 Wu, the resistance 値 will increase by 0.1 Q or more. In fact, it is necessary to obtain a thermistor element 32 of 0.2 Ω or less. Difficulty. The purpose of the present invention is to provide a method for manufacturing a thermistor element that can stably and efficiently produce a lower resistance thermistor element in order to solve the shortcomings of the conventional technology. [Means for Solving the Problem] The method for manufacturing a thermistor element of the present invention described in claim 1 is characterized in that: a method is provided in which a plurality of grooves are formed on one surface of which are divided into respective thermistor elements. The thermistor unprocessed substrate step; the step of firing the thermistor unprocessed substrate to obtain a thermistor mother substrate; the step of forming electrodes on both sides of the aforesaid thermistor mother substrate; and The step of dividing the aforementioned thermistor mother substrate with electrodes formed by the grooves to obtain each thermistor element. According to the invention described in claim 2, the step of obtaining a thermistor unprocessed substrate is performed by forming a ceramic paste sheet, and the thickness of the aforesaid thermistor unprocessed substrate is 0.4 mm or less. According to the invention described in claim 3, the electrode forming step is performed by sputtering. According to the invention described in claim 4, the thermistor element is a PTC thermistor element. [Implementation form of the invention] ______5______ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before ^ T this page)-Install

’1T 經濟部智慧財產局員工消費合作社印製 540070 經濟部智慧財產局員工消費合作社印製 五、發明説明（ 以下，邊參照圖面邊說明本發明的一實施例之PTc熱 敏電阻元件的製造方法。 首先，將用以構成BaTi〇3系PTC熱敏電阻基板的假 燒原料粉末加入水溶性結合劑中，以準備出陶瓷漿。將該 陶瓷漿用刮刀（doctor blade)法成形爲薄片，藉此以得出厚 0.36mm的未處理薄片。將該未處理薄片切成n〇><i1〇rnm 的平面形狀’以得出圖2所示之熱敏電阻基板1。 接著’如圖1(a)所示般，在上述熱敏電阻基板1的上 面’使用刀具以形成複數道的槽2、3。複數道的槽2、3， 如圖1(b)之截面圖所示般，具有截面v字形的形狀，其深 度爲0· 1 mm。 又，複數道的槽2和複數道的槽3係朝互相正交的方 向延伸。又，複數道的槽2，係在熱敏電阻基板1的上面 ，從一端緣la算起7.5mm的位置形成最初的槽2，其他槽 2則以槽2、2間的間距爲9.5mm的方式來形成。同樣的， 複數道的槽3，係在熱敏電阻基板1之和端緣u正交的端 緣lb算起7.5mm的位置形成最初的槽3，其他槽3則以槽 3、3間的間距爲9.5mm的方式來形成 如上述般，以得出複數個9.5mmX9.5mm矩形區域呈 矩陣狀配置成的熱敏電阻基板1。 接著，將上述熱敏電阻基板1置入燒成用匣，進行藉 加熱以除去結合劑的步驟後，加熱至1350°C、於氮周圍氣 氛下燒成，之後在氧周圍氣氛下冷卻至室溫，藉此以得出 熱敏電阻母基板。 請 先 閱 讀 背 I 項 裝 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 540070 A7 B7 經濟部智莛財產局員工消費合作社印製 五、發明説明（<；) 又，以往的PTC熱敏電阻元件製造時，在將乾壓成形 所得的成形體燒成時，係在大氣中進行燒成，本實施例， 當昇溫至最高燒成溫度時，是在氮氣周圍氣氛下進行燒成 ，而在從最高溫度冷卻之過程中，如上述般是在氧氣周圍 氣氛下進行。此乃基於，藉由氮氣周圍氣氛下的昇躁」、能 將熱敏電阻基板1的結晶粒子加大，藉此可降低比電阻， 且於冷卻過程使用氧氣周圍氣氛，係藉由將粒界再^氧化以 使正電阻溫度特性能良好的發揮的緣故。. 在上述般得出之熱敏電阻母基板的兩面，藉濺鍍以形 成用以行電阻接觸的電極膜之厚0.15/zm的Cr膜。之後， 藉濺鍍在Cr膜上形成厚0.4//m的Ni-Cu膜，再藉濺鍍以 形成厚〇.5/zm的Ag膜。將如此般所形成的電極構造用圖 3的擴大部分切除截面圖來顯示。 圖3中，1A代表燒成所得之上述熱敏電阻母基板。在 熱敏電阻母基板1A的上面，層合著Cr膜4、Ni - Cu膜5 及Ag膜6。同樣的，在熱敏電阻母基板1A的下面，也層 合著Cr*膜4、Ni - Cu膜5及Ag膜6。 又，熱敏電阻母基板1A的上面，在形成有槽2、2的 區域，係以沿著槽2內壁的方式形成有上述Cr膜4、Ni -Cu膜5及Ag膜6構成的層合膜。特別是雖未圖示出，在 形成有槽3的部分，同樣的層合膜是以及於槽3內部的方 式來形成。 接著，將上述熱敏電阻母基板1A沿著槽2、3分割。 亦即，藉由在沿著圖3之一點鏈線B、B的部分切斷，以 ---- 7 (請先閲讀背面之注意事項再本頁) :^^本'1T Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 540070 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (hereinafter, the manufacture of a PTC thermistor element according to an embodiment of the present invention will be described with reference to the drawings Method: First, the raw material powder for sintering the BaTi03-based PTC thermistor substrate is added to a water-soluble binder to prepare a ceramic slurry. The ceramic slurry is formed into a sheet by a doctor blade method. Thereby, an