535301 五、發明説明（1 ) 【發明所屬技術領域】 本發明係相關半導體發光元件，更詳細而言，係指相關 提昇發光元件之發光指向性的半導體發光元件。 【習知技術】 採用半導體之發光元件係有如眾所週知的發光二極體 (以下略稱「LED」）、或雷射二極體等。譬如採用瓜-V族化 合物半導體的LED，係在GaP或GaAs等單結晶基板上， 磊晶沉積上 GaP、GaAsP、GaAs、GaAlAs、GaAlInP、535301 V. Description of the Invention (1) [Technical Field of the Invention] The present invention relates to a semiconductor light emitting device, and more specifically, it refers to a semiconductor light emitting device that improves the light emitting directivity of a light emitting device. [Knowledge technology] Light-emitting elements using semiconductors are well-known light-emitting diodes (hereinafter referred to as "LEDs"), or laser diodes. For example, LEDs using melon-V compound semiconductors are on single crystal substrates such as GaP or GaAs, and epitaxially deposited on GaP, GaAsP, GaAs, GaAlAs, GaAlInP,
GaN等層後而獲得。此構造係由p層、n層各一層以上的 薄膜形式pn接合，並在該pn接合部植入電子之際，顯現 出發光現象的最佳構造。 在LED中，將來自pn接合部所發光的光全方位釋放出 。相對於此，雷射二極體係使用於強發光指向性、且將光 朝一定方向收束之情況。但是，因爲雷射二極體一般上屬 高單價者，且在驅動時使用較大電力等問題，所以便有嚐 試使LED發光的光亦具有指向性。譬如，有提案如改變 部分LED構造，而提昇發光的指向性，即所謂的電流狹 窄型LED。惟，電流狹窄層的LED將產生如磊晶沉積的 結晶沉積控制較爲困難，或因部分結晶流通大電流而造成 信賴性降低等問題點。此外’雖相較於雷射二極體下屬較 廉價者，但相較於習知LED下則便產生構造複雜且高價 的問題。 另，爲提昇LED的發光指向性，有嚐試在發光部的框 體上，設置、形成反射板或反射杯等方式。惟，此情況時’ 經濟部智慧財產局員工消費合作社印製 535301 A7 ____B7___ 五、發明說明（2 ) 隨反射板或反射杯的設置、形成將造成發光裝置的高價， 同時較難小型化的問題點發生。此外，因爲具有無法將發 光區域縮小至如雷射二極體、或電流狹窄型LED般的問 題，所以在使用於點光源上便較爲困難。 其他，雖有在元件上面的電極上，設置光取出用窗，而 嚐試作爲點光源使用，但因爲由元件側面所洩漏出的光將 形成迷失光，而增加雜音成分，造成SN比惡化，且亦僅 能獲得與習知LED同等的發光指向性而已。 【發明欲解決之課題】 有鑑於斯，本發明爲解決該等問題點，其目的在於提供 一種發光指向性較高，且高輸出的小型LED及該LED製 造方法，同時亦提供藉由使用此LED而組合高性能光學 式偵測器、光通訊裝置、及該等元件之電子裝置。 【解決課題之手段】 本發明爲解決上述課題，經深入鑽硏探討結果，發現藉 由在LED周圍以低導電性之具阻光性物質被覆，便可形 成發光指向性較高的LED，遂完成本發明。即， [1] 在具pn接合部的半導體發光元件中，將部分元件， 以具阻光性物質（以下稱「阻光性物質」）被覆爲其特徵的 半導體發光元件； [2] 乃如[1]所述之半導體發光元件，其中該阻光性物質 係包含由金屬或顏料中至少選擇一種以上者。 [3] 乃如[2]所述之半導體發光元件，其中該金屬係由A1 、Cu、Ag、Au、Pt、Ti、Ni、Sn、Pb、Mg、Zn、Fe、Co、 -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --裝 11 n ϋ ι_·ρ 一OJ 1 mm—m n n 1 n ϋ I » 535301 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（'）GaN and other layers. This structure is an optimal structure that exhibits a light-emitting phenomenon when a pn junction is formed in a thin film form, each of which is a p-layer or an n-layer, and electrons are implanted at the pn junction. In the LED, the light emitted from the pn junction is released in all directions. On the other hand, the laser diode system is used in the case of strong light directivity and the beam is focused in a certain direction. However, because laser diodes are generally high unit price and use large power when driving, etc., it is possible to try to make LEDs emit light with directivity. For example, there are proposals such as changing the structure of some LEDs to improve the directivity of light emission, so-called current-narrow LEDs. However, LEDs with a narrow current layer will have problems such as epitaxial deposition, which is difficult to control crystalline deposition, or some crystals will suffer from high reliability due to large currents. In addition, although it is cheaper than that of a laser diode, it has a problem of complicated structure and high price compared with a conventional LED. In addition, in order to improve the directivity of light emission of LEDs, attempts have been made to install and form a reflection plate or a reflection cup on the frame of the light-emitting portion. However, in this case, printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 535301 A7 ____B7___ V. Description of the invention (2) The installation and formation of the reflector or the reflector will cause the high price of the light-emitting device, and it is difficult to miniaturize The point happens. In addition, there is a problem that the light emitting area cannot be reduced to a size such as a laser diode or a narrow-current LED. Therefore, it is difficult to use it in a point light source. In addition, although the light extraction window is provided on the electrode on the element, and it is tried to be used as a point light source, the light leaked from the side of the element will cause stray light and increase the noise component, which will cause the SN ratio to deteriorate, and Only the same directivity as the conventional LED can be obtained. [Problems to be Solved by the Invention] In view of this, in order to solve these problems, the present invention aims to provide a small LED with high light directivity and high output and the LED manufacturing method. LEDs and electronic devices that combine high-performance optical detectors, optical communication devices, and these components. [Means for solving the problem] In order to solve the above-mentioned problems, the present invention, after in-depth drilling research results, found that by covering the LED with a light-blocking substance with low conductivity, an LED with high light directivity can be formed. The present invention has been completed. That is, [1] Among the semiconductor light-emitting elements having a pn junction, a part of the elements is covered with a light-blocking substance (hereinafter referred to as "light-blocking substance"); [2] [1] The semiconductor light-emitting device, wherein the light-blocking substance includes at least one selected from a metal and a pigment. [3] The semiconductor light-emitting device according to [2], wherein the metal is composed of A1, Cu, Ag, Au, Pt, Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page)-Pack 11 n ϋ ι_ · ρ-OJ 1 mm—mnn 1 n ϋ I »535301 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (')
Cr中至少選擇一種者。 [4] 乃如[2]或[3]所述之半導體發光元件，其中該顏料係 由體質顏料、白色顏料、黑色顏料、黃色顏料、褐色顏料 、紅色顏料、紫色顏料、藍色顏料、綠色顏料、螢光顏料 、金屬粉末顏料或有機、無機顏料中至少選擇一種者。 [5] 乃如[1]〜[4]中任一項所述半導體發光元件，其中該 所被覆阻光性物質的電阻，係在1 〇6 Q m以上。 [6] 乃如[2]〜[5]中任一項所述半導體發光元件，其中該 阻；性物質係包含粉體’在該粉體表面上形成電絕緣層。 [7] 乃如[2]〜[6]中任一項所述半導體發光元件，其中該 阻光性物質係包含粉體，在該粉體表面上被覆樹脂，而所 被覆樹脂的厚度在0 · 0 1〜3 Ο μ m範圍內。 [8] 乃如[2]〜[7]中任一項所述半導體發光元件，其中該 粉體粒徑係在〇.〇1〜100// m範圍內。 [9] 乃如[2]〜[8]中任一項所述半導體發光元件，其中該 粉體係厚度在〇.〇〇l//m〜ΙΟ/zm範圍內，且長度在 Ο.ΟΙμηι〜100 // m範圍內的板狀。 [10] 乃如[1]〜[9]中任一項所述半導體發光元件，其中 該阻光性物質係包含50質量％以上之全反射率50%以上的 物質。 [11] 乃如[1]〜[1〇]中任一項所述半導體發光元件，其中 該半導體發光元件之發光的光波長在350〜1800nm範圍內。 [12] 乃如Π]〜[Π]中任一項所述半導體發光元件，其中 該該被覆阻光性物質，相對於半導體發光元件之發光的穿 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -丨·---，------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 535301 五、發明説明（4 ) 透率係在50%以下。 [13] 乃如[1]〜[I2]中任一項所述半導體發光元件，其中 在以阻光性物質被覆之元件部分的表面上係具有凹凸。 [14] 乃如[13]所述半導體發光元件，其中該凹凸的深度 係在0.1〜5 0 // m範圍內。 [15] 乃如[1]〜[14]中任一項所述半導體發光元件之製造 方法，係在供製作半導體發光元件之磊晶晶圓上，於被覆 阻光性物質部分，形成溝槽後，於該溝槽處被覆阻光性物 質，然後切斷磊晶晶圓而形成個別的半導體發光元件。 [16] 乃如[15]所述半導體發光元件之製造方法，形成光 取出部的溝槽寬度，係在5〜500 // m範圍內。 [1 7 ]乃如[1 ]〜[1 4 ]中任一項所述半導體發光元件之製造 方法，係將半導體發光元件排列於在具黏接性薄板上所開 設的間隔後，在該半導體發光元件之間隔部分形成阻光性 物質，而將阻光性物質被覆於半導體發光元件上。 [18]乃如[17]所述半導體發光元件之製造方法，排列該 半導體發光元件之間隔的間隔係在5〜3000 // m範圍內。 [1 9 ]乃如[1 ]〜[1 4 ]中任一項所述半導體發光元件之製造 方法，係包含有在將半導體發光元件的光取出部份進行罩 幕程序後，尙有將半導體發光元件以阻光性物質被覆的程 序，及去除罩覆物質的程序。 [20]係利用[15]〜[19]中任一項所述製造方法，所製得之 半導體發光元件。 [2 1 ]係利用[1 ]〜[1 4]或[20]項中任一項所述半導體發光 535301 五 '發明説明（5 ) 兀件而製得之樹脂封裝型發光元件。 [22] 乃如[21]所述樹脂封裝型發光元件，其中使用於封 裝的樹脂’係指對半導體發光元件所放射出的光呈透明者 ’乃由如環氧樹脂、尿素樹脂、矽樹脂中，選擇任何一種 者。 [23] 乃採用如[1]〜[14]或[20]中任一項所述半導體發光 元件、或[21]、[22]所述樹脂封裝型發光元件，而製得之 光學偵測器。 [24] 乃採用如[1]〜[14]或[20]中任一項所述半導體發光 元件’或[21]、[22]所述樹脂封裝型發光元件，而製得之 光通訊裝置或顯示裝置。 [25] 乃搭載如[23]所述光學偵測器的電子裝置。 [26] 乃搭載如[24]所述光通訊裝置或顯示裝置的電子裝 置。 【發明實施態樣】 本發明之半導體發光元件，具有在單結晶基板上，磊晶 沉積P型半導體層與η型半導體，而形成pn接合之構造 。具體而言，係如由 GaP、GaAsP、GaAs、GaAlAs、 GaAlInP、GaN、AlInGaP等IE - V族元素所構成的半導體 發光元件、或由ZnSe、ZnS等ΙΠ-V族元素所構成的半導 體發光元件。此外，在結構上，可採用均接合型、單異質 (以下稱「SH」）結構、雙異質（以下稱「DH」）結構、採用 透明基板的雙異質（以下稱「TS-DH」）結構、單一量子井 結構、多級量子井結構等各種型態的結構。該等結構之半 -7- 五、發明説明（6 ) 導體發光元件的磊晶層沉積方法，雖一般係採用液相磊晶 沉積法，但利用鹵系氣相磊晶沉積法、或有機金屬之所謂 的MOCVD法或MBE法，所製得的半導體發光元件，亦 同樣的可使用本發明中。 本發明之半導體發光元件，係將除光取出部位以外的部 分，利用阻光性物質進行被覆。所謂阻光性物質係指具有 未將發光元件之發光射出於外功能的物質，亦可在阻光性 物質內具吸收發光之功能，另亦可將發光反射而不放射於 外界者。當阻光性物質屬由具反射發光功能之物質所構成 構造的情況時，最好元件的反射光最後由光取出部位釋放 出於元件外界，藉此便可提高指向性，且更進一步增強發 光強度。所謂光取出部位係指除半導體發光元件上表面之 外，其他的側面、底面處、取出指向性較高的光，此部份 形狀（發光面形狀）、及大小（發光面大小），並無特別的限 制，可配合用途、目的、封裝形狀等，設計最佳的光取出 狀態。此情況下，並毋須將除光取出部位以外之部分的整 面被覆阻光性物質，譬如發光位穿透的電極，元件上面對 應於發光未穿透之電極的位置處，利用以阻光性物質被覆 元件側面，便可在元件上面，由電極以外的部分獲得指向 性較高的放射光。電極形狀可爲如圓形、橢圓形、正方形 、長方形、多角形等形狀。而在與縮小發光面尺寸時，便 可在電極上形成開口，由開口形成將光取出的構造。開口 形狀可如圓形、橢圓形、正方形、長方形、多角形等形狀 ，而大小則可適當的選擇。另，亦可配置複數電極，而決 535301 五、發明説明（7 ) 定發光面形狀及發光面尺寸。 本發明之阻光性物質係由導電性低的物質所構成。在降 低阻光性物質的導電性上，有如在不致影響半導體發光元 件的電特性情況下，可將阻光性物質直接形成半導體發光 元件表面上。此外，在由導電性較低物質所覆蓋的部位處 ，因爲將減少表面洩漏電流，所以便可形成信賴性較高的 發光元件。所使用阻光性物質的電阻最好在1 〇6 Ω m以上 ，尤以在108Ω m以上爲佳，最好爲絕緣體。 在本發明中，被覆半導體發光元件之物質，最好含有由 金屬或顏料中至少選擇其中一種之組成者。另，所被覆的 物質，亦可爲含金屬或顏料的粉體。當該等物質爲相對半 導體發光元件的發光，具有優越阻光性的粉體時，在被覆 半導體發光元件時，因爲分散性佳，所以並無塗斑出現， 且在溶於溶劑後再進行塗布時，與黏接劑間的親合力亦較 高。 其中’金屬尤以含由Al、Cu、Ag、Au、Pt ' Ti、Ni、Sn 、Pb、Mg、Zn、Fe、Co、Cr中至少選擇一種者爲佳，該等 金屬合金最好爲Ni-Cu、Co-Ni、Au-Ag。另，除該等金屬 合金之外，尙可適當的採用非金屬或半金族元素。當該等 金屬爲粉末時，可利用同種類或不同種類的氧化物被覆於 表面’或利用樹脂等塗敷，便可使表面形成電絕緣層，而 可適當的降低阻光性物質的導電性。 顏料可爲由體質顏料、白色顏料、黑色顏料、黃色顏料 、褐色顏料、紅色顏料、紫色顏料、藍色顏料、綠色顏料 535301 五、發明説明（8 ) 、螢光顏料、金屬粉末顏料或有機、無機顏料中，單獨選 擇一種或混合二種以上者。 所謂體質顏料，有如矽土、鋁土、滑石、重晶石粉、碳 酸鈀等。所謂白色顏料，有如鋅白、氧化鈦、硫化鋅、氧 化銻等。所謂黑色顏料，有如碳黑、乙炔黑、苯胺黑等。 所謂黃色顏料，有如鉛黃、鋅黃、鉻酸鈀等。所謂褐色顏 料，有如氧化鐵、赭色、永久褐、血褐等。所謂紅色顏料 ，有如血紅、鎘紅、永久紅4R、對位紅、火紅等。所謂 紫色顏料，有如鈷紫、錳紫、堅牢紫B、甲基紫等。所謂 藍色顏料，有如群青、米洛麗藍、鹼性藍、AS1菁藍等。 所謂綠色顏料，有如鉻綠、鉻綠（Viridian)、祖母綠、AS 1 菁綠等。所謂螢光顏料，有如硫化鋅、矽酸鋅、硫化鋅鎵 、硫化緦等。顏料係即便爲有機物或無機物均無妨，並不 僅限於上述所例示的顏料。其中，針對電阻較高者，並不 致對半導體發光元件的電性有影響，可直接塗布於半導體 發光元件表面上。而針對電阻較低者，利用在粉體表面上 塗布樹脂等，便可使表面上形成電絕緣層，而可供使用。 形成於粉體表面上的樹脂層厚度，最好在0.0 1〜3 0 // m範 圍內。 