JP6343923B2 - Light emitting device - Google Patents
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- JP6343923B2 JP6343923B2 JP2013260757A JP2013260757A JP6343923B2 JP 6343923 B2 JP6343923 B2 JP 6343923B2 JP 2013260757 A JP2013260757 A JP 2013260757A JP 2013260757 A JP2013260757 A JP 2013260757A JP 6343923 B2 JP6343923 B2 JP 6343923B2
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- Led Device Packages (AREA)
Description
本発明は、発光装置に関する。 The present invention relates to a light emitting device.
従来、配線部が配置された基板に複数の発光素子が接合される発光装置が提案された（特許文献１参照）。 Conventionally, a light-emitting device in which a plurality of light-emitting elements are bonded to a substrate on which a wiring portion is arranged has been proposed (see Patent Document 1).
しかしながら、上記従来の発光装置では、配線部間において露出する基板の表面が発光素子の出射光を受けて劣化（例：変色、強度低下）し、発光装置の絶縁耐圧を低下させ得るという問題があった。 However, the conventional light emitting device has a problem in that the surface of the substrate exposed between the wiring portions receives the light emitted from the light emitting element and deteriorates (for example, discoloration, strength reduction), and can reduce the withstand voltage of the light emitting device. there were.
そこで、本発明は、配線部間において露出する基体の表面に発光素子の出射光が当たることを抑制する発光装置を提供することを目的とする。 Therefore, an object of the present invention is to provide a light emitting device that suppresses the light emitted from the light emitting element from hitting the surface of the substrate exposed between the wiring portions.
本発明によれば、上記課題は、次の手段により解決される。すなわち、樹脂を有する基体と、前記基体上に間隔をあけて配置された複数の配線部と、前記配線部間の領域を跨ぐように前記配線部に接合された発光素子と、前記配線部間の領域に設けられ前記発光素子が前記配線部に接合されている部分を覆う樹脂部と、を備えた発光装置であって、前記樹脂部は、前記発光素子の出射光を吸収する光吸収材を有することを特徴とする発光装置である。 According to the present invention, the above problem is solved by the following means. That is, a base having a resin, a plurality of wiring parts arranged on the base at intervals, a light emitting element bonded to the wiring part so as to straddle a region between the wiring parts, and the wiring part And a resin part that covers a portion where the light emitting element is bonded to the wiring part, wherein the resin part absorbs light emitted from the light emitting element. A light-emitting device characterized by comprising:
本発明によれば、基体の劣化を抑制して発光装置の絶縁耐圧を向上させることができる。 According to the present invention, it is possible to improve the withstand voltage of the light emitting device by suppressing the deterioration of the substrate.
以下に、添付した図面を参照しつつ、本発明を実施するための形態について説明する。 EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated, referring attached drawing.
図１は、本発明の実施形態に係る発光装置の模式図であり、図１（ａ）は全体図、図１（ｂ）は図１（ａ）中のＡ−Ａ部分の拡大図である。図２は、本発明の実施形態に係る発光装置の模式的端面図であり、図２（ａ）は図１（ｂ）中のＢ−Ｂ端面を示す図であり、図２（ｂ）は図１（ｂ）中のＣ−Ｃ端面を示す図である。なお、理解を容易にするため、図１（ｂ）においては、樹脂部４０に覆われている部分を破線で示している。また、理解を容易にするため、光反射層７０は、図２においてのみ図示しており、図１においては図示していない。 1A and 1B are schematic views of a light emitting device according to an embodiment of the present invention. FIG. 1A is an overall view, and FIG. 1B is an enlarged view of a portion AA in FIG. . 2 is a schematic end view of a light emitting device according to an embodiment of the present invention, FIG. 2 (a) is a view showing a BB end surface in FIG. 1 (b), and FIG. It is a figure which shows CC end surface in FIG.1 (b). In addition, in order to understand easily, in FIG.1 (b), the part covered with the resin part 40 is shown with the broken line. Further, for easy understanding, the light reflecting layer 70 is illustrated only in FIG. 2 and is not illustrated in FIG. 1.
図１、２に示すように、本発明の実施形態に係る発光装置１００は、樹脂を有する基体１０と、基体１０上に間隔をあけて配置された複数の配線部２０と、配線部２０間の領域Ｘを跨ぐように配線部２０に接合された発光素子３０と、配線部２０間の領域Ｘに設けられ発光素子３０が配線部２０に接合されている部分を覆う樹脂部４０と、を備えた発光装置であって、樹脂部４０は、発光素子３０の出射光を吸収する光吸収材を有する発光装置である。 As shown in FIGS. 1 and 2, a light emitting device 100 according to an embodiment of the present invention includes a base 10 having a resin, a plurality of wiring parts 20 arranged on the base 10 at intervals, and a distance between the wiring parts 20. A light emitting element 30 bonded to the wiring portion 20 so as to straddle the region X, and a resin portion 40 provided in the region X between the wiring portions 20 and covering a portion where the light emitting element 30 is bonded to the wiring portion 20. The resin portion 40 is a light emitting device that includes a light absorbing material that absorbs light emitted from the light emitting element 30.