unprocessed sheet having a thickness of 0.36 mm is obtained. The unprocessed sheet is cut into a plane shape of n0 < i10rnm 'to obtain the thermistor substrate 1 shown in Fig. 2. Then,' as As shown in FIG. 1 (a), a plurality of grooves 2, 3 are formed on the thermistor substrate 1 by using a cutter on the upper surface of the thermistor substrate 1. As shown in the sectional view of FIG. 1 (b), Generally, it has a V-shaped cross section and its depth is 0.1 mm. Moreover, the grooves 2 of the plural tracks and the grooves 3 of the plural tracks extend in a direction orthogonal to each other. Moreover, the grooves 2 of the plural tracks are connected to heat. The upper surface of the varistor substrate 1 has a position shape of 7.5 mm from one end edge la. The first groove 2 and the other grooves 2 are formed so that the distance between the grooves 2 and 2 is 9.5 mm. Similarly, the grooves 3 of a plurality of tracks are connected to the end of the thermistor substrate 1 orthogonal to the end edge u. The first groove 3 is formed at a position of 7.5 mm from the edge lb. The other grooves 3 are formed in such a manner that the distance between the grooves 3 and 3 is 9.5 mm as described above to obtain a plurality of 9.5 mm × 9.5 mm rectangular areas in a matrix. The thermistor substrate 1 arranged in the shape. Next, the above-mentioned thermistor substrate 1 is placed in a firing box, and the bonding agent is removed by heating. Then, the thermistor substrate 1 is heated to 1350 ° C and fired in a nitrogen atmosphere. Then, it is cooled to room temperature in an ambient atmosphere of oxygen to obtain the thermistor mother substrate. Please read the back of item I. The size of this paper applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 540070 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs 5. Description of the invention (<) In addition, during the manufacture of conventional PTC thermistor elements, when the formed body obtained by dry pressing was fired, it was exposed to the atmosphere. Firing in the process, in this example, when the temperature is raised to the highest firing In this case, firing is performed in a surrounding atmosphere of nitrogen, and in the process of cooling from the highest temperature, it is performed in a surrounding atmosphere of oxygen as described above. Enlarging the crystal particles of the thermistor substrate 1 can reduce the specific resistance, and the oxygen surrounding atmosphere is used in the cooling process, because the grain boundaries are re-oxidized to make the positive resistance temperature characteristics exhibit good performance. On both sides of the mother substrate of the thermistor obtained as described above, a Cr film having a thickness of 0.15 / zm is formed as an electrode film for resistance contact by sputtering. After that, a 0.4 // m thick Ni-Cu film was formed on the Cr film by sputtering, and then an Ag film having a thickness of 0.5 / zm was formed by sputtering. The electrode structure thus formed is shown in an enlarged partially cutaway sectional view of FIG. 3. In FIG. 3, 1A represents the above-mentioned thermistor mother substrate obtained by firing. On the thermistor mother substrate 1A, a Cr film 4, a Ni-Cu film 5 and an Ag film 6 are laminated. Similarly, a Cr * film 4, a Ni-Cu film 5 and an Ag film 6 are laminated on the lower surface of the thermistor mother substrate 1A. Further, on the upper surface of the thermistor mother substrate 1A, in a region where the grooves 2 and 2 are