上述粉體中，若屬Al、Ti、Mg等較易氧化者的話，因 爲在大氣中表面將氧化，所以便可簡單的降低含此之阻光 性物質的電阻。此外，雖亦可採用鋁土、氧化鈦、矽土等 ’但一般其反射率將較金屬爲差。所以，便依較多塗布量 俾提昇反射率，或利用預先在表面上塗布較易將光反射的 其他物質等方法，藉此提高反射效果，俾供使用。 -10- 535301 五、發明説明（9 ) 粉體形狀可使用如板狀、球狀、不定形狀等各種形狀者 。金屬粉之粒徑，最好在0.01〜1 00 A m範圍內’尤以在 0.1〜80// m範圍內內者爲佳，更以在1〜50// m範圍內者 爲更佳。若粒徑低於〇.〇1 μ m的話，阻光性物質的阻光性 便將劣化，而無法獲得充分的特性。反之’若粒徑超過 1 00 // m的話，則對阻光性物質之半導體發光元件的密接 性便將降低。 粉體形狀特別以板狀者爲佳。經本發明深入硏究結果發 現，採用厚度在0.001 μ m〜10// m範圍內，尤以在1 V m 〜0.5 // m範圍內者爲佳，而長度則在0.01 μπι〜100// m範 圍內，尤以在1 A m〜5 0 // m範圍內的薄板狀粉體的話， 將特別具效果。板狀粉體因爲隨溶劑蒸發，並利用溶劑的 表面張力，而對塗布面形成平行排列的板狀面。所以，即 便膜厚較薄者，亦可形成被覆性高且反射率較高的鏡面狀 膜。當板狀粉體的厚度小於〇.〇1 // m時，於塗布之際，阻 光性物質將變形，而使各膜間相互重疊而無法形成平面， 造成光反射率的降低。 本發明中，將該等金屬、顏料等、或含該等粉體的阻光 性物質，被覆於半導體發光元件上的方法，除將阻光性物 質利用直接、化學蒸鍍、物理蒸鍍、塗布等方法之外，尙 有混合形成黏接劑的樹脂，將其利用水或有機溶劑等予以 分散後，再將其塗布於半導體發光元件表面上，然後乾燥 或硬化的方法。 所謂形成黏接劑的樹脂，係指對半導體發光元件之發光 -11- 535301 五 '發明説明（1G ) 的吸收較少，阻光性物質的分散性較高，可溶於水或有機 溶劑，經塗布並乾燥後而可形成塗層者，或經塗布後，經 乾燥，並由光、熱等硬化，而可形成塗層者，若屬此二者 的話便可，其餘並無特別的限制。譬如碳化氫系樹脂、丙 烯酸系樹脂、醋酸乙酯及乙二醇系樹脂、含鹵系樹脂、含 氮系樹脂、苯酚系樹脂、氨基樹脂、芳香族碳氫系樹脂、 聚酯型樹脂、聚醯胺型樹脂、矽樹脂、聚胺酯樹脂、環氧 樹脂、蛋白質系樹脂等。此外，塗布後產生交聯反應的硬 化型樹脂，有如UV硬化性樹脂、熱硬化性樹脂等。該等 樹脂可單獨使用、或混合2種以上使用。 另，使用於分散的溶劑，有如水、甲醇、乙醇、異丙醇 、正丙醇、正丁醇、甲乙酮、醋酸乙酯、醋酸丁酯、丙酮 、二甲基甲醛、甲基溶纖劑、乙二醇、丙二醇、氟系溶劑 、甲苯、二甲苯等。該等溶劑可單獨使用，或混合2種以 上使用。 .本發明之阻光性物質中所含的金屬粉末與顏料粉末，雖 可單獨使用或混合2種以上使用，而調配量則以乾燥重量 相對阻光性物質整體乾燥份，最好爲5〜99質量％，尤以 20〜95質量％爲佳，更以40〜95質量％爲更佳。若調配量 低於5質量％的話，則可能產生阻光性不足的情形。反之 ，若調配量超過99質量％的話，則對阻光性物質之發光元 件的密接性將劣化。 本發明阻光性物質之被覆材料，在配合需要上，亦可含 UV吸收劑、氧化防止劑、分散劑、螢光增白劑、滅泡劑 -12- 535301 五、發明説明（11 ) 、潤滑劑、防腐劑等各種添加劑。 所謂UV吸收劑，有如苯並***系、三AS2系、苯酮系 UV 吸收劑，譬如 TINUVIN234、TINUVIN320、 TINUVIN1 577、CHIMASSORB81(產品名，汽巴化學製品 (Chiba Speciality Chemical)(股）公司產製），理想添加量爲 0 · 0 1〜1 0質量％。所謂氧化防止劑，有如苯酚系、磷酸鹽 系、硫醚系等，譬如亞特卡斯塔布（7亍力7夕：7、、）、八0- 20、AO-30、PEP-4C、PEP-8、AO-23、AO-412S(產品名， 旭電化工業（股）公司產製），最好添加量爲0.01〜10質量％ 。所謂分散劑，有如地英爾（宁ΐ -Λ〇ΕΡ、波依如（求彳X ) 520、波依如（求彳Χ)521、波依如（求彳χ)530(產品名， 花王（股）公司產製）等，最好添加量爲0.01〜10質量％。所 謂螢光增白劑，有如UVITEX OB、UVITEX ΟΒ-Ρ(產品名 ，汽巴化學特製品（股）公司產製），最好添加量爲〇.〇1〜1〇 質量％。所謂滅泡劑，有如埃瑪爾原（工7 Αy ) 4 〇 4、埃 瑪索爾.（工7 乂 -少）0-15R(產品名，花王（股）公司產製）等 ，最好添加量爲〇·〇1〜1〇質量％。所謂潤滑劑，有如露納 克（少于V夕）S-3 0、S-40、脂肪酸醯胺S、埃氣塞爾（工夺 ir，）T-95(產品名，花王（股）公司產製）等，最好添加量爲 0 · 0 1〜1 0質量％。所謂防腐劑、有如拜歐典（八γ才宁^ ) -S、拜歐典（〆彳才X ^ )-421、阿莫爾典（歹干 > 宁^ )Alk (產品名，大和化學工業（股）公司產製）等，最好添加量爲 0·0 1〜1 0質量％。以上添加劑，並不僅限於上述例示者。 阻光性物質的厚度’若過薄的話，將無法獲得充分的發 -13- 535301 五、發明説明（12 )At least one of Cr is selected. [4] The semiconductor light-emitting device according to [2] or [3], wherein the pigment is composed of constitution pigment, white pigment, black pigment, yellow pigment, brown pigment, red pigment, purple pigment, blue pigment, green At least one of a pigment, a fluorescent pigment, a metal powder pigment, or an organic or inorganic pigment is selected. [5] The semiconductor light-emitting element according to any one of [1] to [4], wherein the resistance of the covered light-blocking substance is not less than 106 m. [6] The semiconductor light-emitting device according to any one of [2] to [5], wherein the resistive substance comprises a powder 'to form an electrical insulating layer on a surface of the powder. [7] The semiconductor light-emitting device according to any one of [2] to [6], wherein the light-blocking substance contains powder, and a resin is coated on the surface of the powder, and the thickness of the coated resin is 0 · In the range of 0 1 to 3 0 μm. [8] The semiconductor light-emitting device according to any one of [2] to [7], wherein the particle size of the powder is in the range of 0.01 to 100 // m. [9] The semiconductor light-emitting device according to any one of [2] to [8], wherein the thickness of the powder system is in the range of 0.0001 // m to 10 / zm, and the length is 0.001 μηι ~ 100 // plate in the range of m. [10] The semiconductor light-emitting device according to any one of [1] to [9], wherein the light-blocking substance is a substance having a total reflectance of 50% by mass or more. [11] The semiconductor light-emitting element according to any one of [1] to [10], wherein a light wavelength of light emitted by the semiconductor light-emitting element is in a range of 350 to 1800 nm. [12] The semiconductor light-emitting device according to any one of Π] to [Π], wherein the coated light-blocking substance is compliant with the national standard (CNS) A4 of the paper for the light emission of the semiconductor light-emitting device. Specifications (210 X 297 mm)-丨 · ---, ------ install -------- order --------- (Please read the precautions on the back before filling (This page) 535301 V. Description of the invention (4) The transmittance is below 50%. [13] The semiconductor light emitting element according to any one of [1] to [I2], wherein the surface of the element portion covered with a light blocking substance has unevenness. [14] The semiconductor light-emitting device according to [13], wherein the depth of the unevenness is in a range of 0.1 to 5 0 // m. [15] The method for manufacturing a semiconductor light-emitting device according to any one of [1] to [14], in which a trench is formed on an epitaxial wafer for manufacturing a semiconductor light-emitting device, and the light-blocking substance portion is covered. After that, the trench is covered with a light-blocking substance, and then the epitaxial wafer is cut to form individual semiconductor light-emitting elements. [16] It is the method for manufacturing a semiconductor light emitting device as described in [15], and the groove width of the light extraction portion is within a range of 5 to 500 // m. [1 7] The method for manufacturing a semiconductor light-emitting element according to any one of [1] to [1 4], in which the semiconductor light-emitting elements are arranged in a space opened on an adhesive sheet, A light-blocking substance is formed in the space between the light-emitting elements, and the light-blocking substance is coated on the semiconductor light-emitting element. [18] is the method for manufacturing a semiconductor light-emitting element as described in [17], and the interval at which the semiconductor light-emitting elements are arranged is in a range of 5 to 3000 // m. [1 9] The method for manufacturing a semiconductor light-emitting device according to any one of [1] to [1 4], which includes performing a masking procedure after taking out light from the semiconductor light-emitting device, and then removing the semiconductor light-emitting device. A procedure for covering the light-emitting element with a light-blocking substance, and a procedure for removing the covering substance. [20] A semiconductor light-emitting device obtained by using the manufacturing method according to any one of [15] to [19]. [2 1] is a resin-encapsulated light-emitting device manufactured by using the semiconductor light-emitting device described in any one of [1] to [1 4] or [20] 535301 five 'invention description (5). [22] The resin-encapsulated light-emitting element as described in [21], wherein the resin used for encapsulation "refers to those which are transparent to the light emitted from the semiconductor light-emitting element", such as epoxy resin, urea resin, and silicone resin. , Choose any one. [23] Optical detection using the semiconductor light-emitting element described in any one of [1] to [14] or [20] or the resin-encapsulated light-emitting element described in [21] or [22] Device. [24] An optical communication device prepared by using the semiconductor light-emitting element described in any one of [1] to [14] or [20], or the resin-encapsulated light-emitting element described in [21], [22] Or display device. [25] is an electronic device equipped with the optical detector as described in [23]. [26] is an electronic device equipped with an optical communication device or a display device as described in [24]. [Implementation Mode of the Invention] The semiconductor light emitting element of the present invention has a structure in which a P-type semiconductor layer and an n-type semiconductor are epitaxially deposited on a single crystal substrate to form a pn junction. Specifically, it is a semiconductor light-emitting element composed of IE-V group elements such as GaP, GaAsP, GaAs, GaAlAs, GaAlInP, GaN, AlInGaP, or a semiconductor light-emitting element composed of Π-V group elements such as ZnSe, ZnS, etc. . In addition, the structure can adopt a homojunction type, a single heterogeneous (hereinafter referred to as "SH") structure, a double heterogeneous (hereinafter referred to as "DH") structure, and a double heterogeneous (hereinafter referred to as "TS-DH") structure using a transparent substrate. , Single quantum well structure, multi-level quantum well structure and other types of structures. Half of these structures-7- 5. Description of the invention (6) Although the epitaxial layer deposition method for conductive light-emitting elements is generally a liquid phase epitaxial deposition method, a halogen-based vapor phase epitaxial deposition method or an organic metal is used. The so-called MOCVD method or MBE method can also be used in the semiconductor light-emitting device produced in the present invention. The semiconductor light-emitting element of the present invention is that a portion other than the light extraction portion is covered with a light-blocking substance. The light-blocking substance refers to a substance having a function of not emitting light from a light-emitting