以下、順に説明する。 Hereinafter, it demonstrates in order.
［基体１０］
基体１０には、例えば、ポリイミド（ＰＩ）、ポリエチレンナフタレート（ＰＥＮ）、ポリエチレンテレフタレート（ＰＥＴ）、ポリエーテルサルフォン（ＰＥＳ）などの絶縁性樹脂を用いることができる。基体１０は、樹脂を有していればよく、樹脂のみで構成されていてもよいし、例えば、細長いテープ状の銅箔やアルミニウム箔などが絶縁性樹脂などで被覆されることにより構成されていてもよい。なお、基体１０が樹脂のみで構成されている場合には、発光素子３０の出射光を受けて基体１０が劣化しやすいが、本発明の実施形態によれば、このような劣化が抑制される。
[Substrate 10]
For the substrate 10, for example, an insulating resin such as polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), or polyethersulfone (PES) can be used. The substrate 10 only needs to have a resin, and may be made of only a resin. For example, the base 10 may be formed by covering an elongated tape-like copper foil or aluminum foil with an insulating resin or the like. May be. In addition, when the base | substrate 10 is comprised only with resin, the base | substrate 10 is easy to deteriorate by receiving the emitted light of the light emitting element 30, However, According to embodiment of this invention, such deterioration is suppressed. .
基体１０には、例えば長尺部材を用いることができる。この場合、基体１０の長手方向と短手方向の長さの比は、例えば、６：１、３０：１、１００：１とすることができる。具体的には、長手方向の長さが１１５０ｍｍで、短手方向の長さが１５ｍｍの部材などは、基体１０の一例となる。 For the substrate 10, for example, a long member can be used. In this case, the ratio of the length of the substrate 10 in the longitudinal direction to the lateral direction can be, for example, 6: 1, 30: 1, or 100: 1. Specifically, a member having a length in the longitudinal direction of 1150 mm and a length in the short direction of 15 mm is an example of the base body 10.
基体１０の厚みは、例えば、１０μｍ〜１００μｍ程度とすることができる。基体１０の厚みが数十μｍ程度と薄い場合、発光素子３０の出射光は、基体１０の表層を劣化させるだけではなく、基体１０に貫通孔を形成してしまうことがあるが、本発明の実施形態によれば、このような劣化や貫通孔の形成を抑制することができる。 The thickness of the base 10 can be, for example, about 10 μm to 100 μm. When the thickness of the substrate 10 is as thin as several tens of μm, the light emitted from the light emitting element 30 not only deteriorates the surface layer of the substrate 10 but may form a through hole in the substrate 10. According to the embodiment, such deterioration and formation of through holes can be suppressed.
基体１０は、可撓性を有していてもよい。基体１０が可撓性を有する場合は、発光装置１００をロールツーロール工法で製造することができる。また、発光装置１００をリールなどによってロール状に巻き取った状態で保管することができる。また、発光装置１００を曲面に沿わせて取り付けることもできる。 The substrate 10 may have flexibility. When the base 10 has flexibility, the light emitting device 100 can be manufactured by a roll-to-roll method. Further, the light emitting device 100 can be stored in a state of being wound in a roll shape by a reel or the like. In addition, the light emitting device 100 can be attached along a curved surface.
［複数の配線部２０］
複数の配線部２０は、基体１０上に間隔をあけて配置されている。配線部２０間の領域Ｘは、基体１０の表面や接着材５０（後述）などが露出しているため、発光素子３０の出射光を受けて劣化しやすいが、本発明の実施形態によれば、このような劣化が抑制される。
[Multiple wiring units 20]
The plurality of wiring parts 20 are arranged on the base body 10 at intervals. The region X between the wiring portions 20 is easily deteriorated by receiving light emitted from the light emitting element 30 because the surface of the base 10 and the adhesive 50 (described later) are exposed, but according to the embodiment of the present invention. Such deterioration is suppressed.
配線部２０には、例えば銅やアルミニウムなどの金属または合金の単層または積層構造の導電性薄膜を用いることができる。 For the wiring part 20, for example, a conductive thin film of a single layer or a laminated structure of a metal or an alloy such as copper or aluminum can be used.
配線部２０の厚みは、例えば８μｍ〜２００μｍとすることができる。この程度の厚みであれば、基体１０が可撓性を有する場合において、基体１０の可撓性を損なわない。 The thickness of the wiring part 20 can be 8 micrometers-200 micrometers, for example. With such a thickness, the flexibility of the substrate 10 is not impaired when the substrate 10 has flexibility.
配線部２０は、その平面視における角に丸みを帯びていてもよい。このようにすれば、配線部２０の接着性（耐剥離性）を向上させて信頼性を高めることができる。角の曲率半径は、例えば、半径１００μｍ以上とすることができる。 The wiring part 20 may have rounded corners in plan view. If it does in this way, the adhesiveness (peeling-proof property) of the wiring part 20 can be improved, and reliability can be improved. The radius of curvature of the corner can be set to a radius of 100 μm or more, for example.
配線部２０は、基体１０の表面上においてできるだけ広い面積で設けてもよい。このようにすれば、配線部２０から熱が効率的に放熱されるため、発光装置１００の放熱性を高めることができる。 The wiring part 20 may be provided in the widest possible area on the surface of the substrate 10. In this way, heat is efficiently radiated from the wiring part 20, so that the heat dissipation of the light emitting device 100 can be improved.
配線部２０は、接着材５０を介して基体１０に配置されていてもよい。接着材５０には、例えばエポキシ系、イミド系、アミド系、アクリル系、シリコーン系などの樹脂を用いることができる。接着材５０の厚みは、例えば１μｍ〜５０μｍとすることができる。 The wiring part 20 may be disposed on the base body 10 via the adhesive 50. For the adhesive 50, for example, an epoxy resin, an imide resin, an amide resin, an acrylic resin, a silicone resin, or the like can be used. The thickness of the adhesive material 50 can be set to 1 μm to 50 μm, for example.
接着材５０は、配線部２０が配置されている領域のみならず、配線部２０間の領域Ｘにも形成することができる。この場合、接着材５０は、発光素子３０の出射光を吸収する光吸収材を有していてもよい。このようにすれば、基体１０の劣化がより抑制される。 The adhesive 50 can be formed not only in the region where the wiring part 20 is disposed, but also in the region X between the wiring parts 20. In this case, the adhesive material 50 may have a light absorbing material that absorbs light emitted from the light emitting element 30. In this way, the deterioration of the base 10 is further suppressed.
配線部２０は、外部配線（外部電源と接続される配線）に接続される端子部としても機能する。端子部は、例えば、基体１０の主面側の端部に形成することができる。外部配線は、基体１０上に設けられる公知のコネクタなどに接続されていてもよい。 The wiring unit 20 also functions as a terminal unit connected to external wiring (wiring connected to an external power source). A terminal part can be formed in the edge part by the side of the main surface of base 10, for example. The external wiring may be connected to a known connector provided on the base 10.
複数の配線部２０は、例えば、基体１０の長手方向及び／又は短手方向に並べることができる。また、配線部２０の平面形状は、基体１０のサイズや必要な発光素子３０の数などに応じて適宜変更することができる。 The plurality of wiring parts 20 can be arranged in the longitudinal direction and / or the lateral direction of the base body 10, for example. Further, the planar shape of the wiring part 20 can be appropriately changed according to the size of the base 10 and the number of necessary light emitting elements 30.
配線部２０間の領域Ｘは、配線部２０が厚みを有しているため、例えば溝状となる。この場合、溝の幅は、例えば配線部２０の幅より狭く、具体的には、例えば０．０５ｍｍ〜５ｍｍ程度とすることができる。 The region X between the wiring portions 20 has, for example, a groove shape because the wiring portion 20 has a thickness. In this case, the width of the groove is narrower than the width of the wiring portion 20, for example, and can be specifically set to about 0.05 mm to 5 mm, for example.
配線部２０間の領域Ｘの平面形状は、例えば、直線状、曲線状、波線状、それらが組み合わされた形状などとすることができる。 The planar shape of the region X between the wiring parts 20 can be, for example, a straight line shape, a curved line shape, a wavy line shape, a shape in which they are combined, or the like.
［複数の発光素子３０］
複数の発光素子３０は、配線部２０間の領域Ｘを跨ぐように配線部２０に接合されている。すなわち、配線部２０間の領域Ｘにより離間されている一方の配線部２０と他方の配線部２０とに正負の電極がそれぞれ接続される。１つの配線部２０間の領域Ｘを１つの発光素子３０が跨いでいてもよいし、１つの配線部２０間の領域Ｘを２つ以上の発光素子３０が跨いでいてもよい。
[Multiple Light Emitting Elements 30]
The plurality of light emitting elements 30 are joined to the wiring part 20 so as to straddle the region X between the wiring parts 20. That is, positive and negative electrodes are connected to one wiring part 20 and the other wiring part 20 which are separated by the region X between the wiring parts 20. One light emitting element 30 may straddle the region X between one wiring part 20, or two or more light emitting elements 30 may straddle the region X between one wiring part 20.
複数の発光素子３０は、直列、並列、直並列、並直列などの任意の接続方法で、互いに電気的に接続することができる。 The plurality of light emitting elements 30 can be electrically connected to each other by any connection method such as series, parallel, series-parallel, and parallel-series.