formed, a layer composed of the Cr film 4, the Ni-Cu film 5 and the Ag film 6 is formed along the inner wall of the groove 2. Composite film. In particular, although not shown, in the portion where the grooves 3 are formed, the same laminated film is formed in the same manner as in the grooves 3. Next, the above-mentioned thermistor mother substrate 1A is divided along the grooves 2 and 3. That is, by cutting along the part of the chain line B, B along one of the points in Figure 3, ---- 7 (Please read the precautions on the back before this page): ^^ 本

、々ά 泰 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X；297公釐） 540070 A7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（6 ) 沿著槽2、2分割熱敏電阻母基板1A，同時沿著未圖示的 槽3、3分割熱敏電阻母基板1A。如此般以得出各個熱敏 電阻元件。將所得的熱敏電阻元件用圖4的前視圖和圖5 的立體圖來顯示。 熱敏電阻元件7中，係藉由上述般之分割熱敏電阻母 基板1A，以構成熱敏電阻基板1B。又，在熱敏電阻基板 1B的上面及下面，分別形成有電極8、9。電極8 ' 9的構 造係由上述Cr膜4、Ni-Cu膜5及Ag膜6層合成。 如上述般，以得出外形尺寸8x8X〇.3mm的PTC熱敏 電阻元件7。 測定該PTC熱敏電阻元件7室溫下的電阻値’結果爲 0.15Ω。 又，PTC熱敏電阻元件7的PTC電阻値躍進比例爲 4·5階。又，此處所謂PTC電阻値躍進比例，如圖6所示 般，係代表PTC熱敏電阻元件溫度上昇時電阻値變化曲線 中最大電阻値Umax比上最小電阻値Rmin的比例之指數， 上述1〇5時PTC電阻値躍進比例爲5階。 因此，PTC電阻値躍進比例越大，代表著因電阻値上 昇之電流限制作用越大。 如上述般，本實施例中，係將陶瓷漿成形爲薄片後， 藉燒成以得出熱敏電阻母基板1A，故最終之熱敏電阻基板 1B的厚度將能薄到〇.3mm。又，電極8、9，由於如上述 般藉濺鍍法來形成，故能提高最初所形成的Ni膜4對熱敏 電阻基板1B的電阻接觸之安定性。 __ 8 界.，，氏很尺度過用中國國家標準（CNS)A丨規格（210 x 297公爱 (請先閱讀背面之注意事項再填寫本頁) I裝---------訂---------線| 經濟部智慧財產局員工消費合作社印制农 540070々 々 The Thai paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇X; 297 mm) 540070 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (6) Along the slot 2, The thermistor mother substrate 1A is divided into two parts, and the thermistor mother substrate 1A is divided along the grooves 3 and 3 (not shown). This is how to get each thermistor element. The obtained thermistor element is shown in a front view in FIG. 4 and a perspective view in FIG. 5. In the thermistor element 7, the thermistor mother substrate 1A is divided as described above to form the thermistor substrate 1B. Electrodes 8 and 9 are formed on the upper and lower surfaces of the thermistor substrate 1B, respectively. The structure of the electrode 8'9 is composed of the above-mentioned Cr film 4, Ni-Cu film 5 and Ag film 6 layers. As described above, a PTC thermistor element 7 having an outer dimension of 8x8X0.3 mm is obtained. When the resistance 値 'of the PTC thermistor element 7 at room temperature was measured, it was 0.15Ω. The PTC thermistor jump ratio of the PTC thermistor element 7 is in the 4th and 5th order. In addition, the so-called PTC resistance step-up ratio shown in FIG. 6 is an index representing the ratio of the maximum resistance 値 Umax to the minimum resistance 値 Rmin in the resistance 値 change curve when the temperature of the PTC thermistor element rises. At 0, the PTC resistance step ratio is 5th order. Therefore, the larger the PTC resistance step, the greater the current limiting effect due to the rise in resistance. As described above, in this embodiment, the ceramic paste is formed into a thin sheet and then fired to obtain a thermistor mother substrate 1A. Therefore, the thickness of the final thermistor substrate 1B can be as thin as 0.3 mm. Since the electrodes 8 and 9 are formed by the sputtering method as described above, the stability of the resistance contact of the Ni film 4 formed first to the thermistor substrate 1B can be improved. __ 8 circles., The standard has been used in China National Standard (CNS) A 丨 specifications (210 x 297 public love (please read the precautions on the back before filling this page) I installed --------- --------- Line | Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Cooperatives, Printed Agriculture 540070