element to the outside, and may also have a function of absorbing and emitting light in the light-blocking substance, and may also reflect light without radiating to the outside. When the light-blocking substance is a structure composed of a substance having a reflective luminous function, it is best that the reflected light of the element is finally released from the outside of the element by the light extraction portion, thereby improving the directivity and further enhancing the light emission. strength. The so-called light extraction portion refers to the side surface, the bottom surface, and the other side of the semiconductor light-emitting element, and the light with a higher directivity is taken out. The shape (light-emitting surface shape) and size (light-emitting surface size) of this part are not With special restrictions, the optimal light extraction state can be designed according to the purpose, purpose, package shape, etc. In this case, it is not necessary to cover the entire surface of the part other than the light extraction area with a light-blocking substance, such as an electrode that emits light, and the position of the element corresponding to the electrode that does not penetrate the light is used to block the light. By covering the side of the element with the substance, the irradiated light with higher directivity can be obtained from the part above the element, except for the electrode. The shape of the electrode may be a shape such as a circle, an ellipse, a square, a rectangle, or a polygon. When reducing the size of the light-emitting surface, an opening can be formed in the electrode, and the structure can be used to extract light. The shape of the opening can be round, oval, square, rectangular, polygon, etc., and the size can be selected appropriately. In addition, a plurality of electrodes can also be arranged, and 535301 V. Description of the invention (7) The shape and size of the light emitting surface are determined. The light-blocking substance of the present invention is made of a substance having low conductivity. In reducing the conductivity of the light-blocking substance, the light-blocking substance can be directly formed on the surface of the semiconductor light-emitting element, as long as it does not affect the electrical characteristics of the semiconductor light-emitting element. In addition, in areas covered with a low-conductivity substance, the surface leakage current is reduced, so that a light-emitting element having high reliability can be formed. The resistance of the light-blocking substance used is preferably more than 106 Ω m, particularly preferably more than 108 Ω m, and most preferably an insulator. In the present invention, it is preferable that the material covering the semiconductor light emitting element contains at least one selected from a metal and a pigment. In addition, the coating material may be a powder containing a metal or a pigment. When these materials are powders that emit light relative to semiconductor light-emitting elements and have excellent light blocking properties, when they are coated with semiconductor light-emitting elements, they have good dispersibility, so there are no smears, and they are coated after being dissolved in a solvent. At the same time, the affinity with the adhesive is also high. Among them, 'metal especially contains at least one selected from Al, Cu, Ag, Au, Pt' Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, and Cr. The metal alloy is preferably Ni -Cu, Co-Ni, Au-Ag. In addition, in addition to these metal alloys, non-metal or semi-gold elements can be suitably used. When these metals are powders, they can be coated on the surface with the same or different types of oxides, or coated with resin, etc., so that the surface can form an electrical insulation layer, and the conductivity of the light-blocking substance can be appropriately reduced. . The pigment may be an extender pigment, a white pigment, a black pigment, a yellow pigment, a brown pigment, a red pigment, a purple pigment, a blue pigment, a green pigment 535301. V. Description of the Invention (8), a fluorescent pigment, a metal powder pigment, or an organic, Among the inorganic pigments, one kind is selected alone or two or more kinds are mixed. The so-called constitution pigments include silica, alumina, talc, barite powder, and palladium carbonate. The so-called white pigments include zinc white, titanium oxide, zinc sulfide, and antimony oxide. The so-called black pigments include carbon black, acetylene black, and aniline black. The so-called yellow pigments include lead yellow, zinc yellow, and palladium chromate. The so-called brown pigments include iron oxide, ochre, permanent brown, and blood brown. The so-called red pigments include blood red, cadmium red, permanent red 4R, para red, and fiery red. The so-called purple pigments include cobalt violet, manganese violet, fast violet B, methyl violet, and the like. The so-called blue pigments are ultramarine blue, milori blue, basic blue, and AS1 cyanine. The so-called green pigments include chrome green, viridian, emerald, and AS 1 cyan. The so-called fluorescent pigments include zinc sulfide, zinc silicate, zinc gallium sulfide, thallium sulfide, and the like. The pigment system is not limited to an organic substance or an inorganic substance, and is not limited to the pigments exemplified above. Among them, those with higher resistance do not affect the electrical properties of the semiconductor light emitting element, and can be directly coated on the surface of the semiconductor light emitting element. For those with lower resistance, by coating resin on the surface of the powder, an electrical insulating layer can be formed on the surface and it can be used. The thickness of the resin layer formed on the surface of the powder is preferably in the range of 0.0 1 to 3 0 // m. Among the above powders, if they are relatively easily oxidized such as Al, Ti, and Mg, since the surface will be oxidized in the atmosphere, the resistance of the light-blocking substance containing this can be simply reduced. In addition, although alumina, titanium oxide, silica, etc. can also be used, its reflectivity is generally inferior to that of metals. Therefore, it is necessary to increase the reflectance by applying a large amount of coating, or to apply other materials that are more likely to reflect light on the surface in advance, thereby improving the reflection effect and making it available for use. -10- 535301 V. Description of the invention (9) Various shapes such as plate shape, spherical shape, and indefinite shape can be used for the powder shape. The particle size of the metal powder is preferably in the range of 0.01 to 100 A m, particularly in the range of 0.1 to 80 // m, and more preferably in the range of 1 to 50 // m. If the particle diameter is less than 0.01 μm, the light blocking property of the light blocking substance is deteriorated, and sufficient characteristics cannot be obtained. Conversely, if the particle diameter exceeds 1 00 // m, the adhesion to the semiconductor light-emitting element of the light-blocking substance will be reduced. The shape of the powder is particularly preferably plate-like. As a result of in-depth research of the present invention, it is found that the thickness is within the range of 0.001 μm to 10 // m, especially the range of 1 V m to 0.5 // m, and the length is 0.01 μm to 100 // m. In the range, especially the thin plate-shaped powder in the range of 1 A m to 5 0 // m, it will be particularly effective. The plate-shaped powder forms a plate-shaped surface in parallel to the coating surface because the plate-shaped powder evaporates with the solvent and uses the surface tension of the solvent. Therefore, even if the film thickness is thin, a specular film with high coverage and high reflectance can be formed. When the thickness of the plate-shaped powder is less than 0.001 // m, the light-blocking substance will be deformed during coating, so that the films overlap each other to form a flat surface, resulting in a decrease in light reflectance. In the present invention, the method of coating the metal light-emitting substance or the light-blocking substance containing the powder on a semiconductor light-emitting element, in addition to direct, chemical vapor deposition, physical vapor deposition, In addition to methods such as coating, there is a method of mixing a resin for forming an adhesive, dispersing the resin with water or an organic solvent, etc., and then coating the resin on the surface of a semiconductor light-emitting device, followed by drying or hardening. The so-called binder-forming resin refers to the light emission of semiconductor light-emitting elements. 