TW538462B - Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same - Google Patents

Abstract

A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Description

五、發明說明（1) 【發明背景 1 ·發明之領域 本發明係關於一種用以製造半 一種冷壁化學氣相沈積 h又備，尤有關於 法。 顶夂此δ又備之—腔室的潔淨方 2 ·相關技術之描述 各領域之新材料的開發 體電路uLSI)之各種大▲積體電：Ί且如超大型積 P歼1發的迅速發展而發展。即）也因新材料 導體層、及導俨羼笪m #企、。马用以形成如絕緣層、半 ㈣域中構置；薄膜的新 丨又付如超大型積體電路 二LS父之大型積體電路（Lsi)。當社會進步到電資路 -導體=斤 =法優的完全移除等條件的^ :r 相較於其它沈積方法而言，化學氣相沈積方法具 f。夕憂點，故其已經常被用於半導體裝置的製造方法。 藉由，用化學氣相沈積方法而選擇性地在基板之特定區域 成長晶教以形成薄膜的選擇性磊晶成長（SEG )方法係用 於型積體電路（LSI)或上述超大型積體電路（ulsi )專和體笔路的製造程序。現在，尤其將選擇性蠢晶成長 538462 五、發明說明（2) 方法用於使如氧化矽（Si〇2)或氮化矽（Si3N4 )等絕緣膜 形成在石夕基板上之線圖案中且選擇性地將矽薄膜累積在矽 基板之暴露區域中的積體電路製造程序。 ^ 圖1為習知熱壁化學氣相沈積設備的概略平面圖。熱 $化學氣相沈積設備2為進行矽之選擇性磊晶成長處理的 口又備之一。熱壁化學氣相沈積設備2包括腔室4及由三區段 之，阻加熱器6所加熱之腔室4的壁部。在熱壁化學氣相沈 積Γ備中之在晶圓上的矽薄膜形成處理如下所述。首先， 字曰曰圓載入至熱壁化學氣相沈積設備2的腔室&中，並繼而 成長為薄膜的源氣體供應至腔室4中。接著，藉由三 二& ^甩阻加熱器6而加熱腔室4。繼而在腔室4的高溫條 1藉由在晶圓上成長矽晶體而使矽薄膜形成在晶圓上。 蘇Ϊ，為將腔室4的壁部加熱至高溫，故難以使源氣體 沈積在腔室壁部的内表面上。源氣體在腔室4之内 :^ Ϊ積具有以下缺點。首先，由於無意的沈積而增 德，^ 0’知失。第二，當沈積處理完成而腔室4冷卻之 #率罢Ξ為腔至壁部與沈積在腔室壁部上之薄膜之間的收 使腔室4產生破裂。第三，因為腔室彳的内部條 ，7溫情況，故沈積在腔室内壁部上之石夕甲烧 石夕烧（Sl2H6)等源氣體係活躍地被氣化，因 (Si3^ 成長超過50〇1、率。因此，難以在這樣的條件下使石夕晶體 风长超過500埃。所以，冷壁化悤# 版 以克服上述問題。 予氣相沈積設備已被提出V. Description of the invention (1) [Background of the invention 1 · Field of the invention The present invention relates to a method for manufacturing a semi-cold cold wall chemical vapor deposition, especially a method. Top of this δ—the clean side of the chamber 2 · Description of related technologies Description of various fields of development of new materials in various fields uLSI) Various integrated circuits: Ί and as fast as the super large product P annihilates 1 Development and development. That is, due to the new material, the conductive layer, and the conductive layer. Horses are used to form structures such as insulating layers and semi-unitary regions; the new thin films also serve as large-scale integrated circuits (Lsi) of two LS fathers. When society progresses to the condition of complete removal of electricity-conductor-conductor = jin = fayou ^: r Compared with other deposition methods, the chemical vapor deposition method has f. Even if it is worried, it has been often used in manufacturing methods of semiconductor devices. The selective epitaxial growth (SEG) method by which a crystal is selectively grown on a specific region of a substrate by a chemical vapor deposition method to form a thin film is used for a type integrated circuit (LSI) or the above-mentioned super-large integrated circuit Circuit (ulsi) special and body pen manufacturing process. Now, especially selective crystal growth is 538462. 5. Description of the invention (2) The method is used to form an insulating film such as silicon oxide (SiO2) or silicon nitride (Si3N4) in a line pattern on a stone substrate and Integrated circuit manufacturing process for selectively accumulating silicon films in exposed areas of a silicon substrate. ^ Figure 1 is a schematic plan view of a conventional hot wall chemical vapor deposition apparatus. Thermal chemical vapor deposition equipment 2 is one of the facilities for selective epitaxial growth of silicon. The hot wall chemical vapor deposition apparatus 2 includes a chamber 4 and a wall portion of the chamber 4 heated by a three-block resistance heater 6. The process of forming a silicon thin film on a wafer in the preparation of hot wall chemical vapor deposition is as follows. First, the word circle is loaded into the chamber & of the hot wall chemical vapor deposition apparatus 2, and then a source gas, which grows into a thin film, is supplied into the chamber 4. Next, the chamber 4 is heated by the tri-amplifier heater 6. Then, in the high-temperature strip 1 of the chamber 4, a silicon thin film is formed on the wafer by growing silicon crystals on the wafer. In order to heat the wall portion of the chamber 4 to a high temperature, it is difficult to deposit the source gas on the inner surface of the wall portion of the chamber. The source gas is within the chamber 4: The accumulation has the following disadvantages. First, due to unintentional deposition, gains are lost. Second, when the deposition process is completed and the chamber 4 is cooled, the rate of the chamber 4 is caused by the collapse between the chamber-to-wall portion and the thin film deposited on the chamber wall portion. Third, due to the internal strips of the chamber 彳 and the temperature of 7 ° C, source gas systems such as Shi Xi Jia Shao Shi Xi Ya (Sl2H6) deposited on the inner wall of the chamber are actively gasified, because (Si3 ^ growth exceeds Therefore, it is difficult to make Shixi crystal wind grow more than 500 angstroms under such conditions. Therefore, cold-walled 悤 # version is used to overcome the above problems. Pre-vapor deposition equipment has been proposed