、發明說明（ 基於此，如上述般，具有8mmX8mm大小的平面形狀 PTC熱敏電阻元件7中，其電阻値能降低到〇.15Ω，且 PTC電阻値躍進比例能提昇到4.5階。 爲比較起見，依據以往的方法，使用和上述實施例相 同的材料’製作出PTC熱敏電阻元件。亦即，使用和上述 的原料粉末藉乾壓成形法得出成形體，藉燒成該成形 體以得出8X8X0.5mm的熱敏電阻基板。在該熱敏電阻基 兩主面分別藉無電解鍍敷法及烘烤結合法來形成Ni膜 及Ag膜’得出習知例的ρτ(：熱敏電阻元件。該習知例的 PTC熱敏電阻元件，由於使用乾壓成形法，熱敏電阻基板 的厚度無法變得相當薄，如上述般0.5mm左右爲其界限。 如此般所得的習知例之PTC熱敏電阻元件，室溫之電阻値 高到0.23Ω，且PTC電阻値躍進比例也只到3.5階。 又’依據以往的方法，爲了得出更低電阻値的PTC元 件’對熱敏電阻基板的尺寸作變更。亦即，作爲熱敏電阻 基板’係使用將乾壓法所得的成形體燒結所得之12X12X 0.5mm的熱敏電阻基板，而製作出習知的PTC熱敏電阻元 件。其結果，電阻値爲0.17Ω，且PTC電阻値躍進比例爲 4階。亦即，儘管使用平面形狀大到12X 12mm的熱敏電 阻基板，相較於實施例，室溫下的電阻値還是高，且PTC 電阻値躍進比例也較低。 因此，依據本實施例能得出厚度更薄的熱敏電阻基板 ，藉此能謀求PTC熱敏電阻元件的低電阻値化，又藉濺鍍 法以形成電極膜而能提昇電阻接觸的安定性，藉此也能謀 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）2. Description of the invention (Based on this, as described above, in the planar PTC thermistor element 7 having a size of 8mm × 8mm, its resistance can be reduced to 0.15Ω, and the PTC resistance step-up ratio can be increased to 4.5 steps. For comparison It was found that a PTC thermistor element was produced using the same material as the above-mentioned example according to the conventional method. That is, a molded body was obtained by dry pressing using the raw material powder described above, and the formed body was fired to The 8X8X0.5mm thermistor substrate is obtained. Ni and Ag films are formed on the two main faces of the thermistor substrate by electroless plating and baking bonding methods, respectively. The PTC thermistor element of this conventional example cannot use a dry forming method to make the thickness of the thermistor substrate quite thin, and the limit is about 0.5 mm as described above. For example, the PTC thermistor element has a room temperature resistance as high as 0.23Ω, and the PTC resistance step-up ratio is only 3.5. Also, according to the previous method, in order to obtain a PTC element with lower resistance, the thermal resistance The size of the varistor substrate That is, as a thermistor substrate, a 12X12X 0.5mm thermistor substrate obtained by sintering a molded body obtained by a dry pressing method is used to produce a conventional PTC thermistor element. As a result, the resistance 値It is 0.17Ω, and the PTC resistance step-up ratio is 4. In other words, although a thermistor substrate having a planar shape as large as 12X 12mm is used, compared with the embodiment, the resistance 室温 at room temperature is still high, and the PTC resistance 値The step-up ratio is also low. Therefore, according to this embodiment, a thinner thermistor substrate can be obtained, so that the low resistance of the PTC thermistor element can be reduced, and the electrode film can be formed by sputtering. Improve the stability of the resistance contact, so that 9 paper sizes can be applied to the Chinese National Standard (CNS) A4 (210 X 297 mm)

540070 A7 B7 五、發明說明（ 經濟部智慧財產局員工消費合作社印製 求電阻値的減低。 又’對PTC熱敏電阻元件7中熱敏電阻基板1B的厚 度作各種變更，其他條件和上述相同_作出各種熱敏電 阻兀件’測疋，電阻値。結果顯示於圖7。圖7中，橫軸代 表燒成則熱敏電阻未處理基板的厚度，難代表最終所得 的PTC熱敏電阻元件7的電阻値。 由圖7可明顯的看出，藉由使得所準備之熱敏電阻未 處理基板厚爲0.36mm以下，即可得出電阻値〇.15Ω以下 之PTC熱敏電阻元件7。 又，上述實施例中，係對PTC：熱敏電阻元件的製造方 法作δ兌明’本發明也適用於具有負電阻溫度特性之熱敏電 阻元件、亦即NTC熱敏電阻元件的製造方法。 又’有關上述槽2、3的深度，上述實施例中係設爲 0.1mm，但沒有特別的限定，在〇 〇7〜2mm左右的範圍內會g 作適當的變更。又，有關槽2、3的截面形狀，不限於V 字形，U字形等適當的形狀也可以，爲了分割容易起見， 宜爲V字形，特別是以槽頂端的內角爲30〜4〇。左右的v 字形槽爲最理想。 上述實施例中，作爲達成電阻接觸的電極，雖是形成 〇膜4，但只要能得出電阻接觸，不限於Cr，使用A卜Ni -Cr、Ti等適當的金屬材料也可以。 又，關於最外層的電極膜，取代Ag，使用焊接性良好 的適當的金屬、例如Cu、Ni、Au、Pt等都可以。 