TW521171B - Liquid crystal display having electrodes for generating electric fields in a signal substrate - Google Patents
Liquid crystal display having electrodes for generating electric fields in a signal substrate Download PDFInfo
- Publication number
- TW521171B TW521171B TW087119940A TW87119940A TW521171B TW 521171 B TW521171 B TW 521171B TW 087119940 A TW087119940 A TW 087119940A TW 87119940 A TW87119940 A TW 87119940A TW 521171 B TW521171 B TW 521171B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- data
- line
- data line
- liquid crystal
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 title abstract description 23
- 230000005684 electric field Effects 0.000 title description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011733 molybdenum Substances 0.000 claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 239000011651 chromium Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 53
- 238000009413 insulation Methods 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 10
- 241000206607 Porphyra umbilicalis Species 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 241000254032 Acrididae Species 0.000 description 1
- 229910000656 Lu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 244000144985 peep Species 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
Description
521171 五、發明說明(1) 發明之背景 (a )發明之領域 本發明係關於液晶顯示器(LCD ),更特別者係關於具有 電極陣列以供於信號基材中產生電場之LCD。 : (b )相關技藝之敘述 具有電極陣列以供產生平行於兩基材之電場之液晶顯不 器(IPS-模式:平面式開關模式)被描述於美國註冊專利編 號5, 5 9 8, 2 8 5。然而,此IPS -模式LCD具有多項問題點。 第一個問題係.兩電極,共同電極與利闬以產生電場之圖素 電極,之間的高度差,而引起排列層之不均勻磨擦配向, 結果造成漏光損失。 第二個問題係介於施加數據信號·於圖素電極之數據線, 與在區域中介於彼等間之共同電極間之電壓差可能引起某 些漏光損失且漏光損失亦引起側面串音現象(lateral cross talk) 〇 為防止任何漏光損失,沿著一圖素區域周邊之黑紋矩障 之寬度可被加寬,或介於共同電極與數據線間之間隔可被 變窄。然而,當黑紋矩陣加寬時LCD之開口率會降低,而 當介於共同電極與數據線間之間隔變得較小時共同電極與 數據線可能容易短路。 第三個問題係其通常係由鋁或具有低阻抗之鋁合金所製 得之連接至信號線之襯墊,因為當鋁或鋁合金露出時容易 被氧化而使接觸特性不良。 發明之概要