第8頁 538462 五、發明說明（3) 冷壁化學氣相沈積設備包括腔室及位在腔室中之晶 座。晶座包括位在其内的加熱器。在將腔室内部抽直空之 後，啟動晶座加熱器以加熱晶座。當晶座藉由加熱器而加 熱時’亦間接地加熱晶座上之晶圓。 圖2為顯示習知冷壁化學氣相沈積設備的橫剖面圖。 習知冷壁化學氣相沈積設備20包括腔室22、排氣單元以盥 30、及$體供應單元24。腔室22為進行薄膜沈積與電性接 地的所在。將晶座36定位在腔室22之中，並使矽材料所形 成之晶，34載入至晶座36上。排氣單元28與3〇係用以排出 腔室22中的空氣。氣體供應單元24則用以貯存源氣體並將 源氣體供應至腔室22中。排氣單元28與3〇係由第一排氣單 元30及第二排氣單元28所構成。第一排氣單元⑽係用於腔 室22内部的全部區域，及第二排氣單元㈣主要用於晶座 36的周圍。排氣單元28與3〇中係包括使用渦輪分子式泵浦 的超南真空（UHV)排氣系統，故腔室22的内部亦包括超 高真空排^系、统’尤其在進行薄膜沈積處理的晶座36周圍 將變成超尚真空狀態。將晶座36固定在腔室22的底部， 將待沈積薄膜之晶圓34放置在晶座36上。晶座36通常由 成晶圓的矽材料所構成，舉例而言，如石墨或碳化矽 (SiC )等不會損害晶圓34的材料。晶座36包括加熱器 及内部電極38。以形成在晶圓34上之薄膜的相同材料°° 熱反射H32 ’並將熱反射器32定位在晶座36的上方 射器32係反射從晶圓34與晶座36放射出來的輻射熱而 回到晶圓34而提高作用在腔室22中之晶圓34的加熱效率： 538462 五、發明說明（4) 在薄膜沈積處理期間，薄膜材料不僅不宜沈積在晶圓上， 更不宜沈積在熱反射器32上，因此以晶圓34上之薄膜的相 =材料开》成熱反射器3 2以預防沈積在熱反射器3 2上之薄膜 材料免於輕易地與熱反射器32分離。使射頻（RF)電極33 形成在熱反射|§32中，其藉由射頻（RF )電源35而在射頻 (RF )電極33與内部電極38之間形成電場。冷壁化學氣相 沈積設備20更包括用以冷卻腔室22之壁部的冷卻裝置。 以下參見圖2及圖3，以說明冷壁化學氣相沈積設備中 之薄膜沈積處理。晶圓3 4係經由槽閥2 6而從外部傳入腔室 22之，，並接著將其載入晶座36之上。藉由第一排氣單元 30與第二排氣單元28而使腔室22的内部狀態繼而變成ι〇 1 陶爾（Tor )的超高真空狀態。因為晶座％在晶圓載入晶 座3 6之上鈾已經藉由加熱器3 7而加熱，故將晶圓3 4加熱至 通常，700 °c的某一溫度，並接著經由氣體供應單元24而 將源氣，供應至腔室2 2中。此時，因為腔室2 2的内部處於 超高真空狀態，故藉由源氣體在腔室22中的散射而到達晶 圓34。因為晶圓34已如上所述地被晶座36中的加熱器37所 加熱二故當源氣體到達晶圓34的表面時，其分解成各成分 並接著沈積在晶圓34上。舉例而言，經常使用氧化矽 (S曰i〇=)膜或氮化矽)膜等絕緣膜而使線圖案形成 在aa4的表面上。晶圓μ的表面包括使石夕等構成晶圓^ 之材料二路在工氣中的表面區域，並包括使氧化梦（$ 土 ％ 膜或氮化石夕（Si3N4 )膜等絕緣膜暴露在空氣中的表面▲ 域。因為在石夕表面上的反應速率遠大於在氧化矽（Si 02) 第10頁 538462 五、發明說明（5) 膜表面或氣化石夕（S N4 )膜表面上的反應速率，故將選擇 性地使石夕僅累積在晶圓3 4的石夕表面上。 使石夕晶體選擇性地成長在晶圓3 4之表面上的冷壁化學 氣相沈積設備2 0具有以卞一些缺點。首先，由於對晶圓3 4 的不規則加熱，故薄膜無法均勻地形成在晶圓表面上。 即，冷壁化學氣相沈積設備僅包括晶座3 6中之加熱器3 7當 作熱源，因此在晶圓34的上表面與晶圓34的下表面之間將 產生溫度差。而此上表面舆下表面之間的溫度差將造成整 個晶圓3 4的不規則溫度分佈，故導致矽晶體之成長率將隨 著晶圓34的區域而異。因為源氣體在晶圓表面上的沈積速 率與晶圓34的溫度成比例·，故晶圓34上的不同溫度分佈將 導致薄膜無法均勻地形成在晶圓3 4上。若已經有其它元素 形成在晶圓3 4上時，則將因為其它元素所形成的段差而使 不規=的沈積現象變得更嚴重。舉例而言，當有1 t的溫 度差0守’多晶矽的沈積速率將出現2 · 〇 %至2. 5 %的差異。 圖3為顯示晶圓34與習知冷壁化學氣相沈積設備2〇中之冷 壁之間的溫度差之圖形。如圖所示，冷壁的溫度經常維持 在2〇°C而晶座36的溫度則經常維持在7〇()χ：。因此，晶圓 34的士表面與其舆晶座36接觸之下表面之間將存在25它的 冷壁化學氣相沈積設備2 〇的另一缺點為薄膜亦不適宜 =形^在熱反射器32上並接著成為污染材料而與熱反射器 即，若在重複的沈積處理期間所沈積在熱反射器 勺溥膜厚度變厚時，沈積在熱反射器32上之薄膜將由Page 8 538462 V. Description of the invention (3) The cold wall chemical vapor deposition equipment includes a chamber and a crystal seat in the chamber. The wafer holder includes a heater positioned therein. After evacuating the inside of the chamber, the wafer heater was started to heat the wafer seat. When the wafer base is heated by a heater, it also indirectly heats the wafer on the wafer base. FIG. 2 is a cross-sectional view showing a conventional cold wall chemical vapor deposition apparatus. The conventional cold wall chemical vapor deposition apparatus 20 includes a chamber 22, an exhaust unit 30, and a body supply unit 24. The chamber 22 is where the thin film deposition and electrical grounding are performed. The crystal base 36 is positioned in the cavity 22, and a crystal 34 formed of a silicon material is loaded on the crystal base 36. The exhaust units 28 and 30 are used to exhaust the air in the chamber 22. The gas supply unit 24 is used to store the source gas and supply the source gas into the chamber 22. The exhaust units 28 and 30 are composed of a first exhaust unit 30 and a second exhaust unit 28. The first exhaust unit ⑽ is used for the entire area inside the chamber 22, and the second exhaust unit ㈣ is mainly used around the crystal base 36. The exhaust units 28 and 30 include ultra-high vacuum (UHV) exhaust systems using turbo molecular pumps, so the interior of the chamber 22 also includes ultra-high vacuum exhaust systems, especially for thin film deposition processes. The periphery of the wafer base 36 will become a super vacuum state. The wafer base 36 is fixed on the bottom of the chamber 22, and the wafer 34 on which the thin film is to be deposited is placed on the wafer base 36. The wafer base 36 is generally composed of a silicon material forming a wafer. For example, graphite or silicon carbide (SiC) will not damage the material of the wafer 34. The wafer base 36 includes a heater and an internal electrode 38. With the same material as the thin film formed on the wafer 34 °, heat reflection H32 'and positioning the heat reflector 32 above the base 36. The emitter 32 reflects the radiant heat emitted from the wafer 34 and the base 36 and returns. To the wafer 34 to improve the heating efficiency of the wafer 34 acting in the chamber 22: 538462 V. Description of the invention (4) During the thin film deposition process, the thin film material should not only be deposited on the wafer, but also should not be deposited on thermal reflection. Therefore, the thermal reflector 32 is formed by using the phase of the thin film on the wafer 34 as the material to prevent the thin film material deposited on the thermal reflector 32 from being easily separated from the thermal reflector 32. The radio frequency (RF) electrode 33 is formed in a thermal reflection | §32, which forms an electric field between the radio frequency (RF) electrode 33 and the internal electrode 38 by a radio frequency (RF) power source 35. The cold wall chemical vapor deposition apparatus 20 further includes a cooling device for cooling the wall portion of the chamber 22. 2 and 3, the thin film deposition process in a cold wall chemical vapor deposition apparatus will be described below. The wafer 34 is introduced into the chamber 22 from the outside through the slot valve 26, and then loaded onto the wafer base 36. The first exhaust unit 30 and the second exhaust unit 28 change the internal state of the chamber 22 to an ultra-high vacuum state of Tor 1. Since the wafer% is loaded on the wafer 36, the uranium has been heated by the heater 37, so the wafer 34 is heated to a temperature of usually 700 ° C, and then passed through the gas supply unit. 24 and the source gas is supplied into the chamber 22. At this time, since the inside of the chamber 22 is in an ultra-high vacuum state, the crystal circle 34 is reached by scattering of the source gas in the chamber 22. Since the wafer 34 has been heated by the heater 37 in the wafer base 36 as described above, when the source gas reaches the surface of the wafer 34, it is decomposed into various components and then deposited on the wafer 34. For example, an insulating film such as a silicon oxide (SiO2) film or a silicon nitride film is often used to form a line pattern on the surface of aa4. The surface of the wafer μ includes a surface area in which the materials constituting the wafer ^ such as Shi Xi are two-way in the working gas, and includes an insulating film such as an oxide dream ($ soil% film or a nitride nitride film (Si3N4) film) is exposed to the air. Surface ▲ domain. Because the reaction rate on the surface of Shi Xi is much higher than that on the surface of silicon oxide (Si 02) Page 10 538462 V. Description of the invention (5) The reaction on the surface of the film or the surface of the gasified stone (S N4) film Rate, it will selectively cause Shi Xi to only accumulate on the surface of Shi Xi on wafer 34. The cold wall chemical vapor deposition equipment 20 for selectively growing Shi Xi crystals on the surface of wafer 34 has To overcome some disadvantages. First, due to the irregular heating of the wafer 3 4, the thin film cannot be uniformly formed on the wafer surface. That is, the cold wall chemical vapor deposition equipment includes only the heater 3 in the wafer base 3 6. 7 is used as a heat source, so a temperature difference will occur between the upper surface of the wafer 34 and the lower surface of the wafer 34. The temperature difference between the upper surface and the lower surface will cause an irregular temperature of the entire wafer 34 Distribution, so the growth rate of silicon crystals will vary with the area of wafer 34 Because the deposition rate of the source gas on the wafer surface is proportional to the temperature of the wafer 34, the different temperature distribution on the wafer 34 will cause the thin film to not be uniformly formed on the wafer 34. If there are other elements already When formed on the wafer 34, the irregular deposition phenomenon becomes more serious due to the step difference formed by other elements. For example, when there is a temperature difference of 1 t, the deposition rate of polycrystalline silicon will be A difference of 2.0% to 2.5% occurs. Figure 3 is a graph showing the temperature difference between the wafer 34 and the cold wall in the conventional cold wall chemical vapor deposition equipment 20. As shown in the figure, the cold The temperature of the wall is often maintained at 20 ° C and the temperature of the wafer seat 36 is often maintained at 70 () χ: Therefore, there will be 25 between the surface of the taxi 34 of the wafer 34 and the surface below the wafer seat 36. Another disadvantage of the cold wall chemical vapor deposition equipment 2 is that the thin film is also not suitable. It is shaped on the thermal reflector 32 and then becomes a contaminating material. That is, if it is deposited during repeated deposition processes, Thin film deposited on the heat reflector 32 when the thickness of the heat reflector spoon film becomes thicker By the