ίο 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐) "~ 請 λ 閱 讀 背540070 A7 B7 V. Description of the Invention (Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to reduce the resistance 又. Also make various changes to the thickness of the thermistor substrate 1B in the PTC thermistor element 7, other conditions are the same as above _Make various thermistor components' testing and resistance. The results are shown in Figure 7. In Figure 7, the horizontal axis represents the thickness of the thermistor untreated substrate during firing, which is difficult to represent the PTC thermistor element finally obtained. The resistance of 7. It can be clearly seen from FIG. 7 that the PTC thermistor element 7 having a resistance of 値 0.155 Ω can be obtained by making the thickness of the prepared thermistor untreated substrate less than 0.36 mm. Moreover, in the above-mentioned embodiments, the method of manufacturing PTC: thermistor element is described as “delta”. The present invention is also applicable to a thermistor element having a negative resistance temperature characteristic, that is, a method of manufacturing an NTC thermistor element. The depth of the grooves 2 and 3 is set to 0.1 mm in the above embodiment, but it is not particularly limited, and g may be appropriately changed within a range of about 007 to 2 mm. Moreover, the grooves 2 and 3 are appropriately changed. Sectional shape of 3 It is not limited to V-shaped, U-shaped and other suitable shapes are also possible. For easy division, V-shaped should be used, especially if the inner angle of the top end of the groove is 30 ~ 40. V-shaped grooves of about right and left are ideal. In the embodiment, although the film 4 is formed as an electrode for achieving the resistance contact, as long as the resistance contact can be obtained, it is not limited to Cr, and an appropriate metal material such as Al—Ni—Cr, Ti may be used. For the outer electrode film, instead of Ag, a suitable metal with good weldability, such as Cu, Ni, Au, Pt, etc. may be used. Ίο This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) " ~ Please read me

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Iij I I 線 540070 A7 B7 五、發明說明（1 )表⑴ 經濟部智慧財產局員工消費合作社印製 角度 深度 燒成後裂開 分割成功率 遷移 5° 5% 0% 3 0% 4rrr ΙΎΤΓ / \\\ 10% 0% 80% ΤΓΓΠ J \ \\ 30% 0% 100% Μ j \\\ 50% 0% 100% Μ j\\\ 90% 0% 100% ±ΠΕ 95% 25% 100% M j \\\ 10° 5% 0% 45% te j w\ 10% 0% 100% fiEE j \\\ 30% 0% 100% M j \\\ 50% 0% 100% M j \\\ 90% 0% 100% M 95% 32% 100% M j \ \\ 30° 5% 0% 55% fiE j \ \\ 10% 0% 100% iffi j\\\ 30% 0% 100% M ^ \ \ \ 50% 0% 100% iffi y \ \ \ 90% 0% 100% ^frrr 95% 28% 100% J \ w 60° 5% 0% 50% te j \ w 10% 0% 100% 4ur. ΤΓΤΓ y \ \\ 30% 0% 100% M ^ \ w 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 請 先 閱 讀 背 之 注 意 事 .項Iij II line 540070 A7 B7 V. Description of the invention (1) Table 印 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, the employee consumer cooperative prints the angle after the deep firing, and the splitting success rate migrates 5 ° 5% 0% 3 0% 4rrr \ 10% 0% 80% ΤΓΓΠ J \ \\ 30% 0% 100% Μ j \\\ 50% 0% 100% Μ j \\\ 90% 0% 100% ± ΠΕ 95% 25% 100% M j \\\ 10 ° 5% 0% 45% te jw \ 10% 0% 100% fiEE j \\\ 30% 0% 100% M j \\\ 50% 0% 100% M j \\\ 90% 0 % 100% M 95% 32% 100% M j \ \\ 30 ° 5% 0% 55% fiE j \ \\ 10% 0% 100% iffi j \\\ 30% 0% 100% M ^ \ \ \ 50% 0% 100% iffi y \ \ \ 90% 0% 100% ^ frrr 95% 28% 100% J \ w 60 ° 5% 0% 50% te j \ w 10% 0% 100% 4ur. ΤΓΤΓ y \ \\ 30% 0% 100% M ^ \ w 11 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) Please read the notes on the back first.