521171 五、發明說明(2) 由於上述之故,本發明之目的係防止LCD中之任何漏光 損失。 本發明之另一目的係減少信號線之斷線且防止介於數據 線與共同電極間之短路。 ^ / 本發明之另一目的係之增加LCD之開口率及改良襯墊之 接觸特性。 此等根據本發明之諸目的、特色與優點,藉製得具有雙 層結構之數據線,與藉將一層數據線重疊於鄰接至數據線 之共同電極,而獲實現。 數據線可包含由與圖素電極之相同層所製得之下層,與 於製程中不易破壞之形成襯墊材料之上層。 為提供此等與其他目的、特色與優點,於根據本發明之 I P S -模式L C D基钟中,提供了形成於透明絕緣基#上之閘 極線與共同電極之陣列,與覆蓋住閘極線和共同電極之第 一絕緣層。第一與第二數據線形成於第一絕緣層上。第一 與第二數據線相互重疊並經由在介於第一與第二數據線間 之第二絕緣層内形成之第一接觸孔相互彼此連接。第一與 第二數據線貫穿閘極線。多個平行線於共同電極之圖素電 極被形成於第一與第二絕緣層上。鄰接於第一與第二數據 線之共同電極,經由第一與第二絕緣層重疊於第一或第二 數據線之上,且圖素電極可連接至第一或第二數據線。另 外,分別連接至第一與第二數據線之第一與第二數據襯 墊,經由形成於第二絕緣層内之第二接觸孔彼此相互連 接,且輔助閘極襯墊,經由形成於第一絕緣層内之第三接
521171 五、發明說明(3) 觸孔被連接至與閘極線連接之閘極襯墊。 第一或第二數據線和與其鄰接之共同電極彼此重疊,陧 斷通過其所在區域之光,且以黑紋矩陣替代。 另外,介於第一或第二數據線與共同電極間之短/路,因 為第一與第二絕緣層介入於共同電極與第一與第二數據線· 之間而被減少。數據線之斷線則由於其雙層結構而詖減 少 0
在第一與第二數據襯墊,閘極襯墊,輔助閘極襯墊中之 上一層可由其在製程中不易被破壞之諸如鉻、鉬、鉬合金 或氧化銦錫(ITO)之襯墊材料製成。 圖示之簡易敘述 圖1係根據本發明之第一具體實例之IPS-模式LCD之基材 之配置圖示。 圖2顯示在圖1中沿著線I I - I I之基材之剖面圖例說明。 圖3顯示在圖1中沿著線Π I - I I I之基材之剖面圖例說 明。 圖4顯示在圖1中沿著線I V - I V之基材之剖面圖例說明。 圖5顯示在圖1中沿著線V- V之基材之剖面圖例說明。 圖6舉例說明根據本發明之第二具體實例之I PS-模式LCD 之基材之自己置圖不。 圖7顯示在圖6中沿著線V I I -V I I之基材之剖面圖例說 明。 圖8舉例說明根據本發明之第三具體實例之I PS-模式LCD 之基材之配置圖示。
第9頁 521171 五、發明說明(4) 圖9顯示在圖8中沿著線I X - I X之基材之剖面圖例說明。 較佳具體實例之詳細敘述 本發明將在本文件内參考本發明所示之較佳具體實例隨 附之圖示更完整地予以描述。然而本發明可以不同形式涵 蓋且將不會被在本文中所提出具體實例之解釋所限制。更 正確地說,此等具體實例被提出乃因本發明可被完全並完 整地將表達本發明之範圍至彼等熟練此方面技藝者。於諸 圖示中,為清晰楚故,諸層與諸區域之厚度被予以放大。
圖1係根據本發明之第一具體實例之LCD基材之配置圖 示。 圖2、3、4與5係各自沿著圖1中線I I - I I、I I I - I I I、 IV- IV及V-V之基材之剖面圖例說明。 如圖1 5所示。
包含橫向閘極線20、為閘極線20之一部份之閘極電極21 與連接至閘極線2 0之閘極襯墊2 2之閘極導線其2 0被形成於 基材1 0 0之上。包含一對平行於閘極線2 0 0之共同信號線 1 0與均連接至共同信號線1 0之多個線性共同電極1 1與12之 共同信號導線亦彤成於基材1 0 0之上。共同電極1 1與1 2朝 縱向廷伸且彼此相隔相互平行。問極導線2 0、2 1與2 2與共 同信號導線1 0、11與1 2係可由諸如絡、铭、I呂合金、紹或 麵合金之早層結模之導電材料,或包含兩層由送自以上所 述導電材料製得之雙層結構材料所製得。 閘極絕缘層3 0覆蓋住閘極導線2 0、2 1與2 2及共同信號導 線1 0、1 1及1 2且具有接觸孔7 2以暴露出閘極襯墊2 2。
第10頁 521171 五、發明說明(5) 由諸如氫化非晶質矽(a-si :H)之半導體製得之通道層4〇 與由两N型不純物接雜之氫化非晶質石夕層製得之歐姆接觸 層51與52循序地形成於與閘極電極21對向之閘極絕緣3〇之 上。該等歐姆接觸層之部分51及52係與閘電極21互·,相對 向。 第一數據線6 0形成於閘極絕緣層3 〇上且於縱方向延伸, 而在閘極絕緣層30上之數據襯墊63被連接至第一數據線 6 0 ° 連接至第一數據線60之U形源極電極61與沒極電極μ 分別形成於歐姆接觸層5丨與^部份之上。汲極電極62被連 接至圖素導線6 5且包含一對圖素信號線部份平行於共同信 號線1 0,而多個圖素電極部份係平行於共同電極n且彼此 相互隔離。 