f 11頁 538462 五、發明說明（6) 於其重量而變成與熱反射器32分離，並呈粉末的型式而微 粒般地在腔室2 2中到處浮動。若這些分離之薄膜微粒附著 在晶圓34之上的元素時，則其將成為雜質因而降低晶圓34 之元素的可靠度。 【發明的綜合說明】 因此’本發明係針對冷壁化學氣相沈積設備及此設備 之一腔室的潔淨方法，其實質上消除相關技術之限制與缺 點所產生的一或多個問題。 本發明之一優點係提供一種冷壁化學氣相沈積設備， 其中晶座在薄膜沈積處理期間係上下移動而克服在晶圓上 的不規則薄膜沈積、及提供熱反射器，其上之窗孔係塗佈 有或形成有石英、或使氧化矽（s i % )形成在其上。 本發明之另一優點係提供一種冷壁化學氣相沈積設備 ^腔室的潔淨方法’其中晶座係上下地移動，且如六I化 ^ ( SF6 )電聚氣體等潔淨氣體的移動方向係藉由電極的 開關操作而改變，俾能較習知潔淨方法更有效地清潔腔 室。 本發明之其他目的及優點由隨後之詳細說明及隨附之 申請專利範圍當可更加明白。 為了達成本發明之各種優點及目的，如以下具體例子 及廣泛說明，冷壁化學氣相沈積設備包括：一腔室；一晶 ^，藉由一驅動裝置而可在腔室内上下移動，晶座則包括 一加熱器與一内部電極；一熱反射器，位在晶座之上方，f Page 11 538462 V. Description of the invention (6) Due to its weight, it becomes separated from the heat reflector 32 and floats in the chamber 22 in the form of a powder in the form of a powder. If these separated thin film particles adhere to the elements on the wafer 34, they will become impurities and reduce the reliability of the elements on the wafer 34. [Comprehensive description of the invention] Therefore, the present invention is directed to a cold wall chemical vapor deposition equipment and a method for cleaning a chamber of the equipment, which substantially eliminates one or more problems caused by the limitations and disadvantages of the related technology. An advantage of the present invention is to provide a cold wall chemical vapor deposition device, in which a crystal base is moved up and down during a thin film deposition process to overcome irregular thin film deposition on a wafer, and a thermal reflector is provided, and a window hole is provided thereon. It is coated or formed with quartz, or a silicon oxide (si%) is formed thereon. Another advantage of the present invention is to provide a method for cleaning a cold-wall chemical vapor deposition device ^ chamber, wherein the crystal seat system is moved up and down, and the direction of movement of a clean gas such as SF6 (SF6) electro-polymerized gas is moved. By changing the switching operation of the electrodes, the chamber can be cleaned more effectively than conventional cleaning methods. Other objects and advantages of the present invention will become clearer from the following detailed description and the scope of the accompanying patent application. In order to achieve the various advantages and objectives of the invention, as shown in the following specific examples and extensive descriptions, cold wall chemical vapor deposition equipment includes: a chamber; a crystal, which can be moved up and down in the chamber by a driving device, a crystal seat It includes a heater and an internal electrode; a heat reflector is located above the crystal base,