11- 535301 Five 'invention description (1G) has less absorption, higher dispersibility of light-blocking substances, and can be dissolved in water or organic solvents. Those who can form a coating after being coated and dried, or those that are dried after being coated and hardened by light, heat, etc., and those who can form a coating, if they are both, there is no particular limitation on the rest . For example, hydrocarbon resins, acrylic resins, ethyl acetate and ethylene glycol resins, halogen resins, nitrogen resins, phenol resins, amino resins, aromatic hydrocarbon resins, polyester resins, and polymers Resin type resin, silicone resin, polyurethane resin, epoxy resin, protein resin, etc. Examples of the hardening type resin that causes a crosslinking reaction after coating include UV-curable resins and thermosetting resins. These resins can be used alone or in combination of two or more. In addition, solvents used for dispersion include water, methanol, ethanol, isopropanol, n-propanol, n-butanol, methyl ethyl ketone, ethyl acetate, butyl acetate, acetone, dimethyl formaldehyde, methyl cellosolve, Ethylene glycol, propylene glycol, fluorine-based solvents, toluene, xylene, and the like. These solvents can be used alone or in combination of two or more. The metal powder and pigment powder contained in the light-blocking substance of the present invention can be used singly or in combination of two or more kinds, and the blending amount is based on the dry weight relative to the entire dry portion of the light-blocking substance, preferably 5 ~ 99% by mass, particularly preferably 20 to 95% by mass, and even more preferably 40 to 95% by mass. If the blending amount is less than 5% by mass, the light blocking property may be insufficient. On the other hand, if the blending amount exceeds 99% by mass, the adhesion to the light-emitting elements of the light-blocking substance will deteriorate. The coating material of the light-blocking substance of the present invention may also contain a UV absorber, an oxidation inhibitor, a dispersant, a fluorescent whitening agent, and a defoamer -12-535301 in accordance with the requirements. 5. Description of the invention (11), Various additives such as lubricants and preservatives. The so-called UV absorbers include benzotriazole-based, tri-AS2-based, and benzophenone-based UV absorbers, such as TINUVIN234, TINUVIN320, TINUVIN1 577, CHIMASSORB81 (product name, manufactured by Chiba Speciality Chemical). System), the ideal addition amount is 0 · 0 1 to 10% by mass. The so-called oxidation inhibitors are phenol-based, phosphate-based, thioether-based, etc., such as Atkastab (7th, 7th, 7th, 7th, and 7th), 80-20, AO-30, PEP-4C, PEP-8, AO-23, AO-412S (product name, manufactured by Asahi Denka Kogyo Co., Ltd.), the best addition amount is 0.01 to 10% by mass. The so-called dispersants are Diyinger (Ningΐ-Λ〇ΕΡ, Bo Yiru (Qi X) 520, Bo Yiru (Qi X) 521, Bo Yiru (Qi X) 530 (product name, Kao (Stock) (product made by the company), etc., it is best to add the amount of 0.01 to 10% by mass. The so-called fluorescent whitening agents, such as UVITEX OB, UVITEX 〇Β-P (product name, Ciba Chemical Specialty Products (stock) company made ), It is best to add an amount of 0.001 to 10% by mass. The so-called defoaming agents are, for example, Emal (Gong 7 Αy) 4 〇4, Emar Sol. (Gong 7 乂-less) 0- 15R (product name, manufactured by Kao Co., Ltd.), etc., it is best to add an amount of 0.001 to 10% by mass. The so-called lubricant is like Lunac (less than V) S-3 0, S -40. Fatty acid ammonium S, I-ser (Tirir), T-95 (product name, manufactured by Kao Corporation), etc., the best addition amount is 0 · 0 1 ~ 10 0% by mass. The so-called preservatives are like the European Code (eight γ Cai Ning ^)-S, the European code (X Cai X ^)-421, the Amor Code (Qiangan & Ning ^) Alk (product name, Yamato Chemical Industrial (stock) company), etc., the best addition is 0 · 0 1 ~ 10% by mass. The above additives are not limited to those exemplified above. If the thickness of the light-blocking substance is too thin, sufficient hair cannot be obtained -13- 535301 V. Description of the invention (12)
光阻障，而無法獲得充分的發光指向性，所以不爲喜好。 反之，若厚度過厚的話，則塗膜將便脆弱，而可能無法獲 得足夠的密接性，所以亦不爲喜好。阻光性物質的較佳厚 度，在0.1〜100/i m，最好爲1〜50// m。阻光性物質可重 複塗布2次以上，或將2成分不同的阻光性物質，重複塗 佈2層以上，在此情況下，可將整體厚度視爲阻光性物質 厚度。 在半導體發光元件被覆阻光性物質的結晶表面上，最好 預先形成凹凸。此凹凸除可促進姐光性物質之塗布材料對 結晶表面的均勻擴散，亦具有提昇阻光性物質密接性的功 效。凹凸的深度，可配合阻光性物質中的阻光性成分大小 、或被覆材料黏度等，而設定適當深度，在本發明中所例 示的阻光性物質，最好在〇. 1〜5 0 // m範圍內，尤以在0.1 〜30 // m範圍內爲佳，更以在0.1〜15 /z m範圍內爲更佳。The light barrier is not preferred because it cannot obtain sufficient light directivity. Conversely, if the thickness is too thick, the coating film will be fragile, and sufficient adhesion may not be obtained, so it is also not preferable. The preferred thickness of the light-blocking substance is 0.1 to 100 / i m, and most preferably 1 to 50 // m. The light-blocking substance may be applied twice or more, or two or more layers of light-blocking substances having different components may be repeatedly applied. In this case, the entire thickness may be regarded as the thickness of the light-blocking substance. It is preferable that the semiconductor light-emitting element is covered with a light-blocking substance on the crystal surface in advance by forming irregularities. In addition to this unevenness, it can promote the uniform diffusion of the coating material of the light-emitting substance to the crystal surface, and also has the effect of improving the adhesion of the light-blocking substance. The depth of the unevenness can be set to an appropriate depth in accordance with the size of the light-blocking component in the light-blocking substance, or the viscosity of the coating material. The light-blocking substance exemplified in the present invention is preferably 0.1 to 5 0. // In the range of m, it is preferably in the range of 0.1 to 30 // m, and more preferably in the range of 0.1 to 15 / zm.
在本發明中，將阻光性物質，效率佳、再重現性佳、且 均勻的被覆半導體發光元件之光取出部位的其中一部份上 的方法，有如在半導體發光元件用晶圓上，對應被覆光取 出部以外之阻光性物質部份，形成溝槽後，於該溝槽部 份中被覆阻光性物質，並使該阻光性物質乾燥、或硬化， 然後切斷晶圓而形成各個半導體發光元件的方法，或者是 將半導體發光元件，在具黏接性薄板上相隔間隙排列後， 在排列此半導體發光元件的間隙部份中，灌入阻光性物質 ，便可使側面被覆阻光性物質。此時，阻光性物質以略較 多量，使其溢出的方式灌入，將阻光性物質被覆於光取出 -14- 535301 五、發明説明（13) 部其中一部份後，將該阻光性物質乾燥、或硬化，然後將 各元件分離的方法，亦可獲得指向性高的發光。在形成此 阻光性物質時，爲防止發光面與電極上遭阻光性物質污染 ，所以可預先利用光阻材料或黏貼膠帶等有機保護材料、 Si〇2膜或ShA膜等無機保護材料，被覆此部份後，然後 再形成阻光性物質，之後再去除保護膜。 阻光性物質的塗布方法，有如旋塗法、浸塗法、灌燒法 、澆塗法、噴塗法等。此等，塗布亦可進行數次。此時， 可採用不同組成的被覆材料。此外，乾燥亦可採用熱、減 壓乾燥等一般的塗層乾燥方法。 塗布被覆材料時的半導體發光元件間隔，亦可在考慮配 合所欲形成之阻光性物質厚度、被覆材料黏度等因素下， 形成適當的寬度。但，若較5 μηα狹窄的話，則被覆材料將 不易進入’而造成無法均勻塗布的方法。當在晶圓上形成 溝槽並形成阻光性物質時，雖溝槽越寬的話，所形成的阻 光性物質的部份佔發光元件比例將變大，但因爲即便此部 份大於必要大小以上，阻光效果亦無法改變，所以溝槽的 寬度最好爲5〜500 // m。 當將半導體發光兀件相隔間_排列，並將阻光性物質塗 布於間隔中時，即便此間隔較必要以上寬廣，阻光性物質 厚度的效果亦幾乎無變化，所以元件的間隔最好在5〜 3000 // m範圍內。 在更進一步詳細例示上述製造方法。預先在半導體發光 兀件用嘉晶晶圓上形成電極，配合需要在無需塗布阻光性 -15- 535301 五、發明説明（14) 物質的位置處，施行罩幕處理。在形成供塗布阻光性物質 之溝槽的加工處理中，可對此晶圓採用適用光蝕刻的台面 蝕刻法、或採用鑽石輪劃片機在晶圓上施行溝槽形成加工 的小塊切割法。在溝槽中滲透塗布液，而形成光反射上所 需要膜厚的寬度，與具有效反射功能的所需深度。溝槽寬 度係必須涵蓋被覆膜所需要厚度的充分厚度，若寬度較狹 窄的話，模具尺寸將小型化，雖有助於成本效益，但卻造 成液灌注上的困難度。所以，一般最好爲5 // m〜5 0 0 μ m 的寬度，尤其〜300/im爲佳，更以20//m〜180// m爲更佳。此處，所謂溝槽的寬度，係指溝槽最寬廣部份 的距離。 因爲溝槽深度係隨磊晶晶圓構造的不同其有效深度亦將 互異，所以必須隨磊晶層厚改變條件。因爲附帶GaAs基 板且發光波長8 80nm以下的GaAlAs半導體發光元件，將 隨GaAs基板而使放射光被吸收，所以僅需覆蓋磊晶層部 份便可，並毋須將溝槽過渡深入基板深處。 阻光性物質之其他塗布方法，有如旋塗法、噴塗法等方 法。此情況下，雖相較於僅單純將液灌注入溝槽中之情況 ，可增加膜均勻性，但因爲阻光性物質可能在塗布溶液中 產生分離，所以必須注意阻光性物質塗布時的液組成或塗 布條件。 形成黏接劑的樹脂，在爲提昇對溝槽的滲透性之下，可 使用溶劑較低黏性，或添加少量的界面活性劑俾改善對材 料的潤濕性，藉此便可提升滲透性。另，可預先在溝的側 -16- 535301 五、發明説明（15) 面上，利用蝕刻或機械式形成凹凸，而利用毛細管現象提 昇液的滲透性。然後，將溝槽部份利用鑽石輪劃片機，切 斷至晶圓下方，將元件分離而形成半導體發光元件。此外 ’亦可配合溝槽，利用刮刀在晶圓背面形成傷痕後，再將 元件分離。 如GaP、GaN系半導體發光元件之類，一般基板無法接 收放射光之情況時，最好採用小塊切割法或碎片法，將元 件一個個分離呈單體後，在塗布阻光性物質，便可防止來 自元件側面的光洩漏。此方法亦可配合需要，在毋須塗布 阻光性物質的電極或光取出部位處，預先施行罩幕處理後 ，再進行塗布處理。 當採取利用毛細管現象的塗布處理時，可採取將元件依 特定間隔排列，並於此間隔中灌注入阻光性物質，且塗布 元件側面的方法便可簡單的進行。此情況下，隨元件與元 件的間隔，因爲液注入方法將互異，所以，若元件間隔過 於狹窄的話，雖將隨毛細管現象而進行液的注入，對液黏 性若過大的話，液將無法滲透，而造成無法順利的進行被 覆。反之，在狹窄的情況時，必須降低所注入液的黏性。 依照本發明的硏究，當寬度在500 μ m以下時，便必須將 黏性調整至50cp以下。此種利用毛細管現象的塗布方法 ，在處理元件的固定上，可利用黏貼板，在進行塗布。黏 貼板可在利用由聚乙烯、氯化乙烯、丙烯酸系薄板等上， 形成黏著層者。此情況下的元件與元件之排列，若具5 # m 以上間隔的話，便可塗布，而若間隔過廣的話，將無法有 -17- 535301 五、發明説明（16) 效的顯現出毛細管現象，而無法塗布。所以，元件排列的 間隔最好在5〜3000 // m範圍內，尤以在10〜1 000 // m範 圍內主爲佳，更以在50〜300//m範圍內主爲更佳。使用 黏接板之方法的溶劑，必須選擇不致損及導板的溶劑系。 其他塗布方法，可利用旋塗法。此情況下，因爲利用離 心力，所以即便比較高黏度者仍可進行塗布，取膜厚亦可 均勻化。惟，在旋塗法中，當經分散之阻光性物質與黏接 液間有比重差時，因爲塗布中產生分離，而造成阻光性物 質分散不均的情形，所以必須注意液的調配。此情況時， 不論液的黏性，相關所排列的寬度，最好具有5 // m以上 的寬度。寬度並無上限，當然若寬度過寬廣的話，因爲每 單次處理數量將減少，而導致生產性的降低。 其他方法，譬如可利用噴塗法。此方式雖可均勻的塗布 ，但卻有塗層厚度變厚的趨勢，所以特性上屬適用於欲塗 布較厚膜之情況時的方法。 本發明之半導體發光元件係如同習知半導體發光元件， 可利用樹脂進行封裝。而使用於封裝的樹脂，係對由半導 體發光元件所放射出的光呈透明者，最好採用由環氧樹脂 、尿素樹脂、矽膠樹脂等中任選一種者。此外，若對供封 裝的樹脂（封裝齊!I)賦予作爲阻光性物質之功能的話亦無妨 。此情況時，可將阻光性物質混入封裝劑中，再於光取出 部位處混入阻光性物質，並降低對光取出部位處之阻光性 物質的混入量便可。 藉由本發明知半導體發光元件，便可將發光指向性較高、 535301 五、發明説明（17) 發光徑較小，信賴性高、小型且發光輸出較高的半導體發 光元件，進行與習知半導體發光元件相同型態或經樹脂封· 裝的半導體發光元件的型態。就用途上，除習知半導體發 光元件所採用的用途之外，亦可適用於雷射二極體或電流 狹窄型半導體發光元件的用途上，特別係使用於檢測物體 變位量或位置等各種光學偵測器、或紅外線通信、光纖用 光源等光通訊裝置發光部。 依照本發明之半導體發光元件，便可解決習知半導體發 光元件或雷射二極體、或電流狹窄型半導體的發光指向性 、高輸出化、高信賴性、低價格化等問題，且藉由將本發 明之半導體發光元件搭載於各種機器上，便可達機器的高 信賴性、低價格化、小型化、低消耗電力化等功效。 【實施例】 以下，藉由實施例、比較例，針對本發明內容進行更具 體的說明。惟，本發明並不僅限於此。 (實施例1〜10) 採用發光波長660n m之可見發光兀件用嘉晶晶圓，製 造本發明之半導體發光元件。磊晶晶圓的構造，係在p型 GaAs 基板上’晶晶沉積 p 型 Gai_XjAlxiAs(0.5<xl<〇.8)透 明基板層、P型覆蓋層、p型 Gai-dAlxsAsCxS^O.SS)活性層、及 p 型 Ga卜x4A1x4As(0.5< x4<0.8)覆蓋層後，再去除p型GaAs基板而製得雙異質結 構之直徑45mm、厚度1 80 // m之晶圓。 在此磊晶晶圓雙面上，形成Au系合金蒸鍍，並施行熔 -19- 535301 立、發明説明（18) 金處理後，便形成歐姆電極。然後，在η面之電極上，利 用微影法形成間隔3 5 0 // m的1 2 0 // m φ開口部。依晶圓之 η面電極之開口部位於元件中央位置方式，切割分離成 3 5 0 μ m小塊後，再利用氨-過氧化氫，以飽刻方式，製作 多數個330//mx330//mxl80//m的半導體發光元件。將元 件側面利用表面粗糙計測量結果，得知凹凸深度5〜8 // m。 將所製得之半導體發光元件，在黏貼板上，以2 0 0 // m 間隔整齊排列成格子狀，注意不要污染到p面電極，利用 旋塗法在兀件側面上塗布表1所示條件的阻光性物質。在 阻光性物質的黏接劑上係採用丙烯酸系樹脂，而溶劑則採 用甲醇。將此阻光性物質在40°C下進行5小時乾燥，而硬 化。第1圖所示係由光取出方向觀看所製得半導體發光元 件的示意圖。第2圖所示係所製得半導體發光元件的剖面 示意圖。 本實施例所製得之半導體發光元件的評估結果，如表1 所示。