第一數據圖案6 0、6 1、6 2、 合金,鉬,鉬合金之一所製得 61、62、63與65之厚度等於或 排列層之一不均勻磨擦配向所 寺線6 5之高度最低化而予以減 一薄膜電晶體(TFT)包含閘 通道層40,歐姆接觸層5ι與52 62 ° 由氮化矽製得之鈍化層7 0被 第一數據圖案60、61、62、63 7 1與7 3分別使第一數據線6 〇與 63與65可由選自鉻,鋁,鋁 較佳為第一數據圖案60、 小於大約5 0 0埃,因為由於 致之漏光損失,可藉使圖素 少。 極電極2 1,閘極絕緣層3 〇, ’及源極與没極電極6 1與 形成以覆蓋住薄獏電晶體與 與65。鈍化層70具有接觸孔 第一數據裰墊63暴露出,且
純化層7 0與閘 露出。 極絶緣30具有一接觸孔72以使閘極襯墊2 2暴 經過接觸孔7 1鱼 之第二數據圖宰8〇C至第-數據圖案60與63 一數櫨円安^ & 。3,破形成於鈍化層70之上且.沿著第 極=:=延伸I另外,經由接觸崎接至閘 2所示十數攄= 窥墊⑽被形成於鈍化層7。之上。如圖 ㈣之鄰接— 邊匕因之兩邊緣重疊於鄰接至兩個共同電 12實現與黑紋矩陣相=力;二數據線8◦與兩個共同電極 線6〇與80部份之漏光二:功…且斷接近第-與第二數據 絕緣層3。均被介入於二私:圖1所*,鈍化層7〇與閘極 上之兩個共同電極12 數%線2 3和重疊於第二數據線80 莖-赵二所以降低了其間之短路。 合金之單層姓模,赤由鉻、鋁、鋁合金、鉬或鉬 雙層結構材料所製得。為二f k ¥電材斜製仔之 好接觸特1生,襯墊83,帛 ϋ :圖案82與83可具有良 絡,…製得以::ΐ;;ίδΓν,1與83較佳係' 另外,蚱祛盔梦如# 反寸獲仔问賴性之接觸特性。 9 Μ “二數據圖案80與83之厚度传介於 … 1,5°。埃圍内厚’以使阻抗最低化。 二:IS體實例中,圖素區域係由間極線1。與第 ”弟一双據線60與80所圍繞之區域所定義
苐頁 1 =向之基材2〇0上’具有呈橫向之黑紋矩陣9〇。- 2 :Γ二::邊ί重疊於下基材1〇。之共同信_。: 3 ’依你本具體貫例在LCD中之圖素區域之橫向長度增 521171 五、發明說明(7) 加而縱向黑色基材則無,因而開口率得以改善。 於依據本發明第一具體實例中,由於跨越閘極線2〇所產 生之南度差所致之第一數據線60之斷線,藉加入第二數據 線80成具有雙層結構而予以防止,且第二數據線8防止沿 著共同電極1 2之漏光損失。然而相反地,第_數據線6 〇可 製得較第二數據線80為寬,且供作光之阻斷膜。於$ 合,第二數據線80可由ITO製得。 ^ 另外’圖素導線與源極與汲極電極可沿著第二數 被形成以替代沿著第一數據線6〇。於此場合,較佳趣,80 數據圖案具有厚度相等於或小於5 〇 〇埃以防止由於^為第一 所致之漏光損失,且因為諸襯墊與諸圖素導線同巧度左 圖素導線可被由鉻,鉬或鉬合金製得以使彼 成, 性之接觸特性。 X伸鬲信賴 接著,根據第二具體實例之LCD基材之結構將 … 者。圖ε圖係根據本發明之第二具體實例之LCD 以描述 置圖示。圖7顯示在圖6中沿著線v丨丨-ν π 之材之配 例說明。 1之基材之剖面圖 碩似於第一具體實例之結構剖面部分(例如 閘極襯墊部分,數據襯墊部分,與上基材 部分: 如圖6和7所示,大部份結構係類似於第一具蝴奋^略= 然而’在閘極絕緣層3 〇上之第一數u二二Λ例。 係敉在鈍化層7〇上之第二數據圖案δ〇與83為l 63之見 化層70中之接觸孔71被連接 士 ^ . 鉍由於 6〇包含遮蔽第-數據線80之裳Γ 之苐—數據 〜蚊弟一双據線8U之第一部份66與防止 &近·共同
521171 五、發明說明(8^ ' ' 〜 極12之漏光損失之第二部份64。如圖7所示,第— 60之第二部份64被分割成兩條光遮蔽長線64,兩條说線^ 4經由鈍化層70重疊於第二數據線80之兩側邊緣,且二 接於兩個共同電極丨2之邊緣經甴閘極絕緣層3 〇鄰接,,至第= 及第二數據線60及80。 於此第二具體實例LCD之結構中,數據線6〇之光遮蔽 St,疋位於介於第二數據線80與兩個共同電極12之間' 丑'囚此完全阻斷任何料土 可右 f斷任仃斜先到達基材100,且LCD之串音現灸 j有效地達最小化。 兄豕 本發'明之望二且择奋心 同㊉ 戶、例藉使介於數據線和與其鄰接之私 細節。 此漏先彳貝失。下述弟三具體實例之 圖8舉例說明根據本發一 一 配置圖示。圖9顧示在_ Q 弟二/、肢貫例之LCD之基材之 例說明。... 圖8中沿著線ΙΧ—ιχ之基材之剖面圖 門ί = ^苐—具禮貫例之結構剖面部分(例如TFT部分 閘極覩墊部分,數據襯墊 命p甘, 如圖8和Θ所示’大部产。刀,、基材)將予以省略。 分而 σ 77〜構係類似於第二具體實例。