第12頁 538462Page 12 538462

曰曰 五、發明說明（7) 熱反射器係將從加熱器所放射的一熱反射回晶座上之 圓並當作連接至内部電極的一相對電極；一加熱器控制單 兀，、連接至晶圓、加熱器、及驅動裝置，加熱器控制單元 係感測晶圓的一温度，而晶座則依據溫度而移動；一氣體 供應單元，係供應氣體至腔室；及一電源，係施加一帝 至腔室。 堂 在另一樣態中，一種冷壁化學氣相沈積設備之一腔室 的潔淨方法，冷壁化學氣相沈積設備係包括具有一内部電 極的一晶座、一熱反射器、晶座所用之一驅動裝置、選擇 性地施加一電壓至熱反射器或内部電極的一電源、及一氣 體供應單元，包含以下步驟：從氣體供應單元供應潔淨氣 體至腔室；施加電壓至熱反射器並同時使内部電極接地； 施加電壓至内部電極並同時使熱反射器接地；及藉由驅動 裝置上下地移動晶座，同時將電壓施加至熱反射或内部 電極。 吾人應理解到前述之說明及以下之詳細說明係用以示 範及解說，俾能更詳細地說明本發明。 【較佳實施例之詳細說明】 以下參見附圖，俾說明本發明之實施例。 本發明之特徵為：冷壁化學氣相沈積設備係包括可動 的晶座、及具有位在其上之窗孔與加熱器控制單元的熱反 射器。本發明之晶座係上下移動，俾能減少晶圓之上表面 與下表面之間的溫度差。將熱反射器的窗孔形成在熱反射V. Description of the invention (7) The heat reflector reflects a heat radiated from the heater back to the circle on the crystal base and serves as an opposite electrode connected to the internal electrode; a heater control unit, and a connection To the wafer, the heater, and the driving device, the heater control unit senses a temperature of the wafer, and the wafer holder moves according to the temperature; a gas supply unit supplies gas to the chamber; and a power supply, Apply one emperor to the chamber. In another aspect, a method for cleaning a chamber of a cold wall chemical vapor deposition device, the cold wall chemical vapor deposition device includes a crystal base with an internal electrode, a thermal reflector, and a crystal base. A driving device, a power source for selectively applying a voltage to a heat reflector or an internal electrode, and a gas supply unit include the following steps: supplying clean gas from the gas supply unit to the chamber; applying a voltage to the heat reflector and simultaneously Ground the internal electrode; apply a voltage to the internal electrode and ground the thermal reflector at the same time; and move the crystal holder up and down by a driving device while applying a voltage to the thermal reflection or the internal electrode. I should understand that the foregoing description and the following detailed description are for illustration and explanation, so that the present invention can be explained in more detail. [Detailed description of the preferred embodiment] The following describes embodiments of the present invention with reference to the drawings. The invention is characterized in that the cold wall chemical vapor deposition equipment comprises a movable crystal base and a heat reflector having a window hole and a heater control unit located thereon. The crystal base of the invention moves up and down, which can reduce the temperature difference between the upper surface and the lower surface of the wafer. Form the window hole of the heat reflector in the heat reflection