540070 A7 B7 五、發明說明（β ) 50% 0% 100% dnc 111Γ j w\ 90% 0% 100% 4rni Till j \w 95% 3 8% 100% 4πΤ- ΓιτΓ j \w 80° 5% 0% 25% 4jjr. tltt >»\ % 10% 0% 100% 4E j\\\ 3 0% 0% 100% >frrr itTT： > V N Λ 50% 0% 100% 4rrr. ittt! ^ \w 90% 0% 100% 4rrr. TlTt! j \ w 95% 26% 100% jw\ 90° 5% 0% 30% 4nt： utv. j \\\ 10% 0% 100% M 3 0% 0% 100% 產生 50% 0% 100% j \\\ 90% 0% 100% 產生 95% 25% 100% 產生 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線泰 經濟部智慧財產局員工消費合作社印制衣 表1中顯示，因槽角度和深度的値之不同，有關燒成 後裂開、分割成功率、遷移有無產生之實驗結果。這時， 角度係如圖9所示般之槽頂端的內角。又槽深度是以槽最 深部/熱敏電阻基板厚度X 100%來求出。燒成後裂開是 n=l〇〇個基板時的裂開比例，分割成功率是n=100個基板 時的成功比例。又有關遷移，係調查以高溫連續通電1〇〇〇 小時後因遷移所致的短路不良產生之有無。 由表1可明顯的看出，本案之槽角度10〜80° 、深度 10%〜90%的範圍爲較佳。 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 540070 經濟部智慧財產局員工消費合作社印制衣 A7 B7 五、發明說明（) 〔發明效果〕 依據請求項1所記載的發明之熱敏電阻元件的製造方 法，將一面形成有複數道的槽之熱敏電阻未處理基板燒成 而得出熱敏電阻母基板後，在熱敏電阻母基板的兩面形成 電極，藉由沿著槽分割該熱敏電阻母基板以得出各個熱敏 電阻元件。因此，由於從熱敏電阻未處理基板的準備步驟 到分割成各個熱敏電阻元件之分割步驟都能以母基板的狀 態來進行，故能有效的提高熱敏電阻元件的量產性。 依據請求項2所記載的發明，由於藉將陶瓷漿薄片成 形以得出熱敏電阻未處理基板，熱敏電阻未處理基板的厚 度可薄到〇.4mm以下，藉此可謀求最終所得的各個熱敏電 阻兀件的低電阻値化。亦即，習知例的PTC熱敏電阻之製 造方法’由於在得出熱敏電阻基板時是使用乾壓成形法， 其基板厚無法成爲0.5mm以下，低電阻値化有界限存在。 相對於此，請求項2所記載的發明，由於是藉由將陶瓷漿 薄片成形來得出熱敏電阻未處理基板，故可得出上述般之 厚度是以往無法得出的極薄熱敏電阻未處理基板。 請求項3所記載的發明，由於電極是藉濺鍍來形成， 在形成用以和熱敏電阻基板行電阻接觸的電極膜時，將能 有效的提咼電阻接觸的安定性。亦即，以往的PTC熱敏電 阻製造方法’由於行電阻接觸的電極是藉無電解鍍敷法來 形成，電阻接觸的安定性不足，而造成電阻値上昇的原因 。相對於此，請求項3所記載的發明，由於電極之電阻接540070 A7 B7 V. Description of the Invention (β) 50% 0% 100% dnc 111Γ jw \ 90% 0% 100% 4rni Till j \ w 95% 3 8% 100% 4πΤ- ΓιτΓ j \ w 80 ° 5% 0% 25% 4jjr. Tltt > »\% 10% 0% 100% 4E j \\\ 3 0% 0% 100% > frrr itTT: > VN Λ 50% 0% 100% 4rrr. Ittt! ^ \ W 90% 0% 100% 4rrr. TlTt! J \ w 95% 26% 100% jw \ 90 ° 5% 0% 30% 4nt: utv. J \\\ 10% 0% 100% M 3 0% 0% 100 % Generated 50% 0% 100% j \\\ 90% 0% 100% Generated 95% 25% 100% Generated (Please read the precautions on the back before filling this page) Installation -------- Order- -------- Table 1 of the printed clothing of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the Thai line shows that due to the difference in the angle and depth of the groove, the cracking after firing, the success rate of segmentation, and the occurrence of migration Experimental results. At this time, the angle is the inner angle of the top end of the groove as shown in FIG. 9. The groove depth was determined by the deepest portion of the groove / thermistor substrate thickness X 100%. The cracking after firing is the cracking ratio when n = 100 substrates, and the segmentation success rate is the successful ratio when n = 100 substrates. Regarding