発光素子３０は、ワイヤボンディングのようにワイヤによって接続する方法やフリップチップ実装などにより配線部２０に接合することができる。フリップチップ実装により接合される場合、発光素子３０は、接合部材６０を介して配線部２０に接続される。接合部材６０には、Ｓｎ−Ａｇ−Ｃｕ系やＡｕ−Ｓｎ系、Ｓｎ−Ｃｕ系などの半田やＡｕなどの金属、異方性導電ペースト、Ａｇペーストなどを用いることができる。なお、ダイボンディングにより配線部２０に接合する場合、ダイボンディングに用いるダイボンド材は、発光素子３０の出射光を吸収する光吸収材を有していてもよい。このようにすれば、基体１０の劣化がより抑制される。 The light emitting element 30 can be joined to the wiring part 20 by a method of connecting by a wire such as wire bonding or flip chip mounting. In the case of bonding by flip chip mounting, the light emitting element 30 is connected to the wiring unit 20 via the bonding member 60. For the joining member 60, Sn-Ag-Cu-based, Au-Sn-based, Sn-Cu-based solder, metal such as Au, anisotropic conductive paste, Ag paste, or the like can be used. In addition, when joining to the wiring part 20 by die bonding, the die-bonding material used for die-bonding may have the light absorption material which absorbs the emitted light of the light emitting element 30. FIG. In this way, the deterioration of the base 10 is further suppressed.
発光素子３０には、その出射光が５００ｎｍ以下の波長を有するものを用いることができる。ポリイミド（ＰＩ）、ポリエチレンナフタレート（ＰＥＮ）、ポリエチレンテレフタレート（ＰＥＴ）、ポリエーテルサルフォン（ＰＥＳ）などの樹脂は、当該波長の光が当たると劣化しやすいが、本発明の実施形態によれば、これらの樹脂を有する基体１０の劣化を抑制することができる。 As the light emitting element 30, an element whose emitted light has a wavelength of 500 nm or less can be used. Resins such as polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and polyethersulfone (PES) are likely to deteriorate when exposed to light of the wavelength, but according to the embodiment of the present invention, Deterioration of the substrate 10 having these resins can be suppressed.
発光素子３０は、例えば、半導体構造と、ｐ側電極と、ｎ側電極と、絶縁材料層と、を有している。半導体構造は、例えば、透光性を有するサファイア基板上に順次積層されたｎ型層、活性層、及びｐ型層を有している。ｎ型層、活性層、及びｐ型層は、例えば窒化ガリウム系半導体によって構成することができる。 The light emitting element 30 has, for example, a semiconductor structure, a p-side electrode, an n-side electrode, and an insulating material layer. The semiconductor structure has, for example, an n-type layer, an active layer, and a p-type layer sequentially stacked on a light-transmitting sapphire substrate. The n-type layer, the active layer, and the p-type layer can be composed of, for example, a gallium nitride based semiconductor.
発光素子３０には、直接的にまたは間接的に波長変換部材を設けることができる。例えば、発光素子３０の表面に電着法やスプレー塗布によって任意の波長の光を発する波長変換部材を形成してもよいし、後述するように樹脂部４０や封止部材８０に波長変換部材を含有させてもよい。 The light emitting element 30 can be provided with a wavelength conversion member directly or indirectly. For example, a wavelength conversion member that emits light of an arbitrary wavelength may be formed on the surface of the light emitting element 30 by electrodeposition or spray coating, or a wavelength conversion member may be provided on the resin portion 40 or the sealing member 80 as described later. You may make it contain.
［樹脂部４０］
樹脂部４０は、配線部２０間の領域Ｘに設けられ発光素子３０が配線部２０に接合されている部分を覆っている。樹脂部４０は、例えば、発光素子３０と基体１０との間に充填される樹脂材料（アンダーフィル材料）などにより構成することができる。
[Resin part 40]
The resin portion 40 is provided in a region X between the wiring portions 20 and covers a portion where the light emitting element 30 is joined to the wiring portion 20. The resin part 40 can be comprised by the resin material (underfill material) etc. which are filled between the light emitting element 30 and the base | substrate 10, for example.
樹脂部４０には、例えばシリコーン樹脂やエポキシ樹脂、フッ素樹脂、及びこれらの樹脂を少なくとも１種以上含むハイブリッド樹脂などを用いることができる。 For the resin portion 40, for example, a silicone resin, an epoxy resin, a fluororesin, and a hybrid resin including at least one of these resins can be used.
樹脂部４０は、発光素子３０が配線部２０に接合されている部分を覆っていればよく、発光素子３０の側面（発光素子３０の活性層の側面）を覆っている必要はない。樹脂部４０が発光素子３０の側面（発光素子３０の活性層の側面）を覆っていない場合は、基体１０の反対側へより多くの光が取り出せるため、発光素子３０の出射光が基体１０に当たることを抑制することができる。なお、発光素子３０の側面に撥水剤（撥油剤）を塗ってから樹脂部４０を設ければ、樹脂部４０が発光素子３０の側面（発光素子３０の活性層の側面）を覆わない形状を比較的容易に形成することができる。 The resin part 40 only needs to cover the portion where the light emitting element 30 is bonded to the wiring part 20, and does not need to cover the side surface of the light emitting element 30 (side surface of the active layer of the light emitting element 30). When the resin portion 40 does not cover the side surface of the light emitting element 30 (the side surface of the active layer of the light emitting element 30), more light can be extracted to the opposite side of the base body 10, and thus the emitted light from the light emitting element 30 strikes the base body 10. This can be suppressed. In addition, if the resin part 40 is provided after applying a water repellent (oil repellent) to the side surface of the light emitting element 30, the resin part 40 does not cover the side surface of the light emitting element 30 (the side surface of the active layer of the light emitting element 30). Can be formed relatively easily.