538462538462

裔上’俾能控制薄膜材料免於沈積在熱反射器上。加熱器 控制單元係控制加熱器的溫度及晶座的移動。 到晶圓6 4 ’俾提高作用在晶圓6 4的加熱效率 形成熱反射器6 2並將其當作供射頻（)電 的另一電極’俾形成腔室52中之電場。以 圖4顯示依據本發明之冷壁化學氣相沈積設備的橫剖 面圖。如圖所示，冷壁化學氣相沈積設備5 0包括腔室5 2、 排氣單元58與60、及氣體供應單元54。使腔室52呈電性接 地1排氣單元5 8與6 0則用以排出腔室5 2中的空氣。氣體供 應^元54係用以將源氣體材料供應至腔室52中。排氣單元 由第:排氣單元60及第二排氣單元58所構成。第一排氣單 元30係用於腔室52内部的全部區域及第二排氣單元58係主 ^用於曰曰座66的周圍。排氣單元58與6〇中係包括使用渦輪 分子式泵浦的超高真空（UHV)排氣系統，故腔室52的内 部亦包括超高真空排氣系統，尤其在進行薄膜沈積處理的 晶座66周圍將變成超高真空狀態。將晶座“定位在腔室52 =亚由支撐器68所支撐。將其上沈積薄膜的晶圓64放置在 曰曰座6 6上。且以構成晶圓的矽材料構成晶座6 6，舉例而 了，如石墨或碳化矽（SiC)等不會損害晶圓64的材料。 晶座66具有用以加熱晶座66上之晶圓64的加熱器”及者 用二形成腔室52中之電場的電極之一的内部電極6g。晶座 =係上下移動且藉由連接至支撐器68的馬達7()而驅使 =動。將熱反射器62定位在腔室52中之晶座“的上 俾藉由反射從晶圓64與晶座66放射出來的门 。以金屬材料 )電壓施加至其上 以如石英或氧化矽This method can control the film material from being deposited on the heat reflector. The heater control unit controls the temperature of the heater and the movement of the crystal holder. To the wafer 6 4 ′ 俾 to increase the heating efficiency acting on the wafer 64 to form the thermal reflector 62 and use it as another electrode for radio frequency (RF) electricity to form an electric field in the chamber 52. A cross-sectional view of a cold wall chemical vapor deposition apparatus according to the present invention is shown in FIG. As shown in the figure, the cold wall chemical vapor deposition apparatus 50 includes a chamber 5 2, exhaust units 58 and 60, and a gas supply unit 54. The chamber 52 is electrically grounded. 1 The exhaust units 58 and 60 are used to exhaust the air in the chamber 52. The gas supply unit 54 is used to supply a source gas material into the chamber 52. The exhaust unit is composed of a first exhaust unit 60 and a second exhaust unit 58. The first exhaust unit 30 is used for the entire area inside the chamber 52 and the second exhaust unit 58 is mainly used around the seat 66. Exhaust units 58 and 60 include an ultra-high vacuum (UHV) exhaust system using a turbo molecular pump. Therefore, the interior of chamber 52 also includes an ultra-high vacuum exhaust system, especially in the wafer holder for thin film deposition. The area around 66 will become ultra-high vacuum. The wafer holder is positioned in the chamber 52 = sub-supported by the supporter 68. The wafer 64 on which the thin film is deposited is placed on the wafer holder 66, and the wafer holder 6 is formed of the silicon material constituting the wafer. By way of example, materials such as graphite or silicon carbide (SiC) will not damage the wafer 64. The base 66 has a heater for heating the wafer 64 on the base 66 "and the second chamber 52 is formed. The internal electrode 6g is one of the electrodes of the electric field. The pedestal = moves up and down and is driven by a motor 7 () connected to the holder 68. The thermal reflector 62 is positioned on the upper part of the wafer seat "in the chamber 52. The gate radiates from the wafer 64 and the wafer seat 66 by reflection. A metal material is applied thereto, such as quartz or silicon oxide.

第14頁 538462 五、發明說明（9) 薄==在或形成為熱反射器62上之窗孔63， 氣相沈浐二備積在熱反射器62上。本發明之冷壁化學 的溫声加熱器控制單元65 ’其控制加熱器67 動。：加ίί”的溫度之後，控制晶座66的上下移 、 …态控制單元6 5配置在腔室5 2巾 ^ ^ ^ Xju 將其配置在腔室52的外部。…52中’但杈佳地，係 66的學氣相沈積設備的電性構造。將晶座 8。所控制射器’即外部電極，連接至由開關 頻‘）電芦)電源82 °開關80係選擇性地施加射 並同日士一’即内部電極69或熱反射器62， t吏剩下的電極接地。即，若施加射 極6 9，則佳教+β 0从丨L 、电ι η I ^ 哭R9曰丨土…、射w 62接地，且若施加射頻電壓至熱反射 :盥拉ί内部電極69接地。射頻（RF)電壓的選擇性作 用與接地係由開關80所控制。 fU总Γ I ί見圖4 ’俾說明本發明之薄膜沈積處理。晶圓 =、、裘由槽閥56而從外部傳人腔室52之中，並接著將其載 ^曰曰座66之上。藉由第一排氣單元60舆第二排氣單元58而 1腔^52的内部狀態繼而變成108陶爾（T〇rr)的超高真 態。因為晶座66在晶圓載入晶座66之上前已經藉由加 …态61而=熱’故將晶圓6 4加熱至通常為7 0 0 °C的某一溫 度，亚接著經由氣體供應單元54而將源氣體供應至腔室52 中。因為腔至5 2的内部處於超高真空狀態，故藉由源氣體 在腔室5 2中的散射而到達晶圓6 4。此時，因為晶圓6 4已如 上所述地被晶座66中的加熱器67所加熱，故當源氣體到達Page 14 538462 V. Description of the invention (9) Thin == window hole 63 in or formed on the heat reflector 62, and the gas phase sinker 2 is deposited on the heat reflector 62. The cold wall chemistry thermoacoustic heater control unit 65 'of the present invention controls the operation of the heater 67. : After the temperature is increased, the up and down movement of the crystal holder 66 is controlled, and the state control unit 65 is arranged in the chamber 5 2 ^ ^ ^ Xju is arranged outside the chamber 52.… 52 of the 'danjia Ground, the electrical structure of the vapor deposition equipment of Department 66. The crystal base 8. The controlled emitter 'that is, the external electrode is connected to the switching frequency') the electric lu) power source 82 ° switch 80 is used to selectively apply radiation It is also the same as that of the internal electrode 69 or the thermal reflector 62, and the remaining electrodes are grounded. That is, if the emitter electrode 6 9 is applied, Jiajiao + β 0 from 丨 L, electric η I ^ cry R9丨 Earth, ground 62, and if radio frequency voltage is applied to heat reflection: the internal electrode 69 is grounded. The selective action and grounding of radio frequency (RF) voltage is controlled by the switch 80. fU 总 Γ I see FIG. 4 ′ illustrates the thin film deposition process of the present invention. The wafer is transferred into the chamber 52 from the outside by the groove valve 56 and then loaded on the seat 66. With the first row The internal state of the air unit 60 and the second exhaust unit 58 and the 1 cavity ^ 52 then becomes an ultra-high true state of 108 Tour. Because the seat 66 is on the wafer The wafer 66 has been heated to a certain temperature, usually 700 ° C, by adding the state 61 before it is placed on the crystal holder 66, and then the source gas is supplied through the gas supply unit 54. Into the chamber 52. Because the interior of the chamber to 52 is in an ultra-high vacuum state, the source gas is scattered in the chamber 52 to reach the wafer 64. At this time, because the wafer 64 has already been as described above It is heated by the heater 67 in the pedestal 66, so when the source gas reaches

第15頁 538462 五、發明說明（10) 曰曰 上 圓64的表面時，其分解成各成分並接著沈積在晶圓64 。舉例而言，經常使用氧化矽（S i 02 )膜或氮化石夕 (SiM )膜等絕緣膜而使線圖案形成在晶圓64的表面上。 晶圓6 4的表面包括使矽等構成晶圓6 4之材料暴露在空氣中 的表面區域，並包括使氧化矽（s i % )膜或氮化矽（s乙n )膜等絕緣膜暴露在空氣中的表面區域。因為在矽表面3 i 的反應速率遠大於在氧化矽（Si〇2)膜表面或氮化矽 (SisN4)膜表面上的反應速率，故將選擇性地使 在晶圓64的矽表面上。 系積 冷壁化學氣相沈積設備5〇包括藉由馬達7〇而上下 的可動晶座66、及控制馬㈣之操作的加熱器控制單元動 曰= 器控制單元65而感測到曰曰曰圓64之上表面盘 二= 之間存在大的溫度差時，加熱器控制單； /二馬達7〇而使晶座66朝向熱反射器62上移，並" 面之間的溫度：。曰曰圓64之上表面與晶圓64之下表 另 方面’若晶圓64的黑序織λ、一士 單元65即加以感測並接著控制^心’則加熱器控制 熱器控制單元65亦同時押制:^而使晶座66下移。加 持在適當的溫度。即，J 7 1567的溫度，俾使晶圓維 溫度控制而控制晶圓64的二曰f/的移動與加熱器67的 執行晶圓溫度控制的習知冷ί化於僅藉由加熱器而 發明之晶圓的溫度控制將古:風相沈積设備而言，本 62之上具有窗孔63且使用石芷=。此外，因為熱反射器 、或氣化矽（S i 〇2 )塗佈或形 第16頁 538462 五、發明說明（11) 成窗孔63，故可大幅地減少熱反射器62上之不宜的薄膜沈 積現象。 薄膜沈積處理之後係進行腔室5 2的潔淨處理。本發明 之冷壁化學氣相沈積設備在腔室的潔淨處理上亦極優越。 的潔淨處理。習知冷壁化學 加射頻（RF )電壓至熱反射 將如六氟化硫（SF6 )電漿 而進行腔室的潔淨處理。本 化硫（SF6 )電漿氣體之潔 發明之晶座6 6可上下移動， 熱反射器6 2與晶座6 6之間的 淨氣體的密度與分佈。因 的習知冷壁化學氣相沈積設 行腔室52的潔淨。 沈積設備5 0包括用以形成腔 熱反射^§62而另·一為内部電 積設備50更包括開關8〇。開 )電壓至兩電極之一且同時 射頻電壓至内部電極69，則 射頻電壓至熱反射器6 2，則 )電壓的選擇性作用與接地 。因此，若在腔室5 2的潔淨 時，將使電漿氣體的移動方 進行電極的開關操作時，則Page 15 538462 V. Description of the invention (10) When the surface of the circle 64 is decomposed into various components and then deposited on the wafer 64. For example, an insulating film such as a silicon oxide (Si02) film or a nitride nitride (SiM) film is often used to form a line pattern on the surface of the wafer 64. The surface of the wafer 64 includes a surface area where silicon and other materials constituting the wafer 64 are exposed to the air, and includes an insulating film such as a silicon oxide (si%) film or a silicon nitride (s) film. Surface area in the air. Because the reaction rate of 3 i on the silicon surface is much higher than the reaction rate on the surface of the silicon oxide (SiO2) film or the surface of the silicon nitride (SisN4) film, it will be selectively applied to the silicon surface of the wafer 64. The integrated cold wall chemical vapor deposition equipment 50 includes a movable crystal holder 66 which is moved up and down by a motor 70, and a heater control unit 65 which controls the operation of the stable. Above the circle 64 on the surface of the second plate = when there is a large temperature difference, the heater control unit; / two motors 70 to move the seat 66 toward the heat reflector 62, and "the temperature between the surfaces:". On the other hand, the top surface of circle 64 and the bottom surface of wafer 64 are different. 'If the black sequence of lambda 64 of wafer 64 is sensed and then the control unit 65 is controlled, the heater controls the heater control unit 65. At the same time, he held down: ^ and moved the seat 66 down. Keep at proper temperature. That is, the temperature of J 7 1567 enables the wafer temperature control to control the movement of wafer f / 64 and the heater 67 to perform wafer temperature control. The conventional method is to reduce the temperature of the wafer 64 only by the heater. The temperature control of the invented wafer will be ancient: for wind deposition equipment, there is a window hole 63 on the top of the 62 and the use of stone slabs =. In addition, because the thermal reflector, or vaporized silicon (S i 〇2) is coated or shaped, page 16, 538462, 5. Description of the invention (11) into the window hole 63, it can greatly reduce the unfavorable on the thermal reflector 62 Thin film deposition. After the thin film deposition process, the cleaning process of the chamber 52 is performed. The cold wall chemical vapor deposition equipment of the present invention is also superior in the clean processing of the chamber. Clean treatment. Conventional cold-wall chemistry Applying radio frequency (RF) voltage to heat reflection will clean the chamber such as sulfur hexafluoride (SF6) plasma. The sulphur (SF6) plasma gas is cleaned. The crystal base 6 6 can be moved up and down, and the density and distribution of the net gas between the thermal reflector 62 and the crystal base 6 6. Because of the conventional cold wall chemical vapor deposition, the chamber 52 is cleaned. The deposition device 50 includes a cavity to form a heat reflection ^ § 62 and the internal device 50 includes a switch 80. On) the voltage is applied to one of the two electrodes and at the same time the RF voltage is applied to the internal electrode 69, then the RF voltage is applied to the thermal reflector 62, and then) the selective action of the voltage is connected to ground. Therefore, if the chamber 52 is clean and the electrode gas is turned on and off by moving the plasma gas, then

以下說明依據本發明之腔室5 2 氣相沈積設備中，通常藉由施 器而在腔室中形成電場並接著 氣體之潔淨氣體供應到腔室中 發明之潔淨處理亦使用如六氟 淨氣體而進行。然而，因為本 故可藉由晶座6 6的移動而控制 六氟化硫（SF6 )電漿氣體等潔 此，相較於具有固定之晶座6 6 備而言，本發明將更有效地進 如前所述，冷壁化學氣相 室中之電場的兩電極，其一為 極69。此外，冷壁化學氣相沈 關8 0係選擇性地施加射頻（^ f 使另一電極接地。即，若施加 使熱反射^§ 6 2接地，且若施加 使内部電極6 9接地。射頻（r f 係以此方式而由開關8 〇所控制 處理期間進行電極的開關择 向改變成相反方向。若」=In the following description of the chamber 5 2 vapor deposition apparatus according to the present invention, an electric field is usually formed in the chamber by an applicator, and then a clean gas of gas is supplied to the chamber. The clean process of the invention also uses a hexafluoronet And proceed. However, because of the fact that the sulphur hexafluoride (SF6) plasma gas can be controlled by the movement of the crystal base 6 6, compared with a fixed crystal base 6 6, the present invention will be more effective As described above, one of the two electrodes of the electric field in the cold wall chemical vapor phase chamber is the pole 69. In addition, the cold wall chemical vapor deposition process 80 is selectively applied with RF (^ f to ground the other electrode. That is, if applied to ground the heat reflection ^ § 62 2 and if applied to ground the internal electrode 69. RF (Rf changes the switching direction of the electrode during the process controlled by the switch 80 in this way to the opposite direction. If "=

第17頁 538462 五、發明說明（12) 以上戶斤述者 ， 例，而並非將本發 發明所做的任何雙 具有相反移動方向的電漿氣體將一再地在腔室中生成，因 此腔室5 2的潔淨將可較使用在單一方向上移動的電漿氣體 之習知潔淨方法更為有效地進行。 = :說明本發明之較佳實施 更’皆屬太於；該較佳實施例。凡依本 中4專利之範圍。Page 17 538462 V. Description of the invention (12) For example, instead of any plasma gas with opposite moving directions made by the present invention will be repeatedly generated in the chamber, so the chamber The cleaning of 5 2 can be performed more effectively than the conventional cleaning method using plasma gas moving in a single direction. =: Explain that the preferred implementation of the present invention is too much; this preferred embodiment. Where according to the scope of the 4 patents in this.