然叩,在閘極絕緣層3 〇卜夕穿一奴4占. ^ Λ 1 J 接觸孔71被連接至於吨庶弟,奴圖案60,其係經甴 於第二數據線80跨越間極;;°〇3 數據線8。,僅形成 兩=電極12鄰接於第:數據線6: J㈡ 60之兩側邊緣。比較於苐一鱼二且於弟破佩線 1 2之寬度可被加寬,咬 ”弟一,、奴實例,共同電極 A ;丨於兩個共同電極12間之距離可被
苐14頁 521171 五、發明說明(9) 減少。 因為於第三具體實例中在共同電極12上無第一數據圖 案,介於數據線與共同電極1 2間之短路可能性顯著降低。 根據本發明之第三具體實例,有可能藉形成數據、案作 為雙層結構使數據圖案免於發生任何斷線,且仍然維持高 度之接觸信賴性。利兩數據圖案與鄰接於數據線之共同電 極防止漏光損失。因此LCD之開口率增加。另外,介於數 據圖案與鄰接於數據線之共同電極間之任何短路可能性藉 增強其相互間之絕緣而予以減少。
於諸圖示與說明書中,此處已揭示了本發明之典型較佳 具體實例,且/雖然沿用了特定之條件,彼等僅適用於一般 性與記述認知且非為限制之目的,本發明之樣態列於以下 之申請專利範圍中。
苐15頁
Claims (1)
- 521171I 六U讀辜利·範圍-·—^ 1. 一種液晶顯示器包含: 閘極線, 與閘極線相交錯之第一與第二數據線且其閘極線相絕 緣; ,- 介入於第一與第二數據線間且具有第一接觸孔穿經逼 第一與第二數據線使其彼此連接之第一絕緣層,第一與第 二數據線彼此重疊;多個共同電極於閘極邊線與第一和第二數據線所定義 出之圖素區域内彼此平行,共同電極鄰接於第一與第二數 據線且重疊於第一或第二數據線; 於圖素區域内多個圖素電極與共同電極相對向;及 具有分別連接至閘極線,第一或第二數據線與圖素電 極之閘極電極,源極電極與汲極電極之薄膜電晶體。 2. 如申請專利範圍第1項之液晶顯示器,另外包含: 連接至第一數據線末端之第一數據槪墊; 連接至第二數據線末端之第二數據襯墊; 其中第一數據襯墊與第二數據襯墊經由形成於第一絶 緣層内之第二接觸孔彼此相互連接。3. 如申請專利範圍第2項之液晶顯示器,其中第一數據 線係位於第二數據線之上,且第一數據線係由選自包括 絡,窃、紹合金及ITO中之一所製得。 4. 如申請專利範圍第1項之液晶顯示器,另外包含: 連接至閘極線末端之閘極襯墊;及 輔助閘極裰墊,其係由與第一或第二數據線相同之層苐16頁 521171 六、申請專利範圍 所製得且經由在第一絕緣層内之第二接觸孔連接至閘極裰 墊。 5 ·如申請專利範圍第4項之液晶顯示器,其中輔助閘極 襯墊係由選自包括鉻,鉬、鉬合金及I TO中之一所製得。 6. 如申請專利範圍第1項之液晶顯示器,其中圖素電極 係由與第一或第二數據線相同之層所製得。 7. 如申請專利範圍第1項之液晶顯示器,其中圖素電極 具有相等於或小於500埃之厚度。8. 如申請專利範圍第1項之液晶顯示器,另外包含第二 絕緣層介入於共同電極與第一或第二數據線之間。 9. 如申請專利範圍第8項之液晶顯示器,其中部份第一 與第二絕緣層係位於共同電極與第一或第二數據線之間。 1 〇.如申請專利範圍第1項之液晶顯示器,其中共同電極 係由與閘極線相同之層所製得。 11.如申請專利範圍第1項之液晶顯示器,其中第一數據 線包含與閘極線交錯之第一部份及重疊於共同電極上之第 二部份。1 2.如申請專利範圍第1項之液晶顯示器,另外包含平行 於閘極線且連接至共同電極之共同信號線。 1 3.如申請專利範圍第1 2項之液晶顯示器,另外包含一 黑紋矩陣重疊於閘極線與共同信號線之上。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980017518A KR100483405B1 (ko) | 1998-05-15 | 1998-05-15 | 평면 구동 방식의 액정 표시 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW521171B true TW521171B (en) | 2003-02-21 |
Family
ID=28036005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087119940A TW521171B (en) | 1998-05-15 | 1998-12-02 | Liquid crystal display having electrodes for generating electric fields in a signal substrate |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100483405B1 (zh) |