另，表1之穿透率係指將阻光性物質被覆於半導體 發光元件的光取出部位後之穿透率，電阻亦係指將阻光性 物質被覆於半導體發光元件的光取出部位後之電阻。 •20- 535301 五、發明説明（19) 【表1】 發光強度（a.u.) --- No 阻光性物質 粒徑 被覆膜 上面端 穿透率 電阻 (β m) (β m) (光放出 側面端 (%) (Ω ) 方向） 實施例1 A1(環氧系樹脂被覆） 20 30 0.98 0.27 40 3xl〇8 2 A1 (厚度0.2 // m板狀、 表面氧化） 30 5 1.00 0.03 9 2xl〇7 3 A1 (將實施例2形成2 30 10 1.01 0.00 0 2xl〇7 層） 4 Ag(環氧系樹脂被覆） 8 20 1.01 0.13 22 8x10s 5 Fe(表面氧化） 20 35 0.95 0.22 27 7xl08 6 氧化鈦 5 15 1.05 0.25 35 2xlO,0 7 AS1菁黑 2 8 0.94 0.18 21 5xl09 8 鉻酸鈀 5 20 0.99 0.24 28 lxlO9 9 A1(環氧系樹脂被覆）+ 20 35 0.97 0.20 24 4x1 08 AS1菁黑 2 10 氧化鈦+A1(在實施例6 5 1 5 + 5 1.06 0.02 6 6xl08 上形成實施例2) 30 11 A1箔 1〜30 2 0.89 0.01 2 2xl08 12 A1箔 1〜30 2 1.07 0.02 2 2xl08 13 A1箔 1〜30 2 2.53 0.00 0 2xl08 比較例 1 - - • 1.00 1.00 2 - - 0.82 0.51 . 3 - - 細 1.00 1.00 4 - - 2.16 1.98 5 - - - 2.52 1.22 - • (比較例1) 採用實施例1的半導體發光元件，但未在元件面上塗布 阻光性物質，進行評估。評估結果如表1所示。 由表1中得知，本發明之被覆阻光性物質的半導體發光 元件，側面端的發光將被阻遮，而僅由上面端發光，而獲 -21- 535301 五、發明説明（2G ) 得較高發光指向性的元件。另，實施例3,4,6，10的元件中 ，相較於未塗布阻光性物質的比較例元件下，得知提昇上 面端的發光強度，而可獲得提昇阻光性物質反射光的上面 端發光輸出。 (實施例11) 第3圖所示係本實施例所製得之半導體發光元件的剖面 示意圖。所製得之半導體發光元件用磊晶晶圓，係在Zn 摻雜p型GaAs基板單結晶基板13(厚度250 // m)上，利用 液相嘉晶法，沉積20 // m之添加p型摻質Zn的GaAlAs 覆蓋層14，再於其上沉積約1 // m左右之採用Zn摻質的 GaAlAs活性層15、30// m之採用η型摻質Te的GaAlAs 覆蓋層16。依使發光波長爲660nm方式，將活性層中的 混晶比調整爲Gao.wAlmAs。ρ，η型覆蓋層則依對 66 0nm之光呈透明狀，設成Ga〇.35Al().65As。由此晶圓所製 得之半導體發光元件，因爲p型GaAs基板13將吸收 660nm的光，所以光並未由基板表面射出，在基板上僅射 出來自GaAlAs層表面上所發光的光。沉積磊晶層之晶圓 則硏磨基板端，而加工呈240 // m的厚度。 P端歐姆電極12係使用AuBe合金，而η端歐姆電極 18則使用AuGeNi合金。電極圖案係以背面的GaAs基板 爲/5電極，並以表面電極爲具1 5 0 // m p開口部的電極， 且以該開口部爲光取出窗。在電極部份與光取出窗中，預 先使用光阻形成罩幕層後，利用鑽石輪劃片機在晶圓上的 縱橫方向上，形成間隔400 // m、寬度80 // m、深度1 00 // m -22- 535301 五、發明説明（21 ) 的溝槽。形成溝槽後，將含由A1所形成的金屬箔小片約 50%、與樹脂50%，利用溶劑形成稀釋5倍的液，並注入 溝槽中。此處所採用的A1箔，係厚度0.02 // m且平均大 小1 0 // m，尺寸分布由1 // m到3 0 // m左右的A 1箔。將 此晶圓在溫度50°C、時間60分鐘的條件下，進行熱處理 後，將溶劑蒸發，而在元件側面上形成阻光性物質1 7。塗 層厚度，依塗布時形成約1 0 // m之狀態而決定其用量，經 乾燥後則形成約2 // m厚的膜層。然後，將罩幕處理時所 使用的光阻予以去除，並利用刮刀由背面沿對應溝槽的部 份進行刮傷後，再利用小塊切割機，切割分離成各個晶片 ，而完成元件。 在塗層中，A1箔在元件表面上水平密接排列，所獲得 之光反射率爲全反射率90%、正反射率（垂直方向反射光 相對由垂直層膜方向射入光的強度比）80%。將此半導體發 光元件安裝於未具光反射杯的平板狀TO-1 8晶體管座上， 在順向電流20mA時，測量指向特性，獲得顯示出除光取 出部位以外均無漏光之理想指向特性的半導體發光元件。 評估結果如表1所示。發光輸出利用採用積分球的全光量 測量爲l.lmW。 (比較例2) 本比較例所製得之半導體發光元件的剖面示意圖，請參 照閱第4圖所示。準備實施例1 1之晶圓，在未形成光反 射膜情況下’利用小塊切割機予以分離，而製成間隱400 # m的元件。此時的指向特性，如同實施例相同的方法進 -23- 535301 五、發明説明（22 ) 行測量’因爲元件側面將有漏光，所以指向特性不佳。評 估結果如表1所不。發光輸出利用採用積分球的全光量測 量爲1.3mW。比較例2相較於實施例1 1下，發光指向性 較差劣，驗證本發明的有效性。 (實施例12) 本實施例所製得之半導體發光元件的剖面示意圖，請參 •閱第5圖所示。在本實施例中，乃採用於Zn摻雜p型 GaAs基板單結晶基板（厚度25 0 // m)上，·利用液相磊晶法 ，沉積100/z m之GaAlAs結晶中添加p型摻質Zn的透明 基板層2 8後，再沉積2 0 // m由G a A1A s結晶所組成之添 加Zn的p型覆蓋層29，然後再於其上沉積約1 # m左右 由GaAlAs結晶所組成之使用摻質Zn的活性層30及30 // m之由GaAlAs結晶所組成之添加n型摻質Te的η型覆 蓋層3 1，合計4磊晶層的磊晶晶圓。依使發光波長爲 6 6 0nm方式，將活性層中的混晶比調整爲GaQ.65Al().35As。 P型透明基板層、P，η型覆蓋層則依對660nm之光呈透明 狀，設成GamAlo.wAs。然後，將GaAs基板利用触刻處 理予以去除，而完成基板未吸收光的磊晶晶圓。所以，在 此種型態的半導體發光元件中，除電極外，結晶表面全部 均將放射光。 P端歐姆接合金屬27係使用AuBe合金，而n端歐姆電 極33則使用AuGeNi合金。電極圖案係以背面的GaAs基 板爲/5電極，並以表面電極爲具1 5 0 // m p開口部的電極 ’且以該開口邰爲光取出窗。將此晶圓貼合於具由氯化乙 -24- 535301 五、發明説明（23) 少希所組成之丙烯酸系黏接層的黏接板上，利用小塊切割機 ’將結晶以間隔400 // m完全切斷成正方形。將其放置於 拉力器上’一邊加熱，一邊將元件與元件拉伸爲特定間隔。 然後，將含由A1所形成的金屬箔小片約50%、與樹脂 50% ’利用溶劑形成稀釋5倍的液，並注入溝槽中。此處 所採用的A 1箱，係厚度〇 · 〇 2 // m且平均大小1 0 // m，尺 寸分布由1 // m到3 0 // m左右的A 1箔。將此晶圓在溫度 30°C、時間360分鐘的條件下，進行熱處理後，將溶劑蒸 發，而在元件側面上形成阻光性物質3 2。塗層厚度，依塗 布時形成約1 〇 // m之狀態而決定其用量，經乾燥後則形成 約2 // m厚的膜層。 在塗層中，A1箔在元件表面上水平密接排列，其光反 射率，如同實施例1 1般，全反射率90%、正反射率80% 。將此半導體發光元件安裝於未具光反射杯的平板狀Τ0-1 8晶體管座上，在順向電流20Ma(DC)時，測量指向特性 ，獲得顯示出除光取出部位以外均無漏光之理想指向特性 的半導體發光元件。評估結果如表1所示。發光輸出利用 採用積分球的全光量測量爲2.1 mW。 (比較例3) 本比較例所製得之半導體發光元件的剖面示意圖，請參 照閱第6圖所示。準備實施例1 2之晶圓，在未形成光反 射膜情況下，進行特性評估。此時所實施的指向特性，係 採用如同實施例1 2的方法進行測量，因爲元件側面將有 漏光，所以指向特性不佳。另，發光輸出利用採用積分球 -25- 535301 五、發明説明（24 ) 的全光量測量爲2.6mW。評估結果如表1所示。相較於實 施例1 1，1 2下，發光指向性較差劣，驗證本發明的有效 性。 (實施例13) 採用無基板之高輸出型紅色半導體發光元件，使用於光 偵測用機器的製造上。 在本實施例中，係採用實施例1 2所示的半導體發光元 件。其元件係預先在光取出部位處利用光阻樹脂施行罩幕 處理。將此元件，利用Ag糊劑安裝於導線框中，而封裝 成晶片型半導體發光元件。在此晶片半導體發光元件中， 乃使用未設置光反射板，光反射杯的平板狀導線框。另一 端的電極則利用焊接法進行配線。 然後，將含由A 1所形成的金屬箔小片約5 0%、與樹脂 50%，利用溶劑形成稀釋5倍的液，並注入溝槽中。此處 所採用的A1箔，係厚度0.02/z m且平均大小10// m，尺 寸分布由1 // m到3 0 // m左右的A 1箔。將此導線框在溫 度50°C、時間60分鐘的條件下，進行熱處理後，將溶劑 蒸發，而在元件側面上形成阻光性物質32。塗層厚度，依 塗布時形成約20 // m之狀態而決定其用量，經乾燥後則形 成約3 // m厚的膜層。然後，將塗布於光取出用窗上的罩 幕樹脂予以剝離，並去除光取出部位處的光反射物，利 用環氧樹脂進行封裝而完成元件。 在塗層中’ A1箔在元件表面上水平密接排列，其光反 射率，如同實施例1 1，12般，全反射率90%、正反射率 -26- 535301 五、發明説明（25 ) 80%。在此晶片半導體發光元件之電流20Ma(DC)時，測 量指向特性，獲得顯示出除光取出部位以外均無漏光之理 想指向特性的晶片半導體發光元件。評估結果如表1所示 。發光輸出利用採用積分球的全光量測量爲4.5mW。 (比較例4)In the present invention, a method of covering a part of a light-extracting portion of a semiconductor light-emitting element with high efficiency, good reproducibility, and uniformity on a light-blocking substance is as described above on a wafer for a semiconductor light-emitting element. After forming a groove corresponding to a light-blocking substance portion other than the covered light extraction portion, a light-blocking substance is covered in the groove portion, and the light-blocking substance is dried or hardened, and then the wafer is cut off. A method for forming each semiconductor light-emitting element, or by arranging semiconductor light-emitting elements on an adhesive sheet with a gap therebetween, and impregnating a light-blocking substance into the gap portion of the semiconductor light-emitting element, the sides can be made. Covering light-blocking substances. At this time, the light-blocking substance is poured in a slightly larger amount so that it overflows, and the light-blocking substance is covered with light for removal. -14-535301 V. One part of the description of the invention (13). The method of drying or curing the optical substance and then separating each element can also obtain high directivity light emission. When forming this light-blocking substance, in order to prevent the light-emitting surface and the electrode from being contaminated by the light-blocking substance, an organic protective material such as a photoresist material or an adhesive tape, an inorganic protective material such as a SiO2 film or a ShA film may be used in advance. After covering this part, a light-blocking substance is formed, and then the protective film is removed. The coating method of the light-blocking substance is, for example, a spin coating method, a dip coating method, a potting method, a pouring method, or a spray method. In these cases, coating may be performed several times. In this case, coating materials of different compositions may be used. In addition, general coating drying methods such as heat and reduced-pressure drying can also be used for drying. The interval of the semiconductor light-emitting element when the coating material is applied may be formed into an appropriate width in consideration of factors such as the thickness of the light-blocking substance to be formed and the viscosity of the coating material. However, if it is narrower than 5 μηα, it will be difficult for the coating material to enter 'and it will be impossible to apply uniformly. When a trench is formed on the wafer and a light-blocking substance is formed, although the wider the trench, the proportion of the light-blocking substance formed in the light-emitting element will increase, but even if this part is larger than necessary, Above, the light blocking effect cannot be changed, so the width of the trench is preferably 5 ~ 500 // m. When the semiconductor light-emitting elements are arranged in the compartments and the light-blocking substance is coated in the gap, even if the gap is wider than necessary, the effect of the thickness of the light-blocking substance hardly changes, so the interval between the elements is preferably at 5 to 3000 // m range. The above-mentioned manufacturing method is exemplified in more detail. Electrodes are formed on the Jiajing wafer for semiconductor light-emitting elements in advance, and it is necessary to perform a mask treatment at the position of the substance in accordance with the need to apply light-blocking properties -15-535301. In the process of forming a groove for coating a light-blocking substance, the wafer may be subjected to a table etching method suitable for photolithography, or a small piece of dicing may be performed on the wafer by using a diamond wheel scriber. law. The coating liquid is penetrated into the grooves to form a width of a film thickness required for light reflection and a depth required for effective reflection function. The width of the groove must cover a sufficient thickness of the required thickness of the coating film. If the width is narrow, the die size will be miniaturized, which is cost-effective, but it will cause difficulty in liquid perfusion. Therefore, it is generally best to have a width of 5 // m ~ 50 0 μm, especially ~ 300 / im, more preferably 20 // m ~ 180 // m. Here, the width of the groove refers to the distance of the widest part of the groove. Because the depth of the trenches varies with the epitaxial wafer structure, the conditions must be changed with the thickness of the epitaxial layer. Because a GaAlAs semiconductor light-emitting element with a GaAs substrate and an emission wavelength below 8 80 nm will absorb the emitted light along with the GaAs substrate, it only needs to cover the epitaxial layer portion, and there is no need to make the trench transition deep into the substrate. Other coating methods for the light-blocking substance include methods such as a spin coating method and a spray coating method. In this case, although the uniformity of the film can be increased compared to the case where the liquid is simply poured into the groove, the light-blocking substance may be separated in the coating solution, so it is necessary to pay attention to the Liquid composition or coating conditions. In order to improve the permeability to the groove, the resin forming the adhesive can use a lower viscosity of the solvent or add a small amount of a surfactant to improve the wettability of the material, thereby improving the permeability. . In addition, the grooves can be formed in advance by etching or mechanically on the side of the trench. -16- 535301 V. Description of Invention (15), and the capillary phenomenon can be used to improve the permeability of the liquid. Then, the groove portion was cut under the wafer using a diamond wheel dicing machine to separate the elements to form a semiconductor light emitting element. In addition, the components can also be separated after the groove is formed, and a scratch is formed on the back surface of the wafer by a scraper. Such as GaP, GaN-based semiconductor light-emitting elements, etc., when the general substrate cannot receive the radiated light, it is best to use the small-cut method or the chip method to separate the elements into monomers, and then apply a light-blocking substance. Prevents light leakage from the side of the element. This method can also meet the needs, and in the electrode or light extraction site that does not need to be coated with a light-blocking substance, a mask treatment is performed beforehand, and then a coating treatment is performed. When the coating process using the capillary phenomenon is adopted, it is possible to arrange the elements at a specific interval, and inject a light-blocking substance into the interval, and the method of coating the side of the element can be simply performed. In this case, the liquid injection method will be different depending on the distance between the components. Therefore, if the distance between the components is too narrow, the liquid will be injected according to the capillary phenomenon. If the viscosity of the liquid is too large, the liquid will not be able to flow. Infiltration, which makes it impossible to cover smoothly. Conversely, in narrow cases, the viscosity of the injected liquid must be reduced. According to the study of the present invention, when the width is 500 μm or less, the viscosity must be adjusted to 50 cp or less. This coating method using the capillary phenomenon can be applied by using an adhesive plate for fixing the processing element. The adhesive sheet can be made of polyethylene, vinyl chloride, or acrylic sheet to form an adhesive layer. In this case, the components and the arrangement of the components can be coated if the spacing is more than 5 # m, and if the spacing is too wide, it will not be -17- 535301. 5. Description of the invention (16) Capillary phenomenon appears effectively Without coating. Therefore, the interval of component arrangement should preferably be in the range of 5 to 3000 // m, especially in the range of 10 to 1 000 // m, and more preferably in the range of 50 to 300 // m. The solvent used in the method of using the adhesive plate must be selected from a solvent system that does not damage the guide plate. For other coating methods, a spin coating method can be used. In this case, since the centrifugal force is used, even a relatively high viscosity person can apply the coating, and the thickness can be uniformized. However, in the spin-coating method, when there is a difference in specific gravity between the dispersed light-blocking substance and the adhesive liquid, it is necessary to pay attention to the preparation of the liquid because the light-blocking substance is unevenly dispersed due to separation during coating. . In this case, irrespective of the viscosity of the liquid, it is preferable that the width of the arrangement has a width of 5 // m or more. There is no upper limit on the width. Of course, if the width is too wide, the number of treatments per single operation will be reduced, resulting in a reduction in productivity. Other methods, such as spraying, can be used. Although this method can be applied uniformly, there is a tendency that the thickness of the coating layer becomes thick. Therefore, the method is suitable for the case where a thick film is to be coated. The semiconductor light-emitting element of the present invention is a conventional semiconductor light-emitting element and can be encapsulated with a resin. The resin used for encapsulation is transparent to the light emitted from the semiconductor light-emitting element, and it is preferable to use any one of epoxy resin, urea resin, and silicone resin. In addition, it is not a problem if the resin to be encapsulated (encapsulated! I) is provided with a function as a light-blocking substance. In this case, the light-blocking substance can be mixed into the encapsulant, and then the light-blocking substance can be mixed in the light-removing part, and the amount of light-blocking substance in the light-removing part can be reduced. By knowing the semiconductor light-emitting element of the present invention, the light-emitting directivity is high, 535301 V. Description of the invention (17) A semiconductor light-emitting element having a small light-emitting diameter, high reliability, a small size, and a high light-emitting output. The same type of light-emitting element or the type of semiconductor light-emitting element encapsulated with resin. In terms of applications, in addition to the conventional applications of semiconductor light-emitting devices, it can also be used for laser diodes or narrow-current semiconductor light-emitting devices. It is especially used for detecting the displacement or position of objects. Optical detectors, or light-emitting sections of optical communication devices such as infrared communication and light sources for optical fibers. According to the semiconductor light-emitting element of the present invention, the problems of light directivity, high output, high reliability, and low price of conventional semiconductor light-emitting elements, laser diodes, or narrow current-type semiconductors can be solved. By mounting the semiconductor light-emitting element of the present invention on various devices, the functions of high reliability, low price, miniaturization, and low power consumption of the device can be achieved. [Examples] Hereinafter, the contents of the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to this. (Examples 1 to 10) A semiconductor light-emitting device of the present invention was manufactured using a Jiajing wafer for a visible light-emitting element having a light emission wavelength of 660 nm. The structure of an epitaxial wafer is based on a p-type GaAs substrate. 'P-type Gai_XjAlxiAs (0.5 < xl < 〇.8) transparent substrate layer, P-type cover layer, p-type Gai-dAlxsAsCxS ^ O.SS) After the active layer and the p-type Gab x4A1x4As (0.5 < x4 < 0.8) cover layer, the p-type GaAs substrate was removed to prepare a double heterostructure wafer having a diameter of 45 mm and a thickness of 1 80 // m. On both sides of this epitaxial wafer, Au-based alloy evaporation is formed, and -19-535301 stand-up is applied. (18) After the gold treatment, an ohmic electrode is formed. Then, on the electrode on the η plane, a 1 2 0 // m φ opening portion with an interval of 3 5 0 // m is formed by a lithography method. According to the way that the opening of the n-plane electrode of the wafer is located at the center of the element, after cutting and separating into small pieces of 350 μm, a large number of 330 // mx330 // are produced using ammonia-hydrogen peroxide in a saturated manner. mxl80 // m semiconductor light emitting element. The surface of the element was measured with a surface roughness meter, and the depth of the unevenness was 5 to 8 // m. The semiconductor light-emitting elements obtained were arranged neatly in a grid pattern at an interval of 2 0 0 // m on the adhesive board, taking care not to contaminate the p-plane electrode, and coating the side surfaces of the element by a spin coating method as shown in Table 1. Conditioning light-blocking substance. An acrylic resin was used as the light-blocking substance adhesive, and methanol was used as the solvent. This light-blocking material was dried at 40 ° C for 5 hours and hardened. Fig. 1 is a schematic view of a semiconductor light-emitting device obtained by viewing the light extraction direction. Fig. 2 is a schematic cross-sectional view of a semiconductor light-emitting device obtained. Table 1 shows the evaluation results of the semiconductor light-emitting element prepared in this example. In addition, the transmittance in Table 1 refers to the transmittance after the light-blocking substance is coated on the light-extracting portion of the semiconductor light-emitting element, and the resistance refers to the transmittance after the light-blocking substance is coated on the light-extracting portion of the semiconductor light-emitting element resistance. • 20- 535301 V. Description of the invention (19) [Table 1] Luminous intensity (au) --- No Particle size of the light-blocking substance Cover film Transmittance resistance (β m) (β m) (Light emission Side end (%) (Ω) direction Example 1 A1 (epoxy resin coating) 20 30 0.98 0.27 40 3xl〇8 2 A1 (thickness 0.2 // m plate shape, surface oxidation) 30 5 1.00 0.03 9 2xl〇 7 3 A1 (Example 2 is formed 2 30 10 1.01 0.00 0 2xl07 layer) 4 Ag (epoxy resin coating) 8 20 1.01 0.13 22 8x10s 5 Fe (surface oxidation) 20 35 0.95 0.22 27 7xl08 6 titanium oxide 5 15 1.05 0.25 35 2xlO, 0 7 AS1 Cyan Black 2 8 0.94 0.18 21 5xl09 8 Palladium Chromate 5 20 0.99 0.24 28 lxlO9 9 A1 (epoxy resin coated) + 20 35 0.97 0.20 24 4x1 08 AS1 Cyan Black 2 10 Titanium oxide + A1 (Example 2 was formed on Example 6 5 1 5 + 5 1.06 0.02 6 6xl08) 30 11 A1 foil 1 to 30 2 0.89 0.01 2 2xl08 12 A1 foil 1 to 30 2 1.07 0.02 2 2xl08 13 A1 foil 1 to 30 2 2.53 0.00 0 2xl08 Comparative Example 1--• 1.00 1.00 2--0.82 0.51. 