migration, it investigates whether the short-circuit failure caused by the migration is caused by continuous current application at high temperature for 1,000 hours. It can be clearly seen from Table 1 that the groove angles of 10 to 80 ° and the depths of 10% to 90% in this case are better. This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 540070 Printed clothing A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () [Invention effect] According to the request in item 1 In the method for manufacturing a thermistor element of the invention, after firing a thermistor unprocessed substrate having a plurality of grooves on one side to obtain a thermistor mother substrate, electrodes are formed on both sides of the thermistor mother substrate. The thermistor mother substrate is divided along the grooves to obtain individual thermistor elements. Therefore, since the steps of preparing the thermistor unprocessed substrate and dividing into individual thermistor elements can be performed in the state of the mother substrate, the mass productivity of the thermistor element can be effectively improved. According to the invention described in claim 2, since the thermistor unprocessed substrate is obtained by forming a ceramic paste sheet, the thickness of the thermistor unprocessed substrate can be as thin as 0.4 mm or less. Low resistance of the thermistor element. That is, in the conventional method for manufacturing a PTC thermistor ', since the thermistor substrate is obtained by using a dry pressing method, the thickness of the substrate cannot be less than 0.5 mm, and there is a limit to low resistance. On the other hand, since the invention described in claim 2 obtains a thermistor unprocessed substrate by forming a ceramic paste sheet, it can be concluded that the thickness as described above is a very thin thermistor that could not be obtained in the past. Process the substrate. According to the invention described in claim 3, since the electrode is formed by sputtering, when forming an electrode film for resistance contact with the thermistor substrate, the stability of the resistance contact can be effectively improved. That is, in the conventional PTC thermistor manufacturing method ', since the electrodes in the row resistance contact are formed by the electroless plating method, the stability of the resistance contact is insufficient, which causes the resistance to increase. On the other hand, the invention described in claim 3 requires the resistance of the electrode to be connected.