（光吸収材）
樹脂部４０は、発光素子３０の出射光を吸収する光吸収材を有している。これにより、基体１０に向かう発光素子３０の出射光が樹脂部４０により吸収され、発光素子３０の出射光が基体１０に当たることを抑制することができる。
(Light absorber)
The resin part 40 has a light absorbing material that absorbs the light emitted from the light emitting element 30. Thereby, the light emitted from the light emitting element 30 toward the base 10 is absorbed by the resin portion 40, and the light emitted from the light emitting element 30 can be prevented from hitting the base 10.
光吸収材を有する樹脂部４０の吸収係数は、例えば、５００（ｃｍ−１）以上である。この場合は、厚みが１０ｕｍの樹脂部４０に入射した光のうち６１％が樹脂部４０を透過する。 The absorption coefficient of the resin part 40 which has a light absorption material is 500 (cm <-1 >) or more, for example. In this case, 61% of the light incident on the resin portion 40 having a thickness of 10 μm passes through the resin portion 40.
光吸収材は、樹脂部４０において例えば均一分散されている。発光素子３０の出射光が光吸収材に当たる確率は高くなるため、発光素子３０の出射光が基体１０に当たることを抑制することができる。あるいは、基体１０に当たる発光素子３０の出射光の光量を維持しつつ、光吸収材の使用量を減らすことができる。光吸収材にカーボンブラックなどの電気導電性を有する部材を用いる場合には、その使用量を少なくすることで発光装置１００の絶縁耐圧をより向上させることができる。また、光吸収材としては、金属部材以外のものを用いることが好ましい。 For example, the light absorbing material is uniformly dispersed in the resin portion 40. Since there is a high probability that the light emitted from the light emitting element 30 will hit the light absorbing material, it is possible to suppress the light emitted from the light emitting element 30 from hitting the substrate 10. Or the usage-amount of a light absorber can be reduced, maintaining the light quantity of the emitted light of the light emitting element 30 which strikes the base | substrate 10. FIG. In the case where a member having electrical conductivity such as carbon black is used for the light absorbing material, the withstand voltage of the light emitting device 100 can be further improved by reducing the amount used. In addition, it is preferable to use a light absorbing material other than a metal member.
光吸収材には、例えば、カーボンブラック、顔料、染料などを用いることができる。また、光吸収材の形状は、例えば球形、鱗片、針状などである。また、光吸収材の粒径や長さなどは、例えば１ｎｍ〜５０μｍ程度である。 As the light absorbing material, for example, carbon black, a pigment, a dye, or the like can be used. The shape of the light absorbing material is, for example, a sphere, a scale, or a needle. Moreover, the particle size, length, etc. of a light absorption material are 1 nm-about 50 micrometers, for example.
（光反射材）
樹脂部４０は、さらに、発光素子３０の出射光を反射する光反射材を有していてもよい。このようにすれば、光反射材により発光素子３０の出射光を拡散させて、発光素子３０の出射光の光路長が長くなるため、発光素子３０の出射光が光吸収材に当たる確率が高くなり、発光素子３０の出射光が基体１０に当たることを抑制することができる。あるいは、基体１０に当たる発光素子３０の出射光の光量を維持しつつ、光吸収材の使用量を減らすことができる。光吸収材にカーボンブラックなどの電気導電性を有する部材を用いる場合には、その使用量を少なくすることで発光装置１００の絶縁耐圧をより向上させることができる。
(Light reflecting material)
The resin portion 40 may further include a light reflecting material that reflects the light emitted from the light emitting element 30. In this way, the light emitted from the light emitting element 30 is diffused by the light reflecting material, and the optical path length of the light emitted from the light emitting element 30 is increased. The light emitted from the light emitting element 30 can be prevented from hitting the base 10. Or the usage-amount of a light absorber can be reduced, maintaining the light quantity of the emitted light of the light emitting element 30 which strikes the base | substrate 10. FIG. In the case where a member having electrical conductivity such as carbon black is used for the light absorbing material, the withstand voltage of the light emitting device 100 can be further improved by reducing the amount used.
光反射材は、例えば、基体１０側により少なく設けることができる。このようにすれば基体１０側へ漏れる光量を抑制しつつ、光取り出し面側への光量をより多くすることが出来る。 For example, fewer light reflecting materials can be provided on the base 10 side. In this way, it is possible to increase the amount of light to the light extraction surface side while suppressing the amount of light leaking to the base 10 side.
光反射材には、例えば、樹脂部４０との屈折率差による拡散反射作用のあるものを用いることができる。具体的には、ＳｉＯ２、ＴｉＯ２、Ａｌ２Ｏ３、ＺｒＯ２、ＭｇＯ、ＢａＳＯ４などの白色フィラーやサブミクロンオーダーの気孔などを用いることができる。また、干渉や金属膜を利用したミラー材料なども光反射材として用いることができる。 As the light reflecting material, for example, a material having a diffuse reflection effect due to a difference in refractive index with the resin portion 40 can be used. Specifically, white fillers such as SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 , MgO, BaSO 4, submicron order pores, and the like can be used. Further, a mirror material using interference or a metal film can also be used as the light reflecting material.
（波長変換材）
樹脂部４０は、さらに、発光素子３０の発光波長を基体１０が劣化しにくい波長に変換する波長変換材を有していてもよい。このようにすれば、劣化しやすい波長の光が基体１０に当たることを抑制することができる。あるいは、基体１０に当たる発光素子３０の出射光の光量を維持しつつ、光吸収材の使用量を減らすことができる。光吸収材にカーボンブラックなどの電気導電性を有する部材を用いる場合には、その使用量を少なくすることで発光装置１００の絶縁耐圧をより向上させることができる。
(Wavelength conversion material)
The resin portion 40 may further include a wavelength conversion material that converts the emission wavelength of the light emitting element 30 to a wavelength at which the substrate 10 is difficult to deteriorate. If it does in this way, it can control that light of a wavelength which is easy to deteriorate hits substrate 10. Or the usage-amount of a light absorber can be reduced, maintaining the light quantity of the emitted light of the light emitting element 30 which strikes the base | substrate 10. FIG. In the case where a member having electrical conductivity such as carbon black is used for the light absorbing material, the withstand voltage of the light emitting device 100 can be further improved by reducing the amount used.
波長変換材としては、例えば酸化物系蛍光体、窒化物系蛍光体、硫化物系蛍光体、フッ化物系蛍光体などを用いることができる。 As the wavelength conversion material, for example, an oxide phosphor, a nitride phosphor, a sulfide phosphor, a fluoride phosphor, or the like can be used.
以上説明した本発明の実施形態に係る発光装置１００によれば、発光素子３０が配線部２０に接合されている部分を覆う樹脂部４０が配線部２０間の領域Ｘに設けられ、この樹脂部４０が光吸収材を有するものとされる。このため、配線部２０間において露出する基体１０の表面に発光素子３０の出射光が当たることを抑制することができる。したがって、本発明の実施形態に係る発光装置１００によれば、基体１０の劣化を抑制して発光装置１００の絶縁耐圧を向上させることができる。 According to the light emitting device 100 according to the embodiment of the present invention described above, the resin portion 40 that covers the portion where the light emitting element 30 is joined to the wiring portion 20 is provided in the region X between the wiring portions 20, and this resin portion. 40 has a light absorbing material. For this reason, it can suppress that the emitted light of the light emitting element 30 hits the surface of the base | substrate 10 exposed between the wiring parts 20. FIG. Therefore, according to the light emitting device 100 according to the embodiment of the present invention, the breakdown voltage of the light emitting device 100 can be improved while suppressing the deterioration of the base 10.
なお、本発明の実施形態に係る発光装置１００は、さらに、光反射層７０や封止部材８０などを備えていてもよい。 Note that the light emitting device 100 according to the embodiment of the present invention may further include a light reflecting layer 70, a sealing member 80, and the like.
［光反射層７０］
光反射層７０は、基体１０や配線部２０を覆うように設けられている。光反射層７０は、基体１０表面の略全面を覆っているが、発光素子３０が配置される領域Ｘには、配線部２０の一部と配線部２０間の領域Ｘの一部とが露出するように開口Ｙが形成される。
[Light reflecting layer 70]
The light reflecting layer 70 is provided so as to cover the base 10 and the wiring part 20. The light reflecting layer 70 covers substantially the entire surface of the substrate 10, but a part of the wiring part 20 and a part of the area X between the wiring parts 20 are exposed in the region X in which the light emitting element 30 is disposed. Thus, an opening Y is formed.
光反射層７０には、発光素子３０の出射光や波長変換部材により波長変換された光を反射する材料を用いることができる。このような材料としては、例えば、シリコーン系樹脂に酸化チタンを含有させた白レジストと呼ばれる絶縁性の白色インクを一例として挙げることができる。 The light reflecting layer 70 can be made of a material that reflects light emitted from the light emitting element 30 or light that has been wavelength-converted by the wavelength conversion member. An example of such a material is an insulating white ink called a white resist in which titanium oxide is contained in a silicone resin.
［封止部材８０］
封止部材８０は、発光素子３０を封止している。１つの封止部材８０が１つの発光素子３０を封止していてもよいし、１つの封止部材８０が２つ以上の発光素子３０を封止していてもよい。
[Sealing member 80]
The sealing member 80 seals the light emitting element 30. One sealing member 80 may seal one light emitting element 30, or one sealing member 80 may seal two or more light emitting elements 30.
封止部材８０には、透光性樹脂（例えば、エポキシ樹脂、ユリア樹脂、シリコーン樹脂など）や透光性のガラスなどを用いることができる。 For the sealing member 80, a light-transmitting resin (for example, epoxy resin, urea resin, silicone resin, or the like), light-transmitting glass, or the like can be used.
封止部材８０は、光散乱材（硫酸バリウム、酸化チタン、酸化アルミニウム、酸化珪素など）を有していてもよい。 The sealing member 80 may have a light scattering material (barium sulfate, titanium oxide, aluminum oxide, silicon oxide, etc.).
封止部材８０は、発光素子３０の出射光を吸収して異なる波長の光を出す波長変換部材を有していてもよい。このようにすれば、所望の発光色の発光装置１００を得ることができる。波長変換部材は、封止部材８０の内部に含有されていてもよいし、封止部材８０の表面にのみ設けられていてもよい。封止部材８０の表面にのみ設けられる場合はスプレー塗布などの方法で封止部材８０の表面に波長変換層を形成することができる。また、発光素子３０の近傍に波長変換材を含有した層を設け、その層を覆うように２層目の層を形成するなどし、封止部材８０を複数層として形成してもよい。 The sealing member 80 may include a wavelength conversion member that absorbs light emitted from the light emitting element 30 and emits light having different wavelengths. In this way, the light emitting device 100 having a desired emission color can be obtained. The wavelength conversion member may be contained inside the sealing member 80, or may be provided only on the surface of the sealing member 80. When provided only on the surface of the sealing member 80, the wavelength conversion layer can be formed on the surface of the sealing member 80 by a method such as spray coating. Further, the sealing member 80 may be formed as a plurality of layers by providing a layer containing a wavelength conversion material in the vicinity of the light emitting element 30 and forming a second layer so as to cover the layer.
封止部材８０が有する波長変換部材としては、例えば、酸化物系、硫化物系、フッ化物系、或いは窒化物系の蛍光体などを一例として挙げることができる。 Examples of the wavelength conversion member included in the sealing member 80 include oxide-based, sulfide-based, fluoride-based, and nitride-based phosphors.
例えば、発光素子３０に青色発光する窒化ガリウム系発光素子３０を用いる場合には、青色光を吸収して黄色〜緑色発光するＹＡＧ系またはＬＡＧ系の蛍光体や、緑色発光するＳｉＡｌＯＮ系、クロロシリケート系、βサイアロン系の蛍光体や赤色発光するＳＣＡＳＮ系、ＣＡＳＮ系またはＫＳＦ系の蛍光体を、単独又は組み合わせて波長変換部材として用いることができる。このようにすれば、白色光を発光する発光装置１００を得ることができる。 For example, when a gallium nitride-based light emitting device 30 that emits blue light is used as the light emitting device 30, a YAG-based or LAG-based phosphor that absorbs blue light and emits yellow to green light, or a SiAlON-based, chlorosilicate that emits green light. , Β-sialon-based phosphors, SCASN-based, CASN-based, or KSF-based phosphors emitting red light can be used alone or in combination as a wavelength conversion member. In this way, the light emitting device 100 that emits white light can be obtained.
また、液晶ディスプレイやテレビのバックライト等の表示装置に用いる発光装置１００では、ＳｉＡｌＯＮ系蛍光体、クロロシリケート系またはβサイアロン系とＳＣＡＳＮ蛍光体またはＫＳＦ系蛍光体を組み合わせて波長変換部材として用いることができる。このようにすれば、色再現性の高い表示装置を得ることができる。 In the light emitting device 100 used for a display device such as a liquid crystal display or a backlight of a television, a combination of SiAlON phosphor, chlorosilicate or β sialon and SCASN phosphor or KSF phosphor is used as a wavelength conversion member. Can do. In this way, a display device with high color reproducibility can be obtained.
また、照明用途に用いる発光装置１００では、ＹＡＧ系またはＬＡＧ系の蛍光体とＳＣＡＳＮ系またはＣＡＳＮ系の蛍光体を組み合わせて波長変換部材として用いることができる。このようにすれば、演色性の高い照明装置を得ることができる。 In the light emitting device 100 used for illumination, a YAG or LAG phosphor and a SCASN or CASN phosphor can be used in combination as a wavelength conversion member. In this way, an illumination device with high color rendering properties can be obtained.
なお、波長変換部材は、発光装置１００の外部、例えば発光装置１００が発光源として用いられる表示装置や照明装置に設けることもできる。例えば、封止部材８０に波長変換部材を含めることなく、または封止部材８０に波長変換材に含めつつ、封止部材８０を透過して出射された光を波長変換する波長変換部材を表示装置や照明装置に別途設けることもできる。このような別途設けられた波長変換部材としては、例えば、発光装置１００全体の上部を覆うように配置されたシート状や板状のものを一例として挙げることができる。 The wavelength conversion member can also be provided outside the light emitting device 100, for example, in a display device or a lighting device in which the light emitting device 100 is used as a light source. For example, the wavelength conversion member that converts the wavelength of light transmitted through the sealing member 80 without including the wavelength conversion member in the sealing member 80 or included in the wavelength conversion material in the sealing member 80 is a display device. It can also be provided separately in the lighting device. As such a separately provided wavelength conversion member, for example, a sheet-like or plate-like member arranged so as to cover the upper part of the entire light emitting device 100 can be cited as an example.