3--Fine 1.00 1.00 4-- 2.16 1.98 5---2.52 1.22-• (Comparative Example 1) The semiconductor light-emitting element of Example 1 was used, but a light-blocking substance was not coated on the element surface and evaluated. The evaluation results are shown in Table 1. It is known from Table 1 that in the semiconductor light-emitting device covered with the light-blocking substance of the present invention, the light emission at the side end will be blocked, and only the upper end will emit light, and -21-535301 is obtained. 5. Description of the invention (2G) High light directivity element. In addition, in the devices of Examples 3, 4, 6, and 10, compared with the device of the comparative example which was not coated with the light-blocking substance, it was found that the light emission intensity of the upper end was increased, and the upper surface of the light-reflecting substance was improved. Terminal light output. (Embodiment 11) FIG. 3 is a schematic cross-sectional view of a semiconductor light-emitting element produced in this embodiment. The obtained epitaxial wafer for a semiconductor light-emitting element was deposited on a Zn-doped p-type GaAs substrate single crystal substrate 13 (thickness 250 // m), and a liquid phase chitosan method was used to deposit 20 // m of additional p The Zn-doped Zn-doped GaAlAs cladding layer 14 is deposited thereon with a Zn-doped GaAlAs active layer 15 of about 1 // m, and a 30 // m GaAlAs cladding layer 16 made of n-doped Te. The mixed crystal ratio in the active layer was adjusted to Gao.wAlmAs so that the emission wavelength was 660 nm. The ρ, n-type cover layer is transparent to light at 660 nm, and is set to Ga 0.35Al (). 65As. Because the p-type GaAs substrate 13 will absorb light at 660 nm in the semiconductor light-emitting device manufactured from this wafer, the light is not emitted from the substrate surface, and only the light emitted from the surface of the GaAlAs layer is emitted on the substrate. The wafer with the epitaxial layer was honed on the substrate end and processed to a thickness of 240 // m. The P-terminal ohmic electrode 12 is made of AuBe alloy, and the n-terminal ohmic electrode 18 is made of AuGeNi alloy. The electrode pattern uses a GaAs substrate on the backside as a / 5 electrode, a surface electrode as an electrode with an opening of 15 0 // m p, and the opening as a light extraction window. In the electrode part and the light extraction window, a photoresist is used to form a cover layer in advance, and then a diamond wheel scribe is used to form a space of 400 // m, a width of 80 // m, and a depth of 1 in the vertical and horizontal directions on the wafer. 00 // m -22- 535301 5. The groove of invention description (21). After the trench is formed, about 50% of the small metal foil sheet formed of A1 and 50% of the resin are used to form a 5-fold diluted solution with a solvent and injected into the trench. The A1 foil used here is an A 1 foil with a thickness of 0.02 // m and an average size of 1 0 // m, and a size distribution from about 1 // m to 3 0 // m. This wafer was heat-treated at a temperature of 50 ° C and a time of 60 minutes, and then the solvent was evaporated to form a light-blocking substance 17 on the side of the element. The thickness of the coating layer is determined according to the state of about 10 // m formed during coating. After drying, a film layer of about 2 // m thick is formed. Then, the photoresist used in the mask processing is removed, and the part along the corresponding groove along the back surface is scratched with a scraper, and then the chip is cut and separated into individual wafers using a small block cutter to complete the component. In the coating, A1 foil is arranged in close contact horizontally on the surface of the element, and the obtained light reflectance is 90% of total reflectance and regular reflectance (the intensity ratio of the reflected light in the vertical direction to the light incident from the direction of the vertical layer film) 80 %. This semiconductor light-emitting element was mounted on a flat TO-1 8 transistor base without a light reflection cup. When the forward current was 20 mA, the directional characteristics were measured to obtain the ideal directional characteristics that showed no light leakage except for the light extraction portion. Semiconductor light-emitting element. The evaluation results are shown in Table 1. The luminous output was measured to be l.lmW using the total light amount using an integrating sphere. (Comparative Example 2) A schematic cross-sectional view of a semiconductor light-emitting device produced in this comparative example is shown in FIG. 4. The wafer of Example 11 was prepared, and a light dicing machine was used to separate the wafer without forming a light-reflective film, and a 400-m-thick element was fabricated. At this time, the directivity characteristics were measured in the same way as in the examples. -23-535301 V. Description of the Invention (22) Measurement ’The directivity characteristics are not good because there will be light leakage on the side of the element. The evaluation results are shown in Table 1. The luminous output was measured at 1.3 mW using a total light measurement using an integrating sphere. Compared with Example 11, Comparative Example 2 has a poorer light directivity, which verifies the effectiveness of the present invention. (Embodiment 12) A schematic cross-sectional view of a semiconductor light-emitting element prepared in this embodiment is shown in FIG. 5. In this embodiment, a p-type dopant is added to a Zn-doped p-type GaAs substrate single-crystal substrate (thickness 25 0 // m) using a liquid phase epitaxy method to deposit 100 / zm GaAlAs crystals. After the Zn transparent substrate layer 28, 2 0 // m p-type cladding layer 29 composed of G a A1A s crystal was deposited, and then about 1 # m composed of GaAlAs crystal was deposited thereon An epitaxial wafer with an active layer 30 doped with Zn and 30 // m made of GaAlAs crystals and an n-type doped Te-added n-type capping layer 31, with a total of 4 epitaxial layers. The mixed crystal ratio in the active layer was adjusted to GaQ.65Al (). 35As so that the emission wavelength was 660 nm. The P-type transparent substrate layer and the P and η-type cover layer are transparent to light at 660 nm and are set to GamAlo.wAs. Then, the GaAs substrate is removed by an etching process, and an epitaxial wafer having no light absorption by the substrate is completed. Therefore, in this type of semiconductor light-emitting device, all the surfaces of the crystal except the electrodes emit light. The P-terminal ohmic junction metal 27 is made of AuBe alloy, and the n-terminal ohmic electrode 33 is made of AuGeNi alloy. The electrode pattern uses a GaAs substrate on the back as the / 5 electrode, and a surface electrode as the electrode with an opening of 15 0 // m p ′ and the opening 邰 as a light extraction window. This wafer was bonded to an adhesive board with an acrylic adhesive layer composed of ethyl chloride-24-535301 V. Description of the invention (23) Shao Xi, and the crystals were separated by 400 using a small cutting machine. // m is completely cut into a square. It is placed on a tensioner 'and the element is stretched to a specific distance while being heated. Then, a solution containing about 50% of the metal foil piece formed of A1 and 50% of the resin was diluted 5 times with a solvent, and injected into the groove. The A 1 box used here is A 1 foil with a thickness of 0 · 〇 2 // m and an average size of 1 0 // m. The size distribution ranges from 1 // m to 3 0 // m. This wafer was heat-treated at a temperature of 30 ° C and a time of 360 minutes, and then the solvent was evaporated to form a light-blocking substance 32 on the side of the device. The thickness of the coating depends on the state of about 10m // m when it is applied, and after drying, it forms a film about 2 // m thick. In the coating layer, the A1 foil is arranged in close contact horizontally on the surface of the element, and its light reflectance is the same as in Example 11 with a total reflectance of 90% and a regular reflectance of 80%. This semiconductor light-emitting element is mounted on a flat T0-1 8 transistor base without a light reflection cup. When the forward current is 20 Ma (DC), the directivity characteristics