540070 B7 五、發明說明（α) 觸良好，提供出電阻値更低的熱敏電阻元件將變得可能。 請求項4所記載的發明中，係使用PTC熱敏電阻元件 作爲熱敏電阻元件，因此，將能有效率的生產出以往所無 法得出之低電阻値的PTC熱敏電阻元件 〔圖式之簡單說明〕 圖1(a)及(b)，係本發明的一實施例中所準備的熱敏電 阻未處理基板之俯視圖和部分擴大截面圖。· 圖2係顯示本發明的一實施例中所準備的槽形成前之 熱敏電阻未處理基板之立體圖。 圖3係顯示圖1所示的熱敏電阻未處理基板燒成後’ 在兩面形成電極後的狀態之部分切除截面圖。 圖4係本發明的一實施例所得的熱敏電阻元件之前視 圖。 圖5係顯示圖4所示的熱敏電阻元件之外觀的立體圖 圖6係爲了說明PTC熱敏電阻元件的特性之PTC電 請 閱 讀 背 $ ‘項 填 頁540070 B7 V. Description of the invention (α) The contact is good, and it becomes possible to provide a thermistor element with lower resistance 値. In the invention described in claim 4, since a PTC thermistor element is used as the thermistor element, a PTC thermistor element with a low resistance 値, which cannot be obtained in the past, can be efficiently produced. Brief description] Figures 1 (a) and (b) are a top view and a partially enlarged cross-sectional view of a thermistor untreated substrate prepared in an embodiment of the present invention. Fig. 2 is a perspective view showing a thermistor unprocessed substrate before groove formation prepared in an embodiment of the present invention. Fig. 3 is a partially cutaway cross-sectional view showing a state after firing the thermistor unprocessed substrate shown in Fig. 1 after electrodes are formed on both sides. Fig. 4 is a front view of a thermistor element obtained according to an embodiment of the present invention. Fig. 5 is a perspective view showing the appearance of the thermistor element shown in Fig. 4 Fig. 6 is a PTC circuit for explaining the characteristics of the PTC thermistor element Please read back

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I I I 4 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製 阻値躍進比例的圖。 圖7係顯示實施例中，令熱敏電阻未處理基板的厚度 變化時最終所得的PTC熱敏電阻元件的電阻値變化的圖° 圖8係顯示以往的PTC熱敏電阻元件的一例之立體_ 〇 圖9係顯示本發明實施例中槽前端的內角之說明圖。 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 540070 A7 __B7 五、發明說明（d ) 〔符號說明〕 1…熱敏電阻未處理基板 1A…熱敏電阻母基板 1B…熱敏電阻基板 2、3…槽 4…Cr膜 5".Ni - Cu 膜 6"·Ag 膜 7--PTC熱敏電阻元件 8、9···電極 (請先閒讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）I I I 4 The Ministry of Economic Affairs and Intellectual Property Bureau's Consumer Cooperatives printed a graph of the proportion of resistance to leaps and bounds. Fig. 7 is a diagram showing the change in resistance of the PTC thermistor element finally obtained when the thickness of the thermistor unprocessed substrate is changed in the embodiment. Fig. 8 is a three-dimensional view showing an example of a conventional PTC thermistor element. 〇 FIG. 9 is an explanatory diagram showing the inner angle of the front end of the groove in the embodiment of the present invention. This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 540070 A7 __B7 V. Description of the invention (d) [Symbol] 1 ... Thermistor untreated substrate 1A ... Thermistor mother substrate 1B ... Thermistor substrates 2, 3 ... Slot 4 ... Cr film 5 " Ni-Cu film 6 " · Ag film 7--PTC thermistor element 8,9 ·· electrode (please read the precautions on the back first and then (Fill in this page) Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

540070540070 六、申請專利範圍 1、 一種熱敏電阻元件之製造方法，其特徵在於，係具 備： (請先閲讀背面之注意事項再塡寫本頁) 準備出一面形成有爲了分割成各個熱敏電阻元件的複 數道槽之熱敏電阻未處理基板的步驟； 將前述熱敏電阻未處理基板燒成而得出熱敏電阻母基 板的步驟； 在前述熱敏電阻母基板的兩面藉濺鑛來形成電極的步 驟；以及 藉由沿著前述槽分割前述形成有電極之熱敏電阻母基 板’以得出各個熱敏電阻元件的步驟。 2、 如申請專利範圍第1項之熱敏電阻元件之製造方法 ’其中前述用以得出熱敏電阻未處理基板的步驟，係藉由 將陶瓷漿薄片成形來進行，且前述熱敏電阻未處理基板的 厚度爲0.4mm以下。 3、 如申請專利範圍第1或2項之熱敏電阻元件之製造 方法，其中前述熱敏電阻元件爲PTC熱敏電阻元件。 1 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Scope of Patent Application 1. A method for manufacturing a thermistor element, which is characterized by: (Please read the precautions on the back before writing this page) One side is prepared to be divided into thermistor elements The thermistor unprocessed substrate of a plurality of grooves; the step of firing the thermistor unprocessed substrate to obtain a thermistor mother substrate; and forming electrodes by sputtering on both sides of the thermistor mother substrate And the step of obtaining each thermistor element by dividing the aforementioned thermistor mother substrate with electrodes formed along the grooves. 2. For the manufacturing method of the thermistor element according to item 1 of the scope of the patent application, wherein the steps for obtaining the untreated substrate of the thermistor are performed by forming a ceramic paste sheet, and the thermistor is not The thickness of the processing substrate is 0.4 mm or less. 3. The manufacturing method of the thermistor element as described in the first or second patent application range, wherein the aforementioned thermistor element is a PTC thermistor element. 1 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)