TW (1) | TW521171B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI509317B (zh) * | 2009-12-18 | 2015-11-21 | Samsung Display Co Ltd | 液晶顯示裝置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100534377B1 (ko) * | 1998-10-24 | 2006-03-22 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR100656905B1 (ko) * | 2000-01-27 | 2006-12-15 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP4683688B2 (ja) * | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
KR100748442B1 (ko) * | 2001-02-26 | 2007-08-10 | 엘지.필립스 엘시디 주식회사 | 수평전계 구동방식 액정 표시 장치용 어레이 기판 및 그제조 방법 |
KR100835974B1 (ko) * | 2001-12-24 | 2008-06-09 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
KR100835971B1 (ko) * | 2001-12-24 | 2008-06-09 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
KR100835973B1 (ko) * | 2001-12-28 | 2008-06-09 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법 |
KR100816365B1 (ko) * | 2001-12-28 | 2008-03-24 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
KR100863727B1 (ko) * | 2002-03-20 | 2008-10-16 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법 |
JP2003287770A (ja) * | 2002-03-28 | 2003-10-10 | Nec Lcd Technologies Ltd | 液晶表示装置 |
KR100930916B1 (ko) * | 2003-03-20 | 2009-12-10 | 엘지디스플레이 주식회사 | 횡전계형 액정표시장치 및 그 제조방법 |
JP2004325953A (ja) | 2003-04-25 | 2004-11-18 | Nec Lcd Technologies Ltd | 液晶表示装置 |
KR102630710B1 (ko) | 2015-12-31 | 2024-01-26 | 엘지디스플레이 주식회사 | 엑스레이 검출기용 어레이기판, 이를 포함하는 엑스레이 검출기, 엑스레이 검출기용 어레이기판의 제조방법 및 엑스레이 검출기의 제조방법 |
-
1998
- 1998-05-15 KR KR1019980017518A patent/KR100483405B1/ko not_active IP Right Cessation
- 1998-12-02 TW TW087119940A patent/TW521171B/zh not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI509317B (zh) * | 2009-12-18 | 2015-11-21 | Samsung Display Co Ltd | 液晶顯示裝置 |
US9664968B2 (en) | 2009-12-18 | 2017-05-30 | Samsung Display Co., Ltd. | Liquid crystal display device |