are measured, and the ideal result is that there is no light leakage except for the light-extracting part. A directional semiconductor light emitting element. The evaluation results are shown in Table 1. The luminous output was measured at 2.1 mW using a total light amount using an integrating sphere. (Comparative Example 3) A schematic cross-sectional view of a semiconductor light-emitting element prepared in this comparative example is shown in FIG. 6. The wafer of Example 12 was prepared, and characteristics were evaluated without forming a light reflecting film. The directional characteristics implemented at this time were measured in the same manner as in Example 12 because there would be light leakage from the side of the element, so the directional characteristics were not good. In addition, the luminous output is measured using an integrating sphere -25- 535301 5. The total light quantity of the invention description (24) is 2.6mW. The evaluation results are shown in Table 1. Compared with the embodiments 1 and 12, the directivity of light emission is poor, and the effectiveness of the present invention is verified. (Example 13) A high-output type red semiconductor light-emitting element without a substrate was used in the manufacture of a light detection device. In this embodiment, the semiconductor light-emitting element shown in Embodiment 12 is used. The element is previously subjected to a mask treatment using a photoresist resin at the light extraction portion. This element was mounted on a lead frame using Ag paste, and was packaged into a wafer-type semiconductor light-emitting element. In this wafer semiconductor light emitting element, a flat lead frame without a light reflection plate and a light reflection cup is used. The electrode on the other end is wired by soldering. Then, about 50% of the small piece of metal foil containing A1 and 50% of the resin were mixed with a solvent to form a 5-fold diluted solution with a solvent, and injected into the trench. The A1 foil used here is an A1 foil with a thickness of 0.02 / z m and an average size of 10 // m. The size distribution ranges from 1 // m to 3 0 // m. This lead frame was heat-treated at a temperature of 50 ° C and a time of 60 minutes, and then the solvent was evaporated to form a light-blocking substance 32 on the side of the element. The thickness of the coating layer is determined by the state of about 20 // m formed during coating, and a film layer of about 3 // m thick is formed after drying. Then, the masking resin coated on the light extraction window is peeled off, the light reflectors at the light extraction portion are removed, and the element is completed by packaging with epoxy resin. In the coating, the A1 foil is arranged in close contact horizontally on the surface of the element, and its light reflectance is the same as that of Examples 1 and 12 with a total reflectance of 90% and a regular reflectance of -26-535301. 5. Description of the invention (25) 80 %. At a current of 20 Ma (DC) on the wafer semiconductor light-emitting element, the directivity characteristics were measured, and a wafer semiconductor light-emitting element exhibiting the ideal directivity characteristics without light leakage except for the light extraction portion was obtained. The evaluation results are shown in Table 1. The luminous output was measured to be 4.5 mW using a total light amount using an integrating sphere. (Comparative Example 4)
準備實施例1 3之元件，在未形成光反射膜情況下，製 作晶片半導體發光元件，並進行特性評估。此時所實施的 指向特性，係採用如同實施例3的方法進行測量，因爲元 件側面將有漏光，所以指向特性不佳。另，發光輸出利用 採用積分球的全光量測量爲5 · 1 m W。本比較例4相較於實 施例1 1，1 2，1 3下，發光指向性較差劣，驗證本發明的 有效性。 (比較例5)The devices of Examples 1 to 3 were prepared, and a wafer semiconductor light-emitting device was produced without forming a light reflection film, and the characteristics were evaluated. The directional characteristics implemented at this time were measured in the same manner as in Example 3. Because there will be light leakage from the side of the element, the directional characteristics are not good. The luminous output was measured as 5 · 1 m W using a total light amount using an integrating sphere. Compared with Example 1, 1, 12, and 13 of this comparative example 4, the directivity of light emission is worse, and the effectiveness of the present invention is verified. (Comparative example 5)
準備實施例1 3之元件，在未形成光反射膜情況下，安 裝於附帶光反射板的導線框上，並進行如同比較例4之特 性評估。評估結果如表1所示。結果雖發光指向性有較比 較例4稍加改善，但相較於實施例1 3下，對正面的聚光 度將較差劣。另，發光輸出利用採用積分球的全光量測量 爲5 .OmW。本比較例5的發光指向性並未如實施例1 1， 1 2，1 3的理想，驗證本發明的有效性。 【發明功效】 依照本發明構造的半導體發光元件，可製得發光指向性 高、高輸出、且小型的半導體發光元件。 再者，藉由採用本發明之製造方法，便可依簡單的程序， -27- 535301 五 '發明説明（26 ) 製造本發明的半導體發光元件。 利用本發明之半導體發光元件，因爲可獲得發光指向性 高且發光強度高的光源，所以可使用於長距離、高速度、 高感度的光通訊。藉由將本發明之半導體發光元件，使用 於光通訊裝置、電子裝置、光學式偵測器上，便可提供更 佳功能、高性能、小型、低耗電力、低價格的光通訊裝置 、電子裝置、光學式偵測器。 【圖式簡單說明】 第1圖係本發明半導體發光元件表示自光取出方向之平 視圖之一例。 弟2圖表不本發明半導體發光兀件之剖面圖之一·例。 第3圖表示實施例1 1之半導體發光元件的剖面圖。 第4圖表示比較例2之半導體發光元件的剖面圖。 第5圖表示實施例1 2之半導體發光元件的剖面圖。 第6圖表示比較例3之半導體發光元件的剖面圖。 【符號之說明】 1 光放出部 2 A u電極 3 阻光性物質 4 Au電極 5 p型GaAlAs透明基板層 6 p型GaAlAs覆蓋層 7 p型GaAlAs活性層 8 η型GaAlAs覆蓋層 -28- 535301 五、發明説明（27) 9 阻光性物質 10 Au電極 11 光放出部 12 AuBe合金電極 13 p型GaAs型單結晶基板 14 p型GaAlAs覆蓋層 15 GaAlAs活性層 16 η型GaAlAs覆蓋層 17 阻光性物質 18 AuGeNi合金電極 19 光放出部 20 AuBe合金電極 21 p型GaAs型單結晶基板 22 p型GaAlAs覆蓋層 23 GaAlAs活性層 24 η型GaAlAs覆蓋層 25 AuGeNi合金電極 26 光放出部 27 AuBe合金電極 28 P型透明基板層 29 p型GaAlAs覆蓋層 30 GaAlAs活性層 3 1 η型GaAlAs覆蓋層 32 阻光性物質 -29- 535301 五、發明説明（28 ) 33 AuGeNi合金電極 34 光放出部 35 AuBe合金電極 36 p透明基板層 37 p型GaAlAs覆蓋層 38 GaAlAs活性層 3 9 η型GaAlAs覆蓋層 40 AuGeNi合金電極 41 光放出部 -30The device of Example 13 was prepared, and the light-reflective film was not formed. The device was mounted on a lead frame with a light-reflecting plate, and the characteristics were evaluated as in Comparative Example 4. The evaluation results are shown in Table 1. As a result, although the directivity of light emission was slightly improved as compared with that of Example 4, compared with Example 13, the concentration of light on the front side would be inferior. In addition, the light output was measured to be 5.0 mW using a total light amount using an integrating sphere. The light emitting directivity of the comparative example 5 is not as ideal as that of the examples 1, 12, 12, 13 in Example 1, and the validity of the present invention is verified. [Effect of the invention] The semiconductor light-emitting element constructed in accordance with the present invention can produce a semiconductor light-emitting element with high light directivity, high output, and small size. Furthermore, by using the manufacturing method of the present invention, the semiconductor light-emitting element of the present invention can be manufactured according to a simple procedure. According to the semiconductor light emitting device of the present invention, since a light source having high light directivity and high light emission intensity can be obtained, it can be used for long-distance, high-speed, and high-sensitivity optical communication. By using the semiconductor light emitting device of the present invention in optical communication devices, electronic devices, and optical detectors, it is possible to provide optical communication devices, electronics, and electronic devices with better functions, high performance, small size, low power consumption, and low price. Device, optical detector. [Brief Description of the Drawings] Fig. 1 is an example of a plan view of a semiconductor light emitting device of the present invention showing a direction from which light is taken out. The second chart is an example of a cross-sectional view of the semiconductor light-emitting element of the present invention. FIG. 3 is a cross-sectional view of the semiconductor light-emitting element of Example 11. FIG. FIG. 4 is a cross-sectional view of a semiconductor light emitting device of Comparative Example 2. FIG. Fig. 5 is a cross-sectional view of the semiconductor light emitting device of Example 12; FIG. 6 is a cross-sectional view of a semiconductor light emitting element of Comparative Example 3. FIG. [Description of symbols] 1 Light emitting part 2 A u electrode 3 Light-blocking substance 4 Au electrode 5 p-type GaAlAs transparent substrate layer 6 p-type GaAlAs cover layer 7 p-type GaAlAs active layer 8 n-type GaAlAs cover layer-28- 535301 V. Description of the invention (27) 9 Light-blocking substance 10 Au electrode 11 Light emitting portion 12 AuBe alloy electrode 13 p-type GaAs single crystal substrate 14 p-type GaAlAs cover layer 15 GaAlAs active layer 16 η-type GaAlAs cover layer 17 light-blocking Properties 18 AuGeNi alloy electrode 19 Light emitting part 20 AuBe alloy electrode 21 p-type GaAs single crystal substrate 22 p-type GaAlAs coating layer 23 GaAlAs active layer 24 η-type GaAlAs coating layer 25 AuGeNi alloy electrode 26 light emitting portion 27 AuBe alloy electrode 28 P-type transparent substrate layer 29 p-type GaAlAs cover layer 30 GaAlAs active layer 3 1 n-type GaAlAs cover layer 32 light-blocking substance -29-535301 V. Description of the invention (28) 33 AuGeNi alloy electrode 34 Light emitting portion 35 AuBe alloy Electrode 36 p transparent substrate layer 37 p-type GaAlAs coating layer 38 GaAlAs active layer 3 9 n-type GaAlAs coating layer 40 AuGeNi alloy electrode 41 Light emitting portion -30