基体１０には２５μｍ厚みのポリイミドシートを、配線部２０には３５μｍ厚のＣｕを用い、基体１０と配線部２０とを接着材５０で接着する。接着材５０には熱硬化性のエポキシ系接着材５０を用いた。接着材５０の厚みは、約１０μｍとした。 A polyimide sheet having a thickness of 25 μm is used for the base 10 and Cu having a thickness of 35 μm is used for the wiring part 20, and the base 10 and the wiring part 20 are bonded together with an adhesive 50. As the adhesive 50, a thermosetting epoxy adhesive 50 was used. The thickness of the adhesive 50 was about 10 μm.
基体１０に平面視が６００μｍ角の発光素子３０（λｄ＝４５０ｎｍ）を接合部材６０としてＳｎＣｕ半田を使用してフリップチップ実装し、シリコーン樹脂に平均粒径０．２５μｍの酸化チタンを３０ｗｔ％練り込んだアンダーフィル材料を樹脂部４０として発光素子３０の周りに塗布する。樹脂部４０には、カーボンブラックを１ｗｔ％含有させた。その後、封止部材８０としてシリコーン樹脂をドーム状に成型した。 A light-emitting element 30 (λd = 450 nm) having a 600 μm square in plan view is flip-chip mounted on the substrate 10 using SnCu solder as a bonding member 60, and 30 wt% of titanium oxide having an average particle diameter of 0.25 μm is kneaded into the silicone resin. The underfill material is applied around the light emitting element 30 as the resin portion 40. The resin part 40 contained 1 wt% of carbon black. Thereafter, a silicone resin was molded into a dome shape as the sealing member 80.
このようにして形成した発光装置１００では、発光素子３０の出射光が基体１０に当たることが抑制されており、基体１０の裏側への光漏れも少ない。なお、ポリイミドは、これに含まれるイミド基中のＣ−Ｎ結合部の分解波長が４４８．９ｎｍであるため、出射光が４５０ｎｍ付近の波長を有する発光素子３０を用いる場合に劣化分解し、基体１０に穴があき絶縁耐圧が低下するが、本実施例によれば、上記のとおり、この劣化が効果的に抑制され絶縁耐圧を確保することが出来る。 In the light-emitting device 100 formed in this way, the light emitted from the light-emitting element 30 is prevented from hitting the base 10 and light leakage to the back side of the base 10 is small. In addition, since the decomposition wavelength of the C—N bond portion in the imide group contained in the polyimide is 448.9 nm, the polyimide is degraded and decomposed when the light emitting element 30 having the emitted light having a wavelength near 450 nm is used. However, according to the present embodiment, as described above, this deterioration is effectively suppressed and the withstand voltage can be secured.
以上、本発明の実施形態及び実施例について説明したが、これらの説明は、本発明の一例に関するものであり、本発明は、これらの説明によって何ら限定されるものではない。 As mentioned above, although embodiment and the Example of this invention were described, these description is related to an example of this invention, and this invention is not limited at all by these description.
１００ 発光装置
１０ 基体
２０ 配線部
３０ 発光素子
４０ 樹脂部
５０ 接着材
６０ 接合部材
７０ 光反射層
８０ 封止部材
Ｘ 配線部間の領域
Ｙ 開口
DESCRIPTION OF SYMBOLS 100 Light-emitting device 10 Base | substrate 20 Wiring part 30 Light emitting element 40 Resin part 50 Adhesive material 60 Joining member 70 Light reflection layer 80 Sealing member X Area | region Y between wiring parts Opening
Claims (4)
前記樹脂部は、前記発光素子の出射光を吸収する光吸収材と、前記発光素子の出射光を反射する光反射材と、を有するとともに、前記発光素子の側面を覆い、
前記光吸収材は、カーボンブラックであることを特徴とする発光装置。 A base having a resin; a plurality of wiring portions arranged on the base at intervals; a light emitting element bonded to the wiring portion so as to straddle a region between the wiring portions; and a region between the wiring portions And a resin part that covers a portion where the light emitting element is bonded to the wiring part,
The resin portion has a light-absorbing material that absorbs the light emitted from the light emitting element, a light-reflecting material that reflects the light emitted from the light emitting element, as well as have a cover the sides of the light emitting element,
The light- emitting device , wherein the light absorbing material is carbon black .
前記発光素子の出射光は、少なくとも５００ｎｍ以下の波長を有することを特徴とする請求項１または２に記載の発光装置。 The substrate has at least one of polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and polyethersulfone (PES).
The light emitting device according to claim 1 or 2, wherein the light emitted from the light emitting element has a wavelength of at least 500 nm.
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