538462 圖式簡單說明 圖1為習知熱壁化學氣相沈積設備的概略平面圖。 圖2為顯示習知冷壁化學氣相沈積設備的橫剖面圖。 圖3為顯示習知冷壁化學氣相沈積設備中之晶圓與冷 壁之間的溫度差圖形。 圖4為顯示依據本發明之冷壁化學氣相沈積設備的橫 剖面圖。 【符號說明】538462 Brief description of drawings Figure 1 is a schematic plan view of a conventional hot wall chemical vapor deposition equipment. FIG. 2 is a cross-sectional view showing a conventional cold wall chemical vapor deposition apparatus. FIG. 3 is a graph showing a temperature difference between a wafer and a cold wall in a conventional cold wall chemical vapor deposition apparatus. Fig. 4 is a cross-sectional view showing a cold wall chemical vapor deposition apparatus according to the present invention. 【Symbol Description】

2 熱壁化學氣相沈積設備 2 0、5 0 冷壁化學氣相沈積設備 22 、 52 腔室 24、54 氣體供應單元 26 、 56 槽閥 28、30、58、60 排氣單元 32 > 62 熱反射器 3 3 射頻（R F )電極 34 、 64 晶圓 35、 82 射頻（RF )電源2 Hot wall chemical vapor deposition equipment 2 0, 50 0 Cold wall chemical vapor deposition equipment 22, 52 Chamber 24, 54 Gas supply unit 26, 56 Slot valve 28, 30, 58, 60 Exhaust unit 32 > 62 Thermal reflector 3 3 Radio frequency (RF) electrode 34, 64 Wafer 35, 82 Radio frequency (RF) power

36、 66 晶座 3 7、6 7 加熱器 38、69 内部電極 4 腔室 6 電阻加熱器 6 3 窗孔36, 66 Crystal holder 3 7, 6 7 Heater 38, 69 Internal electrode 4 Chamber 6 Resistance heater 6 3 Window hole

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Claims (1)

538462 六、申請專利範圍 1 · 一種冷壁化學氣相沈積設備，包含： 腔室 晶座 藉由一驅動裝置而可在該腔室内上下 該晶座包括一加熱器與一内部電極； 一熱反射器’位在該晶座之上方，該熱反射器 放射的一熱反射回該晶座上之一晶圓並 電極的一相對電極； 器控制單元，連接至該晶圓、該加熱器 該加熱器控制單元係感測該晶圓的一溫 該晶座則依據該溫度而移動； 供應單元，係供應氣體至 ，係施加一電壓至該腔室。 該加熱器所 接至該内部 一加熱 驅動裝置， 一氣體 一電源 及 移動， 係將從 當作連 、及該 度’而 2 ·如申請專利範圍第1項之冷壁仆 該熱反射器更包括塗佈有或形成予軋相沈積设備，其中 料的位在該熱反射器《下的-=如氧化石夕（Si〇2)之材 3·如申請專利範圍第1項之冷壁作 該驅動裝置為一馬達。 +氣相沈積設備，其中 4·如申請專利範圍第1項之冷壁仆 含一開關，係選擇性地施加該電/氣相沈積設備，更包 反射|5。 聖至該内部電極或至該熱538462 6. Scope of patent application1. A cold wall chemical vapor deposition device, comprising: a chamber crystal holder can be moved up and down in the chamber by a driving device; the crystal holder includes a heater and an internal electrode; a heat reflection A heater is located above the wafer base, and a heat radiated by the thermal reflector is reflected back to a wafer and an opposite electrode of the electrode; a controller control unit is connected to the wafer, the heater is used for heating The controller control unit senses a temperature of the wafer and the wafer base moves according to the temperature; the supply unit supplies gas to and applies a voltage to the chamber. The heater is connected to the interior of a heating drive device, a gas, a power source and a mobile, which will be regarded as the connection, and the degree '2. If the cold wall of the first scope of the patent application applies to the heat reflector more Including the pre-rolled phase deposition equipment coated or formed, where the material is located under the thermal reflector-= such as the material of the oxidized stone (Si〇2) 3. such as the cold wall of the first scope of the patent application The driving device is a motor. + Vapor deposition equipment, of which 4. If the cold wall of item 1 of the patent application contains a switch, the electric / vapor deposition equipment is selectively applied, including reflection | 5. To the internal electrode or to the heat 538462538462 六、申請專利範圍 5 ·如申請專利範圍第1項之冷壁化學氣相沈積設備，更包 含一排氣單元，係維持該腔室的一真空狀態。 6. —種冷壁化學氣相沈積設備之一腔室的潔淨方法，該冷 壁化學氣相沈積没備則包括具有一内部電極的 >一晶座、一 熱反射、該晶座所用之一驅動裝置、選擇性地施加一電 壓至該熱反射器或該内部電極的一電源、及一氣體供應單 元，包含以下步驟： 從該氣體供應單元供應潔淨氣體至該腔室； 施加該電壓至該熱反射器並同時使該内部電極接地； 施加該電壓至該内部電極並同時使該熱反射器接地； 及 藉由該驅動裝置上下地移動該晶座，同時將該電壓施 加至該熱反射器或該内部電極。 7. 如申請專利範圍第6項之冷壁化學氣相沈積設備之一腔 室的潔淨方法，其中該驅動裝置為一馬達。 8 .如申請專利範圍第6項之冷壁化學氣相沈積設備之一腔 室的潔淨方法’其中該冷壁化學氣相沈積設備更包括一開 關，其選擇性地施加該電壓至該熱反射器或該内部電極。6. Scope of patent application 5 · The cold wall chemical vapor deposition equipment according to item 1 of the patent application scope further includes an exhaust unit to maintain a vacuum state of the chamber. 6. —A method for cleaning a chamber of a cold wall chemical vapor deposition device, the cold wall chemical vapor deposition device includes an internal electrode > a crystal base, a thermal reflection, and A driving device, a power source selectively applying a voltage to the thermal reflector or the internal electrode, and a gas supply unit include the following steps: supplying clean gas from the gas supply unit to the chamber; applying the voltage to The thermal reflector simultaneously grounds the internal electrode; applying the voltage to the internal electrode and grounding the thermal reflector at the same time; and moving the crystal holder up and down by the driving device while applying the voltage to the thermal reflection Device or the internal electrode. 7. The method for cleaning a chamber of a cold wall chemical vapor deposition equipment according to item 6 of the patent application, wherein the driving device is a motor. 8. The method for cleaning a chamber of one of the cold wall chemical vapor deposition equipment according to item 6 of the patent application, wherein the cold wall chemical vapor deposition equipment further includes a switch that selectively applies the voltage to the thermal reflection Device or the internal electrode. 第22頁Page 22