US10488726B2 (en) | 2009-12-18 | 2019-11-26 | Samsung Display Co., Ltd. | Liquid crystal display device |
US11150529B2 (en) | 2009-12-18 | 2021-10-19 | Samsung Display Co., Ltd. | Liquid crystal display device |
US11803090B2 (en) | 2009-12-18 | 2023-10-31 | Samsung Display Co., Ltd. | Liquid crystal display device |
Also Published As
Publication number | Publication date |
---|---|
KR100483405B1 (ko) | 2005-07-07 |
KR19990085237A (ko) | 1999-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6466289B1 (en) | Liquid crystal displays having common electrode overlap with one or more data lines | |
TW521171B (en) | Liquid crystal display having electrodes for generating electric fields in a signal substrate | |
JP3742837B2 (ja) | フリンジフィールド駆動液晶表示装置及びその製造方法 | |
US8212951B2 (en) | Liquid crystal display | |
US8754415B2 (en) | High light transmittance in-plane switching liquid crystal display device and method for manufacturing the same | |
KR100951351B1 (ko) | 박막 트랜지스터 표시판 및 이를 포함하는 전기 영동 표시장치 | |
JP2004185011A (ja) | 液晶表示装置用薄膜トランジスタ表示板 | |
KR20100058976A (ko) | 액정 표시 장치 및 이의 제조 방법 | |
TW200536125A (en) | Display device | |
KR100870016B1 (ko) | 박막 트랜지스터 어레이 기판 및 이를 포함하는 액정 표시장치 | |
KR20090111123A (ko) | 고개구율 어레이 기판, 액정 표시 장치 및 이들의 제조방법 | |
JPS63208896A (ja) | 薄膜トランジスタアレイ | |
TW201007264A (en) | Fringe field switch LCD | |
KR102140644B1 (ko) | 박막 트랜지스터 표시판 및 이의 제조방법 | |
KR101046923B1 (ko) | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 | |
JP5090133B2 (ja) | 液晶表示装置 | |
JP4102925B2 (ja) | アクティブマトリックス型液晶表示装置 | |
KR20020085197A (ko) | 액정표시장치 및 그 제조방법 | |
JP2004020687A (ja) | 表示装置 | |
TW201211662A (en) | Active device, pixel structure, driving circuit and display panel | |
CN104777640B (zh) | 液晶显示器及其制造方法 | |
JPH0527249A (ja) | アクテイブマトリクス基板 | |
KR100318536B1 (ko) | 액정 표시 장치용 박막 트랜지스터 기판 | |
KR100311213B1 (ko) | 고개구율 및 고투과율 액정 표시 장치 및 그 제조방법 | |
JPS63276031A (ja) | 液晶表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |